Terahertz phase shifter based on rectangular waveguide SSPP mode switching

Abstract

The invention belongs to the technical field of electromagnetic functional devices, and discloses a rectangular waveguide SSPP mode switching-based terahertz phase shifter, which comprises an input rectangular waveguide, a periodic rectangular waveguide structure, a diode regulation and control microstructure chip, a non-regulation and control microstructure chip and an output rectangular waveguide, the input rectangular waveguide plays a role in inputting terahertz waves and is connected with one end of the periodic rectangular waveguide structure; one part of the periodic rectangular waveguide structure is a straight-through rectangular waveguide, the other part of the periodic rectangular waveguide structure is a periodically arranged micro-opening rectangular cavity, and the diode regulation and control microstructure chip comprises a chip substrate, a grounding metal block, a non-grounding metal block, a high-impedance feed line, a low-impedance feed metal block and a diode; the non-regulation and control microstructure chip comprises a non-regulation and control chip substrate, a non-regulation and control grounding metal block and a non-regulation and control non-grounding metal block; and the diode regulation and control microstructure chip and the non-regulation and control microstructure chip are respectively embedded into two micro-opening rectangular cavities which are symmetrically distributed on two long sides of the straight-through rectangular waveguide.

Description

Technical Field

[0001] The present invention belongs to but is not limited to the technical field of electromagnetic functional devices, and in particular relates to a terahertz phase shifter based on rectangular waveguide SSPP mode switching. Background Art

[0002] Terahertz waves are electromagnetic waves with a frequency range of 0.1THz to 10THz, which is between microwave, millimeter wave and light wave. Various types of terahertz devices are still underdeveloped. However, terahertz dynamically adjustable phase shift devices have great potential value in the fields of terahertz phase shift keying communication systems, terahertz high-resolution imaging systems, terahertz phased array radar systems, etc.

[0003] Surface plasmon polariton (SPP) is a hybrid electromagnetic mode that is generated by the strong coupling of electromagnetic oscillations and electronic oscillations in materials and is highly localized at the interface between two media. Natural materials can generally efficiently excite surface plasmon modes in the infrared / optical frequency bands, but it is difficult to achieve surface plasmon modes in lower frequency bands such as microwaves, millimeter waves, and terahertz. The use of periodic structures can achieve modes with electromagnetic characteristics similar to surface plasmons in lower frequency bands such as millimeter waves and terahertz. They are called artificial surface plasmons (SSPP), or pseudo surface plasmons, which have the characteristics of high-frequency asymptotic cutoff.

[0004] In wireless communications, phase shift keying is used to encode information, sending information by changing the phase of the carrier wave and receiving it with coherent demodulation. Terahertz wireless communications can effectively improve the transmission rate and increase noise resistance by using this method, and the key lies in the terahertz phase shifter. Mechanical traditional radars rotate the antenna to scan in multiple directions, which limits the scanning speed and has a bulky structure. Phased array radars can control the beam direction without mechanical movement and are suitable for high-speed target detection. Terahertz phased array radars are small in size, fast in speed, narrow in beam, and highly integrated, but their core, the terahertz phase shifter, remains to be developed.

[0005] In view of the above analysis, the technical problems that need to be solved urgently in the prior art are:

[0006] (1) Existing control devices using SSPP are limited to microwave and millimeter wave bands and are on-chip devices. In the terahertz band, rectangular waveguides are usually used for module connection, and on-chip devices require additional transition structures.

[0007] (2) The existing terahertz phase shifting technology solutions are still traditional, and reconfigurable periodic terahertz phase shifters have yet to be developed.

[0008] (3) The existing terahertz phase shifting technology has a small bandwidth, large insertion loss and low linearity when shifting phase over a large range. Summary of the invention

[0009] In view of the problems existing in the prior art, the present invention provides a terahertz phase shifter based on rectangular waveguide SSPP mode switching, which can realize dynamic terahertz phase shift, and can adjust the number of periods of the waveguide SSPP structure to realize the control of the phase shift range. The terahertz phase shifter based on rectangular waveguide SSPP mode switching has a reconfigurable periodic characteristic, and has low insertion loss, low reflection coefficient, large working bandwidth, and high linearity of phase shift.

