A bidirectional amplifier based on artificial transmission lines

Abstract

The application discloses a bidirectional amplifier based on an artificial transmission line, comprising a first circuit, a second circuit and a third circuit connected with the first circuit; the first circuit comprises a first amplifier AMP1 and a second amplifier AMP2, which are used as an amplification circuit unit in the bidirectional amplifier; the second circuit and the third circuit have the same structure and each comprises two artificial transmission lines and two switches; and RF1 and RF2 are used as radio frequency input / output ports of the whole bidirectional amplifier. The second circuit and the third circuit have the same structure, and the artificial transmission lines are applied in the second circuit and the third circuit, so that the on-chip integration of the up-conversion system and the phased array chip and the sharing of the radio frequency link become possible, and the complexity of the system and the area of the radio frequency circuit of the chip are greatly reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of radio frequency amplification, and in particular to a bidirectional amplifier based on artificial transmission lines. BACKGROUND

[0002] With the miniaturization and integration of electronic devices, the integration of frequency conversion chips and phased array chips is becoming higher and higher. In traditional frequency conversion systems and phased array systems, the up-conversion system and the down-conversion system exist independently, and the transmission link and the reception link of the phased array system also exist independently. External transceiver switching switches are needed between the up-conversion and down-conversion channels and between the transmission and reception links of the phased array system, which increases the complexity of the ports and the size of the device. On-chip high-integration bidirectional amplifiers have become the focus of attention for those skilled in the art. SUMMARY

[0003] Technical purpose: In view of the defects in the prior art, the present application discloses a bidirectional amplifier based on artificial transmission lines. By constructing second and third part circuits with the same structure, and applying artificial transmission lines in the second and third part circuits, it is possible to integrate the up-conversion and down-conversion systems and the phased array chip on-chip shared radio frequency link, and greatly reduce the complexity of the system and the area of the chip radio frequency circuit.

[0004] Technical scheme: In order to achieve the above technical purpose, the present application adopts the following technical scheme.

[0005] A bidirectional amplifier based on artificial transmission lines, comprising a first part circuit and a second part circuit and a third part circuit connected with the first part circuit;

[0006] The first part circuit comprises a first amplifier AMP1 and a second amplifier AMP2 as an amplification circuit unit in the bidirectional amplifier; the second part circuit and the third part circuit are the same structure, and are transceiver port units of the bidirectional amplifier;

[0007] The second part circuit comprises two artificial transmission lines and two switches, S1 switch is connected to RF1 port through artificial transmission line TL1, S3 switch is connected to RF1 port through artificial transmission line TL3, and RF1 port is a radio frequency input / output port of the second part circuit and also a radio frequency input / output port of the entire bidirectional amplifier;

[0008] The third part circuit comprises two artificial transmission lines and two switches, S2 switch is connected to RF2 port through artificial transmission line TL2, S4 switch is connected to RF2 port through artificial transmission line TL4, and RF2 port is a radio frequency input / output port of the second part circuit and also a radio frequency input / output port of the entire bidirectional amplifier.

[0009] Preferably, the first part circuit comprises a first amplifier AMP1 and a second amplifier AMP2 which are structurally identical, the first amplifier AMP1 comprises a first transistor and a second transistor, in the first amplifier AMP1, the first transistor and the second transistor constitute a common-source common-gate amplifier structure; the second amplifier AMP2 comprises a third transistor and a fourth transistor; in the second amplifier AMP2, the third transistor and the fourth transistor constitute a common-source common-gate amplifier structure.

[0010] Preferably, the drain of the first transistor is connected to the source of the second transistor, the source of the first transistor is grounded, the gate of the first transistor is connected to one end of a first inductor, the other end of the first inductor is connected to a bias voltage Vb1; the gate of the first transistor is connected to one end of a third capacitor, the other end of the third capacitor serves as an input terminal of the first amplifier AMP1; the gate of the second transistor is connected to a bias voltage Vb2; the drain of the second transistor is connected to the gate of the first transistor through a first resistor and a first capacitor; the drain of the second transistor is connected to a VDD voltage signal through a third inductor; the drain of the second transistor is connected to one end of a fifth capacitor, the other end of the fifth capacitor serves as an output terminal of the first amplifier AMP1;

[0011] The first resistor and the first capacitor constitute a feedback circuit of the common-source common-gate amplifier, and together with the common-source common-gate amplifier structure composed of the first transistor and the second transistor, form a complete amplifier core circuit.

