Reaction by-product capturing device for semiconductor engineering

Abstract

The present invention relates to a reaction by-product trapping device for semiconductor engineering, which is induced by thermal decomposition in a high-temperature region and an oxidation reaction in a low-temperature region, and comprises: a box-type trapping part (4), a trapping box (41) that accumulates the trapped powder-state oxide while accommodating the inflowing exhaust gas in an internal space in which a low-temperature region is formed and discharging the exhaust gas to the lower part; a trap plate part (42) which is installed inside the trap box (41) and on which a plurality of trap plates (421) for growing a solid-state high dielectric constant (High K) substance into a powder-state oxide by an oxidation reaction in a low-temperature region are installed in a plurality of stages so as to be spaced from each other up and down; and a cooling plate section (5) through which cooling water supplied from the outside can be circulated and discharged in order to increase the area of the low-temperature region in the box-type capturing section (4) to the maximum extent.

Description

Technical Field

[0001] The present invention relates to a reaction byproduct capture device for semiconductor engineering, which is induced by thermal decomposition in a high temperature region and oxidation reaction in a low temperature region, and more particularly to a reaction byproduct capture device for capturing high dielectric constant (High K) substances contained in an oxidation process for depositing semiconductor insulating films using high dielectric constant (High K) substances in order to achieve miniaturization of semiconductor circuits, when a high dielectric constant (High K) deposition precursor supplied to a process chamber is contained in exhaust gas after the deposition process and is discharged. Background Art

[0002] Generally speaking, semiconductor manufacturing engineering generally includes pre-engineering (fabrication engineering) and post-engineering (assembly engineering). Pre-engineering refers to the process of processing a specific pattern and manufacturing a semiconductor chip by repeatedly performing the process of depositing a thin film on a wafer in various process chambers and then selectively etching the deposited thin film, while post-engineering refers to the process of assembling the finished product by separating the chips manufactured in the pre-engineering and combining them with the lead frame.

[0003] At this time, the process of depositing a thin film on the wafer or etching the thin film deposited on the wafer is performed under high temperature conditions after various semiconductor deposition and timely available precursors and reaction gases are injected into the process chamber through a gas injection system. During the execution of the process, a large amount of harmful gases containing various flammable gases, corrosive foreign matter and toxic components will be generated inside the process chamber.

[0004] In order to discharge the harmful gases as described above after purification, a scrubber is provided at the rear end of the vacuum pump used to convert the process chamber for semiconductor manufacturing into a vacuum state, for purifying the exhaust gas discharged from the process chamber and then discharging it into the atmosphere.

[0005] However, because the scrubber is mainly used to purify gaseous reaction by-products, if the reaction by-products solidify after being discharged to the outside of the process chamber, it may cause problems such as increased exhaust pressure due to fixation in the exhaust pipe, or may cause pump failure when flowing into the vacuum pump, and contamination of the wafer due to harmful gases flowing back into the process chamber.

[0006] Therefore, most semiconductor manufacturing devices will install a reaction byproduct capture device between the process chamber and the vacuum pump to condense the exhaust gas and capture it in a powder or solid state.

[0007] In addition, in order to solve the current leakage problem on the semiconductor insulating film caused by the increase in semiconductor integration and the miniaturization of semiconductor circuits, the precursors for the gate oxide film or capacitor oxide film deposition project supplied to the process chamber are showing a trend of gradually changing from the current SiO2 deposition precursor to a high dielectric constant (High K) material deposition precursor with a higher dielectric constant (for example: Al2O3, HfO2, ZrO2).

[0008] Therefore, only by capturing and then discharging the solid substance, ie, the high dielectric constant (High K) substance, contained in the exhaust gas discharged in the state of containing the precursor as described above, can the vacuum pump be prevented from malfunctioning.

[0009] However, in the current general capture devices for capturing solid substances, the temperature of the exhaust gas is mainly heated by a heater in order to prevent the exhaust gas from being captured at the inlet and thus clogging, or for the exhaust gas without the risk of clogging, the solid reaction by-products are condensed and captured on the surface of the capture plate of the internal capture device after the exhaust gas flows in without being heated by the heater. This structure has a structural problem that it is difficult to capture solid high dielectric constant (High K) substances such as Al, Hf and Ze contained in the high dielectric constant (High K) deposition precursor contained in the exhaust gas.

[0010] That is, when the precursor for aluminum oxide deposition, namely trimethylaluminum (TMA), the precursor for hafnium oxide deposition, namely tetrakis(ethylmethylamido)hafnium (TEMAHf), and the precursor for zirconium oxide deposition, namely cyclopentadienyl tris(dimethylamino)zirconium (Cp-Zr), are contained in the exhaust gas and discharged, it will be difficult to effectively capture the high dielectric constant (High K) substances deposited by the oxidation reaction, resulting in a structural problem of discharging them outside the capture device.

[0011] However, there is no capture device that can efficiently capture the high dielectric constant (High K) material contained in the high dielectric constant (High K) deposition precursor, so there is an urgent need to develop a corresponding solution.

[0012] Prior art literature

[0013] Patent Literature

[0014] (Patent Document 1) Korean Patent Registration No. 10-1806480 (December 1, 2017)

[0015] (Patent Document 2) Korean Patent Gazette Registration No. 10-2154196 (2020.09.03.)

[0016] (Patent Document 3) Korean Patent Gazette Registration No. 10-2311930 (October 6, 2021)

[0017] (Patent Document 4) Korean Patent Gazette Registration No. 10-2228180 (2021.03.10.) Summary of the invention

[0018] Problem to be solved

[0019] In order to solve the above-mentioned problems, the purpose of the present invention is to provide a reaction byproduct capturing device that, when a high dielectric constant (High K) material with a relatively high dielectric constant is used to deposit a semiconductor dielectric film in an oxidation process in order to achieve miniaturization of semiconductor circuits, if a high dielectric constant (High K) deposition precursor supplied into a process chamber is discharged together with an exhaust gas, the high dielectric constant (High K) material is thermally decomposed at the inlet of the capturing device by using the high temperature of a heater, and then an oxidation reaction is induced in a box-type capturing portion having a low temperature region by means of a cooling plate portion, thereby capturing the oxide grown into a powder state.

[0020] Another object of the present invention is to provide a reaction byproduct capture device which is equipped with two or more box-type capture sections consisting of an internal capture plate section and an external capture box surrounding the same, and after horizontally arranging them at a certain interval, a quadrilateral surface-shaped cooling plate section is arranged in the interval space separated from the outer contour of each box-type capture section and cooling water is circulated, so that the low-temperature area can be expanded to the maximum extent and a low-temperature area for heat conduction with the capture box of the box-type capture section can be uniformly formed in the capture plate section accommodated inside, so that the oxidation reaction can be carried out efficiently and the high dielectric constant (High K) material can be accumulated inside the capture box after deposition and capture.

[0021] Another object of the present invention is to provide a reaction byproduct capture device equipped with a cooling plate portion, in which three cooling water storage plates are connected by connecting pipes in order to form a uniform low-temperature area in each box-type capture portion separated into two, so that the cooling water flowing in is circulated and discharged in sequence, thereby maintaining a uniform low-temperature area in each cooling water storage plate, and then a flow path is formed by installing a horizontal baffle and a plurality of vertical baffles inside each cooling water storage plate, thereby circulating the flow of cooling water uniformly, and a part of the two side surfaces of the baffle protrudes to the outside of the cooling water storage plate to fix the position of the baffle while forming a vortex and causing hysteresis in the flow of the exhaust gas flowing along the cooling water storage plate, thereby improving its cooling efficiency.

[0022] Another object of the present invention is to provide a reaction byproduct capturing device which can prevent the captured reaction byproducts in the form of powder oxide from being directly discharged to the lower part by vertically composing the capture plates of the capture plate portion installed inside the capture box of the box-type capturing portion and forming the holes formed in the capture plates of each section with different sizes and shapes. Instead, the flow path of the captured reaction byproducts can be changed in the process of passing through the capture plates of each section and the reaction byproducts can be captured and accumulated in multiple sections inside the capture box. Furthermore, by forming a mesh filter outlet protruding toward the inside of the outer shell at the upper part of the lower outlet of the outer shell, the direct outflow of the reaction byproducts can be minimized, thereby removing the solid matter flowing into the vacuum pump in advance and thereby improving the durability.