[0010] The present invention is implemented as follows: a terahertz phase shifter based on rectangular waveguide SSPP mode switching includes an input rectangular waveguide, a periodic rectangular waveguide structure, a diode-controlled microstructure chip, a non-controlled microstructure chip, and an output rectangular waveguide.

[0011] The input rectangular waveguide plays the role of inputting terahertz waves and is connected to one end of the periodic rectangular waveguide structure. The other end of the periodic rectangular waveguide structure is connected to the output rectangular waveguide to output the phase-shifted terahertz waves. The diode-controlled microstructure chip and the non-controlled microstructure chip are embedded in the periodic rectangular waveguide structure.

[0012] The periodic rectangular waveguide structure is divided into two parts. One part is a straight-through rectangular waveguide, whose long and short side dimensions are the same as those of the input rectangular waveguide and the output rectangular waveguide. The other part is a periodically arranged micro-opening rectangular cavity, one end of which is connected to the long side of the straight-through rectangular waveguide and is symmetrically distributed on the two long sides of the straight-through rectangular waveguide. A tiny sheet-shaped opening is set at the other end of the micro-opening rectangular cavity, and the opening is located in the middle of the long side of the waveguide to facilitate the feeding of electrical control signals.

[0013] The diode-controlled microstructure chip includes a chip substrate, a grounded metal block, an ungrounded metal block, a high-impedance feed line, a low-impedance feed metal block, and a diode. The chip substrate is embedded in a tiny sheet-shaped opening in the middle of the long side of the micro-opening rectangular cavity, and its edge is flush with the edge of the straight-through rectangular waveguide. All metal structures are placed on the chip substrate. The grounded metal block is flush with the edge of the straight-through rectangular waveguide, one end of which contacts the waveguide wall for grounding, and the other end contacts the cathode of the diode. The ungrounded metal block is flush with the edge of the straight-through rectangular waveguide, one end of which contacts the anode of the diode, and the other end does not contact the waveguide wall and is connected to the high-impedance feed line. The high-impedance feed line is connected to the low-impedance feed metal block, which plays the role of inputting a voltage control signal to the diode. The low-impedance feed metal block is close to the edge of the tiny sheet-shaped opening, which is convenient for connecting an external feeding circuit.

[0014] The non-regulated microstructure chip includes a non-regulated chip substrate, a non-regulated grounded metal block, and a non-regulated ungrounded metal block, wherein the positions and sizes of the non-regulated chip substrate, the non-regulated grounded metal block, and the non-regulated ungrounded metal block are the same as those of the chip substrate, the grounded metal block, and the ungrounded metal block on the corresponding diode regulated microstructure chip.

[0015] The diode-controlled microstructure chip and the non-controlled microstructure chip are respectively embedded in two micro-opening rectangular cavities symmetrically distributed on the two long sides of the straight rectangular waveguide. The diode-controlled microstructure chip and the non-controlled microstructure chip are regularly arranged in a centrally symmetrical manner with the period of the periodic rectangular waveguide structure, forming an SSPP electromagnetic mode structure.

[0016] Furthermore, the working principle of the terahertz phase shifter based on rectangular waveguide SSPP mode switching is:

[0017] In the periodic rectangular waveguide structure, the diode-controlled microstructure chip and the non-controlled microstructure chip are arranged regularly. The diode connection and disconnection states are determined by the input voltage of the feeding structure, which determines whether the terahertz wave can enter the micro-opening rectangular cavity during the transmission process, thereby reconstructing different propagation structures, including SSPP mode propagation structure and high-pass filter structure. Since the SSPP mode propagation structure has a low-pass characteristic, it has a phase delay effect with the high-pass filter structure, thereby realizing the movement of the terahertz wave phase.

[0018] Furthermore, the straight-through rectangular waveguide in the periodic rectangular waveguide structure can be extended to accommodate more micro-opening rectangular cavities; the size, period interval length, and number of periods of the micro-opening rectangular cavity can be adjusted to adjust the operating frequency and the phase shift caused by switching the propagation structure form.

[0019] Furthermore, the sizes of the metal structures on the diode-regulated microstructure chip and the non-regulated microstructure chip are adjustable to adjust the insertion loss and phase shift caused by switching the propagation structure form.

[0020] Furthermore, the chip substrate material can be a commercial PCB board, silicon, quartz, gallium arsenide, silicon carbide and other semiconductor materials.

