Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus capable of improving in-plane uniformity of adsorption force for performing electrostatic adsorption on a ring-shaped component. The substrate processing apparatus includes a substrate support portion including an electrostatic chuck having a support surface for supporting an annular member, the support surface having a diffusion groove for diffusing a heat transfer gas into a gap between the annular member and the support surface, the diffusion groove having: an annular groove portion in which a heat transfer gas is diffused into the gap between the annular member and the support surface; an electrostatic chuck disposed concentrically with the electrostatic chuck; and a radial groove portion that communicates with the annular groove portion and is provided from the annular groove portion in a radial direction of the electrostatic chuck.

Description

Technical Field

[0001] The invention relates to a substrate processing device. Background Art

[0002] Patent document 1 discloses a carrier assembly on which a substrate is mounted, comprising a base, an electrostatic chuck arranged on the base, and an edge ring arranged around the substrate, wherein the edge ring is composed of a plurality of edge ring pieces divided in a circumferential direction, the electrostatic chuck comprises a substrate adsorption portion for adsorbing the substrate and an edge ring adsorption portion for adsorbing the plurality of edge ring pieces, and the edge ring adsorption portion comprises a heat transfer gas groove supplied with a heat transfer gas in each region for adsorbing the plurality of edge ring pieces.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2021-176186 Summary of the invention

[0004] <Problems to be Solved by the Invention>

[0005] According to one aspect, the present invention provides a substrate processing apparatus for improving the in-plane uniformity of an adsorption force for electrostatically adsorbing a ring-shaped member.

[0006] <Methods used to solve the problem>

[0007] In order to solve the above-mentioned problem, according to one aspect, a substrate processing device is provided, which includes a substrate supporting portion, wherein the substrate supporting portion includes an electrostatic chuck, and the electrostatic chuck has a supporting surface for supporting an annular component, wherein the supporting surface has a diffusion groove for diffusing a heat transfer gas into a gap between the annular component and the supporting surface, and the diffusion groove has: an annular groove portion, which is arranged concentrically with the electrostatic chuck; and a radial groove portion, which is connected to the annular groove portion and is arranged from the annular groove portion along the radial direction of the electrostatic chuck.

[0008] <Effects of the Invention>

[0009] According to one aspect, it is possible to provide a substrate processing apparatus that improves the in-plane uniformity of an electrostatic adsorption force for an annular member. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0011] Figure 2 This is an example of a top view of an electrostatic chuck showing the arrangement of an annular electrostatic electrode.

[0012] Figure 3 This is an example of a partial enlarged view of the annular region of the electrostatic chuck.

[0013] Figure 4 This is an example of a cross-sectional view of an electrostatic chuck and an edge ring cut at AA.

[0014] Figure 5 This is an example of a cross-sectional view of an electrostatic chuck and an edge ring cut at BB.

[0015] Figure 6 This is an example of a partial enlarged view of the annular region of the electrostatic chuck of the reference example.

[0016] Figure 7 This is an example of a cross-sectional view of the electrostatic chuck and edge ring of the reference example cut at CC.

[0017] Fig. 8A and Figure 8B Each is an example of a schematic diagram showing adsorption force.

[0018] Fig.9A and Fig. 9B Each of them is a graph showing an example of adsorption force.

[0019] Fig.10 This is an example of a partial enlarged view of the annular region of the electrostatic chuck.

[0020] Fig.11 This is an example of a cross-sectional view of an electrostatic chuck and an edge ring cut at DD.

[0021] Fig.12 This is an example of a cross-sectional view of an electrostatic chuck and an edge ring cut at EE. DETAILED DESCRIPTION

[0022] Hereinafter, the mode for implementing the present invention will be described with reference to the drawings. In each figure, the same component is denoted by the same reference numeral and the repeated description is omitted.

[0023] [Plasma treatment system]

[0024] Hereinafter, a configuration example of a plasma processing system will be described. Figure 1 This is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus (substrate processing apparatus) 1 .

[0025] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a showerhead 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support unit 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 includes a plasma processing space 10s defined by the showerhead 13, a side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas exhaust port for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10 .

[0026] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central area 111a for supporting a substrate W and an annular area 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular area 111b of the main body 111 surrounds the central area 111a of the main body 111 when viewed from above. The substrate W is arranged on the central area 111a of the main body 111, and the ring assembly 112 is arranged on the annular area 111b of the main body 111 in a manner of surrounding the substrate W on the central area 111a of the main body 111. Therefore, the central area 111a can also be referred to as a substrate support surface for supporting the substrate W, and the annular area 111b can also be referred to as a ring support surface for supporting the ring assembly 112.

