A method for checking the size of a design process migration device

Abstract

The present invention provides a method for checking the size of a design process migration device, and relates to the technical field of process migration device size accuracy detection. The specific steps include: collecting geometric parameters, alignment accuracy parameters and temperature parameters of the device size after migration, wherein the geometric parameters include the width of metal lines, the distance between adjacent lines and the diameter of through holes, the alignment accuracy parameters include the ratio of the overlapping area of ​​the metal layer and the through hole to the total area of ​​the through hole, and the alignment accuracy between different layers, and the temperature parameters include the thermal expansion coefficient and the temperature variation range. The present invention can avoid the accuracy error caused by collecting and analyzing a single parameter by collecting and processing data of multiple related parameters that affect the device size accuracy after migration, and collects parameters from different aspects to evaluate the device size accuracy after process migration, thereby improving the accuracy of checking the device size after process migration.

Description

Technical Field

[0001] The invention relates to the technical field of dimensional accuracy detection of process migration devices, and in particular to a method for checking the dimensions of a design process migration device. Background Art

[0002] Design process migration refers to the process of migrating the design of semiconductor devices from one process node to another. This process involves changes at multiple levels, including device size, material properties, manufacturing process, etc. The migration of device size is a key link because it directly affects the performance, reliability and manufacturing cost of the device. In the field of semiconductor manufacturing, process migration is a common but complex process. This process requires ensuring that the size and accuracy of the migrated device remain within an acceptable range to avoid performance degradation or manufacturing failure.

[0003] However, in existing designs, traditional process migration methods often lack comprehensive evaluation of multiple key parameters (such as geometric parameters, alignment accuracy parameters, and temperature parameters), making it difficult to ensure the dimensional accuracy of the device after migration. In addition, existing evaluation methods usually rely on the analysis of a single parameter and lack the analysis and processing of the mutual influence between multiple parameters, which affects the dimensional accuracy and efficiency of process migration.

[0004] Based on this, the present application designs and improves a method for inspecting the size of designed process migration devices, which can improve the inspection accuracy of device size after process migration by collecting and processing multiple related parameters that affect the size accuracy of devices after migration, avoiding the accuracy error caused by collecting a single parameter.

[0005] The above information disclosed in this Background section is only for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not constitute the prior art that is already known to one of ordinary skill in the art. Summary of the invention

[0006] The object of the present invention is to provide a method for checking the size of a design process migration device to solve the problems raised in the above background technology.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] A method for checking the size of a design process migration device, the specific steps comprising:

[0009] S1. Collecting geometric parameters, alignment accuracy parameters and temperature parameters of the device size after migration, wherein the geometric parameters include the width of the metal line, the distance between adjacent lines and the diameter of the through hole, the alignment accuracy parameters include the ratio of the overlapping area of ​​the metal layer and the through hole to the total area of ​​the through hole, and the alignment accuracy between different layers, and the temperature parameters include the thermal expansion coefficient and the temperature variation range;

[0010] S2. Process the collected data of the width of the metal lines, the distance between adjacent lines, and the diameter of the through-hole, and perform correlation analysis to generate a size coefficient for characterizing the device after migration; process the data of the ratio of the overlapping area of ​​the metal layer and the through-hole to the total area of ​​the through-hole, and the alignment between different layers, and perform correlation analysis to generate a precision coefficient for characterizing the device after migration; process the data of the thermal expansion coefficient and the temperature variation range, and perform correlation analysis to generate a temperature influence coefficient;

[0011] S3. Process the generated size coefficient, precision coefficient and temperature influence coefficient, perform correlation analysis, generate a process migration adaptability coefficient, and compare the process migration adaptability coefficient with the adaptability coefficient threshold;

[0012] S4. Based on the comparison results, evaluate the device dimensional accuracy after process migration.