[0023] Another object of the present invention is to provide a reaction byproduct capture device that prevents exhaust gas from condensing in the early stage, minimizes the heat generated by the heater, and increases the high-temperature contact of the exhaust gas flowing in by making the vertical height of the diffuser in the heater part relatively higher than that of a conventional diffuser and making the overall number of radially arranged diffusers relatively smaller than that of a conventional diffuser, thereby maximizing the thermal decomposition of the precursor and supplying it, thereby increasing the chemical reactivity in the box-type capture part.

[0024] Another object of the present invention is to provide a reaction byproduct capture device that can prevent stagnation of exhaust gas flow and maintain smooth flow in a downward direction by making the inner wall capture plates formed in multiple sections in the lower area of ​​the inner wall of the shell protrude longer in the inner direction than the inner wall capture plates formed in multiple sections in the upper area and forming multiple holes in each inner wall capture plate.

[0025] Means of solving the problem

[0026] In order to achieve the above-mentioned purpose and solve the existing problems, the present invention provides a semiconductor engineering reaction byproduct capture device induced by thermal decomposition in a high temperature region and oxidation reaction in a low temperature region, wherein the exhaust gas discharged from the process chamber is heated in a heater part and the reaction byproduct is captured in a housing, comprising:

[0027] a first dispersion and capture section for capturing reaction byproducts while dispersing exhaust gas containing a high dielectric constant (High K) substance that flows in from a gas inlet of the housing and is thermally decomposed in the heater section to a lower box-shaped capture section;

[0028] A box-type capture section, comprising a capture box for accumulating captured powdered oxides while accommodating the inflowing exhaust gas into an internal space formed with a low-temperature region and then discharging the gas downward, and a capture plate section installed inside the capture box and having a plurality of capture plates installed in multiple stages in a vertically spaced manner for growing a solid high dielectric constant (High K) material into powdered oxides through an oxidation reaction in the low-temperature region;

[0029] A cooling plate portion for circulating cooling water supplied from the outside and then discharging it in order to maximize the area of ​​the low temperature region in the box-shaped capture portion; and

[0030] The second dispersion and capture section captures the reaction by-products while dispersing the exhaust gas that has passed through the box-type capture section downward.

[0031] As a preferred embodiment, the present invention is characterized in that: the box-shaped capturing parts are arranged with two or more at a certain interval in the width direction,

[0032] The cooling plate portion is formed by connecting the first cooling water storage plate, the second cooling water storage plate and the third cooling water storage plate to store and supply cooling water in sequence. A cooling water storage plate is respectively arranged between the two box-shaped capture parts and on one side of the outer side.

[0033] As a preferred embodiment, the present invention is characterized in that: the capture box is made of a metal material of a rectangular box structure having a plurality of inflow holes formed on the upper side and a plurality of exhaust holes formed on the lower side, so that a uniform low-temperature area is formed by means of the heat source supplied from the cooling plate part.

[0034] Guide plates are formed at both side ends of the upper surface to the lower side of the first dispersion and capture portion, thereby guiding the flow of the exhaust gas to the inlet hole and capturing the reaction by-products.

[0035] A plurality of vertical plates are formed on one side surface to protrude in a lateral direction, so as to capture reaction byproducts in the exhaust gas flowing in the lateral direction.

[0036] As a preferred embodiment, the present invention is characterized in that: the capture plate portion is composed of multiple capture plates separated by a certain distance up and down on the vertical support rods on both sides, and each capture plate is composed of multiple sections in an alternating manner to form a capture plate with multiple rectangular holes or circular holes. The closer to the lower capture plate, the smaller the size of the rectangular holes or circular holes and the greater the number of holes.

[0037] As a preferred embodiment, the present invention is characterized in that: the cooling plate portion is composed of a first cooling water storage plate, a second cooling water storage plate and a third cooling water storage plate connected by connecting pipes, thereby storing and supplying cooling water in sequence, and the internal space is divided into an upper end layer and a lower end layer at a certain length by means of horizontal baffles to form a flow path for cooling water to flow in sequence, and a plurality of vertical baffles are installed alternately up and down at a certain interval in the upper end layer and the lower end layer, respectively, to form a zigzag flow path for cooling water.

[0038] As a preferred embodiment, the present invention is characterized in that: a plurality of low-temperature vortex sheets are formed in the horizontal baffle and the vertical baffle, and a part of the side portion protrudes to the outside of the cooling water storage plate at a certain interval, thereby increasing the vortex formation and the low-temperature area.

[0039] As a preferred embodiment, the present invention is characterized in that: a plurality of inner wall capture plates are formed in the housing along the inner wall of the rectangular box shape in multiple sections, wherein the inner wall capture plates formed in multiple sections in the lower area protrude with a longer length and are formed with multiple holes compared with the inner wall capture plates in the upper area, so as to capture while forming eddy currents,

[0040] A mesh filter outlet is installed on one side of the upper portion of the gas outlet formed at one position of the lower plate in the housing, so that the exhaust gas flows in through the mesh filter formed around it and then is discharged to the gas outlet.

[0041] As a preferred embodiment, the present invention is characterized in that: the cooling water discharged after being supplied to the cooling plate portion for circulation flows in through the cooling water inlet installed on the upper plate of the outer shell, and then flows into the first cooling water storage plate of the cooling plate portion connected to the upper cooling rod installed on the upper part of the outer side surface of the outer shell, and then passes through the second cooling water storage plate and the third cooling water storage plate in sequence for storage and circulation to form a low-temperature area in the box-type capture portion, and then flows upward after being discharged through the lower cooling rod formed at the lower part of the outer side surface of the outer shell connected to the third cooling water storage plate, and is then supplied to the cooling water flow path formed on the upper plate for circulation, and is discharged through the cooling water discharge outlet after cooling the upper plate of the outer shell.

[0042] As a preferred embodiment, the present invention is characterized in that: the heater unit includes: a heater for thermally decomposing a high dielectric constant (High K) deposition precursor for oxidation engineering or an oxide deposition precursor contained in the exhaust gas by using a high temperature to enhance chemical reactivity; and a diffuser for increasing the high temperature contact of the heated exhaust gas while dispersing it in a lateral direction by being radially installed on the upper part of the heater;

[0043] The heater heats the precursor contained in the exhaust gas flowing in to 100°C to 330°C when trimethylaluminum (TMA), heats it to above 300°C when tetrakis(ethylmethylamino)hafnium (TEMAHf), and heats it to above 200°C for thermal decomposition when cyclopentadienyltris(dimethylamino)zirconium (Cp-Zr).

[0044] As a preferred embodiment, the present invention is characterized in that: the first dispersion and capture part is composed of a rectangular plate suspended on the upper plate of the outer shell, and a plurality of rectangular holes are arranged in an area located at the lower part corresponding to the box-type capture part area, and the remaining area is composed of a guide surface for inducing the flow of the exhaust gas dispersed to the side and flowing along the wall of the outer shell to the direction of the rectangular holes.

[0045] As a preferred embodiment, the present invention is characterized in that: the second dispersion and capture part is composed of a rectangular plate including a region where a plurality of rectangular holes are arranged for guiding the exhaust gas to the lower part and a guide surface region for guiding the exhaust gas from the periphery to one side of the rectangular hole, in which the opening area of ​​the hole in the central part is smaller, and the opening area is larger as it is closer to the periphery,

[0046] The rectangular plate supports the loads of the box-shaped capturing part and the cooling plate part at a certain interval by means of spaced support rods installed on the lower plate.

[0047] As a preferred embodiment, the present invention is characterized in that: a plurality of vertical plates facing each other in the diagonal direction are protruded upward on both sides of the upper side of the rectangular plate and welded to the side of the capture box composed of two, so as to capture the reaction by-products contained in the exhaust gas flowing along the side direction.

[0048] A plurality of support plates are formed at a plurality of positions on one side of the upper side surface, so as to support the loads of the first cooling plate, the second cooling plate and the third cooling plate of the cooling plate part at a predetermined interval below each other.

