Cooling plate and component for semiconductor manufacturing apparatus

Abstract

The cooling plate according to the present invention contains 42 to 65 mass% of TiSi2, 4 to 16 mass% of TiC, and SiC less than the mass% of TiSi2.

Description

Technical Field The present invention relates to a cooling plate and a component for a semiconductor manufacturing device. Background Art The electrostatic chuck that is heated in the semiconductor process is connected to a cooling plate to dissipate heat. In this case, alumina is sometimes used as the material of the electrostatic chuck, and a composite material is sometimes used as the material of the cooling plate. As the composite material, for example, as disclosed in Patent Document 1, a composite material containing silicon carbide, titanium silicide, titanium carbide silicon, and titanium carbide is known. This composite material has excellent material properties. Prior art literature Patent Literature Patent Document 1: Japanese Patent No. 5666748 Summary of the invention However, pits (small holes) may be formed on the surface of the cooling plate using the composite material of Patent Document 1. The presence of such pits may easily cause damage from the pits or cause temperature unevenness in the surface, thereby reducing the thermal uniformity in the surface, which is not ideal. The present invention has been made to solve the above-mentioned problems, and a main object of the present invention is to provide a cooling plate having excellent material properties and having fewer pits on the surface.

[0001] The cooling plate of the present invention contains 42 to 65 mass % of TiSi2 and 4 to 16 mass % of TiC, and contains SiC in an amount less than the mass % of TiSi2. The cooling plate has excellent material properties, and therefore has a high cooling capacity for the object to be cooled. In addition, the surface of the cooling plate has fewer pits, and therefore, damage starting from the pits can be suppressed, and temperature unevenness due to reduced heat conduction at the location where the pits exist can be suppressed. In addition, "a to b" which shows a numerical range means: a or more and b or less.

[0002] The cooling plate of the present invention (the cooling plate described in [1] above) preferably has a width of 30000 mm. 2 The above surface, after the surface is subjected to a penetrant flaw detection test using a fluorescent liquid, when the surface is observed, there are less than one hole with a major diameter of 0.5 mm or more into which the fluorescent liquid has penetrated. Here, the hole is defined as an etch pit. The number of etch pits in the cooling plate is extremely small, so damage starting from the etch pits and temperature unevenness caused by the etch pits can be further suppressed.

[0003] The cooling plate of the present invention (the cooling plate described in [1] or [2]) preferably contains 0.1 to 0.5 mass % of SiO 2 . This can make the four-point bending strength, which is one of the material properties, relatively high.

[0004] The cooling plate of the present invention (the cooling plate described in any one of [1] to [3] above) preferably has a SiC / TiSi2 mass ratio of 0.47 to 0.98 and a SiC / TiC mass ratio of 2.7 to 8.8.

[0005] The cooling plate of the present invention (the cooling plate described in any one of [1] to [4]) can be used for cooling an alumina substrate, and the difference in average linear thermal expansion coefficient between the cooling plate and alumina at 40°C to 570°C can be 0.5 ppm / K or less, or the average linear thermal expansion coefficient at 40°C to 570°C can be 7.2 to 9.0 ppm / K. Accordingly, when the cooling plate and the alumina substrate as a cooling object are bonded to produce a bonded body, since the difference in thermal expansion between the cooling plate and the alumina substrate is small, even if the bonded body is repeatedly used between low and high temperatures, the separation of the cooling plate and the alumina substrate can be suppressed. It should be noted that in the cooling plate of the present invention (the cooling plate described in any one of [1] to [5] above), the opening ratio is preferably 1% or less, more preferably 0.1% or less. The bulk density is preferably 3.70 g / cm 3 More preferably, 3.74 g / cm 3 The thermal conductivity is preferably 75 W / mK or more, and more preferably 80 W / mK or more. The four-point bending strength is preferably 250 MPa or more, and more preferably 290 MPa or more. The SiC content is preferably 30 to 44% by mass.

