Substrate processing system and edge ring mounting method

Abstract

This invention provides a substrate processing system, comprising a plasma processing apparatus, a depressurized conveying device connected to the plasma processing apparatus, and a control device. The plasma processing apparatus includes: a processing container capable of being depressurized; a substrate support stage disposed within the processing container, comprising a substrate mounting surface, a ring mounting surface capable of mounting an edge ring such that the edge ring surrounds the substrate, and an electrostatic chuck for electrostatically adsorbing the edge ring onto the ring mounting surface; the substrate support stage is connected to a power source supplying a pulsed DC voltage for bias; a lifting mechanism for raising and lowering the edge ring; and a plasma generation unit for generating plasma within the processing container. The depressurized conveying device includes a conveying robot for conveying the edge ring, and a control device. The device can control: a placement step in which an edge ring, transported by a conveyor robot into a processing container and handed over to the lifting mechanism, is lowered and placed on a ring placement surface; a step in which the placed edge ring is electrostatically adsorbed onto the ring placement surface; and a stabilization step in which plasma is generated in the processing container before plasma treatment of the product substrate, thereby stabilizing the electrostatic adsorption of the edge ring on an electrostatic chuck. The stabilization step includes an application step in which a pulsed DC voltage for biasing is applied to the substrate support stage. The application step includes: a first step in which a first bias voltage is applied; and a second step in which a second bias voltage higher than the first bias voltage is applied after the first step.

Description

Technical Field

[0001] This invention relates to a substrate processing system and a method for mounting an edge ring. Background Technology

[0002] Patent Document 1 discloses a focusing ring replacement method for a plasma processing apparatus capable of plasma processing a substrate placed on a mounting stage inside a processing chamber. The method replaces a focusing ring that is placed on the mounting stage surrounding the substrate. The replacement method includes a delivery step of removing the focusing ring from the processing chamber using a delivery device without opening the processing chamber to the atmosphere; and a cleaning step of cleaning the surface of the mounting stage where the focusing ring is placed after the delivery step. The replacement method further includes an delivery step of inserting the focusing ring into the processing chamber and placing it on the mounting stage using a delivery device after the cleaning step, without opening the processing chamber to the atmosphere. Furthermore, Patent Document 1 discloses a method for removing static electricity before the delivery step when the focusing ring is attached to the mounting stage using an electrostatic chuck.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-10992 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The technique of the present invention uses a conveying device to replace the edge ring and properly electrostatically attach it to the substrate support.

[0008] Means for solving technical problems

[0009] One aspect of the present invention is a substrate processing system comprising a plasma processing apparatus, a depressurized conveying apparatus connected to the plasma processing apparatus, and a control device. The plasma processing apparatus includes: a processing container capable of being depressurized; a substrate support stage disposed within the processing container, comprising a substrate mounting surface, a ring mounting surface capable of mounting an edge ring such that an edge ring surrounds the substrate, and an electrostatic chuck for electrostatically adsorbing the edge ring onto the ring mounting surface; the substrate support stage is connected to a power supply for supplying a pulsed DC voltage for bias; a lifting mechanism for raising and lowering the edge ring; and a plasma generation unit for generating plasma within the processing container. The depressurized conveying apparatus includes a conveying robot for conveying the edge ring. The control device can control: a placement step in which the edge ring, transported by the conveying robot to the processing container and handed over to the lifting mechanism, is lowered and placed on the ring placement surface; a step in which the placed edge ring is electrostatically adsorbed on the ring placement surface; and a stabilization step in which plasma is generated in the processing container before plasma treatment of the product substrate, thereby stabilizing the electrostatic adsorption of the edge ring on the electrostatic chuck, the stabilization step including an application step of applying a pulsed DC voltage for bias to the substrate support, the application step including: a first step of applying a first bias voltage; and a second step of applying a second bias voltage higher than the first bias voltage after the first step.

[0010] Invention Effects

[0011] Using this invention, the edge ring that can be replaced using a conveying device can be appropriately electrostatically adsorbed onto the substrate support. Attached Figure Description

[0012] Figure 1 This is a plan view showing the outline of the structure of the plasma processing system, which is the substrate processing system of this embodiment.

[0013] Figure 2 It is a longitudinal cross-sectional view showing the general structure of the processing module.

[0014] Figure 3 yes Figure 2 A magnified view of a portion of the image.

[0015] Figure 4 It is the circumferential direction of the wafer support stage. Figure 3 Enlarged cross-sectional views of different parts.

[0016] Figure 5 This is a flowchart of Example 1 showing the installation sequence of the edge rings.

[0017] Figure 6This is a flowchart of Example 2 showing the installation sequence of the edge rings.

[0018] Figure 7 This is a flowchart of Example 3 showing the installation sequence of the edge rings.

[0019] Figure 8 This is a flowchart of Example 4 showing the installation sequence of the edge rings.

[0020] Figure 9 This is a diagram showing the state around the wafer support when moisture is removed from the edge ring.

[0021] Figure 10 This is a partially enlarged view used to illustrate an example of a wafer support stage configured to support a cover ring in addition to an edge ring. Detailed Implementation

[0022] In the manufacturing processes of semiconductor devices, plasma treatment is the process of etching substrates such as semiconductor wafers (hereinafter referred to as "wafers") using plasma. Plasma treatment is performed on a substrate support stage placed inside a depressurized processing container.

[0023] In addition, in order to obtain good and uniform plasma treatment results in the central and peripheral parts of the substrate, sometimes a ring-shaped component (hereinafter referred to as "edge ring") that appears as a top view is placed on the substrate support, which is called a focusing ring, edge ring, etc., in a manner that surrounds the substrate on the substrate support.

[0024] Furthermore, the result of plasma treatment depends on the temperature of the substrate. Therefore, during plasma treatment, the temperature of the substrate support stage is adjusted, and the temperature of the substrate is regulated via the substrate support stage.

[0025] When using the aforementioned edge ring, its temperature affects the plasma processing results at the periphery of the substrate; therefore, temperature regulation of the edge ring is also important. Consequently, the temperature of the edge ring is regulated via the substrate support stage.

[0026] However, when the substrate and edge ring are simply placed on the substrate support, a vacuum insulation layer is formed between the substrate support and the substrate and edge ring, making proper temperature regulation via the substrate support impossible. To improve this, an electrostatic chuck is provided on the substrate support to electrostatically attract the substrate and edge ring onto the electrostatic chuck.

[0027] In addition, the edge ring is etched and worn away due to exposure to plasma, and therefore needs to be replaced. Replacement when the edge ring is worn away is usually performed by the operator with the processing container open to the atmosphere, but it is also considered to use a conveyor device for transporting the edge ring, so that the processing container is not open to the atmosphere for replacement (see Patent Document 1).

[0028] In addition, when using the edge ring, if it is only electrostatically adsorbed on the electrostatic chuck, there is insufficient electrostatic adsorption force, and the temperature of the electrostatic chuck cannot be properly regulated via the substrate support stage (specifically via the electrostatic chuck).

[0029] Therefore, the technique of the present invention uses a conveying device to replace the edge ring and appropriately electrostatically attach it to the substrate support.

[0030] The substrate processing system and edge ring mounting method of this embodiment will now be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, elements having substantially the same functional configuration are omitted from repeated description by using the same reference numerals.

[0031] <Plasma Processing System>

[0032] Figure 1 This is a plan view showing the outline of the structure of the plasma processing system, which is the substrate processing system of this embodiment.

[0033] exist Figure 1 In the plasma processing system 1, a wafer W serving as a substrate can be processed. Specifically, the wafer W can be processed by substrate processing such as etching using plasma, i.e., plasma processing.

[0034] The plasma processing system 1 includes an atmospheric section 10 and a depressurization section 11, which are integrally connected via load locking modules 20 and 21. The atmospheric section 10 has an atmospheric module capable of performing the required processing on the wafer W under atmospheric pressure. The depressurization section 11 has a depressurization module capable of performing the required processing on the wafer W under a depressurized atmosphere (vacuum atmosphere).

[0035] Load locking modules 20 and 21 are configured to connect the loading module 30 included in the atmospheric section 10 and the transmission module 50 included in the depressurization section 11 via an on / off valve (not shown). Load locking modules 20 and 21 are configured to temporarily hold the wafer W. In addition, load locking modules 20 and 21 are configured to switch the internal atmosphere to atmospheric pressure and depressurized atmosphere.

[0036] The atmospheric section 10 includes a loading module 30 comprising a transport mechanism 40 described later, and a loading port 32 capable of holding a front-opening wafer transfer box 31. The front-opening wafer transfer box 31 can hold multiple wafers W. Furthermore, an orientation module (not shown) for adjusting the horizontal orientation of the wafers W, a buffer module (not shown) for temporarily storing multiple wafers W, etc., can be connected to the loading module 30.

[0037] The loading module 30 has a rectangular housing, the interior of which is maintained at atmospheric pressure. On one side of the long side of the housing constituting the loading module 30, a plurality of loading ports 32 are arranged side-by-side, for example, five. On the other side of the long side of the housing constituting the loading module 30, load locking modules 20 and 21 are arranged side-by-side.

[0038] Inside the housing of the loading module 30, a transport mechanism 40 is provided for holding and transporting the wafer W. The transport mechanism 40 includes: a transport arm 41 for supporting the wafer W during transport; a rotary table 42 for rotatably supporting the transport arm 41; and a base 43 for mounting the rotary table 42. Additionally, inside the loading module 30, a guide rail 44 extending along the length of the loading module 30 is provided. The base 43 is mounted on the guide rail 44, and the transport mechanism 40 is configured to move along the guide rail 44.

[0039] The depressurization unit 11 includes: a transfer module 50 serving as a depressurization transport device; a processing module 60 serving as a plasma processing device; and a storage module 61 serving as a storage unit. The interiors of the transfer module 50 and the processing module 60 (specifically, the interiors of the depressurization transport chamber 51 and the chamber 100 described later) are maintained in a depressurized atmosphere, and the interior of the storage module 61 is also maintained in a depressurized atmosphere. For example, a plurality of processing modules 60, for every one transfer module 50, are provided, for example, six; and a plurality of storage modules 61, for example, two, are also provided. Furthermore, the number and arrangement of the processing modules 60 are not limited to this embodiment and can be arbitrarily set, as long as at least one processing module including the wafer support stage described later is provided. Similarly, the number and arrangement of the storage modules 61 are not limited to this embodiment and can be arbitrarily set, for example, at least one.