[0013] Furthermore, the collected data of the width of the metal lines, the distance between adjacent lines, and the diameter of the through-hole are processed and subjected to correlation analysis to generate a size coefficient for characterizing the device after migration, according to the following formula:

[0014]

[0015] in, is the size factor of the device after migration, is the width of the metal line, is the maximum value of the width of the metal line, is the minimum width of the metal line, is the distance between adjacent lines, is the maximum distance between adjacent lines, is the minimum distance between adjacent lines, is the diameter of the through hole, is the maximum value of the through hole diameter, is the minimum value of the through hole diameter, is the proportional coefficient of the width of the metal line, is the proportional coefficient of the distance between adjacent lines, is the proportionality factor of the through hole diameter, ,and .

[0016] Furthermore, the alignment accuracy between different layers is obtained according to the following formula:

[0017]

[0018]

[0019] The position of the reference layer is and , the position of the layer to be aligned is and , the formula is as follows:

[0020]

[0021] The maximum allowed offset is and , is the alignment accuracy between different layers, Between 0 and 1, where 0 means completely misaligned and 1 means completely aligned.

[0022] Furthermore, the total area of ​​the through hole is obtained according to the following formula:

[0023]

[0024] in, is the total area of ​​the through hole, is the diameter of the through hole;

[0025] The ratio of the overlapping area of ​​the metal layer and the through hole is as follows:

[0026]

[0027] in, is the overlapping area between the metal layer and the through hole, is the center distance between the metal layer and the through hole, is the radius of the metal layer, , is the diameter of the metal layer, is the radius of the through hole, ;

[0028] Get the ratio of the overlap area between the metal layer and the through hole to the total through hole area, based on the following formula:

[0029]

[0030] in, It is the ratio of the overlapping area of ​​the metal layer and the through hole to the total area of ​​the through hole.

[0031] Furthermore, the ratio of the overlapping area between the metal layer and the through hole to the total area of ​​the through hole and the alignment between different layers are processed and correlation analyzed to generate the accuracy coefficient for characterizing the device after migration, based on the following formula:

[0032]

[0033] in, is the accuracy coefficient after device migration, is the proportionality factor of the alignment accuracy between different layers, is the ratio coefficient of the overlapping area between the metal layer and the through hole.

[0034] Furthermore, the thermal expansion amount within each temperature change range is obtained according to the following formula:

[0035]

[0036] in, is the thermal expansion within the temperature range, is the coefficient of thermal expansion, is the corresponding temperature variation range;

[0037] The temperature influence coefficient is determined by regression analysis, using a linear regression model with the following formula:

[0038]

[0039] in, is the temperature influence coefficient, is the error term.

[0040] Furthermore, the generated size coefficient, precision coefficient and temperature influence coefficient are subjected to data processing and correlation analysis to generate the process migration adaptability coefficient, based on the following formula:

[0041]

[0042] in, is the process migration adaptability coefficient, is the proportionality coefficient of the temperature influence coefficient, is the proportionality coefficient of the size factor after device migration, is the proportionality factor of the alignment accuracy between different layers.

[0043] Furthermore, the process migration adaptability coefficient is compared with the adaptability coefficient threshold to evaluate the device size accuracy after process migration. The process is as follows:

[0044] when , then the size change of the device after migration exceeds the allowable range, and the process migration accuracy does not meet the requirements;

[0045] when , then the size change of the device after migration is within the allowable range, and the process migration accuracy meets the requirements;

[0046] in, It is a preset adaptability coefficient threshold used to evaluate the accuracy of device dimensions after process migration.