[0006] The semiconductor manufacturing device component of the present invention comprises: an alumina substrate having an electrode built therein; a cooling plate of the present invention (the cooling plate described in [5] above); and a metal bonding layer that bonds the alumina substrate and the cooling plate. In the semiconductor manufacturing device component, the difference in thermal expansion between the cooling plate and the alumina substrate is small, so that even if the cooling plate and the alumina substrate are repeatedly used between low and high temperatures, the cooling plate and the alumina substrate can be prevented from peeling off. Therefore, the service life period is extended. In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in [6] above), the metal bonding layer is preferably formed of an aluminum alloy containing Mg or containing Si and Mg. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 It is a top view of the component 10 for semiconductor manufacturing equipment. Figure 2 yes Figure 1 AA cross-section diagram. Figure 3 It is a manufacturing process diagram of the component 10 for semiconductor manufacturing equipment. Figure 4It is a manufacturing process diagram of the component 10 for semiconductor manufacturing equipment. Figure 5 It is an explanatory diagram of the second substrate 32 . Figure 6 It is a cross-sectional view of a component 110 for a semiconductor manufacturing apparatus. Figure 7 This is a manufacturing process diagram of a component 110 for a semiconductor manufacturing apparatus. Figure 8 It is an explanatory diagram of the second substrate 132 . Fig. 9 It is a cross-sectional view of a component 210 for a semiconductor manufacturing apparatus. Fig.10 It is a rear view (P view) of the semiconductor manufacturing apparatus component 210 . DETAILED DESCRIPTION [Component for semiconductor manufacturing apparatus - first embodiment] Hereinafter, a semiconductor manufacturing apparatus component 10 according to the first embodiment will be described. Figure 1 is a top view of a component 10 for a semiconductor manufacturing apparatus, Figure 2 yes Figure 1 AA cross-section diagram. The component 10 for semiconductor manufacturing equipment comprises: an electrostatic chuck 20 made of aluminum oxide, which can adsorb a silicon wafer W to be subjected to plasma treatment; a cooling plate stack 30, which cools the electrostatic chuck 20; and a stack-chuck bonding layer 40, which bonds the electrostatic chuck 20 and the cooling plate stack 30. The electrostatic chuck 20 is a disk-shaped alumina plate having an outer diameter smaller than that of the wafer W, and has an electrostatic electrode 22 and a heater electrode 24 built therein. The electrostatic electrode 22 is a planar electrode to which a DC voltage can be applied by an external power source (not shown) via a rod-shaped power supply terminal 23. When a DC voltage is applied to the electrostatic electrode 22, the wafer W is adsorbed and fixed to the wafer loading surface 20a by Coulomb force; when the application of the DC voltage is released, the adsorption and fixation of the wafer W on the wafer loading surface 20a is released. The heater electrode 24 is patterned in a manner such as by a single stroke on the entire surface of the electrostatic chuck 20, and when a voltage is applied, it generates heat to heat the wafer W. Voltage can be applied to the heater electrode 24 by means of a rod-shaped power supply terminal 25 that reaches one end and the other end of the heater electrode 24 from the back side of the cooling plate stack 30, respectively. The cooling plate stack 30 is a disc-shaped stack having an outer diameter that is the same as or slightly larger than that of the electrostatic chuck 20, and includes: a first substrate 31; a second substrate 32; a third substrate 33; a first metal bonding layer 34 formed between the first substrate 31 and the second substrate 32; a second metal bonding layer 35 formed between the second substrate 32 and the third substrate 33; and a refrigerant passage 36 through which the refrigerant can flow. A punching portion 32a is formed in the second substrate 32. The punching portion 32a is obtained by punching from one surface to the other surface of the second substrate 32 in the same shape as the refrigerant passage 36. The first metal bonding layer 34 and the second metal bonding layer 35 are formed by sandwiching a metal bonding material (for example, an Al-Si-Mg-based or Al-Mg-based metal bonding material) between the first substrate 31 and one surface of the second substrate 32, and between the other surface of the second substrate 32 and the third substrate 33, and performing thermal compression bonding on each substrate 31 to 33. The cooling plate stack 30 is provided with a coolant supply hole 46a and a coolant discharge hole 46b, which extend from the surface opposite to the surface joined to the electrostatic chuck 20 in a direction perpendicular to the wafer placement surface 20a and are respectively connected to the inlet 36a and the outlet 36b of the coolant passage 36. In addition, the cooling plate stack 30 is provided with terminal insertion holes 43 and 45, which penetrate the surface joined to the electrostatic chuck 20 and the surface opposite thereto. The terminal insertion hole 43 is a hole through which the power supply terminal 23 of the electrostatic electrode 22 is inserted, and the terminal insertion hole 45 is a hole through which the power supply terminal 25 