Back contact solar cell, manufacturing method thereof and photovoltaic module

Abstract

The invention relates to a back contact solar cell, a manufacturing method thereof and a photovoltaic module. The manufacturing method of the back contact solar cell comprises the steps of providing a substrate; correspondingly forming a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the first surface and the second surface of the substrate; forming a first doping layer and a second doping layer which are arranged at an interval and are opposite in doping type on one side, deviating from the substrate, of the second intrinsic semiconductor layer, and forming a first passivation layer laid on one sides, deviating from the substrate, of the first doping layer and the second doping layer, enabling the first passivation layer to expose a first metal region of the first doping layer and a second metal region of the second doping layer; obtaining a solar cell main body; the first intrinsic semiconductor layer of the solar cell main body faces upwards and is connected with an electroplating cathode; enabling the first metal region and the second metal region of the solar cell main body to face downwards and to be in contact with electroplating liquid with an electroplating anode; and correspondingly forming a first electrode and a second electrode in the first metal region and the second metal region of the solar cell main body.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic cell technology, and in particular to back-contact solar cells and methods for making same, as well as photovoltaic modules. Background Art

[0002] With the development of photovoltaic technology, the photoelectric conversion efficiency of batteries has gradually increased and the cost has gradually decreased. However, due to the high price of silver paste used in the screen printing process, the cost of silver paste accounts for about 40% of the non-silicon cost of the battery, making the cost of the battery high. Electroplating, chemical plating and other technologies can replace silver in the metallization process with cheap metals such as copper, greatly reducing the cost of solar cells, and gradually being widely used in the production of solar cell electrodes.

[0003] In the related art, back-contact solar cells use horizontal plating or hanging plating to make electrodes; however, before using either electroplating method to make electrodes, a metal seed layer needs to be made, which increases the process complexity of the back-contact solar cell and increases the production cost of the back-contact solar cell. Summary of the invention

[0004] Based on this, the present application provides a back-contact solar cell and a manufacturing method thereof and a photovoltaic module to simplify the manufacturing process of the back-contact solar cell and reduce the manufacturing cost of the back-contact solar cell.

[0005] An embodiment of the first aspect of the present application provides a method for manufacturing a back-contact solar cell, comprising:

[0006] Providing a substrate, the substrate comprising a first surface and a second surface disposed opposite to each other;

[0007] forming a first intrinsic semiconductor layer and a second intrinsic semiconductor layer corresponding to the first surface and the second surface of the substrate;

[0008] Forming a first doping layer and a second doping layer which are spaced apart and have opposite doping types on a side of the second intrinsic semiconductor layer away from the substrate, and a first passivation layer which is laid on a side of the first doping layer and the second doping layer away from the substrate, so that the first passivation layer exposes a first metal region of the first doping layer and a second metal region of the second doping layer; obtaining a solar cell body;

[0009] The first intrinsic semiconductor layer of the solar cell body is facing upward and connected to the electroplating cathode; the first metal area and the second metal area of ​​the solar cell body are facing downward and in contact with the electroplating solution with the electroplating anode; so as to form a first electrode and a second electrode corresponding to the first metal area and the second metal area of ​​the solar cell body.

[0010] In one embodiment, the steps of making the first intrinsic semiconductor layer of the solar cell body face upward and connected to the electroplating cathode; making the first metal area and the second metal area of ​​the solar cell body face downward and contact with the electroplating solution with the electroplating anode; so as to form the first electrode and the second electrode correspondingly on the first metal area and the second metal area of ​​the solar cell body, include:

[0011] The solar cell body is horizontally transferred; the first intrinsic semiconductor layer of the solar cell body is facing upward; the first metal region and the second metal region of the solar cell body are facing downward and in contact with a plating solution;

[0012] The electroplating cathode is connected to the first intrinsic semiconductor layer, and the electroplating anode is placed in the electroplating solution, so that the solar cell body is electroplated in horizontal transmission, so that the first metal area and the second metal area of ​​the solar cell body form a first electrode and a second electrode respectively.

