Seed wafer quantitative etching device and operation method thereof

Abstract

The present invention belongs to the field of semiconductor technology, and specifically relates to a device for processing semiconductors, and in particular to a seed crystal quantitative etching device and an operating method thereof. The present invention provides a seed crystal quantitative etching device, comprising: a reaction cylinder, which is filled with an etchant; a seed crystal rod, which penetrates the sealing disk and is suitable for sliding up and down relative to the reaction cylinder; a seed crystal, which is arranged at the lower end of the seed crystal rod; a buffer, whose lower end is arranged on the sealing disk, and the seed crystal rod slides inside the buffer; a linkage, which is sleeved on the outer wall of the seed crystal rod and is suitable for abutting against the buffer; wherein the seed crystal rod drives the linkage to move downward until the linkage abuts against the buffer, and the buffer is suitable for slowing down the downward movement speed of the seed crystal rod; after the etching of the seed crystal is completed, the seed crystal rod moves upward relative to the linkage, and the seed crystal rod rotates circumferentially relative to the linkage to throw off the etchant remaining on the bottom wall of the seed crystal.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor technology, and specifically relates to a device for processing semiconductors, and in particular to a seed wafer quantitative etching device and an operating method thereof. Background Art

[0002] When growing silicon carbide crystals by the liquid phase method, the seed crystal is immersed in the solution, and the saturated silicon carbide in the solution is precipitated and combined with the seed crystal to grow a silicon carbide crystal. After the seed crystal is immersed in the solution, the solution dissolves the seed crystal to form a growth step, and the saturated silicon carbide in the solution grows on the step. However, due to the differences in the components of each part of the solution, the solubility of the seed crystal is different, resulting in uneven distribution of steps on the surface of the seed crystal, and different crystal growth rates at different positions on the surface of the seed crystal, which affects the uniformity of crystal growth and affects the quality of the crystal.

[0003] In the related art, before the seed crystal is bonded, the seed crystal is etched to expose steps on the surface of the seed crystal for the growth of saturated silicon carbide in the solution. However, when the seed crystal is placed in the etching device for etching, improper operation may cause large ripples to form when the seed crystal is inserted into the etching solution, which ultimately affects the uniformity of the growth steps on the bottom wall of the seed crystal.

[0004] Therefore, under the above premise, how to solve the stability of the seed wafer placed in the etching solution is a technical problem that urgently needs to be solved in this field.

[0005] It should be noted that the above information disclosed in this background technology section is only used to understand the background technology of the present application concept, and therefore, the above description is not considered to constitute information of the prior art. Summary of the invention

[0006] The disclosed embodiments at least provide a seed wafer quantitative etching device and an operating method thereof.

[0007] In a first aspect, the present disclosure provides a seed wafer quantitative etching device, comprising:

[0008] A reaction cylinder filled with a corrosive agent;

[0009] A sealing plate, which is lifted and disposed on the reaction tube and is suitable for covering the reaction tube;

[0010] A seed crystal rod, which passes through the sealing disk and is suitable for sliding up and down relative to the reaction cylinder;

[0011] A seed crystal sheet, which is arranged at the lower end of the seed crystal rod;

[0012] A buffer, the lower end of which is disposed on the sealing disk, and the seed crystal rod slides inside the buffer;

[0013] A linkage member, which is sleeved on the outer wall of the seed crystal rod and is suitable for abutting against the buffer member;

[0014] The seed crystal rod drives the linkage member to move downward until the linkage member abuts against the buffer member, and the buffer member is suitable for slowing down the downward movement speed of the seed crystal rod;

[0015] After the etching of the seed crystal wafer is completed, the seed crystal rod moves upward relative to the linkage member, and the seed crystal rod rotates circumferentially relative to the linkage member to throw off the etching agent remaining on the bottom wall of the seed crystal wafer.

[0016] In an optional embodiment, the buffer member is a flexible member, and when the buffer member is squeezed and deformed by the linkage member, the outer wall of the seed rod is suitable for fitting with the inner wall of the buffer member.

[0017] In an optional embodiment, a plurality of dust exhaust holes are opened at the bottom of the buffer component near the sealing disk, and the dust exhaust holes are arranged radially along the sealing disk.

[0018] In an optional embodiment, a spiral groove is provided on the inner wall of the linkage member;

[0019] The outer wall of the seed crystal rod is provided with a convex block matched with the spiral groove, and the convex block is suitable for sliding in the spiral groove.

