Vibration device
By optimizing the mesa-type structure and length ratio of the vibration element, the problems of vibration characteristics deterioration and Q value reduction caused by metal bumps are solved, and the significant increase in Q value and efficient closure of vibration energy are achieved.
Patent Information
- Application Number
- CN202410758662.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-06-16
- Filing Date
- 2024-06-13
- Publication Date
- 2024-12-17
AI Technical Summary
When the existing vibrating device uses metal bumps as the joint, the hardness is high, resulting in problems such as deterioration of vibration characteristics and lowering of Q value.
By optimizing the table-type structure of the vibration element, the length ratio between the vibration part and the thin-walled part is within the range of 0.01≤h1/t1≤0.156, the metal bumps are used to engage the base to reduce the vibration characteristics of the metal bumps. and the optimal mesa height and thickness ratio were determined through simulation studies to improve Q value.
When using metal bumps with high hardness, the Q value of the vibration element is increased to more than twice, ensuring efficient closure of vibration energy and improving the performance of the vibration device.
Smart Images
Figure CN119154823A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a vibrating device. Background Art
[0002] The following vibration device is well known: the vibration device has a vibration element with a table-type structure, the vibration element with a table-type structure has a vibrating part that vibrates and a thin-walled part that is thinner than the vibration part and integrated with the outer edge of the vibration part. The vibration device confines the vibration energy in the vibration part to improve the Q value.
[0003] For example, Patent Document 1 discloses a vibrator as a vibration device in which the amplitude of bending vibration generated in a vibrating piece having a mesa structure as a vibration element is attenuated by optimizing the size of a bonding material for bonding a base substrate.
[0004] Patent Document 1: Japanese Patent Application Publication No. 2016-152477
[0005] However, when the vibration device described in Patent Document 1 uses metal bumps as bonding materials, the metal bumps have a higher hardness than the conductive adhesive, and thus have a greater influence on the vibration state of the vibration element, resulting in deterioration of vibration characteristics and reduction of Q value. Summary of the invention
[0006] The vibration device comprises: a base; and a vibration element, which includes a vibration part, a thin-walled part thinner than the vibration part, and a supporting part connected to the vibration part via the thin-walled part, and the vibration element is joined to the base at the supporting part by means of a metal bump, and when the thickness of the vibration part is t1 and the length from the surface of the thin-walled part to the surface of the vibration part is h1, 0.01≤h1 / t1≤0.156 is satisfied. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Figure 1 It is a plan view showing a schematic structure of the vibration device according to the first embodiment.
[0008] Figure 2 yes Figure 1 Cross-sectional view at line A1-A1.
[0009] Figure 3 It is a plan view showing a schematic structure of a vibration element included in the vibration device according to the first embodiment.
[0010] Figure 4 yes Figure 3 Cross-sectional view at line A2-A2.
[0011] Figure 5 : is a graph showing the Q value of the vibration element with respect to the length from the surface of the thin-walled portion to the surface of the vibration portion.
[0012] Figure 6 It is a graph showing the Q value of the vibration element with respect to the distance between the support part and the vibration part.
[0013] Figure 7 It is a plan view showing a schematic structure of a vibration device according to a second embodiment.
[0014] Figure 8 yes Figure 7 Cross-sectional view at line B1-B1.
[0015] Fig. 9 It is a plan view showing a schematic structure of a vibration element included in the vibration device according to the second embodiment.
[0016] Fig.10 yes Fig. 9 Cross-sectional view at line B2-B2.
[0017] Fig.11 It is a plan view showing a schematic structure of a vibration device according to a third embodiment.
[0018] Fig.12 yes Fig.11 Cross-sectional view at line C1-C1.
[0019] Fig.13 It is a plan view showing a schematic structure of a vibration element included in the vibration device according to the third embodiment.
[0020] Fig.14 yes Fig.13 Cross-sectional view at line C2-C2.
[0021] Fig.15 It is a plan view showing a schematic structure of a vibration device according to a fourth embodiment.
[0022] Fig.16 yes Fig.15 Cross-sectional view at line DD.
