Integrated optoelectronic oscillator

Abstract

The present disclosure provides an integrated optoelectronic oscillator, comprising: a laser for generating a first optical carrier, the laser being a broadband tunable laser; the first light splitting waveguide is used for dividing the first optical carrier into a first branch optical carrier and a second branch optical carrier, the first branch optical carrier is propagated along a first branch, and the second branch optical carrier is propagated along a second branch; the electro-optical modulator is used for modulating the first electric signal to a first branch optical carrier to obtain a first modulated optical signal; the high-Q resonator is used for delaying and filtering the first modulated optical signal to obtain a second modulated optical signal; the light combination waveguide is used for carrying out beam combination on the second branch light carrier and the second modulation light signal to obtain a third modulation light signal; and the photoelectric detector is used for converting the third modulation optical signal into a second electric signal. According to the integrated optoelectronic oscillator, the laser with the tunable broadband and the high-Q resonator are adopted, the output frequency of the integrated optoelectronic oscillator can be changed, and the integrated optoelectronic oscillator with the tunable broadband is achieved.

Description

Technical Field

[0001] The present disclosure relates to the field of optoelectronic oscillators, and in particular to an integrated optoelectronic oscillator. Background Art

[0002] Optoelectronic oscillators have made significant research progress in the past few decades. Currently, most optoelectronic oscillators are built using discrete optoelectronic devices, which have disadvantages such as large size and high power consumption. By integrating the various optoelectronic devices required for optoelectronic oscillators on-chip, the size and power consumption of optoelectronic oscillators can be greatly reduced.

[0003] However, the existing integrated optoelectronic oscillator has a limited filter tuning range and a short energy storage time, which results in a limited frequency tunable range and phase noise characteristics of the existing integrated optoelectronic oscillator, making it difficult to meet the needs of practical application systems. Summary of the invention

[0004] In view of the above problems, an embodiment of the present disclosure provides an integrated optoelectronic oscillator.

[0005] One aspect of the present disclosure provides an integrated optoelectronic oscillator, including: a laser, used to generate a first optical carrier, the laser being a broadband tunable laser; a first optical splitting waveguide, used to split the first optical carrier into a first branch optical carrier and a second branch optical carrier, the first branch optical carrier propagating along the first branch, and the second branch optical carrier propagating along the second branch; an electro-optical modulator, used to modulate a first electrical signal onto the first branch optical carrier to obtain a first modulated optical signal; a high-Q resonator, used to delay and filter the first modulated optical signal to obtain a second modulated optical signal, the high-Q resonator being tunable, and the output frequency of the integrated optoelectronic oscillator being the difference between the light emission frequency of the laser and the frequency corresponding to the resonance peak of the high-Q resonator; an optical combining waveguide, used to combine the second branch optical carrier and the second modulated optical signal to obtain a third modulated optical signal; and a photodetector, used to convert the third modulated optical signal into a second electrical signal.

[0006] According to an embodiment of the present disclosure, the Q value of the high-Q resonator is greater than 1x10 6 ; and the bandwidth range of the resonance peak of the high-Q resonator is 0~500MHz.

[0007] According to an embodiment of the present disclosure, an integrated optoelectronic oscillator includes a high-Q resonator or a resonator group consisting of a plurality of high-Q resonators connected in series.

[0008] According to an embodiment of the present disclosure, types of electro-optic modulators include intensity modulators, phase modulators, dual parallel Mach-Zehnder modulators, and polarization modulators.

[0009] According to an embodiment of the present disclosure, the integrated optoelectronic oscillator also includes: a substrate; a laser, a first splitter waveguide, an electro-optical modulator, a high-Q resonator, a combining waveguide and a photodetector are arranged on one side of the substrate to form an integrated optoelectronic oscillator loop; the types of substrates include silicon substrates, indium phosphide substrates and lithium niobate substrates.

[0010] According to an embodiment of the present disclosure, the integrated optoelectronic oscillator loop also includes: an optical amplifier for amplifying any one or more optical signals among the first optical carrier, the first branch optical carrier, the second branch optical carrier, the first modulated optical signal, the second modulated optical signal and the third modulated optical signal; at least one section of optical fiber is arranged between any two adjacent components among the electro-optic modulator, the high-Q resonator, the combined optical waveguide and the photodetector.