[0013] In one embodiment, after the steps of making the first intrinsic semiconductor layer of the solar cell body face upward and connect to the electroplating cathode; making the first metal area and the second metal area of ​​the solar cell body face downward and contact with the electroplating solution with the electroplating anode; and forming the first electrode and the second electrode correspondingly at the first metal area and the second metal area of ​​the solar cell body, the method further includes:

[0014] Laying a protective layer on the side of the first electrode and the second electrode facing away from the substrate, wherein the protective layer covers the first electrode and the second electrode;

[0015] forming a second passivation layer on a side of the first intrinsic semiconductor layer facing away from the substrate;

[0016] The protective layer is removed.

[0017] In one embodiment, before forming the second passivation layer on the side of the first intrinsic semiconductor layer facing away from the substrate, the method further includes:

[0018] The surface of the first intrinsic semiconductor layer of the substrate is cleaned to remove oil stains, surface scratches and metal pollution.

[0019] In one embodiment, the first doping layer and the second doping layer are formed on the side of the second intrinsic semiconductor layer away from the substrate and are spaced apart and have opposite doping types, and a first passivation layer is laid on the side of the first doping layer and the second doping layer away from the substrate, so that the first passivation layer exposes the first metal region of the first doping layer and the second metal region of the second doping layer; the step of obtaining the solar cell body includes:

[0020] forming a first doping layer and a second doping layer which are spaced apart and have opposite doping types on a side of the second intrinsic semiconductor layer away from the substrate;

[0021] Laying a first passivation film layer on the side of the first doped layer and the second doped layer away from the substrate, so that the first passivation film layer covers the first doped layer and the second doped layer;

[0022] The first passivation film layer is patterned to remove regions of the first passivation film layer corresponding to the first metal region and the second metal region to obtain a first passivation layer exposing the first metal region of the first doped layer and the second metal region of the second doped layer.

[0023] In one embodiment, the step of forming a first doping layer and a second doping layer which are spaced apart and have opposite doping types on a side of the second intrinsic semiconductor layer away from the substrate comprises:

[0024] forming a first doped film layer and a first silicate glass film layer on a surface of the second intrinsic semiconductor layer facing away from the substrate;

[0025] Patterning the first silicate glass film layer to remove the first silicate glass film layer located in the second region of the second surface;

[0026] Etching the first doped film layer to remove the first doped film layer located in the second region of the second surface, thereby obtaining a first doped layer located in the first region of the second surface;

[0027] Laying a second doped film layer and a second silicate glass film layer on a side of the first doped layer away from the substrate, so that the second doped film layer covers the first doped layer and the first intrinsic semiconductor layer located in the second region; and the second silicate glass film layer covers the second doped film layer;

[0028] patterning the second silicate glass film layer to remove the second silicate glass film layer located in the first area of ​​the second surface;

[0029] The second doped film layer is etched to remove the first doped film layer located in the first region of the second surface, thereby obtaining a second doped layer located in the second region of the second surface.

[0030] In one embodiment, the material of the protective layer includes ink.

[0031] In one embodiment, the thickness of the first intrinsic semiconductor layer is greater than the thickness of the second intrinsic semiconductor layer.

[0032] An embodiment of the second aspect of the present application provides a back-contact solar cell, which is manufactured using the method for manufacturing a back-contact solar cell described in any of the above embodiments.

[0033] An embodiment of the third aspect of the present application provides a photovoltaic module, comprising the back-contact solar cell described in any of the above embodiments.

[0034] The above-mentioned method for manufacturing a back-contact solar cell is as follows: the first intrinsic semiconductor layer of the solar cell body is directed upward and connected to an electroplating cathode; the first metal area and the second metal area of ​​the solar cell body are directed downward and contacted with an electroplating solution having an electroplating anode; so that a first electrode and a second electrode are formed correspondingly at the first metal area and the second metal area of ​​the solar cell body; that is, the entire surface of the first intrinsic semiconductor layer is used as a conductive layer and connected to the electroplating cathode, and the first electrode and the second electrode are manufactured by an electroplating process. Therefore, on the one hand, since the conductivity and uniformity of the entire surface of the first intrinsic semiconductor layer are good, when the first electrode and the second electrode are manufactured by an electroplating process, there is no need to manufacture a metal seed layer, and the manufacture of the first electrode and the second electrode can be completed, thereby simplifying the manufacturing process of the back-contact solar cell and reducing the manufacturing cost of the back-contact solar cell.