[0023] Description of symbols
[0024] 1, 1a, 1b, 1c: vibration device; 10: base; 11: first surface; 12: second surface; 13: oscillation circuit; 14: internal terminal; 15: external terminal; 16: cover; 17: bonding component; 18: quartz substrate; 19: bonding component; 20: vibration element; 21: substrate; 22: vibration part; 22s: surface; 23: thin-walled part; 23s: surface; 24: supporting part; 25: recessed part; 26: storage space; 27: metal bump; 31: excitation electrode; 32: pad electrode; 33: lead electrode; 34: side electrode; L1, L2: length; h1: length; t1: thickness; S: arrow. DETAILED DESCRIPTION
[0025] 1. First Implementation
[0026] First, refer to Figure 1 to Figure 6 The vibration device 1 according to the first embodiment will be described.
[0027] In addition, for the sake of convenience, in the following figures, the X-axis, Y-axis, and Z-axis are illustrated as three axes perpendicular to each other. In addition, the direction along the X-axis is referred to as the "X direction", the direction along the Y-axis is referred to as the "Y direction", and the direction along the Z-axis is referred to as the "Z direction". In addition, the front end side of the arrow in each axis direction is also referred to as the "positive side", the base end side is referred to as the "negative side", the positive side in the Z direction is referred to as "upper", and the negative side in the Z direction is referred to as "lower".
[0028] like Figure 1 and Figure 2 As shown, the vibration device 1 has: a base 10; a vibration element 20, which is arranged on the first surface 11 of the base 10; a metal bump 27, which connects the vibration element 20 to the base 10; and a cover 16, which covers the vibration element 20 and is connected to the first surface 11 of the base 10.
[0029] The base 10 is a silicon substrate having a first surface 11 and a second surface 12 in a positive and negative relationship. The vibration element 20 is bonded to the first surface 11 by means of a metal bump 27, and the base 10 is provided with two internal terminals 14. In addition, an oscillation circuit 13 electrically connected to the vibration element 20 is provided on the silicon substrate. In addition, in the present embodiment, the oscillation circuit 13 is provided on the side of the first surface 11 of the silicon substrate, i.e., the base 10. In other words, the base 10 is a semiconductor integrated circuit substrate having the first surface 11 as an active surface. The oscillation circuit 13 causes the vibration element 20 to oscillate and generates the frequency of a reference signal such as a clock signal. In addition, the oscillation circuit 13 is electrically connected to the internal terminal 14.
[0030] A plurality of external terminals 15 for outputting the frequency of the reference signal are provided on the second surface 12 of the base 10. The external terminals 15 are electrically connected to the oscillation circuit 13 via wiring or through-electrodes (not shown). In addition, the external terminals 15 may be arranged with the base 10 interposed with an insulating layer (not shown).
[0031] The cover 16 is provided with a recess 25 opened toward the side of the base 10, and is joined to the first surface 11 of the base 10 via the joining member 17, and together with the base 10, forms a storage space 26 for storing the vibration element 20. In addition, the storage space 26 is in a reduced pressure state, preferably a state closer to a vacuum. As a result, the viscous resistance is reduced, and the oscillation characteristics of the vibration element 20 are improved. In addition, as a constituent material of the cover 16, silicon is preferred, and glass, ceramics, etc. may also be used.
[0032] like Figure 3 and Figure 4 As shown in the figure, the vibration element 20 has: a substrate 21 having a vibration part 22, a thin wall part 23 and a support part 24; an excitation electrode 31 provided on the upper and lower surfaces of the vibration part 22; and two pad electrodes 32 provided on the lower surface of the support part 24. In addition, the vibration part 22 performs thickness sliding vibration in the vibration direction indicated by the arrow S. In addition, the vibration element 20 is bonded to the base 10 at the support part 24 by means of a metal bump 27.
[0033] The substrate 21 is a rectangular shape having a long length in the X direction as the vibration direction, and has a vibration portion 22, a thin-walled portion 23 having a thickness thinner than the vibration portion 22, and a support portion 24 having the same thickness as the vibration portion 22. The support portion 24 is connected to the vibration portion 22 via the thin-walled portion 23, and is joined to the base 10 by means of a metal bump 27. In addition, the thin-walled portion 23 is configured to surround the vibration portion 22 when viewed from above, and is recessed from the upper surface and the lower surface of the vibration portion 22 to the same depth. Therefore, the substrate 21 has a double-sided mesa structure. In addition, the constituent material of the substrate 21 is quartz, and an AT-cut quartz substrate is preferably used.
