Film forming apparatus, film forming method, and method for manufacturing electronic device

Abstract

The invention relates to a film forming apparatus, a film forming method, and a method for manufacturing an electronic device. In a film forming apparatus for forming a film by attaching a vapor deposition material to a substrate, a technique for correcting a measurement result of a discharge amount of the vapor deposition material based on a measurement result of a film thickness distribution in a surface of the substrate is provided. A film-forming device for forming a film by depositing a material on a substrate, the film-forming device being characterized by being provided with: an evaporation source for discharging the material; a monitoring means that measures the amount of material emitted from the evaporation source during film formation; a control unit that controls the film forming device on the basis of the output value of the monitoring unit; a measurement means for measuring the in-plane film thickness distribution of the film deposited on the substrate after film formation; and a correction section that corrects an output value of the monitoring section on the basis of the in-plane film thickness distribution.

Description

Technical Field

[0001] The present invention relates to a film forming apparatus, a film forming method, and a method for manufacturing an electronic device. Background Art

[0002] Organic EL display devices (OLEDs) are not only used in smartphones, televisions, and automotive displays, but their application areas have also expanded to VR-HMD (Virtual Reality-Head Mount Display) and the like.

[0003] In the film forming device used in the manufacture of organic EL displays, etc., it is required to improve the accuracy of the film forming of the evaporation material relative to the substrate, and it is particularly important to measure and manage the film thickness. For example, it is known to use a quartz oscillator monitor set in the film forming chamber to calculate the film thickness and film forming rate of the evaporation material, and a method of measuring the film thickness of the evaporation material formed on the substrate using an optical film thickness measuring device. In the case where the measured film thickness is insufficient, the film thickness can be compensated by additional film formation on the substrate. In addition, the measured film thickness can be compared with the target value to change the control conditions for the next film formation.

[0004] Patent document 1 discloses that in order to reduce the influence of deposition material deposited on a film thickness gauge using a quartz oscillator monitor in a film forming chamber, a correction factor (TF: Tooling Factor) of the quartz oscillator monitor is corrected based on the film thickness measured after film formation is completed.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2022-132950

[0008] Here, depending on the structure and arrangement of the substrate and evaporation source in the film forming chamber, the film thickness may become uneven within the surface of the substrate, which may affect the quality and precision of the organic EL display, etc. However, in Patent Document 1, the uniformity of the film thickness within the surface of the substrate is not fully studied. Summary of the invention

[0009] Problems to be solved by the invention

[0010] The present invention has been made in view of the above problems, and an object of the present invention is to provide a technique for correcting a measurement result of a release amount of a vapor deposition material based on a measurement result of a film thickness distribution within a surface of a substrate in a film forming apparatus that forms a film by attaching the vapor deposition material to the substrate.

[0011] Means for solving problems

[0012] The present invention adopts the following structure. That is, a film forming device, which forms a film by evaporating a material on a substrate, is characterized by comprising: an evaporation source, which releases the material; a monitoring component, which measures the amount of the material released from the evaporation source during film formation; a control component, which controls the film forming device based on the output value of the monitoring component; a measuring component, which measures the film thickness distribution in the surface of the film deposited on the substrate after film formation; and a correction component, which corrects the output value of the monitoring component based on the film thickness distribution in the surface.

[0013] The present invention also adopts the following structure. That is, a film forming method, which uses a film forming device for forming a film by evaporating a material on a substrate, characterized by comprising: a step of releasing the material using an evaporation source; a step of measuring the amount of the material released from the evaporation source during film formation using a monitoring component; a step of controlling the film forming device based on the output value of the monitoring component using a control component; a step of measuring the film thickness distribution within the surface of the film deposited on the substrate after film formation using a measuring component; and a step of correcting the output value of the monitoring component based on the film thickness distribution within the surface using a correction component.

[0014] Effects of the Invention

[0015] According to the present invention, it is possible to provide a technique for correcting a measurement result of the amount of vapor deposition material released based on a measurement result of film thickness distribution within a substrate surface in a film forming apparatus that forms a film by attaching the vapor deposition material to the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of a manufacturing apparatus for electronic devices.

[0017] Figure 2 It is a cross-sectional view showing the structure of a film forming apparatus.

[0018] Figure 3 It is a perspective plan view showing the structure of a film forming apparatus.

[0019] Figure 4 It is a cross-sectional view showing the structure of the evaporation source unit.

[0020] Figure 5 is a schematic diagram showing the structure of a film formation rate monitor.

[0021] Figure 6 It is a cross-sectional view showing the structure of the passage chamber and the film thickness measuring section.

[0022] Figure 7 It is a block diagram showing the structure of the film thickness measuring unit.

[0023] Figure 8 It is a plan view showing the structure of the film formation surface side of the substrate.

[0024] Fig. 9 This is a graph showing an example of film thickness distribution.

[0025] Fig.10 This is a control block diagram of the film forming device.

[0026] Fig.11 It is a graph showing control based on film thickness distribution.

[0027] Fig.12 It is a top view of the manufacturing apparatus of the electronic device of Example 2.

[0028] Fig.13 It is a diagram for explaining a method for manufacturing an electronic device.

[0029] Fig.14 It is a cross-sectional view showing the structure of a film forming apparatus according to a modified example.

[0030] Fig.15 It is a plan view showing the structure of the film-forming surface side of a substrate in the related art.

[0031] Description of Reference Numerals

[0032] 200: vacuum deposition device, 203: evaporation source unit, 205: film formation rate monitor, 206: film formation control unit, 310: film thickness measurement unit, S: substrate DETAILED DESCRIPTION

[0033] Hereinafter, the embodiments of the present invention will be described based on the accompanying drawings. It should be noted that the following embodiments do not limit the invention involved in the claims. A plurality of features are described in the embodiments, but these plurality of features are not all necessary features for the invention, and a plurality of features may be arbitrarily combined. Moreover, in the accompanying drawings, the same figure marks are marked for the same or similar structures, and repeated descriptions are omitted. That is, the following embodiments are merely illustrative embodiments of the preferred structures of the present invention, and the scope of the present invention is not limited to these structures. In addition, the hardware structure and software structure, processing flow, manufacturing conditions, size, material, shape, etc. of the device described below are not intended to limit the scope of the present invention to them unless there is a particularly specific description.

[0034] The present invention is understood as a film forming apparatus or a film forming method for forming a film on a substrate. The present invention is also understood as an electronic device manufacturing apparatus or an electronic device manufacturing method using the film forming apparatus or the film forming method. The present invention is also understood as a control method for the above-mentioned devices.

[0035] As the material of the substrate in the present invention, any material such as glass, resin, metal, silicon, etc. can be used. As the film-forming material, any material such as organic material, inorganic material (metal, metal oxide), etc. can be used. The present invention is particularly suitable for the inspection and evaluation of organic films formed by organic materials. The "substrate" in the following description includes a substrate on which film formation has been performed more than once on the surface of the substrate material. The technology of the present invention is typically applied to manufacturing devices for electronic devices and optical components. It is particularly suitable for organic electronic devices such as organic EL displays with organic EL elements and organic EL display devices using organic EL displays. The present invention can also be used for thin-film solar cells and organic CMOS image sensors. Moreover, the present invention can be a substrate for panel production as described above, or a substrate not for panel production (typically a glass substrate with alignment marks).

[0036] [Example 1]

[0037] In Example 1, as a basic example of the present invention, the overall structure of the device and the basic principles of film thickness measurement and control are described.

