Film forming apparatus, film forming method, and method for manufacturing electronic device

Abstract

A film forming apparatus is used, the film forming apparatus having: an alignment means for aligning a substrate and a mask using a substrate mark provided on the substrate and a mask mark provided on the mask; a sealing part which enables the substrate and the mask which are aligned to each other to be in sealing connection; a film forming apparatus includes a substrate mark, a mask mark, and a film forming member that forms a film on the substrate via a mask in close contact with the substrate, the film forming apparatus including an image capturing member that captures an image of at least one of the substrate mark and the mask mark after starting the film formation by the film forming member.

Description

Technical Field

[0001] The present invention relates to a film forming apparatus, a film forming method and a method for manufacturing an electronic device. Background Art

[0002] Flat panel display devices such as organic EL display devices and liquid crystal display devices are being used. For example, an organic EL display device includes an organic EL element having a multilayer structure in which a functional layer is formed between two opposing electrodes, and the functional layer has a light-emitting layer as an organic material layer that causes light emission. The functional layer and electrode layer of the organic EL element are formed by attaching a film-forming material to a substrate such as glass via a mask in a chamber of a film-forming device. In order to improve the quality of the manufactured panel, it is required to align (adjust the position) the substrate and the mask with high precision and make them in close contact before attaching the film-forming material to the substrate.

[0003] Patent document 1 (Japanese Patent Publication No. 2019-083311) discloses that the substrate and the mask are aligned by photographing the marks on the substrate and the mask using a camera before the substrate and the mask are brought into close contact. In addition, Patent document 2 (Japanese Patent Publication No. 2011-190536) discloses that a film forming source is moved while a patterned mask is moved relative to the substrate.

[0004] Prior Art Literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2019-083311

[0007] Patent Document 2: Japanese Patent Application Publication No. 2011-190536 Summary of the invention

[0008] Problems to be solved by the invention

[0009] Here, it is known that, in particular, when an evaporation source that reaches a high temperature is used as a film forming source, the mask and the substrate may thermally expand in the film forming apparatus. As a result, even if the substrate and the mask are aligned by photographing the respective marks of the substrate and the mask using a camera before film formation, the positional relationship between the mask and the substrate may be shifted due to the influence of thermal expansion during film formation, and the actual film forming position may be shifted from the desired film forming planned position.

[0010] The present invention has been made in view of the above-mentioned problems. An object of the present invention is to provide a technique for suppressing a deviation between a desired film formation position of a substrate and an actual film formation position that may occur after the substrate and a mask are aligned.

[0011] Means for solving problems

[0012] The present invention adopts the following structure. That is, a film forming device is provided, wherein the film forming device has:

[0013] an alignment component, wherein the alignment component uses a substrate mark provided on the substrate and a mask mark provided on the mask to align the substrate with the mask;

[0014] a close contact component that brings the substrate and the mask into close contact after being aligned by the alignment component; and

[0015] a film forming member for forming a film on the substrate via the mask which is in close contact with the substrate by the close contact member,

[0016] It is characterized in that

[0017] The film forming apparatus includes an imaging unit that images at least one of the substrate mark and the mask mark after film formation by the film forming unit starts.

[0018] In addition, the present invention adopts the following structure. That is, there is provided a film forming method, wherein the film forming method uses a film forming device having an alignment member, a close contact member, a film forming member, and a photographing member, and is characterized in that:

[0019] The film forming method has the following features:

[0020] an alignment step, in which the alignment component aligns the substrate and the mask using a substrate mark provided on the substrate and a mask mark provided on the mask;

[0021] a close contact step, in which the close contact member brings the substrate and the mask into close contact after the alignment; and

[0022] a film forming step in which the film forming member forms a film on the substrate via the mask after bringing the substrate and the mask into close contact with each other,

[0023] The imaging unit images at least one of the substrate mark and the mask mark after film formation in the film formation step is started.

[0024] Effects of the Invention

[0025] According to the present invention, it is possible to provide a technique for suppressing a deviation between a desired film formation position of a substrate and an actual film formation position that may occur after the substrate and a mask are aligned. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1It is a schematic diagram of a production line of electronic devices including the film-forming apparatus of Example 1.

[0027] Figure 2 : is a cross-sectional view showing the internal structure of the film forming apparatus of Example 1.

[0028] Figure 3 It is a perspective view showing a structure for supporting the substrate of Example 1.

[0029] Figure 4 1 is a plan view showing the arrangement of the substrate and substrate marks of Example 1.

[0030] Figure 5 1 is a plan view showing the arrangement of the mask and the mask mark of Example 1.

[0031] Figure 6 This is a diagram showing the relationship between the substrate mark, the mask mark, and the imaging area in Example 1.

[0032] Figure 7 This is a flowchart for explaining the modification of the first embodiment.

[0033] Figure 8 It is a diagram for explaining expansion and deformation of the substrate S in Example 1.

[0034] Fig. 9 This is a diagram for explaining calculation of the offset amount in the first embodiment.

[0035] Fig.10 This is a flowchart illustrating the modification of the second embodiment.

[0036] Fig.11 A diagram illustrating the structure of an electronic device.

[0037] Fig.12 This is a diagram for explaining a conventional ideal film formation situation.

[0038] Fig.13 This is a diagram for explaining the influence of thermal expansion on film formation.

[0039] Fig.14 It is a diagram for explaining how the influence of thermal expansion is corrected.

[0040] Fig.15 This is a flow chart for explaining the correction of thermal expansion assumed in the prior art. DETAILED DESCRIPTION

[0041] The following are detailed descriptions of the embodiments of the present invention. However, the following embodiments are merely illustrative of the preferred structures of the present invention, and the scope of the present invention is not limited to the above structures. In addition, as for the hardware structure and software structure, processing flow, manufacturing conditions, size, material, shape, etc. of the device in the following description, unless there is a particularly specific description, it is not intended to limit the scope of the present invention to only these.

[0042] The present invention is suitable for a film forming device that forms a thin film of a film forming material on the surface of a film forming object such as a substrate by evaporation or sputtering. The present invention can be understood as a film forming device, a film forming method, and a control method of a film forming device. In addition, the present invention can also be understood as an electronic device manufacturing device and a control method thereof, and an electronic device manufacturing method. In addition, the present invention can also be understood as a program that enables a computer to execute an alignment method, a film forming method, or a control method, and a storage medium storing the program. The storage medium can also be a non-volatile storage medium that can be read by a computer.