[0021] Furthermore, the metal materials used in the diode-regulated microstructure chip and the non-regulated microstructure chip may be high-conductivity metals such as aluminum, copper, silver, gold, and platinum.

[0022] Furthermore, the diode is a Schottky diode, a terahertz PIN diode, or a high-mobility planar diode.

[0023] In combination with the above technical solutions and the technical problems solved, the advantages and positive effects of the technical solutions to be protected by the present invention are as follows:

[0024] First, the beneficial effects of the present invention are:

[0025] (1) In view of the problem that there are few SSPP control technology solutions and that existing on-chip devices require additional transition structures to be designed, the present invention proposes a terahertz phase shifting method based on rectangular waveguide SSPP mode switching, which provides a basic solution for rectangular waveguide SSPP phase shifting devices, and ultimately realizes a low insertion loss, high linearity terahertz phase shifter that is easy to connect with other terahertz modules.

[0026] (2) The straight-through rectangular waveguide in the periodic rectangular waveguide structure of the present invention can be extended, and the size, period interval length, and period number of the micro-opening rectangular cavity are adjustable, thereby realizing a reconfigurable phase-shifting structure and facilitating function expansion.

[0027] (3) The processing technology of the present invention is mature. For rectangular waveguides, it can be realized by machine tool processing and laser etching. For diode control microstructure chips and non-control microstructure chips, it can be processed by vapor deposition, electron beam exposure, and metal evaporation. It has good application potential and prospects.

[0028] Second, the technical solution of the present invention fills the technical gap in the industry at home and abroad: the SSPP waveguide phase control solution is proposed for the first time in the present invention, which solves the problem that there are few existing SSPP control technical solutions and that existing on-chip devices require additional transition structure design. The method provided by the present invention realizes a low insertion loss and high linearity terahertz phase shifter, providing an advanced solution for terahertz radar and beam control systems.

[0029] Third, the terahertz phase shifter based on rectangular waveguide SSPP (surface plasmon) mode switching of the present invention provides significant technical progress in industrial applications. The structure of traditional terahertz wave phase shifters often has limitations in size control, precise phase shift adjustment and low loss control, and it is difficult to adapt to the needs of high-precision terahertz applications. The present invention introduces a periodic rectangular waveguide structure and embeds control and non-control microstructure chips in it to achieve high-precision and low-loss adjustment of the terahertz wave phase. The following are the key technical problems solved by this technical solution in industrial applications and its significant progress:

[0030] 1. Accurately adjust the phase shift performance: The present invention uses a diode-controlled microstructure chip embedded in a rectangular waveguide and combines it with the SSPP mode to achieve phase shift control of terahertz waves. The traditional structure is relatively limited in the accuracy of phase shift adjustment, while the present invention can fine-tune the control signal of the diode to achieve a more accurate phase shift control effect, which is suitable for high-precision applications.

[0031] 2. Reduce transmission loss: The use of micro-opening rectangular cavity and periodic waveguide structure can effectively reduce the loss of terahertz waves in transmission. Compared with traditional terahertz phase shifters, the present invention can significantly reduce transmission losses, allowing terahertz waves to maintain higher signal strength and integrity during long-distance transmission, thereby optimizing transmission efficiency.

[0032] 3. Enhanced system integration: By embedding the diode control chip and the non-control chip in the waveguide structure, the present invention has a compact design, is easy to integrate, and is convenient to combine with other terahertz devices, thus improving the system integration. In particular, for miniaturization and modularization application requirements, it can reduce the complexity of the external control circuit and facilitate industrial production and application.

[0033] 4. Improve anti-interference ability: Through diode regulation of microstructure chips and periodic waveguide structures, the present invention realizes electromagnetic field control of SSPP mode. This design greatly improves anti-interference ability. This feature is particularly important for terahertz communication and sensing applications in complex environments, ensuring signal stability and accuracy.

[0034] 5. Scalability and flexibility: Through adjustable electrical control signals, the present invention achieves flexible frequency response within the adjustment range, which can meet the needs of different application scenarios, including terahertz radar, imaging, communication and sensing fields. Compared with traditional fixed frequency phase shifters, the present invention is more suitable for multifunctional terahertz application scenarios.

[0035] 6. Promote the industrial application of terahertz: The high-precision, low-loss phase shifter design of the present invention provides a better choice for the application of terahertz technology in industrial detection, non-contact measurement and communication. The significant improvement in performance of this solution will help promote the wider application of terahertz technology in the industry, fill the gaps in existing technologies, and lay the foundation for the future development of terahertz technology.