[0038] <Electronic device manufacturing equipment>

[0039] Figure 1 It is a plan view schematically showing a part of the structure of the electronic device manufacturing apparatus 1000 . Figure 1 The electronic device manufacturing apparatus 1000 is used to manufacture an organic EL panel used in an organic EL display device for a smartphone, for example.

[0040] The electronic device manufacturing apparatus 1000 is an apparatus constituting a production line in which a plurality of cluster-type units (hereinafter also referred to as "units") CU1 to CU3 are connected via a connecting chamber. Each unit is a structure in which a plurality of film forming chambers are arranged around a substrate conveying robot. It should be noted that the number of units is not limited to 3. In addition, the number of chambers belonging to each cluster is not limited to the number described below. In addition, the type and number of chambers may also be different for each cluster. Hereinafter, in the description common to all units and the description of unspecified units, reference symbols indicated by "x" are used instead of numbers, such as "CUx", and in the description of individual units, reference symbols indicated by numbers are used, such as "CU1" (reference symbols for structures attached to other than units also use "x" or numbers in the same way).

[0041] Figure 1Indicates a part of a film forming device that forms a film by evaporating a deposition material onto a substrate in the overall electronic device manufacturing device. Upstream of the film forming device, for example, a substrate storage device, a heating device, a pre-processing device such as a cleaning device, etc. may be provided, and downstream of the film forming device, for example, a sealing device, a processing device, a storage device for processed substrates, etc. may be provided, and they are combined as a whole to form an electronic device manufacturing device. The substrate is transported from the upstream side to the downstream side in a flow along the direction of arrow F.

[0042] The cluster unit CUx has a central conveying chamber TRx and a plurality of film forming chambers EVx1 to EVx4 and mask chambers MSx1 to MSx2 arranged around the conveying chamber TRx. Two adjacent units CUx and CUx+1 are connected by a connecting chamber CNx. The chambers TRx, EVx1 to EVx4, MSx1 to MSx2 and the connecting chamber CNx in the cluster unit CUx are spatially connected, and the interior thereof is maintained in a vacuum or an inert gas atmosphere such as nitrogen. In the present embodiment, each chamber constituting the unit CUx and the connecting chamber CNx is connected to a vacuum pump not shown in the figure, and can be independently evacuated. Each chamber is also referred to as a "vacuum chamber" or simply a "chamber". It should be noted that in this specification, "vacuum" refers to a state filled with a gas at a pressure lower than atmospheric pressure.

[0043] A conveying robot RRx serving as a conveying component for conveying the substrate S and the mask M is provided in the conveying chamber TRx. The conveying robot RRx is, for example, a multi-joint robot having a structure in which a robot hand for holding the substrate S and the mask M is mounted on a multi-joint arm. In the cluster unit CUx, the substrate S is conveyed by conveying components such as the conveying robot RRx and the conveying robot RCx described later while maintaining a horizontal state in which the film-forming surface of the substrate S faces downward in the direction of gravity. The conveying robot RRx conveys the substrate S between the passage chamber PSx-1 on the upstream side, the film-forming chambers EVx1 to EVx4, and the buffer chamber BCx on the downstream side. In addition, the conveying robot RRx conveys the mask M between the mask chambers MSx1 to 2 and the film-forming chambers EVx1 to 4.

[0044] The mask chambers MSx1 to MSx2 are chambers provided with mask stockers for storing masks M for film formation and used masks M, respectively. In the case of film formation by vapor deposition, a metal mask having a plurality of openings is preferably used as the mask M. The film forming chambers EVx1 to EVx4 are chambers for forming a film on the surface of the substrate S (film formation surface).

[0045] The connection chamber CNx has the function of connecting the unit CUx and the unit CUx+1 and delivering the substrate S formed in the unit CUx to the unit CUx+1 in the rear section. The connection chamber CNx of this embodiment is composed of a buffer chamber BCx, a vortex chamber TCx, and a passage chamber PSx in order from the upstream side. However, the structure of the connection chamber CNx is not limited to this, and it can also be composed of only the buffer chamber BCx or the passage chamber PSx.

[0046] The buffer chamber BCx is a chamber for transferring the substrate S between the transfer robot RRx in the unit CUx and the transfer robot RCx in the connection chamber CNx. The buffer chamber BCx has a function of adjusting the carrying speed and carrying timing of the substrate S by temporarily accommodating a plurality of substrates S.

[0047] The vortex chamber TCx is a chamber for rotating the orientation of the substrate S by 180 degrees. A conveying robot RCx is provided in the vortex chamber TCx for delivering the substrate S from the buffer chamber BCx to the passage chamber PSx. The conveying robot RCx rotates 180 degrees while supporting the substrate S received by the buffer chamber BCx and delivers it to the passage chamber PSx. As a result, the orientation of the substrate S when it is moved into the film forming chamber becomes the same in the unit CUx on the upstream side and the unit CUx+1 on the downstream side, so that the scanning direction of the film forming relative to the substrate S and the orientation of the mask M can be consistent in each unit CUx.

[0048] The passage chamber PSx is a chamber for delivering the substrate S between the transfer robot RCx in the connection chamber CNx and the transfer robot RRx+1 in the unit CUx+1 on the downstream side. In the present embodiment, a film thickness measuring unit is arranged in the passage chamber PSx.

[0049] Between the film forming chambers EVx1 to EVx4, the mask chambers MSx1 to MSx2, the transfer chamber TRx, the buffer chamber BCx, the swirl chamber TCx, and the passage chamber PSx, doors that can be opened and closed (for example, gate valves or gate valves) may be provided, or a structure that is always open may be provided.

[0050] <Vacuum evaporation device>

[0051] Figure 2The structure of the vacuum evaporation device 200 provided in the film forming chambers EVx1 to EVx4 is schematically shown. The vacuum evaporation device 200 includes a mask holder 201 for holding a mask M, a substrate holder 202 for holding a substrate S, an evaporation source unit 203, a moving mechanism 204, a film forming rate monitor 205, and a film forming control unit 206. The mask holder 201, the substrate holder 202, the evaporation source unit 203, the moving mechanism 204, and the film forming rate monitor 205 are provided in a vacuum chamber 207. The film forming control unit 206 functions as a control unit and a correction unit, and controls the evaporation source unit 203 and the moving mechanism 204 based on the output value of the film forming rate monitor 205, thereby controlling the film forming performed by the vacuum evaporation device 200 so that the film thickness formed on the substrate S becomes a target value.

[0052] The vacuum deposition device 200 also has a position adjustment mechanism 350 as an alignment mechanism and a camera 370 as a photographing device. The position adjustment mechanism 350 has a function of moving at least one of the mask holder 201 and the substrate holder 202. The position adjustment mechanism 350 adjusts the relative position of the substrate S with respect to the mask M by performing XY movement and θ rotation of the substrate holder 202 in a plane substantially parallel to the film-forming surface of the substrate S. Here, the XY directions are two non-parallel directions in a plane parallel to the film-forming surface of the substrate S, and the θ direction is a rotation direction around the Z direction perpendicular to the XY plane. The film forming control unit 206 detects the substrate alignment mark formed on the substrate S and the mask alignment mark formed on the mask M based on the image captured by the camera 370. In addition, the position of the substrate S is adjusted using the position adjustment mechanism 350 so that the distance between the substrate alignment mark and the mask alignment mark is within a predetermined range. Thereby, the mask M held by the mask holder 201 and the substrate S held by the substrate holder 202 are positioned (aligned).

