Heating apparatus and substrate processing apparatus

Abstract

A heating device for heating a substrate placed on the heating device directly or indirectly with another member interposed therebetween, the heating device being provided with: a linear heater; and a base material having a groove which is recessed from a side opposite to the substrate side toward the substrate side and in which the heater is fixed, the groove having a contact portion on a near front side that is in contact with the heater and a non-contact portion on a back side that is not in contact with the heater.

Description

Technical Field

[0001] The present disclosure relates to a heating device and a substrate processing device. Background Art

[0002] In Patent Document 1, a stage structure is provided at the bottom of a processing container of a processing device. The stage structure has a stage for placing and supporting a semiconductor wafer. The stage includes a stage body made of thick-walled and transparent quartz and a heat sink provided on the upper surface side of the stage body and made of an opaque dielectric different from the stage body. A heating component is provided in the stage body in an embedded manner. The heating component has a heater wire made of carbon wire, which is provided in a predetermined pattern shape over substantially the entire surface of the stage body.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-54838 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The technology disclosed in the present invention improves the in-plane uniformity of heating of a substrate by a heating device that heats a mounted substrate without increasing the thickness of the heating device.

[0008] Solutions for solving problems

[0009] A technical solution disclosed herein is a heating device that heats a substrate that is directly or indirectly placed on the heating device via other components, wherein the heating device comprises: a linear heater; and a substrate having a groove that is recessed from a side opposite to the substrate side toward the substrate side and in which the heater is fixed, the groove having a contact portion that contacts the heater on the near-front side and a non-contact portion that does not contact the heater on the inner side.

[0010] Effects of the Invention

[0011] According to the technology disclosed in the present disclosure, it is possible to improve the in-plane uniformity of heating of a substrate by a heating device that heats a mounted substrate without increasing the thickness of the heating device. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is an explanatory diagram schematically showing the outline of the structure of a film forming apparatus as a substrate processing apparatus according to the present embodiment.

[0013] Figure 2 yes Figure 1 A partially enlarged cross-sectional view of the mounting platform.

[0014] Figure 3 It is a partial enlarged cross-sectional view of the substrate.

[0015] Figure 4 It is a figure for demonstrating the size of a base material.

[0016] Figure 5 It is a partially enlarged cross-sectional view showing a first modification of the mounting table.

[0017] Figure 6 It is a partially enlarged cross-sectional view showing a second modification of the mounting table.

[0018] Figure 7 It is a partially enlarged cross-sectional view showing Modification 1 of the groove.

[0019] Figure 8 It is a partially enlarged cross-sectional view showing a second modification of the groove.

[0020] Fig. 9 It is a cross-sectional view showing a third modification of the mounting table.

[0021] Fig.10 FIG. 1 is a diagram showing the results of a simulation of the temperature of a placement surface for a wafer when the placement surface is heated by a heater inside the placement table.

[0022] Fig.11 FIG. 1 is a diagram showing the results of a simulation of the temperature of a placement surface for a wafer when the placement surface is heated by a heater inside the placement table. DETAILED DESCRIPTION

[0023] In the manufacturing process of semiconductor devices, various substrate processes such as film forming process for forming a predetermined film are performed on substrates such as semiconductor wafers (hereinafter referred to as "wafers"), etc. The substrate processes are performed while the substrate is placed on a mounting surface of a mounting table in a decompressed processing container.

[0024] In addition, there is a case where the substrate processing is performed in a state where the substrate is heated. In this case, the heating of the substrate is performed by a heating device. The heating device has a substrate formed in a plate shape and a heater formed in a linear shape and arranged in the substrate, and the substrate is heated by the heater, thereby heating the substrate placed on the upper surface of the substrate as the mounting surface, or the substrate is heated via other components having a mounting surface and arranged on the substrate.

[0025] However, when heating is performed using the heating device, the portion of the substrate directly above the heater may become hotter than the surrounding area. That is, a temperature distribution having the same shape as the arrangement pattern of the heater may be generated on the substrate. As a result, the arrangement pattern of the heater may be transferred to the processing result of the substrate.

[0026] The in-plane uniformity of heating of the substrate by the heating device can be improved by making the base material having the heater disposed therein thicker, but such thickening is not preferred in terms of the responsiveness of the heater in heating the substrate.