[0011] According to an embodiment of the present disclosure, the integrated optoelectronic oscillator further includes: a feedback module, configured to amplify and split the second electrical signal to obtain the first electrical signal and an output electrical signal.

[0012] According to an embodiment of the present disclosure, the feedback module includes: an electric amplifier for amplifying the second electric signal; a power divider for splitting the amplified second electric signal into a first electric signal and an output electric signal; wherein the photodetector, the electric amplifier, the power divider and the electro-optical modulator are connected via a microwave transmission line to form a circuit, and the circuit includes at least one electric amplifier.

[0013] According to an embodiment of the present disclosure, the feedback module includes: a power divider, used to split the second electrical signal into a third electrical signal and an output electrical signal; and an electrical amplifier, used to amplify the third electrical signal to obtain the first electrical signal.

[0014] According to an embodiment of the present disclosure, the integrated optoelectronic oscillator also includes: a second splitter waveguide, used to divide the third modulated optical signal into multiple fourth modulated optical signals; a combiner, used to combine the electrical signals converted from the multiple fourth modulated optical signals, and output the combined electrical signals to the power divider; wherein each fourth modulated optical signal propagates along multiple third branches respectively, and each third branch includes a photodetector and at least one electrical amplifier.

[0015] According to an embodiment of the present disclosure, a broadband tunable laser and a high-Q resonator with tunability are provided in the integrated optoelectronic oscillator of the present disclosure. Based on the adjustment of the light emission frequency of the laser and the resonance peak of the high-Q resonator, the output frequency of the integrated optoelectronic oscillator can be changed, thereby realizing a broadband tunable integrated optoelectronic oscillator.

[0016] In addition, by using a high-Q resonator with a narrow-band resonance peak, the optical signal can be delayed, thereby reducing the phase noise of the integrated optoelectronic oscillator. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above contents and other objects, features and advantages of the present disclosure will become more apparent through the following description of the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0018] Figure 1 The structure diagram of the integrated optoelectronic oscillator according to the embodiment of the present disclosure is schematically shown;

[0019] Figure 2 The schematic diagram of the integrated optoelectronic oscillator according to the embodiment of the present disclosure is shown;

[0020] Figure 3 The structure diagram of an integrated optoelectronic oscillator provided with an optical amplifier according to an embodiment of the present disclosure is schematically shown;

[0021] Figure 4 The structure diagram of the feedback module in the integrated optoelectronic oscillator according to the embodiment of the present disclosure is schematically shown;

[0022] Figure 5 The internal structure diagram of the feedback module in the integrated optoelectronic oscillator according to the embodiment of the present disclosure is schematically shown;

[0023] Figure 6 The internal structure diagram of the feedback module in the integrated optoelectronic oscillator according to another embodiment of the present disclosure is schematically shown;

[0024] Figure 7 The diagram schematically shows a multi-loop structure in an integrated optoelectronic oscillator according to an embodiment of the present disclosure.

[0025] [Description of Reference Numerals]

[0026] 1-laser; 2-first splitter waveguide; 3-electro-optic modulator; 4-high-Q resonator; 5-combining waveguide; 6-photodetector; 7-optical amplifier; 8-feedback module; 81-electric amplifier; 82-power divider; 9-second splitter waveguide; 10-combiner. DETAILED DESCRIPTION

[0027] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0028] It should be noted that in the drawings or descriptions, similar or identical parts use the same figure numbers. The technical features in the various embodiments exemplified in the specification can be freely combined to form a new solution without conflict. In addition, each claim can be used as an embodiment alone or the technical features in each claim can be combined as a new embodiment. In the drawings, the shape or thickness of the embodiment can be expanded and simplified or conveniently indicated. Furthermore, the elements or implementations not shown or described in the drawings are in a form known to a person of ordinary skill in the art. In addition, although demonstrations of parameters containing specific values ​​may be provided herein, it should be understood that the parameters do not need to be exactly equal to the corresponding values, but can be approximated to the corresponding values ​​within an acceptable error tolerance or design constraint.

[0029] Unless there are technical obstacles or contradictions, the above-mentioned various embodiments of the present disclosure can be freely combined to form additional embodiments, and these additional embodiments are all within the protection scope of the present disclosure.

