Capacitor
By adopting a coaxial through-hole conductor structure in the capacitor and using the insulating configuration of the first through-hole conductor and the second through-hole conductor, the compatibility of current capacity and capacitor capacity in the semiconductor package is solved, and the current capacity is improved.
Patent Information
- Application Number
- CN202380039577.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-05-13
- Filing Date
- 2023-04-04
- Publication Date
- 2024-12-20
AI Technical Summary
In semiconductor packages, the current capacity and capacitor capacity of the through electrodes are difficult to meet the desired requirements at the same time, resulting in the current capacity and capacitor capacity becoming a trade-off relationship.
By using a coaxial through-hole conductor, the first through-hole conductor and the second through-hole conductor are provided in the thickness direction of the capacitor layer, and the second through-hole conductor is provided in the inner side of the first through-hole conductor, the two are insulated from each other to Reduce the area that does not represent capacitor capacity.
The area where the capacitor capacity is not shown is effectively reduced, the area of the effective capacity of the capacitor layer is increased, thereby increasing the current capacity.
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Figure CN119173972A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to capacitors. Background Art
[0002] In recent years, semiconductor packages have a multilayer structure in which a plurality of substrate layers are stacked. In addition, in order to supply a signal or power to a semiconductor chip, a signal transmission line is usually provided via a through electrode.
[0003] In high-performance semiconductor devices for use in AI (Artificial Intelligence) and data centers, the above-mentioned signal transmission lines are further complicated, or the power supply capacity is increased with the improvement of performance.
[0004] As a result, it is necessary to supply high power (high current) through the through-electrode, and thus the through-electrode is also required to have a high current capacity, that is, a large amount of current is required to flow.
[0005] Furthermore, when electronic components are built into the substrate, it is necessary to consider the area for building the electronic components. Therefore, the area for providing the through-electrodes is further limited, making it more difficult to ensure the current capacity.
[0006] Patent document 1 discloses a module for a semiconductor composite device that supplies a DC voltage regulated by a voltage regulator including a semiconductor active element to a load. The module includes: a capacitor layer including at least one capacitor portion forming a capacitor; a connection terminal for electrically connecting to at least one of the voltage regulator and the load; and a through-hole conductor formed in a manner penetrating the capacitor portion in the thickness direction of the capacitor layer. The capacitor is electrically connected to at least one of the load and the voltage regulator via the through-hole conductor.
[0007] Prior art literature
[0008] Patent Literature
[0009] Patent Document 1: International Publication No. 2021 / 241325 Summary of the invention
[0010] Problem that the invention aims to solve
[0011] An example of a capacitor layer in which a plurality of capacitor sections are arranged in a plane is shown in FIG21 of Patent Document 1. In FIG21 of Patent Document 1, each capacitor section is provided with a first through-hole conductor electrically connected to an anode of the capacitor section and a second through-hole conductor electrically connected to a cathode of the capacitor section.
[0012] As described in Patent Document 1 Figure 17 to Figure 2As shown in FIG. 0 , an insulating region needs to be ensured around the through-hole conductor constituting the through-electrode.
[0013] In the above structure, in order to increase the current capacity of the through-electrode, methods such as (1) increasing the number of through-electrodes and (2) increasing the volume of the through-electrode (for example, increasing the diameter of the through-electrode) may be considered. However, in the case of the above methods, the insulating area required to form the through-electrode also becomes larger.
[0014] The insulating area is an area where the capacitor capacity is not expressed, so if the insulating area becomes larger, the area where the capacitor capacity is expressed becomes smaller. In this way, the current capacity and the capacitor capacity become a trade-off relationship, so it is difficult to simultaneously meet the desired current capacity and capacitor capacity.
[0015] An object of the present invention is to provide a capacitor capable of reducing a region that does not represent capacitor capacitance even when a through-hole conductor constituting a through-electrode is provided.
[0016] Solutions for solving problems
[0017] The capacitor of the present invention comprises: a capacitor layer, which includes a first electrode layer and a second electrode layer that are opposite to each other in the thickness direction via a dielectric layer; and a coaxial through-hole conductor, which is arranged in a manner to penetrate the capacitor layer in the thickness direction of the capacitor layer. The coaxial through-hole conductor includes a first through-hole conductor electrically connected to the first electrode layer and a second through-hole conductor electrically connected to the second electrode layer. The first through-hole conductor is electrically connected to the end surface of the first electrode layer. The second through-hole conductor is arranged inside the first through-hole conductor, and the first through-hole conductor and the second through-hole conductor are insulated from each other.
[0018] Effects of the Invention
[0019] According to the present invention, it is possible to provide a capacitor in which the region that does not represent the capacitor capacitance can be reduced even if a through-hole conductor constituting a through-electrode is provided. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 It is a cross-sectional view schematically showing an example of the capacitor of the present invention.
[0021] Figure 2 yes Figure 1 A top view of the capacitor at the P1 surface is shown.
[0022] Figure 3 It is a cross-sectional view schematically showing an example of a capacitor according to a comparative embodiment of the present invention in which a first through-hole conductor and a second through-hole conductor are provided separately.
[0023] Figure 4 yes Figure 3A top view of the P1 surface of a capacitor of a comparative embodiment is shown.
[0024] Figure 5 It is schematically represented in Figure 4 A plan view showing an example of the area of a region where the capacitor capacity is not represented in the structure of the comparative embodiment shown.
[0025] Figure 6 It is schematically represented in Figure 2 A plan view showing an example of the area of a region where the capacitor capacity is not represented in the structure shown.
[0026] Figure 7 yes Figure 1 A top view of the capacitor at the P2 surface is shown.
[0027] Figure 8 yes Figure 1 A top view of the capacitor at the P3 surface is shown.
[0028] Fig. 9 yes Figure 1 A top view of the capacitor at the P4 surface is shown.
[0029] Fig.10 yes Figure 1 A top view of the capacitor at surface P5 is shown.
[0030] Fig.11 It is a cross-sectional view schematically showing another example of the capacitor of the present invention.
[0031] Fig.12 yes Fig.11 A top view of the capacitor at the P1 surface is shown.
[0032] Fig.13 This is a cross-sectional view schematically showing another example of the capacitor of the present invention.
[0033] Fig.14 It is schematically indicated Fig.13 Figure 2 shows the planar layout of the capacitor.
[0034] Fig.15 Indicated in Fig.14 The planar layout shown shows the relationship between the through-hole conductors and the relationship between each through-hole conductor and the via conductor connected to the second electrode layer.
[0035] Fig.16 Yes Description Fig.13 The diagram of the method for manufacturing a capacitor shown is a cross-sectional view schematically showing a capacitor at a stage before sealing with an outer sealing layer.
[0036] Fig.17 Yes Description Fig.13Another diagram of the method of manufacturing a capacitor shown is a cross-sectional view schematically showing a capacitor at a stage where a through hole is formed in the outer sealing layer. DETAILED DESCRIPTION
[0037] Hereinafter, the capacitor of the present invention will be described.