[0040] The transmission module 50 is configured to transport the wafer W internally. Additionally, the transmission module 50 is configured to transport the edge ring E (described later) internally.

[0041] The transmission module 50 includes a pressure-reducing delivery chamber 51 with a housing that is polygonal in shape when viewed from above (quadrilateral in shape in the illustrated example), and the pressure-reducing delivery chamber 51 is connected to the load locking modules 20, 21.

[0042] The transfer module 50 is capable of conveying the wafer W sent to the load locking module 20 to a processing module 60, and sending the wafer W that has undergone the required plasma treatment in the processing module 60 to the load locking module 21.

[0043] In addition, sometimes the transmission module 50 can transport the edge ring E in the storage module 61 to a processing module 60, and send the edge ring E in the processing module 60 to the storage module 61.

[0044] The processing module 60 is capable of performing plasma processing, such as etching, on the wafer W delivered from the transfer module 50. Furthermore, the processing module 60 is connected to the transfer module 50 via an on / off valve 62. The specific structure of this processing module 60 will be described later.

[0045] The storage module 61 is capable of storing the edge ring E under a reduced pressure atmosphere. By storing the edge ring E under such a reduced pressure atmosphere, moisture adhering to the edge ring E can be removed during storage. To facilitate the removal of moisture from the edge ring E within the storage module 61, a heater (not shown) can be provided in the storage module 61.

[0046] In addition, the storage module 61 is connected to the transmission module 50 via the on / off valve 63.

[0047] A transport robot 70 is installed inside the depressurized transport chamber 51 of the transport module 50. The transport robot 70 is capable of holding and transporting the wafer W. In addition, the transport robot 70 is capable of holding and transporting the edge ring E.

[0048] The conveying robot 70 has a conveying arm 71 that can rotate, extend, and lift while holding a wafer W. The front end of the conveying arm 71 branches into two holding forks 72, 72. The forks 72, 72 can hold the conveyed wafer W and the edge ring E respectively.

[0049] In the transmission module 50, the conveying arm 71 is capable of receiving the wafer W held in the load locking module 20 and sending it to the processing module 60. Additionally, the conveying arm 71 is capable of receiving the wafer W that has undergone the required processing within the processing module 60 and sending it out to the load locking module 21.

[0050] Furthermore, in the transmission module 50, sometimes the conveying arm 71 can receive the edge ring E within the receiving module 61 and send it into the processing module 60. Additionally, in the transmission module 50, sometimes the conveying arm 71 can receive the edge ring E within the processing module 60 and send it out to the receiving module 61.

[0051] The plasma processing system 1 also includes a control device 80. In one embodiment, the control device 80 is capable of processing computer-executable commands to cause the plasma processing system 1 to perform the various steps described herein. The control device 80 is capable of controlling other elements of the plasma processing system 1 to cause the plasma processing system 1 to perform the various steps described herein. In one embodiment, the control device 80 may be part or all of the other elements of the plasma processing system 1. The control device 80 may, for example, include a computer 90. The computer 90 may, for example, include a processing unit (CPU) 91, a storage unit 92, and a communication interface 93. The processing unit 91 is capable of performing various control actions and calculations based on a program stored in the storage unit 92. The storage unit 92 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 93 can communicate with other elements of the plasma processing system 1 via communication lines such as LAN (Local Area Network).

[0052] <Wafer Processing in Plasma Processing System 1>

[0053] Next, an example of wafer processing using the plasma processing system 1 configured as described above will be explained.

[0054] First, the conveying mechanism 40 removes the wafer W from the required front-opening wafer transfer box 31 and sends it into the load locking module 20. Next, the load locking module 20 is sealed and depressurized. Then, the interior of the load locking module 20 is connected to the interior of the transmission module 50.

[0055] Next, the wafer W is held by the transport robot 70 and transported from the load locking module 20 to the transmission module 50.

[0056] Next, the on / off valve 62 corresponding to the required processing module 60 is opened, and the conveying robot 70 delivers the wafer W into the required processing module 60. Afterwards, the on / off valve 62 is closed, and the wafer W undergoes the required processing in the processing module 60. Furthermore, the processing of the wafer W in this processing module 60 will be described later.

[0057] Next, the on / off valve 62 is opened, and the conveying robot 70 delivers the wafer W from the processing module 60. Afterward, the on / off valve 62 is closed.

[0058] Next, the conveying robot 70 delivers the wafer W into the load locking module 21. When the wafer W is delivered into the load locking module 21, the module is sealed, leaving it open to the atmosphere. Afterwards, the interior of the load locking module 21 is connected to the interior of the loading module 30.

[0059] Next, the wafer W is held by the transport mechanism 40 and returned from the load locking module 21 via the loading module 30 and stored in the desired front-opening wafer transfer box 31. Thus, the wafer processing using the plasma processing system 1 is completed.

[0060] <Processing Module 60>

[0061] Next, use Figures 2-4 The processing module 60 is described below. Figure 2 This is a longitudinal cross-sectional view showing the general structure of the processing module 60. Figure 3 yes Figure 2 A magnified view of a portion of the image. Figure 4 It is the circumferential direction of the wafer support stage 101 described later. Figure 3 Enlarged cross-sectional views of different parts.

[0062] like Figure 2 As shown, the processing module 60 includes a chamber 100 serving as a processing container, a gas supply unit 160, an RF (Radio Frequency) power supply unit 170, and an exhaust system 180. Additionally, the processing module 60 also includes a voltage application unit 130 (see reference 180). Figure 3 ), bias section 140 (refer to) Figure 3 ) and gas supply unit 150 (refer to Figure 4 The processing module 60 also includes a wafer support stage 101 as a substrate support stage and an upper electrode 102.

[0063] The interior of chamber 100 can be depressurized, and chamber 100 defines a processing space 100s in which plasma can be generated. Additionally, a wafer support stage 101, etc., is disposed inside chamber 100. The material of chamber 100 can be, for example, aluminum. Furthermore, chamber 100 is connected to ground potential.

[0064] The wafer support stage 101 is disposed, for example, in the lower region of the chamber 100. The upper electrode 102 is disposed above the wafer support stage 101 and can function as part of the ceiling of the chamber 100.

[0065] The wafer support stage 101 is capable of supporting the wafer W. In one embodiment, the wafer support stage 101 includes a lower electrode 103, an electrostatic chuck 104, a support body 105, an insulator 106, a lifter 107, and a lifter 108. The wafer support stage 101 is also capable of supporting an edge ring E. As a component of the wafer support stage 101, the edge ring E may or may not be included.

[0066] The lower electrode 103 is formed of a conductive material, such as aluminum. In one embodiment, a flow path 109 for temperature-regulating fluid is formed inside the lower electrode 103. Temperature-regulating fluid can be supplied to the flow path 109 from a cooling unit (not shown) located outside the chamber 100. The temperature-regulating fluid supplied to the flow path 109 can return to the cooling unit. By circulating, for example, low-temperature brine as the temperature-regulating fluid in the flow path 109, a wafer support 101 (specifically, an electrostatic chuck 104), the wafer W, or the edge ring E can be cooled to a predetermined temperature. By circulating, for example, high-temperature brine as the temperature-regulating fluid in the flow path 109, a wafer support 101 (specifically, an electrostatic chuck 104), the wafer W, or the edge ring E can be heated to a predetermined temperature. The flow path 109 can function as at least part of a cooling section for cooling the edge ring E.

[0067] Furthermore, when a temperature regulating mechanism is provided in the wafer support stage 101, the form of the temperature regulating mechanism is not limited to the flow path 109 described above; for example, it could be a resistance heater or other forms. Additionally, the component in the wafer support stage 101 that houses the temperature regulating mechanism is not limited to the lower electrode 103; it could be other components.

[0068] The electrostatic chuck 104 is a component capable of electrostatically adsorbing the edge ring E, and is disposed on the lower electrode 103. Alternatively, the electrostatic chuck 104 may also be capable of electrostatically adsorbing the wafer W. In one embodiment, the central portion of the electrostatic chuck 104 constitutes a substrate mounting portion. In another embodiment, the upper surface of the central portion of the electrostatic chuck 104 is formed to be higher than the upper surface of the peripheral portion. In one embodiment, the wafer W can be mounted on the upper surface 104a of the central portion of the electrostatic chuck 104, and the edge ring E is mounted on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. That is, in one embodiment, the upper surface 104a of the central portion of the electrostatic chuck 104 serves as a wafer mounting surface capable of mounting the wafer W, and the upper surface 104b of the peripheral portion of the electrostatic chuck 104 serves as a ring mounting surface capable of mounting the edge ring E in a manner surrounding the substrate mounting surface.

[0069] The edge ring E is a component configured to surround the wafer W; specifically, it is configured to surround the wafer W placed on the electrostatic chuck 104. In one embodiment, the edge ring E is configured to surround a central portion of the electrostatic chuck 104 whose upper surface is higher than the periphery. The edge ring E is formed into a ring shape when viewed from above. The material of the edge ring E can be Si, SiO2, etc.

[0070] In the center of the electrostatic chuck 104, an electrode 110 may be provided for electrostatically adsorbing the wafer W onto the upper surface 104a of the center. Additionally, in the periphery of the electrostatic chuck 104, an electrode 111 is provided for electrostatically adsorbing the edge ring E onto the upper surface 104b of the periphery. The electrode 111 may be, for example, a bipolar type comprising a pair of electrodes 111a and 111b formed at different locations. Electrode 111a is located on the inner side of the center of the electrostatic chuck 104, and electrode 111b is located on the outer side.

[0071] An electrode 112 may be provided at the center of the electrostatic chuck 104. This electrode 112 can be biased to introduce ions or the like from plasma generated within the chamber 100 to the wafer W. Additionally, an electrode 113 is provided at the periphery of the electrostatic chuck 104. This electrode 113 can be biased to introduce ions or the like from plasma generated within the chamber 100 to the edge ring E. In one embodiment, electrode 110 is located above electrode 112, and electrode 111 is located above electrode 113.

[0072] The electrostatic chuck 104 has a structure in which electrodes 110, 111, 112, and 113 are sandwiched between insulating members made of, for example, insulating material.