[0049] As a preferred embodiment, the present invention is characterized in that guide plates are formed between the multiple rectangular holes arranged on the lower side of the rectangular plate and protrude vertically downward, so as to uniformly guide the flow of the descending exhaust gas and capture the reaction by-products.

[0050] Effects of the Invention

[0051] By means of the reaction byproduct capture device according to the present invention having the features as described above, when a high dielectric constant (High K) deposition precursor for an oxidation process supplied into a process chamber in a process of manufacturing a semiconductor by a semiconductor insulating film process using a high dielectric constant (High K) material with a relatively high dielectric constant in order to achieve miniaturization of semiconductor circuits is contained in the exhaust gas after the deposition process and is discharged, the solid high dielectric constant (High K) material contained in the precursor is thermally decomposed by heating it with a heater at the inlet of the capture device, and then the flow of the exhaust gas is induced to the box-shaped capture portion and the temperature of the exhaust gas is cooled to a temperature required for the high dielectric constant (High K) material to grow into a powdered oxide by using a cooling plate portion, thereby inducing an oxidation reaction in a low temperature region and causing it to grow, thereby capturing only the solid reaction byproducts in the precursor contained in the exhaust gas.

[0052] In addition, the box-type capture portion of the present invention is composed of an internal capture plate portion and an external capture box surrounding the internal capture plate portion and is equipped with more than two of the box-type capture portions. After arranging them horizontally at a certain interval, a quadrilateral surface-shaped cooling plate portion is arranged in the interval space separated from the outer contour of each box-type capture portion and cooling water is circulated, thereby maximizing the low-temperature area and uniformly forming a low-temperature area in the capture plate portion housed inside for heat conduction with the capture box of the box-type capture portion, thereby allowing the oxidation reaction to be efficiently carried out and high dielectric constant (HighK) materials to be deposited and captured.

[0053] In addition, the cooling plate portion of the present invention connects three cooling water storage plates through connecting pipes in order to form a uniform low-temperature area in each box-type capture portion separated into two, so that the cooling water flowing in can be circulated and discharged in sequence, thereby maintaining a uniform low-temperature area for each cooling water storage plate, and then a flow path is formed by installing a horizontal baffle and a plurality of vertical baffles inside each cooling water storage plate, so that the cooling water flows from one layer of the lower end layer and the upper end layer to the other layer in a zigzag manner while flowing to one layer of the adjacent cooling water storage plate, thereby circulating and discharging the cooling water uniformly, and by making a part of the two side surface portions of the baffle protrude to the outside of the cooling water storage plate, while fixing the position of the baffle, a vortex is formed in the flow of the exhaust gas flowing along the cooling water storage plate and causing it to lag, thereby improving its cooling efficiency.

[0054] In addition, the present invention constructs each capture plate of the capture plate part installed inside the capture box of the box-type capture part into multiple vertical sections and forms holes in the capture plates of each section into different sizes and shapes, thereby preventing the captured reaction by-products in the form of powder oxide from being directly discharged to the lower part. Instead, the flow path of the captured reaction by-products can be changed in the process of passing through the capture plates of each section and they can be captured and accumulated in multiple sections inside the capture box. Furthermore, by forming a mesh filter discharge port protruding toward the inside of the outer shell at the upper part of the lower discharge port of the outer shell, the direct outflow of the reaction by-products can be minimized, thereby removing the solid matter flowing into the vacuum pump in advance and thereby improving durability.

[0055] In addition, the present invention makes the vertical height of the diffuser located at the top of the heater relatively higher than that of a conventional diffuser and makes the overall number of radially arranged diffusers relatively smaller than that of a conventional diffuser, thereby preventing exhaust gas from condensing and increasing the high-temperature contact of the exhaust gas flowing in, so that it can be supplied after maximizing the thermal decomposition of the precursor and thereby increasing the chemical reactivity in the box-type capture portion.

[0056] In addition, the present invention makes the inner wall capture plate formed in multiple sections in the lower area of ​​the inner wall of the shell have a greater inner side protruding length than the inner wall capture plate formed in multiple sections in the upper area and forms multiple holes in each inner wall capture plate, thereby preventing the flow of exhaust gas from stagnation and maintaining smooth flow in the downward direction.

[0057] As described above, the present invention is a useful invention having various effects and has good industrial application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] Figure 1 1 is an exploded perspective view of a reaction byproduct capture device according to one embodiment of the present invention.

[0059] Figure 2 It is a perspective view illustrating the interior of a reaction by-product capturing device according to one embodiment of the present invention.

[0060] Figure 3 FIG. 1 is a cross-sectional view of a reaction byproduct capture device according to an embodiment of the present invention.

[0061] Figure 4 It is an exploded perspective view illustrating the structure of a box-shaped capturing portion according to one embodiment of the present invention.

[0062] Figure 5 It is a perspective view illustrating the coupling structure of a box-shaped capturing portion according to one embodiment of the present invention.

[0063] Figure 6 It is an exploded perspective view illustrating the structure of a cooling plate portion according to an embodiment of the present invention.

[0064] (Explanation of Reference Numerals)

[0065] 1: Shell 2: Heater

[0066] 3: First dispersion capture section 4: Box-type capture section

[0067] 5: Cooling plate 5a: Inflow pipe

[0068] 5b: discharge pipe 5c, 5d: connecting pipe

[0069] 5e: horizontal baffle 5f: vertical baffle

[0070] 5g: upper layer 5h: lower layer

[0071] 5i: Low temperature vortex sheet 6: Second dispersion and capture part

[0072] 11: Inner wall 12: Upper plate

[0073] 13: Lower plate 21: Heater

[0074] 22: Diffuser 23: Heater power supply

[0075] 31: Rectangular plate 32: Rectangular hole

[0076] 33: Guide surface 41: Capture box

[0077] 41a: Inflow hole 41b: Exhaust hole

[0078] 42: Capture plate 51: First cooling water storage plate

[0079] 52: Second cooling water storage plate 53: Third cooling water storage plate

[0080] 61: Rectangular plate 62: Rectangular hole

[0081] 63: Guide surface 64: Vertical plate

[0082] 65: Support plate 66: Guide plate

[0083] 111: Inner wall capture plate 111a: Hole

[0084] 121: Gas inlet 122: Cooling water flow path

[0085] 123: Flow channel cover 124: Cooling water inlet

[0086] 125: Cooling water outlet 126: Upper cooling rod

[0087] 127: Lower cooling rod 128: Cooling water pipe

[0088] 129: heater rack 129a: capture unit rack

[0089] 131: Gas outlet 132: Mesh filter outlet

[0090] 132a: mesh filter 133: spaced support rods

[0091] 411: Guide plate 412: Vertical plate

[0092] 421: Capture plate 421a: Rectangular hole

[0093] 421b: circular hole 422: vertical support rod DETAILED DESCRIPTION

[0094] Next, the composition and function of the embodiment according to the present invention will be described in detail with reference to the accompanying drawings. In addition, in the process of describing the present invention, when it is determined that the specific description of the relevant known functions or compositions may cause the gist of the present invention to become unclear, the detailed description related thereto will be omitted.

[0095] Figure 1 is an exploded perspective view of a reaction byproduct capture device according to one embodiment of the present invention, Figure 2 is a perspective view illustrating the interior of a reaction byproduct capture device according to one embodiment of the present invention. Figure 3 is a cross-sectional view of a reaction byproduct capture device according to one embodiment of the present invention, Figure 4 This is an exploded perspective view illustrating the structure of a box-shaped capture portion according to one embodiment of the present invention. Figure 5 is a perspective view illustrating the combined structure of the box-shaped capture portion according to one embodiment of the present invention, and Figure 6 It is an exploded perspective view illustrating the structure of a cooling plate portion according to an embodiment of the present invention.