[0027] Therefore, the technology disclosed in the present invention improves the in-plane uniformity of heating of a substrate by a heating device that heats a mounted substrate without increasing the thickness of the heating device.

[0028] Hereinafter, the heating device and substrate processing device of the present embodiment will be described with reference to the drawings. In addition, in this specification and the drawings, the same reference numerals are attached to elements having substantially the same functional structure, and repeated descriptions are omitted.

[0029] <Film forming equipment>

[0030] Figure 1 This is an explanatory diagram schematically showing the outline of the structure of a film forming apparatus as a substrate processing apparatus according to the present embodiment, and shows a part of the film forming apparatus in cross section.

[0031] Figure 1 The film forming apparatus 1 is configured to process (specifically, perform film forming processing) a wafer W as a substrate and form a predetermined film on the wafer W.

[0032] The film forming apparatus 1 includes a processing container 10 and a mounting table 30 as a heating device.

[0033] The processing container 10 has a mounting table 30 installed therein and is configured to be depressurized. The processing container 10 has, for example, a container body 10 a formed in a bottomed cylindrical shape.

[0034] The container body 10a is formed of, for example, a metal material. A side wall 11 of the container body 10a is provided with a wafer W loading and unloading port 11a, and a gate valve 12 for opening and closing the loading and unloading port 11a is provided at the loading and unloading port 11a.

[0035] An exhaust port 13a is formed in the bottom wall 13 of the container body 10a. One end of an exhaust pipe 20 is connected to the exhaust port 13a. The other end of the exhaust pipe 20 is connected to an exhaust mechanism 21 including a vacuum pump or the like.

[0036] The mounting table 30 includes a substrate 31 , a heater 32 , and a cover member 33 .

[0037] The base material 31 is formed in a plate shape (specifically, a disk shape), and in this example, the upper surface thereof constitutes a mounting surface 31 a on which the wafer W is mounted. The base material 31 is formed of a metal material having a high thermal conductivity (for example, aluminum).

[0038] The heater 32 is a sheath heater formed in a linear shape. One or more heaters 32 are arranged inside the substrate 31 (specifically, inside the groove 31b described later) along the plate surface of the substrate 31. In the case of one heater 32, for example, multiple heaters are arranged in a spiral shape when viewed from above, and in the case of multiple heaters, each is arranged in a ring shape and concentrically. Thus, the heaters 32 are arranged at equal intervals when viewed in a longitudinal section of the substrate 31. The heater 32 is connected to a heater power supply 40. The heater power supply 40 is controlled by a control unit U described later.

[0039] The cover member 33 is formed in a plate shape (specifically, a disk shape) and blocks the opening of a groove 31b described later of the base material 31. The cover member 33 is formed of, for example, a metal material (for example, aluminum).

[0040] Furthermore, a high-frequency power source 50 for supplying high-frequency power for bias is connected to the mounting table 30. Specifically, the high-frequency power source 50 is connected to the cover member 33 of the mounting table 30, for example.

[0041] Furthermore, a plurality of through holes 30a penetrating in the up-down direction are formed in the mounting table 30. A lift pin 60 described later is inserted through each of the through holes 30a.

[0042] The more detailed structure of the mounting table 30 will be described later.

[0043] The mounting table 30 is supported by, for example, a supporting member 35 provided upright at the center of the bottom of the processing container 10 .

[0044] In addition, the lifting pins 60 passing through the through holes 30a are received by the mounting table 30. The lifting pins 60 are used to transfer the wafer W between the wafer conveying device (not shown) inserted into the processing container 10 from the outside of the processing container 10 and the mounting table 30. The lifting pins 60 are configured to protrude from the mounting surface 31a of the mounting table 30 through the through holes 30a.

[0045] The processing container 10 also includes a ceiling member 10b that closes an upper opening of the container body 10a. The ceiling member 10b is connected to an upper end of the container body 10a via an insulating member 10c having electrical insulation properties.

