A high temperature annealing cooling device for wafer processing

Abstract

The present invention relates to the field of wafer annealing technology, and discloses a high-temperature annealing cooling device for wafer processing, including a feed box, a cooling cavity is provided inside the feed box, a feed port is provided on the front end surface of the feed box and is connected to the cooling cavity, a lifting cylinder is vertically installed at the lower end of the cooling cavity, a lifting rod is movably provided inside the lifting cylinder, and the lifting rod extends into the cooling cavity. The high-temperature annealing cooling device for wafer processing described in the present invention is designed with a vacuum suction pump, and the first annealing chamber is vacuumed to facilitate the entry of inert gas as protective gas; the air sucked by the second vacuum suction pump is injected into the annular airbag through the first air inlet pipe, so that the annular airbag is inflated and fully contacts the outer edge of the sealing plate, thereby strengthening the sealing effect and putting the annealing chamber in a sealed state; the air sucked by the third vacuum suction pump is injected into the gas storage tank through the second air inlet pipe as a spare gas for blowing, thereby achieving the effect of energy saving.

Description

Technical Field

[0001] The invention relates to the technical field of wafer annealing, and in particular to high-temperature annealing cooling equipment for wafer processing. Background Art

[0002] Semiconductor wafers are the basis of chip processing, and their original material is silicon. After high-purity polysilicon is dissolved, silicon crystal seeds are added, and then slowly pulled out to form cylindrical single crystal silicon. After grinding, polishing, and slicing, the silicon crystal rod forms a silicon wafer, that is, a wafer; the wafer needs to be annealed and cooled during processing. The purpose is to use thermal energy to cause the atoms in the wafer to rearrange the lattice position, so as to reduce lattice defects, activate doping elements, improve the performance of the material, and improve the quality and reliability of the wafer. Therefore, annealing and cooling equipment will be used.

[0003] Existing annealing and cooling equipment has many technical defects when in use. First, the wafer is generally supported by heat-resistant feet in the annealing furnace, but the feet will occupy and block the local position of the wafer and interfere with the effective heat conduction between the upper and lower parts, thereby causing uneven heating of the wafer and reducing the quality of the wafer; second, the wafer is easily oxidized by air during the heating process, resulting in reduced wafer quality, and the heat in the annealing furnace is easily dissipated, the energy utilization rate is low, and the environmental protection is poor; third, the heated wafer carries a high temperature, and on the one hand, it cannot be immediately placed in room temperature for cooling, otherwise the crystal structure may not be able to form a regular structure, resulting in crystal defects and performance degradation, but the current annealing furnace cannot perform gradient cooling, and on the other hand, it takes a long time for the wafer to cool naturally, which will lead to reduced work efficiency of the entire wafer processing process.

[0004] In summary, considering that the existing facilities cannot meet the work requirements, we propose a high-temperature annealing cooling equipment for wafer processing. Summary of the invention

[0005] The main purpose of the present invention is to provide a high-temperature annealing cooling device for wafer processing, which can effectively solve the problems in the background technology.

[0006] To achieve the above object, the technical solution adopted by the present invention is:

[0007] A high-temperature annealing cooling device for wafer processing comprises a feed box, a cooling cavity is provided inside the feed box, a feed port is provided on the front end face of the feed box and at the place where it communicates with the cooling cavity, a lifting cylinder is vertically installed at the lower end of the cooling cavity, a lifting rod is movably provided inside the lifting cylinder, the lifting rod extends into the cooling cavity, a sealing plate is welded on the top of the lifting rod, a receiving rod is connected to the middle position of the upper end face of the sealing plate, and the receiving rod is used to place wafers flat.

[0008] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, an annealing furnace is arranged at the middle position of the upper end of the feed box, an annealing chamber is opened inside the annealing furnace, a connecting opening is opened between the annealing chamber and the cooling cavity, and the connecting opening is for the sealing plate and the wafer to pass through.

[0009] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, an airbag sealing structure is installed on the connecting port.

[0010] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, wherein: the top of the annealing chamber is riveted with an insulation plate, and the lower end surface of the insulation plate is evenly installed with several groups of first heaters, and the number of the first heaters is preferably 4-6 groups; and several groups of second heaters are evenly distributed around the furnace wall of the annealing furnace, and the number of the second heaters is preferably 4-6 groups.

[0011] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, a vacuum suction pump is installed in the middle position of the upper end surface of the annealing furnace, the suction pipe of the vacuum suction pump extends into the interior of the annealing chamber, and the exhaust port of the vacuum suction pump is connected to a porous joint.

