An upper electrode assembly and semiconductor process chamber and semiconductor process apparatus

Abstract

The application provides an upper electrode assembly, a semiconductor process chamber and a semiconductor process equipment, which comprises a carrier fixed on a cavity of the semiconductor process chamber and provided with a receiving hole; a radio frequency isolation ring carried on the carrier and at least partially located in the receiving hole, used for blocking radio frequency energy; a gas shower head passing through a ring cavity of the radio frequency isolation ring and carried on the radio frequency isolation ring, and capable of feeding radio frequency energy into the semiconductor process chamber; a first positioning and adjusting module comprising a fixing member provided on the carrier and located outside the radio frequency isolation ring; a pressing member connected to the fixing member and extending to the center of the radio frequency isolation ring, and capable of clamping and positioning the radio frequency isolation ring and the gas shower head in cooperation with the carrier; and an adjusting mechanism provided on the fixing member and capable of moving along the radial direction of the radio frequency isolation ring to move the gas shower head in the radial direction. The upper electrode assembly can adjust the concentricity between the components, avoid energy crosstalk in the radio frequency field, and improve the film forming quality.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor equipment, and in particular to an upper electrode assembly, a semiconductor process chamber, and semiconductor process equipment. Background Art

[0002] Plasma-enhanced atomic layer deposition (PEALD) builds upon traditional ALD technology by introducing a plasma containing various highly reactive species (the plasma is generated by subjecting a gaseous precursor to radio frequency discharge). The plasma then reacts with the precursor to achieve thin film deposition. PEALD-deposited films are increasingly being used because they offer excellent conformality and precise thickness control.

[0003] In existing PEALD process equipment, the plasma is fed into the semiconductor process chamber through the upper electrode assembly. However, in the current process, there is energy crosstalk in the RF field caused by the upper electrode assembly, and the film quality is not ideal, which seriously affects the process quality. Summary of the Invention

[0004] In light of this, the present application provides an upper electrode assembly that not only reduces or even eliminates energy crosstalk within the radio frequency field, but also adjusts the concentricity between its components, thereby improving film formation quality. Furthermore, the present application provides a semiconductor process chamber including the upper electrode assembly, as well as semiconductor process equipment including the semiconductor process chamber.

[0005] In order to achieve the above objectives, this application provides the following technical solutions:

[0006] An upper electrode assembly, for being arranged in a semiconductor process chamber of a semiconductor process equipment, comprises:

[0007] A carrier, fixedly arranged on the cavity of the semiconductor process chamber and provided with a receiving hole;

[0008] a radio frequency isolation ring, carried by the carrier and at least partially located in the accommodating hole, for blocking radio frequency capability;

[0009] a gas shower head, passing through the ring cavity of the radio frequency isolation ring and carried on the radio frequency isolation ring, and at least used for feeding radio frequency energy into the semiconductor process chamber;

[0010] The first positioning and adjustment module includes: a fixing part, which is arranged on the supporting part and is located on the outside of the RF isolation ring; a pressing part, which is connected to the fixing part and extends toward the center direction of the RF isolation ring, and can cooperate with the supporting part to achieve clamping and positioning of the RF isolation ring and the gas shower head; an adjustment mechanism, which is arranged on the fixing part and can move radially along the RF isolation ring to push the gas shower head to move radially.

[0011] Optionally, in the above-mentioned upper electrode assembly, a gas guide channel for guiding inert gas is provided on the carrier, and the inert gas introduced into the semiconductor process chamber by the gas guide channel is blown toward the exhaust port of the semiconductor process chamber under the guidance of the RF isolation ring and the gas shower head.

[0012] Optionally, the above-mentioned upper electrode assembly further includes a positioning module for positioning the RF isolation ring and the gas shower head. In the circumference of the accommodating hole, multiple first positioning adjustment modules and multiple positioning modules are provided, and the first positioning adjustment modules and the positioning modules are alternately provided in the circumference of the accommodating hole.

[0013] Optionally, in the above-mentioned upper electrode assembly, the fixing member is movably and / or rotatably connected to the supporting member, and drives the pressing member to move and / or rotate back and forth to achieve positioning and release of the RF isolation ring and the gas shower head.

[0014] Optionally, in the above-mentioned upper electrode assembly, the adjustment mechanism includes:

[0015] a second through hole, provided on the fixing member along the radial direction of the radio frequency isolation ring;

[0016] a movable member, one end of which extends into the second through hole and is movable in the second through hole, and the other end of which is located on a side of the fixed member away from the RF isolation ring and is provided with a second threaded hole;

[0017] a third threaded hole, provided on the fixing member along the radial direction of the RF isolation ring, and having a thread direction opposite to that of the second threaded hole;

[0018] The adjusting member comprises a screw portion threadably matched with the second threaded hole and the third threaded hole.

[0019] Optionally, in the above-mentioned upper electrode assembly, the first positioning and adjustment module further includes an insulating pad provided on the fixing member and the pressing member and used for contacting the RF isolation ring and the gas shower head.

[0020] Optionally, in the upper electrode assembly, the RF isolation ring includes: a cylindrical portion located in the receiving hole; a first flange portion provided at the top end of the cylindrical portion and protruding radially outward relative to the cylindrical portion;

[0021] The gas shower head includes: a main body portion passing through the accommodating hole; a second flange portion provided at the top end of the main body portion and protruding radially outward relative to the main body portion;

[0022] The first flange portion overlaps the edge of the accommodating hole to enable the carrier to support the RF isolation ring; the second flange portion overlaps the first flange portion to enable the carrier to support the gas shower head.

[0023] Optionally, in the upper electrode assembly, the gas guide channel includes:

[0024] an annular channel, arranged around the accommodating hole;

[0025] an air guide hole, communicating with the annular channel and the accommodating hole, and having a plurality of air guide holes evenly arranged in the circumference of the accommodating hole;

[0026] An inlet channel is communicated with the annular channel, and an air inlet hole is formed on the surface of the supporting member.

[0027] A semiconductor process chamber comprises a cavity and an upper electrode assembly arranged on the cavity, wherein the upper electrode assembly is the above-mentioned upper electrode assembly.

[0028] Optionally, the semiconductor process chamber further includes an exhaust assembly disposed in the semiconductor process chamber, wherein the exhaust assembly includes:

[0029] a support ring surrounding the outer side of the lower electrode assembly;

[0030] an exhaust ring having an exhaust channel and supported by the support ring on the top of the support ring;

[0031] a flow control ring, supported by the support ring on the top of the support ring, and forming an exhaust port of the exhaust channel together with the exhaust ring;

[0032] The second positioning and adjusting module is arranged on the top of the support ring and is used to adjust the concentricity of the support ring, the exhaust ring and the flow control ring, and to adjust the concentricity of the exhaust assembly and the upper electrode assembly.

[0033] Optionally, in the above semiconductor process chamber, the second positioning adjustment module includes:

[0034] The limiting member includes: a connecting block for connecting to the support ring; a limiting plate connected to the connecting block and for abutting against the exhaust ring; and a limiting block connected to the limiting plate and for abutting against the flow control ring.

[0035] An adjustment assembly connects the support ring and the limit member and is capable of adjusting the radial spacing between the support ring and the limit member to change the concentricity of the exhaust ring and the support ring and / or change the concentricity of the flow control ring and the support ring through the limit member.

[0036] Optionally, in the above-mentioned semiconductor process chamber, a plurality of second positioning and adjustment modules are provided on the circumference of the support ring.

[0037] Optionally, in the above-mentioned semiconductor process chamber, the flow control rings include a plurality of flow control rings with different thicknesses, and each of the flow control rings cooperates with the exhaust ring to form exhaust ports of different sizes.

