Metasurface infrared narrowband absorber and method of manufacturing the same

Abstract

The application discloses an ultrathin infrared narrow-band absorber and a manufacturing method thereof. The ultrathin infrared narrow-band absorber comprises a substrate layer, a functional layer and a bonding layer. The substrate layer comprises a substrate and a metal reflection layer arranged on the upper surface of the substrate. The functional layer comprises a support layer and a metal ultrathin layer. The middle part of the support layer is provided with an opening. The metal ultrathin layer comprises a functional area and an edge area. The functional area is provided with an ultrathin structure. The ultrathin structure comprises a plurality of sub-wavelength size through holes penetrating through the metal ultrathin layer in the thickness direction. The bonding layer is arranged between the substrate layer and the functional layer, and the substrate layer and the functional layer are connected through the bonding layer. The middle part of the bonding layer is provided with an opening. The metal ultrathin layer and the metal reflection layer are spaced apart through the bonding layer to form a resonance cavity between the metal ultrathin layer and the metal reflection layer. The ultrathin infrared narrow-band absorber according to the embodiment of the application can realize infrared narrow-band absorption, and has the advantages of high quality factor and good processing compatibility.

Description

Technical Field

[0001] The present invention relates to the technical field of metamaterial absorbers, and in particular to a metasurface infrared narrowband absorber and a method for manufacturing the metasurface infrared narrowband absorber. Background Art

[0002] Metasurface is an artificial material with arranged subwavelength-sized units that can control the amplitude, phase, frequency, and polarization of electromagnetic waves.

[0003] The mid-infrared band usually refers to infrared radiation in the range of 2-25 microns, also known as thermal infrared or emission infrared. Since most organic and inorganic substances have strong absorption peaks in the mid-infrared band, narrow-band absorbers in the mid-infrared band can be used for gas detection, imaging and detection, and have important application value in military, environmental testing, medical research and other scenarios.

[0004] Related art infrared narrowband absorbers use a three-layer structure consisting of a metal metasurface, a dielectric, and a metal, leveraging metal surface plasmon resonance. However, this approach typically results in a wide absorption bandwidth and a low quality factor (Q value). Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes a metasurface infrared narrowband absorber that can achieve infrared narrowband absorption and has advantages such as a high quality factor and good processing compatibility.

[0006] The present invention also proposes a method for manufacturing the metasurface infrared narrow-band absorber.

[0007] To achieve the above-mentioned purpose, according to an embodiment of the first aspect of the present invention, a metasurface infrared narrowband absorber is proposed, the metasurface infrared narrowband absorber comprising: a base layer, the base layer comprising a base and a metal reflective layer arranged on the upper surface of the base, the metal reflective layer being suitable for reflecting infrared rays; a functional layer, the functional layer comprising a support layer and a metal metasurface layer arranged on the lower surface of the support layer, the middle portion of the support layer being provided with a passage penetrating the support layer in the up-down direction, the metal metasurface layer comprising a functional region and an edge region, the functional region being located inside the edge region in the horizontal direction, the functional region being provided with a metasurface structure, the metasurface structure comprising a plurality of passages penetrating the support layer in the thickness direction. A subwavelength-sized through hole in the metal super surface layer, the supporting layer is opposite to the edge region in the up-down direction, the through hole is opposite to the functional region in the up-down direction, and the projection of the functional region in the up-down direction is located in the metal reflective layer; a bonding layer, the bonding layer is located between the base layer and the functional layer and the base layer and the functional layer are bonded together through the bonding layer, the middle part of the bonding layer has an avoidance opening that passes through the bonding layer in the up-down direction, the projection of the functional region in the up-down direction is located in the avoidance opening, the metal super surface layer and the metal reflective layer are separated by the bonding layer to form a resonant cavity between the metal super surface layer and the metal reflective layer.

[0008] The metasurface infrared narrowband absorber according to the embodiment of the present invention can achieve infrared narrowband absorption and has the advantages of high quality factor, good processing compatibility, etc.

[0009] In addition, the metasurface infrared narrowband absorber according to the above embodiment of the present invention may also have the following additional technical features:

[0010] According to one embodiment of the present invention, the metasurface structure is constructed such that a plurality of the sub-wavelength-sized through holes are arranged in an array within the functional area.

[0011] According to one embodiment of the present invention, the sub-wavelength through hole is a rectangular hole, a circular hole or a cross-shaped hole.

