Battery grid line preparation method, photovoltaic cell preparation method and photovoltaic cell

By opening the laser film to form the curved or bending surface dielectric layer of the semi-finished photovoltaic cell, combined with electroplating technology, the problems of high cost and pull-off force difference in the metallization process of existing photovoltaic cells are solved, and a more stable photovoltaic cell structure and reduction are achieved cost effect.

CN119170672APending Publication Date: 2024-12-20TRINA SOLAR CO LTD
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Patent Information

Application Number
CN202411270776.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-11
Publication Date
2024-12-20

AI Technical Summary

Technical Problem

During the metallization process of existing photovoltaic cells, screen printing costs are high, laser etching during electroplating may lead to poor gate wire pull-off force, cumbersome masking process and high cost, making it difficult to effectively reduce the cost of photovoltaic cells and improve them. Structural stability.

Method used

The photovoltaic cell semi-finished product containing a dielectric layer is opened by using laser to form a curved or bent surface of the film opening area, increase the contact area between the dielectric layer and the gate line, and then electroplating is carried out to prepare the gate line to increase the pull-off force of the gate line and the battery. Structural stability.

Benefits of technology

The gate lines prepared by electroplating after laser film opening significantly improve the pull-off force of the metal gate lines, enhance the structural stability of the photovoltaic cell, reduce costs, and simplify the process flow.

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Abstract

The invention provides a battery grid line preparation method, a photovoltaic cell preparation method and a photovoltaic cell, and the battery grid line preparation method comprises the steps: obtaining a grid line to-be-manufactured piece which is a photovoltaic cell semi-finished product containing a dielectric layer before the grid line is electroplated; laser is adopted to carry out film opening on the grid line to-be-manufactured piece, the laser is configured to form a film opening area on the grid line to-be-manufactured piece, and a dielectric layer on the side edge of the film opening area is provided with a bent face or a bent face making contact with the grid line; and electroplating the grid line to-be-manufactured piece subjected to laser treatment, and forming a battery grid line in the film opening area. The grid line pulling-out force is improved, and the photovoltaic cell structure is more stable.
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Description

Technical Field

[0001] The present invention mainly relates to the technical field of photovoltaic cell preparation, and in particular to a method for preparing a battery grid line, a method for preparing a photovoltaic cell, and a photovoltaic cell. Background Art

[0002] With the development of photovoltaic technology, the photoelectric conversion efficiency of batteries has gradually increased and the cost has gradually decreased. However, due to the high price of silver paste used in the screen printing process, the cost of silver paste accounts for about 40% of the non-silicon cost of the battery, making the cost of the battery high. Another way is to replace the silver in the metallization process with cheap metals such as copper through electroplating, chemical plating and other technologies, making electroplating and chemical plating technologies a new way to achieve cost reduction.

[0003] At present, most photovoltaic cells are metallized by screen printing. In the screen printing process, the paste is first printed on the cell according to a certain pattern, and then the active ingredients in the paste corrode and burn through the surface dielectric material at high temperature, thereby connecting with the conductive substrate on the top to realize the current extraction. However, the paste used in screen printing contains a high amount of silver, so the cost is relatively high.

[0004] Electroplating metallization has attracted much attention because it can significantly reduce costs by using relatively cheap metals such as copper and nickel to prepare metal gate lines. Etching is required before electroplating metallization. Laser etching is to directly remove the dielectric material on the surface through laser processing. This method is short in time and has high output, but there may be laser damage. At the same time, after laser processing, the roughness of the laser area is low, which will cause poor gate line pull-off force. Masking is to cover the surface of the dielectric material with a layer of mask material, and then pattern the mask layer to remove part of the mask layer to expose the dielectric material at the bottom. Subsequently, the exposed dielectric material is etched away by wet etching to expose the conductive material at the bottom, and then subsequent electroplating is performed. The masking method causes less damage to the sample itself, but the process is cumbersome and costly. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a method for preparing a battery grid line, a method for preparing a photovoltaic cell and a photovoltaic cell, so as to improve the grid line pull-off force and make the photovoltaic cell structure more stable.