[0073] like Figure 3 As shown, the voltage application section 130 is connected to the electrode 111, and the voltage application section 130 is capable of generating an electrical force (specifically, for example, a Coulomb force) for electrostatic adsorption of the edge ring E. In the case of a bipolar electrode 111, it is configured to selectively apply either voltages of different polarities or voltages of the same polarity from the voltage application section 130 to a pair of electrodes 111a and 111b.

[0074] The voltage application unit 130 includes, for example, two DC power supplies 131a and 131b and two switches 132a and 132b.

[0075] The DC power supply 131a is connected to the electrode 111a via the switch 132a, and can selectively apply a positive or negative voltage to the electrode 111a for electrostatic adsorption of the edge ring E.

[0076] The DC power supply 131b is connected to the electrode 111b via the switch 132b, and can selectively apply a positive or negative voltage to the electrode 111b for electrostatic adsorption of the edge ring E.

[0077] The voltage application unit 130 may include a DC power supply 131c and a switch 132c.

[0078] The DC power supply 131c is connected to the electrode 110 via the switch 132c, and can apply a voltage to the electrode 110 for electrostatic adsorption of the wafer W.

[0079] In addition, the biasing part 140 is connected to the electrode 113.

[0080] The biasing section 140 includes, for example, a bias power supply 141a, a matching circuit 142a, and a filter 143a.

[0081] The bias power supply 141a is connected to the electrode 113 via a matching circuit 142a and a filter 143a, and can apply a pulsed DC voltage for biasing to the electrode 113 to introduce ions or the like from the plasma generated within the chamber 100 to the edge ring E. Specifically, the bias power supply 141a can apply a pulsed DC voltage of negative polarity. Furthermore, the bias power supply 141a can switch between continuous and intermittent (specifically, intermittent and periodic) application of the pulsed DC voltage. Moreover, the pulse of the DC voltage applied by the bias power supply 141a can be a rectangular wave pulse or a triangular wave pulse. Furthermore, the bias power supply 141a can adjust the duty cycle in the case of intermittent application. Here, the duty cycle refers to the proportion of the period during which the pulsed DC voltage for biasing is applied within one cycle.

[0082] The bias section 140 may also include a bias power supply 141b, a matching circuit 142b, and a filter 143b.

[0083] The bias power supply 141b is connected to the electrode 112 via the matching circuit 142b and the filter 143b, and can apply a pulsed DC voltage for biasing the electrode 112 to introduce ions or the like from the plasma generated in the chamber 100 to the wafer W. The bias power supply 141b is not limited to applying a pulsed DC voltage for biasing the electrode 112; for example, it can also supply RF power for biasing the electrode 112. Furthermore, the bias power supply, matching circuit, and filter can be shared between electrodes 112 and 113.

[0084] Furthermore, in this embodiment, the central portion of the electrostatic chuck 104 on which electrodes 110 are provided and the peripheral portion on which electrodes 111 are provided are integrated, but these central portions and peripheral portions may also be separate.

[0085] In addition, in this embodiment, the electrode 111 used to adsorb and retain the edge ring E is bipolar, but it can also be unipolar.

[0086] Furthermore, in this embodiment, the bias for the wafer and the bias for the edge ring E are supplied to electrodes 112 and 113, i.e., to the electrostatic chuck 104, but they may also be supplied to the lower electrode 103. In this case, the bias for the wafer is the same as the bias for the edge ring E, and electrodes 112 and 113 may be omitted.

[0087] In addition, the central portion of the electrostatic chuck 104 may be formed to have a diameter smaller than that of the wafer W. When the wafer W is placed on the upper surface 104a of the central portion of the electrostatic chuck 104, the peripheral portion of the wafer W extends out from the central portion of the electrostatic chuck 104.

[0088] Furthermore, the edge ring E has a step formed on its upper part, and the upper surface of the outer periphery is formed to be higher than the upper surface of the inner periphery. The inner periphery of the edge ring E is formed by drilling into the lower side of the periphery of the wafer W extending from the center of the electrostatic chuck 104. That is, the inner diameter of the edge ring E is formed to be smaller than the outer diameter of the wafer W.

[0089] The support 105 is a component formed from an insulating material such as quartz and is arranged to surround the lower electrode 103 and the electrostatic chuck 104.

[0090] To release heat transfer gas into the gap between the back side of the mounted wafer W and the wafer W, a gas release hole (not shown) can be formed on the upper surface 104a of the central portion of the electrostatic chuck 104. Heat transfer gas from a gas supply unit (not shown) can be supplied through this gas release hole. The gas supply unit may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply unit, for example, can supply heat transfer gas from the gas source to the aforementioned gas supply hole via the pressure controller.

[0091] And, as Figure 4As shown, a gas release hole 104c is formed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. Specifically, one end of the gas release hole 104c opens into the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The gas release hole 104c can supply a heat transfer gas such as helium into the gap between the back side of the edge ring E placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 104b. In addition, the end of the gas release hole 104c on the side opposite to the upper surface 104b of the peripheral portion is connected to a gas supply unit 150 via a pipe 153. The gas supply unit 150 may include one or more gas sources 151 and one or more flow controllers 152. In one embodiment, the gas supply unit 150 can, for example, supply heat transfer gas from the gas source 151 to the gas release hole 104c via the flow controllers 152. Each flow controller 152 may, for example, include a mass flow controller or a pressure-controlled flow controller. The gas release port 104c and the piping 153 can function as at least part of a supply path for supplying gas between the upper surface 104b of the periphery of the electrostatic chuck 104, which serves as the ring mounting surface, and the back side of the edge ring E.

[0092] Furthermore, the end of the gas release hole 104c opposite to the upper surface 104b of the peripheral portion is connected to the exhaust system 180 via a pipe 181. This allows for venting around the upper surface 104b of the peripheral portion of the electrostatic chuck 104 via the gas release hole 104c. In other words, the gas release hole 104c functions as an exhaust port for venting around the annular mounting surface including the upper surface 104b of the peripheral portion of the electrostatic chuck 104. Therefore, in one embodiment, the gas release hole 104c and the pipe 181 function as at least part of an exhaust path for venting between the upper surface 104b of the peripheral portion of the electrostatic chuck 104 (which serves as the annular mounting surface) and the back surface of the edge ring E.

[0093] Additionally, a switching valve 155 can be provided in piping 153 to switch the operation / stop of the supply of heat transfer gas by the gas supply unit 150. Similarly, a switching valve 182 can be provided in piping 181 to switch the operation / stop of the exhaust gas around the upper surface 104b of the aforementioned peripheral portion supplied by the exhaust system 180.

[0094] Figure 2 The insulator 106 is a cylindrical component made of ceramic or the like, which can support the support 105. For example, the insulator 106 is formed to have an outer diameter that is the same as the outer diameter of the support 105, and can support the periphery of the support 105.

[0095] The lifter 107 is a component capable of rising and falling relative to the upper surface 104a of the central portion of the electrostatic chuck 104, and is formed in a column shape, for example, using ceramic material. When rising, the upper end of the lifter 107 protrudes from the aforementioned upper surface 104a and can support the wafer W. The lifter 107 can be used to transfer the wafer W between the wafer support stage 101 and the transport arm 71 of the transport robot 70.

[0096] In addition, three or more lifting devices 107 are provided at intervals between each other, and are arranged in a manner that extends in the vertical direction.

[0097] The lifter 107 can be raised and lowered by the actuator 114. The actuator 114 has, for example, a support member 115 for supporting a plurality of lifters 107; and a drive unit 116 for generating a driving force to raise and lower the support member 115, thereby raising and lowering the plurality of lifters 107. The drive unit 116 has, for example, an electric motor (not shown) as the drive source for generating the driving force.

[0098] The lifter 107 can be inserted into the through hole 117, which is opened on the upper surface 104a of the center of the electrostatic chuck 104. The through hole 117 is formed, for example, to extend downward from the upper surface 104a of the center of the electrostatic chuck 104 and reach the bottom surface of the lower electrode 103.

[0099] The lifter 108 is a lifting component capable of rising and falling relative to the upper surface 104b of the periphery of the electrostatic chuck 104, and is formed in a column shape, for example, using ceramic material. In one embodiment, when the lifter 108 rises, its upper end can protrude from the upper surface 105a of the support 105.

[0100] In addition, three or more lifting devices 108 are provided at intervals along the circumference of the electrostatic chuck 104, extending in a vertical direction.

[0101] The lift 108 can be raised and lowered by the actuator 118. The actuator 118, for example, is provided for each lift 108 and has a support member 119 for supporting the lift 108 in a manner capable of horizontal movement. The support member 119, for example, has a thrust bearing for supporting the lift 108 in a manner capable of horizontal movement. In addition, the actuator 118 has a drive unit 120 for generating a driving force to raise and lower the support member 119, thereby raising and lowering the lift 108. The drive unit 120, for example, has an electric motor (not shown) as the drive source for generating the aforementioned driving force.

[0102] In one embodiment, the lifter 108 is capable of being inserted into a through hole 121 that opens at its upper end on the upper surface 105a of the support 105. The through hole 121 is formed, for example, through the support 105 in the vertical direction.

[0103] The lifting device 108 described above can be used to connect the edge ring E between the wafer support stage 101 and the transport arm 71 of the transport robot 70.

[0104] In addition, the lifter 108 and the actuator 118 constitute a lifting mechanism for raising and lowering the edge ring E relative to the upper surface 104b of the periphery of the electrostatic chuck 104, which serves as the ring mounting surface.

[0105] The upper electrode 102 can also function as a gas supply unit, i.e., a spray head, for supplying one or more gases from the gas supply unit 160 into the chamber 100. In one embodiment, the upper electrode 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas outlets 102c. The gas inlet 102a is in fluid communication with, for example, the gas supply unit 160 and the gas diffusion chamber 102b. The plurality of gas outlets 102c are in fluid communication with the gas diffusion chamber 102b and the interior of the chamber 100. In one embodiment, the upper electrode 102 can supply one or more gases, such as process gases, from the gas inlet 102a through the gas diffusion chamber 102b and the plurality of gas outlets 102c into the chamber 100. The upper electrode 102 can function as at least part of a cooling unit for cooling the edge ring E.

[0106] The gas supply unit 160 may include one or more gas sources 161 and one or more flow controllers 162. In one embodiment, the gas supply unit 160 may, for example, supply one or more gases from their respective gas sources 161 via their respective flow controllers 162 to the gas inlet 102a. Each flow controller 162 may, for example, include a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 160 may include one or more flow modulation devices for modulating or pulsed the flow rate of one or more gases.