[0012] Preferably, the drain of the fourth transistor is connected to the source of the third transistor, the source of the fourth transistor is grounded, the gate of the fourth transistor is connected to one end of a second inductor, the other end of the second inductor is connected to a bias voltage Vb1; the gate of the fourth transistor is connected to one end of a fourth capacitor, the other end of the fourth capacitor serves as an input terminal of the second amplifier AMP2; the gate of the third transistor is connected to a bias voltage Vb2; the drain of the third transistor is connected to the gate of the fourth transistor through a second resistor and a second capacitor, the drain of the third transistor is connected to a VDD voltage signal through a fourth inductor; the drain of the third transistor is connected to one end of a sixth capacitor, the other end of the sixth capacitor serves as an output terminal of the second amplifier AMP2;

[0013] The second resistor and the second capacitor constitute a feedback circuit of the common-source common-gate amplifier, and together with the common-source common-gate amplifier structure composed of the third transistor and the fourth transistor, form a complete amplifier core circuit.

[0014] Preferably, the first transistor, the second transistor, the third transistor and the fourth transistor are of the same size.

[0015] Preferably, the second partial circuit comprises a fifth transistor, a sixth transistor, a seventh capacitor, a fifth inductor, a sixth inductor; wherein the fifth transistor is as a S1 switch, and the sixth transistor is as a S3 switch; the fifth inductor, half of the seventh capacitor, and the parasitic capacitor of the fifth transistor form an artificial transmission transmission line TL1; the sixth inductor, the other half of the seventh capacitor, and the parasitic capacitor of the sixth transistor form an artificial transmission transmission line TL3.

[0016] The source of the fifth transistor is grounded, the drain of the fifth transistor is as a first connection end of the second partial circuit, and is connected with the input end of the first amplifier AMP1 in the first partial circuit; the source of the sixth transistor is grounded, the drain of the sixth transistor is as a second connection end of the second partial circuit, and is connected with the output end of the second amplifier AMP2 in the first partial circuit; the gate of the fifth transistor and the gate of the sixth transistor are respectively connected; the drain of the fifth transistor is connected with one end of the fifth inductor, the drain of the sixth transistor is connected with one end of the sixth inductor, one end of the seventh capacitor is grounded, and the other end of the seventh capacitor, the other end of the fifth inductor, and the other end of the sixth inductor are commonly connected to the RF1 port.

[0017] Preferably, the fifth transistor and the sixth transistor are of the same size.

[0018] Preferably, the third partial circuit comprises a seventh transistor, an eighth transistor, an eighth capacitor, a seventh inductor, an eighth inductor; wherein the seventh transistor is as a S2 switch, and the eighth transistor is as a S4 switch; the seventh inductor, the other half of the eighth capacitor, and the parasitic capacitor of the seventh transistor form an artificial transmission transmission line TL2; the eighth inductor, the other half of the eighth capacitor, and the parasitic capacitor of the eighth transistor form an artificial transmission transmission line TL4.

[0019] The source of the seventh transistor is grounded, the drain of the seventh transistor is as a first connection end of the third partial circuit, and is connected with the output end of the first amplifier AMP1 in the first partial circuit; the source of the eighth transistor is grounded, the drain of the eighth transistor is as a second connection end of the third partial circuit, and is connected with the input end of the second amplifier AMP2 in the first partial circuit; the gate of the seventh transistor and the gate of the eighth transistor are respectively connected with switch control voltages Vcon1 and Vcon2; the drain of the seventh transistor is connected with one end of the seventh inductor, the drain of the eighth transistor is connected with one end of the eighth inductor, one end of the eighth capacitor is grounded, and the other end of the eighth capacitor, the other end of the seventh inductor, and the other end of the eighth inductor are commonly connected to the RF2 port.

[0020] Preferably, the seventh transistor and the eighth transistor are of the same size.

[0021] Preferably, the input from the RF1 port and the output from the RF2 port are forward amplification, the input from the RF2 port and the output from the RF1 port are reverse amplification, the S1 switch and the S2 switch are turned off during forward amplification, the S3 switch and the S4 switch are turned on during forward amplification, the S1 switch and the S2 switch are turned on during reverse amplification, the S3 switch and the S4 switch are turned off during reverse amplification, and the S1 switch, the S2 switch, the S3 switch and the S4 switch all work in a linear region.