[0020] In an optional embodiment, a support platform is provided on the reaction cylinder, and the support platform and the sealing disk are parallel to each other;

[0021] The support platform is provided with a placement opening, and the diameter of the placement opening is larger than the diameter of the seed wafer.

[0022] In an optional embodiment, the outer diameter of the linkage member is greater than the inner diameter of the buffer member, and the downward movement of the linkage member is suitable for squeezing the buffer member to shrink and deform.

[0023] In an optional embodiment, the inner diameter of the buffer is slightly larger than the diameter of the seed crystal rod, and when the linkage member squeezes the buffer to shrink and deform, the inner wall of the buffer is suitable for abutting against the outer wall of the seed crystal rod.

[0024] In an optional embodiment, a heating furnace is provided on the outside of the reaction tube, and a plurality of heating wires are provided on the inner wall of the heating furnace, and the heating wires are suitable for heating the corrosive agent in the reaction tube.

[0025] In an optional embodiment, the reaction cylinder is filled with a corrosive agent;

[0026] A sealing disk, which covers the upper end of the reaction cylinder;

[0027] The part to be corroded penetrates the sealing disk and is suitable for sliding up and down relative to the reaction tube;

[0028] A buffer, the lower end of which is arranged on the sealing disk and sleeved on the outside of the part to be corroded;

[0029] A linkage member, which is sleeved on the outer wall of the member to be corroded and arranged above the buffer member;

[0030] The workpiece to be corroded and the linkage part move downward synchronously until the linkage part abuts against the buffer part, and the buffer part is suitable for slowing down the downward movement speed of the workpiece to be corroded when immersed in the corrosive agent;

[0031] After the etching is completed, the workpiece to be corroded moves upward relative to the linkage part, and the workpiece to be corroded rotates circumferentially relative to the linkage part to throw off the etching agent remaining on the bottom wall of the workpiece to be corroded.

[0032] In an optional embodiment, a spiral groove is provided on the inner wall of the linkage member;

[0033] The workpiece to be corroded includes: a seed crystal rod and a seed crystal plate, wherein the seed crystal plate is arranged at the lower end of the seed crystal plate;

[0034] The outer wall of the seed crystal rod is provided with a convex block matched with the spiral groove, and the convex block is suitable for sliding in the spiral groove.

[0035] In a second aspect, the present disclosure also provides an operating method of a corrosion device, the operating method comprising:

[0036] Weigh the seed wafer before etching it;

[0037] Mix NaOH, KOH and Na2O2 to prepare an etchant, inject the prepared etchant into the reaction tube, and heat the etchant to stabilize it;

[0038] The sealing disk is covered on the reaction cylinder, and the seed crystal rod drives the seed crystal to move into the reaction cylinder, and the seed crystal stays at a certain distance from the etchant for a certain time to preheat the seed crystal;

[0039] The seed crystal rod drives the linkage member to move downward until the linkage member abuts against the buffer member, and the buffer member is suitable for slowing down the downward movement speed of the seed crystal rod;

[0040] After the seed wafer is immersed in the corrosive agent for a certain period of time, the seed wafer is taken out from the corrosive agent;

[0041] After the etching of the seed crystal wafer is completed, the seed crystal rod moves upward relative to the linkage member, and the seed crystal rod rotates circumferentially relative to the linkage member to throw off the etching agent remaining on the bottom wall of the seed crystal wafer;

[0042] The seed wafer is taken out of the etchant, placed in hydrofluoric acid to neutralize the etchant on the surface of the seed wafer, and then the seed wafer is rinsed with distilled water.

[0043] The beneficial effect of the present invention is that the seed chip quantitative etching device and its operation method of the present invention, through the cooperation of the buffer and the linkage, in the process of the seed chip gradually moving toward the corrosive agent in the reaction cylinder, the buffer can slow down the downward movement speed of the seed chip, thereby avoiding the seed chip impacting the corrosive agent due to the seed chip moving downward too fast, causing large fluctuations on the surface of the corrosive agent and affecting the corrosion effect of the corrosive agent on the seed chip.

