Current detection method and device, computer device and storage medium

Abstract

The application relates to a current detection method and device, computer equipment and a storage medium. The method comprises the following steps: determining an initial current of a conductor to be detected according to an initial magnetic induction intensity detected by at least one basic magnetic resistance sensor; controlling opening and closing of the at least one basic magnetic resistance sensor and at least one bias magnetic resistance sensor according to the initial current; and detecting a target current of the conductor to be detected through the magnetic resistance sensor in the opening state. The method can detect the predicted current of the conductor to be detected through the basic magnetic resistance sensor and the bias magnetic resistance sensor, then control opening and closing of the basic magnetic resistance sensor and the bias magnetic resistance sensor, and detect the target current according to the adjusted current detection equipment, thereby improving the accuracy of current detection.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of computer, in particular to a current detection method and device, computer equipment and storage medium. BACKGROUND

[0002] For the current measurement demand of power system, the magnetic sensor array is an effective way to replace the magnetic sensor with a magnetic core, and is an effective solution to solve the problems of spatial interference and magnetic core saturation. With the development and cost reduction of Tunnel Magnetoresistance (TMR) and other magnetic sensors, it is possible to form an array of multiple magnetic resistance sensors.

[0003] In the traditional technology, a ring-shaped magnetic sensor array with a coreless structure is usually used to measure the magnetic induction intensity by using multiple magnetic sensor chips around the current-carrying conductor, and the current of the conductor is inversely calculated according to the measured value and the position of the magnetic resistance sensor chip.

[0004] Although this method can detect the current of the conductor, it has the problem of inaccurate detection. SUMMARY

[0005] Therefore, it is necessary to provide a current detection method, device, computer equipment and storage medium capable of accurately measuring the current to solve the above technical problems.

[0006] In a first aspect, the present application provides a current detection method applied to a current detection device, wherein at least two magnetic resistance sensors are arranged in the current detection device; the at least two magnetic resistance sensors include at least one basic magnetic resistance sensor and at least one bias magnetic resistance sensor; the method comprises:

[0007] determining an initial current of the conductor to be measured according to the initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor on the conductor to be measured;

[0008] controlling the opening and closing of the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the initial current;

[0009] detecting a target current of the conductor to be measured by the magnetic resistance sensor in the open state.

[0010] In one embodiment, the controlling the opening and closing of the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the initial current comprises:

[0011] determining a range adjustment strategy corresponding to the current interval to which the initial current belongs;

[0012] controlling the opening and closing of the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the range adjustment strategy.

[0013] In one of the embodiments, the current interval includes a basic current interval and a bias current interval, a maximum value of the basic current interval is less than a minimum value of the bias current interval; determining the range adjustment strategy corresponding to the current interval to which the initial current belongs, includes:

[0014] If the initial current belongs to the basic current interval, the range adjustment strategy is determined as a basic range adjustment strategy; the basic range adjustment strategy is to only start the basic magnetic resistance sensor;

[0015] If the initial current belongs to the bias current interval, the range adjustment strategy is determined as a bias range adjustment strategy; the bias range adjustment strategy is to only start the bias magnetic resistance sensor.

[0016] In one of the embodiments, the bias current interval includes a first bias current interval, a second bias current interval and a third bias current interval, a maximum value of the first bias current interval is less than a minimum value of the second bias current interval, a maximum value of the second bias current interval is less than a minimum value of the third bias current interval; if the initial current belongs to the bias current interval, the range adjustment strategy is determined as a bias range adjustment strategy, including:

[0017] If the initial current belongs to the first bias current interval, the range adjustment strategy is determined as a first bias range adjustment strategy; a magnetic induction intensity detection direction of the first bias magnetic resistance sensor is a direction obtained by, on the basis of a direction pointing to the center of gravity of the current detection device at a position where the first bias magnetic resistance sensor is located, shifting a first preset angle clockwise along a mounting plane of the first bias magnetic resistance sensor;

[0018] If the initial current belongs to the second bias current interval, the range adjustment strategy is determined as a second bias range adjustment strategy; the second bias range adjustment strategy is to only start the second bias magnetic resistance sensor; a magnetic induction intensity detection direction of the second bias magnetic resistance sensor is a direction obtained by, on the basis of a direction pointing to the center of gravity of the current detection device at a position where the second bias magnetic resistance sensor is located, shifting a second preset angle clockwise along a mounting plane of the second bias magnetic resistance sensor;

[0019] If the initial current belongs to the third bias current interval, the range adjustment strategy is determined as a third bias range adjustment strategy; the third bias range adjustment strategy is to only start the third bias magnetic resistance sensor; a magnetic induction intensity detection direction of the third bias magnetic resistance sensor is a direction obtained by, on the basis of a direction pointing to the center of gravity of the current detection device at a position where the third bias magnetic resistance sensor is located, shifting a third preset angle clockwise along a mounting plane of the third bias magnetic resistance sensor;

[0020] The first preset angle is smaller than the second preset angle, and the second preset angle is smaller than the preset angle. The magnetic induction intensity detection direction of the basic magnetic resistance sensor is different from the magnetic induction intensity detection direction of the bias magnetic resistance sensor. The magnetic induction intensity detection direction of the basic magnetic resistance sensor is perpendicular to the direction of the gravity center of the current detection device.

[0021] In one embodiment, the initial current of the conductor to be detected is determined according to the initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor, including:

[0022] The initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor is obtained.

[0023] The offset distance between the conductor to be detected and the gravity center of the current detection device is determined according to the initial magnetic induction intensity.

[0024] The initial current of the conductor to be detected is determined according to the offset distance, the straight line distance and the preset magnetic permeance coefficient. The straight line distance is the distance between any basic magnetic resistance sensor and the gravity center of the current detection device.