[0012] According to one embodiment of the present invention, the thickness of the metal super surface layer in the up and down directions is greater than or equal to 50 nanometers, the thickness of the metal reflective layer in the up and down directions is greater than or equal to 50 nanometers, the horizontal length of the functional area is 100 microns-1 centimeter, and the horizontal width of the functional area is 100 microns-1 centimeter.

[0013] According to one embodiment of the present invention, the thickness of the support layer in the vertical direction is 200-500 microns, the horizontal length of the substrate is 5 mm-50 mm, the horizontal width of the substrate is 5 mm-50 mm, and the thickness of the bonding layer in the vertical direction is 2-20 microns.

[0014] According to one embodiment of the present invention, the metal reflective layer and the metal super surface layer are gold material layers, silver material layers, copper material layers or aluminum material layers.

[0015] According to one embodiment of the present invention, an adhesion layer is provided between the metal reflective layer and the substrate and between the metal super surface layer and the support layer, and the adhesion layer is a chromium material layer or a titanium material layer.

[0016] According to one embodiment of the present invention, the bonding layer is photoresist, optical tape or photosensitive polymer.

[0017] According to an embodiment of the second aspect of the present invention, a method for manufacturing the metasurface infrared narrowband absorber according to an embodiment of the first aspect of the present invention is provided, comprising the following steps:

[0018] S1. Providing a functional layer substrate, and forming a metal super surface layer on the functional layer substrate;

[0019] S2, preparing a protective layer on the metal super surface layer, and processing the port on the functional layer substrate by photolithography and etching to obtain the supporting layer;

[0020] S3, removing the protective layer by wet etching and dry etching to obtain the functional layer;

[0021] S4. Evaporating the metal reflective layer on the substrate to form the substrate layer, and bonding the functional layer and the substrate layer through the bonding layer to obtain the metasurface infrared narrow-band absorber.

[0022] The manufacturing method of the metasurface infrared narrow-band absorber according to the embodiment of the present invention can achieve infrared narrow-band absorption and has the advantages of high quality factor and good processing compatibility.

[0023] According to an embodiment of the present invention, between steps S3 and S4, the method further includes: preparing the bonding layer on the substrate by spin coating, and adjusting the thickness of the bonding layer by adjusting the rotation speed and time of spin coating.

[0024] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments with reference to the following drawings, in which:

[0026] Figure 1 3 is a schematic structural diagram of a metasurface infrared narrow-band absorber according to an embodiment of the present invention.

[0027] Figure 2 is an exploded diagram of a metasurface infrared narrow-band absorber according to an embodiment of the present invention.

[0028] Figure 3 is a cross-sectional view of a metasurface infrared narrow-band absorber according to an embodiment of the present invention.

[0029] Figure 4 Schematic diagram of the structure of the metal metasurface layer of a metasurface infrared narrowband absorber according to an embodiment of the present invention.

[0030] Figure 5 It is a schematic structural diagram of the metal metasurface layer of a metasurface infrared narrowband absorber according to another embodiment of the present invention.

[0031] Figure 6 It is a schematic structural diagram of the metal metasurface layer of a metasurface infrared narrowband absorber according to another embodiment of the present invention.

[0032] Figure 7 1 is an optical microscopic image of a metal metasurface layer of a metasurface infrared narrowband absorber according to an embodiment of the present invention.

[0033] Figure 8 This is a local electron microscopic image of the metal metasurface layer of the metasurface infrared narrowband absorber according to an embodiment of the present invention.

[0034] Figure 9 This is a simulation result of the infrared spectrum characteristics of the metasurface infrared narrow-band absorber according to an embodiment of the present invention.

[0035] Figure 10 1 is a schematic diagram of the process of manufacturing a metasurface infrared narrow-band absorber according to an embodiment of the present invention.

[0036] Figure 11 4 is a flow chart of a method for manufacturing a metasurface infrared narrow-band absorber according to an embodiment of the present invention.

[0037] Figure numerals: metasurface infrared narrowband absorber 1, base layer 10, base 11, metal reflective layer 12, functional layer 20, support layer 21, through port 211, metal metasurface layer 22, metasurface structure 221, subwavelength-sized through hole 2210, edge region 222, bonding layer 30, avoidance port 31, functional layer substrate 21', resonant cavity 40, protective layer 50. DETAILED DESCRIPTION

[0038] This application is based on the inventor's discovery and understanding of the following facts and problems:

[0039] Related art infrared narrowband absorbers use a three-layer structure consisting of a metal metasurface, a dielectric, and a metal, leveraging metal surface plasmon resonance. However, this approach typically results in a wide absorption bandwidth and a low quality factor (Q value).