[0044] After the seed crystal is separated from the corrosive agent, the seed crystal rotates in the circumferential direction, which can throw off the corrosive agent remaining on the bottom wall of the seed crystal, thus preventing the seed crystal from being excessively corroded. At the same time, the seed crystal rod rubs against the inner wall of the buffer when it moves up and down relative to the buffer, which can magnify the damaged part of the inner wall of the buffer, so that the wear of the buffer can be found manually in time, thus avoiding the decrease in buffering performance caused by the wear of the buffer, which leads to an increase in the downward movement speed and downward movement stroke of the seed crystal, and improving the corrosion stability of the seed crystal.

[0045] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description, claims and drawings.

[0046] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, this article specifically cites preferred embodiments and provides detailed descriptions as follows in conjunction with the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0048] Figure 1 A three-dimensional diagram of a seed wafer quantitative etching device provided in an embodiment of the present disclosure;

[0049] Figure 2 An internal cross-sectional view of a reaction tube provided in an embodiment of the present disclosure;

[0050] Figure 3 A cross-sectional perspective view of a sealing disk and a buffer member provided in an embodiment of the present disclosure;

[0051] Figure 4 A schematic diagram of the compression deformation of the linkage member extrusion buffer member provided in an embodiment of the present disclosure.

[0052] In the figure:

[0053] 1. Reaction tube; 10. Support platform; 11. Heating furnace;

[0054] 2. Sealing plate;

[0055] 3. Seed crystal rod; 30. Bump;

[0056] 4. Buffer; 40. Dust discharge hole;

[0057] 5. Linkage; 50. Spiral groove;

[0058] 6. Seed chip. DETAILED DESCRIPTION

[0059] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0060] In this article, when it is mentioned that the first component is located on the second component, this may mean that the first component may be directly formed on the second component, or the third component may be interposed between the first component and the second component. In addition, in the drawings, in order to effectively describe the technical content, the thickness of the components may be exaggerated or reduced.

[0061] Herein, example embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. As used herein, expressions such as "at least one of..." modify the entire list of elements when following a list of elements, rather than modifying individual elements in the list. For example, the expression "at least one of a, b, and c" should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0062] The terms used herein are only used to describe specific exemplary configurations and are not intended to be limited. As used herein, the singular articles "one", "an" and "the" may also be intended to include plural forms, unless it is clearly indicated above that this is not the case. The terms "comprise", "include" and "have" are inclusive, and therefore specify the presence of features, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, elements, components and / or combinations thereof. The method steps, processes and operations described herein should not be interpreted as necessarily requiring them to be performed in the specific order discussed or shown, unless specifically identified as an execution order. Additional or alternative steps may be adopted.

[0063] As used herein, the phrases "in one embodiment," "according to one embodiment," "in some embodiments," and the like generally refer to the fact that the particular feature, structure, or characteristic following the phrase may be included in at least one embodiment of the present disclosure. Therefore, a particular feature, structure, or characteristic may be included in more than one embodiment of the present disclosure, so that these phrases do not necessarily refer to the same embodiment. As used herein, the terms "example," "exemplary," and the like are used to "serve as an example, instance, or illustration." Any implementation, aspect, or design described herein as "example" or "exemplary" is not necessarily to be construed as preferred or superior to other implementations, aspects, or designs. On the contrary, the use of the terms "example," "exemplary," and the like is intended to present concepts in a concrete manner.

[0064] The research found that the disadvantages of the prior art are as follows: before the seed crystal is bonded, the seed crystal is corroded to expose steps on the surface of the seed crystal for the growth of saturated silicon carbide in the solution. When the seed crystal is placed in the etching device for etching, improper operation will cause large ripples to form when the seed crystal is inserted into the etching solution, that is, the speed at which the seed crystal is inserted into the corrosive agent is too fast, which will cause large ripples and vibrations on the surface of the corrosive agent. The large ripples and vibrations of the corrosive agent will affect the corrosion effect on the seed crystal; moreover, the increase in the downward movement of the seed crystal will also affect the corrosion effect, and ultimately affect the uniformity of the growth steps on the bottom wall of the seed crystal.

[0065] Therefore, how to solve the stability of the seed wafer when placed in the etching solution is a technical problem that needs to be solved urgently in this field.

[0066] The defects existing in the above solutions are the results obtained by the inventor after practice and careful research. Therefore, the discovery process of the above problems and the solutions proposed by the present invention in this article for the above problems should be the contributions made by the inventor to the present invention during the disclosure process.