[0038] However, the present invention is not limited to the following configurations, and can be applied with appropriate changes within the scope of the present invention. In addition, a configuration in which two or more of the preferred configurations of the present invention described below are combined is also the present invention.
[0039] The drawings shown below are schematic diagrams, and their dimensions, aspect ratios, and other aspects may differ from those of actual products.
[0040] Figure 1 It is a cross-sectional view schematically showing an example of the capacitor of the present invention.
[0041] Figure 1 The capacitor 1 shown includes a capacitor layer 10 , a sealing layer 20 that seals the capacitor layer 10 , and a coaxial through-hole conductor 30 that is provided so as to penetrate the capacitor layer 10 in the thickness direction of the capacitor layer 10 .
[0042] The capacitor layer 10 includes a first electrode layer and a second electrode layer that are opposed to each other in the thickness direction via a dielectric layer.
[0043] exist Figure 1 In the example shown, the first electrode layer is the anode plate 11, and the second electrode layer is the cathode layer 12. Thus, the capacitor layer 10 constitutes an electrolytic capacitor.
[0044] Anode plate 11 includes core 11A made of metal, for example, and porous portion 11B provided on at least one main surface of core 11A. Dielectric layer 13 is provided on the surface of porous portion 11B, and cathode layer 12 is provided on the surface of dielectric layer 13.
[0045] The cathode layer 12 includes, for example, a solid electrolyte layer 12A provided on the surface of the dielectric layer 13. Preferably, the cathode layer 12 further includes a conductor layer 12B provided on the surface of the solid electrolyte layer 12A. The conductor layer 12B includes, for example, a carbon layer 12Ba provided on the surface of the solid electrolyte layer 12A and a copper layer 12Bb provided on the surface of the carbon layer 12Ba.
[0046] In addition, the capacitor layer 10 is not limited to electrolytic capacitors such as solid electrolytic capacitors, and may also be a capacitor such as a ceramic capacitor using barium titanate or a thin film capacitor using silicon nitride (SiN), silicon dioxide (SiO2), hydrogen fluoride (HF), etc. However, from the perspective of being able to form a thinner and relatively large area capacitor layer 10 and mechanical properties such as rigidity and flexibility of the capacitor 1, it is preferred that the capacitor layer 10 constitutes a capacitor with a metal such as aluminum as a base material, and it is more preferred that it constitutes an electrolytic capacitor with a metal such as aluminum as a base material.
[0047] Figure 2 yes Figure 1 A top view of the capacitor at the P1 surface is shown.
[0048] like Figure 1 and Figure 2 As shown, the coaxial through-hole conductor 30 includes a first electrode layer (in Figure 1 In the example shown, the first through-hole conductor 31 electrically connected to the anode layer 11 and the second electrode layer (in Figure 1 In the example shown, the cathode layer 12 is electrically connected to the second through-hole conductor 32 .
[0049] In the coaxial through-hole conductor 30, as Figure 1 As shown, the first through-hole conductor 31 is connected to the first electrode layer (at Figure 1 In the example shown, the end surface of the anode plate 11 is electrically connected. As a result, the distance from the first through-hole conductor 31 to the effective capacitance portion of the capacitor layer 10 is shortened, so that the capacitor 1 having excellent frequency characteristics can be designed.
[0050] In the coaxial through-hole conductor 30 , the second through-hole conductor 32 is provided inside the first through-hole conductor 31 , and the first through-hole conductor 31 and the second through-hole conductor 32 are insulated from each other. For example, the space between the first through-hole conductor 31 and the second through-hole conductor 32 is filled with the insulating material 22 .
[0051] As long as the second through-hole conductor 32 is provided inside the first through-hole conductor 31, the axis of the second through-hole conductor 32 may not coincide with the axis of the first through-hole conductor 31, but it is preferred that Figure 1 and Figure 2 As shown, the axis of the first through-hole conductor 31 is consistent with that of the second through-hole conductor 32. The "consistent" mentioned here may not be strictly consistent. For example, when viewed from the thickness direction of the capacitor layer 10, the distance between the axis of the first through-hole conductor 31 and the axis of the second through-hole conductor 32 can be limited to within about 3% of the diameter of the second through-hole conductor 32.
[0052] The inside of the second through-hole conductor 32 may be filled with a material containing resin. In other words, the resin-filled portion 24 may be provided inside the second through-hole conductor 32 .
[0053] Preferably, an insulating layer 26 is provided around the first through-hole conductor 31. Figure 1 and Figure 2 In the illustrated example, the insulating layer 26 is provided between the first through-hole conductor 31 and the cathode layer 12 .
[0054] exist Figure 2 In FIG. 1 , a region inside the outer peripheral edge of the insulating layer 26 provided around the first through-hole conductor 31 corresponds to a region where no capacitor capacitance is expressed.
[0055] Figure 3 It is a cross-sectional view schematically showing an example of a capacitor according to a comparative embodiment of the present invention in which a first through-hole conductor and a second through-hole conductor are provided separately. Figure 4 yes Figure 3 A top view of the P1 surface of a capacitor of a comparative embodiment is shown.
[0056] exist Figure 3 In the capacitor 1 a shown in the figure, the first through-hole conductor 31 and the second through-hole conductor 32 are provided separately.
[0057] The first through-hole conductor 31 is, for example, connected to the first electrode layer (at the Figure 3 In the example shown, the end surface of the anode plate 11 is electrically connected. The space between the second through-hole conductor 32 and the capacitor layer 10 may be filled with the insulating material 22 .
[0058] The resin-filled portion 24 may be provided inside the first through-hole conductor 31 . Similarly, the resin-filled portion 24 may be provided inside the second through-hole conductor 32 .
[0059] Preferably, if Figure 3 and Figure 4 As shown in FIG. 1 , an insulating layer 26 is provided around the first through-hole conductor 31. It is also preferable that an insulating layer 26 is provided around the second through-hole conductor 32. Figure 3 and Figure 4 In the illustrated example, the insulating layer 26 is provided between the first through-hole conductor 31 and the cathode layer 12 or between the second through-hole conductor 32 and the cathode layer 12 .
[0060] exist Figure 4 The sum of the region inside the outer periphery of the insulating layer 26 provided around the first through-hole conductor 31 and the region inside the outer periphery of the insulating layer 26 provided around the second through-hole conductor 32 corresponds to a region not representing capacitor capacitance.
[0061] exist Figure 2 and Figure 4 In the example, the current capacitance ( Figure 2 and Figure 4 When the conductor area in the same manner is the same, providing the second through-hole conductor 32 inside the first through-hole conductor 31 can reduce the area where the capacitor capacitance is not represented, compared with providing the first through-hole conductor 31 and the second through-hole conductor 32 separately.
[0062] Figure 5 It is schematically represented in Figure 4 A plan view showing an example of the area of a region where the capacitor capacity is not represented in the structure of the comparative embodiment shown.