[0107] The RF power supply unit 170 is capable of supplying RF power, such as one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode 102, or both the lower electrode 103 and the upper electrode 102. This allows plasma to be generated from one or more processing gases supplied to the chamber 100, i.e., the processing space 100s. Therefore, the RF power supply unit 170 can function as at least part of a plasma generation unit for generating plasma within the chamber 100. Specifically, the plasma generation unit can generate plasma from one or more gases within the chamber 100. The RF power supply unit 170 includes, for example, an RF generation unit 171a and a matching circuit 172a. In one embodiment, the RF power supply unit 170 can supply an RF signal from the RF generation unit 171a to the lower electrode 103 via the matching circuit 172a. For example, the RF signal may have a frequency in the range of 27MHz to 100MHz.

[0108] Furthermore, although the illustrations are omitted, other embodiments can be considered in this invention. For example, in an alternative embodiment, the RF power supply unit 170 may supply an RF signal from the RF generation unit 171a to the upper electrode 102. Additionally, in other alternative embodiments, a DC voltage may be applied to the upper electrode 102.

[0109] Furthermore, in various implementations, the amplitude of one or more RF signals can be pulsed or modulated. Amplitude modulation can include pulsed RF signal amplitude between an on and off state, or between two or more different on states.

[0110] The exhaust system 180 can be connected, for example, to an exhaust port 100e located at the bottom of the chamber 100. The exhaust system 180 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0111] <Chip processing in processing module 60>

[0112] Next, an example of wafer processing using the processing module 60 will be described. Furthermore, the processing module 60 can perform plasma processing, such as etching, on the product wafer W, which serves as the product substrate.

[0113] First, the product wafer W, held by the transport arm 71 of the transport robot 70, is fed into the interior of the chamber 100. Through the lifting of the elevator 107 and the extraction of the transport arm 71 from the chamber 100, the wafer W is placed on the upper surface (i.e., the wafer placement surface) 104a of the center portion of the electrostatic chuck 104. Then, a DC voltage is applied to the electrodes 110 of the electrostatic chuck 104 from the DC power supply 121c, thereby electrostatically attracting and holding the product wafer W by the electrostatic chuck 104. Furthermore, after the product wafer W is fed in, the interior of the chamber 100 is depressurized to a predetermined vacuum level using the exhaust system 180.

[0114] Next, processing gas is supplied from the gas supply unit 160 to the processing space 100s via the upper electrode 102. Additionally, high-frequency electrical power (HF) for plasma generation is supplied from the RF power supply unit 170 to the lower electrode 103, thereby exciting the processing gas and generating plasma. At this time, in order to introduce ions into the product wafer W, a pulsed DC voltage for biasing from the bias unit 140 to the electrode 112 can be applied. Then, plasma processing is performed on the product wafer W by the action of the generated plasma.

[0115] In addition, during plasma processing, heat transfer gas is released to the product wafer W that is held by the electrostatic chuck 104.

[0116] Furthermore, during plasma processing, a DC voltage is applied to the electrodes 111 of the electrostatic chuck 104 from DC power supplies 121a and 121b, thereby electrostatically attracting and holding the edge ring E on the ring mounting surface of the upper surface 104b, including the periphery of the electrostatic chuck 104. Additionally, during plasma processing, to introduce ions into the edge ring E, a pulsed DC voltage for biasing the electrode 113 can be applied from the biasing section 140. Furthermore, during plasma processing, heat transfer gas supplied from the gas supply section 150 is supplied to the gap between the ring mounting surface and the edge ring E via the gas release hole 104c.

[0117] When plasma processing ends, the supply of high-frequency power (HF) from the RF power supply unit 170 and the supply of processing gas from the gas supply unit 160 are stopped. During plasma processing, if a bias DC voltage is applied for ion introduction, these are also stopped. Next, the electrostatic chuck 104 stops holding the product wafer W in place. Additionally, the supply of heat transfer gas to the bottom surface of the wafer W can also be stopped.

[0118] Next, the lifting device 107 raises the product wafer W, causing it to detach from the electrostatic chuck 104. During this detachment, the product wafer W can undergo a de-energization process. Then, the transport robot 70 removes the product wafer W from the chamber 100, completing the series of wafer processing steps.

[0119] <Example 1 of installation sequence>

[0120] Next, an example of the installation sequence of the edge ring E within the processing module 60, performed by the plasma processing system 1, will be described. Figure 5 This is a flowchart illustrating Example 1, showing the installation sequence of the edge ring E. Furthermore, the following steps are executed by the plasma processing system 1 under the control and calculation of the control device 80 (specifically, the processing unit 91) based on the program stored in the storage unit 92.

[0121] For example, such as Figure 5 As shown, firstly, the edge ring E, which is transported into the chamber 100 by the transport robot 70 and handed over to the lifting mechanism including the lifter 108, is lowered using the lifting mechanism and placed on the ring placement surface (step S1). This step S1 is performed when there is no wafer W in the chamber 100.

[0122] In step S1, specifically, for example, firstly, the edge ring E inside the storage module 61 is delivered into the chamber 100 of the processing module 60, which is the object to be installed, using the conveying robot 70.

[0123] More specifically, for example, the edge ring E within the receiving module 61 is held by the conveyor arm 71 of the conveyor robot 70. Furthermore, the on / off valve 62 corresponding to the processing module 60, which is the object to be installed, is opened, and the conveyor arm 71 holding the edge ring E is inserted into the chamber 100 via the feed inlet / outlet (not shown). Then, the edge ring E is conveyed by the conveyor arm 71 to the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 105a of the support 105. At this time, no wafer W is placed on the upper surface 104a of the central portion of the electrostatic chuck 104.

[0124] Next, the edge ring E is transferred from the conveyor robot 70 to the elevator 108.

[0125] Specifically, the entire elevator 108 is raised, transferring the edge ring E from the conveyor arm 71 to the elevator 108. Then, the conveyor arm 71 is pulled out of the chamber 100, and the on / off valve 62 is closed.

[0126] Next, the edge ring E is lowered using a lifting mechanism including the lifter 108 and placed on the upper surface 104b of the periphery of the electrostatic chuck 104, which serves as the ring placement surface.

[0127] Specifically, the elevator 108 is lowered until its upper end is housed in the insertion hole 121. As a result, the edge ring E is placed on the upper surface 104b of the periphery of the electrostatic chuck 104, which serves as the ring placement surface.

[0128] Next, the edge ring E that has been placed is electrostatically adsorbed onto the ring placement surface (step S2).

[0129] Specifically, a voltage is applied to the electrodes 111 of the electrostatic chuck 104 when there is no wafer W in the chamber 100.

[0130] More specifically, when there is no wafer W in the chamber 100 and an edge ring E is mounted on the upper surface 104b of the peripheral portion of the electrostatic chuck 104, which serves as the ring mounting surface, the DC power supplies 121a and 121b are turned on. As a result, a DC voltage of, for example, negative polarity is applied to the electrodes 111a and 111b of the electrostatic chuck 104.

[0131] Furthermore, the edge ring E can be vacuum-adsorbed before electrostatic adsorption. Specifically, gas can be vented around the ring mounting surface via the gas release hole 104c, which also functions as an venting hole.

[0132] More specifically, the switching valve 182 can be opened, and the exhaust system 180 can be used to exhaust gas around the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 105a of the support 105 via the gas release port 104c. As a result, the edge ring E is vacuum-adsorbed onto the upper surface 104b of the peripheral portion of the electrostatic chuck 104, which serves as the ring mounting surface.

[0133] Next, before plasma treatment of the product wafer W, plasma is generated in the chamber 100 to perform a stabilization step (step S3) that uses plasma to stabilize the electrostatic adsorption of the edge ring E on the electrostatic chuck 104, i.e., to perform an adsorption stabilization treatment on the edge ring E. The adsorption stabilization treatment of the edge ring E can be described as a treatment to improve the electrostatic adsorption force of the edge ring E on the electrostatic chuck 104.

[0134] In this step S3, specifically, for example, a pseudo-wafer W, which is a pseudo-substrate different from the product substrate, is first sent into the chamber 100 and placed on the wafer mounting surface (step S3a).

[0135] The dummy wafer W is stored, for example, in a front-opening wafer transfer box 31. The placement of the dummy wafer W on the wafer mounting surface is performed in the same manner as the placement of the wafer W on the wafer mounting surface in the wafer processing of the aforementioned processing module 60. In addition, the placed dummy wafer W is electrostatically attracted to the electrostatic chuck 104.

[0136] In addition, following step S3a, the adsorption stabilization treatment of the edge ring E is performed (step S3b). This step S3b includes a first step (step S3b1) and a second step (step S3b2).

[0137] In step S3b, specifically, with a dummy wafer W electrostatically adsorbed on the wafer mounting surface and an edge ring E electrostatically adsorbed on the ring mounting surface, a gas for adsorption stabilization processing is supplied from the gas supply unit 160 to the processing space 100s via the upper electrode 102. Alternatively, as an example, high-frequency electrical power HF for plasma generation is supplied from the RF power supply unit 170 to the lower electrode 103, thereby exciting the aforementioned gas and generating plasma. Charge (specifically, ions, etc.) moves from the generated plasma towards the edge ring E, thus increasing the charge on the edge ring E. As a result, the electrostatic adsorption force of the edge ring E on the electrostatic chuck 104 can be improved.

[0138] In addition, the high-frequency electrical power HF used for plasma generation can also be supplied to the upper electrode 102.

[0139] Furthermore, in the adsorption stabilization process of step S3b, in order to introduce ions into the edge ring E, a negative polarity pulsed DC voltage for biasing is applied from the bias portion 140 to the wafer support stage 101. Moreover, as described above, this step S3b includes a first step and a second step. In the first step, a negative polarity pulsed DC voltage is applied with a first bias voltage. And in the second step, after the first step, a negative polarity pulsed DC voltage is applied with a second bias voltage that is higher than the first bias voltage (i.e., its absolute value is larger than the first bias voltage).