[0027] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can be used as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a, an electrostatic electrode 1111b arranged in the ceramic component 1111a, and an annular electrostatic electrode 1111c arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. The electrostatic electrode 1111b is arranged in the central area 111a for supporting the substrate W. The annular electrostatic electrode 1111c is arranged in the annular area 111b for supporting the ring assembly 112. It should be noted that other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck and an annular insulating component, may also have an annular region 111b. In this case, the ring assembly 112 may be configured on the annular electrostatic chuck or the annular insulating component, or on both the annular electrostatic chuck and the annular insulating component. In addition, at least one RF / DC electrode coupled to a radio frequency (RF: Radio Frequency) power supply 31 and / or a direct current (DC: Direct Current) power supply 32 described later may also be configured in the ceramic component 1111a. In this case, at least one RF / DC electrode is used as a lower electrode. In the case where a bias RF signal and / or a DC signal described later is provided to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. It should be noted that the conductive components of the base 1110 and at least one RF / DC electrode may be used as multiple lower electrodes. In addition, the electrostatic electrode 1111b may also function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0028] The ring assembly 112 includes one or more ring components. In one embodiment, the one or more ring components include one or more edge rings and at least one cover ring, wherein the one or more edge rings include edge ring 112A (see FIG. Figure 4 ). The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0029] In addition, the substrate support 11 may further include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow channel 1110a, or a combination thereof. In the flow channel 1110a, a heat transfer fluid such as brine or gas flows. In one embodiment, the flow channel 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic component 1111a of the electrostatic chuck 1111. In addition, the substrate support 11 may include a heat transfer gas supply unit 51, which is configured to supply heat transfer gas to the gap between the back side of the substrate W and the central area 111a. The heat transfer gas supply unit 51 supplies heat transfer gas to the gap between the back side of the substrate W and the central area 111a via a gas flow channel that passes through the base 1110 and a supply hole 52 that passes through the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion 53 configured to supply heat to the gap between the back surface of the edge ring 112A of the ring assembly 112 and the annular region 111b (see Figure 4 ) to supply heat transfer gas. The heat transfer gas supply unit 53 supplies heat transfer gas to the edge ring 112A of the ring assembly 112 (see the heat transfer gas supply unit 53 described later) through the gas flow channel penetrating the base 1110 and the supply hole 54 penetrating the electrostatic chuck 1111. Figure 4 ) between the back side and the annular region 111b (including Figure 3 The heat transfer gas is supplied to the diffusion groove 113 (described later).

[0030] The shower head 13 is configured to introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. The shower head 13 includes at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. It should be noted that, in addition to the shower head 13, the gas introduction part may also include one or more side gas injection parts (SGI: Side Gas Injector), which are installed in one or more openings formed on the side wall 10a.

[0031] The gas supply unit 20 may include at least one gas source 21 and at least one flow control unit 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 through a corresponding flow control unit 22. Each flow control unit 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. In addition, the gas supply unit 20 may include one or more flow modulation devices, which are used to modulate or pulse the flow of at least one process gas.

[0032] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma is formed from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can be used as at least a part of a plasma generating unit configured to generate plasma from one or more process gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be introduced into the substrate W.

[0033] In one embodiment, the RF power supply 31 includes a first RF generating section 31a and a second RF generating section 31b. The first RF generating section 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating section 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0034] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are provided to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0035] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating section 32a and a second DC generating section 32b. In one embodiment, the first DC generating section 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating section 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0036] In various embodiments, at least one of the first DC signal and the second DC signal may be pulsed. In this case, a series of voltage pulses are applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a voltage pulse sequence from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the voltage pulse sequence may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. It should be noted that the first DC generator 32a and the second DC generator 32b may be provided outside the RF power supply 31, or the first DC generator 32a may be provided to replace the second RF generator 31b.

[0037] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e disposed at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0038] The control unit 2 processes computer executable commands that cause the plasma processing device 1 to perform various processes described in the present disclosure. The control unit 2 can be configured to control the various components of the plasma processing device 1 to perform the various processes described herein. In one embodiment, a part or all of the control unit 2 can be included in the plasma processing device 1. The control unit 2 can include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to read a program from the storage unit 2a2 and perform various control actions by executing the read program. The program can be pre-stored in the storage unit 2a2, or it can be obtained through a medium when necessary. The obtained program is stored in the storage unit 2a2, and is read out and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media readable by the computer 2a, or it can be a communication line connected to the communication interface 2a3. The processing unit 2a1 can also be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0039] Next, use Figures 2 to 5 The annular electrostatic electrode 1111 c and the diffusion groove 113 provided in the annular region 111 b are described.

