Etching apparatus and electrode

Abstract

The disclosure discloses an etching device and an electrode. The etching device comprises an etching groove, the etching groove has a bottom wall and a side wall, and at least one liquid discharge port is arranged on the bottom wall; a liquid discharge pipeline is in communication with the etching groove through the liquid discharge port; a liquid discharge pump is arranged on the liquid discharge pipeline; a support plate is located in the etching groove and connected to the side wall; wherein the support plate is configured to carry the electrode; the electrode has a plurality of through holes, and etching liquid for etching the through holes is discharged to the liquid discharge pipeline through the liquid discharge port; the distance between the support plate and the liquid discharge port is greater than or equal to a preset value.

Description

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to the technical field of semiconductor technology, and in particular to an etching device and an electrode. BACKGROUND

[0002] A plasma etching machine is a commonly used device in the process of manufacturing semiconductor devices. Generally, an upper electrode and a lower electrode are oppositely arranged in a reaction chamber of the plasma etching machine. The upper electrode is located at the top of the reaction chamber, and the lower electrode is used to carry a to-be-etched object. A high-voltage electric field is formed between the upper electrode and the lower electrode to excite etching gas to generate plasma, so as to etch the to-be-etched object. SUMMARY

[0003] According to a first aspect of embodiments of the present disclosure, an etching device is provided, comprising:

[0004] an etching groove, the etching groove having a bottom wall and a side wall, and at least one liquid discharge port being arranged on the bottom wall;

[0005] a liquid discharge pipeline, the liquid discharge pipeline being in communication with the etching groove through the liquid discharge port;

[0006] a liquid discharge pump, the liquid discharge pump being arranged on the liquid discharge pipeline;

[0007] a support plate, the support plate being located in the etching groove and connected to the side wall; wherein the support plate is configured to carry an electrode; the electrode has a plurality of through holes, and etching liquid for etching the through holes is discharged to the liquid discharge pipeline through the liquid discharge port; a distance between the support plate and the liquid discharge port is greater than or equal to a preset value.

[0008] In some embodiments, a plurality of the liquid discharge ports are arranged on the bottom wall; the liquid discharge pipeline comprises a plurality of liquid discharge branches, and a first end of one of the liquid discharge branches is in communication with the etching groove through one of the liquid discharge ports;

[0009] The etching device further comprises a plurality of first flow adjusting components, and the plurality of first flow adjusting components are respectively arranged on the plurality of liquid discharge branches; wherein the first flow adjusting components are configured to adjust the flow size of the etching liquid discharged to the corresponding liquid discharge branches.

[0010] In some embodiments, the liquid discharge pipeline further comprises a liquid discharge main pipeline, and the liquid discharge main pipeline is in communication with a second end of each of the liquid discharge branches;

[0011] The etching device further comprises a first flow meter, and the first flow meter is arranged on the liquid discharge main pipeline; wherein the first flow meter is configured to measure the flow size of the etching liquid discharged.

[0012] In some embodiments, the liquid discharge pump is arranged on the liquid discharge main line.

[0013] In some embodiments, the etching device further comprises:

[0014] A liquid supply line is in communication with the top of the etching tank, wherein the liquid supply line is configured to discharge the etching liquid;

[0015] A second flow meter is arranged on the liquid supply line, wherein the second flow meter is configured to measure the flow rate of the discharged etching liquid.

[0016] In some embodiments, the liquid supply line comprises a liquid supply main line and a plurality of liquid supply branch lines, wherein the first end of each of the liquid supply branch lines is in communication with the top of the etching tank, and the second end of each of the liquid supply branch lines is in communication with the liquid supply main line.

[0017] The etching device further comprises a plurality of second flow regulating components, wherein each of the second flow regulating components is arranged on the liquid supply branch line, and wherein the second flow regulating component is configured to regulate the flow rate of the etching liquid discharged into the corresponding liquid supply branch line.

[0018] In some embodiments, the flow rate of the discharged etching liquid is substantially the same as the flow rate of the discharged etching liquid.

[0019] In some embodiments, the plurality of liquid discharge openings are uniformly distributed on the bottom wall.

