Semiconductor structure measurement and analysis method and device, and readable storage medium

Abstract

A method and apparatus for measuring and analyzing a semiconductor structure, and a readable storage medium, the method comprising: providing a layer to be etched having a patterned photoresist layer; performing a first measurement on the patterned photoresist layer to obtain an outline of a pattern in the patterned photoresist layer; etching the layer to be etched to form an etched layer; performing a second measurement on the etched layer to obtain an outline of a pattern in the patterned etched layer; and performing measurement and analysis based on at least one of the outline of the pattern in the patterned photoresist layer and the outline of the pattern in the etched layer. In the technical solution of the present invention, measurement and analysis based on the outline of the pattern can effectively expand the scope of analysis data, improve the reliability of measurement data, enable global analysis of measurement data, and effectively improve the reliability and completeness of measurement and analysis.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to a semiconductor structure measurement and analysis method and device, and a readable storage medium. Background Art

[0002] The manufacturing process of semiconductor integrated circuits includes many different steps, including manufacturing and metrology. The purpose of metrology is to measure wafers in production and analyze the data to verify that they meet quality requirements and monitor the normal operation of the wafer production process. By employing reliable measurement and analysis methods in the metrology process, process deviations can be quickly detected, and process performance can be promptly understood, enabling the implementation of high-quality improvement and preventive measures.

[0003] Excellent measurement data analysis methods can effectively improve the manufacturing process's yield rate, reduce product scrap rates, and improve tool utilization. However, existing semiconductor structure measurement and analysis methods often suffer from problems such as a single data structure and low reliability of measurement results. Summary of the Invention

[0004] The problem solved by the present invention is how to expand measurement and analysis data and improve the reliability of measurement data.

[0005] To solve the above problems, the present invention provides a semiconductor structure measurement and analysis method, comprising:

[0006] A layer to be etched is provided, wherein the layer to be etched has a patterned photoresist layer thereon; a first measurement is performed on the patterned photoresist layer to obtain an outline of a pattern in the patterned photoresist layer; the layer to be etched is etched using the patterned photoresist layer as a mask to form a patterned etched layer; a second measurement is performed on the patterned etched layer to obtain an outline of a pattern in the patterned etched layer; and measurement and analysis are performed based on at least one of the outline of the pattern in the patterned photoresist layer and the outline of the pattern in the patterned etched layer.

[0007] Optionally, at least one of the step of performing a first measurement on the patterned photoresist layer and the step of performing a second measurement on the patterned etched layer is measured using a scanning electron microscope.

[0008] Optionally, in the step of measuring using a scanning electron microscope, measurement is performed using a feature size scanning electron microscope.

[0009] Optionally, the step of performing a first measurement on the patterned photoresist layer to obtain the outline of the pattern in the patterned photoresist layer includes: performing a first measurement on the patterned photoresist layer to obtain an image of the patterned photoresist layer; and extracting the outline of the pattern in the patterned photoresist layer based on the image of the patterned photoresist layer.

[0010] Optionally, the step of performing a first measurement on the patterned photoresist layer to obtain the contour of the pattern in the patterned photoresist layer further includes: after obtaining the image of the patterned photoresist layer and before extracting the contour of the pattern in the patterned photoresist layer, setting ADI contour parameters.

[0011] Optionally, in the step of performing a first measurement on the patterned photoresist layer, a microscope measurement value of a first area in the patterned photoresist layer is also obtained; the step of setting the ADI profile parameter includes: extracting the contour of the graphic of the first area in the image of the patterned photoresist layer; measuring the contour of the extracted graphic of the first area to obtain the contour measurement value of the first area; comparing the relative sizes of the contour measurement value of the first area and the microscope measurement value of the first area; adjusting the ADI profile parameter according to the difference between the contour measurement value of the first area and the microscope measurement value of the first area until the contour measurement value of the first area is consistent with the microscope measurement value of the first area, wherein when the contour measurement value of the first area is consistent with the microscope measurement value of the first area, the ADI profile parameter is the optimal ADI profile parameter; in the step of extracting the contour of the graphic in the patterned photoresist layer, the contour of the graphic of the second area in the image of the patterned photoresist layer is extracted according to the optimal ADI profile parameter.

[0012] Optionally, the graphic complexity of the first area is less than that of the second area.

[0013] Optionally, the second region has a pattern of an SRAM device.

[0014] Optionally, the step of performing a second measurement on the patterned etched layer to obtain the outline of the pattern in the patterned etched layer includes: performing a second measurement on the patterned etched layer to obtain an image of the patterned etched layer; and extracting the outline of the pattern in the patterned etched layer based on the image of the patterned etched layer.

[0015] Optionally, the step of performing a second measurement on the patterned etched layer to obtain the outline of the pattern in the patterned etched layer further includes: setting AEI profile parameters after obtaining the image of the patterned etched layer and before extracting the outline of the pattern in the patterned etched layer.

[0016] Optionally, in the step of performing a second measurement on the patterned etched layer, a microscope measurement value of a third area in the patterned etched layer is further obtained; the step of setting AEI profile parameters includes: extracting the contour of the pattern in the third area in the image of the patterned etched layer; measuring the contour of the extracted pattern in the third area to obtain a contour measurement value of the third area; comparing the relative sizes of the contour measurement value of the third area and the microscope measurement value of the third area; and adjusting the AEI profile parameters according to the difference between the contour measurement value of the third area and the microscope measurement value of the third area until the contour measurement value of the third area is consistent with the microscope measurement value of the third area, wherein when the contour measurement value of the third area is consistent with the microscope measurement value of the third area, the AEI profile parameters are optimal AEI profile parameters; in the step of extracting the contour of the pattern in the patterned etched layer, the contour of the pattern in the fourth area in the image of the patterned etched layer is extracted according to the optimal AEI profile parameters.

[0017] Optionally, the complexity of the graphics in the third area is less than that of the fourth area.

[0018] Optionally, the fourth region has a pattern of an SRAM device.

[0019] Optionally, the step of performing measurement and analysis based on at least one of the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer includes: measuring the profile of the pattern in the patterned photoresist layer to obtain a photolithography profile measurement value; measuring the profile of the pattern in the patterned etched layer to obtain an etching profile measurement value; and obtaining an etching measurement value based on the difference between the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer.

[0020] Optionally, in at least one of the steps of obtaining the photolithography profile measurement value and obtaining the etching profile measurement value, the graphic information includes: at least one of: line width and its changing trend, line spacing and its changing trend, pitch and its changing trend, length and its changing trend, extension distance and its changing trend, curvature radius and its changing trend, endpoint movement distance and its movement law, and line segment movement distance and its movement trend.

[0021] Optionally, in the step of obtaining etching measurement values, the etching measurement values ​​include at least one of an etching offset value and a distribution law of the etching offset value.

[0022] Accordingly, the present invention further provides a semiconductor structure measurement and analysis device, comprising:

[0023] A process module, wherein the process module is suitable for providing a layer to be etched, wherein the layer to be etched has a patterned photoresist layer thereon; the process module is also suitable for etching the layer to be etched using the patterned photoresist layer as a mask to form a patterned etched layer; a measurement module, wherein the measurement module is suitable for performing a first measurement on the patterned photoresist layer to obtain the outline of the pattern in the patterned photoresist layer; the measurement module is also suitable for performing a second measurement on the patterned etched layer to obtain the outline of the pattern in the patterned etched layer; and an analysis module, wherein the analysis module is suitable for performing measurement and analysis based on at least one of the outline of the pattern in the patterned photoresist layer and the outline of the pattern in the patterned etched layer.