[0043] The present invention can be preferably applied to a film forming device that forms a thin film of a desired pattern on the surface of a substrate as a film-forming object via a mask. As a material for the substrate, any material such as glass, resin, metal, silicon, etc. can be used. As a film-forming material, any material such as an organic material, an inorganic material (metal, metal oxide), etc. can be used. In addition, the "substrate" in the following description includes a substrate on which a film has been formed on the surface of the substrate material more than once. The technology of the present invention is typically applied to manufacturing devices for electronic devices and optical components. It is particularly suitable for organic electronic devices such as an organic EL display having an organic EL element and an organic EL display device using the organic EL display. In addition, the present invention can also be used in thin-film solar cells and organic CMOS image sensors.

[0044] <Example 1>

[0045] [Device structure]

[0046] (Production line for electronic devices)

[0047] Figure 1 This is a schematic plan view of the structure of an electronic device production line. Such a production line can be said to be a film forming system including a film forming device. Here, the production line of an organic EL display is described. When manufacturing an organic EL display, a substrate of a specified size is brought into the production line, and after the organic EL and metal layers are formed, post-processing steps such as cutting of the substrate are performed.

[0048] The film forming cluster 1 of the production line includes a conveying chamber 130 arranged in the center, a film forming chamber 110 and a mask storage chamber 120 arranged around the conveying chamber 130. The film forming chamber 110 includes a film forming device to perform film forming on the substrate S. The mask storage chamber 120 stores masks before and after use. Alternatively, different film forming materials may be arranged in the plurality of film forming chambers 110, respectively, and a plurality of films may be formed on the substrate using one film forming cluster 1. Alternatively, the same film forming material may be arranged in the plurality of film forming chambers 110, and films may be formed on the plurality of substrates S in parallel.

[0049] The conveying robot 140 disposed in the conveying chamber 130 carries the substrate S and the mask M into or out of the conveying chamber 130. The conveying robot 140 is, for example, a robot having a multi-jointed arm equipped with a manipulator for holding the substrate S or the mask M. Each chamber, such as the film forming chamber 110, the mask storage chamber 120, the conveying chamber 130, the path chamber 150, the buffer chamber 160, and the rotary chamber 170, is maintained in a high vacuum state during the manufacturing process of the organic EL display panel.

[0050] The film forming cluster 1 includes a path chamber 150 and a buffer chamber 160. The path chamber 150 conveys the substrate S flowing from the upstream side in the substrate conveying direction to the conveying chamber 130, and the buffer chamber 160 is used to convey the substrate S after the film forming process in the conveying chamber 130 to other film forming clusters on the downstream side. When receiving the substrate S from the path chamber 150, the conveying robot 140 of the conveying chamber 130 conveys the substrate S to one of the plurality of film forming chambers 110. In addition, the conveying robot 140 receives the substrate S after the film forming process from the film forming chamber 110 and conveys it to the buffer chamber 160. A turning chamber 170 for changing the direction of the substrate S is provided on the further upstream side of the path chamber 150 and the further downstream side of the buffer chamber 160. Alternatively, a required number of such film forming clusters 1 may be connected and arranged in a production line according to the number of layers to be stacked on the substrate.

[0051] (Film forming device)

[0052] Figure 2 1 is a cross-sectional view schematically showing the structure of the film forming apparatus. A film forming apparatus 108 is provided in each of the plurality of film forming chambers 110. In the film forming apparatus 108, a series of film forming processes are performed, including the handover of the substrate S or the mask M with the conveying robot 140, the adjustment (alignment) of the relative position of the substrate S and the mask M, the fixing of the mask and the substrate S, and film formation.

[0053] In the following description, an XYZ orthogonal coordinate system is used in which the vertical direction is set to the Z direction, but the present invention is not limited thereto. In the XYZ orthogonal coordinate system, when the substrate S is fixed to be parallel to the horizontal plane (XY plane) during film formation, the long side direction of the rectangular substrate S having long sides and short sides is set to the X direction, and the short side direction is set to the Y direction. In addition, the rotation angle around the Z axis is represented by θ.

[0054] The film forming apparatus 108 includes a vacuum chamber 200 . The interior of the vacuum chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. A substrate support unit 210 , a mask M, a mask stage 228 , a cooling plate 230 , and an evaporation source 240 are provided inside the vacuum chamber 200 .

[0055] The substrate support unit 210 is a substrate support member that supports the substrate S received from the conveying robot 140. The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate. As the mask M, for example, a metal mask having a structure in which a metal foil having an opening pattern is tensioned on a frame having high rigidity can be used. The mask stage 228 having a frame-like structure is a mask support member on which the mask M is placed. In this embodiment, after the substrate S and the mask M are aligned, the substrate S is placed on the mask and film formation is performed.

[0056] The cooling plate 230 is a plate-shaped member that contacts the surface of the substrate S on the opposite side of the surface in contact with the mask M during film formation and suppresses the temperature rise of the substrate S during film formation. By cooling the substrate S with the cooling plate 230, the deterioration and degradation of the organic material are suppressed. In addition, the cooling plate 230 can also cool the mask M in contact with the substrate S via the substrate S. Alternatively, the cooling plate 230 also serves as a magnet plate, which is used to improve the adhesion between the substrate S and the mask M during film formation by attracting the mask M with magnetic force. In addition, in order to improve the adhesion between the substrate S and the mask M, the substrate support unit 210 can also hold both the substrate S and the mask M.

[0057] The evaporation source 240 is composed of a crucible as a container for accommodating the evaporation material, a heater for heating the crucible, a shutter that can be opened and closed for controlling the scattering of the evaporation material, an evaporation rate monitor, etc. The film forming device 108 may also be provided with a driving mechanism for moving the evaporation source 240. By moving the evaporation source 240 while forming a film by the action of the driving mechanism, the film thickness on the substrate can be made uniform. The driving mechanism may also be a structure that retreats the evaporation source 240 to a predetermined position (starting position) other than when forming a film, and moves the evaporation source 240 when film forming starts. Since the film forming device of this embodiment is an evaporation device, an evaporation source 240 that heats and evaporates the film forming material (evaporation material) may be used as a film forming source. However, the film forming source is not limited to the evaporation source 240, and may be, for example, a sputtering device using a sputtering target. The evaporation source 240 is a film forming component that forms a film on the substrate via the mask M after the substrate S is in close contact with the mask M. In addition, the evaporation source 240 and the control unit 270 may be considered together as a film forming member.

[0058] A substrate Z actuator 250, a clamp Z actuator 251, and a cooling plate Z actuator 252 are provided on the upper outer side of the vacuum chamber 200. Each actuator is composed of, for example, a motor and a ball screw, a motor and a linear guide, etc. An alignment stage 280 is also provided on the upper outer side of the vacuum chamber 200.

[0059] The substrate Z actuator 250 is a driving component that moves the entire substrate support unit 210 up and down in the Z-axis direction. The clamp Z actuator 251 is a driving component that opens and closes the clamping mechanism of the substrate support unit 210. The cooling plate Z actuator 252 is a driving component that moves the cooling plate 230 up and down.