of the heater electrode 24 is inserted. The cooling plate made of the composite material used for the first to third substrates 31 to 33 contains 42 to 65 mass % (preferably 42 to 53 mass %) of TiSi2, 4 to 16 mass % (preferably 8 to 15 mass %) of TiC, and contains SiC less than the mass % of TiSi2. The content is a value obtained by obtaining the X-ray diffraction pattern of the composite material, i.e., the cooling plate, and using a simple quantitative method using data analysis software. The cooling plate has excellent material properties and very few pits appear on the surface. In this specification, "pit" is defined as: a 30,000 mm 2 Above (for example When the surface above is subjected to a penetrant flaw detection test using fluorescent liquid, the fluorescent liquid penetrates into holes with a long diameter of 0.5 mm or more. The stack-chuck bonding layer 40 is formed by sandwiching a metal bonding material (e.g., an Al-Si-Mg-based or Al-Mg-based metal bonding material) between the first substrate 31 of the cooling plate stack 30 and the electrostatic chuck 20 and bonding the two by thermal compression. It should be noted that each power supply terminal 23, 25 is configured not to be in direct contact with the cooling plate stack 30, the first metal bonding layer 34 and the second metal bonding layer 35, and the stack-chuck bonding layer 40. It should be noted that in the component 10 for semiconductor manufacturing equipment, a gas supply hole for supplying He gas to the back side of the chip W and a lifting pin insertion hole for inserting a lifting pin for lifting the chip W from the chip loading surface 20a can be arranged to penetrate the component 10 for semiconductor manufacturing equipment in a direction orthogonal to the chip loading surface 20a. Next, an example of using the component 10 for a semiconductor manufacturing apparatus is described. First, with the component 10 for a semiconductor manufacturing apparatus placed in a vacuum chamber (not shown), a wafer W is placed on the wafer placement surface 20a. Then, the vacuum chamber is depressurized by a vacuum pump and adjusted to a predetermined vacuum degree, and a DC voltage is applied to the electrostatic electrode 22 to generate a Coulomb force, thereby adsorbing and fixing the wafer W on the wafer placement surface 20a. Next, a reaction gas atmosphere of a predetermined pressure (e.g., tens to hundreds of Pa) is set in the vacuum chamber, and plasma is generated in this state. Then, the surface of the wafer W is etched using the generated plasma. A controller (not shown) controls the power supplied to the heater electrode 24 so that the temperature of the wafer W reaches a preset target temperature. Next, a manufacturing example of the semiconductor manufacturing apparatus component 10 will be described. Figure 3 and Figure 4 It is a manufacturing process diagram of the component 10 for semiconductor manufacturing equipment. Figure 5 1 and 10 are explanatory diagrams of the second substrate 32 , wherein (a) is a plan view and (b) is a BB cross-sectional view of (a). First, the first to third substrates 31 to 33 (see FIG. 3 ) which are disk-shaped thin plates (cooling plates) are prepared. Figure 3 (a)). Next, a hole 32a is formed in the second substrate 32 by punching from one surface to the other surface in the same shape as the coolant passage 36 (see Figure 3 (b) and Figure 5 The punching portion 32a can be formed by a machining center, water jet, electric discharge machining, etc. Next, the metal bonding material 51 is sandwiched between the first substrate 31 and one surface of the second substrate 32, and the metal bonding material 52 is sandwiched between the other surface of the second substrate 32 and the third substrate 33 (refer to Figure 3 (c)), the first to third substrates 31 to 32 are thermally pressed together (see Figure 3 (d)). Accordingly, the punching portion 32a becomes a coolant passage 36, a first metal bonding layer 34 is formed between the first substrate 31 and the second substrate 32, and a second metal bonding layer 35 is formed between the second substrate 32 and the third substrate 33, and the cooling plate stack 30 is completed. At this time, as the metal bonding materials 51 and 52, it is preferred to use Al-Si-Mg or Al-Mg bonding materials. In a state heated to below the solidus temperature in a vacuum atmosphere, each substrate is heated at 0.5 to 2.0 kg / mm2 The heat compression bonding (TCB) using these bonding materials is performed by applying a pressure of 1 to 5 hours. Then, a coolant supply hole 46a is formed from the back side of the cooling plate stack 30 to the inlet 36a of the coolant passage 36, a coolant discharge hole 46b is formed from the back side of the cooling plate stack 30 to the outlet 36b of the coolant passage 36, and terminal insertion holes 43 and 45 are formed that penetrate the surface and back of the cooling plate stack 30 (see Figure 3 (e) Figure 3 (e) does not show the inlet 36a, outlet 36b, refrigerant supply hole 46a, and refrigerant discharge hole 46b of the refrigerant passage 36. Figure 1 ). On the other hand, an electrostatic chuck 20 is prepared in which an electrostatic electrode 22 and a heater electrode 24 are implanted and power supply terminals 23 and 25 are installed (see Figure 4 (a)). For example, the electrostatic chuck 20 can be prepared according to the description of Japanese Patent Publication No. 2006-196864. Then, the metal bonding material 28 is sandwiched between the surface