[0024] Optionally, the measurement module includes: a detection unit, which is suitable for performing a first measurement on the patterned photoresist layer to obtain an image of the patterned photoresist layer; the detection unit is also suitable for performing a second measurement on the patterned etched layer to obtain an image of the patterned etched layer; an identification unit, which is suitable for extracting the outline of the pattern in the patterned photoresist layer based on the image of the patterned photoresist layer; the identification unit is also suitable for extracting the outline of the pattern in the patterned etched layer based on the image of the patterned photoresist layer.

[0025] Optionally, the measurement module further includes: a parameter setting unit, wherein the parameter setting unit is suitable for setting ADI profile parameters; the parameter setting unit is also suitable for setting AEI profile parameters.

[0026] Optionally, the detection unit performs a first measurement on the patterned photoresist layer and obtains a microscope measurement value of a first area in the patterned photoresist layer; the detection unit performs a second measurement on the patterned etched layer and obtains a microscope measurement value of a third area in the patterned etched layer; the recognition unit extracts the contour of the graphic of the first area in the image of the patterned photoresist layer; the recognition unit also extracts the contour of the graphic of the third area in the image of the patterned etched layer; the parameter setting unit includes: a measurer, the measurer is suitable for measuring the contour of the extracted graphic of the first area to obtain the contour measurement value of the first area; the measurer is also suitable for measuring the contour of the extracted graphic of the third area to obtain the contour measurement value of the third area; a comparator, the comparator is suitable for comparing the relative sizes of the contour measurement value of the first area and the microscope measurement value of the first area; the comparator is also suitable for comparing the relative sizes of the contour measurement value of the third area and the microscope measurement value of the third area; an adjuster, the The adjuster is adapted to adjust the ADI profile parameter until the profile measurement value of the first area is consistent with the microscopic measurement value of the first area according to the difference between the profile measurement value of the first area and the microscopic measurement value of the first area, wherein when the profile measurement value of the first area is consistent with the microscopic measurement value of the first area, the ADI profile parameter is an optimal ADI profile parameter; the adjuster is further adapted to adjust the AEI profile parameter until the profile measurement value of the third area is consistent with the microscopic measurement value of the third area according to the difference between the profile measurement value of the third area and the microscopic measurement value of the third area, wherein when the profile measurement value of the third area is consistent with the microscopic measurement value of the third area, the AEI profile parameter is an optimal AEI profile parameter; the recognition unit further extracts the profile of the pattern of the second area in the image of the patterned photoresist layer according to the optimal ADI profile parameter; the recognition unit further extracts the profile of the pattern of the fourth area in the image of the patterned etched layer according to the optimal AEI profile parameter.

[0027] Optionally, the analysis module includes: a first measurer, which is suitable for measuring the profile of the pattern in the patterned photoresist layer to obtain a photolithography profile measurement value; a second measurer, which is suitable for measuring the profile of the pattern in the patterned etched layer to obtain an etching profile measurement value; and an analyzer, which is suitable for obtaining an etching measurement value based on the difference between the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer.

[0028] In addition, the present invention also provides a readable storage medium having a computer program stored thereon, and the computer program is executed by a processor to implement the steps of the measurement and analysis method of the present invention.

[0029] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0030] In the technical solution of the present invention, before etching the layer to be etched, a first measurement is performed on the patterned photoresist layer to obtain the outline of the pattern in the patterned photoresist layer; after etching the layer to be etched, a second measurement is performed on the patterned etched layer to obtain the outline of the pattern in the patterned etched layer; and measurement and analysis are performed based on at least one of the outline of the pattern in the patterned photoresist layer and the outline of the pattern in the patterned etched layer. Performing measurement and analysis based on the outline of the pattern can effectively expand the scope of analysis data, improve the reliability of measurement data, achieve global analysis of measurement data, and effectively improve the reliability and completeness of measurement and analysis. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 1 is a flow chart of an embodiment of a semiconductor structure measurement and analysis method according to the present invention;

[0032] Figure 2 and Figure 3 1 is a schematic structural diagram of various steps of providing a layer to be etched having a patterned photoresist layer in one embodiment of a semiconductor structure measurement and analysis method of the present invention;

[0033] Figure 4 1 is a flow chart of the step of performing a first measurement on the patterned photoresist layer to obtain the outline of the pattern in the patterned photoresist layer in one embodiment of the measurement and analysis method for a semiconductor structure of the present invention;

[0034] Figure 5 1 is a schematic diagram of an image of the patterned photoresist layer obtained by performing a first measurement on the patterned photoresist layer in an embodiment of the semiconductor structure measurement and analysis method of the present invention;

[0035] Figure 6 1 is a flow chart of steps for setting ADI profile parameters in an embodiment of a semiconductor structure measurement and analysis method according to the present invention;

[0036] Figure 7 is a schematic diagram of extracting the outline of a patterned photoresist layer in one embodiment of a semiconductor structure measurement and analysis method of the present invention;

[0037] Figure 8 2 is a schematic diagram of a structure in which the etched layer 220 is formed in accordance with an embodiment of a method for measuring and analyzing a semiconductor structure according to the present invention;

[0038] Figure 9 1 is a flow chart of the step of performing a second measurement on the patterned etched layer to obtain the outline of the pattern in the patterned etched layer in one embodiment of the semiconductor structure measurement and analysis method of the present invention;

[0039] Figure 10 is a schematic diagram of an image of a patterned photoresist layer obtained by performing a second measurement on the patterned etched layer in one embodiment of the semiconductor structure measurement and analysis method of the present invention;

[0040] Figure 11 1 is a flow chart of steps for setting AEI profile parameters in an embodiment of a method for measuring and analyzing a semiconductor structure according to the present invention;

[0041] Figure 12 is a schematic diagram of extracting the profile of a patterned etched layer in one embodiment of a semiconductor structure measurement and analysis method of the present invention;

[0042] Figure 13 1 is a flow chart of the steps of performing measurement and analysis based on at least one of the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer in one embodiment of the semiconductor structure measurement and analysis method of the present invention;

[0043] Figure 14 1 is a schematic diagram of a profile overlay obtained in the step of obtaining an etching measurement value based on a difference between a profile of a pattern in the patterned photoresist layer and a profile of a pattern in the patterned etched layer in one embodiment of a method for measuring and analyzing a semiconductor structure of the present invention;

[0044] Figure 15 Schematic diagram of etching offset values ​​within a larger range obtained in the step of obtaining etching measurement values ​​based on the difference between the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer in one embodiment of the semiconductor structure measurement and analysis method of the present invention;

[0045] Figure 16 It is a functional block diagram of an embodiment of a semiconductor structure measurement and analysis device of the present invention. DETAILED DESCRIPTION

[0046] As can be seen from the background art, conventional semiconductor structure measurement and analysis methods often have problems such as single data structure and low reliability of measurement results.

