Substrate for solar cell and solar cell

Abstract

The invention relates to a substrate for a solar cell and a solar cell. The solar cell comprises: a substrate having a conductor polarity; the first thin film layer is formed on the substrate, a substrate dividing part is formed on one surface of the substrate, the substrate dividing part is used for dividing the substrate into a plurality of unit cells, and the substrate dividing part is formed in the mode that the size of the substrate dividing part is gradually reduced in the downward direction, and the size of the substrate dividing part is gradually reduced in the downward direction. And the first thin film layer comprises a first dividing piece inserted into the substrate dividing part.

Description

[0001] This application is a divisional application of the invention patent application with the application date of April 7, 2020, application number 202080027292.1, and invention name “Substrate for solar cells, solar cells and method for manufacturing solar cells”. Technical Field

[0002] The present invention relates to a solar cell, and more particularly to a solar cell combining a wafer-type solar cell and a thin-film-type solar cell. Background Art

[0003] Solar cells are devices that convert light energy into electrical energy based on the properties of semiconductors.

[0004] Solar cells have a PN junction structure, combining a positive-type (P-type) semiconductor and a negative-type (N-type) semiconductor. When sunlight strikes a solar cell with a PN junction structure, the energy from the incident sunlight generates holes and electrons within the semiconductors. The electric field generated at the PN junction causes the holes (+) to move to the P-type semiconductor and the electrons (-) to move to the N-type semiconductor, creating a potential that generates electricity.

[0005] Solar cells can be classified into thin film type solar cells and wafer type solar cells.

[0006] The wafer type solar cell is a solar cell manufactured by using a semiconductor material such as a silicon wafer as a substrate, and the thin film type solar cell is a solar cell manufactured by forming a thin film type semiconductor on a substrate such as glass.

[0007] Wafer-type solar cells have a higher efficiency than thin-film-type solar cells, but thin-film-type solar cells have an advantage of lower manufacturing costs compared to wafer-type solar cells.

[0008] Therefore, a solar cell combining a wafer type solar cell and a thin film type solar cell has been proposed. Hereinafter, a known solar cell will be described with reference to the accompanying drawings.

[0009] Figures 1a to 1c A schematic side view illustrating a process of a known method for manufacturing a solar cell.

[0010] First, if Figure 1a As shown, a substrate 100 is prepared. Here, the substrate 100 can be selected from one of a silicon wafer and glass.

[0011] Then, if Figure 1bAs shown, a battery manufacturing process is performed by forming a plurality of thin film layers 200 on a substrate 100. Each thin film layer 200 can be a layer selected from a semiconductor layer and a conductor layer.

[0012] Then, if Figure 1c As shown, a dividing portion 300 is formed to divide the battery formed with multiple thin film layers 200 into unit cells. The dividing portion 300 can be formed by a scribing process using a laser. The scribing process can be performed by a scribing device 300a that irradiates a laser beam onto the battery.

[0013] Here, a conventional method for manufacturing a solar cell is to form a plurality of thin film layers on a substrate 100 and then perform a scribing process. Therefore, the conventional method for manufacturing a solar cell has the following problems.

[0014] First, conventional solar cell manufacturing methods cause multiple thin film layers 200 to bond together at locations illuminated by laser scribing. Consequently, layer shorting can occur in conventional solar cell manufacturing methods. This can hinder the movement of holes (+) and electrons (-) between the multiple thin film layers 200, thereby reducing the amount of power the solar cell can generate.

[0015] Second, the conventional method of manufacturing solar cells causes particles 400 and cracks 500 to form in the cells due to the scribing process. Therefore, the conventional method of manufacturing solar cells has a problem in that the quality of the finished solar cell is degraded due to the particles 400 and cracks 500. Summary of the Invention

[0016]

Technical Issues

[0017] The present invention is designed to solve the above-mentioned problems and relates to a solar cell and a method for manufacturing the solar cell, which can reduce the possibility of the interlayer short circuit phenomenon.

[0018] The present invention relates to a solar cell and a method for manufacturing the solar cell, which can reduce the degree of quality degradation of the finished solar cell product caused by particles and cracks formed on a substrate.

[0019]

Technical means

[0020] The present invention may include the following elements to solve the above technical problems.

[0021] According to the present invention, a method for manufacturing a solar cell includes a dividing portion formed in the solar cell. The dividing portion is used to divide a substrate used to manufacture the solar cell into a plurality of blocks. The method may include: a substrate preparation process; a first substrate etching process to form a first groove on a surface of the substrate; a second substrate etching process to form a second groove within the first groove; and a third substrate etching process to etch the substrate including the second groove. The dividing portion may include the first groove and the second groove.

[0022] According to the present invention, the method for manufacturing a solar cell may include: a process for preparing a substrate, in which a substrate dividing portion is formed, the substrate dividing portion includes a first groove and a second groove, the first groove is formed on a surface of the substrate in a first direction, and the second groove is formed in the first direction in the first groove; and a process for forming a thin film on the substrate having the substrate dividing portion formed therein.

[0023] The method for manufacturing a solar cell according to the present invention may include: a substrate preparation process, in which a substrate is prepared, and a plurality of linear grooves are formed on the top surface of the substrate; a process for forming solar cell cells on the substrate; and a separation process, in which the substrate is separated along the linear grooves. Each linear groove may serve as a substrate separation portion for separating the substrate into a plurality of blocks.

[0024] According to the present invention, the method for manufacturing solar cells may include: a substrate preparation process, preparing a substrate, a plurality of linear groove portions are formed on the top surface of the substrate, and cells of the solar cell are formed on the substrate; a coating process, coating a conductive material around each linear groove portion; and a cutting process, dividing the substrate along one of the linear groove portions.

[0025] According to the method of manufacturing solar cells of the present invention, the method may include: a cell installation process, installing a cell in a processing space for manufacturing solar cells, wherein a plurality of thin films are formed on a substrate, and a substrate dividing portion is formed in the substrate; a coating process, coating a conductive material on the cell; a cutting process, dividing the cell into a plurality of unit cells; and a bonding process, bonding the divided unit cells.

[0026] A solar cell according to the present invention may include: a substrate having a conductive polarity; and a first thin film layer formed on the substrate. The substrate may include a substrate dividing portion formed on a surface of the substrate before the first thin film layer is formed, the substrate dividing portion having a dimension that gradually decreases downward. The first thin film layer may include a first dividing piece inserted into the substrate dividing portion.

[0027] The solar cell according to the present invention may include: a plurality of unit cells, each comprising a plurality of thin film layers formed on a substrate. Each unit cell may include: a cell top surface disposed upward; a cell cross-sectional groove formed in the cell top surface; a first cross-sectional area disposed facing the cell cross-sectional groove; and a second cross-sectional area connecting each first cross-sectional area to the cell top surface. The angle between the first cross-sectional area and the second cross-sectional area may be less than or equal to 180 degrees.

[0028] According to the present invention, a substrate for a solar cell may include: a substrate body having a conductive polarity; a first groove formed in the substrate body; a second groove connected to the first groove to expand the etched surface facing the first groove; and an anti-damage portion formed in a stepped shape relative to the etched surface and having the second groove, the second groove being arranged inward from the anti-damage portion.

[0029] The solar cell according to the present invention may include: a substrate having a conductor polarity; and a first thin film layer formed on the substrate, wherein a substrate dividing portion is formed on a surface of the substrate, the substrate dividing portion is used to divide the substrate into a plurality of unit cells, the substrate dividing portion is formed so that the size of the substrate dividing portion gradually decreases in a downward direction, and the first thin film layer includes a first dividing piece inserted into the substrate dividing portion.

[0030]

Beneficial effects

[0031] According to the present invention, the following effects can be obtained.

[0032] Implementation of the present invention can reduce the likelihood of interlayer short circuits occurring, thereby increasing the amount of power generated.

[0033] The implementation of the present invention can remove particles and cracks from the solar cell, thereby improving the quality of the finished solar cell product. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figures 1a to 1c The figure is a schematic side view illustrating a conventional method for manufacturing a solar cell.