[0030] Although the present disclosure is described in conjunction with the accompanying drawings, the embodiments disclosed in the accompanying drawings are intended to exemplify the preferred embodiments of the present disclosure and should not be construed as limiting the present disclosure. The dimensional ratios in the accompanying drawings are merely illustrative and should not be construed as limiting the present disclosure.

[0031] Although some embodiments of the present general inventive concept have been shown and described, it will be appreciated by those skilled in the art that changes may be made to these embodiments without departing from the principles and spirit of the present general inventive concept, the scope of which is defined by the claims and their equivalents.

[0032] Figure 1 The structure of an integrated optoelectronic oscillator according to an embodiment of the present disclosure is schematically shown. Figure 2 The principle diagram of an integrated optoelectronic oscillator according to an embodiment of the present disclosure is schematically shown.

[0033] According to the embodiments of the present disclosure, Figure 1As shown, the present disclosure provides an integrated optoelectronic oscillator, including: a laser 1, which is used to generate a first optical carrier, and the laser is a broadband tunable laser. A first splitter waveguide 2, which is used to divide the first optical carrier into a first branch optical carrier and a second branch optical carrier, the first branch optical carrier propagates along the first branch, and the second branch optical carrier propagates along the second branch. An electro-optical modulator 3, which is used to modulate a first electrical signal onto the first branch optical carrier to obtain a first modulated optical signal. A high-Q resonator 4, which is used to delay and filter the first modulated optical signal to obtain a second modulated optical signal, the high-Q resonator 4 is tunable, and the output frequency of the integrated optoelectronic oscillator is the difference between the light emission frequency of the laser 1 and the frequency corresponding to the resonance peak of the high-Q resonator 4. A combining waveguide 5, which is used to combine the second branch optical carrier and the second modulated optical signal to obtain a third modulated optical signal. A photodetector 6, which is used to convert the third modulated optical signal into a second electrical signal.

[0034] In some embodiments, laser 1 is used to provide a first optical carrier for the device, and there are two options for the band of the optical carrier it emits, one is the C band, corresponding to the frequency of 191.6-195.9THz, and the other is the O band, corresponding to the frequency of 220.6-238THz.

[0035] The laser 1, the second splitter waveguide 2, the electro-optic modulator 3, the high-Q resonator 4, the optical combining waveguide 5 and the photodetector 6 of the integrated optoelectronic oscillator provided in this embodiment are connected, for example, by an integrated optical waveguide to form an optical path.

[0036] Its working principle is as follows: the first optical carrier emitted by the laser 1 is first received by the first optical splitter waveguide 2 and is divided into a first branch optical carrier and a second branch optical carrier, wherein the first branch optical carrier is modulated by the electro-optical modulator 3 and then sent to the high-Q resonator 4 for delay and filtering. A modulated sideband is selected by the high-Q resonator 4, and a second modulated optical signal of carrier suppressed single sideband modulation is output at the download end of the high-Q resonator 4. The second modulated optical signal and the second branch optical carrier are combined by the optical combiner waveguide 5 and sent to the photodetector 6 together to form a second electrical signal through photoelectric conversion.

[0037] like Figure 2 As shown, the above process can form a microwave photon filter, the center frequency of which is equal to the difference between the frequency of the optical carrier emitted by the laser 1 and the resonance peak of the high-Q resonator 4. Therefore, the center frequency of the microwave photon filter can be tuned by changing the emission frequency of the laser 1. With the help of the broadband tunable laser 1, broadband adjustable microwave signal generation can be achieved.

[0038] According to an embodiment of the present disclosure, the Q value of the high-Q resonator 4 is greater than 1×10 6 And the bandwidth range of the resonance peak of the high-Q resonator 4 is 0~500MHz.

[0039] In some embodiments, the present embodiment uses a Q value greater than 1x10 6 The high-Q resonator 4 is used as an energy storage element, and its resonance stability is superior to that of the low-Q resonator, and its bandwidth is narrower and the energy loss is lower. Because the delay of the optical signal is inversely proportional to the resonance peak bandwidth of the high-Q resonator 4, the narrower the resonance peak bandwidth of the high-Q resonator 4, the longer the delay. That is, when the resonance peak bandwidth of the high-Q resonator 4 is between 0 and 500 MHz, the closer the resonance peak bandwidth of the high-Q resonator 4 is to 0 MHz, the longer its delay. And because the phase noise and delay are inversely proportional to the square, the longer the delay, the lower the phase noise of the integrated optoelectronic oscillator in the embodiment of the present disclosure. Therefore, by adopting a resonator with a high Q value, the generation of microwave signals with low phase noise can be achieved.

