Liquid crystal display and method of manufacturing the same

Abstract

A liquid crystal display comprises a first substrate, a plurality of first thin film transistors, a second substrate, a plurality of second thin film transistors, a plurality of sensing units and a liquid crystal layer. The plurality of first thin film transistors are disposed on the first substrate. The second substrate is arranged opposite to the first substrate. The plurality of second thin film transistors are disposed on the second substrate. The plurality of sensing units are arranged on the second substrate, and at least one of the plurality of sensing units is electrically connected to at least one of the plurality of second thin film transistors. The liquid crystal layer is arranged between the first substrate and the second substrate.

Description

[0001] This invention is a divisional application of the invention with application number 202010099316.6, application date February 18, 2020, and invention name “Liquid Crystal Display and Manufacturing Method Thereof”. Technical Field

[0002] The present invention relates to a liquid crystal display, and more particularly to a liquid crystal display having opposite substrates, wherein the opposite substrates have thin film transistors thereon. Background Art

[0003] Electronic products with display panels, such as smartphones, tablets, laptops, monitors and TVs, have become an indispensable necessity in modern society. With the booming development of such portable electronic products, consumers have high expectations for the quality, functions and prices of these products. These electronic products usually have communication functions. Specifically, liquid crystal displays can control the rotation direction of liquid crystal molecules used for display.

[0004] However, there are some difficulties in using a liquid crystal display. Therefore, a new liquid crystal display with improved display quality is needed. Summary of the invention

[0005] According to some embodiments of the present application, a liquid crystal display is provided, comprising: a first substrate, a plurality of first thin film transistors, a second substrate, a plurality of second thin film transistors, a plurality of sensing units and a liquid crystal layer. The plurality of first thin film transistors are arranged on the first substrate. The second substrate is arranged relative to the first substrate. The plurality of second thin film transistors are arranged on the second substrate. The plurality of sensing units are arranged on the second substrate, and at least one of the plurality of sensing units is electrically connected to at least one of the plurality of second thin film transistors. The liquid crystal layer is arranged between the first substrate and the second substrate.

[0006] According to some embodiments of the present application, a method for manufacturing a liquid crystal display is provided, comprising: providing a first substrate, forming a plurality of first thin film transistors on the first substrate, providing a second substrate, forming a plurality of second thin film transistors on the second substrate, forming a plurality of sensing units on the second substrate, wherein at least one of the plurality of sensing units is electrically connected to at least one of the plurality of second thin film transistors, and combining the first substrate and the second substrate.

[0007] According to some embodiments of the present application, a liquid crystal display is provided, comprising: a first substrate; a plurality of first thin film transistors arranged on the first substrate; a second substrate overlapping the first substrate; a plurality of second thin film transistors arranged on the second substrate; a passivation layer arranged between the first substrate and the second substrate; a conductive via penetrating the passivation layer; a first electrode arranged between the first substrate and the second substrate and electrically connected to at least one of the plurality of first thin film transistors through the conductive via; a first shielding layer arranged between the plurality of second transistors and the second substrate; wherein the first shielding layer overlaps the conductive via and the plurality of first thin film transistors. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings, wherein:

[0009] Figure 1 A cross-sectional view showing a liquid crystal display according to some embodiments of the present application.

[0010] Figure 2 A cross-sectional view showing a liquid crystal display according to some embodiments of the present application.

[0011] Figure 3 A cross-sectional view showing a liquid crystal display according to some embodiments of the present application.

[0012] Figure 4A , Figure 4B and Figure 4C show Figure 3 A top view of a liquid crystal display is shown.

[0013] Figure 5 A cross-sectional view showing a liquid crystal display according to some embodiments of the present application.

[0014] Figure 6 A cross-sectional view showing a liquid crystal display according to some embodiments of the present application.

[0015] Figure 7 A cross-sectional view showing a liquid crystal display according to some embodiments of the present application.

[0016] Figure 8 A cross-sectional view showing a liquid crystal display according to some embodiments of the present application.

[0017] 9A to 9E Cross-sectional views showing different stages of a process for manufacturing a liquid crystal display according to some embodiments of the present application.

[0018] FIG. 10A to FIG. 10ECross-sectional views showing different stages of a process for manufacturing a liquid crystal display 400B according to some embodiments of the present application.

[0019] FIG. 11A to FIG. 11E Cross-sectional views showing different stages of a process for manufacturing a liquid crystal display 400C according to some embodiments of the present application.

[0020] Fig.12 A cross-sectional view showing a liquid crystal display according to some embodiments of the present application. DETAILED DESCRIPTION

[0021] The following is a detailed description of the liquid crystal display and the manufacturing method thereof for the embodiment of the present application. In the following detailed description, for the purpose of explanation, many specific details and embodiments are described to provide a clear understanding of the present application. However, it is clear that the exemplary embodiments described herein are only for the purpose of illustration, and the concepts of the present application can be embodied in various forms without being limited to those exemplary embodiments. In addition, the drawings of different embodiments can use similar and / or corresponding reference numerals to indicate similar and / or corresponding elements. However, the use of these similar and / or corresponding reference numerals is only for the purpose of simply and clearly describing some embodiments of the present application, and does not represent any relevance between the different embodiments and / or structures discussed. In addition, in this article, for example, the description of "a first material layer disposed above / on / above the second material layer" may refer to the first material layer being in direct contact with the second material layer, or may refer to the first material layer not being in contact with the second material layer, and there are one or more intermediate layers between the first material layer and the second material layer. In the aforementioned case, the first material layer may not be in direct contact with the second material layer.

[0022] In addition, relative terms such as "higher" or "lower" may be used herein to describe the relative relationship of one element to another element. It is understood that if the device herein is turned upside down, the element described on the "lower" side will become the element on the "higher" side.

[0023] It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers, parts and / or sections, these elements, components, regions, layers, parts and / or sections should not be limited by these terms. These terms are only used to distinguish different elements, components, regions, layers, parts or sections. Therefore, a first element, component, region, layer, part or section discussed below may be referred to as a second element, component, region, layer, part or section without departing from the teachings of the present application.

