Temperature drift compensation methods and their corresponding modules, electronic devices and computer-readable storage media

Abstract

This application provides a temperature drift compensation method and its corresponding module, electronic device, and computer-readable storage medium, belonging to the technical field of infrared imaging. The method includes at least the following steps: acquiring the thermal hysteresis curve of each pixel in a photoelectric sensor and storing the characteristic parameters of the thermal hysteresis curve; predicting the on-chip temperature change trend of each pixel based on the change in the frame average or line average of the photoelectric sensor; analyzing and obtaining the magnitude of the compensation value based on the on-chip temperature of each pixel, the on-chip temperature change trend, and the characteristic parameters; and outputting a compensation signal to the readout circuit of each pixel based on the compensation value. This method avoids output interruptions caused by using baffles to isolate the photoelectric sensor, thus improving the output accuracy of uncooled infrared detectors.

Description

Technical Field

[0001] This application relates to the technical field of infrared imaging, and more specifically, to temperature drift compensation methods and corresponding modules, electronic devices, and computer-readable storage media. Background Technology

[0002] Uncooled infrared detectors consist of an optical system and a photoelectric sensor. Due to their advantages such as requiring no cooling device, small size, and low cost, they are widely used in security monitoring, temperature detection, and thermal imaging.

[0003] In existing technologies, to address the temperature drift problem of uncooled infrared detectors caused by changes in ambient temperature, temperature sensors are typically used for temperature monitoring, and signal processing algorithms are employed to correct the output signal of the infrared sensor. Correction methods include linear correction and polynomial fitting correction. These methods can alleviate the temperature drift problem of uncooled infrared detectors to some extent.

[0004] However, the existing calibration methods have certain limitations. Temperature correction typically uses temperature non-uniformity correction data stored on the sensor core, but this correction accuracy fails to meet requirements when ambient temperature changes, thus limiting the output accuracy of uncooled infrared detectors. Therefore, a new calibration method is urgently needed to improve the output accuracy of uncooled infrared detectors. Summary of the Invention

[0005] A brief overview of this application is provided below to offer a basic understanding of certain aspects thereof. However, it should be understood that this overview is not an exhaustive summary of the application, nor is it intended to identify any key or essential parts of the application, nor is it intended to limit the scope of the application. The purpose of this overview is merely to present some inventive concepts of the application in a simplified form as a prelude to the more detailed description that follows.

[0006] In view of the technical problem that the temperature drift correction accuracy of uncooled infrared detectors in the prior art is limited, the first aspect of this application provides a temperature drift compensation method, the temperature drift compensation method comprising:

[0007] Acquire the thermal hysteresis curve of each pixel in the photoelectric sensor and store the characteristic parameters of the thermal hysteresis curve;

[0008] The on-chip temperature trend of each pixel is predicted based on the changes in the frame average or line average of the uncooled infrared sensor.

[0009] The compensation value is obtained by analyzing the on-chip temperature of each pixel, the trend of the on-chip temperature change, and the feature parameters.

[0010] A compensation signal is output to the readout circuit of each pixel based on the compensation value.

[0011] Optionally, the characteristic parameters of the thermal hysteresis curve include the slope and the inflection point.

[0012] Optionally, predicting the on-chip temperature trend of each pixel based on the frame average and line average of the photoelectric sensor includes:

[0013] Read the frame average value and the row average value in each frame from the photoelectric sensor;

[0014] Set a frame mean threshold and record a first number of frames whose frame mean exceeds the frame mean threshold;

[0015] Set a line mean threshold and record the number of lines in each frame whose line mean exceeds the line mean threshold;

[0016] Set a row count threshold and compare the number of rows with the row count threshold;

[0017] Set a frame count threshold and count the second number of frames that exceed the frame average threshold, line average threshold, and line count threshold;

[0018] When the second quantity continuously exceeds the frame number threshold, the temperature change trend is predicted based on the rising and falling directions of the frame average or line average.

[0019] Optionally, obtaining the compensation value based on the on-chip temperature of the photoelectric sensor, the trend of the on-chip temperature change, and the characteristic parameters includes:

[0020] The thermal hysteresis curve is divided into multiple intervals based on the characteristic parameters. Each interval is fitted with a linear relationship between on-chip temperature and sheet resistance, and the multiple intervals correspond to multiple compensation coefficients.

[0021] Determine the interval in which the photoelectric sensor is currently operating, and determine the compensation coefficient corresponding to the interval in which the current operating state is located;

[0022] The compensation value for the frame average or line average is obtained by multiplying the deviation between the frame average value under the current working state and the frame average value corresponding to the standard interval with the compensation coefficient, or...

[0023] The compensation value of the frame mean or line mean is obtained by multiplying the deviation between the line mean in the current working state and the line mean corresponding to the standard interval with the compensation coefficient.

[0024] The compensation signal is obtained based on the relationship between the compensation value of the frame average or line average and the pixel resistance and the compensation signal.

[0025] Optionally, the temperature drift compensation method further includes:

[0026] A compensation point is provided at the drain of the field-effect transistor in any bias circuit of the readout circuit; the compensation point is configured to receive the output compensation signal.

[0027] Optionally, the compensation coefficients corresponding to each interval of the thermal hysteresis curve are calculated by the thermal hysteresis curve through slope compensation.

[0028] Optionally, the compensation signal includes any one or more combinations of voltage, current, and current duty cycle.

[0029] Secondly, this application also provides a temperature drift compensation module, which is applicable to the temperature drift compensation method provided according to any of the above embodiments. The temperature drift compensation module includes a storage unit, a prediction unit, an analysis unit, and an output unit.

[0030] The storage unit is configured with characteristic parameters of the thermal hysteresis curve of each pixel in the photoelectric sensor;

[0031] The prediction module is configured to predict the on-chip temperature change trend of each pixel based on the changes in the frame mean and line mean of the photoelectric sensor.

[0032] The analysis unit is configured to analyze and obtain the magnitude of the compensation value based on the on-chip temperature of each pixel, the trend of the on-chip temperature change, and the feature parameters.