[0025] In one embodiment, the target current of the conductor to be detected is detected by the magnetic resistance sensor in the open state, including:

[0026] The target magnetic induction intensity of the conductor to be detected is detected by the magnetic resistance sensor in the open state.

[0027] The target current of the conductor to be detected is determined according to the offset distance, the straight line distance, the preset magnetic permeance coefficient and the target magnetic induction intensity.

[0028] In a second aspect, the application further provides a current detection device, including:

[0029] The initial determination module is configured to determine the initial current of the conductor to be detected according to the initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor.

[0030] The sensor control module is configured to control the opening and closing of the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the initial current.

[0031] The current detection module is configured to detect the target current of the conductor to be detected by the magnetic resistance sensor in the open state.

[0032] In a third aspect, the application further provides a computer device, including a memory and a processor. The memory stores a computer program. When the processor executes the computer program, the following steps are implemented:

[0033] determine an initial current of the conductor to be measured according to the initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor;

[0034] perform on-off control on the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the initial current;

[0035] detect the target current of the conductor to be measured through the magnetic resistance sensor in the on state.

[0036] In a fourth aspect, the present application further provides a computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the following steps:

[0037] determine an initial current of the conductor to be measured according to the initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor;

[0038] perform on-off control on the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the initial current;

[0039] detect the target current of the conductor to be measured through the magnetic resistance sensor in the on state.

[0040] In a fifth aspect, the present application further provides a computer program product, which comprises a computer program, and the computer program is executed by a processor to implement the following steps:

[0041] determine an initial current of the conductor to be measured according to the initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor;

[0042] perform on-off control on the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the initial current;

[0043] detect the target current of the conductor to be measured through the magnetic resistance sensor in the on state.

[0044] The current detection method, device, computer device and storage medium, determine an initial current of the conductor to be measured according to the initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor, perform on-off control on the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the initial current, and detect the target current of the conductor to be measured through the magnetic resistance sensor in the on state. The present embodiment detects the predicted current of the conductor to be measured through the basic magnetic resistance sensor and the bias magnetic resistance sensor, then performs on-off control on the basic magnetic resistance sensor and the bias magnetic resistance sensor, and detects the target current according to the adjusted current detection device, thereby improving the accuracy of current detection. BRIEF DESCRIPTION OF DRAWINGS

[0045] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the following will briefly introduce the drawings needed to be used in the embodiments or related art description. Obviously, the drawings in the following description only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.

[0046] Figure 1 An application environment diagram of the current detection method provided by the present embodiment is shown in the figure.

[0047] Figure 2 A flowchart of the first current detection method provided by the present embodiment is shown in the figure.

[0048] Figure 3 A basic principle diagram of the Biot-Savart law provided by the present embodiment is shown in the figure.

[0049] Figure 4 A structure block diagram of the current detection device provided by the present embodiment is shown in the figure.

[0050] Figure 5 An internal structure diagram of the first computer device provided by the present embodiment is shown in the figure.

[0051] Figure 6 An internal structure diagram of the second computer device provided by the present embodiment is shown in the figure. DETAILED DESCRIPTION

[0052] In order to make the purpose, technical solutions and advantages of the present application more clear, the following will further describe the present application in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application.

[0053] The current detection method provided by the present embodiment can be applied in the application environment as shown in the figure. Figure 1 The current detection device is provided with at least two magnetoresistance sensors; the at least two magnetoresistance sensors include at least one basic magnetoresistance sensor and at least one bias magnetoresistance sensor. The current detection device determines the initial current of the conductor to be detected according to the initial magnetic induction intensity obtained by the at least one basic magnetoresistance sensor detecting the conductor to be detected; controls the opening and closing of the at least one basic magnetoresistance sensor and the at least one bias magnetoresistance sensor according to the initial current; and detects the target current of the conductor to be detected through the magnetoresistance sensor in the open state.

[0054] The magnetic induction intensity detection directions of the basic magnetic resistance sensor and the bias magnetic resistance sensor are different, and the basic magnetic resistance sensor and the bias magnetic resistance sensor can be distributed in six corners of a hexagon. The basic magnetic resistance sensor includes a basic magnetic resistance sensor T1, a basic magnetic resistance sensor T2 and a basic magnetic resistance sensor T3. The bias magnetic resistance sensor includes a bias magnetic resistance sensor T4, a bias magnetic resistance sensor T5 and a bias magnetic resistance sensor T6. The bias magnetic resistance sensor T4 corresponds to a preset first angle β1 of 30°. The bias magnetic resistance sensor T5 corresponds to a preset second angle β2 of 60°. The bias magnetic resistance sensor T6 corresponds to a preset third angle β3 of 90°. A point O represents the gravity center of the current detection device. A point S represents a position of the conductor to be detected. B1 represents the magnetic induction intensity of the basic magnetic resistance sensor T1. B2 represents the magnetic induction intensity of the basic magnetic resistance sensor T2. B3 represents the magnetic induction intensity of the basic magnetic resistance sensor T3. B4 represents the magnetic induction intensity of the bias magnetic resistance sensor T4. B5 represents the magnetic induction intensity of the bias magnetic resistance sensor T5. B6 represents the magnetic induction intensity of the bias magnetic resistance sensor T6. R represents the straight line distance between any magnetic resistance sensor and the gravity center of the current detection device. R1 represents the straight line distance between the basic magnetic resistance sensor T1 and the conductor to be detected. R2 represents the straight line distance between the basic magnetic resistance sensor T2 and the conductor to be detected. R3 represents the straight line distance between the basic magnetic resistance sensor T3 and the conductor to be detected. R4 represents the straight line distance between the bias magnetic resistance sensor T4 and the gravity center of the current detection device. R5 represents the straight line distance between the bias magnetic resistance sensor T5 and the gravity center of the current detection device. R6 represents the straight line distance between the bias magnetic resistance sensor T6 and the gravity center of the current detection device. X represents the offset distance between the conductor to be detected and the gravity center of the current detection device.