[0067] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0068] Some embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0069] like Figures 1 to 4As shown, some embodiments provide a quantitative etching device for seed crystal 6, including: a reaction cylinder 1, in which an etchant is injected; after the seed crystal 6 is immersed in the etchant, the etchant is suitable for etching the bottom wall of the seed crystal 6 into a step suitable for the growth of saturated silicon carbide. A sealing plate 2 is set on the reaction cylinder 1 and is suitable for covering the reaction cylinder 1; after the seed crystal 6 is weighed, the sealing plate 2 is covered on the reaction cylinder 1, which prevents the heat loss in the reaction cylinder 1 and the etchant from volatilizing outward, and is also conducive to the manual operation of the seed crystal rod 3 to move up and down. The seed crystal rod 3 penetrates the sealing plate 2 and is suitable for sliding up and down relative to the reaction cylinder 1; the seed crystal rod 3 is arranged at the center of the sealing plate 2. The seed crystal 6 is arranged at the lower end of the seed crystal rod 3; before the seed crystal 6 is corroded, the seed crystal 6 needs to be weighed, and after the corrosion is completed, the seed crystal 6 needs to be weighed again. After the seed crystal 6 is corroded, its weight is reduced by 2±0.2g; through the change in weight before and after corrosion, it can be preliminarily judged whether the corrosion effect of the seed crystal 6 is qualified. The buffer 4 has its lower end arranged on the sealing disk 2, and the seed crystal rod 3 slides inside the buffer 4; the linkage 5 is sleeved on the outer wall of the seed crystal rod 3 and is suitable for abutting against the buffer 4; wherein, the seed crystal rod 3 drives the linkage 5 to move downward until the linkage 5 abuts against the buffer 4, and the buffer 4 is suitable for slowing down the downward movement speed of the seed crystal rod 3; when the linkage 5 moves downward, it is suitable for squeezing the buffer 4 to shrink and deform, and the buffer 4 slows down the descending speed of the seed crystal rod 3 during the deformation process. At the same time, during the shrinkage and deformation process of the buffer 4, the internal air is gradually compressed, so that the dust falling from the outer wall of the seed crystal rod 3 into the buffer 4 is discharged outward through the dust discharge hole 40. After the etching of the seed crystal plate 6 is completed, the seed crystal rod 3 moves upward relative to the linkage 5, and the seed crystal rod 3 rotates circumferentially relative to the linkage 5 to throw off the corrosive agent remaining on the bottom wall of the seed crystal plate 6. Through the cooperation of the buffer 4 and the linkage 5, in the process of the seed chip 6 gradually moving towards the corrosive agent in the reaction tube 1, the buffer 4 can slow down the downward movement speed of the seed chip 6, thereby avoiding the seed chip 6 impacting the corrosive agent due to the seed chip 6 moving down too fast, causing large fluctuations on the surface of the corrosive agent and affecting the corrosion effect of the corrosive agent on the seed chip 6.

[0070] After the seed crystal 6 is separated from the etchant, the seed crystal 6 rotates in the circumferential direction, and the etchant remaining on the bottom wall of the seed crystal 6 can be thrown off, thereby preventing the seed crystal 6 from being excessively corroded. At the same time, the seed crystal rod 3 rubs against the inner wall of the buffer 4 during the process of moving up and down relative to the buffer 4, and can magnify the damaged part of the inner wall of the buffer 4, so that the wear of the buffer 4 can be found manually and in time, thereby preventing the buffer performance from being reduced due to the wear of the buffer 4, and thus preventing the seed crystal 6 from moving downward at an increased speed and travel, thereby improving the corrosion stability of the seed crystal 6.

[0071] Reference Figure 4The buffer 4 is a flexible member. When the buffer 4 is squeezed and deformed by the linkage member 5, the outer wall of the seed rod 3 is adapted to fit the inner wall of the buffer 4. A plurality of dust discharge holes 40 are provided at the bottom of the buffer 4 near the sealing disk 2. The dust discharge holes 40 are arranged radially along the sealing disk 2. When the linkage member 5 moves downward, the linkage member 5 squeezes the buffer member 4 to shrink and deform. When the buffer member 4 shrinks and deforms, its inner wall abuts against the outer wall of the seed rod 3, and the outer wall of the seed rod 3 rubs against the inner wall of the buffer member 4. The buffer member 4 will clean the dust on the outer wall of the seed rod 3. At the same time, in the process of the buffer member 4 being squeezed and contracted, the dust is discharged outward through the dust exhaust hole 40; when the seed rod 3 rotates relative to the buffer member 4, the wear of the buffer member 4 will be accelerated. Therefore, when the seed rod 3 is separated from the buffer member 4, the buffer member 4 is aged due to repeated use, and the friction caused by the rotation of the seed rod 3 will cause the cracks to increase, which will help to manually discover the aging of the buffer member 4 earlier, and can also remind the operator to replace the buffer member 4 in time.