[0033] The output unit is configured to output a compensation signal to the readout circuit of the photoelectric sensor according to the compensation value.

[0034] Optionally, the output unit may further include a current mirror or a variable resistor.

[0035] Optionally, the output unit is electrically connected to the drain of the field-effect transistor of any bias circuit in the readout circuit.

[0036] Optionally, the compensation signal includes any one or more combinations of voltage value, current value, and current duty cycle.

[0037] Thirdly, this application also provides an electronic device, including a bus, a transceiver, a memory, a processor, and a computer program stored in the memory and executable on the processor. The transceiver, the memory, and the processor are connected via the bus. When the computer program is executed by the processor, it implements the steps in the temperature drift compensation method provided according to any of the above embodiments.

[0038] Fourthly, a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the temperature drift compensation method provided according to any of the above embodiments.

[0039] The above-mentioned technical solution of this application has achieved at least the following beneficial effects:

[0040] The temperature drift compensation method provided in this application stores the characteristic parameters of the thermal hysteresis curve of each pixel in the photoelectric sensor, predicts the on-chip temperature change trend of each pixel based on the change of the frame average or line average of the photoelectric sensor, obtains the magnitude of the compensation value based on the on-chip temperature of each pixel, the on-chip temperature change trend, and the characteristic parameters of the thermal hysteresis curve, and outputs a compensation signal to the readout circuit of each pixel according to the compensation value. In this way, the influence of ambient temperature change on the pixel thermal hysteresis effect is reduced, the sensor can be calibrated when the ambient temperature changes, and the output accuracy of the uncooled infrared detector is improved. Attached Figure Description

[0041] The accompanying drawings are provided to further understand this application and are incorporated in and form a part of this specification. The drawings illustrate embodiments of this application and, together with the following description, serve to explain the principles of this application.

[0042] Figure 1 A schematic diagram of an optional process for the temperature drift compensation method provided in an embodiment of this application is shown.

[0043] Figure 2 An optional schematic diagram of the thermal hysteresis curve provided in an embodiment of this application is shown.

[0044] Figure 3 This diagram illustrates the extraction of characteristic parameters from the thermal hysteresis curve provided in an embodiment of this application.

[0045] Figure 4 A flowchart illustrating the method for predicting temperature change trends on a pixel sheet provided in an embodiment of this application is shown.

[0046] Figure 5 A schematic diagram illustrating the compensation effect of the temperature drift compensation method in the prior art is shown.

[0047] Figure 6 A schematic diagram illustrating the compensation effect of the temperature drift compensation method provided in the embodiments of this application is shown.

[0048] Figure 7 This illustration shows an optional compensation circuit corresponding to the temperature compensation method provided in the embodiments of this application.

[0049] Figure 8This illustration shows another optional compensation circuit corresponding to the temperature compensation method provided in the embodiments of this application.

[0050] Figure 9 This illustration shows another optional compensation circuit corresponding to the temperature compensation method provided in the embodiments of this application.

[0051] Figure 10 A schematic diagram of an optional temperature compensation module provided in an embodiment of this application is shown.

[0052] Figure 11 An optional schematic diagram of an electronic device provided in an embodiment of this application is shown.

[0053] The reference numerals in the figure represent:

[0054] 1110 - Bus; 1120 - Processor; 1130 - Transceiver; 1140 - Bus interface; 1150 - Memory; 1160 - User interface. Detailed Implementation

[0055] In this specification, it will also be understood that when a component (or region, layer, part, etc.) is referred to relative to other components, such as "on," "connected to," or "coupled to" other components, that component may be directly disposed on / directly connected to / directly coupled to that component, or there may be an intervening third component. Conversely, when a component (or region, layer, part, etc.) is referred to relative to other components in this specification, such as "directly" on, "directly connected to," or "directly coupled to" other components, there is no intervening component between them.

[0056] The present application will now be described more fully below with reference to the accompanying drawings, in which various embodiments are illustrated. However, the present application may be implemented in many different ways and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the present application will be exhaustive and complete, and will fully convey the scope of the present application to those skilled in the art. The same reference numerals denote the same parts throughout the drawings. Furthermore, in the drawings, the thickness, proportions, and dimensions of parts are enlarged for clarity.

[0057] The terminology used herein is for descriptive purposes only and is not intended to be limiting. Unless the context clearly indicates otherwise, the terms “a,” “an,” “the,” and “at least one” as used herein are not intended to limit the quantity but are intended to include both the singular and the plural. For example, unless the context clearly indicates otherwise, “a component” has the same meaning as “at least one component.” “At least one” should not be construed as limiting “a” or “an.” “Or” means “and / or.” The term “and / or” includes any and all combinations of one or more of the associated listed items.

[0058] It will be understood that although terms such as “first” and “second” are used herein to describe various components, these components should not be limited by these terms. These terms are used only to distinguish one component from others. For example, a first component referred to as a first component in one embodiment may be referred to as a second component in other embodiments without departing from the scope of the appended claims.

[0059] Furthermore, terms such as "below," "below," "above," and "upper" are used to describe the relationships between the components shown in the diagram. These terms can be relative concepts and are described based on the directions presented in the diagram.

[0060] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art. Terms defined in commonly used dictionaries shall be interpreted as having the same meaning as in the relevant technical context, and shall not be interpreted as having a formal meaning in an idealized or overly formal sense unless expressly defined in the specification.

[0061] The meaning of “includes” or “contains” is to specify a nature, quantity, step, operation, element, component, or combination thereof, but does not exclude other natures, quantities, steps, operations, elements, components, or combinations thereof.

[0062] This document describes embodiments with reference to cross-sectional views of schematic diagrams as idealized implementations. Thus, variations in shape relative to the illustrations are anticipated as a result of, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions shown herein, but should include deviations in shape due to, for example, manufacturing processes. For example, regions shown or described as flat may typically have rough and / or non-linear characteristics. Furthermore, acute angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to show precise shapes of the regions and are not intended to limit the scope of the claims. Terms such as “substantially,” “approximately,” “about,” etc., as used herein, are intended to include variations of ±10%, ±9%, ±8%, ±7%, ±6%, ±5%, ±4%, ±3%, ±2%, or ±1% of the stated values.