[0063] For example, the diameter d of the first through-hole conductor 31 is 31 The width w of the first through-hole conductor 31 is 125 μm. 31 15 μm (the area of the first through-hole conductor 31 is 5184 μm 2 ), the diameter d of the insulating layer 26 provided around the first through-hole conductor 31 26 is 435 μm, and the diameter d of the second through-hole conductor 32 is 32 The width w of the second through-hole conductor 32 is 125 μm. 32 15 μm (the area of the second through-hole conductor 32 is 5184 μm 2 ), the diameter d of the insulating material 22 provided around the second through-hole conductor 32 22 The diameter d of the insulating layer 26 provided around the insulating material 22 is 255 μm. 26 When the thickness is 565 μm, the area S of the region that does not represent the capacitor capacitance is calculated as S = π (435 / 2) 2 +π(565 / 2) 2 ≒399336[μm 2 ].
[0064] Figure 6 It is schematically represented in Figure 2 A plan view showing an example of the area of a region where the capacitor capacity is not represented in the structure shown.
[0065] For example, when the diameter d of the second through-hole conductor 32 is 32 The width w of the second through-hole conductor 32 is 125 μm. 32 15 μm (the area of the second through-hole conductor 32 is 5184 μm 2 ), the diameter d of the insulating material 22 provided around the second through-hole conductor 32 22 is 255 μm, and the diameter d of the first through-hole conductor 31 is 31 The width w of the first through-hole conductor 31 is 270 μm. 31 is 7.5 μm (the area of the first through-hole conductor 31 is 6185 μm 2), the diameter d of the insulating layer 26 provided around the first through-hole conductor 31 26 When the thickness is 580 μm, the area S of the region that does not represent the capacitor capacitance is calculated as S = π (580 / 2) 2 ≒264208[μm 2 ].
[0066] and Figure 5 In comparison, Figure 6 In this embodiment, the area S of the region not representing the capacitor capacitance required for each set of the first through-hole conductor 31 and the second through-hole conductor 32 can be reduced by about 30%.
[0067] Thus, by providing the second through-hole conductor 32 inside the first through-hole conductor 31, the area density of the coaxial through-hole conductor 30 in the region not representing the capacitor capacitance can be increased. Thus, the area of the effective capacitance portion of the capacitor layer 10 can be expanded. Alternatively, by further arranging the coaxial through-hole conductor 30, the current capacitance can be increased.
[0068] As described above, the width w of the first through-hole conductor 31 may be 31 The width w of the second through-hole conductor 32 is 32 In this case as well, the first through-hole conductor 31 is provided outside the second through-hole conductor 32, and its diameter d 31 The diameter d of the second through-hole conductor 32 is 32 Therefore, the current capacity of the first through-hole conductor 31 and the second through-hole conductor 32 can be made large. Figure 2 The conductor areas in the ) are equal.
[0069] The width of the through-hole conductor refers to the wall thickness of the through-hole conductor, and is a dimension equivalent to {(outer diameter of the through-hole conductor) - (inner diameter of the through-hole conductor)} / 2. Here, the outer diameter of the through-hole conductor corresponds to the diameter d of the first through-hole conductor 31. 31 or the diameter d of the second through-hole conductor 32 32 .
[0070] The coaxial through-hole conductor 30 in which the second through-hole conductor 32 is provided inside the first through-hole conductor 31 is formed, for example, as follows.
[0071] First, a first through hole is formed by drilling, laser processing, etc., at a portion where the first through hole conductor 31 is to be formed. Then, the inner wall surface of the first through hole is metallized with a low-resistance metal such as copper, gold, or silver, thereby forming the first through hole conductor 31. When forming the first through hole conductor 31, the inner wall surface of the first through hole is metallized by, for example, electroless copper plating, electrolytic copper plating, etc., so that processing becomes easy.
[0072] Next, the insulating material 22 is filled inside the first through-hole conductor 31. The second through-hole is formed by drilling, laser processing, etc., on the filled insulating material 22. At this time, the hole diameter of the second through-hole is made smaller than the hole diameter of the first through-hole conductor 31, so that the insulating material 22 is present between the first through-hole conductor 31 and the second through-hole. Thereafter, the inner wall surface of the second through-hole is metalized with a low-resistance metal such as copper, gold, or silver, so as to form the second through-hole conductor 32. When forming the second through-hole conductor 32, for example, the inner wall surface of the second through-hole is metalized by electroless copper plating, electrolytic copper plating, etc., so that processing becomes easy.
[0073] However, the first through-hole conductor 31 and the second through-hole conductor 32 may be conductors that penetrate the capacitor layer, and the method of forming the first through-hole conductor 31 and the second through-hole conductor 32 is not particularly limited to plating. For example, in addition to metallizing the inner wall surface of the second through-hole, the second through-hole may be filled with metal, a composite material of metal and resin, etc., as in the case of a via conductor.
[0074] exist Figure 1 Although not shown, capacitor 1 may further include a through-hole conductor other than coaxial through-hole conductor 30. For example, capacitor 1 may further include a through-hole conductor that is not electrically connected to the first electrode layer and the second electrode layer of capacitor layer 10.
[0075] Preferably, if Figure 1 As shown, the capacitor 1 further includes internal wiring layers 41 and 42 provided inside the sealing layer 20. Preferably, the internal wiring layers 41 and 42 are provided along the main surface direction orthogonal to the thickness direction of the capacitor layer 10. Figure 1 In the illustrated example, the internal wiring layers 41 and 42 are provided on both principal surface sides of the capacitor layer 10 , but may be provided on only one principal surface side.
[0076] Preferably, the capacitor 1 further includes external wiring layers 51 and 52 provided on the surface of the sealing layer 20. Preferably, the external wiring layers 51 and 52 are provided along the main surface direction orthogonal to the thickness direction of the capacitor layer 10. Figure 1 In the example shown, the external wiring layers 51 and 52 are provided on both main surface sides of the capacitor layer 10 , but may be provided on only one main surface side.
[0077] Preferably, the capacitor 1 further includes via conductors 61, 62, 63 provided inside the sealing layer 20. Preferably, the via conductors 61, 62, 63 are provided along the thickness direction of the capacitor layer 10. One end of the via conductor 61 is connected to the internal wiring layer 41, and the other end is connected to the external wiring layer 51. One end of the via conductor 62 is connected to the internal wiring layer 42, and the other end is connected to the external wiring layer 52. One end of the via conductor 63 is connected to the second electrode layer (at the Figure 1 In the example shown, it is the cathode layer 12 ), and the other end is connected to the internal wiring layer 42 .
[0078] Figure 7 yes Figure 1 A top view of the capacitor at P2 is shown. Figure 8 yes Figure 1 A top view of the capacitor at the P3 surface is shown. Fig. 9 yes Figure 1 A top view of the capacitor at the P4 surface is shown. Fig.10 yes Figure 1 A top view of the capacitor at surface P5 is shown.
