Forward-mounted, flip-mounted and vertical LED chip, MIP chip structure and manufacturing method thereof

Abstract

The invention provides a normal, flip and vertical LED chip, an MIP chip structure and a manufacturing method thereof. The LED chip comprises a substrate; the first LED chip structure comprises an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer and a transparent conductive layer which are sequentially stacked in the direction away from the substrate; the N-type epitaxial layer comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer and the transparent conductive layer are sequentially stacked on the second step; a first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer; a color conversion layer and a first mirror layer; the color conversion layers are distributed on the side, close to the substrate, of the N-type epitaxial layer, the side wall of the first LED chip structure and the surface of the transparent conductive layer, and the first electrode and the second electrode are exposed. The first mirror layer covers the color conversion layer. According to the technical scheme, the problems that the color conversion efficiency of an LED chip is not high, and blue light leaks are solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor devices, and in particular to a face-mounted, flip-chip and vertical LED chip, a MIP chip structure, and a manufacturing method thereof. Background Art

[0002] At present, red light LED chips are a pain point in the industry, especially as product size decreases. Due to the size effect of the material, the brightness of GaAS or PAlGaInP materials will decrease significantly as the chip size decreases, and they cannot meet the commercialization needs of MicroLED chips. InGaN red light technology is easily decomposed during high-temperature growth, resulting in low overall efficiency and difficult to control yield.

[0003] Therefore, how to improve the reliability and excitation efficiency of LED chip products, and how to solve the light leakage problem of LED chip products are industry pain points that technical personnel in this field need to overcome. Summary of the invention

[0004] The present invention provides a front-mounted, flip-chip and vertical LED chip, a MIP chip structure and a manufacturing method thereof, so as to solve the problems of low color conversion efficiency and blue light leakage of LED chips.

[0005] According to a first aspect of the present invention, there is provided a front-mounted LED chip, comprising:

[0006] substrate;

[0007] A first LED chip structure; the first LED chip structure comprises: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer and a transparent conductive layer stacked in sequence in a direction away from the substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer and the transparent conductive layer are stacked in sequence on the second step; a first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer;

[0008] A color conversion layer and a first reflector layer; the color conversion layer is distributed on a side of the N-type epitaxial layer close to the substrate, the side wall of the first LED chip structure and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode; the first reflector layer covers the color conversion layer; the first reflector layer is used to transmit red light and reflect light of other colors.

[0009] Optionally, the color conversion layer has a thickness of 1 um-4 um.

[0010] Optionally, the color conversion layer is a red color conversion layer.

[0011] Optionally, the first reflector layer is a metal reflector or a DBR reflector.

[0012] Optionally, the material of the first reflector layer is: a combination of titanium oxide and silicon oxide, or a combination of silicon oxide and silicon nitride.

[0013] According to a second aspect of the present invention, there is provided a flip-chip LED chip, comprising:

[0014] Transparent substrate;

[0015] A second LED chip structure, the second LED chip structure comprising: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflector layer, a first electrode and a second electrode stacked in sequence in a direction away from the transparent substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer and the second reflector layer are stacked in sequence on the second step; the first electrode is formed on the first step; the second electrode is formed on the surface of the second reflector layer;

[0016] The third reflector layer and the first color conversion layer; the first color conversion layer is distributed on the side of the N-type epitaxial layer close to the transparent substrate; the third reflector layer is formed between the first color conversion layer and the transparent substrate; wherein, the third reflector layer is used to transmit red light and reflect light of other colors.

[0017] Optionally, the third reflector layer also covers the sidewalls of the second LED chip structure.

[0018] Optionally, the flip-chip LED chip further comprises: a second color conversion layer; the second color conversion layer is formed on the side wall of the first LED chip structure;

[0019] Wherein, the third reflector layer of the side wall of the second LED chip structure covers the surface of the second color conversion layer.

[0020] According to a third aspect of the present invention, there is provided a MIP chip structure, comprising:

[0021] A transparent substrate; the transparent substrate is divided into a red light region, a green light region and a blue light region which are independently distributed;

[0022] A plurality of third reflector layers are formed in the red light region and the green light region respectively; and a first red color conversion layer and a first green color conversion layer are formed on the surfaces of the third reflector layers in the red light region and the green light region respectively;

[0023] The first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure are respectively formed in the first red color conversion layer, the first green color conversion layer and the blue light region; wherein the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure respectively include:

[0024] An N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflector layer, a first electrode and a second electrode are sequentially stacked in a direction away from the transparent substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer and the second reflector layer are sequentially stacked on the second step; the first electrode is formed on the first step; the second electrode is formed on the surface of the second reflector layer;

[0025] The third reflector layer is also formed on the first flip-chip LED chip structure and the second flip-chip LED chip structure;

[0026] The third reflector layer is used for transmitting red light and green light, and reflecting blue light.

[0027] Optionally, the MIP chip structure further includes:

[0028] A second red color conversion layer and a second green color conversion layer; the second red color conversion layer and the second green color conversion layer are formed on the first flip-chip LED chip structure and the second flip-chip LED chip structure respectively;

[0029] The third reflector layer on the first flip-chip LED chip structure and the second flip-chip LED chip structure covers the surface of the second red color conversion layer and the second green color conversion layer.

[0030] Optionally, the MIP chip structure further includes a first metal bridge and a first metal column;

[0031] The transparent substrate further includes a first PAD region; the first metal column is formed in the first PAD region;

[0032] The first metal bridge is formed on a transparent substrate between the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure and extends to the N-type epitaxial layer on the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure, and connects the first metal column to form a common cathode structure.

[0033] According to a fourth aspect of the present invention, there is provided a vertical LED chip, comprising:

[0034] Conductive substrate;

[0035] A second LED chip structure, the second LED chip structure comprising: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflector layer, a first electrode and a second electrode stacked in sequence in a direction away from the conductive substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer and the second reflector layer are stacked in sequence on the second step; the first electrode is formed on the first step; the second electrode is formed on the surface of the second reflector layer;

[0036] The third reflector layer and the first color conversion layer; the first color conversion layer is distributed on a side of the N-type epitaxial layer close to the conductive substrate; the third reflector layer covers the first color conversion layer and the side wall of the second LED chip structure.