[0024] It should be understood that the exemplary embodiments of the present application can be used in conjunction with the attached Figure 1It is understood that the drawings of the present application are also considered to be part of the complete description of the disclosure. The drawings of the present application are not drawn to scale. In addition, the structures and devices are shown schematically to simplify the drawings. In the drawings, some elements may be omitted for clarity. In addition, some elements in the drawings may be removed to serve as another embodiment of the present application.

[0025] In this document, the terms "about" and "substantially" generally mean within + / -20% of a given value, more generally within + / -10% of a given value, more generally within + / -5% of a given value, more generally within 3% of a given value, more generally within + / -2% of a given value, more generally within + / -1% of a given value, and even more generally within + / -0.5% of a given value. The numerical values ​​given in this application are approximate numerical values, that is, in the absence of a specific description of "about" or "substantially", a given value may still imply the meaning of "about" or "substantially". In addition, when considering deviations or changes in the manufacturing process, the term "same" may also include the meaning of "approximately" or "substantially".

[0026] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings as those commonly understood by those skilled in the art. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having meanings consistent with the background or context of the relevant technology and the present application, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present application.

[0027] In addition, in some embodiments of the present application, terms related to bonding and connection, such as "connection", "interconnection", etc., unless otherwise defined, may refer to two structures being in direct contact, or may also refer to two structures not being in direct contact, wherein there is another structure disposed between the two structures, and such terms related to bonding and connection may also include situations where both structures are movable, or where both structures are fixed.

[0028] In addition, the phrase "a range is between a first value and a second value" or "a range is from a first value to a second value" means that the range includes the first value, the second value, and other values ​​therebetween.

[0029] Furthermore, the term “covering” includes the meaning of “partially covering” or “completely covering”.

[0030] Please refer to Figure 1 , Figure 1A cross-sectional view of a liquid crystal display 100A according to some embodiments of the present application is shown. The liquid crystal display 100A may include a first substrate 102. The first substrate 102 may include a glass substrate, a ceramic substrate, a polymer substrate, other suitable substrates or a combination thereof. A buffer layer 104 may be disposed on the first substrate 102. The buffer layer 104 may include multiple layers having different materials. A gate dielectric layer 106 may be disposed on the buffer layer 104. The material of the gate dielectric layer 106 may include silicon oxide (SiO x ), Silicon Nitride (SiN y ), high dielectric constant (high-k) dielectric materials or other suitable dielectric materials, but are not limited thereto.

[0031] like Figure 1 As shown, the liquid crystal display 100A may include a plurality of first thin film transistors 108. The first thin film transistor 108 may include a gate electrode 110, a source electrode 112, a drain electrode 114, and a semiconductor layer 116. The gate electrode 110 may be disposed on the buffer layer 104. In some embodiments, the thin film transistor in the present application may include a top gate thin film transistor, a bottom gate thin film transistor, a dual gate thin film transistor, a double gate thin film transistor, other suitable transistors or combinations thereof.

[0032] The material of the gate electrode 110 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), or titanium (Ti).

[0033] The source 112, the drain 114 and the semiconductor layer 116 may be disposed on the gate dielectric layer 106. In some embodiments, the material of the semiconductor layer 116 of the first thin film transistor 108 may include amorphous silicon, polycrystalline silicon such as low-temp polysilicon (LTPS), metal oxide or other suitable materials, but is not limited thereto. The aforementioned metal oxide may include indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tin oxide (IGZTO), low temperature polycrystalline oxide (LTPO), other suitable materials or combinations thereof. In some embodiments, the material of the source 112 and the drain 114 may include a metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt) or titanium (Ti).

[0034] like Figure 1 As shown, the liquid crystal display 100 may include a pad or contact (not shown) electrically connected to the source 112 and / or the drain 114. The pad or contact can be used to electrically connect the first thin film transistor 108 to other electronic components (not shown). The liquid crystal display 100 may include a dielectric layer 120 disposed on the gate dielectric layer 106. The material of the dielectric layer 120 may include phospho-silicon glass (PSG), boron-doped phospho-silicon glass (BPSG), a low dielectric constant (low-k) material and / or other suitable materials. The aforementioned low dielectric constant dielectric material may include fluorosilicon glass (FSG), silicon oxide, silicon nitride, amorphous fluorinated carbon, parylene, bis-benzocyclobutenes (BCB), polyimide or other suitable materials, but is not limited thereto. Although not shown, some metal lines or vias may be formed in the dielectric layer 120 .

[0035] like Figure 1As shown, the liquid crystal display 100 may include a second substrate 122 disposed opposite to the first substrate 102. The second substrate 122 may include a glass substrate, a ceramic substrate, a polymer substrate, other suitable substrates or a combination thereof. A buffer layer 124 may be disposed on the second substrate 122. The buffer layer 124 may include multiple layers having different materials. A shielding layer 126 may be disposed on the second substrate 122 and / or in the buffer layer 124. In some embodiments, the shielding layer 126 may be a light shielding layer that allows light of a specific wavelength or a portion of light to pass through. It should be understood that although Figure 1 The gate electrode 136 is shown in direct contact with the shielding layer 126 , but some additional layers may be disposed between the gate electrode 136 and the shielding layer 126 .

[0036] The gate dielectric layer 128 is disposed on the buffer layer 124. The material of the gate dielectric layer 128 may be the same or similar to that of the gate dielectric layer 106, and therefore will not be described in detail herein. The dielectric layer 130 and the dielectric layer 132 may be disposed on the gate dielectric layer 128. The dielectric layer 130 and the dielectric layer 132 may include phospho-silicon glass (PSG), boron-doped phospho-silicon glass (BPSG), fluorine silicon glass (FSG), silicon oxide, silicon nitride, amorphous fluorinated carbon, parylene, bis-benzocyclobutenes (BCB), polyimide, or other suitable materials, but are not limited thereto. Although not shown in the figure, some metal lines or vias may be formed in the dielectric layer 130 and / or the dielectric layer 132.