[0060] The alignment stage 280 moves the substrate S in the XY direction and rotates it in the θ direction to change the position of the substrate S and the mask M. The alignment stage 280 is an alignment component that performs the alignment process of the substrate S and the mask M. The alignment stage 280 includes a chamber fixing portion 281 connected to and fixed to the vacuum chamber 200, an actuator portion 282 for performing XYθ movement, and a connection portion 283 connected to the substrate support unit 210. In addition, the alignment stage 280 and the substrate support unit 210 can also be considered as an alignment component. In addition, a component obtained by further adding a control unit 270 to the alignment stage 280 and the substrate support unit 210 can also be considered as an alignment component.

[0061] As the actuator unit 282, an actuator having an X actuator, a Y actuator, and a θ actuator stacked may also be used. In addition, a UVW type actuator in which a plurality of actuators cooperate may also be used. Regardless of the type of the actuator unit 282, it is driven according to the control signal sent from the control unit 270, and the substrate S is moved in the X direction and the Y direction and rotated in the θ direction. If it is a stacked actuator, the control signal indicates the amount of movement of each XYθ actuator, and if it is a UVW type actuator, the control signal indicates the amount of movement of each UVW actuator.

[0062] The substrate support unit 210 is moved in XYθ with respect to the alignment stage 280. In addition, in the present embodiment, a structure for adjusting the position of the substrate S is used, but it is sufficient as long as the relative positional relationship between the substrate S and the mask M in the plane can be adjusted. Therefore, a structure for adjusting the position of the mask M or a structure for adjusting the positions of both the substrate S and the mask M may also be used.

[0063] Reference Figure 3 The structural example of the substrate support unit 210 is described with reference to a stereoscopic view. The substrate support unit 210 has a support frame 301 and a clamping member 303, wherein the support frame 301 is provided with a plurality of support members 300 for supporting each side of the substrate S, and the clamping member 303 is provided with a plurality of pressing members 302. The substrate S is sandwiched and fixed between the plurality of pressing members 302 and the plurality of support members 300. A pair of support members 300 and pressing members 302 constitute a clamping mechanism 305. However, the number and configuration of the clamping mechanism 305 are not limited thereto. In addition, instead of a clamping method, a method of placing the substrate S on a support member may be used. Alternatively, an electrostatic suction cup that adsorbs the substrate S by electrostatic force may be used.

[0064] The alignment stage 280 finely adjusts the relative position of the substrate S with respect to the mask M by transmitting the driving force to the substrate support unit 210 in the state of holding the substrate S. During the Z-direction movement of the substrate S, the substrate Z actuator 250 is driven to move the substrate support unit 210 and to raise and lower the substrate S. Thus, the substrate S and the mask M are brought closer or farther away. By further lowering the substrate S, the substrate S and the mask M can be brought into close contact, and therefore, the substrate Z actuator 250 is a close contact component for performing the close contact process between the substrate S and the mask M. In addition, the substrate Z actuator 250 and the control unit 270 can also be considered as a close contact component together. During the XYθ movement of the substrate S, the alignment stage 280 causes the substrate S to be translated along the XY direction or rotated along the θ direction. During alignment, the substrate S moves in the XY plane where the substrate is arranged, and the XY plane is roughly parallel to the plane where the mask M is arranged. That is, when the substrate S moves in XYθ, the distance between the substrate S and the mask M in the Z direction does not change, but the position of the substrate S changes in the XY plane. Thus, the substrate S and the mask M are aligned in the plane.

[0065] As a photographing component, a plurality of cameras as photographing components that perform optical photographing and generate image data are provided on the upper outer side of the vacuum chamber 200. The plurality of cameras include four first cameras 260 (alignment cameras) that use the four corners of the substrate S and the mask M as the photographing area, and two second cameras 261 (additional cameras, cameras for photographing during film formation) that use the central portions of the two sides of the substrate S and the mask M in the Y-axis direction (long side direction) as the photographing area. The first camera 260 is used for the alignment of the substrate S and the mask M. In addition, the second camera 261 is a camera added to photograph the substrate mark and the mask mark during film formation after the film formation starts (after the film formation starts). However, in addition to the second camera 261, the first camera 260 may also be used for photographing during film formation. In addition, in addition to the first camera 260, the second camera 261 may also be used for alignment.

[0066] The first camera 260 and the second camera 261 take photos through a window provided on the ceiling of the vacuum chamber 200. In addition, the alignment of the substrate S and the mask M in this embodiment is a one-stage alignment using the first camera 260. However, it is also possible to perform a two-stage alignment of rough alignment, i.e., rough alignment, and fine alignment, i.e., fine alignment. In the case of performing two-stage alignment, a camera for rough alignment with a low resolution but a wide field of view and a camera for fine alignment with a narrow field of view but a high resolution can be provided in the film forming device 108.

[0067] The control unit 270 analyzes the image data captured by the first camera 260 to obtain the position information of the first substrate mark 103 and the first mask mark 223. The control unit 270 calculates the distance and angle between the first substrate mark 103 and the first mask mark 223, and determines whether they are within a predetermined allowable range. If the distance and angle exceed the predetermined allowable range, the movement amount when the substrate S is moved in the plane is calculated. Then, based on the movement amount, the control amount of the alignment stage 280 is calculated, and the substrate S is moved in the plane.

[0068] As a control component, the control unit 270 performs the motion control of each actuator of the actuator unit 282, the shooting control and image data analysis of the camera 261, the loading and unloading control and alignment control of the substrate S and the mask M, the control of the film forming source, the control of the film forming, and other various control processes. The control unit 270 can be composed of a computer having a processor, a memory, a storage device, an I / O, etc. In this case, the function of the control unit 270 is realized by causing the processor to execute a program stored in the memory or the storage device. As a computer, a general-purpose personal computer can be used, and an embedded computer or a PLC (programmable logic controller) can also be used. Alternatively, a circuit such as an ASIC or FPGA can be used to constitute part or all of the functions of the control unit 270. In addition, the control unit 270 can be set for each film forming device, or a plurality of film forming devices can be controlled by one control unit 270.

[0069] Reference Figure 4~Figure 6 , the relationship between the marks arranged on the substrate S and the mask M and the imaging area of ​​each camera is described. Figure 4 The configuration of the substrate mark provided on the substrate S is shown. The first substrate mark 103 of the present embodiment is provided at the four corners of the substrate S. When it is necessary to distinguish each location, marks such as a to d are marked and expressed as 103a to 103d. In addition, the first substrate mark 103 of the present embodiment includes two types, namely, an adjacent mark (shown as a cross in the figure) which is located adjacent to the first mask mark 223 when correctly aligned, and an angle mark (shown as a quadrilateral in the figure) which is mainly used to calculate the offset of the angle. When it is necessary to distinguish them separately, marks such as 103a1, 103b1... are marked for the adjacent mark, and marks such as 103a2, 103b2... are marked for the angle mark. However, it is not necessary to use two types of substrate marks, and it can also be a structure that makes the substrate mark and the mask mark of either party have a specified positional relationship.

