Semiconductor device and method of manufacturing the same

Abstract

This application provides a semiconductor device and its fabrication method, relating to the field of semiconductor technology, to solve the technical problem of poor uniformity of critical dimensions in active regions. The semiconductor device includes a substrate, on which are disposed a plurality of first active structures, a first isolation structure isolating each of the first active structures, a second active structure, and a second isolation structure. The plurality of first active structures extend along a first direction and include first active segments and second active segments. The second active structure is in direct contact with the second active segments, and the side of the second active structure facing away from the second active segments is an active boundary. A plurality of first trenches are formed within the second active structure extending in the direction of the first active structures, and the first trenches are located between the second active segments and the active boundary. The second isolation structure fills within the first trenches. The second active segments are in contact with the second active structures, and the first trenches are provided within the second active structures to improve the uniformity of the critical dimensions of the first active structures.

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