[0079] exist Figure 1 , Figure 7 , Figure 8 , Fig. 9 as well as Fig.10 In the example shown, the first electrode layer of the capacitor layer 10 (in Figure 1 In the example shown, the anode plate 11 is electrically connected to the external wiring layer 51 via the first through-hole conductor 31, the internal wiring layer 41, and the via conductor 61. In this way, it is preferred that the first electrode layer is electrically drawn to the surface of the sealing layer 20 via the first through-hole conductor 31 and the internal wiring layer 41. The external wiring layer 51 can function as a connection terminal of the capacitor layer 10.
[0080] exist Figure 1 , Figure 7 , Figure 8 , Fig. 9 as well as Fig.10 In the example shown, the second through-hole conductor 32 is connected to the second electrode layer (at the bottom of the capacitor layer 10) via the external wiring layer 52, the via conductor 62, the internal wiring layer 42, and the via conductor 63. Figure 1 In the example shown, the cathode layer 12 is electrically connected. Thus, it is preferred that the second through-hole conductor 32 is provided in a manner penetrating both the capacitor layer 10 and the sealing layer 20 in the thickness direction of the capacitor layer 10. The external wiring layer 52 can function as a connection terminal of the capacitor layer 10.
[0081] exist Fig. 9In the example shown, the second through-hole conductor 32, the via conductor 61, and the via conductor 62 are arranged in a straight line when viewed from the thickness direction of the capacitor layer 10, but they may not be arranged in a straight line. In addition, the number of the via conductor 61 and the via conductor 62 is not particularly limited, and there may be one or more of each.
[0082] When the capacitor layer 10 includes the anode plate 11 and the cathode layer 12, the anode plate 11 is preferably formed of a valve metal showing a so-called valve action. As the valve metal, for example, metal monomers such as aluminum, tantalum, niobium, titanium, and zirconium, or alloys containing at least one of the above metals can be cited. Among them, aluminum or an aluminum alloy is preferred.
[0083] The shape of the anode plate 11 is preferably a flat plate, more preferably a foil. The anode plate 11 only needs to have the porous portion 11B on at least one main surface of the core 11A, or may have the porous portion 11B on both main surfaces of the core 11A. The porous portion 11B is preferably a porous layer formed on the surface of the core 11A, more preferably an etching layer.
[0084] The thickness of the anode plate 11 before etching is preferably 60 μm or more and 200 μm or less. The thickness of the core 11A that is not etched after etching is preferably 15 μm or more and 70 μm or less. The thickness of the porous portion 11B is designed to match the required withstand voltage and electrostatic capacitance, but preferably, the total thickness of the porous portions 11B on both sides of the core 11A is 10 μm or more and 180 μm or less.
[0085] The pore size of the porous portion 11B is preferably 10 nm or more and 600 nm or less. The pore size of the porous portion 11B refers to a median diameter D50 measured by a mercury porosimeter. The pore size of the porous portion 11B can be controlled by adjusting various conditions during etching, for example.
[0086] The dielectric layer 13 provided on the surface of the porous portion 11B is porous reflecting the surface state of the porous portion 11B and has a fine concavoconvex surface shape. Preferably, the dielectric layer 13 is formed of an oxide film of the valve action metal. For example, when an aluminum foil is used as the anode plate 11, the surface of the aluminum foil is subjected to an anodic oxidation treatment (also called chemical conversion treatment) in an aqueous solution containing ammonium adipate or the like, so that the dielectric layer 13 formed of an oxide film can be formed.
[0087] The thickness of the dielectric layer 13 is designed to match the required withstand voltage and electrostatic capacitance, but is preferably not less than 10 nm and not more than 100 nm.
[0088] In the case where the cathode layer 12 includes a solid electrolyte layer 12A, as a material constituting the solid electrolyte layer 12A, for example, conductive polymers such as polypyrroles, polythiophenes, and polyanilines can be cited. Among them, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene) called PEDOT is particularly preferred. In addition, the above-mentioned conductive polymer may also include a dopant such as polystyrene sulfonic acid (PSS). In addition, it is preferred that the solid electrolyte layer 12A includes an inner layer that fills the pores (recesses) of the dielectric layer 13 and an outer layer that covers the dielectric layer 13.
[0089] The thickness of solid electrolyte layer 12A from the surface of porous portion 11B is preferably 2 μm or more and 20 μm or less.
[0090] The solid electrolyte layer 12A is formed, for example, by a method of forming a polymer film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment solution containing a monomer such as 3,4-ethylenedioxythiophene, or by a method of applying a dispersion of a polymer such as poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 and drying it.
[0091] The solid electrolyte layer 12A can be formed in a predetermined region by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by sponge transfer, screen printing, dispenser, inkjet printing, or the like.
[0092] When cathode layer 12 includes conductor layer 12B, conductor layer 12B includes at least one of a conductive resin layer and a metal layer. Conductor layer 12B may be only a conductive resin layer or only a metal layer. Preferably, conductor layer 12B covers the entire surface of solid electrolyte layer 12A.
[0093] Examples of the conductive resin layer include a conductive adhesive layer containing at least one conductive filler selected from the group consisting of a silver filler, a copper filler, a nickel filler, and a carbon filler.
[0094] As the metal layer, for example, metal plating, metal foil, etc. can be cited. Preferably, the metal layer is formed of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as main components. In addition, the "main component" refers to the element component with the largest weight ratio.
[0095] In the case where the conductor layer 12B includes the carbon layer 12Ba and the copper layer 12Bb, the carbon layer 12Ba is provided to electrically and mechanically connect the solid electrolyte layer 12A and the copper layer 12Bb. The carbon layer 12Ba can be formed in a predetermined area by applying a carbon paste on the solid electrolyte layer 12A using sponge transfer, screen printing, a dispenser, inkjet printing, etc. In addition, it is preferred that the carbon layer 12Ba is laminated with the copper layer 12Bb of the next process in a sticky state before drying. The thickness of the carbon layer 12Ba is preferably greater than 2 μm and less than 20 μm.
[0096] When the conductor layer 12B includes the carbon layer 12Ba and the copper layer 12Bb, the copper layer 12Bb can be formed by printing a copper paste on the carbon layer 12Ba by sponge transfer, screen printing, spray coating, dispenser, inkjet printing, etc. The thickness of the copper layer 12Bb is preferably 2 μm to 20 μm.
[0097] The sealing layer 20 is made of an insulating material. Preferably, the sealing layer 20 is made of an insulating resin. Examples of the insulating resin constituting the sealing layer 20 include epoxy resins and phenolic resins. Furthermore, preferably, the sealing layer 20 includes a filler. Examples of the filler included in the sealing layer 20 include inorganic fillers such as silica particles, alumina particles, and metal particles.
[0098] exist Figure 1 In the example shown, the sealing layer 20 is provided on both main surface sides of the capacitor layer 10, but it can also be provided on only one main surface side. The sealing layer 20 provided on one main surface side of the capacitor layer 10 can be composed of only one layer or two or more layers. In the case where the sealing layer 20 is composed of two or more layers, the materials constituting each layer can be the same or different.
[0099] A layer such as a stress relaxation layer or a moisture-proof film may be provided between the capacitor layer 10 and the sealing layer 20 .