[0035] On the other hand, since the first intrinsic semiconductor layer of the solar cell body faces upward and is connected to the electroplating cathode, the first metal area and the second metal area of ​​the solar cell body both face downward and are in contact with the electroplating solution, thereby preventing the electroplating cathode from contacting the electroplating solution and preventing the growth of the metal plating layer on the electroplating cathode, ensuring the conductivity of the electroplating cathode and reducing unnecessary cleaning steps, thereby improving the manufacturing efficiency of the back contact solar cell and reducing the manufacturing cost of the back contact solar cell;

[0036] In addition, when the first metal region of the first doped layer and the second metal region of the second doped layer are both facing downward and in contact with the electroplating solution, the first passivation layer can act as a mask to avoid metal deposition in other areas outside the first metal region and the second metal region, thereby reducing unnecessary cleaning steps and reducing the production cost of back-contact solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] FIG. 1 is a flow chart of a method for manufacturing a back-contact solar cell in some embodiments of the present application.

[0038] FIG. 2 is another flow chart of a method for manufacturing a back-contact solar cell in some embodiments of the present application.

[0039] FIG. 3 is another flow chart of a method for manufacturing a back-contact solar cell in some embodiments of the present application.

[0040] Figure 4This is another flow chart of a method for manufacturing a back-contact solar cell in some embodiments of the present application.

[0041] Figure 5 This is a process flow chart of a method for manufacturing a back-contact solar cell in some embodiments of the present application.

[0042] Description of reference numerals:

[0043] 11. substrate; 11a. first surface; 11b. second surface; 12. first intrinsic semiconductor layer; 13. second intrinsic semiconductor layer; 14. first doped layer; 15. second doped layer; 16. first passivation layer; 17. first electrode; 18. second electrode; 19. protective layer; 20. second passivation layer. DETAILED DESCRIPTION

[0044] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0045] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0046] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0047] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0048] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0049] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only implementation method.

[0050] With the development of photovoltaic technology, the photoelectric conversion efficiency of batteries has gradually increased and the cost has gradually decreased. However, due to the high price of silver paste used in the screen printing process, the cost of silver paste accounts for about 40% of the non-silicon cost of the battery, making the cost of the battery high. Electroplating, chemical plating and other technologies can replace silver in the metallization process with cheap metals such as copper, greatly reducing the cost of solar cells, and gradually being widely used in the production of solar cell electrodes.

[0051] In the related art, back-contact solar cells use horizontal plating or hanging plating to make electrodes; however, before using either electroplating method to make electrodes, a metal seed layer needs to be made, which increases the process complexity of the back-contact solar cell and increases the production cost of the back-contact solar cell.

[0052] Based on the above technical problems, the embodiments of the present application provide a back-contact solar cell and a manufacturing method thereof and a photovoltaic module to simplify the manufacturing process of the back-contact solar cell and reduce the manufacturing cost of the back-contact solar cell.

[0053] First, see Figures 1 and Figure 5 The present application embodiment provides a method for manufacturing a back-contact solar cell, comprising:

[0054] S10, providing a substrate 11, wherein the substrate 11 includes a first surface 11a and a second surface 11b arranged opposite to each other;

[0055] Specifically, the first surface 11 a may be a light-receiving surface, and the second surface 11 b may be a backlight surface.

[0056] S20, forming a first intrinsic semiconductor layer 12 and a second intrinsic semiconductor layer 13 on the first surface 11a and the second surface 11b of the substrate 11 respectively;

[0057] Specifically, the first intrinsic semiconductor layer 12 is formed on the first surface 11 a of the substrate 11 , and the second intrinsic semiconductor layer 13 is formed on the second surface 11 b of the substrate 11 .

[0058] S30, forming a first doping layer 14 and a second doping layer 15 which are spaced apart and have opposite doping types on a side of the second intrinsic semiconductor layer 13 away from the substrate 11, and a first passivation layer 16 which is laid on a side of the first doping layer 14 and the second doping layer 15 away from the substrate 11, so that the first passivation layer 16 exposes a first metal region of the first doping layer 14 and a second metal region of the second doping layer 15; obtaining a solar cell body;

[0059] Specifically, the doping type of the doping layer can be divided into N-type doping and P-type doping. One of the first doping layer 14 and the second doping layer 15 can be P-type doped, and the other can be N-type doped.