[0063] In the following description, exemplary embodiments according to this application will be described with reference to the accompanying drawings.

[0064] To address the inaccurate output of uncooled infrared detectors caused by ambient temperature variations (also known as temperature drift), existing technologies use a baffle to block the sensor and combine this with pre-stored temperature non-uniformity correction data for calibration. Specifically, when a significant temperature change causes a large drift in the uncooled infrared detector's output, the baffle falls, blocking the photoelectric sensor and allowing for recalibration. However, the falling baffle interrupts the uncooled infrared sensor's sampling, preventing continuous image output. Therefore, existing uncooled infrared detectors cannot be used in scenarios requiring high image continuity.

[0065] In view of this, embodiments of this application provide a temperature drift compensation method, such as... Figure 1 As shown, the method includes at least the following steps:

[0066] Acquire the thermal hysteresis curve of each pixel in the photoelectric sensor and store the characteristic parameters of the thermal hysteresis curve;

[0067] The on-chip temperature trend of each pixel is predicted based on the changes in frame average or line average of photoelectric sensors.

[0068] The compensation value is obtained by analyzing the on-chip temperature of each pixel, the trend of on-chip temperature change, and the characteristic parameters.

[0069] The compensation signal is output to the readout circuit of each pixel based on the compensation value.

[0070] Typically, during the heating or cooling process, the physical properties of materials (such as resistance, permeability, shape memory effect, etc.) exhibit asynchronous behavior over time, known as "hysteresis." This hysteresis can be described by a circular hysteresis curve. Figure 2 The temperature-sheet resistance curve of any pixel in the photoelectric sensor of an uncooled infrared detector is shown. This curve is a closed loop, referred to in this paper as the thermal hysteresis curve. See also Figure 2 The horizontal axis represents ambient temperature, and the vertical axis represents the sheet resistance of the pixel. For example... Figure 2 As shown, the thermal hysteresis curve of a pixel illustrates the response of the pixel's sheet resistance to changes in ambient temperature. Figure 2 As shown, curves 1 and 2 are the cooling curve and the heating curve, respectively. Cooling curve 1 shows that the pixel transitions from a metallic state to a semiconductor state as the temperature decreases; correspondingly, the pixel sheet resistance increases as the temperature decreases. Heating curve 2 shows that the pixel transitions from a semiconductor state to a metallic state as the temperature increases; correspondingly, the pixel sheet resistance decreases as the temperature increases.

[0071] Figure 3 This diagram illustrates an optional method for extracting feature parameters from a thermal hysteresis curve according to an embodiment of this application. According to an exemplary implementation of this application, the thermal hysteresis curve can be obtained offline, and its feature parameters can be stored on-chip. According to some optional implementations of this application, the feature parameters of the thermal hysteresis curve include slope and inflection point. For example... Figure 3 As shown, in an optional embodiment, the feature parameters include a first slope 11, a second slope 12, a third slope 13, a fourth slope 14, a first inflection point 15, and a second inflection point 16. The aforementioned four slopes and two inflection points are obtained by performing a linear fit on the segmented thermal hysteresis curve. In some exemplary embodiments, more feature parameters can be collected to obtain more accurate measurement results. In yet other exemplary embodiments, given the good process uniformity of the photoelectric sensor or the collection of a sufficient number of feature parameters, the feature parameters of the same thermal hysteresis curve can be used at least partially for all pixels on the same photoelectric sensor. For example, for a photoelectric sensor with good process uniformity, the photoelectric sensor can be divided, and the feature parameters of the pixel located at the geometric center of the divided area are adopted. It should be noted that different photoelectric sensors have different film compositions and different manufacturing processes, resulting in different differences in the corresponding thermal hysteresis curves. Therefore, preferably, the thermal hysteresis curve and feature parameters of each pixel are collected and stored separately.

[0072] According to an embodiment of this application, for a photoelectric sensor configured with characteristic parameters, the temperature change trend of each pixel is predicted based on the frame average and line average of the photoelectric sensor.

[0073] Specifically, such as Figure 4 As shown, the specific prediction process is as follows:

[0074] Read the frame average value and the row average value in each frame from the photoelectric sensor;

[0075] Set a frame mean threshold and record the first number of frames whose frame mean exceeds the frame mean threshold;

[0076] Set a line mean threshold and record the number of lines in each frame whose line mean exceeds the line mean threshold;

[0077] Set a row count threshold and compare the number of rows in each frame whose row mean exceeds the row mean threshold with the row count threshold; when the number of rows in each frame whose row mean exceeds the row mean threshold is greater than the row count threshold, it is considered that the increase in pixel value in that frame is too high, and the increase in value may be caused by the increase in ambient temperature.

[0078] Set a frame count threshold and count the second number of frames that exceed the frame average threshold, line average threshold, and line count threshold;

[0079] When the second quantity continuously exceeds the frame number threshold, the temperature change trend is predicted based on the rising and falling directions of the frame average or line average.

[0080] The frame mean refers to the average value of all pixel values ​​in a frame of infrared image captured within a specific time interval. The row mean refers to the average pixel value in each row of an image. For example, for a row of an image frame, the brightness or color values ​​of all pixels in that row are added together, and then divided by the total number of pixels in that row; the result is the row mean.

[0081] In some example implementations, predicting the trend of change for each cell includes at least the following steps:

[0082] Read the frame average and line average of the current frame, denoted as avg(frm) and avg(line) respectively;

[0083] Set the frame mean threshold to A, and record the number of times the frame mean avg(frm) is greater than A within the reference time.

[0084] Set the line mean threshold to B, and record the number of times the line mean avg(line) is greater than B in each frame within the reference time.

[0085] Set the line count threshold to C, and compare the number of lines in each frame within the reference time whose average line value avg(line) is greater than B. When the number of lines in each frame whose average line value is greater than B is greater than C, it is determined that the increase in pixel value in that frame is too high, and the increase in value may be caused by the increase in ambient temperature.

