Light-emitting device, light-emitting substrate, backlight module and display device

Abstract

The invention discloses a light-emitting device, a light-emitting substrate, a backlight module and a display device. The light emitting device includes: a substrate (BS); a plurality of light emitting units (100) on the substrate (BS) and connected in series; a first electrode (E1) connected to one end of the plurality of light emitting units (100) connected in series; a second electrode (E2) connected to the other end of the plurality of light emitting units (100) connected in series; and a bridge electrode (BD) connecting two light emitting units (100) of the plurality of light emitting units (100), the orthographic projection of at least one of the first electrode (E1) and the second electrode (E2) on the substrate (BS) overlapping the orthographic projection of at least two light emitting units (100) of the plurality of light emitting units (100) on the substrate (BS). According to the light-emitting device, at least one of the first electrode E1 and the second electrode E2 can have a large area, and solid crystal rotation is avoided or reduced.

Description

Light-emitting device, light-emitting substrate, backlight module and display device Technical Field

[0001] Embodiments of the present disclosure relate to a light-emitting device, a light-emitting substrate, a backlight module, and a display apparatus. Background Art

[0002] Compared with traditional liquid crystal display (LCD) products, light emitting diode (LED) devices with a size between 100 and 300 μm are called sub-millimeter light emitting diodes (Mini LEDs), and micro light emitting diodes (Micro LEDs) have a size of less than 100 μm.

[0003] Micro LED or Mini LED backlight can achieve fine-grained brightness adjustment, effectively meet the needs of a high number of partitions, and can well implement the function of High Dynamic Range (HDR). It has the characteristics of high-precision partitioning, high dynamic contrast, high color gamut and high brightness, and can achieve a more realistic display effect. The product series covers a full range of products including commercial displays, TVs (television, TV), monitors (monitor, MNT), laptops (notebook, NB), car displays, virtual reality (VR) displays, etc.

[0004] Summary of the Invention

[0005] Embodiments of the present disclosure provide a light-emitting device, a light-emitting substrate, a backlight module, and a display device.

[0006] An embodiment of the present disclosure provides a light-emitting device, comprising: a substrate; a plurality of light-emitting units located on the substrate and connected in series; a first electrode connected to one end of the plurality of light-emitting units connected in series; a second electrode connected to the other end of the plurality of light-emitting units connected in series; and a bridging electrode connecting two of the plurality of light-emitting units; an orthographic projection of at least one of the first electrode and the second electrode on the substrate overlaps with an orthographic projection of at least two of the plurality of light-emitting units on the substrate.

[0007] In the light-emitting device provided in the embodiment of the present disclosure, the first electrode and the second electrode are spaced apart from each other, the first electrode and the second electrode are arranged along a first direction, each of the first electrode and the second electrode extends along a second direction, and the first direction intersects the second direction.

[0008] In the light-emitting device provided by the embodiment of the present disclosure, the ratio of the maximum dimension of the substrate along the first direction to the maximum dimension of the substrate along the second direction is (1-1.18):1.

[0009] In the light-emitting device provided by the embodiment of the present disclosure, the ratio of the maximum size of the plurality of light-emitting units along the first direction to the maximum size of the plurality of light-emitting units along the second direction is (1-1.18):1.

[0010] In the light emitting device provided by the embodiment of the present disclosure, a ratio of a maximum dimension of each of the first electrode and the second electrode along the first direction to a maximum dimension of the plurality of light emitting units along the first direction is greater than 19%.

[0011] In the light emitting device provided by the embodiment of the present disclosure, a ratio of a maximum dimension of each of the first electrode and the second electrode along the first direction to a maximum dimension of the plurality of light emitting units along the first direction is less than or equal to 26%.

[0012] In the light-emitting device provided in the embodiment of the present disclosure, there is a gap between the first electrode and the second electrode, and the ratio of the minimum dimension of the gap along the first direction to the maximum dimension of the multiple light-emitting units along the first direction is greater than or equal to 30% and less than or equal to 35%.

[0013] In the light emitting device provided in the embodiment of the present disclosure, the plurality of light emitting units include a first light emitting unit, a second light emitting unit, a third light emitting unit, and a fourth light emitting unit, and the bridging electrode includes a first bridging electrode, a second bridging electrode, and a third bridging electrode.

[0014] In the light-emitting device provided in the embodiment of the present disclosure, the first light-emitting unit and the second light-emitting unit are connected through the first bridging electrode, the second light-emitting unit and the third light-emitting unit are connected through the second bridging electrode, and the third light-emitting unit and the fourth light-emitting unit are connected through the third bridging electrode.

[0015] In the light-emitting device provided in the embodiments of the present disclosure, the first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit are respectively located in four areas divided by two center lines of the substrate, the first light-emitting unit and the second light-emitting unit are arranged along the second direction, the third light-emitting unit and the fourth light-emitting unit are arranged along the second direction, the first light-emitting unit and the fourth light-emitting unit are arranged along the first direction, and the second light-emitting unit and the third light-emitting unit are arranged along the first direction.

[0016] In the light-emitting device provided in the embodiment of the present disclosure, at least a portion of the first bridging electrode and at least a portion of the third bridging electrode are located between the first electrode and the second electrode, and the second bridging electrode extends along the first direction and is located on the side where the short sides of the first electrode and the second electrode are located.

[0017] In the light-emitting device provided in the embodiment of the present disclosure, each of the first bridging electrode and the third bridging electrode extends along the second direction, and the orthographic projection of each of the first bridging electrode and the third bridging electrode on the substrate does not overlap with the orthographic projection of the first electrode and the second electrode on the substrate.

[0018] In the light-emitting device provided in the embodiments of the present disclosure, each of the first bridging electrode and the third bridging electrode includes a first portion extending along the first direction and a second portion extending along the second direction, the orthographic projections of the first portion of the first bridging electrode and the first portion of the third bridging electrode on the substrate overlap with the orthographic projections of the first electrode and the second electrode on the substrate respectively, the orthographic projection of the second portion of the first bridging electrode on the substrate does not overlap with the orthographic projection of the first electrode on the substrate, and the orthographic projection of the second portion of the third bridging electrode on the substrate does not overlap with the orthographic projection of the second electrode on the substrate.

[0019] In the light-emitting device provided in the embodiment of the present disclosure, the bridging electrode further includes a fourth bridging electrode and a fifth bridging electrode, the first light-emitting unit and the second light-emitting unit are further connected through the fourth bridging electrode, the third light-emitting unit and the fourth light-emitting unit are further connected through the fifth bridging electrode, the fourth bridging electrode and the first bridging electrode are located on both sides of the first electrode, and the fifth bridging electrode and the second bridging electrode are located on both sides of the second electrode.

[0020] In the light emitting device provided by the embodiment of the present disclosure, the first bridging electrode is Z-shaped, the second bridging electrode is L-shaped, and the third bridging electrode is L-shaped.

[0021] In the light-emitting device provided in the embodiments of the present disclosure, the first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit are respectively located in four areas divided by two center lines of the substrate, the first light-emitting unit and the second light-emitting unit are arranged along the second direction, the third light-emitting unit and the fourth light-emitting unit are arranged along the second direction, the first light-emitting unit and the third light-emitting unit are arranged along the first direction, the second light-emitting unit and the fourth light-emitting unit are arranged along the first direction, and the second bridging electrode includes an inclined portion, which is inclined relative to the first direction and inclined relative to the second direction.

[0022] In the light emitting device provided by the embodiment of the present disclosure, the third bridging electrode has a middle portion extending along the first direction and portions located on both sides of the middle portion and extending along the second direction.

[0023] In the light-emitting device provided in the embodiment of the present disclosure, the bridging electrode also includes a first connecting electrode and a second connecting electrode, the orthographic projection of the first connecting electrode on the substrate is located within the orthographic projection of the first light-emitting unit on the substrate, and the orthographic projection of the second connecting electrode on the substrate is located within the orthographic projection of the fourth light-emitting unit on the substrate.

[0024] In the light emitting device provided by the embodiment of the present disclosure, the second bridging electrode has an opening, and the opening of the second bridging electrode faces the first light emitting unit.

[0025] In the light-emitting device provided in the embodiments of the present disclosure, the first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit are respectively located in four areas divided by two diagonal lines of a rectangle, the first light-emitting unit and the fourth light-emitting unit are arranged along the first direction, the second light-emitting unit and the third light-emitting unit are arranged along the second direction, and the second bridging electrode passes through the intersection of the two diagonal lines.

[0026] In the light emitting device provided by the embodiment of the present disclosure, at least one of the first bridge electrode, the second bridge electrode, and the third bridge electrode has a bent portion.

[0027] In the light-emitting device provided in the embodiment of the present disclosure, the first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit are arranged along the second direction, the first bridging electrode and the second bridging electrode are respectively arranged on both sides of the second light-emitting unit in the first direction, and the second bridging electrode and the third bridging electrode are respectively arranged on both sides of the third light-emitting unit in the first direction.

[0028] In the light emitting device provided by the embodiment of the present disclosure, at least one of the first bridging electrode, the second bridging electrode, and the third bridging electrode is in a zigzag shape.

[0029] In the light emitting device provided by the embodiment of the present disclosure, the thickness of each of the first electrode and the second electrode is greater than or equal to 8 μm.

[0030] In the light emitting device provided by the embodiment of the present disclosure, the thickness of each of the first electrode and the second electrode is less than or equal to 15 μm.

[0031] In the light emitting device provided by the embodiment of the present disclosure, each of the first electrode and the second electrode includes a first electrode portion and a second electrode portion that are stacked.

[0032] In the light emitting device provided by the embodiment of the present disclosure, the material of the second electrode portion includes solder, and the materials of the first electrode portion and the second electrode portion are different.

[0033] In the light-emitting device provided in the embodiment of the present disclosure, the light-emitting device also includes an anti-top-injury structure, which is located in the area enclosed by the first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit, and no conductive structure is set in the area where the anti-top-injury structure is located.

[0034] In the light-emitting device provided in the embodiment of the present disclosure, the light-emitting device also includes a first passivation layer, a second passivation layer, and a third passivation layer, the bridging electrode is located on the first passivation layer, the second passivation layer is located on the bridging electrode, the third passivation layer is located on the second passivation layer, and the third passivation layer also serves as a Bragg reflector.

[0035] In the light-emitting device provided in the embodiment of the present disclosure, the light-emitting device further includes a distributed Bragg reflector film layer, wherein the distributed Bragg reflector film layer is located on a side of the substrate where the plurality of light-emitting units are not provided.

[0036] The embodiment of the present disclosure also provides a light-emitting substrate, comprising any of the above-mentioned light-emitting devices.

[0037] The embodiment of the present disclosure further provides a backlight module, comprising any of the above-mentioned light-emitting substrates.

[0038] An embodiment of the present disclosure further provides a display device comprising any of the above-mentioned backlight modules. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, rather than limiting the present disclosure.