[0046] The top wall member 10b is formed of, for example, a metal material, and has a nozzle 70 for spraying a processing gas into the processing space S. For example, gas diffusion chambers 71a and 71b are provided in the nozzle 70. The processing gas introduced into the gas diffusion chambers 70a and 70b is diffused in the gas diffusion chambers 70a and 70b in the horizontal direction, and then sprayed into the processing space S through the spray holes 72a and 72b respectively connected to the gas diffusion chambers 70a and 70b. A plurality of spray holes 72a and 72b are provided respectively. The gas diffusion chambers 70a and 70b are respectively connected to a supply pipe (not shown) having a supply source of film forming gas or the like connected to one end thereof, and the other end thereof.

[0047] A sealing member 10d such as an O-ring is provided between the top wall member 10b and the insulating member 10c to maintain airtightness.

[0048] Furthermore, a high-frequency power source 51 for supplying high-frequency power for plasma generation is connected to the ceiling wall member 10 b via a matching circuit 52 .

[0049] Furthermore, in the film forming apparatus 1, a support member 80 and a moving mechanism 81 are provided with respect to the lift pins 60. The support member 80 supports the lift pins 60. The support member 80 is formed, for example, in a circular ring shape in a plan view. The moving mechanism 81 raises and lowers the lift pins 60 by raising and lowering the support member 80. The moving mechanism 81 has a driving source (not shown) such as a motor that generates a driving force for raising and lowering the support member 80.

[0050] The film forming apparatus 1 constructed as described above is provided with a control unit U. The control unit U is composed of, for example, a computer having a processor such as a CPU and a memory, and has a program storage unit (not shown). The program storage unit stores a program for implementing the processing of the wafer W by the film forming apparatus 1. In addition, the above-mentioned program can also be stored in a storage medium that can be read by a computer, and loaded from the storage medium into the control unit U. In addition, the above-mentioned storage medium can be temporary or non-temporary.

[0051] <Placement table 30>

[0052] Next, the detailed structure of the mounting table 30 will be described. Figure 2 It is a partially enlarged cross-sectional view of the mounting table 30 . Figure 3 It is a partially enlarged cross-sectional view of the substrate 31 . Figure 4 It is a diagram for explaining the dimensions of the substrate 31 .

[0053] As described above, the mounting table 30 includes the substrate 31 , the heater 32 , and the cover member 33 .

[0054] like Figure 2 and Figure 3 As shown, the substrate 31 has a groove 31b in which the heater 32 is fixed.

[0055] In cross-sectional view, the groove 31b is formed to be recessed from the side of the substrate 31 opposite to the wafer W side toward the wafer W side, that is, recessed upward from the lower surface 31c of the substrate 31 opposite to the mounting surface 31a. In addition, although not shown in the figure, the shape of the groove 31b in a plan view is a shape corresponding to the arrangement pattern of the heater 32, for example, a spiral shape or a ring shape (specifically, a circular ring shape) centered on the center of the substrate 31.

[0056] The groove 31 b has a contact portion 100 that contacts the heater 32 on the front side, that is, the lower side, and a non-contact portion 110 that does not contact the heater 32 on the back side, that is, the upper side.

[0057] The contact portion 100 is formed, for example, so that most of it contacts the heater 32. The contact portion 100 forms a space S1 that is open near the front side and the back side, that is, the lower side and the upper side, and accommodates at least half of the heater 32. The heater 32 is positioned in the upper and lower directions inside the substrate 31 by the back side end, that is, the upper end of the contact portion 100.

[0058] The non-contact portion 110 is formed so that the entire portion does not contact the heater 32 at all. The non-contact portion 110 forms a space S2 that is open on the front side, that is, the lower side. Specifically, the space S2 is open toward the space S1.

[0059] In other words, the non-contact portion 110 is formed so as to be further recessed from the upper end portion which is the inner end portion of the contact portion 100 recessed from the lower surface of the base 31 .

[0060] In a cross-sectional view in the extending direction of the groove 31b (i.e., a longitudinal cross-sectional view), the space S2 formed by the non-contact portion 110 is, for example, rectangular in shape. In a longitudinal cross-sectional view, the space S1 formed by the contact portion 100 is, for example, a shape in which a semicircle is connected to the upper end of the rectangle.

[0061] like Figure 2 As shown, the cover member 33 blocks the lower opening of the groove 31b and is fixed to the base 31 in a state where the heater 32 is compressed between the contact portion 100 and the cover member 33. The base 31 and the cover member 33 are fixed by brazing, for example.