[0035] Figure 2 FIG. 1 is a schematic flow chart of a method for manufacturing a solar cell according to the present invention.

[0036] Figure 3a The figure is a front cross-sectional schematic diagram illustrating a substrate mounting process in a method for manufacturing a solar cell according to the present invention.

[0037] Figure 3b The figure is a front cross-sectional schematic diagram illustrating a first substrate etching process in the method for manufacturing a solar cell according to the present invention.

[0038] Figure 3cThe present invention is a front cross-sectional schematic diagram illustrating a process of manufacturing a solar cell according to an embodiment of the present invention. In this embodiment, particles and cracks are formed in the cell due to a first substrate etching process.

[0039] Figure 3d The present invention is a front cross-sectional schematic diagram illustrating a third substrate etching process performed on a substrate in the method for manufacturing a solar cell according to the present invention.

[0040] Figure 3e The present invention is a front cross-sectional schematic diagram illustrating a process of manufacturing a solar cell according to an embodiment of the present invention. In this embodiment, a first thin film layer forming process is performed on a substrate.

[0041] Figure 3f To illustrate a front cross-sectional schematic diagram of a process in a method for manufacturing a solar cell according to an embodiment of the present invention, a second thin film layer forming process is performed on a first thin film layer in this embodiment.

[0042] Figure 3g To illustrate a front cross-sectional view of a process in an embodiment of a method for manufacturing a solar cell according to the present invention, a third thin film layer forming process is performed on the second thin film layer in this embodiment.

[0043] Figure 4 for Figure 3d Magnified view of part A in FIG.

[0044] Figure 5a Schematic perspective view of a substrate for a solar cell according to the present invention.

[0045] Figure 5b FIG. 1 is a schematic front view of a substrate for a solar cell according to the present invention.

[0046] Figure 5c for Figure 5b A schematic side cross-sectional view along line II is shown in FIG.

[0047] Figure 5d The figure is a schematic perspective view illustrating a cross section of a substrate for a solar cell according to the present invention.

[0048] Figure 6a and Figure 6b The front cross-sectional view is a schematic diagram illustrating an embodiment of a solar cell according to the present invention. In this embodiment, a plurality of thin film layers are formed on a substrate.

[0049] Figure 7a The figure is a schematic side view illustrating a coating process in the method for manufacturing a solar cell according to the present invention.

[0050] Figure 7bThe figure is a schematic side view illustrating a cutting process in the method for manufacturing a solar cell according to the present invention.

[0051] Figure 7c The present invention is a side view schematic diagram illustrating the bonding process and the curing process performed on a solar cell in the method for manufacturing a solar cell according to the present invention.

[0052] Figure 8 for Figure 7c Magnified view of part B in FIG. DETAILED DESCRIPTION

[0053] Those skilled in the art will fully appreciate that the features of the various embodiments of the present invention may be combined or combined with each other in part or in whole, and may interoperate with each other in various ways or be driven by technology. The embodiments of the present invention may be implemented independently of each other, or may be implemented together in a mutually dependent relationship. When describing positional relationships, for example, unless "just" or "directly" is used, when the positional relationship between two components is described as "on ~", "above ~", "below ~" and "adjacent to ~", one or more other components may be arranged between the two components. When describing temporal relationships, for example, unless "just" or "directly" is used, when the temporal sequence is described as "after ~", "subsequently ~", "followed ~" and "before ~", discontinuous situations may be included.

[0054] Hereinafter, an embodiment of a method for manufacturing a solar cell according to the present invention will be described in detail with reference to the accompanying drawings.

[0055] The method for manufacturing a solar cell according to the present invention is used to manufacture a solar cell that converts sunlight energy into electrical energy. The method for manufacturing a solar cell according to the present invention can be used to manufacture both wafer-type solar cells and thin-film solar cells. The method for manufacturing a solar cell according to the present invention can be used to form a dividing portion for dividing a substrate used to manufacture a solar cell into a plurality of sections. The following describes an embodiment of manufacturing a wafer-type solar cell using the method according to the present invention. However, it will be apparent to those skilled in the art that the method can also be used to manufacture thin-film solar cells.

[0056] Please refer to Figure 2 and Figure 3a , the method for manufacturing a solar cell according to the present invention may include a substrate mounting process S100 .

[0057] The substrate installation process S100 may be a process for installing the substrate 2 in a processing space used to manufacture solar cells. In other words, the substrate installation process S100 may be a process for preparing the substrate 2 for manufacturing solar cells. The substrate installation process S100 may be performed by a substrate loading device (not shown), which loads the substrate 2 into the processing space. The processing space may internally accommodate the manufacturing equipment (not shown) required for manufacturing solar cells, and the processing space may be implemented as a cavity as a whole. The substrate 2 can allow multiple thin film layers to be stacked thereon, and the substrate 2 may have a specific conductor polarity. The substrate 2 may be formed from a silicon wafer. For example, the substrate 2 may be formed from an N-type silicon wafer or a P-type silicon wafer. Although not shown, one surface 2a of the substrate 2 may have a concave-convex structure. The substrate 2 may include a top surface, a bottom surface, and side surfaces. The top surface of the substrate 2 is installed in the processing space and is positioned in an upward direction. The bottom surface of the substrate 2 is positioned in a downward direction opposite to the upward direction. The side surfaces of the substrate 2 connect the top and bottom surfaces of the substrate 2. In this case, one surface 2a of the substrate 2 may correspond to one of the top surface, the bottom surface, and the side surface of the substrate 2. For example, when the one surface 2a of the substrate 2 corresponds to the top surface of the substrate 2, the other surface 2b of the substrate 2 may correspond to the bottom surface of the substrate 2. In this case, each thin film layer formed on the one surface 2a and the other surface 2b of the substrate 2 may be formed into a concave-convex structure.

[0058] Please refer to Figure 2 and Figure 3b , the method for manufacturing a solar cell according to the present invention may include a first substrate etching process S200 .

[0059] The first substrate etching process S200 may be a process for forming a first groove 2c in the substrate 2 (shown in FIG. Figure 3b For example, the first substrate etching process S200 may be a scribing process of irradiating a laser onto the substrate 2. When the first substrate etching process S200 is a scribing process using a laser, the first substrate etching process S200 may be performed by a scribing device 1a. Figure 3b The arrows shown as a single-dot dashed line schematically represent the laser light emitted by the scribing device 1a. In this specification, the first substrate etching process S200 is described as being performed on one surface 2a of the substrate 2. However, this is merely an example, and the first substrate etching process S200 may also be performed on the other surface 2b of the substrate 2.

[0060] In the following, the first substrate etching process S200 is described as being implemented as a scribing process, but this is only an example. The first substrate etching process S200 can also be performed by the following methods: a process of digesting the substrate 2 in an etching tank (not shown) to form a first groove 2c, a dry etching process, or a process using a mask.

[0061] The first substrate etching process S200 can be performed by irradiating the substrate 2 with a laser. The first substrate etching process S200 can be performed by irradiating one surface 2a of the substrate 2 with a laser. Therefore, the first groove 2c can be formed by removing a specific area of ​​the substrate 2. The first groove 2c formed by the first substrate etching process S200 can be a groove recessed to a specific depth from the one surface 2a of the substrate 2. The first groove 2c can be formed in a first direction from the one surface 2a of the substrate 2. The first direction can be a direction from the one surface 2a of the substrate 2 to the other surface 2b of the substrate 2. The first groove 2c can be formed to extend from one side of the one surface 2a of the substrate 2 to the other side of the one surface 2a of the substrate 2. Figure 3b This schematically illustrates an embodiment in which a first groove 2c is formed in a substrate 2. If multiple first grooves 2c are desired to be formed in the substrate 2, the first substrate etching process S200 can be performed by multiple substrate scribing devices 1a. Therefore, the method for manufacturing a solar cell of the present invention can reduce the time required for the first substrate etching process S200. If multiple first grooves 2c are desired to be formed in the substrate 2, the first substrate etching process S200 can be performed by moving a single substrate scribing device 1a.