[0086] Set the frame count threshold to D, and count the number of frames that meet at least one of the following conditions in the next moment of the reference time: (1) the frame mean threshold is greater than A; (2) the line mean is greater than B; (3) the number of lines in each frame with a line mean greater than B is greater than C.

[0087] If, in the next moment of the reference time, at least one of the above conditions (1), (2) and (3) appears consecutively and the number exceeds D frames, it is determined that the change in the output of the photoelectric sensor is caused by the ambient temperature.

[0088] The temperature change trend of the photoelectric sensor is determined based on the direction of increase or decrease of the average line value or frame value at the next moment after the aforementioned reference time; the temperature change trend of the photoelectric sensor is consistent with the direction of increase or decrease of the average line value or frame value at the next moment after the aforementioned reference time. For example, the reference time is the time interval between consecutive frames output by the infrared detector, that is, the display duration of each frame image, also known as one frame time.

[0089] According to the embodiments of this application, obtaining the magnitude of the compensation value based on the on-chip temperature of each pixel, the trend of on-chip temperature variation, and characteristic parameter analysis specifically includes:

[0090] The thermal hysteresis curve is divided into multiple intervals based on the characteristic parameters. Each interval is fitted with a linear relationship between on-chip temperature and sheet resistance, and the multiple intervals correspond to multiple compensation coefficients.

[0091] Determine the range of the current operating state of the photoelectric sensor and determine the compensation coefficient corresponding to the range of the current operating state; that is, determine the range of the thermal hysteresis curve corresponding to the current state and the compensation coefficient corresponding to that range.

[0092] The compensation value for the frame average or line average is obtained by multiplying the deviation between the current frame average and the frame average corresponding to the standard interval by the compensation coefficient, or...

[0093] The frame mean or line mean compensation value is obtained by multiplying the deviation between the line mean in the current working state and the line mean corresponding to the standard interval with the compensation coefficient.

[0094] The compensation signal is obtained based on the relationship between the compensation value of the frame average or line average and the pixel resistance and compensation signal.

[0095] In some example implementations, when the photoelectric sensor has a 14-bit output, its output digital code ranges from 0 to 16838. By default, after optical color correction (OCC), each pixel's output value is within the range of 8192 ± 400; the frame average and line average are also around 8192. The photoelectric sensor's output full swing is 2.5V, its responsivity is 25mV / K, and a 1K change in target temperature corresponds to a digital code change of approximately 163.

[0096] According to some optional implementation methods, the magnitude of the compensation value is obtained based on the on-chip temperature of each pixel, the trend of on-chip temperature variation, and characteristic parameter analysis, specifically including:

[0097] The trend of the thermal hysteresis curve is determined based on the current temperature and the temperature change trend. Taking any pixel as an example, the state of the thermal hysteresis curve corresponding to the pixel is determined based on the current temperature of the pixel and the predicted temperature change trend, such as whether it is a cooling curve or a heating curve.

[0098] Determine the specific position of the current working state on the thermal hysteresis curve, that is, the specific interval of the thermal hysteresis curve in which the current working state is located; different intervals correspond to different compensation coefficients Z; for example, the first slope corresponds to the first interval, and the thermal hysteresis curve of the first interval is fitted to the first reference relationship: y1=k1x+b1, and the corresponding compensation coefficient is Z1; the other intervals are deduced in the same way.

[0099] Based on the offset of the frame average, the response of the pixel at the current temperature is compensated so that the response of the pixel at the current temperature satisfies the reference relationship corresponding to the thermal hysteresis curve interval of the current operating state (e.g., y1 = k1x + b1), thereby obtaining the compensation value of the frame average. It should be noted that the relationship between the frame average, pixel resistance, and compensation signal (current or voltage) can be obtained through conventional techniques in this field.

[0100] For example, the compensation coefficients corresponding to each interval of the thermal hysteresis curve are calculated by the thermal hysteresis curve through slope compensation.

[0101] According to embodiments of this application, the temperature drift compensation method provided by this application further includes outputting a compensation signal to the readout circuit based on the magnitude of the compensation value. Optionally, the compensation signal includes any one or more combinations of voltage, current, and current duty cycle.

[0102] Figure 5 A schematic diagram illustrating the compensation principle of existing temperature drift compensation methods is shown. See also... Figure 5 , Figure 5The horizontal axis represents time, and the vertical axis represents the output voltage of the photoelectric sensor. Each rectangle represents the output range of one pixel of the photoelectric sensor within one frame (i.e., a swing of 0.4V to 2.9V). The horizontal line crossing the center of the swing represents the instantaneous output of that frame (i.e., 1.65V). The shaded area within the rectangle represents the output before OCC correction. After OCC correction, under standard operating conditions where the ambient temperature does not change (e.g., room temperature 20℃), the horizontal line representing the instantaneous output of that pixel is at 1.65V, bisecting the rectangle representing the output range. When the ambient temperature changes, the output of that pixel shifts in one direction, but after OCC correction, the horizontal line representing the instantaneous output remains at 1.65V. When the ambient temperature continues to change, due to thermal hysteresis, even after OCC correction, the instantaneous output in the next frame cannot return to the center of the swing. At this point, to prevent the output of the photoelectric sensor from saturating, a baffle falls, isolating the photoelectric sensor from the incident light path, and recalibration is performed, at which point the output of the photoelectric sensor is interrupted.

[0103] Figure 6 A schematic diagram illustrating the compensation principle of the temperature drift compensation method provided in this application is shown. See also... Figure 6 The vertical axis represents the output voltage of the photoelectric sensor. Each rectangle represents the output range of a pixel in the photoelectric sensor within one frame (i.e., a swing of 0.4V to 2.9V). The horizontal line crossing the center of the swing represents the instantaneous output of that frame (i.e., 1.65V). The shaded area within the rectangle represents the output before OCC correction. After OCC correction, under standard operating conditions where the ambient temperature does not change (e.g., room temperature 20°C), the horizontal line representing the instantaneous output of that pixel is at 1.65V, dividing the rectangle representing the output range into two parts. When the ambient temperature changes, the output of that pixel shifts in one direction, but after OCC correction, the horizontal line representing the instantaneous output remains at 1.65V. When the ambient temperature continues to change, due to thermal hysteresis, even after OCC correction, the instantaneous output in the next frame cannot return to the center of the swing. At this time, the temperature change trend is predicted according to the temperature drift compensation method of this application, and compensation is performed according to the method provided in this application, so that the instantaneous output of that pixel after OCC correction gradually returns to 1.65V. Therefore, the method provided in this application can complete temperature drift compensation without the need for the baffle to fall, thus improving output continuity.