[0037] like Figure 1 As shown, the liquid crystal display 100A may include a second thin film transistor 134. It should be understood that Figure 1 Only one second thin film transistor 134 is shown. However, the liquid crystal display 100A may include more second thin film transistors 134 in other cross sections. The second thin film transistor 134 may include a gate electrode 136, a source electrode 138, a drain electrode 140, and a semiconductor layer 142. The material of the gate electrode 136 may include a metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), or titanium (Ti).

[0038] The source 138, the drain 140 and the semiconductor layer 142 may be disposed on the gate dielectric layer 128. In some embodiments, the material of the semiconductor layer 142 of the second thin film transistor 134 may include amorphous silicon, polycrystalline silicon such as low-temp polysilicon (LTPS), metal oxide or other suitable materials, but is not limited thereto. The aforementioned metal oxide may include indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tin oxide (IGZTO), low temperature polycrystalline oxide (LTPO), other suitable materials or combinations thereof. In some embodiments, the material of the source 138 and the drain 140 may include metal.

[0039] In an embodiment where the semiconductor layer is an indium gallium zinc oxide (IGZO) layer, the semiconductor layer may include different compositions of indium, gallium, zinc, and oxygen, for example, the ratio thereof may be 1:1:1:4 or other suitable compositions. In some embodiments, the material of the semiconductor layer of the first thin film transistor 108 is different from the material of the semiconductor layer of the second thin film transistor 134. For example, the material of the semiconductor layer of the first thin film transistor 108 may include low temperature polysilicon, and the material of the semiconductor layer of the second thin film transistor 134 may include IGZO. In other embodiments, the material of the semiconductor layer of the first thin film transistor 108 may include amorphous silicon, and the material of the semiconductor layer of the second thin film transistor 134 may include low temperature polysilicon.

[0040] In some embodiments, semiconductor layer 116 and semiconductor layer 142 each include a channel. The width and / or length of the channel of semiconductor layer 116 and the channel of semiconductor layer 142 may be different. In some embodiments, the width-to-length ratio of the channel of semiconductor layer 116 and the channel of semiconductor layer 142 may be different.

[0041] In some embodiments, the distance D1 between the first thin film transistor 108 and the second thin film transistor 134 is in the range of about 0.5 μm to 10 μm. More specifically, the distance D1 between the first thin film transistor 108 and the second thin film transistor 134 may refer to the minimum distance between the two semiconductor layers of the first thin film transistor 108 and the second thin film transistor 134 along the direction parallel to the normal line of the first substrate 102. For example, the distance D1 between the semiconductor layer 116 and the semiconductor layer 142 is in the range of about 0.5 μm to 10 μm. If the distance D1 between the first thin film transistor 108 and the second thin film transistor 134 is in the aforementioned range, the signal interference between the first thin film transistor 108 and the second thin film transistor 134 can be reduced.

[0042] In some embodiments, the shielding layer 126 may overlap with the semiconductor layer 142 of the second thin film transistor 134. In some embodiments, the shielding layer 126 may overlap with the channel of the second thin film transistor 134. The shielding layer 126 may be configured to reduce at least a portion of the light affecting the second thin film transistor 134, but is not limited thereto. The term "overlap" may include partial overlap or complete overlap in the normal direction of the second substrate 122. More specifically, the projection of the shielding layer 126 on the second substrate 122 may overlap with the projection of the semiconductor layer of the second thin film transistor 134 on the second substrate 122.

[0043] like Figure 1 As shown, the liquid crystal display 100A may include a pad or contact (not shown) electrically connected to the source 138 and the drain 140. The pad or contact may be used to electrically connect the second thin film transistor 134 to other electronic components (not shown). The liquid crystal display 100A may also include an electrode 146, which electrically connects the second thin film transistor 134 to the sensing unit 148. The material of the pad and the electrode 146 may include a metal. Although not shown, two or more second thin film transistors 134 and sensing units 148 may be provided on the second substrate 122. In the present application, the number of the second thin film transistors 134 and the number of the sensing units 148 are not limited. In some embodiments, at least one of the plurality of sensing units 148 may be electrically connected to at least one of the plurality of second thin film transistors 134. In one embodiment, one sensing unit 148 may be electrically connected to two or more second thin film transistors 134. In other embodiments, two or more sensing units 148 may be electrically connected to two or more second thin film transistors 134. In another embodiment, two or more sensing units 148 may be electrically connected to one second thin film transistor 134. The present application does not limit these numbers.

[0044] The sensing unit 148 may be used to sense photon signals and convert them into electrical signals, but the present application is not limited thereto. In some embodiments, the sensing unit 148 may be a touch sensing unit, a fingerprint sensing unit, a proximity sensing unit, or any other suitable sensing unit. Figure 1 Only one sensing unit 148 is shown, but the liquid crystal display 100A may include more sensing units 148, and the scope of the present application is not limited thereto. In some embodiments, the sensing unit 148 may include a photosensitive layer disposed between two semiconductor layers. In addition, the two semiconductor layers may be doped with different types of dopants. For example, one semiconductor layer may include an n-type dopant, while the other semiconductor layer may include a p-type dopant. In some embodiments, the concentration of the dopant in the photosensitive layer may be less than the concentration of the dopant in the semiconductor layer. In some embodiments, the sensing unit 148 may be a PIN diode, but is not limited thereto.

[0045] like Figure 1 As shown, the liquid crystal display 100A may include a liquid crystal layer 150 disposed between a second substrate 122 and a first substrate 102. Although not shown, a pixel electrode, a common electrode, and an alignment layer are disposed on the first substrate 102 and / or the second substrate 122. The alignment of the liquid crystal layer 150 may be controlled.

[0046] Since some thin film transistors, such as the second thin film transistor 134, are disposed on the second substrate 122, the space on the second substrate 122 can be utilized in a more efficient manner. As a result, fewer thin film transistors occupy the space above the first substrate 102, thereby reducing the size of the liquid crystal display 100A.