[0140] For example, in the first step (step S3b1), a negatively polarized pulsed DC voltage is applied to the electrode 113 disposed on the periphery of the electrostatic chuck 104 for a predetermined time T1 (e.g., 10 seconds to 120 seconds) with a first bias voltage V1 (e.g., 1000V to 3000V). In the second step (step S3b2), a negatively polarized pulsed DC voltage is applied to the electrode 113 for a predetermined time T2 (e.g., 10 seconds to 120 seconds) with a second bias voltage V2 (e.g., 3000V to 5000V), which is higher than the first bias voltage V1. In one example, the predetermined time T1 and the predetermined time T2 may be equal.

[0141] Furthermore, in both the first and second steps, the negative-polarity pulsed DC voltage for biasing is continuously applied to electrode 113. However, in at least either the first or second step, the negative-polarity pulsed DC voltage for biasing may also be applied intermittently to electrode 113.

[0142] Additionally, step S3b may include a third step (step S3b3) after the second step, applying a negative-polarity pulsed DC voltage for biasing with a third bias voltage V3 that is higher than the second bias voltage V2.

[0143] For example, in the third step, a negatively polarized pulsed DC voltage is applied to electrode 113 for a specified time T3 (e.g., 30 seconds to 150 seconds) with a third bias voltage V3 (e.g., 5000V to 6000V) that is higher than the second bias voltage V2. In one example, the specified time T3 may be longer than the specified times T1 and T2.

[0144] Furthermore, in the third step, the negative polarity pulsed DC voltage for bias can be applied to electrode 113 intermittently; specifically, it can be applied to electrode 113 intermittently and periodically with a predetermined duty cycle. However, in the third step, the negative polarity pulsed DC voltage for bias can also be applied to electrode 113 continuously.

[0145] Furthermore, in the adsorption stabilization process, a DC voltage for biasing or an RF power for biasing can be applied to the electrode 112 located in the center of the electrostatic chuck 104 to introduce ions into the wafer W (specifically, the dummy wafer W).

[0146] In addition, during the adsorption stabilization process, the dummy wafer W can be electrostatically adsorbed onto the electrostatic chuck 104.

[0147] Furthermore, during the adsorption stabilization process, the heat transfer gas supplied from the gas supply unit 150 can be supplied through the gas release hole 104c to the gap between the upper surface 104b of the peripheral portion of the electrostatic chuck 104, which serves as the ring mounting surface, and the edge ring E.

[0148] When the adsorption stabilization process ends, the supply of high-frequency power HF from the RF power supply unit 170 and the supply of gas for the adsorption stabilization process from the gas supply unit 160 are stopped. If electrostatic adsorption of the dummy wafer W, application of DC voltage for biasing the dummy wafer W (or supply of RF power for biasing), and supply of the aforementioned heat transfer gas are performed during the adsorption stabilization process, these are also stopped.

[0149] In step S3, after the adsorption stabilization treatment in step S3b, the dummy wafer W is removed from the wafer mounting surface and sent out of the chamber 100 (step S3c).

[0150] This step is performed using a lift 107 and a conveyor robot 70.

[0151] Steps S3a to S3c can be repeated multiple times. That is, steps S3a to S3c can be performed on multiple dummy wafers W respectively.

[0152] In addition, in step S3, during the adsorption stabilization treatment in step S3b, when there is no wafer W on the wafer mounting surface of the electrostatic chuck 104, plasma is generated in the chamber 100, and the electrostatic chuck 104 is cleaned using plasma (step S3d).

[0153] In the aforementioned cleaning process, specifically, for example, after the dummy wafer W is delivered in step S3c, when the wafer W is not mounted on the upper surface 104a of the central portion of the electrostatic chuck 104, which serves as the wafer mounting surface, cleaning gas is supplied from the gas supply unit 160 to the processing space 100s via the upper electrode 102. At this time, the edge ring E continues to be electrostatically adsorbed onto the electrostatic chuck 104. Alternatively, as an example, high-frequency electrical power HF for plasma generation is supplied from the RF power supply unit 170 to the lower electrode 103, thereby exciting the aforementioned gas and generating plasma. Using the generated plasma, reaction products such as those adhering to the portion between the central portion of the electrostatic chuck 104 and the edge ring E can be removed.

[0154] In addition, the high-frequency electrical power HF used for plasma generation can also be supplied to the upper electrode 102.

[0155] The cleaning in step S3d is performed, for example, on each dummy wafer W. That is, the cleaning in step S3d is performed, for example, at the end of each step S3c.

[0156] In addition, step S3d can also be omitted.

[0157] The above steps complete the installation sequence.

[0158] <Main Effects of Example 1 on Installation Sequence>

[0159] In Example 1 of the installation sequence, the following steps are performed: The edge ring E, which is transported by the transport robot 70 into the chamber 100 and handed over to the lifting mechanism including the lifter 108, is lowered using the lifting mechanism and placed on the ring mounting surface; and the placed edge ring E is electrostatically adsorbed onto the ring mounting surface. Additionally, in Example 1 of the installation sequence, a stabilization step is performed: Before plasma treatment of the product wafer W, plasma is generated within the chamber 100, and the electrostatic adsorption of the edge ring E on the electrostatic chuck 104 is stabilized using the plasma. Therefore, the electrostatic adsorption force of the edge ring E on the electrostatic chuck 104 can be improved. That is, the edge ring E can be appropriately electrostatically adsorbed onto the wafer support stage 101.

[0160] Furthermore, in Example 1 of the mounting sequence, the aforementioned stabilization step includes applying a pulsed DC voltage for biasing the wafer support stage 101. This application step further includes a first step of applying a first bias voltage V1, and a second step of applying a second bias voltage higher than the first bias voltage V1 after the first step. Initially, because the edge ring E has a weak electrostatic attraction to the electrostatic chuck 104, a high bias voltage can cause a discharge between the ring mounting surface of the electrostatic chuck 104 and the edge ring E, potentially leading to damage to at least one of the electrostatic chuck 104 and the edge ring E. Therefore, in Example 1 of the mounting sequence, the bias voltage of the pulsed DC voltage applied to the wafer support stage 101 is higher in the second step than in the preceding first step; that is, lower in the preceding first step than in the second step. This suppresses the aforementioned discharge. Furthermore, according to Example 1 of the installation sequence, unlike the present example, maintaining the bias voltage at a low value as in the first step until the end in the step of applying the pulsed DC voltage for biasing can significantly improve the electrostatic attraction of the edge ring E to the electrostatic chuck 104. Also, unlike the present example, in Example 1 of the installation sequence, compared to maintaining the bias voltage at a small value as in the first step until the end in the step of applying the pulsed DC voltage for biasing, the amount of heat input from the plasma to the edge ring E is greater. Therefore, moisture adhering to the edge ring E, which is one of the causes of the aforementioned discharge, can be efficiently removed from the edge ring E.

[0161] In Example 1 of the installation sequence, the step of applying a pulsed DC voltage for bias further includes a third step after the second step: applying a third bias voltage V3, which is higher than the second bias voltage V2, for biasing. Therefore, it is possible to suppress discharge between the ring mounting surface of the electrostatic chuck 104 and the edge ring E, and to more efficiently improve the electrostatic attraction of the edge ring E to the electrostatic chuck 104.

[0162] Furthermore, based on repeated experiments conducted by the inventors, when a pulsed DC voltage for biasing is continuously applied to the wafer support stage 101 at a bias voltage as high as in the third step, damage to the upper electrode 102 due to in-plane non-uniformity in the temperature distribution of the upper electrode 102 can occur. In this case, by intermittently applying a pulsed DC voltage for biasing to the wafer support stage 101 during the step of applying a bias voltage as high as in the third step, the aforementioned damage to the upper electrode 102 can be suppressed.

[0163] <Example 2 of installation sequence>

[0164] Figure 6 This is a flowchart of Example 2, which shows the installation sequence of the edge ring E.

[0165] In Example 2 of the installation sequence, in addition to performing all steps S1 to S3 of Example 1 of the installation sequence, after the adsorption stabilization treatment in step S3b and before the plasma treatment of the product wafer W, an aging treatment (step S11) is performed in the chamber 100.

[0166] Specifically, for example, after step S3, similar to step S3a, the dummy wafer W is sent into the chamber 100, placed thereon, and electrostatically adsorbed onto the wafer mounting surface.

[0167] Then, with a dummy wafer W electrostatically adsorbed on the wafer mounting surface and an edge ring E electrostatically adsorbed on the ring mounting surface, aging treatment gas is supplied from the gas supply unit 160 to the processing space 100s via the upper electrode 102. Alternatively, as an example, high-frequency electrical power HF for plasma generation is supplied from the RF power supply unit 170 to the lower electrode 103, thereby exciting the aforementioned gas and generating plasma. Using the generated plasma, for example, a predetermined amount of film is formed on the inner wall of the chamber 100, to perform aging treatment within the chamber 100, thus stabilizing the state within the chamber 100.

[0168] In addition, the high-frequency electrical power HF used for plasma generation can also be supplied to the upper electrode 102.

[0169] During the aging process, the edge ring E continues to be electrostatically attracted to the electrostatic chuck 104. Additionally, during the aging process, the dummy wafer W can also be electrostatically attracted to the electrostatic chuck 104.

[0170] During the final aging process, the supply of high-frequency power HF from the RF power supply unit 170 and the supply of aging gas from the gas supply unit 160 are stopped. If electrostatic adsorption of the dummy wafer W is performed during plasma processing, these are also stopped.

[0171] Then, similar to step S3c, the dummy wafer W is removed from the wafer mounting surface and sent out of the chamber 100.

[0172] Furthermore, if the cleaning in step S3d is not performed, the dummy wafer W used in the stabilization process of step S3b may not be removed from the wafer support stage 101, and may also be used in the aging process of step S11. Alternatively, if cleaning will not damage the state inside the chamber 100 after aging, the dummy wafer W used in the stabilization process of step S3b may not be removed from the wafer support stage 101, and may be used in the aging process of step S11, with the cleaning in step S3d performed after it is sent out of the chamber 100.

[0173] However, the aging process within chamber 100 can also be performed without a dummy wafer W mounted on the wafer mounting surface.

[0174] <Example 3 of the installation sequence>

[0175] In the above example, in order to introduce ions from the plasma generated in chamber 100 to the edge ring E, a pulsed DC voltage for biasing is applied from the biasing section 140, but it is also possible to supply RF power for biasing instead. In this case, the biasing power supply 141a of the biasing section 140 applies RF power for biasing to the electrode 113.

[0176] In Example 3, regarding the installation sequence of the RF power supplied for bias, as follows: Figure 7 As shown, first, perform steps S1 and S2 of the installation sequence described in Example 1.