[0012] As a preferred embodiment of the high-temperature annealing cooling equipment for wafer processing described in the present invention, the airbag sealing structure includes an airbag storage rack, an annular airbag, a first air inlet pipe and a pressure relief valve. The airbag storage rack is fixed on the inner side surface of the connecting port. An annular airbag is glued to the inner side surface of the airbag storage rack. The annular airbag partially extends inward to act on the outer edge of the sealing plate. The side surface of the annular airbag passes through the airbag storage rack and extends outward to be provided with a first air inlet pipe. The first air inlet pipe passes through the upper end surface of the feed box and is connected to the porous joint. The outer side surface of the airbag storage rack is equipped with a pressure relief valve connected to the inside of the annular airbag.

[0013] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, wherein: a support seat is riveted on the inner surface of the top of the annealing furnace, an annular outer shell is fixed at the middle position of the lower end surface of the support seat, an empty groove is formed at the inner middle position of the inner side of the annular outer shell, a double gear is rotatably arranged inside the annular outer shell, the double gear includes inner teeth and outer teeth, and the upper and lower end surfaces of the double gear are symmetrically provided with rotation grooves, and a positioning block extending into the rotation groove is fixed inside the annular outer shell, the number of the positioning blocks is preferably 2-4 groups, and the positioning block and the rotation groove fit together and move relative to each other.

[0014] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, wherein: a driving gear is meshed with the outer teeth of the double gear, and the driving gear is sleeved on the output shaft of the servo motor, and the servo motor extends upward from the upper end surface of the annealing furnace, and a plurality of groups of meshing internal gears are evenly distributed on the inner teeth of the double gear, and the internal gears are sleeved on the long wheel shaft, and the upper and lower ends of the long wheel shaft are fixed by the bearing seat and the inner wall of the annular outer shell, and a clamp is movably provided on the upper half of each group of the internal gears, and the number of the internal gears and the clamps is preferably 4 groups.

[0015] As a preferred embodiment of the high-temperature annealing cooling equipment for wafer processing described in the present invention, the wafer clamp includes a gear rod, a limit sleeve, a moving part, a connecting rod, a heat-resistant ceramic rod and a curved chuck, the gear rod is meshed with the upper half of the internal gear, the gear rod is movably arranged in the limit sleeve, the limit sleeve is fixed inside the annular outer shell, the end of the gear rod is provided with a moving part, the inner side of the annular outer shell is provided with a guide opening for the movement of the moving part, the lower end of the moving part is welded with a connecting rod, the lower end of the connecting rod is clamped and fixed with a heat-resistant ceramic rod, the heat-resistant ceramic rod extends into the annealing chamber, the interior of the heat insulation plate is evenly provided with strip grooves for the linear motion of the heat-resistant ceramic rods, and the lower end of the heat-resistant ceramic rod is fixed with a curved chuck that acts on the outer edge of the wafer.

[0016] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, an inert gas insulation tank is fixed to the lower end of the feed box, an insulation layer is provided on the inner surface of the inert gas insulation tank, a booster pump is installed on one side of the inert gas insulation tank, an insulation pipe is connected upward at the pump port of the booster pump, the insulation pipe extends upward into the annealing chamber, and a first one-way valve is provided at the upper end of the insulation pipe.

[0017] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, an exhaust pipe is connected to the other side of the inert gas insulation tank, an electromagnetic control valve is installed at the lower end of the exhaust pipe near the inert gas insulation tank, the exhaust pipe extends upward into the annealing chamber, and a second one-way valve is installed at the upper end of the exhaust pipe.

[0018] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, wherein: the rear end face of the feed box is riveted with a bracket, a gas tank is installed on the bracket, an annular cooling cylinder is arranged around the outside of the gas tank, cooling water is contained in the annular cooling cylinder, a second air inlet pipe is extended upward and connected to the top of the gas tank, the upper end of the second air inlet pipe is connected to a porous joint, a blow pipe is connected at the middle position of one end face of the gas tank, the number of the blow pipes is preferably 1-2 groups, a pulse valve is installed at the end of the blow pipe close to the gas tank, the blow pipe passes through the feed box and extends into the annealing chamber, and a nozzle acting on the wafer is installed at the end of the blow pipe away from the pulse valve.

[0019] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, a temperature control panel is provided at the edge of the upper end surface of the feed box.

[0020] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, wherein: legs are provided at the four corners of the lower end of the feed box, and the number of the legs is 4 groups.

[0021] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, the connecting port is larger than the area of ​​the wafer and has the same size as the sealing plate.

[0022] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, the first heater and the second heater adopt infrared light rapid heating or electromagnetic induction rapid heating.

[0023] As a preferred solution of the high-temperature annealing cooling equipment for wafer processing described in the present invention, the outer side surface of the annular outer shell is connected to a drive seat, and the lower half of the drive gear and the vacuum suction pump are located inside the drive seat.