[0062] As the first substrate etching process S200 proceeds, the first groove 2c may be formed to have a first depth from one surface 2a of the substrate 2. The first depth may be a dimension of the first groove 2c relative to a separation direction, which is a direction in which the one surface 2a of the substrate 2 is separated from the other surface 2b of the substrate 2. As the first substrate etching process S200 proceeds, the first groove 2c may be formed to have a first length. The first length may be a dimension of the first groove 2c relative to the first direction. The first length and the first depth may have the same value.

[0063] The first substrate etching process ( S200 ) can be performed before the first thin film layer 3 is formed on the substrate 2. Therefore, compared to conventional techniques that irradiate the substrate 2 with laser light after one or more thin film layers are formed on the substrate 2, the method for manufacturing a solar cell according to the present invention can provide a preventive force against interlayer short circuits caused by the bonding thin film layers. Consequently, the method for manufacturing a solar cell according to the present invention can achieve the effect of increasing the power that the solar cell can generate.

[0064] Please refer to Figure 2 and Figures 5a to 5d, the method for manufacturing a solar cell according to the present invention may include a second substrate etching process S300 . Figure 5b and Figure 5c The points shown in the figure are not for explaining the cross section of the structure, but for explaining the segmented structure. Figure 5a 、 Figure 5c and Figure 5d The two dotted lines shown in FIG. 5 are used to omit the length of the substrate 2 relative to the scribing direction in which the first groove 2 c is formed.

[0065] The second substrate etching process S300 is a process for forming the second groove 2d in order to enlarge the etching surface 2e facing the first groove 2c. The second substrate etching process S300 can be a process for forming the second groove 2d in the first groove 2c. That is, as the second substrate etching process S300 is performed, the second groove 2d can be connected to the first groove 2c. The etching surface 2e can be formed by performing the process of forming the first groove 2c. The second substrate etching process S300 can be performed after the first groove 2c is formed. The second substrate etching process S300 can be performed by irradiating the substrate 2 with a laser. The second substrate etching process S300 can be performed by etching a portion of the substrate facing the first groove 2c. Both the process of forming the first groove 2c and the second substrate etching process S300 can be performed by a scribing device 1a using a laser.

[0066] In the method for manufacturing a solar cell according to the present invention, as the second substrate etching process S300 is performed, the etching surface 2e may be expanded via the second groove 2d. The etching surface 2e may have a quality better than that of the substrate cross section 2g (eg Figure 5c and 5d ), wherein the substrate cross section 2g is formed by dividing the substrate 2 into two or more blocks. Therefore, the method for manufacturing a solar cell according to the present invention can improve the overall quality of the finished solar cell product.

[0067] As the second substrate etching process S300 proceeds, the second groove 2d may be formed to have a second depth from one surface 2a of the substrate 2. The second depth may be the sum of the dimensions of the first groove 2c and the dimensions of the second groove 2d relative to the separation direction. The second depth may be formed to be greater than the first depth. As the second substrate etching process S300 proceeds, the second groove 2d may be formed to have a second length. The second length may be the dimension of the second groove 2d relative to the first direction. The second length may be formed to be less than the first length.

[0068] As the second substrate etching process S300 proceeds, the anti-damage portion 2f may be formed to have a step height relative to the etching surface 2e. As the second groove 2d is formed, the anti-damage portion 2f may be formed. The anti-damage portion 2f may provide support to the substrate 2 to prevent damage, for example, when the substrate 2 is divided into two or more blocks. Therefore, even in the process of transporting the substrate 2, when a physical impact such as a collision occurs between the processing device installed in the processing space and the substrate 2, the method for manufacturing a solar cell according to the present invention can still reduce the possibility of damage to the substrate 2. Accordingly, the method for manufacturing a solar cell according to the present invention can improve the processing stability of manufacturing solar cells.

[0069] Please refer to Figure 2 and Figures 3c to 3g , the method for manufacturing a solar cell according to the present invention may include a third substrate etching process S400 .

[0070] The third substrate etching process S400 is a process for etching one surface 2a of the substrate 2. The third substrate etching process S400 can be performed by etching the one surface 2a of the substrate 2 including the second groove 2d to a specific thickness. The third substrate etching process S400 can be performed by an etching device (not shown) that etches the one surface 2a of the substrate 2. The third substrate etching process S400 can be performed after the first substrate etching process S200. In this specification, the third substrate etching process S400 is described as being performed on one surface 2a of the substrate 2, but this is merely an example. The third substrate etching process S400 can also be performed on the other surface 2b of the substrate 2, or on both the one surface 2a of the substrate 2 and the other surface 2b of the substrate 2 at the same time.

[0071] The etching device performing the third substrate etching process S400 can use a wet etching process to etch one surface 2a of the substrate 2. The wet etching process can be performed by spraying a specific etchant onto the substrate 2 using a nozzle (not shown). When the specific etchant is sprayed onto the substrate 2 using a nozzle (not shown), the third substrate etching process S400 can be performed continuously by transporting the substrate 2 to a transport roller (not shown). The etchant can include at least one etching material selected from the group consisting of sodium hydroxide (NaOH), potassium hydroxide (KOH), hydrochloric acid (HCl), nitric acid (HNO3), sulfuric acid (H2SO4), phosphorous acid (H3PO3), hydrogen peroxide (H2O2), and oxalic acid (C2H2O4). The wet etching process can be performed by storing the etchant in an etching tank and dissolving the substrate 2 in the etchant.

[0072] In the case where the third substrate etching process S400 is performed as a process of dissolving the substrate 2 in an etchant, the third substrate etching process S400 may be a process of moving the etchant along the scribing direction where the first groove 2c is formed. Therefore, the method for manufacturing a solar cell according to the present invention can also achieve the thickness L3 of the first groove 2c (such as Figure 5b and Figure 5c As shown) for the thickness of the substrate 2 (as Figure 5b and Figure 5c The value of the thickness L3 of the first groove 2c may be the same as the values ​​of the first depth and the first length.

[0073] Please refer to Figure 3c and Figure 3d The third substrate etching process S400 may include removing particles 210 (eg, Figure 3c The particle removal process can be performed by etching one surface 2a of the substrate 2. Therefore, implementing the method for manufacturing a solar cell according to the present invention can remove particles 210 from the cell, thereby improving the quality of the solar cell.

[0074] Please refer to Figure 3c and Figure 3d , the third substrate etching process S400 may include a process for forming a substrate dividing portion. The process for forming the substrate dividing portion may be performed by etching one surface 2a of the substrate 2 facing the first groove 2c. Therefore, the method for manufacturing a solar cell according to the present invention may remove the crack 220 (such as the crack 220 formed on one surface 2a of the substrate 2 facing the first groove 2c). Figure 3c As shown). Accordingly, the method for manufacturing a solar cell according to the present invention can improve the quality of the finished solar cell product.

[0075] As the process of forming the substrate dividing portion proceeds, the substrate dividing portion 20 (eg Figure 3d The substrate dividing portion 20 is formed at the position where the first groove 2c is formed. The substrate dividing portion 20 is formed at the position where each of the first grooves 2c and the second grooves 2d is formed, so the substrate dividing portion 20 may include a first groove 2c and a second groove 2d. The substrate dividing portion 20 may be a dividing portion for dividing a substrate for manufacturing a solar cell into a plurality of blocks. The size of the substrate dividing portion 20 may be larger than the size of each of the first grooves 2c and the second grooves 2d. The substrate dividing portion 20 may be formed so that its size gradually decreases in a downward direction. For example, the substrate dividing portion 20 may be formed to have a pointed shape that gradually becomes sharper in a downward direction. The substrate 2 may be divided into a plurality of blocks via the substrate dividing portion 20 formed by the third substrate etching process S400. The substrate dividing portion 20 may be implemented as a groove that is recessed as a whole to a specific depth from one surface 2a of the substrate 2.

[0076] There is no particular order in which the process of forming the substrate dividing portion and the process of removing particles are performed. That is, the process of forming the substrate dividing portion can be performed before the process of removing particles, or the process of forming the substrate dividing portion and the process of removing particles can be performed simultaneously.

[0077] Please refer to Figure 3d , the process of forming the substrate dividing portion may include a process of forming a first dividing surface.