[0177] Next, a stabilization step (step S3A) is performed: before plasma treatment of the product wafer W, plasma is generated in the chamber 100, and the edge ring E is stabilized by electrostatic adsorption on the electrostatic chuck 104 using plasma.

[0178] In this step S3A, the above-mentioned step S3a is performed to place the dummy wafer W on the wafer mounting surface.

[0179] In addition, following step S3a, the adsorption stabilization treatment of the edge ring E is performed (step S3Ab). This step S3Ab includes a first step (step S3Ab1) and a second step (step S3Ab2).

[0180] In step S3Ab, specifically, with a dummy wafer W electrostatically adsorbed on the wafer mounting surface and an edge ring E electrostatically adsorbed on the ring mounting surface, a gas for adsorption stabilization processing is supplied from the gas supply unit 160 to the processing space 100s via the upper electrode 102. Alternatively, as an example, high-frequency electrical power HF for plasma generation is supplied from the RF power supply unit 170 to the lower electrode 103, thereby exciting the aforementioned gas and generating plasma. Charge (specifically, ions, etc.) moves from the generated plasma towards the edge ring E, thus increasing the charge on the edge ring E. As a result, the electrostatic adsorption force of the edge ring E on the electrostatic chuck 104 can be improved.

[0181] In addition, the high-frequency electrical power HF used for plasma generation can also be supplied to the upper electrode 102.

[0182] Furthermore, in the adsorption stabilization process of step S3Ab, RF power for biasing is supplied to the wafer support stage 101 from the bias section 140 in order to introduce ions into the edge ring E. Moreover, as described above, this step S3Ab includes a first step and a second step. In the first step, RF power is supplied with a first bias power P1. And in the second step, after the first step, RF power is supplied with a second bias power P2, which is greater than the first bias power P1.

[0183] Furthermore, in both the first and second steps, the bias RF power is continuously applied to electrode 113. However, in at least either the first or second step, the bias RF power may also be applied intermittently to electrode 113.

[0184] Additionally, step S3Ab may include a third step (step S3Ab3) after the second step, in which a third bias power P3, which is greater than the second bias power P2, is supplied with RF power for biasing.

[0185] Furthermore, in the third step, the bias RF power can be supplied to electrode 113 intermittently, specifically, it can be supplied to electrode 113 intermittently and periodically with a predetermined duty cycle. However, in the third step, the bias RF power can also be supplied to electrode 113 continuously. Here, the duty cycle refers to the proportion of the period during which bias power is supplied within one cycle.

[0186] Furthermore, in the adsorption stabilization process, a DC voltage for biasing or an RF power for biasing can be applied to the electrode 112 located in the center of the electrostatic chuck 104 to introduce ions into the wafer W (specifically, the dummy wafer W).

[0187] In addition, during the adsorption stabilization process, the dummy wafer W can be electrostatically adsorbed onto the electrostatic chuck 104.

[0188] The other aspects of step S3A are the same as step S3 in Example 1 of the above installation sequence.

[0189] In this example, similar to Example 1 with the same installation sequence, it is possible to suppress discharge between the ring mounting surface of the electrostatic chuck 104 and the edge ring E, and to efficiently improve the electrostatic attraction of the edge ring E to the electrostatic chuck 104. Furthermore, in this example, it is also possible to efficiently remove moisture adhering to the edge ring E.

[0190] Furthermore, in this example, the step of supplying the RF power for biasing further includes a third step: after the second step, supplying the RF power for biasing with a third bias power P3 that is greater than the second bias power P2. Therefore, similar to Example 1 with the same installation sequence, it is possible to suppress the discharge between the ring mounting surface of the electrostatic chuck 104 and the edge ring E, and to improve the electrostatic attraction of the edge ring E to the electrostatic chuck 104 more efficiently.

[0191] Furthermore, in this example, during the step of supplying bias power at a level as large as that in the third step, the RF power for biasing is intermittently applied to the wafer support stage 101. Therefore, similar to Example 1 with the same mounting sequence, it is possible to suppress the occurrence of damage to the upper electrode 102.

[0192] Furthermore, in this example, in order to introduce ions into the wafer W, RF electrical power for biasing can be supplied.

[0193] <Example 4 of the installation sequence>

[0194] Figure 8 This is a flowchart of Example 4, which shows the installation sequence of the edge ring E. Figure 9 This is a diagram showing the state around the wafer support stage 101 during step S21, which is described later, i.e., removing moisture from the edge ring E.

[0195] In example 4 of the installation sequence, such as Figure 8 As shown, the edge ring E is conveyed into the chamber 100, and after its moisture is removed in the chamber 100, it is placed on the ring placement surface (step S21). That is, the moisture is removed in the chamber 100 before the edge ring E, which is to be conveyed into the chamber 100, is placed on the ring placement surface.

[0196] Specifically, before placing the edge ring E on the ring-mounting surface of the upper surface 104b of the peripheral portion of the electrostatic chuck 104, as... Figure 9 As shown, when the edge ring E is separated from the ring mounting surface by a lifting mechanism including the lifter 108, plasma is generated in the chamber 100 to remove moisture from the edge ring E.

[0197] More specifically, for example, firstly, similar to step S1, the conveying robot 70 delivers the edge ring E inside the storage module 61 into the chamber 100 of the processing module 60, which is the object to be installed on the edge ring E.

[0198] Next, similar to step S1, the edge ring E is transferred from the transport robot 70 to the elevator 108.

[0199] Next, unlike step S1, plasma is generated in chamber 100 to remove the moisture adhering to the surface of edge ring E.

[0200] Specifically, with the edge ring E separated from the ring mounting surface of the electrostatic chuck 104 by a lifting mechanism including the lifter 108, gas for moisture removal is supplied from the gas supply unit 160 to the processing space 100s via the upper electrode 102. Alternatively, as an example, high-frequency electrical power HF for plasma generation is supplied from the RF power supply unit 170 to the lower electrode 103, thereby exciting the aforementioned gas and generating plasma. Using the generated plasma, moisture adhering to the edge ring E is removed by directly or by heating the edge ring E to vaporize it. In particular, moisture adhering to the back side (i.e., the side facing the ring mounting surface) of the edge ring E, which is difficult to remove when it is mounted on the ring mounting surface, is also removed.

[0201] The plasma generation time in step S21 is, for example, tens of seconds.

[0202] As long as plasma is formed below the edge ring, the height of the edge ring E when the moisture is removed, i.e. when the plasma is generated, can be higher or lower than the height when the wafer W from the transport robot 70 to the elevator 108 is completed.

[0203] In addition, the gas used for removing the moisture can be oxygen, nitrogen, or rare gases such as argon.

[0204] Alternatively, the high-frequency electrical power HF used for plasma generation can be supplied to the upper electrode 102. The conditions for plasma generation in step S21 (e.g., the pressure inside the chamber 100, the magnitude of the high-frequency electrical power HF used for plasma generation, etc.) can be the same as the conditions for plasma generation in the cleaning step of step S3d. This allows for the suppression of damage to the electrostatic chuck 104 caused by plasma.

[0205] When the removal of moisture from the edge ring E is completed, the supply of high-frequency electrical power HF from the RF power supply unit 170 and the supply of gas for moisture removal from the gas supply unit 160 are stopped.

[0206] In step S21, subsequently, similar to step S1, the edge ring E is lowered using a lifting mechanism including the lifter 108 and placed on the ring mounting surface of the electrostatic chuck 104.

[0207] According to this example, moisture is removed from the edge ring E before it is placed on the ring mounting surface, thus suppressing the discharge caused by moisture between the ring mounting surface of the electrostatic chuck 104 and the edge ring E.

[0208] exist Figure 8In the example, after the moisture removal step of the edge ring E in step S21, only steps S2 and S3 of the processing sequence of Example 1 are performed, but step S11 of the processing sequence of Example 2 can also be performed. Alternatively, after the moisture removal step of the edge ring E in step S21, steps S2 and S3A of the processing sequence of Example 3 can also be performed.

[0209] In the above example, during plasma generation in the moisture removal step of the edge ring E in step S21, nothing is placed on the upper surface 104a of the central portion of the wafer mounting surface, which serves as the electrostatic chuck 104, but a small wafer may still be placed there. A small wafer refers to a wafer that, when placed on the wafer mounting surface, will not interfere with the rising and falling edge ring E and has a diameter that can cover the entire wafer mounting surface.

[0210] Alternatively, instead of generating plasma within chamber 100, the edge ring E can be left idle for, for example, more than one hour by using a lifting mechanism including lifter 108 to separate the edge ring E from the ring mounting surface, thereby removing moisture from the edge ring E. However, by using plasma, moisture can be removed from the edge ring E with high efficiency.

[0211] <Other variations>

[0212] In the above examples, the adsorption stabilization process is performed with a dummy wafer W placed on the upper surface 104a of the central portion of the electrostatic chuck 104, but it can also be performed without a dummy wafer W. However, by performing the process with a dummy wafer W placed on it, damage to the electrostatic chuck 104, such as the upper surface 104a of the central portion, caused by plasma can be suppressed.

[0213] In cases where a cover ring is placed on a wafer support stage used in a plasma processing apparatus, in addition to placing an edge ring E, a cover ring is also placed to cover the outer surface of the edge ring. The technology of the present invention can also be applied to this situation.

[0214] Figure 10 This is a partially enlarged view used to illustrate an example of a wafer support stage configured to support a cover ring CA in addition to an edge ring EA.

[0215] Below, with Figure 3 Centered on the different points of the wafer support stage 101 shown, for Figure 10 The wafer support stage 101A will be described in detail.

[0216] Figure 10 The wafer support stage 101A, in addition to being with Figure 2The wafer support stage 101 shown also includes an electrostatic chuck 104, an insulator 106, and a lifter 107, as well as a lower electrode 103A, a support body 105A, and a lifter 108A. The wafer support stage 101A is configured to hold both the edge ring EA and the cover ring CA.

[0217] The lower outer periphery of the lower electrode 103A and the upper inner periphery of the support 105A are formed to overlap when viewed from above. Furthermore, a through hole 121A is provided in both the lower electrode 103A and the support 105A for the insertion of the lifting device 108A. The through hole 121A is formed to extend downward from the upper surface 105Aa of the inner periphery of the support 105A and reach the bottom surface of the lower outer periphery of the lower electrode 103A.