[0062] like Figure 3 As shown, the heater 32 is, for example, circular in cross-section when no external pressure such as compression by the cover member 33 is applied. In addition, hereinafter, "the diameter of the heater 32 in longitudinal cross-section" refers to the diameter of the heater 32 in longitudinal cross-section when no external pressure is applied.

[0063] Next, an example of the dimensions of the substrate 31 and the heater 32 in a longitudinal cross-sectional view will be described.

[0064] The diameter R of the heater 32 in longitudinal section (see Figure 4 ) is, for example, 5 mm to 10 mm. In addition, when viewed in longitudinal section, the distance L1 between adjacent heaters 32 is, for example, 1.5 times or more the diameter R of the heater 32 .

[0065] In a longitudinal cross-sectional view, a width H1 of a space S1 formed by the contact portion 100 of the groove 31 b of the substrate 31 is substantially equal to a diameter R of the heater 32 .

[0066] In a longitudinal cross-sectional view, the depth D1 of the contact portion 100 is a depth at which a portion of the heater 32 protrudes from the lower surface 31 c of the substrate 31 when the heater 32 is accommodated in the groove 31 b and the opening of the groove 31 b is not blocked by the cover member 33 .

[0067] On the other hand, in longitudinal section, the width H2 of the open portion on the near front side, i.e., the lower side, of the space S2 formed by the non-contact portion 110 is, for example, 15% or more, and more preferably 75% or more, of the diameter (i.e., the thickness) R of the heater 32. However, in order to position the heater 32 in the vertical direction within the substrate 31, the width H2 is preferably 90% or less of the diameter of the heater 32.

[0068] In addition, the depth D2 of the non-contact portion 110 is, for example, 20% to 100% of the diameter R of the heater 32 when viewed in longitudinal section.

[0069] In longitudinal section, the distance L2 from the upper end of the non-contact portion 110 to the wafer W side surface, that is, the placement surface 31a is, for example, 15% to 60% of the diameter R of the heater 32, more specifically, 1 mm to 4 mm. By setting the distance L2 to 4 mm or less, the thickness of the placement table 30 can be suppressed.

[0070] <Wafer W Processing>

[0071] Next, an example of processing of the wafer W by the film forming apparatus 1 will be described. Note that the processing of the wafer W is performed under the control of the control unit U.

[0072] (Step S1: Mounting)

[0073] First, the wafer W is placed on the placement surface 31 a of the placement table 30 .

[0074] Specifically, for example, the gate valve 12 provided at the delivery port 11a of the wafer W of the processing container 10 is opened, and a conveying mechanism (not shown) holding the wafer W is inserted into the processing container 10 of the vacuum atmosphere from a conveying chamber (not shown) of the vacuum atmosphere adjacent to the processing container 10 through the delivery port 11a. Then, the wafer W is conveyed to the top of the mounting table 30. Next, the wafer W is transferred to the raised lifting pins 60, and then the above-mentioned conveying mechanism is pulled out from the processing container 10, and the gate valve 12 is closed. At the same time, the lifting pins 60 are lowered, and the wafer W is placed on the mounting surface 31a of the mounting table 30 adjusted to a predetermined temperature by the heater 32.

[0075] As described above, the heater 32 is provided in the groove 31b, and a non-contact portion 110 exists between the surface of the substrate 31 on the wafer W side, that is, the placement surface 31a, and the heater 32. In other words, the upper portion of the heater 32 near the placement surface 31a is not in contact with the substrate 31. Therefore, heat from the upper portion of the heater 32 is hardly transferred to the placement surface 31a.

[0076] The portion of the heater 32 other than the upper portion that contacts the substrate 31 is the portion other than the upper portion. Since the portion other than the upper portion of the heater 32 is away from the mounting surface 31a, heat from this portion is easily diffused in the horizontal direction and then transferred to the mounting surface 31a.

[0077] Therefore, compared with a comparative embodiment in which the non-contact portion 110 is not present and the upper portion of the heater 32 is in contact with the substrate 31 , the heater 32 can heat the placement surface 31 a more uniformly in the plane, and the wafer W placed on the placement surface 31 a can also be heated more uniformly in the plane.

