Optical control element

Abstract

The invention relates to an optical control element. This optical control element is provided with: a substrate; an electrode provided on the base material; a liquid crystal layer provided on the electrode; and a high-resistance layer which has a higher resistance than the electrode and is provided between the electrode and the liquid crystal layer, in which the electrode overlaps the high-resistance layer in plan view, and a connection section of the high-resistance layer is in contact with the electrode. The electrodes include at least a first electrode and a second electrode.

Description

[0001] Cross-references to related applications

[0002] This application claims the priority based on Japanese Patent Application No. 2023-103236 filed on June 23, 2023, and cites all the contents described in the Japanese application. Technical Field

[0003] Embodiments of the present invention relate to optical control elements. Background Art

[0004] Liquid crystal elements are being developed that can obtain lens functions by modulating liquid crystals through voltage applied between electrodes. Summary of the invention

[0005] An object of this embodiment is to provide an optical control element with improved quality.

[0006] An optical control element according to one embodiment includes:

[0007] Base material;

[0008] An electrode disposed on the substrate;

[0009] a liquid crystal layer disposed on the aforementioned electrodes; and

[0010] a high resistance layer having a resistance higher than that of the electrode and disposed between the electrode and the liquid crystal layer,

[0011] The electrode overlaps with the high resistance layer in a plan view.

[0012] The connection portion of the high resistance layer is in contact with the electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] [ Figure 1 ] Figure 1 This is a cross-sectional view showing an example of a schematic configuration of an optical control element according to an embodiment.

[0014] [ Figure 2 ] Figure 2 It is a plan view showing an example of a schematic configuration of an optical control element according to an embodiment.

[0015] [ Figure 3 ] Figure 3 It is a plan view showing an example of a schematic configuration of an optical control element according to an embodiment.

[0016] [ Figure 4 ] Figure 4 It is a plan view showing the shape and arrangement of a high-resistance layer when forming a Fresnel lens.

[0017] [ Figure 5 ] Figure 5 is shown with Figure 4 FIG. 1 is a plan view showing the shape and arrangement of electrodes facing the outermost high-resistance layer among the annular high-resistance layers shown.

[0018] [ Figure 6 ] Figure 6 It shows that they are respectively set at Figure 5 A top view showing the shape and arrangement of the connecting portion of the electrodes.

[0019] [ Figure 7 ] Figure 7 yes Figure 6 An enlarged view of the portion surrounded by a dotted line.

[0020] [ Figure 8 ] Figure 8 is shown with Figure 4 FIG. 1 is a plan view showing the shape and arrangement of electrodes facing the innermost high-resistance layer among the annular high-resistance layers shown.

[0021] [ Fig. 9 ] Fig. 9 3 is a cross-sectional view of the optical control element of Comparative Example 1.

[0022] [ Fig.10 ] Fig.10 It is shown Fig. 9 A graph showing the relationship between the distance between electrodes and the voltage in the optical control element shown.

[0023] [ Fig.11 ] Fig.11 It is a cross-sectional view of the optical control element of Comparative Example 2.

[0024] [ Fig.12 ] Fig.12 It is shown Fig.11 A graph showing the relationship between the distance between electrodes and the voltage in the optical control element shown.

[0025] [ Fig.13 ] Fig.13 This is a diagram showing the relationship between the distance between electrodes and the voltage in the optical control element according to the embodiment.

[0026] [ Fig.14 ] Fig.14 It is a diagram showing voltage distributions in Comparative Example 1, Comparative Example 2, and the embodiment when the resistance of the high-resistance layer is the same.

[0027] [ Fig.15 ] Fig.15 It is a diagram showing the voltage distribution in Comparative Example 2 and the embodiment when the resistance of the high resistance layer is the same. DETAILED DESCRIPTION

[0028] Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings. It should be noted that the disclosed text is only an example, and appropriate changes that can be easily thought of by those skilled in the art that include the main idea of ​​the invention are of course included in the scope of the present invention. In addition, in order to make the description clearer, the width, thickness, shape, etc. of each part are sometimes schematically shown in the accompanying drawings compared to the actual method, but this is only an example and does not limit the interpretation of the present invention. In addition, in this specification and the accompanying drawings, with respect to the figures that have already appeared, the same figure marks are sometimes marked on the elements that are the same as the aforementioned elements, and the detailed description is appropriately omitted.