[0034] The excitation electrodes 31 provided on the upper and lower surfaces of the vibration part 22 are formed at positions further inside than the outer shape of the vibration part 22 in a plan view, and the two excitation electrodes 31 are arranged in an overlapping manner. The excitation electrode 31 provided on the upper surface of the vibration part 22 is electrically connected to one pad electrode 32 provided on the lower surface of the support part 24 via a lead electrode 33 extending to the negative side in the X direction and a side electrode 34 provided on the side surface on the negative side in the X direction of the substrate 21. In addition, the excitation electrode 31 provided on the lower surface of the vibration part 22 is electrically connected to another pad electrode 32 provided on the lower surface of the support part 24 via a lead electrode 33 extending to the negative side in the X direction.
[0035] The two pad electrodes 32 of the vibration element 20 are arranged at positions overlapping the two internal terminals 14 provided on the first surface 11 of the base 10, and are mechanically and electrically bonded together via the metal bumps 27. Therefore, the excitation electrodes 31 provided on the upper and lower surfaces of the vibration part 22 are electrically connected to the oscillation circuit 13 provided on the base 10, so that the vibration element 20 can be oscillated.
[0036] The vibration element 20 is formed into a cantilever beam structure in which the support portion 24 disposed at the negative end of the substrate 21 in the X direction is joined to the base 10 by the metal bump 27, and the interval from the metal bump 27 to the vibration portion 22 can be extended, and the influence of the residual stress of the metal bump 27 accompanying the joining on the vibration characteristics can be reduced. Therefore, the longer the interval from the metal bump 27 to the vibration portion 22, the less the influence on the vibration characteristics can be. However, the length of the vibration element 20 in the X direction becomes longer, and miniaturization becomes a problem.
[0037] Therefore, as a method of improving the Q value of the vibration element 20 while miniaturizing the vibration element 20 , the influence of the step between the surface 22 s of the vibration portion 22 serving as the mesa portion and the surface 23 s of the thin-walled portion 23 on the Q value of the vibration element 20 was investigated.
[0038] like Figure 4 As shown, when the thickness of the vibration portion 22 is t1 and the length from the surface 22s of the vibration portion 22 to the surface 23s of the thin-walled portion 23 is h1, Figure 5 The results of simulations of the Q value of the vibration element 20 when the length h1 as the step difference is changed are shown.
[0039] In addition, the vibration element 20 used in the simulation Figure 3 as well as Figure 4 The dimensions of the parts shown are L1 = 700 μm, L2 = 83 μm, L3 = 478 μm, L4 = 90 μm, M1 = 500 μm, M2 = 35.3 μm, t1 = 29.2 μm, and the simulation is performed by changing h1 from 0 μm to 7 μm.
[0040] exist Figure 5 In the figure, the horizontal axis represents h1 / t1 based on the thickness t1 of the vibration part 22, and the vertical axis represents Q / Q0 based on the Q value Q0 of the vibration element 20 when the length h1 is 0 μm, and the results of the simulation of the Q value relative to h1 / t1 are plotted to show an approximate curve. In addition, in this simulation, the case where the length of the step difference on the upper surface, i.e., the length h1, and the length of the step difference on the lower surface are the same value is simulated.
[0041] Figure 5 The approximate curve shown shows that Q / Q0 increases as h1 / t1 increases, and Q / Q0 reaches a maximum value at a value of around 0.07. Thereafter, Q / Q0 shows a tendency to decrease as h1 / t1 increases.
[0042] according to Figure 5 When the relationship between the thickness t1 and the length h1 satisfies 0.01≤h1 / t1≤0.156, the Q value can be increased by more than twice compared with the Q0 value of the vibration element 20 when the length h1 is 0 μm, that is, h1 / t1 is zero.
[0043] In addition, according to Figure 5 When the relationship between the thickness t1 and the length h1 satisfies 0.029≤h1 / t1≤0.12, the Q value can be increased by more than 3.5 times compared with the Q0 value of the vibration element 20 when the length h1 is 0 μm, that is, h1 / t1 is zero.
[0044] In addition, according to Figure 5 When the relationship between the thickness t1 and the length h1 satisfies 0.048≤h1 / t1≤0.095, the Q value can be increased by 4.4 times or more compared with the Q0 value of the vibration element 20 when the length h1 is 0 μm, that is, h1 / t1 is zero.
