1 / N mode anti-SIW filter based on glass substrate technology

Abstract

The invention provides a glass substrate technology-based 1 / N mode anti-SIW filter, which comprises an input port, an output port and a body, and is characterized in that the body comprises a first metal layer, a second metal layer and a glass substrate arranged between the first metal layer and the second metal layer, and a TGV structure penetrates through the glass substrate; at least two 1 / N-mode anti-SIW filtering resonant cavities and two symmetrical transition structures are formed on the body, and the 1 / N-mode anti-SIW filtering resonant cavities are formed by enclosing a metal plate and a second metal layer on a part of the first metal layer and a TGV structure located on the metal plate, and then are respectively connected with the input port and the output port through the transition structures. The TGV structure located on the metal plate serves as a 1 / N mode coupling TGV.

Description

Technical Field

[0001] The present invention relates to the technical field of filters, and in particular to a 1 / N mode inversion SIW filter based on glass substrate technology. Background Art

[0002] LC filter based on glass substrate technology uses TGV and metal to construct capacitors and inductors on the substrate to achieve filtering requirements. However, the LC filter process is often complicated, involving a multi-layer structure and a cumbersome design process. It can only achieve good performance below 10GHz, and is affected by the characteristics of the capacitors and inductors themselves. The closer to the high frequency, the worse the performance. Summary of the invention

[0003] The present invention provides a 1 / N mode inverse SIW filter based on glass substrate technology, which has a compact and simple structure and involves only a single-layer design, can maintain good performance above 10GHz, is easy to integrate, and has flexible design.

[0004] In order to solve the above technical problems, the present invention provides a 1 / N mode inversion SIW filter based on glass substrate technology, comprising an input port, an output port, and a body, wherein the body comprises a first metal layer, a second metal layer, and a glass substrate disposed between the first metal layer and the second metal layer, wherein a TGV structure runs through the glass substrate;

[0005] At least two 1 / N mode inverse SIW filter resonant cavities and two symmetrical transition structures are formed on the body. The 1 / N mode inverse SIW filter resonant cavity is formed by enclosing a metal plate on part of the first metal layer and the second metal layer and a TGV structure located on the metal plate, and is then connected to the input port and the output port respectively through the transition structure. The TGV structure located on the metal plate serves as a 1 / N mode coupling TGV.

[0006] In some embodiments, the 1 / N mode coupling TGV is located on a side of the filter resonant cavity of the 1 / N mode anti-SIW close to the transition structure.

[0007] In some embodiments, the filtering resonant cavity of the 1 / N mode anti-SIW includes a 1 / N mode coupling electric wall and the 1 / N mode coupling TGV, and there is electrical coupling between the 1 / N mode coupling electric wall and two transition structures.

[0008] In some of the embodiments, there is magnetic coupling between the 1 / N mode coupling TGVs in at least two 1 / N mode anti-SIW filters, and the electromagnetic hybrid coupling introduces a zero point.

[0009] In some of the embodiments, there is source-load coupling between the two transition structures, introducing another zero point.

[0010] In some of the embodiments, the filter resonant cavities of the at least two 1 / N mode anti-SIWs introduce at least two poles.

[0011] In some embodiments, the first metal layer includes a plurality of metal plates and metal wires, and the metal plates are connected by metal wires.

[0012] In some embodiments, the second metal layer is a solid metal plate.

[0013] In some embodiments, the metal plate forming the 1 / N mode inverse SIW filter resonant cavity is fan-shaped or triangular.

[0014] In some embodiments, the filter resonant cavity of the 1 / N mode inverse SIW is disposed on one side or both sides of the transition structure.

[0015] Compared with the prior art, the beneficial effects of the present invention are: utilizing the advantage of low dielectric loss of glass, forming a 1 / N mode inverse SIW filter resonant cavity through a TGV structure and a metal plate, and forming an equivalent filter structure without using any inductor or capacitor structure, thereby overcoming the disadvantage that the performance becomes worse as it approaches high frequency due to the characteristics of the capacitor and inductor themselves, and being able to maintain good performance above 10 GHz and still maintain good out-of-band suppression at about three times the frequency. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the overall structure of the filter of the present invention;

[0017] Figure 2 It is a schematic diagram of the filter layered structure of the present invention;

[0018] Figure 3 A top view of the filter structure of the present invention;

[0019] Figure 4 A topological diagram corresponding to the filter structure of the present invention;

[0020] Figure 5 It is a schematic diagram of simulated S parameters of the filter of the present invention;

[0021] Figure 6 Schematic diagram of the overall structure of the filter with four resonant cavities;

[0022] Figure 7 Schematic diagram of the overall structure of the filter with the resonant cavity located on both sides of the transition structure.