[0040] Figure 2 1 is an example of a top view of the electrostatic chuck 1111 showing the configuration of the annular electrostatic electrode 1111c. Figure 2 The top view shown is a view of the electrostatic chuck 1111 from above. Therefore, although the annular electrostatic electrode 1111c in the ceramic component 1111a cannot be directly observed, Figure 2 In FIG. 1 , the position of the annular electrostatic electrode 1111 c is indicated by dashed lines and dotted shadows.

[0041] The annular electrostatic electrode 1111c includes annular electrostatic electrodes 1111c1, 1111c2, 1111c3, and 1111c4. The annular electrostatic electrodes 1111c1 to 1111c4 have an annular shape concentric with the center of the electrostatic chuck 1111 (in other words, the center of the main body 111, and in other words, the center of the substrate support 11). In addition, starting from the center side of the electrostatic chuck 1111, the annular electrostatic electrodes 1111c1 to 1111c4 are arranged in this order.

[0042] The plasma processing device 1 is equipped with an adsorption power supply (not shown). The adsorption power supply is connected to each annular electrostatic electrode 1111c1, 1111c2, 1111c3, 1111c4, and an adsorption voltage is applied from each adsorption power supply to each annular electrostatic electrode 1111c1, 1111c2, 1111c3, 1111c4. The adsorption power supply is an alternating current power supply (AC power supply), and an alternating current voltage is applied from the adsorption power supply to each annular electrostatic electrode 1111c1, 1111c2, 1111c3, 1111c4. As a result, an adsorption force is generated between the annular electrostatic electrode 1111c and the edge ring 112A. It should be noted that AC voltages with different phases are applied between adjacent electrodes of the annular electrostatic electrodes 1111c1, 1111c2, 1111c3, 1111c4. In the following description, an example is given in which an AC voltage of the same phase is applied to the annular electrostatic electrode 1111c1 and the annular electrostatic electrode 1111c3, an AC voltage of a different phase from that of the annular electrostatic electrode 1111c1 is applied to the annular electrostatic electrode 1111c2, and an AC voltage of the same phase is applied to the annular electrostatic electrode 1111c2 and the annular electrostatic electrode 1111c4.

[0043] It should be noted that the voltage applied to the annular electrostatic electrode 1111c is not limited thereto. The adsorption power source may also be a direct current power source (DC power source), and a DC voltage is applied from each adsorption power source to each annular electrostatic electrode 1111c1, 1111c2, 1111c3, 1111c4.

[0044] Figure 3 1 is an example of a partial enlarged view of the annular region 111b of the electrostatic chuck 1111. It should be noted that Figure 3 The partially enlarged view shown is a view of the electrostatic chuck 1111 viewed from above. Figure 4 This is an example of a cross-sectional view of the electrostatic chuck 1111 and the edge ring 112A cut at AA. Figure 5 This is an example of a cross-sectional view of the electrostatic chuck 1111 and the edge ring 112A cut at line BB.

[0045] The ring support surface (annular region 111b) of the electrostatic chuck 1111 supporting the edge ring 112A is provided with a diffusion groove 113. The diffusion groove 113 diffuses the heat transfer gas into the gap between the edge ring 112A and the ring support surface. The diffusion groove 113 is a groove for diffusing the heat transfer gas (also referred to as back gas) supplied from the supply hole 54 in the circumferential direction and radial direction of the ring support surface.

[0046] The diffusion groove 113 includes an annular groove portion 113 a and a plurality of radial groove portions 113 b .

[0047] The annular groove 113a is provided on the ring support surface (annular region 111b) of the electrostatic chuck 1111 and is an annular groove concentric with the center of the electrostatic chuck 1111. Although not shown, the supply hole 54 communicates with the annular groove 113a.

[0048] The radial groove 113b is provided on the ring support surface (annular region 111b) of the electrostatic chuck 1111, and is a groove connected to the annular groove 113a and extending from the annular groove 113a in the radial direction of the electrostatic chuck 1111. Figure 3 As shown, the radial groove portion 113b is formed as a groove extending radially outward and radially inward from the annular groove portion 113a. That is, one end of the radial groove portion 113b is arranged radially inward of the annular groove portion 113a. And, the other end of the radial groove portion 113b is arranged radially outward of the annular groove portion 113a.

[0049] It should be noted that the radial groove 113b is not limited to Figure 3 The groove portion shown may also be formed as a groove extending from the annular groove portion 113a to at least one of the radially outer side and / or the radially inner side. In addition, the radial groove portion 113b may also be formed as a groove extending from the annular groove portion 113a to at least one of the outer peripheral side of the electrostatic chuck 1111 and / or the inner peripheral side of the electrostatic chuck 1111.