[0047] Compared with the prior art, the present invention has the following beneficial effects:

[0048] The present invention collects geometric parameters and alignment accuracy parameters and temperature parameters of the device size after migration, processes and analyzes the collected width of the metal line, the distance between adjacent lines and the diameter of the through hole, generates a size coefficient for characterizing the device after migration, processes and analyzes the ratio of the overlapping area of ​​the metal layer and the through hole to the total area of ​​the through hole, and the alignment between different layers, generates a precision coefficient for characterizing the device after migration, processes and analyzes the thermal expansion coefficient and the temperature variation range, generates a temperature influence coefficient, processes and analyzes the generated size coefficient, precision coefficient and temperature influence coefficient, generates a process migration adaptability coefficient, compares the process migration adaptability coefficient with the adaptability coefficient threshold, and evaluates the device size accuracy after process migration. Therefore, by collecting and processing multiple related parameters that affect the device size accuracy after migration, the accuracy error caused by collecting and analyzing a single parameter can be avoided, and the parameters of different aspects are collected to evaluate the device size accuracy after process migration, which can improve the accuracy of checking the device size after process migration. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figure 1 It is a schematic diagram of the overall method flow of the present invention. DETAILED DESCRIPTION

[0050] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments.

[0051] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the present invention should be understood by people with ordinary skills in the field to which the present invention belongs. The words "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0052] Example:

[0053] See also Figure 1 , the present invention provides a technical solution:

[0054] A method for checking the size of a design process migration device, the specific steps comprising:

[0055] S1. Collecting geometric parameters, alignment accuracy parameters and temperature parameters of the device size after migration, wherein the geometric parameters include the width of the metal line, the distance between adjacent lines and the diameter of the through hole, the alignment accuracy parameters include the ratio of the overlapping area of ​​the metal layer and the through hole to the total area of ​​the through hole, and the alignment accuracy between different layers, and the temperature parameters include the thermal expansion coefficient and the temperature variation range;

[0056] S2. Process the collected data of the width of the metal lines, the distance between adjacent lines, and the diameter of the through-hole, and perform correlation analysis to generate a size coefficient for characterizing the device after migration; process the data of the ratio of the overlapping area of ​​the metal layer and the through-hole to the total area of ​​the through-hole, and the alignment between different layers, and perform correlation analysis to generate a precision coefficient for characterizing the device after migration; process the data of the thermal expansion coefficient and the temperature variation range, and perform correlation analysis to generate a temperature influence coefficient;

[0057] S3. Process the generated size coefficient, precision coefficient and temperature influence coefficient, perform correlation analysis, generate a process migration adaptability coefficient, and compare the process migration adaptability coefficient with the adaptability coefficient threshold;

[0058] S4. Based on the comparison results, evaluate the device dimensional accuracy after process migration.

[0059] In this embodiment, the changes in the width of the metal lines, the distance between adjacent lines, and the diameter of the through hole after the device migration indicate that the dimensional accuracy of the device has changed after the device migration. The specific reasons are as follows:

[0060] During the device migration process, the thermal expansion coefficient of the material will affect the dimensional stability of the device at different temperatures. The change in the thermal expansion coefficient will cause the width of the metal lines, the distance between adjacent lines, and the diameter of the through-hole to change with temperature, causing deviations in the width of the metal lines, the distance between adjacent lines, and the diameter of the through-hole, which in turn will cause changes in the accuracy of the lithography and etching processes.

[0061] The alignment accuracy between different layers will also affect the dimensional accuracy of the device. At the same time, insufficient alignment accuracy will cause the ratio of the overlapping area of ​​the metal layer and the through hole to the total area of ​​the through hole to change, thereby affecting the dimensional accuracy of the device.

[0062] During the device migration process, changes in ambient temperature will affect the physical properties of the material, causing thermal expansion or contraction of the material, thereby affecting the dimensional accuracy of the device.

[0063] In this embodiment, the measurement method of the width of the metal line, the distance between adjacent lines, the diameter of the through hole, the radius of the metal layer, and the center distance between the metal layer and the through hole is as follows:

[0064] Use a scanning electron microscope or an optical microscope to measure the width of the metal lines, the distance between adjacent lines, the diameter of the through-hole, the radius of the metal layer, and the center distance between the metal layer and the through-hole. Then, based on the width of the metal lines, the distance between adjacent lines, and the diameter of the through-hole, obtain the size factor of the device after migration. Use the center distance between the metal layer and the through-hole, the radius of the metal layer, and the radius of the through-hole to obtain the ratio of the overlapping area between the metal layer and the through-hole.