[0038] Optionally, in the above-mentioned semiconductor process chamber, under the support of the support ring, the exhaust ring extends into the space surrounded by the gas shower head, the RF isolation ring, the carrier and the cavity body of the semiconductor process chamber, and there is a gap between the exhaust ring and the RF isolation ring and the gas shower head to guide the inert gas introduced into the gas guide channel to the exhaust port of the exhaust channel.

[0039] A semiconductor process equipment comprises a radio frequency source for generating radio frequency energy and the above-mentioned semiconductor process chamber.

[0040] Optionally, in the above-mentioned semiconductor process equipment, the semiconductor process equipment includes a plurality of the semiconductor process chambers, and each of the semiconductor process chambers is provided with an upper electrode assembly, an exhaust assembly, a lower electrode assembly, and a radio frequency source connected thereto, wherein:

[0041] The RF source is used to feed the RF energy generated by the RF source into the semiconductor process chamber, and the RF source has two feeding points in each of the semiconductor process chambers, and the angle formed by the line connecting the two feeding points and the center of the semiconductor process chamber is 180 degrees;

[0042] and / or,

[0043] The carrier is a plate-shaped member with two accommodating holes. The two accommodating holes are respectively located in two semiconductor process chambers, and the radio frequency sources of the two semiconductor process chambers are mirror-imaged.

[0044] The upper electrode assembly provided by the present application realizes the assembly of the upper electrode assembly and the semiconductor process chamber by fixing the carrier on the cavity body of the semiconductor process chamber and carrying the RF isolation ring and the gas shower head on the carrier, and the upper electrode assembly also includes a first positioning and adjustment module. When the fixing part of the first positioning and adjustment module is set on the carrier, the RF energy at its position is blocked by the RF isolation ring, so the installation of the fixing part will not affect the RF energy in the RF field, thereby improving the generation quality of the thin film; one end of the clamping part of the first positioning and adjustment module is connected to the fixing part, and the other end extends toward the center direction of the RF isolation ring and thus extends into the RF field, and the clamping part can cooperate with the carrier to clamp the RF isolation ring and the gas shower head to achieve opposite radiation. The positioning of the RF isolation ring and the gas shower head adopts a clamping and pressing positioning method instead of the bolt locking positioning method in the prior art, so there is no need to set bolts in the RF field, avoiding energy crosstalk in the RF field caused by the setting of bolts, and further improving the quality of film generation; at the same time, the first positioning adjustment module also includes an adjustment mechanism, which can adjust the position of the gas shower head in the radial direction. Even if the upper electrode assembly is not concentric due to processing errors or movement and expansion of the gas shower head and the RF isolation ring under high-temperature process, the gas shower head can be radially moved to a position concentric with the RF isolation ring by operating the adjustment mechanism, so that the upper electrode assembly can continue to maintain a high degree of concentricity, thereby further improving the quality of film generation. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are merely embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without any creative work.

[0046] Figure 1 A cross-sectional view of a portion of the structure of a semiconductor process equipment provided in an embodiment of the present application;

[0047] Figure 2 for Figure 1 Enlarged view of part A;

[0048] Figure 3 is a structural diagram of a bearing member;

[0049] Figure 4 This is a schematic diagram of the structure of the air guide channel after the carrier is cut;

[0050] Figure 5 A schematic structural diagram of the first positioning and adjustment module;

[0051] Figure 6 is a cross-sectional view of the first positioning and adjusting module;

[0052] Figure 7 It is a structural diagram of the circumferential arrangement of the first positioning adjustment module and the positioning module;

[0053] Figure 8 for Figure 1 Enlarged view of part B;

[0054] Figure 9 is a structural diagram of the second positioning and adjustment module;

[0055] Figure 10 This is a schematic diagram of the structure of the circumferential arrangement of the second positioning and adjustment modules;

[0056] Figure 11 Schematic diagram of the distribution of RF sources in two adjacent semiconductor process chambers.

[0057] exist Figures 1-11 middle:

[0058] 1-semiconductor process chamber, 2-carrier, 3-accommodating hole, 4-RF isolation ring, 5-gas shower head, 6-first positioning and adjustment module, 7-gas guide channel, 8-positioning module, 9-insulating air inlet block, 10-RF shielding cover, 11-metal air inlet block, 12-support ring, 13-exhaust ring, 14-flow control ring, 15-second positioning and adjustment module, 16-RF source, 17-heating base, 18-thrust pin, 19-adjustment plate, 20-cavity, 21-connecting strip.

[0059] 401-cylindrical part, 402-first flange part;

[0060] 501-main body, 502-second flange;

[0061] 601-fixing member, 602-pressing member, 603-first through hole, 604-first threaded hole, 605-pressing bolt, 606-second through hole, 607-moving member, 608-second threaded hole, 609-third threaded hole, 610-adjusting member, 611-insulating pad;

[0062] 6071- push rod;

[0063] 701-annular channel, 702-air guide hole, 703-introduction channel, 704-air inlet hole;

[0064] 1301-exhaust channel, 1302-exhaust port;

[0065] 1501-limiting piece, 1502-adjusting sleeve, 1503-fourth threaded hole, 1504-adjusting bolt, 1505-fifth threaded hole;

[0066] 15011-connecting block, 15012-limiting plate, 15013-limiting block;

[0067] 15041-first screw part, 15042-second screw part. DETAILED DESCRIPTION

[0068] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0069] In existing PEALD process equipment, the upper electrode assembly may be non-concentric due to processing errors or the movement and expansion of the components under high-temperature processes, which will affect the film quality. In addition, the current upper electrode assembly is assembled in a fixed manner, and it is impossible to adjust the concentricity between the components, resulting in unsatisfactory film quality. Moreover, the current upper electrode assembly uses bolts to achieve fixed assembly of its components (such as gas shower heads) located in the RF field. This assembly method will cause crosstalk of energy in the RF field due to the presence of bolts, which will also affect the film quality.

[0070] In view of the above situation in the prior art, Figures 1-11 As shown, the embodiment of the present application provides a novel upper electrode assembly, which is applied to semiconductor process equipment suitable for performing PEALD process. The upper electrode assembly mainly includes a carrier 2, an RF isolation ring 4, a gas shower head 5 and a first positioning adjustment module 6, wherein:

[0071] The carrier 2 is the basic component for assembling the upper electrode assembly in the semiconductor process chamber 1, and is also the horizontal reference of the upper electrode assembly. The other components of the upper electrode assembly are all carried on the carrier 2. When assembled with the semiconductor process chamber 1, the carrier 2 is fixedly set on the cavity 20 that surrounds the semiconductor process chamber 1, and forms a sealed connection with the cavity 20 through a sealing ring. The part of this sealed connection is the part of the cavity 20 that surrounds the top opening, that is, the carrier 2 is set on the edge of the top opening of the semiconductor process chamber 1, and the upper electrode assembly provided in the present application can form the upper cover of the semiconductor process chamber 1, and the structure of the carrier 2 is, for example Figure 3 、 Figure 11As shown, the carrier 2 can be set as a plate-shaped member, and a receiving hole 3 is opened on the plate-shaped member. The receiving hole 3 is concentrically arranged with the top opening of the semiconductor process chamber 1, and the diameter of the receiving hole 3 can be close to the diameter of the top opening but smaller than the diameter of the top opening, thereby forming an annular boss protruding inward (i.e., toward the center of the semiconductor process chamber 1) in the semiconductor process chamber 1, so that the RF isolation ring 4 and the gas shower head 5 can be arranged on the annular boss, and the carrier 2 can carry and support the RF isolation ring 4 and the gas shower head 5;