of the electrostatic chuck 20 opposite to the wafer placement surface 20a and the surface of the first substrate 31 of the cooling plate stack 30, and the power supply terminals 23 and 25 are inserted into the terminal insertion holes 43 and 45 respectively, and the electrostatic chuck 20 and the cooling plate stack 30 are thermally pressed and bonded (see Figure 4 (a)). Thus, the stack-chuck bonding layer 40 is formed between the electrostatic chuck 20 and the cooling plate stack 30, and the semiconductor manufacturing device component 10 is completed (see Figure 4 (b) As the metal bonding material 28, it is preferable to use an Al-Si-Mg or Al-Mg bonding material for TCB as described above. The cooling plate for the first to third substrates 31 to 33 of the first embodiment described in detail above has excellent material properties, and therefore has a high ability to cool the object to be cooled. In addition, there are fewer pits on the surface of the cooling plate, so it is possible to suppress damage starting from the pits, and it is possible to suppress the occurrence of temperature unevenness due to reduced heat conduction at the location where the pits exist. The cooling plate preferably contains 0.1 to 0.5 mass % SiO2. This allows the four-point bending strength, which is one of the material properties, to be relatively high. In addition, the SiC / TiSi2 mass ratio is preferably 0.47 to 0.98. The SiC / TiC mass ratio is preferably 2.7 to 8.8. The SiC content is preferably 30 to 44 mass %. The cooling plate is preferably such that the difference in average linear thermal expansion coefficient between the cooling plate and alumina at 40°C to 570°C is less than 0.5 ppm / K, or the average linear thermal expansion coefficient at 40°C to 570°C is 7.2 to 9.0 ppm / K. Accordingly, since the difference in thermal expansion between the alumina substrate and the cooling plate is small, the bonding body obtained by bonding the alumina substrate as the electrostatic chuck 20 and the cooling plate as the first substrate 31 can suppress the separation of the cooling plate and the alumina substrate even if the bonding body is repeatedly used between low and high temperatures. Therefore, the service life of the semiconductor manufacturing device component 10 is prolonged. In the cooling plate, the opening ratio is preferably 1% or less, more preferably 0.1% or less, and the bulk density is preferably 3.70 g / cm 3 More preferably, 3.74 g / cm 3 or more. Accordingly, the density is high enough, so the liquid tightness and air tightness are excellent. The thermal conductivity is preferably 75W / mK or more, more preferably 80W / mK or more. Accordingly, heat can be efficiently taken away from the electrostatic chuck 20 as the cooling object. The 4-point bending strength is preferably 250MPa or more, more preferably 290MPa or more. Accordingly, it can withstand the processing and joining when manufacturing the component 10 for semiconductor manufacturing equipment, and can also fully withstand the stress caused by temperature changes during use. It should be noted that the cooling plate may contain 9 to 16 mass% of C element, 0.1 to 0.5 mass% of Si3N4, and 0.1 to 0.5 mass% of TiN. [Component for semiconductor manufacturing apparatus - Second embodiment] Hereinafter, a semiconductor manufacturing apparatus component 110 according to a second embodiment will be described. Figure 6 It is a cross-sectional view of a component 110 for a semiconductor manufacturing apparatus. The component 110 for semiconductor manufacturing equipment comprises: an electrostatic chuck 20 made of aluminum oxide, which can adsorb a silicon wafer W to be subjected to plasma treatment; a cooling plate stack 130, which cools the electrostatic chuck 20; and a stack-chuck bonding layer 40, which bonds the cooling plate stack 130 and the electrostatic chuck 20. The electrostatic chuck 20 is the same as the first embodiment, so the same symbols as the first embodiment are marked and the description is omitted. The cooling plate stack 130 is a disc-shaped stack having an outer diameter that is the same as or slightly larger than that of the electrostatic chuck 20, and includes: a first substrate 131; a second substrate 132; a metal bonding layer 134 formed between the first substrate 131 and the second substrate 132; and a refrigerant passage 136 in which the refrigerant can flow. The composite material cooling plate used for the first substrate 131 and the second substrate 132 is basically the same as the cooling plate used in the first embodiment. The second substrate 132 has a groove 132a that becomes the refrigerant passage 136 on the surface opposite to the first substrate 131. The metal bonding layer 134 is formed by sandwiching a metal bonding material (for example, a metal bonding material of the Al-Si-Mg system or the Al-Mg system) between the surfaces of the first substrate 131 and the second substrate 132 provided with the groove 132a and hot-pressing the two substrates 131 and 132. The cooling plate stack 130 is formed with a coolant supply hole and a coolant discharge hole connected to the inlet and outlet of the coolant passage 136, respectively, as in the first embodiment, but they are omitted in the illustration. In addition, the cooling plate stack 130 is formed with terminal insertion holes 43 and 45 as in the first embodiment. The stack-chuck joint layer 40 is the same as in the first embodiment, and therefore, the description thereof is omitted. The usage example