[0078] (Step S2: Film Formation)

[0079] Then, a predetermined film is formed on the wafer W.

[0080] Specifically, for example, a process gas containing a film forming gas is supplied from the shower head 70, a high frequency power for bias is supplied from the high frequency power supply 50, and a high frequency power for plasma generation is supplied from the high frequency power supply 51. Thus, the wafer W is processed by the plasma of the process gas, and a predetermined film is formed on the wafer W.

[0081] When the formation of a predetermined film is completed, the supply of the processing gas from the shower head 70 , the supply of the high frequency power for bias from the high frequency power source 50 , and the supply of the high frequency power for plasma generation from the high frequency power source 51 are stopped.

[0082] (Step S3: Send)

[0083] Then, the wafer W is carried out from the processing container 10 in the reverse order of step S1 .

[0084] (Main Effects of the Present Embodiment)

[0085] As described above, according to this embodiment, the in-plane uniformity of heating of the wafer W mounted on the mounting table 30 by the mounting table 30 can be improved. That is, the transfer of the arrangement pattern of the heater 32 to the temperature distribution of the wafer W heated by the mounting table 30 and the film formation result of the wafer W can be suppressed.

[0086] In addition, according to the present embodiment, the above-mentioned in-plane uniformity of heating can be improved without increasing the thickness of the mounting table 30. Therefore, the following problems caused by increasing the thickness of the mounting table 30 can be suppressed:

[0087] · A decrease in the responsiveness of the heater 32 to heating the wafer W;

[0088] Deterioration in operability of the mounting table 30;

[0089] · The cost of the mounting table 30 is increased;

[0090] Increased energy consumption.

[0091] In addition, since the thickness of the mounting table 30 can be suppressed, the space inside the processing container 10 where the mounting table 30 is installed can be effectively utilized.

[0092] (Modification 1 of the mounting table)

[0093] Figure 5 It is a partially enlarged cross-sectional view showing a first modification of the mounting table.

[0094] In the above example, the mounting table 30 is the heating device itself of the present disclosure, and the upper surface of the base 31 of the mounting table 30 serves as the mounting surface 31 a for the wafer W. The wafer W is directly mounted on the mounting table 30 , ie, the heating device.

[0095] In contrast, Figure 5 The mounting table 30A includes a heating device 200 having a substrate 31, a heater 32, and a cover member 33, and an electrostatic holding disk 210 as an example of another member having a mounting surface 211 on which the wafer W is mounted. The electrostatic holding disk 210 is fixed to the surface of the heating device 200 on the side of the wafer W, that is, the upper surface 201 of the substrate 31. In other words, the wafer W is indirectly mounted on the heating device 200 via the electrostatic holding disk 210. Thus, the heating device 200 heats the wafer W indirectly mounted on the heating device 200.

[0096] In addition, the electrostatic holding disk 210 is a member that uses electrostatic force to adsorb and hold the wafer W placed on the mounting surface 211. Specifically, it is a member in which an electrode for electrostatic adsorption is embedded inside a plate-shaped member formed of a dielectric material, that is, a plate-shaped member with low thermal conductivity. Therefore, the temperature distribution of the mounting surface 211 of the electrostatic holding disk 210 becomes the same shape as the arrangement pattern of the heater 32, and there is a situation where the temperature of the wafer W placed on the mounting surface 211 becomes non-uniform in the plane. In contrast, in this example, the heating device 200 has the above-mentioned groove 31b in the substrate 31, so that the in-plane uniformity of heating of the wafer W indirectly placed on the heating device 200 by the heating device 200 can be improved.

[0097] (Modification 2 of the mounting table)

[0098] Figure 6 It is a partially enlarged cross-sectional view showing a second modification of the mounting table.

[0099] Figure 6 The mounting table 30B is provided with an exhaust passage 300 on the substrate 31B. One end of the exhaust passage 300 is connected to the space S2 formed by the non-contact portion 110 of the groove 31b, and the other end of the exhaust passage 300 is connected to an exhaust mechanism 311 having a vacuum pump or the like via an exhaust pipe 310. Thus, the space S2 can be exhausted. Therefore, the upper portion of the heater 32 and the non-contact portion 110 of the groove 31b can be vacuum-insulated. Therefore, it is possible to further suppress the portion of the substrate 31B located directly above the upper portion of the heater 32 from being locally heated. Therefore, according to this example, the in-plane uniformity of the heating of the wafer W mounted on the mounting table 30B by the mounting table 30B can be further improved.