[0023] Reference numerals:

[0024] 1. First metal layer; 2. Second metal layer; 3. Glass substrate 3; 4. TGV structure; 5. Input / output port; 6. Transition structure 6; 7. Fan-shaped metal plate; 8. 1 / N mode coupled TGV. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention; it is obvious that the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments, and all other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making creative work are within the scope of protection of the present invention.

[0026] Reference Figure 1-7 This embodiment provides a 1 / N mode inverse SIW (substrate integrated waveguide) filter based on a glass substrate 3 process, including an input port, an output port, and a body. The body includes a first metal layer 1 and a second metal layer 2. The first metal layer 1 includes a plurality of metal plates and metal wires, and the metal plates are connected by metal wires. The second metal layer 2 is a whole layer of metal plates.

[0027] It also includes a glass substrate 3 arranged between the first metal layer 1 and the second metal layer 2. The glass substrate 3 runs through a TGV structure 4. The functions of the TGV structure 4 in the filter are different. The TGV (Through Glass Via) refers to a glass through hole running through the glass substrate.

[0028] In this embodiment, part of the first metal layer 1 and the second metal layer 2 of the body and the TGV structure enclose two 1 / N mode reverse SIW filter resonant cavities. Specifically, the two fan-shaped metal plates 7 in the first metal layer 1 and the second metal layer 2, and the TGV structure located on the two fan-shaped metal plates 7 enclose two fan-shaped 1 / N mode reverse SIW filter resonant cavities. As a simple alternative to this embodiment, the fan-shaped metal plate 7 can also be in a triangle or other shape.

[0029] The TGV structure located on the metal plate is used as a 1 / N mode coupling TGV 8, and the 1 / N mode coupling TGV 8 is located on one side of the filter resonant cavity of the fan-shaped 1 / N mode reverse SIW close to the transition structure 6. The body also includes two symmetrical filtering structures, and the filter resonant cavity of the 1 / N mode reverse SIW is respectively connected to the input / output port 5 through the transition structure 6.

[0030] In this embodiment, the 1 / N mode anti-SIW filter resonant cavity also includes a 1 / N mode coupling electric wall. The 1 / N mode anti-SIW filter resonant cavity includes a 1 / N mode coupling electric wall and the 1 / N mode coupling TGV8, and there is electrical coupling between the 1 / N mode coupling electric wall and the two transition structures 6. There is magnetic coupling between the 1 / N mode coupling TGV8 in at least two 1 / N mode anti-SIW filters, and electromagnetic hybrid coupling introduces a zero point. Specifically, Figure 3 As shown, in the overall structure, there is electrical coupling between the transition structure b and the 1 / N mode anti-SIW electric wall c, between the 1 / N mode anti-SIW electric wall c and the 1 / N mode anti-SIW electric wall f, and between the 1 / N mode anti-SIW electric wall f and the transition structure g. There is magnetic coupling between the 1 / N mode coupling TGVs (d and e), and the electromagnetic hybrid coupling introduces a zero point into the system. There is source-load coupling between the two transition structures 6, which introduces another zero point.

[0031] The two 1 / N mode inverse SIW filter resonant cavities each bring a pole to the system. Therefore, in the filter structure of this embodiment, a total of two zeros and two poles are introduced into the system. The signal transmission path of the filter is ab-cd-ef-gh.

[0032] like Figure 5 As shown in the figure, the horizontal axis represents the response frequency (unit: GHz), and the vertical axis represents the return loss and insertion loss of the filter (unit: dB). From the simulation S parameters of the filter, it can be seen that the filter designed in this embodiment has a minimum insertion loss of 1.20 dB in the band, a center frequency of 25.8 GHz, a 3dB passband of 23.942 GHz to 27.624 GHz, a bandwidth of 3.682 GHz, and a 3dB fractional bandwidth of about 14.27%. In the passband, the return loss is greater than 20 dB. It can also be seen from the S parameters that a transmission zero is generated on each side of the passband, and the two transmission zeros are respectively caused by electromagnetic hybrid coupling and source load coupling. The two poles in the band are caused by the 1 / N mode inverse SIW filter structure, and finally a single passband filter response of 2 poles (M1 to M2) + 2 zeros (M3 to M4) is realized. The center frequency of the embodiment of the present invention can be adjusted by modifying the resonant frequency of the resonant cavity, and it can be widely used in various fields.