[0060] S40, make the first intrinsic semiconductor layer 12 of the solar cell body face upward and connect to the electroplating cathode; make the first metal area and the second metal area of ​​the solar cell body face downward and contact with the electroplating solution with the electroplating anode; so as to form the first electrode 17 and the second electrode 18 correspondingly in the first metal area and the second metal area of ​​the solar cell body.

[0061] The method for manufacturing a back-contact solar cell provided in an embodiment of the present application is such that the first intrinsic semiconductor layer 12 of the solar cell body faces upward and is connected to an electroplating cathode; the first metal area and the second metal area of ​​the solar cell body faces downward and is in contact with an electroplating solution having an electroplating anode; so that a first electrode 17 and a second electrode 18 are formed correspondingly on the first metal area and the second metal area of ​​the solar cell body; that is, the entire surface of the first intrinsic semiconductor layer 12 is used as a conductive layer and is connected to the electroplating cathode, and the first electrode 17 and the second electrode 18 are manufactured by an electroplating process. Therefore, on the one hand, since the conductivity and uniformity of the entire surface of the first intrinsic semiconductor layer 12 are good, when the first electrode 17 and the second electrode 18 are manufactured by an electroplating process, there is no need to manufacture a metal seed layer, and the first electrode 17 and the second electrode 18 can be manufactured, thereby simplifying the manufacturing process of the back-contact solar cell and reducing the manufacturing cost of the back-contact solar cell.

[0062] On the other hand, since the first intrinsic semiconductor layer 12 of the solar cell body faces upward and is connected to the electroplating cathode, the first metal area and the second metal area of ​​the solar cell body both face downward and are in contact with the electroplating solution, thereby preventing the electroplating cathode from contacting the electroplating solution and preventing the growth of the metal plating layer on the electroplating cathode, ensuring the conductivity of the electroplating cathode and reducing unnecessary cleaning steps, thereby improving the manufacturing efficiency of the back contact solar cell and reducing the manufacturing cost of the back contact solar cell;

[0063] In addition, when the first metal region of the first doping layer 14 and the second metal region of the second doping layer 15 are both facing downward and in contact with the electroplating solution, the first passivation layer 16 can act as a mask to avoid metal deposition in other areas outside the first metal region and the second metal region, thereby reducing unnecessary cleaning steps and the production cost of back-contact solar cells.

[0064] Referring to FIG. 2 , in one embodiment, S60, the first intrinsic semiconductor layer 12 of the solar cell body is facing upward and connected to the electroplating cathode; the first metal region and the second metal region of the solar cell body are facing downward and contacted with the electroplating solution with the electroplating anode; so as to form the first electrode 17 and the second electrode 18 correspondingly on the first metal region and the second metal region of the solar cell body, specifically including:

[0065] The solar cell body is horizontally transferred; the first intrinsic semiconductor layer 12 of the solar cell body is facing upward; the first metal region and the second metal region of the solar cell body are facing downward and in contact with the electroplating solution;

[0066] The electroplating cathode is connected to the first intrinsic semiconductor layer 12, and the electroplating anode is placed in the electroplating solution, so that the solar cell body is electroplated in horizontal transmission, so that the first metal area and the second metal area of ​​the solar cell body form the first electrode 17 and the second electrode 18 correspondingly.

[0067] Therefore, that is to say, the first electrode 17 and the second electrode 18 are manufactured by a horizontal electroplating process. In this way, the first electrode 17 and the second electrode 18 can have better height uniformity and higher pull-off force, thereby improving the manufacturing efficiency of the first electrode 17 and the second electrode 18, and further improving the production capacity of the back-contact solar cell.

[0068] See Figure 3 and Figure 5 In one embodiment, S60, the first intrinsic semiconductor layer 12 of the solar cell body is facing upward and connected to the electroplating cathode; the first metal area and the second metal area of ​​the solar cell body are facing downward and contacted with the electroplating solution with the electroplating anode; after the first electrode 17 and the second electrode 18 are formed correspondingly on the first metal area and the second metal area of ​​the solar cell body, the manufacturing method further includes:

[0069] S50, laying a protective layer 19 on the side of the first electrode 17 and the second electrode 18 facing away from the substrate 11, wherein the protective layer 19 covers the first electrode 17 and the second electrode 18;

[0070] A protection layer 19 may be formed on a side of the first electrode 17 facing away from the substrate 11 and on a side of the second electrode 18 facing away from the substrate 11 by a printing process, so as to protect the first electrode 17 and the second electrode 18 .