[0036] Through the above technological advances, the present invention not only surpasses the existing technology in terms of accuracy and performance, but also significantly optimizes the industrial application value of terahertz phase shifters, and provides a reliable solution for the practical application of terahertz waves in high-precision communications, detection, imaging and other fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 is an overall structural diagram of a terahertz phase shifter based on rectangular waveguide SSPP mode switching provided by an embodiment of the present invention;

[0038] Figure 2 is a side schematic diagram of a terahertz phase shifter based on rectangular waveguide SSPP mode switching provided by an embodiment of the present invention;

[0039] Figure 3 Schematic diagram of a diode control microstructure chip provided by an embodiment of the present invention;

[0040] Figure 4 is a schematic diagram of a non-regulated microstructure chip provided by an embodiment of the present invention;

[0041] Figure 5 is a schematic diagram of an S parameter curve when all diodes are connected, provided by an embodiment of the present invention;

[0042] Figure 6 is a schematic diagram of an S parameter curve when all diodes are disconnected provided by an embodiment of the present invention;

[0043] Figure 7 is a schematic diagram of a phase curve provided by an embodiment of the present invention;

[0044] In the figure: A, input rectangular waveguide; B, periodic rectangular waveguide structure; C, diode-controlled microstructure chip; D, non-controlled microstructure chip; E, output rectangular waveguide; B1, straight-through rectangular waveguide; B2, micro-opening rectangular cavity; C1, chip substrate; C2, grounded metal block; C3, ungrounded metal block; C4, high-impedance feeding line; C5, low-impedance feeding metal block; C6, diode; D1, non-controlled chip substrate; D2, non-controlled grounded metal block; D3, non-controlled ungrounded metal block. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0046] The terahertz phase shifter based on rectangular waveguide SSPP mode switching provided in an embodiment of the present invention comprises an input rectangular waveguide A, a periodic rectangular waveguide structure B, a diode-controlled microstructure chip C, a non-controlled microstructure chip D, and an output rectangular waveguide E.

[0047] The input rectangular waveguide A plays the role of inputting terahertz waves, and is connected to one end of the periodic rectangular waveguide structure B. The other end of the periodic rectangular waveguide structure B is connected to the output rectangular waveguide E to output the phase-shifted terahertz wave. The diode-controlled microstructure chip C and the non-controlled microstructure chip D are embedded in the periodic rectangular waveguide structure B.

[0048] The periodic rectangular waveguide structure B is divided into two parts. One part is a straight-through rectangular waveguide B1, whose long and short side dimensions are the same as those of the input rectangular waveguide A and the output rectangular waveguide E. The other part is a periodically arranged micro-opening rectangular cavity B2, one end of which is connected to the long side of the straight-through rectangular waveguide B1, and is symmetrically distributed on the two long sides of the straight-through rectangular waveguide B1. A tiny sheet-shaped opening is set at the other end of the micro-opening rectangular cavity B2, and the opening is located in the middle of the long side of the waveguide to facilitate the feeding of electrical control signals.

[0049] The diode-controlled microstructure chip C includes a chip substrate C1, a grounded metal block C2, an ungrounded metal block C3, a high-impedance feed line C4, a low-impedance feed metal block C5, and a diode C6. The chip substrate C1 is embedded in a tiny sheet-shaped opening in the middle of the long side of the micro-opening rectangular cavity B2, and its edge is flush with the edge of the straight-through rectangular waveguide B1. All metal structures are placed on the chip substrate C1. The grounded metal block C2 is flush with the edge of the straight-through rectangular waveguide B1, one end of which contacts the waveguide wall for grounding, and the other end contacts the cathode of the diode C6. The ungrounded metal block C3 is flush with the edge of the straight-through rectangular waveguide B1, one end of which contacts the anode of the diode C6, and the other end does not contact the waveguide wall and is connected to the high-impedance feed line. The high-impedance feed line C4 is connected to the low-impedance feed metal block C5, which plays the role of inputting a voltage control signal to the diode C6. The low-impedance feed metal block C5 is close to the edge of the tiny sheet-shaped opening, which is convenient for connecting an external feeding circuit.