[0047] Generally, semiconductor structure metrology and analysis are performed using a critical dimension scanning electron microscope (CD-SEM). CD-SEM is primarily used for critical dimension (CD) linewidth measurement and online monitoring during semiconductor structure R&D and mass production.

[0048] The main process of the CD-SEM measurement and analysis method is: scanning through the SEM to obtain the grayscale signal of the SEM image and form a grayscale distribution map; based on the grayscale distribution map, obtaining a topography signal at a specified measurement location to indicate the change in the topographic contour of the measurement location; performing mathematical processing on the topography signal, such as derivation and fitting, etc.; and obtaining the line width based on the mathematically processed topography signal.

[0049] This measurement and analysis solution is more suitable for one-dimensional graphics and is less applicable to more complex two-dimensional graphics. Furthermore, when an arc exists at the specified measurement location, the line width obtained by this measurement and analysis method is not feasible. Furthermore, this measurement and analysis method can only obtain the line width between points and cannot obtain the line width distribution over a larger range. Furthermore, the etch bias is only the etch bias at the specified measurement location and cannot be used to determine the etch bias elsewhere, making it impossible to perform a global analysis of line width, etch bias, and other information.

[0050] To solve the technical problem, the present invention provides a method for measuring and analyzing a semiconductor structure, comprising: providing a layer to be etched, wherein the layer to be etched has a patterned photoresist layer thereon; performing a first measurement on the patterned photoresist layer to obtain an outline of a pattern in the patterned photoresist layer; etching the layer to be etched using the patterned photoresist layer as a mask to form a patterned etched layer; performing a second measurement on the patterned etched layer to obtain an outline of a pattern in the patterned etched layer; and performing measurement and analysis based on at least one of the outline of the pattern in the patterned photoresist layer and the outline of the pattern in the patterned etched layer.

[0051] In the technical solution of the present invention, measurement analysis is performed based on the outline of the graphic, which can effectively expand the scope of analysis data, improve the reliability of measurement data, realize global analysis of measurement data, and effectively improve the reliability and completeness of measurement analysis.

[0052] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0053] refer to Figure 1, which shows a flow chart of an embodiment of a semiconductor structure measurement and analysis method of the present invention.

[0054] The measurement and analysis method includes:

[0055] Step S110, providing a layer to be etched, wherein the layer to be etched has a patterned photoresist layer thereon;

[0056] Step S120, performing a first measurement on the patterned photoresist layer to obtain an outline of a pattern in the patterned photoresist layer;

[0057] Step S130, etching the to-be-etched layer using the patterned photoresist layer as a mask to form a patterned etched layer;

[0058] Step S140 , performing a second measurement on the patterned etched layer to obtain a profile of a pattern in the patterned etched layer;

[0059] Step S150 , performing measurement and analysis based on at least one of the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer.

[0060] The technical solution of the semiconductor structure measurement and analysis method embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

[0061] like Figure 1 As shown, the measurement and analysis method includes: step S110, providing a layer to be etched having a patterned photoresist layer, wherein the pattern of the photoresist layer is the pattern to be measured and analyzed.

[0062] In some embodiments of the present invention, step S110, providing a layer to be etched, includes: Figure 2 As shown, a layer to be etched 221 is provided; a photoresist 231 is formed on the layer to be etched 221; Figure 3 As shown, the photoresist 231 is patterned to form a patterned photoresist 230 .

[0063] like Figure 2 As shown, in some embodiments, in the step of providing a layer to be etched, a substrate 210 is provided, and the substrate 210 has a layer to be etched 221. Specifically, the substrate 210 is used to provide mechanical support, and the layer to be etched 221 is used to provide a process basis.

[0064] In some specific embodiments, the substrate 210 may be a silicon substrate. In other embodiments of the present invention, the substrate may also be other materials suitable for use as a substrate.

[0065] The layer to be etched 221 is a patterned object to be etched to form an etched layer. The material and formation process of the layer to be etched 221 are determined based on the function of the etched layer to be formed from the layer to be etched 221.

[0066] In some embodiments, the layer to be etched 221 is suitable for forming the gate of an SRAM device, and the material of the layer to be etched 221 can be polysilicon. In some embodiments, the layer to be etched 221 is suitable for forming the active region of an SRAM device, and the material of the layer to be etched 221 can be single crystal silicon or other semiconductor materials. Specifically, the layer to be etched 221 can be formed on the substrate 210 by deposition.

[0067] It should be noted that, in other embodiments of the present invention, the layer to be etched may also be used to form other semiconductor structures. The material and formation method of the layer to be etched may vary with the change of the semiconductor structure to be formed.

[0068] Continue to refer Figure 2 After providing the layer to be etched 221 , a photoresist 231 is formed on the layer to be etched 221 .

[0069] The photoresist 231 is suitable for transferring patterns. The photoresist 231 can be a photoresist suitable for patterning. Specifically, the photoresist 231 can be formed on the surface of the layer to be etched 231 by spin coating.

[0070] After forming the photoresist 231, Figure 3 As shown, the photoresist 231 (as Figure 2 As shown), the photoresist 230 is patterned to form a patterned photoresist.

[0071] Step S110, the step of providing a layer to be etched having a patterned photoresist layer also includes: forming a design layout; manufacturing a mask template based on the design layout; in the process of patterning the photoresist 231, using the mask template to expose and develop the photoresist 231, so that the design layout on the mask template is transferred to the photoresist 231 to form a patterned photoresist 230.

[0072] Continue to refer Figure 1 After providing a layer to be etched having a patterned photoresist, the measurement and analysis method further includes: step S120, performing a first measurement on the patterned photoresist layer to obtain a profile of a pattern in the patterned photoresist layer.

[0073] In step S120 , a first measurement is performed to measure the exposed and developed photoresist layer to obtain a profile of a pattern in the photoresist.

[0074] like Figure 4 As shown, in some embodiments of the present invention, the step of performing a first measurement on the patterned photoresist layer to obtain the outline of the pattern in the patterned photoresist layer includes: step S121, performing a first measurement on the patterned photoresist layer to obtain an image of the patterned photoresist layer (such as Figure 5 As shown); Step S122, extracting the outline of the pattern in the patterned photoresist layer according to the image of the patterned photoresist layer.

[0075] In some embodiments, in step S121, the first measurement of the patterned photoresist layer is performed using a scanning electron microscope (SEM). Specifically, the measurement using a scanning electron microscope is performed using a critical dimensions scanning electron microscope (CD-SEM). A critical dimensions scanning electron microscope (CD-SEM) has a high resolution, and its use can effectively ensure the acquisition of high-precision measurement data.

[0076] In some embodiments, in step S122 , in the step of extracting the outline of the pattern in the patterned photoresist layer, the outline of the pattern in the patterned photoresist layer may be extracted by SEM profiling technology.

[0077] like Figure 4 In some of the embodiments shown, step S120, the step of performing a first measurement on the patterned photoresist layer to obtain the contour of the pattern in the patterned photoresist layer also includes: after obtaining the image of the patterned photoresist layer, before extracting the contour of the pattern in the patterned photoresist layer, executing step S123 to set the ADI contour parameters.

[0078] The scanning electron microscope has a high resolution. Various shapes on the patterned photoresist surface may interfere with the extraction of the pattern outline. Reasonable setting of the ADI profile parameters can effectively reduce the influence of interfering patterns and improve the accuracy of the extracted pattern outline.