[0022] Beneficial effects: the application makes the on-chip integration of the upper and lower frequency conversion system and the phased array chip possible by constructing the second part circuit and the third part circuit with the same structure and applying the artificial transmission line in the second part circuit and the third part circuit, and greatly reduces the complexity of the system and the area of the chip radio frequency circuit. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 An equivalent structure schematic diagram of the bidirectional amplifier based on the artificial transmission line is provided for the embodiment of the application;

[0024] Figure 2 An artificial transmission line and an equivalent circuit structure schematic diagram thereof are provided for the embodiment of the application;

[0025] Figure 3 A structure schematic diagram of the bidirectional amplifier based on the artificial transmission line is provided for the embodiment of the application;

[0026] Figure 4 A transistor equivalent circuit schematic diagram of the bidirectional amplifier based on the artificial transmission line is provided for the embodiment of the application;

[0027] Figure 5 A forward amplification function schematic diagram of the bidirectional amplifier is provided for the embodiment of the application;

[0028] Figure 6 A reverse amplification function schematic diagram of the bidirectional amplifier is provided for the embodiment of the application;

[0029] Figure 7 An example simulation result of the bidirectional amplifier based on the artificial transmission line is provided for the embodiment of the application Figure 1 ;

[0030] Figure 8 An example simulation result of the bidirectional amplifier based on the artificial transmission line is provided for the embodiment of the application Figure 2 ;

[0031] In the figure: 100 - first part of circuit; 200 - second part of circuit; 300 - third part of circuit; 101 - first transistor, 102 - second transistor, 103 - third transistor, 104 - fourth transistor, 105 - first resistor, 106 - second resistor, 107 - first capacitor, 108 - second capacitor, 109 - third capacitor, 110 - fourth capacitor, 111 - fifth capacitor, 112 - sixth capacitor, 113 - first inductor, 114 - second inductor, 115 - third inductor, 116 - fourth inductor, 201 - fifth transistor, 202 - sixth transistor, 203 - seventh capacitor, 204 - fifth inductor, 205 - sixth inductor, 301 - seventh transistor, 302 - eighth transistor, 303 - eighth capacitor, 304 - seventh inductor, 305 - eighth inductor. DETAILED DESCRIPTION

[0032] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.

[0033] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work under the premise that the scope of protection of the present application.

[0034] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. Meanwhile, in the description of the present application, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0035] It should be noted that, in this article, the relationship terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or equipment. Without more limitation, the element defined by the statement "including a" does not exclude the presence of other identical elements in the process, method, article or equipment including the element.

[0036] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "set", "connected" should be understood broadly, for example, it can be fixedly connected, or detachably connected, or integrally connected; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium, or the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0037] Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The following examples and features in the examples can be combined with each other without conflict.

[0038] Through a lot of practice and experience summary, it is found that the traditional bidirectional switching circuit structure is complex, occupies large area, and is extremely inconvenient to use and debug, and it is difficult to integrate the transceiver unit into a single chip. The present application proposes a bidirectional amplifier based on artificial transmission line, which has small chip area, can integrate the switching ports of the up-down converter and the phased array transceiver switching ports into the same chip, and can be used in various circuit schemes.

[0039] Please refer to Figure 1 , Figure 1 The structure schematic diagram of the bidirectional amplifier based on artificial transmission line provided by the embodiment of the present application. The bidirectional amplifier structure proposed by the present application includes a first part circuit 100 and a second part circuit 200 and a third part circuit 300 connected with the first part circuit 100.

[0040] The first part circuit 100 includes a first amplifier AMP1 and a second amplifier AMP2 as an amplification circuit unit in the bidirectional amplifier;

[0041] The second part circuit 200 and the third part circuit 300 have the same structure, which are transceiver port units of the bidirectional amplifier;

[0042] The second part circuit 200 includes two artificial transmission lines and two switches, and a radio frequency input / output port RF1 of the second part circuit serves as a radio frequency input / output port of the entire bidirectional amplifier.

[0043] The third part circuit 300 includes two artificial transmission lines and two switches, and a radio frequency output / input port RF2 of the third part circuit serves as a radio frequency output / input port of the entire bidirectional amplifier.