[0047] Many variations and / or modifications may be made to the embodiments of the present application. Figure 2 , which shows a cross-sectional view of a liquid crystal display 100B according to some embodiments of the present application. In some embodiments, one of the differences between the liquid crystal display 100A and the liquid crystal display 100B is that the liquid crystal display 100B may also include a shielding layer 152 and / or a shielding layer 154. It should be understood that the shielding layer 126, the shielding layer 152 and / or the shielding layer 154 can shield light of a specific wavelength, such as visible light, infrared light (IR) or ultraviolet light (UV). In another embodiment, the shielding layer 126, the shielding layer 152 and / or the shielding layer 154 may include a metal material for shielding an electric field, or include a black resin for absorbing light.

[0048] like Figure 2As shown, the shielding layer 152 can be disposed between the second thin film transistor 134 and the liquid crystal layer 150. In some embodiments, the shielding layer 152 can overlap with the semiconductor layer 142 of the second thin film transistor 134. Therefore, light can be incident on the sensing unit 148 without being incident on the second thin film transistor 134, and the second thin film transistor 134 can be unaffected by the light. In some embodiments, the shielding layer 152 may include a material that can absorb IR or shield the electric field. In some embodiments, the width W1 of the shielding layer 126 can be greater than the width W2 of the shielding layer 152. In the cross-sectional view, the width of the shielding layer can be measured in a direction perpendicular to the normal direction of the second substrate 122. In some embodiments, the material of the shielding layer 126 can be different from the material of the shielding layer 152.

[0049] like Figure 2 As shown, the shielding layer 154 may be disposed on the first thin film transistor 108. In some embodiments, the shielding layer 154 may overlap the semiconductor layer 116 of the first thin film transistor 108. Therefore, light may be incident on the sensing unit 148 without being incident on the first thin film transistor 108, and the first thin film transistor 108 may not be affected by the light.

[0050] Many variations and / or modifications may be made to the embodiments of the present application. Figure 3 , which shows a cross-sectional view of a liquid crystal display 100C according to some embodiments of the present application. In some embodiments, one difference between the liquid crystal display 100B and the liquid crystal display 100C is that the liquid crystal display 100C may include a shielding layer 126' and a sensing unit 148', which replace the shielding layer 126 and the sensing unit 148 respectively.

[0051] like Figure 3 As shown, the sensing unit 148' may extend over two or more first thin film transistors 108. More specifically, the sensing unit 148' may overlap with the semiconductor layer of two or more first thin film transistors 108. In addition, the shielding layer 126' may overlap with the sensing unit 148'. That is, the projection of the shielding layer 126' on the second substrate 122 may overlap with the projection of the sensing unit 148' on the second substrate 122.

[0052] refer to Figure 4A , which shows a top view of the liquid crystal display 100C. It should be understood that Figure 4A Some elements are omitted to clearly show the layout of the first thin film transistor 108. More specifically, Figure 4A The line AA shown is the section line, which shows Figure 3 A cross-sectional view of Figure 4AAs shown, the liquid crystal display 100C may include a data line 156 and a gate line 158, and the gate line 158 may be substantially perpendicular to the data line 156. The data line 156 may be electrically connected to the source 112 of the first thin film transistor 108. The gate line 158 may be electrically connected to the gate electrode 110 of the first thin film transistor 108. The material of the data line 156 and the gate line 158 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti). Figure 4A As shown, the data lines 156 and the gate lines 158 may define a plurality of pixels or sub-pixels of the liquid crystal display 100C.

[0053] refer to Figure 4B , which shows a top view of the liquid crystal display 100C. It should be understood that Figure 4B Some elements are omitted to clearly show the layout of the second thin film transistor 134, the sensing unit 148' and the shielding layer 126'. More specifically, Figure 4B The line BB shown is a cross-section line, which shows Figure 3 A cross-sectional view of Figure 4B As shown, the liquid crystal display 100C may include a data line 160 and a gate line 162. The data line 160 may be electrically connected to the source electrode 138 of the second thin film transistor 134. The gate line 162 may be electrically connected to the gate electrode 136 of the second thin film transistor 134. The materials of the data line 160 and the gate line 162 may include metal.

[0054] like Figure 4A and Figure 4B As shown, shielding layer 126' may define a plurality of openings and allow light to pass through the openings. Shielding layer 126' may overlap data line 160 and gate line 162, and overlap data line 156 and gate line 158. Sensing unit 148' may overlap two or more first thin film transistors 108. Sensing unit 148' may extend in a direction parallel to an extending direction of gate line 162. Since the surface area of ​​sensing unit 148' is greater than the surface area of ​​sensing unit 148, sensing unit 148' may receive more light, thereby improving the sensitivity of liquid crystal display 100C.

[0055] Many variations and / or modifications may be made to the embodiments of the present application. Figure 4C , which shows a top view of a liquid crystal display 100C according to some embodiments of the present application. In some embodiments, the sensing unit 148" may include at least one protruding portion 148P, and the protruding portion 148P extends in a direction substantially parallel to the extending direction of the data line 160. In addition, as Figure 4CAs shown, the shielding layer 126' may overlap with at least one protrusion 148P. In this embodiment, the sensing unit 148" has at least one protrusion 148P, and the sensing unit 148" may have a larger surface area, thereby improving the sensitivity of the liquid crystal display 100C.