[0040] According to an embodiment of the present disclosure, the integrated optoelectronic oscillator includes one high-Q resonator 4 or a resonator group consisting of a plurality of high-Q resonators 4 connected in series.

[0041] In some embodiments, the high-Q resonators 4 used for integration all have narrowband resonance peaks, which can delay and filter the first modulated optical signal, respectively achieving reduction of the phase noise of the integrated optoelectronic oscillator and selection of the output frequency.

[0042] In order to improve the delay and filtering effects, multiple high-Q resonators can also be connected in series at the same time, which can further delay and filter the first modulated optical signal, so that the phase noise of the integrated optoelectronic oscillator is lower.

[0043] According to an embodiment of the present disclosure, types of the electro-optic modulator 3 include an intensity modulator, a phase modulator, a dual parallel Mach-Zehnder modulator, and a polarization modulator.

[0044] In some embodiments, an intensity modulator can be used to modulate the optical carrier. The intensity modulator changes the loss or reflection coefficient of the first branch optical carrier during transmission by adjusting parameters such as current, voltage, and temperature, thereby controlling the intensity of the first branch optical carrier and obtaining a first modulated optical signal, which is suitable for optical fiber communication and laser radar scenarios to improve signal transmission quality.

[0045] A phase modulator can also be used to modulate the optical carrier. The phase modulator uses the electro-optical effect to change the refractive index of the first branch optical carrier in the electro-optical crystal by adjusting parameters such as the electric field and current, thereby changing the phase of the first branch optical carrier to obtain a first modulated optical signal, which is suitable for high-speed optical communication scenarios to improve bandwidth utilization.

[0046] A dual parallel Mach-Zehnder modulator can also be used to modulate the optical carrier. A dual parallel Mach-Zehnder modulator is a modulator that integrates two parallel Mach-Zehnder modulators (MZM). It contains three DC input terminals, of which MZM3 serves as the main modulator, and MZM1 and MZM2 serve as sub-modulators, located in the upper and lower arms of the main modulator, respectively. It first divides the first branch optical carrier into two paths, modulates them respectively through two sub-modulators, and then merges them again and further modulates them through the main modulator. By controlling the DC bias voltage and RF signal of each modulator, complex modulation of the amplitude, phase and frequency of the first branch optical carrier can be achieved, which is suitable for complex signal modulation scenarios to increase the modulation rate and reduce transmission loss.

[0047] Polarization modulators can also be used to modulate the optical carrier. Polarization modulators are a special type of optical modulator that does not directly change the amplitude or phase of light to modulate the first branch optical carrier, but rather modulates the first branch optical carrier by changing the polarization state of the first branch optical carrier. They have strong anti-polarization performance and are suitable for polarization control scenarios to improve signal-to-noise ratio and spectrum efficiency.

[0048] According to an embodiment of the present disclosure, the integrated optoelectronic oscillator further includes: a substrate. The laser 1, the first splitting waveguide 2, the electro-optic modulator 3, the high-Q resonator 4, the combined optical waveguide 5 and the photodetector 6 are arranged on one side of the substrate to form an integrated optoelectronic oscillator loop. The types of substrates include silicon substrates, indium phosphide substrates and lithium niobate substrates.

[0049] In some embodiments, silicon can be used as the substrate for the integrated optoelectronic oscillator loop. Silicon has high crystallinity and surface finish, high quality and stability. Using silicon as a substrate can bring higher electrical performance and stability to the device.

[0050] Indium phosphide can also be used as the substrate for the integrated optoelectronic oscillator loop. Indium phosphide has a high electron saturation velocity and good thermal conductivity. Using indium phosphide as a substrate helps dissipate heat from the device and improves the stability and reliability of the device.

[0051] Lithium niobate can also be used as a substrate for integrated optoelectronic oscillator loops. The physical and chemical properties of lithium niobate are quite stable, easy to process, and not easy to deliquesce, which allows it to maintain stable performance in various environments. Devices using lithium niobate as a substrate tend to have a longer service life and reduce maintenance and replacement costs.