[0072] The RF isolation ring 4 is a component that isolates RF in the semiconductor process chamber 1. It mainly plays an insulating role. During assembly, the RF isolation ring 4 is first set on the annular boss. At least a portion of the RF isolation ring 4 set on the annular boss is located in the accommodating hole 3. In this way, the RF isolation ring 4 can be located on the inner side of the annular boss in the radial direction (since there are multiple cylindrical, annular or disc-shaped components such as the semiconductor process chamber 1, the RF isolation ring 4, the gas shower head 5 and the support ring 12, the exhaust ring 13, the flow control ring 14, the wafer, the heating base 17 and the adjustment plate 19 described later in this application, and these components all have concentricity requirements, so the "radial" and "axial" mentioned in this application can be the radial and axial directions of any of these components), thereby blocking the RF energy from being directed away from its setting position (or the setting position of the carrier 2), thereby preventing the carrier 2 from being affected by the RF energy;

[0073] The gas shower head 5 is a component for introducing process gases, precursors, etc. into the semiconductor process chamber 1. It is also the initial position for applying RF energy, that is, it is also used to feed RF energy into the semiconductor process chamber 1. One end of the assembled gas shower head 5 is connected to the outside of the semiconductor process chamber 1 through the insulating gas inlet block 9 and the metal gas inlet block 11 described later, and the other end is located in the semiconductor process chamber 1 and has a plurality of evenly distributed small holes. The process gas and plasma can pass through the small holes and be evenly distributed in the reaction area. During the assembly process, the gas shower head 5 is passed through the annular cavity of the RF isolation ring 4. That is, the gas shower head 5, the RF isolation ring 4 and the carrier 2 are arranged in sequence from the inside to the outside in the radial direction. Since the gas shower head 5 needs to have a floating potential, the gas shower head 5 is carried on the RF isolation ring 4, specifically, it is arranged above the RF isolation ring 4, so as to realize indirect support of the gas shower head 5 on the carrier 2;

[0074] The first positioning and adjusting module 6 is used to adjust the concentricity of the gas shower head 5 and the radio frequency isolation ring 4 and to position them on the carrier 2 after the adjustment is completed. Figure 1 and Figure 2As shown, the first positioning and adjusting module 6 comprises a fixing member 601, a pressing member 602 and an adjusting mechanism. The fixing member 601 is arranged on the carrier 2 and located outside the RF isolating ring 4. Since the RF isolating ring 4 isolates the RF field, the fixing member 601 arranged on the carrier 2 and located outside the RF isolating ring 4 is not located in the RF field. Neither the fixing member 601 itself nor the connecting mode of the fixing member 601 on the carrier 2 will affect the RF energy. The pressing member 602 is connected to the fixing member 601. Specifically, one end of the pressing member 602 is connected to the fixing member 601, and the other end extends to the center of the RF isolating ring 4 and extends into the RF field. The part of the pressing member 602 located in the RF field can press the gas shower head 5 and the RF isolating ring 4 in the RF field, so as to clamp the gas shower head 5 and the RF isolating ring 4 together with the carrier 2, so that the gas shower head 5 and the RF isolating ring 4 can be clamped and positioned on the carrier 2. The adjusting mechanism is arranged on the fixing member 601. Since the fixing member 601 is located outside the RF field, most of the adjusting mechanism is also located outside the RF field. Even if part of the adjusting mechanism enters the RF field due to the radial movement of the gas shower head 5, the influence on the RF energy will be small (because the deviation range of concentricity is small, the distance that the gas shower head 5 needs to move radially is small, and thus the distance that the adjusting mechanism enters the RF field is also small). The adjusting mechanism can move the gas shower head 5 to the position concentric with the RF isolating ring 4 by pushing the gas shower head 5 radially, so that the upper electrode assembly can continuously maintain high-precision concentricity.

[0075] Specifically, in the above structure, in addition to the plate structure, the carrier 2 can also have other structures, for example, the carrier 2 is a plurality of carrier blocks, and a plurality of carrier blocks are arranged circumferentially at the top opening of the semiconductor process chamber 1 (this structure is not shown in the structure diagram). These carrier blocks surround the accommodating hole 3 and have a part extending into the inside of the semiconductor process chamber 1 to form a boss. In addition, in order to improve the structural strength and stability of work, as shown in Figure 2 、 Figure 5 and Figure 6 , the fixing member 601 and the pressing member 602 are arranged in a block structure. In addition, the fixing member 601 and the pressing member 602 can also have other structures, for example, a plate structure, a columnar structure, etc. In order to simplify the structure, reduce the number of parts, and reduce the assembly complexity, the fixing member 601 and the pressing member 602 are also integrated structures, for example, the fixing member 601 and the pressing member 602 are integrally cast structures or integrally machined structures.

[0076] When the above-mentioned upper electrode assembly is assembled with the semiconductor process chamber 1, the carrier 2 is first fixedly installed at the top opening of the semiconductor process chamber 1, and then the RF isolation ring 4 is installed on the carrier 2 and located in the accommodating hole 3, and then the gas shower head 5 is passed through the RF isolation ring 4 and installed on the RF isolation ring 4 and / or the carrier 2, and then the first positioning adjustment module 6 is installed on the carrier 2; when the concentricity needs to be adjusted, the clamping member 602 is kept in a state of releasing the pressure on the gas shower head 5 and the RF isolation ring 4, and then the adjustment mechanism is operated to enable the adjustment mechanism to push the gas shower head 5 to move to a position concentric with the RF isolation ring 4, and finally the clamping member 602 is switched to a state of clamping the gas shower head 5 and the RF isolation ring 4 with the carrier 2, thereby realizing the positioning of the gas shower head 5 and the RF isolation ring 4 in the concentric position. Among them, since the fixing part 601 connecting the positioning component (i.e., the pressing part 602) is set outside the RF field, the pressing part 602 is used to realize the compression positioning of the gas shower head 5 and the RF isolation ring 4 in the RF field (avoiding the use of bolts), and a first positioning adjustment module 6 is added to adjust the concentricity of the gas shower head 5 and the RF isolation ring 4 in real time, it is possible to achieve a triple improvement in the film formation quality, so that the consistency and stability of the thin film deposition are better, the improvement effect is very significant, and it also saves production costs.

[0077] In the upper electrode assembly provided in this application, based on the first positioning adjustment module 6, as shown in FIG. Figure 7 As shown, it can further include a positioning module 8 for positioning the RF isolation ring 4 and the gas shower head 5, and the positioning module 8 includes a fixing part 601 and a pressing part 602. During the thin film deposition process, in order to obtain a thin film with good performance, it is necessary to keep the gas shower head 5 and the RF isolation ring 4 precisely concentric at all times. In order to more stably ensure the concentric effect, the present application not only allows the first positioning and adjustment module 6 to position the RF isolation ring 4 and the gas shower head 5, but also adds a positioning module 8 specifically for positioning the RF isolation ring 4 and the gas shower head 5. In order to simplify the structure and reduce the difficulty of processing, manufacturing and assembly of components, the positioning module 8 can adopt a structure similar to that of the first positioning and adjustment module 6, that is, the adjustment mechanism of the first positioning and adjustment module 6 is cancelled, and the fixing part 601 and the pressing part 602 are retained, so that the fixing module has the same installation method and positioning method as the first positioning and adjustment module 6. In this way, the influence of the positioning module 8 on the RF energy can be avoided, and the manufacturing cost of the upper electrode assembly can be saved. Of course, without considering the above factors, the structure of the positioning module 8 can also be completely different from that of the first positioning and adjustment module 6.