[0029] The embodiments described in this specification are not general, but are embodiments for describing the same or corresponding specific technical features of the present invention. Hereinafter, an optical control element according to one embodiment will be described in detail with reference to the accompanying drawings.

[0030] In the present embodiment, the first direction X, the second direction Y, and the third direction Z are orthogonal to each other, but may intersect at angles other than 90 degrees. The direction of the tip of the arrow pointing to the third direction Z is defined as up or above, and the direction opposite to the direction of the tip of the arrow pointing to the third direction Z is defined as down or below. It should be noted that the first direction X, the second direction Y, and the third direction Z are sometimes referred to as the X direction, the Y direction, and the Z direction, respectively.

[0031] In addition, in the case of "the second member above the first member" and "the second member below the first member", the second member may be in contact with the first member, or may be located away from the first member. In the latter case, a third member may be interposed between the first member and the second member. On the other hand, in the case of "the second member above the first member" and "the second member below the first member", the second member is in contact with the first member.

[0032] In addition, an observation position for observing the optical control element is set at the front end side of the arrow in the third direction Z, and observation from the observation position toward the XY plane defined by the first direction X and the second direction Y is referred to as top view. Observation of a cross section of the optical control element in the XZ plane defined by the first direction X and the third direction Z, or in the YZ plane defined by the second direction Y and the third direction Z is referred to as cross-sectional observation.

[0033] [Implementation Method]

[0034] Figure 1 1 is a cross-sectional view showing an example of a schematic configuration of an optical control element according to an embodiment. The optical control element LNS according to the embodiment has a plurality of lens forming regions LFR. Figure 1In the example shown, the cross-sectional shape of one lens forming region LFR is shown.

[0035] The lens forming region LFR includes a substrate SUB1, a substrate SUB2, and a liquid crystal layer LCY. The substrate SUB1 includes a base material BA1, an electrode LEa, an electrode LEb, an insulating layer INS, a high resistance layer HRS, and an alignment film AL1. The substrate SUB2 includes a base material BA2, an electrode UE, and an alignment film AL2. The liquid crystal layer LCY is provided between the substrate SUB1 and the substrate SUB2.

[0036] When the electrode LEa and the electrode LEb are not distinguished, they are simply referred to as the electrode LE. The electrode LE has a connection portion CNT connected to the high resistance layer HRS via a contact hole in the insulating layer INS, and the details will be described later. In order to make the description easy to understand, Figure 1 In the embodiment, on the substrate BA1, only one of the connection parts CNT of each of the electrode LEa and the electrode LEb is in contact with the high resistance layer HRS. However, the number of the connection parts CNT in contact with the high resistance layer HRS is not limited thereto. In addition, the number of electrodes LE is not limited to two, and three or more may be provided. In addition, the number of the high resistance layer HRS may be one or more.

[0037] In the substrate SUB1, the electrode LEa and the electrode LEb are provided on the base material BA1. The insulating layer INS covers the base material BA1, and the electrode LEa and the electrode LEb. The high resistance layer HRS is provided on the insulating layer INS. That is, the insulating layer INS is provided between the electrode LEa and the electrode LEb and the high resistance layer HRS. The alignment film AL1 is provided on the high resistance layer HRS. The connection part CNT of the high resistance layer HRS is connected to the electrode LEa and the electrode LEb respectively via the contact hole provided in the insulating layer INS.

[0038] In the substrate SUB2, an electrode UE is provided in contact with the base material BA2. An alignment film AL2 is provided in contact with the electrode UE. The liquid crystal layer LCY is arranged between the alignment film AL1 of the substrate SUB1 and the alignment film AL2 of the substrate SUB2. That is, the alignment film AL1 and the alignment film AL2 are respectively in contact with the liquid crystal layer LCY.