[0050] The non-regulated microstructure chip D includes a non-regulated chip substrate D1, a non-regulated grounded metal block D2, and a non-regulated ungrounded metal block D3. The positions and sizes of the non-regulated chip substrate D1, the non-regulated grounded metal block D2, and the non-regulated ungrounded metal block D3 are the same as those of the chip substrate C1, the grounded metal block C2, and the ungrounded metal block C3 on the corresponding diode regulated microstructure chip C.

[0051] The diode-controlled microstructure chip C and the non-controlled microstructure chip D are respectively embedded in two micro-opening rectangular cavities B2 that are symmetrically distributed on the two long sides of the straight rectangular waveguide B1. The diode-controlled microstructure chip C and the non-controlled microstructure chip D are regularly arranged in a centrally symmetrical manner with the period of the periodic rectangular waveguide structure B, forming an SSPP electromagnetic mode structure.

[0052] The working principle of the terahertz phase shifter based on rectangular waveguide SSPP mode switching is:

[0053] In the periodic rectangular waveguide structure B, the diode-controlled microstructure chip C and the non-controlled microstructure chip D are arranged regularly. The diode connection and disconnection states are determined by the input voltage of the feeding structure, thereby determining whether the terahertz wave can enter the micro-opening rectangular cavity B2 during the transmission process, thereby reconstructing different propagation structures, including the SSPP mode propagation structure and the high-pass filter structure. Since the SSPP mode propagation structure has a low-pass characteristic, it has a phase delay effect with the high-pass filter structure, thereby realizing the movement of the terahertz wave phase.

[0054] The straight-through rectangular waveguide B1 in the periodic rectangular waveguide structure B can be extended to accommodate more micro-opening rectangular cavities B2; the size, period interval length, and number of periods of the micro-opening rectangular cavity B2 are adjustable to adjust the operating frequency and the phase shift caused by switching the propagation structure form.

[0055] The sizes of the metal structures on the diode-controlled microstructure chip C and the non-controlled microstructure chip D are adjustable to adjust the insertion loss and phase shift caused by switching the propagation structure form.

[0056] The chip substrate C1 material can be a commercial PCB board, silicon, quartz, gallium arsenide, silicon carbide and other semiconductor materials.

[0057] The metal materials used in the diode-controlled microstructure chip C and the non-controlled microstructure chip D may be high-conductivity metals such as aluminum, copper, silver, gold, and platinum.

[0058] The diodes are Schottky diodes, terahertz PIN diodes, and high-mobility planar diodes.

[0059] Example:

[0060] like Figure 1 As shown, the terahertz wave is input through the input rectangular waveguide A, reaches the periodic rectangular waveguide structure B, undergoes phase shift in the periodic rectangular waveguide structure B, and is output by the output rectangular waveguide E.

[0061] like Figure 1 , Figure 2 As shown, the straight rectangular waveguide B1 in the periodic rectangular waveguide structure B has a long side of 0.711 mm and a short side of 0.356 mm, and its size is the same as that of the input rectangular waveguide and the output rectangular waveguide; the micro-opening rectangular cavity B2 has a length of 0.711 mm, a width of 0.26 mm, and a depth of 0.28 mm, which is connected to the long side of the straight rectangular waveguide B1 and is symmetrically distributed on the two long sides of the straight rectangular waveguide B1; the other end of the micro-opening rectangular cavity B2 that is not connected to the straight rectangular waveguide B1 has a tiny sheet-like opening for feeding in electrical control signals and placing a diode-controlled microstructure chip C and a non-controlled microstructure chip D. The interval between each period of the micro-opening rectangular cavity B2 is 0.11 mm.

[0062] like Figure 3 As shown, in the diode-controlled microstructure chip C, the micro-opening rectangular cavity B2 is made of quartz material, which is embedded in the tiny sheet-shaped opening in the middle of the long side of the micro-opening rectangular cavity, and its edge is flush with the edge of the straight-through rectangular waveguide. The grounded metal block C2 has a size of 118μm×108μm, which is flush with the edge of the straight-through rectangular waveguide, one end of which contacts the waveguide wall for grounding, and the other end contacts the cathode of the diode C6. The ungrounded metal block C3 has a size of 118μm×108μm, which is flush with the edge of the straight-through rectangular waveguide, one end of which contacts the anode of the diode C6, and the other end does not contact the waveguide wall and is connected to the high-impedance feed line C4. The high-impedance feed line C4 has a size of 230μm×10μm, which is connected to the low-impedance feed metal block C5, which plays the role of inputting a voltage control signal to the diode. The low-impedance feed metal block C5 has a size of 90μm×80μm. The low-impedance feed metal block is close to the edge of the tiny sheet-shaped opening, which is convenient for connecting an external feeding circuit.