[0065] Use a thermal dilatometer to measure the thermal expansion coefficient. Place the material sample in the thermal dilatometer. Through the heating and cooling process, measure the curve of the material length changing with temperature. Use a temperature sensor to measure the temperature change range. Install the temperature sensor in the device working environment, record the temperature change range of the device under different working conditions, and use a linear regression model to calculate the thermal expansion coefficient.

[0066] On the basis of the above embodiment, the collected width of the metal line, the distance between adjacent lines and the diameter of the through hole are processed and correlation analyzed to generate a size coefficient for characterizing the device after migration, according to the following formula:

[0067]

[0068] Among them, among them, is the size factor of the device after migration, is the width of the metal line, is the maximum value of the width of the metal line, is the minimum width of the metal line, is the distance between adjacent lines, is the maximum distance between adjacent lines, is the minimum distance between adjacent lines, is the diameter of the through hole, is the maximum value of the through hole diameter, is the minimum value of the through hole diameter, is the proportional coefficient of the width of the metal line, is the proportional coefficient of the distance between adjacent lines, is the proportionality factor of the through hole diameter, ,and .

[0069] Standardizing the width of metal lines, the distance between adjacent lines, and the diameter of through holes ensures that parameters of different dimensions can be compared on the same scale. By mapping all parameters to the range of [0, 1], the difficulty of comparison caused by different dimensions is avoided. Through weighted summation, the formula comprehensively considers the influence of all parameters to obtain a comprehensive size coefficient.

[0070] The width of metal lines directly affects their resistance and current carrying capacity. Wider lines can reduce resistance and increase current carrying capacity, thus affecting device performance and reliability. The distance between adjacent lines affects crosstalk and electromagnetic interference. A smaller distance will increase crosstalk and affect signal quality. The diameter of the via affects interlayer connection and signal transmission. Larger vias can provide better connections but may take up more space. Therefore, the width of the metal lines has the greatest impact on the size factor of the device after migration because it is directly related to resistance, current carrying capacity, heat distribution and signal integrity. The distance between adjacent lines has the second greatest impact because it is related to crosstalk, electromagnetic interference and manufacturing process. The diameter of the via has a relatively small impact and is mainly related to interlayer connection and signal transmission. Therefore, .

[0071] Based on the above embodiment, the alignment accuracy between different layers is obtained according to the following formula:

[0072]

[0073]

[0074] Among them, the location of the target layer (reference layer) is and , the position of the layer to be aligned is and , the formula is as follows:

[0075]

[0076] The maximum allowed offset is and , is the alignment accuracy between different layers, Between 0 and 1, where 0 means completely misaligned and 1 means completely aligned.

[0077] Based on the above embodiment, the total area of ​​the through hole is obtained according to the following formula:

[0078]

[0079] in, is the total area of ​​the through hole, is the diameter of the through hole.

[0080] The ratio of the overlapping area of ​​the metal layer and the through hole is as follows:

[0081]

[0082] in, is the overlapping area between the metal layer and the through hole, is the center distance between the metal layer and the through hole, is the radius of the metal layer, , is the diameter of the metal layer, is the radius of the through hole, .

[0083] Get the ratio of the overlap area between the metal layer and the through hole to the total through hole area, based on the following formula:

[0084]

[0085] in, It is the ratio of the overlapping area of ​​the metal layer and the through hole to the total area of ​​the through hole.

[0086] The ratio of the overlap area between the metal layer and the through hole to the total area of ​​the through hole and the alignment between different layers are processed and correlated to generate the accuracy coefficient used to characterize the device after migration. The formula is as follows:

[0087]

[0088] in, is the accuracy coefficient after device migration, is the proportionality factor of the alignment accuracy between different layers, is the ratio coefficient of the overlapping area between the metal layer and the through hole.