[0078] The process of forming the first dividing surface is a process of forming the first dividing surface 21 facing the substrate dividing portion 20. The process of forming the first dividing surface can be performed as the etching device etches the one surface 2a of the substrate 2 facing the first groove 2c. As the process of forming the first dividing surface proceeds, the first dividing surface 21 can be formed to be inclined relative to the one surface 2a of the substrate 2.

[0079] Please refer to Figure 3d , the process of forming the substrate dividing portion may include a process of forming the second dividing surface.

[0080] The process of forming the second splitting surface is a process of forming the second splitting surface 22 connecting the first splitting surface 21. The second splitting surface 22 can be set to face the substrate splitting portion 20. The process of forming the second splitting surface can be carried out as the etching device etches a surface 2a of the substrate 2 facing the first groove 2c. As the process of forming the second splitting surface proceeds, the second splitting surface 22 can be formed to be inclined relative to a surface 2a of the substrate 2. As the process of forming the second splitting surface proceeds, the second splitting surface 22 and the first splitting surface 21 can be connected to each other to form a tip, and the tip gradually becomes sharp in the downward direction. In other words, the connection point CP where the second splitting surface 22 and the first splitting surface 21 connect can be formed with a corner. The connection point CP can be set to a first separation distance of approximately 46.8 microns (μm) separated from a surface 2a of the substrate 2 relative to the first axial direction. The first axial direction can be a direction parallel to the direction of laser irradiation and parallel to each upward direction and downward direction.

[0081] Please refer to Figure 3d , the process of forming the substrate dividing portion may include a process of forming the first connection surface.

[0082] The process of forming the first connecting surface is a process of forming a first connecting surface 23 connecting each first dividing surface 21 with the one surface 2a of the substrate 2. The first connecting surface 23 can be positioned to face the substrate dividing portion 20. The process of forming the first connecting surface 23 can be performed as the etching device etches the one surface 2a of the substrate 2 facing the first groove 2c. As the process of forming the first connecting surface progresses, the first connecting surface 23 can be positioned to be inclined relative to the one surface 2a of the substrate 2. For example, the angle between the first connecting surface 23 and the one surface 2a of the substrate 2 can be approximately 90 degrees.

[0083] As the process of forming the first connection surface proceeds, the angle θ1 (e.g. Figure 4 The angle (shown) may be less than or approximately equal to 180 degrees. As the process of forming the first connection surface progresses, a corner may be formed at the portion where the first connection surface 23 connects to the first dividing plane 21. The portion where the first connection surface 23 connects to the first dividing plane 21 may be set to a second separation distance of approximately 29.8 microns (μm) from the connection point CP relative to the first axial direction. In other words, the second separation distance may be formed to be shorter than the first separation distance.

[0084] Please refer to Figure 3d , the process of forming the substrate dividing portion may include a process of forming the second connection surface.

[0085] The process of forming the second connection surface is a process of forming a second connection surface 24 that connects each second dividing surface 22 and one surface 2a of the substrate 2. The second connection surface 24 can be set to face the substrate dividing portion 20. The process of forming the second connection surface 24 can be performed as the etching device etches the one surface 2a of the substrate 2 facing the first groove 2c. As the process of forming the second connection surface proceeds, the second connection surface 24 can be set to be inclined relative to the one surface 2a of the substrate 2. For example, the angle between the second connection surface 24 and the one surface 2a of the substrate 2 can be approximately 90 degrees. As the process of forming the second connection surface proceeds, the second connection surface 24 can be set to be parallel to the first connection surface 23. The second connection surface 24 can be set to a third separation distance of approximately 50.8 microns (μm) separated from the first connection surface 23 relative to the second axial direction, wherein the second axial direction is perpendicular to the first axial direction.

[0086] As the process of forming the second connection surface proceeds, the angle between the second connection surface 24 and the second dividing surface 22 may be less than or equal to 180 degrees. As the process of forming the second connection surface proceeds, the portion where the second connection surface 24 and the second dividing surface 22 connect may form a corner.

[0087] There is no particular order in which the processes of forming the second connecting surface, forming the first connecting surface, forming the second dividing surface, and forming the first dividing surface are performed. For example, the processes of forming the first dividing surface, forming the second dividing surface, forming the first connecting surface, and forming the second connecting surface can be performed sequentially. The processes of forming the first dividing surface, forming the second dividing surface, forming the first connecting surface, and forming the second connecting surface can also be performed simultaneously.

[0088] Hereinafter, one embodiment of a third substrate etching process S400 using a nozzle in the method of manufacturing a solar cell according to the present invention will be described with reference to the accompanying drawings.

[0089] First, if Figure 3a As shown, a substrate 2 is prepared.

[0090] Then, if Figure 3b As shown, a first substrate etching process S200 is performed in which a laser is irradiated on one surface 2a of the substrate 2. Thus, a first groove 2c can be formed on the substrate 2. In this case, as shown in FIG. Figure 3c As shown, particles 210 may be formed on one surface 2 a of the substrate 2 , and cracks 220 may be formed on one surface 2 a of the substrate 2 facing the first groove 2 c .

[0091] Subsequently, a third substrate etching process S400 is performed on one surface 2a of the substrate 2. As the third substrate etching process S400 is performed, the substrate 2 can be etched to a specific depth from the one surface 2a of the substrate 2, thereby removing the particles 210 formed on the one surface 2a of the substrate 2. Accordingly, the method for manufacturing a solar cell according to the present invention can reduce the possibility of interlayer short circuits between the thin film layers formed on the substrate 2.

[0092] Subsequently, a third substrate etching process ( S400 ) is performed until the first groove 2c is formed. As the third substrate etching process ( S400 ) is performed, the substrate dividing portion 20 is formed to be larger than the first groove 2c, thereby etching the surface 2a of the substrate 2 facing the first groove 2c. Thus, the method for manufacturing a solar cell according to the present invention can remove the crack 220.

[0093] Then, if Figure 3d As shown, the third substrate etching process S400 can be performed on the entire surface of one surface 2a of the substrate 2. Accordingly, in the method for manufacturing a solar cell according to the present invention, the third substrate etching process S400 can be completed.

[0094] Please refer to Figure 2 and Figure 3e , the method for manufacturing a solar cell according to the present invention may include a first thin film layer forming process S500 .

[0095] The first thin film layer forming process S500 forms the first thin film layer 3 on substrate 2. As the first thin film layer forming process S500 is performed, the first thin film layer 3 is deposited on one surface 2a of substrate 2. The first thin film layer forming process S500 can be performed on substrate 2 after the first substrate etching process S200 and the third substrate etching process S400. The first thin film layer formed by the first thin film layer forming process S500 can be a semiconductor layer, formed as a thin film on substrate 2. The first thin film layer 3 can form a PN junction along substrate 2. Therefore, when substrate 2 comprises an N-type silicon wafer, the first thin film layer 3 can be formed from a P-type semiconductor layer. The first thin film layer 3 can be formed using a chemical vapor deposition (CVD) process or other similar processes. The first thin film layer 3 can be formed into a PIN structure with a P-type semiconductor material, an I-type semiconductor material, and an N-type semiconductor material stacked in sequence. When the first thin film layer 3 is formed in this manner in a PIN structure, the P-type and N-type semiconductor materials deplete the I-type semiconductor material, generating an electric field therein. This causes holes and electrons generated by sunlight to drift due to the electric field and be collected in the P-type and N-type semiconductor materials, respectively. When the first thin film layer 3 is formed in a PIN structure, it is preferred that the P-type semiconductor material be formed in the first thin film layer 3, followed by the I-type and N-type semiconductor materials. Since the drift mobility of holes is generally lower than that of electrons, this is done to maximize the collection efficiency of incident light by forming the P-type semiconductor material close to the light-receiving surface. The method for manufacturing a solar cell according to the present invention can form the first thin film layer 3 in a stacked structure. For example, the method can form the first thin film layer 3 in a tandem (tandem (PIN / PIN)) or triple (triple (PIN / PIN / PIN)) stacked structure.