[0040] The Q value is a key metric for metamaterial absorbers. Metamaterial absorbers in related technologies employ metal, dielectric, and metal structures. Due to their structural characteristics, they generally suffer from significant losses and low Q values. Furthermore, multiple reflections in the substrate generate stray peaks, making them difficult to meet the requirements for precise spectral measurements at specific wavelengths. Devices based on substrate-free metasurfaces in related technologies are limited by small air gaps and can only utilize the metasurface's own resonance for frequency selection. Furthermore, existing substrate-free metasurface processing methods are incompatible with traditional micromachining processes, preventing efficient and large-scale fabrication.

[0041] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0042] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, features defined as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0043] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0044] The following describes a metasurface infrared narrow-band absorber 1 according to an embodiment of the present invention with reference to the accompanying drawings.

[0045] like Figures 1-11 As shown, the metasurface infrared narrowband absorber 1 according to an embodiment of the present invention includes a base layer 10 , a functional layer 20 and a bonding layer 30 .

[0046] The base layer 10 includes a base 11 and a metal reflective layer 12 provided on the upper surface of the base 11 (the up and down directions are shown by arrows in the figure and are only for ease of description, not for limiting the actual setting direction). The metal reflective layer 12 is suitable for reflecting infrared rays.

[0047] The functional layer 20 includes a support layer 21 and a metal supersurface layer 22 arranged on the lower surface of the support layer 21. A through-hole 211 is provided in the middle of the support layer 21 and penetrates the support layer 21 in the up-down direction. The metal supersurface layer 22 includes a functional area and an edge area 222. The functional area is located on the inner side of the edge area 222 in the horizontal direction. The functional area is provided with a supersurface structure 221. The supersurface structure 221 includes a plurality of sub-wavelength-sized through holes 2210 penetrating the metal supersurface layer 22 in the thickness direction. The support layer 21 is opposite to the edge area 222 in the up-down direction, and the through-hole 211 is opposite to the functional area in the up-down direction. The projection of the functional area in the up-down direction is located in the metal reflective layer 12.

[0048] The bonding layer 30 is located between the base layer 10 and the functional layer 20, and the base layer 10 and the functional layer 20 are bonded together through the bonding layer 30. The middle part of the bonding layer 30 has an avoidance opening 31 that passes through the bonding layer 30 in the up and down directions. The projection of the functional area in the up and down directions is located in the avoidance opening 31. The metal super surface layer 22 and the metal reflective layer 12 are separated by the bonding layer 30 to form a resonant cavity 40 between the metal super surface layer 22 and the metal reflective layer 12.

[0049] It should be understood here that the metasurface structure 221 is composed of multiple metasurface units, and the metasurface unit is a subwavelength-sized through-hole 2210. The subwavelength-sized through-hole 2210 refers to a through-hole with a subwavelength size. Those skilled in the art can adjust the electromagnetic resonance characteristics of the metasurface unit by changing the structure, size, and period of the metasurface unit according to actual needs, thereby having a substantial impact on the spectral characteristics of the absorber, such as the center wavelength, full width at half maximum, and absorptivity. Those skilled in the art can adjust the thickness of the bonding layer 30 in the vertical direction according to actual needs to change the height of the resonant cavity 40 in the vertical direction.

[0050] Specifically, the thickness of the metal reflective layer 12 is much greater than the skin depth of electromagnetic waves in the infrared band so that the metal reflective layer 12 can reflect infrared rays without transmission. The resonant cavity 40 is defined by the metal metasurface layer 22, the bonding layer 30 and the metal reflective layer 12.

[0051] Resonant cavity 40 can be considered an air-medium Fabry-Perot (FP) resonant cavity. Under external excitation, it generates FP resonance; metasurface structure 221 itself also resonates. Resonance occurs when the frequency of the external excitation electromagnetic wave matches the characteristic frequency of metasurface infrared narrowband absorber 1. The coupling between metasurface structure 221 and resonant cavity 40 prevents reflection of electromagnetic waves at that frequency, resulting in perfect selective absorption of specific frequencies.