[0050] Thus, the heat transfer gas supplied from the supply hole 54 diffuses in the circumferential direction of the annular support surface through the annular groove 113a. Furthermore, the heat transfer gas diffuses in the radial direction of the ring support surface through the radial groove 113b. That is, the heat transfer gas diffuses over the entire ring support surface.

[0051] In addition, when the ring support surface is viewed from above, the annular groove portion 113a is provided at a position that does not overlap with the annular electrostatic electrodes 1111c (1111c1 to 1111c4). Figure 4In the example shown, the annular groove portion 113a is provided on the outer peripheral side of the annular electrostatic electrode 1111c2 and the inner peripheral side of the annular electrostatic electrode 1111c3. That is, in the radial direction, the inner peripheral side surface of the annular groove portion 113a is aligned with the outer peripheral side end surface of the annular electrostatic electrode 1111c2, or is provided on the outer side of the outer peripheral side end surface of the annular electrostatic electrode 1111c2. Furthermore, in the radial direction, the outer peripheral side surface of the annular groove portion 113a is aligned with the inner peripheral side end surface of the annular electrostatic electrode 1111c3, or is provided on the inner side of the inner peripheral side end surface of the annular electrostatic electrode 1111c3.

[0052] It should be noted that in Figure 4 In the description, the case where the annular groove portion 113a and the annular electrostatic electrode 1111c (1111c1 to 1111c4) are arranged in non-overlapping positions is described, but it is not limited to this. It can also be a partially overlapping structure. For example, in a case where the inner circumference of the annular groove portion 113a overlaps with the annular electrostatic electrode 1111c2, the overlapping area of ​​the annular groove portion 113a and the annular electrostatic electrode 1111c2 is preferably less than 17% of the area of ​​the annular electrostatic electrode 1111c2. Similarly, in a case where the outer circumference of the annular groove portion 113a overlaps with the annular electrostatic electrode 1111c3, the overlapping area of ​​the annular groove portion 113a and the annular electrostatic electrode 1111c3 is preferably less than 36% of the area of ​​the annular electrostatic electrode 1111c3.

[0053] In addition, when the annular support surface is viewed from above, the radial groove portion 113b is provided at a position overlapping with a portion of the annular electrostatic electrode 1111c (1111c1 to 1111c4). Figure 5 In the example shown, the radial groove portion 113b is provided so as to overlap with the annular electrostatic electrodes 1111c2 and 1111c3.

[0054] Here, use Figure 6 and Figure 7 An example of an electrostatic chuck 1111D of a reference example having a diffusion groove 115 will be described. Figure 6 1 is an example of a partial enlarged view of the annular region 111b of the electrostatic chuck 1111D of the reference example. Figure 6 The partially enlarged view shown is a view of an electrostatic chuck 1111D of a reference example as viewed from above. Figure 7 This is an example of a cross-sectional view of an electrostatic chuck 1111D and an edge ring 112A of a reference example cut at CC.

[0055] The electrostatic chuck 1111D of the reference example and the electrostatic chuck 1111 (see Figures 1 to 5 ) is different from the previous embodiment. The other structures are the same and repeated descriptions are omitted.

[0056] A diffusion groove 115 is provided on the ring supporting surface (annular region 111 b ) of an electrostatic chuck 1111D of a reference example that supports an edge ring 112A.

[0057] The diffusion groove 115 is provided on the ring support surface (annular region 111b) of the electrostatic chuck 1111 and is an annular groove concentric with the center of the electrostatic chuck 1111. Although not shown in the figure, the supply hole 54 communicates with the annular groove portion 113a.

[0058] Furthermore, when the ring support surface is viewed from above, the diffusion groove 115 is provided at a position overlapping with a portion of the ring-shaped electrostatic electrode 1111c (1111c1 to 1111c4). Figure 7 In the example shown, the diffusion groove 115 is arranged to overlap with the annular electrostatic electrodes 1111c2 and 1111c3.

[0059] Next, the adsorption force of the electrostatic adsorption edge ring 112A will be described by comparing the electrostatic chuck 1111 having the diffusion groove 113 and the electrostatic chuck 1111D having the diffusion groove 115 .

[0060] Here, the adsorption force F can be expressed by the following equation (1): wherein C is the composite capacitance, V is the voltage, and d is the distance between the electrodes (the distance between the annular electrostatic electrode 1111c and the edge ring 112A).

[0061] F=CV 2 / 2d (1)

[0062] As shown in equation (1), even when the voltage V applied to the annular electrostatic electrodes 1111c (1111c1 to 1111c4) is equal and the distance d between the electrodes is equal, if the combined capacitance C is different, the attraction force F is also different.