[0100] Furthermore, the present inventors have confirmed through simulation that when the space S2 is exhausted, if the distance L3 from the deepest portion of the groove 31 b to the heater 32 is 1 mm or more, heat transfer from the upper portion of the heater 32 to the substrate 31B can be suppressed.

[0101] (Variation example of groove)

[0102] Figure 7 and Figure 8 These are partially enlarged cross-sectional views showing Modification 1 and Modification 2 of the groove in which the heater 32 is fixed, respectively.

[0103] In the above example, the width in the horizontal direction of the space S2 formed by the non-contact portion 110 of the groove 31 b in a longitudinal cross-section is the same between the lower open portion and the upper open portion.

[0104] In contrast, it can also be, Figure 7As shown, the width of the space S2 formed by the non-contact portion 401 of the groove 400 of the substrate 31C in the horizontal direction when viewed in a longitudinal section is larger in the upper portion than in the lower open portion. As a result, the heat from the heater 32 can be further diffused in the horizontal direction and then transferred to the mounting surface 31a, and the in-plane uniformity of heating can be further improved.

[0105] In this case, when viewed in longitudinal section, the width H3 of the upper portion of the space S2 is such that the distance L3 between adjacent spaces S2 is greater than the diameter of the heater 32, and is preferably 120% or less of the diameter R of the heater 32. Thus, it is possible to suppress the transfer of the formation pattern of the space S2 when viewed from above to the temperature distribution of the wafer W heated by the mounting table having the groove 400.

[0106] Alternatively, it can be, Figure 8 As shown, the space S2 formed by the non-contact portion 501 of the groove 500 of the substrate 31D is formed so that the width in the horizontal direction increases toward the inner side, that is, the upper side when viewed in longitudinal section. In this example, the heat from the heater 32 can be further diffused in the horizontal direction and then transferred to the mounting surface 31a, which can further improve the in-plane uniformity of heating.

[0107] In this case, when viewed in longitudinal section, the width H4 of the upper end of the space S2 is such that the distance L3 between adjacent spaces S2 is greater than the diameter R of the heater 32, and is preferably less than 120% of the diameter R of the heater 32. Thus, it is possible to suppress the transfer of the formation pattern of the space S2 when viewed from above to the temperature distribution of the wafer W heated by the mounting table having the groove 500.

[0108] (Modification 3 of the mounting table)

[0109] Fig. 9 It is a cross-sectional view showing a third modification of the mounting table.

[0110] In the above example, the heater 32 is a sheath heater, but in this example, the heater 32E is a cartridge heater formed in a linear shape.

[0111] The mounting table 30C of this example includes a supporting member 600, a substrate 31E, and a heater 32E which is a cartridge heater.

[0112] The support member 600 is vertically disposed at the center of the bottom of the processing container 10 to support the substrate 31E.

[0113] The lower portion of the heater 32E is fixed in the support member 600 , and the upper portion thereof is fixed in the base material 31E.

[0114] The substrate 31E has a groove 610, and the upper portion of the heater 32E is fixed inside the groove 610. The groove 610 has a contact portion 611 on the lower side that contacts the heater 32E, and a non-contact portion 612 on the upper side that does not contact the upper portion of the heater 32E.

[0115] When the heater 32E is provided as in this example, there is a case where only the central portion of the placement surface 31a becomes locally hot. However, in this example, the non-contact portion 612 is provided on the upper side of the groove 610 in which the heater 32E is fixed. Therefore, the heat from the center of the upper end surface of the heater 32E is hardly transferred to the placement surface 31a. Therefore, according to this example, it is possible to suppress the case where only the central portion of the placement surface 31a becomes locally hot.