[0070] On the substrate S, two second substrate marks 104 are further provided at the center of the long side (side in the long side direction) of the substrate S. When it is necessary to distinguish between the two, they are marked with symbols and expressed as 104a~104b. The second substrate marks 104 also include two types: adjacent marks (104a1, 104b1) and angle marks (104a2, 104b2).

[0071] Figure 5 The configuration of the mask mark provided on the mask M is shown. The mask M has a structure in which a foil 222 made of a metal foil or the like is stretched over a frame 221 as a mask frame made of a metal material with high rigidity. An opening corresponding to the film formation pattern is provided in the foil 222. In addition, a rib in the shape of a cutting line when dividing the panel can be provided on the frame 221, thereby expecting an improvement in strength.

[0072] The first mask marks 223 of this embodiment are set at the four corners of the mask M. When it is necessary to distinguish each location, marks such as a to d are marked. On the mask M, two second mask marks 224 (224a, 224b) are also set in the center of the long side of the mask M.

[0073] Figure 6 2 is a perspective view showing a situation where the substrate S and the mask M are overlapped. In the present embodiment, the substrate S and the mask M are of the same size in the plan view, but are not limited thereto. In the present embodiment, one first camera 260 is disposed above each of the four corners of the substrate S and the mask M, and a total of four cameras are disposed, and are marked with symbols such as 260a to 260d as needed to distinguish them. In addition, one second camera 261 (261a, 261b) is disposed above each of the central portions of the long sides of the substrate S and the mask M.

[0074] The dotted circle shows the shooting area of ​​each camera. The shooting area of ​​the first camera 260a~260d is the first shooting area 263a~263d. The shooting area of ​​the second camera 261a~261b is the second shooting area 264a~264b. When the substrate S and the mask M are correctly aligned, as shown in the figure, in the first shooting area 263, the adjacent mark and angle mark of the first substrate mark 103 and the first mask mark 223 are each included. In the second shooting area 264, the adjacent mark and angle mark of the second substrate mark 104 and the second mask mark 224 are each included.

[0075] In this embodiment, the first substrate mark 103 and the second substrate mark 104 are formed on the substrate by photolithography. In addition, the first mask mark 223 is formed on the frame 221 of the mask M by machining. In addition, the second mask mark 224 is formed on the foil 222 of the mask M by printing. However, the method of forming the mark and the position of forming are not limited to this, and can be appropriately selected according to the material, etc. In addition, the shape and size of the mark can be appropriately set according to the performance of the camera and the ability of image analysis.

[0076] However, the number and installation locations of the alignment marks and the number, installation locations, and types of cameras are not limited to this example.

[0077] (The influence of thermal expansion and conventional offset correction assumptions)

[0078] The inventors of the present application have studied and found that there is room for improvement in the conventional film forming method. Specifically, there is the following problem: even if the substrate S and the mask M are aligned before film forming, the actual film forming position may be offset from the desired predetermined film forming position due to thermal expansion of at least one of the substrate S and the mask M during film forming.

[0079] The influence of thermal expansion of at least one of the substrate and the mask on film formation during film formation is studied. Fig.12 (a) is a perspective view showing the relationship between the marks of the substrate S and the mask M and the shooting area of ​​the camera. The figure shows a state in which the substrate S and the mask M have the same size and are aligned and overlapped. The substrate S is provided with a substrate mark 103 (103a~103d), and the mask M is provided with a mask mark 223 (223a~223d). Four cameras shoot the shooting area 263 (263a~263d). The mask M is divided into a frame 221 and a foil 222 by the inner edge 221a of the frame 221. The foil 222 is divided into an outer blank area 222a and an inner pattern forming area 222c provided with an opening for the film-forming material to pass through by a boundary line 222b shown by a dotted line.

[0080] Fig.12 (b) is a substrate S after film formation is completed when the substrate S and the mask M do not undergo thermal expansion during film formation. On the surface of the substrate S after film formation, a film 11 is formed due to the opening provided in the pattern formation region 222 c.

[0081] on the other hand, Fig.13 (a) shows a situation where the substrate S expands greatly to the lower right in the paper due to the heating of the evaporation source during film formation. Such azimuthally offset expansion may be caused by the relative positional relationship between the film formation source as a heat source and the substrate S. In this case, even if the film is formed before the film is formed, Fig.12As the film is formed, the thermal expansion advances, and the high-precision alignment shown in (a) will also Fig.13 As shown in (a), the positional relationship between the substrate mark 103 and the mask mark 223 in the shot region 263 no longer satisfies the predetermined reference.

[0082] Fig.13 (b) shows the substrate S (b) and the film 11 (b) when the deposition is performed in a state of thermal expansion. In this example, since the mask M does not thermally expand, the position and size of the pattern forming area 222c remain unchanged. Therefore, as the substrate S (b) expands to the lower right, the relative position of the film 11 (b) on the substrate S (b) shifts. Fig.13 (c) shows Fig.13 (b) The substrate S (b) is cooled. The size of the substrate S (c) shrinks due to cooling and returns to its original state. At this time, the position where the film 11 (c) is formed is offset from the desired film formation planned position.

[0083] Thus, due to the difference in thermal expansion coefficients between the substrate S and the mask M, the position of the thin film formed on the substrate S may be offset. In addition, if the tendency of expansion is different in each film forming chamber, the pattern may be offset between the layers formed on the substrate. That is, there is the following problem: Fig.12 (a) is aligned, it may not be Fig.12 (b) The ideal film formation is carried out as Fig.13 (a) The effect of thermal expansion will Fig.13 (b) ~ Fig.13 (c) The film is formed as shown.

[0084] The inventor of the present application has paid attention to and conducted research on bias correction for reducing the influence of the thermal expansion. The following describes the problems that are assumed to occur in the previous bias correction. The following describes the process of bias correction for explaining the influence of the thermal expansion that is assumed to occur during film formation and the previous technical level, with reference to the accompanying drawings. In addition, the inventor has recognized through research that the substrate S has a tendency to have a higher thermal expansion coefficient than the mask M. However, the present invention can also be applied to a case where the thermal expansion coefficient of the mask M is higher than that of the substrate S.

[0085] Fig.14 This is a diagram for explaining the contents of the corrections envisaged under the conventional technical level. Fig.14 (a) is related to Fig.13 In the same substrate S(c) as shown in (c), the position of the film 11(c) is deviated from the planned film formation position. Fig.14 (b) with Fig.12(b) is the same as the case shown in FIG. 1 , which is a substrate S (i) on which an ideal film 11 (i) is formed without thermal expansion. Fig.15 The process of FIG. 1 shows a method for reducing the effects of thermal expansion under the conventional technical level.