[0096] The first thin film layer forming process S500 may be performed on one surface 2a of the substrate 2. The first thin film layer forming process S500 may be performed on the other surface 2b of the substrate 2. For example, the first thin film layer forming process S500 may be to form an N-type semiconductor layer 3a (e.g., Figure 6a and Figure 6b and forming a P-type semiconductor layer 3b (as shown) on the other surface 2b of the substrate 2. Figure 6a and Figure 6bWhen the first thin film layer 3 is stacked on each of the one surface 2a and the other surface 2b of the substrate 2, the first thin film layer 3 can be formed using a plasma enhanced chemical vapor deposition (PECVD) process and a sputtering process. In this case, there is no particular order for the process of forming the first thin film layer 3 on the one surface 2a of the substrate 2 and the process of forming the first thin film layer 3 on the other surface 2b of the substrate 2.

[0097] Please refer to Figure 3e The first thin film layer forming process S500 may include a process of forming a first thin film dividing portion and a process of forming a first dividing member.

[0098] The process of forming the first thin film dividing portion is a process of forming the first thin film dividing portion 30 in the first thin film layer 3. The process of forming the first thin film dividing portion can be performed by etching one surface of the first thin film layer 3. As the process of forming the first thin film dividing portion is performed, the first thin film dividing portion 30 can be formed on one surface of the first thin film layer 3. The first thin film dividing portion 30 can be divided into a plurality of blocks by the first thin film dividing portion 30. The first thin film dividing portion 30 can be formed at a corresponding position of the substrate dividing portion 20. The first thin film dividing portion 30 can be a dividing portion for dividing a substrate for manufacturing a solar cell into a plurality of blocks. The first thin film dividing portion 30 can be a groove that is recessed to a specific depth from one surface of the first thin film layer 3 as a whole. The first thin film dividing portion 30 can have a size that gradually decreases in a downward direction.

[0099] The process of forming the first dividing piece is a process of forming the first dividing piece 31 to be inserted into the substrate dividing portion 20. The process of forming the first dividing piece can be performed by stacking the first thin film layer 3 on the substrate 2. As the process of forming the first dividing piece progresses, the first dividing piece 31 can be formed on the other surface of the first thin film layer 3. The first dividing piece 31 can be formed in a shape corresponding to the substrate dividing portion 20. For example, if the substrate dividing portion is formed in a shape whose size gradually narrows in the downward direction, the first dividing piece 31 can be formed in a shape whose size gradually narrows in the downward direction.

[0100] There is no particular order in which the first dividing member and the first thin film dividing portion are formed. For example, the first dividing member may be formed before the first thin film dividing portion, or the first dividing member and the first thin film dividing portion may be formed simultaneously.

[0101] Please refer to Figure 3f , the method for manufacturing a solar cell according to the present invention may include a second thin film layer forming process.

[0102] The second thin film layer forming process may be a process of forming the second thin film layer 4 on the first thin film layer 3. As the second thin film layer forming process is performed, the second thin film layer 4 may be stacked on one surface of the first thin film layer 3. The second thin film layer forming process may be performed after the first thin film layer forming process S500. The second thin film layer 4 formed by the second thin film layer forming process may be a transparent conductor layer. For example, the second thin film layer 4 may be a transparent conductive oxide (TCO) layer. In the first thin film layer forming process S500, an N-type semiconductor layer 3a (such as Figure 6a and 6b ) and forming a P-type semiconductor layer 3b (as shown) on the other surface 2b of the substrate 2 Figure 6a and 6b In the case of a process as shown in FIG. 1 , the second thin film layer forming process may be to form a first transparent conductor oxide layer 4a (as shown in FIG. 2 ) on the N-type semiconductor layer 3a. Figure 6a and 6b As shown) and forming a second transparent conductor oxide layer 4b (as shown) on the P-type semiconductor layer 3b Figure 6a and 6b (as shown). The second thin film layer 4 can protect the first thin film layer 3, collect carriers (such as holes (+)) generated from the substrate and move the collected carriers upward. The upward direction is the direction opposite to the downward direction. The second thin film layer may include a transparent conductive material, such as indium tin oxide (ITO), ZnOH, ZnO:B, ZnO:Al, SnO2C or SnO2:F. The second thin film layer can be formed from a transparent conductive material such as ZnO, ZnO:B, ZnO:Al or Ag using a sputtering process or a metalorganic chemical vapor deposition (MOCVD) process. The second thin film layer 4 has the function of scattering sunlight so that sunlight can be transmitted at various angles, thereby increasing the proportion of light re-incident to the first thin film layer. According to the method for manufacturing a solar cell of the present invention, the second thin film layer may not be formed and only the first thin film layer may be formed. That is, according to the method for manufacturing a solar cell of the present invention, the second thin film layer 4 can be selectively formed.

[0103] Please refer to Figure 3f The second thin film layer forming process may include a process of forming a second thin film dividing portion and a process of forming a second dividing piece.

[0104] The process of forming the second thin film dividing portion is a process of forming the second thin film dividing portion 40 in the second thin film layer 4. The process of forming the second thin film dividing portion 40 can be performed by etching the second thin film layer 4. As the process of forming the second thin film dividing portion proceeds, the second thin film dividing portion 40 can be formed on one surface of the second thin film layer 4. The second thin film layer 4 can be divided into multiple blocks by the second thin film dividing portion 40. The second thin film dividing portion 40 can be formed at a corresponding position of the substrate dividing portion 20. The second thin film dividing portion 40 can be a dividing portion for dividing a substrate for manufacturing a solar cell into multiple blocks. The second thin film dividing portion 40 can be a groove that is recessed to a specific depth from one surface of the second thin film layer 4 as a whole. The second thin film dividing portion 40 can have a size that gradually decreases in the downward direction.

[0105] The process of forming the second dividing piece is a process of forming the second dividing piece 41 to be inserted into the substrate dividing portion 20. The process of forming the second dividing piece can be performed by stacking the second thin film layer 4 on the substrate 2. As the process of forming the second dividing piece progresses, the second dividing piece 41 can be formed on the other surface of the second thin film layer 4. The second dividing piece 41 can be formed in a shape corresponding to the first thin film dividing portion 30. For example, if the first thin film dividing portion 30 is formed in a shape whose dimensions gradually narrow in the downward direction, the second dividing piece 41 can also be formed in a shape whose dimensions gradually narrow in the downward direction.

[0106] There is no particular order in which the second dividing member and the second thin film dividing portion are formed. For example, the second dividing member may be formed before the second thin film dividing portion, or the second dividing member and the second thin film dividing portion may be formed simultaneously.

[0107] Please refer to Figures 3d to 3g , the method for manufacturing a solar cell according to the present invention may include a cell manufacturing process.

[0108] The battery manufacturing process is a process of forming multiple thin film layers on the substrate 2. As the battery manufacturing process proceeds, a battery 20a in which multiple thin film layers are stacked on the substrate 2 can be formed. The battery manufacturing process can be performed after the first thin film layer forming process S500. In the case where only two thin film layers are stacked on the substrate 2, the battery manufacturing process can be the same process as the second thin film layer forming process. In the case where N (N is an integer greater than or equal to 2) thin film layers are stacked on the substrate 2, the method for manufacturing a solar cell according to the present invention includes a process for forming N thin film dividing portions and a process for forming N dividing pieces. Each thin film dividing portion may be approximately equivalent to the first thin film dividing portion 30. The dividing piece may be approximately equivalent to the first dividing piece 31.

[0109] exist Figure 3gIn the figure, three thin film layers 3, 4, and 5 are shown as being stacked on the substrate 2, but this is only an example, and more than four thin film layers may be stacked on the substrate 2. Figure 3g As shown, in the case where three thin film layers are formed on the substrate 2, the first thin film layer 3 can be an intrinsic semiconductor layer, the second thin film layer 4 can be a semiconductor layer, and the third thin film layer 5 can be a transparent conductor layer. In this case, the third thin film layer 5 can be a perovskite layer 5a (such as Figure 6a and Figure 6b The first thin film layer 3 may be formed by forming an intrinsic (I) type amorphous silicon layer on one surface 2a of the substrate 2 using a plasma enhanced chemical vapor deposition process.