[0037] Optionally, the vertical LED chip further includes a first connection metal layer, wherein the first connection metal layer is connected between the first electrode and the conductive substrate.

[0038] According to a fifth aspect of the present invention, there is provided a method for manufacturing a front-mounted LED chip, which is used to manufacture the front-mounted LED chip according to any one of the first aspects of the present invention, comprising:

[0039] Providing the substrate, the first LED chip structure and a temporary substrate; wherein the first LED chip structure is formed on the temporary substrate;

[0040] The first reflector layer and the first color conversion layer covering the N-type epitaxial layer on the side close to the substrate are formed; the first reflector layer and the first color conversion layer covering the N-type epitaxial layer on the side close to the substrate are sequentially stacked on the substrate in a direction away from the substrate;

[0041] Transferring the first LED chip structure to the surface of the first color conversion layer, and peeling off the temporary substrate;

[0042] forming a third color conversion layer; the third color conversion layer is distributed on the side wall of the first LED chip structure and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode; the color conversion layer includes the first color conversion layer and the third color conversion layer;

[0043] The first reflector layer is formed to cover the sidewalls of the first LED chip structure and the surface of the transparent conductive layer.

[0044] Optionally, the first color conversion layer or the third color conversion layer is formed by immersion or spin coating.

[0045] Optionally, the first reflector layer is formed by sputtering or evaporation.

[0046] According to a sixth aspect of the present invention, there is provided a method for manufacturing a flip-chip LED chip, which is used to manufacture the flip-chip LED chip according to any one of the second aspects of the present invention, comprising:

[0047] Providing the transparent substrate, the second LED chip structure and a temporary substrate; wherein the second LED chip structure is formed on the temporary substrate;

[0048] forming the third reflector layer and the first color conversion layer; the third reflector layer and the first color conversion layer are sequentially stacked on the transparent substrate in a direction away from the transparent substrate;

[0049] The first LED chip structure is transferred to the surface of the first color conversion layer, and the temporary substrate is peeled off.

[0050] Optionally, after transferring the first LED chip structure to the surface of the first color conversion layer and peeling off the temporary substrate, the method further includes:

[0051] The third reflector layer is formed to cover the surface of the sidewall of the second LED chip structure.

[0052] Optionally, before forming the third reflector layer covering the surface of the side wall of the second LED chip structure, the method further includes:

[0053] A second color conversion layer is formed; the second color conversion layer is formed on the side wall of the second LED chip structure; wherein the third reflector layer covering the surface of the side wall of the second LED chip structure covers the surface of the second color conversion layer.

[0054] According to a seventh aspect of the present invention, there is provided a method for manufacturing a vertical LED chip, for manufacturing the vertical LED chip according to any one of the fourth aspects of the present invention, comprising:

[0055] Providing the conductive substrate, the second LED chip structure and a temporary substrate; wherein the second LED chip structure is formed on the temporary substrate;

[0056] The first reflector layer and the first color conversion layer covering the first color conversion layer are formed; the third reflector layer and the first color conversion layer are sequentially stacked on the conductive substrate in a direction away from the conductive substrate;

[0057] Transferring the second LED chip structure to the surface of the first color conversion layer, and peeling off the temporary substrate;

[0058] The third reflector layer is formed to cover the sidewall of the second LED chip structure and expose the first electrode and the second electrode.

[0059] Optionally, after forming the third reflector layer, the method further includes:

[0060] The first metal connection layer is formed; the first metal connection layer is connected to the first electrode and the conductive substrate.

[0061] According to the eighth aspect of the present invention, an electronic device is provided, comprising the face-up LED chip described in any one of the first aspect of the present invention, or / and the flip-chip LED chip described in any one of the second aspect of the present invention, or / and the MIP chip structure described in any one of the third aspect of the present invention, or / and the vertical LED chip described in any one of the fourth aspect of the present invention.

[0062] According to the ninth aspect of the present invention, a method for manufacturing an electronic device is provided, comprising the method for manufacturing a face-up LED chip as described in any one of the fifth aspect of the present invention, or / and the method for manufacturing a flip-chip LED chip as described in any one of the sixth aspect of the present invention, or / and the method for manufacturing a vertical LED chip as described in any one of the seventh aspect of the present invention.

[0063] The present invention provides a forward-mounted LED chip. By arranging a color conversion layer distributed on one side of the N-type epitaxial layer close to the substrate, the side wall of the first LED chip structure and the surface of the transparent conductive layer, it is ensured that the light beam generated from the LED chip structure first excites the color conversion layer arranged on the surface before being emitted outside the LED chip. Compared with the prior art, the excitation efficiency of blue light is increased. At the same time, a first reflector layer is covered on the surface of the color conversion layer, so that all blue light is reflected in the chip and does not transmit light to the outside, thereby achieving a better effect of preventing blue light leakage, and making the light emitted from each light-emitting side of the LED chip more uniform. The problem of low color conversion efficiency and blue light leakage of the forward-mounted LED chip in the prior art is solved, thereby increasing the light output brightness of the forward-mounted LED chip.

[0064] Furthermore, the present invention also provides a MIP chip structure, which is formed by combining a first flip-chip LED chip structure, a second flip-chip LED chip structure and a third flip-chip LED chip structure, and the third reflector layer is formed in both the red light area and the green light area, and a first red color conversion layer and a first green color conversion layer are respectively formed on the surface of the third reflector layer; the third reflector layer is also formed on the first flip-chip LED chip structure and the second flip-chip LED chip structure; it can be seen that the technical solution provided by the present invention, by setting the first flip-chip LED chip structure and the second flip-chip LED chip structure to be similar to the flip-chip LED chip provided by the present invention, makes the blue light completely reflected in the chip and does not transmit light to the outside, thereby achieving a better effect of preventing blue light leakage; solves the problems of low color conversion efficiency and blue light leakage of the MIP chip structure in the prior art, thereby increasing the light output brightness of the MIP chip structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0065] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0066] Figure 1 This is a schematic diagram of the structure of a front-mounted LED chip provided by an embodiment of the present invention;

[0067] Figure 2 It is a structural schematic diagram of a flip-chip LED chip provided by a specific embodiment of the present invention;