[0086] First, in step S101, the conveying robot 140 carries the mask M into the film forming chamber 110. In step S102, the conveying robot 140 carries the substrate S into the film forming chamber 110. In step S103, the substrate Z actuator 250 brings the distance between the substrate S and the mask M in the Z direction close to a predetermined alignment distance. In step S104, the first camera 260 captures the first imaging area 263, and detects the first substrate mark 103 and the first mask mark 223 by image analysis. In step S105, the control unit 270 calculates the movement amount of the substrate S in each direction of XYθ based on the positional relationship between the first substrate mark 103 and the first mask mark 223.

[0087] Then, in step S106, the control unit 270 corrects the movement amount based on the offset amount stored in a storage unit such as a memory. The offset amount will be described later. In addition, no correction is performed if the offset amount is not calculated. In step S107, the alignment stage 280 moves the substrate S in a plane according to the control amount in which the movement amount is corrected using the offset amount. Then, the substrate Z actuator 250 places the substrate S on the mask M and makes it close. In step S108, the evaporation source 240 starts heating and evaporates the film-forming material to form a film 11 corresponding to the opening of the mask M. In this process, the substrate S expands due to the influence of heating. In step S109, the conveying robot 140 carries the substrate S on which the film has been formed out of the film-forming chamber 110.

[0088] In step S110, the control unit 270 determines whether a certain number of substrates S have been processed using a certain mask M. If the specified number of substrates S has not been reached ("No"), the process returns to step S102 and the next substrate S is processed. If the specified number of substrates S has been reached ("Yes"), the process proceeds to step S111, and the conveying robot 140 carries the mask M out of the film forming chamber 110. In step S112, the control unit 270 determines whether the entire film forming process has been completed. If completed ("Yes"), the process ends. If not completed, the process continues.

[0089] Steps S113 to S115 are the calculation process of the offset amount. That is, in this example, the correction calculation is performed again every time the mask M is replaced. In step S113, the control unit 270 uses the first camera 260 to Fig.14(a) is used to photograph the actual film-formed substrate S (c) shown in FIG. 11 and obtain the position information of the area where the film 11 (c) is formed. For example, when the four corners of the film 11 (c) converge to the respective shooting areas of the four first cameras 260, the range of the film 11 (c) can be determined based on the positions of the four corners. In addition, a camera that can photograph the entire substrate S (c) can also be used. The control unit 270 analyzes the photographed image and calculates the coordinates (A, B) of the center of the range of the film 11 (c) based on the coordinates of the four corners.

[0090] In step S114, the control unit 270 calculates the offset of the film-forming pattern from the assumed position, which is (AC, BD) in this assumed example. In step S115, the control unit 270 calculates the offset of the substrate S during alignment based on the offset, and in this assumed example, provides an offset (CA, DB) (arrow F) to move the substrate S to the lower right to compensate for the offset to the upper left. Fig.14 The coordinates (C, D) of the center of the film 11 (i) in the ideal film formation pattern shown in (b) and the coordinates (A, B) of the center during actual film formation are preferably calculated by taking into account more complex deformation. In this case, the coordinates of the four corners of the film 11 (c) actually formed and the deformation of the sides are analyzed and reflected in the XY direction offset. In addition, it is also preferable to measure and calculate the rotation component of the substrate S during the expansion process and reflect it in the θ direction offset.

[0091] (Assumption of the problem)

[0092] In the above-mentioned example based on the previous technical level, the film pattern formed on the substrate S is analyzed when the mask M is replaced to calculate the offset, and it is reflected in the offset during alignment. Thus, even if the relative position of the substrate S and the mask M has changed since the measurement before film formation, it is desirable to reduce the position offset of film formation. However, since the mask M is replaced after the film formation of a specified number of substrates S is completed, time will pass before the position offset is reflected in the offset, and sometimes it is too late to correct it. Moreover, since the film pattern can only be analyzed using the above process after the film formation is completed, it is impossible to measure the actual thermal expansion generated during film formation, leaving room for improving the accuracy of the offset.

[0093] Here, it is also possible to consider changing the process of the above-mentioned assumption example so that the positional deviation of the film-forming pattern is measured each time the substrate S is processed. Specifically, for example, there is the following method: Fig.15After step S109 of the process, the film formation pattern on the substrate is analyzed and reflected in the offset amount of the next substrate S. However, in this case, each time a film is formed on a substrate S, it is necessary to perform various processes such as photographing, analysis, and offset calculation, so there is a problem that the production cycle time becomes longer. In addition, in this case, it is also impossible to measure the thermal expansion during film formation.

[0094] (Offset correction in this embodiment)

[0095] As a result of the inventor's in-depth research on the above problem, it was found that by photographing and analyzing the marks on the substrate S and the mask M after the film formation begins, it is possible to grasp the positional deviation during the film formation, and to perform a more real-time and accurate offset correction. The following is an explanation of the offset correction of this embodiment. The relationship between the marks arranged on the substrate S and the mask M of this embodiment and the shooting area of ​​each camera is as described above. Figure 4~Figure 6 Description of the process.

[0096] Figure 7 1 is a flowchart showing the processing of this embodiment. The same step numbers are given to the same processes as those in the above-mentioned assumption example and the description is simplified. In steps S101 to S108, the mask M and the substrate S are carried into the film forming chamber 110, pre-alignment (photographing at the alignment distance and in-plane movement) before film formation, and heating and evaporation in a close contact state are performed.

[0097] The film forming device is provided with a photographing component configured to be able to take pictures even after film forming begins. In addition, the camera that takes pictures after film forming begins may be the same as or different from the camera used for alignment. In addition, both the alignment camera and the camera other than alignment may take pictures during film forming. In step S201, the first camera 260a~260d takes pictures of the first shooting area 263a~263d, respectively, and the second camera 261a, 261b takes pictures of the second shooting area 264a, 264b, respectively. Then, image recognition processing is performed in the captured images of each shooting area to detect substrate marks and mask marks.

[0098] In step S202, the control unit 270 analyzes the positions of the marks and calculates the offset between the relative positions of the marks photographed in the alignment before film formation and the relative positions of the marks photographed during film formation. Then, the degree of thermal expansion and deformation of the substrate S and the mask M is calculated. Figure 8 The state of the substrate S and the mask M during film formation in this embodiment is shown. Here, the substrate S is deformed by thermal expansion, mainly expanding to the upper left, and deforming slightly to the right.

[0099] Furthermore, when the evaporation source is gradually heated after film formation starts, or when the evaporation source is scanned in the film formation chamber to form a film over a wide range, it is conceivable that the state will change depending on the timing of the image capture. In this case, a method of capturing images at a point in time when sufficient time has passed after film formation starts, a method of capturing images multiple times and calculating an average positional offset, etc. may also be used.