[0089] Based on the above embodiment, the thermal expansion amount in each temperature change range is obtained according to the following formula:

[0090]

[0091] in, is the thermal expansion within the temperature range, is the coefficient of thermal expansion, is the corresponding temperature variation range.

[0092] The temperature influence coefficient can be determined by regression analysis, using a linear regression model with the following formula:

[0093]

[0094] in, is the temperature influence coefficient, is the error term.

[0095] On the basis of the above embodiment, the generated size coefficient, precision coefficient and temperature influence coefficient are subjected to data processing and correlation analysis to generate the process migration adaptability coefficient, according to the following formula:

[0096]

[0097] in, is the process migration adaptability coefficient, is the proportionality coefficient of the temperature influence coefficient, is the proportionality coefficient of the size factor after device migration, is the proportionality factor of the alignment accuracy between different layers.

[0098] On the basis of the above embodiment, the process migration adaptability coefficient is compared with the adaptability coefficient threshold to evaluate the device size accuracy after process migration. The process is as follows:

[0099] when , then the size change of the device after migration exceeds the allowable range, and the process migration accuracy does not meet the requirements;

[0100] when , the size change of the device after migration is within the allowable range, and the process migration accuracy meets the requirements.

[0101] in, It is a preset adaptability coefficient threshold used to evaluate the accuracy of device dimensions after process migration.

[0102] In the formula , , , , and The specific value of is generally determined by those skilled in the art according to actual conditions. The essence of this formula is a comprehensive analysis by weighted summation. The technicians in this field collect multiple groups of sample data, set corresponding coefficients or indexes for each group of sample data, substitute the set coefficients or indexes and the collected sample data into the formula, observe the accuracy of the model output and the rationality of the results through repeated experiments and parameter adjustments, gradually adjust these coefficients or indexes, and compare the performance and effect of the model under different parameter settings to find the optimal coefficient combination, screen the calculated factor coefficients and take the average, and obtain , , , , and The value of .

[0103] In addition, the size of the coefficient or exponent is a specific numerical value obtained by quantifying each parameter. In order to facilitate subsequent comparison, the size of the coefficient depends on the amount of sample data and the technical personnel in this field preliminarily set the corresponding coefficient or exponent for each set of sample data. It is not unique as long as it does not affect the proportional relationship between the parameter and the quantized value.

[0104] The above formulas are all dimensionless and numerical calculations. The formula is a formula for the most recent real situation obtained by collecting a large amount of data and performing software simulation. The preset parameters in the formula are set by technicians in this field according to actual conditions.

[0105] The above embodiments may be implemented in whole or in part by software, hardware, firmware or any other combination thereof. When implemented by software, the above embodiments may be implemented in whole or in part in the form of a computer program product. Those skilled in the art may appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein may be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed by hardware or software methods depends on the specific application and design constraints of the technical solution.

[0106] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, and may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0107] The above description is only a specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application.

Claims

1. A method for checking the size of a design process migration device, characterized in that: The specific steps include: S1. Collecting geometric parameters, alignment accuracy parameters and temperature parameters of the device size after migration, wherein the geometric parameters include the width of the metal line, the distance between adjacent lines and the diameter of the through hole, the alignment accuracy parameters include the ratio of the overlapping area of ​​the metal layer and the through hole to the total area of ​​the through hole, and the alignment accuracy between different layers, and the temperature parameters include the thermal expansion coefficient and the temperature variation range; S2. Process the collected data of the width of the metal lines, the distance between adjacent lines, and the diameter of the through-hole, and perform correlation analysis to generate a size coefficient for characterizing the device after migration; process the data of the ratio of the overlapping area of ​​the metal layer and the through-hole to the total area of ​​the through-hole, and the alignment between different layers, and perform correlation analysis to generate a precision coefficient for characterizing the device after migration; process the data of the thermal expansion coefficient and the temperature variation range, and perform correlation analysis to generate a temperature influence coefficient; S3. Process the generated size coefficient, precision coefficient and temperature influence coefficient, perform correlation analysis, generate a process migration adaptability coefficient, and compare the process migration adaptability coefficient with the adaptability coefficient threshold; S4. Based on the comparison results, evaluate the device dimensional accuracy after process migration.