[0024] The present invention provides a high temperature annealing cooling device for wafer processing through improvement, which has the following significant improvements and advantages compared with the prior art:

[0025] The servo motor is started, and after a series of transmissions, several groups of internal gears rotate in the same direction, thereby driving the gear rod on the clamp to move linearly and centripetally. The heat-resistant ceramic rod moves in a limited position in the strip groove, so that each group of curved chucks slowly approaches the edge of the wafer. Several groups of curved chucks work together to clamp the wafer. On the one hand, it is suitable for wafers of different sizes and can automatically limit the wafer to the center of gravity of the annealing chamber, so as to obtain a uniform heat source. On the other hand, compared with using a support foot, the clamp will not occupy and block the local position of the wafer, nor will it interfere with heat transfer.

[0026] The vacuum suction pump is designed to have three functions. First, it evacuates the annealing chamber to facilitate the entry of inert gas as protective gas. Second, the air sucked by the vacuum suction pump is injected into the annular airbag through the first air inlet pipe to inflate the annular airbag and fully contact the outer edge of the sealing plate to enhance the sealing effect and keep the annealing chamber in a sealed state. Third, the air sucked by the vacuum suction pump is injected into the gas storage tank through the second air inlet pipe as a backup gas for blowing, thereby achieving the effect of energy saving.

[0027] An inert gas insulation tank is designed. On the one hand, the electromagnetic control valve on the exhaust pipe is opened to release the inert gas in the inert gas insulation tank into the annealing chamber through the exhaust pipe, so that there is a large amount of inert gas in the annealing chamber to prevent the wafer from being oxidized when heated; on the other hand, the high-temperature inert gas in the annealing chamber is slowly sucked by the insulation pipe, and the high-temperature inert gas is transported into the inert gas insulation tank for insulation and recycled, which can reduce the energy consumption of the heater and achieve the purpose of energy saving; further, when the insulation pipe slowly sucks the high-temperature inert gas in the annealing chamber, a gradient cooling will be formed on the wafer, and the thermal radiation of the wafer itself will be combined to improve the annealing cooling effect of the wafer.

[0028] Design the spray structure, open the pulse valve, and the air in the gas tank enters the spray pipe and is then sprayed out through the nozzle. On the one hand, the outer surface of the wafer is sprayed to clean the dust to ensure the cleanliness of the wafer before annealing. On the other hand, the outer surface of the wafer is sprayed. The sprayed cold air at this time has a cooling effect, which assists in the cooling and heat dissipation of the wafer and improves the working efficiency of the entire wafer processing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic diagram of the overall structure of a high-temperature annealing cooling device for wafer processing according to the present invention in one direction;

[0030] Figure 2 This is a schematic diagram of the overall structure of a high-temperature annealing cooling device for wafer processing according to the present invention from another direction;

[0031] Figure 3 is a cross-sectional view of the cooling chamber of the present invention;

[0032] Figure 4 It is a connection diagram of the lifting cylinder of the present invention;

[0033] Figure 5 It is a schematic diagram of the structure of the annealing furnace of the present invention in one direction;

[0034] Figure 6 A schematic diagram of the structure of the annealing furnace of the present invention from another direction;

[0035] Figure 7 For the present invention Figure 5 A is an enlarged schematic diagram;

[0036] Figure 8 For the present invention Figure 6 A magnified schematic diagram of B;

[0037] Fig. 9 It is a schematic diagram of the specific structure of the airbag sealing structure of the present invention;

[0038] Fig.10 It is a schematic diagram of the external structure of the annular outer shell of the present invention;

[0039] Fig.11 It is a schematic diagram of the structure of the annular outer shell in one direction of the present invention;

[0040] Fig.12 It is a schematic diagram of the structure of the annular outer shell in another direction of the present invention;

[0041] Fig.13 It is a schematic diagram of the specific structure of the film clamp of the present invention;

[0042] Fig.14 This is a schematic diagram of the connection of the vacuum suction pump in the second embodiment of the present invention;

[0043] Fig.15 It is a schematic diagram of the blowing structure of the wafer of the present invention.