[0040] FIG1 is a cross-sectional view of a carrier substrate and a manufacturing process diagram of the carrier substrate.

[0041] FIG2 is a cross-sectional view of a carrier substrate and a manufacturing process diagram of the carrier substrate.

[0042] FIG3 is a schematic diagram of die-bonding rotation.

[0043] FIG4 shows a schematic diagram of a light emitting device.

[0044] FIG5 is a schematic diagram of region division of a light emitting device provided by an embodiment of the present disclosure.

[0045] FIG6 is a schematic diagram of a light-emitting unit, a first electrode, and a second electrode in a light-emitting device provided by an embodiment of the present disclosure.

[0046] FIG7 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0047] FIG8 is a schematic diagram illustrating the dimensions of a light-emitting device provided in an embodiment of the present disclosure.

[0048] FIG9 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0049] FIG10 is a schematic diagram showing the dimensions of a light-emitting device provided in an embodiment of the present disclosure.

[0050] FIG11 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0051] FIG12 is a schematic diagram showing the dimensions of a light-emitting device provided in an embodiment of the present disclosure.

[0052] FIG13 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0053] FIG14 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0054] FIG15 is a schematic diagram showing the dimensions of a light-emitting device provided in an embodiment of the present disclosure.

[0055] FIG16 is a schematic diagram of area division of a light-emitting device and light-emitting units in the light-emitting device provided by an embodiment of the present disclosure.

[0056] FIG17 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0057] FIG18 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0058] FIG19 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0059] FIG20 is a schematic diagram of regional division of a light-emitting device provided in an embodiment of the present disclosure.

[0060] FIG21 is a schematic diagram of a light-emitting unit, a first electrode, and a second electrode in a light-emitting device provided in an embodiment of the present disclosure.

[0061] FIG22 is a schematic diagram showing the dimensions of a light-emitting device provided in an embodiment of the present disclosure.

[0062] FIG23 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0063] FIG24 is a schematic diagram showing the dimensions of a light-emitting device provided in an embodiment of the present disclosure.

[0064] FIG25 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0065] FIG26 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0066] FIG27 is a schematic diagram of regional division of a light-emitting device provided in an embodiment of the present disclosure.

[0067] FIG28 is a schematic diagram of a light-emitting unit, a first electrode, and a second electrode in a light-emitting device provided in an embodiment of the present disclosure.

[0068] FIG29 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0069] FIG30 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0070] FIG31 is a schematic diagram of the dimensions of a light-emitting device provided in an embodiment of the present disclosure.

[0071] FIG32 is a schematic diagram showing the structure and dimensions of a light-emitting device provided in another embodiment of the present disclosure.

[0072] FIG33 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0073] FIG34 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0074] FIG35 is a cross-sectional view of a light-emitting device provided in an embodiment of the present disclosure.

[0075] FIG36 is a cross-sectional view of a light-emitting device provided in accordance with another embodiment of the present disclosure.

[0076] FIG37 is a cross-sectional view of a light-emitting device provided in accordance with another embodiment of the present disclosure.

[0077] FIG38 is a schematic diagram of a light-emitting substrate provided in an embodiment of the present disclosure.

[0078] FIG39 is a schematic diagram of a display device provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0079] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0080] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by persons of ordinary skill in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

[0081] Currently, in the field of Mini LED backlights, the main research and development direction of various manufacturers is basically based on Mini LED backlight solutions based on printed circuit boards (PCBs) and passive matrices (PM). However, traditional PCB-based backlights have the disadvantages of high power consumption and poor heat dissipation. Therefore, PCB-based Mini LED backlight HDR 1400 requires fans for cooling. At the same time, due to the large warpage of the PCB, the light panels need to be spliced. The large warpage results in large PCB seams, which are very prone to problems such as uneven brightness (mura) at the seams. Glass-based substrates, on the other hand, have the advantages of high reflectivity, good heat dissipation, thin thickness, good warpage control, and high circuit precision, making them highly competitive in the Mini LED backlight field.

[0082] Leveraging its extensive experience in glass backplane development, BOE has pioneered a glass-based Mini LED backlight solution equipped with an Active Matrix (AM) driver, boasting high flatness, excellent heat dissipation, and compatibility with high-precision wiring and high-speed die-bonding processes. This chip-on-glass (COG)-based Mini LED backlight with AM driver ensures high panel flatness and improved thermal and humidity resistance. It boasts a stylish, ultra-thin, integrated design with no horizontal seams, and easily supports tens of thousands of zones, achieving an ultra-high brightness of 4000 nits while displaying 5K to 10K granularity. Combined with the AM driver's low-flicker solution, this solution delivers superior image quality and a smooth, flicker-free display.

[0083] To achieve low power consumption, typical glass-based Mini LED backlights utilize high-voltage, 6V Mini LEDs in sizes such as 0620, 0818, and 0916. However, to achieve high brightness, these high-voltage, 6V Mini LEDs require a higher current, necessitating thicker traces on the COG substrate to meet driver requirements. A 0620-sized light-emitting device is a Mini LED measuring 0.6 mil by 20 mil. A 0818-sized light-emitting device is a Mini LED measuring 0.8 mil by 18 mil. A 0916-sized light-emitting device is a Mini LED measuring 0.9 mil by 16 mil. The mil is an imperial unit, representing a unit of length; 1 mil equals 0.0254 mm.

[0084] For example, for TV projects, under the requirement of 1500nit peak brightness of the module (MDL), the current used by a high-voltage 6V Mini LED is 13.6mA, requiring a copper trace thickness of 4.5μm (copper thickness, i.e., Cu thickness) design. If a high-voltage 12V Mini LED is used, the current used can be reduced to 6.96mA, and only a 2.6μm thick copper trace is required. For MNT projects, under the requirement of 1600nit peak brightness of the MDL, the current used by a high-voltage 6V Mini LED is 3.8mA, requiring a Cu thickness design of 2.8μm. If a high-voltage 12V Mini LED is used, the current used can be reduced to 1.85mA, and the Cu thickness on the base plate (BP) can be reduced to 1.6μm.

[0085] Figure 1 is a cross-sectional view of a carrier substrate and a diagram showing the manufacturing process of the carrier substrate. Figure 2 is a cross-sectional view of a carrier substrate and a diagram showing the manufacturing process of the carrier substrate.

[0086] In FIG1 and FIG2 , Dep. represents a deposition process, and MASK represents a mask process.

[0087] Figure 1 shows a conductive pattern layer LY1 and a passivation layer PVX1. The carrier substrate shown in Figure 1 requires two masking processes, that is, the first masking process is used to form the conductive pattern layer LY1, and the second masking process is used to form the passivation layer PVX1.

[0088] Figure 2 also shows the conductive pattern layer LY1, the passivation layer PVX1-1, the optical adhesive layer OC1-1, the optical adhesive layer OC1-2, the passivation layer PVX1-2, the conductive pattern layer LY2, the passivation layer PVX2, and the optical adhesive layer OC2. The carrier substrate shown in Figure 2 requires six masking processes. That is, the first masking process is used to form the conductive pattern layer LY1, the second masking process is used to form the passivation layer PVX1-1 and the optical adhesive layer OC1-1, the third masking process is used to form the optical adhesive layer OC1-2, the fourth masking process is used to form the passivation layer PVX1-2, the fifth masking process is used to form the conductive pattern layer LY2, and the sixth masking process is used to form the passivation layer PVX2 and the optical adhesive layer OC2. Typically, each masking process uses a single mask.

[0089] Figures 1 and 2 illustrate a substrate BS and a buffer layer BF located on the substrate BS. Figures 1 and 2 also illustrate a bonding region R1 and a bonding region R2. For example, bonding region R1 is an LED bonding region, and bonding region R2 is a flexible printed circuit (FPC) bonding region.

[0090] The conductive pattern layer LY1 and the conductive pattern layer LY2 are each made of a conductive material. The conductive material in the conductive pattern layer LY1 includes a metal, such as copper (Cu), and can also be referred to as a copper (Cu) trace. The conductive material in the conductive pattern layer LY2 includes a metal, such as copper (Cu), and can also be referred to as a copper (Cu) trace. Of course, the copper (Cu) trace can also contain other elements. Typically, the Cu element in the Cu trace accounts for a large proportion.

[0091] The current Cu routing capability on the carrier substrate is that the maximum thickness of a single-layer copper routing (single copper) does not exceed 2.7μm, and the maximum thickness of a double-layer copper routing (double copper) does not exceed 2.7μm and 0.9μm respectively. Therefore, under the routing manufacturing capability of a conventional glass substrate, if a high-voltage 6V Mini LED is used, a double-copper routing solution needs to be designed on the COG substrate. As shown in Figure 2, six masks are used in the manufacture of the carrier substrate (i.e., six mask processes), which makes the manufacturing cost of the carrier substrate high, resulting in high costs for products based on COG-based Mini LED backlights and low product cost performance. Moreover, under the process capability of Cu routing on a conventional glass-based carrier substrate, if a high-voltage 6V Mini LED is used, the thickness of the Cu routing on the carrier substrate of some specification series of products exceeds the specification, making it impossible to layout and develop a full range of COG-based Mini LED products.

[0092] At the same time, because the best efficiency point of the commonly used flip-chip Mini LED is within 2mA, the greater the current used, the lower the luminous efficiency. The lower the photoelectric conversion efficiency of the Mini LED, the higher the power consumption of the backlight unit (BLU), the more serious the heat generation of the lamp board, and the shorter the service life. Taking the Mini LED with a high voltage of 6V and a size of 0916 as an example, its best efficiency point is 1mA, and the electro-optical conversion efficiency (Wall Plug Efficiency, WPE) is 64.26%. At 13.6mA and 6.96mA, the WPE values ​​are 53.1% and 58.4% respectively. At a high current of 13.6mA, the WPE of the LED is 5.3% lower than that at a low current of 6.96mA, and 11.08% lower than the best efficiency point. The light efficiency of the Mini LED is seriously wasted.

[0093] Figure 3 is a schematic diagram of die-bonding rotation. As shown in Figure 3, die-bonding rotation is caused by uneven forces on the light-emitting device 60 in directions X and Y. Figure 4 shows a schematic diagram of a light-emitting device 60. As shown in Figure 4, the light-emitting device 60 includes a substrate BS, a light-emitting unit 61 located on the substrate BS, and electrodes E1 and E2 respectively connected to the light-emitting unit 61. One of the electrodes E1 and E2 can be referred to as a P electrode, and the other of the electrodes E1 and E2 can be referred to as an N electrode.

[0094] Figure 3 shows the ejector pin ND in the solid crystal process. In the solid crystal process, the ejector pin ND pushes against the light emitting device 60. The light emitting device 60 shown in Figure 3 has a length of L and a width of W. When the length L is greater than the width W, the light emitting device 60 is rectangular. Because the light emitting device 60 is subjected to uneven forces in the directions X and Y, solid crystal rotation is triggered. The component forces of the light emitting device 60 in the directions X and Y are Fx and Fy respectively, and the resultant force on the light emitting device 60 is Fxy. The angle between the resultant force Fxy and the direction X is angle A1, and the force on the light emitting device 60 in the direction Z is Fz. Figure 3 (a) shows the direction X and the direction Y, and Figure 3 (b) shows the direction Z. For example, the direction Y is perpendicular to the direction X, and the direction Z is perpendicular to the direction X and perpendicular to the direction Y.