[0039] The electrode LEa and the electrode LEb may be formed of a transparent conductive layer, such as indium tin oxide (ITO). The high resistance layer HRS may be a conductive layer having a higher resistance than the electrode LEa and the electrode LEb, such as indium gallium zinc oxide (IGZO). The insulating layer INS is an insulating layer containing silicon, such as a silicon oxide layer or a silicon nitride layer.

[0040] Figure 1The optical control element LNS shown modulates the liquid crystal layer LCY by applying a voltage between the electrodes LEa and LEb and the electrode UE, thereby forming a lens. That is, the optical control element LNS is a liquid crystal lens. In the embodiment, the electrodes LEa, LEb, UE and the liquid crystal layer LCY are referred to as a lens forming region LFR. Figure 1 Only one lens forming region LFR is shown in FIG. 1 , but the optical control element LNS includes a plurality of lens forming regions LFR. By combining the liquid crystal lens with a display panel, such as a liquid crystal display panel, a display device capable of adjusting light emitted from pixels of the display panel can be realized.

[0041] Figure 2 It is a plan view showing an example of a schematic configuration of an optical control element according to an embodiment. Figure 2 The optical control element LNS shown in the figure includes a circular electrode LEa and a ring-shaped electrode LEb. The electrode LEa is arranged inside the electrode LEb.

[0042] A wiring WL1 is provided overlapping with the circular electrode LEa. The wiring WL1 is connected to the electrode LEa via the contact hole CH1. A wiring WL2 is provided overlapping with the ring-shaped electrode LEb. The wiring WL2 is connected to the electrode LEb via the contact hole CH2a and the contact hole CH2b. The electrode pair LX is formed by the combination of the electrode LEa and the electrode LEb. The area occupied by the electrode pair LX in a plan view is equal to the area occupied by one lens forming region LFR. However, as described above, the number of electrodes LE (including the electrode LEa and the electrode LEb) is not limited to 2.

[0043] Although not shown, the wiring WL1 is provided between the substrate BA1 and the electrode LEa. The wiring WL2 is provided between the substrate BA1 and the electrode LEb. An insulating layer may be provided between the wiring WL1 and the electrode LEa, and between the wiring WL2 and the electrode LEb. The wiring WL (wiring WL1 and wiring WL2) and the electrode LE (electrode LEa and electrode LEb) are connected via the contact hole CH1, the contact hole CH2a, and the contact hole CH2b provided in the insulating layer.

[0044] Figure 3 1 is a plan view showing an example of a schematic configuration of an optical control element according to an embodiment. Figure 3 The cross-sectional view of line A1-A2 is Figure 1 .like Figure 3 As shown, a ring-shaped electrode LEb is provided outside a circular electrode LEa. Figure 3 In FIG. 1 , the region with diagonal lines is the connection portion CNT of the high resistance layer HRS. The connection portion CNT is formed in a ring shape.

[0045] Figure 4 1 is a plan view showing the shape and arrangement of the high resistance layer when forming a Fresnel lens. The high resistance layer HRS includes a plurality of high resistance layers. Figure 4 In the embodiment, the high resistance layer HRS includes five high resistance layers HRS1, HRS2, HRS3, HRS4, and HRS5. However, the number of high resistance layers HRS is not limited thereto, and any number of high resistance layers may be provided.

[0046] The high resistance layer HRS1 has a circular shape. The high resistance layers HRS2, HRS3, HRS4, and HRS5 are arranged concentrically at equal intervals with the circular high resistance layer HRS1 as the center.

[0047] The distance between the high resistance layer HRS1 and the high resistance layer HRS2, the distance between the high resistance layer HRS2 and the high resistance layer HRS3, the distance between the high resistance layer HRS3 and the high resistance layer HRS4, and the distance between the high resistance layer HRS4 and the high resistance layer HRS5 are preferably as short as possible. The distance is, for example, about 2 μm. The width of each of the high resistance layer HRS2, the high resistance layer HRS3, the high resistance layer HRS4, and the high resistance layer HRS5 is as long as the width corresponding to the phase change that the lens can constitute. In addition, the number of the annular high resistance layer is arbitrary, as long as it is designed according to the optical power (lens power) and the phase change amount of each annular high resistance layer.