[0044] In the figure: 1, feed box; 2, cooling chamber; 3, feed port; 4, annealing furnace; 5, annealing chamber; 8, clip; 81, gear rod; 82, limit sleeve; 83, moving part; 84, connecting rod; 85, heat-resistant ceramic rod; 86, curved chuck; 9, airbag sealing structure; 91, airbag storage rack; 92, annular airbag; 93, first air inlet pipe; 94, pressure relief valve; 10, lifting cylinder; 11, lifting rod; 12, sealing plate; 13, material receiving rod; 14, wafer; 15, connecting port; 20, first heater; 21, second heater; 22, heat insulation board; 23, strip groove; 30, support seat; 3 1. Annular outer shell; 32. Double gear; 33. Rotating groove; 34. Internal gear; 35. Long wheel shaft; 36. Bearing seat; 37. Driving gear; 38. Servo motor; 40. Vacuum suction pump; 41. Porous joint; 50. Inert gas insulation tank; 51. Booster pump; 52. Insulation pipe; 53. First one-way valve; 54. Exhaust pipe; 55. Solenoid control valve; 56. Second one-way valve; 60. Bracket; 61. Gas storage tank; 62. Annular cooling cylinder; 63. Second air inlet pipe; 64. Pulse valve; 65. Blowing pipe; 66. Nozzle; 70. Temperature control panel; 71. Drive seat; 72. Guide port. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0046] Embodiment 1: Figure 1-Figure 13 As shown, this embodiment provides a high-temperature annealing cooling device for wafer processing, including a feed box 1. Support legs are arranged at the four corners of the lower end of the feed box 1 to play a supporting role. A cooling cavity 2 is opened inside the feed box 1. A feed port 3 is opened on the front end surface of the feed box 1 and the connection with the cooling cavity 2. The size of the feed port 3 can allow a clamp to be inserted. A lifting cylinder 10 is vertically installed at the lower end of the cooling cavity 2.

[0047] Specifically, a lifting rod 11 is movably arranged inside the lifting cylinder 10, and the lifting rod 11 extends into the cooling chamber 2. A sealing plate 12 is welded on the top of the lifting rod 11, and a receiving rod 13 (a suction cup structure can be added) is connected to the middle position of the upper end surface of the sealing plate 12. The receiving rod 13 is used to place the wafer 14 flatly. Figure 3-Figure 8 shown.

[0048] Furthermore, an annealing furnace 4 is provided at the middle position of the upper end of the feed box 1, and an annealing chamber 5 (the cross section of the annealing chamber 5 is circular) is provided inside the annealing furnace 4. A connecting port 15 is provided between the annealing chamber 5 and the cooling chamber 2, and the connecting port 15 is provided for the sealing plate 12 and the wafer 14 to pass through. The connecting port 15 is larger than the area of ​​the wafer 14 and has the same size as the sealing plate 12. An airbag sealing structure 9 is installed on the connecting port 15, such as Figure 7 and Figure 8 shown.

[0049] Specifically, the airbag sealing structure 9 includes an airbag storage frame 91, an annular airbag 92, a first air inlet pipe 93 and a pressure relief valve 94. Fig. 9 shown.

[0050] In the present embodiment, the airbag storage rack 91 is fixed around the inner side surface of the connecting port 15, and an annular airbag 92 is glued to the inner side surface of the airbag storage rack 91 (the annular airbag 92 is away from the heating center area and has heat resistance itself), the annular airbag 92 has effective elasticity, and a part of the annular airbag 92 extends inward to act on the outer edge of the sealing plate 12. The side of the annular airbag 92 extends outward through the airbag storage rack 91 and is provided with a first air inlet pipe 93. The first air inlet pipe 93 passes through the upper end surface of the feed box 1 and is connected to the porous joint 41. The outer side surface of the airbag storage rack 91 is provided with a pressure relief valve 94 which is connected to the inside of the annular airbag 92 and is used to release excess air in the annular airbag 92.

[0051] Among them, the top of the annealing chamber 5 is riveted with a heat insulation board 22 to achieve a heat insulation effect. Several groups of first heaters 20 are evenly installed on the lower end surface of the heat insulation board 22. Several groups of second heaters 21 are evenly distributed around the furnace wall of the annealing furnace 4. The first heater 20 and the second heater 21 use infrared light rapid heating or electromagnetic induction rapid heating. Figure 8 shown.

[0052] A vacuum suction pump 40 is installed in the middle of the upper end surface of the annealing furnace 4. The suction pipe of the vacuum suction pump 40 extends into the annealing chamber 5. The exhaust port of the vacuum suction pump 40 is connected to a porous joint 41 (the porous joint 41 includes multiple groups of joint valves, which are linked, and only one joint valve can be kept open in one direction). Figure 1-Figure 3 shown.

[0053] Furthermore, a support seat 30 is riveted to the inner surface of the top of the annealing furnace 4, and an annular outer shell 31 is fixed at the middle position of the lower end surface of the support seat 30, and an empty groove is formed at the middle position of the inner side of the annular outer shell 31, such as Fig.10 shown.