[0052] By adjusting the thickness of the bonding layer 30 in the up and down directions, resonant cavities 40 of different heights can be formed, that is, the FP cavity length can be adjusted by the thickness of the bonding layer 30. The height of the resonant cavity 40 dominates the central wavelength of the narrowband absorption. Metasurface structures 221 of different shapes and sizes also have different resonant frequencies. Through the comprehensive design of the two, high-Q value narrowband perfect absorption at the characteristic wavelength of the entire mid-infrared band can be achieved.

[0053] During operation, an incident wave passes through the port 211 and the subwavelength-sized through-hole 2210 of the support layer 21 and enters the resonant cavity 40. Under the action of the incident beam, the resonant cavity 40 formed between the metasurface structure 221 and the metal reflective layer 12 undergoes FP resonance. Simultaneously, the plasmons in the metasurface structure 221 also resonate, and the coupling between the two achieves perfect narrowband absorption of a specific central wavelength. Furthermore, when heated to high temperatures, the metasurface infrared narrowband absorber 1 exhibits a perfect radiation effect, achieving perfect radiation of a specific wavelength.

[0054] According to the metasurface infrared narrowband absorber 1 of an embodiment of the present invention, a bonding layer 30 is provided so that the metal metasurface layer 22 and the metal reflective layer 12 are separated by the bonding layer 30 to form a resonant cavity 40 between the metal metasurface layer 22 and the metal reflective layer 12. Compared with the three-layer structure of metasurface, medium and metal adopted in the related art, the coupling effect of the FP cavity resonance of the resonant cavity 40 and the resonance of the metasurface structure 221 can be utilized to further compress the half-maximum full width while ensuring high absorption rate to achieve narrowband absorption.

[0055] Moreover, by setting a support layer 21, the support layer 21 can be used to support the metal super surface layer 22. By setting a port 211 on the support layer 21, the port 211 is opposite to the functional area in the up and down directions, and a substrate-free structure can be formed at the super surface structure 221. Compared with the three-layer substrate method in the related art, setting a substrate-free super surface structure eliminates the loss in the medium, so that the loss of the system is mainly the ohmic loss of the metal, which greatly improves the Q value.

[0056] In addition, the metasurface infrared narrowband absorber 1 has a simple structure, and its manufacturing method is suitable for micro-electromechanical system (MEMS) processing technology, which can achieve wafer-level processing, has good process compatibility, is easy to manufacture, and can be easily integrated with other micro-electromechanical system devices.

[0057] Therefore, the metasurface infrared narrow-band absorber 1 according to the embodiment of the present invention can achieve infrared narrow-band absorption and has the advantages of high quality factor and good processing compatibility.

[0058] The following describes a metasurface infrared narrow-band absorber 1 according to a specific embodiment of the present invention with reference to the accompanying drawings.

[0059] In some specific embodiments of the present invention, Figures 1-11 As shown, the metasurface infrared narrowband absorber 1 according to an embodiment of the present invention includes a base layer 10 , a functional layer 20 and a bonding layer 30 .

[0060] Specifically, if Figures 1-8 As shown, the metasurface structure 221 is constructed as a plurality of sub-wavelength through holes 2210 arranged in an array in the functional area, which can facilitate the formation of the metasurface structure 221 and the processing of the metasurface structure 221.

[0061] Alternatively, as Figures 4-6 As shown, the sub-wavelength through hole 2210 is a rectangular hole, a circular hole or a cross-shaped hole, which can facilitate the processing of the sub-wavelength through hole 2210 and the adjustment of the size of the sub-wavelength through hole 2210.

[0062] Further, the thickness of the metal metasurface layer 22 in the up-down direction is greater than or equal to 50 nanometers, the thickness of the metal reflection layer 12 in the up-down direction is greater than or equal to 50 nanometers, the horizontal length of the functional region is 100 micrometers-1 centimeter, and the horizontal width of the functional region is 100 micrometers-1 centimeter. Specifically, the horizontal length of the functional region is 500 micrometers-1 millimeter, the horizontal width of the functional region is 500 micrometers-1 millimeter, the thickness of the metal metasurface layer 22 in the up-down direction is 50 nanometers-1 micrometer, and the thickness of the metal reflection layer 12 is 0.1 micrometer-1 micrometer. In this way, the super-metasurface infrared narrow-band absorber 1 has a reasonable size, and the infrared narrow band can be easily absorbed.