[0095] Because the mainstream Mini LED sizes of 0620, 0818, and 0916 are rectangular in design, the aspect ratio is approximately (1.8-3.3):1, which is relatively large. Under this aspect ratio, during die bonding, the uneven force on the LED in the X and Y directions will cause die rotation problems, resulting in low production yields for Mini LED backlight-related products, thereby further increasing the production cost of COG-based Mini LED backlights. Moreover, the larger the aspect ratio of the light-emitting device (chip), the higher the rotation rate. The defective die rotation rate of 0620 with an aspect ratio of 3.3:1 is 4%, while the defective die rotation rate of 0916 with an aspect ratio of 1.8:1 is 2%. For example, the die bonding process can use a die bonding mode with a UV film carrier film of 1020R, but is not limited to this.

[0096] For example, existing 6V high-voltage Mini LEDs in sizes such as 0620, 0818, and 0916 have smaller P and N electrodes. With a bump thickness of 8μm, insufficient solder pullback on the LED chip during soldering can lead to die rotation issues, further increasing the production cost of Mini LED-related products.

[0097] Table 1 shows the die-bonding rotation of Mini LEDs with sizes of 0916 and 0620. As can be seen from Table 1, the defective die-bonding rotation rate of Mini LEDs with sizes of 0916 and 0620 is relatively high.

[0098] Table 1. Die-bonding rotation of 0916 and 0620 Mini LEDs

[0099] As the global economy gradually weakens, consumers are becoming more price-sensitive to Mini LED products. Furthermore, from the perspective of industry upgrading, if the price range of upgraded Mini LED products can be maintained within 1.2 times that of existing products, it will drive large-scale replacement and upgrading. Therefore, improving the cost-effectiveness of Mini LED products is a top priority for promoting COG-based Mini LED backlight products and is key to seizing the initiative in the Mini LED industry.

[0100] The light-emitting device, light-emitting substrate, backlight module and display device provided by the embodiments of the present disclosure are intended to solve at least one of the following problems.

[0101] (1) BP double Cu routing design has high production cost.

[0102] To achieve high brightness requirements, the high-voltage 6V COG-based Mini LED uses a large current, and a dual Cu routing solution needs to be designed on the COG substrate, which increases the BP production cost. As a result, the cost of products based on COG-based Mini LED backlight is high, the product cost-effectiveness is low, and the market promotion progress is slow.

[0103] (2) Due to the limited process capability of Cu routing on BP, it is impossible to develop a full range of COG-based Mini LED products.

[0104] On the existing glass substrate BP, the maximum thickness of a single copper trace does not exceed 2.7μm, and the double copper does not exceed 3.6μm under the process capability. However, if a high-voltage 6V Mini LED is used, the thickness of the Cu trace on BP exceeds the specification, making it impossible to design and develop some models of COG-based Mini LED products.

[0105] (3) The aspect ratio of LED is large, and there is a rotation problem in the solid crystal.

[0106] Mainstream high-voltage Mini LEDs in sizes 0620, 0818, or 0916 are rectangular, with a large aspect ratio between 1.8:1 and 3.3:1. During the die-bonding process, for example, when using a UV film with a 1020R carrier film, uneven force on the LED in the X and Y directions can cause die rotation. Furthermore, the larger the aspect ratio of the chip (light-emitting device), the higher the incidence of rotation, resulting in low production yields for Mini LED backlight products and further increasing the production cost of COG-based Mini LED backlights.

[0107] (4) The size of the P electrode and N electrode of the LED is small, and the solder does not pull back the chip (light-emitting device) sufficiently.

[0108] 6V high-voltage Mini LEDs, typically in sizes like 0620, 0818, or 0916, have small P and N electrodes. With a bump thickness of 8μm, the solder on the LED chip (light-emitting device) cannot pull back sufficiently during soldering, further causing die rotation issues. For example, a bump refers to the portion of the P or N electrode located above the topmost insulating layer.

[0109] In response to the above four problems existing in the existing COG-based Mini LED backlight, the embodiments of the present disclosure provide a light-emitting device, a light-emitting substrate, a backlight module and a display device to solve at least one of the above problems.

[0110] Figure 5 is a schematic diagram of the regional division of a light-emitting device provided in an embodiment of the present disclosure. Figure 6 is a schematic diagram of the light-emitting unit, first electrode, and second electrode in a light-emitting device provided in an embodiment of the present disclosure. Figure 7 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure. Figure 8 is a schematic diagram of the dimensioning of a light-emitting device provided in an embodiment of the present disclosure. Figure 9 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure. Figure 10 is a schematic diagram of the dimensions of a light-emitting device provided in an embodiment of the present disclosure.

[0111] Figure 11 is a layout diagram of a light emitting device provided in an embodiment of the present disclosure. Figure 12 is a schematic diagram of the dimensions of a light emitting device provided in an embodiment of the present disclosure.

[0112] FIG13 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure.

[0113] Figure 14 is a layout diagram of a light emitting device provided in an embodiment of the present disclosure. Figure 15 is a schematic diagram of the dimensions of a light emitting device provided in an embodiment of the present disclosure.

[0114] Figure 16 is a schematic diagram of the region division of a light emitting device and the light emitting units in the light emitting device according to an embodiment of the present disclosure. Figure 17 is a layout diagram of a light emitting device according to an embodiment of the present disclosure.

[0115] Figure 18 is a schematic diagram of a light emitting device provided in accordance with an embodiment of the present disclosure. Figure 19 is a schematic diagram of a light emitting device provided in accordance with an embodiment of the present disclosure.

[0116] Figure 20 is a schematic diagram illustrating the regional divisions of a light-emitting device provided in accordance with an embodiment of the present disclosure. Figure 21 is a schematic diagram illustrating a light-emitting unit, a first electrode, and a second electrode in a light-emitting device provided in accordance with an embodiment of the present disclosure. Figure 22 is a schematic diagram illustrating the dimensions of a light-emitting device provided in accordance with an embodiment of the present disclosure. Figure 23 is a layout diagram of a light-emitting device provided in accordance with an embodiment of the present disclosure. Figure 24 is a schematic diagram illustrating the dimensions of a light-emitting device provided in accordance with an embodiment of the present disclosure.

[0117] Figure 25 is a schematic diagram of a light emitting device provided in an embodiment of the present disclosure. Figure 26 is a schematic diagram of a light emitting device provided in an embodiment of the present disclosure.

[0118] Figure 27 is a schematic diagram of the regional division of a light-emitting device provided in an embodiment of the present disclosure. Figure 28 is a schematic diagram of the light-emitting unit, first electrode, and second electrode in a light-emitting device provided in an embodiment of the present disclosure. Figure 29 is a schematic diagram of a light-emitting device provided in an embodiment of the present disclosure. Figure 30 is a layout diagram of a light-emitting device provided in an embodiment of the present disclosure. Figure 31 is a schematic diagram of the dimensions of a light-emitting device provided in an embodiment of the present disclosure. Figure 32 is a schematic diagram of the structure and dimensions of a light-emitting device provided in another embodiment of the present disclosure.

[0119] Figure 33 is a schematic diagram of a light emitting device provided in an embodiment of the present disclosure. Figure 34 is a schematic diagram of a light emitting device provided in an embodiment of the present disclosure.

[0120] Figure 35 is a cross-sectional view of a light emitting device according to an embodiment of the present disclosure. Figure 36 is a cross-sectional view of a light emitting device according to another embodiment of the present disclosure. Figure 37 is a cross-sectional view of a light emitting device according to another embodiment of the present disclosure.

[0121] Figure 38 is a schematic diagram of a light-emitting substrate provided in an embodiment of the present disclosure. Figure 39 is a schematic diagram of a display device provided in an embodiment of the present disclosure.

[0122] With reference to Figures 5 to 34 , embodiments of the present disclosure provide a light-emitting device comprising: a substrate BS, a plurality of light-emitting cells 100, a first electrode E1, a second electrode E2, and a bridging electrode BD. The plurality of light-emitting cells 100 are disposed on the substrate BS and connected in series; the first electrode E1 is connected to one end of the plurality of light-emitting cells 100 connected in series; the second electrode E2 is connected to the other end of the plurality of light-emitting cells 100 connected in series; and the bridging electrode BD is configured to connect two light-emitting cells 100 from the plurality of light-emitting cells 100. The plurality of light-emitting cells 100 are configured to emit light in response to a voltage difference between the first electrode E1 and the second electrode E2.

[0123] 7 to 15 , 17 , 19 , 22 to 24 , 26 , 29 , 31 to 32 , and 34 , an orthographic projection of at least one of the first electrode E1 and the second electrode E2 on the substrate BS overlaps with an orthographic projection of at least two of the plurality of light emitting units 100 on the substrate BS.

[0124] The embodiments of the present disclosure are described using an example in which the orthographic projection of at least one of the first electrode E1 and the second electrode E2 on the substrate BS overlaps with the orthographic projections of two or three light-emitting units 100 on the substrate BS. The number of light-emitting units 100 overlapping the first electrode E1 or the second electrode E2 is not limited to two or three, but is related to the number of light-emitting units in the light-emitting device and the arrangement of the light-emitting units.

[0125] The light-emitting device 66 provided in the embodiment of the present disclosure includes a plurality of light-emitting units 100 connected in series, and the orthographic projection of at least one of the first electrode E1 and the second electrode E2 on the substrate BS overlaps with the orthographic projection of at least two of the plurality of light-emitting units 100 on the substrate BS. Thus, at least one of the first electrode E1 and the second electrode E2 can have a larger area, which is beneficial to the solidification, thereby avoiding insufficient pull-back of the solder on the light-emitting device during the solidification process, and avoiding or reducing solidification rotation.

[0126] The light-emitting device 66 provided in the embodiment of the present disclosure has a plurality of light-emitting units 10 connected in series. In order to achieve the same power, the used current can be reduced, which is beneficial to the production of the backplane. For example, a conductive pattern layer, i.e. (single Cu routing), can be used on the backplane to avoid the cumbersome process of using double Cu routing.

[0127] For example, as shown in Figures 6 to 15, 17, 19, 21 to 24, 26, 29, 31 to 32, and 34, in the light-emitting device, the first electrode E1 and the second electrode E2 are spaced apart from each other, the first electrode E1 and the second electrode E2 are arranged along a direction X, and each of the first electrode E1 and the second electrode E2 extends along a direction Y, and the direction X intersects the direction Y. Figures 6, 22, and 28 show a gap 80 between the first electrode E1 and the second electrode E2. The first electrode E1 and the second electrode E2 are spaced apart from each other in a plan view.