[0063] FIG. 8 is an example of a schematic diagram showing adsorption force. Fig. 8A This is an example of a schematic diagram showing the adsorption force of the electrostatic chuck 1111 having the diffusion groove 113 . Figure 8B This is an example of a schematic diagram showing the suction force of an electrostatic chuck 1111D of a reference example having a diffusion groove 115. In FIG8 , the magnitude of the suction force F (F11 to F14, F21 to F24) is schematically shown by the magnitude of the arrows.

[0064] First, the electrostatic chuck 1111D of the reference example will be described. Figure 8B As shown, the diffusion groove 115 is arranged to overlap with the annular electrostatic electrodes 1111c2 and 1111c3.

[0065] Here, the diffusion groove 115 is filled with a heat transfer gas (e.g., He gas). Therefore, in the adsorption force F22 of the annular electrostatic electrode 1111c2 and the adsorption force F23 of the annular electrostatic electrode 1111c3, the adsorption force is generated by the combined capacitance C generated by the heat transfer gas (e.g., He gas) in the diffusion groove 115 and the ceramic member 1111a between the diffusion groove 115 and the annular electrostatic electrodes 1111c2 and 1111c3.

[0066] On the other hand, in the attraction force F21 of the annular electrostatic electrode 1111c1 and the attraction force F24 of the annular electrostatic electrode 1111c4, the attraction force is generated by the synthetic capacitance C generated by the edge ring 112A and the ceramic component 1111a between the annular electrostatic electrodes 1111c1 and 1111c4.

[0067] The relative dielectric constant of the heat transfer gas (e.g., He gas) is smaller than the relative dielectric constant of the ceramic component 1111a (e.g., alumina). Therefore, the combined capacitance C of the annular electrostatic electrodes 1111c2 and 1111c3 is smaller than the combined capacitance C of the annular electrostatic electrodes 1111c1 and 1111c4. In this way, the adsorption forces F22 and F23 are smaller than the adsorption forces F21 and F24. That is, the adsorption force F is different in the area where the annular electrostatic electrode 1111c overlaps with the diffusion groove 114 and the area where it does not overlap. Therefore, the adsorption force of the electrostatic chuck 1111 becomes uneven. Due to the uneven adsorption force, the temperature control of the edge ring 112A may become unstable. In addition, due to the uneven adsorption force, micro vibration may be generated in the edge ring 112A.

[0068] In contrast, the electrostatic chuck 1111 of this embodiment will be described. Fig. 8A As shown, the annular groove portion 113a of the diffusion groove 113 is arranged in a manner that does not overlap with the annular electrostatic electrode 1111c. That is, the synthetic capacitance C in the annular electrostatic electrodes 1111c1 to 1111c4 is approximately equal. As a result, the adsorption force F11 in the annular electrostatic electrode 1111c1, the adsorption force F12 in the annular electrostatic electrode 1111c2, the adsorption force F13 in the annular electrostatic electrode 1111c3, and the adsorption force F14 in the annular electrostatic electrode 1111c4 can be made approximately equal. As a result, the in-plane uniformity of the adsorption force generated by the electrostatic chuck 1111 is improved. In addition, since the in-plane uniformity of the adsorption force is improved, the temperature control of the edge ring 112A can be stabilized. In addition, since the in-plane uniformity of the adsorption force is improved, the micro-vibration of the edge ring 112A can be suppressed.

[0069] FIG. 9 is a graph showing an example of adsorption force. Fig.9A This is an example of a graph showing the adsorption force of the electrostatic chuck 1111 having the diffusion groove 113 . Fig. 9B1 is an example of a graph showing the adsorption force of the electrostatic chuck 1111D of the reference example having the diffusion groove 115. The horizontal axis shows the phase of the voltage applied to the annular electrostatic electrode 1111c1. Here, a voltage having the same phase as the annular electrostatic electrode 1111c1 is applied to the annular electrostatic electrode 1111c3, and a voltage having a phase difference of 90 degrees from the annular electrostatic electrode 1111c1 is applied to the annular electrostatic electrodes 1111c2 and 1111c4. The vertical axis shows the adsorption force.

[0070] like Fig. 9B As shown in FIG. 1 , in the electrostatic chuck 1111D of the reference example, a difference in adsorption force occurs between the adsorption force F21 and the adsorption force F23 in the annular electrostatic electrodes 1111c1 and 1111c3 to which voltages of the same phase are applied. In addition, a difference in adsorption force occurs between the adsorption force F22 and the adsorption force F24 in the annular electrostatic electrodes 1111c2 and 1111c4 to which voltages of the same phase are applied. That is, the adsorption force of the electrostatic chuck 1111 becomes non-uniform depending on the position.