[0096] As shown in the figure, the capture device according to the present invention is a reaction byproduct capture device installed on the exhaust line between the process chamber and the vacuum pump in order to capture only the solid reaction byproducts in the precursor contained in the exhaust gas when a high dielectric constant (High K) deposition precursor for oxidation process supplied to the process chamber during the process of manufacturing semiconductors by using a semiconductor dielectric film process of a high dielectric constant (High K) material with a relatively high dielectric constant is discharged after the deposition process in order to realize the miniaturization of semiconductor circuits in the process chamber of producing semiconductors. The device includes a housing 1, a heater part 2, a first dispersion capture part 3, a box-type capture part 4, a cooling plate part 5 and a second dispersion capture part 6.

[0097] In the capture device according to the present invention as described above, in order to prevent corrosion caused by exhaust gas exhausted from the process chamber, it is made of materials such as titanium, stainless steel or aluminum.

[0098] The outer shell 1 is in the shape of a rectangular box with a hollow interior. It serves to store exhaust gas. When the high dielectric constant (High K) deposition precursor undergoes thermal separation while passing through the heater section 2 located on the upper side, the exhaust gas containing the high dielectric constant (High K) substance with enhanced chemical reactivity flows into the box-type capture section 4 installed inside, and is captured as oxide in a powdered state through an oxidation reaction at a low temperature.

[0099] The upper part of the housing is open, so that after the box-shaped capturing part is housed and installed, the upper plate is covered and fixed by bolts or other fastening components.

[0100] A plurality of inner wall capture plates 111 protruding inwardly are formed on the inner wall 11 of the housing at multiple stages along the outer circumference at a certain interval.

[0101] At this time, by making the inner wall capture plate formed in multiple sections in the lower area of ​​the inner wall of the shell protrude longer in the inner direction than the inner wall capture plate formed in multiple sections in the upper area and forming multiple holes 111a on the surface, the flow of the exhaust gas can be prevented from stagnating and the flow in the downward direction can be maintained smoothly.

[0102] By providing the inner wall capture plate 111 as described above, the exhaust gas flowing into the interior of the housing can collide and form a vortex, thereby causing the flow of the exhaust gas to stagnate and thereby improving the capture efficiency of the reaction by-products.

[0103] The upper plate 12 constituting the upper portion of the housing can function as a lid covering the upper portion of the housing which is open at the upper portion, and is formed with a gas inlet 121 protruding upward for exhaust gas to flow in, thereby receiving exhaust gas exhausted from a process chamber (not shown).

[0104] Furthermore, a heater power supply unit 23 is mounted on the upper plate. The heater power supply unit 23 supplies power to the heater unit mounted on the bottom surface thereof and includes a temperature sensor that measures the temperature in order to control the power according to the internal temperature thereof.

[0105] In addition, a cooling water flow path 122 is formed in the form of a groove on the upper side of the upper plate to prevent the housing from being heated when the heater installed on the lower side of the upper plate inside the housing is working. The upper part of the cooling water flow path is covered by a flow path cover 123. Although not shown in the figure, the flow path cover can be fastened in a manner including sealing treatment to achieve water tightness, and as its fastening method, it can be fastened by means such as embedding, welding, and bolting.

[0106] The cooling water flow path 122 is configured such that cooling water supplied from an external cooling water tank (not shown) flows in through a cooling water inlet 124 and then flows out through a cooling water outlet 125 for circulation. In order to prevent the inflowing cooling water and the discharged cooling water from mixing with each other, the cooling water flow path is not connected but is formed in a manner with a boundary portion. Water or a refrigerant can be used as the cooling water.

[0107] At this time, the cooling water flowing in through the cooling water inlet 124 will not flow directly along the cooling water flow path 122, but will be supplied to the downward direction through the cooling water pipe 128, and then flow into the first cooling water storage plate 51 of the cooling plate part 5 installed inside the shell through the inlet pipe connected to the upper cooling rod 126 installed on the upper part of the outer surface of the shell, and then pass through the second cooling water storage plate 52 and the third cooling water storage plate 53 in turn for storage and circulation to form a low-temperature area in the box-type capture part 4, and then be discharged to the lower cooling rod 127 formed at the lower part of the outer side surface of the shell through the discharge pipe connected to the third cooling water storage plate 53 and flow upward through the cooling water pipe 128, and then be supplied to the cooling water flow path 122 formed on the upper plate to circulate and cool the upper plate of the shell, and finally be discharged through the cooling water discharge port 125.

[0108] Furthermore, a plurality of heater racks 129 for fixing the heater unit 2 in a hanging manner are provided on the bottom surface of the upper plate.

[0109] In addition, a plurality of catching part racks 129a are provided on the bottom surface of the upper plate to fix the first dispersing catching part 3 in a suspended manner. The length of the catching part rack 129a is greater than the length of the heater rack 129, so that the catching part rack 129a is located below the heater part.

[0110] A gas exhaust port 131 is formed downward at a position on the lower plate constituting the outer shell, thereby serving as a channel for exhausting exhaust gas after removal of reaction by-products, and a mesh filter exhaust port 132 protruding toward the interior of the outer shell is provided above the lower exhaust port, thereby minimizing the phenomenon of reaction by-products directly outflowing downward.

[0111] The upper part of the cylinder of the mesh filter outlet 132 is closed and the lower part is open, and the periphery of the cylinder is formed by the mesh filter 132a, so that even if there are reaction byproducts in the exhaust gas flowing in from the upper side, the closed upper part can prevent the byproducts from being directly discharged from the lower gas outlet 131 formed on the lower plate, but they are captured again by the mesh filter formed around the mesh filter outlet during the flow of the exhaust gas flowing in the lateral direction. In this way, the outflow of the reaction products contained in the exhaust gas can be minimized.

[0112] In addition, spaced support rods 133 are formed protruding upward near each vertex of the upper surface of the lower plate 13. At least four spaced support rods 133 are fastened to the lower part of the second dispersed capture part 6 located at the upper part, thereby supporting the load of the box-shaped capture part 4, the cooling plate part 5 and the second dispersed capture part 6 while being spaced from the upper side surface of the lower plate by a certain height.

[0113] In addition, with the help of the separation height as described above, a space for configuring the mesh filter exhaust port 132 can be ensured between the lower plate 13 and the second dispersion capturing portion 6, so that the exhaust gas dispersed by the second dispersion capturing portion 6 and flowing in the downward direction flows into the mesh filter exhaust port 132 along the side direction and then flows into the gas exhaust port 131 protruding from the lower portion of the lower plate.

[0114] The heater section 2 includes: a heater 21, which enhances chemical reactivity by utilizing high temperature to thermally decompose a high dielectric constant (High K) deposition precursor for oxidation engineering or an oxide deposition precursor contained in the exhaust gas flowing in through a gas inlet 121 formed on an upper plate of the housing; and a diffuser 22, which disperses the heated exhaust gas in a lateral direction by being radially installed on an upper portion of the heater.

[0115] The heater 21 and the diffuser 22 are fastened together by a plurality of heater racks 129 formed at the lower portion of the upper plate, so that they are installed and fixed in a state of being suspended at the lower portion of the upper plate.

[0116] The heat source of the heater is heated to the thermal decomposition temperature of the substance contained in the high dielectric constant (High K) deposition precursor or oxide deposition precursor contained in the inflowing exhaust gas when power is applied from the heater power supply unit 23 installed on the upper side of the upper plate, thereby enhancing its chemical reactivity.

[0117] For example, as an example of a precursor contained in the exhaust gas, in the case of trimethylaluminum (TMA), a precursor for aluminum oxide (Al2O3) deposition, it is supplied after being heated to its thermal decomposition temperature of 100°C to 330°C by a heater. In addition, in the case of tetrakis(ethylmethylamido)hafnium (TEMAHf), a precursor for hafnium oxide (HfO2) deposition, it is supplied after being heated to its thermal decomposition temperature of 300°C or more by a heater. In addition, in the case of cyclopentadienyl tris(dimethylamino)zirconium (Cp-Zr), a precursor for zirconium oxide (ZrO2) deposition, it is supplied after being heated to its thermal decomposition temperature of 200°C or more by a heater.

[0118] In addition, in addition to using the above-mentioned precursor of a high dielectric constant (High K) material with a relatively high dielectric constant, the present invention can also be applied to a process in which the heating temperature of the heater is controlled to reach a thermal decomposition temperature that meets the thermal decomposition temperature of the precursor used in the process for depositing other oxide materials, thereby thermally decomposing the solid particles of the precursor contained in the exhaust gas and causing an oxidation reaction to occur in the low-temperature region of the box-type capture section 4, thereby capturing the oxide in a powdered state.