[0020] In some embodiments, the preset value is greater than or equal to 100 mm.

[0021] According to a second aspect of the embodiments of the present disclosure, an electrode is provided, which has at least one micro-hole formed by etching using the etching device according to any one of the embodiments of the first aspect of the present disclosure.

[0022] In the etching device provided by the embodiments of the present disclosure, the liquid discharge pump is arranged on the liquid discharge line, and the distance between the support plate and the liquid discharge opening is greater than or equal to the preset value. First, the liquid discharge pump can accelerate the discharge of the etching liquid, thereby improving the etching efficiency of the electrode. Second, by increasing the height of the support plate, the distance between the liquid discharge opening and the electrode can be increased, and the influence of the vortex generated during the pumping of the liquid discharge pump on the etching of the through hole can be reduced, which is conducive to improving the uniformity of the micro-hole etching of the electrode, thereby improving the production efficiency and the quality of the electrode. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 is a schematic view of an electrode according to an exemplary embodiment.

[0024] Figure 2 FIG. 1 is a schematic diagram of an etching device according to an exemplary embodiment.

[0025] Figure 3 FIG. 2 is a top view schematic diagram of an electrode according to an exemplary embodiment.

[0026] Figure 4 FIG. 3 is a schematic diagram of a first etching device according to an embodiment of the present disclosure.

[0027] Figure 5 FIG. 4 is a top view schematic diagram of an etching tank bottom wall provided with a liquid discharge port according to an embodiment of the present disclosure.

[0028] Figure 6 FIG. 5 is a schematic diagram of a second etching device according to an embodiment of the present disclosure.

[0029] Figure 7 FIG. 6 is a top view schematic diagram of an etching tank bottom wall provided with a plurality of liquid discharge ports according to an embodiment of the present disclosure.

[0030] Figure 8 FIG. 7 is a schematic diagram of test data after etching of an electrode according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0031] In order to facilitate the understanding of the present disclosure, exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms, and should not be limited by the specific embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure can be more thoroughly understood, and the scope of the present disclosure can be accurately conveyed to those skilled in the art.

[0032] In the following description, a large number of specific details are given to provide a more thorough understanding of the present disclosure. However, it should be apparent to those skilled in the art that the present disclosure can be practiced without one or more of these details. In some embodiments, in order to avoid obscuring the present disclosure, some technical features that are well known in the art are not described; that is, all features of actual embodiments can not be described herein, and well-known functions and structures are not described in detail.

[0033] In the following, the present disclosure will be described in more detail with reference to the accompanying drawings. The advantages and features of the present disclosure will be more apparent from the following description and claims. It should be noted that the drawings are very simplified and use non-precise proportions, only to facilitate, clarify the purpose of assisting the description of the embodiments of the present disclosure.

[0034] It is to be understood that the meaning of "on," "over," and "above" in the present disclosure should be interpreted in the broadest context, such that "on" not only means "on" something with no intervening characteristics or layers therebetween (i.e., directly on something), but also includes "on" something with intervening characteristics or layers therebetween.

[0035] In the embodiments of the present disclosure, the terms "first", "second", "third" and the like are used to distinguish similar objects, and do not necessarily have to describe a specific order or sequence.

[0036] In the embodiments of the present disclosure, the term "layer" refers to a portion of material that includes a region having a thickness. The layer can extend over the entirety of the underlying or overlying structure, or can have a scope that is less than the scope of the underlying or overlying structure. Further, the layer can be a region of a continuous structure that has a thickness that is less than the thickness of the continuous structure, whether the continuous structure is homogeneous or heterogeneous. For example, the layer can be located between a top surface and a bottom surface of the continuous structure, or the layer can be between any horizontal pair of planes at the top surface and the bottom surface of the continuous structure. The layer can extend horizontally, vertically, and / or along an inclined surface. The layer can include a plurality of sub-layers.

[0037] It should be noted that the technical solutions described in the embodiments of the present disclosure can be combined arbitrarily without conflict.