[0044] Please refer to Figure 2 , Figure 2 The artificial transmission line structure schematic diagram provided for the embodiment of the present application, Figure 2 The equivalent artificial transmission line structure is a π-type network, which has the advantages of small area and low loss compared with a traditional transmission line, and is often applied in a chip with high requirements for area size. The equivalent artificial transmission line is applied in the bidirectional amplifier, so that a bidirectional amplifier based on an artificial transmission line as shown in Figure 3 is obtained. In the present application, the chip area occupied by the artificial transmission line is small, and the artificial transmission line is more easily integrated in an up-conversion and down-conversion system and a phased array transceiver system. The input and output passive networks are both transmission line structures, which are more conducive to reducing the return loss of the port. Thanks to good input and output network matching, the bidirectional amplifier can realize wideband optional bidirectional amplification.

[0045] The first part circuit 100 includes a first amplifier AMP1 and a second amplifier AMP2 which have the same structure, the first amplifier AMP1 includes a first transistor 101 and a second transistor 102, and the second amplifier AMP2 includes a third transistor 103 and a fourth transistor 104;

[0046] The drain of the first transistor 101 is connected with the source of the second transistor 102, the source of the first transistor 101 is grounded, the gate of the first transistor 101 is connected with one end of a first inductor 113, and the other end of the first inductor 113 is connected with a bias voltage Vb1; the gate of the first transistor 101 is connected with one end of a third capacitor 109, and the other end of the third capacitor 109 serves as an input end of the first amplifier AMP1; the gate of the second transistor 102 is connected with a bias voltage Vb2; the drain of the second transistor 102 is connected with the gate of the first transistor 101 through a first resistor 105 and a first capacitor 107; the drain of the second transistor 102 is connected with a VDD voltage signal through a third inductor 115; the drain of the second transistor 102 is connected with one end of a fifth capacitor 111, and the other end of the fifth capacitor 111 serves as an output end of the first amplifier AMP1;

[0047] In the first amplifier AMP1, the first transistor 101 and the second transistor 102 form a common-source common-gate amplifier structure, the first resistor 105 and the first capacitor 107 form a feedback circuit of the common-source common-gate amplifier, and the common-source common-gate amplifier structure and the feedback circuit together form a complete amplifier core circuit; the amplifier core circuit applied to the present application is not limited to the common-source common-gate amplifier feedback structure described herein.

[0048] The drain of the fourth transistor 104 is connected to the source of the third transistor 103, the source of the fourth transistor 104 is grounded, the gate of the fourth transistor 104 is connected to one end of the second inductor 114, and the other end of the second inductor 114 is connected to a bias voltage Vb1; the gate of the fourth transistor 104 is connected to one end of the fourth capacitor 110, and the other end of the fourth capacitor 110 serves as an input terminal of the second amplifier AMP2; the gate of the third transistor 103 is connected to a bias voltage Vb2; the drain of the third transistor 103 is connected to the gate of the fourth transistor 104 through the second resistor 106 and the second capacitor 108, and the drain of the third transistor 103 is connected to a VDD voltage signal through the fourth inductor 116; the drain of the third transistor 103 is connected to one end of the sixth capacitor 112, and the other end of the sixth capacitor 112 serves as an output terminal of the second amplifier AMP2;

[0049] In the second amplifier AMP2, the third transistor 103 and the fourth transistor 104 form a common-source common-gate amplifier structure, the second resistor 106 and the second capacitor 108 form a feedback circuit of the common-source common-gate amplifier, and the common-source common-gate amplifier structure and the feedback circuit together form a complete amplifier core circuit; the amplifier core circuit applied to the present application is not limited to the common-source common-gate amplifier feedback structure described herein.

[0050] In the first part of the circuit 100, the gate of the second transistor 102 and the gate of the third transistor 103 are connected to a bias voltage Vb2, and the bias voltage Vb2 is a bias voltage of the common-gate stage amplifier; the first inductor 113 and the second inductor 114 provide a bias voltage Vb1 for the common-source stages of the two amplifiers, and the bias voltage Vb1 is a bias voltage of the common-source stage amplifier; meanwhile, the first inductor 113 and the second inductor 114 are respectively part of the matching network of the two amplifiers; the amplifier matching network applied to the present application is not limited to the inductor parallel capacitor series structure described herein.

[0051] The third inductor 115 and the fourth inductor 116 respectively provide a power supply voltage VDD for the two amplifiers, and meanwhile, the third inductor 115 and the fourth inductor 116 are respectively part of the matching network of the two amplifiers; the amplifier matching network applied to the present application is not limited to the inductor parallel capacitor series structure described herein.