[0119] Furthermore, the present invention is characterized in that the vertical height of the diffuser located at the upper portion of the heater part is made relatively higher than that of the conventional diffuser and the total number of the diffusers arranged radially is made relatively smaller than that of the conventional diffuser.

[0120] As an example, five or so diffusers can be arranged radially to increase the high-temperature contact of the exhaust gas flowing in with the heat source using the heater for heat conduction. The number of diffusers can be reduced to reduce the space occupancy of the diffusers in the space of the inflow part, thereby preventing blockage caused by reaction by-products and minimizing heat loss from the heater heated to a high temperature. At the same time, the problem of damage to the heater can be minimized by improving the convenience of washing the heater.

[0121] Thereby, the thermal decomposition of the precursor contained in the exhaust gas can be maximized and supplied to the box-type capturing part in a state with enhanced chemical reactivity, thereby enhancing the chemical reactivity of conversion into oxides and efficiently capturing them as solid powder compounds.

[0122] The first dispersion and capture section 3 ensures that the reactant product can be uniformly captured by dispersing and supplying the exhaust gas containing the high dielectric constant (High K) substance that is thermally decomposed while passing through the heater section 2 to the box-shaped capture section 4 located below.

[0123] The first dispersing and capturing part 3 is fastened by a plurality of capturing part racks 129a formed at the lower part of the upper plate of the housing, so as to be installed and fixed in a state of being suspended at the lower part of the upper plate. The length of the capturing part rack 129a is greater than the length of the heater rack 129, so that the capturing part rack 129a is located at the lower part of the heater part.

[0124] The first dispersion capture section 3 is composed of a rectangular plate 31 similar to the internal space of the outer shell 1, and is formed with a plurality of rectangular holes 32 arranged in a plate area corresponding to an area in which two box-type capture sections 4 are installed at a certain interval along the length direction at its lower part, so that the flow of the main exhaust gas is supplied to the upper end of the box-type capture section 4.

[0125] To this end, the rectangular plate 31 is formed in a manner close to the inner wall of the outer shell 1 and a guide surface 33 is formed in an area where the rectangular hole 32 is not formed in the surrounding portion, so that the main flow of the exhaust gas that is dispersed laterally by means of the diffuser 22 of the heater portion 2 and flows along the inner wall of the outer shell flows toward the center along the guide surface 33 and then flows to the lower box-type capture portion 4 through the rectangular hole 32.

[0126] In addition, a portion of the exhaust gas flowing through the outer side of the rectangular plate 31 formed in a manner close to the inner wall of the shell will form a vortex with the help of the inner wall capture plate 111 protruding from the inner wall of the shell and formed in multiple stages, thereby flowing toward one side of the box-type capture part 4 or downward to capture the reaction by-products.

[0127] The box-type capture part 4 includes: a capture box 41 that collects the inflowing exhaust gas into an internal space formed with a low-temperature region and then discharges it downward while accumulating the captured powdered oxide; and

[0128] The capture plate portion 42 includes a plurality of capture plates 421 installed in multiple stages in the upper and lower parts of the capture box 41 , so as to capture the solid high dielectric constant (High K) material in the form of powder oxides through oxidation reaction in a low temperature region.

[0129] In this case, the box-shaped capturing portion 4 is composed of two or more box-shaped capturing portions 4 spaced apart at a certain interval in the width direction.

[0130] The reason why more than two box-type capture sections 4 are composed in the manner as described above is that a uniform low-temperature area is simultaneously formed around each box-type capture section 4 by equipping it with a plurality of rectangular cooling plate sections 5 whose two side surfaces are larger than the height of the box-type capture section 4 and arranging them on one side of the box-type capture section 4 on one side and the other side of the box-type capture section 4 on the other side and between the box-type capture section 4 on one side and the box-type capture section 4 on the other side. The high dielectric constant (High K) material can be cooled simultaneously to the temperature required for the growth of powdered oxides, thereby inducing oxidation reactions in the low-temperature areas and causing them to grow, thereby efficiently capturing solid reaction by-products that undergo thermal decomposition contained in the exhaust gas in the plurality of box-type capture sections 4.

[0131] If the two box-type capture parts 4 are not separated but one box-type capture part 4 of the same volume is used, although an oxidation reaction can occur in the side part of the low-temperature area formed by the cooling plate part 5 and the high dielectric constant (HighK) material can grow into a powdered oxide, the chemical reaction cannot occur smoothly because the area of ​​the low-temperature area is reduced, so the capture reaction cannot be completed efficiently, thereby resulting in a problem of wasting capture space.

[0132] As an embodiment of a structure in which a plurality of holes are formed at the upper and lower parts of the capture box 41, a rectangular box structure may be formed with four inlet holes 41a formed at the upper side and four exhaust holes 41b formed at the lower side.

[0133] Thereby, it is possible to form an exhaust gas flow path in which the exhaust gas flowing in from the upper portion through the inflow hole is accommodated inside and then exhausted only through the exhaust hole in the lower portion.

[0134] All surfaces of the capture box 41 except the inlet 41a and the exhaust hole 41b are of rectangular structure, and each surface is made of a metal material with high thermal conductivity efficiency, so as to quickly conduct heat to the low-temperature heat source supplied from the cooling plate portion 5 and thereby form a uniform low-temperature area.

[0135] Therefore, the capture plate portion 42 installed inside the capture box 41 can simultaneously form a uniform low-temperature region in the entire region and cause an oxidation reaction, thereby growing a high dielectric constant (High K) substance contained in the inflowing exhaust gas into a powdered oxide.

[0136] In addition, at both side ends of the upper surface of the rectangular hexahedral capture box 41, a guide plate 411 approximately the width of the short side is formed to protrude upward until the lower surface of the first dispersion capture section 3, thereby preventing the exhaust gas supplied to the lower part from the first dispersion capture section 3 from flowing to the outside and instead guiding it to the side of the upper inflow hole of the capture box 41.

[0137] In addition, on one side of one of the capture boxes 41 composed of two capture boxes, a plurality of vertical plates 412 are arranged and protrude in the lateral direction and have a height slightly smaller than the vertical height of the capture box, so that the high dielectric constant (High K) material contained in the exhaust gas that is unable to flow to the upper inlet side of the capture box 41 but flows downward in the lateral direction is grown into a powdered oxide through an oxidation reaction and is captured.

[0138] In addition, on the other side of the remaining capture box 41, a plurality of vertical plates 412 are arranged and protrude in the lateral direction and have a height slightly smaller than the vertical height of the capture box, so that the high dielectric constant (High K) substance contained in the exhaust gas that is unable to flow to the upper inlet side of the capture box 41 but flows downward in the lateral direction is grown into a powdered oxide through an oxidation reaction and captured.

[0139] In addition, in the two capture boxes 41 on one side of which a plurality of vertical plates 412 are formed as described above, vertical plates of the second dispersed capture portion 6 are arranged and protruded laterally on the remaining side surfaces where the vertical plates 412 are not formed to form a vertical height approximately equal to that of the vertical plates 412 formed on one side and the other side surfaces of the two capture boxes, thereby allowing the high dielectric constant (High K) substance contained in the exhaust gas that is unable to flow toward the upper inlet side of the capture box 41 but flows downward in the side direction to grow into a powdered oxide through an oxidation reaction and capture it.

[0140] In the case where the flow of the exhaust gas flowing toward the upper surface and the side surface of the capture box 41 is restricted as described above, since a plurality of cooling plate portions 5 having a rectangular surface shape greater than the height of the box-type capture portion 4 are arranged in the longitudinal direction space of the capture box, the flow of the exhaust gas can be blocked between one side surface of the box-type capture portion 4 on one side and the other side surface of the box-type capture portion 4 on the other side and between the separated box-type capture portions 4, thereby causing the exhaust gas to flow into the upper end inflow hole 41a of each capture box 41.

[0141] In the capture plate portion 42 , a plurality of capture plates 421 are formed in multiple stages at a certain interval in the vertical direction by means of vertical support rods 422 on both sides vertically installed inside the box-shaped capture portion 4 .