[0063] Further, the thickness of the support layer 21 in the up-down direction is 200-500 micrometers, the horizontal length of the substrate 11 is 5 millimeters-50 millimeters, the horizontal width of the substrate 11 is 5 millimeters-50 millimeters, and the thickness of the bonding layer 30 in the up-down direction is 2-20 micrometers. The horizontal shape and size of the substrate layer 10 and the functional layer 20 are the same. In this way, the super-metasurface infrared narrow-band absorber 1 has a reasonable size, and the infrared narrow band can be easily absorbed.

[0064] More specifically, the metal reflection layer 12 and the metal metasurface layer 22 are gold material layers, silver material layers, copper material layers, or aluminum material layers. In this way, the metal metasurface layer 22 has good super-metasurface properties, and the metal reflection layer 12 has good reflection performance.

[0065] Advantageously, there is an adhesive layer between the metal reflection layer 12 and the substrate 11 and between the metal metasurface layer 22 and the support layer 21, and the adhesive layer is a chromium material layer or a titanium material layer. In this way, the metal reflection layer 12 can be easily attached to the substrate 11, and the metal metasurface layer 22 can be easily attached to the support layer 21, preventing it from falling off.

[0066] More advantageously, the bonding layer 30 is a photoresist, an optical adhesive tape, or a photosensitive polymer. In this way, the bonding layer 30 can be used to bond and connect the substrate layer 10 and the functional layer 20.

[0067] The super-metasurface infrared narrow-band absorber 1 is simulated and simulated as shown in FIG. 2. Figure 9 As shown in FIG. 2, the super-metasurface infrared narrow-band absorber 1 has an absorption peak close to 100% at the target central wavelength of 5.64 micrometers, and the absorption rate is close to 0 in the short-wave and long-wave regions deviating from the central wavelength, and the full width at half maximum is less than 50 nanometers.

[0068] The manufacturing method of the super-metasurface infrared narrow-band absorber 1 according to the above-mentioned embodiments of the present application is described below, comprising the following steps:

[0069] S1, providing a functional layer substrate 21', and forming a metal super surface layer 22 on the functional layer substrate 21';

[0070] S2. Preparing a protective layer 50 on the metal supersurface layer 22, and processing a hole 211 on the functional layer substrate 21' by photolithography and etching to obtain the support layer 21; in other words, the functional layer substrate 21' is the material before the support layer 21 is processed to form the hole 211, and the support layer 21 is obtained after the functional layer substrate 21' is processed to form the hole 211 by photolithography;

[0071] S3, removing the protective layer 50 by wet etching and dry etching to obtain the functional layer 20;

[0072] S4. Vapor-depositing a metal reflective layer 12 on the substrate 11 forms a substrate layer 10. Bonding the functional layer 20 and the substrate layer 10 together through the bonding layer 30 to obtain a metasurface infrared narrow-band absorber 1.

[0073] Specifically, the functional layer substrate 21 ′ may be cleaned before processing.

[0074] The metal super surface layer 22 can be processed by processes such as photolithography, electron beam evaporation and stripping. For example, it can be achieved by directly performing photolithography, metal deposition, stripping and other processes on the functional layer substrate 21', or it can be prepared by first depositing metal and then etching.

[0075] In step S2, the protective layer 50 may be a photoresist, and a photolithography process 211 is performed on the surface opposite the metal metasurface layer 22 on the functional layer substrate 21'. An etching mask may be determined by photolithography on the functional layer substrate 21' to prevent the support area of ​​the substrate from being etched. Subsequently, the silicon substrate is etched by a deep reactive ion etching (DRIE) process until the metasurface structure 221 on the opposite side is exposed.

[0076] In step S3 , wet etching may be used to preliminarily erode the protective layer, and then dry etching may be used to completely remove the protective layer.

[0077] In step S4 , the functional layer 20 needs to be turned upside down and then bonded to the base layer 10 .

[0078] In step S2, the protective layer 50 protects the metal super surface layer 22, thereby avoiding the problem of fracture caused by process operations such as etching of the support layer 21.

[0079] The manufacturing method of the metasurface infrared narrow-band absorber 1 according to the embodiment of the present invention can achieve infrared narrow-band absorption and has the advantages of high quality factor and good processing compatibility.