[0053] The substrate S is placed on the upper surface of the mask M maintained in a horizontal state with the film-forming surface facing downward. An evaporation source unit 203 for releasing the evaporation material is provided below the mask M. The evaporation source unit 203 generally includes a container (crucible) for accommodating the evaporation material, a heater for heating the evaporation material in the container, etc. In addition, as required, a reflector, a heat transfer member, a gate, etc. for improving the heating efficiency may also be provided in the evaporation source unit 203. The vacuum evaporation device 200 of this example accommodates the evaporation material such as an organic material in the crucible provided in the evaporation source unit 203.

[0054] The moving mechanism 204 is a component that moves (scans) the evaporation source unit 203 in a direction parallel to the film-forming surface of the substrate S (scanning direction N indicated by the arrow). In the present embodiment, a reciprocating scanning method using a single-axis moving mechanism 204 is exemplified, but a raster scanning method using a moving mechanism with more than two axes may be used depending on the shape of the evaporation source unit 203 and the size of the substrate S. In addition, since the film forming rate varies depending on the relative speed between the substrate S and the evaporation source unit 203, instead of moving the evaporation source unit 203 relative to the substrate S, the substrate S may be relatively moved within a plane relative to the evaporation source unit 203.

[0055] Figure 3 2 is a perspective top view showing the evaporation source unit 203 and the moving mechanism 204 as viewed from the upper side of the inside of the vacuum evaporation device 200. The evaporation source unit 203 is configured to be able to reciprocate on the track of the moving mechanism 204. The evaporation source unit 203 of this embodiment is provided with a plurality of heating units 209a to 209c, so that the film forming speed can be increased. In addition, different materials can be contained and evaporated in each crucible unit, so that a mixed film or a laminated film can be formed. Each heating unit 209 is provided with a plurality of nozzles 212, and the evaporation material can be discharged over a wide range relative to the film-forming surface of the substrate S. The range on the substrate where the evaporation material discharged from the nozzle 212 can be formed into a film is indicated by a dotted line as a film forming area SA. The film forming area SA in this embodiment is an area where the evaporation material discharged from the evaporation source unit 203 can form a uniform film regardless of the positional relationship with the plurality of heating units 209a to 209c, and is an area to be cut out as a panel for a product. In this embodiment, the film thickness measurement is performed in consideration of the film thickness distribution in the film forming area SA of the substrate S.

[0056] Figure 4 is a cross-sectional view of a heating unit 209 included in the evaporation source unit 203 in the Y direction, showing Figure 3 BB cross section. The heating unit 209 includes two crucibles 210a and 210b that can independently control the film formation rate. The crucible is heated by a heating component such as a line heater built into the frame 216, so that the evaporation material in the crucible evaporates, and the material flies in a direction controlled by the nozzle 212 and adheres to the substrate S, thereby forming a film. When the direction in which the crucible 210a and the crucible 210b are arranged is set to a first direction, the moving direction of the evaporation source unit 203 is a second direction intersecting the first direction.

[0057] In the evaporation source unit 203, as monitoring components, there are included a quartz monitor corresponding to the crucible 210a, namely a film formation rate monitor 205a, and a quartz monitor corresponding to the crucible 210b, namely a film formation rate monitor 205b. The film formation rate monitor 205 moves together with the heating unit 209 while receiving the attachment of the flying evaporation material. The function of the film formation rate monitor 205 will be described later. The film formation control unit 206 can independently control the rate of the crucible 210a and the crucible 210b. That is, the film formation control unit 206 can independently control the current supplied to the heater provided in the crucible 210a and the heater provided in the crucible 210b. Therefore, the temperature adjustment of the crucible 210a based on the measured rate of the film formation rate monitor 205a and the temperature adjustment of the crucible 210b based on the measured rate of the film formation rate monitor 205b can be performed independently.

[0058] It should be noted that, depending on the structure of the evaporation source unit 203, it is also preferable to take measures to counter crosstalk of the film formation rate monitor 205. For example, in the case where it is desired to reduce the influence on the measurement caused by the evaporation material discharged from the crucible 210a adhering to the film formation rate monitor 205b on the opposite side, a cover that limits the evaporation material from being incident from directions other than the predetermined direction may be provided around the film formation rate monitor 205b. In this way, the film formation rate from the crucible 210b corresponding to the film formation rate monitor 205b can be measured with high accuracy.

[0059] It should be noted that in the present embodiment, the substrate S is placed on the upper surface of the mask M, but as long as the substrate S and the mask M are sufficiently close to each other, the substrate S may not be placed on the upper surface of the mask M. For example, it may be a structure in which the substrate S is close to the lower surface of the mask M and the evaporation material is made to fly from above, or a structure in which the close-contacted substrate S and the mask M are arranged in the longitudinal direction (parallel to the Z direction). In addition, the magnet unit not shown in the figure may be brought close to the surface of the substrate S on the side opposite to the film-forming surface, and the mask foil of the mask M may be attracted by magnetic force to improve the close contact of the mask M to the substrate S. In addition, a cooling unit for cooling the substrate S may be provided, and the magnet unit may also serve as the cooling unit. In addition, the evaporation source unit 203 may also be configured to arrange a plurality of evaporation source units or containers so that they move as a whole. According to such a structure, different materials can be contained and evaporated in each evaporation source unit or each container, and a mixed film or a laminated film can be formed.

[0060] The film formation rate monitor 205 is a monitoring component that measures the amount of vapor deposition material released from the evaporation source unit 203. The film formation rate monitor 205 of the present embodiment is a quartz oscillation type film formation rate monitor, which has a quartz resonator that moves together with the evaporation source unit 203 and is arranged at a position that does not hinder the vapor deposition (deposition) of the vapor deposition material released from the evaporation source unit 203 and the vapor deposition material reaches the substrate S to form a thin film. The resonant frequency of the quartz resonator changes according to the amount of material vapor deposited on the quartz resonator. The film formation rate monitor 205 calculates the amount of vapor deposition material attached per unit time, that is, the film formation rate (evaporation rate), based on the relationship between the amount of vapor deposition material on the electrode of the quartz resonator (film thickness or mass of deposited vapor deposition material) and the change in the resonant frequency (natural frequency) of the quartz resonator. That is, the film forming rate monitor 205 measures the change in the resonant frequency of the quartz oscillator per unit time, and outputs the evaporation amount of the evaporation material corresponding to the change as the film forming rate. The film forming rate is an amount that indirectly indicates the amount (emission speed) of the evaporation material released per unit time from the evaporation source unit 203. In this sense, the film forming rate monitor 205 is an example of a monitoring component that obtains the measured value of the amount of the evaporation material released from the evaporation source unit 203.

[0061] Figure 5 2 is a diagram showing a schematic configuration of the film formation rate monitor 205. The film formation rate monitor 205 includes a monitor head 11, a shielding member 12, a quartz crystal resonator 13 (13a, 13b), and a quartz crystal holder 14.