[0068] Figure 3 is a schematic structural diagram of a flip-chip LED chip provided by another specific embodiment of the present invention;

[0069] Figure 4 is a schematic structural diagram of a vertical LED chip provided by an embodiment of the present invention;

[0070] Figure 5 is a structural diagram of a MIP chip structure provided by an embodiment of the present invention;

[0071] Figure 6 It is a schematic flow chart of a method for manufacturing a front-mounted LED chip provided by an embodiment of the present invention;

[0072] Figure 7 It is a schematic flow chart of a method for manufacturing a flip-chip LED chip provided by one embodiment of the present invention;

[0073] Figure 8is a schematic flow chart of a method for manufacturing a vertical LED chip provided by an embodiment of the present invention;

[0074] Fig. 9 It is a structural schematic diagram of different process stages of manufacturing a face-mounted, flip-chip or vertical LED chip according to a manufacturing method provided by an embodiment of the present invention;

[0075] Fig.10 It is a structural schematic diagram of different process stages of a method for manufacturing a flip-chip LED chip provided by a specific embodiment of the present invention;

[0076] Fig.11 It is a structural schematic diagram of different process stages of a method for manufacturing a flip-chip LED chip provided by another specific embodiment of the present invention;

[0077] Fig.12 It is a schematic diagram of the structure of different process stages of a vertical LED chip according to a method for manufacturing the vertical LED chip provided by an embodiment of the present invention;

[0078] Description of reference numerals:

[0079] 101-substrate;

[0080] 102-N type epitaxial layer;

[0081] 103- quantum well light emitting layer;

[0082] 104-P type epitaxial layer;

[0083] 105-transparent conductive layer;

[0084] 106- a first electrode;

[0085] 107- a second electrode;

[0086] 108-color conversion layer;

[0087] 109-first reflector layer;

[0088] 110 - a third reflector layer;

[0089] 112-first color conversion layer;

[0090] 113 - second reflector layer;

[0091] 114-second color conversion layer;

[0092] 115-first metal connection layer;

[0093] 116-transparent substrate;

[0094] 1- transparent substrate;

[0095] 2- first metal column;

[0096] 3-Red light area;

[0097] 4-Blue light area;

[0098] 5-Green light area;

[0099] 6- First metal bridge. DETAILED DESCRIPTION

[0100] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0101] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0102] At present, red light LED chips are a pain point in the industry. Due to the size effect of the material, as the size of the product material decreases, the brightness of the LED chip product decreases significantly. For example, when blue light is converted to red light, the unwrapped surface of the LED device will cause blue light to leak sideways, making the light color emitted by the device impure. Moreover, InGaN red light technology is easy to decompose during high-temperature growth, resulting in low overall conversion efficiency and difficult to control yield. It cannot meet the commercialization needs of MicroLED chips.

[0103] In view of this, the inventors of the present application discovered through repeated experiments that: by covering the light-emitting surface and side walls of the LED chip structure with a DBR reflector, the DBR reflector can be used to achieve the effect of only allowing the color conversion layer to transmit light outward, so that all blue light is reflected inside the chip and does not transmit light outward, thereby achieving a better effect of preventing blue light leakage. At the same time, a color conversion layer is made on other light-emitting surfaces other than the main light-emitting surface of the LED chip to fully stimulate the light-emitting efficiency of the color conversion layer and improve the brightness of the LED chip.

[0104] It can be seen that the technical solution provided in this application can achieve higher excitation efficiency and solve the problem of product light leakage.

[0105] The technical solution of the present invention is described in detail with specific embodiments below. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0106] Please refer to Figure 1-Figure 12 The quantum well light-emitting layers provided by the present invention are all blue light-emitting layers, and the reflector layers are all used to transmit red light and reflect light of other colors.

[0107] According to an embodiment of the present invention, there is provided a front mounted LED chip, comprising:

[0108] Substrate 101;

[0109] A first LED chip structure; the first LED chip structure comprises: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104 and a transparent conductive layer 105 stacked in sequence in a direction away from the substrate 101; wherein the N-type epitaxial layer 102 comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104 and the transparent conductive layer 105 are stacked in sequence on the second step; a first electrode 106 and a second electrode 107; the first electrode 106 is formed on the first step; the second electrode 107 is formed on the surface of the transparent conductive layer 105;

[0110] The color conversion layer 108 and the first reflector layer 109; the color conversion layer 108 is distributed on the side of the N-type epitaxial layer 102 close to the substrate 101, the side wall of the first LED chip structure and the surface of the transparent conductive layer 105, and exposes the first electrode 106 and the second electrode 107; the first reflector layer 109 covers the color conversion layer 108; the LED chip is mounted as shown in FIG. Figure 1 shown.

[0111] The present invention provides a forward-mounted LED chip, which is provided with: a color conversion layer distributed on one side of the N-type epitaxial layer close to the substrate, the side wall of the first LED chip structure and the surface of the transparent conductive layer, so as to ensure that the light beam generated from the LED chip structure first excites the color conversion layer provided on the surface before being emitted outside the LED chip, thereby increasing the excitation efficiency of blue light compared with the prior art; at the same time, a first reflector layer is covered on the surface of the color conversion layer, so that all blue light is reflected inside the chip and does not transmit light to the outside, thereby achieving a better effect of preventing blue light leakage, and making the light emitted from each light-emitting side of the LED chip more uniform; it can be seen that the technical solution provided by the present invention solves the problems of low color conversion efficiency and blue light leakage of the forward-mounted LED chip in the prior art by providing the color conversion layer and the first reflector layer in the first LED chip structure, thereby increasing the light output brightness of the forward-mounted LED chip.

[0112] In one embodiment, the color conversion layer 108 has a thickness of 1 um-4 um.

[0113] In one embodiment, the color conversion layer 108 is a red color conversion layer 108 , a yellow color conversion layer 108 , or a green color conversion layer 108 .

[0114] At present, red light LED chips are a pain point in the industry. Due to the size effect of the material, as the size of the product material decreases, the brightness of the LED chip product decreases significantly. Moreover, InGaN red light technology is easily decomposed during high-temperature growth, resulting in low overall conversion efficiency and difficult to control yield. It cannot meet the commercialization needs of MicroLED chips.