[0052] Figure 3 The structure of an integrated optoelectronic oscillator provided with an optical amplifier according to an embodiment of the present disclosure is schematically shown.

[0053] According to the embodiments of the present disclosure, Figure 3As shown, the integrated optoelectronic oscillator loop also includes: an optical amplifier 7, which is used to amplify any one or more optical signals among the first optical carrier, the first branch optical carrier, the second branch optical carrier, the first modulated optical signal, the second modulated optical signal and the third modulated optical signal. At least one section of optical fiber is arranged between any two adjacent components among the electro-optic modulator 3, the high-Q resonator 4, the optical waveguide 5 and the photodetector 6.

[0054] In some embodiments, the optical amplifier 7 can enhance the input weak optical signal to a higher power level, so that the optical signal can be transmitted over a longer distance while maintaining a higher signal quality. Therefore, in order to improve the signal quality, an optical amplifier 7 can be set between any two adjacent components in the above-mentioned integrated optoelectronic oscillator loop to amplify any one or more optical signals of the first optical carrier, the first branch optical carrier, the second branch optical carrier, the first modulated optical signal, the second modulated optical signal and the third modulated optical signal to promote oscillation.

[0055] Preferably, the optical amplifier 7 is provided between the optical waveguide 5 and the photodetector 6 in the integrated optoelectronic oscillator loop, which has the lowest power consumption and the best effect.

[0056] Low-loss optical fiber significantly increases the transmission distance of signals by reducing the attenuation of optical signals during transmission. Compared with ordinary optical fiber, low-loss optical fiber has lower attenuation and can support optical signals to maintain sufficient intensity over longer distances. Therefore, in order to reduce the energy loss of optical signals during transmission, one or more sections of low-loss optical fiber with a loss of 0.2 to 0.3 dB / km can be set at any position between the above components, which is equivalent to performing multiple additional delay operations, which can further increase the total delay and reduce phase noise.

[0057] Figure 4 The structure diagram of the feedback module in the integrated optoelectronic oscillator according to the embodiment of the present disclosure is schematically shown.

[0058] According to the embodiments of the present disclosure, Figure 4 As shown, the integrated optoelectronic oscillator further includes: a feedback module 8, which is used to amplify and split the second electrical signal to obtain the first electrical signal and the output electrical signal.

[0059] In some embodiments, the feedback module 8 is used to receive the second electrical signal sent by the photodetector 6, and obtain the first electrical signal and the output electrical signal by amplifying and splitting the second electrical signal. The first electrical signal is fed back to the electro-optic modulator 3 to form an integrated optoelectronic oscillator loop, and the output electrical signal is transmitted to the outside of the integrated optoelectronic oscillator cavity.

[0060] It should be noted that the feedback module 8 in the embodiment of the present disclosure is an abstract virtual module, which in essence may be composed of an electrical amplifier 81 and a power divider 82, for example, to achieve amplification and splitting of the second electrical signal. The internal structure of the feedback module 8 will be specifically described later.

[0061] Figure 5 The internal structure of the feedback module in the integrated optoelectronic oscillator according to the embodiment of the present disclosure is schematically shown.

[0062] According to the embodiments of the present disclosure, Figure 5 As shown, the feedback module 8 includes, for example: an electric amplifier 81 for amplifying the second electric signal. A power divider 82 for splitting the amplified second electric signal into a first electric signal and an output electric signal. The photodetector 6, the electric amplifier 81, the power divider 82 and the electro-optical modulator 3 are connected via a microwave transmission line to form a circuit, and the circuit includes at least one electric amplifier 81.

[0063] In some embodiments, the electric amplifier 81 and the power divider 82 together constitute the feedback module 8. The second electric signal output by the electro-optical detector 6 is first received by the electric amplifier 81, and the electric amplifier 81 amplifies the received second electric signal and then transmits the amplified second electric signal to the power divider 82. The power divider 82 splits the received second electric signal to obtain a first electric signal and an output electric signal, and then feeds the first electric signal back to the electro-optical modulator 3, and outputs the output electric signal to the outside of the integrated optoelectronic oscillator cavity.