[0062] A quartz holder 14 is assembled inside the monitor head 11 to support a plurality of quartz resonators 13 (13a, 13b) arranged at equal intervals in the circumferential direction. The monitor head 11 is provided with a monitor opening 11a slightly larger than the quartz resonator 13. One of the quartz resonators (quartz resonator 13a) provided in the quartz holder 14 is exposed to the outside (evaporation source unit 203) through the monitor opening 11a, and the other quartz resonators 13b are hidden inside the monitor head 11 as quartz resonators that have been used or are for replacement. The quartz holder 14 is connected to a motor shaft 16a of a servo motor (not shown) and is driven to rotate. In this way, the quartz resonators 13 exposed to the outside through the monitor opening 11a can be switched in sequence. When the amount of the deposited material 400 of the quartz crystal resonator 13 exposed to the outside through the monitor opening 11a exceeds a predetermined amount and reaches the end of its life, the quartz crystal holder 14 rotates to move a new quartz crystal resonator 13 to a position overlapping the monitor opening 11a. Thus, the quartz crystal resonator 13 is replaceable.

[0063] The shielding member 12 is a substantially disk-shaped member, the center of which is connected to the motor shaft 15a of the servo motor (not shown), and is driven to rotate by the servo motor. The shielding member 12 is provided with a fan-shaped opening slit 12a, and the shielding member 12 rotates so that the monitor opening 11a of the monitor head 11 and the opening slit 12a of the shielding member 12 alternately change between overlapping and non-overlapping states. When the monitor opening 11a and the opening slit 12a overlap, the evaporation material 400 is allowed to be evaporated onto the quartz oscillator 13a, and when they do not overlap, the evaporation of the evaporation material 400 onto the quartz oscillator 13a is blocked by the shielding portion 12b, which is the portion of the shielding member 12 other than the opening slit 12a.

[0064] <Film thickness measurement department>

[0065] Figure 6 A cross-sectional view schematically showing the structure of the passage chamber PSx, showing Figure 1 The passage chamber PSx is a chamber arranged downstream of the unit CUx and carries in the substrate S after film formation in the film forming chamber of the unit CUx. Inside the vacuum chamber of the film forming device 300 of the passage chamber PSx, there are arranged a substrate tray 301 for holding the substrate S conveyed by the conveying robot RCx and a film thickness measuring unit 310 as a measuring component for measuring the film thickness of the vapor deposition material in the substrate S. That is, the film thickness measuring unit 310 is arranged in the passage chamber PSx which is the destination to which the substrate S after film formation in the film forming chambers EVx1 to EVx4 is conveyed by the conveying robot RCx.

[0066] It should be noted that the film thickness measuring unit 310 may not be arranged in the passage chamber PSx, but an inspection chamber for film thickness measurement may be provided. In addition, it may be determined whether to arrange the film thickness measuring unit 310 in the passage chamber PSx according to the content of the processing in the cluster unit CUx on the upstream side. For example, the film thickness measuring unit 310 may be arranged when a light-emitting layer is formed in the unit CUx, the film thickness measuring unit 310 may be arranged when an inter-electrode layer is formed in the unit CUx, the film thickness measuring unit 310 may be arranged when a fine mask for each pixel is used in the unit CUx, etc.

[0067] The film thickness measuring unit 310 is a sensor for optically measuring the film thickness. In this embodiment, a film thickness meter having a reflection spectroscopic optical sensor is used. The film thickness measuring unit 310 is generally composed of a film thickness evaluation unit 311, a sensor head 312, and an optical fiber 313 connecting the sensor head 312 and the film thickness evaluation unit 311. The sensor head 312 is arranged below the substrate tray 301 in the vacuum chamber and is connected to the film thickness evaluation unit via the optical fiber 313. The sensor head 312 has a function of setting the irradiation area of ​​the light guided via the optical fiber 313 to a predetermined area, and optical components such as optical fibers, pinholes, and lenses can be used.

[0068] The sensor head 312 of the film thickness measuring unit 310 is mounted on a moving mechanism including a setting table 314 and a track 316, and can be moved to various positions in a plane parallel to the substrate S. Thus, the film thickness distribution in the plane of the substrate S can be measured. However, the method is not limited to the method of moving the film thickness measuring unit 310, as long as the film thickness can be measured at multiple locations in the plane and the film thickness distribution can be output, any method can be used. For example, a film thickness measuring unit that can measure a wide range can be used, or multiple film thickness measuring units can be configured to measure the film thickness distribution.

[0069] Figure 7 : is a block diagram of the film thickness measuring unit 310. The film thickness evaluation unit 311 has a light source 320, a spectrometer 321, and a measurement control unit 322. The light source 320 is a device that outputs measurement light, for example, a deuterium lamp, a xenon lamp, a halogen lamp, etc. are used. As the wavelength of light, a range of 200nm to 1μm can be used. The spectrometer 321 is a device that splits the reflected light input from the sensor head 312 and measures the spectrum (intensity of each wavelength), for example, it is composed of a spectroscopic element (grating, prism, etc.) and a detector that performs photoelectric conversion. The measurement control unit 322 is a device that controls the light source 320 and calculates the film thickness based on the reflection spectrum.

[0070] The measurement light output from the light source 320 is guided to the sensor head 312 via the optical fiber 313, and is projected from the sensor head 312 to the substrate S. The light reflected by the substrate S is input to the spectrometer 321 from the sensor head 312 via the optical fiber 313. At this time, the light reflected from the surface of the thin film on the substrate S and the light reflected from the interface between the thin film and the base layer interfere with each other. In this way, due to the influence of interference and absorption based on the thin film, the reflection spectrum is affected by the optical path length difference, that is, the film thickness. By analyzing the reflection spectrum using the measurement control unit 322, the film thickness of the thin film can be calculated.

[0071] The film thickness evaluation by the above-mentioned reflection spectroscopy method can evaluate organic films with a thickness of several nm to several 100 nm with high precision in a short time, and therefore is a preferred method for evaluating the organic layer of an organic EL element. Here, as materials for the organic layer, hole transport materials such as αNPD: α-naphthylphenylbenzenediamine, luminescent materials such as Ir(ppy)3: tris(2-phenylpyridine)iridium complex, electron transport materials such as Alq3: tris(8-hydroxyquinoline)aluminum or Liq: 8-hydroxyquinoline-lithium, etc. can be listed. Moreover, it can also be applied to mixed films of the above-mentioned organic materials. The spectroscopic interferometer does not require a motor, so it is easy to use in a vapor deposition device that requires a high vacuum degree, and has the advantage of being able to perform measurements near the substrate. However, the film thickness measuring unit 310 is not limited to this, and may also be an ellipsometer or the like.

[0072] Here, refer to Fig.15, issues related to the measurement of the film thickness measuring unit 310 in the conventional technology are described. Fig.15 The following is a structural example of the film-forming surface side of a conventional substrate S. A film-forming area SA is provided in the central portion of the substrate S, where uniform film formation is required by the attachment of a vapor deposition material. On the other hand, in the substrate S, a film thickness measuring area 330 is provided in front of the scanning direction N of the evaporation source unit during film formation. During the film forming process in each film forming chamber, film formation is also performed in the film thickness measuring area 330, thereby forming a thin film (a measuring film sheet 331 (331a to 331f)) for film thickness measurement in the film thickness measuring area 330. This can be achieved by pre-forming an opening for the measuring film sheet 331 on the mask M used in each film forming chamber. In such a conventional method, the film thickness of the measuring film sheet 331 is measured. However, in reality, sometimes a deviation in film thickness may occur inside the film-forming area SA used for the manufacture of organic EL panels. In particular, in recent years, in the case of large-scale substrates, even if the correction coefficient is corrected based only on the film thickness of the measuring film sheet 331, there is sometimes a lack of accuracy. Therefore, it is necessary to measure the film thickness distribution within the substrate surface and reflect it in the correction factor calibration.