[0078] Further, such as Figure 7As shown, multiple first positioning and adjustment modules 6 and positioning modules 8 are provided in the circumferential direction of the accommodating hole 3 , and the first positioning and adjustment modules 6 and positioning modules 8 are alternately provided in the circumferential direction of the accommodating hole 3 . Specifically, by providing multiple first positioning and adjustment modules 6 along the circumference of the accommodating hole 3, the gas shower head 5 can be adjusted in multiple directions along the entire circumference, thereby coping with a wider range of eccentricity situations. During specific adjustment, for example, when the gas shower head 5 needs to be moved to the left, all the first positioning and adjustment modules 6 and all the positioning modules 8 are first released from the pressure and positioning of the gas shower head 5. Then, the first positioning and adjustment module 6 located on the left side of the gas shower head 5 is operated to separate the adjustment mechanism on the left first positioning and adjustment module 6 from the gas shower head 5, thereby providing space for the gas shower head 5 to move to the left. Then, the first positioning and adjustment module 6 located on the right side of the gas shower head 5 is operated to cause the adjustment mechanism on the right first positioning and adjustment module 6 to push the gas shower head 5 to move to the left. When the gas shower head 5 is in place, the adjustment mechanism on the left side also abuts against the gas shower head 5 (but does not push the gas shower head 5 to move to the right; this step can also be omitted). Finally, all the first positioning and adjustment modules 6 and all the positioning modules 8 are used to press and position the gas shower head 5. Of course, in the special case where the gas shower head 5 can only deflect in one direction, only one first positioning adjustment module 6 for reverse adjustment can be provided. A plurality of positioning modules 8 arranged circumferentially can further realize the positioning of the gas shower head 5 in an all-round manner. In the preferred arrangement, as Figure 7 As shown, four first positioning and adjustment modules 6 are arranged at equal intervals in the circumferential direction of the accommodating hole 3, and four positioning modules 8 are also arranged at equal intervals, and the first positioning and adjustment modules 6 and the positioning modules 8 are arranged alternately in the circumferential direction, that is, both sides of the circumferential direction of each first positioning and adjustment module 6 are provided with positioning modules 8, and both sides of the circumferential direction of each positioning module 8 are provided with first positioning and adjustment modules 6. In this way, the adjustment effect and the positioning effect can be better taken into account, not only can the gas shower head 5 be adjusted more comprehensively in multiple directions, but also the force on the gas shower head 5 can be more balanced and the positioning can be more stable.

[0079] In an optional embodiment, the fixing member 601 is movably and / or rotationally connected to the carrier 2 and drives the pressing member 602 to move and / or rotate back and forth to achieve positioning and release of the RF isolation ring 4 and the gas shower head 5. That is to say, based on the above structure, the positioning and release of the RF isolation ring 4 and the gas shower head 5 can be achieved in a variety of ways. For example, the fixing part 601 and the pressing part 602 can be synchronously moved axially relative to the carrier 2, the RF isolation ring 4 and the gas shower head 5 to approach and move away from the gas shower head 5 to achieve compression and separation, or the fixing part 601 and the pressing part 602 can be synchronously rotated relative to the carrier 2, the RF isolation ring 4 and the gas shower head 5 with the connection axis of the fixing part 601 and the carrier 2 as the center to approach and move away from the gas shower head 5 to achieve compression and separation, or the pressing part 602 can be axially moved and rotated on the fixing part 601 to achieve compression and separation of the gas shower head 5. Among them, considering the simplicity of structure, convenience of operation and reliability of switching, the fixing part 601 and the pressing part 602 are synchronously moved axially relative to the carrier 2, the RF isolation ring 4 and the gas shower head 5 to approach and move away from the gas shower head 5 as the preferred positioning and release operation method.

[0080] Specifically, in order to realize the operation mode of positioning and releasing the positioning of the gas shower head 5 by synchronously moving the fixing member 601 and the pressing member 602 in the axial direction, as shown in FIG. Figure 2As shown, the fixing member 601 has a first through hole 603 arranged along the axial direction of the RF isolation ring 4, and the carrier 2 has a first threaded hole 604 arranged along the axial direction of the RF isolation ring 4. The clamping bolt 605 passing through the first through hole 603 changes the depth of being screwed into the first threaded hole 604, so that the clamping member 602 can tighten or loosen the RF isolation ring 4 and the gas shower head 5. In this structure, the fixing member 601 is erected axially on the carrier 2, the clamping member 602 is connected to the top of the fixing member 601 and is located above the RF isolation ring 4 and the gas shower head 5, and the fixing member 601 is provided with a first through hole 603 passing axially for the clamping bolt 605 to pass through. At the same time, a first threaded hole 604 is opened axially at the portion of the carrier 2 for setting the fixing member 601, and the clamping bolt 605 passing through the first through hole 603 can be screwed into the first threaded hole 604 and engage with the first threaded hole 604. A threaded hole 604 is threadedly connected. As the clamping bolt 605 penetrates into the first threaded hole 604, the clamping bolt 605 can drive the fixing member 601 and the clamping member 602 thereon to approach the carrier 2, the RF isolation ring 4 and the gas shower head 5, and finally the clamping member 602 compresses the gas shower head 5. As the clamping bolt 605 is gradually screwed out of the first threaded hole 604, the fixing member 601 and the clamping member 602 can move upward slightly, loosening the gas shower head 5, eliminating the clamping force and releasing the positioning. In addition, other structures can also be used to achieve the above-mentioned tightening and loosening. For example, the fixing member 601 is fixedly set on the carrier 2, and the fixing member 601 does not move relative to the carrier 2, while the clamping member 602 moves axially on the fixing member 601 through a mechanism such as a guide rail slider, so that the tightening and loosening of the gas shower head 5 is achieved only by the up and down movement of the clamping member 602.

[0081] In an optional embodiment, if Figure 5 and Figure 6As shown, the adjustment mechanism includes: a second through hole 606, which is arranged on the fixing member 601 along the radial direction of the RF isolation ring 4; a movable member 607, one end of which extends into the second through hole 606 and can move in the second through hole 606, and the other end is located on the side of the fixing member 601 away from the RF isolation ring 4 and has a second threaded hole 608; a third threaded hole 609, which is arranged on the fixing member 601 along the radial direction of the RF isolation ring 4, and the thread direction is opposite to the thread direction of the second threaded hole 608; an adjusting member 610, which has a screw portion that is threadedly engaged with the second threaded hole 608 and the third threaded hole 609. The movable member 607 is a component that contacts the gas shower head 5 and pushes the gas shower head 5 to move radially. The pushing portion thereof may be a push rod 6071. In order to improve the movement stability and increase the contact area with the gas shower head 5, two push rods 6071 may be arranged in parallel, so that the entire movable member 607 forms a concave structure. The second threaded hole 608 may be provided at a portion of the concave structure opposite to the opening, so that the adjusting member 610 passes through the movable member 607 from this portion. The third threaded hole 609 provided on the fixing member 601 is coaxially arranged with the second threaded hole 608. The spiral directions of the threads in the two threaded holes are opposite. The adjusting member 610 may be a knob bolt for easy manual operation. The screw portion of the knob bolt extends into the third threaded hole 609 after passing through the second threaded hole 608. When the concentricity between the gas shower head 5 and the RF isolation ring 4 needs to be adjusted, since the push rod 6071 and the knob bolt are both radially arranged relative to the gas shower head 5, when the knob bolt is rotated, the push rod 6071 will move forward or backward in the second through hole 606. Specifically, when the knob bolt is rotated forward to unscrew the screw portion from the third threaded hole 609, since the thread directions of the third threaded hole 609 and the second threaded hole 608 are opposite, the moving part 607 is driven by the screw portion to approach the fixed part 601, thereby causing the push rod 6071 to move forward or backward in the second through hole 606. The moving rod 6071 moves forward, pushing the gas shower head 5 toward the center of the RF isolation ring 4 until concentricity is achieved. When the knob bolt is rotated in the opposite direction and its screw portion penetrates into the third threaded hole 609, the movable member 607 is driven away from the fixed member 601 by the screw portion, thereby causing the push rod 6071 to retreat away from the center of the RF isolation ring 4 until it is separated from the gas shower head 5 and a certain gap is left between the gas shower head 5 and the gas shower head 5, so that the gas shower head 5 can be moved under the push of the opposite adjustment mechanism. Based on the real-time concentricity of the gas shower head 5, the adjustment mechanisms of the multiple first positioning adjustment modules 6 in the circumferential direction of the accommodating hole 3 can be coordinated to enable the gas shower head 5 to move more quickly and accurately to a position concentric with the RF isolation ring 4.