[0079] Specifically, the ADI profile parameters may include: at least one of a grayscale parameter and a noise parameter, wherein the adjustment of the grayscale parameter can affect the sensitivity of extracting the profile of the pattern in the patterned photoresist layer; and the adjustment of the noise parameter can affect the accuracy of extracting the profile of the pattern in the patterned photoresist layer.

[0080] like Figure 6As shown, in some embodiments, in step S121, in the step of performing a first measurement on the patterned photoresist layer, a microscope measurement value of a first area in the patterned photoresist layer is also obtained; in step S123, the step of setting the ADI profile parameter includes: step S123a, extracting the contour of the graphic of the first area in the image of the patterned photoresist layer; step S123b, measuring the contour of the extracted graphic of the first area to obtain the contour measurement value of the first area; step S123c, comparing the relative sizes of the contour measurement value of the first area and the microscope measurement value of the first area ; Step S123d, adjusting the ADI profile parameter until the profile measurement value of the first area is consistent with the microscope measurement value of the first area according to the difference between the profile measurement value of the first area and the microscope measurement value of the first area, wherein when the profile measurement value of the first area is consistent with the microscope measurement value of the first area, the ADI profile parameter is the optimal ADI profile parameter; Step S122, in the step of extracting the profile of the patterned photoresist layer, extracting the profile of the pattern of the second area in the image of the patterned photoresist layer according to the optimal ADI profile parameter.

[0081] By comparing the contours of the graphics in a preset area (for example, the first area), the ADI contour parameters are set by feedback, that is, based on the influence of the ADI contour parameters on the extraction of the contour of the graphics, the ADI contour parameters are adjusted, which can effectively prove the accuracy of extracting the contour of the graphics in the patterned photoresist layer.

[0082] It should be noted that the outline of the graphic of the first area is consistent with the design layout of the first area, which means that based on the set ADI contour parameters, the difference between the extracted outline of the graphic of the first area and the design layout of the first area is within a preset range, that is, the outline of the graphic of the first area is considered to be consistent with the design layout of the first area.

[0083] In some embodiments, the graphic complexity of the first region is less than that of the second region. Specifically, less graphic complexity means that the graphic line width is larger, the graphic density is smaller, and the graphic shape is simpler; greater graphic complexity means that the image line width is smaller, the image density is larger, and the image shape is simpler.

[0084] Specifically, the second region has a pattern of an SRAM device. Figure 3 and Figure 7 In some embodiments shown, the second region is an image having an SRAM device. Figure 7 As shown, the pattern of the second region may be a pattern of polysilicon of an SRAM device; the pattern of the second region may also be a pattern of an active region of an SRAM device.

[0085] It should be noted that the second region having the pattern of the SRAM device is only an example. In other embodiments of the present invention, the second region may also have images of other devices. In some embodiments, the second region may also have other complex two-dimensional patterns.

[0086] Continue to refer Figure 1 The measurement and analysis method further includes: step S130, using the patterned photoresist layer as a mask to etch the layer to be etched to form a patterned etched layer.

[0087] After forming a patterned photoresist layer, as Figure 8 As shown, the patterned photoresist 230 (as Figure 3 As shown) is a mask, the layer to be etched 221 (as shown) Figure 3 ) is etched to form the etched layer 220.

[0088] During the etching process of the layer to be etched 221 , the pattern of the patterned photoresist 230 is transferred to the layer to be etched 221 to form the etched layer 220 . The etched layer 220 also has a pattern consistent with the pattern in the patterned photoresist 230 .

[0089] In some embodiments, the step of etching the layer to be etched 221 may be performed by anisotropic etching. In other embodiments, the step of etching the layer to be etched 221 may be performed by other methods.

[0090] It should be noted that in some embodiments of the present invention, after etching the to-be-etched layer 221 to form the etched layer 220, the measurement and analysis method further includes removing the patterned photoresist 230. Removing the patterned photoresist 230 after forming the etched layer 220 effectively prevents interference of the patterned photoresist 230 with subsequent data measurement, thereby effectively improving the precision and accuracy of the measured data.

[0091] Continue to refer Figure 1 After forming the patterned etched layer, the measurement and analysis method further includes: step S140, performing a second measurement on the patterned etched layer to obtain the outline of the pattern in the patterned etched layer.

[0092] In step S140 , a second measurement is performed on the etched layer to obtain a profile of the pattern in the etched layer.

[0093] like Figure 9As shown, in some embodiments of the present invention, step S140, performing a second measurement on the patterned etched layer to obtain the outline of the pattern in the patterned etched layer includes: step S141, performing a second measurement on the patterned etched layer to obtain an image of the patterned etched layer (such as Figure 10 As shown); Step S142, extracting the outline of the pattern in the patterned etched layer according to the image of the patterned etched layer.

[0094] In some embodiments, in step S141, the second measurement of the patterned etched layer is performed using a scanning electron microscope. Specifically, the measurement is performed using a feature size scanning electron microscope.

[0095] In some embodiments, in step S142 , in the step of extracting the outline of the pattern in the patterned etched layer, the outline of the pattern in the patterned photoresist may be extracted by SEM profiling technology.

[0096] like Figure 9 In some of the embodiments shown, step S140, the step of performing a second measurement on the patterned etched layer to obtain the outline of the pattern in the patterned etched layer also includes: after obtaining the image of the patterned etched layer, before extracting the outline of the pattern in the patterned etched layer, step S143, setting the AEI profile parameters.

[0097] The scanning electron microscope has a high resolution. Various shapes on the patterned photoresist surface may interfere with the extraction of the pattern outline. Reasonable setting of AEI profile parameters can effectively reduce the influence of interfering patterns and improve the accuracy of the extracted pattern outline.

[0098] Specifically, the AEI profile parameters may include: at least one of a grayscale parameter and a noise parameter, wherein adjustment of the grayscale parameter can affect the sensitivity of extracting the profile of the pattern in the patterned etched layer; and adjustment of the noise parameter can improve the accuracy of extracting the profile of the pattern in the patterned etched layer.

[0099] like Figure 11As shown, in some embodiments, in step S141, in the step of performing a second measurement on the patterned etched layer, a microscope measurement value of a third region in the patterned etched layer is further obtained; in step S143, the step of setting AEI profile parameters includes: step S143a, extracting the contour of the pattern of the third region in the image of the patterned etched layer; step S143b, measuring the contour of the extracted pattern of the third region to obtain the contour measurement value of the third region; step S143c, comparing the relative sizes of the contour measurement value of the third region and the microscope measurement value of the third region ; Step S143d, adjusting the AEI profile parameter until the profile measurement value of the third area is consistent with the microscope measurement value of the third area according to the difference between the profile measurement value of the third area and the microscope measurement value of the third area, wherein when the profile measurement value of the third area is consistent with the microscope measurement value of the third area, the AEI profile parameter is an optimal AEI profile parameter; Step S142, in the step of extracting the profile of the pattern in the patterned etched layer, extracting the profile of the pattern in the fourth area of ​​the image of the patterned etched layer according to the optimal AEI profile parameter.