[0056] refer to Figure 5 , which shows a cross-sectional view of a liquid crystal display 200A according to some embodiments of the present application. The liquid crystal display 200A includes a first substrate 202. The first substrate 202 may be the same or similar to the first substrate 102. The liquid crystal display 200A may include a buffer layer 204 and a gate dielectric layer 206, which may be the same or similar to the buffer layer 104 and the gate dielectric layer 106, respectively. The liquid crystal display 200A may include a first thin film transistor 208. The first thin film transistor 208 may include a gate electrode 210, a source electrode 212, a drain electrode 214, and a semiconductor layer 216, which may be the same or similar to the gate electrode 110, the source electrode 112, the drain electrode 114, and the semiconductor layer 116. In some embodiments, the semiconductor layer may include a doped region and a non-doped region. Although not shown, two or more first thin film transistors 208 may be disposed on the first substrate 202, and the number of first thin film transistors 208 is not limited in the present application. The liquid crystal display 200A may include a dielectric layer 218 and a passivation layer 220. The materials of the dielectric layer 218 and the passivation layer 220 may include dielectric materials such as PSG, BPSG, FSG, silicon oxide, silicon nitride, amorphous carbon fluoride, polyparaxylene, BCB, polyimide or other suitable materials. Figure 5 As shown, the liquid crystal display 200A may include a color filter layer 226a and a color filter layer 226b disposed on the passivation layer 220. The color filter layer 226a and the color filter layer 226b can allow light with a specific wavelength to pass through. For example, the color filter layer 226a and the color filter layer 226b may include a red color filter layer, a green color filter layer, a blue filter layer or an infrared color filter layer, but is not limited thereto. The liquid crystal display 200A may include a planarization layer 230. The material of the planarization layer 230 may be the same or similar to the material of the passivation layer 220. In some embodiments, the liquid crystal display 200A may include a curved liquid crystal display or a flexible liquid crystal display. The color filter layer 226a and the color filter layer 226b disposed on the first substrate 202 may reduce light leakage caused by the curved liquid crystal display.

[0057] like Figure 5As shown, the liquid crystal display 200A may include a pixel electrode 232, a dielectric layer 234 and a common electrode 236. The pixel electrode 232 is disposed on the planarization layer 230, and the common electrode 236 is disposed on the dielectric layer 234. In other embodiments, the pixel electrode 232 may be disposed on the common electrode 236, or the pixel electrode 232 and the common electrode 236 may be disposed on the same layer, but the present application is not limited thereto. The voltage difference between the pixel electrode 232 and the common electrode 236 may be controlled by the first thin film transistor 208 through the conductive via 238. The conductive via 238 may penetrate the planarization layer 230 and the color filter layer 226b. FIG. 5 shows that the common electrode 236 is patterned, and the common electrode 236 may have discrete portions. Many changes and / or modifications may be made to the embodiments of the present application. In some embodiments, the common electrode 236 is not patterned. The materials of the pixel electrode 232 , the common electrode 236 and the conductive via 238 may include metal, a transparent conductive material (eg, indium tin oxide (ITO)), or a combination thereof.

[0058] The liquid crystal display 200A may include an alignment layer 240. The alignment layer 240 may be used to control the alignment of the liquid crystal layer 242. The material of the alignment layer 240 may include polyimide (PI), but is not limited thereto. Figure 5 As shown, the liquid crystal display 200A may include a spacer 244 disposed between the first substrate 202 and the second substrate 246. In some embodiments, the material of the spacer 244 may include, for example, polyethylene terephthalate (PET), polyethylene (PE), polyethersulfone (PES), polycarbonate (PC), polymethylmethacrylate (PMMA), glass, any other suitable material or combination thereof, but is not limited thereto.

[0059] like Figure 5As shown, the liquid crystal display 200A may include a second substrate 246, which may be the same as or similar to the second substrate 122. The liquid crystal display 200A may include a gate dielectric layer 248, which may be the same as or similar to the gate dielectric layer 128. The liquid crystal display 200A may include a second thin film transistor 250. The second thin film transistor 250 may include a gate electrode 252a, a gate electrode 252b, a source 254, a drain 256, and a semiconductor layer 258. In the present embodiment, the second thin film transistor 250 includes a double-gate thin film transistor, which has two gate electrodes, and the two gate electrodes are arranged on opposite sides of the semiconductor layer of the second thin film transistor 250. In other embodiments, the second thin film transistor 250 may include, for example, a top gate thin film transistor, a bottom gate thin film transistor, or a double gate thin film transistor. In some embodiments, the gate electrode 252b may be selectively formed.

[0060] The source electrode 254, the drain electrode 256 and the semiconductor layer 258 may be the same or similar to the source electrode 138, the drain electrode 140 and the semiconductor layer 142, respectively. In some embodiments, the material of the source electrode 254 and the drain electrode 256 may include metal, for example. The liquid crystal display 200A may include a sensing unit 264, which may be the same or similar to the sensing unit 148. Figure 5 As shown, the second thin film transistor 250 is electrically connected to the sensing unit 264. Although not shown in the figure, two or more second thin film transistors 250 and the sensing unit 264 can be disposed on the second substrate 246. The present application does not limit the number of the second thin film transistors 250 and the number of the sensing units 264. The liquid crystal display 200A further includes a dielectric layer 266 and a dielectric layer 268. The materials of the dielectric layer 266 and the dielectric layer 268 can include the aforementioned dielectric materials.

[0061] The liquid crystal display 200A may include an alignment layer 270. Figure 5 As shown, the alignment layer 240 and the alignment layer 270 may be disposed on opposite sides of the liquid crystal layer 242 and are configured to control the alignment of the liquid crystal layer 242. The material of the alignment layer 270 may include polyimide, but is not limited thereto. The liquid crystal display 200A may include a liquid emission region 200LR, and the liquid emission region 200LR may be defined as a region overlapping with the pixel electrode 232, but is not limited thereto.

[0062] In the present embodiment, the gate electrode 252a can be used as a shielding layer and can reduce the light that affects the semiconductor of the second thin film transistor 250. In addition, the color filter layer can be disposed on the first substrate 202 instead of the second substrate 246. Since some thin film transistors (such as the second thin film transistor 250) are disposed on the second substrate 246, there is additional space that can be used to set the color filter layer. Therefore, the space on the first substrate 202 can be used in a more efficient manner. In addition, when the liquid crystal display 200A is a curved liquid crystal display, the color filter layer disposed on the first substrate 202 can reduce the color shift caused by the misalignment between the pixel and the color filter layer.