[0071] S60, forming a second passivation layer 20 on a side of the first intrinsic semiconductor layer 12 facing away from the substrate 11;

[0072] S70 , removing the protective layer 19 .

[0073] In the above process, before forming the second passivation layer 20 on the side of the first intrinsic semiconductor layer 12 facing away from the substrate 11, a protective layer 19 is laid on the side of the first electrode 17 and the second electrode 18 facing away from the substrate 11. The protective layer 19 covers the first electrode 17 and the second electrode 18. In this way, metal contamination during the preparation of the second passivation layer 20 can be reduced, and the film formation quality of the second passivation layer 20 can be improved, which is beneficial to improving the production yield of back-contact solar cells.

[0074] See also Figure 4 and Figure 5 In one embodiment, S60, before forming the second passivation layer 20 on the side of the first intrinsic semiconductor layer 12 facing away from the substrate 11, the manufacturing method further includes:

[0075] S50a, cleaning the surface of the first intrinsic semiconductor layer 12 of the substrate 11 to remove oil stains, surface scratches and metal contamination.

[0076] Specifically, the cleaning treatment includes acid washing, alkaline washing and water washing; a chain cleaning machine is used to make the first intrinsic semiconductor layer 12 of the substrate 11 pass through the acid washing tank, the alkaline washing tank and the water washing tank in sequence, and the oxide layer and metal impurities on the surface of the first intrinsic semiconductor layer 12 are removed in the acid washing tank, and the oil stains and surface scratches on the first intrinsic semiconductor layer 12 are removed in the alkaline washing tank; impurities such as ions on the first intrinsic semiconductor layer 12 are removed in the water washing tank, thereby removing the oil stains, scratches and metal pollution on the surface of the first intrinsic semiconductor layer 12.

[0077] This can facilitate the film formation of the second passivation layer 20 and improve the film formation quality of the second passivation layer 20, thereby facilitating the improvement of the manufacturing yield of the back-contact solar cell.

[0078] See also Figure 5 In one embodiment, S30, forming a first doping layer 14 and a second doping layer 15 which are spaced apart and have opposite doping types on a side of the second intrinsic semiconductor layer 13 away from the substrate 11, and a first passivation layer 16 which is laid on a side of the first doping layer 14 and the second doping layer 15 away from the substrate 11, so that the first passivation layer 16 exposes a first metal region of the first doping layer 14 and a second metal region of the second doping layer 15; obtaining a solar cell body, specifically comprising:

[0079] A first doping layer 14 and a second doping layer 15 which are spaced apart and have opposite doping types are formed on a side of the second intrinsic semiconductor layer 13 facing away from the substrate 11;

[0080] Laying a first passivation film layer on the side of the first doping layer 14 and the second doping layer 15 facing away from the substrate 11, so that the first passivation film layer covers the first doping layer 14 and the second doping layer 15;

[0081] The first passivation film layer is patterned to remove regions of the first passivation film layer corresponding to the first metal region and the second metal region to obtain a first passivation layer 16 exposing the first metal region of the first doping layer 14 and the second metal region of the second doping layer 15 .

[0082] Specifically, the first passivation film layer can be patterned by laser ablation or mask exposure to remove the areas of the first passivation film layer corresponding to the first metal area and the second metal area to obtain a first passivation layer 16 exposing the first metal area of ​​the first doped layer 14 and the second metal area of ​​the second doped layer 15.