[0110] In addition, Figure 3g In the figure, three thin film layers 3, 4, and 5 are shown stacked on one surface 2a of the substrate 2. However, this is merely an example. The three thin film layers 3, 4, and 5 may be formed only on the other surface 2b of the substrate 2 or on both the one surface 2a and the other surface 2b of the substrate 2. In this case, a plurality of thin film layers may be formed on each of the one surface 2a and the other surface 2b of the substrate 2 using a plasma-enhanced chemical vapor deposition process and a sputtering process. There is no particular order in which the plurality of thin film layers are formed on the one surface 2a of the substrate 2 and the other surface 2b of the substrate 2.

[0111] The method for manufacturing a solar cell according to the present invention can be implemented so that the thin film etching process for etching one surface of a thin film layer can be performed continuously at any point in time while multiple thin film layers are formed on substrate 2. For example, after the first thin film layer 3 is formed on substrate 2, the process of irradiating the first thin film layer 3 with a laser can be performed, and the process of etching one surface of the first thin film layer 3 can be performed continuously. Therefore, the method for manufacturing a solar cell according to the present invention can be implemented so that particles and cracks formed in the first thin film layer 3 can be removed from the first thin film layer 3. Similarly, after the second thin film layer 4 is formed on the first thin film layer 3, the process of irradiating the second thin film layer 4 with a laser can be performed, and the process of etching one surface of the second thin film layer 4 can be performed continuously. Therefore, the method for manufacturing a solar cell according to the present invention can be implemented so that particles and cracks formed in the second thin film layer 4 can be removed from the second thin film layer 4. As described above, the method for manufacturing a solar cell according to the present invention can be implemented so that the thin film etching process for etching one surface of a thin film layer can be performed at any point in time while multiple thin film layers are formed on substrate 2, thereby improving the completion of the etching process and thus enhancing the quality of the finished solar cell.

[0112] Please refer to Figure 2 , the method for manufacturing a solar cell according to the present invention may include a cell mounting process S600 .

[0113] The battery installation process S600 can be a process for installing a battery 20a (where multiple thin film layers are formed on a substrate 2 and a substrate divider 20 is formed in the substrate 2) in the processing chamber. The battery installation process S600 can be performed by a loading device (not shown) that loads the battery 20a into the processing chamber. If multiple thin film layers are formed on the substrate 2, the battery installation process S600 can be performed after the battery manufacturing process.

[0114] Please refer to Figure 2 and Figure 7a , the method for manufacturing a solar cell according to the present invention may include a coating process S700 .

[0115] The coating process S700 may be a process of coating the conductive material 10b on the battery 20a. The conductive material 10b may be a conductive material, such as a transparent conductive film (TCF). The coating process S700 may be performed after the battery installation process S600. The coating process S700 may be performed on one surface of the battery 20a. The coating process S700 may also be performed on the other surface of the battery 20a. The coating process S700 may be performed by a conductive material coating machine installed in the processing space. Figure 7a As shown, the coating process S700 can be performed by multiple conductive material coating machines 1b. Therefore, the method for manufacturing a solar cell according to the present invention can coat multiple conductive materials 10b on the entire surface of the cell 20a, thereby reducing the time spent in the coating process S700.

[0116] As coating process S700 proceeds, conductive material 10b may be applied to battery cell 20a. If only first thin film layer 3 is stacked on substrate 2, conductive material 10b may be applied to first thin film layer 3 as coating process S700 proceeds. If N thin film layers are stacked on substrate 2, conductive material 10b may be applied to all N thin film layers as coating process S700 proceeds.

[0117] Please refer to Figure 2 and Figure 7b , the method for manufacturing a solar cell according to the present invention may include a cutting process S800 .

[0118] The cutting process S800 is a process for dividing the battery 20a into a plurality of unit batteries 20b. The cutting process S800 may be performed after the coating process S700. Figure 7bAs shown, when the battery 20a is to be divided into five unit cells 20b, 20b', 20b", 20b'", 20b"", and 20b"", the method for manufacturing a solar cell according to the present invention may include four cutting processes S800. That is, when the battery 20a is to be divided into M (M is an integer greater than or equal to 2) unit cells 20b, the method for manufacturing a solar cell according to the present invention may include (M-1) cutting processes S800. When N thin film layers are stacked on the substrate 2, the cutting process S800 is performed by dividing the battery 20a into unit cells 20b via the Nth thin film dividing portion. For example, as Figure 3g As shown, with three thin film layers stacked on substrate 2, cell 20a can be cut into unit cells 20b by cell splitting section 50 in a cutting process S800. Cell splitting section 50 can be formed at a corresponding position of substrate splitting section 20. Cell splitting section 50 can be used to separate a substrate used to manufacture solar cells into a plurality of blocks. Cutting process S800 can be performed by a cutting machine (not shown) that separates cell 20a into unit cells 20b.

[0119] Please refer to Figure 2 and Figure 7c , the method for manufacturing a solar cell according to the present invention may include a bonding process S900 .

[0120] The bonding process S900 is a process for bonding the divided unit cells 20b. The bonding process S900 can be performed by bonding the divided unit cells 20b using the conductive material 10b. When the battery 20a is divided into five unit cells 20b, 20b', 20b", 20b'", and 20b'' by the cutting process S800, as shown in FIG. Figure 7c As shown in FIG. 1 , the method for manufacturing a solar cell according to the present invention may include four bonding processes S900. That is, when M (M is an integer greater than or equal to 2) unit cells 20b are to be bonded, the method for manufacturing a solar cell according to the present invention may include (M-1) bonding processes S900. Figure 7cAs shown, the bonding process S900 may include a process of bonding one surface of one side of the first unit cell 20b to the other surface of one side of the second unit cell 20b', a process of bonding one surface of the other side of the second unit cell 20b' to the other surface of one side of the third unit cell 20b", a process of bonding one surface of the other side of the third unit cell 20b" to the other surface of one side of the fourth unit cell 20b'", and a process of bonding one surface of the other side of the fourth unit cell 20b' to the other surface of one side of the fifth unit cell 20b". One side and the other side of each unit cell 20b may be arranged at positions opposite to each other with respect to the midpoint of the unit cell 20b. The bonding process S900 may be performed by a conveying machine (not shown) that moves the unit cells 20b.

[0121] Please refer to Figure 2 and Figure 7c , the method for manufacturing a solar cell according to the present invention may include a curing process S1000 .

[0122] The curing process S1000 is a process for curing the joined unit cells 20b. The curing process S1000 can be performed after the joining process S900. The curing process S1000 can be performed by a heating device (not shown) that heats the joined unit cells 20b. As the curing process S1000 is performed, a solar cell 10 can be manufactured. The solar cell 10 has a module type in which the unit cells 20b are connected to each other. Figure 7c In FIG. 4 , the solar cell 10 is shown to have five unit cells 20 b , but this is only an example. The solar cell 10 may also have more than two and less than four unit cells 20 b , or may have more than six unit cells 20 b .

[0123] The method of manufacturing a solar cell according to the present invention may include a process of preparing a substrate and a process of forming a thin film.

[0124] The substrate preparation process is a process for preparing a substrate 2 having a substrate dividing portion 20 formed therein. The substrate dividing portion 20 includes a first groove 2c and a second groove 2d. The substrate preparation process can be performed after the substrate mounting process S100 and before the first thin film layer forming process S500. The substrate preparation process can include a first substrate etching process S200, a second substrate etching process S300, and a third substrate etching process S400. The substrate preparation process can be performed using a scribing device 1a and an etching device (not shown).

[0125] The thin film forming process is a process for forming a thin film layer on substrate 2 having substrate dividing portion 20 formed therein. The thin film forming process can be performed after the substrate preparation process. If only first thin film layer 3 is stacked on substrate 2, the thin film forming process can be approximately equivalent to first thin film layer forming process S500. If multiple thin film layers are stacked on substrate 2, the thin film forming process can be approximately equivalent to a battery manufacturing process.