[0072] When the aging of the buffer 4 is not discovered in time, when the seed crystal rod 3 and the linkage part 5 move downward synchronously, the buffering effect of the buffer 4 on the linkage part 5 is reduced due to the aging of the buffer 4. Therefore, the descending speed of the seed crystal chip 6 will be greater than the normal descending speed. When the seed crystal chip 6 contacts the corrosive agent, larger fluctuations and liquid surface ripples will be generated. At the same time, the stroke of the seed crystal chip 6 immersed in the corrosive agent is also greater than the normal stroke, causing the seed crystal chip 6 to be excessively corroded.

[0073] Reference Figure 2 The inner wall of the linkage member 5 is provided with a spiral groove 50; the outer wall of the seed crystal rod 3 is provided with a convex block 30 adapted to the spiral groove 50, and the convex block 30 is suitable for sliding in the spiral groove 50. When the seed crystal rod 3 moves upward relative to the linkage member 5, the convex block 30 is suitable for sliding in the spiral groove 50, so that the seed crystal rod 3 rotates circumferentially relative to the linkage member 5.

[0074] Furthermore, a support platform 10 is provided on the reaction cylinder 1, and the support platform 10 is parallel to the sealing disk 2; a placement opening is provided on the support platform 10, and the diameter of the placement opening is larger than the diameter of the seed crystal sheet 6. The setting of the support platform 10 is suitable for limiting the sealing disk 2 to improve the stability of the seed crystal rod 3 when it moves downward.

[0075] In order to compress the buffer 4 to shrink and deform, the outer diameter of the linkage member 5 is larger than the inner diameter of the buffer 4, and the linkage member 5 moves downward to compress the buffer 4 to shrink and deform. When the buffer 4 is compressed and deformed, its inner wall is suitable for fitting with the outer wall of the seed crystal rod 3. When the seed crystal rod 3 rotates circumferentially relative to the buffer 4, the friction between the seed crystal rod 3 and the inner wall of the buffer 4 increases, thereby magnifying the small cracks on the inner wall of the buffer 4, so as to facilitate manual observation of whether the buffer 4 has cracks caused by aging.

[0076] The inner diameter of the buffer member 4 is slightly larger than the diameter of the seed crystal rod 3 . When the linkage member 5 squeezes the buffer member 4 to shrink and deform, the inner wall of the buffer member 4 is suitable for abutting against the outer wall of the seed crystal rod 3 .

[0077] Reference Figure 1 A heating furnace 11 is provided on the outside of the reaction tube 1 , and a plurality of heating wires are provided on the inner wall of the heating furnace 11 . The heating wires are suitable for heating the corrosive agent in the reaction tube 1 .

[0078] Some embodiments provide a seed wafer 6 quantitative etching device, comprising:

[0079] A reaction tube 1, in which a corrosive agent is injected;

[0080] A sealing disk 2, which covers the upper end of the reaction cylinder 1;

[0081] The part to be corroded passes through the sealing disk 2 and is suitable for sliding up and down relative to the reaction cylinder 1;

[0082] The buffer member 4 has a lower end disposed on the sealing disk 2 and is sleeved outside the member to be corroded;

[0083] A linkage member 5 is sleeved on the outer wall of the member to be corroded and arranged above the buffer member 4;

[0084] The workpiece to be corroded and the linkage member 5 move downward synchronously until the linkage member 5 abuts against the buffer member 4, and the buffer member 4 is suitable for slowing down the downward movement speed of the workpiece to be corroded into the corrosive agent;

[0085] After the etching is completed, the workpiece to be corroded moves upward relative to the linkage member 5, and the workpiece to be corroded rotates circumferentially relative to the linkage member 5 to throw off the etching agent remaining on the bottom wall of the workpiece to be corroded.