[0100] By comparing the contours of the graphics in a preset area (e.g., the third area), the AEI contour parameters are set in a feedback manner, that is, the AEI contour parameters are adjusted based on their influence on the extraction of the contour of the graphics, which can effectively prove the accuracy of extracting the contour of the graphics in the patterned etched layer.

[0101] It should be noted that the outline of the graphic in the third area is consistent with the design layout of the third area means that, based on the set AEI outline parameters, the difference between the extracted outline of the graphic in the third area and the design layout of the third area is within a preset range, that is, the outline of the graphic in the third area is considered to be consistent with the design layout of the third area.

[0102] It should also be noted that, in some embodiments, the third area and the first area are the same area. In other embodiments of the present invention, the third area may also be another area different from the first area.

[0103] In some embodiments, the graphic complexity of the third region is less than that of the fourth region. Specifically, the fourth region has a graphic of an SRAM device. Figure 8 and Figure 12 In some embodiments shown, the fourth region is an image having an SRAM device. Figure 12 As shown, the pattern of the fourth region may be a pattern of polysilicon of an SRAM device; the pattern of the fourth region may also be a pattern of an active region of an SRAM device.

[0104] It should be noted that the fourth region having an SRAM device pattern is merely an example. In other embodiments of the present invention, the fourth region may also have images of other devices. In some embodiments, the fourth region may also have other complex two-dimensional patterns. It should also be noted that in some embodiments, the fourth region and the second region are the same region. In other embodiments of the present invention, the fourth region may also be another region different from the second region.

[0105] Continue to refer Figure 1 The measurement and analysis method further includes: step S150, performing measurement and analysis based on at least one of the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer.

[0106] Measurement analysis based on the outline of the graphic can effectively expand the scope of analysis data, improve the reliability of measurement data, realize global analysis of measurement data, and effectively improve the reliability and completeness of measurement analysis.

[0107] like Figure 13 As shown, in some embodiments of the present invention, step S150, the step of performing measurement and analysis based on at least one of the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer includes: step S151, measuring the profile of the pattern in the patterned photoresist layer to obtain a photolithography profile measurement value; step S152, measuring the profile of the pattern in the patterned etched layer to obtain an etching profile measurement value; step S153, obtaining an etching measurement value based on the difference between the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer.

[0108] In step S151, in the step of measuring the profile of the pattern in the patterned photoresist layer, a Gauge tool may be used to perform measurement to obtain the photolithography profile measurement value. Specifically, the obtained photolithography profile measurement value may include conventional ADI measurement data.

[0109] For example, Figure 3 As shown, the photolithography profile measurement value may include: the line width (CD adi ) and its changing trend, line distance (Space adi ) and its changing trend, pitch (Pitch adi ) and its changing trend, length and its changing trend, and extension distance and its changing trend, etc., at least one of the conventional measurement data.

[0110] In addition, the obtained lithography profile measurement values ​​may also include data other than conventional ADI measurement data. For example, Figure 7 As shown, the photolithography profile measurement value may also include: the curvature radius of the pattern in the patterned photoresist and its change trend (such as Figure 7 As shown in the middle circle 241), the end point movement distance and its movement law (as ... Figure 7 As shown in the middle circle 242), the moving distance of the line segment and its moving trend (as ... Figure 7 At least one of (shown in circle 243).

[0111] In step S152, in the step of measuring the profile of the pattern in the patterned etched layer, a Gauge tool may be used to perform measurement to obtain the etching profile measurement value. Specifically, the obtained etching profile measurement value may include conventional AEI measurement data.

[0112] For example, Figure 8 As shown, the etching profile measurement value may include: the line width (CD aei ) and its changing trend, line distance (Space aei ) and its changing trend, pitch (Pitch aei ) and its changing trend, length and its changing trend, and extension distance and its changing trend, etc., at least one of the conventional measurement data.

[0113] In addition, the obtained etch profile measurement values ​​may also include data other than conventional AEI measurement data. For example, Figure 12 As shown, the etching profile measurement value may also include: the curvature radius of the pattern in the patterned etched layer and its change trend (such as Figure 12 As shown in the middle circle 251), the end point movement distance and its movement law (as ... Figure 12 As shown in the middle circle 252), the moving distance of the line segment and its moving trend (as ... Figure 12 At least one of those shown in the middle circle 253).

[0114] Step S153, in the step of obtaining etching measurement values ​​according to the difference between the outline of the pattern in the patterned photoresist layer and the outline of the pattern in the patterned etched layer, the outline of the pattern in the patterned photoresist layer and the outline of the pattern in the patterned etched layer can be superimposed to obtain an outline superposition image (such as Figure 14 As shown), the Gauge tool can be used to measure the profile overlay image to obtain the etching measurement value.

[0115] By measuring the profile overlay, we can obtain the differences between the corresponding lithography profile measurement values ​​and the etching profile measurement values ​​within a larger range, as well as the distribution of the differences. This can provide the status and fluctuation of the etching process within a larger range, and even the status of the etching process within the global range, thereby providing a more comprehensive characterization for timely understanding of process performance and pointing out improvement directions. For example, Figure 15 As shown, in the step of obtaining the etching measurement value, the etching measurement value includes at least one of an etching bias value and a distribution law of the etching bias value.

[0116] It should be noted that the measurement and analysis method further includes: improving a process step based on at least one of the lithography profile measurement value, the etch profile measurement value, and the etch measurement value. For example, based on the etch offset value and the distribution pattern of the etch offset value, an etch load distribution within a larger range, or even globally, can be obtained during the etching process; based on the obtained etch load distribution, the etching method and the pattern distribution can be adjusted to achieve consistency in the final etch profile measurement value (e.g., to achieve consistency in the line width of the etched layer).

[0117] Correspondingly, the present invention also provides a semiconductor structure measurement and analysis device.

[0118] refer to Figure 16 , shows a functional block diagram of an embodiment of a semiconductor structure measurement and analysis device of the present invention.

[0119] The measurement and analysis device comprises:

[0120] A process module 310 is adapted to provide a layer to be etched, wherein the layer to be etched has a patterned photoresist layer thereon; the process module 310 is further adapted to etch the layer to be etched using the patterned photoresist layer as a mask to form a patterned etched layer;

[0121] a measurement module 320 adapted to perform a first measurement on the patterned photoresist layer to obtain a profile of a pattern in the patterned photoresist layer; and further adapted to perform a second measurement on the patterned etched layer to obtain a profile of a pattern in the patterned etched layer;

[0122] The analysis module 330 is adapted to perform measurement analysis based on at least one of a profile of a pattern in the patterned photoresist layer and a profile of a pattern in the patterned etched layer.

[0123] It should be noted that, in some embodiments of the present invention, the measurement and analysis device is suitable for executing the steps of the measurement and analysis method of the present invention. The specific technical solution of the measurement and analysis device can refer to the embodiment of the measurement and analysis method mentioned above.

[0124] The technical solution of the semiconductor structure measurement and analysis method embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

[0125] The process module 310 is used to form a patterned photoresist layer and a patterned layer to be etched.

[0126] In some embodiments of the present invention, the process unit 310 may be a semiconductor manufacturing system for the entire photolithography process including an optical system, mask, photoresist, and etching process. In other embodiments of the present invention, the process unit may also be a control device connected to the semiconductor manufacturing system.