[0100] Fig. 9 This is a diagram for explaining an example of an analysis method when the control unit 270 calculates the offset amount. Fig. 9 (a) ~ Fig. 9 (d) The captured images in the first imaging areas 263 a to 263 d are enlarged respectively. Fig. 9 (e) Fig. 9 (f) The captured images in the second imaging areas 264 a and 264 b are enlarged respectively.

[0101] by Fig. 9 Taking (a) as an example, the first substrate mark 103a is configured so that the angle mark 103a2 comes in front of the extended vertical line of the cross of the adjacent mark 103a1. Then, a line is drawn from the angle mark 103a2 at an angle of 45° to intersect with the line obtained by extending the horizontal line of the adjacent mark 103a1. The intersection of the two lines at this time is set as the target Ta. When no offset correction is performed, the target Ta is the target position that the first mask mark 223a will come to during alignment. Similarly, targets Tb~Td are the target positions of the first mask marks 223b~223d during alignment when no offset correction is performed. That is, if there is no offset correction and alignment is performed with high precision, the positions of the first mask marks 223a~223d are consistent with the targets Ta~Td. Therefore, in Fig. 9 In the case of , the arrows Va to Vd indicate the offset of the first mask marks 223a to 223d from the target position.

[0102] In addition, in this embodiment, the second substrate mark 104 and the second mask mark 224 can be used not only for offset correction but also for alignment. In this case, if it is assumed that no offset correction is performed, the targets Te and Tf become the target positions of the second mask marks 224a and 224b, respectively. In this case, the arrows Ve and Vf indicate the offset amounts of the second mask marks 224a and 224b from the target positions.

[0103] Next, in step S203, the method by which the control unit 270 calculates the offset and updates the value stored in the storage unit will be described. Fig. 9 (a) ~ Fig. 9(f) The positions of the target Ta~Tf and each mask mark are analyzed in each. Thus, the offset (Va~Vf) reflecting the expansion degree and rotation angle of the substrate S can be calculated. Then, the XY offset is calculated so that the calculated offset is compensated by moving the substrate S in the direction opposite to the expansion direction of the substrate S during alignment. In addition, the θ offset is calculated so as to compensate for the rotation during thermal expansion.

[0104] In addition, the method by which the control unit 270 calculates the offset is not limited to the above case. For example, the control unit 270 calculates the coordinates of the target Ta~Td where the first mask mark should originally be located. Then, the coordinates of the intersection of the line connecting Ta and Td and the line connecting Tb and Tc are calculated as the center of gravity of the substrate S. Next, the position of the center of the straight line connecting the second mask marks 224a and 224b is calculated as the center of gravity of the mask M. Then, the offset is calculated in a manner that compensates for the offset between the coordinates of the center of gravity of the substrate S and the coordinates of the center of gravity of the mask M. In addition, as long as the camera can capture at least one of the substrate mark and the mask mark and use it for the calculation of the offset of the control unit 270, it will be sufficient.

[0105] Next, in step S109, the conveying robot 140 carries the substrate S out of the chamber. Then, in step S110, it is determined whether to continue film formation using the current mask. In the case of continuing ("yes"), return to S102 and carry in the next substrate S. The offset calculated in the above S203 is used when forming the film of the next substrate S. That is, in this embodiment, since the offset is calculated in sequence according to each substrate S, it is possible to perform alignment that reflects the state inside the film forming chamber in real time, and the accuracy of film formation is improved. In addition, in this embodiment, as the offset applied to a certain substrate S, a value calculated based on the previous substrate S is used. However, it is also possible to use a value obtained by averaging the values ​​obtained by multiple measurements before a certain substrate (for example, three times (N-3 block to N-1 block) from three blocks before a certain substrate (Nth block) to the previous block). In addition, in the case where it takes time to calculate the offset, it is also possible not to calculate it for all substrates S, but to calculate it every few blocks.

[0106] Next, in step S111 , the mask is removed. If the processing of all substrates S has not been completed ( S112 = "No"), the mask is replaced and the processing is continued. If the processing of all substrates S has been completed ( S112 = "Yes"), the entire processing is terminated.

[0107] The types, numbers or positions of the substrate marks and mask marks used to grasp thermal expansion and deformation in the above description are only examples and can be appropriately determined according to the structure of the device, the alignment accuracy as the target, etc. For example, as substrate marks, it is not necessary to use two types such as adjacent marks and angle marks. The substrate marks and mask marks can also correspond one to one in each shooting area. In addition, during alignment, either the substrate S and the mask M can be moved, or both the substrate S and the mask M can be moved. Regarding the offset amount for alignment, either the substrate S and the mask M can be given, or both the substrate S and the mask M can be given.

[0108] In the above description, the first mask mark 223 is provided on the frame 221 of the mask M, and the second mask mark 224 is provided on the foil 222 of the mask M. Even if it is a structure in which the mark is formed only on the frame like a normal mask mark, the offset amount calculation can be implemented. However, by also providing the mask mark on the foil 222, the thermal expansion and deformation of the foil 222 can be directly measured. As a result, the following further effect can be obtained: even if the expansion rate and deformation mode of the frame 221 and the foil 222 are different due to the difference in materials of the frame 221 and the foil 222, the degree of thermal expansion and deformation can be accurately grasped and reflected in the offset amount.

[0109] (Effect)

[0110] According to the processing flow of the present embodiment described above, since the position offset is grasped and the offset is calculated by starting to shoot after the film formation starts, the thermal expansion and deformation are measured for each substrate instead of each time the mask is replaced. Therefore, even if the position offset changes over time, a real-time offset correction can be performed. Therefore, even in the case where a plurality of (e.g., dozens of) substrates are processed using one mask, the offset can be changed at any time, and the influence of the position offset changing over time can be suppressed. In addition, according to the present embodiment, the actual thermal expansion and deformation can be reflected during the film formation instead of after the film formation is completed. Therefore, in the film forming device, even if at least one of the substrate and the mask has thermal expansion during the aligned film formation, the offset between the desired film forming position and the actual film forming position can be reduced. Moreover, since there is no need to measure separately after the film formation, the production cycle time will not be extended.

[0111] <Example 2>

[0112] In this embodiment, specific examples of imaging during film formation, calculation of shift amounts, and calculation of offset amounts are described. The device configuration of this embodiment is basically the same as that of the first embodiment, and the same reference numerals are used for the same configurations as those of the first embodiment, and description thereof is omitted.

[0113] Fig.10 is a flowchart for explaining the processing of this embodiment. This figure shows a flowchart for explaining the process of completing the equivalent Figure 7 The flow of the method for calculating the offset correction amount starts at the time of the processing of step S107.