[0045] Therefore, by making the ratio of the height of the table portion, i.e., the length h1 from the surface 22s of the vibration portion 22 to the surface 23s of the thin-walled portion 23, to the thickness t1 of the vibration portion 22 be within the above-mentioned range, the vibration energy can be efficiently confined within the vibration portion 22 area. Therefore, even when bonding is performed using a metal bump 27 having a hardness higher than that of a conductive adhesive, the Q value of the vibration element 20 can be increased compared to the Q0 value of the vibration element 20 when the length h1 is 0 μm, i.e., h1 / t1 is zero.
[0046] Next, as a method for further improving the Q value of the vibration element 20 while miniaturizing the vibration element 20, the height of the table portion, i.e., the length h1 from the surface 22s of the vibration portion 22 to the surface 23s of the thin-walled portion 23, was kept constant, and the effect of the gap between the support portion 24 and the vibration portion 22 on the Q value of the vibration element 20 was investigated.
[0047] like Figure 3 As shown in FIG. 1 , when the length of the vibration element 20 along the vibration direction of the thickness shear vibration is L1 and the length of the thin-walled portion 23 between the support portion 24 and the vibration portion 22 in the vibration direction is L2, Figure 6 2 shows the result of simulation of the Q value of the vibration element 20 when the length L2 constituting the interval is changed.
[0048] In addition, the vibration element 20 used in the simulation Figure 3 and Figure 4 The dimensions of each part shown are set to L1 = 720 μm, L3 = 453 μm, L4 = 90 μm, M1 = 493 μm, M2 = 31.5 μm, t1 = 28.5 μm, h1 = 2 μm, and L2 is changed from 61 μm to 89 μm for simulation. In addition, since t1 = 28.5 μm and h1 = 2 μm, h1 / t1 becomes 0.07, and the Q value is more than 2.5 times the Q0 value of the vibration element 20 when the length h1 is 0 μm.
[0049] exist Figure 6In the figure, the horizontal axis represents L2 / L1 based on the length L1 of the vibration element 20, and the vertical axis represents Q / Q0 based on the Q value Q0 of the vibration element 20 when the length L2 is 89 μm, that is, L2 / L1 is 0.124, and the results of the simulation of the Q value relative to L2 / L1 are plotted to show an approximate curve. In addition, in this simulation, the case where the step difference on the upper surface, that is, the length h1, and the length of the step difference on the lower surface are the same value is simulated.
[0050] Figure 6 The approximate curve shown in the figure shows that Q / Q0 increases as L2 / L1 decreases from the reference L2 / L1 of 0.124, and Q / Q0 reaches a maximum value at around L2 / L1 of 0.102. Thereafter, Q / Q0 shows a tendency to decrease as L2 / L1 decreases.
[0051] according to Figure 6 When the relationship between the length L1 of the vibration element 20 and the interval between the support portion 24 and the vibration portion 22, i.e., the length L2, satisfies 0.092≤L2 / L1≤0.1109, the Q value can be increased to more than 1.2 times compared with the Q0 value of the vibration element 20 when L2 / L1 is 0.124.
[0052] In addition, according to Figure 6 When the relationship between the length L1 and the length L2 satisfies 0.0935≤L2 / L1≤0.1085, the Q value can be increased by 1.25 times or more compared to the Q0 value of the vibration element 20 when L2 / L1 is 0.124.
[0053] In addition, according to Figure 6 When the relationship between the length L1 and the length L2 satisfies 0.0951≤L2 / L1≤0.1065, the Q value can be increased by 1.3 times or more compared to the Q0 value of the vibration element 20 when L2 / L1 is 0.124.
[0054] Therefore, by making the ratio of the length L1 of the vibration element 20 and the length L2 of the thin-walled portion 23 between the support portion 24 and the vibration portion 22 within the above-mentioned range, the vibration energy can be more efficiently confined within the vibration portion 22 area. Therefore, compared with the Q0 value of the vibration element 20 when L2 / L1 is 0.124, the Q value of the vibration element 20 can be increased.
[0055] As described above, in the vibration device 1 of the present embodiment, the height of the mesa portion, i.e., the length h1 from the surface 22s of the vibration portion 22 to the surface 23s of the thin-walled portion 23, and the thickness t1 of the vibration portion 22 satisfy the relationship of 0.01≤h1 / t1≤0.156, and therefore, the Q value can be increased to more than twice the Q0 value of the vibration element 20 when h1 / t1 is zero. Therefore, compared with the degradation of the Q value caused by bonding the mesa-type vibration element 20 to the base 10 using the metal bump 27 having a higher hardness than the conductive adhesive, the Q value can be improved based on the vibration energy confinement effect, and the vibration device 1 having the vibration element 20 with a high Q value can be obtained.