[0054] In this embodiment, a double gear 32 is rotatably arranged inside the annular outer shell 31, and the double gear 32 includes inner teeth and outer teeth. The upper and lower end surfaces of the double gear 32 are symmetrically provided with rotation grooves 33. A positioning block extending into the rotation groove 33 is fixed inside the annular outer shell 31. The positioning block and the rotation groove 33 fit together and move relative to each other, playing a role of limiting guide, such as Fig.11 and Fig.12 shown.

[0055] In this embodiment, a driving gear 37 is meshed with the outer teeth of the double gear 32, and the driving gear 37 is sleeved on the output shaft of the servo motor 38. The servo motor 38 extends upward from the upper end surface of the annealing furnace 4 and is in a fixed state. Figure 1 , Fig.11 and Fig.12 shown.

[0056] The outer side of the annular outer shell 31 is connected to a driving seat 71, and the driving gear 37 and the lower half of the vacuum suction pump 40 are located inside the driving seat 71 to store them. Fig.10 shown.

[0057] In this embodiment, a plurality of groups of meshing internal gears 34 are evenly distributed on the inner teeth of the double gear 32 (the internal gear 34 is divided into an upper half and a lower half, and the lower half meshes with the inner teeth of the double gear 32). The internal gear 34 is sleeved on the long wheel shaft 35. The upper and lower ends of the long wheel shaft 35 are fixed by the bearing seat 36 and the inner wall of the annular outer shell 31. The upper half of each group of internal gears 34 is movably provided with a clip 8, such as Fig.11 and Fig.12 shown.

[0058] Specifically, the clip 8 includes a gear rod 81, a limiting sleeve 82, a moving part 83, a connecting rod 84, a heat-resistant ceramic rod 85 and a curved clamp 86. Fig.13 shown.

[0059] In this embodiment, the gear rod 81 is meshed with the upper half of the internal gear 34, the gear rod 81 is movably arranged in the limiting sleeve 82, the limiting sleeve 82 is fixed inside the annular outer shell 31, and a moving part 83 is arranged at the end of the gear rod 81. A guide opening 72 for the moving part 83 to move is opened on the inner side of the annular outer shell 31, and the sizes of the two are matched.

[0060] In this embodiment, a connecting rod 84 is welded to the lower end of the moving part 83, and a heat-resistant ceramic rod 85 is clamped and fixed at the lower end of the connecting rod 84. The heat-resistant ceramic rod 85 extends into the annealing chamber 5, and the interior of the heat insulation plate 22 is evenly provided with strip grooves 23 (the size of the strip grooves 23 is relatively small) for the heat-resistant ceramic rod 85 to move linearly. A curved chuck 86 (the curvature of the curved chuck 86 is not greater than that of the wafer 14) is fixed to the lower end of the heat-resistant ceramic rod 85 to act on the outer edge of the wafer 14.

[0061] Furthermore, an inert gas insulation tank 50 is fixed at the lower end of the feed box 1, and an insulation layer is provided on the inner surface of the inert gas insulation tank 50, such as Figure 1-Figure 3 shown.

[0062] A booster pump 51 is installed on one side of the inert gas insulation tank 50, and an insulation pipe 52 is connected upwardly to the pump port of the booster pump 51. The insulation pipe 52 extends upward into the annealing chamber 5. A first one-way valve 53 is provided at the upper end of the insulation pipe 52. The first one-way valve 53 can only allow the inert gas to enter the insulation pipe 52 in one direction. Figure 2 shown.

[0063] The other side of the inert gas insulation tank 50 is connected to an exhaust pipe 54, and an electromagnetic control valve 55 is installed at the lower end of the exhaust pipe 54 near the position of the inert gas insulation tank 50. The exhaust pipe 54 extends upward into the annealing chamber 5, and a second one-way valve 56 is installed at the upper end of the exhaust pipe 54. The second one-way valve 56 can only allow the inert gas to be discharged into the annealing chamber 5 in one direction. Figure 1 shown.

[0064] Furthermore, a temperature control panel 70 is provided at the edge of the upper end surface of the feed box 1. A plurality of temperature sensors are installed inside the annealing chamber 5. The temperature control panel 70 adjusts the heating temperature of the heater by receiving data from the temperature sensors. Figure 1 and Figure 2 shown.

[0065] When this embodiment is in use, the wafer 14 to be processed is first placed from the feed port 3 to the upper end surface of the receiving rod 13 (as close to the center as possible) using a clamp, and then the lifting cylinder 10 is started, the lifting rod 11 rises, driving the wafer 14 on the receiving rod 13 through the connecting port 15 into the annealing chamber 5 until the wafer 14 and the curved chuck 86 are aligned, and at this time the sealing plate 12 is located above the connecting port 15.