[0006] To solve the above technical problems, in the first aspect, the present invention provides a method for preparing a battery grid line, comprising: obtaining a grid line workpiece, wherein the grid line workpiece is a semi-finished photovoltaic cell containing a dielectric layer before electroplating the grid line; using a laser to open a film on the grid line workpiece, wherein the laser is configured to form an open film area on the grid line workpiece, and the dielectric layer on the side of the open film area has a curved surface or a bent surface in contact with the grid line; and electroplating the laser-treated grid line workpiece to form the battery grid line in the open film area.

[0007] Optionally, using laser to open the film of the grid line workpiece includes: using laser to open the film once for forming the grid line workpiece, wherein the once-forming opening means forming the required grid line shape by opening the film for the first time.

[0008] Optionally, the laser is a laser with a diamond-shaped spot.

[0009] Optionally, the method further includes: before opening the film, adjusting the working head position of the laser to an initial position, and setting the spot size and spot shape of the laser.

[0010] Optionally, the method further includes: performing a quality inspection on the surface of the grid line workpiece after the first film opening to obtain the film opening quality of the grid line workpiece; if the film opening quality does not meet the preset requirements, performing additional film opening on the film opening area.

[0011] Optionally, using laser to open the film of the grid line workpiece includes: using laser to open the film for multiple times, wherein the multiple times of opening the film are opening areas formed by laser each time complement each other to form the required grid line shape.

[0012] Optionally, the multiple molding and film opening is a two-time molding and film opening, wherein the first film opening uses a square spot or a circular spot laser to form a grid line body, and the second film opening forms a grid line sub-body on the side of the grid line body, and the grid line sub-body is a protruding structure formed on the side of the grid line body.

[0013] Optionally, the gate line main body is a rectangular structure, the gate line auxiliary body is a triangular structure, one side of the triangular structure is in contact with the rectangular parallelepiped structure, and the vertex of the triangular structure faces the dielectric layer.

[0014] In a second aspect, the present invention provides a method for preparing a photovoltaic cell, comprising: preparing a grid line workpiece, wherein the grid line workpiece is a semi-finished photovoltaic cell containing a dielectric layer before electroplating the grid line; preparing a grid line on the surface of the grid line workpiece, wherein the grid line is prepared using the battery grid line preparation method described in the first aspect.

[0015] In a third aspect, the present invention provides a photovoltaic cell, comprising: a substrate, a doped conductive layer on the substrate, a dielectric layer on the doped conductive layer, and a gate line, wherein the gate line is embedded in the dielectric layer and in contact with the doped conductive layer, and the contact surface between the gate line and the dielectric layer is a curved surface or a bent surface.

[0016] Optionally, the grid line is prepared by the battery grid line preparation method as described in the first aspect.

[0017] Compared with the prior art, the present invention has the following advantages: when preparing the gate line, firstly, a gate line workpiece is obtained, which is a semi-finished photovoltaic cell containing a dielectric layer before the gate line is electroplated; then, a laser is used to open the film of the gate line workpiece, and the laser is configured to form an opening film area on the gate line workpiece, and the dielectric layer on the side of the opening film area has a curved surface or a bent surface in contact with the gate line; finally, the laser-treated gate line workpiece is electroplated to form a battery gate line in the opening film area, thereby increasing the pull-off force of the gate line and making the photovoltaic cell structure more stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are included to provide a further understanding of the present application. They are included and constitute a part of the present application. The accompanying drawings illustrate embodiments of the present application and together with the present specification serve to explain the principles of the present application. In the accompanying drawings:

[0019] Figure 1 It is a schematic diagram of the process of a method for preparing a battery grid line according to an embodiment of the present invention;

[0020] Figure 2 This is a schematic diagram of a conventional spot laser and the grating lines it forms;

[0021] Figure 3 is a schematic diagram of a laser with a diamond-shaped spot and the grating lines formed therein in one embodiment of the present invention;

[0022] Figure 4 It is a schematic structural diagram of a photovoltaic cell according to an embodiment of the present invention.