[0052] The third capacitor 109, the fourth capacitor 110, the fifth capacitor 111, and the sixth capacitor 112 are the input and output capacitors of the two amplifiers. Their function is to block DC and prevent the input and output levels from affecting the amplifier bias.

[0053] The first transistor 101, the second transistor 102, the third transistor 103, and the fourth transistor 104 are all the same size.

[0054] like Figure 3 As shown, in the second part of the circuit 200, switch S1 is connected to port RF1 via artificial transmission line TL1, and switch S3 is connected to port RF1 via artificial transmission line TL3. Port RF1 serves as the RF input / output port of the second part of the circuit, and also as the RF input / output port of the entire bidirectional amplifier.

[0055] Specifically, the second part of the circuit 200 includes a fifth transistor 201, a sixth transistor 202, a seventh capacitor 203, a fifth inductor 204, and a sixth inductor 205; wherein, the fifth transistor 201 serves as an S1 switch, and the sixth transistor 202 serves as an S3 switch; the fifth inductor 204, half of the seventh capacitor 203, and the parasitic capacitance of the fifth transistor 201 form an artificial transmission line TL1; the sixth inductor 205, the other half of the seventh capacitor 203, and the parasitic capacitance of the sixth transistor 202 form an artificial transmission line TL3;

[0056] The source of the fifth transistor 201 is grounded, and its drain serves as the first connection terminal of the second circuit 200, connected to the input terminal of the first amplifier AMP1 in the first circuit 100, i.e., connected to the third capacitor 109. The source of the sixth transistor 202 is grounded, and its drain serves as the second connection terminal of the second circuit 200, connected to the output terminal of the second amplifier AMP2 in the first circuit 100, i.e., connected to the sixth capacitor 112. The gates of the fifth transistor 201 and the sixth transistor 202 are respectively connected to the switching control voltage Vcon1. With Vcon2, the transistor is in the on state when the control voltage is high and in the off state when the control voltage is low; the drain of the fifth transistor 201 is connected to one end of the fifth inductor 204, the drain of the sixth transistor 202 is connected to one end of the sixth inductor 205, one end of the seventh capacitor 203 is grounded, and the other ends of the seventh capacitor 203, the other ends of the fifth inductor 204, and the other ends of the sixth inductor 205 are all connected to the RF1 port. The RF1 port serves as the RF input / output port of the second part of the circuit and is also the RF input / output port of the entire bidirectional amplifier.

[0057] In this embodiment, the fifth transistor 201 and the sixth transistor 202 are the same size.

[0058] In the third partial circuit 300, the S2 switch is connected to the RF2 port through the artificial transmission transmission line TL2, and the S4 switch is connected to the RF2 port through the artificial transmission transmission line TL4, and the RF2 port is used as the radio frequency input / output port of the second partial circuit and is also used as the radio frequency input / output port of the entire bidirectional amplifier.

[0059] Specifically, the third partial circuit 300 includes a seventh transistor 301, an eighth transistor 302, an eighth capacitor 303, a seventh inductor 304, and an eighth inductor 305; wherein the seventh transistor 301 is used as the S2 switch, and the eighth transistor 302 is used as the S4 switch; the seventh inductor 304, the other half of the eighth capacitor 303, and the parasitic capacitor of the seventh transistor 301 form the artificial transmission transmission line TL2; the eighth inductor 305, the other half of the eighth capacitor 303, and the parasitic capacitor of the eighth transistor 302 form the artificial transmission transmission line TL4.

[0060] The source of the seventh transistor 301 is grounded, the drain of the seventh transistor 301 is used as the first connection end of the third partial circuit 300, and is connected to the output end of the first amplifier AMP1 in the first partial circuit 100, i.e., connected to the fifth capacitor 111; the source of the eighth transistor 302 is grounded, the drain of the eighth transistor 302 is used as the second connection end of the third partial circuit 300, and is connected to the input end of the second amplifier AMP2 in the first partial circuit 100, i.e., connected to the fourth capacitor 110; the gate of the seventh transistor 301 and the gate of the eighth transistor 302 are respectively connected to the switch control voltages Vcon1 and Vcon2, when the control voltage is 1V, i.e., high level, the transistor is in an open state, and when the control voltage is 0V, i.e., low level, the transistor is in a closed state; the drain of the seventh transistor 301 is connected to one end of the seventh inductor 304, the drain of the eighth transistor 302 is connected to one end of the eighth inductor 305, one end of the eighth capacitor 303 is grounded, the other end of the eighth capacitor 303, the other end of the seventh inductor 304, and the other end of the eighth inductor 305 are commonly connected to the RF2 port, and the RF2 port is used as the radio frequency input / output port of the second partial circuit and is also used as the radio frequency input / output port of the entire bidirectional amplifier.