[0063] Many variations and / or modifications may be made to the embodiments of the present application. Figure 6 , which shows a cross-sectional view of a liquid crystal display 200B according to some embodiments of the present application. In some embodiments, one of the differences between the liquid crystal display 200A and the liquid crystal display 200B is that the liquid crystal display 200B may also include buffer layers 272 and 274 disposed on the second substrate 246. The buffer layers 272 and 274 may be the same or similar to the buffer layer 124. In addition, the liquid crystal display 200B may include a shielding layer 276, a shielding layer 278, and a shielding layer 280. It should be understood that the shielding layer 276, the shielding layer 278, and / or the shielding layer 280 may shield a portion of light, including visible light or light with a specific wavelength, such as infrared light (IR) or ultraviolet light (UV). In another embodiment, the shielding layer 276, the shielding layer 278, and / or the shielding layer 280 include a metal material for shielding an electric field. In addition, in the present embodiment, the liquid crystal display 200B may include a second thin film transistor 250 having a single gate electrode (e.g., a gate electrode 252). When the material of shielding layer 276, shielding layer 278 and / or shielding layer 280 includes a conductive material such as metal, shielding layer 276, shielding layer 278 and / or shielding layer 280 may not contact other conductive and / or semiconductive elements (such as conductive via 238).

[0064] In some embodiments, the shielding layer 276 may be disposed between the second substrate 246 and the second thin film transistor 250. Figure 6 As shown, the shielding layer 276 overlaps the semiconductor layer 258 of the second thin film transistor 250. The shielding layer 278 may be disposed between the second thin film transistor 250 and the liquid crystal layer 242. In some embodiments, the shielding layer 278 overlaps the semiconductor layer 258 of the second thin film transistor 250.

[0065] The shielding layer 280 may be disposed between the first thin film transistor 208 and the liquid crystal layer 242. In some embodiments, the shielding layer 280 overlaps the semiconductor layer 216 of the first thin film transistor 208. In addition, at least a portion of the shielding layer 280 may be disposed between the color filter layer 226a and the color filter layer 226b.

[0066] like Figure 6 As shown, the light beam LB from the light source can be incident on the sensing unit 264, while reducing the possibility of affecting the first thin film transistor 208 and the second thin film transistor 250. In some embodiments, at least one of the shielding layer 276, the shielding layer 278 and the shielding layer 280 can be optionally formed according to design requirements. For example, in some embodiments, the shielding layer 278 and the shielding layer 280 may not be formed.

[0067] In some embodiments, the materials of shielding layer 276, shielding layer 278 and / or shielding layer 280 may be different. For example, shielding layer 280 may include a metal material to reflect light from the light source. Shielding layer 276 and / or shielding layer 278 may include a light absorbing material to reduce the reflectivity of second thin film transistor 250.

[0068] Many variations and / or modifications may be made to the embodiments of the present application. Figure 7 , which shows a cross-sectional view of a liquid crystal display 200C according to some embodiments of the present application. In some embodiments, one of the differences between the liquid crystal display 200B and the liquid crystal display 200C is that the liquid crystal display 200C may include a shielding layer 282. In some embodiments, the shielding layer 282 may not overlap with the semiconductor layer 258 of the second thin film transistor 250. In some embodiments, the shielding layer 282 may include an extension of the source 254. That is, the source 254 may include an extension disposed on the dielectric layer 268, and the extension may serve as a shielding layer. Due to the shielding layer 282 and the spacer 244, light from the light source can be incident on the sensing unit 264 while reducing the possibility of affecting the second thin film transistor 250.

[0069] refer to Figure 8, which shows a cross-sectional view of a liquid crystal display 300 according to some embodiments of the present application. The liquid crystal display 300 includes a first substrate 302. The first substrate 302 may be the same as or similar to the first substrate 102. The liquid crystal display 300 may include a backlight module 304. The backlight module 304 may include at least one light source. For example, the backlight module 304 may include, for example, a plurality of light-emitting diodes (LEDs) or organic light-emitting diodes (OLEDs). The light-emitting diode may be a micro LED or a sub-millimeter light-emitting diode (Mini LED). The backlight module 304 may include a direct-type backlight module or an edge-lit backlight module, but is not limited thereto. Some additional layers, such as a polarizer, may be provided between the first substrate 302 and the backlight module 304, but the present application is not limited thereto.

[0070] The liquid crystal display 300 may include a buffer layer 306 and a gate dielectric layer 308 that are the same or similar to the buffer layer 104 and the gate dielectric layer 106, respectively. The liquid crystal display 300 may include a first thin film transistor 310. The first thin film transistor 310 may include a gate electrode 312, a source electrode 314, a drain electrode 316, and a semiconductor layer 318, which may be the same or similar to the gate electrode 110, the source electrode 112, the drain electrode 114, and the semiconductor layer 116, respectively. Although not shown in the figure, two or more first thin film transistors 310 may be disposed on the first substrate 302, and the present application does not limit the number of first thin film transistors 310. The liquid crystal display 300 may include a dielectric layer 322. The material of the dielectric layer 322 may include the aforementioned dielectric material.

[0071] like Figure 8 As shown, the liquid crystal display 300 may include a shielding layer 324, which is on the dielectric layer 322. The shielding layer 324 may be the same as or similar to the shielding layer 154. The liquid crystal display 300 may include a color filter layer 326a and a color filter layer 326b, which are disposed on the dielectric layer 322. Figure 8The display color filter layer 326a and the color filter layer 326b are separated from each other. In some embodiments, the color filter layer 326a and the color filter layer 326b may partially overlap. The color filter layer 326a and the color filter layer 326b may allow light with a specific wavelength to pass through. For example, the color filter layer 326a and the color filter layer 326b may include a red filter, a green filter, a blue filter, or an infrared filter, but are not limited thereto. The liquid crystal display 300 may include a conductive via 328. In some embodiments, the conductive via 328 may penetrate the color filter layer 326b and the dielectric layer 322. The conductive via 328 may include a conductive material, such as a metal or a transparent conductive material (such as indium tin oxide (ITO)). The conductive via 328 may be electrically connected to the first thin film transistor 310. The liquid crystal display 300 may include a planarization layer 332. The material of the planarization layer 332 may be the same or similar to the material of the dielectric layer 322, for example.