[0063] like Figure 4 As shown, the positions and sizes of the non-regulated chip substrate D1, non-regulated grounded metal block D2, and non-regulated ungrounded metal block D3 of the non-regulated microstructure chip D are the same as the chip substrate, grounded metal block, and ungrounded metal block on the corresponding diode regulated microstructure chip.

[0064] like Figure 1 As shown, the diode-controlled microstructure chip and the non-controlled microstructure chip are respectively embedded in two micro-opening rectangular cavities that are symmetrically distributed on the two long sides of the straight-through rectangular waveguide. The diode-controlled microstructure chip and the non-controlled microstructure chip are regularly arranged centrally symmetrically with the period of the periodic rectangular waveguide structure. That is, on the first group of two symmetrical micro-opening rectangular cavities, the upper part is embedded with the diode-controlled microstructure chip, and the lower part is embedded with the non-controlled microstructure chip; on the second group of two symmetrical micro-opening rectangular cavities, the upper part is embedded with the non-controlled microstructure chip, and the lower part is embedded with the diode-controlled microstructure chip; according to this rule, the arrangement continues until the fifth group.

[0065] The diode used in this embodiment is a Schottky diode.

[0066] The metal material used in this embodiment is gold.

[0067] At this time, we input voltage through the feeding structure and control all five diodes at the same time, switching their connection and disconnection states. Figure 5 As shown in the figure, when the five diodes are connected, a SSPP mode propagation structure is formed, which has low-pass characteristics, a cut-off frequency close to 350GHz, an insertion loss of less than 1dB in the range of 300-340GHz, and a reflection coefficient of less than -9.8dB. Figure 6As shown in the figure, when the five diodes are disconnected, a high-pass filter structure is formed, with a cut-off frequency close to 280 GHz, an insertion loss of less than 1.1 dB in the range of 300-340 GHz, and a reflection coefficient of less than -9.3 dB. Figure 7 As shown, the switching of the two transmission structures leads to a phase shift, achieving a 180° phase shift in the range of 300-340 GHz.

[0068] The results show that the terahertz phase shifter based on rectangular waveguide SSPP mode switching can achieve a 180° phase shift with broadband, high linearity, low insertion loss and low reflection coefficient. The straight-through rectangular waveguide in the periodic rectangular waveguide structure can be extended to accommodate more micro-opening rectangular cavities; at the same time, different operating frequencies and phase shifts can be achieved by adjusting the size of the micro-opening rectangular cavity, the period interval length and the number of periods.

[0069] The present invention is a terahertz phase shifter based on rectangular waveguide SSPP mode switching, which belongs to a waveguide type device. The phase shifter is combined with a terahertz source, a waveguide antenna, a signal processing unit and a control system to realize beamforming, and to transmit signals in a directional manner to users during signal transmission, thereby improving signal transmission efficiency, rate and accuracy. At the same time, combined with a differential network, a waveguide antenna, a data acquisition and processing unit, it can realize three-dimensional radar imaging with phase information, or radar detection of dynamic targets. Due to the use of terahertz waves, its accuracy is much greater than that of microwave and millimeter wave radars, and it has great application value.

[0070] In the description of the present invention, unless otherwise specified, "plurality" means two or more than two; the orientations or positional relationships indicated by the terms "upper", "lower", "left", "right", "inner", "outer", "front end", "rear end", "head", "tail", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0071] The above description is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Any modifications, equivalent substitutions and improvements made by any technician familiar with the technical field within the technical scope disclosed by the present invention and within the spirit and principle of the present invention should be covered by the protection scope of the present invention.