[0218] The electrostatic chuck 104 is mounted on the lower electrode 103A. An edge ring EA is mounted on the upper surface 104b of the periphery of the electrostatic chuck 104, and a cover ring CA is mounted on the upper surface 105Aa of the support body 105A. The height of the upper surface 105Aa of the support body 105A is approximately the same as the height of the upper surface of the lower electrode 103A.

[0219] The edge ring EA is formed with an outer diameter larger than that of the electrostatic chuck 104. Therefore, when the edge ring EA is placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104, the peripheral portion of the edge ring EA extends out from the peripheral portion of the electrostatic chuck 104.

[0220] The cover ring CA is a component configured to cover the outer surface of the edge ring EA. The cover ring CA is also topographically formed to appear ring-shaped when viewed from above, similar to the edge ring EA. In one embodiment, the cover ring CA has a radially inwardly projecting protrusion CA1 at its bottom.

[0221] Additionally, the cover ring CA has through holes CA2 at positions corresponding to the lifter 108A, through which the lifter 108A is inserted. The through holes CA2 extend from the bottom surface of the cover ring CA to the edge ring EA. The through holes CA2 are provided in the portion of the cover ring CA that overlaps with the periphery of the edge ring EA when viewed from above (specifically, for example, the protrusion CA1).

[0222] The lifter 108A can protrude from the upper surface 105Aa of the inner periphery of the support 105A, and can be raised and lowered in a manner that allows adjustment of the amount of protrusion from the upper surface 105Aa. Specifically, the lifter 108A can protrude from the upper surface 105Aa of the inner periphery of the support 105A at a position that overlaps with the edge ring EA and the cover ring CA when viewed from above. A through hole 121A for the lifter 108A to pass through is formed at the position that overlaps with the edge ring EA and the cover ring CA when viewed from above.

[0223] Lifter 108A and Figure 3 Similarly, the lifting devices 108 are arranged in three or more spaced apart from each other along the circumference of the electrostatic chuck 104.

[0224] In addition, the lifting device 108A has a first engaging portion 108Aa and a second engaging portion 108Ab.

[0225] The first engaging portion 108Aa is formed by the upper part of the lifting device 108A, protruding upward from the through hole CA2 of the cover ring CA, and engaging with the edge ring E. The first engaging portion 108Aa is configured such that when the lifting device 108A rises, it passes through the through hole CA2 of the cover ring CA and abuts against the bottom surface of the edge ring EA, thereby supporting the edge ring EA from the bottom surface.

[0226] The second engaging portion 108Ab is located below the first engaging portion 108Aa and engages with the cover ring CA. The second engaging portion 108Ab is configured such that it does not pass through the through hole CA2 of the cover ring CA, but abuts against the bottom surface of the cover ring CA, thereby supporting the cover ring CA from the bottom surface.

[0227] Furthermore, the second engaging portion 108Ab is connected to the root end side of the first engaging portion 108Aa along the axial direction of the lifter 108A. Additionally, the second engaging portion 108Ab has a protrusion 108Ac at the location where it connects with the first engaging portion 108Aa, protruding outward from the outer periphery of the first engaging portion 108Aa.

[0228] The specific shapes of the first engaging portion 108Aa, the second engaging portion 108Ab, and the protrusion 108Ac are not particularly limited. For example, the first engaging portion 108Aa, the second engaging portion 108Ab, and the protrusion 108Ac can each be a cylindrical component and coaxial with each other.

[0229] The aforementioned actuator 118 causes the lifting device 108A, which is engaged with the second engaging part 108b, to move up and down, thereby causing the cover ring CA to move up and down.

[0230] Additionally, the actuator 118 causes the lifter 108, which is engaged with the first engagement portion 108Aa, to move up and down, thereby causing the edge ring E to move up and down.

[0231] When using the wafer support stage 101A, the edge ring EA can be installed as a single unit or simultaneously with the cover ring CA.

[0232] When mounting the edge ring EA unit, the step of placing the edge ring EA on the wafer support stage 101 is performed, for example, in the following manner.

[0233] That is, for example, the conveying robot 70 delivers the edge ring E inside the storage module 61 into the chamber 100 of the processing module 60, which is the installation object of the edge ring EA.

[0234] Specifically, the edge ring EA within the receiving module 61 is held by the conveyor arm 71 of the conveyor robot 70. Next, the conveyor arm 71, holding the edge ring EA, is inserted into the chamber 100 of the processing module 60, which is the object of the installation, via the feed inlet / outlet (not shown). Then, the edge ring EA is conveyed by the conveyor arm 71 to the upper surface 104b of the peripheral portion of the electrostatic chuck 104. At this time, the cover ring CA is placed on the upper surface 105a of the support 105.

[0235] Next, the edge ring E is placed from the transport robot 70 onto the electrostatic chuck 104.

[0236] Specifically, the entire lifter 108A is raised, transferring the edge ring EA from the conveyor arm 71 to the first engaging portion 108Aa of the lifter 108A after passing through the through hole CA2 of the cover ring CA. At this time, the lifter 108A is raised until the top of the first engaging portion 108Aa reaches a predetermined height. This predetermined height refers to the height at which the conveyor arm 71 will not interfere with the edge ring EA and the cover ring CA when the conveyor arm 71 is inserted or removed between the cover ring CA, which is mounted on the support body 105A, and the edge ring EA, which is supported on the first engaging portion 108Aa.

[0237] Next, the conveyor arm 71 is withdrawn from the chamber 100. Additionally, the elevator 108A is lowered. This places the edge ring EA onto the upper surface 104b of the periphery of the electrostatic chuck 104.

[0238] On the other hand, when the edge ring EA and the cover ring CA are installed simultaneously, the step of placing the edge ring EA on the wafer support stage 101 is performed, for example, in the following manner.

[0239] That is, for example, the conveying robot 70 delivers the cover ring CA, which supports the edge ring EA, from the storage module 61 into the chamber 100 of the processing module 60, which is the object to be installed for the edge ring EA and the cover ring CA.

[0240] Specifically, the conveyor arm 71 of the conveyor robot 70 holds the cover ring CA, which supports the edge ring EA, within the receiving module 61. Next, the conveyor arm 71, holding the cover ring CA, is inserted into the chamber 100 of the processing module 60, which is the object to be installed, via the feed inlet / outlet (not shown). Then, the conveyor arm 71 transports the cover ring CA, supporting the edge ring EA, above the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 105Aa of the support body 105A.

[0241] Next, the edge ring EA and the cover ring are placed from the transport robot 70 onto the electrostatic chuck 104 and the support 105A.

[0242] Specifically, the entire lifter 108 is raised, transferring the edge ring E from the cover ring CA held by the conveyor arm 71 to the first engaging portion 108Aa of the lifter 108A after passing through the through hole CA2 of the cover ring CA. Then, the entire lifter 108A continues to rise, transferring the cover ring CA from the conveyor arm 71 to the second engaging portion 108Ab of the lifter 108A. At this time, the lifter 108A is raised until the top of the second engaging portion 108Ab reaches a predetermined height. This predetermined height refers to the height at which the conveyor arm 71 will not interfere with the cover ring CA when inserting or removing the conveyor arm 71 between the upper surface 104a of the central portion of the electrostatic chuck 104 and the cover ring CA supported on the second engaging portion 108Ab.

[0243] Next, the conveyor arm 71 is withdrawn from the chamber 100. Additionally, the elevator 108 is lowered. This causes the edge ring EA and the cover ring CA to be placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104 and the upper surface 105Aa of the support body 105A. Specifically, first, the cover ring CA is placed on the upper surface 105Aa of the support body 105A, and then the edge ring EA is placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104.

[0244] The embodiments disclosed herein should be considered illustrative rather than limiting in all respects. The above embodiments may be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit. For example, the constituent elements of the above embodiments can be arbitrarily combined. From such arbitrary combinations, the functions and effects of each constituent element in the combination can naturally be obtained, and other functions and effects that will be apparent to those skilled in the art according to the description herein can also be obtained.

[0245] Furthermore, the effects described in this specification are merely illustrative or exemplary, and not limiting. That is, the technology of the present invention can achieve the above-described effects, and can also achieve other effects that are obvious to those skilled in the art according to the description of this specification, or the technology of the present invention can achieve other effects that are obvious to those skilled in the art according to the description of this specification to replace the above-described effects.

[0246] Furthermore, the following technical solutions also fall within the scope of this invention.

[0247] (1) A substrate processing system, characterized in that: it comprises a plasma processing device, a depressurization conveying device connected to the plasma processing device, and a control device, wherein the plasma processing device comprises: a processing container capable of being depressurized; a substrate support stage disposed within the processing container, comprising a substrate mounting surface, a ring mounting surface capable of mounting an edge ring in such a way that the edge ring surrounds the substrate, and an electrostatic chuck for electrostatically adsorbing the edge ring onto the ring mounting surface, the substrate support stage being connected to a power supply for supplying a pulsed DC voltage for bias; a lifting mechanism for raising and lowering the edge ring; and a plasma generating unit for generating plasma within the processing container, the depressurization conveying device having a conveying robot for conveying the edge ring, and the control device comprising: a plasma processing ... The control device can control: a placement step in which the edge ring, transported by the conveying robot to the processing container and handed over to the lifting mechanism, is lowered and placed on the ring placement surface; a step in which the placed edge ring is electrostatically adsorbed on the ring placement surface; and a stabilization step in which plasma is generated in the processing container before plasma treatment of the product substrate, thereby stabilizing the electrostatic adsorption of the edge ring on the electrostatic chuck, the stabilization step including an application step of applying a pulsed DC voltage for bias to the substrate support, the application step including: a first step of applying a first bias voltage; and a second step of applying a second bias voltage higher than the first bias voltage after the first step.