[0128] In some figures of the embodiments of the present disclosure, plan views illustrate directions X and Y, while cross-sectional views illustrate direction Z. Directions Y and X are both parallel to the main surface of the substrate BS. Direction Z is perpendicular to the main surface of the substrate BS. For example, directions Y and X intersect. The embodiments of the present disclosure are described using the example of directions Y and X being perpendicular. The main surface of the substrate BS is the surface of the substrate BS on which the light-emitting units are formed.

[0129] As shown in Figures 8, 10, 12, 15, 22, 24, and 31 to 32, the length of the substrate BS is L, the width of the substrate BS is W, the length of the first electrode E1 is L1, the width of the first electrode E1 is W1, and the size of the second electrode E2 can be the same as the size of the first electrode E1, or of course, can be different. The embodiments of the present disclosure are described using the example that the first electrode E1 and the second electrode E2 have the same size.

[0130] For example, as shown in Figures 8, 10, 12, 15, 22, 24, and 31 to 32, in the light-emitting device, the ratio of the maximum dimension of the substrate BS along direction X to the maximum dimension of the substrate BS along direction Y is (1-1.18):1.

[0131] For example, as shown in Figures 8, 10, 12, 15, 22, 24, and 31 to 32, in the light-emitting device, the ratio of the maximum dimension of the multiple light-emitting units 100 along direction X to the maximum dimension of the multiple light-emitting units 100 along direction Y is (1-1.18):1.

[0132] The light-emitting device provided by the embodiments of the present disclosure effectively reduces the problem of die-bonding rotation by adjusting the size of the light-emitting device or the light-emitting units therein to (1-1.18:1) so that the light-emitting device is square or nearly square. When the size of the light-emitting units in the light-emitting device is 1:1, the problem of die-bonding rotation can be further effectively reduced.

[0133] Table 2 shows the stress conditions of Mini LEDs of different sizes. As can be seen from Table 2, reducing the aspect ratio of Mini LEDs can effectively reduce the problem of die rotation during bonding.

[0134] Table 2. Stress conditions of Mini LEDs of different sizes

[0135] For example, as shown in Figures 10, 12, 15, 24, and 31 to 32, in the light emitting device, the ratio of the maximum dimension of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension of the substrate BS along the direction X is greater than 19%.

[0136] 10 , 12 , 15 , 24 , and 31 to 32 , in the light emitting device, a ratio of a maximum dimension of each of the first and second electrodes E1 and E2 along the direction X to a maximum dimension of the plurality of light emitting units 100 along the direction X is greater than 19%.

[0137] In the light emitting device provided by the embodiment of the present disclosure, the first electrode E1 and the second electrode E2 occupy a larger proportion in the direction X, so as to have a larger area.

[0138] For example, in the light emitting device, a ratio of a dimension of each of the first electrode E1 and the second electrode E2 along the direction X to a maximum dimension of the plurality of light emitting cells 100 along the direction X is less than or equal to 26%.

[0139] In the light-emitting device provided in the embodiments of the present disclosure, the ratio of the dimension of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension of the plurality of light-emitting units 100 or the substrate BS along the direction X is limited, so as to facilitate obtaining the first electrode E1 and the second electrode E2 with a larger width and facilitate the layout design of the first electrode E1 and the second electrode E2.

[0140] As shown in FIG10 , in the light-emitting device, the ratio of the maximum dimension W1 of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension W of the substrate BS along the direction X is W1 / W, where W1 / W = 75 μm / 381 μm = 19.6%, which is greater than 19%. Because the maximum dimension of the plurality of light-emitting units 100 along the direction X is smaller than the maximum dimension of the substrate BS along the direction X, the ratio of the maximum dimension of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension of the plurality of light-emitting units 100 along the direction X is greater than 19.6%, which is greater than 19%.

[0141] As shown in FIG12 , in the light-emitting device, the ratio of the maximum dimension W1 of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension W of the substrate BS along the direction X is W1 / W, where W1 / W = 98.5 μm / 381 μm = 25.8%, which is greater than 19%. Because the maximum dimension of the plurality of light-emitting units 100 along the direction X is smaller than the maximum dimension of the substrate BS along the direction X, the ratio of the maximum dimension of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension of the plurality of light-emitting units 100 along the direction X is greater than 25.8%, which is greater than 19%.

[0142] As shown in Figures 15 and 24, in the light-emitting device, the ratio of the maximum dimension W1 of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension W of the substrate BS along the direction X is W1 / W, where W1 / W = 104.5 μm / 375 μm = 25.8%, which is greater than 19%. Because the maximum dimension of the plurality of light-emitting units 100 along the direction X is smaller than the maximum dimension of the substrate BS along the direction X, the ratio of the maximum dimension of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension of the plurality of light-emitting units 100 along the direction X is greater than 25.8%, which is greater than 19%.

[0143] As shown in Figures 31 and 32 , in the light-emitting device, the ratio of the maximum dimension W1 of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension W of the substrate BS along the direction X is W1 / W, where W1 / W = 97.5 μm / 375 μm = 26%, which is greater than 19%. Because the maximum dimension of the plurality of light-emitting units 100 along the direction X is smaller than the maximum dimension of the substrate BS along the direction X, the ratio of the maximum dimension of each of the first electrode E1 and the second electrode E2 along the direction X to the maximum dimension of the plurality of light-emitting units 100 along the direction X is greater than 26%, which is greater than 19%.

[0144] For example, in the light emitting device, a gap 80 is provided between the first electrode E1 and the second electrode E2 , and a ratio of a minimum dimension of the gap along the direction X to a maximum dimension of the substrate BS along the direction X is greater than or equal to 30% and less than or equal to 35%.

[0145] For example, in the light emitting device, a gap 80 is provided between the first electrode E1 and the second electrode E2 , and a ratio of a minimum dimension of the gap along the direction X to a maximum dimension of the plurality of light emitting units 100 along the direction X is greater than or equal to 30% and less than or equal to 35%.

[0146] As shown in FIG10 , in the light emitting device, the ratio of the minimum dimension of the gap 80 along the direction X to the maximum dimension of the plurality of light emitting units 100 along the direction X is G / W, G / W=115 μm / 381 μm=30%, which is greater than or equal to 30% and less than or equal to 35%.

[0147] As shown in FIG12 , in the light-emitting device, the ratio of the minimum dimension of the gap 80 along the direction X to the maximum dimension of the plurality of light-emitting units 100 along the direction X is G / W, G / W=134 μm / 381 μm=35%, which is greater than or equal to 30% and less than or equal to 35%.

[0148] As shown in Figures 15, 24, 31 and 32, in the light-emitting device, the ratio of the minimum dimension of the gap 80 along the direction X to the maximum dimension of the plurality of light-emitting units 100 along the direction X is G / W, G / W = 130 μm / 375 μm = 35%, which is greater than or equal to 30% and less than or equal to 35%.

[0149] In the light-emitting device provided in the embodiments of the present disclosure, the ratio of the minimum size of the gap along the direction X to the maximum size of the substrate BS or the plurality of light-emitting units 100 along the direction X is limited, so as to facilitate obtaining a larger gap, obtaining a first electrode E1 and a second electrode E2 of larger width, and facilitating the layout design of the first electrode E1 and the second electrode E2.

[0150] Referring to Figures 5 to 19 , the substrate BS is divided into four regions by a center line La and a center line Lb. The four regions include region Ra, region Rb, region Rc, and region Rd. Each region is provided with a light-emitting unit 100. Figures 5 to 19 illustrate the arrangement of four light-emitting units on the substrate BS as an example. For example, the center line La can be referred to as a horizontal center line, and the center line Lb can be referred to as a vertical center line.

[0151] 20 to 26 , the substrate BS is divided into four regions by diagonal lines Lc and Ld. The four regions include region Ra, region Rb, region Rc, and region Rd. A light-emitting unit 100 is provided in each region. FIG. 20 to 26 illustrate an example of providing four light-emitting units on the substrate BS.

[0152] 27 to 32 , the substrate BS is divided into four regions along a direction Y, including region Ra, region Rb, region Rc, and region Rd. A light emitting unit 100 is provided in each region. FIG. 27 to 32 illustrate an example of providing four light emitting units on the substrate BS.

[0153] The embodiment of the present disclosure is described by taking the arrangement of four light-emitting units on the substrate BS as an example. It should be noted that more than four light-emitting units may be arranged on the substrate BS.

[0154] For example, referring to Figures 5 to 32, in the light emitting device, the plurality of light emitting units 100 include a first light emitting unit 101, a second light emitting unit 102, a third light emitting unit 103, and a fourth light emitting unit 104, and the bridge electrode BD includes a first bridge electrode B1, a second bridge electrode B2, and a third bridge electrode B3.

[0155] For example, referring to Figures 5 to 32, in the light-emitting device, the first light-emitting unit 101 and the second light-emitting unit 102 are connected through the first bridging electrode B1, the second light-emitting unit 102 and the third light-emitting unit 103 are connected through the second bridging electrode B2, and the third light-emitting unit 103 and the fourth light-emitting unit 104 are connected through the third bridging electrode B3.

[0156] For example, as shown in Figures 9, 11 and 13, in the light emitting device, at least a portion of the first bridging electrode B1 and at least a portion of the third bridging electrode B3 are located between the first electrode E1 and the second electrode E2, and the second bridging electrode B2 extends along the direction X and is located on the side where the short sides of the first electrode E1 and the second electrode E2 are located.

[0157] 9, 11 and 13, in the light emitting device, the bridge electrode BD is located within the outer contour of the region where the first electrode E1 and the second electrode E2 are located. For example, the outer contour of the region where the first electrode E1 and the second electrode E2 are located is rectangular, but not limited thereto.

[0158] For example, as shown in Figures 9 and 11, in the light emitting device, each of the first bridging electrode B1 and the third bridging electrode B3 extends along the direction Y, and the orthographic projection of each of the first bridging electrode B1 and the third bridging electrode B3 on the substrate BS does not overlap with the orthographic projection of the first electrode E1 and the second electrode E2 on the substrate BS.

[0159] For example, as shown in Figure 13, in the light-emitting device, each of the first bridging electrode B1 and the third bridging electrode B3 includes a first portion extending along direction X and a second portion extending along direction Y. The orthographic projections of the first portion B11 of the first bridging electrode B1 and the first portion B31 of the third bridging electrode B3 on substrate BS overlap with the orthographic projections of the first electrode E1 and the second electrode E2, respectively. The orthographic projection of the second portion B12 of the first bridging electrode B1 on substrate BS does not overlap with the orthographic projection of the first electrode E1, and the orthographic projection of the second portion B32 of the third bridging electrode B3 on substrate BS does not overlap with the orthographic projection of the second electrode E2. By designing the bridging electrodes to be folded inward, the gap size, the area of ​​the first electrode E1, and the area of ​​the second electrode E2 are increased, thereby improving the offset tolerance and thrust force during die bonding.