[0023] In the figure:

[0024] 410-base;

[0025] 420-doped conductive layer;

[0026] 430- dielectric layer;

[0027] 440-grid line. DETAILED DESCRIPTION

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0029] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0030] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0031] Figure 1 is a schematic diagram of a process for preparing a battery grid line according to an embodiment of the present invention, with reference to Figure 1 As shown, method 100 includes: S110, obtaining a grid line workpiece, wherein the grid line workpiece is a semi-finished photovoltaic cell containing a dielectric layer before electroplating the grid line; S120, using a laser to open a film on the grid line workpiece, wherein the laser is configured to form an open film area on the grid line workpiece, and the dielectric layer on the side of the open film area has a curved surface or a bent surface in contact with the grid line; S130, electroplating the laser-processed grid line workpiece to form the battery grid line in the open film area.

[0032] The current process of preparing the grid lines of photovoltaic cells by electroplating is as follows: first, the dielectric layer on the surface of the cell (semi-finished product) is partially removed by laser etching or masking to expose the conductive substrate at the bottom, and then the metal grid lines are prepared on the exposed substrate. The patterning (film opening) process can remove the dielectric material in the grid line area and expose the conductive material at the bottom, so as to achieve current conduction in the subsequent electroplating process and realize the growth of metal grid lines.

[0033] In conventional grid line preparation methods, the contact between the prepared grid lines and the dielectric layer is a planar contact, that is, since the grid line area after laser etching, that is, the film opening area, is relatively smooth, the contact area between the metal grid line and the side dielectric layer is small, resulting in poor metal grid line pull-off force. In this embodiment, unlike the conventional grid line preparation method, this method forms a curved surface or a bent surface on the side of the film opening area during laser film opening, so that the dielectric layer on the side of the film opening area has a higher surface area, and then in the subsequent grid line electroplating process, the contact area between the metal grid line and the bottom dielectric layer can be increased to improve the grid line pull-off force, and the photovoltaic cell structure is more stable.

[0034] In one example, using a laser to open a film on a workpiece to be made of gate lines may be using a laser to open a film once on the workpiece to be made of gate lines, wherein the once-opening film means that a desired gate line shape is formed by opening the film for the first time.

[0035] In this embodiment, the performance of the laser and the requirements for the shape of the metal grid lines are comprehensively considered. In the process of opening the film of the grid line workpiece, if all conditions permit, the one-time opening of the film can naturally reduce the process steps of laser opening and reduce the preparation errors of the grid lines. In addition, it is also necessary to see that this one-time opening method requires higher requirements for laser performance. In actual application, it is necessary to adjust laser parameters such as laser power, overlap rate, frequency, etc. so that the laser meets the corresponding opening requirements.

[0036] In one example, the laser is a laser with a diamond-shaped spot.

[0037] The current laser film opening process mostly uses a circular or square spot laser. When etching the dielectric layer, a rectangle with smooth sides is formed on the surface of the dielectric layer by increasing a certain overlap rate. This rectangle provides a location for the growth of the metal grid line. The contact area between the metal grid line and the dielectric layer on the side is small, and the grid line pull-off force is poor. It should be noted that although the film opening formed by the circular spot laser is not a standard long hair shape, it is closer to a rectangle and its edges are smooth. In fact, the pull-off force of the grid line formed subsequently is also poor.

[0038] Specifically, refer to Figure 2 As shown, in the conventional laser film opening method, a circular spot or a square spot laser is often used ( Figure 2 Left), the final film opening area formed by the laser is as follows Figure 2 As shown, it is a relatively regular rectangular area ( Figure 2Right). After laser etching, the shape of the opened film area is the same as the gate line formed in the opened film area. After the subsequent gate line preparation is completed, the gate line and the dielectric layer in contact with it are basically in planar contact. In this case, since the gate line area is relatively smooth after laser etching, on the one hand, the contact area between the metal gate line and the bottom conductive area is small, and on the other hand, the contact area between the metal gate line and the dielectric layer on the side is also relatively small, which results in poor pull-off force of the metal gate line, affecting the quality of the battery. This embodiment method uses a diamond spot laser, reference Figure 3 As shown, Figure 3 The left side is the laser spot, and the right side is the film-opening area etched by the laser of the spot. Since the laser uses a diamond spot, the film-opening area formed by the laser film-opening has a curved structure or a bent structure on its side. It should be noted that the movement of the laser during the film-opening process is not continuous along the dielectric layer, but the overlap of each laser spot to form the dielectric layer structure after the film is opened. Based on the structure after the film is opened, when the subsequent gate line is prepared and contacts the dielectric layer, the contact area between the gate line and the dielectric layer is greatly increased compared to when the plane is in contact, thereby increasing the gate line pull-off force.