Claims

1. A terahertz phase shifter based on rectangular waveguide SSPP mode switching, It is characterized in that It includes an input rectangular waveguide, a periodic rectangular waveguide structure, a diode-controlled microstructure chip, a non-controlled microstructure chip, and an output rectangular waveguide; wherein: The input rectangular waveguide is used for inputting terahertz waves and is connected to one end of the periodic rectangular waveguide structure; The other end of the periodic rectangular waveguide structure is connected to the output rectangular waveguide for outputting the phase-shifted terahertz wave; The periodic rectangular waveguide structure comprises a straight-through rectangular waveguide and periodically arranged micro-opening rectangular cavities, wherein the long side and short side dimensions of the straight-through rectangular waveguide are the same as those of the input rectangular waveguide and the output rectangular waveguide; One end of the micro-opening rectangular cavity is connected to the long side of the straight-through rectangular waveguide and is symmetrically distributed on the two long sides of the straight-through rectangular waveguide, and the other end is provided with a tiny sheet-shaped opening for feeding an electrical control signal; The diode-controlled microstructure chip and the non-controlled microstructure chip are respectively embedded in micro-opening rectangular cavities symmetrically distributed on two long sides of the straight-through rectangular waveguide.

2. The terahertz phase shifter based on rectangular waveguide SSPP mode switching as claimed in claim 1, It is characterized in that The diode regulation microstructure chip comprises a chip substrate, a grounded metal block, an ungrounded metal block, a high-impedance feed line, a low-impedance feed metal block and a diode; The chip substrate is embedded in the tiny sheet-shaped opening of the micro-opening rectangular cavity, and its edge is flush with the edge of the straight-through rectangular waveguide; One end of the grounded metal block touches the waveguide wall and is grounded, and the other end touches the cathode of the diode; One end of the ungrounded metal block is in contact with the anode of the diode, and the other end is connected to the high impedance feeder line; The high impedance feed line is connected to the low impedance feed metal block for inputting a voltage control signal to the diode, and the low impedance feed metal block is close to the edge of the tiny sheet opening for easy connection to an external feed circuit; The non-regulated microstructure chip includes a non-regulated chip substrate, a non-regulated grounded metal block and a non-regulated ungrounded metal block, and their positions and sizes are the same as the chip substrate, the grounded metal block and the ungrounded metal block on the diode regulated microstructure chip; the diode regulated microstructure chip and the non-regulated microstructure chip are arranged in a centrally symmetrical manner with the periodicity of the periodic rectangular waveguide structure to form an SSPP electromagnetic mode structure.

3. The terahertz phase shifter based on rectangular waveguide SSPP mode switching as claimed in claim 1, It is characterized in that The working principle of the terahertz phase shifter based on rectangular waveguide SSPP mode switching is: In the periodic rectangular waveguide structure, the diode-controlled microstructure chip and the non-controlled microstructure chip are arranged regularly. The connection and disconnection states of the diodes are determined by the input voltage of the feeding structure, thereby determining whether the terahertz wave can enter the micro-opening rectangular cavity during transmission, thereby reconstructing different propagation structures, including the SSPP mode propagation structure and the high-pass filtering structure. Since the SSPP mode propagation structure has a low-pass characteristic, it has a phase delay effect with the high-pass filtering structure, thereby realizing the phase shift of the terahertz wave.

4. The terahertz phase shifter based on rectangular waveguide SSPP mode switching as claimed in claim 1, It is characterized in that The straight-through rectangular waveguide in the periodic rectangular waveguide structure can be extended to accommodate more micro-opening rectangular cavities; the size, period interval length, and period number of the micro-opening rectangular cavity are adjustable to adjust the operating frequency and the phase shift caused by switching the propagation structure form.

5. The terahertz phase shifter based on rectangular waveguide SSPP mode switching as claimed in claim 1, It is characterized in that The sizes of the metal structures on the diode-regulated microstructure chip and the non-regulated microstructure chip are adjustable to adjust the insertion loss and phase shift caused by switching the propagation structure form.

6. The terahertz phase shifter based on rectangular waveguide SSPP mode switching as claimed in claim 1, It is characterized in that The chip substrate material can be commercial PCB board, silicon, quartz, gallium arsenide, and silicon carbide.

7. The terahertz phase shifter based on rectangular waveguide SSPP mode switching as claimed in claim 1, It is characterized in that The metal materials used for the diode-controlled microstructure chip and the non-controlled microstructure chip may be aluminum, copper, silver, gold, or platinum.

8. The terahertz phase shifter based on rectangular waveguide SSPP mode switching as claimed in claim 1, It is characterized in that The diodes are Schottky diodes, terahertz PIN diodes, and high-mobility planar diodes.

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