of the semiconductor manufacturing apparatus component 110 is substantially the same as that of the first embodiment, and therefore the description thereof will be omitted. Next, a manufacturing example of the semiconductor manufacturing apparatus component 110 will be described. Figure 7 is a manufacturing process diagram of a semiconductor manufacturing device component 110, Figure 8 First, a disc-shaped thin plate (cooling plate), namely the first substrate 131 and the second substrate 132 (see FIG. Figure 7 (a)) Next, a groove 132a serving as the coolant passage 36 is formed on the surface of the second substrate 132 that faces the first substrate 131 (see Figure 7 (b) and Figure 8 The groove 132a can be formed by a machining center, water jet, electric discharge machining, etc. Next, the metal bonding material 61 is sandwiched between the first substrate 131 and the surface of the second substrate 132 where the groove 132a is formed (see Figure 7 (c)), the first substrate 131 and the second substrate 132 are thermally pressed together (see Figure 7(d)). Accordingly, the groove 132a becomes the coolant passage 136, a metal bonding layer 134 is formed between the first substrate 131 and the second substrate 132, and the cooling plate stack 130 is completed. At this time, as the metal bonding material 61, as described above, it is preferred to use an Al-Si-Mg system or an Al-Mg system bonding material for TCB. The subsequent process, that is, the bonding process of the electrostatic chuck 20 and the cooling plate stack 130 is the same as the first embodiment, and therefore, its description is omitted. The cooling plates used for the first and second substrates 131 and 132 of the second embodiment described in detail above are the same as the cooling plates used in the first embodiment, and therefore, the same effects as those of the first embodiment can be obtained. [Component for semiconductor manufacturing apparatus - third embodiment] Hereinafter, a semiconductor manufacturing apparatus component 210 according to a third embodiment will be described. Fig. 9 is a cross-sectional view of a semiconductor manufacturing device component 210, Fig.10 It is a rear view (P view) of the component 210 for semiconductor manufacturing equipment. The semiconductor manufacturing equipment component 210 includes: an electrostatic chuck 20 made of aluminum oxide, which can adsorb a silicon wafer W to be subjected to plasma treatment; a cooling plate 230, which cools the electrostatic chuck 20; and a cooling plate-chuck bonding layer 240, which bonds the cooling plate 230 and the electrostatic chuck 20. The electrostatic chuck 20 is the same as that of the first embodiment, and therefore, the same reference numerals as those of the first embodiment are used and the description thereof is omitted. The cooling plate 230 is a single-layer plate in the shape of a disk having an outer diameter that is the same as or slightly larger than that of the electrostatic chuck 20, and is basically the same as the cooling plate used in the first embodiment. The cooling plate 230 has a coolant passage groove 230a on the surface facing the setting plate 90 on the vacuum chamber side. The shape of the coolant passage groove 230a is the same as that of the first embodiment. Figure 8 The same groove 132a is formed in the cooling plate 230. In addition, the terminal insertion holes 43 and 45 are formed in the same manner as in the first embodiment. The cooling plate-chuck bonding layer 240 is the same as the laminated body-chuck bonding layer 40 of the first embodiment, and therefore, the description thereof is omitted. The outer peripheral sealing member 232 is a ring made of resin or metal that can be elastically deformed and is arranged along the outer peripheral edge of the lower surface of the cooling plate 230 (see Fig.10 The refrigerant passage sealing member 234 is a member made of resin or metal that can be elastically deformed, and is arranged to surround the refrigerant passage groove 230a (see Fig.10 The outer peripheral sealing member 232 and the coolant passage sealing member 234 are arranged between the upper surface of the setting plate 90 and the lower surface of the semiconductor manufacturing apparatus member 210 (the lower surface of the cooling plate 230 ). The semiconductor manufacturing device component 210 is mounted on the setting plate 90 using a clamping member 70. The clamping member 70 is an annular member with a cross section that is roughly inverted L-shaped. When the inner peripheral step surface is clamped on the outer peripheral upper surface of the cooling plate 230, the bolt 72 is inserted from the upper surface of the clamping member 70 and screwed into the screw hole 92 of the setting plate 90. The bolt 72 is installed at multiple locations (e.g., 8 locations, 12 locations) that are arranged at equal intervals along the circumferential direction of the clamping member 70. By screwing the bolt 72 into the screw hole 92 in this way, the outer peripheral sealing member 232 and the coolant passage sealing member 234 are squeezed in the up and down directions to exert sealing properties. Accordingly, the lower opening of the coolant passage groove 230a is blocked by the setting plate 90 to form the coolant passage 232. It should be noted that the setting plate 90 is formed with a coolant supply hole and a coolant discharge hole that are respectively connected to the inlet and outlet of the coolant passage 232, but the illustration of these