[0114] In step S301, the control unit 270 activates the first camera 260 and the second camera 261. Afterwards, the data of the captured images obtained by each camera is input to the control unit 270 at any time. In step S302, the control unit 270 determines whether the corresponding substrate mark and mask mark are detected in the captured images of each camera. Figure 7 In the alignment process of the process, each mark will enter the shooting area, but due to some reasons, there may be a deviation, so such a determination is made in S301~S302. If all the marks can be detected, it proceeds to step S303. On the other hand, if no mark can be detected, the detection is attempted again. In addition, the control unit 270 may also adjust the position of the substrate S using the substrate Z actuator 250 and the alignment stage 280, notify the user of an alarm, etc. before attempting to detect again.

[0115] In step S303, the evaporation source 240 starts to be heated and film formation starts. In this process, it is assumed that at least one of the substrate S and the mask M will expand due to the heating and cause coordinate shift of the mark. In addition, it is assumed that the film formation in this process is a process in which the evaporation source 240 is scanned in the plane of the lower part of the film forming chamber 110 while forming a film in a large range. In step S304, the control unit 270 calculates the coordinate value of each mark (the first substrate mark 103, the first mask mark 223, the second substrate mark 104, and the second mask mark 224) based on the images captured by the first camera 260 and the second camera 261.

[0116] In step S305, the control unit 270 calculates the offset of each mark and stores it in the storage unit. For example, the offset can be calculated by comparing the coordinate value of the mark in the image captured during alignment with the coordinate value of the mark in the image captured at the time of this step. In step S306, the control unit 270 determines whether the offset of each mark is less than a prescribed allowable range, i.e., a prescribed threshold, or determines whether it is greater than a prescribed threshold. If it is within the allowable range (less than the threshold), the process proceeds to step S307 and film formation continues.

[0117] On the other hand, if the offset of any mark is outside the allowable range (above the threshold), the process proceeds to step S308 and notifies the user of a warning. The warning notification may be any method such as image display, light, sound, etc. Next, in step S309, the film forming scan is temporarily stopped. Thus, through the action of the cooling plate 230 and the change in the temperature condition in the film forming chamber, it is expected that the offset will converge within the allowable range and film forming can be restarted. In addition, a step for determining the offset amount may be set again after this step, and the process may be terminated if the offset does not converge. In step S310, the control unit 270 determines whether all areas of the substrate S where the film should be formed have been film formed. If the determination is "no", the film forming scan is continued, and the calculation and determination of the offset amount are continued at a predetermined interval. On the other hand, if the film forming is completed (S310="Yes"), the process proceeds to step S311 and the offset amount applied to the next substrate S is calculated. As a method for calculating the offset amount, there is, for example, a method using the maximum value of the offset amount calculated multiple times and a method using the average value. According to this process, as in Example 1, the influence of thermal expansion during film formation can be used as the bias calculation for the next film formation. In addition, when the offset is above the allowable value, the film formation can be temporarily stopped and a warning can be displayed. Therefore, the influence of thermal expansion of at least one of the substrate and the mask on the film formation can be reduced.

[0118] <Modification>

[0119] In the above-mentioned embodiments, the positional deviation is grasped and the offset is calculated by photographing the mark during film formation rather than after film formation is completed, thereby making it possible to perform a highly real-time offset correction that reflects the influence of heating. In particular, by providing a second camera 261 that photographs a second mask mark 224 provided on the foil portion of the mask M in addition to a first camera 260 that photographs a first mask mark 223 provided on the frame of the mask M that is usually used in alignment, it is possible to grasp the deformation of the foil with high accuracy and use it for calculation of the offset. The presence of such a second camera 261 can help grasp not only the deformation during film formation, but also the offset when the substrate S and the mask M are in close contact.

[0120] For example, in addition to Figure 7In addition to the alignment at the alignment distance such as S103 to S106 of S107, the following pre-film formation measurement is sometimes performed: the substrate is placed and closely attached to the mask M in S107, and the image is taken again, and it is determined whether a deviation caused by the close-attachment action has occurred. In such pre-film formation measurement, by using the image taken by the additional second camera 261, it is possible to grasp the deformation of the foil 222 instead of the deformation of the frame 221. That is, even if there is a situation where the foil 222 stretched on the frame 221 partially deforms differently from the frame 221, by analyzing the image of the second camera 261, it is possible to grasp the situation, and it is possible to take measures such as re-attachment or notify the user of the abnormality.

[0121] <Method for manufacturing electronic device>

[0122] Next, an example of a method for manufacturing an electronic device using the film-forming apparatus of this embodiment will be described. Hereinafter, as an example of an electronic device, the structure of an organic EL display device is shown, and an example of a method for manufacturing the organic EL display device is described.

[0123] First, the organic EL display device to be manufactured will be described. Fig.11 (a) is an overall view of the organic EL display device 700. Fig.11 (b) shows the cross-sectional structure of a pixel.

[0124] like Fig.11 As shown in (a), in the display area 701 of the organic EL display device 700, a plurality of pixels 702 having a plurality of light-emitting elements are arranged in a matrix. The details will be described later, but the light-emitting elements each have the following structure, which has an organic layer sandwiched by a pair of electrodes. In addition, the pixel mentioned here refers to the smallest unit that can display the desired color in the display area 701. In the case of the organic EL display device of this embodiment, the pixel 702 is formed by a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that show different light. The pixel 702 is mostly composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but it can also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, as long as it is at least one color, and it is not particularly limited.

[0125] Fig.11 (b) Yes Fig.11Schematic diagram of partial cross-section at line BB of (a). Pixel 702 is composed of a plurality of light-emitting elements, each of which has a first electrode (anode) 704, a hole transport layer 705, any one of light-emitting layers 706R, 706G, and 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. The hole transport layer 705, the light-emitting layers 706R, 706G, 706B, and the electron transport layer 707 are equivalent to organic layers. In addition, in this embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, and 706B are formed into patterns corresponding to light-emitting elements (sometimes also referred to as organic EL elements) that emit red light, green light, and blue light, respectively.

[0126] In addition, the first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 may be formed in a manner shared by a plurality of light-emitting elements 702R, 702G, and 702B, or may be formed for each light-emitting element. In addition, in order to prevent the first electrode 704 and the second electrode 708 from being short-circuited due to foreign matter, an insulating layer 709 is provided between the first electrode 704. Furthermore, since the organic EL layer is degraded by moisture and oxygen, a protective layer 710 is provided to protect the organic EL element from moisture and oxygen.

[0127] exist Fig.11 In (b), the hole transport layer 705 and the electron transport layer 707 are shown as one layer, but they may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. In addition, a hole injection layer having an energy band structure that allows smooth injection of holes from the first electrode 704 to the hole transport layer 705 may be formed between the first electrode 704 and the hole transport layer 705. Similarly, an electron injection layer may be formed between the second electrode 708 and the electron transport layer 707.