[0142] Each capture plate 421 constituting the capture plate portion 42 may be mounted in multiple sections on the left and right vertical support rods 422 by welding or embedding.

[0143] In addition, the vertical support rod 422 is installed and fixed to the bottom surface of the box-shaped capture part 4 by welding or embedding. Because the height of the vertical support rod 422 is only required to allow the capture plate 421 to be installed in a manner of being spaced a certain distance apart from top to bottom, it can be slightly smaller than the height of the capture part 4.

[0144] As described above, the capture plate portion 42 composed of multiple sections of capture plates 421 can capture the solid high dielectric constant (High K) substance contained in the exhaust gas after thermal decomposition in the form of powdered oxide through an oxidation reaction when the exhaust gas flowing in forms a low-temperature area inside the box-type capture portion 4 with the help of the heat source heat conducted from the cooling plate portion 5.

[0145] As an embodiment, the capturing plates 421 are composed of six, and are alternately configured in multiple stages such that when the rectangular hole 421 a is formed in the capturing plate 421 located at the upper portion, the circular hole 421 b is formed in the capturing plate 421 located at the lower portion.

[0146] Furthermore, the rectangular holes formed in the upper capture plate 421 are larger than the rectangular holes formed in the lower capture plate, so that the capture plates 421 are formed in such a manner that the smaller the rectangular holes are, and the greater the number of the rectangular holes is, the closer to the lower capture plate.

[0147] Similarly, the circular holes formed in the upper capture plate 421 are larger than the circular holes formed in the lower capture plate, so that each segment is formed in such a way that the closer to the lower capture plate, the smaller the circular holes and the greater the number of circular holes.

[0148] By alternately forming holes of different shapes on the capture plate 421 constituting the upper and lower sections as described above and forming smaller and more holes toward the lower portion, the inflowing exhaust gas can form different flows due to different shapes.

[0149] That is, when the same size and the same shape are repeatedly adopted, the capture reaction cannot be effectively carried out because there is no load that hinders the flow of the exhaust gas. However, by adopting different shapes and sizes and the shapes are smaller and more numerous as they are closer to the bottom, the descending flow can undergo a collision and discharge process when passing through the capture plates 421 of each section, thereby forming a different exhaust gas flow each time and forming a vortex with the help of the flow velocity difference, thereby increasing the residence time in each capture plate 421 and allowing a sufficient oxidation reaction to occur, thereby allowing the high dielectric constant (High K) substance contained in the inflowing exhaust gas to grow into a powdered oxide and capture it.

[0150] Since the holes at the upper end of the capture plate portion 42 are relatively large, the captured oxides will accumulate in the lower capture plate 421 having relatively small holes and gradually fill up the inner space of the box-type capture portion 4 as the capture reaction increases.

[0151] Furthermore, the exhaust gas after the solid reaction by-products are removed is exhausted downward through the exhaust holes 41 b formed at the lower portion of the box-shaped trapping section 4 and falls toward the second dispersion trapping section 6 .

[0152] The cooling plate portion 5 is used to maximize the area of ​​the low-temperature region in the box-type capture portion 4, and is arranged between two box-type capture portions 4 separated in the width direction and on one side of the box-type capture portion 4 and on the other side of the box-type capture portion 4 on the other side. In order to form a uniform low-temperature region by conducting heat to one side of the box-type capture portion 4, the first cooling plate 51, the second cooling plate 52 and the third cooling plate 53 are connected by connecting pipes and cooling water is supplied in sequence thereby.

[0153] Specifically, in the cooling plate portion 5, cooling water flows in through the upper cooling rod 126 installed on the outer side of the shell through the one side inlet pipe 5a, and then circulates in the first cooling plate 51, the second cooling plate 52 and the third cooling plate 53 to form a low-temperature area. Next, the cooling water is discharged to the lower cooling rod 127 formed on the lower side of the shell through the other side outlet pipe 5b of the cooling plate portion 5, thereby maximizing the area of ​​the low-temperature area.

[0154] Because one of the first cooling water storage plate 51, the second cooling water storage plate 52 and the third cooling water storage plate 53 is arranged between the box-shaped capture part 4 and on one side of the outer side, the spaces separated between the first cooling water storage plate 51 and the second cooling water storage plate 52 and between the second cooling water storage plate 52 and the third cooling water storage plate 53 are connected by connecting pipes 5c and 5d that penetrate the sides thereof, so that the cooling water circulates in sequence.

[0155] At this time, the connection pipe 5c connecting between the first cooling water storage plate 1 and the second cooling water storage plate 52 is connected so as to be located at the lower part.

[0156] Furthermore, the connection pipe 5d connecting between the second cooling water storage plate 2 and the third cooling water storage plate 53 is connected so as to be located at the upper portion.

[0157] The structure described above is adopted because the inlet pipe 5a connected to the first cooling water storage plate 51 and supplying cooling water has a flow path that flows from the upper part to the upper part of the first cooling water storage plate 51 through the upper cooling rod 126 installed on one side of the outer shell and then flows downward, and the cooling water flowing in through the connecting pipe 5c at the lower part flows to the lower part of the second cooling water storage plate 52 and then flows upward, and the connecting pipe 5d is installed at the upper part and after circulating from the upper part to the lower part of the third cooling water storage plate 53, it is discharged to the lower cooling rod 127 formed on one side of the lower side of the outer shell through the discharge pipe 5b connected to the lower part.

[0158] The reason why cooling water storage tanks such as the first cooling water storage plate 51, the second cooling water storage plate 52 and the third cooling water storage plate 53 are used instead of a simple cooling water supply pipe when the internal temperature of the shell is cooled to a temperature at which an oxidation reaction occurs by supplying cooling water as described above is that by simultaneously conducting heat to the cooling water heat source in the capture box 41 of the box-type capture section 4, a uniform low-temperature area can be simultaneously formed on the multiple capture plates 421 installed inside the capture box 41, thereby capturing the solid high dielectric constant (High K) substance in the exhaust gas in the form of powdered oxide through an oxidation reaction.

[0159] However, if the first cooling water storage plate 51, the second cooling water storage plate 52 and the third cooling water storage plate 53 are constructed with a structure for simply storing cooling water, the cold water will not be able to circulate in a part of the cooling water storage area and will stagnate, thereby forming a temperature difference with the circulating cooling water. In the case as described above, the capture efficiency may be reduced due to the formation of uneven low-temperature areas in the box-type capture section 4. Therefore, the present invention adopts a structure in which stagnation does not occur in all areas and the cooling water that flows in is circulated sequentially.

[0160] To this end, a horizontal baffle 5e is installed in the first cooling water storage plate 51, the second cooling water storage plate 52 and the third cooling water storage plate 53 respectively, which divides the interior into upper and lower layers of a certain length, thereby separating the internal space of each cooling water storage plate into an upper end layer 5g and a lower end layer 5h, thereby separating a flow path that allows the flowing cooling water to flow to the other side end in sequence.

[0161] At this time, in the horizontal baffle 5e, only one side end is in contact with and fixed to the first cooling water storage plate 51, the second cooling water storage plate 52 and the third cooling water storage plate 53, while the other side end is in an unconnected open state, so that the flow path between the upper end layer and the lower end layer is connected at the corresponding position.

[0162] Furthermore, on the upper end layer 5g and the lower end layer 5h divided by the horizontal baffles 5e, a plurality of vertical baffles 5f are arranged and installed at predetermined intervals so as to face the flow of cooling water.

[0163] At this time, the vertical baffles 5f are installed so that one end contacts the horizontal baffle 5e and the other end is open, or so that one end contacts the boundary surface of the cooling water storage plate and the other end is open.

[0164] Thus, as an embodiment, the cooling water flowing into the first cooling water storage plate 51 can form a circulating flow that first flows into the upper end layer 5g of the internal space divided by the horizontal baffle 5e, then flows in a zigzag flow path through multiple vertical baffles 5f installed alternately, and then flows in a zigzag flow path through multiple vertical baffles 5f again, and then flows into the upper end layer after flowing into the lower end layer of the opposite second cooling water storage plate 52 through the connecting pipe 5c, and then flows into the upper end layer through the connecting pipe 5d, and then flows to the lower end layer after flowing into the upper end layer of the opposite third cooling water storage plate 53, and finally is discharged through the discharge pipe 5b.