[0115] In one embodiment of the present invention, it is particularly proposed that the color conversion layer 108 is a red color conversion layer 108 .

[0116] Among them, in the technical solution provided in this embodiment, since the red conversion layer 108 is distributed on the side of the N-type epitaxial layer 102 close to the substrate 101, the side wall of the first LED chip structure and the surface of the transparent conductive layer 105; the upright LED chip can achieve 360° full wrapping of the first LED chip structure by the red color conversion layer 108, which solves the problem of red light leakage of LED chip products and achieves higher red light excitation efficiency.

[0117] In other implementations, the color conversion layer 108 may also be a yellow color conversion layer 108 or a red color conversion layer 108. The light leakage problem of yellow light or green light of LED chip products is solved respectively, and higher excitation efficiency of yellow light or green light is achieved.

[0118] In one embodiment, the first reflector layer 109 is a metal reflector or a DBR reflector.

[0119] In one embodiment, the material of the first reflector layer 109 is a combination of titanium oxide and silicon oxide, or a combination of silicon oxide and silicon nitride.

[0120] According to an embodiment of the present invention, there is also provided a flip-chip LED chip, comprising:

[0121] A transparent substrate 116;

[0122] A second LED chip structure, the second LED chip structure comprises: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104, a transparent conductive layer 105, a second reflector layer 113, a first electrode 106 and a second electrode 107 stacked in sequence in a direction away from the transparent substrate 116; wherein the N-type epitaxial layer 102 comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104, the transparent conductive layer 105 and the second reflector layer 113 are stacked in sequence on the second step; the first electrode 106 is formed on the first step; the second electrode 107 is formed on the surface of the second reflector layer 113;

[0123] The third reflector layer 110 and the first color conversion layer 112; the first color conversion layer 112 is distributed on the side of the N-type epitaxial layer 102 close to the transparent substrate 116; the third reflector layer 110 is formed between the first color conversion layer 112 and the transparent substrate 116; wherein, the third reflector layer 110 is used to transmit red light and reflect light of other colors.

[0124] A flip-chip LED chip provided by the present invention is provided with a first color conversion layer distributed on a side of the N-type epitaxial layer close to the transparent substrate; at the same time, the first color conversion layer is covered with a third reflector layer, so that blue light is reflected inside the chip and does not transmit light to the outside, thereby being able to achieve a better effect of preventing blue light leakage, and achieving a technical effect of more uniform light emitted from each light-emitting side of the LED chip; it can be seen that the technical solution provided by the present invention solves the problems of low color conversion efficiency and blue light leakage of the flip-chip LED chip existing in the prior art by arranging the first color conversion layer and the third reflector layer in the second LED chip structure, thereby increasing the light output brightness of the flip-chip LED chip.

[0125] In one embodiment, the third reflector layer 110 is formed only between the first color conversion layer 112 and the transparent substrate 116 (not shown in the figure).

[0126] In another embodiment, the third reflector layer also covers the sidewalls of the second LED chip structure. Figure 2 shown.

[0127] In the technical solution provided in this embodiment, the third reflector layer also covers the side walls and the bottom of the second LED chip structure, so that the blue light is reflected inside the chip and does not transmit light to the outside, thereby achieving a better effect of preventing blue light leakage.

[0128] In one embodiment, the flip-chip LED chip further includes: a second color conversion layer; the second color conversion layer is formed on the side wall of the first LED chip structure; wherein the third reflector layer of the side wall of the second LED chip structure covers the surface of the second color conversion layer.

[0129] In one embodiment, when the third reflector layer also covers the side wall of the second LED chip structure, the second color conversion layer is formed on the side wall of the first LED chip structure, and the third reflector layer of the side wall covers the surface of the second color conversion layer.

[0130] A flip-chip LED chip provided in this specific embodiment, on the one hand, by providing a first color conversion layer distributed on a side of the N-type epitaxial layer close to the substrate, a second color conversion layer formed on the side wall of the first LED chip structure is provided; it is ensured that the light beam generated from the flip-chip LED chip structure first excites the second color conversion layer provided on the surface before being emitted to the outside of the flip-chip LED chip, thereby increasing the excitation efficiency of blue light compared to the prior art; on the other hand, a reflector layer is covered on the surface of the second color conversion layer and the first color conversion layer, so that all blue light is reflected inside the chip and does not transmit light to the outside, thereby achieving a better effect of preventing blue light leakage and achieving a technical effect of more uniform light emitted from each light-emitting side of the LED chip; it can be seen that the technical solution provided by the present invention solves the problems of low color conversion efficiency and blue light leakage of the flip-chip LED chip existing in the prior art by providing the first color conversion layer, the second color conversion layer and the third reflector layer in the second LED chip structure, thereby increasing the light output brightness of the flip-chip LED chip.

[0131] In another embodiment, when the third reflector layer is only formed between the first color conversion layer 112 and the transparent substrate 116, the second color conversion layer is formed on the side wall of the first LED chip structure; a black protective layer is also formed on the surface of the second color conversion layer to prevent blue light leakage (not shown in the figure).

[0132] According to an embodiment of the present invention, a MIP chip structure is further provided, including:

[0133] A transparent substrate 1; the transparent substrate 1 is divided into a red light region 3, a green light region 5 and a blue light region 4 which are independently distributed;

[0134] A plurality of third reflector layers 110 are respectively formed in the red light region 3 and the green light region 5; and a first red color conversion layer and a first green color conversion layer are respectively formed on the surfaces of the third reflector layers 110 in the red light region 3 and the green light region 5; the third reflector layer 110 is used to transmit red light and green light and reflect blue light; a first flip-chip LED chip structure, a second flip-chip LED chip structure and a third flip-chip LED chip structure are respectively formed in the first red color conversion layer, the first green color conversion layer and the blue light region 4; wherein the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure respectively include:

[0135] An N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104, a transparent conductive layer 105, a second reflector layer 113, a first electrode 106 and a second electrode 107 are sequentially stacked in a direction away from the transparent substrate; wherein the N-type epitaxial layer 102 comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104, the transparent conductive layer 105 and the second reflector layer 113 are sequentially stacked on the second step; the first electrode 106 is formed on the first step; the second electrode 107 is formed on the surface of the second reflector layer 113;

[0136] The third reflector layer 110 is also formed on the first flip-chip LED chip structure and the second flip-chip LED chip structure. Figure 5 shown.