[0038] Figure 1 is a schematic view of an electrode according to an exemplary embodiment, Figure 2 is a schematic view of an etching device according to an exemplary embodiment, Figure 3 is a top view of an electrode according to an exemplary embodiment. The electrode and the method for manufacturing the electrode will be described below with reference to Figures 1 to 3 The electrode and the method for manufacturing the electrode will be described below with reference to

[0039] Referring to Figure 1 As shown in the figure, the electrode E is a flat plate, and a plurality of micropores S are arranged in an array on the electrode E. The electrode E can be used in a dry etching device. For example, the electrode E can be used as an upper electrode of a plasma etching machine. In the process of manufacturing the electrode E, an array of small holes can be formed by drilling, and then the small holes can be etched by etching liquid to gradually expand the small holes and make the inside of the small holes smooth and flat, thereby forming a plurality of micropores S as shown in the figure. Figure 1 As shown in the figure, the electrode E is a flat plate, and a plurality of micropores S are arranged in an array on the electrode E. The electrode E can be used in a dry etching device. For example, the electrode E can be used as an upper electrode of a plasma etching machine. In the process of manufacturing the electrode E, an array of small holes can be formed by drilling, and then the small holes can be etched by etching liquid to gradually expand the small holes and make the inside of the small holes smooth and flat, thereby forming a plurality of micropores S as shown in the figure.

[0040] The etching of the micropores S of the electrode E is generally completed by wet etching. Specifically, referring to Figure 2 As shown in the figure, when the etching process of the electrode E is performed, the electrode E is placed on the support plate 130 of the etching device 100, and the support plate 130 and the electrode E can divide the etching tank 110 into upper and lower parts. A plurality of through holes S0 are formed on the electrode E, Figure 3A top view of a plurality of through holes S0 is shown, and opposite ends of each through hole S0 are exposed to the upper and lower parts of the etching tank 110, respectively. The etching liquid discharged into the upper part of the etching tank 110 flows into the lower part of the etching tank 110 through the through holes S0 under the action of gravity and is discharged through the liquid discharge port 120. In the process of flowing downward, the etching liquid completes the etching of the through holes S0. However, due to the very small size of the through holes S0 (about 0.5 mm in diameter), the flow rate of the etching liquid is slow under the action of gravity alone, resulting in low efficiency of micro-hole etching.

[0041] To improve the efficiency of micro-hole etching, a suction liquid discharge pump can be added to the liquid discharge port 120 to increase the flow rate of the etching liquid by suction of the liquid discharge pump. However, the inventors of the present application have found that although the addition of the liquid discharge pump to the liquid discharge port 120 can improve the etching efficiency, a vortex will be formed around the liquid discharge port 120, causing differences in the flow rate of the etching liquid in each through hole S0, resulting in uneven etching of each micro-hole S and affecting the quality of the electrode E.

[0042] Based on this, to solve one or more of the above technical problems, the present disclosure provides an etching device. Figure 4 is a schematic view of a first etching device according to an embodiment of the present disclosure, Figure 5 is a top view schematic view of an etching tank bottom wall provided with one liquid discharge port, and the following will be described in combination with Figure 4 and Figure 5 The first etching device provided by the embodiments of the present disclosure is exemplarily described.

[0043] Referring to Figure 4 , the etching device 200 includes an etching tank 210, a liquid discharge pipeline 220, a liquid discharge pump 240, and a support plate 230. The etching tank 210 has a bottom wall 210a and a side wall 210b, and the bottom wall 210a is provided with at least one liquid discharge port H (as shown in Figure 5 ), the liquid discharge pipeline 220 communicates with the etching tank 210 through the liquid discharge port H, the liquid discharge pump 240 is arranged on the liquid discharge pipeline 220, and the support plate 230 is located in the etching tank 210 and connected to the side wall 210b. The support plate 230 is configured to carry the electrode E; the electrode E has a plurality of through holes S0, and the etching liquid for etching the through holes S0 is discharged to the liquid discharge pipeline 220 through the liquid discharge port H; the distance between the support plate 230 and the liquid discharge port H is greater than or equal to a preset value.

