Temperature sensor, substrate processing apparatus, method of manufacturing semiconductor device, and temperature control system

Abstract

The invention provides a temperature sensor, a substrate processing apparatus, a method of manufacturing a semiconductor device, and a temperature control system. The temperature sensor can be arranged in a processing space for processing a substrate without affecting various processing of the substrate. The substrate processing apparatus includes: a temperature measuring portion disposed in a processing space formed between substrates supported by a support portion of a substrate support; a detection unit in which the temperature measurement unit is disposed; and a column section extending in the vertical direction so as to support the detection section in the horizontal direction, the lower end of the detection section being disposed at the same height position as or higher than the lower end of the support section, and the column section being disposed at a position higher than the lower end of the support section in the horizontal direction relative to the surface on the processing space side of a pillar section that supports the support section in the horizontal direction. The processing space-side surface of the column portion is disposed so as to be separated from the processing space.

Description

Technical Field

[0001] The present disclosure relates to a temperature sensor, a substrate processing device, a method for manufacturing a semiconductor device, and a temperature control system. Background Art

[0002] As one of the steps in the manufacturing process of semiconductor devices, a predetermined process is sometimes performed on a wafer (hereinafter also referred to as a substrate) (see, for example, Patent Documents 1 and 2). These documents describe a technique for controlling the temperature of a processing chamber using a temperature detected by a temperature sensor that moves together with a wafer box (hereinafter also referred to as a substrate support). However, if the temperature sensor is to be arranged in the processing space, various processes on the substrate may be hindered.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2020 / 059722 Pamphlet

[0006] Patent Document 2: International Publication No. 2023 / 053172 Pamphlet Summary of the invention

[0007] Problems to be solved by the invention

[0008] The present disclosure provides a technology capable of disposing a temperature sensor in a processing space where a substrate is processed without affecting various processes of the substrate.

[0009] Means for solving problems

[0010] According to one embodiment of the present disclosure, the following technology is provided, comprising: a temperature measuring portion arranged in a processing space, the processing space being formed between substrates supported on a supporting portion of a substrate supporting member; a detection portion of the temperature measuring portion being arranged inside; and a column portion extending in a vertical direction in a manner of supporting the detection portion in a horizontal direction, the lower end of the detection portion being arranged at the same height position as or higher than the lower end of the supporting portion, and the surface of the column portion on the processing space side being arranged away from the processing space relative to a surface of a pillar portion on the processing space side supporting the supporting portion in the horizontal direction.

[0011] Effects of the Invention

[0012] According to the present disclosure, a temperature sensor can be arranged in a processing space where a substrate is processed without affecting various processes of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic longitudinal sectional view showing a substrate processing apparatus according to an embodiment of the present disclosure.

[0014] Figure 2 It is a schematic diagram for explaining the first temperature sensor to the third temperature sensor according to one embodiment of the present disclosure.

[0015] Figure 3 (A) is a side view for explaining the positional relationship between the first temperature sensor and the substrate support according to one embodiment of the present disclosure. Figure 3 (B) is a plan view for explaining the positional relationship between the first temperature sensor and the substrate support according to one embodiment of the present disclosure.

[0016] Figure 4 This is a perspective view showing a state where a first temperature sensor according to one embodiment of the present disclosure is attached to a substrate support.

[0017] Figure 5 (A) is a perspective view showing an upper end connecting portion attached to an upper end of a first temperature sensor according to an embodiment of the present disclosure. Figure 5 (B) is Figure 5 (A) is a side view of the upper end connection portion shown.

[0018] Figure 6 This is a schematic longitudinal sectional view showing the periphery of a rotating mechanism in a substrate processing apparatus according to an embodiment of the present disclosure.

[0019] Figure 7 The following shows the hardware configuration of a controller in a substrate processing apparatus according to an embodiment of the present disclosure.

[0020] Figure 8 The hardware configuration of a temperature controller in a substrate processing apparatus according to an embodiment of the present disclosure is shown.