[0127] like Figure 3 As shown, the patterned photoresist 230 is a photoresist layer having a pattern after exposure and development. The pattern of the photoresist 230 is formed by transferring the pattern of the design layout and is consistent with the pattern of the design layout.

[0128] like Figure 8 As shown, the etched layer 220 is a material layer having a pattern formed by etching. The pattern of the etched layer 220 is transferred from the patterned photoresist layer 230 and is consistent with the pattern of the patterned photoresist layer 230.

[0129] The measurement module 320 is adapted to perform measurement to obtain a pattern profile.

[0130] like Figure 16 As shown, in some embodiments of the present invention, the measurement module 320 includes: a detection unit 321, wherein the detection unit 321 is suitable for performing a first measurement on the patterned photoresist layer to obtain an image of the patterned photoresist layer; the detection unit 321 is also suitable for performing a second measurement on the patterned etched layer to obtain an image of the patterned etched layer; an identification unit 322, wherein the identification unit 322 is suitable for extracting the outline of the pattern in the patterned photoresist layer according to the image of the patterned photoresist layer; the identification unit 322 is also suitable for extracting the outline of the pattern in the patterned etched layer according to the image of the patterned photoresist layer.

[0131] In some embodiments, the measurement module 320 includes a scanning electron microscope (SEM). Specifically, the detection unit 321 may be a critical dimension scanning electron microscope (CD-SEM). A critical dimension scanning electron microscope has a high resolution, and its use can effectively ensure the acquisition of high-precision measurement data.

[0132] In some embodiments, the measurement module 320 further includes: a parameter setting unit 323, wherein the parameter setting unit 323 is suitable for setting ADI profile parameters; the parameter setting unit is also suitable for setting AEI profile parameters.

[0133] The scanning electron microscope has a high resolution, and the various shapes of the patterned photoresist surface may interfere with the extraction of the contour of the pattern. The parameter setting unit 323 can reasonably set the ADI contour parameters and the AEI contour parameters, which can effectively reduce the impact of interfering patterns and improve the accuracy of the contour of the extracted pattern.

[0134] Specifically, the ADI profile parameters may include: at least one of a grayscale parameter and a noise parameter, wherein the adjustment of the grayscale parameter can affect the sensitivity of extracting the profile of the pattern in the patterned photoresist layer; and the adjustment of the noise parameter can affect the accuracy of extracting the profile of the pattern in the patterned photoresist layer.

[0135] Specifically, the AEI profile parameters may include: at least one of a grayscale parameter and a noise parameter, wherein adjustment of the grayscale parameter can affect the sensitivity of extracting the profile of the pattern in the patterned etched layer; and adjustment of the noise parameter can improve the accuracy of extracting the profile of the pattern in the patterned etched layer.

[0136] like Figure 16In some embodiments shown, the detection unit 321 performs a first measurement on the patterned photoresist layer and obtains a microscope measurement value of a first area in the patterned photoresist layer; the detection unit 321 performs a second measurement on the patterned etched layer and obtains a microscope measurement value of a third area in the patterned etched layer; the recognition unit 322 extracts the outline of the pattern of the first area in the image of the patterned photoresist layer; the recognition unit 322 also extracts the outline of the pattern of the third area in the image of the patterned etched layer; the recognition unit 322 extracts the image of the patterned photoresist layer The recognition unit 322 further extracts the contour of the graphic of the third area in the image of the patterned etched layer; the parameter setting unit 323 includes: a measurer 323c, the measurer 323c is suitable for measuring the contour of the extracted graphic of the first area to obtain the contour measurement value of the first area; the measurer 323c is also suitable for measuring the contour of the extracted graphic of the third area to obtain the contour measurement value of the third area; a comparator 323a, the comparator 323a is suitable for comparing the relative sizes of the contour measurement value of the first area and the microscope measurement value of the first area The comparator 323a is further adapted to compare the relative sizes of the contour measurement value of the third area and the microscope measurement value of the third area; the adjuster 323b is adapted to adjust the ADI contour parameter according to the difference between the contour measurement value of the first area and the microscope measurement value of the first area until the contour measurement value of the first area is consistent with the microscope measurement value of the first area, wherein when the contour measurement value of the first area is consistent with the microscope measurement value of the first area, the ADI contour parameter is the optimal ADI contour parameter; the adjuster 323b is further adapted to adjust the ADI contour parameter according to the difference between the contour measurement value of the first area and the microscope measurement value of the first area The difference between the profile measurement value of the third area and the microscope measurement value of the third area is adjusted, and the AEI profile parameter is adjusted until the profile measurement value of the third area is consistent with the microscope measurement value of the third area, wherein when the profile measurement value of the third area is consistent with the microscope measurement value of the third area, the AEI profile parameter is the optimal AEI profile parameter; the recognition unit 322 extracts the profile of the graphic of the second area in the image of the patterned photoresist layer according to the optimal AEI profile parameter; the recognition unit also extracts the profile of the graphic of the fourth area in the image of the patterned etched layer according to the optimal AEI profile parameter.

[0137] By comparing the contours of the graphics in a preset area (for example, the first area), the ADI contour parameters are set by feedback, that is, based on the influence of the ADI contour parameters on the extraction of the contour of the graphics, the ADI contour parameters are adjusted, which can effectively prove the accuracy of extracting the contour of the graphics in the patterned photoresist layer.

[0138] It should be noted that the outline of the graphic of the first area is consistent with the design layout of the first area, which means that based on the set ADI contour parameters, the difference between the extracted outline of the graphic of the first area and the design layout of the first area is within a preset range, that is, the outline of the graphic of the first area is considered to be consistent with the design layout of the first area.

[0139] In some embodiments, the graphic complexity of the first region is less than that of the second region. Specifically, less graphic complexity means that the graphic line width is larger, the graphic density is smaller, and the graphic shape is simpler; greater graphic complexity means that the image line width is smaller, the image density is larger, and the image shape is simpler.

[0140] Specifically, the second region has a pattern of an SRAM device. Figure 3 and Figure 7 In some embodiments shown, the second region is an image having an SRAM device. Figure 7 As shown, the pattern of the second region may be a pattern of polysilicon of an SRAM device; the pattern of the second region may also be a pattern of an active region of an SRAM device.

[0141] It should be noted that the second region having the pattern of the SRAM device is only an example. In other embodiments of the present invention, the second region may also have images of other devices. In some embodiments, the second region may also have other complex two-dimensional patterns.

[0142] By comparing the contours of the graphics in a preset area (e.g., the third area), the AEI contour parameters are set in a feedback manner, that is, the AEI contour parameters are adjusted based on their influence on the extraction of the contour of the graphics, which can effectively prove the accuracy of extracting the contour of the graphics in the patterned etched layer.

[0143] It should be noted that the outline of the graphic in the third area is consistent with the design layout of the third area means that, based on the set AEI outline parameters, the difference between the extracted outline of the graphic in the third area and the design layout of the third area is within a preset range, that is, the outline of the graphic in the third area is considered to be consistent with the design layout of the third area.

[0144] It should also be noted that, in some embodiments, the third area and the first area are the same area. In other embodiments of the present invention, the third area may also be another area different from the first area.