[0055] In one exemplary embodiment, as shown in Figure 2 , a current detection method is provided. The method is applied to the current detection device in Figure 1 , and includes the following steps 201 to 203. Wherein:

[0056] Step 201, determining the initial current of the conductor to be detected according to the initial magnetic induction intensity detected by at least one basic magnetic resistance sensor on the conductor to be detected.

[0057] The magnetic resistance sensor can be composed of a ring array magnetic resistance sensor chip. The basic principle of the magnetic resistance sensor is based on Biot-Savart law. For example, the magnetic resistance sensor can be based on a tunnel magnetoresistance effect (TMR) sensor chip. The magnetic resistance sensor can include a basic magnetic resistance sensor and a bias magnetic resistance sensor.

[0058] The three basic magnetic resistance sensors are distributed in an isosceles triangle, and the magnetic resistance strength detection direction of each basic magnetic resistance sensor is perpendicular to the direction from the position of the basic magnetic resistance sensor to the center of the current detection device, that is, perpendicular to the direction of the connecting vector between the basic magnetic resistance sensor and the center of the isosceles triangle.

[0059] The three basic magnetic resistance sensors are distributed in an isosceles triangle, and the magnetic resistance strength detection direction of each basic magnetic resistance sensor is perpendicular to the direction from the position of the basic magnetic resistance sensor to the center of the current detection device, that is, perpendicular to the direction of the connecting vector between the basic magnetic resistance sensor and the center of the isosceles triangle.

[0060] Specifically, the current detection device controls each basic magnetic resistance sensor to obtain the initial magnetic induction strength of the conductor to be detected, determines the offset distance x of the conductor to be detected according to the initial magnetic resistance strength, the magnetic permeance coefficient, the preset initial point, the preset threshold value and the preset iteration number, and determines the initial current of the conductor to be detected according to the initial magnetic resistance strength, the straight line distance R and the offset distance x.

[0061] Step 202, according to the initial current, the opening and closing control of at least one basic magnetic resistance sensor and at least one bias magnetic resistance sensor is performed.

[0062] In some embodiments, according to the initial current, the opening and closing control of at least one basic magnetic resistance sensor and at least one bias magnetic resistance sensor is performed, including: determining the range adjustment strategy corresponding to the current interval to which the initial current belongs; and according to the range adjustment strategy, the opening and closing control of at least one basic magnetic resistance sensor and at least one bias magnetic resistance sensor is performed.

[0063] Specifically, the initial current interval is determined, the range adjustment strategy corresponding to the current interval is determined, the basic magnetic resistance sensor or the bias magnetic resistance sensor that should be turned on is determined according to the range adjustment strategy, and the opening and closing control of at least one basic magnetic resistance sensor and at least one bias magnetic resistance sensor is performed.

[0064] Step 203, detecting the target current of the conductor to be detected through the magnetic resistance sensor in the turned-on state.

[0065] Specifically, according to the target current, the target current is input into the current determination model trained in advance, and the target current of the conductor to be detected is obtained.

[0066] The current detection method determines an initial current of the conductor to be detected according to an initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor, controls the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the initial current, and detects a target current of the conductor to be detected by the magnetic resistance sensor in the open state. The embodiment detects the predicted current of the conductor to be detected by the basic magnetic resistance sensor and the bias magnetic resistance sensor, controls the basic magnetic resistance sensor and the bias magnetic resistance sensor, detects the target current according to the adjusted current detection device, and improves the accuracy of current detection.

[0067] In some embodiments, the current interval includes a basic current interval and a bias current interval, a maximum value of the basic current interval is less than a minimum value of the bias current interval, and the range adjustment strategy corresponding to the current interval to which the initial current belongs is determined, including: if the initial current belongs to the basic current interval, the range adjustment strategy is determined as a basic range adjustment strategy; the basic range adjustment strategy is to only open the basic magnetic resistance sensor; and if the initial current belongs to the bias current interval, the range adjustment strategy is determined as a bias range adjustment strategy; the bias range adjustment strategy is to only open the bias magnetic resistance sensor.

[0068] In some embodiments, the bias current interval includes a first bias current interval, a second bias current interval, and a third bias current interval, a maximum value of the first bias current interval is less than a minimum value of the second bias current interval, and a maximum value of the second bias current interval is less than a minimum value of the third bias current interval; if the initial current belongs to the bias current interval, the range adjustment strategy is determined as a bias range adjustment strategy, including: if the initial current belongs to the first bias current interval, the range adjustment strategy is determined as a first bias range adjustment strategy; a magnetic induction intensity detection direction of the first bias magnetic resistance sensor is a direction obtained by, on the basis of a direction of the first bias magnetic resistance sensor pointing to the center of gravity of the current detection device at a position where the first bias magnetic resistance sensor is located, shifting a first preset angle clockwise along a mounting plane of the first bias magnetic resistance sensor; if the initial current belongs to the second bias current interval, the range adjustment strategy is determined as a second bias range adjustment strategy; the second bias range adjustment strategy is to only open the second bias magnetic resistance sensor; a magnetic induction intensity detection direction of the second bias magnetic resistance sensor is a direction obtained by, on the basis of a direction of the second bias magnetic resistance sensor pointing to the center of gravity of the current detection device at a position where the second bias magnetic resistance sensor is located, shifting a second preset angle clockwise along a mounting plane of the second bias magnetic resistance sensor; and if the initial current belongs to the third bias current interval, the range adjustment strategy is determined as a third bias range adjustment strategy; the third bias range adjustment strategy is to only open the third bias magnetic resistance sensor; a magnetic induction intensity detection direction of the third bias magnetic resistance sensor is a direction obtained by, on the basis of a direction of the third bias magnetic resistance sensor pointing to the center of gravity of the current detection device at a position where the third bias magnetic resistance sensor is located, shifting a third preset angle clockwise along a mounting plane of the third bias magnetic resistance sensor.