[0104] According to the embodiments of this application, such as Figures 7 to 9 As shown, the temperature drift compensation method provided in this application further includes setting a compensation point at the drain of the field-effect transistor in any bias circuit of the readout circuit; the compensation point is configured to receive the output compensation signal.

[0105] Example 1

[0106] See Figure 7 Example 1 provides an optional schematic diagram of a circuit for temperature drift compensation using the temperature drift compensation method of this application. Figure 7 In the diagram, the circuit within the dashed box on the left is the compensation circuit corresponding to the temperature drift compensation method provided in this application, and the circuit outside the dashed box on the right is the pixel readout circuit. For example... Figure 7 As shown, compensation point A receives the compensation signal from the compensation circuit. Figure 7 In the diagram, Rs is a pixel, biased by the voltage VGFID at the GFID point and transistor MN1, and the current flowing through Rs is denoted as Is; Rd is a blind pixel, biased by the voltage VGFID at the GFID point and transistor MN1. eb The voltage and transistor MP1 bias it, and the current flowing through Rd is denoted as Id. The current difference Idiff between Is and Id is amplified by transimpedance through Rg, integrated on the integrating capacitor (Cint capacitor), and finally sampled and held by the analog-to-digital converter (ADC) before being output.

[0107] During normal operation, when the ambient temperature variation does not exceed the rated operating range of the photoelectric sensor, the current flowing through Rs is equal to the current flowing through Rg, and no current flows through Rg. When the ambient temperature changes drastically, Rd comes into contact with the substrate of the photoelectric sensor, experiencing a rapid temperature change. Because of the vacuum and the low thermal conductivity of the bridge legs, the temperature change of Rs is not as drastic as that of Rd. Therefore, the current flowing through Rg will not be zero and will vary significantly. This excessive current can compress the output swing of amplifier OP2, leading to inaccurate signal measurements.

[0108] Figure 7 The dashed box on the left represents the temperature compensation circuit. As mentioned earlier, a current input compensation point A is added to the drain terminal of transistor MN2. The current received at compensation point A is denoted as Icomp. When the Icomp current flows through transistor MN2, it causes a change in the voltage at point GFID, thereby achieving the purpose of compensating for the output signal change caused by temperature variation.

[0109] The magnitude of the compensation current is equivalent to the slope compensation of the corresponding interval in the thermal hysteresis curve. The magnitude of the current adjustment can be achieved by adjusting the resistance values ​​of R1 and R2. Optionally, a set of resistors can be designed, and the current magnitude can be adjusted by connecting different resistors into the circuit.

[0110] According to the embodiments of this application, the on-chip temperature change trend is predicted based on the method provided in this application; based on the magnitude of the frame mean deviation, the temperature response in different thermal hysteresis curve intervals is compensated by superimposing compensation coefficients, so that the slope of the deviated thermal hysteresis curve returns to the slope of on-chip storage; based on the temperature change trend and range, the magnitude of the resistance change of blind pixel Rd caused by temperature change is calculated by the compensation slope; simultaneously, the bias voltage on pixel Rs is adjusted to offset the excessive Idiff caused by temperature change, so as to avoid output saturation. As the temperature of Rs gradually increases, the compensation voltage is gradually reduced to achieve the purpose of dynamic adjustment. The specific adjustment satisfies the following formula:

[0111] Idiff = Is - Id; (1)

[0112] Id = Vb / Rd; (2)

[0113] Rd=Rd0*(1+α*△T);(3)

[0114] Is = VGFID / Rs; (4)

[0115] In formulas (1) to (4), Is is the current flowing through pixel Rs; Id is the current flowing through blind pixel Rd; Vb is the voltage across blind pixel Rd; VGFID is the voltage applied across pixel Rs; α is the temperature coefficient of resistance as a function of temperature; ΔT is the change in ambient temperature; Rd0 is the initial value of Rd; and Idiff is the difference between Is and Id. By compensating for VGFID, the compensation for temperature and temperature coefficient changes on Rd is completed. Formula (3) reflects the consideration of the influence of the temperature coefficient of resistance on the resistance of blind pixel Rd during the temperature drift compensation process of this application.

[0116] It should be understood that the ambient temperature sensing in the temperature drift compensation method provided in this application can take several forms. For example, a temperature sensor can be integrated into the readout circuit. The output voltage value of the temperature sensor is sampled by an ADC, and then a digital-to-analog converter (DAC) selects which resistor from R1 or R2 to connect to the circuit. Alternatively, the average frame value of an image can be detected, a certain threshold can be set, and the temperature compensation current can be adjusted when the value exceeds the threshold. Predicting the on-chip temperature change trend can optionally be done using an on-chip temperature sensor; when the temperature exceeds a certain range, system parameters can be corrected. However, this method carries the risk of detection lag, which can affect the smoothness of the output when output saturation occurs.

[0117] Example 2

[0118] See Figure 8Example 2 provides another optional schematic diagram of a circuit for temperature drift compensation using the temperature drift compensation method of this application. Figure 8 In the image, the dashed box on the left shows the temperature drift compensation circuit corresponding to the temperature drift compensation method of this application. Compared to... Figure 7 , Figure 8 The temperature drift compensation circuit provided in the middle and Figure 7 The principle of the temperature drift compensation circuit provided in the article is similar, the difference being... Figure 8 The temperature drift compensation circuit also includes a current mirror array. For example... Figure 8 As shown, the magnitude of the compensation current Icomp output by the temperature drift compensation circuit is achieved by adjusting the variable resistor R1 and / or R2 and / or the amplification factor of the current mirror array. It is not difficult to understand... Figure 8 The temperature drift compensation circuit generates a current source, but it is not directly connected to compensation point A. Instead, it is indirectly connected to compensation point A through at least one current mirror structure. In this way, the compensation current is adjusted by the current mirror structure to prevent compensation point A from receiving excessive current.