[0039] It can be seen that the method of this embodiment uses a diamond-shaped spot laser to etch the dielectric layer of the gate line workpiece. During the laser etching process, more contact area can be exposed on the dielectric layer, so that in the subsequent electroplating process of the metal gate line, the contact between the metal gate line and the side dielectric layer can be increased, thereby improving the pull-off force of the gate line.

[0040] In one example, the method of this embodiment further includes: before laser film opening, adjusting the laser head position to the initial position, setting the laser spot size and spot shape. This step can ensure that the laser irradiation can accurately cover the predetermined etching area, avoiding damage to other areas of the gate line to be processed.

[0041] In one example, the method of this embodiment may further include: performing quality inspection on the surface of the gate line workpiece after the first film opening to obtain the film opening quality of the gate line workpiece; if the film opening quality does not meet the preset requirements, performing additional film opening on the film opening area.

[0042] As mentioned above, the method of this embodiment can adopt one-time forming film opening, and the one-time forming film opening can naturally reduce the process steps of laser film opening. On the other hand, the one-time forming film opening method needs to have higher requirements for laser performance. When the laser has performance fluctuations during the film opening process or the laser's own performance is not enough to form a film opening area that meets the requirements of the grid line shape at one time, in this case, the one-time forming film opening may have a situation where the film opening area does not meet the actual requirements. Based on this, the method of this embodiment can detect the film opening area after the one-time forming film opening, and perform quality inspection on the surface of the grid line to be processed after the first film opening, and judge whether the film opening quality of the film opening area can meet the requirements through inspection. If the film opening quality meets the requirements after the inspection, there is no need to do further etching treatment, but if the film opening quality does not meet the preset requirements, it is necessary to supplement the film opening area. The supplementary film opening can be opened again in the manner of the first film opening, so that the film opening area meets the preset requirements. Of course, a separate laser etching process can also be performed on a specific area that does not meet the requirements of the grid line preparation, so that the film opening area finally formed meets the requirements of the grid line preparation.

[0043] Exemplarily, the surface of the dielectric layer after laser etching is quality inspected to evaluate the etching quality of the film opening area, mark the area that needs to be laser etched again, and generate a marking area. If the etching quality is poor or uneven, the area is laser etched again to ensure that the final film opening area meets the requirements of gate line preparation. During the laser etching process, the laser spot is driven to move along the etching path in the marking area to perform local secondary sintering of the marking area. This local sintering helps to improve or enhance the film opening area of ​​the photovoltaic cell, so that the prepared gate line has better conductivity continuity and lower contact resistance.

[0044] The method for preparing a battery grid line in this embodiment, when preparing the grid line, first obtain the grid line workpiece, which is a semi-finished photovoltaic cell containing a dielectric layer before electroplating the grid line, and then use a laser to open the film on the grid line workpiece, the laser is configured to form an opening area on the grid line workpiece, and the dielectric layer on the side of the opening area has a curved surface or a bent surface in contact with the grid line, wherein the laser is used to open the film of the grid line workpiece for one-time molding, and finally the laser-treated grid line workpiece is electroplated to form a battery grid line in the opening area, thereby improving the grid line pull-off force, and the photovoltaic cell structure is more stable and the performance is better.

[0045] Another embodiment of the present invention provides a method for preparing a battery grid line, comprising: S110, obtaining a grid line workpiece, wherein the grid line workpiece is a semi-finished photovoltaic cell containing a dielectric layer before electroplating the grid line; S120, using a laser to open a film on the grid line workpiece, wherein the laser is configured to form an open film area on the grid line workpiece, and the dielectric layer on the side of the open film area has a curved surface or a bent surface in contact with the grid line; wherein the laser is used to perform multiple molding and opening of the grid line workpiece, and the multiple molding and opening of the film is performed by complementing and cooperating with each other in the open film areas formed by the laser each time to form a desired grid line shape; S130, electroplating the laser-treated grid line workpiece to form the battery grid line in the open film area.