[0073] Therefore, in the present invention, as referenced Figure 6 As described above, the film thickness measuring unit 310 is configured to be able to measure the film thickness distribution within the surface of the substrate S. Thus, not only can the area of ​​a part of the substrate S such as the measuring film be measured, but also the film thickness in the film forming area SA actually used for the manufacture of the organic EL panel can be measured, and it can be used to correct the correction coefficient. It should be noted that in the present embodiment, the measurement in the film forming area for the actual panel manufacture is performed, but depending on the shape of the mask opening, etc., it takes effort to use this method. For example, in the case of the fine metal mask (FMM) method, in the film forming area used in the panel manufacturing of the substrate using the actual mask for panel manufacturing, the attachment part and the non-attachment part of the material are sometimes replaced by a shorter distance, and the film thickness of the panel range cannot be measured. In this case, instead of the actual manufacturing mask, the substrate on which the film is formed using an opening mask with a larger opening can be used as the measurement object of the film thickness distribution.

[0074] It should be noted that "film thickness distribution" refers to a set of film thickness values ​​within a predetermined range of a plane having a certain area or a predetermined range of a straight line having a certain length or distance in the substrate S. That is, even if the film thickness is not necessarily obtained in the entire substrate S or the entire film forming area SA, correction coefficient correction can be performed. In addition, the coordinate interval when obtaining the film thickness value is arbitrary, as long as the film thickness value can be obtained at the interval required for correction. Figure 81 is a top view showing an example of the target area for obtaining the film thickness distribution, showing an example of the structure of the film-forming surface side of the substrate S in this embodiment. When obtaining the film thickness distribution, the film thickness value can be obtained in the entire substrate S (or the entire film-forming area SA), or a part of the area (for example, the area 340 corresponding to the area where a panel is cut out) can be used as the target. In addition, the area on the straight line can be used as the target. Figure 8 In the film formation, film thickness values ​​are obtained at predetermined intervals as film thickness distribution in a region 341 extending in a direction (orthogonal direction C) orthogonal to a direction in which the evaporation source unit moves relative to the substrate (scanning direction N) during film formation.

[0075] It should be noted that even when using Fig.15 In the case of such measuring films 331a to 331f, the film thickness distribution of each film forming chamber can also be obtained. In this case, each measuring film is further divided into a number of small areas corresponding to the number of film forming chambers, and film formation is performed only in the corresponding small areas for each film forming chamber. In this way, the film thickness data of 6 points can be measured in a manner arranged in the Y direction for each film forming chamber, so the film thickness distribution can be obtained by performing interpolation processing.

[0076] Fig. 9 This is an example of film thickness distribution. Fig. 9 Indicated in Figure 8 The range of the area 341 is determined using Figure 3-4 The results of the film thickness distribution of the substrate S formed by the evaporation source unit 203 of the structure shown. The horizontal axis uses the unit inherent to the device (arbitrary unit: arbitrary unit) to represent the position on the substrate within the measurement range, the coordinate of the center C of the area is set to 0, the Y direction + is set to a positive value, and the Y direction - is set to a negative value. In addition, the vertical axis represents the film thickness (angstroms: angstroms). The solid line in the figure is equivalent to the measured film thickness value. In addition, the dotted line represents the thickness of the crucible 210a from the heating unit 209, and the dot-dash line represents the thickness from the crucible 210b. In this way, in the passage chamber PSx of this embodiment, the film thickness of the substrate S is not measured at only one point, but the film thickness of the substrate S can be measured in a distributed manner.

[0077] <Film formation control>

[0078] Next, the correction coefficient calibration of the above-mentioned quartz monitor is described. The measured value of the film formation rate (measured rate) output by the film formation rate monitor 205 is sometimes inconsistent with the actual film formation rate (actual rate) in the substrate S during film formation. The main reason is that the position of the quartz oscillator of the film formation rate monitor 205 relative to the evaporation source unit 203 is different from the position of the substrate S. In order to eliminate this deviation, a coefficient called a correction coefficient (TF) is generally used to correct the measured rate output by the film formation rate monitor 205.

[0079] However, even if the correction coefficient is used for correction, there are still cases where the measured rate deviates from the actual rate. This is because the relationship between the amount of evaporation of the evaporation material and the change in the resonant frequency is not constant, but varies depending on the resonant frequency or the evaporation amount. Generally speaking, as the evaporation amount in the quartz resonator increases, the resonant frequency of the quartz resonator gradually decreases. Moreover, the change in the resonant frequency of the quartz resonator relative to the constant evaporation amount changes. In other words, even if the change in the resonant frequency of the quartz resonator is constant, the amount of film formation used to produce the change will change according to the total amount of evaporation material previously deposited on the quartz resonator. Therefore, even if the measured rate is consistent with the actual rate just after the quartz resonator is replaced, the deviation between the measured rate and the actual rate will gradually increase over time.

[0080] In addition, there is a deviation caused by individual differences of the quartz oscillators in the relationship between the change in the resonant frequency of the quartz oscillator and the amount of vapor deposition of the vapor deposition material. Therefore, even if the measured rate and the actual rate are consistent in a certain quartz oscillator, when it is replaced with another quartz oscillator, there is a case where the measured rate and the actual rate deviate. When a constant set according to the structure of the film forming device is used as a correction factor, it is impossible to deal with such deviations caused by time changes and individual differences of the quartz oscillator monitor, so there is a possibility that film formation cannot be performed with the desired accuracy through film formation control based on the measured rate.

[0081] Therefore, in the film forming apparatus of this embodiment, Fig.10 The control is shown in the control block diagram of . Here, the film formation rate measurement and film formation of the substrate S2 are performed in the film formation chamber EV, and in the passage chamber PS, the film thickness measurement of the substrate S1 that is subjected to film formation before the substrate S2 and is moved into the passage chamber PS after the film formation is completed is performed. The film formation control unit 206 can function as a control component, as control A, to control the film formation of the substrate S2 based on the measured rate measured by the film formation rate monitor 205. The film formation control unit 206 can also function as a correction component, as control B, to obtain the measured value of the film thickness of the substrate S1 from the film thickness measurement unit 310, and to correct the film formation control of the substrate S2 based on the measured value of the film thickness of the substrate S1.

[0082] The film forming rate monitor 205 is provided in the film forming chamber EV, so the control A on the substrate S2 can be implemented in real time during the film forming of the substrate itself, which is the object of the rate measurement. In contrast, the film thickness measuring unit 310 is provided in the passage chamber PS at the rear section of the film forming chamber EV. If the substrate S1 after film forming is not moved into the passage chamber PS, the measured value of the film thickness cannot be obtained. Therefore, the control B on the substrate S2 is implemented based on the film thickness measurement result of the substrate S1 previously performed.

[0083] In general, the film forming rate monitor 205 can output a new measurement value in a short time compared to the time required for the film thickness measuring unit 310 to output a new measurement value. Therefore, the frequency of feeding back a new measurement value differs greatly between the feedback control based on the measurement rate measured by the film forming rate monitor 205 (control A) and the feedback control based on the measurement value of the film thickness measured by the film thickness measuring unit 310 (control B). The measurement rate measured by the film forming rate monitor 205 may deviate from the actual rate due to the change in the characteristics of the quartz oscillator over time, but in control B, the deviation is corrected based on the measurement value of the film thickness measured by the film thickness measuring unit 310.