elements is omitted. The use example of the semiconductor manufacturing apparatus component 210 is substantially the same as that of the first embodiment, and therefore, description thereof is omitted. In the manufacturing example of the semiconductor manufacturing apparatus component 210, the second substrate 132 of the second embodiment can be used as the cooling plate 230, and therefore, description thereof is omitted. The cooling plate 230 of the third embodiment described in detail above is the same as the cooling plate used in the first embodiment, and therefore, the same effects as those of the first embodiment can be obtained. It should be noted that the present invention is not limited to the above-described embodiment, and can be implemented in various forms as long as it falls within the technical scope of the present invention. For example, the cooling plate of the present invention is not limited to the structures of the first to third substrates 31 to 33 of the first embodiment, the first substrate 131 and the second substrate 132 of the second embodiment, and the cooling plate 230 of the third embodiment, and may be any structure. The first substrate 31 and the third substrate 33, and the first substrate 131 are examples of structures without coolant passage grooves, and the second substrates 32, 132, and the cooling plate 230 are examples of structures with coolant passage grooves. The cooling plate of the present invention may have a coolant passage groove (or a coolant passage), or may not have a coolant passage groove (or a coolant passage). The shape of the coolant passage 36, 136, 236 is also not limited to the shape of the above-mentioned embodiments. In addition, the cooling plate stack 30 of the first embodiment is set as a three-layer structure, the cooling plate stack 130 of the second embodiment is set as a two-layer structure, and the cooling plate 230 of the third embodiment is set as a one-layer structure, but the number of layers is not particularly limited thereto. Alternatively, a cooling plate stack 30, 130, or cooling plate 230 without cooling passages may be used. In this case, a substrate made of another material (eg, Al) may be disposed underneath the cooling plate stack, and a coolant passage or coolant passage groove may be provided on the substrate. Example Hereinafter, preferred embodiments of the cooling plate will be described. 1. Manufacturing sequence ·reconcile The raw material components were weighed according to the mass % shown in Table 1, and isopropyl alcohol was used as a solvent, and a nylon can and a nylon ball with a diameter of 10 mm were used for wet mixing for 4 hours. After mixing, the slurry was taken out and dried at 110°C in a nitrogen stream. After that, it was passed through a 30-mesh sieve to make a blended powder. In addition, it was confirmed that the weighed raw material of about 500g was put into a high-speed flow mixer (capacity of the powder input part 1.8L) and mixed at a speed of 1500rpm of the stirring blade, and the same material properties as wet mixing were obtained. ·forming The blended powder is heated at 200 kgf / cm 2 The disc-shaped molded body is uniaxially pressed under a pressure of 1000 to produce a disc-shaped molded body, which is then placed in a graphite mold for firing. ·Firing The disk-shaped molded body was hot-pressed to obtain a dense cooling plate. During the hot-pressing, the pressing pressure was set to 200 kgf / cm 2 The sintering was performed at the sintering temperature (maximum temperature) shown in Table 1, and the sintering was performed in a vacuum atmosphere until the sintering was completed. The holding time at the sintering temperature was set to 4 hours. The obtained cooling plate had a diameter of 400 mm and a thickness of 25 mm. 2. Experimental Examples Table 1 shows a: the composition of the starting raw materials of each experimental example (mass %), b: the hot pressing sintering temperature, c: the constituent phases of the cooling plate obtained from the XRD measurement results and their content (mass %), d: two mass ratios in the cooling plate (SiC / TiSi2 and SiC / TiC), e: the material properties of the cooling plate (open porosity, bulk density, four-point bending strength, linear thermal expansion coefficient, thermal conductivity), and f: the product properties of the cooling plate (number of pits). It should be noted that among Experimental Examples 1 to 24, Experimental Examples 1 to 16 correspond to the embodiments of the present invention, and the rest correspond to Comparative Examples. Table 1 3. Simple quantification of constituent phases The cooling plate was crushed in a mortar, and the crystalline phase was identified using an X-ray diffractometer. The measurement conditions were: CuKα, 40kV, 40mA, 2θ=5~70°, and a sealed tube X-ray diffractometer (D8 ADVANCE manufactured by Bruker AXS) was used. In addition, a simple quantitative analysis of the constituent phases was performed. For this simple quantitative analysis, the content of the crystalline phase contained in the cooling plate was determined based on the peak of the X-ray diffraction. Here, SiC, TiSi2, TSC (Ti3SiC2), TiC and SiO2 were divided into simple quantitative analysis to determine the content. Simple quantitative analysis utilizes the simple contour fitting function (FPMEval.) of the powder diffraction data analysis software "EVA" of Bruker AXS. In this function, the amount ratio of the constituent phase is calculated using the I / Icor (intensity ratio relative to the diffraction intensity of corundum) of the ICDD PDF Card of the identified crystalline phase. The PDF Card numbers of each crystalline phase are SiC: 00-049-1428, TiSi2: 01-071-0187, TSC: 01-070-6397, TiC: 01-070-9258 (TiC0.62), and SiO2: 00-039-1425. 