[0100] Preferably, the stress relaxation layer is composed of an insulating resin. As the insulating resin constituting the stress relaxation layer, for example, epoxy resin, phenolic resin, silicone resin, etc. can be cited. Moreover, preferably, the stress relaxation layer contains a filler. As the filler contained in the stress relaxation layer, for example, inorganic fillers such as silica particles, alumina particles, and metal particles can be cited. Preferably, the insulating resin constituting the stress relaxation layer is different from the insulating resin constituting the sealing layer 20.
[0101] The sealing layer 20 is required to have properties such as close adhesion to the external electrodes (for example, the external wiring layers 51 and 52) as an outer casing, so it is difficult to generally match its linear expansion coefficient with that of the capacitor layer 10 or select a resin with an arbitrary elastic modulus. In this regard, by providing a stress relaxation layer, the thermal stress design can be adjusted without losing the functions of the capacitor layer 10 and the sealing layer 20.
[0102] Preferably, the moisture permeability of the stress relaxation layer is lower than the moisture permeability of the sealing layer 20. In this case, in addition to the adjustment of the stress, it is also possible to reduce the intrusion of moisture into the capacitor layer 10. The moisture permeability of the stress relaxation layer can be adjusted according to the type of insulating resin constituting the stress relaxation layer, the amount of filler contained in the stress relaxation layer, and the like.
[0103] Preferably, the insulating material 22 filled between the first through-hole conductor 31 and the second through-hole conductor 32 is composed of an insulating resin. Examples of the insulating resin constituting the insulating material 22 include epoxy resins and phenolic resins. Furthermore, preferably, the insulating material 22 includes a filler. Examples of the filler included in the insulating material 22 include inorganic fillers such as silica particles, alumina particles, and metal particles.
[0104] The insulating material 22 may also be made of the same material as the sealing layer 20. Figure 1 As shown, the sealing layer 20 is filled between the first through-hole conductor 31 and the second through-hole conductor 32 .
[0105] Alternatively, the insulating material 22 may be made of the same material as the above-mentioned stress relaxation layer. For example, when the capacitor 1 includes a stress relaxation layer, the stress relaxation layer may be filled between the first through-hole conductor 31 and the second through-hole conductor 32 .
[0106] The thermal expansion coefficient of the insulating material 22 may be larger or smaller than the thermal expansion coefficient of the material (for example, copper) constituting the first through-hole conductor 31 and the second through-hole conductor 32 , or may be the same as the thermal expansion coefficient of the insulating material 22 .
[0107] When resin filling portion 24 is provided inside second through-hole conductor 32 , the thermal expansion coefficient of the material constituting resin filling portion 24 may be larger, smaller, or the same as the thermal expansion coefficient of the material constituting second through-hole conductor 32 (eg, copper).
[0108] When the insulating layer 26 is provided around the first through-hole conductor 31 constituting the coaxial through-hole conductor 30, the insulating layer 26 is preferably made of an insulating resin. Examples of the insulating resin constituting the insulating layer 26 include polyphenylsulfone resin, polyethersulfone resin, cyanate resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), polyimide resin, polyamide-imide resin, epoxy resin, and derivatives or precursors thereof.
[0109] The insulating layer 26 may be made of the same resin as the sealing layer 20. Unlike the sealing layer 20, if the insulating layer 26 contains an inorganic filler, it may adversely affect the effective capacitance portion of the capacitor layer 10. Therefore, the insulating layer 26 is preferably formed of a single resin.
[0110] The insulating layer 26 can be formed, for example, by applying a masking material such as a composition containing an insulating resin to the surface of the porous portion 11B by a method such as sponge transfer, screen printing, dispenser, or inkjet printing.
[0111] The thickness of the insulating layer 26 from the surface of the porous portion 11B is preferably 20 μm or less. The thickness of the insulating layer 26 from the surface of the porous portion 11B may be 0 μm, but is preferably 2 μm or more.
[0112] exist Figure 1 In the example shown, the insulating material is filled in the porous portion 11B of the end face of the anode plate 11 exposed to be electrically connected to the first through-hole conductor 31, so that the insulating layer 26 is provided around the first through-hole conductor 31. By filling the insulating material in the porous portion 11B in a certain range around the first through-hole conductor 31, the insulation between the anode plate 11 and the cathode layer 12 can be ensured, so that a short circuit can be prevented. In addition, by suppressing the dissolution of the end face of the anode plate 11 generated during the treatment of the chemical solution for forming the internal wiring layers 41, 42, etc., it is possible to prevent the chemical solution from infiltrating into the capacitor layer 10, so that the reliability of the capacitor 1 is improved.
[0113] The insulating layer 26 may be filled inside the porous portion 11B and provided on the surface of the porous portion 11B above the filled portion. That is, the thickness of the insulating layer 26 may be greater than the thickness of the porous portion 11B.
[0114] Alternatively, an anode connection layer may be provided between the first through-hole conductor 31 and the end surface of the anode plate 11. That is, the first through-hole conductor 31 may be electrically connected to the end surface of the anode plate 11 via the anode connection layer. When the anode connection layer is provided between the first through-hole conductor 31 and the end surface of the anode plate 11, the anode connection layer functions as a barrier layer for the anode plate 11. As a result, by suppressing the dissolution of the anode plate 11 generated during the treatment of the chemical solution for forming the internal wiring layers 41, 42, etc., it is possible to prevent the chemical solution from infiltrating into the capacitor layer 10, thereby improving the reliability of the capacitor 1.
[0115] When an anode connection layer is provided between the first through-hole conductor 31 and the end surface of the anode plate 11, the anode connection layer includes, for example, a first anode connection layer having zinc as a main material and a second anode connection layer having nickel or copper as a main material in order from the anode plate 11. For example, after zinc is substituted and precipitated by zincate treatment to form the first anode connection layer on the end surface of the anode plate 11, the second anode connection layer is formed on the first anode connection layer by electroless nickel plating treatment or electroless copper plating treatment. In addition, there is also a case where the first anode connection layer disappears, in which case the anode connection layer may include only the second anode connection layer.
[0116] In addition, the anode connection layer may not be provided between the first through-hole conductor 31 and the end surface of the anode plate 11. In this case, the first through-hole conductor 31 and the end surface of the anode plate 11 are directly connected.
[0117] Preferably, if Figure 2 As shown, the first through-hole conductor 31 is electrically connected to the end surface of the first electrode layer (for example, the anode plate 11) throughout the entire circumference. In this case, the contact area between the first through-hole conductor 31 and the first electrode layer increases, thereby reducing the connection resistance with the first through-hole conductor 31, thereby reducing the equivalent series resistance (ESR) of the capacitor 1. In addition, the adhesion between the first through-hole conductor 31 and the first electrode layer increases, so that the defective conditions such as peeling at the connection surface caused by thermal stress are not easy to occur.