[0069] The first preset angle is smaller than the second preset angle, and the second preset angle is smaller than the preset angle; the magnetic induction intensity detection direction of the basic magnetic resistance sensor is different from the magnetic induction intensity detection direction of the bias magnetic resistance sensor; the magnetic induction intensity detection direction of the basic magnetic resistance sensor is perpendicular to the direction of the gravity center of the current detection device.

[0070] For example, when the target current U≤U1 (1kA), the system is in the normal mode, and only the basic magnetic resistance sensor (T1, T2, T3) measures; at this time, the current detection device has the highest accuracy and sensitivity, and is suitable for accurate measurement in a small current range; the measurement range can be 1A~1kA. When U1 (1kA)<U≤U2 (2kA), the system stops the basic magnetic resistance sensor (T1, T2 and T3) from working and switches the bias sensor T4 to work; at this time, the current detection device expands the current measurement range; the measurement range can be 1kA~2kA. When U2 (2kA)<U≤U3 (5kA), the system stops the bias sensor T4 from working and switches the bias sensor T5 to work; at this time, the current detection device further improves the measurement range and is suitable for measurement of a larger current; the measurement range can be 2kA~5kA. When (5kA)<U≤U4 (10kA), the system stops the bias sensor T5 from working and switches the bias sensor T6 to work; at this time, the current detection device reaches the maximum measurement range; the measurement range can be 5kA~10kA. When U>U4, the current detection device measurement reaches saturation.

[0071] The embodiment needs to take smooth transition measures in the mode switching process, can avoid sudden jump of the measurement result, and ensures the continuity and stability of the measurement.

[0072] In some embodiments, the initial current of the conductor to be measured is determined according to the initial magnetic induction intensity detected by at least one basic magnetic resistance sensor, including: obtaining the initial magnetic induction intensity detected by at least one basic magnetic resistance sensor on the conductor to be measured; determining the offset distance between the conductor to be measured and the gravity center of the current detection device according to each initial magnetic induction intensity; and determining the initial current of the conductor to be measured according to the offset distance, the straight line distance and the preset magnetic permeance coefficient.

[0073] The straight line distance is the distance between any basic magnetic resistance sensor and the gravity center of the current detection device.

[0074] Specifically, the current detection device controls each basic magnetic resistance sensor to obtain the initial magnetic induction intensity of the conductor to be measured, determines the offset distance x of the conductor to be measured according to the initial magnetic induction intensity, the preset magnetic permeance coefficient, the preset initial point, the preset threshold value and the preset iteration number, and determines the initial current of the conductor to be measured according to the initial magnetic induction intensity, the straight line distance R and the offset distance x.

[0075] Exemplarily, the embodiment can also input the initial magnetic induction intensity B1, the initial magnetic induction intensity B2, and the initial magnetic induction intensity B3 to a preset distance parameter determination model to obtain the offset distance x of the conductor to be measured, and then determine the initial current of the conductor to be measured through the following formula (1-1).

[0076] (1-1)

[0077] wherein B1 is the initial magnetic induction intensity of the basic magnetic resistance sensor T1; R is the straight-line distance between the basic magnetic resistance sensor T1 and the center of gravity of the current detection device; x is the offset distance between the conductor to be measured and the center of gravity of the current detection device; M is a preset magnetic permeance coefficient; I is the initial current; and θ1 is the included angle between the line connecting the basic magnetic resistance sensor T1 and the center of gravity O and the line connecting the offset distance x.

[0078] Exemplarily, the distance parameter determination model can be constructed based on Newton method, denoted as y=(x, cosθ1), F=[f1, f2] T , preset initial point y(0)=(x(0), cosθ1(0))=(0, 1), threshold value Δ=1e-4, and iteration number is 10 times, as shown in the following formulas (1-2) to (1-5).

[0079] (1-2)

[0080] (1-3)

[0081] (1-4)

[0082] (1-5)

[0083] wherein n is the iteration number; B1 is the initial magnetic induction intensity of the basic magnetic resistance sensor T1; B2 is the initial magnetic induction intensity of the basic magnetic resistance sensor T2; B3 is the initial magnetic induction intensity of the basic magnetic resistance sensor T3; R is the straight-line distance between the basic magnetic resistance sensor T1 and the center of gravity of the current detection device; x is the offset distance between the conductor to be measured and the center of gravity of the current detection device; and θ1 is the included angle between the line connecting the basic magnetic resistance sensor T1 and the center of gravity O and the line connecting the offset distance x.

[0084] It should be noted that the embodiment can also determine the linear distance r1 between the basic magnetic resistance sensor T1 and the conductor to be measured, the linear distance r2 between the basic magnetic resistance sensor T2 and the conductor to be measured, the linear distance r3 between the basic magnetic resistance sensor T3 and the conductor to be measured, the angle a1, the angle a2 and the angle a3 according to the determined linear distance R, the offset distance x between the conductor to be measured and the center of gravity of the current detection device, and the angle θ1 through the following formulas (1-6) to (1-11). In the embodiment, the angle θ2 and the angle θ3 can also be determined according to the angle θ1, θ1+θ2=120°, and θ3-θ1=120°.