[0046] In this embodiment, since the requirements of laser performance and process control for one-time film forming are relatively high, multiple film forming can also be used in another implementation. Of course, the process of this multiple film forming method is slightly more complicated, but this film forming method does not have such high requirements for laser performance and is an optional solution.

[0047] In one example, multiple molding and film opening is two molding and film opening, wherein the first molding and film opening uses a square spot or a circular spot laser to form a grid line body, and the second molding and film opening forms a grid line sub-body on the side of the grid line body, and the grid line sub-body is a protruding structure formed on the side of the grid line body.

[0048] In the present embodiment, generally, two laser film openings can basically meet the preset film opening quality requirements. In practice, it is rarely necessary to perform laser film opening on the grid line workpiece three times or more, and three or more laser film openings will greatly increase the preparation process, which makes the film opening process less cost-effective. In the present embodiment, the film opening can be divided into two times, wherein the control requirements of the laser for the first film opening do not need to be so high, and the laser of the square spot or the circular spot can be used to form the grid line body for the first film opening. The second film opening is performed on the basis of the first film opening to assist the film opening, fill the more refined requirements that cannot be achieved by the first film opening, so as to form the grid line sub-body. Since the grid line sub-body is a protruding structure formed on the side of the grid line body. Therefore, a dielectric layer on the side of the film opening area can also be formed by superposition of the first-time film opening and the secondary film opening, and the dielectric dynamometer has a curved surface or a bending surface in contact with the grid line, which increases the contact area with the subsequent prepared grid line and improves the pull-off force between the dielectric layer.

[0049] In one example, the gate line body is a rectangular structure, the gate line sub-body is a triangular structure, one side of the triangular structure is in contact with the rectangular structure, and the vertex of the triangular structure faces the dielectric layer.

[0050] Still refer to Figure 3As shown, the inner area A indicated by the dotted line in the figure is the main structure of the grid line, which is a rectangular structure, and the outer area B of the dotted line in the figure is the grid line auxiliary body, which is a triangular structure. By combining the rectangular structure and the triangular structure, a dielectric layer with a side of the film opening area can also be prepared, and the dielectric layer has a curved surface or a bent surface in contact with the grid line. Although the secondary molding film opening method is more complicated than the primary molding process, it has lower requirements on laser performance and wider applicability.

[0051] In the method for preparing a battery grid line of the present embodiment, when preparing the grid line, firstly, a grid line workpiece is obtained, which is a semi-finished product of a photovoltaic cell containing a dielectric layer before the grid line is electroplated, and then a laser is used to open the film of the grid line workpiece, and the laser is configured to form an opening film area on the grid line workpiece, and the dielectric layer on the side of the opening film area has a curved surface or a bent surface in contact with the grid line, wherein the laser is used to perform multiple molding and opening films on the grid line workpiece, and the multiple molding and opening films are formed by the opening film areas formed by the laser each time complementing each other to form the required grid line shape, and finally the laser-treated grid line workpiece is electroplated to form a battery grid line in the opening film area, thereby improving the grid line pull-off force and making the photovoltaic cell structure more stable.

[0052] Another embodiment of the present invention provides a method for preparing a photovoltaic cell, which mainly includes: preparing a grid line workpiece, which is a semi-finished photovoltaic cell containing a dielectric layer before electroplating the grid line; preparing the grid line on the surface of the grid line workpiece, and the grid line can be prepared by the battery grid line preparation method in the above embodiment. The battery preparation method of this embodiment can prepare a dielectric layer on the side of the film opening area, and the dielectric layer has a curved surface or a bent surface in contact with the grid line, and then electroplating the grid line workpiece after laser treatment to form a battery grid line in the film opening area, thereby improving the grid line pull-off force and making the photovoltaic cell structure more stable.

[0053] Another embodiment of the present invention provides a photovoltaic cell, referring to Figure 4 As shown, it includes a substrate 410, a doped conductive layer 420 on the substrate 410, a dielectric layer 430 on the doped conductive layer 420, and a gate line 440, wherein the gate line 440 is embedded in the dielectric layer 430 and contacts the doped conductive layer 420, and the contact surface between the gate line 440 and the dielectric layer 430 is a curved surface or a bent surface.