[0128] Next, an example of a method for manufacturing an organic EL display device will be described in detail.

[0129] First, a substrate (mother glass) 703 on which a circuit (not shown) for driving the organic EL display device and a first electrode 704 are formed is prepared.

[0130] Acrylic resin is formed by spin coating on the substrate 703 having the first electrode 704 formed thereon, and the acrylic resin is patterned by photolithography to form an opening at the portion where the first electrode 704 is formed, and an insulating layer 709 is formed. The opening corresponds to a light emitting region where the light emitting element actually emits light.

[0131] The substrate 703 on which the insulating layer 709 is patterned is placed on a substrate carrier provided with an adhesive member. The substrate 703 is held by the adhesive member. After the substrate 703 is carried into the first organic material film forming device and turned over, the hole transport layer 705 is formed as a common layer on the first electrode 704 of the display region. The hole transport layer 705 is formed by vacuum evaporation. Since the hole transport layer 705 is actually formed to a size larger than the display region 701, a high-precision mask is not required.

[0132] Next, the substrate 703 formed with the hole transport layer 705 is carried into the second organic material film forming apparatus. The substrate and the mask are aligned and placed on the mask, and the red light emitting layer 706R is formed on the portion of the substrate 703 where the element emitting red light is arranged.

[0133] Similar to the film formation of the light-emitting layer 706R, the light-emitting layer 706G emitting green light is formed by the third organic material film formation device, and the light-emitting layer 706B emitting blue light is formed by the fourth organic material film formation device. After the film formation of the light-emitting layers 706R, 706G, and 706B is completed, the electron transport layer 707 is formed in the entire display area 701 by the fifth film formation device. The electron transport layer 707 is formed as a common layer on the light-emitting layers 706R, 706G, and 706B of the three colors.

[0134] The substrate on which the electron transport layer 707 has been formed is moved to a metallic vapor deposition material film forming apparatus, and a second electrode 708 is formed as a film.

[0135] After that, the substrate 703 is moved to a plasma CVD device to form a protective layer 710, thereby completing the film forming process on the substrate 703. After inversion, the adhesive member is peeled off from the substrate 703, thereby separating the substrate 703 from the substrate carrier. After that, the organic EL display device 700 is completed by cutting.

[0136] From the time when the substrate 703 with the patterned insulating layer 709 is carried into the film forming apparatus until the film forming of the protective layer 710 is completed, if the substrate is exposed to an atmosphere containing moisture and oxygen, the light-emitting layer composed of the organic EL material may be degraded by moisture and oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0137] Description of Reference Numerals

[0138] 103: first substrate mark, 104: second substrate mark, 223: first mask mark, 224: second mask mark, 250: substrate Z actuator, 240: evaporation source, 260: first camera, 261: second camera, 270: control unit, 280: alignment stage, M: mask, S: substrate.

Claims

1. A film forming device, comprising: an alignment component, wherein the alignment component uses a substrate mark provided on the substrate and a mask mark provided on the mask to align the substrate with the mask; a close contact component, the close contact component makes the substrate and the mask closely contact after being aligned by the alignment component; as well as a film forming member for forming a film on the substrate via the mask which is in close contact with the substrate by the close contact member, It is characterized in that The film forming apparatus includes an imaging unit that images at least one of the substrate mark and the mask mark after film formation by the film forming unit starts.

2. The film forming device according to claim 1, characterized in that: The film forming apparatus includes a control unit that analyzes the image captured by the imaging unit, calculates an offset amount used in the alignment unit, and controls the alignment unit.

3. The film forming device according to claim 2, characterized in that: The alignment member adjusts the relative position of the substrate and the mask during the alignment so that the substrate mark and the mask mark have a predetermined positional relationship.

4. The film forming device according to claim 3, characterized in that: The control unit controls the alignment unit during the alignment so that the coordinate value of the substrate mark and the coordinate value of the mask mark have a predetermined positional relationship.

5. The film forming device according to claim 1, characterized in that: The imaging unit images at least one of the mask mark and the substrate mark provided in a region of the mask on the inner side of a mask frame in a state in which the substrate and the mask are in close contact with each other.

6. The film forming device according to claim 3, characterized in that: The control unit controls the film forming unit so as to stop film forming when the positional deviation amount between the substrate and the mask calculated based on the image captured by the imaging unit becomes equal to or larger than a predetermined threshold value.

7. The film forming device according to claim 6, characterized in that: The control unit controls the film forming unit so as to restart film formation when the positional deviation amount becomes smaller than the predetermined threshold value after becoming larger than the predetermined threshold value.

8. A film forming method, wherein the film forming method uses a film forming device including an alignment member, a close contact member, a film forming member, and a photographing member, wherein: The film forming method has the following features: an alignment step, in which the alignment component aligns the substrate and the mask using a substrate mark provided on the substrate and a mask mark provided on the mask; a close contact step, in which the close contact member brings the substrate and the mask into close contact after the alignment; as well as a film forming step in which the film forming member forms a film on the substrate via the mask after bringing the substrate and the mask into close contact with each other, The imaging unit images at least one of the substrate mark and the mask mark after film formation in the film formation step is started.

9. The film forming method according to claim 8, characterized in that: The film forming device further comprises a control component, The film forming method further includes a control step in which the control unit analyzes the image captured by the imaging unit, calculates an offset amount used in the alignment unit, and controls the alignment unit.

10. The film forming method according to claim 9, characterized in that: In the alignment step, the alignment member adjusts the relative position of the substrate and the mask during the alignment so that the substrate mark and the mask mark have a predetermined positional relationship.

11. The film forming method according to claim 10, characterized in that: In the alignment step, the control unit controls the alignment unit during the positioning so that the coordinate value of the substrate mark and the coordinate value of the mask mark have a predetermined positional relationship.

12. The film forming method according to claim 8, characterized in that: In the film forming step, the imaging unit images at least one of the mask mark and the substrate mark provided in a region of the mask on the inner side of a mask frame while the substrate and the mask are in close contact with each other.

13. The film forming method according to claim 9, characterized in that: In the film forming step, the control unit controls the alignment unit to stop film forming when the amount of positional deviation between the substrate and the mask calculated based on the image captured by the imaging unit becomes equal to or greater than a predetermined threshold value.

14. The film forming method according to claim 13, characterized in that: In the film forming step, the control unit controls the alignment unit so as to restart film forming when the positional deviation amount becomes smaller than the predetermined threshold value after becoming equal to or greater than the predetermined threshold value.

15. A method for manufacturing an electronic device, characterized in that: The method for manufacturing an electronic device uses the film forming method according to claim 8 to manufacture an electronic device.

Images