[0145] In some embodiments, the graphic complexity of the third region is less than that of the fourth region. Specifically, the fourth region has a graphic of an SRAM device. Figure 8 and Figure 12 In some embodiments shown, the fourth region is an image having an SRAM device. Figure 12 As shown, the pattern of the fourth region may be a pattern of polysilicon of an SRAM device; the pattern of the fourth region may also be a pattern of an active region of an SRAM device.

[0146] It should be noted that the fourth region having the pattern of the SRAM device is only an example. In other embodiments of the present invention, the fourth region may also have images of other devices. In some embodiments, the fourth region may also have other complex two-dimensional patterns.

[0147] It should also be noted that, in some embodiments, the fourth area and the second area are the same area. In other embodiments of the present invention, the fourth area may also be another area different from the second area.

[0148] Continue to refer Figure 16 The analysis module 330 of the measurement and analysis device is used to analyze the image contour obtained by the measurement module 320.

[0149] Measurement analysis based on the outline of the graphic can effectively expand the scope of analysis data, improve the reliability of measurement data, realize global analysis of measurement data, and effectively improve the reliability and completeness of measurement analysis.

[0150] In some embodiments of the present invention, the analysis module 330 includes: a first measurer 331, the first measurer 331 is suitable for measuring the profile of the pattern in the patterned photoresist layer to obtain a photolithography profile measurement value; a second measurer 332, the second measurer 332 is suitable for measuring the profile of the pattern in the patterned etched layer to obtain an etching profile measurement value; an analyzer 333, the analyzer 333 is suitable for obtaining an etching measurement value based on the difference between the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer.

[0151] At least one of the first measurer 331 and the second measurer 332 may be a gauge tool-based measurer, capable of obtaining the photolithography profile measurement value and the etching profile measurement value, respectively.

[0152] Among them, such as Figure 3 As shown, the photolithography profile measurement value may include: the line width (CD adi ) and its changing trend, line distance (Space adi ) and its changing trend, pitch (Pitch adi ) and its changing trend, length and its changing trend, and extension distance and its changing trend, etc., at least one of the conventional measurement data.

[0153] In addition, the obtained lithography profile measurement values ​​may also include data other than conventional ADI measurement data. For example, Figure 7 As shown, the photolithography profile measurement value may also include: the curvature radius of the pattern in the patterned photoresist and its change trend (such as Figure 7 As shown in the middle circle 241), the end point movement distance and its movement law (as ... Figure 7 As shown in the middle circle 242), the moving distance of the line segment and its moving trend (as ... Figure 7 At least one of (shown in circle 243).

[0154] like Figure 8 As shown, the etching profile measurement value may include: the line width (CD aei ) and its changing trend, line distance (Space aei ) and its changing trend, pitch (Pitch aei ) and its changing trend, length and its changing trend, and extension distance and its changing trend, etc., at least one of the conventional measurement data.

[0155] In addition, the obtained etch profile measurement values ​​may also include data other than conventional AEI measurement data. For example, Figure 12 As shown, the etching profile measurement value may also include: the curvature radius of the pattern in the patterned etched layer and its change trend (such as Figure 12 As shown in the middle circle 251), the end point movement distance and its movement law (as ... Figure 12 As shown in the middle circle 252), the moving distance of the line segment and its moving trend (as ... Figure 12 At least one of those shown in the middle circle 253).

[0156] The analyzer 333 can superimpose the outline of the pattern in the patterned photoresist layer and the outline of the pattern in the patterned etched layer to obtain an outline superposition image (eg, Figure 14 As shown), the Gauge tool can be used to measure the profile overlay image to obtain the etching measurement value.

[0157] By measuring the profile overlay, we can obtain the differences between the corresponding lithography profile measurement values ​​and the etching profile measurement values ​​within a larger range, as well as the distribution of the differences. This can provide the status and fluctuation of the etching process within a larger range, and even the status of the etching process within the global range, thereby providing a more comprehensive characterization for timely understanding of process performance and pointing out improvement directions. For example, Figure 15 As shown, the etching measurement value includes at least one of an etching bias value and a distribution law of the etching bias value.

[0158] In addition, the present invention also provides a readable storage medium having a computer program stored thereon, and the computer program is executed by a processor to implement the steps of the measurement and analysis method of the present invention.

[0159] The computer program stored on the readable storage medium is executed by the processor to implement the steps of the measurement and analysis method of the present invention. The specific technical solution of the readable storage medium can refer to the embodiment of the measurement and analysis method mentioned above.

[0160] In summary, before etching the layer to be etched, a first measurement is performed on the patterned photoresist layer to obtain the outline of the pattern in the patterned photoresist layer; after etching the layer to be etched, a second measurement is performed on the patterned etched layer to obtain the outline of the pattern in the patterned etched layer; and measurement and analysis are performed based on at least one of the outline of the pattern in the patterned photoresist layer and the outline of the pattern in the patterned etched layer. Performing measurement and analysis based on the outline of the pattern can effectively expand the scope of analysis data, improve the reliability of measurement data, enable global analysis of measurement data, and effectively improve the reliability and completeness of measurement and analysis.

[0161] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A method for measuring and analyzing a semiconductor structure, characterized in that: include: Providing a layer to be etched, wherein the layer to be etched has a patterned photoresist layer; Performing a first measurement on the patterned photoresist layer to obtain the outline of the pattern in the patterned photoresist layer, the step of performing the first measurement on the patterned photoresist layer to obtain the outline of the pattern in the patterned photoresist layer comprises: performing the first measurement on the patterned photoresist layer to obtain an image of the patterned photoresist layer; extracting the outline of the pattern in the patterned photoresist layer according to the image of the patterned photoresist layer; Using the patterned photoresist layer as a mask, etching the layer to be etched to form a patterned etched layer; Performing a second measurement on the patterned etched layer to obtain an outline of a pattern in the patterned etched layer, the step of performing a second measurement on the patterned etched layer to obtain an outline of the pattern in the patterned etched layer comprising: performing a second measurement on the patterned etched layer to obtain an image of the patterned etched layer; and extracting the outline of the pattern in the patterned etched layer based on the image of the patterned etched layer; Measurement analysis is performed based on at least one of a profile of a pattern in the patterned photoresist layer and a profile of a pattern in the patterned etched layer.

2. The measurement and analysis method according to claim 1, wherein: At least one of the step of performing a first measurement on the patterned photoresist layer and the step of performing a second measurement on the patterned etched layer is measured using a scanning electron microscope.

3. The measurement and analysis method according to claim 2, wherein: In the step of measuring by a scanning electron microscope, feature size measurement is performed by a scanning electron microscope.

4. The measurement and analysis method according to claim 1, wherein: The step of performing a first measurement on the patterned photoresist layer to obtain a profile of a pattern in the patterned photoresist layer further comprises: After obtaining the image of the patterned photoresist layer and before extracting the outline of the pattern in the patterned photoresist layer, ADI profile parameters are set.