[0082] Further, such as Figure 2 、 Figure 5 and Figure 6As shown, the first positioning and adjustment module 6 also includes an insulating pad 611 arranged on the fixing member 601 and the pressing member 602, and used to contact the RF isolation ring 4 and the gas shower head 5. The function of this insulating pad 611 is to achieve insulation between the fixing member 601, the pressing member 602 and the gas shower head 5, and the RF isolation ring 4, and to block the RF energy, thereby preventing the RF energy from being abnormally discharged from the position where the first positioning and adjustment module 6 is set into the semiconductor process chamber 1. Specifically, the insulating pad 611 is an L-shaped structure that matches the combined structural shape of the fixing member 601 and the pressing member 602, and the edge of the insulating pad 611 has a edging that wraps the fixing member 601 and the pressing member 602, as shown in FIG. Figure 5 In addition, in order to better block the radio frequency energy, the positioning module 8 also includes the same (same includes the same structure, the same material and the same connection method) insulating pad 611, so that the radio frequency energy cannot be abnormally discharged from the setting position of the positioning module 8.

[0083] In an optional embodiment, if Figure 2As shown, the assembly and matching structure of the carrier 2, the RF isolation ring 4 and the gas shower head 5 is as follows: the RF isolation ring 4 includes a cylindrical portion 401 and a first flange portion 402, the cylindrical portion 401 is located in the accommodating hole 3, the first flange portion 402 is arranged at the top of the cylindrical portion 401, and protrudes radially outward relative to the cylindrical portion 401; the gas shower head 5 includes a main body portion 501 and a second flange portion 502, the main body portion 501 passes through the accommodating hole 3 (the main body portion 501 is the other part of the gas shower head 5 except the second flange portion 502), the second flange portion 502 is arranged at the top of the main body portion 501, and protrudes radially outward relative to the main body portion 501; wherein the first flange portion 402 overlaps the edge of the accommodating hole 3 to realize the carrier 2 to support the RF isolation ring 4; the second flange portion 502 overlaps the first flange portion 402 to realize the carrier 2 to support the gas shower head 5. The RF isolation ring 4 having a first flange portion 402 and a cylindrical portion 401 is similar to a flange structure, which can enable the first flange portion 402 protruding outward to overlap on the edge of the accommodating hole 3, thereby realizing suspension on the carrier 2. At the same time, in order to ensure the isolation effect of RF energy, it needs to have a cylindrical portion 401 located in the accommodating hole 3, and preferably the axial length of the cylindrical portion 401 is greater than or equal to the depth of the accommodating hole 3 (the depth of the accommodating hole 3 is the thickness of the plate-shaped carrier 2). The same principle also enables the gas shower head 5 to have a second flange portion 502 protruding outward. By overlapping the second flange portion 502 on the first flange portion 402, the gas shower head 5 can be suspended on the RF isolation ring 4, thereby realizing the stacking of the RF isolation ring 4 and the gas shower head 5 on the carrier 2 in sequence. This structure is not only simple in structure, but also convenient for assembling the carrier 2, the RF isolation ring 4 and the gas spray part, and can also cooperate with the pressing part 602 to facilitate the compression and positioning of the pressing part 602, so this cooperation structure is regarded as the preferred structure of this application. In addition, the assembly of the carrier 2, the RF isolation ring 4 and the gas spray part can also be achieved in other ways, such as setting the accommodating hole 3 as a conical hole (large top opening, small bottom opening), setting the RF isolation ring 4 as a conical ring (large top opening, small bottom opening), and the gas spray head 5 still has a flange protruding outward, and the outer conical surface of the RF isolation ring 4 is fitted with the conical side of the accommodating hole 3 to achieve the support of the RF isolation ring 4 by the carrier 2. The gas spray head 5 still adopts the above-mentioned overlap method, but is directly overlapped on the carrier 2. In this way, the assembly of the carrier 2, the RF isolation ring 4 and the gas spray part can also be achieved, and the concentric adjustment and compression positioning are not affected.

[0084] like Figure 1As shown, based on the above structure, the upper electrode assembly provided by the present application further includes: an insulating gas inlet block 9, which is disposed at the gas inlet end of the gas shower head 5 and is in communication with the gas shower head 5 for introducing gas into the gas shower head 5; an RF shielding cover 10, which is passed through the insulating gas inlet block 9 and is sealed to the insulating gas inlet block 9, and the edge of the cover is connected to the carrier 2 to achieve the sealing of the semiconductor process chamber 1 and prevent the escape of RF energy from the semiconductor process chamber 1; a metal gas inlet block 11, which is connected to the insulating gas inlet block 9 and is in communication with the insulating gas inlet block 9 and is located outside the RF shielding cover 10. The metal gas inlet block 11 is the initial gas inlet end of the upper electrode assembly and can be made of aluminum; the insulating gas inlet block 9 is in communication with the metal gas inlet block 11 to serve as an inlet channel for process gas and plasma, and is also used to block the discharge of RF energy from the gas inlet position, and can be made of ceramic. The function of the RF shielding cover 10 is to prevent the escape of RF energy within the semiconductor process chamber 1 and avoid RF energy crosstalk between adjacent semiconductor process chambers 1.

[0085] In an optional embodiment, if Figure 2-Figure 4 As shown, the carrier 2 is provided with a gas guide channel 7 for guiding the inert gas. The inert gas introduced into the semiconductor process chamber 1 by the gas guide channel 7 is blown toward the exhaust port 1302 of the semiconductor process chamber 1 under the guidance of the RF isolation ring 4 and the gas shower head 5. Figure 2 As shown by the dotted arrow in . The present application also makes further improvements to the carrier 2, that is, a gas guide channel 7 is provided on the carrier 2 for guiding the inert gas into the semiconductor process chamber 1. The reason for guiding the inert gas into the semiconductor process chamber 1 is that during the process, parasitic plasma is prone to appear in the gap between the upper electrode assembly and the cavity 20 that encloses the semiconductor process chamber 1 and cannot be discharged, affecting the processing efficiency of the plasma. The gas guide channel 7 is opened on the carrier 2, and the inert gas is introduced into the semiconductor process chamber 1. The inert gas is guided to the exhaust port 1302 of the semiconductor process chamber 1 by the RF isolation ring 4 and the gas shower head 5 in the semiconductor process chamber 1, which can avoid abnormal discharge and plasma aggregation near the above-mentioned gap outside the reaction area, and also avoid the infiltration of external gas, and prevent the chemical source that is easy to react with air from reacting at the gap to produce particles that cannot be eliminated.