[0086] The inner wall of the linkage member 5 is provided with a spiral groove 50;

[0087] The workpiece to be corroded includes: a seed crystal rod 3 and a seed crystal plate 6, wherein the seed crystal plate 6 is arranged at the lower end of the seed crystal plate 6;

[0088] The outer wall of the seed rod 3 is provided with a protrusion 30 adapted to the spiral groove 50 , and the protrusion 30 is suitable for sliding in the spiral groove 50 .

[0089] Some embodiments provide a method for operating a corrosion device, the method comprising:

[0090] Before the seed wafer 6 is corroded, the seed wafer 6 is weighed;

[0091] Prepare an etchant with NaOH, KOH and Na2O2 in a mass ratio of 10:10:1, inject the prepared etchant into the reaction tube 1, heat the etchant to 500°C, and stabilize it for 30 minutes;

[0092] The sealing plate 2 is covered on the reaction tube 1, and the seed crystal rod 3 drives the seed crystal 6 to move into the reaction tube 1, and the seed crystal 6 stays at a distance of 1 cm from the etchant for 10 minutes to preheat the seed crystal 6;

[0093] The seed crystal rod 3 drives the linkage member 5 to move downward until the linkage member 5 abuts against the buffer member 4, and the buffer member 4 is suitable for slowing down the downward movement speed of the seed crystal rod 3;

[0094] The seed wafer 6 is immersed in the etchant for 15 minutes, and the seed wafer 6 is taken out from the etchant;

[0095] After the etching of the seed crystal sheet 6 is completed, the seed crystal rod 3 moves upward relative to the linkage member 5, and the seed crystal rod 3 rotates circumferentially relative to the linkage member 5 to throw off the etching agent remaining on the bottom wall of the seed crystal sheet 6;

[0096] The seed wafer 6 is taken out from the etchant, placed in hydrofluoric acid to neutralize the etchant on the surface of the seed wafer 6, and then the seed wafer 6 is rinsed with distilled water.

[0097] In the description of the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0098] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. In addition, terms such as "first", "second" and other numerical terms do not imply an order or sequence when used in this document unless explicitly indicated above. Therefore, without departing from the teachings of the example embodiments, the first element, component, region, layer or section discussed above may be referred to as a second element, component, region, layer or section.

[0099] Based on the above ideal embodiments of the present invention, the relevant staff can make various changes and modifications without departing from the technical concept of the present invention through the above description. The technical scope of the present invention is not limited to the contents of the specification, and its technical scope must be determined according to the scope of the claims.

Claims

1. A seed wafer quantitative etching device, characterized in that: include: A reaction cylinder (1) filled with a corrosive agent; A sealing plate (2) which is arranged on the reaction cylinder (1) in a lifting manner and is suitable for covering the reaction cylinder (1); A seed crystal rod (3), which passes through the sealing disk (2) and is suitable for sliding up and down relative to the reaction cylinder (1); A seed crystal sheet, which is arranged at the lower end of the seed crystal rod (3); A buffer member (4), the lower end of which is arranged on the sealing disk (2), and the seed crystal rod (3) is slidably arranged inside the buffer member (4); A linkage member (5) sleeved on the outer wall of the seed crystal rod (3) and suitable for abutting against the buffer member (4); The seed crystal rod (3) drives the linkage member (5) to move downward until the linkage member (5) abuts against the buffer member (4), and the buffer member (4) is suitable for slowing down the downward movement speed of the seed crystal rod (3); After the etching of the seed crystal wafer is completed, the seed crystal rod (3) moves upward relative to the linkage member (5), and the seed crystal rod (3) rotates circumferentially relative to the linkage member (5) to throw off the etching agent remaining on the bottom wall of the seed crystal wafer; The buffer member (4) is a flexible member, and when the buffer member (4) is squeezed and deformed by the linkage member (5), the outer wall of the seed crystal rod (3) is adapted to fit with the inner wall of the buffer member (4).

2. The seed wafer quantitative etching device according to claim 1, characterized in that: A plurality of dust discharge holes (40) are provided at the bottom of the buffer member (4) near the sealing disk (2), and the dust discharge holes (40) are arranged radially along the sealing disk (2).

3. The seed wafer quantitative etching device according to claim 1, characterized in that: The inner wall of the linkage member (5) is provided with a spiral groove (50); The outer wall of the seed crystal rod (3) is provided with a convex block (30) matched with the spiral groove (50), and the convex block (30) is suitable for sliding in the spiral groove (50).