[0054] In one example, the grid line 440 of the photovoltaic cell is prepared by using the cell grid line preparation method of the above-mentioned embodiment.

[0055] In this embodiment, the dielectric layer 430 on the side of the grid line 440 of the photovoltaic cell is in contact with each other, and the contact surface is a curved surface or a bent surface, which increases the grid line pull-off force and makes the photovoltaic cell structure more stable.

[0056] The basic concepts have been described above. Obviously, for those skilled in the art, the above invention disclosure is only used as an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.

[0057] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0058] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0059] Although the present application has been described with reference to the current specific embodiments, ordinary technicians in this technical field should recognize that the above embodiments are only used to illustrate the present application, and various equivalent changes or substitutions may be made without departing from the spirit of the present application. Therefore, as long as the changes and modifications to the above embodiments are within the essential spirit of the present application, they will fall within the scope of the claims of the present application.

Claims

1. A method for preparing a battery grid line, characterized in that: include: Obtaining a grid line workpiece, wherein the grid line workpiece is a semi-finished photovoltaic cell containing a dielectric layer before electroplating the grid line; The gate line workpiece is opened by laser, wherein the laser is configured to form an opening area on the gate line workpiece, and the dielectric layer on the side of the opening area has a curved surface or a bent surface in contact with the gate line; The laser-processed grid line workpiece is electroplated to form the battery grid line in the film-opening area.

2. The method for preparing a battery grid line according to claim 1, characterized in that: The step of using laser to open the film of the grid line workpiece includes: using laser to open the film of the grid line workpiece once, wherein the once-opening film means forming the required grid line shape by opening the film for the first time.

3. The method for preparing a battery grid line according to claim 2, characterized in that: The laser is a laser with a diamond-shaped spot.

4. The method for preparing a battery grid line according to claim 3, characterized in that: Also includes: Before opening the film, the working head position of the laser is adjusted to the initial position, and the spot size and spot shape of the laser are set.

5. The method for preparing a battery grid line according to claim 2, characterized in that: Also includes: Performing a quality inspection on the surface of the grid line workpiece after the first film opening to obtain the film opening quality of the grid line workpiece; If the film opening quality does not meet the preset requirements, additional film opening is performed on the film opening area.

6. The method for preparing a battery grid line according to claim 1, characterized in that: Using laser to open the film of the grid line workpiece includes: using laser to perform multiple forming and opening of the film on the grid line workpiece, wherein the multiple forming and opening of the film is that the opening areas formed by laser each time complement each other to form the required grid line shape.

7. The method for preparing a battery grid line according to claim 6, characterized in that: The multiple molding and film opening is a two-time molding and film opening, wherein the first film opening uses a square spot or a circular spot laser to form a grid line body, and the second film opening forms a grid line sub-body on the side of the grid line body, and the grid line sub-body is a protruding structure formed on the side of the grid line body.

8. The method for preparing a battery grid line according to claim 7, characterized in that: The gate line main body is a rectangular structure, the gate line auxiliary body is a triangular structure, one side of the triangular structure is in contact with the rectangular parallelepiped structure, and the vertex of the triangular structure faces the dielectric layer.

9. A method for preparing a photovoltaic cell, characterized in that: include: A gate line workpiece is prepared, wherein the gate line workpiece is a semi-finished photovoltaic cell containing a dielectric layer before electroplating the gate line; a gate line is prepared on the surface of the gate line workpiece, wherein the gate line is prepared by the battery gate line preparation method according to any one of claims 1 to 8.

10. A photovoltaic cell, characterized in that: include: A substrate, a doped conductive layer on the substrate, a dielectric layer on the doped conductive layer, and a gate line, wherein the gate line is embedded in the dielectric layer and contacts the doped conductive layer, and the contact surface between the gate line and the dielectric layer is a curved surface or a bent surface.

11. The photovoltaic cell according to claim 10, characterized in that: The grid line is prepared by the battery grid line preparation method according to any one of claims 1 to 8.