[0083] In one embodiment, in S30, a first doping layer 14 and a second doping layer 15 which are spaced apart and have opposite doping types are formed on a side of the second intrinsic semiconductor layer 13 facing away from the substrate 11; specifically, the first doping layer 14 and the second doping layer 15 are formed on a side of the second intrinsic semiconductor layer 13 facing away from the substrate 11;

[0084] forming a first doped film layer and a first silicate glass film layer on a surface of the second intrinsic semiconductor layer 13 facing away from the substrate 11;

[0085] Patterning the first silicate glass film layer to remove the first silicate glass film layer located in the second region of the second surface 11 b;

[0086] Etching the first doped film layer to remove the first doped film layer located in the second region of the second surface 11 b , thereby obtaining a first doped layer 14 located in the first region of the second surface 11 b ;

[0087] Laying a second doped film layer and a second silicate glass film layer on the side of the first doped layer 14 away from the substrate 11, so that the second doped film layer covers the first doped layer 14 and the first intrinsic semiconductor layer 12 located in the second region of the second surface 11b; the second silicate glass film layer covers the second doped film layer;

[0088] Patterning the second silicate glass film layer to remove the second silicate glass film layer located in the first area of ​​the second surface 11 b;

[0089] The second doped film layer is etched to remove the first doped film layer located in the first region of the second surface 11 b , thereby obtaining a second doped layer 15 located in the second region of the second surface 11 b .

[0090] In the above process, the first silicate glass film layer is patterned to remove the first silicate glass film layer located in the second area of ​​the second surface 11b, so that the first silicate glass film layer located in the first area of ​​the second surface 11b can be retained, so that when the first doped film layer is etched, the first doped film layer located in the first area of ​​the second surface 11b is not etched due to the protection of the first silicate glass film layer, so that the first doped layer 14 located in the first area of ​​the second surface 11b can be obtained. The second silicate glass film layer is patterned to remove the second silicate glass film layer located in the first area of ​​the second surface 11b, so that the second silicate glass film layer located in the second area of ​​the second surface 11b can be retained, so that when the second doped film layer is etched, the second doped film layer located in the second area of ​​the second surface 11b is not etched due to the protection of the second silicate glass film layer, so that the second doped layer 15 located in the second area of ​​the second surface 11b can be obtained. Therefore, it is not necessary to design a separate mask layer when manufacturing the first doping layer 14 and the second doping layer 15, thereby simplifying the manufacturing process of the first doping layer 14 and the second doping layer 15, and further simplifying the manufacturing process of the back contact solar cell, reducing the manufacturing cost of the back contact solar cell.

[0091] In one embodiment, the material of the protection layer 19 includes ink.

[0092] In one embodiment, the thickness of the first intrinsic semiconductor layer 12 is greater than the thickness of the second intrinsic semiconductor layer 13 .

[0093] Therefore, it can be ensured that the first intrinsic semiconductor layer 12 still has a certain thickness after the cleaning process, avoiding the first intrinsic semiconductor layer 12 from being damaged, cracked or pitted during the cleaning process, thereby improving the manufacturing yield of the back contact solar cell.

[0094] In a second aspect, the embodiments of the present application provide a back-contact solar cell, which is manufactured using the manufacturing method of the back-contact solar cell in any of the above embodiments. Thus, the manufacturing process of the back-contact solar cell can be simplified, the manufacturing efficiency of the back-contact solar cell can be improved, and the manufacturing cost of the back-contact solar cell can be reduced.

[0095] In a third aspect, the embodiments of the present application provide a photovoltaic module, comprising the back-contact solar cell in any of the above embodiments, thereby reducing the cost of the photovoltaic module.

[0096] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0097] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for manufacturing a back contact solar cell, characterized in that: include: Providing a substrate, the substrate comprising a first surface and a second surface disposed opposite to each other; forming a first intrinsic semiconductor layer and a second intrinsic semiconductor layer corresponding to the first surface and the second surface of the substrate; forming a first doping layer and a second doping layer which are spaced apart and have opposite doping types on a side of the second intrinsic semiconductor layer away from the substrate, and a first passivation layer which is laid on a side of the first doping layer and the second doping layer away from the substrate, so that the first passivation layer exposes a first metal region of the first doping layer and a second metal region of the second doping layer; obtaining a solar cell body; The first intrinsic semiconductor layer of the solar cell body is facing upward and connected to the electroplating cathode; the first metal area and the second metal area of ​​the solar cell body are facing downward and in contact with the electroplating solution with the electroplating anode; so as to form a first electrode and a second electrode corresponding to the first metal area and the second metal area of ​​the solar cell body.