[0084] The control A based on the measured rate of the film formation rate monitor 205 is performed by controlling various operation parameters of the vacuum evaporation device 200 in such a way that the measured rate approaches the target value. The operation parameters of the vacuum evaporation device 200 that are the control objects include, for example, the heater temperature (heater current) of the evaporation source unit 203, the gate opening, the scanning speed of the evaporation source unit 203 based on the moving mechanism 204, the film formation time, the number of scans, and the like. For example, when the scanning speed is increased, the film formation rate decreases, and when the scanning speed is reduced, the film formation rate increases. When the current flowing through the heater is increased, the heat generation increases, and the amount of evaporation material released increases, so the film formation rate increases, and when the current is reduced, the film formation rate decreases.

[0085] Feedback correction (control B) based on the film thickness value measured by the film thickness measuring unit 310 is performed by correcting the measurement rate based on the film thickness value. This correction is performed by changing the output measured value of the film formation amount by a predetermined unit amount relative to the change in the resonant frequency of the quartz oscillator. Specifically, when the correction coefficient after correction is set to TF2, the correction coefficient before correction is set to TF1, the film thickness measurement value is set to THm, and the film thickness target value is set to THt, TF2 = TF1 × (THm / THt). In addition, when the measurement rate after correction is set to R2, and the measurement rate before correction is set to R1, R2 = RF2 × R1. The film formation control unit 206 uses the corrected measurement rate R2 to feedback control the evaporation source unit 203 and the moving mechanism 204, so that film formation control that changes over time in consideration of the relationship between the resonant frequency of the quartz oscillator and the evaporation amount of the evaporation material can be performed.

[0086] For example, if the target film thickness is set to Set the target rate to The set deposition time is set to 100 seconds. In this case, the film forming control unit 206 performs feedback control on the evaporation source unit 203 and the moving mechanism 204 so that the measured rate measured by the film forming rate monitor 205 is close to The correction factor TF1 before correction is set to 100%, and the film thickness of the vapor deposition material on the substrate S1 after film formation is measured by the film thickness measuring unit 310. As a result, the measured film thickness is In this case, the measured rate measured by the film formation rate monitor 205 is But the actual rate is That is, the measured rate calculated based on the frequency change of the quartz oscillator is too large. According to the above formula, the correction coefficient TFcal after correction becomes 98%, and the film formation rate after correction calculated based on the frequency change of the quartz oscillator is as follows: The actual rate is outputted in this way. If the measured rate is close to the target rate The evaporation source unit 203 and the moving mechanism 204 are feedback-controlled in a manner such that, for example, the temperature of the heater of the evaporation source unit 203 is raised. As a result, the evaporation amount increases, and the actual rate can be brought close to the target rate.

[0087] The correction coefficient is a value representing the relationship between the resonant frequency of the quartz oscillator and the amount of vapor deposition material in the quartz oscillator. Therefore, the correction of the correction coefficient is an example of the correction of the relationship between the resonant frequency of the quartz oscillator and the amount of vapor deposition material in the quartz oscillator. It should be noted that the correction of the film formation control based on the measured value of the film thickness measured by the film thickness measuring unit 310 can also be performed by correcting the adjustment amount (control amount) of the action parameters of the vacuum evaporation device 200 based on the measured rate based on the measured value of the film thickness. Moreover, it is also possible to combine the case of correcting the measured rate measured by the film formation rate monitor 205 based on the measured value of the film thickness and the case of correcting the adjustment amount of the action parameters (such as the heater current value) of the vacuum evaporation device 200 based on the measured value of the film thickness.

[0088] It should be noted that, when the evaporation source unit 203 has a plurality of heating units such as the heating units 209a to 209c, the film thickness distribution can be measured by operating each heating unit simultaneously, or the film thickness distribution can be measured for each heating unit. As a method of measuring for each heating unit, for example, when the temperature of each heating unit can be controlled individually, only the heating unit that is the object can be heated. In addition, when each heating unit can be closed individually by a gate, the evaporation material can be prevented from flying by closing the gates of the heating units other than the object of measurement. In addition, the object of measurement can be a single-layer film formed by a single material, and the film thickness of each material can be measured for a mixed film or a laminated film formed by multiple materials.

[0089] In addition, when the film forming device has a plurality of cluster units CUx, the film thickness measuring section 310 can be provided at the rear section of each cluster unit CUx, and it is not necessary to configure the film thickness measuring section 310 in all passage chambers PSx. The film thickness measuring section 310 can be provided at least in the passage chamber PSx at the rear section of the cluster unit CUx located at the most downstream of the production line. In the case where the film thickness measuring section 310 is provided only at the rear section of a part of the cluster units CUx, the measurement result of a certain film thickness measuring section 310 can be used to correct the film forming control in the cluster unit CUx located at the upstream side of the film thickness measuring section 310. In addition, when the evaporation source unit 203 is scanned N times in the scanning direction in the film forming chamber to form a film, a different number of scans from the normal film forming can also be used. For example, in the case where the normal number of scans is 2 reciprocating times, the film thickness becomes thicker by increasing the number of scans to, for example, 10 reciprocating times, so that the measurement accuracy in the film thickness measuring section 310 can be improved.

[0090] <Correction based on film thickness distribution>

[0091] Reference Fig.11 , an example of reflecting the film thickness distribution obtained by the film thickness measuring unit 310 in the correction of the correction coefficient is described. The film thickness distribution used here is based on the film thickness measuring unit 310 for Figure 8 The film thickness values ​​obtained in the region 341 shown in FIG. 3 are approximately distributed. Figure 4 As shown in FIG. 1 , since film formation is performed using the heating unit 209 having portions capable of controlling film formation rates independently of each other, the possibility of film thickness variation within the surface of the substrate S is higher than in the past.

[0092] Before correction, the correction coefficient of the first film formation rate monitor 205a is set to TF1a, and the correction coefficient of the second film formation rate monitor 205b is set to TF1b, which are collectively referred to as TF1. In addition, after correction, the correction coefficient of the first film formation rate monitor 205a is set to TF2a, and the correction coefficient of the second film formation rate monitor 205b is set to TF2b, which are collectively referred to as TF2. In addition, the film thickness distribution of this embodiment can be considered as a one-dimensional arrangement of film thickness values ​​in the Y direction, so the measured value of the film thickness distribution and the value calculated based on the measured value, that is, the film thickness distribution value, are expressed as THm(y), and the target value of the film thickness distribution is expressed as THt(y). Fig. 9 As shown, y takes a value in the range of -60 [au] to +60 [au]. Therefore, the correction coefficient calibration of this embodiment corresponds to the case where a function G such as TF2 = G (TF1) is obtained based on THm (y) and THt (y).

[0093] The target value THt(y) of the film thickness distribution in this embodiment is calculated using Fig. 9In addition, the film thickness distribution value THm(y) is used Fig.11 Table 1 shows the film thickness at Y = -55 [au], +55 [au], and the contribution of crucible 210a and crucible 210b to the film thickness. The left column shows the target value THt (y). The middle column shows the measured values ​​at -55 [au] and +55 [au] and the film thickness distribution value THm (y) calculated based on the measured values.