[0137] The present invention provides a MIP chip structure, which is formed by combining a first flip-chip LED chip structure, a second flip-chip LED chip structure and a third flip-chip LED chip structure, wherein in the first flip-chip LED chip structure and the second flip-chip LED chip structure, the third reflector layer is formed in the red light region and the green light region respectively; the third reflector layer is formed in both the red light region and the green light region, and the first red color conversion layer and the first green color conversion layer are formed on the surface of the third reflector layer respectively; the third reflector layer is also formed on the side walls of the first flip-chip LED chip structure and the second flip-chip LED chip structure; thereby, by combining the first flip-chip LED chip structure and the second flip-chip LED chip structure, the third reflector layer is formed in the red light region and the green light region respectively; the third reflector layer is formed in the red light region and the green light region respectively; the third reflector layer is formed in the green light region and the red light region respectively; the third reflector layer is formed in the green light region and the green light region respectively; the third reflector layer is formed in the green light region and the green light region respectively; the third reflector layer is formed in the green light region and the red light region respectively; the third reflector layer is formed in the green ... The structure and the second flip-chip LED chip structure are arranged to be similar to the flip-chip LED chip provided in the aforementioned embodiment, so that all blue light is reflected inside the chip and does not transmit light outward, thereby being able to achieve a better effect of preventing blue light leakage. It can be seen that the technical solution provided by the present invention, by arranging a flip-chip LED chip similar to that provided in the aforementioned embodiment in the MIP chip structure: a first flip-chip LED chip structure and a second flip-chip LED chip, wherein the first flip-chip LED chip structure and the second flip-chip LED chip are used to emit red light and green light, respectively, which solves the problems of low color conversion efficiency and blue light leakage of the MIP chip structure in the prior art, thereby increasing the light output brightness of the MIP chip structure.

[0138] In one embodiment, the MIP chip structure further includes:

[0139] A second red color conversion layer and a second green color conversion layer; the second red color conversion layer and the second green color conversion layer are formed on the first flip-chip LED chip structure and the second flip-chip LED chip structure respectively;

[0140] The third reflector layer on the first flip-chip LED chip structure and the second flip-chip LED chip structure covers the surface of the second red color conversion layer and the second green color conversion layer.

[0141] The present invention provides a MIP chip structure. On the one hand, by providing a second red color conversion layer and a second green color conversion layer respectively formed on the side walls of the first flip-chip LED chip structure and the second flip-chip LED chip structure, it is ensured that the light beam generated from the first flip-chip LED chip structure or the second flip-chip LED chip structure first excites the second color conversion layer provided on the surface before being emitted outside the flip-chip LED chip. Compared with the prior art, the excitation efficiency of blue light is increased.

[0142] On the other hand, the surfaces of the first red color conversion layer and the first green color conversion layer, as well as the surfaces of the second red color conversion layer and the second green color conversion layer are covered with a third reflector layer, so that all blue light is reflected inside the chip and does not transmit light to the outside, thereby being able to achieve a better effect of preventing blue light leakage, and making the light emitted from each light-emitting side of the flip-chip LED chip structure more uniform; it can be seen that the technical solution provided by the present invention solves the problems of low color conversion efficiency and blue light leakage of the MIP chip structure existing in the prior art by arranging a second red color conversion layer, a second green color conversion layer, a second red color conversion layer, a second green color conversion layer, and a third reflector layer in the flip-chip LED chip structure, thereby increasing the light output brightness of the MIP chip structure.

[0143] In one embodiment, the MIP chip structure further includes a first metal bridge 6 and a first metal pillar 2;

[0144] The transparent substrate 1 further includes a first PAD region; the first metal column 2 is formed in the first PAD region;

[0145] The first metal bridge 6 is formed on the transparent substrate 1 between the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure and extends to the N-type epitaxial layer 102 on the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure, and connects the first metal column 2 to form a common cathode structure.

[0146] In one embodiment, the first metal bridge 6 may be formed between devices in regions 2 and 3, between devices in regions 2 and 5, and between devices in regions 4 and 5. Figure 5 As shown;

[0147] In another embodiment, the first metal bridge 6 may be formed between devices in regions 2 and 3 , between devices in regions 2 and 5 , between devices in regions 4 and 5 , and between devices in regions 3 and 4 .

[0148] Secondly, according to an embodiment of the present invention, a vertical LED chip is also provided, comprising:

[0149] Conductive substrate 101;

[0150] A second LED chip structure, the second LED chip structure comprises: an N-type epitaxial layer 102, a quantum well light-emitting layer 103, a P-type epitaxial layer 104, a transparent conductive layer 105, a second reflector layer 113, a first electrode 106 and a second electrode 107 stacked in sequence in a direction away from the conductive substrate 101; wherein the N-type epitaxial layer 102 comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer 103, the P-type epitaxial layer 104, the transparent conductive layer 105 and the second reflector layer 113 are stacked in sequence on the second step; the first electrode 106 is formed on the first step; the second electrode 107 is formed on the surface of the second reflector layer 113;

[0151] The third reflector layer 110 and the first color conversion layer 112; the first color conversion layer 112 is distributed on the side of the N-type epitaxial layer 102 close to the conductive substrate 101; the third reflector layer 110 covers the first color conversion layer 112 and the side wall of the second LED chip structure, such as Figure 4 shown.

[0152] A vertical LED chip provided by the present invention, by arranging a first color conversion layer distributed on a side of the N-type epitaxial layer close to the conductive substrate, and covering the first color conversion layer and the side walls of the second LED chip structure with a third reflector layer, so that all blue light is reflected inside the chip and does not transmit light to the outside, thereby being able to achieve a better effect of preventing blue light leakage and achieving a technical effect of more uniform light emitted from each light-emitting side of the LED chip; it can be seen that the technical solution provided by the present invention, by arranging the first color conversion layer and the third reflector layer in the second LED chip structure, solves the problems of low color conversion efficiency and blue light leakage of the vertical LED chip in the prior art, thereby increasing the light output brightness of the vertical LED chip.