[0126] A method for manufacturing a solar cell according to a variant embodiment of the present invention includes a substrate mounting process S100, a first substrate etching process S200, a second substrate etching process S300, a third substrate etching process S400, and a process for forming cells of the solar cell. The substrate mounting process S100, the first substrate etching process S200, the second substrate etching process S300, and the third substrate etching process S400 are substantially the same as those described above, and therefore only the major differences are described below.

[0127] The first substrate etching process S200 may be a process for forming a plurality of linear grooves on the top surface of the substrate 2. The linear grooves formed by performing the first substrate etching process S200 may serve as substrate dividing portions 20 for dividing the substrate into a plurality of sections. The first substrate etching process S200 may be performed after the substrate mounting process S100. The top surface of the substrate 2 may be the same surface as one surface 2a of the substrate 2.

[0128] The third substrate etching process S400 may be a process for etching the top surface and the plurality of linear grooves of the substrate 2. The third substrate etching process S400 may be performed after the first substrate etching process S200. The third substrate etching process S400 may be performed by an etching device.

[0129] The process for forming the cells of the solar cell can be a process for forming one or more thin film layers on the top surface of substrate 2. The process for forming the cells of the solar cell can be performed after the third substrate etching process (S400). If only one thin film layer is stacked on the top surface of substrate 2, the process for forming the cells of the solar cell can be approximately the same as the first thin film layer forming process (S500). If multiple thin film layers are stacked on the top surface of substrate 2, the process for forming the cells of the solar cell can be approximately the same as the cell manufacturing process.

[0130] According to another embodiment of the present invention, the method for manufacturing a solar cell may include a substrate preparation process, a process for forming cells of the solar cell, and a separation process. The process for forming cells of the solar cell is as described above, so its detailed description is omitted below.

[0131] The substrate preparation process may be a process for preparing the substrate 2, wherein a plurality of linear grooves are formed on the top surface of the substrate 2. The substrate preparation process may include a substrate mounting process S100, a first substrate etching process S200, and preparing the substrate 2 in the processing chamber after undergoing the third substrate etching process S400. The substrate preparation process may be performed after the third substrate etching process S400.

[0132] The separation process may be a process of separating the substrate 2 along a plurality of linear grooves. The separation process may be performed after the process of forming the cells of the solar cell. The separation process may be approximately equivalent to the cutting process S800.

[0133] The method for manufacturing a solar cell according to another variation of the present invention may include a substrate preparation process, a coating process S700 and a cutting process S800. The substrate preparation process, the coating process S700 and the cutting process S800 are as described above, so only the main differences are described below.

[0134] The substrate preparation process may be a process for preparing a substrate, wherein a plurality of linear grooves are formed on the top surface of the substrate 2, and cells of the solar cell are formed. In other words, the substrate preparation process may be a process for preparing a substrate, wherein a plurality of linear grooves are formed, and one or more thin film layers are stacked. The substrate preparation process may be performed after the process of forming cells of the solar cell.

[0135] The coating process S700 may be a process of coating the conductive material 10b around each linear groove portion, and the coating process S700 may be performed after the substrate preparation process.

[0136] The cutting process S800 may be a process for dividing the substrate 2 into two blocks along one of the plurality of linear grooves. The cutting process S800 may be performed after the coating process S700. Each of the two blocks obtained by the cutting process S800 may be approximately equivalent to a unit cell 20b.

[0137] Hereinafter, a solar cell according to the present invention will be described in detail with reference to the accompanying drawings.

[0138] The solar cell 1 according to the present invention generates electricity by using light energy. Figures 3e to 3f The solar cell 1 according to the present invention can be manufactured by completing a cell manufacturing process.

[0139] Please refer to Figures 3e to 3f The solar cell 1 according to the present invention may include a substrate 2 and a first thin film layer 3 .

[0140] The substrate 2 may have a specific conductor polarity. The substrate 2 may be formed from a silicon wafer. The first thin film layer 3 may be stacked on one surface 2a of the substrate 2. The substrate dividing portion 20 may be formed on one surface 2a of the substrate 2. The substrate dividing portion 20 may have a dimension that gradually decreases downward. The substrate dividing portion 20 may be formed by performing a first substrate etching process (S200).

[0141] The first thin film layer 3 is formed on the substrate 2. The first thin film layer 3 may be stacked on one surface 2a of the substrate 2. The first dividing piece 31 included in the first thin film layer 3 may be inserted into the substrate dividing portion 20. The first dividing piece 31 may be formed to correspond to the shape of the substrate dividing portion 20. For example, the first dividing piece 31 may be formed so that its size gradually decreases in the downward direction. The first dividing piece 31 may be formed by performing the first thin film layer forming process S500.

[0142] The above description of the solar cell 1 according to the present invention includes a substrate 2 and a first thin film layer 3, but this is only an example. The solar cell 1 according to the present invention can be Figure 3f The substrate 2 and two thin film layers 3 and 4 are shown, or the substrate 2 and two thin film layers 3 and 4 may be Figure 3g The figure includes a substrate 2 and three thin film layers 3, 4, and 5.

[0143] Hereinafter, an embodiment of a solar cell 1 according to the present invention will be described in detail with reference to the accompanying drawings. In this embodiment, a plurality of thin film layers are formed on a substrate 2 .

[0144] Please refer to Figure 6a and Figure 6b The solar cell 1 according to the present invention may include a substrate 2, an N-type semiconductor layer 3a, a first transparent conductive oxide layer 4a, a perovskite layer 5a, a P-type semiconductor layer 3b, and a second transparent conductive oxide layer 4b. The N-type semiconductor layer 3a is stacked on the top surface of the substrate 2, the first transparent conductive oxide layer 4a is stacked on the N-type semiconductor layer 3a, the perovskite layer 5a is stacked on the first transparent conductive oxide layer 4a, the P-type semiconductor layer 3b is stacked on the bottom surface of the substrate 2, and the second transparent conductive oxide layer 4b is stacked on the P-type semiconductor layer 3b. In this case, the cell dividing portion 50 may be formed on the bottom surface of the substrate 2. Therefore, compared to an embodiment in which the cell dividing portion 50 is formed on the top surface of the substrate 2, the solar cell 1 according to the present invention can provide a restraining force that prevents the perovskite material, transparent conductive oxide material, and N-type semiconductor material from flowing to the cell dividing portion 50 due to gravity during the scribing process.

[0145] Hereinafter, a solar cell according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0146] Please refer to Figure 7c and Figure 8 , according to a solar cell 10 (eg Figure 7c (as shown) can be manufactured using the method for manufacturing a solar cell according to the present invention. A solar cell 10 according to an embodiment of the present invention can be manufactured by completing the curing process S1000. The solar cell 10 according to an embodiment of the present invention can be a module type in which unit cells 20b are connected to each other. Hereinafter, each unit cell 20b in the solar cell 10 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0147] Please refer to Figure 8 Each unit cell 20b may include a cell top surface 20b1, a cell cross-sectional groove 20b2, a first cross-sectional area 20b3, a second cross-sectional area 20b4, and a third cross-sectional area 20b5.

[0148] The battery top surface 20b1 is positioned upward. This top surface 20b1 may correspond to a surface of the unit cell 20b that faces upward. Conductive material 10b may be applied to the battery top surface 20b1. If N thin film layers are stacked on the substrate 2, the battery top surface 20b1 may be the same surface as a surface of the Nth thin film layer.

[0149] The battery cross-sectional groove 20b2 is formed by dividing the battery 20a into a plurality of unit cells 20b. The battery cross-sectional groove 20b2 may be part of the battery divider 50. The battery cross-sectional groove 20b2 is formed in the battery top surface 20b1. The battery cross-sectional groove 20b2 may be recessed to a specific depth from the battery top surface 20b1. The battery cross-sectional groove 20b2 may have a dimension that gradually extends downward and gradually decreases.

[0150] The first cross-section 20b3 is positioned facing the battery cross-section groove 20b2. The first cross-section 20b3 may connect to the second cross-section 20b4. The portion where the first cross-section 20b3 and the second cross-section 20b4 connect may form a corner. The first cross-section 20b3 may be inclined relative to the battery top surface 20b1. The first cross-section 20b3 may connect each of the second cross-sections 20b4 and the third cross-section 20b5.