[0072] like Figure 8 As shown, the liquid crystal display 300 may include a pixel electrode 330 and a common electrode 336. The pixel electrode 330 may be disposed on the color filter layer 326b, and the common electrode 336 may be disposed on the planarization layer 332. In other embodiments, the pixel electrode 330 may be disposed on the common electrode 336, or the pixel electrode 330 and the common electrode 336 may be disposed on the same layer, but the present application is not limited thereto. The voltage difference between the pixel electrode 330 and the common electrode 336 may be controlled by the first thin film transistor 310 through the conductive through hole 328.

[0073] The liquid crystal display 300 may include an alignment layer 334. The alignment layer 334 may include polyimide, but is not limited thereto. Figure 8 As shown, the liquid crystal display 300 may include a spacer 339 disposed between the first substrate 302 and the second substrate 340. The material of the spacer 339 may be the same as or similar to the material of the spacer 244, for example.

[0074] like Figure 8 As shown, the liquid crystal display 300 may include a second substrate 340, which may be the same as or similar to the second substrate 122. The liquid crystal display 300 may include a buffer layer 342, a buffer layer 344, and a dielectric layer 346, which may be the same as or similar to the buffer layer 272, the buffer layer 274, and the dielectric layer 266, respectively. The liquid crystal display 300 may include a shielding layer 348 that is the same as or similar to the shielding layer 126. The liquid crystal display 300 may include a second thin film transistor 350. The second thin film transistor 350 may include a gate electrode 352, a source electrode 354, a drain electrode 356, and a semiconductor layer 358, which may be the same as or similar to the gate electrode 136, the source electrode 138, the drain electrode 140, and the semiconductor layer 142, respectively. In some embodiments, the material of the source electrode 354 and the drain electrode 356 may include, for example, a metal.

[0075] The liquid crystal display 300 may include, for example, a sensing unit 364 that is the same as or similar to the sensing unit 148. Figure 8 As shown, the second thin film transistor 350 is electrically connected to the sensing unit 364 through the electrode 362. Although not shown in the figure, two or more second thin film transistors 350 and the sensing unit 364 can be disposed on the second substrate 340, and the present application does not limit the number of the second thin film transistors 350 and / or the sensing unit 364. In some embodiments, a buffer layer (not shown) or a planarization layer (not shown) can be disposed between the sensing unit 364 and the alignment layer 368, but the present application is not limited thereto.

[0076] The liquid crystal display 300 may include a dielectric layer 366. The liquid crystal display 300 may include an alignment layer 368. Figure 8 As shown, the alignment layer 334 and the alignment layer 368 are disposed on opposite sides of the liquid crystal layer 338. The alignment layer 368 may include polyimide, but is not limited thereto. The liquid crystal display 300 may include a sealant 370, which may be disposed in a peripheral region of the liquid crystal display 300.

[0077] In some embodiments, a distance D2 between the first thin film transistor 310 and the color filter layer (e.g., color filter layer 326b) overlapping the first thin film transistor 310 along the normal direction of the first substrate 302 is smaller than a distance D3, where the distance D3 is a distance between the second thin film transistor 350 and the color filter layer (e.g., color filter layer 326b) overlapping the second thin film transistor 350 along the normal direction of the first substrate 302. More specifically, in the normal direction of the first substrate 302, a minimum distance between the semiconductor layer 318 of the first thin film transistor 310 and the color filter layer is smaller than a minimum distance between the semiconductor layer 358 of the second thin film transistor 350 and the color filter layer.

[0078] refer to 9A to 9E , which shows a cross-sectional view of different stages of a process for manufacturing a liquid crystal display 400A according to some embodiments of the present application. It should be noted that elements or layers that are identical or similar to elements of a liquid crystal display are represented by the same symbols. In some embodiments, identical or similar elements or layers represented by the same symbols have the same meaning and will not be described in detail for the sake of brevity.

[0079] like Fig. 9A As shown, a first substrate 102 is provided. Next, as Fig. 9B As shown, a first thin film transistor 108 may be formed on the first substrate 102. A buffer layer 104, a gate dielectric layer 106 and a dielectric layer 120 may also be formed on the first substrate 102. Next, as shown in FIG. Fig. 9CAs shown, a second substrate 122 is provided. In some embodiments, as Fig.9D As shown, the second thin film transistor 134 and the sensing unit 148 are formed on the second substrate 122. Fig.9E As shown, the first substrate 102 and the second substrate 122 are combined to form a liquid crystal layer 150 between the first substrate 102 and the second substrate 122. It should be understood that manufacturing the liquid crystal display 400A may include forming other elements. For example, some shielding layers may be formed on the first substrate 102 and / or the second substrate 122. Some color filter layers may be formed on the first substrate 102 or the second substrate 122. In addition, Fig. 9A and Fig. 9B The stage can be Fig. 9C and Fig.9D It can be executed before, after or during the phase.

[0080] refer to FIG. 10A to FIG. 10E , which shows cross-sectional views of different stages of a process for manufacturing a liquid crystal display 400B according to some embodiments of the present application.