[0160] For example, as shown in Figure 9, in the light-emitting device, the bridging electrode BD also includes a fourth bridging electrode B4 and a fifth bridging electrode B5. The first light-emitting unit 101 and the second light-emitting unit 102 are also connected through the fourth bridging electrode B4, and the third light-emitting unit 103 and the fourth light-emitting unit 104 are also connected through the fifth bridging electrode B5. The fourth bridging electrode B4 and the first bridging electrode B1 are located on both sides of the first electrode E1, and the fifth bridging electrode B5 and the second bridging electrode B2 are located on both sides of the second electrode E2.

[0161] For example, referring to Figures 5 to 15, in the light-emitting device, the substrate is rectangular, the first light-emitting unit 101, the second light-emitting unit 102, the third light-emitting unit 103, and the fourth light-emitting unit 104 are respectively located in four areas divided by two center lines of the rectangle, the first light-emitting unit 101 and the second light-emitting unit 102 are arranged along direction Y, the third light-emitting unit 103 and the fourth light-emitting unit 104 are arranged along direction Y, the first light-emitting unit 101 and the fourth light-emitting unit 104 are arranged along direction X, and the second light-emitting unit 102 and the third light-emitting unit 103 are arranged along direction X.

[0162] For example, as shown in FIG14 , the first bridge electrode B1 is Z-shaped, the second bridge electrode B2 is L-shaped, and the third bridge electrode B3 is L-shaped.

[0163] For example, as shown in Figures 16 and 17 , in a light-emitting device, the substrate is rectangular, and the first light-emitting unit 101, the second light-emitting unit 102, the third light-emitting unit 103, and the fourth light-emitting unit 104 are respectively located in four regions divided by two midlines of the rectangle. The first light-emitting unit 101 and the second light-emitting unit 102 are arranged along direction Y, the third light-emitting unit 103 and the fourth light-emitting unit 104 are arranged along direction Y, the first light-emitting unit 101 and the third light-emitting unit 103 are arranged along direction X, and the second light-emitting unit 102 and the fourth light-emitting unit 104 are arranged along direction X. As shown in Figure 17 , the second bridging electrode B2 includes an inclined portion B20 that is inclined relative to both direction X and direction Y.

[0164] 17 , in the light emitting device, the third bridging electrode B3 has a middle portion B30 extending in direction X and portions located on both sides of the middle portion B30 and extending in direction Y. FIG17 shows portions B31 and B32 located on both sides of the middle portion B30.

[0165] For example, as shown in FIG17 , in a light-emitting device, the second bridging electrode B2 has an opening B23 that faces the first light-emitting unit 101. Each of the portions (the first portion B21 and the second portion B22) located on either side of the inclined portion B20 forms an obtuse angle with the inclined portion B20. Specifically, the first portion B21 forms an obtuse angle with the inclined portion B20, and the second portion B22 forms an obtuse angle with the inclined portion B20. The inclined portion B20, the first portion B21, and the second portion B22 form an obtuse angle with the inclined portion B20. The inclined portion B20, the first portion B21, and the second portion B22 form an opening B23 that faces the first light-emitting unit 101.

[0166] For example, as shown in FIG17 , in the light emitting device, the second bridging electrode B2 is C-shaped.

[0167] For example, as shown in FIG17 and FIG30 , in the light emitting device, the bridging electrode BD further includes a connecting electrode B0 , and the orthographic projection of the connecting electrode B0 on ​​the substrate BS is located within the orthographic projection of the first light emitting unit 101 on the substrate BS.

[0168] For example, as shown in FIG17 and FIG30 , in the light emitting device, the bridging electrode BD further includes a connecting electrode B6 , and the orthographic projection of the connecting electrode B6 on the substrate BS is located within the orthographic projection of the fourth light emitting unit 104 on the substrate BS.

[0169] For example, as shown in Figures 20 to 26, in the light-emitting device, the substrate is rectangular, the first light-emitting unit 101, the second light-emitting unit 102, the third light-emitting unit 103, and the fourth light-emitting unit 104 are respectively located in four areas divided by the two diagonal lines of the rectangle, the first light-emitting unit 101 and the fourth light-emitting unit 104 are arranged along the direction X, the second light-emitting unit 102 and the third light-emitting unit 103 are arranged along the direction Y, and the second bridging electrode B2 passes through the intersection of the two diagonals. By designing the bridging electrode across the intersection, the current expansion effect is increased and the light shielding effect of the bridging electrode on light is reduced, thereby having a higher light efficiency.

[0170] For example, as shown in FIG23 , in the light emitting device, at least one of the first bridge electrode B1, the second bridge electrode B2, and the third bridge electrode B3 has a bent portion. As shown in FIG23 , each of the first bridge electrode B1, the second bridge electrode B2, and the third bridge electrode B3 has a bent portion.

[0171] For example, as shown in Figures 27 to 34, in the light-emitting device, the first light-emitting unit 101, the second light-emitting unit 102, the third light-emitting unit 103, and the fourth light-emitting unit 104 are arranged along the direction Y, the first bridging electrode B1 and the second bridging electrode B2 are respectively arranged on both sides of the second light-emitting unit 102 in the direction X, and the second bridging electrode B2 and the third bridging electrode B3 are respectively arranged on both sides of the third light-emitting unit 103 in the direction X.

[0172] For example, as shown in FIG30 , in the light emitting device, at least one of the first bridge electrode B1, the second bridge electrode B2, and the third bridge electrode B3 is in a zigzag shape. As shown in FIG30 , each of the first bridge electrode B1, the second bridge electrode B2, and the third bridge electrode B3 is in a zigzag shape.

[0173] For example, as shown in FIG30 , the Z-shaped bridge electrode includes a middle portion Z0 and a first portion Z1 and a second portion Z2 located on both sides of the middle portion Z0 and connected to both ends of the middle portion Z0 .

[0174] For example, as shown in Fig. 30 , the first portion Z1 extends along the direction Y, and the second portion Z2 extends along the direction Y. For example, as shown in Fig. 30 , the middle portion Z0 extends along the direction X.

[0175] For example, as shown in Figures 18, 19, 25, 26, 33, and 34, the light-emitting device further includes an anti-scratch structure 50. The anti-scratch structure 50 is located within the region enclosed by the first light-emitting unit 101, the second light-emitting unit 102, the third light-emitting unit 103, and the fourth light-emitting unit 104. No conductive structure is provided within the region where the anti-scratch structure 50 is located. The anti-scratch structure 50 is provided to prevent damage to the light-emitting device during the die bonding process.

[0176] In the light-emitting device provided by the embodiment of the present disclosure, an electrical isolation area is set at the intersection of the horizontal center line and the vertical center line of the Mini LED. When the LED is transferred to the driving substrate using a needle-type die-bonding machine, when the ejector pin hits the surface where the first electrode E1 and the second electrode E2 of the LED are located, the ejector pin of the die-bonding machine will cause damage to the first electrode E1 and the second electrode E2 of the LED, thereby causing electrical abnormalities in the LED. In order to prevent damage to the LED during the manufacturing process, an anti-damage structure 50 is added to the middle part. In this design, the area where the middle anti-damage structure 50 is located is an electrically isolated area. Through electrical isolation measures, even if this position is damaged, it will not cause electrical abnormalities in the LED.

[0177] For example, as shown in FIG. 35 to FIG. 37 , in the light emitting device, the thickness of each of the first electrode E1 and the second electrode E2 is greater than or equal to 8 μm.

[0178] For example, as shown in FIG. 35 to FIG. 37 , in the light emitting device, the thickness of each of the first electrode E1 and the second electrode E2 is less than or equal to 15 μm.

[0179] As shown in Figures 35 and 37, the first electrode E1 may include a first electrode portion P1 and a second electrode portion P2. For example, the material of the second electrode portion P2 includes solder, such as tin. The first electrode portion P1 and the second electrode portion P2 may be made of different materials. The material of the first electrode portion P1 may include a metal. For example, the metal in the first electrode portion P1 may include gold (Au), aluminum (Al), platinum (Pt), titanium (Ti), nickel (Ni), or the like.

[0180] For example, the material of the bridge electrode BD includes metal. For another example, the metal in the bridge electrode BD includes copper.

[0181] For example, the first electrode portion P1 and the second electrode portion P2 have different thicknesses. Typically, the thickness of the first electrode portion P1 is smaller than the thickness of the second electrode portion P2.

[0182] As shown in FIG36 , the second electrode E2 may include a first electrode portion Pa and a second electrode portion Pb. For example, the material of the second electrode portion Pb includes solder, such as tin. The first electrode portion Pa and the second electrode portion Pb may be made of different materials. The material of the first electrode portion Pb may include a metal. For example, the metal in the first electrode portion Pb may include gold (Au), aluminum (Al), platinum (Pt), titanium (Ti), nickel (Ni), or the like.

[0183] For example, the material of the bridge electrode BD includes metal. For another example, the metal in the bridge electrode BD includes copper.

[0184] For example, the first electrode portion Pa and the second electrode portion Pb have different thicknesses. Typically, the thickness of the first electrode portion Pa is smaller than the thickness of the second electrode portion Pb.

[0185] For example, as shown in Figures 36 to 37, the light-emitting device also includes a passivation layer PVX1, a passivation layer PVX2, and a passivation layer PVX3, the bridging electrode BD is located on the passivation layer PVX1, the passivation layer PVX2 is located on the bridging electrode BD, the passivation layer PVX3 is located on the passivation layer PVX2, and the passivation layer PVX3 also serves as a cloth Bragg reflector DBR1.

[0186] For example, as shown in FIG37 , in order to increase the aperture angle, the light emitting device further includes a distributed Bragg reflector film layer DBR2 , which is located on a side of the substrate BS where the plurality of light emitting units 100 are not provided.

[0187] The light emitting device provided in the embodiment of the present disclosure may be a 12V high voltage Mini LED, but is not limited thereto. If the voltage of one light emitting unit is 3V, the voltage difference across the four light emitting units may be 12V.

[0188] In the light-emitting device provided in the embodiments of the present disclosure, a plurality of light-emitting units are connected in series, and the arrangement of the four light-emitting units can be a 2*2 array (as shown in Figures 5 to 19), a ring (Figures 20 to 26) and a 1*4 array (Figures 27 to 32).

[0189] In the light-emitting device provided in the embodiment of the present disclosure, the shape of the light-emitting unit 100 can be rectangular, square, or triangular (trapezoidal).

[0190] 5 to 19 are based on the horizontal and vertical midlines of the light emitting device as the dividing references, and the light emitting unit 100 is four rectangles arranged in a 2*2 manner.

[0191] 20 to 26 use two diagonal lines of the light emitting device as a basis for dividing the light emitting unit. The light emitting unit 100 is composed of four triangles arranged in a circular manner of 1:1:1:1.