[0118] As the constituent material of the internal wiring layers 41 and 42, for example, low-resistance metals such as silver, gold, and copper can be cited. The constituent material of the internal wiring layer 41 may be the same as or different from the constituent material of the internal wiring layer 42. The internal wiring layers 41 and 42 are formed by a method such as plating.
[0119] In order to improve the adhesion between the internal wiring layers 41, 42 and other components, for example, in order to improve the adhesion between the internal wiring layers 41 and the first through-hole conductor 31, the constituent material of the internal wiring layers 41, 42 can also be a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin.
[0120] As the constituent material of the external wiring layers 51 and 52, for example, low-resistance metals such as silver, gold, and copper can be cited. The constituent material of the external wiring layer 51 may be the same as or different from the constituent material of the external wiring layer 52. In addition, the constituent material of the external wiring layers 51 and 52 may be the same as or different from the constituent material of the internal wiring layers 41 and 42. The external wiring layers 51 and 52 are formed by, for example, plating treatment or the like.
[0121] In order to improve the adhesion between the external wiring layers 51, 52 and other components, for example, in order to improve the adhesion between the external wiring layers 52 and the second through-hole conductor 32, the constituent material of the external wiring layers 51, 52 can also be a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin.
[0122] Examples of materials for via conductors 61, 62, and 63 include the same materials as those for internal wiring layers 41 and 42. Via conductors 61, 62, and 63 are formed by, for example, plating or heat treatment of a conductive paste.
[0123] Fig.11 It is a cross-sectional view schematically showing another example of the capacitor of the present invention. Fig.12 yes Fig.11 A top view of the capacitor at the P1 surface is shown.
[0124] You can also Fig.11 and Fig.12 As in the capacitor 2 shown in FIG. 1 , the capacitor layer 10 has two or more effective capacitance portions AR1 and insulating partition portions AR2 that partition the effective capacitance portions AR1 when viewed in the thickness direction of the capacitor layer 10 .
[0125] The effective capacitance area AR1 is the first electrode layer in the thickness direction of the capacitor layer 10 (in Fig.11 and Fig.12 In the example shown, the anode plate 11) and the second electrode layer (in Fig.11 and Fig.12 In the example shown, the cathode layer 12 is located in a region opposite to the dielectric layer 13.
[0126] The capacitor layer 10 is disconnected between adjacent effective capacity parts AR1. The capacitor layer 10 only needs to be physically disconnected between adjacent effective capacity parts AR1. In this case, the capacitor layer 10 can be electrically disconnected or electrically connected between adjacent effective capacity parts AR1. In the case where the capacitor layer 10 has three or more effective capacity parts AR1, the effective capacity parts AR1 of adjacent capacitor layers 10 electrically disconnected from each other and the effective capacity parts AR1 of adjacent capacitor layers 10 electrically connected to each other can also exist in a mixed state.
[0127] Preferably, if Fig.11 and Fig.12 As shown, there is at least one coaxial through-hole conductor 30 inside the effective capacity portion AR1. By arranging the through-hole conductor inside the effective capacity portion AR1, it is possible to ensure greater capacity and design freedom for the power supply line than when arranging the through-hole conductor around the effective capacity portion AR1.
[0128] Preferably, at least one coaxial through-hole conductor 30 exists inside at least one of the two or more effective capacity portions AR1, and more preferably, at least one coaxial through-hole conductor 30 exists inside each effective capacity portion AR1. The number of coaxial through-hole conductors 30 existing inside the effective capacity portion AR1 may be the same, or may be partially or completely different.
[0129] The insulating partition portion AR2 is provided so as to surround the effective capacitance portion AR1 when viewed in the thickness direction of the capacitor layer 10 .
[0130] exist Fig.11 and Fig.12 In the example shown, the insulating layer 28 is provided so as to surround the cathode layer 12 when viewed in the thickness direction of the capacitor layer 10. The portion where the capacitor layer 10 is disconnected is filled with the sealing layer 20. In this case, the insulating layer 28 and the sealing layer 20 form the insulating partition AR2.
[0131] When the insulating layer 28 is provided so as to surround the cathode layer 12, it is preferable that the insulating layer 28 is made of an insulating resin. Examples of the insulating resin constituting the insulating layer 28 include polyphenylsulfone resin, polyethersulfone resin, cyanate resin, fluororesin (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, etc.), polyimide resin, polyamide-imide resin, epoxy resin, and derivatives or precursors thereof. The insulating layer 28 may be made of the same insulating resin as the insulating layer 26, or may be made of a different insulating resin.
[0132] The insulating layer 28 may be made of the same resin as the sealing layer 20. Unlike the sealing layer 20, if the insulating layer 28 contains an inorganic filler, it may adversely affect the effective capacitance area AR1 of the capacitor layer 10. Therefore, the insulating layer 28 is preferably formed of a single resin.
[0133] There is no particular limitation on the number of effective capacity parts AR1 as long as there are more than two. When viewed from the thickness direction of the capacitor layer 10, the effective capacity part AR1 can be arranged in a straight line or in a plane. In addition, the effective capacity part AR1 can be arranged regularly or irregularly. The size and planar shape of the effective capacity part AR1 when viewed from the thickness direction of the capacitor layer 10 can be the same, partially different or completely different. Alternatively, the capacitor layer 10 has two or more effective capacity parts AR1 with different areas when viewed from the thickness direction.
[0134] Alternatively, the capacitor layer 10 may include a capacitance effective portion AR1 whose plane shape when viewed from the thickness direction is not a rectangle. In this specification, "rectangle" refers to a square or a rectangle. Therefore, the capacitor layer 10 may include, for example, a capacitance effective portion AR1 whose plane shape is a quadrilateral, triangle, pentagon, hexagon or other polygon other than a rectangle, a shape including a curved portion, a circle, an ellipse, etc. In this case, the capacitor layer 10 may include two or more capacitance effective portions AR1 with different plane shapes. In addition, in addition to the capacitance effective portion AR1 whose plane shape is not a rectangle, the capacitor layer 10 may also include a capacitance effective portion AR1 whose plane shape is a rectangle, or may not include a capacitance effective portion AR1 whose plane shape is a rectangle.
[0135] Among the two or more effective capacity parts AR1, the entire effective capacity part AR1 may be surrounded by the insulating partition part AR2, or there may be an effective capacity part AR1 that is not surrounded by the insulating partition part AR2. Among the effective capacity parts AR1 surrounded by the insulating partition part AR2, the entire effective capacity part AR1 may be surrounded by the insulating partition part AR2, or only a part of the effective capacity part AR1 may be surrounded by the insulating partition part AR2.
[0136] Fig.13 This is a cross-sectional view schematically showing another example of the capacitor of the present invention. Fig.14 It is schematically indicated Fig.13 Figure 2 shows the planar layout of the capacitor. Fig.13 Equivalent to Fig.14 The AA line section view is shown. Fig.14, the thick dotted line represents the first through-hole conductor 31, the thick solid line represents the second through-hole conductor 32, the thick double-dash line represents the third through-hole conductor 33, the thick single-dash line represents the fourth through-hole conductor 34, the thick dotted line represents the via conductors 62, 63, the thin single-dash line represents the internal wiring layers 41, 42, the thin double-dash line represents the external wiring layers 71, 72, the thin dotted line represents the cathode layer (second electrode layer) 12, the thin solid line represents the through hole provided in the anode plate (first electrode layer) 11, and the thin dotted line represents the outer shape of a capacitance effective part (unit) having a coaxial through-hole conductor 30.