[0044] In the process of etching the electrode E, the electrode E can be placed on the support plate 230, and the support plate 230 and the electrode E can divide the etching tank 210 into an upper part and a lower part, so that the opposite ends of each through hole S0 are exposed to the upper part and the lower part of the etching tank 210 respectively. The etching liquid discharged into the upper part of the etching tank 210 flows into the lower part of the etching tank 210 through the through hole S0 under the action of gravity, and is discharged to the liquid discharge pipeline 220 through the liquid discharge port H. The liquid discharge pump 240 can accelerate the discharge of the etching liquid, thereby improving the etching efficiency of the electrode.

[0045] Here, the support plate 230 can be a hollow support plate, and when the electrode E is placed on the support plate 230, the plurality of through holes S0 can be located in the hollow region of the support plate 230. The liquid discharge pump 240 can be arranged at any position on the liquid discharge pipeline 220, for example, at the connection between the liquid discharge pipeline 220 and the liquid discharge port H or other positions, and the present disclosure has no special limitation on the arrangement position of the liquid discharge pump 240.

[0046] It should be noted that in the case of adding the liquid discharge pump 240 on the liquid discharge pipeline 220, the vortex near the liquid discharge port H in the etching tank 210 will be more serious than the vortex at a position away from the liquid discharge port H. When the liquid discharge pump 240 is used for suction, the vortex around the liquid discharge port H will be more serious. In the present disclosure, by arranging the distance between the support plate 230 and the liquid discharge port H to be greater than or equal to a preset value, the influence of the vortex generated when the liquid discharge pump 240 is suctioned on the etching of the through hole S0 can be reduced, which is beneficial to improving the uniformity of the micro-hole etching of the electrode E, and further improving the production efficiency and the quality of the electrode.

[0047] It can be understood that the distance between the support plate 230 and the liquid discharge port H determines the distance between the electrode E and the liquid discharge port H. By increasing the height of the support plate 230, the distance between the liquid discharge port H and the electrode E can be increased. In one specific example, the support plate 230 can be a liftable support plate, for example, the etching device includes a driving assembly (not shown in the figure) arranged below the support plate 230, and the driving assembly is configured to drive the support plate 230 to move, thereby changing the distance between the support plate 230 and the liquid discharge port H.

[0048] Here, the preset value can be reasonably set according to the actual etching device while ensuring the process, safety and operation feasibility, and the present disclosure has no special limitation thereon. In one specific example, the preset value is greater than or equal to 100 mm. Figure 5 An example in which the etching tank bottom wall is provided with one liquid discharge port is shown. However, the number of liquid discharge ports provided on the etching tank bottom wall can also be multiple, and examples in which the etching tank bottom wall is provided with multiple liquid discharge ports will be described in detail below, which will not be repeated here.

[0049] Figure 6is a schematic view of a second etching device according to an embodiment of the present disclosure, Figure 7 is a top view of an etching tank bottom wall provided with a plurality of drainage openings according to an embodiment of the present disclosure, and the following will be described in combination with Figure 6 and Figure 7 The second etching device according to the embodiments of the present disclosure is exemplarily described.

[0050] Referring to Figure 6 , the etching device 300 includes an etching tank 310, a drainage pipeline 320, a drainage pump 340 and a support plate 330. The etching tank 310 has a bottom wall 310a and a side wall 310b. The etching tank 310, the drainage pipeline 320, the drainage pump 340 and the support plate 330 can be referred to the related descriptions of the etching tank 210, the drainage pipeline 220, the drainage pump 240 and the support plate 230 in Figure 4 and Figure 5 . Different from the etching device 200 in Figure 4 , the bottom wall 310a of the etching tank 310 in Figure 6 is provided with a plurality of drainage openings, and the drainage pipeline 320 includes a plurality of drainage branches 321. A first end of one of the plurality of drainage branches 321 is in communication with the etching tank 310 through one of the drainage openings. In this way, by increasing the number of drainage openings and setting the drainage branch 321 corresponding to each drainage opening, the discharge of the etching liquid can be accelerated, and the etching efficiency can be further improved.

[0051] In one specific embodiment, referring to Figure 7 , the bottom wall 310a is provided with five drainage openings, which are drainage opening H0, drainage opening H1, drainage opening H2, drainage opening H3 and drainage opening H4, respectively. Of course, the number of drainage openings is not limited to Figure 7 , and can be less than five or more than five.