[0165] In addition, a plurality of low-temperature vortex sheets 5i are respectively formed in the horizontal baffle 5e and the vertical baffle 5f, in which a part of the side surface protrudes toward the outside of the cooling water storage plate at a certain interval. Thus, while fixing the positions of the horizontal baffle 5e and the vertical baffle 5f, vortices are formed and delayed in the flow of the exhaust gas flowing along the outside of the cooling water storage plate, thereby conducting heat to the heat source of the cooling water and increasing the low-temperature area.

[0166] For this purpose, a through hole (not shown) for embedding the low-temperature vortex sheet 5i can be formed at the protruding position of each low-temperature vortex sheet 5i in the cooling water storage plate. In addition, when manufacturing the cooling water storage plate, welding and watertight processing operations need to be performed on the protruding parts of the corresponding low-temperature vortex sheets to prevent cooling water from leaking.

[0167] The second dispersion and capture section 6 can be fastened to the spaced support rods 133 installed near the vertices of the upper surface of the lower plate 13 so as to disperse the exhaust gas passing through the box-type capture section 4 to the side of the lower plate 13 located at the bottom and capture the reaction by-products while being spaced a certain distance from the lower plate.

[0168] Furthermore, the second dispersion capturing section 6 can also support the load of the box-shaped capturing section 4 and the cooling plate section 5 located above in a state where they are spaced at a certain distance.

[0169] Specifically, the second dispersion and capture section 6 is composed of a rectangular plate 61 similar to the internal space of the outer shell 1, and is arranged to form a plurality of rectangular holes 62 for dispersing the exhaust gas. The opening area of ​​the rectangle in the central part is smaller, and the opening area becomes larger as it approaches the peripheral part, so that the main exhaust gas flow of the descending exhaust gas is formed on its outer peripheral surface.

[0170] In addition, the rectangular plate 61 is formed in a manner close to the inner wall of the outer shell 1 and a guide surface 63 without a rectangular hole 62 is formed in the surrounding portion, so that the exhaust gas that flows toward the side of the upper box-type capture portion 4 and then flows along the inner wall of the outer shell flows toward the center along the guide surface 63 and flows downward in the rectangular hole 62.

[0171] In addition, a plurality of vertical plates 64 facing each other in the diagonal direction are formed on both sides of the upper side of the rectangular plate 61 and are welded to the side of the two capture boxes 41 where the vertical plates 412 are not formed, so that the high dielectric constant (High K) substances contained in the exhaust gas that cannot flow to the upper inflow hole of the capture box 41 but flows downward in the side direction grow into powdered oxides through oxidation reaction and capture them while supporting the load. The vertical plates 64 are arranged in a plurality of protruding sideways at a vertical height approximately equal to that of the vertical plates 412 formed on one side and the other side of the capture box.

[0172] In addition, a plurality of support plates 65 are formed at a plurality of positions on the upper side of the rectangular plate 61 , so as to support the load of the first cooling plate 51 , the second cooling plate 52 , and the third cooling plate 53 of the cooling plate portion 5 at a predetermined interval below.

[0173] In addition, guide plates 66 are formed between the plurality of rectangular holes 62 arranged on the lower side of the rectangular plate 61, protruding vertically downward. The plurality of guide plates 66 arranged can prevent the exhaust gas flowing downward through the adjacent rectangular holes 62 from being dispersed to the periphery, but induce it to steadily descend toward the lower plate through the dispersed rectangular holes and capture the reaction byproducts. At this time, since there is no space for the guide plate 66 to protrude on the side where the mesh filter outlet 312 is installed, no guide plate is formed.

[0174] In addition, a portion of the exhaust gas flowing through the outer side of the rectangular plate 61 formed in a manner close to the inner wall of the shell will form a vortex with the help of the inner wall capture plate 111 protruding from the inner wall of the shell and formed in multiple stages, thereby flowing toward the side of the second dispersion capture section 26 or downward to capture the reaction by-products.

[0175] Among the exhaust gas dispersed and descended toward the lower part by means of the second dispersion and capture part 6 of the structure as described above, the exhaust gas descending toward the central part does not directly outflow through the gas exhaust port 131 formed in the central part of the lower plate, but cannot descend because it is blocked by the mesh filter exhaust port 132 that blocks its upper part, so that after being dispersed toward the lateral direction, i.e., the inner wall of the housing, the uncaptured reaction byproducts are finally captured and filtered by the mesh filter formed around the side of the mesh filter exhaust port 132, and finally discharged through the gas exhaust port 131. If the mesh filter exhaust port 132 is not provided and the exhaust gas directly outflows through the gas exhaust port 131, it may be included in the exhaust gas and flow out to the vacuum pump side, causing a malfunction.

[0176] Next, the effects of the present invention constructed as described above will be described.

[0177] In the process of manufacturing semiconductors by using a semiconductor dielectric film process using a high dielectric constant (High K) material with a relatively high dielectric constant in order to achieve miniaturization of semiconductor circuits, when a high dielectric constant (High K) deposition precursor for an oxidation process is supplied into a process chamber and is included in the exhaust gas after the deposition process and flows in through the gas inlet 121 of the shell 1, the heater 21 of the heater section 2 can thermally decompose the high dielectric constant (High K) deposition precursor for an oxidation process contained in the exhaust gas at a predetermined high temperature according to the characteristics of the high dielectric constant (High K) material contained in the precursor, thereby enhancing its chemical reactivity.

[0178] Next, the diffuser 22 installed radially on the upper part of the heater will disperse the heated exhaust gas in the lateral direction while increasing the high temperature contact.

[0179] Next, the flow of the exhaust gas in the state where the solid high dielectric constant (High K) material contained in the precursor is thermally decomposed is dispersed and uniformly supplied to the upper part of the two box-shaped trapping parts 4 with the first dispersion trapping part 3 arranged at the lower part.

[0180] At this time, the first cooling plate 51, the second cooling plate 52 and the third cooling plate 53 of the cooling plate part 5 which form a rectangular surface in the interval space separated from the outer contours of the two box-type capture parts 4 can be used to store the cooling water supplied from the outside and make it flow in sequence, so that through the heat conduction of the cooling water heat source, a low-temperature area suitable for the temperature required for the growth of high dielectric constant (High K) materials into powdered oxides is simultaneously formed in the capture box 41 of the box-type capture part 4, and thereby a uniform low-temperature area is simultaneously formed on the multiple capture plates 421 installed inside the capture box 41.

[0181] When the heat is conducted to the capture box 41 of the box-type capture section in which the low-temperature area is formed as described above and then flows into the interior of the capture box, the heat can flow through the capture plate section 42 composed of multiple sections of multiple capture plates 421 installed inside the capture box while flowing along the flow path in which holes of different sizes and shapes are formed in the capture plates of each section, thereby capturing the solid high dielectric constant (High K) substance contained in the exhaust gas in the form of powdered oxide through an oxidation reaction and accumulating and storing it inside.

[0182] Next, the exhaust gas after the solid high dielectric constant (High K) material is captured in the form of powdered oxide through an oxidation reaction will not be discharged directly to the lower exhaust port, but the exhaust gas passing through the box-type capture section 4 will be dispersed to the side of the lower plate 13 located at the lower part by means of the second dispersion capture section 6 and the reaction by-products will be captured.

[0183] Next, the dispersed exhaust gas will flow sideways through the mesh filter outlet protruding toward the inside of the housing above the lower outlet of the housing, and finally be discharged through the gas outlet 131 while minimizing the outflow of reaction byproducts.

[0184] The present invention is not limited to the specific preferred embodiments described above, and various modifications may be made by persons having general knowledge in the technical field to which the present invention belongs without departing from the gist of the present invention as claimed in the claims, and the changes are included in the scope described in the claims.