4. Determination of material properties (1) Open porosity and bulk density The measurement was performed using the Archimedean method with pure water as the medium. (2) 4-point bending strength Solved in accordance with JIS-R1601. (3) Linear thermal expansion coefficient (average linear thermal expansion coefficient of 40 to 570°C) The temperature was raised to 650°C twice at a heating rate of 20°C / min in an argon atmosphere using TD5020S (lateral differential expansion measurement method) manufactured by Bruker AXS Co., Ltd. The average linear thermal expansion coefficient of 40 to 570°C was calculated based on the second measurement data. The standard sample used was an alumina standard sample (purity 99.7%, bulk density 3.9 g / cm 3 , length 20 mm). Another alumina standard sample was prepared and the linear thermal expansion coefficient was measured under the same conditions, and the value obtained was 7.7 ppm / K. (4) Thermal conductivity The measurement was carried out using the laser flash method. 5. Determination of product characteristics (number of pits) The surface of the cooling plate with a diameter of 400 mm (30000 mm 2 The above) penetrant flaw detection test using fluorescent liquid was carried out, ultraviolet light was irradiated, and the number of holes (pits) with a long diameter of more than 0.5 mm into which the fluorescent liquid had penetrated was counted by naked eye. 6. Results (1) Experimental Examples 1 to 16 In Experimental Examples 1 to 16, SiC, TiSi2 and TiC (SiO2 was also used in Experimental Examples 12 and 14) were used as raw materials, and hot pressing was performed at a firing temperature of 1330 to 1420°C to obtain a cooling plate. In the obtained cooling plate, the content of each constituent phase is appropriate, so excellent material properties and product properties are obtained. In addition, the cooling plates of Experimental Examples 1 to 16 have excellent material properties, so it can be said that the ability to cool the cooling object is relatively high. In particular, since the linear thermal expansion coefficient is equivalent to that of alumina, even if the joint obtained by metal bonding of the cooling plate and alumina is repeatedly used between low and high temperatures, the peeling of the two can be suppressed. In addition, the number of etch pits as a product characteristic is 0 or 1, so it is possible to suppress damage starting from etch pits, and it is also possible to suppress temperature unevenness at the location where the etch pits exist as the heat conduction decreases. It should be noted that in Experimental Example 14, the number of etch pits was 0, and the content of the constituent phase SiO2 was slightly higher, reaching 0.7 mass %. Therefore, compared with Experimental Examples 1 to 13, 15, and 16, the four-point bending strength was slightly lower. In the above-mentioned Experimental Examples 1 to 16, since metal Si and metal Ti having high reactivity with water were not used as raw materials, the manufacturing process of the cooling plate was easily managed. (2) Experimental Examples 17 to 24 In the cooling plates obtained in Experimental Examples 17 to 24, the content of each constituent phase is inappropriate, and therefore, a tendency of deterioration of material properties is observed compared to Experimental Examples 1 to 16. In addition, the number of pits, which is a product characteristic of these cooling plates, is 5 or more, and therefore, it is easy for the pits to be destroyed, and it is also easy for temperature unevenness to occur at the position where the pits exist as the heat conduction decreases. By the way, in Experimental Examples 23 and 24, the open porosity is 0, but a large number of pits are found. From this result, it can be seen that an open porosity of 0 does not necessarily mean that the number of pits is 0. Industrial Applicability The cooling plate of the present invention is used, for example, as a cooling plate for metal bonding to an electrostatic chuck, a susceptor, or the like made of alumina. Explanation of symbols 10 semiconductor manufacturing device component, 20 electrostatic chuck, 20a wafer placement surface, 22 electrostatic electrode, 23 power supply terminal, 24 heater electrode, 25 power supply terminal, 28 metal bonding material, 30 cooling plate stack, 31 first substrate, 32 second substrate, 32a punching portion, 33 third substrate, 34 first metal bonding layer, 35 second metal bonding layer, 36 coolant passage, 36a inlet, 36b outlet, 40 stack-chuck bonding layer, 43 terminal insertion hole, 45 terminal insertion hole, 46a coolant supply hole, 46b coolant discharge hole , 51 metal bonding material, 52 metal bonding material, 61 metal bonding material, 70 clamping component, 72 bolt, 90 setting plate, 92 screw hole, 110 component for semiconductor manufacturing equipment, 130 cooling plate stack, 131 first substrate, 132 second substrate, 132a groove, 134 metal bonding layer, 136 refrigerant passage, 210 component for semiconductor manufacturing equipment, 230 cooling plate, 230a refrigerant passage groove, 232 peripheral sealing component, 234 refrigerant passage sealing component, 236 refrigerant passage, 240 cooling plate-chuck bonding layer.