[0021] Fig. 9 (A) is used to illustrate a substrate processing sequence performed by a substrate processing apparatus according to an embodiment of the present disclosure. Fig. 9 (B) indicates Fig. 9 (A) Temperature changes in each step of the substrate processing sequence. DETAILED DESCRIPTION

[0022] The following mainly refers to Figures 1 to 9One mode of the present disclosure is described. In addition, the drawings used in the following description are all schematic drawings, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. may not be consistent with reality. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. may not be consistent between multiple drawings. In addition, among multiple drawings, substantially the same elements are marked with the same figure numbers, and the elements are described in the drawings where they first appear, and the descriptions are omitted in subsequent drawings unless otherwise required. Unless otherwise specified in the specification, the elements are not limited to one, and multiple elements may exist.

[0023] (1) Structure of substrate processing apparatus

[0024] use Figure 1 The structure of the substrate processing apparatus 10 will be described.

[0025] like Figure 1 As shown, the substrate processing apparatus 10 includes a supported vertical reaction tube (processing tube) 11, and the reaction tube 11 is composed of an outer tube 12 and an inner tube 13 arranged in concentric circles. The outer tube 12 is made of quartz (SiO 2 ) is integrally formed into a cylindrical shape with a closed upper end and an open lower end. The inner tube 13 is formed into a cylindrical shape with upper and lower ends open. The hollow portion of the inner tube 13 forms a processing chamber 14 for conveying a wafer box 31 as a substrate support (also called a substrate holder or holder), and the lower end side (open space) of the inner tube 13 forms a furnace opening 15 for taking out and putting in the wafer box 31.

[0026] The lower end between the outer tube 12 and the inner tube 13 is sealed airtight by a manifold 16 as a furnace flange constructed in a substantially cylindrical shape. The manifold 16 is detachably mounted on the outer tube 12 and the inner tube 13 for replacement.

[0027] The exhaust passage 17 is formed into a circular ring shape with a certain width through the gap between the outer tube 12 and the inner tube 13. Figure 1 As shown in FIG. 1 , one end of the exhaust pipe 18 is connected to the upper portion of the side wall of the manifold 16, and the exhaust pipe 18 is in a state of being communicated with the lowermost end of the exhaust passage 17. An exhaust device 19 controlled by a pressure controller 21 is connected to the other end of the exhaust pipe 18, and a pressure sensor 20 is connected in the middle of the exhaust pipe 18. The pressure controller 21 is configured to perform feedback control on the exhaust device 19 based on the measurement result from the pressure sensor 20.

[0028] The cover body (sealing cover) 25 that closes the lower end opening contacts the manifold 16 from the lower side in the vertical direction. The cover body 25 is constructed in a disk shape having an outer diameter substantially equal to that of the manifold 16, and is constructed to be lifted and lowered in the vertical direction by a lifting mechanism (wafer box elevator) 26 protected by a wafer box cover 37 provided in the transfer chamber (transport chamber) 3 of the housing 2. Thus, the wafer box 31 can move between the processing chamber 14 and the transfer chamber 3 provided below and adjacent to the processing chamber 14. The lifting mechanism 26 is composed of a feed screw shaft device driven by a motor and a bellows, etc., and the motor 27 of the lifting mechanism 26 is controlled by a drive controller 28. A rotating shaft 30 is arranged on the center line of the cover body 25 and supported in a freely rotatable manner. The rotating shaft 30 is configured to be driven to rotate by a motor 29 controlled by a drive controller 28. The wafer box 31 is vertically supported at the upper end of the rotating shaft 30. In this embodiment, a rotating mechanism 301 is formed by the rotating shaft 30 and the motor 29. That is, the rotating mechanism 301 is configured to rotate the wafer cassette 31 .