[0080] Advantageously, between steps S3 and S4, the process further includes: preparing a bonding layer 30 on the substrate 11 by spin coating, and adjusting the spin coating speed and time to adjust the thickness of the bonding layer 30. This facilitates adjustment of the thickness of the bonding layer 30 and the height of the resonant cavity 40.

[0081] Other structures and operations of the metasurface infrared narrow-band absorber 1 and the manufacturing method thereof according to the embodiment of the present invention are known to ordinary technicians in this field and will not be described in detail here.

[0082] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, illustrative uses of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0083] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the claims and their equivalents.

Claims

1. A metasurface infrared narrowband absorber, characterized in that: include: a base layer, the base layer comprising a base and a metal reflective layer provided on an upper surface of the base, the metal reflective layer being suitable for reflecting infrared rays; A functional layer, the functional layer comprising a support layer and a metal supersurface layer provided on a lower surface of the support layer, a through-hole provided in the middle portion of the support layer and penetrating the support layer in the vertical direction, the metal supersurface layer comprising a functional region and an edge region, the functional region being located inside the edge region in the horizontal direction, the functional region being provided with a supersurface structure, the supersurface structure comprising a plurality of sub-wavelength-sized through-holes penetrating the metal supersurface layer in the thickness direction, the support layer being opposite to the edge region in the vertical direction, the through-hole being opposite to the functional region in the vertical direction, and the projection of the functional region in the vertical direction being located within the metal reflective layer; A bonding layer, wherein the bonding layer is located between the base layer and the functional layer and the base layer and the functional layer are bonded together through the bonding layer, the middle portion of the bonding layer has an escape opening that passes through the bonding layer in the up-down direction, the projection of the functional area in the up-down direction is located within the escape opening, the metal super surface layer and the metal reflective layer are separated by the bonding layer to form a resonant cavity between the metal super surface layer and the metal reflective layer.

2. The metasurface infrared narrowband absorber according to claim 1, characterized in that: The metasurface structure is constructed such that a plurality of sub-wavelength-sized through holes are arranged in an array within the functional area.

3. The metasurface infrared narrowband absorber according to claim 1, characterized in that: The sub-wavelength through hole is a rectangular hole, a circular hole or a cross-shaped hole.

4. The metasurface infrared narrowband absorber according to claim 1, characterized in that: The thickness of the metal super surface layer in the up and down directions is greater than or equal to 50 nanometers, the thickness of the metal reflective layer in the up and down directions is greater than or equal to 50 nanometers, the horizontal length of the functional area is 100 micrometers-1 centimeter, and the horizontal width of the functional area is 100 micrometers-1 centimeter.

5. The metasurface infrared narrowband absorber according to claim 1, characterized in that: The thickness of the support layer in the vertical direction is 200-500 microns, the horizontal length of the substrate is 5 mm-50 mm, the horizontal width of the substrate is 5 mm-50 mm, and the thickness of the bonding layer in the vertical direction is 2-20 microns.

6. The metasurface infrared narrowband absorber according to claim 1, characterized in that: The metal reflective layer and the metal super surface layer are gold material layers, silver material layers, copper material layers or aluminum material layers.

7. The metasurface infrared narrowband absorber according to claim 1, characterized in that: An adhesion layer is provided between the metal reflective layer and the substrate and between the metal super surface layer and the support layer, and the adhesion layer is a chromium material layer or a titanium material layer.

8. The metasurface infrared narrowband absorber according to claim 1, characterized in that: The bonding layer is photoresist, optical tape or photosensitive polymer.

9. A method for manufacturing a metasurface infrared narrowband absorber according to any one of claims 1 to 8, characterized in that: The following steps are involved: S1. Providing a functional layer substrate, and forming a metal super surface layer on the functional layer substrate; S2, preparing a protective layer on the metal super surface layer, and processing the port on the functional layer substrate by photolithography and etching to obtain the supporting layer; S3, removing the protective layer by wet etching and dry etching to obtain the functional layer; S4. Evaporating the metal reflective layer on the substrate to form the substrate layer, and bonding the functional layer and the substrate layer through the bonding layer to obtain the metasurface infrared narrow-band absorber.

10. The method for manufacturing a metasurface infrared narrowband absorber according to claim 9, characterized in that: Also included between steps S3 and S4: The bonding layer is prepared on the substrate by spin coating, and the thickness of the bonding layer is adjusted by adjusting the rotation speed and time of the spin coating.

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