[0056] Furthermore, since the relationship between the length h1 and the thickness t1 satisfies 0.029≤h1 / t1≤0.12, the Q value can be increased by 3.5 times or more compared to the Q0 value of the vibration element 20 when h1 / t1 is zero.
[0057] Furthermore, since the relationship between the length h1 and the thickness t1 satisfies 0.048≤h1 / t1≤0.095, the Q value can be increased by 4.4 times or more compared to the Q0 value of the vibration element 20 when h1 / t1 is zero.
[0058] 2. Second Implementation
[0059] Next, refer to Figure 7 to Figure 10 A resonator device 1 a according to the second embodiment will be described.
[0060] The resonator device 1a of this embodiment is the same as the resonator device 1 of the first embodiment except that the structure of the resonator element 20a is different from that of the first embodiment. The description will focus on the differences from the first embodiment, and the description of the same matters will be omitted.
[0061] like Figure 7 and Figure 8 As shown, the vibration device 1a has: a base 10; a vibration element 20a, which is arranged on the first surface 11 of the base 10; a metal bump 27, which connects the vibration element 20a to the base 10; and a cover 16, which covers the vibration element 20a and is connected to the first surface 11 of the base 10.
[0062] like Fig. 9 and Fig.10 As shown, the substrate 21a of the vibration element 20a is a rectangular shape having a longer length in the X direction as the vibration direction, and has a vibration portion 22a, a thin-walled portion 23a thinner than the vibration portion 22a, and a support portion 24a thicker than the thin-walled portion 23a. The support portion 24a is connected to the vibration portion 22a via the thin-walled portion 23a.
[0063] The thin wall portion 23a of the vibration element 20a is arranged to surround the vibration portion 22a in a plan view and to be recessed from the lower surface of the vibration portion 22a. Therefore, the substrate 21a has a single-sided mesa structure having a flat upper surface and a mesa portion on the lower surface.
[0064] The vibration element 20a of the vibration device 1a of this embodiment is a single-sided table-type structure, but by making the ratio of the height of the table portion, i.e., the length h1 from the surface 22s of the vibration portion 22a to the surface 23s of the thin-walled portion 23, to the thickness t1 of the vibration portion 22a be within a specified range, it is possible to obtain the same effect as the first embodiment.
[0065] 3. Third Implementation
[0066] Next, refer to Figure 11 to Figure 14 A resonator device 1 b according to the third embodiment will be described.
[0067] The resonator device 1b of this embodiment is the same as the resonator device 1 of the first embodiment except that the structure of the resonator element 20b is different from that of the resonator device 1 of the first embodiment. The description will focus on the differences from the first embodiment, and the description of the same matters will be omitted.
[0068] like Fig.11 and Fig.12 As shown, the vibration device 1b has: a base 10; a vibration element 20b, which is arranged on the first surface 11 of the base 10; a metal bump 27, which connects the vibration element 20b to the base 10; and a cover 16, which covers the vibration element 20b and is connected to the first surface 11 of the base 10.
[0069] like Fig.13 and Fig.14 As shown, the substrate 21b of the vibration element 20b is a rectangular shape having a longer length in the X direction as the vibration direction, and has a vibration portion 22, a thin-walled portion 23 thinner than the vibration portion 22, and a support portion 24b having the same thickness as the thin-walled portion 23. In addition, the support portion 24b is connected to the vibration portion 22 via the thin-walled portion 23.
[0070] The thickness of the supporting portion 24b of the vibration element 20b of the vibration device 1b of this embodiment is the same as the thickness of the thin-walled portion 23, but by making the ratio of the height of the table portion, i.e., the length h1 from the surface 22s of the vibration portion 22 to the surface 23s of the thin-walled portion 23, to the thickness t1 of the vibration portion 22 be within a specified range, the same effect as that of the first embodiment can be obtained.
[0071] 4. Fourth Implementation
[0072] Next, refer to Fig.15 and Fig.16A resonator device 1 c according to a fourth embodiment will be described.