[0029] A gas introduction pipe 22 is provided on the cover 25 located below the manifold 16 so as to communicate with the furnace opening 15 of the inner tube 13. A raw gas supply device, a reaction gas supply device, and an inert gas supply device (hereinafter collectively referred to as a gas supply device 23) are connected to the gas introduction pipe 22. The gas supply device 23 is configured to be controlled by a gas flow controller 24. The gas introduced from the gas introduction pipe 22 into the furnace opening 15 flows in the processing chamber 14 of the inner tube 13, and is discharged from the exhaust pipe 18 through the exhaust passage 17.

[0030] The wafer box 31 includes a pair of upper and lower end plates 32 and 33 and a support (column) 34 as three support parts vertically erected therebetween. Support parts 35 for supporting substrates 1 as a plurality of holding grooves are provided at equal intervals along the length direction on the three support columns 34. The support parts 35 provided on the same layer of the three support columns 34 are opened to face each other. The wafer box 31 inserts the substrate 1 between the support parts 35 on the same layer of the three support columns 34, thereby arranging and holding a plurality of substrates 1 in a horizontal and mutually centered state. In addition, by inserting the heat insulation board 120 between the support parts 35 on the same layer of the three support columns 34, the plurality of heat insulation boards 120 are arranged and held in a horizontal and mutually centered state.

[0031] That is, the wafer box 31 is configured to separate a substrate processing area between the end plate 32 and the end plate 38 for holding a plurality of substrates 1 and a heat insulation board area between the end plate 38 and the end plate 33 for holding a plurality of heat insulation boards 120, and the heat insulation board area is arranged below the substrate processing area. The heat insulation board 120 held between the end plate 38 and the end plate 33 constitutes the heat insulation part 36.

[0032] The rotating shaft 30 is configured to support the wafer box 31 in a state where the wafer box 31 is lifted from the upper surface of the cover 25. The heat insulating portion 36 is provided at the furnace opening portion 15 and is configured to heat insulate the furnace opening portion 15. In addition, a motor 29 for rotating the wafer box 31 is provided below the cover 25. The motor 29 has a hollow motor structure, and the rotating shaft 30 passes through the motor 29.

[0033] Outside the reaction tube 11 , heater units 40 as heating means are arranged on a concentric circle and are provided in a state of being supported by the housing 2 .

[0034] like Figure 2 As shown, the heater unit 40 is configured so as to be controllably divided into a plurality of regions in the longitudinal direction, with a heater being provided in each region, and a plurality of heaters being stacked. That is, the heater unit 40 has a plurality of heating regions for heating the substrate 1. The heater unit 40 is, for example, divided into five regions, U, CU, C, CL, and L, in order from the top. Furthermore, a substrate thermocouple 211 as a first temperature sensor, an internal thermocouple 66 as a second temperature sensor, and a heater thermocouple 65 as a third temperature sensor are provided in each region. Figure 2 In the figure, the processing substrate is marked as "1" and is omitted from the illustration.

[0035] The heater thermocouple 65 is provided near the heater unit 40 and is configured to measure the temperature of the heater for each region. The temperature controller 64 is configured to perform feedback control on the heater unit 40 based on the measurement result from the heater thermocouple 65. Thus, the heater unit 40 is configured to heat the substrate 1 held in the substrate processing region of the wafer cassette 31.

[0036] The internal thermocouple 66 is disposed between the inner tube 13 and the outer tube 12 inside the outer tube 12, and is configured to measure the temperature between the inner tube 13 and the outer tube 12. The internal thermocouple 66 is configured such that a number of thermocouples corresponding to the number of zones are housed in one protective tube, and a temperature measuring portion for measuring the temperature is disposed at a position opposite to the zone. Similar to the heater thermocouple 65, the temperature controller 64 is configured to feedback control the heater unit 40 based on the measurement result from the internal thermocouple 66.