[0048] Figure 5 is shown with Figure 4 A top view of the shape and arrangement of the electrodes facing the outermost high resistance layer among the annular high resistance layers shown. Figure 5 In the figure, it is shown that Figure 4 The high resistance layer HRS5 among the high resistance layers HRS1 to HRS5 shown is opposed to the electrode LE in the third direction Z.

[0049] However, in Figure 5 In FIG. 1 , only the electrode LE is shown, and the high resistance layer HRS5 is not shown. Figure 5 In the embodiment, the area occupied by the electrodes LE51, LE52, and LE53 is the same as that of the high resistor HRS5. That is, the electrodes LE51, LE52, and LE53 overlap with the high resistor HRS5 in a plan view.

[0050] Ring-shaped electrodes LE51, LE52, and LE53 are provided facing the high resistance layer HRS5 (not shown). The number of electrodes is not limited thereto, and two or less electrodes LE or four or more electrodes LE may be provided facing the high resistance layer HRS5.

[0051] The distance between the electrode LE51 and the electrode LE52 and the distance between the electrode LE52 and the electrode LE53 are preferably as short as possible. The distances may not be consistent with the distances between the plurality of high resistance layers HRS.

[0052] exist Figure 5 The electrode LE opposite to the high resistance layer HRS5 is described in the above, but it is not limited to the high resistance layer HRS5. It is sufficient to set a plurality of annular electrodes LE opposite to the other annular high resistance layers HRS2, HRS3 and HRS4. The electrode LE opposite to the circular high resistance layer HRS1 will be described in detail below.

[0053] Figure 6 It shows that they are respectively set at Figure 5 A top view showing the shape and arrangement of the connecting portion of the electrodes. Figure 7 yes Figure 6 An enlarged view of the portion surrounded by a dotted line.

[0054] like Figure 6 and Figure 7 As shown, the connection part CNT (the area with oblique lines) of the high resistance layer HRS5 is respectively provided on the electrode LE51, the electrode LE52 and the electrode LE53. The connection parts CNT corresponding to the electrode LE51, the electrode LE52 and the electrode LE53 are respectively set as the connection parts CNT51, the connection parts CNT52 and the connection parts CNT53. The connection parts CNT (the connection parts CNT51, the connection parts CNT52 and the connection parts CNT53) are formed into a circular ring shape. The width of each of the connection parts CNT51, the connection parts CNT52 and the connection parts CNT53 is smaller than the width of the electrode LE (each of the electrode LE51, the electrode LE52 and the electrode LE53) provided.

[0055] The width of each of the electrode LE51 , the electrode LE52 , and the electrode LE53 can be appropriately adjusted to a width optimal for forming a phase difference distribution.

[0056] With 1 high resistance layer HRS ( Figure 4 The high resistance layer HRS1, the high resistance layer HRS2, the high resistance layer HRS3, the high resistance layer HRS4 and the high resistance layer HRS5 are each provided with two or more electrodes LE ( Figure 5 In the figure, there are electrodes LE51, LE52 and LE53 opposite to the high resistance layer HRS5, but more electrodes can be set.

[0057] The innermost electrode LE is connected to the high resistance layer HRS at the innermost side, and the outermost electrode LE is connected to the high resistance layer HRS at the outermost side. The connection positions of the other electrodes LE and the high resistance layer HRS can be set appropriately and arbitrarily.

[0058] For example, the connection portion CNT51 connected to the electrode LE51 among the electrodes LE51, LE52, and LE53 is closer to the center of the lens forming region LFR, in other words, is arranged further inside. The connection portion CNT53 connected to the electrode LE53 among the electrodes LE51, LE52, and LE53 is away from the center of the lens forming region LFR, in other words, is arranged further outside. That is, the connection portion CNT51 connected to the electrode LE51 is arranged further inside the region occupied by the electrode LE51, and the connection portion CNT53 connected to the electrode LE53 is arranged further outside the region occupied by the electrode LE53.