[0192] Figures 27 through 32 use the 1 / 4 horizontal line of the light-emitting device as the basis for dividing the light-emitting unit. The light-emitting unit 100 is composed of four rectangles arranged in a 1*4 pattern. The bottom surface of the 12V high-voltage Mini LED is where the first and second electrodes E1 and E2 of the Mini LED are located. It includes two structures: the positive electrode P (P electrode) and the negative electrode N (N electrode). A gap is formed between the P and N electrodes to prevent electrical shorting.

[0193] As shown in Figures 9 and 10, the light-emitting device can be a 12V high-voltage Mini LED. The device's dimensions are 381μm by 381μm, the gap 80's dimension G is 115μm, and the dimensions of the first electrode E1 and the second electrode E2 are both 271μm by 75μm. This layout uses the Mini LED's horizontal and vertical centerlines as the dividing lines for the light-emitting units, arranging four rectangular light-emitting units 100 in a 2x2 array. The four rectangular light-emitting units 100 are connected by five staggered, elongated bridge electrodes. The first, fourth, third, and fifth bridge electrodes B1, B4, B3, and B5 are four staggered, elongated bridge electrodes. The first and fourth bridge electrodes B1 and B4 are located to the left and right of the first electrode E1, while the third and fifth bridge electrodes B3 and B5 are located to the left and right of the second electrode E2, parallel to the long sides of the first and second electrodes E1, i.e., parallel to the direction Y. The first bridging electrode B1 and the fourth bridging electrode B4 are both used to connect the first light-emitting unit 101 and the second light-emitting unit 102. The third bridging electrode B3 and the fifth bridging electrode B5 are both used to connect the third light-emitting unit 103 and the fourth light-emitting unit 104. The elongated second bridging electrode B2 is located at the bottom of the layout, parallel to the short sides of the first and second electrodes E1 and E2, that is, parallel to the direction X. The second bridging electrode B2 is used to connect the second light-emitting unit 102 and the third light-emitting unit 103. This layout design is relatively symmetrical, which can obtain a larger area for the first and second electrodes E1 and E2. However, compared with other light-emitting devices provided in the embodiments of the present disclosure, the gap size, the area of ​​the first electrode E1, and the area of ​​the second electrode E2 are relatively small, suitable for scenarios requiring low die-bonding process offset and low thrust. The corresponding design values ​​for the P and N electrodes on the backplate (BP) are 311*115μm, and the design value for the gap between the P and N electrodes on the backplate (BP) is 135μm, but this is not limited to these.

[0194] As shown in Figures 11 and 12, the light-emitting device can be a 12V high-voltage Mini LED. The overall dimensions of the light-emitting device are 381μm*381μm, the dimension G of the gap 80 is 134μm, and the dimensions of the first electrode E1 and the second electrode E2 are both 271μm*98.5μm. This layout uses the horizontal and vertical centerlines of the Mini LED as the basis for dividing the light-emitting units, and arranges four rectangular light-emitting units 100 in a 2*2 arrangement. The four rectangular light-emitting units 100 are connected by three offset long strips of bridging electrodes. The first bridging electrode B1 and the third bridging electrode B3 are located between the first electrode E1 and the second electrode E2, parallel to the long sides of the first electrode E1 and the second electrode E2. The first bridging electrode B1 is used to connect the first light-emitting unit 101 and the second light-emitting unit 102, and the third bridging electrode B3 is used to connect the third light-emitting unit 103 and the fourth light-emitting unit 104. The long second bridging electrode B2 is located at the bottom of the layout, parallel to the short sides of the first and second electrodes E1 and E2, and is used to connect the second light-emitting unit 102 and the third light-emitting unit 103. This layout design reduces the number of bridging electrodes, increases the size of the gap, the area of ​​the first electrode E1, and the area of ​​the second electrode E2. The layout is simple and has good bilateral symmetry, which can increase the offset tolerance of the die bonding and improve the thrust of the LED. The design value of the corresponding P-electrode and N-electrode on the BP is 311μm*138.5μm, and the design value of the gap between the P-electrode and N-electrode on the backplane (BP) is 154μm.

[0195] As shown in Figures 12 and 13, the light-emitting device can be a 12V high-voltage Mini LED. The device's dimensions are 381μm by 381μm, the gap 80's dimension G is 134μm, and the dimensions of the first electrode E1 and the second electrode E2 are both 271μm by 98.5μm. This layout uses the Mini LED's horizontal and vertical centerlines as the dividing lines for the light-emitting units, arranging four rectangular light-emitting units 100 in a 2x2 array. The four rectangular light-emitting units 100 are connected by two L-shaped bridge electrodes and one offset elongated bridge electrode. The first and third bridge electrodes B1 and B3, two L-shaped bridge electrodes, are located between the first and second electrodes E1 and E2, slightly above the LED, with their openings facing outward. The first bridge electrode B1 connects the first and second light-emitting units 101 and 102, while the third bridge electrode B3 connects the third and fourth light-emitting units 103 and 104. The offset, long strip-shaped third bridging electrode B3 is located at the bottom of the layout, parallel to the short sides of the first and second electrodes E1 and E2, and is used to connect the second light-emitting unit 102 and the third light-emitting unit 103. This layout design increases the size of the gap, the area of ​​the first electrode E1, and the area of ​​the second electrode E2 by folding the bridging electrode inward. The advantage is that the offset tolerance and thrust of the die bonding are better. However, this layout is relatively complex and not very symmetrical, suitable for scenarios with relatively loose requirements on light shape symmetry. The design values ​​of the P and N electrodes on the backplane (BP) are 311μm*138.5μm, and the design value of the gap between the P and N electrodes on the backplane (BP) is 154μm.

[0196] As shown in Figures 14 and 15, the light-emitting device can be a 12V high-voltage Mini LED. Its dimensions are 375μm by 375μm, the gap 80 has a dimension G of 130μm, and the dimensions of the first electrode E1 and the second electrode E2 are 339μm by 104.5μm. This layout uses the horizontal and vertical centerlines of the Mini LED as the dividing lines for the light-emitting units, arranging four rectangular light-emitting units 100 in a 2x2 array. The four rectangular light-emitting units 100 are connected by two L-shaped bridge electrodes and one Z-shaped bridge electrode. Each of the two L-shaped bridge electrodes, the second bridge electrode B2 and the third bridge electrode B3, spans two light-emitting units 100. The second bridge electrode B2 connects the second light-emitting unit 102 and the third light-emitting unit 103, while the third bridge electrode B3 connects the third light-emitting unit 103 and the fourth light-emitting unit 104. The connecting electrode B6, an L-shaped connecting electrode B0, is located only within the fourth light-emitting unit 104. The connecting electrode B6 is located within the first light-emitting unit 101. The first bridging electrode B1 is used to connect the first light-emitting unit 101 and the second light-emitting unit 102. The orthographic projection of the Z-shaped first bridging electrode B1 on the substrate BS overlaps with the orthographic projection of the first electrode E1 on the substrate BS, spanning the first light-emitting unit 101 and the second light-emitting unit 102. The portion of the first bridging electrode B1 located within the first light-emitting unit 101 is L-shaped with its opening facing the upper left corner. The portion of the first bridging electrode B1 located within the second light-emitting unit 102 is located at the edge, forming a straight line parallel to the long sides of the first and second electrodes E1 and E2. This layout design further increases the area of ​​the first and second electrodes E1 and E2 by folding the bridging electrode inward, making it suitable for scenarios with high thrust requirements and low light shape symmetry requirements. The design values ​​of the P and N electrodes on the backplane (BP) are 379μm*144.5μm, and the design value of the gap between the P and N electrodes on the backplane (BP) is 150μm.

[0197] As shown in Figures 15 and 17, the light-emitting device can be a 12V high-voltage Mini LED. The outer dimensions of the light-emitting device are 375μm*375μm, the dimension G of the gap 80 is 130μm, and the dimensions of the first electrode E1 and the second electrode E2 are both 339*104.5μm. This layout uses the horizontal centerline and vertical centerline of the Mini LED as the basis for dividing the light-emitting units, and arranges four rectangular light-emitting units 100 in a 2*2 array. The four rectangular light-emitting units 100 are connected by an L-shaped bridge electrode, a Z-shaped bridge electrode, and a C-shaped bridge electrode. The L-shaped first bridge electrode B1 spans two light-emitting units 100 and is used to connect the first light-emitting unit 101 and the second light-emitting unit 102. The L-shaped connecting electrode B0 is only located in the first light-emitting unit 101. For example, the connecting electrode B0 is connected to the first electrode E1. The orthographic projection of the Z-shaped third bridging electrode B3 on substrate BS overlaps with the orthographic projection of the second electrode E2 on substrate BS, spanning the third light-emitting unit 103 and the fourth light-emitting unit 104. The portion of the third bridging electrode B3 located within the fourth light-emitting unit 104 comprises an L-shape with its opening facing the upper right corner. The portion of the third bridging electrode B3 located within the third light-emitting unit 103 is located at the edge, forming a straight line parallel to the long sides of the first and second electrodes E1 and E2. The C-shaped second bridging electrode B2 passes through the intersection of the horizontal and vertical centerlines, located at the lower edge of the second light-emitting unit 102 and on the left side of the third light-emitting unit 103. By designing the bridging electrode to cross the intersection, this layout increases the current spreading effect and reduces the light blocking effect of the bridging electrode, resulting in higher light efficiency. The corresponding design values ​​for the P and N electrodes on the backplane (BP) are 379μm*144.5μm, and the design value for the gap between the P and N electrodes on the backplane (BP) is 150μm.

[0198] As shown in Figures 23 and 24, the light-emitting device can be a 12V high-voltage Mini LED. The outer dimensions of the light-emitting device are 375μm*375μm, the size G of the gap 80 is 130μm, and the dimensions of the first electrode E1 and the second electrode E2 are 339μm*104.5μm. The layout uses the left diagonal and right diagonal of the Mini LED as the dividing reference for the light-emitting unit. The light-emitting unit 100 is four triangles, arranged in a circular manner of 1:1:1:1. The four triangular light-emitting units 100 are connected by two L-shaped plus arc-shaped bridging electrodes and one Y-shaped plus arc-shaped bridging electrode. The L-shaped plus arc-shaped first bridging electrode B1 in the upper left corner spans the first light-emitting unit 101 and the second light-emitting unit 102, and is used to connect the first light-emitting unit 101 and the second light-emitting unit 102. The L-shaped and arc-shaped third bridging electrode B3 in the lower right corner spans the third light-emitting unit 103 and the fourth light-emitting unit 104, and is used to connect the third light-emitting unit 103 and the fourth light-emitting unit 104. The Y-shaped and arc-shaped second bridging electrode B2 spans the second light-emitting unit 102 and the third light-emitting unit 103, and is used to connect the second light-emitting unit 102 and the third light-emitting unit 103. This layout increases the current expansion effect through the design of the Y-shaped and arc-shaped bridging electrode (second bridging electrode B2) in the middle, and the symmetry of the light shape is better. However, because the bridging electrode blocks more light, the light efficiency is slightly lower. The design value of the P electrode and N electrode on the corresponding backplane (BP) is 379μm*144.5μm, and the design value of the gap between the P electrode and the N electrode on the corresponding backplane (BP) is 150μm.