[0137] It can also be, Fig.13 and Fig.14 The capacitor 3 shown has Figure 1 The capacitor 1 shown is further sealed by the outer sealing layer 21, and has a third through-hole conductor 33 and a fourth through-hole conductor 34 respectively penetrating the outer sealing layer 21. The third through-hole conductor 33 is electrically connected to the first electrode layer (anode plate 11) of the capacitor layer 10, and the fourth through-hole conductor 34 is electrically connected to the second electrode layer (cathode layer 12).
[0138] At the locations where the third through-hole conductor 33 and the fourth through-hole conductor 34 are formed, through-holes having a diameter larger than that of these members are formed in the anode plate 11 and are filled with the insulating material 23 .
[0139] The above electrical connection can be achieved by connecting the third through-hole conductor 33 to the side surface of the internal wiring layer 41 and / or the external wiring layer 51 and connecting the fourth through-hole conductor 34 to the side surface of the internal wiring layer 42 and / or the external wiring layer 52 .
[0140] The outer sealing layer 21 is made of an insulating material. The insulating material constituting the outer sealing layer 21 may be the same as or different from the insulating material constituting the sealing layer 20. Preferably, the outer sealing layer 21 is made of an insulating resin. More preferably, the outer sealing layer 21 contains a filler.
[0141] exist Fig.13 In the example shown, the outer sealing layer 21 is provided on both main surface sides of the sealing layer 20, but it may be provided on only one main surface side. The outer sealing layer 21 provided on one main surface side of the sealing layer 20 may be composed of only one layer or may be composed of two or more layers. When the outer sealing layer 21 is composed of two or more layers, the materials constituting each layer may be the same or different.
[0142] The insides of the third through-hole conductor 33 and the fourth through-hole conductor 34 may be filled with a material containing resin. That is, the resin-filled portion 25 may be provided inside the third through-hole conductor 33 and the fourth through-hole conductor 34 .
[0143] The capacitor 3 may further include external wiring layers 71 and 72 provided on the surface of the outer sealing layer 21 . The external wiring layer 71 is connected to the third through-hole conductor 33 , and the external wiring layer 72 is connected to the fourth through-hole conductor 34 .
[0144] Preferably, if Fig.14 As shown in FIG. 1 , the coaxial through-hole conductors 30, the third through-hole conductors 33, and the fourth through-hole conductors 34 are regularly arranged in a honeycomb shape. In this case, it is preferable that the via conductors 62 and 63 are arranged at the center of the equilateral triangle formed by the three points of the centers of the coaxial through-hole conductors 30, the third through-hole conductors 33, and the fourth through-hole conductors 34 arranged in the honeycomb shape. It is further preferable that the equilateral triangle-shaped internal wiring layer 42 is formed to include three via conductors 62 formed at the same distance from the center of the fourth through-hole conductor 34.
[0145] Fig.15 Indicated in Fig.14 The planar layout shown shows the relationship between the through-hole conductors and the relationship between each through-hole conductor and the via conductor connected to the second electrode layer.
[0146] Preferably, if Fig.15 As shown, in the capacitor 3, the distance between the centers of the coaxial through-hole conductor 30 and the third through-hole conductor 33, the distance between the centers of the third through-hole conductor 33 and the fourth through-hole conductor 34, and the distance between the centers of the fourth through-hole conductor 34 and the coaxial through-hole conductor 30 are the same (in Fig.15 In the figure, the thick solid arrows are of the same length. In addition, it is preferable that the distance between the center of the coaxial through-hole conductor 30 and each via conductor 62, 63, the distance between the center of the third through-hole conductor 33 and each via conductor 62, 63, and the distance between the center of the fourth through-hole conductor 34 and each via conductor 62, 63 are the same (in Fig.15 , the thin solid arrows are the same length as each other).
[0147] Fig.16 Yes Description Fig.13 The diagram of the method for manufacturing a capacitor shown is a cross-sectional view schematically showing a capacitor at a stage before being sealed with an outer sealing layer. Fig.17 Yes Description Fig.13 Another diagram of the method of manufacturing a capacitor shown is a cross-sectional view schematically showing a capacitor at a stage where a through hole is formed in the outer sealing layer.
[0148] The capacitor 3 is formed, for example, as follows.
[0149] First, if Fig.16 As shown, Figure 1The capacitor 1 shown in the figure is similar to the capacitor 3a in the stage before the outer sealing layer 21 is formed. In the capacitor 3a, the first through hole for the first through hole conductor 31 is formed, and the third through hole for the third through hole conductor and the fourth through hole for the fourth through hole conductor are formed. Then, the third through hole and the fourth through hole are filled with the insulating material 23, and then, Figure 1 Similarly, in the capacitor 1 shown, the first through-hole conductor 31 , the internal wiring layers 41 , 42 , the second through-hole conductor 32 , and the external wiring layers 51 , 52 are formed in this order.
[0150] Then, if Fig.17 As shown, the capacitor 3a is sealed by the outer sealing layer 21. Alternatively, the capacitor 3a may be embedded in the substrate of the semiconductor package. Then, through holes are formed by drilling, laser processing, etc., at the portions where the third through-hole conductor 33 and the fourth through-hole conductor 34 are to be formed.
[0151] Then, the inner wall surface of the through hole is metallized with a low-resistance metal such as copper, gold or silver, so that Fig.13 As shown, the third through-hole conductor 33 and the fourth through-hole conductor 34 are formed. When forming the third through-hole conductor 33 and the fourth through-hole conductor 34, for example, the inner wall surface of the through-hole is metallized by electroless copper plating or electrolytic copper plating, so that processing becomes easy.
[0152] The capacitor of the present invention can be appropriately used as a constituent material of a composite electronic component. Such a composite electronic component includes, for example, the capacitor of the present invention, an external electrode (for example, an external wiring layer) provided outside the sealing layer of the capacitor and electrically connected to the first electrode layer and the second electrode layer of the capacitor, and an electronic component connected to the external electrode.
[0153] In the composite electronic component, the electronic component connected to the external electrode may be either a passive element or an active element. Both the passive element and the active element may be connected to the external electrode, or either the passive element or the active element may be connected to the external electrode. In addition, a composite of a passive element and an active element may be connected to the external electrode.
[0154] Examples of passive components include inductors, etc. Examples of active components include memories, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), and PMICs (Power Management ICs).