[0064] The photodetector 6, the electric amplifier 81, the power divider 82 and the electro-optical modulator 3 are connected by a microwave transmission line to form a circuit, which includes at least one electric amplifier 81. Multiple electric amplifiers can be placed at any position in the circuit to further amplify the signal. For example, the electric amplifier 81 can be placed between the photodetector 6 and the power divider 82 to further amplify the second electric signal so as to perform more accurate subsequent processing on the second electric signal. The electric amplifier 81 can also be placed between the power divider 82 and the electro-optical modulator 3 to further amplify the first electric signal.

[0065] Figure 6 The internal structure of a feedback module in an integrated optoelectronic oscillator according to another embodiment of the present disclosure is schematically shown.

[0066] According to the embodiments of the present disclosure, Figure 6 As shown, the feedback module 8 includes, for example: a power divider 82, used to split the second electrical signal into a third electrical signal and an output electrical signal; and an electrical amplifier 81, used to amplify the third electrical signal to obtain a first electrical signal.

[0067] In some embodiments, the power divider 82 and the electric amplifier 81 together constitute the feedback module 8. The second electric signal output by the electro-optical detector 6 is first received by the power divider 82, and the power divider 82 splits the received second electric signal to obtain a third electric signal and an output electric signal. The third electric signal is then transmitted to the electric amplifier 81, and the output electric signal is directly output to the outside of the integrated optoelectronic oscillator cavity. After the electric amplifier 81 amplifies the received third electric signal, it obtains the first electric signal, and feeds the first electric signal back to the electro-optical modulator 3.

[0068] Figure 7 The diagram schematically shows a multi-loop structure in an integrated optoelectronic oscillator according to an embodiment of the present disclosure.

[0069] According to the embodiments of the present disclosure, Figure 7 As shown, the integrated optoelectronic oscillator further includes: a second splitting waveguide 9, which is used to split the third modulated optical signal into multiple fourth modulated optical signals. A combiner 10, which is used to combine the electrical signals converted from the multiple fourth modulated optical signals, and output the combined electrical signals to the power divider 82. Each fourth modulated optical signal propagates along multiple third branches, and each third branch includes a photodetector 6 and at least one electrical amplifier 81.

[0070] In some embodiments, the second splitter waveguide 9 is used to split the third modulated optical signal transmitted from the combining waveguide 5 into multiple fourth modulated optical signals, and each third branch, for example, includes a photodetector 6 and at least one electrical amplifier 81, wherein the photodetector 6 is used to convert the incoming fourth modulated optical signal into an electrical signal, and then transmit it to the electrical amplifier 81 for amplification.

[0071] Preferably, the integrated optoelectronic oscillator comprises two third branches. Each third branch may also be provided with more electrical amplifiers 81 to further amplify the signal to promote oscillation.

[0072] The electrical signals converted from the multiple fourth modulated optical signals are uniformly combined by the combiner 10 to form a combined electrical signal which is then output to the power divider 82. The power divider 82 splits the received electrical signal combined by the combiner 10 into a first electrical signal and an output electrical signal. The first electrical signal is fed back to the electro-optical modulator 3, and the output electrical signal is output to the outside of the integrated optoelectronic oscillator cavity. Through the above connection method, an integrated optoelectronic oscillator multi-loop is formed, which can improve the mode selection effect and achieve better signal output.

[0073] It should be understood that the specific order or hierarchy of steps in the disclosed process is an example of an exemplary method. Based on design preferences, it should be understood that the specific order or hierarchy of steps in the process can be rearranged without departing from the scope of protection of the present disclosure. The attached method claims present the elements of the various steps in an exemplary order and are not intended to be limited to a specific order or hierarchy.

[0074] It should also be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "back", "left", "right", etc., are only reference directions of the drawings and are not intended to limit the scope of protection of the present disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or configurations will be omitted when they may cause confusion in the understanding of the present disclosure. In addition, the shapes, sizes, and positional relationships of the components in the drawings do not reflect the actual sizes, proportions, and actual positional relationships.

[0075] In the above detailed description, various features are grouped together in a single embodiment to simplify the disclosure. This method of disclosure should not be interpreted as reflecting an intention that the embodiments of the claimed subject matter require more features than are clearly stated in each claim. On the contrary, as reflected in the attached claims, the disclosure is in a state of having less than all the features of the disclosed individual embodiments. Therefore, the attached claims are hereby expressly incorporated into the detailed description, with each claim standing on its own as a separate preferred embodiment of the disclosure.