[0085] (1-6)

[0086] (1-7)

[0087] (1-8)

[0088] (1-9)

[0089] (1-10)

[0090] (1-11)

[0091] wherein R is the linear distance between any basic magnetic resistance sensor and the center of gravity of the current detection device; x is the offset distance between the conductor to be measured and the center of gravity of the current detection device; the angle a1 is the angle between the linear distance r1 and the line connecting the basic magnetic resistance sensor T1 and the center of gravity O; the angle a2 is the angle between the linear distance r2 and the line connecting the basic magnetic resistance sensor T2 and the center of gravity O; the angle a3 is the angle between the linear distance r3 and the line connecting the basic magnetic resistance sensor T3 and the center of gravity O; θ1 is the angle between the line connecting the basic magnetic resistance sensor T1 and the center of gravity O and the offset distance x; θ2 is the angle between the line connecting the basic magnetic resistance sensor T2 and the center of gravity O and the offset distance x; and θ3 is the angle between the line connecting the basic magnetic resistance sensor T3 and the center of gravity O and the offset distance x.

[0092] It should be noted that the preset magnetic permeability in the embodiment can be determined by the following formula (1-12).

[0093] (1-12)

[0094] wherein M is the preset magnetic permeability; and μ0 is the vacuum magnetic permeability. For example, as shown in the basic principle diagram of the Biot-Savart law, Figure 3 is the measured current vector. ​is a unit vector in the direction of the sensitive axis of the magnetoresistance sensor, i.e. |=1; is a vector between the magnetoresistance sensor and the wire to be measured.

[0095] The embodiment obtains initial magnetic induction intensity detected by at least one basic magnetoresistance sensor on the conductor to be measured; determines the offset distance between the conductor to be measured and the gravity center of the current detection device according to each initial magnetic induction intensity; and determines the initial current of the conductor to be measured more accurately according to the offset distance, the straight-line distance and the preset magnetic permeance coefficient.

[0096] In some embodiments, the target current of the conductor to be measured is detected by the magnetoresistance sensor in the open state, including: detecting the target magnetic induction intensity of the conductor to be measured by the magnetoresistance sensor in the open state; and determining the target current of the conductor to be measured according to the offset distance, the straight-line distance, the preset magnetic permeance coefficient and the target magnetic induction intensity.

[0097] Specifically, the target magnetic induction intensity of the conductor to be measured is detected by the magnetoresistance sensor in the open state, and the target current of the conductor to be measured is determined according to the target magnetic induction intensity, the preset magnetic permeance coefficient, the offset distance and the straight-line distance.

[0098] For example, if the target magnetic induction intensity is determined by the basic magnetoresistance sensor, the target current of the conductor to be measured is determined by the above formula (1-1). If the target magnetic induction intensity is determined by the offset magnetoresistance sensor, the target current of the conductor to be measured is determined by the following formula (1-13).

[0099] (1-13)

[0100] Wherein, I is the target current; M is the preset magnetic permeance coefficient; B4 is the target magnetic induction intensity of the basic magnetoresistance sensor T4; B5 is the target magnetic induction intensity of the basic magnetoresistance sensor T5; B6 is the target magnetic induction intensity of the basic magnetoresistance sensor T6; the included angle α4 is the included angle between the straight-line distance r4 and the line connecting the basic magnetoresistance sensor T4 and the gravity center O; the included angle α5 is the included angle between the straight-line distance r5 and the line connecting the basic magnetoresistance sensor T5 and the gravity center O; the included angle α6 is the included angle between the straight-line distance r6 and the line connecting the basic magnetoresistance sensor T6 and the gravity center O; β1 is the offset preset first angle corresponding to the offset magnetoresistance sensor T4 (β1=30°); β2 is the offset preset second angle corresponding to the offset magnetoresistance sensor T5 (β2=60°); β3 is the offset preset third angle corresponding to the offset magnetoresistance sensor T6 (β3=90°).

[0101] It should be noted that the embodiment can also determine the linear distance r4 between the basic magnetic resistance sensor T4 and the conductor to be measured, the linear distance r5 between the basic magnetic resistance sensor T5 and the conductor to be measured, the linear distance r6 between the basic magnetic resistance sensor T6 and the conductor to be measured, the angle a4, the angle a5 and the angle a6 according to the determined linear distance R, the offset distance x between the conductor to be measured and the gravity center of the current detection device, the angle θ1 and the angle θ2 through the following formulas (1-14) to (1-19). In the embodiment, the angle θ4, the angle θ5 and the angle θ6 can also be determined according to the angle θ1 and the angle θ2, θ4=θ1+60°, θ5=θ2+60°, θ6=θ2-60°.

[0102] (1-14)

[0103] (1-15)

[0104] (1-16)

[0105] (1-17)

[0106] (1-18)

[0107] (1-19)

[0108] Wherein, R is the linear distance between any basic magnetic resistance sensor and the gravity center of the current detection device; x is the offset distance between the conductor to be measured and the gravity center of the current detection device; the angle a4 is the angle between the linear distance r4 and the basic magnetic resistance sensor T4 and the gravity center O; the angle a5 is the angle between the linear distance r5 and the basic magnetic resistance sensor T5 and the line connecting the gravity center O; the angle a6 is the angle between the linear distance r6 and the basic magnetic resistance sensor T6 and the gravity center O; θ1 is the angle between the line connecting the basic magnetic resistance sensor T1 and the gravity center O and the offset distance x; θ2 is the angle between the line connecting the basic magnetic resistance sensor T2 and the gravity center O and the offset distance x.

[0109] The embodiment detects the target magnetic induction intensity of the conductor to be measured through the open-state magnetic resistance sensor; and according to the offset distance, the linear distance, the preset magnetic permeability and the target magnetic induction intensity, the target current of the conductor to be measured can be determined more accurately.