[0037] The substrate thermocouple 211 is mounted on the wafer box 31 and is configured to be disposed near the substrate 1 to measure the temperature of the substrate 1. The substrate thermocouple 211 is configured to include a temperature measuring portion 211b for measuring the temperature of the substrate 1 and a cable 211c including a wire material constituting the temperature measuring portion 211b, which will be described in detail later. Figure 2, an example is shown in which the temperature measuring unit 211b is provided at a position opposite to all the regions. The substrate thermocouple 211 is configured to rotate together with the substrate 1 when the wafer box 31 rotates and the substrate 1 rotates. In addition, the substrate thermocouple 211 is configured to rise and fall together with the substrate 1 when the wafer box 31 rises and falls. That is, the temperature measuring unit 211b is installed in a manner that moves together with the wafer box 31. Similar to the heater thermocouple 65 and the internal thermocouple 66, the temperature controller 64 is configured to feedback control the heater unit 40 based on the measurement results from the substrate thermocouple 211.

[0038] That is, the heater unit 40 is configured to set the temperature measuring parts of the substrate thermocouple 211, the internal thermocouple 66 and the heater thermocouple 65 for each heating area opposite to the substrate 1. That is, the heights of the temperature measuring parts of the substrate thermocouple 211, the internal thermocouple 66 and the heater thermocouple 65 are configured to be roughly the same. Therefore, the temperature of the substrate 1 configured in each heating area can be accurately measured. In addition, the substrate thermocouple 211, the internal thermocouple 66 and the heater thermocouple 65 are not limited to thermocouples as long as they can measure the temperature as an electrical signal, and can also be other sensors such as temperature measuring resistors. In addition, as other temperature sensors other than the substrate thermocouple 211, any one of the internal thermocouple 66 and the heater thermocouple 65 is used.

[0039] The rotating shaft 30 has a hole through which the cable 211 c passes, and a sealing member or the like is used to perform vacuum sealing, thereby forming a structure of the transmission unit 221 that pulls the cable 211 c out of the processing chamber 14 (eg, below the rotating shaft 30 ).

[0040] The transmitting unit 221 and the receiving unit 222 are arranged in the transfer chamber 3 outside the processing space. The transmitting unit 221 is fixed coaxially with the center of the rotating shaft 30, and rotates and rises and falls together with the rotating shaft 30. That is, the transmitting unit 221 is configured to be connected to the substrate thermocouple 211 outside the processing chamber 14 for processing the substrate 1, and rotates and rises and falls integrally with the wafer box 31. The transmitting unit 221 is configured to be able to transmit the electrical signal (voltage) from the substrate thermocouple 211 input through the cable 211c in a wireless transmission manner by radio waves.

[0041] In addition, the receiving unit 222 is arranged closest to the transmitting unit 221. The receiving unit 222 is configured to receive the signal output from the transmitting unit 221. In addition, the receiving unit 222 is provided in the transfer chamber 3, but is not limited to this mode. It can also be arranged outside the transfer chamber 3, and can also be arranged at a position away from the substrate processing device 10.

[0042] Next, use Figure 3 (A) and Figure 3 (B) The substrate thermocouple 211 is described in detail.

[0043] The substrate thermocouple 211 is configured to include a temperature measuring portion 211b, a detection portion 2111 in which the temperature measuring portion 211b is arranged, and a column 2112 extending in the vertical direction in a manner of supporting the detection portion 2111 in the horizontal direction. The detection portion 2111 and the column 2112 are, for example, cylindrical and are configured to pass the temperature measuring portion 211b and the cable 211c inside. Thus, the temperature measuring portion 211b and the cable 211c can be isolated from the processing space. The detection portion 2111 and the column 2112 are, for example, formed integrally. The detection portion 2111 and the column 2112 are formed of the same material (material) with good heat resistance, for example, quartz. By using the same material as the wafer box 31, for example, quartz, to constitute the detection portion 2111 and the column 2112, the influence on the substrate processing can be reduced. Therefore, the temperature of the substrate 1 can be accurately measured, and the control time of the substrate temperature in the substrate processing can be greatly shortened.