[0052] In some embodiments, the plurality of drainage openings are uniformly distributed on the bottom wall 310a. Exemplarily, the sizes of the plurality of drainage openings are the same, and the distances between adjacent two of the plurality of drainage openings are the same. Of course, in other embodiments, the sizes of any two of the plurality of drainage openings can be different, and the distances between adjacent two of the plurality of drainage openings can be different, and the present disclosure has no special limitation thereon. Taking the cross-sectional shape of the drainage opening in Figure 7 as an example, the size of the drainage opening can be the radius of the drainage opening or the diameter of the drainage opening. Of course, the cross-sectional shape of the drainage opening can also be other shapes.

[0053] In some embodiments, referring to Figure 6As shown, the etching device 300 further comprises a plurality of first flow adjusting components 350, which are respectively arranged on the plurality of liquid discharge branches 321; wherein the first flow adjusting components 350 are configured to adjust the flow size of the etching liquid discharged to the corresponding liquid discharge branches 321. For example, referring to Figure 6 As shown, one first flow adjusting component 350 is arranged on each liquid discharge branch 321, so that the flow size of the etching liquid discharged to each liquid discharge branch 321 can be adjusted individually. The first flow adjusting component 350 can be an automatic adjusting valve and / or a manual adjusting valve. In one specific example, the first flow adjusting component 350 can be a throttle valve.

[0054] In actual applications, the uniformity of the micro-hole etching of a plurality of micro-holes can be detected to obtain a detection result; and the flow size of the etching liquid on the corresponding liquid discharge branch can be adjusted according to the detection result. For example, when it is detected that the uniformity of the micro-hole etching in a certain region of the electrode is poorer than that in other regions after a subsequent process (for example, after the etching of the electrode is completed), the flow size of the etching liquid on the corresponding liquid discharge branch 321 can be adjusted individually according to the position of the certain region in the etching tank 310, so as to reduce the influence of the vortex generated when the liquid discharge pump 340 is pumping, thereby better etching the next (or the next batch) electrode and improving the quality of the next (or the next batch) electrode. Of course, in other examples, real-time detection can be performed during the etching of the through hole of the electrode, and the flow size on the corresponding liquid discharge branch 321 can be adjusted in time.

[0055] For example, if it is detected that the size of the micro-holes in a certain region is smaller than that of the micro-holes in other regions, the flow of the etching liquid on the corresponding liquid discharge branch 321 can be increased based on the position of the certain region in the etching tank 310; and if it is detected that the size of the micro-holes in a certain region is larger than that of the micro-holes in other regions, the flow of the etching liquid on the corresponding liquid discharge branch 321 can be reduced based on the position of the certain region in the etching tank 310. Of course, in actual applications, the flow of the etching liquid on the liquid discharge branch 321 should also consider the position where the vortex is formed and the shape of the vortex, etc.

[0056] In some embodiments, referring to Figure 6 As shown, the liquid discharge pipeline 320 further comprises a liquid discharge main line 322, which is in communication with the second end of each liquid discharge branch 321; and the etching device 300 further comprises a first flow meter 360, which is arranged on the liquid discharge main line 322; wherein the first flow meter 360 is configured to measure the flow size of the etching liquid discharged.

[0057] In the embodiments of the present disclosure, the etching solution on the multiple etching solution discharge branches 321 is collected on the etching solution discharge main line 322, and the first flow meter 360 can measure the sum of the flow rates of the etching solution on the multiple etching solution discharge branches 321 (i.e., the flow rate of the discharged etching solution), so as to determine the discharge amount of the etching solution. Here, the etching solution discharge pump 340 can be arranged on the etching solution discharge main line 322. For example, the first flow meter 360 can be arranged between the multiple etching solution discharge branches 321 and the etching solution discharge pump 340 (as shown in FIG. 3B); or the etching solution discharge pump 340 can be arranged between the multiple etching solution discharge branches 321 and the first flow meter 360. Figure 6