[0110] It should be understood that although the steps in the flowcharts involved in the embodiments described above are shown in sequence according to the arrows, the steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, the execution of the steps is not strictly limited in sequence, and the steps can be executed in other sequences. Moreover, at least some of the steps in the flowcharts involved in the embodiments described above can include multiple steps or multiple stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of the steps or stages is not necessarily sequential, but can be executed alternately or alternately with at least part of other steps or steps or stages in other steps.

[0111] Based on the same inventive concept, the embodiments of the present application also provide a current detection device for implementing the current detection method described above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme described in the above method, so the specific limitations in one or more current detection device embodiments provided below can refer to the limitations of the current detection method described above, which will not be repeated here.

[0112] In an exemplary embodiment, as shown in Figure 4 A current detection device is provided, comprising: an initial determination module 10, a sensing control module 11 and a current detection module 12, wherein:

[0113] The initial determination module 10 is configured to determine an initial current of the conductor to be measured according to an initial magnetic induction intensity obtained by at least one basic magnetic resistance sensor detecting the conductor to be measured;

[0114] The sensing control module 11 is configured to control the opening and closing of the at least one basic magnetic resistance sensor and the at least one offset magnetic resistance sensor according to the initial current.

[0115] The current detection module 12 is configured to detect a target current of the conductor to be measured through the magnetic resistance sensor in the open state.

[0116] In an embodiment, Figure 4 The sensing control module 11 in the above embodiment is further configured to determine a range adjustment strategy corresponding to the current interval to which the initial current belongs, and control the opening and closing of the at least one basic magnetic resistance sensor and the at least one offset magnetic resistance sensor according to the range adjustment strategy.

[0117] In an embodiment, Figure 4The sensing control module 11 in the current detection device is further configured to determine the range adjustment strategy as a basic range adjustment strategy if the initial current belongs to a basic current interval, wherein the basic range adjustment strategy is to only turn on the basic magnetic resistance sensor; and determine the range adjustment strategy as a bias range adjustment strategy if the initial current belongs to a bias current interval, wherein the bias range adjustment strategy is to only turn on the bias magnetic resistance sensor.

[0118] In one embodiment, Figure 4 The sensing control module 11 in the current detection device is further configured to determine the range adjustment strategy as a first bias range adjustment strategy if the initial current belongs to a first bias current interval, wherein a magnetic induction intensity detection direction of the first bias magnetic resistance sensor is a direction obtained by shifting a clockwise direction of a direction from a position of the first bias magnetic resistance sensor to a center of the current detection device by a first preset angle along a mounting plane of the first bias magnetic resistance sensor; determine the range adjustment strategy as a second bias range adjustment strategy if the initial current belongs to a second bias current interval, wherein a magnetic induction intensity detection direction of the second bias magnetic resistance sensor is a direction obtained by shifting a clockwise direction of a direction from a position of the second bias magnetic resistance sensor to the center of the current detection device by a second preset angle along a mounting plane of the second bias magnetic resistance sensor; determine the range adjustment strategy as a third bias range adjustment strategy if the initial current belongs to a third bias current interval, wherein a magnetic induction intensity detection direction of the third bias magnetic resistance sensor is a direction obtained by shifting a clockwise direction of a direction from a position of the third bias magnetic resistance sensor to the center of the current detection device by a third preset angle along a mounting plane of the third bias magnetic resistance sensor; and the first preset angle is smaller than the second preset angle, and the second preset angle is smaller than the preset angle; the magnetic induction intensity detection direction of the basic magnetic resistance sensor is different from the magnetic induction intensity detection direction of the bias magnetic resistance sensor, and the magnetic induction intensity detection direction of the basic magnetic resistance sensor is a direction perpendicular to a direction from a position of the basic magnetic resistance sensor to the center of the current detection device.

[0119] In one embodiment, Figure 4 The initial determination module 10 in the current detection device is further configured to obtain initial magnetic induction intensities detected by at least one basic magnetic resistance sensor on the conductor to be detected; determine an offset distance between the conductor to be detected and a center of the current detection device according to the initial magnetic induction intensities; and determine an initial current of the conductor to be detected according to the offset distance, a straight line distance and a preset magnetic permeance coefficient, wherein the straight line distance is a distance between any basic magnetic resistance sensor and the center of the current detection device.

[0120] In one embodiment, Figure 4The current detection module 12 in the current detection device is further configured to detect a target magnetic induction intensity of the conductor to be measured by the magnetoresistance sensor in the on state; and determine the target current of the conductor to be measured according to the offset distance, the straight-line distance, the preset magnetic permeance coefficient and the target magnetic induction intensity.

[0121] The modules in the current detection device can be implemented by software, hardware or a combination thereof. The modules can be embedded in or independent of a processor in a computer device in hardware form, or stored in a memory in the computer device in software form, so as to be called and executed by the processor.

[0122] In an exemplary embodiment, a computer device, which can be a server, is provided. An internal structure diagram of the computer device can be as shown in FIG. 1. Figure 5 The computer device includes a processor, a memory, an input / output interface and a communication interface. The processor, the memory and the input / output interface are connected through a system bus, and the communication interface is connected to the system bus through the input / output interface. The processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for running the operating system and the computer program in the non-volatile storage medium. The database of the computer device is configured to store data. The input / output interface of the computer device is configured to exchange information between the processor and external devices. The communication interface of the computer device is configured to communicate with external terminals through a network connection. The computer program is executed by the processor to implement a current detection method.