[0066] At this time, the servo motor 38 is started to drive the driving gear 37 to rotate, and the double gear 32 on one side is decelerated by meshing. When the double gear 32 moves, several groups of internal gears 34 are simultaneously rotated in the same direction by meshing, thereby driving the gear rod 81 on the clamp 8 to move linearly and centripetally, so that the moving part 83 passes through the guide port 72. At the same time, the heat-resistant ceramic rod 85 moves in a limited position in the strip groove 23, so that each group of curved chucks 86 slowly approaches the edge of the wafer 14, and several groups of curved chucks 86 work together to clamp and fix the wafer 14 in the center.

[0067] At this time, the lifting rod 11 is retracted to separate the receiving rod 13 and the wafer 14. The wafer 14 is in a suspended state and drives the sealing plate 12 to return to the connecting port 15. At this time, the vacuum suction pump 40 is started, and the air inside the annealing chamber 5 is sucked by the suction pipe, and the air is first injected into the annular airbag 92 through the first air inlet pipe 93 (open one of the joint valves of the porous joint 41), so that the annular airbag 92 is inflated, expands outward all around, and fully contacts the outer edge of the sealing plate 12 to strengthen the sealing effect. At this time, the annealing chamber 5 is in a sealed state, and the suction pipe continues to be used to suck the air inside the annealing chamber 5 and directly discharge it outward until a vacuum state is formed in the annealing chamber 5.

[0068] At this time, the electromagnetic control valve 55 on the exhaust pipe 54 is opened, and the inert gas in the inert gas insulation tank 50 is released into the annealing chamber 5 through the exhaust pipe 54, so that there is a large amount of inert gas in the annealing chamber 5 (the pressure is consistent with the outside world). At this time, the first heater 20 and the second heater 21 are turned on to rapidly heat the annealing chamber 5, and then keep the temperature constant for a period of time, using thermal energy to cause the atoms in the wafer 14 to rearrange the lattice positions, so as to reduce lattice defects and activate the doping elements.

[0069] Then start the boost pump 51, and use the insulation pipe 52 to slowly suck the high-temperature inert gas in the annealing chamber 5. The high-temperature inert gas is transported into the inert gas insulation tank 50 for insulation and recycling, and the purpose of energy saving is achieved (the gas itself carries heat when used next time, which can reduce the energy consumption of the heater), and the temperature of the annealing chamber 5 is slowly reduced. The wafer 14 also slowly dissipates heat by thermal radiation until the temperature of the wafer 14 is lower than the temperature at which it undergoes an oxidation reaction with the air. At this time, open the pressure relief valve 94 to release the air in the annular airbag 92 to shrink it (no longer restricting the sealing plate 12), let the lifting rod 11 rise, drive the receiving rod 13 to move to the bottom of the wafer 14, and let the curved clamp 86 of the clamp 8 return to its position (release the wafer 14). At this time, let the lifting rod 11 descend again, and the receiving rod 13 and the wafer 14 return to the cooling chamber 2 for natural cooling.

[0070] Embodiment 2: Based on Embodiment 1, the wafer 14 is easily contaminated with dust during transportation, and poor cleanliness will affect the quality of the annealing process. In addition, the wafer 14 takes a long time to cool naturally in the cooling chamber 2, which will lead to reduced work efficiency. In order to solve the above two technical problems, we have the following design, such as Figure 14-15 shown.

[0071] Specifically, a bracket 60 is riveted to the rear end surface of the feed box 1, and a gas storage tank 61 is installed on the bracket 60. An annular cooling cylinder 62 is arranged around the outside of the gas storage tank 61. The annular cooling cylinder 62 fully wraps the gas storage tank 61, and cooling water is contained in the annular cooling cylinder 62. Fig.14 shown.

[0072] The top of the gas storage tank 61 extends upward and is connected to a second air inlet pipe 63, and the upper end of the second air inlet pipe 63 is connected to the porous joint 41. Fig.14 and Fig.15 shown.

[0073] Among them, a blow pipe 65 is connected to the middle position of one end surface of the gas storage tank 61, and a pulse valve 64 is installed at one end of the blow pipe 65 close to the gas storage tank 61. The blow pipe 65 passes through the feed box 1 and extends into the annealing chamber 5. The end of the blow pipe 65 away from the pulse valve 64 is installed with a nozzle 66 acting on the wafer 14. Fig.15 shown.

[0074] Furthermore, an electric vacuum suction cup is installed inside the receiving rod 13 , and a plurality of groups of adsorption holes for interacting with the wafer 14 are opened on the upper end surface of the receiving rod 13 .