[0058] In some embodiments, referring to FIG. 3B, the etching device 300 further includes a liquid supply pipeline 370 and a second flow meter 380, the liquid supply pipeline 370 is in communication with the top of the etching tank 310, and the second flow meter 380 is arranged on the liquid supply pipeline 370; wherein the liquid supply pipeline 370 is configured to discharge the etching solution; and the second flow meter 380 is configured to measure the flow rate of the discharged etching solution. Here, the liquid supply pump 390 can be arranged on the liquid supply pipeline 370. Figure 6

[0059] In the embodiments of the present disclosure, one end of the liquid supply pipeline 370 can be in communication with a liquid supply device (for example, a liquid supply barrel filled with etching solution), and the other end of the liquid supply pipeline 370 can be in communication with the top of the etching tank 310. The etching solution can be discharged into the etching tank 310 through the liquid supply pipeline 370, and the second flow meter 380 can measure the flow rate of the discharged etching solution, so as to determine the discharge amount of the etching solution.

[0060] In addition, during the etching of the through holes, it is necessary to ensure that the flow rates of the suction and the liquid supply are equivalent, that is, the flow rate of the discharged etching solution is basically the same as the flow rate of the discharged etching solution. Here, basically the same can mean that the discharge amount of the etching solution and the discharge amount of the etching solution are exactly the same, or there is a deviation between the discharge amount of the etching solution and the discharge amount of the etching solution, but the deviation is within the allowable error range.

[0061] In some embodiments, the discharge amount of the etching solution and / or the discharge amount of the etching solution can be adjusted according to the flow rate of the discharged etching solution and the flow rate of the discharged etching solution, so as to ensure that the flow rates of the suction and the liquid supply are equivalent.

[0062] In some embodiments, the liquid supply pipeline 370 includes a liquid supply main line and multiple liquid supply branches (not shown in the figure), the first end of each of the multiple liquid supply branches is in communication with the top of the etching tank 310, and the liquid supply main line is in communication with the second end of each of the multiple liquid supply branches; and the etching device 300 further includes multiple second flow adjustment assemblies, the multiple second flow adjustment assemblies are respectively arranged on the multiple liquid supply branches; wherein the second flow adjustment assembly is configured to adjust the flow rate of the etching solution discharged into the corresponding liquid supply branch.

[0063] ​​Exemplarily, a second flow regulating component is arranged on each liquid supply branch, so that the flow of etching liquid into each liquid supply branch can be individually regulated. The second flow regulating component can be an automatic regulating valve and / or a manual regulating valve. In a specific example, the second flow regulating component can be a throttle valve. In the embodiments of the present disclosure, by arranging multiple liquid supply branches, the uniformity of liquid supply to each region of the electrode can be ensured, which is conducive to further improving the uniformity of micro-hole etching.

[0064] Figure 8 is a schematic diagram of test data of the electrode after etching according to the embodiments of the present disclosure. As shown in Figure 8 , when the distance between the electrode and the bottom of the groove (i.e. the bottom wall of the etching groove) is 50 mm, 60 mm, 80 mm, 90 mm, 100 mm, 150 mm, 200 mm and 250 mm, respectively, the number of abnormal micro-holes after etching of the electrode is 280, 265, 271, 243, 112, 88, 26 and 23, respectively. It can be understood that as the distance between the electrode and the bottom of the groove increases, the number of abnormal micro-holes after etching of the electrode decreases.

[0065] It is worth noting that when the distance between the electrode and the bottom of the groove increases from 90 mm to 100 mm, the number of abnormal micro-holes after etching of the electrode significantly decreases. Therefore, the distance between the support plate and the liquid discharge port can be designed to be greater than or equal to 100 mm, i.e. the preset value is greater than or equal to 100 mm, for example, the preset value can be 100 mm, 150 mm, 200 mm or 250 mm, so that the number of abnormal micro-holes after etching of the electrode is small, and the quality of the micro-hole electrode is improved.