[0119] Example 3

[0120] See Figure 9 Example 3 provides another optional schematic diagram of a circuit for temperature drift compensation using the temperature drift compensation method of this application. Unlike... Figure 7 and Figure 8 The approach used in this paper is to compensate using current Icomp. Figure 9 A method for compensation via voltage is provided. Figure 9 Circuits 1, 2, and 3 are shown. Circuit 1 is a pixel bias circuit; circuit 2 is a circuit for implementing voltage compensation points; and circuit 3 is an optional circuit for adjusting the current duty cycle of switch Sw4 in circuit 2.

[0121] For circuit 1, VGFID is compensated by capacitor C1 to achieve temperature drift compensation, which includes two stages. Specifically, in the first stage, switch Sw1 is closed, switch Sw2 is closed, and Sw3 is grounded. At this time, the bias circuit on the left side of circuit 1 charges capacitor C1 through amplifier OP1. In the second stage, switch Sw1 is closed, switch Sw2 is closed, and Sw3 is switched to voltage compensation point B. At this time, the voltage at voltage compensation point B is superimposed on capacitor C1 to achieve voltage compensation at the GFID point.

[0122] Figure 9The voltage adjustment of voltage compensation point D can be achieved through circuit 2. Referring to circuit 2, the voltage of voltage compensation point B can be adjusted in three ways. For example, using the current source generating circuit R as adjustment point 1, the voltage of the voltage compensation point is changed by adjusting the output current of the current source generating circuit. For example, the current source generating circuit includes a resistor array, and the output current of the current source generating circuit is set by selecting different resistors in the resistor array. Another example is using a mirror current source as adjustment point 2, and the current in circuit 2 is set by adjusting the amplification factor of the mirror current source. Yet another example is using switch Sw4 as adjustment point 3, and the voltage of compensation point B is adjusted by adjusting the duty cycle of switch Sw4. The larger the duty cycle of switch Sw4, the longer the compensation current time, and the larger the compensation voltage obtained at compensation point B. Figure 9 Circuit 3 in the diagram illustrates an optional duty cycle generation circuit. A comparator is introduced in circuit 3, using the output of a temperature sensor or the frame average (generated by a DAC) as its input. The duty cycle of switch Sw4 is adjusted by the high and low levels output by the comparator. Exemplarily, the comparator in circuit 3 can serve as adjustment point 4, providing a fourth adjustment method for compensation point voltage regulation. Optionally, the comparator includes a ramp-adjustable ramp generator, the ramp magnitude of which can serve as adjustment point 4.

[0123] The above text combined Figures 1 to 9 The present application describes in detail the temperature drift compensation method provided in the embodiments. This method can also be implemented by a corresponding device. The following describes the method in conjunction with... Figure 10 The temperature drift compensation module provided in the embodiments of this application will be described in detail.

[0124] This application embodiment also provides a temperature drift compensation module, which includes a storage unit, a prediction unit, an analysis unit, and an output unit. The storage unit stores characteristic parameters of the thermal hysteresis curve of each pixel in the photoelectric sensor; the prediction module is configured to predict the on-chip temperature change trend of each pixel based on changes in the frame average or line average of the photoelectric sensor; the analysis unit is configured to analyze and obtain the magnitude of the compensation value based on the on-chip temperature of each pixel, the on-chip temperature change trend, and the characteristic parameters; and the output unit is configured to output a compensation signal to the readout circuit of the photoelectric sensor based on the compensation value.

[0125] According to an embodiment of this application, the temperature drift compensation module further includes a temperature sensor for acquiring the on-chip temperature of the photoelectric sensor. Optionally, the output unit includes a current mirror or a variable resistor. Optionally, the output unit is configured to be electrically connected to the drain of a field-effect transistor in any bias circuit of the photoelectric sensor's readout circuit. Further optionally, the compensation signal includes any one or more combinations of voltage, current, and current duty cycle.

[0126] In addition, this application also provides an electronic device, including a bus, a transceiver, a memory, a processor, and a computer program stored in the memory and executable on the processor. The transceiver, the memory, and the processor are connected via a bus. When the computer program is executed by the processor, it implements the various processes of the temperature drift compensation method embodiments provided in any of the above embodiments and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0127] For details, see Figure 11 As shown in the figure, this application embodiment also provides an electronic device, which includes a bus 1110, a processor 1120, a transceiver 1130, a bus interface 1140, a memory 1150 and a user interface 1160.

[0128] In this embodiment of the application, the electronic device further includes: a computer program stored in the memory 1150 and executable on the processor 1120, wherein the computer program, when executed by the processor 1120, performs the following steps:

[0129] Acquire the thermal hysteresis curve of each pixel in the photoelectric sensor and store the characteristic parameters of the thermal hysteresis curve;

[0130] The on-chip temperature trend of each pixel is predicted based on the changes in frame average or line average of photoelectric sensors.

[0131] The compensation value is obtained by analyzing the on-chip temperature of each pixel, the trend of on-chip temperature change, and the characteristic parameters.

[0132] A compensation signal is output to the readout circuit of each pixel based on the compensation value.

[0133] Transceiver 1130 is used to receive and send data under the control of processor 1120.

[0134] In this embodiment of the application, the bus architecture (represented by bus 1110) may include any number of interconnected buses and bridges, and bus 1110 connects various circuits including one or more processors represented by processor 1120 and memory represented by memory 1150.

[0135] Bus 1110 represents one or more of several types of bus architectures, including memory buses and memory controllers, peripheral buses, Accelerated Graphics Port (AGP), processors, or local buses using any bus architecture from various bus architectures. As an example and not a limitation, such architectures include: Industry Standard Architecture (ISA) buses, Micro Channel Architecture (MCA) buses, Enhanced ISA (EISA) buses, Video Electronics Standards Association (VESA) buses, and Peripheral Component Interconnect (PCI) buses.