[0086] Specifically, such as Figure 4As shown, the air guide channel 7 includes: an annular channel 701, which is arranged around the accommodating hole 3; an air guide hole 702, which connects the annular channel 701 and the accommodating hole 3, and is evenly arranged in multiple numbers in the circumferential direction of the accommodating hole 3; an inlet channel 703, which is connected to the annular channel 701 and forms an air inlet hole 704 on the surface of the carrier 2. Among them, the inert gas enters the introduction channel 703 from the air inlet hole 704, enters the annular channel 701 through the diversion of the introduction channel 703, and fills the annular channel 701. Since the annular channel 701 is arranged around the accommodating hole 3, the inert gas can be distributed at various parts in the circumferential direction of the accommodating hole 3, and enters the accommodating hole 3 evenly through multiple air guide holes 702 that are connected to the annular channel 701 and evenly distributed in the circumferential direction, so that the gas shower head 5 and the exhaust ring 13 described later are always filled with inert gas during the process, thereby avoiding abnormal discharge and plasma accumulation near the gap. At the same time, it can also ensure that external gas cannot penetrate, and avoid chemical sources that are easily reactive with air from reacting here to produce particles that cannot be removed and affect the final film quality.

[0087] In addition, an embodiment of the present application further provides a semiconductor process chamber 1, which includes the above-mentioned upper electrode assembly.

[0088] In addition, the semiconductor process chamber 1 also includes a lower electrode assembly, which includes: a heating base 17 constituting a lower electrode, which is used to provide support for the wafer and the required process temperature; a pin 18 (or pin needle) supporting the heating base 17, the pin 18 passes through the heating base 17, and the heating base 17 can be raised and lowered on the pin 18. When the heating base 17 is in its original position, the robot can quickly place the wafer on the pin 18. During the process, the heating base 17 will rise on the pin 18 to make the wafer fit the heating base 17; the pin 18 is arranged on an adjustment plate 19, which is arranged at the bottom of the semiconductor process chamber 1, and a plurality of leveling bolts are arranged on the circumference of the adjustment plate 19. By raising and lowering the leveling bolts at different positions, the leveling of the adjustment plate 19 can be achieved, thereby leveling the pin 18 on the adjustment plate 19 and the heating base 17 on the pin 18.

[0089] like Figure 1 as well as Figures 8-10As shown, the semiconductor process chamber 1 also includes an exhaust assembly arranged in the semiconductor process chamber 1 and located at the bottom of the upper electrode assembly, and the exhaust assembly includes: a support ring 12, which is arranged in the semiconductor process chamber 1 and surrounds the outer side of the lower electrode assembly of the semiconductor process chamber 1; an exhaust ring 13, which has an exhaust channel 1301 and is supported by the support ring 12 at the top of the support ring 12; a flow control ring 14, which is supported by the support ring 12 at the top of the support ring 12 and forms an exhaust port 1302 of the exhaust channel 1301 with the exhaust ring 13; a second positioning adjustment module 15, which is arranged at the top of the support ring 12 and is used to adjust the concentricity of the support ring 12, the exhaust ring 13 and the flow control ring 14, as well as adjust the concentricity of the exhaust assembly and the upper electrode assembly. The exhaust ring 13 is used to form an exhaust channel 1301 to exhaust reaction waste gases and byproducts from the semiconductor process chamber 1. The flow control ring 14 can adjust the size of the exhaust port 1302 of the exhaust channel 1301, thereby adjusting the exhaust flow rate of reaction waste gases and byproducts. The support ring 12 is used to support the exhaust ring 13 and the flow control ring 14, so that the exhaust ring 13 is positioned close to the gas showerhead 5. In addition, the support ring 12, the flow control ring 14, and the exhaust ring 13 all surround the outer side of the lower electrode assembly and have a radial gap with the heating base 17. On this basis, the semiconductor process chamber 1 provided by the present application also adds a second positioning adjustment module 15. This module can avoid the influence of processing errors and the possible movement and expansion of components during high-temperature processing, ensure that the exhaust ring 13, the flow control ring 14, and the support ring 12 are highly concentric, and the radial gap between them and the heating base 17 is uniform at all locations along the circumference of the heating base 17, thereby ensuring a more stable airflow field in the semiconductor process chamber 1 during process operation. Moreover, the second positioning and adjustment module 15 can coordinately achieve high concentricity with the upper electrode assembly by adjusting the concentricity of the exhaust ring 13, the flow control ring 14, and the support ring 12, thereby ensuring high concentricity of the entire reaction area, ensuring the stability of the airflow field and the plasma field, and ensuring the quality of the film.

[0090] Specifically, such as Figure 8 and Figure 9As shown, the second positioning adjusting module 15 comprises a limiting piece 1501, which comprises a connecting block 15011 for connecting with the support ring 12, the connecting block 15011 being provided with a fourth threaded hole 1503; a limiting plate 15012 connected to the connecting block 15011 and used for abutting against the exhaust ring 13; a limiting block 15013 connected to the limiting plate 15012 and used for abutting against the flow control ring 14; and an adjusting assembly connected between the support ring 12 and the limiting piece 1501 and capable of adjusting the radial distance between the support ring 12 and the limiting piece 1501, so as to change the concentricity between the exhaust ring 13 and the support ring 12 and / or change the concentricity between the flow control ring 14 and the support ring 12 through the limiting piece 1501. Specifically, the adjusting assembly comprises an adjusting sleeve 1502, which is provided with an external thread on an outer circumferential wall and an internal thread on an inner circumferential wall, and is connected to the fourth threaded hole 1503 through the external thread; and an adjusting bolt 1504, which is arranged in the adjusting sleeve 1502 and comprises a first screw rod portion 15041 and a second screw rod portion 15042 coaxially connected to the first screw rod portion 15041, the second screw rod portion 15042 having a smaller pitch than the first screw rod portion 15041 and a smaller diameter than the first screw rod portion 15041 to avoid interference between the thread on the second screw rod portion 15042 and the internal thread. The first screw rod portion 15041 is threadedly connected with the internal thread, and the second screw rod portion 15042 is threadedly connected with a fifth threaded hole 1505 arranged on the support ring 12. In this structure, the limiting piece 1501 is a basic component of the second positioning adjusting module 15, the adjusting sleeve 1502 and the adjusting bolt 1504 are arranged on the limiting piece 1501, and the limiting piece 1501 comprises the limiting plate 15012 cooperating with the exhaust ring 13, the limiting block 15013 cooperating with the flow control ring 14, and the connecting block 15011 cooperating with the support ring 12. The adjusting sleeve 1502 is connected with the limiting piece 1501 by being threadedly connected with the fourth threaded hole 1503 on the connecting block 15011, the first screw rod portion 15041 of the adjusting bolt 1504 is threadedly connected with the adjusting sleeve 1502 by cooperating with the internal thread, and the second positioning adjusting module 15 is connected with the support ring 12 by screwing the second screw rod portion 15042 of the adjusting bolt 1504 into the fifth threaded hole 1505 arranged on the support ring 12.During assembly, the adjusting bolt 1504 is first passed through the adjusting sleeve 1502, specifically, the first screw portion 15041 is connected to the internal thread of the adjusting sleeve 1502 by screwing, and then the adjusting bolt 1504 is continued to be screwed so that the second screw portion 15042 enters the fifth threaded hole 1505 and is connected to the fifth threaded hole 1505. During the screwing process, since the pitch of the first screw portion 15041 is greater than the pitch of the second screw portion 15042, when the adjusting bolt 1504 rotates at the same angle, the axial distance moved by the adjusting sleeve 1502 on the first screw portion 15041 is greater than the distance the second screw portion 15042 penetrates into the fifth threaded hole 1505, so that the limiter 1501 can quickly abut against or move away from the exhaust ring 13, the flow control ring 14 and the support ring 12. When adjusting the concentricity of the exhaust ring 13, the flow control ring 14, and the support ring 12, the adjusting bolt 1504 is kept fixed, but the adjusting sleeve 1502 is rotated. By rotating the adjusting sleeve 1502, the axial movement on the adjusting bolt 1504 can be achieved through the internal thread cooperating with the adjusting bolt 1504. This axial movement specifically moves in the radial direction of the support ring 12, thereby driving the limit member 1501 to move in the radial direction of the support ring 12, so that the radial movement of the limit member 1501 can be used to push the exhaust ring 13 and the flow control ring 14 to move radially relative to the support ring 12, so as to adjust the solid concentricity; when the adjusting sleeve 1502 is not rotated, the second positioning adjustment module 15 realizes the positioning of the exhaust ring 13 and the flow control ring 14 through the threaded connection between the adjusting bolt 1504 and the fifth threaded hole 1505.