[0081] like Fig. 10A As shown, a first substrate 102 is provided, and a first flexible substrate 170 can be attached to the first substrate 102 or formed on the first substrate 102. Then, as shown in FIG. Fig. 10B As shown, the first thin film transistor 108 can be formed on the first flexible substrate 170. The buffer layer 104, the gate dielectric layer 106 and the dielectric layer 120 can also be formed on the first flexible substrate 170. In some embodiments, the first flexible substrate 170 is disposed between the first substrate 102 and the first thin film transistor 108. Then, as Fig. 10C As shown, a second substrate 122 is provided, and a second flexible substrate 180 can be attached to the second substrate 122 or formed on the second substrate 122. In some embodiments, as Fig. 10D As shown, the second thin film transistor 134 and the sensing unit 148 are formed on the second flexible substrate 180. In some embodiments, the second flexible substrate 180 is disposed between the second substrate 122 and the second thin film transistor 134. Fig.10E As shown, the first substrate 102 and the second substrate 122 are combined, and a liquid crystal layer 150 is formed between the first substrate 102 and the second substrate 122. In some embodiments, a first flexible substrate 170 and a second flexible substrate 180 are formed between the first substrate 102 and the second substrate 122. It should be understood that the manufacture of the liquid crystal display 400B may include forming other elements. For example, some shielding layers may be formed on the first substrate 102 and / or the second substrate 122. Some color filter layers may be formed on the first substrate 102 or the second substrate 122. In addition, Fig. 10A and Fig. 10B The stage can be Fig. 10Cand Fig. 10D It can be executed before, after or during the phase.

[0082] refer to FIG. 11A to FIG. 11E , which shows cross-sectional views of different stages of a process for manufacturing a liquid crystal display 400C according to some embodiments of the present application.

[0083] like Fig.11A As shown, a first substrate 102 is provided. Next, as Fig. 11B As shown, a first thin film transistor 108' can be formed on the first substrate 102. A buffer layer 104, a gate dielectric layer 106 and a dielectric layer 120 can also be formed on the first substrate 102. In some embodiments, a first flexible substrate 170 is formed on the first thin film transistor 108', and the first thin film transistor 108' can be disposed between the first substrate 102 and the first flexible substrate 170. The difference between the first thin film transistor 108' and the first thin film transistor 108 is the position of the gate electrode 110. In other embodiments, the first thin film transistor 108' and the first thin film transistor 108 can be the same type of thin film transistor. For example, the first thin film transistor 108' and the first thin film transistor 108 are both top gate thin film transistors or bottom gate thin film transistors, but the present application is not limited thereto. The first thin film transistor 108 and the first thin film transistor 108' can perform the same function.

[0084] Then, if Fig. 11C As shown, a second substrate 122 is provided. In some embodiments, as Fig.11D As shown, a second thin film transistor 134' and a sensing unit 148 are formed on the second substrate 122. In some embodiments, a second flexible substrate 180 is formed on the second thin film transistor 134'. The second thin film transistor 134' can be disposed between the second substrate 122 and the second flexible substrate 180. The difference between the second thin film transistor 134' and the second thin film transistor 134 is the position of the gate electrode 136. The second thin film transistor 134 and the second thin film transistor 134' can perform the same function. In other embodiments, the second thin film transistor 134' and the second thin film transistor 134 can be the same type of thin film transistor. For example, the second thin film transistor 134' and the second thin film transistor 134 are both top gate thin film transistors or bottom gate thin film transistors, but the present application is not limited thereto. In addition, Fig.11A and Fig. 11B The stage can be Fig. 11C and Fig.11D It can be executed before, after or during the phase.

[0085] like Fig.11EAs shown, the first flexible substrate 170 and the second flexible substrate 180 are combined, and the first substrate 102 and the second substrate 122 can be removed. In some embodiments, the first thin film transistor 108' and the second thin film transistor 134' are formed between the first flexible substrate 170 and the second flexible substrate 180.

[0086] refer to Fig.12 , providing a liquid crystal display 500. In some embodiments, the liquid crystal display 500 may include a flexible liquid crystal display, a touch liquid crystal display, a curved liquid crystal display, a multi-tiled display, or other suitable displays. For example, the liquid crystal display 500 is a curved liquid crystal display. When the liquid crystal display 500 is bent to form a curved liquid crystal display, the alignment of some elements of the liquid crystal display 500 (such as a color filter layer or a shielding layer) may be offset. Therefore, some elements originally disposed on the second substrate 122 (for example, a color filter layer and / or a shielding layer (not shown)) can be moved to be disposed on the first substrate 102 to reduce the offset. The space of the second substrate 122 may be sufficient to set the sensing unit 148' and the second thin film transistor 134.

[0087] Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the claims.

Claims

1. A liquid crystal display comprising: a first substrate; A plurality of first thin film transistors are disposed on the first substrate; a second substrate overlapping the first substrate; A plurality of second thin film transistors are disposed on the second substrate; a passivation layer disposed between the first substrate and the second substrate; a conductive via penetrating the passivation layer; a first electrode disposed between the first substrate and the second substrate and electrically connected to at least one of the plurality of first thin film transistors through the conductive via; a first shielding layer disposed between the plurality of second transistors and the second substrate; The first shielding layer overlaps the conductive through hole and the plurality of first thin film transistors.

2. The liquid crystal display according to claim 1, wherein The invention further comprises a plurality of second shielding layers disposed between the plurality of first thin film transistors and the plurality of second thin film transistors, wherein the first shielding layer overlaps the plurality of second shielding layers.

3. The liquid crystal display according to claim 2, wherein Each of the plurality of second shielding layers overlaps each of the plurality of first thin film transistors.

4. The liquid crystal display according to claim 2, wherein The number of the second shielding layers is the same as the number of the first thin film transistors.

5. The liquid crystal display according to claim 1, wherein The invention further comprises at least one second shielding layer, which is disposed between the plurality of first thin film transistors and the plurality of second thin film transistors and overlaps the conductive through hole.

6. The liquid crystal display according to claim 1, wherein The invention further comprises a spacer layer disposed between the first substrate and the second substrate.

7. The liquid crystal display according to claim 6, wherein In a cross-sectional direction, a width of a top portion of the spacer layer is different from a width of a bottom portion of the spacer layer.

8. The liquid crystal display according to claim 7, wherein The width of the top portion of the spacer layer is greater than the width of the bottom portion.

9. The liquid crystal display according to claim 1, wherein The invention further comprises a planarization layer disposed on the passivation layer, wherein the conductive through hole passes through the planarization layer.

10. The liquid crystal display according to claim 9, wherein The device further includes a second electrode disposed on the planarization layer.

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