[0075] When the present embodiment is in use, in the first embodiment, the vacuum suction pump 40 uses the suction pipe to suck the air inside the annealing chamber 5, and injects the remaining air into the gas tank 61 through the second air inlet pipe 63 (opening another joint valve of the porous joint 41), and the air stored in the gas tank 61 will be slowly cooled by the annular cooling cylinder 62 to keep it in a low temperature state. When the wafer 14 is placed from the feed port 3 to the upper end surface of the receiving rod 13, the electric vacuum suction cup works and uses the adsorption hole to suck the wafer 14. At this time, the pulse valve 64 is opened, and the air in the gas tank 61 enters the blowing pipe 65, and then is sprayed out through the nozzle 66 to spray and clean the outer surface of the wafer 14.

[0076] When the wafer 14 returns to the cooling chamber 2 after the annealing operation, the pulse valve 64 is opened again, and the air in the gas tank 61 enters the blowing pipe 65 and is then sprayed out through the nozzle 66 to spray the outer surface of the wafer 14. At this time, the sprayed cold air has a cooling effect, which assists in cooling and dissipating the heat of the wafer 14.

[0077] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0078] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high temperature annealing cooling device for wafer processing, comprising a feed box (1), characterized in that: A cooling chamber (2) is provided inside the feed box (1), a feed port (3) is provided at the front end surface of the feed box (1) and at the point where it communicates with the cooling chamber (2), a lifting cylinder (10) is vertically mounted at the lower end of the cooling chamber (2), a lifting rod (11) is movably arranged inside the lifting cylinder (10), the lifting rod (11) extends into the cooling chamber (2), a sealing plate (12) is welded to the top of the lifting rod (11), a material receiving rod (13) is connected to the middle position of the upper end surface of the sealing plate (12), and the material receiving rod (13) is used to place the wafer (14) flatly; An annealing furnace (4) is arranged at the middle position of the upper end of the feed box (1), an annealing chamber (5) is provided inside the annealing furnace (4), a connecting opening (15) is provided between the annealing chamber (5) and the cooling chamber (2), the connecting opening (15) is for the sealing plate (12) and the wafer (14) to pass through, and an airbag sealing structure (9) is installed on the connecting opening (15); The top of the annealing chamber (5) is riveted with a heat insulation board (22), a plurality of groups of first heaters (20) are evenly mounted on the lower end surface of the heat insulation board (22), a plurality of groups of second heaters (21) are evenly distributed around the furnace wall of the annealing furnace (4), a vacuum suction pump (40) is mounted in the middle of the upper end surface of the annealing furnace (4), a suction pipe of the vacuum suction pump (40) extends into the interior of the annealing chamber (5), and an exhaust port of the vacuum suction pump (40) is connected to a porous joint (41); The airbag sealing structure (9) comprises an airbag storage frame (91), an annular airbag (92), a first air inlet pipe (93) and a pressure relief valve (94); the airbag storage frame (91) is fixed around the inner side surface of the connecting port (15); the inner side surface of the airbag storage frame (91) is glued with the annular airbag (92); a portion of the annular airbag (92) extends inwardly to act on the outer edge of the sealing plate (12); a first air inlet pipe (93) is provided on the side surface of the annular airbag (92) extending outward through the airbag storage frame (91); the first air inlet pipe (93) passes through the upper end surface of the feed box (1) and is connected to the multi-porous joint (41); and a pressure relief valve (94) connected to the inside of the annular airbag (92) is installed on the outer side surface of the airbag storage frame (91); An inert gas insulation tank (50) is fixed at the lower end of the feed box (1), the inner surface of the inert gas insulation tank (50) is provided with an insulation layer, a booster pump (51) is installed on one side of the inert gas insulation tank (50), a pump port of the booster pump (51) is connected upwardly to an insulation pipe (52), the insulation pipe (52) extends upwardly into the annealing chamber (5), and a first non-return valve (53) is provided at the upper end of the insulation pipe (52); The other side of the inert gas insulation tank (50) is connected to an exhaust pipe (54), a solenoid control valve (55) is installed at the lower end of the exhaust pipe (54) near the inert gas insulation tank (50), the exhaust pipe (54) extends upward into the annealing chamber (5), and a second one-way valve (56) is installed at the upper end of the exhaust pipe (54); A bracket (60) is riveted to the rear end face of the feed box (1), a gas tank (61) is mounted on the bracket (60), an annular cooling tube (62) is arranged around the outside of the gas tank (61), cooling water is contained in the annular cooling tube (62), a second air inlet pipe (63) is arranged at the top of the gas tank (61) and is connected to the gas tank (61), the upper end of the second air inlet pipe (63) is connected to the porous joint (41), a blow pipe (65) is arranged at the middle position of one end face of the gas tank (61), a pulse valve (64) is mounted at one end of the blow pipe (65) close to the gas tank (61), the blow pipe (65) passes through the feed box (1) and extends into the annealing chamber (5), and a nozzle (66) for acting on the wafer (14) is mounted at one end of the blow pipe (65) away from the pulse valve (64); The vacuum suction pump (40) is started, and the air inside the annealing chamber (5) is sucked by the suction pipe. The air is first injected into the annular airbag (92) through the first air inlet pipe (93), so that the annular airbag (92) is inflated and expands outwards all around and fully contacts the outer edge of the sealing plate (12). At this time, the annealing chamber (5) is in a sealed state. The air inside the annealing chamber (5) is continuously sucked by the suction pipe and directly discharged outwards until a vacuum state is formed in the annealing chamber (5); Opening the electromagnetic control valve (55) on the exhaust pipe (54) to release the inert gas in the inert gas insulation tank (50) into the annealing chamber (5) through the exhaust pipe (54), so that the annealing chamber (5) has a large amount of inert gas and the pressure is consistent with that of the outside; The booster pump (51) is turned on, and the high-temperature inert gas in the annealing chamber (5) is slowly sucked by the insulation tube (52). The high-temperature inert gas is transported into the inert gas insulation tank (50) for insulation and circulation, and the temperature of the annealing chamber (5) is slowly reduced. The wafer (14) also slowly dissipates heat by means of thermal radiation until the temperature of the wafer (14) is lower than the temperature at which it undergoes an oxidation reaction with air. At this time, the pressure relief valve (94) is opened to release the air in the annular airbag (92) to shrink it, so that the lifting rod (11) is raised, driving the receiving rod (13) to move to the bottom of the wafer (14), and returning the curved clamp (86) of the clamp (8). At this time, the lifting rod (11) is lowered again, and the receiving rod (13) and the wafer (14) are returned to the cooling chamber (2) for natural cooling. Another joint valve of the porous joint (41) is opened, and the vacuum suction pump (40) uses the suction pipe to suck the air inside the annealing chamber (5), and injects the remaining air into the air storage tank (61) through the second air inlet pipe (63). The air stored in the air storage tank (61) is slowly cooled by the annular cooling cylinder (62), so that the high-pressure air is kept at a low temperature.