[0091] Furthermore, it is preferred that the spiral directions of the external thread and the internal thread of the adjusting sleeve 1502 are opposite. By such an arrangement, for example, when the adjusting sleeve 1502 is rotated away from the support ring 12, the limit member 1501 can be moved close to the support ring 12, thereby achieving fine adjustment of the distance between the limit member 1501 and the support ring 12.

[0092] In addition, a hexagonal countersunk hole is provided at the end of the adjusting sleeve 1502 to facilitate the screwing operation.

[0093] like Figure 10 As shown, multiple second positioning and adjustment modules 15 are also provided in the circumferential direction of the support ring 12, thereby enabling concentricity adjustment of the exhaust ring 13, the flow control ring 14, and the support ring 12 in multiple directions. Furthermore, when multiple second positioning and adjustment modules 15 are provided in the circumferential direction, they are distributed only within an angle range of 180 degrees in the circumferential direction, and the interval angle between adjacent ones is 90 degrees. In this way, while enabling precise concentricity adjustment of the exhaust ring 13, the flow control ring 14, and the support ring 12, the number of second positioning and adjustment modules 15 can be reduced, simplifying the structure of the semiconductor process chamber 1.

[0094] The flow control rings 14 include multiple flow control rings 14 of different thicknesses, and each flow control ring 14 cooperates with the exhaust ring 13 to form exhaust ports 1302 of different sizes. In other words, the size of the exhaust ports 1302 can be adjusted by replacing flow control rings 14 of different thicknesses.

[0095] In the prior art, the process gas flow area of ​​the semiconductor process chamber 1 is sealed by a sealing ring, which not only requires regular maintenance but also carries the risk of sealing ring failure, leading to radio frequency crosstalk between the two semiconductor process chambers 1. However, in the exhaust assembly of the semiconductor process chamber 1 provided in the present application, no sealing ring is provided between the exhaust ring 13, the flow control ring 14, and the support ring 12. This prevents corrosive gases from corroding the sealing ring or external gases from penetrating and generating particles at the sealing ring, thereby reducing maintenance costs and improving process operation stability.

[0096] Regarding the aforementioned inert gas introduction path, Figure 2 As shown, under the support of the support ring 12, the exhaust ring 13 extends into the space enclosed by the gas shower head 5, the RF isolation ring 4, the carrier 2 and the cavity 20 of the semiconductor process chamber 1, and there is a gap between the exhaust ring 13 and the RF isolation ring 4 and the gas shower head 5 to guide the inert gas introduced by the gas guide channel 7 to the exhaust port 1302 of the exhaust channel 1301, as shown in FIG. Figure 2 As shown by the dotted arrows in FIG. That is, after the inert gas enters the receiving hole 3, it flows sequentially along the gap between the exhaust ring 13 and the RF isolation ring 4, and the gap between the exhaust ring 13 and the gas shower head 5, to the exhaust port 1302 of the exhaust channel 1301. A gas curtain is formed at the exhaust port 1302 to isolate the reactive gas, thereby preventing abnormal discharge and plasma accumulation near the gap. This also prevents external gas from penetrating, preventing chemical sources that react easily with air from reacting here and generating particles that cannot be removed, thereby affecting the final film quality.

[0097] In addition, the embodiment of the present application also provides a semiconductor process equipment, which includes the semiconductor process chamber 1 described above, and also includes a radio frequency source for generating radio frequency energy, and the radio frequency source is arranged outside the semiconductor process chamber 1. Figure 11As shown, the semiconductor process equipment provided by the present application includes a plurality of semiconductor process chambers 1, and each semiconductor process chamber 1 is provided with an upper electrode assembly, an exhaust assembly, a lower electrode assembly and an RF source 16 connected thereto, wherein: the RF source 16 is used to feed the RF energy generated by the RF source into the semiconductor process chamber 1. In a specific setting, the RF source 16 has two feeding points in each semiconductor process chamber 1, and the angle formed by the line connecting the two feeding points and the center (or axis) of the semiconductor process chamber 1 is 180 degrees; and / or, the carrier 2 is a plate-shaped member with two accommodating holes 3, the two accommodating holes 3 are respectively located in two semiconductor process chambers 1, and the RF sources 16 of the two semiconductor process chambers 1 are mirror-imaged. In this structure, the RF source 16 feeds RF energy into the semiconductor process chamber 1. In order to avoid mutual crosstalk of the RF fields between multiple chambers, a RF shielding cover 10 is provided on the entire upper electrode assembly. The RF source 16 passes through the RF shielding cover 10 and feeds RF energy to the gas shower head 5, thereby realizing energy feeding. In order to further ensure the symmetry of energy feeding in the present application, the RF source 16 of each semiconductor process chamber 1 has two feeding points, and the two feeding points are symmetrically arranged 180° about the center of the semiconductor process chamber 1 inside the RF shielding cover 10. Specifically, the RF source 16 feeds RF energy into the semiconductor process chamber 1 through the connecting bar 21. The two ends of this connecting bar 21 are two feeding points. Since the connecting bar 21 is semicircular, the angle between its two ends is 180 degrees, and in the specific setting, the semicircular connecting bar 21 is also concentric with the semiconductor process chamber; at the same time, the carrier 2 is set to be plate-shaped, and it has two accommodating holes 3, each accommodating hole 3 is correspondingly arranged in a semiconductor process chamber 1, and each semiconductor process chamber 1 is provided with an RF source 16, and the RF sources 16 arranged in the two semiconductor process chambers 1 are mirrored, so that the energy crosstalk between the semiconductor process chambers 1 can be reduced.

[0098] The working process of the above-mentioned semiconductor process equipment is as follows: before entering the process, determine the process position height that the heating base 17 needs to be at in the atmospheric environment, and adjust the relative level of the ejector pin 18 and the heating base 17 through the adjustment plate 19; combine the corresponding finished product sizes of the semiconductor process chamber 1, the exhaust ring 13, the flow control ring 14 and the support ring 12, and at the same time, according to the temperature required for the process reaction, determine the maximum allowable eccentricity between the exhaust ring 13, the flow control ring 14 and the support ring 12, adjust the second positioning adjustment module 15, ensure that the exhaust ring 13, the flow control ring 14 and the support ring 12 are accurately concentric, and after achieving the expected adjustment, adjust the position according to the current concentricity. state, by rotating the adjustment part 610, the gas shower head 5 is pushed to move radially accordingly, so as to achieve precise concentricity of the upper electrode assembly, the wafer and the lower electrode assembly; then the heating base 17 is lowered to the wafer transfer position, and after the semiconductor process chamber 1 enters the vacuum environment, the heating base 17 begins to heat up and ensure the final process; after the robot places the wafer on the ejector pin 18, the heating base 17 begins to rise to the process position, and at the same time, the inert gas enters the reaction area through the carrier 2 to ensure that the gap between the gas shower head 5 and the exhaust ring 13 is filled with inert gas, and then the process gas is introduced into the semiconductor process chamber 1 to carry out the corresponding process reaction.

[0099] The basic principles of the present application have been described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, and effects mentioned in this application are merely illustrative and not restrictive, and it should not be assumed that these advantages, strengths, and effects are required of each embodiment of this application. In addition, the specific details disclosed above are merely illustrative and facilitating understanding, and are not restrictive. The above details do not limit this application to necessarily being implemented using the above specific details.