[0116] (Test example)

[0117] The present inventors have simulated the temperature of a placement surface for a wafer when the placement surface is heated by a heater inside the placement table. Fig.10 and Fig.11 are graphs showing the results of the above simulation, Fig.10 The results of Test Example 1 are shown. Fig.11 The results of Test Example 2 are shown. Fig.10 and Fig.11 The temperature of the mounting surface is indicated by depth. The higher the temperature, the darker the display, and the lower the temperature, the lighter the display.

[0118] In Experimental Example 1 and Experimental Example 2, only the structure of the groove of the mounting table is different. The mounting table in Experimental Example 2 has Figure 4 In contrast, the groove of the mounting table in Test Example 1 does not have the non-contact portion 110, and the heater contacts the entire groove, and the upper portion of the heater also contacts the groove. In addition, for convenience of description, the mounting table in Test Example 1 is also described using the same reference numerals as the mounting table 30 in Test Example 2.

[0119] Main simulation conditions other than the structure of the groove 31 b are as follows.

[0120] Material of the base material 31 of the mounting table 30: Aluminum

[0121] Type of heater 32: sheath heater

[0122] The distance from the mounting surface 31a of the mounting table 30 to the upper end of the heater 32 is 3.5 mm.

[0123] · Cross-sectional shape of heater 32: circular

[0124] Diameter of heater 32: 6.5 mm

[0125] Heater 32 arrangement pattern: a circular ring centered on the center of the mounting surface 31a

[0126] Width H2 of space S2 in Test Example 2: 5 mm

[0127] Distance L2 from the upper end of the non-contact portion 110 to the placement surface 31a in Test Example 2: 1.5 mm

[0128] Distance L3 from the deepest part of the groove 31b to the upper end of the heater 32 in Test Example 2: 2 mm

[0129] like Fig.10 As shown, in Test Example 1 in which the groove 31 b in which the heater 32 is fixed does not have the non-contact portion 110 , a portion with a higher temperature is generated in a circular ring shape concentric with the mounting surface 31 a on the mounting surface 31 a .

[0130] In contrast, in Test Example 2, Fig.11 As shown, the temperature of the mounting surface 31 a is uniform over the entire surface compared to Experimental Example 1. This result also shows that the in-plane uniformity of heating the wafer W by the mounting table 30 can be improved by forming the non-contact portion 110 in the groove 31 b in which the heater 32 is fixed.

[0131] (Reference embodiment)

[0132] In the above-mentioned embodiments, the technology of the present disclosure is applied to a heating device that heats a substrate mounted directly or indirectly via another member.

[0133] The technology disclosed in the present invention can also be applied to a heating device that heats a heating target object that is in direct contact with the heating target object or indirectly through another member.

[0134] The embodiments disclosed herein are illustrative in all aspects and are not restrictive. The embodiments described above may be omitted, replaced, or modified in various forms without departing from the appended claims and the gist thereof.

[0135] Description of Reference Numerals

[0136] 30, 30A, 30B, 30C, mounting table; 31, 31B, 31C, 31D, 31E, substrate; 31b, 400, 500, 610, groove; 32, 32E, heater; 100, 611, contact portion; 110, 401, 501, 612, non-contact portion; 200, heating device; W, wafer.

Claims

1. A heating device for heating a substrate placed on the heating device directly or indirectly via another member, wherein: The heating device has: a linear heater; and a base material having a groove which is recessed from a side opposite to the substrate side toward the substrate side and in which the heater is fixed, The groove has a contact portion that contacts the heater on the front side and a non-contact portion that does not contact the heater on the back side.

2. The heating device according to claim 1, wherein: The non-contact portion forms a space that is open on the near side.

3. The heating device according to claim 2, wherein: When viewed in cross section in the extending direction of the groove, the width of the open portion on the front side of the space is equal to or greater than 75% of the thickness dimension of the heater.

4. The heating device according to claim 2 or 3, wherein: The space has a rectangular shape when viewed in a cross section in the extending direction of the groove.

5. The heating device according to claim 2 or 3, wherein: The space is formed so that the width increases toward the inner side in a cross-sectional view in the extending direction of the groove.

6. The heating device according to claim 2 or 3, wherein: The substrate has an exhaust passage communicating with the space.

7. A substrate processing device, wherein: The substrate processing apparatus comprises the heating device according to claim 1 and a processing container in which the heating device is installed.

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