[0066] In the embodiments of the present disclosure, the etching device comprises an etching groove, a liquid discharge pipeline, a liquid discharge pump and a support plate. The etching groove has a bottom wall and a side wall, the bottom wall is provided with at least one liquid discharge port, the liquid discharge pipeline is in communication with the etching groove through the liquid discharge port, the liquid discharge pump is arranged on the liquid discharge pipeline, and the support plate is located in the etching groove and connected to the side wall, and the support plate is configured to carry the electrode; the electrode has a plurality of through holes, and the etching liquid etching the through holes is discharged to the liquid discharge pipeline through the liquid discharge port; the distance between the support plate and the liquid discharge port is greater than or equal to a preset value. In a first aspect, the liquid discharge pump can accelerate the discharge of the etching liquid, thereby improving the etching efficiency of the electrode; in a second aspect, by increasing the height of the support plate, the distance between the liquid discharge port and the electrode can be increased, and the influence of the vortex generated by the liquid discharge pump on the etching of the through holes can be reduced, which is conducive to improving the uniformity of the micro-hole etching of the electrode, and further improving the production efficiency and the quality of the electrode.

[0067] Based on the above-described etching device, the present embodiment provides an electrode having at least one micro-hole formed by the etching device of any of the above-described embodiments. The electrode can refer to the above-described device embodiments for relevant description, and will not be described again for brevity.

[0068] In some embodiments, the electrode is used in a dry etching device, for example, a plasma etching machine.

[0069] The above merely provides a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the present disclosure, which shall be covered within the protection scope of the present disclosure.

Claims

1. An etching device, characterized in that: include: An etching groove, the etching groove having a bottom wall and side walls, and at least one drainage port is provided on the bottom wall; a liquid discharge pipeline, the liquid discharge pipeline being connected to the etching tank through the liquid discharge port; A liquid discharge pump, the liquid discharge pump being arranged on the liquid discharge pipeline; A support plate, the support plate being located in the etching groove and connected to the side wall; wherein the support plate is configured to carry an electrode; the electrode has a plurality of through holes, and the etching liquid etching the through holes is discharged to the drainage pipeline via the drainage port; the distance between the support plate and the drainage port is greater than or equal to a preset value, and the preset value is greater than or equal to 100 mm.

2. The etching device according to claim 1, characterized in that The bottom wall is provided with a plurality of drainage ports; the drainage pipeline includes a plurality of drainage branches, and a first end of one of the plurality of drainage branches is connected to the etching groove through one of the drainage ports; The etching device further includes: a plurality of first flow regulating components, which are respectively arranged on the plurality of drainage branches; wherein the first flow regulating components are configured to regulate the flow rate of the etching liquid discharged to the corresponding drainage branch.

3. The etching device according to claim 2, characterized in that: The drainage pipeline further includes a main drainage path, which is connected to the second end of each drainage branch path; The etching device further includes: a first flow meter, which is arranged on the main drainage path; wherein the first flow meter is configured to measure the flow rate of the discharged etching liquid.

4. The etching device according to claim 3, characterized in that: The drainage pump is arranged on the drainage main path.

5. The etching device according to claim 3, characterized in that: The etching device further comprises: a liquid supply pipeline, the liquid supply pipeline being in communication with the top of the etching tank; wherein the liquid supply pipeline is configured to discharge the etching liquid; A second flow meter is provided on the liquid supply pipeline; wherein the second flow meter is configured to measure the flow rate of the discharged etching liquid.

6. The etching device according to claim 5, characterized in that: The liquid supply pipeline includes a main liquid supply line and a plurality of branch liquid supply lines, wherein a first end of each of the plurality of branch liquid supply lines is connected to the top of the etching groove, and the main liquid supply line is connected to a second end of each of the branch liquid supply lines; The etching device also includes: a plurality of second flow regulating components, which are respectively arranged on the plurality of liquid supply branches; wherein the second flow regulating components are configured to regulate the flow rate of the etching liquid discharged into the corresponding liquid supply branch.

7. The etching device according to claim 5, characterized in that: The flow rate of the etching liquid discharged is substantially the same as the flow rate of the etching liquid discharged.

8. The etching device according to claim 2, characterized in that: The plurality of liquid discharge ports are evenly distributed on the bottom wall.

9. An electrode, characterized in that The electrode has at least one micropore, and the micropore is formed by etching using the etching device according to any one of claims 1 to 8.

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