[0071] In contrast, Fig.9A As shown, in the electrostatic chuck 1111 of the present embodiment, in the annular electrostatic electrodes 1111c1 and 1111c3 to which voltages in phase with each other are applied, the adsorption forces F11 and F13 are substantially equal. In addition, in the annular electrostatic electrodes 1111c2 and 1111c4 to which voltages in phase with each other are applied, the adsorption forces F12 and F14 are substantially equal. That is, the position dependence of the adsorption force generated by the electrostatic chuck 1111 is alleviated.

[0072] Thus, the electrostatic chuck 1111 of the present embodiment having the diffusion grooves 113 can alleviate the position dependence of the suction force, thereby improving the in-plane uniformity of the suction force. In addition, since the in-plane uniformity of the suction force is improved, the uniformity of cooling of the edge ring 112A is also improved.

[0073] It should be noted that the width of the annular groove 113a is preferably narrower than the interval between the annular electrostatic electrodes 1111c2 and 1111c3. In other words, it is preferably within the width between the outer diameter of the annular electrostatic electrode 1111c2 and the inner diameter of the annular electrostatic electrode 1111c3.

[0074] The length (width in the longitudinal direction) of the radial groove 113b is preferably a length included between the outer diameter of the annular electrostatic electrode 1111c1 and the inner diameter of the annular electrostatic electrode 1111c4. In addition, the overlap amount of each annular electrostatic electrode 1111c2, 1111c3 and the diffusion groove 113 is determined according to the width of the annular groove 113a, the length (width in the longitudinal direction) of the radial groove 113b, the number of radial grooves 113b, and the width (width in the short side direction) of the radial groove 113b. The number of radial grooves 113b and the width of the radial grooves 113b (width in the short side direction) are preferably of the following dimensions, i.e., when determining the length of the radial grooves 113b (width in the length direction) and the width of the annular grooves 113a, the overlap between the annular electrostatic electrode 1111c2 and the diffusion groove 113 is less than 24.5% of the electrode area of ​​the annular electrostatic electrode 1111c2, and the overlap between the annular electrostatic electrode 1111c3 and the diffusion groove 113 is less than 45% of the electrode area of ​​the annular electrostatic electrode 1111c3.

[0075] It should be noted that in Figures 1 to 5 In the illustrated diffusion groove 113 , a case where the diffusion groove 113 has one annular groove portion 113 a is described, but the present invention is not limited thereto.

[0076] Fig.10 1 is an example of a partial enlarged view of the annular region 111b of the electrostatic chuck 1111. Fig.10 The partially enlarged view shown is a view of the electrostatic chuck 1111 viewed from above. Fig.11 This is an example of a cross-sectional view of the electrostatic chuck 1111 and the edge ring 112A cut at DD. Fig.12 This is an example of a cross-sectional view of the electrostatic chuck 1111 and the edge ring 112A cut at EE.

[0077] The ring support surface (annular region 111b) of the electrostatic chuck 1111 supporting the edge ring 112A is provided with a diffusion groove 114. The diffusion groove 114 is a groove for diffusing the heat transfer gas (also called back gas) supplied from the supply hole 54 in the circumferential direction and radial direction of the ring support surface.

[0078] The diffusion groove 114 includes an annular groove portion 114 a 1 , an annular groove portion 114 a 2 , and a plurality of radial groove portions 114 b .

[0079] The annular grooves 114a1 and 114a2 are provided on the ring support surface (annular region 111b) of the electrostatic chuck 1111 and are annular grooves concentric with the center of the electrostatic chuck 1111. It should be noted that, although not shown in the figure, the supply hole 54 is connected to either of the annular grooves 114a1 and 114a2.

[0080] The radial groove 114b is provided on the ring support surface (annular region 111b) of the electrostatic chuck 1111, and is a groove that is connected to the annular grooves 114a1 and 114a2 and extends from the annular grooves 114a1 and 114a2 in the radial direction of the electrostatic chuck 1111. That is, the radial groove 114b connects the annular groove 114a1 and the annular groove 114a2. In addition, as Fig.10 As shown, the radial groove portion 114b is formed as a groove extending radially outward and radially inward from the annular groove portions 114a1 and 114a2. That is, one end of the radial groove portion 114b is arranged radially inward of the innermost annular groove portion 114a1 among the plurality of annular groove portions 114a1 and 114a2. And, the other end of the radial groove portion 114b is arranged radially outward of the outermost annular groove portion 114a2 among the plurality of annular groove portions 114a1 and 114a2.