Claims

1. A semiconductor engineering reaction byproduct capture device, which induces thermal decomposition in a high temperature region and oxidation reaction in a low temperature region, characterized in that: A capture device for capturing reaction byproducts by heating exhaust gas exhausted from a process chamber at a heater part (2) and simultaneously accommodating the exhaust gas into a housing (1), comprising: A first dispersion and capture section (3) captures reaction byproducts while dispersing exhaust gas containing a high dielectric constant (High K) substance that flows in from a gas inlet (121) of the housing (1) and undergoes thermal decomposition in the heater section (2) toward a lower box-shaped capture section; A box-type capture section (4) is composed of a capture box (41) for accumulating captured powdered oxides while accommodating the inflowing exhaust gas into an internal space forming a low-temperature region and discharging the gas downward, and a capture plate section (42) installed inside the capture box (41) and having a plurality of capture plates (421) installed in multiple stages in a vertically spaced manner for growing a solid high dielectric constant (High K) material into powdered oxides through an oxidation reaction in the low-temperature region; A cooling plate portion (5) for circulating cooling water supplied from the outside and then discharging it in order to maximize the area of ​​the low temperature region in the box-shaped capture portion (4); and The second dispersion and capture section (6) captures the reaction by-products while conveying the exhaust gas after passing through the box-type capture section (4) to the lower section 4.

2. The semiconductor engineering reaction byproduct capture device according to claim 1, characterized in that: The box-shaped capturing parts (4) are arranged with two or more of them spaced apart in the width direction. The cooling plate portion (5) is formed by connecting a first cooling water storage plate (51), a second cooling water storage plate (52) and a third cooling water storage plate (53) to store and supply cooling water in sequence. A cooling water storage plate is respectively arranged between the two box-shaped capture portions (4) and on one side of the outer side.

3. The semiconductor engineering reaction byproduct capture device according to claim 1, characterized in that: The capture box (41) is made of a metal material having a rectangular box structure with a plurality of inflow holes (41a) formed on the upper side and a plurality of exhaust holes (41b) formed on the lower side, so that a uniform low-temperature area is formed by means of a heat source supplied from the cooling plate portion (5). A guide plate (411) is formed at both side ends of the upper surface until the lower side of the first dispersion and capture part (3), thereby guiding the flow of the exhaust gas to the inlet side and capturing the reaction by-products. A plurality of vertical plates (412) are formed on one side surface to protrude in a lateral direction, so as to capture reaction byproducts in the exhaust gas flowing in the lateral direction.

4. The semiconductor engineering reaction byproduct capture device according to claim 1, characterized in that: The capture plate portion (42) is composed of multiple capture plates (421) spaced a certain distance apart from each other on vertical support rods (422) on both sides, and each capture plate (421) is formed in multiple sections in an alternating manner with capture plates (521) having multiple rectangular holes or circular holes, and the closer to the lower capture plate, the smaller the size of the rectangular holes or circular holes and the greater the number of the holes.

5. The semiconductor engineering reaction byproduct capture device according to claim 1 or 2, characterized in that: The cooling plate portion (5) is formed by a first cooling water storage plate (51), a second cooling water storage plate (52) and a third cooling water storage plate (53) connected by connecting pipes, thereby storing and supplying cooling water in sequence. The internal space is divided into an upper end layer (5g) and a lower end layer (5h) at a certain length by means of a horizontal baffle (5e), ​​thereby forming a flow path for cooling water to flow in sequence. In the upper end layer (5g) and the lower end layer (5h), a plurality of vertical baffles (5f) are respectively installed alternately up and down at a certain interval, thereby forming a zigzag flow path for cooling water.

6. The semiconductor engineering reaction byproduct capture device according to claim 5, characterized in that: A plurality of low-temperature vortex sheets (5i) are formed in the horizontal baffle (5e) and the vertical baffle (5f) so that a part of the side surface protrudes to the outside of the cooling water storage plate at a certain interval, thereby increasing the vortex formation and the low-temperature area.

7. The semiconductor engineering reaction byproduct capture device according to claim 1, characterized in that: In the housing (1), a plurality of inner wall capture plates (111) are formed in multiple sections along the inner wall (11) of a rectangular box shape, wherein the inner wall capture plates formed in multiple sections in the lower region protrude with a longer length than the inner wall capture plates in the upper region and are formed with a plurality of holes (111a), thereby capturing while forming a vortex. A mesh filter outlet (132) is installed on one side of the upper portion of a gas outlet (131) formed at a position of a lower plate (13) in the housing (1), so that the exhaust gas flows in through a mesh filter (132a) formed around the exhaust gas and then is discharged to the gas outlet (131).

8. The semiconductor engineering reaction byproduct capture device according to claim 1, characterized in that: The cooling water discharged after being supplied to the cooling plate portion (5) for circulation flows in through the cooling water inlet (124) installed on the upper plate (12) of the outer shell, and then flows into the first cooling water storage plate (51) of the cooling plate portion (5) connected to the upper cooling rod (126) installed on the upper part of the outer surface of the outer shell, and then passes through the second cooling water storage plate (52) and the third cooling water storage plate (53) in sequence for storage and circulation to form a low-temperature area in the box-type capture portion (4), and then flows upward after being discharged through the lower cooling rod (127) formed on the lower part of the outer side surface of the outer shell connected to the third cooling water storage plate (53), and then is supplied to the cooling water flow path (122) formed on the upper plate for circulation, and is discharged through the cooling water discharge port (125) after cooling the upper plate of the outer shell.

9. The semiconductor engineering reaction byproduct capture device according to claim 1, characterized in that: The heater unit (2) comprises: a heater (21) for thermally decomposing a high dielectric constant (High K) deposition precursor for oxidation engineering or an oxide deposition precursor contained in the exhaust gas by using a high temperature to enhance chemical reactivity; and a diffuser (22) for increasing the high temperature contact of the heated exhaust gas while dispersing it in a lateral direction by being radially mounted on the upper portion of the heater; The heater (21) heats the precursor contained in the exhaust gas flowing in to 100°C to 330°C when trimethylaluminum (TMA) is the precursor, heats it to above 300°C when tetrakis(ethylmethylamino)hafnium (TEMAHf), and heats it to above 200°C when cyclopentadienyltris(dimethylamino)zirconium (Cp-Zr) for thermal decomposition.

10. The semiconductor engineering reaction byproduct capture device according to claim 1, characterized in that: The first dispersion and capture section (3) is composed of a rectangular plate (31) suspended on the upper plate of the shell, and a plurality of rectangular holes (32) are arranged in an area corresponding to the box-type capture section (4) located at the lower part, and the remaining area is composed of a guide surface (33) for guiding the flow of the exhaust gas dispersed to the side and flowing along the wall of the shell to the direction of the rectangular holes (32).

11. The semiconductor engineering reaction byproduct capture device according to claim 1, characterized in that: The second dispersion and capture section (6) is composed of a rectangular plate (61) including a region where a plurality of rectangular plates (61) are arranged for guiding the exhaust gas to the lower portion and a guide surface (63) region for guiding the exhaust gas from the periphery to one side of a rectangular hole (62), wherein the opening area of ​​the hole in the central portion of the rectangular hole (62) is smaller, and the opening area increases as it approaches the periphery. The rectangular plate (61) supports the load of the box-shaped capturing part (4) and the cooling plate part (5) at a certain interval by means of spaced support rods (133) installed on the lower plate.

12. The semiconductor engineering reaction byproduct capture device according to claim 11, characterized in that: A plurality of vertical plates (64) facing each other in a diagonal direction are formed on both sides of the upper side of the rectangular plate (61) and are welded to the sides of the two capture boxes (41), thereby capturing the reaction by-products contained in the exhaust gas flowing in the lateral direction. A plurality of support plates (65) are formed at a plurality of positions on one side of the upper side surface, thereby supporting the loads of the first cooling plate (51), the second cooling plate (52) and the third cooling plate (53) of the cooling plate portion (5) at a certain interval below the lower portion thereof.

13. The semiconductor engineering reaction byproduct capture device according to claim 11, characterized in that: Guide plates (66) are formed between the plurality of rectangular holes (62) arranged on the lower side of the rectangular plate (61) and protrude vertically downward, so as to uniformly guide the flow of the descending exhaust gas and capture the reaction by-products.

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