[0123] In an exemplary embodiment, a computer device, which can be a terminal, is provided. An internal structure diagram of the computer device can be as shown in FIG. 2. Figure 6The computer device includes a processor, a memory, an input / output interface, a communication interface, a display unit and an input device. The processor, the memory and the input / output interface are connected through a system bus. The communication interface, the display unit and the input device are connected to the system bus through the input / output interface. The processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for running the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is configured to exchange information between the processor and external devices. The communication interface of the computer device is configured to perform wired or wireless communication with external terminals. The wireless communication can be achieved through WIFI, mobile cellular network, NFC (Near Field Communication) or other technologies. The computer program is executed by the processor to implement a current detection method. The display unit of the computer device is configured to form a visually visible picture, which can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen. The input device of the computer device can be a touch layer overlaid on the display screen, or a key, a trackball or a touchpad arranged on the shell of the computer device, or an external keyboard, a touchpad or a mouse, etc.

[0124] Those skilled in the art can understand that, Figure 5 and Figure 6 The structure shown in the figure is only a block diagram of part of the structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0125] In one embodiment, a computer device is also provided, including a memory and a processor. The memory stores a computer program. The processor executes the computer program to implement the steps in the above method embodiments.

[0126] In one embodiment, a computer readable storage medium is provided, which stores a computer program. The computer program is executed by a processor to implement the steps in the above method embodiments.

[0127] In one embodiment, a computer program product is provided, which includes a computer program. The computer program is executed by a processor to implement the steps in the above method embodiments.

[0128] It should be noted that the data involved in the present application (including but not limited to data for analysis, stored data, displayed data, etc.) are all information and data authorized by the user or authorized by all parties, and the collection, use and processing of related data need to comply with relevant regulations.

[0129] It can be understood by those skilled in the art that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing related hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when the computer program is executed, it can include the processes of the above-mentioned embodiments of each method. Any reference to memory, database or other medium used in the embodiments provided by the present application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical storage, high-density embedded non-volatile memory, resistive memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration but not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The database involved in the embodiments provided by the present application can include at least one of a relational database and a non-relational database. The non-relational database can include a distributed database based on a block chain, etc., without being limited thereto. The processor involved in the embodiments provided by the present application can be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., without being limited thereto.

[0130] The technical features of the above embodiments can be combined in any way. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described, but as long as the combination of the technical features does not exist contradictory, it should be considered as the scope of the present application.

[0131] The above-described embodiments are merely illustrative of several embodiments of the present application, and the description is relatively specific and detailed, but should not be understood as a limitation on the scope of the patent. It should be noted that for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are all within the scope of the present application. Therefore, the scope of protection of the present application should be subject to the appended claims.

Claims

1. A current detection method characterized by, The application is applied to a current detection device provided with at least two magnetic resistance sensors; The at least two magnetic resistance sensors include at least one basic magnetic resistance sensor and at least one bias magnetic resistance sensor; the method includes: determining an initial current of the conductor to be detected according to an initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor; if the initial current belongs to a basic current interval, determining a range adjustment strategy as a basic range adjustment strategy; the basic range adjustment strategy is to only start the basic magnetic resistance sensor; if the initial current belongs to a bias current interval, determining a range adjustment strategy as a bias range adjustment strategy; the bias range adjustment strategy is to only start the bias magnetic resistance sensor; controlling the opening and closing of the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the range adjustment strategy; detecting a target current of the conductor to be detected through the magnetic resistance sensor in the starting state; wherein the bias current interval includes a first bias current interval, a second bias current interval and a third bias current interval, the maximum value of the first bias current interval is less than the minimum value of the second bias current interval, and the maximum value of the second bias current interval is less than the minimum value of the third bias current interval; if the initial current belongs to a bias current interval, determining a range adjustment strategy as a bias range adjustment strategy, including: if the initial current belongs to the first bias current interval, determining a range adjustment strategy as a first bias range adjustment strategy; the magnetic induction intensity detection direction of the first bias magnetic resistance sensor is, on the basis of the direction of the gravity center of the current detection device at the position where the first bias magnetic resistance sensor is located, a direction obtained by shifting a first preset angle clockwise along the mounting plane of the first bias magnetic resistance sensor; if the initial current belongs to the second bias current interval, determining a range adjustment strategy as a second bias range adjustment strategy; the second bias range adjustment strategy is to only start the second bias magnetic resistance sensor; the magnetic induction intensity detection direction of the second bias magnetic resistance sensor is, on the basis of the direction of the gravity center of the current detection device at the position where the second bias magnetic resistance sensor is located, a direction obtained by shifting a second preset angle clockwise along the mounting plane of the second bias magnetic resistance sensor; if the initial current belongs to the third bias current interval, determining a range adjustment strategy as a third bias range adjustment strategy; the third bias range adjustment strategy is to only start the third bias magnetic resistance sensor; the magnetic induction intensity detection direction of the third bias magnetic resistance sensor is, on the basis of the direction of the gravity center of the current detection device at the position where the third bias magnetic resistance sensor is located, a direction obtained by shifting a third preset angle clockwise along the mounting plane of the third bias magnetic resistance sensor; wherein the first preset angle is less than the second preset angle, and the second preset angle is less than the third preset angle; the magnetic induction intensity detection direction of the basic magnetic resistance sensor is different from that of the bias magnetic resistance sensor; the magnetic induction intensity detection direction of the basic magnetic resistance sensor is perpendicular to the direction of the gravity center of the current detection device at the position where the basic magnetic resistance sensor is located.

2. The method of claim 1, wherein, The initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor on the conductor to be detected is used to determine the initial current of the conductor to be detected, including: Obtaining the initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor on the conductor to be detected; According to each of the initial magnetic induction intensity, the offset distance between the conductor to be detected and the center of gravity of the current detection device is determined; According to the offset distance, the straight line distance and the preset magnetic permeance coefficient, the initial current of the conductor to be detected is determined; the straight line distance is the distance between any of the basic magnetic resistance sensors and the center of gravity of the current detection device; The target current of the conductor to be detected is detected by the magnetic resistance sensor in the open state, including: Wherein, B1 is the initial magnetic induction intensity of the basic magnetic resistance sensor T1; R is the straight line distance between the basic magnetic resistance sensor T1 and the gravity center of the current detection device; x is the offset distance between the conductor to be detected and the gravity center of the current detection device; M is the preset magnetic permeance coefficient; I is the initial current; is the angle between the line connecting the gravity center of the basic magnetic resistance sensor T1 and the current detection device and the line connecting the offset distance x.