[0199] As shown in Figures 30 and 31, the light-emitting device can be a 12V high-voltage Mini LED. The outer dimensions of the light-emitting device are 375μm*375μm, the dimension G of the gap 80 is 130μm, and the dimensions of the first electrode E1 and the second electrode E2 are 325μm*97.5μm. This layout uses the 1 / 4 horizontal line of the Mini LED as the basis for dividing the light-emitting units. The light-emitting units 100 are four rectangles arranged in a 1*4 pattern. The four rectangular light-emitting units 100 are connected by three Z-shaped bridge electrodes. The two Z-shaped bridge electrodes, the first bridge electrode B1 and the third bridge electrode B3, are located on the left side of the LED. The first bridge electrode B1 is used to connect the first light-emitting unit 101 and the second light-emitting unit 102, and the third bridge electrode B3 is used to connect the third light-emitting unit 103 and the fourth light-emitting unit 104. The second Z-shaped bridge electrode B2 on the right side connects the second light-emitting unit 102 and the third light-emitting unit 103. The layout design is simple, the process is simple, and there is less light blocking, but the light shape symmetry and current expansion are poor. The design value of the P electrode and N electrode on the backplane (BP) is 365μm*117.5μm, and the design value of the gap between the P electrode and N electrode on the backplane (BP) is 150μm.

[0200] The first electrodes E1 and the second electrodes E2 in Figures 28, 29, and 31 are arranged along direction Y, while the first electrodes E1 and the second electrodes E2 in Figure 32 are arranged along direction X. The layout shown in Figure 30 is more suitable for the arrangement of the first electrodes E1 and the second electrodes E2 shown in Figure 31. The arrangement of the bridging electrodes in the light-emitting device shown in Figure 32 may differ from that shown in Figure 30 to avoid electrical problems.

[0201] In the embodiment of the present disclosure, the outer dimensions of the light emitting device may be the same as the dimensions of the substrate BS.

[0202] In the light-emitting device provided by the embodiment of the present disclosure, as shown in Figures 11, 13, 14, 17 and 23, the first electrode E1 is connected to the connection electrode B0 through the via hole V1, and the second electrode E2 is connected to the connection electrode B6 through the via hole V2.

[0203] As shown in FIG. 23 , the first electrode E1 is further connected to the connection electrode B0 through a via hole V3 .

[0204] The structure of the light emitting device is described below with reference to FIG. 35 to FIG. 37 .

[0205] The internal structure of the light-emitting device provided by the embodiment of the present disclosure may be as shown in Figures 35 to 37.

[0206] The light-emitting device provided by the embodiments of the present disclosure may be a high-voltage Mini LED with a small aspect ratio and an outer dimension of 380*380±30μm, which is a 15*15mil-12V high-voltage LED chip.

[0207] As shown in Figures 35 to 37, the light-emitting device includes a substrate BS, a buffer layer BF located on the substrate BS, an N-type layer NL located on the buffer layer BF, a superlattice layer SL located on the N-type layer NL, an N-type layer 90 located on the superlattice layer SL, a multiple quantum well layer (Multiple Quantum Well) MQW located on the N-type layer 90, an electron blocking layer (Electron Blocking Layer) EBL located on the multiple quantum well layer MQW, a P-type layer PL located on the electron blocking layer EBL, and a current spreading layer (Current Spreading Layer) CSL located on the P-type layer PL. A conductive pattern layer is provided on the current spreading layer CSL. The conductive pattern layer includes a connecting electrode B0, a connecting electrode B6, and a bridging electrode BD. The bridging electrode BD is located on the passivation layer PVX1.

[0208] As shown in Figure 35, a passivation layer PVX2 is provided on the conductive pattern layer. This passivation layer PVX2 also functions as a distributed Bragg reflector (DBR). An electrode layer is provided on the passivation layer PVX2, comprising a first electrode E1 and a second electrode E2. This structure is suitable for LEDs with normal angles and, when combined with the various layout designs described above, is suitable for products with high optical density (OD) and small pitch.

[0209] As shown in Figures 36 and 37, a passivation layer PVX2 is provided on the conductive pattern layer, and a passivation layer PVX3 is provided on the passivation layer PVX2. The passivation layer PVX3 can also serve as a cloth Bragg reflector DBR1. An electrode layer is provided on the passivation layer PVX3, and the electrode layer includes a first electrode E1 and a second electrode E2.

[0210] For example, the substrate BS may include a sapphire substrate, but is not limited thereto. The substrate BS may be a patterned sapphire substrate (PSS).

[0211] For example, the N-type layer NL includes an N-type semiconductor, and the material of the N-type semiconductor includes, but is not limited to, N-GaN.

[0212] For example, the P-type layer PL includes a P-type semiconductor, and the material of the P-type semiconductor includes, but is not limited to, P-GaN.

[0213] Figure 36 shows a high-reliability 12V high-voltage Mini LED with an ALD protective layer. In the light-emitting device shown in Figure 36, during the PECVD process to fabricate the passivation layer PVX2, due to process limitations, the passivation layer PVX2, acting as an insulating layer, may develop tiny cracks. In high humidity and with electricity flowing, metal ions on the internal electrode, such as Au ions, are less likely to combine with OH- ions. They are attracted to the negative potential and travel from the internal electrode along the Bragg reflector (DBR) to the external electrode. This creates a conductive path between the internal and external electrodes, leading to leakage current, which can cause the LED to dim or turn off. In the embodiments disclosed herein, leakage current refers to conduction at non-conducting locations, creating a short circuit. To address this LED dimming or off issue, a passivation layer PVX2 can be added between the passivation layer PVX1 and the outermost passivation layer, building on the structure of Figure 35. This creates a three-passivation layer PVX structure consisting of passivation layer PVX1, passivation layer PVX2, and passivation layer PVX3 (Bragg reflector DBR). For example, the passivation layer PVX2 shown in Figure 36 is made of silicon dioxide and can be fabricated using an atomic layer deposition (ALD) machine. It is located between the internal electrode and the external electrode, isolating them and preventing short circuits caused by metal ion migration from the electrodes, thereby improving the reliability of the light-emitting device. In the embodiments of the present disclosure, an internal electrode refers to a conductive portion covered by an insulating layer, for example, an internal electrode refers to a bridging electrode; an external electrode refers to the first electrode E1 or the second electrode E2.

[0214] Figure 37 shows a wide-angle 12V high-voltage Mini LED structure. Compared to the structure of the light-emitting device shown in Figure 36, it features a Bragg reflector film layer DBR2 on the side of the substrate BS where the light-emitting unit is not located. For example, the Bragg reflector film layer DBR2 is a stacked structure of silicon dioxide and titanium dioxide. By varying the film system design, the LED's light distribution curve can be adjusted. The light-emitting devices shown in Figures 35 and 36 emit a light pattern that approximates a Lambertian body, with a 50% light decay angle of approximately 140°. The high-voltage Mini LED corresponding to the light-emitting device shown in Figure 37 emits a wing-shaped light pattern with a 50% light decay angle of approximately 155-165°. This wide-angle LED structure, when combined with different layout designs, is suitable for products with smaller ODs and larger pitches.

[0215] It should be noted that the structure of each film layer in the light-emitting unit is not limited to that shown in the figure and can be adjusted as needed.

[0216] Embodiments of the present disclosure also provide a light-emitting substrate, including any of the aforementioned light-emitting devices. As shown in FIG38 , the light-emitting substrate 916 includes a driving substrate 912 and a light-emitting device 66. Electrodes 901 and 902 are provided on the light-emitting substrate 916. The first electrode E1 of the light-emitting device 66 is connected to the electrode 901, and the second electrode E2 of the light-emitting device 66 is connected to the electrode 902. One of the electrodes 901 and 902 is a P electrode in the driving substrate 912, and the other of the electrodes 901 and 902 is an N electrode in the driving substrate 912. For example, the driving substrate 912 may be a glass substrate, but is not limited thereto. The driving substrate 912 may also be a PCB.

[0217] For example, the drive substrate 912 may include an organic resin material such as epoxy resin, triazine, silicone resin, or polyimide. In some example embodiments, the drive substrate 912 may be an FR4 type printed circuit board (PCB), or may be a flexible PCB that is easily deformed. In some example embodiments, the drive substrate 912 may include a ceramic material such as silicon nitride, AlN, or Al2O3, or a metal or metal compound, and the drive substrate 912 may be a metal core printed circuit board (MCPCB) or a metal copper clad laminate (MCCL).

[0218] The embodiment of the present disclosure further provides a backlight module, comprising any of the above-mentioned light-emitting substrates. The light-emitting substrate 916 can be used as a backlight module for application in a liquid crystal display device.

[0219] The embodiment of the present disclosure further provides a display device including any of the above-mentioned backlight modules. As shown in FIG39 , a display device 918 includes a display panel 917 and a light-emitting substrate 916 serving as a backlight module.

[0220] The light-emitting device, light-emitting substrate, backlight module, and display device provided by the embodiments of the present disclosure can realize a low-cost glass-based Mini LED backlight solution with a small aspect ratio and high-voltage Mini LED. Unlike existing 6V high-voltage Mini LEDs, the light-emitting device, light-emitting substrate, backlight module, and display device provided by the embodiments of the present disclosure can be a 12V high-voltage Mini LED with an aspect ratio of (1-1.18):1, and can have a different layout design and different structural design than conventional Mini LEDs. Through corresponding processes, high-performance, low-cost Mini LED backlight products based on this high-voltage Mini LED can be produced.

[0221] The embodiment of the present disclosure realizes the first electrode E1 and the second electrode E2 with larger areas by adjusting the layout of the light-emitting device.

[0222] The embodiments of the present disclosure achieve at least one of the performances of preventing top damage and increasing the opening angle by adjusting the structure of the light-emitting device.

[0223] The disclosed embodiments can significantly improve the cost-effectiveness of Mini LED backlight products, enabling COG-based Mini LEDs to possess technical advantages while overcoming the higher cost disadvantage of PCBs. This plays a significant role in promoting COG-based Mini LED backlight products to seize the leading position in the Mini LED industry and can be widely used in a full range of Mini LED backlight products, including commercial displays, TVs, MNTs, notebook computers, automotive, and VR.

[0224] The light-emitting device, light-emitting substrate, backlight module and display device provided by the embodiments of the present disclosure have at least one of the following beneficial technical effects.

[0225] (1) By increasing the driving voltage of Mini LED, while achieving the peak brightness requirement of the module, the design requirement for the thickness of the wiring (Cu thickness) on the glass substrate is reduced, and a single-layer wiring can meet the requirement. For example, the double Cu wiring requirement on the BP can be simplified to a single Cu, and the mask process of the BP can be simplified from 6 mask processes to 2 mask processes. By simplifying the wiring thickness (Cu thickness) and mask process, the production cost of BP is reduced, thereby improving the cost performance of COG-based Mini LED backlight products. According to evaluations, the combination of 12V high-voltage Mini LED and high-voltage integrated circuit (IC) can achieve a cost reduction of $50 under the 1K partitioning solution compared to the current 6V high-voltage Mini LED solution.