[0094]

Table 1

[0095] As shown in Table 1, there is a tendency that the film thickness from the crucible 210a is thinner than the target value, and the film thickness from the crucible 210b is thicker than the target value. This means that the first film formation rate monitor 205a corresponding to the crucible 210a generates an error in the correction coefficient by overestimating the film formation rate, and the second film formation rate monitor 205b corresponding to the crucible 210b generates an error in the correction coefficient by underestimating the film formation rate. Therefore, the film formation control unit 206 calibrates the correction coefficients of the first film formation rate monitor 205a and the second film formation rate monitor 205b, respectively.

[0096] In this embodiment, according to the correction method described above, the correction coefficient TF1a of the first film forming rate monitor 205a is corrected based on the target value and the film thickness distribution value of the film thickness when y=-55[au], and the correction coefficient TF1b of the second film forming rate monitor 205b is corrected based on the target value and the film thickness distribution value of the film thickness when y=+55[au]. It should be noted that the position of the film thickness used for correction is not limited to this.

[0097] Fig.11 (b) and the right column of Table 1 show the film thickness distribution approximated based on the measured film thickness values ​​for the substrate on which the film was formed after adjusting the correction coefficient. Fig.11 (b) and Fig. 9 A comparison shows that substantially the same film thickness distribution is shown, and a film thickness distribution close to the target value THt(y) can be achieved.

[0098] (Variation Example)

[0099] The present invention is characterized in that it has a step of correcting the output value of the quartz monitor based on the film thickness distribution within the surface of the film formed on the substrate S. This method is not limited to the above-mentioned example. For example, various methods can be used to obtain the target value of the film thickness distribution and the film thickness distribution value that serve as the basis for adjusting the correction coefficient.

[0100] As an example, it is possible to operate only the crucible 210a (or crucible 210b) in the heating unit 209 to form a film and obtain a more accurate measured value. In this case, the target value and the measured value of the film thickness are not compared at only one point, but the accuracy of the correction can be improved by comparing them at multiple points. In this case, for example, the ratio of the target value to the measured value can be calculated at any predetermined interval, and the average of the multiple values ​​obtained can be calculated and then used for correction of the correction coefficient. By performing such correction coefficient correction on the crucible 210a and the crucible 210b respectively, high-precision correction can be performed.

[0101] In addition, even when the crucible 210a and the crucible 210b are operated simultaneously, the accuracy of the correction can be improved by comparing the film thickness at multiple locations. Moreover, especially when the evaporation of a metal material is performed to form an electrode film, there is a tendency that the number of heaters that can be independently controlled in the evaporation source unit increases. For example, when the evaporation source unit has six independently controlled parts from the first part to the sixth part, a film formation rate monitor is provided for each. Even in such a case, the target value can be compared with the measured value, and the correction coefficient can be corrected for each film formation rate monitor.

[0102] In addition, the film thickness distribution used for correction is not limited to the set of film thickness values ​​on a straight line, and a set of film thickness values ​​in a predetermined area of ​​a plane shape may be used. In this case, for example, a plurality of film thickness measurement positions may be set at predetermined intervals in the predetermined area, and correction of the correction coefficient may be performed based on the average of the ratio of the target value to the actual value at these plurality of film thickness measurement positions.

[0103] [Example 2]

[0104] In this embodiment, an application example of the present invention to an electronic device manufacturing apparatus that is not a cluster type will be described. Fig.12 This is a part of the electronic device manufacturing apparatus of this embodiment, and shows an in-line film forming apparatus that performs film formation while conveying a substrate S and a mask M that are aligned and in close contact.

[0105] The film forming apparatus 300 includes a mask carrying chamber 90, an alignment chamber 100 (mask mounting chamber), a plurality of film forming chambers 110a and 110b, inversion chambers 111a and 111b, a conveying chamber 112, a mask separation chamber 113, a substrate separation chamber 114, a carrier conveying chamber 115, a mask conveying chamber 116, a substrate carrying chamber 117 (substrate mounting chamber), and a film thickness measuring chamber 118. The substrate S held on the substrate carrier 9 is conveyed in each chamber along a path indicated by a dotted line, and the mask M is conveyed in each chamber along a path indicated by a dotted line.

[0106] The substrate S held on the substrate carrier 9 and carried into the path of the dotted line in the substrate carrying-in chamber 117 is reversed by the reversing mechanism 120a in the reversing chamber 111a and mounted on the mask M in the mask carrying-in chamber 90. Then, after the substrate S and the mask M are aligned and closely attached in the alignment chamber 100, the substrate S is transported in the film forming chambers 110a and 110b while being film-formed by the evaporation material discharged from the evaporation source unit 203 provided in the film forming chamber. It should be noted that a film forming rate monitor 205 is installed on the substrate carrier. Therefore, the discharged evaporation material adheres to the film-forming surface of the substrate S and also adheres to the film forming rate monitor 205. Thus, the film forming rate during the film forming is measured. In addition, a film thickness measuring section 310 for optical film thickness measurement is provided in the film thickness measuring chamber 118 disposed between the film forming chambers 110a and 110b, which temporarily stops the substrate carrier 9 and measures the film thickness of the vapor deposition material on the substrate S after film formation in the film forming chamber 110a.

[0107] Next, the substrate S held on the substrate carrier is carried into the conveying chamber 112. The conveying chamber 112 is also provided with a film thickness measuring unit 310 to measure the film thickness of the evaporation material of the substrate S after film formation in the film forming chamber 110b. Next, after the mask M is separated from the substrate S in the mask separation chamber 113, the substrate S is reversed in the reversal mechanism 120b in the reversal chamber 111b, and is separated from the substrate carrier 9 in the substrate separation chamber 114 and carried out to the outside of the film forming apparatus 300. On the other hand, the substrate carrier 9 is conveyed to the substrate carrying-in chamber 117 via the carrier conveying chamber 115 and holds the next substrate S.

[0108] In addition, the film forming device 300 is provided with a film forming control unit 206. In the film forming device 300 having the structure of the present embodiment, the film forming rate monitor 205 mounted on the substrate carrier 9 measures the film forming rate during film forming, and the film thickness measuring unit 310 optically measures the film thickness of the evaporation material in the substrate after film forming. The film forming control unit 206 controls the relative speed between the evaporation source unit 203 and the substrate S arranged in the film forming chamber by adjusting the conveying speed of the substrate carrier 9 based on the measured value of the film forming rate, and controls the evaporation amount of the evaporation material by controlling the current input to the evaporation source unit 203. The film forming control unit 206 corrects such film forming control based on the measured value of the film thickness measured by the film thickness measuring unit 310. Therefore, high-precision film forming control can be performed by the same principle as the above-mentioned embodiment.

[0109] (Variation Example)

[0110] Fig.14This is a cross-sectional view schematically showing the structure of the film forming chamber EV in a modified example, and the parts with low relevance to the description are omitted. In this modified example, a single vacuum evaporation device 200 is configured to scan through a single evaporation source unit 203, thereby simultaneously forming films on two substrates S (S1, S2).

[0111] In such a structure, the film thickness measuring unit 310 in the rear stage can measure the film thickness distribution of only one substrate (for example, the substrate S1 held by the substrate holder 202a), or can measure the film thickness distribution of the substrates of both the substrate holders 202a and 202b. In this case, TF correction can also be performed.