3. The method of claim 2, wherein, In the case that the magnetic resistance sensor is a basic magnetic resistance sensor, the target current of the conductor to be detected is detected by the magnetic resistance sensor in the open state based on the following formula: The target current of the conductor to be detected is detected by the magnetic resistance sensor in the open state, including: Wherein, B1 is the target magnetic induction intensity of the basic magnetic resistance sensor T1; R is the straight line distance between the basic magnetic resistance sensor T1 and the center of gravity of the current detection device; x is the offset distance between the conductor to be measured and the center of gravity of the current detection device; M is a preset magnetic permeance coefficient; I is the target current; is the included angle between the line connecting the basic magnetic resistance sensor T1 and the center of gravity of the current detection device and the offset distance x.

4. The method of claim 2, wherein, In the case that the magnetic resistance sensor is a bias magnetic resistance sensor, the target current of the conductor to be detected is detected by the magnetic resistance sensor in the open state based on the following formula: Wherein, I is the target current; M is the preset magnetic permeance coefficient; B4 is the target magnetic induction intensity of the basic magnetic resistance sensor T4; B5 is the target magnetic induction intensity of the basic magnetic resistance sensor T5; B6 is the target magnetic induction intensity of the basic magnetic resistance sensor T6; The included angle α4 is the included angle between the straight line distance r4 and the center of gravity between the basic magnetic resistance sensor T4 and the current detection device; The included angle α5 is the included angle between the straight line distance r5 and the connecting line between the basic magnetic resistance sensor T5 and the center of gravity of the current detection device; The included angle α6 is the included angle between the straight line distance r6 and the center of gravity between the basic magnetic resistance sensor T6 and the current detection device; β1 is the offset preset first angle corresponding to the bias magnetic resistance sensor T4; β2 is the offset preset second angle corresponding to the bias magnetic resistance sensor T5; β3 is the offset preset third angle corresponding to the bias magnetic resistance sensor T6. The device comprises:

5. A current detection device, characterized by, An initial determination module is configured to determine the initial current of the conductor to be detected according to the initial magnetic induction intensity detected by the at least one basic magnetic resistance sensor on the conductor to be detected; ​ The sensor control module is configured to: if the initial current belongs to a basic current interval, determine a range adjustment strategy as a basic range adjustment strategy; the basic range adjustment strategy is to only turn on a basic magnetic resistance sensor; if the initial current belongs to a bias current interval, determine a range adjustment strategy as a bias range adjustment strategy; the bias range adjustment strategy is to only turn on a bias magnetic resistance sensor; and perform on-off control on the at least one basic magnetic resistance sensor and the at least one bias magnetic resistance sensor according to the range adjustment strategy; wherein the bias current interval includes a first bias current interval, a second bias current interval, and a third bias current interval, a maximum value of the first bias current interval is less than a minimum value of the second bias current interval, and a maximum value of the second bias current interval is less than a minimum value of the third bias current interval; if the initial current belongs to a bias current interval, determining a range adjustment strategy as a bias range adjustment strategy includes: if the initial current belongs to a first bias current interval, determining a range adjustment strategy as a first bias range adjustment strategy; a magnetic induction intensity detection direction of the first bias magnetic resistance sensor is a direction obtained by offsetting a first preset angle clockwise along a mounting plane of the first bias magnetic resistance sensor on a basis of a direction pointing to a gravity center of the current detection device at a position where the first bias magnetic resistance sensor is located; if the initial current belongs to a second bias current interval, determining a range adjustment strategy as a second bias range adjustment strategy; the second bias range adjustment strategy is to only turn on a second bias magnetic resistance sensor; a magnetic induction intensity detection direction of the second bias magnetic resistance sensor is a direction obtained by offsetting a second preset angle clockwise along a mounting plane of the second bias magnetic resistance sensor on a basis of a direction pointing to the gravity center of the current detection device at a position where the second bias magnetic resistance sensor is located; if the initial current belongs to a third bias current interval, determining a range adjustment strategy as a third bias range adjustment strategy; the third bias range adjustment strategy is to only turn on a third bias magnetic resistance sensor; a magnetic induction intensity detection direction of the third bias magnetic resistance sensor is a direction obtained by offsetting a third preset angle clockwise along a mounting plane of the third bias magnetic resistance sensor on a basis of a direction pointing to the gravity center of the current detection device at a position where the third bias magnetic resistance sensor is located; wherein the first preset angle is less than the second preset angle, and the second preset angle is less than the third preset angle; a magnetic induction intensity detection direction of the basic magnetic resistance sensor is different from a magnetic induction intensity detection direction of the bias magnetic resistance sensor; and the magnetic induction intensity detection direction of the basic magnetic resistance sensor is a direction obtained by perpendicularly pointing to the gravity center of the current detection device at a position where the basic magnetic resistance sensor is located. The current detection module is configured to detect a target current of the conductor to be detected through the magnetic resistance sensor in the on state. 6.A computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the computer device is configured to perform the method according to any one of claims 1-5 when the computer program is executed by the processor. The processor executes the computer program to implement the steps of the method of any one of claims 1 to 4.

7. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method of any one of claims 1 to 4.

8. A computer program product comprising a computer program, characterized in that, The computer program is executed by the processor to implement the steps of the method of any one of claims 1 to 4.

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