[0153] In one embodiment, the vertical LED chip further includes a first connection metal layer, wherein the first metal connection layer is connected between the first electrode and the conductive substrate.

[0154] In addition, according to an embodiment of the present invention, a method for manufacturing a front-mounted LED chip is provided, which is used to manufacture the front-mounted LED chip according to any one of the above embodiments of the present invention. The flow chart of the method for manufacturing the front-mounted LED chip is as follows: Figure 6 As shown, the production method includes:

[0155] S11: providing the substrate 101, the first LED chip structure and a temporary substrate; wherein the first LED chip structure is formed on the temporary substrate; Fig. 9 As shown;

[0156] S12: forming the first reflector layer 109 covering the N-type epitaxial layer 102 on the side close to the substrate 101, and the first color conversion layer 108112; the first reflector layer 109 covering the N-type epitaxial layer 102 on the side close to the substrate 101 and the first color conversion layer 108112 are sequentially stacked on the substrate 101 in a direction away from the substrate 101;

[0157] S13: transferring the first LED chip structure to the surface of the first color conversion layer 108112, and peeling off the temporary substrate;

[0158] S14: forming a third color conversion layer 108; the third color conversion layer 108 is distributed on the side wall of the first LED chip structure and the surface of the transparent conductive layer 105, and exposes the first electrode 106 and the second electrode 107; the color conversion layer 108 includes the first color conversion layer 108112 and the third color conversion layer 108;

[0159] S15: forming the first reflector layer 109 covering the sidewalls of the first LED chip structure and the surface of the transparent conductive layer 105; Figure 1 shown.

[0160] The manufacturing method of the upright LED chip provided by the present invention solves the problems of low color conversion efficiency and blue light leakage of the upright LED chip in the prior art by forming a color conversion layer and a first reflector layer in the first LED chip structure, thereby increasing the light output brightness of the upright LED chip.

[0161] In one embodiment, the first color conversion layer 108112 or the third color conversion layer 108 is formed by immersion or spin coating.

[0162] In one embodiment, the first reflector layer 109 is formed by sputtering or evaporation.

[0163] According to an embodiment of the present invention, a method for manufacturing a flip-chip LED chip is further provided, which is used to manufacture the flip-chip LED chip described in any one of the aforementioned embodiments of the present invention. The method for manufacturing the flip-chip LED chip is as follows: Figure 7 As shown, the production method includes:

[0164] S21: providing the transparent substrate 116, the second LED chip structure and a temporary substrate; wherein the second LED chip structure is formed on the temporary substrate;

[0165] S22: forming the third reflector layer 110 and the first color conversion layer 112; the third reflector layer 110 and the first color conversion layer 112 are sequentially stacked on the transparent substrate 116 in a direction away from the transparent substrate 116;

[0166] S23: Transferring the first LED chip structure to the surface of the first color conversion layer 112, and peeling off the temporary substrate (not shown in the figure).

[0167] The method for manufacturing a flip-chip LED chip provided by the present invention solves the problems of low color conversion efficiency and blue light leakage of the flip-chip LED chip in the prior art by forming a first color conversion layer and a third reflector layer in the second LED chip structure, thereby increasing the light output brightness of the flip-chip LED chip.

[0168] After transferring the first LED chip structure to the surface of the first color conversion layer and peeling off the temporary substrate, the method further includes:

[0169] S24: forming the third reflector layer 110 covering the surface of the side wall of the second LED chip structure; Fig.10 shown.

[0170] After forming the third reflector layer 110 covering the surface of the side wall of the second LED chip structure, the method further includes: partitioning the transparent substrate 116 to form a plurality of flip-chip LED chips; the device structure after the partition is as follows: Figure 2 As shown;

[0171] In one embodiment, before forming the third reflector layer 110 covering the surface of the side wall of the second LED chip structure, the method further includes:

[0172] A second color conversion layer 114 is formed; the second color conversion layer 114 is formed on the side wall of the second LED chip structure; wherein the third reflector layer 110 covering the surface of the side wall of the second LED chip structure covers the surface of the second color conversion layer 114; Fig.11 shown.

[0173] The technical solution provided in this specific embodiment solves the problems of low color conversion efficiency and blue light leakage of flip-chip LED chips in the prior art by forming a first color conversion layer, a second color conversion layer and a third reflector layer in the second LED chip structure, thereby increasing the light output brightness of the flip-chip LED chip.

[0174] In another embodiment, in step S23, after the first LED chip structure is transferred to the surface of the first color conversion layer and the temporary substrate is peeled off, the third reflector layer covering the first LED chip structure is not formed, so that after the second color conversion layer 114 is formed on the side wall of the second LED chip structure, a black protective layer is covered on the surface of the second color conversion layer 114 to prevent blue light leakage. According to one embodiment of the present invention, a method for manufacturing a vertical LED chip is also provided, which is used to manufacture the vertical LED chip described in any of the aforementioned embodiments of the present invention, and the method for manufacturing a vertical LED chip is as follows Figure 8 As shown, the production method includes:

[0175] S31: providing the conductive substrate 101, the second LED chip structure and a temporary substrate; wherein the second LED chip structure is formed on the temporary substrate;

[0176] S32: forming the first reflector layer 109 and the first color conversion layer 112 covering the first color conversion layer 112; the third reflector layer 110 and the first color conversion layer 112 are sequentially stacked on the conductive substrate 101 in a direction away from the conductive substrate 101;

[0177] S33: transferring the second LED chip structure to the surface of the first color conversion layer 112, and peeling off the temporary substrate;

[0178] S34: forming the third reflector layer 110 covering the side wall of the second LED chip structure and exposing the first electrode 106 and the second electrode 107; Fig.12 shown.

[0179] The present invention provides a method for manufacturing a vertical LED chip, which solves the problems of low color conversion efficiency and blue light leakage of the vertical LED chip in the prior art by forming a first color conversion layer and a third reflector layer in the second LED chip structure, thereby increasing the light output brightness of the vertical LED chip.

[0180] After forming the third reflector layer 110 covering the side wall of the second LED chip structure, the method further includes: partitioning the conductive substrate 101 to form a plurality of flip-chip LED chips; the device structure after the partition is as follows: Figure 4 As shown;

[0181] In one embodiment, after forming the third reflector layer 110, the method further includes:

[0182] The first metal connection layer 115 is formed; the first metal connection layer 115 is connected to the first electrode 106 and the conductive substrate 101 .