[0059] Figure 8 is shown with Figure 4 FIG. 1 is a plan view showing the shape and arrangement of electrodes facing the innermost high-resistance layer among the annular high-resistance layers shown. Figure 8 It is shown in Figure 4 The high resistance layer HRS1 among the high resistance layers HRS1 to HRS5 shown in the figure faces the electrode LE in the third direction Z.

[0060] but, Figure 8 Only the electrode LE is shown, and the high resistance layer HRS1 is not shown. Figure 8 In FIG. 1 , the area occupied by the electrodes LE11 , LE12 , and LE13 is the same as that of the high resistor HRS1 . That is, the electrodes LE11 , LE12 , and LE13 overlap with the high resistor HRS1 in a plan view.

[0061] Circular electrode LE11, annular electrode LE12, and annular electrode LE13 are provided opposite to high resistance layer HRS1 (not shown). The number of electrodes is not limited thereto, and two or less electrodes LE or four or more electrodes LE may be provided opposite to high resistance layer HRS1.

[0062] The distance between the electrode LE11 and the electrode LE12 and the distance between the electrode LE12 and the electrode LE13 are preferably as short as possible. The distances may not be consistent with the distances between the plurality of high resistance layers HRS.

[0063] like Figure 8As shown, the connection portion CNT11 (the area with oblique lines) connected to the electrode LE11 and provided with the high resistance layer HRS1, and the connection portion CNT12 and the connection portion CNT13 (the area with oblique lines) connected to the electrode LE12 and the electrode LE13 respectively and provided with the high resistance layer HRS1. The connection portion CNT11 connected to the electrode LE11 is formed into a circular shape, and the connection portion CNT12 and the connection portion CNT13 connected to the electrode LE12 and the electrode LE13 respectively are formed into an annular shape. The diameter of the circular connection portion CNT11 connected to the electrode LE11 is smaller than the diameter of the electrode LE11. The widths of the annular connection portions CNT12 and the connection portions CNT13 connected to the electrode LE12 and the electrode LE13 are each smaller than the width of the electrode LE provided.

[0064] The width of each of the electrode LE11 , the electrode LE12 , and the electrode LE13 can be appropriately adjusted to a width optimal for forming a phase difference distribution.

[0065] Figure 8 In the embodiment, two or more electrodes LE (electrode LE11 , electrode LE12 , and electrode LE13 ) are provided to face one high resistance layer HRS1 (not shown), but more electrodes may be provided.

[0066] Figure 8 In the embodiment, the innermost electrode LE is connected to the high resistance layer HRS at the innermost side, and the outermost electrode LE is connected to the high resistance layer HRS at the outermost side. The connection positions of the other electrodes LE and the high resistance layer HRS can be set appropriately and arbitrarily.

[0067] For example, the connection portion CNT11 connected to the electrode LE11 among the electrodes LE11, LE12, and LE13 is closer to the center of the lens forming region LFR, in other words, is arranged further inside. The connection portion CNT13 connected to the electrode LE13 among the electrodes LE11, LE12, and LE13 is away from the center of the lens forming region LFR, in other words, is arranged further outside. That is, the connection portion CNT11 connected to the electrode LE11 is arranged further inside (center) of the region occupied by the electrode LE11, and the connection portion CNT13 connected to the electrode LE13 is arranged further outside the region occupied by the electrode LE13.

[0068] Here, as Comparative Example 1, it is considered that the electrode LEa and the electrode LEb are in contact with the high resistance layer HRS, but are almost not overlapped with the high resistance layer HRS in a plan view. In addition, as Comparative Example 2, it is considered that in Comparative Example 2, the electrode LEa and the electrode LEb overlap with the high resistance layer HRS in a plan view, but are not in contact with the high resistance layer HRS.