[0081] It should be noted that the radial groove portion 114b is not limited to Fig.10 The groove portion shown in the figure may also be formed as a groove extending from the annular groove portions 114a1, 114a2 to at least one of the radially outer side and / or the radially inner side. In addition, the radial groove portion 114b may also be formed as a groove extending from the annular groove portions 114a1, 114a2 to at least one of the outer peripheral side of the electrostatic chuck 1111 and / or the inner peripheral side of the electrostatic chuck 1111. In addition, the radial groove portion 114b is described as a groove extending from the annular groove portion 114a1 to the radially inner side, a groove connecting from the annular groove portion 114a1 to the annular groove portion 114a2, and a groove extending from the annular groove portion 114a2 to the radially outer side, but it is not limited to this, and they may also be provided separately.

[0082] Thus, the heat transfer gas supplied from the supply hole 54 diffuses in the circumferential direction of the annular support surface through the annular grooves 114a1 and 114a2. Furthermore, the heat transfer gas diffuses in the radial direction of the annular support surface through the radial grooves 114b. That is, the heat transfer gas diffuses over the entire annular support surface.

[0083] In addition, when the ring support surface is viewed from above, the annular grooves 114a1 and 114a2 are provided at positions that do not overlap with the annular electrostatic electrodes 1111c (1111c1 to 1111c4). Fig.11In the example shown, the annular groove portion 114a1 is provided on the outer circumference side of the annular electrostatic electrode 1111c1 and the inner circumference side of the annular electrostatic electrode 1111c2. That is, in the radial direction, the inner circumference side surface of the annular groove portion 114a1 is aligned with the outer circumference side end surface of the annular electrostatic electrode 1111c1, or is provided on the outer side of the outer circumference side end surface of the annular electrostatic electrode 1111c1. Furthermore, in the radial direction, the outer circumference side surface of the annular groove portion 114a1 is aligned with the inner circumference side end surface of the annular electrostatic electrode 1111c2, or is provided on the inner side of the inner circumference side end surface of the annular electrostatic electrode 1111c2.

[0084] In addition, the annular groove portion 114a2 is provided on the outer circumference side of the annular electrostatic electrode 1111c3 and the inner circumference side of the annular electrostatic electrode 1111c4. That is, in the radial direction, the inner circumference side surface of the annular groove portion 114a2 is aligned with the outer circumference side end surface of the annular electrostatic electrode 1111c3, or is provided on the outer side of the outer circumference side end surface of the annular electrostatic electrode 1111c3. And, in the radial direction, the outer circumference side surface of the annular groove portion 114a2 is aligned with the inner circumference side end surface of the annular electrostatic electrode 1111c4, or is provided on the inner side of the inner circumference side end surface of the annular electrostatic electrode 1111c4.

[0085] It should be noted that in Fig.11 In the above description, the annular grooves 114a1 and 114a2 are provided at positions that do not overlap with the annular electrostatic electrodes 1111c (1111c1 to 1111c4), but the present invention is not limited thereto. A partially overlapping structure is also possible.

[0086] Furthermore, when the ring support surface is viewed from above, the radial groove portion 114b is provided at a position overlapping with a portion of the ring-shaped electrostatic electrode 1111c (1111c1 to 1111c4). Fig.12 In the example shown, the radial groove portion 114 b is provided so as to overlap with the annular electrostatic electrodes 1111 c 1 to 1111 c 4 .

[0087] In addition, the number of annular grooves of the diffusion groove is not limited thereto, and may be three or more. For example, the diffusion groove may have an annular groove between the annular electrostatic electrode 1111c1 and the annular electrostatic electrode 1111c2, an annular groove between the annular electrostatic electrode 1111c2 and the annular electrostatic electrode 1111c3, and an annular groove between the annular electrostatic electrode 1111c3 and the annular electrostatic electrode 1111c4. In addition, the diffusion groove may also be provided with an annular groove on the inner circumference of the annular electrostatic electrode 1111c1. In addition, the diffusion groove may also be provided with an annular groove on the outer circumference of the annular electrostatic electrode 1111c4. The radial grooves are provided to connect these annular electrostatic electrodes.

[0088] In addition, the case where the annular electrostatic electrode 1111c is arranged in a plurality of circular rings is described, but it is not limited thereto. The annular electrostatic electrode 1111c may also be formed by spirally winding two electrodes. In this case, when viewed from above, the diffusion groove may also have a spiral groove portion and a plurality of radial groove portions arranged in a spiral shape between the two electrodes.

[0089] Furthermore, although the diffusion grooves 113 and 114 provided on the ring support surface (annular region 111b) supporting the edge ring 112A are described as an example, the present invention is not limited thereto. The same may also be applied to the diffusion grooves in the substrate support surface (annular region 111b) supporting the substrate W. That is, the diffusion groove provided on the substrate support surface (annular region 111b) may also include one or more annular groove portions provided in a manner not to overlap with the electrostatic electrode 1111b when viewed from above, and a plurality of radial groove portions connected to the annular groove portions.