2. The method for manufacturing a back contact solar cell according to claim 1, characterized in that: The first intrinsic semiconductor layer of the solar cell body is facing upward and connected to an electroplating cathode; the first metal region and the second metal region of the solar cell body are facing downward and contacted with an electroplating solution having an electroplating anode; The step of forming a first electrode and a second electrode correspondingly in the first metal area and the second metal area of ​​the solar cell body comprises: The solar cell body is horizontally transferred; the first intrinsic semiconductor layer of the solar cell body is facing upward; the first metal region and the second metal region of the solar cell body are facing downward and in contact with a plating solution; The electroplating cathode is connected to the first intrinsic semiconductor layer, and the electroplating anode is placed in the electroplating solution, so that the solar cell body is electroplated in horizontal transmission, so that the first metal area and the second metal area of ​​the solar cell body form a first electrode and a second electrode respectively.

3. The method for manufacturing a back contact solar cell according to claim 1, characterized in that: The first intrinsic semiconductor layer of the solar cell body is facing upward and connected to an electroplating cathode; the first metal region and the second metal region of the solar cell body are facing downward and contacted with an electroplating solution having an electroplating anode; After the step of forming a first electrode and a second electrode correspondingly in the first metal area and the second metal area of ​​the solar cell body, the method further includes: Laying a protective layer on the side of the first electrode and the second electrode facing away from the substrate, wherein the protective layer covers the first electrode and the second electrode; forming a second passivation layer on a side of the first intrinsic semiconductor layer facing away from the substrate; The protective layer is removed.

4. The method for manufacturing a back contact solar cell according to claim 3, characterized in that: Before forming the second passivation layer on the side of the first intrinsic semiconductor layer away from the substrate, the method further includes: The surface of the first intrinsic semiconductor layer of the substrate is cleaned to remove oil stains, surface scratches and metal pollution.

5. The method for manufacturing a back contact solar cell according to claim 1, characterized in that: The first doping layer and the second doping layer are formed on the side of the second intrinsic semiconductor layer away from the substrate, and the first passivation layer is laid on the side of the first doping layer and the second doping layer away from the substrate, so that the first passivation layer exposes the first metal region of the first doping layer and the second metal region of the second doping layer; The steps of obtaining a solar cell body include: forming a first doping layer and a second doping layer which are spaced apart and have opposite doping types on a side of the second intrinsic semiconductor layer away from the substrate; Laying a first passivation film layer on the side of the first doped layer and the second doped layer away from the substrate, so that the first passivation film layer covers the first doped layer and the second doped layer; The first passivation film layer is patterned to remove regions of the first passivation film layer corresponding to the first metal region and the second metal region to obtain a first passivation layer exposing the first metal region of the first doped layer and the second metal region of the second doped layer.

6. The method for manufacturing a back contact solar cell according to claim 1, characterized in that: The step of forming a first doping layer and a second doping layer which are spaced apart and have opposite doping types on a side of the second intrinsic semiconductor layer away from the substrate comprises: forming a first doped film layer and a first silicate glass film layer on a surface of the second intrinsic semiconductor layer facing away from the substrate; Patterning the first silicate glass film layer to remove the first silicate glass film layer located in the second region of the second surface; Etching the first doped film layer to remove the first doped film layer located in the second region of the second surface, thereby obtaining a first doped layer located in the first region of the second surface; Laying a second doped film layer and a second silicate glass film layer on a side of the first doped layer away from the substrate, so that the second doped film layer covers the first doped layer and the first intrinsic semiconductor layer located in the second region of the second surface; and the second silicate glass film layer covers the second doped film layer; patterning the second silicate glass film layer to remove the second silicate glass film layer located in the first area of ​​the second surface; The second doped film layer is etched to remove the first doped film layer located in the first region of the second surface, thereby obtaining a second doped layer located in the second region of the second surface.

7. The method for manufacturing a back contact solar cell according to claim 3, characterized in that: The material of the protective layer includes ink.

8. The back contact solar cell according to claim 1, characterized in that: The thickness of the first intrinsic semiconductor layer is greater than the thickness of the second intrinsic semiconductor layer.

9. A back contact solar cell, characterized in that: The back-contact solar cell is manufactured by the method for manufacturing a back-contact solar cell according to any one of claims 1 to 8.

10. A photovoltaic module, characterized in that: Comprising the back-contact solar cell as described in claim 9.

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