2. The high temperature annealing cooling equipment for wafer processing according to claim 1, characterized in that: A support seat (30) is riveted to the inner surface of the top of the annealing furnace (4), an annular outer shell (31) is fixed at the middle position of the lower end surface of the support seat (30), an empty groove is formed at the inner middle position of the annular outer shell (31), a double gear (32) is rotatably arranged inside the annular outer shell (31), the double gear (32) comprises inner teeth and outer teeth, and a rotation groove (33) is symmetrically formed on the upper and lower end surfaces of the double gear (32), and a positioning block extending into the rotation groove (33) is fixed inside the annular outer shell (31), and the positioning block and the rotation groove (33) fit each other and move relative to each other.

3. The high temperature annealing cooling equipment for wafer processing according to claim 2, characterized in that: A driving gear (37) is meshed with the outer teeth of the double gear (32), and the driving gear (37) is sleeved on the output shaft of a servo motor (38). The servo motor (38) extends upward from the upper end surface of the annealing furnace (4). A plurality of groups of meshing internal gears (34) are evenly distributed on the inner teeth of the double gear (32), and the internal gears (34) are sleeved on the long wheel shaft (35). The upper and lower ends of the long wheel shaft (35) are fixed by a bearing seat (36) and the inner wall of the annular outer shell (31), and a clip (8) is movably provided on the upper half of each group of the internal gears (34).

4. The high temperature annealing cooling equipment for wafer processing according to claim 3, characterized in that: The clip (8) comprises a gear rod (81), a limiting sleeve (82), a moving part (83), a connecting rod (84), a heat-resistant ceramic rod (85) and a curved clamp (86); the gear rod (81) is meshed with an upper portion of an internal gear (34); the gear rod (81) is movably arranged in the limiting sleeve (82); the limiting sleeve (82) is fixed inside an annular outer shell (31); the end of the gear rod (81) is provided with a moving part (83); the inner side of the annular outer shell (31) is provided with a connecting rod (84); A guide opening (72) for movement of a movable portion (83), a connecting rod (84) being welded to the lower end of the movable portion (83), a heat-resistant ceramic rod (85) being clamped and fixed at the lower end of the connecting rod (84), the heat-resistant ceramic rod (85) extending into the annealing chamber (5), the interior of the heat insulation plate (22) being evenly provided with strip grooves (23) for linear movement of the heat-resistant ceramic rod (85), and a curved chuck (86) for acting on the outer edge of the wafer (14) being fixed to the lower end of the heat-resistant ceramic rod (85).

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