[0183] According to an embodiment of the present invention, a method for manufacturing a MIP chip structure is also provided, comprising:

[0184] S41: providing a transparent substrate 1; the transparent substrate 1 is divided into a red light region 3, a green light region 5 and a blue light region 4 which are independently distributed;

[0185] S42: forming a plurality of third reflector layers 110, respectively formed in the red light region 3 and the green light region 5; and forming a first red color conversion layer and a first green color conversion layer on the surfaces of the third reflector layer 110 in the red light region 3 and the green light region 5, respectively;

[0186] S43: providing a temporary substrate, a first flip-chip LED chip structure, a second flip-chip LED chip structure and a third flip-chip LED chip structure; the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure are formed in different areas on the temporary substrate and are adapted to the positions of the red light area 3, the green light area 5 and the blue light area 4; the side walls of the first flip-chip LED chip structure and the second flip-chip LED chip structure are both covered with a third reflector layer;

[0187] S44: transferring the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure to the first red color conversion layer, the first green color conversion layer and the blue light region 4 respectively to form a MIP chip structure.

[0188] The second red color conversion layer and the second green color conversion layer are also formed on the side walls of the first flip-chip LED chip structure and the second flip-chip LED chip structure; the side walls of the first flip-chip LED chip structure and the second flip-chip LED chip structure are both covered with a third reflector layer covering the second red color conversion layer and the second green color conversion layer respectively;

[0189] Step S44, after transferring the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure to the first red color conversion layer, the first green color conversion layer and the blue light region 4 respectively, further includes:

[0190] A first metal bridge 6 and a first metal column 2 are formed.

[0191] It can be seen that the method for manufacturing the MIP chip structure provided by the present invention solves the problems of low color conversion efficiency and blue light leakage of the MIP chip structure in the prior art by arranging flip-chip LED chips similar to those provided in the aforementioned embodiments in the MIP chip structure: a first flip-chip LED chip structure and a second flip-chip LED chip, wherein the first flip-chip LED chip structure and the second flip-chip LED chip are used to emit red light and green light, respectively, thereby increasing the light output brightness of the MIP chip structure.

[0192] According to one embodiment of the present invention, there is also provided an electronic device, comprising the upright LED chip described in any one of the aforementioned embodiments of the present invention, or / and the flip-chip LED chip described in any one of the aforementioned embodiments of the present invention, or / and the MIP chip structure described in any one of the aforementioned embodiments of the present invention, or / and the vertical LED chip described in any one of the aforementioned embodiments of the present invention.

[0193] According to one embodiment of the present invention, a method for manufacturing an electronic device is also provided, including the method for manufacturing the upright LED chip as described in any one of the aforementioned embodiments of the present invention, or / and the method for manufacturing the flip-chip LED chip as described in any one of the aforementioned embodiments of the present invention, or / and the method for manufacturing the vertical LED chip as described in any one of the aforementioned embodiments of the present invention.

[0194] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A normal LED chip, It is characterized in that include: substrate; A first LED chip structure; The first LED chip structure comprises: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer and a transparent conductive layer stacked in sequence in a direction away from the substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer and the transparent conductive layer are stacked in sequence on the second step; a first electrode and a second electrode; the first electrode is formed on the first step; the second electrode is formed on the surface of the transparent conductive layer; A color conversion layer and a first reflector layer; the color conversion layer is distributed on a side of the N-type epitaxial layer close to the substrate, the side wall of the first LED chip structure and the surface of the transparent conductive layer, and the first electrode and the second electrode are exposed; the first reflector layer covers the color conversion layer, and the first reflector layer is used to transmit red light and reflect light of other colors.

2. The front-mounted LED chip according to claim 1, It is characterized in that The thickness of the color conversion layer is 1um-4um.

3. The front-mounted LED chip according to claim 2, It is characterized in that The color conversion layer is a red color conversion layer.

4. The front-mounted LED chip according to claim 3, It is characterized in that The first reflector layer is a metal reflector or a DBR reflector.

5. The front-mounted LED chip according to claim 4, It is characterized in that The material of the first reflector layer is a combination of titanium oxide and silicon oxide, or a combination of silicon oxide and silicon nitride.

6. A flip-chip LED chip, It is characterized in that include: Transparent substrate; A second LED chip structure, the second LED chip structure comprising: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflector layer, a first electrode and a second electrode stacked in sequence in a direction away from the transparent substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer and the second reflector layer are stacked in sequence on the second step; the first electrode is formed on the first step; the second electrode is formed on the surface of the second reflector layer; The third reflector layer and the first color conversion layer; the first color conversion layer is distributed on the side of the N-type epitaxial layer close to the transparent substrate; the third reflector layer is formed between the first color conversion layer and the transparent substrate; wherein; the third reflector layer is used to transmit red light and reflect light of other colors.

7. The flip-chip LED chip according to claim 6, It is characterized in that The third reflector layer also covers the sidewalls of the second LED chip structure.

8. The flip-chip LED chip according to any one of claims 6 or 7, It is characterized in that The flip-chip LED chip further comprises: a second color conversion layer; the second color conversion layer is formed on the side wall of the first LED chip structure; Wherein, the third reflector layer of the side wall of the second LED chip structure covers the surface of the second color conversion layer.

9. A MIP chip structure, It is characterized in that include: A transparent substrate; the transparent substrate is divided into a red light region, a green light region and a blue light region which are independently distributed; A plurality of third reflector layers are formed in the red light region and the green light region respectively; and a first red color conversion layer and a first green color conversion layer are formed on the surfaces of the third reflector layers in the red light region and the green light region respectively; the third reflector layers are used to transmit red light and green light and reflect blue light; A first flip-chip LED chip structure, a second flip-chip LED chip structure, and a third flip-chip LED chip structure are formed in the first red color conversion layer, the first green color conversion layer, and the blue light region, respectively; The first flip-chip LED chip structure, the second flip-chip LED chip structure, and the third flip-chip LED chip structure each include: An N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflector layer, a first electrode and a second electrode are sequentially stacked in a direction away from the transparent substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer and the second reflector layer are sequentially stacked on the second step; the first electrode is formed on the first step; the second electrode is formed on the surface of the second reflector layer; The third reflector layer is also formed on the side walls of the first flip-chip LED chip structure and the second flip-chip LED chip structure.