4. The seed wafer quantitative etching device according to claim 1, characterized in that: A support platform (10) is provided on the reaction cylinder (1), and the support platform (10) and the sealing disk (2) are parallel to each other; The support platform (10) is provided with a placement opening, and the diameter of the placement opening is larger than the diameter of the seed chip.

5. The seed wafer quantitative etching device according to claim 1, characterized in that: The outer diameter of the linkage member (5) is greater than the inner diameter of the buffer member (4), and the linkage member (5) moves downwards to squeeze the buffer member (4) to shrink and deform.

6. The seed wafer quantitative etching device according to claim 1, characterized in that: The inner diameter of the buffer member (4) is slightly larger than the diameter of the seed crystal rod (3); when the linkage member (5) squeezes the buffer member (4) to shrink and deform, the inner wall of the buffer member (4) is suitable for abutting against the outer wall of the seed crystal rod (3).

7. The seed wafer quantitative etching device according to claim 1, characterized in that: The reaction tube (1) is provided with a heating furnace (11) on its exterior, and the inner wall of the heating furnace (11) is provided with a plurality of heating wires, wherein the heating wires are suitable for heating the corrosive agent in the reaction tube (1).

8. A seed wafer quantitative etching device, characterized in that: A reaction cylinder (1) filled with a corrosive agent; A sealing disk (2) covering the upper end of the reaction cylinder (1); A part to be corroded, which passes through the sealing disk (2) and is suitable for sliding up and down relative to the reaction cylinder (1); A buffer member (4), the lower end of which is arranged on the sealing disk (2) and sleeved on the outside of the member to be corroded; A linkage member (5) is sleeved on the outer wall of the member to be corroded and is arranged above the buffer member (4); The part to be corroded and the linkage part (5) move downward synchronously until the linkage part (5) abuts against the buffer part (4), and the buffer part (4) is suitable for slowing down the downward movement speed of the part to be corroded when immersed in the corrosive agent; After the etching is completed, the workpiece to be corroded moves upward relative to the linkage member (5), and the workpiece to be corroded rotates circumferentially relative to the linkage member (5) to throw off the etching agent remaining on the bottom wall of the workpiece to be corroded; The buffer member (4) is a flexible member, and when the buffer member (4) is squeezed and deformed by the linkage member (5), the outer wall of the seed crystal rod (3) is adapted to fit with the inner wall of the buffer member (4).

9. The seed wafer quantitative etching device according to claim 8, characterized in that: The inner wall of the linkage member (5) is provided with a spiral groove (50); The part to be corroded comprises: a seed crystal rod (3) and a seed crystal plate, wherein the seed crystal plate is arranged at the lower end of the seed crystal plate; The outer wall of the seed crystal rod (3) is provided with a convex block (30) matched with the spiral groove (50), and the convex block (30) is suitable for sliding in the spiral groove (50).

10. A method for operating a corrosion device, characterized in that: Using the seed wafer quantitative etching device as claimed in claim 1, the operating method comprises: Weigh the seed wafer before etching it; NaOH, KOH and Na2O2 are mixed into an etchant in a certain mass ratio, the mixed etchant is injected into a reaction tube (1), and the etchant is heated and stabilized; The sealing plate (2) covers the reaction tube (1), and the seed crystal rod (3) drives the seed crystal sheet to move into the reaction tube (1), and the seed crystal sheet stays for a certain period of time after being a certain distance away from the etchant, so as to preheat the seed crystal sheet; The seed crystal rod (3) drives the linkage member (5) to move downward until the linkage member (5) abuts against the buffer member (4), wherein the buffer member (4) is suitable for slowing down the downward movement speed of the seed crystal rod (3); After the seed wafer is immersed in the corrosive agent for a certain period of time, the seed wafer is taken out from the corrosive agent; After the etching of the seed crystal wafer is completed, the seed crystal rod (3) moves upward relative to the linkage member (5), and the seed crystal rod (3) rotates circumferentially relative to the linkage member (5) to throw off the etching agent remaining on the bottom wall of the seed crystal wafer; The seed wafer is taken out of the etchant, placed in hydrofluoric acid to neutralize the etchant on the surface of the seed wafer, and then the seed wafer is rinsed with distilled water.

Images