[0136] The processor 1120 can be an integrated circuit chip with signal processing capabilities. In implementation, the steps of the above method embodiments can be completed by integrated logic circuits in the processor hardware or by instructions in software form. The processors mentioned above include: general-purpose processors, central processing units (CPUs), network processors (NPs), digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), complex programmable logic devices (CPLDs), programmable logic arrays (PLAs), microcontroller units (MCUs) or other programmable logic devices, discrete gates, transistor logic devices, and discrete hardware components. They can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this application. For example, the processor can be a single-core processor or a multi-core processor, and the processor can be integrated on a single chip or located on multiple different chips.

[0137] Processor 1120 can be a microprocessor or any conventional processor. The method steps disclosed in the embodiments of this application can be directly executed by a hardware decoding processor, or executed by a combination of hardware and software modules in the decoding processor. The software modules can reside in readable storage media known in the art, such as Random Access Memory (RAM), Flash Memory, Read-Only Memory (ROM), Programmable Read-Only Memory (PROM), Erasable Programmable Read-Only Memory (EPROM), registers, etc. The readable storage medium is located in memory, and the processor reads information from the memory and, in conjunction with its hardware, completes the steps of the above method.

[0138] Bus 1110 can also connect various other circuits, such as peripheral devices, voltage regulators, or power management circuits. Bus interface 1140 provides an interface between bus 1110 and transceiver 1130, all of which are well known in the art. Therefore, the embodiments of this application will not be described further.

[0139] Transceiver 1130 can be a single element or multiple elements, such as multiple receivers and transmitters, providing a unit for communicating with various other devices over a transmission medium. For example, transceiver 1130 receives external data from other devices, and transceiver 1130 is used to send data processed by processor 1120 to other devices. Depending on the nature of the computer system, a user interface 1160 may also be provided, such as a touchscreen, physical keyboard, monitor, mouse, speaker, microphone, trackball, joystick, or stylus.

[0140] It should be understood that, in this embodiment of the application, memory 1150 may further include memory remotely configured relative to processor 1120, and this remotely configured memory may be connected to a server via a network. One or more portions of the aforementioned network may be an ad hoc network, intranet, extranet, virtual private network (VPN), local area network (LAN), wireless local area network (WLAN), wide area network (WAN), wireless wide area network (WWAN), metropolitan area network (MAN), Internet, public switched telephone network (PSTN), ordinary old-style telephone service (POTS), cellular telephone network, wireless network, Wi-Fi network, and combinations of two or more of the aforementioned networks. For example, cellular telephone networks and wireless networks can be Global System for Mobile Communications (GSM), Code Division Multiple Access (CDMA), WiMAX, General Packet Radio Service (GPRS), Wideband Code Division Multiple Access (WCDMA), Long Term Evolution (LTE), LTE Frequency Division Duplex (FDD), LTE Time Division Duplex (TDD), Advanced Long Term Evolution (LTE-A), Universal Mobile Telecommunications System (UMTS), Enhanced Mobile Broadband (eMBB), Massive Machine Type Communication (mMTC), Ultra Reliable Low Latency Communications (uRLLC), etc.

[0141] It should be understood that the memory 1150 in the embodiments of this application may be volatile memory or non-volatile memory, or may include both volatile memory and non-volatile memory. Non-volatile memory includes: read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory.

[0142] Volatile memory includes random access memory (RAM), which serves as an external cache. By way of example, but not limitation, many forms of RAM are available, such as static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous linked dynamic random access memory (Synchlink DRAM, SLDRAM), and direct memory bus RAM (DRRAM). The memory 1150 of the electronic device described in this application embodiment includes, but is not limited to, the above and any other suitable types of memory.

[0143] In this embodiment, memory 1150 stores the following elements of operating system 1151 and application 1152: executable modules, data structures, or subsets thereof, or extended sets thereof.

[0144] Specifically, the operating system 1151 includes various system programs, such as a framework layer, a core library layer, and a driver layer, used to implement various basic business functions and handle hardware-based tasks. The application program 1152 includes various applications, such as a media player and a browser, used to implement various application functions. Programs implementing the methods of the embodiments of this application may be included in the application program 1152. The application program 1152 includes applets, objects, components, logic, data structures, and other computer system executable instructions that perform specific tasks or implement specific abstract data types.

[0145] In addition, this application also provides a computer-readable storage medium storing a computer program thereon. When the computer program is executed by a processor, it implements the various processes of the above-described temperature drift compensation method embodiments and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0146] Specifically, when a computer program is executed by a processor, it can perform the following steps:

[0147] Acquire the thermal hysteresis curve of each pixel in the photoelectric sensor and store the characteristic parameters of the thermal hysteresis curve;

[0148] The on-chip temperature trend of each pixel is predicted based on the changes in frame average or line average of photoelectric sensors.

[0149] The compensation value is obtained by analyzing the on-chip temperature of each pixel, the trend of on-chip temperature change, and the characteristic parameters.

[0150] A compensation signal is output to the readout circuit of each pixel based on the compensation value.

[0151] Computer-readable storage media include: permanent and non-permanent, transient and non-transient, removable and non-removable media, which are tangible devices capable of retaining and storing instructions for use by an instruction execution device. Computer-readable storage media include: electronic storage devices, magnetic storage devices, optical storage devices, electromagnetic storage devices, semiconductor storage devices, and any suitable combination thereof. Computer-readable storage media include: phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), non-volatile random access memory (NVRAM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, optical disc read-only memory (CD-ROM), digital versatile optical disc (DVD) or other optical storage, magnetic tape storage, magnetic disk storage or other magnetic storage devices, memory sticks, mechanical encoding devices (e.g., punched cards or raised structures in grooves on which instructions are recorded), or any other non-transfer medium that can be used to store information accessible by a computing device. As defined in the embodiments of this application, computer-readable storage media do not include temporary signals themselves, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through waveguides or other transmission media (e.g., light pulses passing through fiber optic cables), or electrical signals transmitted through wires.