[0226] (2) Through high-voltage design, the current used by Mini LEDs is reduced, so that when the backlight module is working normally, the current used by Mini LEDs is closer to the optimal efficiency point of LEDs, thereby improving the photoelectric conversion efficiency of LEDs and reducing the loss of device light efficiency. At the same time, it can reduce heating problems and reduce the power consumption of the light board (backlight module), thereby increasing the service life of the light board.

[0227] (3) By designing the LED into a square shape, the aspect ratio is reduced from (1.8-3.3):1 to the optimal (1-1.18):1, avoiding the problem of die rotation caused by the large aspect ratio and improving the production yield of Mini LED backlight related products.

[0228] (4) By increasing the external dimensions of the LED and the size of the P-electrode and N-electrode of the LED, the bump thickness is designed to be 8μm, and the solder volume of the bump is increased, thereby avoiding the problem of solid crystal rotation caused by insufficient solder on the LED and insufficient pull-back of the chip during the welding process, further improving the production yield of the backlight module and further reducing the production cost of COG-based Mini LED backlight.

[0229] (5) Through the design of different layouts and structures, the specific brightness, power consumption, quality, anti-static (ESD) and reliability requirements of different types of COG-based Mini LED products are met.

[0230] (6) Through the structural design of multiple light-emitting units connected in series, one LED is equivalent to integrating four LEDs, simplifying the traditional one-zone four-lamp design to a one-zone one-lamp design. Under the same zoning design, reducing the total number of LEDs on the backlight module can not only reduce the raw material cost (Bill of Material, BOM), but also reduce the time for die bonding, improve the first-time yield of die bonding, reduce the proportion of rework, and improve production efficiency.

[0231] (7) The use of 12V high-voltage Mini LEDs composed of multiple light-emitting units in series can reduce the current used and the Cu thickness requirement, solving the problem that some models of COG-based Mini LED products cannot be designed and developed due to the excessive thickness of the Cu traces on the BP.

[0232] (8) Through the design of different bump materials and different optical film layers, the design requirements of Mini LED products with different partitions, OD and pitch can be met, providing the possibility for the research and development and layout of diversified, multi-series and multi-mode product models.

[0233] For example, in some other embodiments, the above-mentioned Mini LED can also be replaced by Micro LED.

[0234] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A light emitting device, comprising: substrate; A plurality of light-emitting units are located on the substrate and connected in series; A first electrode connected to one end of the plurality of light-emitting units connected in series; A second electrode connected to the other end of the plurality of light-emitting units connected in series; as well as a bridging electrode connecting two light emitting units among the plurality of light emitting units, An orthographic projection of at least one of the first electrode and the second electrode on the substrate overlaps with an orthographic projection of at least two of the plurality of light emitting units on the substrate.

2. The light emitting device according to claim 1, wherein: The first electrode and the second electrode are spaced apart from each other, the first electrode and the second electrode are arranged along a first direction, each of the first electrode and the second electrode extends along a second direction, and the first direction intersects the second direction.

3. The light emitting device according to claim 2, wherein: The ratio of the maximum dimension of the substrate along the first direction to the maximum dimension of the substrate along the second direction is (1-1.18):

1.

4. The light emitting device according to claim 2, wherein: The ratio of the maximum dimension of the multiple light-emitting units along the first direction to the maximum dimension of the multiple light-emitting units along the second direction is (1-1.18):

1.

5. The light emitting device according to any one of claims 2 to 4, wherein: A ratio of a maximum dimension of each of the first electrode and the second electrode along the first direction to a maximum dimension of the plurality of light emitting units along the first direction is greater than 19%.

6. The light emitting device according to claim 5, wherein: A ratio of a maximum dimension of each of the first electrode and the second electrode along the first direction to a maximum dimension of the plurality of light emitting units along the first direction is less than or equal to 26%.

7. The light emitting device according to any one of claims 2 to 6, wherein: A gap is provided between the first electrode and the second electrode, and a ratio of a minimum dimension of the gap along the first direction to a maximum dimension of the plurality of light emitting units along the first direction is greater than or equal to 30% and less than or equal to 35%.

8. The light emitting device according to any one of claims 2 to 7, wherein: The plurality of light emitting units include a first light emitting unit, a second light emitting unit, a third light emitting unit, and a fourth light emitting unit, and the bridge electrode includes a first bridge electrode, a second bridge electrode, and a third bridge electrode.

9. The light emitting device according to claim 8, wherein: The first light emitting unit and the second light emitting unit are connected via the first bridge electrode, the second light emitting unit and the third light emitting unit are connected via the second bridge electrode, and the third light emitting unit and the fourth light emitting unit are connected via the third bridge electrode.

10. The light emitting device according to claim 9, wherein: The first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit are respectively located in four areas divided by two center lines of the substrate, the first light-emitting unit and the second light-emitting unit are arranged along the second direction, the third light-emitting unit and the fourth light-emitting unit are arranged along the second direction, the first light-emitting unit and the fourth light-emitting unit are arranged along the first direction, and the second light-emitting unit and the third light-emitting unit are arranged along the first direction.

11. The light emitting device according to claim 10, wherein: At least a portion of the first bridging electrode and at least a portion of the third bridging electrode are located between the first electrode and the second electrode, and the second bridging electrode extends along the first direction and is located on one side where the short sides of the first electrode and the second electrode are located.

12. The light emitting device according to claim 11, wherein: Each of the first bridge electrode and the third bridge electrode extends along the second direction, and an orthographic projection of each of the first bridge electrode and the third bridge electrode on the substrate does not overlap with an orthographic projection of the first electrode and the second electrode on the substrate.

13. The light emitting device according to claim 11, wherein: Each of the first bridging electrode and the third bridging electrode includes a first portion extending along the first direction and a second portion extending along the second direction, the orthographic projections of the first portion of the first bridging electrode and the first portion of the third bridging electrode on the substrate overlap with the orthographic projections of the first electrode and the second electrode on the substrate respectively, the orthographic projection of the second portion of the first bridging electrode on the substrate does not overlap with the orthographic projection of the first electrode on the substrate, and the orthographic projection of the second portion of the third bridging electrode on the substrate does not overlap with the orthographic projection of the second electrode on the substrate.

14. The light emitting device according to any one of claims 9 to 12, wherein: The bridging electrode further includes a fourth bridging electrode and a fifth bridging electrode, the first light emitting unit and the second light emitting unit are further connected via the fourth bridging electrode, and the third light emitting unit and the fourth light emitting unit are further connected via the fifth bridging electrode. The fourth bridge electrode and the first bridge electrode are located on both sides of the first electrode, and the fifth bridge electrode and the second bridge electrode are located on both sides of the second electrode.

15. The light emitting device according to claim 9, wherein: The first bridging electrode is in a Z shape, the second bridging electrode is in an L shape, and the third bridging electrode is in an L shape.

16. The light emitting device according to claim 9, wherein: The first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit are respectively located in four areas divided by two center lines of the substrate, the first light-emitting unit and the second light-emitting unit are arranged along the second direction, the third light-emitting unit and the fourth light-emitting unit are arranged along the second direction, the first light-emitting unit and the third light-emitting unit are arranged along the first direction, the second light-emitting unit and the fourth light-emitting unit are arranged along the first direction, and the second bridging electrode includes an inclined portion, the inclined portion is inclined relative to the first direction, and is inclined relative to the second direction.

17. The light emitting device according to claim 16, wherein: The third bridging electrode has a middle portion extending along the first direction and portions located at both sides of the middle portion and extending along the second direction.

18. The light emitting device according to any one of claims 15 to 17, wherein: The bridging electrode also includes a first connecting electrode and a second connecting electrode, wherein the orthographic projection of the first connecting electrode on the substrate is located within the orthographic projection of the first light emitting unit on the substrate, and the orthographic projection of the second connecting electrode on the substrate is located within the orthographic projection of the fourth light emitting unit on the substrate.

19. The light emitting device according to any one of claims 15 to 18, wherein: The second bridge electrode has an opening, and the opening of the second bridge electrode faces the first light emitting unit.

20. The light emitting device according to claim 9, wherein: The first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit are respectively located in four areas divided by two diagonal lines of a rectangle, the first light-emitting unit and the fourth light-emitting unit are arranged along the first direction, the second light-emitting unit and the third light-emitting unit are arranged along the second direction, and the second bridging electrode passes through the intersection of the two diagonal lines.

21. The light emitting device according to claim 20, wherein: At least one of the first bridge electrode, the second bridge electrode, and the third bridge electrode has a bent portion.

22. The light emitting device according to claim 9, wherein: The first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit are arranged along the second direction, the first bridging electrode and the second bridging electrode are respectively arranged on both sides of the second light-emitting unit in the first direction, and the second bridging electrode and the third bridging electrode are respectively arranged on both sides of the third light-emitting unit in the first direction.

23. The light emitting device according to claim 22, wherein: At least one of the first bridge electrode, the second bridge electrode, and the third bridge electrode is in a Z-shape.

24. The light emitting device according to any one of claims 1 to 23, wherein: A thickness of each of the first electrode and the second electrode is greater than or equal to 8 μm.

25. The light emitting device according to claim 24, wherein: A thickness of each of the first electrode and the second electrode is less than or equal to 15 μm.

26. The light emitting device according to any one of claims 1 to 23, wherein: Each of the first electrode and the second electrode includes a first electrode portion and a second electrode portion which are stacked.

27. The light emitting device according to claim 26, wherein: A material of the second electrode portion includes solder, and materials of the first electrode portion and the second electrode portion are different.

28. The light emitting device according to any one of claims 9 to 27, further comprising an anti-scarring structure, wherein: The anti-top-injury structure is located in an area surrounded by the first light-emitting unit, the second light-emitting unit, the third light-emitting unit, and the fourth light-emitting unit, and no conductive structure is arranged in the area where the anti-top-injury structure is located.

29. The light emitting device according to any one of claims 1 to 28, further comprising a first passivation layer, a second passivation layer, and a third passivation layer, wherein: The bridging electrode is located on the first passivation layer, the second passivation layer is located on the bridging electrode, the third passivation layer is located on the second passivation layer, and the third passivation layer also serves as a Bragg reflector.

30. The light emitting device according to any one of claims 1 to 28, further comprising a Bragg reflector film layer, wherein: The Bragg reflector film layer is located on a side of the substrate where the plurality of light emitting units are not disposed.

31. A light-emitting substrate, comprising the light-emitting device according to any one of claims 1-30.

32. A backlight module comprising the light-emitting substrate according to claim 31.

33. A display device comprising the backlight module according to claim 32.

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