[0061] In this embodiment, the seventh transistor 301 and the eighth transistor 302 have the same size.

[0062] In the present application, the artificial transmission lines TL1, TL2, TL3, and TL4 and the switches S1, S2, S3, and S4 are used as the bidirectional switch controller of the amplifier and the input / output matching network of the first amplifier AMP1 and the second amplifier AMP2, which realizes good matching while realizing the function of bidirectional switching, and greatly saves the chip area.

[0063] ReferenceFigure 5 、 6 , Figure 5 is a schematic diagram of forward amplification function of the bidirectional amplifier, Figure 6 is a schematic diagram of reverse amplification function of the bidirectional amplifier. When input from the radio frequency port RF1 and output from the radio frequency port RF2, it is forward amplification; when input from the radio frequency port RF2 and output from the radio frequency port RF1, it is reverse amplification. The S1 switch, i.e. the fifth transistor 201, and the S2 switch, i.e. the seventh transistor 301, are turned off in forward amplification, the S3 switch, i.e. the sixth transistor 202, and the S4 switch, i.e. the eighth transistor 302, are turned on in forward amplification, the S1 switch and the S2 switch are turned on in reverse amplification, and the S3 switch and the S4 switch are turned off in reverse amplification; the fifth transistor 201, the seventh transistor 301, the sixth transistor 202 and the eighth transistor 302 all work in the linear region, as shown in FIG. 4, when the transistor switch control voltage is high, the transistor is turned on, at this time, the switch transistor is equivalent to a parallel model of a resistance Ron and a capacitance Con, wherein Ron is a small resistance, and the radio frequency band can shield Con, so that the switch is equivalent to a low resistance model when turned on, when the transistor switch control voltage is low, the transistor is turned off, at this time, the switch transistor is equivalent to a series model of a resistance Roff and a capacitance Coff, wherein Roff is a large resistance, so that the switch can be equivalent to a high resistance model when turned off. As shown in FIG. 5, when the switches S3 and S4 are turned on, TL3 is high resistance from RF1, and TL4 is also high resistance from RF2, at this time, the second amplifier AMP2 is shielded, and the first amplifier AMP1 works normally, input from the radio frequency port RF1 and output from the radio frequency port RF2, to realize forward amplification. As shown in FIG. 6, when the switches S1 and S2 are turned on, TL1 is high resistance from RF1, and TL2 is also high resistance from RF2, at this time, the first amplifier AMP1 is shielded, and the second amplifier AMP2 works normally, input from the radio frequency port RF2 and output from the radio frequency port RF1, to realize reverse amplification. In this way, the switching of the two completes the function of the bidirectional amplifier. Figure 4 Figure 5 Figure 6

[0064] Please refer to Figure 7 、 Figure 8 , Figure 7 , Figure 8 is a simulation result diagram of an example of the bidirectional amplifier based on the artificial transmission line. Figure 7 and Figure 8 , the solid line S21 represents the gain, the short dashed line S22 represents the reflection coefficient of the radio frequency RF1 port, and the long dashed line S11 represents the reflection coefficient of the radio frequency RF2 port. It can be seen that the bidirectional amplifier based on the artificial transmission line of the present application can realize bidirectional wideband amplification, the 1dB bandwidth is 22GHz to 30GHz, and the reflection coefficients of the input and output matching networks in the range of 8GHz are all below -15dB.​​​

[0065] The above description is only preferred embodiments of the present application and is not used to limit the present application. The present application can have various modifications and changes for those skilled in the art. Any modification, equivalent replacement, improvement, etc. within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0066] It is obvious for those skilled in the art that the present application is not limited to the details of the above exemplary embodiments, but can be implemented in other specific forms without departing from the spirit or essential characteristics of the present application. Therefore, the embodiments should be regarded as exemplary and non-limiting, the scope of the present application is defined by the appended claims rather than the above description, and all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present application. Any reference signs in the claims should not be regarded as limiting the involved claims.