[0069] Fig. 93 is a cross-sectional view of the optical control element of Comparative Example 1. Fig. 9 In the optical control element LNSr shown, the area where the electrodes LEa and LEb overlap with the high resistance layer HRS is extremely small. Since the area occupied by the electrodes LEa and LEb is small when viewed from above, it can be considered that Fig. 9 The electrode LEa and the electrode LEb shown in the figure hardly overlap with the high resistance layer HRS.

[0070] Fig.10 It is shown Fig. 9 The relationship between the distance between electrodes and the voltage in the optical control element shown in FIG. Fig.10 In FIG. 1 , the horizontal axis represents the distance PST from the electrode LEa to the electrode LEb, with the position of the electrode LEb being 0. The vertical axis represents the voltage V to be applied.

[0071] Fig.10 In the figure, the high resistance layer HRS with changed resistance is plotted. The resistance of the high resistance layer HRS is 1.00E+02 (1.00×10 2 )[Ω*cm]、1.00E+01(1.00×10 1 )[Ω*cm], 1.00E+00(1.00)[Ω*cm], 1.00E-01(1.00×10 -1 )[Ω*cm].

[0072] like Fig.10 As shown, even if the resistance of the high resistance layer HRS is changed, the relationship between the distance PST between the electrodes LEa and LEb and the voltage V does not change. The voltage V has a linear distribution with respect to the distance PST between the electrodes LEa and LEb.

[0073] Fig.11 It is a cross-sectional view of the optical control element of Comparative Example 2. Fig.11 In the optical control element LNSr shown, as described above, the electrode LEa and the electrode LEb are not in contact with the high resistance layer HRS and are separated.

[0074] Fig.12 It is shown Fig.11 A graph showing the relationship between the distance between electrodes and the voltage in the optical control element shown. Fig.12 In FIG. 1 , the horizontal axis represents the distance PST from the end of the electrode LEa to the end of the electrode LEb, with the position of the end of the electrode LEb being 0. The vertical axis represents the voltage V to be applied.

[0075] Fig.12 In the figure, the high resistance layer HRS with changed resistance is plotted. The resistance of the high resistance layer HRS is 1.0E+03 (1.0×10 3 )[Ω*cm]、2.0E+02(2.0×102 )[Ω*cm] , 1.0E+02(1.0×10 2 )[Ω*cm] 、5.0E+01(5.0×10 1 )[Ω*cm] , 2.0E+01(2.0×10 1 )[Ω*cm] , 1.0E+01(1.0×10 1 )[Ω*cm].

[0076] like Fig.12 As shown in FIG. 1 , the voltage V is nonlinearly distributed with respect to the distance PST between the electrode LEa and the electrode LEb. If the resistance of the high resistance layer HRS is changed, the voltage distribution will also change.

[0077] In Comparative Example 1, the voltage V is linearly distributed with respect to the distance PST. Even if the resistance of the high resistance layer HRS is changed, the linear distribution of the voltage V does not change (see Fig. 9 and Fig.10 ), so when the desired linear distribution of voltage cannot be obtained, multiple high-resistance layers are required.

[0078] In Comparative Example 2, the voltage V is distributed nonlinearly with respect to the distance PST. Due to the change in the resistance of the high resistance layer HRS, the distribution of the voltage V changes extremely (see Fig.11 and Fig.12 ), so there is a risk of narrow process margin.

[0079] Fig.13 This is a diagram showing the relationship between the distance between electrodes and the voltage in the optical control element according to the embodiment. Fig.13 In the figure, the horizontal axis is 0 for the position of the connection portion CNT of the electrode LEb and 0 for the distance PST to the connection portion CNT of the electrode LEa (see also Figure 1 ). The vertical axis represents the applied voltage V.

[0080] Fig.13 The resistance of the high resistance layer HRS is 5.0E+01 (5.0×10 1 )[Ω*cm]、1.0E+02(1.0×10 2 )[Ω*cm]. In addition, 0 V, 15 V, and 0 V were applied to the electrode LEb, the electrode LEa, and the electrode UE, respectively.

[0081] like Fig.13 As shown, even if the resistance of the high resistance layer HRS is different, the distribution of the voltage V increases with the increase of the distance PST. Therefore, even if the resistance of the high resistance layer HRS varies due to manufacturing variations, the voltage distribution with the same trend can be obtained.