[0100] The block diagrams of the devices, devices, equipment, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As will be appreciated by those skilled in the art, these devices, devices, equipment, and systems can be connected, arranged, or configured in any manner. Words such as "include," "comprise," "have," and the like are open-ended words, meaning "including but not limited to," and can be used interchangeably therewith. The words "or" and "and" used herein refer to the words "and / or" and can be used interchangeably therewith, unless the context clearly indicates otherwise. The word "such as" used herein refers to the phrase "such as but not limited to," and can be used interchangeably therewith.

[0101] It should also be noted that in the apparatus, device, and method of the present application, each component or each step can be decomposed and / or recombined, and such decomposition and / or recombination should be regarded as equivalent solutions of the present application.

[0102] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present application. Therefore, the present application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0103] It should be understood that the qualifiers "first", "second", "third", "fourth", "fifth" and "sixth" used in the description of the embodiments of the present application are only used to more clearly illustrate the technical solutions and cannot be used to limit the scope of protection of the present application.

[0104] The above description has been provided for the purpose of illustration and description. Furthermore, this description is not intended to limit the embodiments of the present application to the forms disclosed herein. Although a number of example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. An upper electrode assembly, characterized in that: Used to be arranged in a semiconductor process chamber of a semiconductor process equipment, comprising: A carrier, fixedly arranged on the cavity of the semiconductor process chamber and provided with a receiving hole; a radio frequency isolation ring, carried by the carrier and at least partially located in the accommodating hole, for blocking radio frequency energy; a gas shower head, passing through the ring cavity of the radio frequency isolation ring and carried on the radio frequency isolation ring, and at least used for feeding radio frequency energy into the semiconductor process chamber; The first positioning and adjustment module includes: a fixing part, which is arranged on the supporting part and is located on the outside of the RF isolation ring; a pressing part, which is connected to the fixing part and extends toward the center direction of the RF isolation ring, and can cooperate with the supporting part to achieve clamping and positioning of the RF isolation ring and the gas shower head; an adjustment mechanism, which is arranged on the fixing part and can move radially along the RF isolation ring to push the gas shower head to move radially.

2. The upper electrode assembly according to claim 1, wherein: The carrier is provided with a gas guide channel for guiding the inert gas. The inert gas introduced into the semiconductor process chamber by the gas guide channel is blown toward the exhaust port of the semiconductor process chamber under the guidance of the RF isolation ring and the gas shower head.

3. The upper electrode assembly according to claim 1, wherein: It also includes a positioning module for positioning the RF isolation ring and the gas shower head. In the circumference of the accommodating hole, a plurality of the first positioning adjustment modules and the positioning modules are provided. Moreover, the first positioning adjustment modules and the positioning modules are alternately provided in the circumference of the accommodating hole.

4. The upper electrode assembly according to any one of claims 1 to 3, characterized in that: The fixing member is movably and / or rotatably connected to the bearing member, and drives the pressing member to reciprocate and / or rotate to achieve positioning and releasing of the radio frequency isolation ring and the gas shower head.

5. The upper electrode assembly according to claim 1, wherein: The regulating mechanism comprises: a second through hole, provided on the fixing member along the radial direction of the radio frequency isolation ring; a movable member, one end of which extends into the second through hole and is movable in the second through hole, and the other end of which is located on a side of the fixed member away from the RF isolation ring and is provided with a second threaded hole; a third threaded hole, provided on the fixing member along the radial direction of the RF isolation ring, and having a thread direction opposite to that of the second threaded hole; The adjusting member comprises a screw portion threadably matched with the second threaded hole and the third threaded hole.

6. The upper electrode assembly according to claim 1 or 5, characterized in that: The first positioning and adjusting module further includes an insulating pad which is arranged on the fixing member and the pressing member and is used to contact the radio frequency isolation ring and the gas shower head.

7. The upper electrode assembly according to claim 1, 2, 3 or 5, characterized in that: The RF isolation ring includes: a cylindrical portion located in the accommodating hole; a first flange portion provided at the top end of the cylindrical portion and protruding radially outward relative to the cylindrical portion; The gas shower head includes: a main body portion passing through the accommodating hole; a second flange portion provided at the top end of the main body portion and protruding radially outward relative to the main body portion; The first flange portion overlaps the edge of the accommodating hole to enable the carrier to support the RF isolation ring; the second flange portion overlaps the first flange portion to enable the carrier to support the gas shower head.

8. The upper electrode assembly according to claim 2, wherein: The air guide channel comprises: an annular channel, arranged around the accommodating hole; an air guide hole, communicating with the annular channel and the accommodating hole, and having a plurality of air guide holes evenly arranged in the circumference of the accommodating hole; An inlet channel is communicated with the annular channel, and an air inlet hole is formed on the surface of the supporting member.

9. A semiconductor process chamber, characterized in that: It comprises a cavity and an upper electrode assembly arranged on the cavity, and the upper electrode assembly is the upper electrode assembly according to any one of claims 1-8.

10. The semiconductor process chamber according to claim 9, wherein: Also included is an exhaust assembly disposed in the semiconductor process chamber, the exhaust assembly comprising: a support ring surrounding the outer side of the lower electrode assembly; an exhaust ring having an exhaust channel and supported by the support ring on the top of the support ring; a flow control ring, supported by the support ring on the top of the support ring, and forming an exhaust port of the exhaust channel together with the exhaust ring; The second positioning and adjusting module is arranged on the top of the support ring and is used to adjust the concentricity of the support ring, the exhaust ring and the flow control ring, and to adjust the concentricity of the exhaust assembly and the upper electrode assembly.

11. The semiconductor process chamber according to claim 10, wherein: The second positioning adjustment module includes: The limiting member includes: a connecting block for connecting to the support ring; a limiting plate connected to the connecting block and for abutting against the exhaust ring; and a limiting block connected to the limiting plate and for abutting against the flow control ring. An adjustment assembly connects the support ring and the limit member and is capable of adjusting the radial spacing between the support ring and the limit member to change the concentricity of the exhaust ring and the support ring and / or change the concentricity of the flow control ring and the support ring through the limit member.

12. The semiconductor process chamber according to claim 10 or 11, characterized in that: A plurality of second positioning and adjustment modules are provided on the circumference of the support ring.

13. The semiconductor process chamber according to claim 10, wherein: The flow control rings include a plurality of flow control rings with different thicknesses, and each flow control ring cooperates with the exhaust ring to form exhaust ports of different sizes.

14. The semiconductor process chamber according to claim 10, wherein: Supported by the support ring, the exhaust ring extends into the space enclosed by the gas shower head, the RF isolation ring, the carrier and the cavity, and a gap is provided between the exhaust ring, the RF isolation ring and the gas shower head to guide the inert gas introduced into the gas guide channel to the exhaust port of the exhaust channel.

15. A semiconductor process equipment, characterized in that: The invention comprises a radio frequency source and the semiconductor process chamber according to any one of claims 9 to 14.

16. The semiconductor process equipment according to claim 15, wherein: The semiconductor process equipment includes a plurality of semiconductor process chambers, and each of the semiconductor process chambers is provided with an upper electrode assembly, an exhaust assembly, a lower electrode assembly, and the radio frequency source connected thereto, wherein: The RF source is used to feed RF energy into the semiconductor process chamber, and the RF source has two feeding points in each semiconductor process chamber, and the angle formed by the line connecting the two feeding points and the center of the semiconductor process chamber is 180 degrees; and / or, The carrier is a plate-shaped member with two accommodating holes, the two accommodating holes are respectively located in the two semiconductor process chambers, and the radio frequency sources of the two semiconductor process chambers are mirror-imaged.

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