[0076] In addition, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. With respect to the term "comprising" used in the specification or claims, the word is covered in a manner similar to the term "including", as explained in terms of "including," used as a transitional word in the claims. Any term "or" used in the specification of the claims is intended to mean "non-exclusive or".

[0077] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present disclosure. It should be understood that the above description is only a specific embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. An integrated optoelectronic oscillator, characterized in that: include: A laser (1) for generating a first optical carrier wave, wherein the laser (1) is a broadband tunable laser; A first optical splitting waveguide (2) is used to split the first optical carrier into a first branch optical carrier and a second branch optical carrier, the first branch optical carrier propagates along the first branch, and the second branch optical carrier propagates along the second branch; An electro-optical modulator (3) is used to modulate the first electrical signal onto the first branch optical carrier to obtain a first modulated optical signal; A high-Q resonator (4) is used to delay and filter the first modulated optical signal to obtain a second modulated optical signal, the high-Q resonator (4) being tunable, and the output frequency of the integrated optoelectronic oscillator being the difference between the light emission frequency of the laser (1) and the frequency corresponding to the resonance peak of the high-Q resonator (4); An optical combining waveguide (5) is used to combine the second branch optical carrier and the second modulated optical signal to obtain a third modulated optical signal; A photodetector (6) is used to convert the third modulated optical signal into a second electrical signal.

2. The integrated optoelectronic oscillator according to claim 1, characterized in that: The Q value of the high-Q resonator (4) is greater than 1x10 6 ; and the bandwidth range of the resonance peak of the high-Q resonator (4) is 0~500MHz.

3. The integrated optoelectronic oscillator according to claim 2, characterized in that: The integrated optoelectronic oscillator comprises one high-Q resonator (4) or a resonator group consisting of a plurality of high-Q resonators (4) connected in series.

4. The integrated optoelectronic oscillator according to claim 1, characterized in that: The types of the electro-optic modulator (3) include intensity modulator, phase modulator, dual parallel Mach-Zehnder modulator and polarization modulator.

5. The integrated optoelectronic oscillator according to claim 1, characterized in that: Also includes: substrate; The laser (1), the first splitting waveguide (2), the electro-optic modulator (3), the high-Q resonator (4), the optical combining waveguide (5) and the photodetector (6) are arranged on one side of the substrate to form an integrated optoelectronic oscillator loop; The types of the substrate include silicon substrate, indium phosphide substrate and lithium niobate substrate.

6. The integrated optoelectronic oscillator according to claim 5, characterized in that: The integrated optoelectronic oscillator loop also includes: An optical amplifier (7), used for amplifying any one or more optical signals among the first optical carrier, the first branch optical carrier, the second branch optical carrier, the first modulated optical signal, the second modulated optical signal and the third modulated optical signal; At least one section of optical fiber is arranged between any two adjacent components among the electro-optic modulator (3), the high-Q resonator (4), the light combining waveguide (5) and the photodetector (6).

7. The integrated optoelectronic oscillator according to claim 1, characterized in that: Also includes: A feedback module (8) is used to amplify and split the second electrical signal to obtain the first electrical signal and an output electrical signal.

8. The integrated optoelectronic oscillator according to claim 7, characterized in that: The feedback module (8) comprises: An electrical amplifier (81), used for amplifying the second electrical signal; A power divider (82), used for splitting the amplified second electrical signal into the first electrical signal and the output electrical signal; The photodetector (6), the electric amplifier (81), the power divider (82) and the electro-optic modulator (3) are connected via a microwave transmission line to form a circuit, and the circuit includes at least one electric amplifier (81).

9. The integrated optoelectronic oscillator according to claim 7, characterized in that: The feedback module (8) comprises: A power divider (82), used for splitting the second electrical signal into a third electrical signal and the output electrical signal; An electrical amplifier (81) is used to amplify the third electrical signal to obtain the first electrical signal.

10. The integrated optoelectronic oscillator according to claim 8, characterized in that: Also includes: A second optical splitting waveguide (9), used for splitting the third modulated optical signal into multiple fourth modulated optical signals; A combiner (10) for combining electrical signals converted from a plurality of fourth modulated optical signals, and outputting the combined electrical signals to the power divider (82); Each of the fourth modulated optical signals propagates along a plurality of third branches respectively, and each of the third branches comprises the photodetector (6) and at least one of the electrical amplifiers (81).

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