[0152] In the several embodiments provided in this application, it should be understood that the disclosed apparatus, electronic devices, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed may be indirect coupling or communication connection through some interfaces, devices, or units, or it may be an electrical, mechanical, or other form of connection.

[0153] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; they may be located in one place or distributed across multiple network units. Some or all of these units can be selected to solve the problems addressed by the embodiments of this application, depending on actual needs.

[0154] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0155] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solutions of the embodiments of this application, in essence, or the parts that contribute to the prior art, or all or part of the technical solutions, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (including: a personal computer, a server, a data center, or other network device) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media listed above that can store program code.

[0156] In summary, the temperature drift compensation method provided in this application addresses the thermal hysteresis effect of pixels on a photoelectric sensor by acquiring the thermal hysteresis curve of each pixel and storing its characteristic parameters. It predicts the on-chip temperature change trend of each pixel based on the changes in the frame average or line average of the photoelectric sensor. Based on the on-chip temperature of each pixel, its change trend, and the characteristic parameters of the thermal hysteresis curve, it analyzes and obtains the magnitude of the compensation value. Based on the compensation value, it outputs a compensation signal to the readout circuit of each pixel. This method suppresses output saturation caused by the thermal hysteresis effect, eliminates the need to isolate the photoelectric sensor from incident radiation by dropping a baffle, thus avoiding image interruption caused by frequent baffle drops and ensuring continuous output from the uncooled infrared detector.

[0157] The above description is merely a specific implementation of the embodiments of this application, but the protection scope of the embodiments of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the embodiments of this application should be included within the protection scope of the embodiments of this application. Therefore, the protection scope of the embodiments of this application should be determined by the protection scope of the claims.

Claims

1. A temperature drift compensation method, applicable to uncooled infrared detectors, characterized in that, The temperature drift compensation method includes: Acquire the thermal hysteresis curve of each pixel in the photoelectric sensor and store the characteristic parameters of the thermal hysteresis curve; The on-chip temperature variation trend of each pixel is predicted based on the changes in the frame average and / or line average of the photoelectric sensor. The compensation value is obtained by analyzing the on-chip temperature of each pixel, the trend of the on-chip temperature change, and the feature parameters. A compensation signal is output to the readout circuit of each pixel based on the compensation value.

2. The temperature drift compensation method according to claim 1, characterized in that, The characteristic parameters of the thermal hysteresis curve include slope and inflection point.

3. The temperature drift compensation method according to claim 1, characterized in that, The prediction of the on-chip temperature variation trend of each pixel based on the frame average and / or line average of the photoelectric sensor includes: Read the frame average value and the row average value in each frame from the photoelectric sensor; Set a frame mean threshold and record a first number of frames whose frame mean exceeds the frame mean threshold; Set a line mean threshold and record the number of lines in each frame whose line mean exceeds the line mean threshold; Set a row count threshold and compare the number of rows with the row count threshold; Set a frame count threshold and count the second number of frames that exceed the frame average threshold, line average threshold, and line count threshold; When the second quantity continuously exceeds the frame number threshold, the temperature change trend is predicted based on the rising and falling directions of the frame average or line average.

4. The temperature drift compensation method according to claim 1, characterized in that, The step of obtaining the compensation value based on the on-chip temperature of the photoelectric sensor, the trend of the on-chip temperature change, and the characteristic parameters includes: The thermal hysteresis curve is divided into multiple intervals based on the characteristic parameters. Each interval is fitted with a linear relationship between on-chip temperature and sheet resistance, and the multiple intervals correspond to multiple compensation coefficients. Determine the interval in which the photoelectric sensor is currently operating, and determine the compensation coefficient corresponding to the interval in which the current operating state is located; The compensation value for the frame average or line average is obtained by multiplying the deviation between the frame average value under the current working state and the frame average value corresponding to the standard interval with the compensation coefficient, or... The compensation value of the frame mean or line mean is obtained by multiplying the deviation between the line mean in the current working state and the line mean corresponding to the standard interval with the compensation coefficient. The compensation signal is obtained based on the relationship between the compensation value of the frame average or line average and the pixel resistance and the compensation signal.

5. The temperature drift compensation method according to claim 1, characterized in that, The temperature drift compensation method also includes: A compensation point is provided at the drain of the field-effect transistor in any bias circuit of the readout circuit; the compensation point is configured to receive the output compensation signal.

6. The temperature drift compensation method according to claim 1, characterized in that, The compensation coefficients corresponding to each interval of the thermal hysteresis curve are calculated by the thermal hysteresis curve through slope compensation.

7. The temperature drift compensation method according to claim 1 or 4, characterized in that, The compensation signal includes any one or more combinations of voltage, current, and current duty cycle.

8. A temperature drift compensation module, applicable to the temperature drift compensation method according to any one of claims 1 to 7, characterized in that, The temperature drift compensation module includes a storage unit, a prediction unit, an analysis unit, and an output unit; The storage unit is configured with characteristic parameters of the thermal hysteresis curve of each pixel in the photoelectric sensor; The prediction unit is configured to predict the on-chip temperature change trend of each pixel based on the change in frame mean or line mean of the photoelectric sensor. The analysis unit is configured to analyze and obtain the magnitude of the compensation value based on the on-chip temperature of each pixel, the trend of the on-chip temperature change, and the feature parameters. The output unit is configured to output a compensation signal to the readout circuit of the photoelectric sensor according to the compensation value.

9. The temperature drift compensation module according to claim 8, characterized in that, The output unit also includes a current mirror or a variable resistor.

10. The temperature drift compensation module according to claim 8, characterized in that, The output unit is electrically connected to the drain of the field-effect transistor in any bias circuit of the readout circuit.

11. The temperature drift compensation module according to claim 8, characterized in that, The compensation signal includes any one or more combinations of voltage value, current value, and current duty cycle.

12. An electronic device, characterized in that, The device includes a bus, a transceiver, a memory, a processor, and a computer program stored in the memory and executable on the processor. The transceiver, the memory, and the processor are connected via the bus. When the computer program is executed by the processor, it implements the steps of the temperature drift compensation method according to any one of claims 1-7.

13. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the steps of the temperature drift compensation method according to any one of claims 1-7.

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