[0112] [Example 3]

[0113] (Method for manufacturing organic electronic device)

[0114] In this embodiment, an example of a method for manufacturing an organic electronic device using a film forming apparatus is described. Hereinafter, as an example of an organic electronic device, the structure and manufacturing method of an organic EL display device are illustrated. First, the organic EL display device to be manufactured is described. Fig.13 (a) shows an overall view of the organic EL display device 50, Fig.13 (b) shows the cross-sectional structure of one pixel.

[0115] like Fig.13 As shown in (a), in the display area 51 of the organic EL display device 50, a plurality of pixels 52 having a plurality of light-emitting elements are arranged in a matrix. The light-emitting elements each have a structure having an organic layer sandwiched by a pair of electrodes. It should be noted that the pixel mentioned here refers to the smallest unit that can display the desired color in the display area 51. In the case of the organic EL display device of this figure, the pixel 52 is formed by a combination of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that display different light. The pixel 52 is mostly composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but it can also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and there is no particular limitation as long as it is at least one color.

[0116] Fig.13 (b) is Fig.13Schematic diagram of a partial cross section at line AB of (a). The pixel 52 has an organic EL element on a substrate 53, and the organic EL element has a first electrode (anode) 54, a hole transport layer 55, any one of the light-emitting layers 56R, 56G, and 56B, an electron transport layer 57, and a second electrode (cathode) 58. Among them, the hole transport layer 55, the light-emitting layers 56R, 56G, 56B, and the electron transport layer 57 are equivalent to organic layers. In addition, in this embodiment, the light-emitting layer 56R is an organic EL layer that emits red, the light-emitting layer 56G is an organic EL layer that emits green, and the light-emitting layer 56B is an organic EL layer that emits blue.

[0117] The light-emitting layers 56R, 56G, and 56B are respectively formed into patterns corresponding to light-emitting elements (sometimes also described as organic EL elements) that emit red, green, and blue. In addition, the first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 can be formed in common for multiple light-emitting elements 52R, 52G, and 52B, or can be formed for each light-emitting element. It should be noted that in order to prevent the first electrode 54 and the second electrode 58 from short-circuiting due to foreign matter, an insulating layer 59 is provided between the first electrode 54. In addition, the organic EL layer deteriorates due to moisture and oxygen, so a protective layer 60 is provided to protect the organic EL element from the influence of moisture and oxygen.

[0118] Next, an example of a method for manufacturing an organic EL display device as an electronic device is specifically described. First, a substrate 53 on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed is prepared.

[0119] Next, an acrylic resin is formed by spin coating on the substrate 53 having the first electrode 54 formed thereon, and the acrylic resin is patterned by photolithography to form an opening in the portion having the first electrode 54 formed thereon to form an insulating layer 59. The opening corresponds to a light emitting region where the light emitting element actually emits light.

[0120] Next, the substrate 53 on which the insulating layer 59 is patterned is moved into the first film forming device, and the substrate is supported by the substrate supporting unit, and a hole transport layer 55 is formed as a common layer on the first electrode 54 of the display area. The hole transport layer 55 is formed by vacuum evaporation. In fact, the hole transport layer 55 is formed to a size larger than the display area 51, so a high-precision mask is not required. Here, the film forming device used in the film forming in this step and the film forming of the following layers is the film forming device described in any of the above embodiments.

[0121] Next, the substrate 53 formed up to the hole transport layer 55 is carried into the second film forming device and supported by the substrate supporting unit. The substrate and the mask are aligned, the substrate is placed on the mask, and the red emitting layer 56R is formed on the portion of the substrate 53 where the red emitting element is arranged. According to this example, the mask and the substrate can be overlapped well, and high-precision film formation can be performed.

[0122] Similar to the film formation of the light-emitting layer 56R, the green light-emitting layer 56G is formed by the third film-forming device, and the blue light-emitting layer 56B is further formed by the fourth film-forming device. After the film formation of the light-emitting layers 56R, 56G, and 56B is completed, the electron transport layer 57 is formed in the entire display area 51 by the fifth film-forming device. The electron transport layer 57 is formed as a layer common to the three-color light-emitting layers 56R, 56G, and 56B.

[0123] The substrate formed up to the electron transport layer 57 is moved to a sputtering device to form the second electrode 58 , and then moved to a plasma CVD device to form the protective layer 60 , thereby completing the organic EL display device 50 .

[0124] If the substrate 53 on which the insulating layer 59 is patterned is exposed to an atmosphere containing moisture and oxygen during the period from when the substrate 53 is carried into the film forming apparatus to when the protective layer 60 is formed, the light-emitting layer composed of the organic EL material may be degraded by moisture and oxygen. Therefore, in this example, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0125] The film formation control method disclosed in the present invention can be appropriately used in the formation of the above-mentioned layers represented by the light-emitting layer. As a result, it is possible to perform good film formation control that improves the accuracy of measuring and controlling the film thickness in the film formation process on the substrate.

Claims

1. A film forming device, wherein the film forming device forms a film by evaporating a material on a substrate, characterized in that: have: an evaporation source, the evaporation source emitting the material; a monitoring component for measuring the amount of the material emitted from the evaporation source during film formation; a control component, the control component controlling the film forming device based on the output value of the monitoring component; a measuring unit for measuring a film thickness distribution within a surface of a film deposited on the substrate after film formation; as well as A correction unit is provided for correcting the output value of the monitoring unit based on the film thickness distribution within the plane.

2. The film forming device according to claim 1, characterized in that: The control of the control unit is applied to the substrate itself which is the measurement object of the monitoring unit. The correction performed by the correction means is applied to a substrate on which a film is formed after the substrate on which the in-plane film thickness distribution is measured by the measurement means.

3. The film forming device according to claim 1 or 2, characterized in that: The film thickness distribution is a set of film thickness values ​​within a predetermined range in a planar or linear shape on the substrate.

4. The film forming device according to claim 1 or 2, characterized in that: The evaporation source has a plurality of parts capable of independently controlling the amount of the material released, and the plurality of parts are arranged in a first direction. The evaporation source deposits the material on the substrate while moving relative to the substrate in a second direction intersecting the first direction.

5. The film forming device according to claim 4, characterized in that: The measuring unit measures the film thickness distribution within the plane in the first direction.

6. The film forming device according to claim 4, characterized in that: The monitoring component includes a plurality of quartz monitors respectively corresponding to the plurality of parts of the evaporation source.

7. The film forming device according to claim 6, characterized in that: The correction unit corrects the output values ​​of the plurality of quartz monitors, respectively, based on the film thickness distribution within the plane.

8. The film forming device according to claim 1 or 2, characterized in that: The correction means compares a target value and a measured value of the film thickness distribution within the plane, and corrects a coefficient applied to the output value of the monitoring means so that the measured value approaches the target value.

9. An electronic device manufacturing device, characterized in that: The electronic device manufacturing apparatus manufactures an electronic device using the film forming apparatus according to claim 1 or 2.

10. A film forming method, wherein the film forming method uses a film forming device for forming a film by evaporating a material on a substrate, characterized in that: have: The step of releasing the material using an evaporation source; The step of measuring the amount of the material emitted from the evaporation source during film formation using a monitoring component; The step of controlling the film forming device based on the output value of the monitoring component using a control component; A step of measuring a film thickness distribution in a surface of a film deposited on the substrate using a measuring unit after film formation; and A step of correcting the output value of the monitoring means based on the film thickness distribution within the plane using a correction means.

11. A method for manufacturing an electronic device, characterized in that: The method for manufacturing an electronic device uses the film forming method according to claim 10 to manufacture an electronic device.

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