Claims

1. A bidirectional amplifier based on artificial transmission lines, characterized by, The first part circuit (100) and the second part circuit (200) and the third part circuit (300) connected with the first part circuit (100) are included; The first part circuit (100) includes a first amplifier AMP1 and a second amplifier AMP2 as a bidirectional amplifier middle amplification circuit unit; the second part circuit (200) and the third part circuit (300) are the same structure as a bidirectional amplifier transceiver port unit; The second part circuit (200) includes two artificial transmission lines and two switches, S1 switch is connected to RF1 port through artificial transmission line TL1, S3 switch is connected to RF1 port through artificial transmission line TL3, RF1 port is the radio frequency input / output port of the second part circuit, and is also the radio frequency input / output port of the whole bidirectional amplifier; The third part circuit (300) includes two artificial transmission lines and two switches, S2 switch is connected to RF2 port through artificial transmission line TL2, S4 switch is connected to RF2 port through artificial transmission line TL4, RF2 port is the radio frequency input / output port of the second part circuit, and is also the radio frequency input / output port of the whole bidirectional amplifier; In the second part circuit (200) and the third part circuit (300), each artificial transmission line includes an inductance, a half capacitance and a parasitic capacitance of a transistor which constitute a π-type network, wherein the four transistors are four switches S1-S4, the parasitic capacitances of the four transistors are part of the artificial transmission lines, and the drain of each transistor is one end of the switch, the source is the other end of the switch, and is grounded; and the two artificial transmission lines in the second part circuit (200) share one capacitance, and the two artificial transmission lines in the third part circuit (300) share one capacitance; The input end of the first amplifier AMP1 is connected with the artificial transmission line TL1 and one end of S1 switch; the output end of the first amplifier AMP1 is connected with the artificial transmission line TL2 and one end of S2 switch; the input end of the second amplifier AMP2 is connected with the artificial transmission line TL4 and one end of S4 switch; the output end of the second amplifier AMP2 is connected with the artificial transmission line TL3 and one end of S3 switch; The input from RF1 port and the output from RF2 port are forward amplification; the input from RF2 port and the output from RF1 port are reverse amplification; S1 switch and S2 switch are turned off in forward amplification, S3 switch and S4 switch are turned on in forward amplification; S1 switch and S2 switch are turned on in reverse amplification, S3 switch and S4 switch are turned off in reverse amplification; S1 switch, S2 switch, S3 switch and S4 switch all work in linear region.

2. The artificial transmission line based bidirectional amplifier of claim 1, wherein: The first part circuit (100) comprises first and second amplifiers AMP1 and AMP2 which are structurally identical, the first amplifier AMP1 comprising first and second transistors (101) and (102), in the first amplifier AMP1, the first and second transistors (101) and (102) forming a common-source common-gate amplifier structure; the second amplifier AMP2 comprising third and fourth transistors (103) and (104), in the second amplifier AMP2, the third and fourth transistors (103) and (104) forming a common-source common-gate amplifier structure.

3. The artificial transmission line based bidirectional amplifier of claim 2, wherein: The drain of the first transistor (101) is connected to the source of the second transistor (102), the source of the first transistor (101) is grounded, the gate of the first transistor (101) is connected to one end of a first inductor (113), the other end of the first inductor (113) is connected to a bias voltage Vb1; the gate of the first transistor (101) is connected to one end of a third capacitor (109), the other end of the third capacitor (109) serving as an input terminal of the first amplifier AMP1; the gate of the second transistor (102) is connected to a bias voltage Vb2; the drain of the second transistor (102) is connected to the gate of the first transistor (101) through a first resistor (105) and a first capacitor (107); the drain of the second transistor (102) is connected to a VDD voltage signal through a third inductor (115); the drain of the second transistor (102) is connected to one end of a fifth capacitor (111), the other end of the fifth capacitor (111) serving as an output terminal of the first amplifier AMP1; The first resistor (105) and the first capacitor (107) form a feedback circuit of the common-source common-gate amplifier, and together with the common-source common-gate amplifier structure formed by the first and second transistors (101) and (102) form a complete amplifier core circuit.