[0155] The capacitor of the present invention has a sheet-like shape as a whole. Therefore, in the composite electronic component, the capacitor can be treated like a mounting substrate, and the electronic component can be mounted on the capacitor. Moreover, by setting the shape of the electronic component mounted on the capacitor to be sheet-like, the capacitor and the electronic component can be connected in the thickness direction via the through-hole conductor that penetrates each electronic component in the thickness direction. As a result, active components and passive components can be configured as batch modules.
[0156] For example, the capacitor of the present invention can be electrically connected between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied, thereby forming a switching regulator.
[0157] In the composite electronic component, a circuit layer may be formed on any surface of a capacitor array sheet in which a plurality of capacitors of the present invention are further arranged, and then connected to a passive element or an active element.
[0158] Alternatively, the capacitor of the present invention may be placed in a cavity previously provided in a substrate, embedded in a resin, and then a circuit layer may be formed on the resin. Alternatively, other electronic components (passive or active) may be mounted in other cavities of the substrate.
[0159] Alternatively, the capacitor of the present invention may be mounted on a smooth carrier such as a wafer or glass, and after the outer layer is formed from resin, a circuit layer may be formed, and then connected to a passive element or an active element.
[0160] The following contents are disclosed in this specification.
[0161] <1>
[0162] A capacitor, wherein
[0163] The capacitor includes:
[0164] a capacitor layer including a first electrode layer and a second electrode layer facing each other in a thickness direction with a dielectric layer interposed therebetween; and
[0165] a coaxial through-hole conductor provided so as to penetrate the capacitor layer in a thickness direction of the capacitor layer;
[0166] The coaxial through-hole conductor includes a first through-hole conductor electrically connected to the first electrode layer and a second through-hole conductor electrically connected to the second electrode layer.
[0167] The first through-hole conductor is electrically connected to an end surface of the first electrode layer.
[0168] The second through-hole conductor is provided inside the first through-hole conductor.
[0169] The first through-hole conductor and the second through-hole conductor are insulated from each other.
[0170] <2>
[0171] According to the capacitor described in <1>,
[0172] The capacitor includes a sealing layer that seals the capacitor layer.
[0173] <3>
[0174] According to the capacitor described in <2>,
[0175] The capacitor further includes an internal wiring layer disposed inside the sealing layer.
[0176] The first electrode layer is electrically drawn out to the surface of the sealing layer via the first through-hole conductor and the internal wiring layer.
[0177] <4>
[0178] According to the capacitor described in <2> or <3>,
[0179] The second through-hole conductor is provided so as to penetrate both the capacitor layer and the sealing layer in a thickness direction of the capacitor layer.
[0180] <5>
[0181] A capacitor according to any one of <1> to <4>,
[0182] The capacitor further includes an insulating layer provided around the first through-hole conductor.
[0183] <6>
[0184] A capacitor according to any one of <1> to <5>,
[0185] The first electrode layer is an anode plate having a core portion and a porous portion, wherein the core portion is formed of metal and the porous portion is provided on at least one main surface of the core portion.
[0186] The dielectric layer is provided on the surface of the porous portion.
[0187] The second electrode layer is a cathode layer provided on the surface of the dielectric layer.
[0188] <7>
[0189] According to the capacitor described in <6>,
[0190] The cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer.
[0191] <8>
[0192] The capacitor according to any one of <1> to <7>, wherein
[0193] When viewed in a thickness direction of the capacitor layer, the capacitor layer has two or more effective capacitance portions and an insulating partition portion that partitions the effective capacitance portions.
[0194] <9>
[0195] According to the capacitor described in <8>,
[0196] At least one of the coaxial through-hole conductors is present inside the capacitance effective portion.
[0197] <10>
[0198] A capacitor according to any one of <1> to <9>,
[0199] The width of the first through-hole conductor is smaller than the width of the second through-hole conductor.
[0200] Description of Reference Numerals
[0201] 1, 1a, 2, 3, 3a, capacitor; 10, capacitor layer; 11, anode plate (first electrode layer); 11A, core; 11B, porous portion; 12, cathode layer (second electrode layer); 12A, solid electrolyte layer; 12B, conductor layer; 12Ba, carbon layer; 12Bb, copper layer; 13, dielectric layer; 20, sealing layer; 21, outer sealing layer; 22, 23, insulating material; 24, 25, resin filling portion; 26, 28, insulating layer; 30, coaxial through-hole conductor; 31, first through-hole conductor; 32, second through-hole conductor; 33, third through-hole conductor; 34, fourth through-hole conductor; 41, 42, internal wiring layer; 51, 52, 71, 72, external wiring layer; 61, 62, 63, via conductor; AR1, effective capacity portion; AR2, insulating partition portion; d 22 , the diameter of the insulating material; d 26 , the diameter of the insulation layer; d 31 , a diameter of the first through-hole conductor;
[0202] d 32 , the diameter of the second through-hole conductor; w 31 , the width of the first through-hole conductor; w 32 , the width of the second through-hole conductor.
Claims
1. A capacitor, wherein: The capacitor includes: a capacitor layer including a first electrode layer and a second electrode layer facing each other in a thickness direction with a dielectric layer interposed therebetween; and a coaxial through-hole conductor provided so as to penetrate the capacitor layer in a thickness direction of the capacitor layer, The coaxial through-hole conductor includes a first through-hole conductor electrically connected to the first electrode layer and a second through-hole conductor electrically connected to the second electrode layer. The first through-hole conductor is electrically connected to an end surface of the first electrode layer. The second through-hole conductor is provided inside the first through-hole conductor. The first through-hole conductor and the second through-hole conductor are insulated from each other.
2. The capacitor according to claim 1, wherein: The capacitor further includes a sealing layer sealing the capacitor layer.
3. The capacitor according to claim 2, wherein: The capacitor further includes an internal wiring layer provided inside the sealing layer. The first electrode layer is electrically extracted to the surface of the sealing layer via the first through-hole conductor and the internal wiring layer.
4. The capacitor according to claim 2 or 3, wherein: The second through-hole conductor is provided so as to penetrate both the capacitor layer and the sealing layer in the thickness direction of the capacitor layer.
5. The capacitor according to any one of claims 1 to 4, wherein: The capacitor further includes an insulating layer provided around the first through-hole conductor.
6. The capacitor according to any one of claims 1 to 5, wherein: The first electrode layer is an anode plate having a core portion and a porous portion, the core portion is formed of metal, and the porous portion is provided on at least one main surface of the core portion. The dielectric layer is provided on the surface of the porous portion. The second electrode layer is a cathode layer provided on the surface of the dielectric layer.
7. The capacitor according to claim 6, wherein: The cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer.
8. The capacitor according to any one of claims 1 to 7, wherein: When viewed in a thickness direction of the capacitor layer, the capacitor layer has two or more effective capacitance portions and an insulating partition portion that partitions the effective capacitance portions.
9. The capacitor according to claim 8, wherein: At least one of the coaxial through-hole conductors exists inside the capacitance effective portion.
10. The capacitor according to any one of claims 1 to 9, wherein: The width of the first through-hole conductor is smaller than the width of the second through-hole conductor.
Citation Information
Patent Citations
module
WO2021241325A1