Claims

1. A cooling plate, wherein: The cooling plate contains 42 to 65 mass % of TiSi2, 4 to 16 mass % of TiC, and contains SiC in an amount less than the mass % of TiSi2.

2. The cooling plate according to claim 1, wherein: The cooling plate has a 30000mm 2 The surface above, After the surface is subjected to a penetrant flaw detection test using a fluorescent liquid, when the surface is observed, there is one or less hole having a major diameter of 0.5 mm or more through which the fluorescent liquid has penetrated.

3. The cooling plate according to claim 1 or 2, wherein: The cooling plate contains 0.1 to 0.5 mass % of SiO2.

4. The cooling plate according to claim 1 or 2, wherein: The SiC / TiSi2 mass ratio is 0.47-0.98, and the SiC / TiC mass ratio is 2.7-8.

8.

5. The cooling plate according to claim 1 or 2, wherein: The cooling plate is used to cool the aluminum oxide substrate. The difference in average linear thermal expansion coefficient between the cooling plate and alumina at 40°C to 570°C is less than 0.5 ppm / K, or the average linear thermal expansion coefficient at 40°C to 570°C is 7.2 to 9.0 ppm / K.

6. A component for semiconductor manufacturing equipment, wherein: have: An alumina substrate having electrodes built therein; The cooling plate of claim 5; and A metal bonding layer bonds the alumina substrate and the cooling plate.

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