4. The artificial transmission line based bidirectional amplifier of claim 2, wherein: The drain of the fourth transistor (104) is connected to the source of the third transistor (103), the source of the fourth transistor (104) is grounded, the gate of the fourth transistor (104) is connected to one end of a second inductor (114), the other end of the second inductor (114) is connected to a bias voltage Vb1; the gate of the fourth transistor (104) is connected to one end of a fourth capacitor (110), the other end of the fourth capacitor (110) serving as an input terminal of the second amplifier AMP2; the gate of the third transistor (103) is connected to a bias voltage Vb2; the drain of the third transistor (103) is connected to the gate of the fourth transistor (104) through a second resistor (106) and a second capacitor (108), the drain of the third transistor (103) is connected to a VDD voltage signal through a fourth inductor (116); the drain of the third transistor (103) is connected to one end of a sixth capacitor (112), the other end of the sixth capacitor (112) serving as an output terminal of the second amplifier AMP2; The second resistor (106) and the second capacitor (108) constitute a feedback circuit of a common-source common-gate amplifier, and the common-source common-gate amplifier structure composed of the third transistor (103) and the fourth transistor (104) together constitute a complete amplifier core circuit.

5. The artificial transmission line based bidirectional amplifier of claim 2, wherein: The first transistor (101), the second transistor (102), the third transistor (103) and the fourth transistor (104) have the same size.

6. The artificial transmission line based bidirectional amplifier of claim 1, wherein: The second partial circuit (200) comprises a fifth transistor (201), a sixth transistor (202), a seventh capacitor (203), a fifth inductor (204) and a sixth inductor (205); the fifth transistor (201) is used as an S1 switch, and the sixth transistor (202) is used as an S3 switch; the fifth inductor (204), half of the seventh capacitor (203) and a parasitic capacitor of the fifth transistor (201) constitute an artificial transmission line TL1; the sixth inductor (205), the other half of the seventh capacitor (203) and a parasitic capacitor of the sixth transistor (202) constitute an artificial transmission line TL3; The source of the fifth transistor (201) is grounded, the drain of the fifth transistor (201) is used as a first connection end of the second partial circuit (200) and is connected to an input end of the first amplifier AMP1 in the first partial circuit (100); the source of the sixth transistor (202) is grounded, the drain of the sixth transistor (202) is used as a second connection end of the second partial circuit (200) and is connected to an output end of the second amplifier AMP2 in the first partial circuit (100); the gate of the fifth transistor (201) is connected to the gate of the sixth transistor (202); the drain of the fifth transistor (201) is connected to one end of the fifth inductor (204), the drain of the sixth transistor (202) is connected to one end of the sixth inductor (205), one end of the seventh capacitor (203) is grounded, and the other end of the seventh capacitor (203), the other end of the fifth inductor (204) and the other end of the sixth inductor (205) are commonly connected to an RF1 port.

7. The artificial transmission line based bidirectional amplifier of claim 6, wherein: The fifth transistor (201) and the sixth transistor (202) have the same size.

8. The artificial transmission line based bidirectional amplifier of claim 1, wherein: The third partial circuit (300) comprises a seventh transistor (301), an eighth transistor (302), an eighth capacitor (303), a seventh inductor (304) and an eighth inductor (305); the seventh transistor (301) is used as an S2 switch, and the eighth transistor (302) is used as an S4 switch; the seventh inductor (304), the other half of the eighth capacitor (303) and a parasitic capacitor of the seventh transistor (301) constitute an artificial transmission line TL2; the eighth inductor (305), the other half of the eighth capacitor (303) and a parasitic capacitor of the eighth transistor (302) constitute an artificial transmission line TL4; The source of the seventh transistor (301) is grounded, the drain of the seventh transistor (301) is connected with the output of the first amplifier AMP1 in the first part circuit (100) as the first connection end of the third part circuit (300); the source of the eighth transistor (302) is grounded, the drain of the eighth transistor (302) is connected with the input of the second amplifier AMP2 in the first part circuit (100) as the second connection end of the third part circuit (300); the gate of the seventh transistor (301) and the gate of the eighth transistor (302) are respectively connected with the switch control voltage Vcon1 and Vcon2; the drain of the seventh transistor (301) is connected with one end of the seventh inductor (304), the drain of the eighth transistor (302) is connected with one end of the eighth inductor (305), one end of the eighth capacitor (303) is grounded, the other end of the eighth capacitor (303), the other end of the seventh inductor (304) and the other end of the eighth inductor (305) are commonly connected to the RF2 port.

9. The artificial transmission line based bidirectional amplifier of claim 8, wherein: The seventh transistor (301) and the eighth transistor (302) are of the same size.

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