[0082] Fig.14 It is a diagram showing voltage distributions in Comparative Example 1, Comparative Example 2, and the embodiment when the resistance of the high-resistance layer is the same. Fig.14 The resistance of the high resistance layer HRS is 1.0E+02 (1.0×10 2 )[Ω*cm]. The cross sections of the optical control elements of Comparative Example 1, Comparative Example 2 and the embodiment are respectively as shown in FIG. Fig. 9 , Fig.11 and Figure 1 shown.

[0083] like Fig.14 As shown, in the optical control element LNS of the embodiment, the distribution of the voltage V with respect to the distance PST is nonlinear like Comparative Example 2. On the other hand, the distribution of the voltage V in Comparative Example 1 is linear, which is different from the voltage distribution of the embodiment.

[0084] Fig.15 It is a diagram showing the voltage distribution in Comparative Example 2 and the embodiment when the resistance of the high resistance layer is the same. Fig.15 The resistance of the high resistance layer HRS is 5.0E+01 (5.0×10 1 )[Ω*cm], Fig.14 The cross sections of the optical control element of Comparative Example 2 and the embodiment are as follows: Fig.11 and Figure 1 shown.

[0085] like Fig.15 As shown in FIG. 1 , when the distance PST decreases, the voltage V with respect to the distance PST in Comparative Example 2 takes a constant value. If the resistance of the high resistance layer HRS decreases, there is a risk that the voltage V does not change when the distance PST is small.

[0086] On the other hand, in the optical control element LNS of the embodiment, even when the resistance of the high resistance layer HRS decreases and the distance PST is short, the voltage V changes with respect to the distance PST.

[0087] In the optical control element LNS of the embodiment, the voltage V with respect to the distance PST between the electrode LEb and the electrode LEa is nonlinearly distributed. In addition, even if the resistance of the high resistance layer HRS changes, the voltage V exhibits the same behavior. Thus, a liquid crystal lens with improved quality can be obtained.

[0088] As described above, the optical control element LNS of the embodiment is a liquid crystal lens. By combining the liquid crystal lens with a display panel, for example, a liquid crystal display panel, a display device capable of adjusting light emitted from pixels of the display panel can be realized.

[0089] The optical control element LNS of the embodiment can adjust the angle of light incident on the optical control element LNS and emit it. Therefore, the optical control element LNS can also function as a viewing angle control element or a diffraction grating.

[0090] Several embodiments of the present invention are described above. These embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in many other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and their variations are included in the scope and spirit of the invention, and are included in the invention described in the claims and the scope of their equivalents.

Claims

1. An optical control element, comprising: Base material; An electrode disposed on the substrate; a liquid crystal layer disposed on the electrodes; and a high resistance layer having a resistance higher than that of the electrode and disposed between the electrode and the liquid crystal layer, wherein the electrode overlaps with the high resistance layer when viewed from above, The connection portion of the high resistance layer is in contact with the electrode.

2. The optical control element according to claim 1, wherein: The electrodes include at least a first electrode and a second electrode. The second electrode has a ring shape, The first electrode has a circular shape and is disposed inside the second electrode.

3. The optical control element according to claim 1, further comprising an insulating layer provided between the electrode and the high resistance layer. The connection portion of the high resistance layer is in contact with the electrode via a contact hole provided in the insulating layer.

4. The optical control element according to claim 1, wherein: The electrodes include at least a first electrode and a second electrode. The optical control element is a liquid crystal lens that modulates the liquid crystal layer based on distribution of voltages applied to the first electrode and the second electrode.

5. The optical control element according to claim 1, wherein: The high resistance layer has a plurality of high resistance layers, The electrode includes a plurality of electrodes facing each of the plurality of high resistance layers.

6. The optical control element according to claim 1, comprising: a first substrate comprising the base material, the electrode, the high resistance layer and a first orientation film; a second substrate including a third electrode and a second alignment film; and The liquid crystal layer is sandwiched between the first substrate and the second substrate.

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