[0151] The second cross section 20b4 connects the first cross sections 20b3 and the top surface 20b1 of the battery. The angle θ2 between the second cross section 20b4 and the first cross section 20b3 (as shown in FIG. Figure 8 The angle (as shown) may be less than 180 degrees. The second cross section 20b4 may be arranged to be inclined relative to each first cross section 20b3 and the battery top surface 20b1. The portion where the second cross section 20b4 connects to the battery top surface 20b1 may form a corner. The angle between the second cross section 20b4 and the battery top surface 20b1 may be approximately 90 degrees.

[0152] The third cross section 20b5 connects the first cross section 20b3 and the battery bottom surface. The third cross section 20b5 can be formed by dividing the battery 20a into a plurality of unit cells 20b. The third cross section 20b5 can be formed by a flat surface. The battery bottom surface can correspond to the other surface of the unit cell 20b positioned downward. The portion where the third cross section 20b5 connects to the first cross section 20b3 can form a corner. The third cross section 20b5 can be arranged to be inclined relative to each first cross section 20b3 and the battery bottom surface. The portion where the third cross section 20b5 connects to the battery bottom surface can form a corner.

[0153] Hereinafter, a substrate 2 for a solar cell according to the present invention will be described in detail with reference to the accompanying drawings.

[0154] Please refer to Figures 5a to 5d The substrate 2 for a solar cell according to the present invention is formed by performing the first substrate etching process S200 before performing the third substrate etching process S400. The substrate 2 for a solar cell according to the present invention may include a substrate body, a first groove 2c, a second groove 2d, and a damage prevention portion 2f.

[0155] The substrate body has a specific conductor polarity. The substrate body can function as the body of the substrate 2 for a solar cell according to the present invention. The substrate body can form the overall appearance of the substrate 2 for a solar cell according to the present invention.

[0156] The first groove 2c is formed in the substrate body. The first groove 2c can be formed by etching one surface 2a of the substrate body to a specific depth. The first groove 2c can be formed in a completely rectangular shape. The first groove 2c can be formed by performing the first substrate etching process S200.

[0157] The second groove 2d is formed inside the first groove 2c. That is, the second groove 2d can communicate with the first groove 2c. The second groove 2d serves to enlarge the etched surface 2e facing the first groove 2c. Therefore, the substrate 2 for a solar cell according to the present invention can have an enlarged etched surface 2e, which has a cross-section that is superior in quality to the substrate cross-section 2g, thereby improving the overall quality of the finished solar cell. The second groove 2d can be formed in a completely rectangular shape. The second groove 2d can be formed by performing the second substrate etching process S300.

[0158] The damage prevention portion 2f can be formed in a stepped shape relative to the etched surface 2e and include a second groove 2d extending inward from the damage prevention portion 2f. The damage prevention portion 2f limits the expansion of the etched surface 2e, thereby preventing the solar cell substrate 2 according to the present invention from breaking into multiple sections. Consequently, even when physical impact, such as a collision, occurs between processing equipment installed in the processing space and the substrate 2, the solar cell substrate 2 according to the present invention can reduce the likelihood of damage to the substrate 2, thereby improving the stability of the solar cell manufacturing process.

[0159] The size of the damage prevention portion 2f can be smaller than the size of the second groove 2d relative to the scribing direction forming the first groove 2c. In other words, the size of the second groove 2d can be larger than the size of the damage prevention portion 2f relative to the scribing direction. Accordingly, the solar cell substrate 2 according to the present invention can increase the expanded area of ​​the etched surface 2e.

[0160] The damage prevention portion 2f may be formed to have a second thickness L2 (eg Figure 5b and Figure 5c As shown), the second thickness L2 has a thickness equivalent to or greater than the first thickness L1 of the substrate body (as shown Figure 5b and Figure 5c ), and the second thickness L2 has a value equal to or less than the first thickness L1. Therefore, the substrate 2 for solar cells according to the present invention can be sufficient to ensure that the substrate 2 is prevented from being divided into multiple blocks. The thickness direction is parallel to the direction in which the height of the substrate 2 for solar cells according to the present invention increases or decreases as a whole, and is perpendicular to the scribing direction. The second thickness L2 may have a value equivalent to or greater than 70% of the first thickness L1. In this case, the third thickness L3 (as shown) between the anti-damage portion 2f and one surface 2a of the substrate 2 Figure 5b and Figure 5c The damage prevention portion 2f may be formed to protrude from the etched surface 2e.

[0161] The anti-damage portion 2f may include a first protective component 2f1, a second protective component 2f2, and a connecting component 2f3.

[0162] The first protective member 2f1 is formed in a stepped shape relative to the etched surface 2e. The first protective member 2f1 may be formed on a side opposite to the second groove 2d and may prevent damage to the substrate 2 for a solar cell according to the present invention. The first protective member 2f1 may be formed in a completely rectangular shape.

[0163] The second protective member 2f2 is formed at a position separated from the first protective member 2f1. The second protective member 2f2 may be formed in a stepped shape relative to the etched surface 2e. The second protective member 2f2 may be formed on the other side opposite the second groove 2d and may prevent damage to the substrate 2 for a solar cell according to the present invention. The second protective member 2f2 may be formed in a completely rectangular shape.

[0164] The connecting member 2f3 connects the first protection member 2f1 and the second protection member 2f2. The second groove 2d may be provided inside the connecting member 2f3, the second protection member 2f2 and the first protection member 2f1. The connecting member 2f3 may be formed in a completely rectangular shape.

[0165] Connecting member 2f3 can connect each of the first and second protective members 2f1 and 2f2, thereby forming a stepped shape. For example, the angles between connecting member 2f3 and first protective member 2f1 and between connecting member 2f3 and second protective member 2f2 can each be 90 degrees. Connecting member 2f3 can connect each of the first and second protective members 2f1 and 2f2 to form a curved surface.

[0166] The present invention as described above is not limited to the above embodiments and drawings. Those skilled in the art can clearly understand and make various modifications, variations and substitutions without departing from the spirit and scope of the present invention.

Claims

1. A solar cell comprising: a substrate having a conductive polarity; and a first thin film layer formed on the substrate, in A substrate dividing portion is formed on a surface of the substrate, and the substrate dividing portion is used to divide the substrate into a plurality of unit cells. The substrate dividing portion is formed such that a size of the substrate dividing portion gradually decreases in a downward direction, and The first film layer includes a first dividing piece inserted into the substrate dividing portion.

2. The solar cell according to claim 1, wherein Each of the unit cells comprises: A battery top surface, disposed in an upward direction; A battery cross-sectional groove formed on the top surface of the battery; A first cross section, arranged to face the battery cross section groove; and a second cross section connecting the first cross section and each of the top surfaces of the battery, and A portion where the first cross section is connected to the second cross section forms a corner. The solar cell as claimed in claim 2 , wherein an angle between the first cross section and the second cross section is less than 180 degrees.

4. A substrate for a solar cell, the substrate comprising: A substrate body having a conductor polarity; A first groove is formed in the substrate body; a second groove communicating with the first groove to expand an etching surface facing the first groove; and An anti-damage portion is formed in a stepped shape relative to the etched surface and is formed with the second groove, and the second groove is arranged inward from the anti-damage portion. 5 . The substrate of claim 4 , wherein the second groove is formed to have a size greater than that of the damage preventing portion with respect to a scribing direction in which the first groove is formed.

6. The substrate of claim 4, wherein the damage prevention portion is formed to have a second thickness, the second thickness having a value equivalent to or greater than 1 / 2 of the first thickness of the substrate body, and the second thickness having a value equal to or less than the first thickness.

7. The substrate of claim 4, wherein The anti-damage portion includes a first protection member, a second protection member, and a connecting member, wherein the first protection member is formed in a stepped shape relative to the etching surface, the second protection member is formed at a position separated from the first protection member, and the connecting member connects each of the first protection member and the second protection member, and The connecting member connects each of the first protecting member and the second protecting member so as to form a step shape through the connecting member, the first protecting member and the second protecting member.

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