5. The measurement and analysis method according to claim 4, wherein: In the step of performing a first measurement on the patterned photoresist layer, a microscope measurement value of a first area in the patterned photoresist layer is also obtained; The steps to set the ADI profile parameters include: extracting an outline of a pattern in the first region from the image of the patterned photoresist layer; measuring the contour of the extracted graphic of the first area to obtain a contour measurement value of the first area; comparing relative sizes of the contour measurement value of the first region and the microscopic measurement value of the first region; adjusting the ADI profile parameter according to a difference between the profile measurement value of the first area and the microscope measurement value of the first area until the profile measurement value of the first area is consistent with the microscope measurement value of the first area, wherein the ADI profile parameter is an optimal ADI profile parameter when the profile measurement value of the first area is consistent with the microscope measurement value of the first area; In the step of extracting the contour of the pattern in the patterned photoresist layer, the contour of the pattern in the second area in the image of the patterned photoresist layer is extracted according to the optimal ADI contour parameter.

6. The measurement and analysis method according to claim 5, wherein: The graphic complexity of the first area is less than that of the second area.

7. The measurement and analysis method according to claim 5 or 6, characterized in that: The second region has a pattern of an SRAM device.

8. The measurement and analysis method according to claim 1, wherein: The step of performing a second measurement on the patterned etched layer to obtain a profile of a pattern in the patterned etched layer further comprises: After obtaining the image of the patterned etched layer and before extracting the outline of the pattern in the patterned etched layer, AEI profile parameters are set.

9. The measurement and analysis method according to claim 8, wherein: In the step of performing a second measurement on the patterned etched layer, a microscope measurement value of a third region in the patterned etched layer is also obtained; The steps to set the AEI profile parameters include: extracting an outline of a pattern of the third region in the image of the patterned etched layer; Measuring the contour of the extracted graphic of the third region to obtain a contour measurement value of the third region; comparing the relative sizes of the contour measurement value of the third region and the microscope measurement value of the third region; adjusting the AEI profile parameter according to a difference between the profile measurement value of the third region and the microscope measurement value of the third region until the profile measurement value of the third region is consistent with the microscope measurement value of the third region, wherein the AEI profile parameter is an optimal AEI profile parameter when the profile measurement value of the third region is consistent with the microscope measurement value of the third region; In the step of extracting the outline of the pattern in the patterned etched layer, the outline of the pattern in the fourth area in the image of the patterned etched layer is extracted according to the optimal AEI profile parameter.

10. The measurement and analysis method according to claim 9, wherein: The complexity of the graphics of the third area is less than that of the fourth area.

11. The measurement and analysis method according to claim 9 or 10, characterized in that: The fourth region has a pattern of an SRAM device.

12. The measurement and analysis method according to claim 1, wherein: The step of measuring and analyzing at least one of the profile of the pattern in the patterned photoresist layer and the profile of the pattern in the patterned etched layer comprises: Measuring the profile of the pattern in the patterned photoresist layer to obtain a photolithography profile measurement value; measuring a profile of a pattern in the patterned etched layer to obtain an etch profile measurement value; An etching measurement value is obtained based on a difference between a profile of a feature in the patterned photoresist layer and a profile of a feature in the patterned etched layer.

13. The measurement and analysis method according to claim 12, wherein: In at least one of the steps of obtaining the photolithography profile measurement value and the step of obtaining the etching profile measurement value, the graphic information includes: at least one of: line width and its changing trend, line spacing and its changing trend, pitch and its changing trend, length and its changing trend, extension distance and its changing trend, curvature radius and its changing trend, endpoint movement distance and its movement law, and line segment movement distance and its movement trend.

14. The measurement and analysis method according to claim 12, wherein: In the step of obtaining etching measurement values, the etching measurement values ​​include at least one of an etching offset value and a distribution law of the etching offset value.

15. A semiconductor structure measurement and analysis device, characterized in that: include: A process module, wherein the process module is suitable for providing a layer to be etched, wherein the layer to be etched has a patterned photoresist layer thereon; The process module is further adapted to etch the layer to be etched using the patterned photoresist layer as a mask to form a patterned etched layer; A measurement module, wherein the measurement module is suitable for performing a first measurement on the patterned photoresist layer to obtain an outline of a pattern in the patterned photoresist layer; the measurement module is also suitable for performing a second measurement on the patterned etched layer to obtain an outline of a pattern in the patterned etched layer, the measurement module comprising: a detection unit, wherein the detection unit is suitable for performing a first measurement on the patterned photoresist layer to obtain an image of the patterned photoresist layer; the detection unit is also suitable for performing a second measurement on the patterned etched layer to obtain an image of the patterned etched layer; an identification unit, wherein the identification unit is suitable for extracting an outline of a pattern in the patterned photoresist layer based on the image of the patterned photoresist layer; the identification unit is also suitable for extracting an outline of a pattern in the patterned etched layer based on the image of the patterned photoresist layer; An analysis module is adapted to perform measurement analysis based on at least one of a profile of a pattern in the patterned photoresist layer and a profile of a pattern in the patterned etched layer.

16. The measurement and analysis device according to claim 15, wherein: The measurement module further comprises: a parameter setting unit, which is suitable for setting ADI profile parameters; the parameter setting unit is also suitable for setting AEI profile parameters.

17. The measurement and analysis device according to claim 16, wherein: The detection unit performs a first measurement on the patterned photoresist layer and obtains a microscope measurement value of a first area in the patterned photoresist layer; the detection unit performs a second measurement on the patterned etched layer and obtains a microscope measurement value of a third area in the patterned etched layer; The recognition unit extracts the outline of the pattern of the first area in the image of the patterned photoresist layer; The recognition unit further extracts the outline of the pattern of the third region in the image of the patterned etched layer; The parameter setting unit includes: a measuring device adapted to measure the contour of the extracted graphic of the first region to obtain a contour measurement value of the first region; and further adapted to measure the contour of the extracted graphic of the third region to obtain a contour measurement value of the third region; a comparator adapted to compare the relative sizes of the contour measurement value of the first region and the microscopic measurement value of the first region; the comparator further adapted to compare the relative sizes of the contour measurement value of the third region and the microscopic measurement value of the third region; an adjuster adapted to adjust the ADI profile parameter according to a difference between the profile measurement value of the first region and the microscope measurement value of the first region until the profile measurement value of the first region is consistent with the microscope measurement value of the first region, wherein when the profile measurement value of the first region is consistent with the microscope measurement value of the first region, the ADI profile parameter is an optimal ADI profile parameter; and the adjuster is further adapted to adjust the AEI profile parameter according to a difference between the profile measurement value of the third region and the microscope measurement value of the third region until the profile measurement value of the third region is consistent with the microscope measurement value of the third region, wherein when the profile measurement value of the third region is consistent with the microscope measurement value of the third region, the AEI profile parameter is an optimal AEI profile parameter. The recognition unit further extracts the contour of the graphic of the second area in the image of the patterned photoresist layer according to the optimal ADI contour parameter; the recognition unit further extracts the contour of the graphic of the fourth area in the image of the patterned etched layer according to the optimal AEI contour parameter.

18. The measurement and analysis device according to claim 15, wherein: The analysis module includes: a first measuring device adapted to measure a profile of a pattern in the patterned photoresist layer to obtain a photolithography profile measurement value; a second measuring device adapted to measure a profile of a pattern in the patterned etched layer to obtain an etch profile measurement value; An analyzer is adapted to obtain etch measurements based on differences in profiles of features in the patterned photoresist layer and profiles of features in the patterned etched layer.

19. A readable storage medium having a computer program stored thereon, characterized in that: The computer program is executed by a processor to implement the steps of the method according to any one of claims 1 to 14.

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