10. The flip-chip LED chip according to claim 9, It is characterized in that The MIP chip structure also includes: A second red color conversion layer and a second green color conversion layer; the second red color conversion layer and the second green color conversion layer are formed on the first flip-chip LED chip structure and the second flip-chip LED chip structure respectively; The third reflector layer on the first flip-chip LED chip structure and the second flip-chip LED chip structure covers the surface of the second red color conversion layer and the second green color conversion layer.

11. The MIP chip structure according to claim 10, It is characterized in that The MIP chip structure also includes a first metal bridge and a first metal column; The transparent substrate further includes a first PAD region; the first metal column is formed in the first PAD region; The first metal bridge is formed on a transparent substrate between the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure and extends to the N-type epitaxial layer on the first flip-chip LED chip structure, the second flip-chip LED chip structure and the third flip-chip LED chip structure, and connects the first metal column to form a common cathode structure.

12. A vertical LED chip, It is characterized in that include: Conductive substrate; A second LED chip structure, the second LED chip structure comprising: an N-type epitaxial layer, a quantum well light-emitting layer, a P-type epitaxial layer, a transparent conductive layer, a second reflector layer, a first electrode and a second electrode stacked in sequence in a direction away from the conductive substrate; wherein the N-type epitaxial layer comprises a step structure; the step structure comprises a first step and a second step; the quantum well light-emitting layer, the P-type epitaxial layer, the transparent conductive layer and the second reflector layer are stacked in sequence on the second step; the first electrode is formed on the first step; the second electrode is formed on the surface of the second reflector layer; The third reflector layer and the first color conversion layer; the first color conversion layer is distributed on the side of the N-type epitaxial layer close to the conductive substrate; the third reflector layer covers the first color conversion layer and the side wall of the second LED chip structure; the third reflector layer is used to transmit red light and reflect light of other colors.

13. The vertical LED chip according to claim 12, It is characterized in that The vertical LED chip further includes a first connection metal layer connected between the first electrode and the conductive substrate.

14. A method for manufacturing a front-mounted LED chip, used for manufacturing the front-mounted LED chip according to any one of claims 1 to 5, It is characterized in that include: Providing the substrate, the first LED chip structure and a temporary substrate; wherein the first LED chip structure is formed on the temporary substrate; The first reflector layer and the first color conversion layer covering the N-type epitaxial layer on the side close to the substrate are formed; the first reflector layer and the first color conversion layer covering the N-type epitaxial layer on the side close to the substrate are sequentially stacked on the substrate in a direction away from the substrate; Transferring the first LED chip structure to the surface of the first color conversion layer, and peeling off the temporary substrate; forming a third color conversion layer; the third color conversion layer is distributed on the side wall of the first LED chip structure and the surface of the transparent conductive layer, and exposes the first electrode and the second electrode; the color conversion layer includes the first color conversion layer and the third color conversion layer; The first reflector layer is formed to cover the sidewalls of the first LED chip structure and the surface of the transparent conductive layer.

15. The method for manufacturing a front mounted LED chip according to claim 14, It is characterized in that The first color conversion layer or the third color conversion layer is formed by immersion or spin coating.

16. The method for manufacturing a front-mounted LED chip according to claim 15, It is characterized in that The first reflector layer is formed by sputtering or evaporation.

17. A method for manufacturing a flip-chip LED chip, used for manufacturing the flip-chip LED chip according to any one of claims 6 to 8, It is characterized in that include: Providing the transparent substrate, the second LED chip structure and a temporary substrate; wherein the second LED chip structure is formed on the temporary substrate; forming the third reflector layer and the first color conversion layer; the third reflector layer and the first color conversion layer are sequentially stacked on the transparent substrate in a direction away from the transparent substrate; The first LED chip structure is transferred to the surface of the first color conversion layer, and the temporary substrate is peeled off.

18. The flip-chip LED chip according to claim 17, It is characterized in that After transferring the first LED chip structure to the surface of the first color conversion layer and peeling off the temporary substrate, the method further includes: The third reflector layer is formed to cover the surface of the sidewall of the second LED chip structure.

19. The flip-chip LED chip according to claim 18, It is characterized in that Before forming the third reflector layer covering the surface of the side wall of the second LED chip structure, the method further includes: A second color conversion layer is formed; the second color conversion layer is formed on the side wall of the second LED chip structure; wherein the third reflector layer covering the surface of the side wall of the second LED chip structure covers the surface of the second color conversion layer.

20. A method for manufacturing a vertical LED chip, used for manufacturing the vertical LED chip according to any one of claims 12 to 13, It is characterized in that include: Providing the conductive substrate, the second LED chip structure and a temporary substrate; wherein the second LED chip structure is formed on the temporary substrate; The first reflector layer and the first color conversion layer covering the first color conversion layer are formed; the third reflector layer and the first color conversion layer are sequentially stacked on the conductive substrate in a direction away from the conductive substrate; Transferring the second LED chip structure to the surface of the first color conversion layer, and peeling off the temporary substrate; The third reflector layer is formed to cover the sidewall of the second LED chip structure and expose the first electrode and the second electrode.

21. The method for manufacturing a vertical LED chip according to claim 20, It is characterized in that After forming the third reflector layer, the method further comprises: The first metal connection layer is formed; the first metal connection layer is connected to the first electrode and the conductive substrate.

22. An electronic device, It is characterized in that It comprises the upright LED chip described in any one of claims 1-5, or / and the flip-chip LED chip described in any one of claims 6-8, or / and the MIP chip structure described in any one of claims 9-11, or / and the vertical LED chip described in any one of claims 12-13.

23. A method for manufacturing an electronic device, It is characterized in that It includes the method for manufacturing the upright LED chip as described in any one of claims 14-16, or / and the method for manufacturing the flip-chip LED chip as described in any one of claims 17-19, or / and the method for manufacturing the vertical LED chip as described in any one of claims 20-21.

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