[0090] The embodiments disclosed above include the following aspects, for example.

[0091] (Note 1)

[0092] A substrate processing device includes a substrate support portion, wherein the substrate support portion includes an electrostatic chuck, and the electrostatic chuck has a support surface for supporting an annular component, wherein:

[0093] The support surface has a diffusion groove for diffusing the heat transfer gas into the gap between the annular member and the support surface.

[0094] The diffusion tank has:

[0095] an annular groove portion, disposed concentrically with the electrostatic chuck; and

[0096] The radial groove portion is communicated with the annular groove portion and is provided along the radial direction of the electrostatic chuck from the annular groove portion.

[0097] (Note 2)

[0098] The substrate processing apparatus according to supplementary note 1, wherein:

[0099] The diffusion groove has a plurality of annular groove portions.

[0100] The radial groove portion is connected to the plurality of annular groove portions.

[0101] (Note 3)

[0102] The substrate processing apparatus according to supplementary note 1, wherein:

[0103] One end of the radial groove is disposed radially inward of the annular groove.

[0104] The other end of the radial groove portion is provided radially outward of the annular groove portion.

[0105] (Note 4)

[0106] The substrate processing apparatus according to note 2, wherein:

[0107] One end of the radial groove is disposed radially inward of the innermost annular groove among the plurality of annular grooves.

[0108] The other end of the radial groove portion is provided radially outward of the outermost annular groove portion among the plurality of annular groove portions.

[0109] (Note 5)

[0110] The substrate processing apparatus according to any one of Notes 1 to 4, wherein:

[0111] The electrostatic chuck has a plurality of electrodes for electrostatically adsorbing the annular member.

[0112] When the support surface is viewed from above, the annular groove is arranged at a position not overlapping with the electrode.

[0113] At least a portion of the radial groove portion is provided at a position overlapping with the electrode when the support surface is viewed in plan.

[0114] (Note 6)

[0115] The substrate processing apparatus according to supplementary note 5, wherein:

[0116] The substrate processing device includes a power supply for applying an alternating current voltage to the electrode.

[0117] (Note 7)

[0118] The substrate processing apparatus according to supplementary note 5, wherein:

[0119] The substrate processing device includes a power supply for applying a direct current voltage to the electrode.

[0120] (Note 8)

[0121] The substrate processing apparatus according to any one of Notes 5 to 7, wherein:

[0122] The plurality of electrodes have a concentric ring shape.

[0123] In addition, the present invention is not limited to the structures listed in the above embodiments and the combinations thereof with other elements, etc. These aspects can be changed within the scope of the present invention and can be appropriately determined according to the application form.

Claims

1. A substrate processing device, comprising a substrate support portion, wherein the substrate support portion comprises an electrostatic chuck, the electrostatic chuck having a support surface for supporting an annular member, wherein: The support surface has a diffusion groove for diffusing the heat transfer gas into the gap between the annular member and the support surface. The diffusion tank has: an annular groove portion, disposed concentrically with the electrostatic chuck; as well as The radial groove portion is communicated with the annular groove portion and is provided along the radial direction of the electrostatic chuck from the annular groove portion.

2. The substrate processing apparatus according to claim 1, wherein: The diffusion groove has a plurality of annular groove portions. The radial groove portion is connected to the plurality of annular groove portions.

3. The substrate processing apparatus according to claim 1, wherein: One end of the radial groove is disposed radially inward of the annular groove. The other end of the radial groove portion is provided radially outward of the annular groove portion.

4. The substrate processing apparatus according to claim 2, wherein: One end of the radial groove is disposed radially inward of the innermost annular groove among the plurality of annular grooves. The other end of the radial groove portion is provided radially outward of the outermost annular groove portion among the plurality of annular groove portions.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The electrostatic chuck has a plurality of electrodes for electrostatically adsorbing the annular member. When the support surface is viewed from above, the annular groove is arranged at a position not overlapping with the electrode. At least a portion of the radial groove portion is provided at a position overlapping with the electrode when the support surface is viewed in plan.

6. The substrate processing apparatus according to claim 5, wherein: The substrate processing device includes a power supply for applying an alternating current voltage to the electrode.

7. The substrate processing apparatus according to claim 5, wherein: The substrate processing device includes a power supply for applying a direct current voltage to the electrode.

8. The substrate processing apparatus according to any one of claims 5 to 7, wherein: The plurality of electrodes have a concentric ring shape.

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