2. The method for checking the size of a design process migration device according to claim 1, characterized in that: The collected metal line width, the distance between adjacent lines, and the diameter of the through hole are processed and correlated to generate a size factor for characterizing the device after migration. The formula is as follows: ； in, is the size factor of the device after migration, is the width of the metal line, is the maximum value of the width of the metal line, is the minimum width of the metal line, is the distance between adjacent lines, is the maximum distance between adjacent lines, is the minimum distance between adjacent lines, is the diameter of the through hole, is the maximum value of the through hole diameter, is the minimum diameter of the through hole, is the proportional coefficient of the width of the metal line, is the proportional coefficient of the distance between adjacent lines, is the proportionality factor of the through hole diameter, ,and .

3. The method for checking the size of a design process migration device according to claim 1, characterized in that: The alignment accuracy between different layers is obtained according to the following formula: ， ； The position of the reference layer is and , the position of the layer to be aligned is and , the formula is as follows: ； The maximum allowed offset is and , is the alignment accuracy between different layers, Between 0 and 1, where 0 means completely misaligned and 1 means completely aligned.

4. The method for checking the size of a design process migration device according to claim 3, characterized in that: Get the total area of ​​the through hole according to the following formula: ； in, is the total area of ​​the through hole, is the diameter of the through hole; The ratio of the overlapping area of ​​the metal layer and the through hole is as follows: ； in, is the overlapping area between the metal layer and the through hole, is the center distance between the metal layer and the through hole, is the radius of the metal layer, , is the diameter of the metal layer, is the radius of the through hole, ; Get the ratio of the overlap area between the metal layer and the through hole to the total through hole area, based on the following formula: ； in, It is the ratio of the overlapping area of ​​the metal layer and the through hole to the total area of ​​the through hole.

5. The method for checking the size of a design process migration device according to claim 4, characterized in that: The ratio of the overlap area between the metal layer and the through hole to the total area of ​​the through hole and the alignment between different layers are processed and correlated to generate the accuracy coefficient used to characterize the device after migration. The formula is as follows: ； in, is the accuracy coefficient after device migration, is the proportionality factor of the alignment accuracy between different layers, is the ratio coefficient of the overlapping area between the metal layer and the through hole.

6. The method for checking the size of a design process migration device according to claim 1, characterized in that: Get the thermal expansion for each temperature range according to the following formula: ； in, is the thermal expansion within the temperature range, is the coefficient of thermal expansion, is the corresponding temperature variation range; The temperature influence coefficient is determined by regression analysis, using a linear regression model with the following formula: ； in, is the temperature influence coefficient, is the error term.

7. The method for checking the size of a design process migration device according to claim 1, characterized in that: The generated size coefficient, precision coefficient and temperature influence coefficient are processed and correlated to generate the process migration adaptability coefficient based on the following formula: ； in, is the process migration adaptability coefficient, is the proportionality coefficient of the temperature influence coefficient, is the proportionality coefficient of the size factor after device migration, is the proportionality factor of the alignment accuracy between different layers.

8. The method for checking the size of a design process migration device according to claim 1, characterized in that: Compare the process migration adaptability coefficient with the adaptability coefficient threshold to evaluate the device dimensional accuracy after process migration. The process is as follows: when , then the size change of the device after migration exceeds the allowable range, and the process migration accuracy does not meet the requirements; when , then the size change of the device after migration is within the allowable range, and the process migration accuracy meets the requirements; in, It is a preset adaptability coefficient threshold used to evaluate the accuracy of device dimensions after process migration.

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