[0248] (2) A substrate processing system, characterized in that it comprises a plasma processing device, a depressurization conveying device connected to the plasma processing device, and a control device, wherein the plasma processing device comprises: a processing container capable of being depressurized; a substrate support stage disposed within the processing container, comprising a substrate mounting surface, a ring mounting surface capable of mounting an edge ring in such a way that the edge ring surrounds the substrate, and an electrostatic chuck for electrostatically adsorbing the edge ring onto the ring mounting surface, the substrate support stage being connected to a power supply for supplying RF power for bias; a lifting mechanism for raising and lowering the edge ring; and a plasma generation unit for generating plasma within the processing container, the depressurization conveying device having a conveying robot for conveying the edge ring, and the control device... The device can control the following steps: a placement step whereby the edge ring, transported by the conveying robot to the processing container and handed over to the lifting mechanism, is lowered and placed on the ring placement surface; a step whereby the placed edge ring is electrostatically adsorbed onto the ring placement surface; and a stabilization step whereby plasma is generated in the processing container before plasma treatment of the product substrate, stabilizing the electrostatic adsorption of the edge ring on the electrostatic chuck, the stabilization step including a supply step of supplying bias RF power to the substrate support stage, the supply step including: a first step of supplying a first bias power; and a second step after the first step of supplying a second bias power greater than the first bias power.

[0249] (3) According to the substrate processing system described in (1) above, the control device is also capable of controlling the step of performing an aging treatment in the processing container after stabilization and before performing the plasma treatment on the product substrate.

[0250] (4) The substrate processing system according to (1) or (3) above, wherein the stabilization is performed with a pseudo substrate different from the product substrate placed on the substrate mounting surface of the electrostatic chuck.

[0251] (5) The substrate processing system according to any one of (1), (3) or (4) above, wherein the stabilization step includes: generating plasma in the processing container to clean the electrostatic chuck when there is no substrate on the substrate mounting surface of the electrostatic chuck.

[0252] (6) The substrate processing system according to any one of (1), (3) to (5) above, wherein the application step further includes: a third step of applying a third bias voltage higher than the second bias voltage after the second step.

[0253] (7) The substrate processing system according to (6) above, wherein, in the third step, the pulsed DC voltage is intermittently applied to the substrate support stage with the third bias voltage.

[0254] (8) The substrate processing system according to any one of (1), (3) to (7) above, wherein, in the application step, a pulsed negative DC voltage is applied, and the absolute value of the second bias voltage is greater than the absolute value of the first bias voltage.

[0255] (9) The substrate processing system according to any one of (1), (3) to (8) above, wherein the control device is further capable of performing the step of generating plasma in the processing container and removing moisture from the edge ring before the loading step, while the edge ring is separated from the ring loading surface by the lifting mechanism.

[0256] (10) According to the substrate processing system described in (2) above, wherein the control device is also capable of controlling the step of performing an aging treatment in the processing container after stabilization and before performing the plasma treatment on the product substrate.

[0257] (11) The substrate processing system according to (2) or (10) above, wherein the stabilization is performed with a pseudo substrate different from the product substrate placed on the substrate mounting surface of the electrostatic chuck.

[0258] (12) The substrate processing system according to (2), (10) or (11) above, wherein the stabilization step includes: generating plasma in the processing container to clean the electrostatic chuck when there is no substrate on the substrate mounting surface of the electrostatic chuck.

[0259] (13) The substrate processing system according to any one of (2), (10) to (12) above, wherein the supply step further includes: a third step of supplying a third bias power greater than the second bias power after the second step.

[0260] (14) The substrate processing system according to (13) above, wherein, in the third step, the RF power is intermittently supplied to the substrate support stage with the third bias power.

[0261] (15) The substrate processing system according to any one of (2), (10) to (14) above, wherein the control device is further capable of performing the step of generating plasma in the processing container and removing moisture from the edge ring before the placement step, while the edge ring is separated from the ring placement surface by the lifting mechanism.

[0262] (16) A method for mounting an edge ring, characterized in that it includes: a step of mounting the edge ring on the ring mounting surface of an electrostatic chuck of a substrate support stage disposed in a processing container within a plasma processing apparatus; a step of electrostatically adsorbing the mounted edge ring onto the ring mounting surface; and a stabilization step of generating plasma in the processing container before plasma processing a product substrate to be mounted on the substrate mounting surface of the electrostatic chuck, and using the plasma to stabilize the electrostatic adsorption of the edge ring on the electrostatic chuck, the stabilization step including: an application or supply step of applying a pulsed DC voltage for bias or supplying RF power for bias to the substrate support stage, the application or supply step including: a first step of applying a first bias voltage or supplying a first bias power; and a second step of applying a second bias voltage higher than the first bias voltage or supplying a second bias power greater than the first bias power after the first step.

[0263] Explanation of reference numerals in the attached figures

[0264] 1. Plasma processing system, 50. Transmission module, 70. Conveying robot, 80. Control device, 100. Chamber, 101, 101A. Wafer support stage, 102. Upper electrode, 104. Electrostatic chuck, 104a. Upper surface of the central part, 104b. Upper surface of the peripheral part, 108, 108A. Elevator, 140. Bias section, 170. RF power supply section, E, EA. Edge ring, W. Wafer.

Claims

1. A substrate processing system, characterized in that: It includes a plasma processing device, a pressure-reducing and conveying device connected to the plasma processing device, and a control device. The plasma processing device includes: A processing container capable of being depressurized; The substrate support stage disposed within the processing container includes a substrate mounting surface, a ring mounting surface capable of mounting an edge ring in such a way that the edge ring surrounds the substrate, and an electrostatic chuck for electrostatically adsorbing the edge ring onto the ring mounting surface. The substrate support stage is connected to a power supply for supplying a pulsed DC voltage for bias. A lifting mechanism for raising and lowering the edge ring; and A plasma generation unit for generating plasma within the processing container. The pressure-reducing conveying device includes a conveying robot for conveying the edge ring. The control device is capable of controlling: The lifting mechanism is used to lower the edge ring of the conveying robot into the processing container and hand it over to the lifting mechanism, thereby placing it on the ring placement surface. The step of electrostatically adsorbing the already placed edge ring onto the ring placement surface; and A stabilization step involving generating plasma within the processing container before plasma treatment of the product substrate, thereby stabilizing the electrostatic adsorption of the edge ring on the electrostatic chuck. The stabilization step includes applying a pulsed DC voltage for bias to the substrate support stage. The application step includes: a first step of applying a first bias voltage; and a second step of applying a second bias voltage higher than the first bias voltage after the first step.

2. The substrate processing system as described in claim 1, characterized in that: The control device can also control the step of performing an aging treatment inside the processing container after stabilization and before performing the plasma treatment on the product substrate.

3. The substrate processing system as described in claim 1, characterized in that: The stabilization is performed with a dummy substrate, different from the product substrate, placed on the substrate mounting surface of the electrostatic chuck.

4. The substrate processing system as described in claim 1, characterized in that: The stabilization step includes: generating plasma in the processing container to clean the electrostatic chuck when there is no substrate on the substrate mounting surface of the electrostatic chuck.

5. The substrate processing system as described in claim 1, characterized in that: The application step further includes a third step of applying a third bias voltage that is higher than the second bias voltage after the second step.

6. The substrate processing system as described in claim 5, characterized in that: In the third step, the pulsed DC voltage is intermittently applied to the substrate support stage with the third bias voltage.

7. The substrate processing system as described in claim 1, characterized in that: In the application step, a pulsed negative DC voltage is applied. The absolute value of the second bias voltage is greater than the absolute value of the first bias voltage.

8. The substrate processing system as described in claim 1, characterized in that: The control device is also capable of performing the following steps: before the loading step, while the edge ring is separated from the ring loading surface by the lifting mechanism, generating plasma in the processing container to remove moisture from the edge ring.

9. A substrate processing system, characterized in that: It includes a plasma processing device, a pressure-reducing and conveying device connected to the plasma processing device, and a control device. The plasma processing device includes: A processing container capable of being depressurized; A substrate support stage disposed within the processing container includes a substrate mounting surface, a ring mounting surface capable of mounting an edge ring in such a way that the edge ring surrounds the substrate, and an electrostatic chuck for electrostatically adsorbing the edge ring onto the ring mounting surface. The substrate support stage is connected to a power supply for supplying RF power for biasing. A lifting mechanism for raising and lowering the edge ring; and A plasma generation unit for generating plasma within the processing container. The pressure-reducing conveying device includes a conveying robot for conveying the edge ring. The control device is capable of controlling: The lifting mechanism is used to lower the edge ring of the conveying robot into the processing container and hand it over to the lifting mechanism, thereby placing it on the ring placement surface. The step of electrostatically adsorbing the already placed edge ring onto the ring placement surface; and A stabilization step involving generating plasma within the processing container before plasma treatment of the product substrate, thereby stabilizing the electrostatic adsorption of the edge ring on the electrostatic chuck. The stabilization step includes supplying the bias RF power to the substrate support stage. The supply step includes: a first step of supplying a first bias power; and a second step of supplying a second bias power that is greater than the first bias power after the first step.

10. The substrate processing system as described in claim 9, characterized in that: The control device can also control the step of performing an aging treatment inside the processing container after stabilization and before performing the plasma treatment on the product substrate.

11. The substrate processing system as described in claim 9, characterized in that: The stabilization is performed with a dummy substrate, different from the product substrate, placed on the substrate mounting surface of the electrostatic chuck.

12. The substrate processing system as described in claim 9, characterized in that: The stabilization step includes: generating plasma in the processing container to clean the electrostatic chuck when there is no substrate on the substrate mounting surface of the electrostatic chuck.

13. The substrate processing system as described in claim 9, characterized in that: The supply step further includes a third step, following the second step, supplying a third bias power that is greater than the second bias power.

14. The substrate processing system as described in claim 13, characterized in that: In the third step, the RF power is intermittently supplied to the substrate support stage with the third bias power.

15. The substrate processing system as described in claim 9, characterized in that: The control device is also capable of performing the following steps: before the loading step, while the edge ring is separated from the ring loading surface by the lifting mechanism, generating plasma in the processing container to remove moisture from the edge ring.

16. A method for installing an edge ring, characterized in that, include: The step of mounting an edge ring on the ring mounting surface of an electrostatic chuck on a substrate support stage located within a plasma processing apparatus. The step of electrostatically adsorbing the already placed edge ring onto the ring placement surface; and Before plasma treatment of the product substrate to be placed on the substrate mounting surface of the electrostatic chuck, plasma is generated in the treatment container, and a stabilization step is performed to stabilize the electrostatic adsorption of the edge ring on the electrostatic chuck using plasma. The stabilization step includes: applying a pulsed DC voltage for bias to the substrate support stage, or supplying RF power for bias. The application or supply step includes: a first step of applying a first bias voltage or supplying a first bias power; and a second step of applying a second bias voltage higher than the first bias voltage or supplying a second bias power greater than the first bias power after the first step.

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