[0033] like Figure 6 As shown, as a simple alternative to the present embodiment, the number of filter resonant cavities of the 1 / N mode reverse SIW is not limited to two or four parts. Of course, it can also be made into three parts or even more. The length and angle of the transition structure 6 can also be flexibly adjusted accordingly, and the size, depth and number of TGV can also be adjusted accordingly.

[0034] like

[0035] like Figure 7 As shown, as a simple alternative to the present embodiment, the filter resonant cavity of the 1 / N mode inverse SIW can be arranged on both sides of the transition structure 6 .

[0036] The 1 / N mode inverse SIW filter based on the glass substrate process of this embodiment can obtain good filtering response above 10GHz and has good out-of-band suppression. In addition, the filter obtained by this design method can flexibly adjust the order as needed, which can effectively reduce the size of the existing filter; it is easy to integrate and interconnect; it is suitable for mass production; the number and position of the zero poles of the filtering response are adjustable and controllable; and it can introduce good filtering effects above 10GHz and even in the millimeter wave band.

[0037] The above is only a preferred specific implementation of the present invention, but the design concept of the present invention is not limited to this. Any technician familiar with the technical field who uses this concept to make non-substantial changes to the present invention within the technical scope disclosed by the present invention shall be deemed to infringe the protection scope of the present invention.

Claims

1. A 1 / N mode inverse SIW filter based on glass substrate technology, characterized in that: It includes an input port, an output port, and a body, wherein the body includes a first metal layer, a second metal layer, and a glass substrate disposed between the first metal layer and the second metal layer, and the glass substrate runs through a TGV structure; At least two 1 / N mode inverse SIW filter resonant cavities and two symmetrical transition structures are formed on the body. The 1 / N mode inverse SIW filter resonant cavity is formed by enclosing a metal plate on part of the first metal layer and the second metal layer and a TGV structure located on the metal plate, and is then connected to the input port and the output port respectively through the transition structure. The TGV structure located on the metal plate serves as a 1 / N mode coupling TGV.

2. The 1 / N mode inversion SIW filter based on glass substrate technology according to claim 1, characterized in that: The 1 / N mode coupling TGV is located on a side of the filter resonant cavity of the 1 / N mode anti-SIW close to the transition structure.

3. The 1 / N mode inversion SIW filter based on glass substrate technology according to claim 1, characterized in that: The filtering resonant cavity of the 1 / N mode anti-SIW includes a 1 / N mode coupling electric wall and the 1 / N mode coupling TGV, and there is electric coupling between the 1 / N mode coupling electric wall and two transition structures.

4. The 1 / N mode inversion SIW filter based on glass substrate technology according to claim 2, characterized in that: There is magnetic coupling between the 1 / N mode coupling TGVs in at least two 1 / N mode anti-SIW filters, and electromagnetic hybrid coupling introduces a zero point.

5. The 1 / N mode inversion SIW filter based on glass substrate technology according to claim 3, characterized in that: There is source-load coupling between the two transition structures, which introduces another zero point.

6. The 1 / N mode inversion SIW filter based on glass substrate technology according to claim 1, characterized in that: The filter resonant cavities of the at least two 1 / N mode inverse SIWs introduce at least two poles.

7. The 1 / N mode inversion SIW filter based on glass substrate technology according to claim 1, characterized in that: The first metal layer includes a plurality of metal plates and metal wires, and the metal plates are connected by metal wires.

8. The 1 / N mode inversion SIW filter based on glass substrate technology according to claim 1, characterized in that: The second metal layer is a solid metal plate.

9. The 1 / N mode inversion SIW filter based on glass substrate technology according to claim 1, characterized in that: The metal plate forming the 1 / N mode inverse SIW filter resonant cavity is fan-shaped or triangular.

10. The 1 / N mode inversion SIW filter based on glass substrate technology according to claim 1, characterized in that: The filter resonant cavity of the 1 / N mode inverse SIW is arranged on one side or both sides of the transition structure.

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