[0073] The resonator device 1c of this embodiment is the same as the resonator device 1 of the first embodiment except that a quartz substrate 18 is arranged between the metal bump 27 and the base 10. The description will focus on the differences from the first embodiment, and the description of the same matters will be omitted.
[0074] like Fig.15 and Fig.16 As shown, the vibration device 1c includes: a base 10; a vibration element 20 disposed on the first surface 11 of the base 10; a metal bump 27 that joins the vibration element 20 to the base 10; a quartz substrate 18 disposed between the metal bump 27 and the base 10; and a cover 16 that covers the vibration element 20 and joins to the first surface 11 of the base 10. In addition, the vibration element 20 is a quartz vibration element.
[0075] The vibration device 1c has a quartz substrate 18 disposed between the metal bump 27 and the base 10. The quartz substrate 18 is bonded to the base 10 via a bonding member 19. Therefore, compared with a case where the vibration element 20 is directly bonded to the base 10 via the metal bump 27, stress generated by the difference in linear expansion coefficient between the base 10 and the vibration element 20 can be reduced. In addition, it is preferable that the crystal direction of the quartz substrate 18 is the same as that of the vibration element 20. By making the crystal directions the same, stress generated by the difference in linear expansion coefficient between the base 10 and the vibration element 20 can be further reduced.
[0076] The vibration device 1c of this embodiment has a quartz substrate 18 arranged between the metal bump 27 and the base 10, so that the stress generated by the difference in linear expansion coefficient between the base 10 and the vibration element 20 can be reduced. By making the ratio of the height of the table portion, that is, the length h1 from the surface 22s of the vibration portion 22 to the surface 23s of the thin-walled portion 23, to the thickness t1 of the vibration portion 22 within a specified range, the same effect as the first embodiment can be obtained.
[0077] 5. Modifications
[0078] In addition, the present invention is not limited to the above-mentioned embodiment, and various modifications can be implemented within the scope of the gist of the present invention.
[0079] In the first to fourth embodiments described above, the oscillation circuit 13 is formed on the first surface 11 side of the base 10, but the oscillation circuit 13 may be formed on the second surface 12 side of the base 10. In this case, a through electrode may be formed on the base 10, the through electrode penetrating from the first surface 11 to the second surface 12 of the base 10 to electrically connect the vibration element 20 and the oscillation circuit 13.
Claims
1. A vibration device, comprising: a base; and A vibration element, comprising a vibration part, a thin-walled part thinner than the vibration part, and a support part connected to the vibration part via the thin-walled part, wherein the vibration element is joined to the base at the support part by means of a metal bump, When the thickness of the vibration portion is t1 and the length from the surface of the thin-walled portion to the surface of the vibration portion is h1, 0.01≤h1 / t1≤0.156 is satisfied.
2. The vibration device according to claim 1, wherein The h1 and the t1 satisfy 0.029≤h1 / t1≤0.
12.
3. The vibration device according to claim 1, wherein The h1 and the t1 satisfy 0.048≤h1 / t1≤0.
095.
4. The vibration device according to claim 1, wherein The thickness of the support portion is the same as the thickness of the vibration portion.
5. The vibration device according to claim 1, wherein The vibrating portion performs thickness shear vibration, When the length of the vibration element along the vibration direction of the thickness shear vibration is L1 and the length of the thin-walled portion between the support portion and the vibration portion in the vibration direction is L2, Satisfies 0.092≤L2 / L1≤0.1109.
6. The vibration device according to claim 5, wherein: The L1 and the L2 satisfy 0.0935≤L2 / L1≤0.1085.
7. The vibration device according to claim 5, wherein: The L1 and the L2 satisfy 0.0951≤L2 / L1≤0.1065.
8. The vibration device according to any one of claims 1 to 7, wherein: The base includes a silicon substrate.
9. The vibration device according to claim 8, wherein: The vibration device further includes a cover body, the cover body is bonded to the silicon substrate, and the vibration element is accommodated between the cover body and the silicon substrate. The silicon substrate includes a first surface and a second surface opposite to the first surface. The vibration element is bonded to the first surface via the metal bump. An oscillation circuit electrically connected to the vibration element is formed on the silicon substrate.
10. The vibration device according to claim 1 or 5, wherein: The vibration element is a quartz vibration element, A quartz substrate is provided between the metal bump and the base.