[0044] The lower end of the detection unit 2111 is arranged at the same height position as or higher than the lower end of the support unit 35. In addition, the surface of the column 2112 on the processing space side, i.e., the substrate 1 side, is arranged away from the processing space, i.e., away from the substrate 1, relative to the surface of the support 34 on the processing space side, i.e., the substrate 1 side, which supports the support unit 35 in the horizontal direction. At least one (in the region where the substrate 1 is arranged) of the processing space side is provided. Figure 2 (five in total) detection units 2111. Since the detection units 2111 are arranged in the processing space, the temperature of the substrate 1 can be accurately measured.

[0045] The temperature measuring portion 211b is configured to be arranged in a processing space formed between the substrates 1 supported on the support portion 35 of the wafer box 31. In addition, the temperature measuring portion 211b is arranged at the peripheral portion of the substrate 1 near the back side of the substrate 1. Specifically, the temperature measuring portion 211b is arranged on the inner side of the substrate 1 (also referred to as the center side of the substrate 1) relative to the peripheral end of the substrate 1. In addition, the temperature measuring portion 211b is arranged near the support 34. Here, "near the support 34" means that when the substrate 1 is held on the support portion 35, it is arranged at a position close to the support 34 relative to the middle position between the support 34 and the center of the substrate 1. In this way, the substrate thermocouple 211 (temperature measuring portion 211b) is arranged in the space (space between the substrates) where the substrate 1 is processed, so that the temperature of the processing space close to the substrate 1 relative to the heater thermocouple 65 and the internal thermocouple 66 can be measured. Therefore, the temperature of the substrate 1 can be measured more accurately, and the control time can be greatly shortened.

[0046] like Figure 3As shown in (A), in the side view of the support portion 35, the detection portion 2111 is arranged at a position included in the inner side of the outer shape of the support portion 35. That is, in the side view of the support portion 35, the detection portion 2111 is configured to be smaller than the outer shape of the support portion 35. In addition, the cross-sectional area of ​​the detection portion 2111 is configured to be smaller than the cross-sectional area of ​​the support portion 35.

[0047] like Figure 3 As shown in (A), the detection portion 2111 and the support portion 35 extend toward the inner side of the substrate 1 relative to the peripheral portion of the substrate 1. The support portion 35 is configured to extend toward the inner side of the substrate 1 relative to the detection portion 2111. The extension amount of the detection portion 2111 from the peripheral portion of the substrate 1 toward the inner side of the substrate 1 is shorter than the extension amount of the support portion 35 from the peripheral portion of the substrate 1 toward the inner side of the substrate 1. That is, the front end of the detection portion 2111 is configured to be located between the front end of the support portion 35 and the peripheral portion of the substrate 1.

[0048] In addition, if Figure 3 As shown in (B), in the top view of the substrate 1 from above, the detection portion 2111 is arranged at a position that does not overlap with the center O of the substrate 1 on the extension line of the length direction. In other words, the length direction of the detection portion 2111 is arranged at an angle that is not 0 degrees with the center direction of the substrate 1. In addition, the length direction of the detection portion 2111 can also be arranged by adding an angle along the peripheral end portion of the substrate 1. In this way, the detection portion 2111 can be brought closer to the substrate 1, and the substrate thermocouple 211 can be stored in a narrow space.

[0049] in addition, Figure 3 This shows an example in which the detection portion 2111 is arranged at a position included in the inner side of the outer shape of the support portion 35 in a side view of the support portion 35. As described above, the lower end of the detection portion 2111 can be arranged at the same height position as or higher than the lower end of the support portion 35. Therefore, it can also be constructed so that the detection portion 2111 is on an extension line in the longitudinal direction toward the center O of the substrate 1.

[0050] As described above, by configuring the lower end of the detection portion 2111 to be at the same height position as or higher than the lower end of the support portion 35, contact (interference) between the substrate 1 and the substrate thermocouple 211 during transportation between the substrate 1 and the wafer box 31 can be avoided. Therefore, regardless of whether the substrate thermocouple 211 is configured, the substrate 1 can be transported between the wafer box 31. In addition, the influence of the configuration position of the substrate thermocouple 211 on the processing of the substrate 1 can be reduced. In particular, if Figure 3 As shown, by configuring the detection portion 2111 to be disposed at a position included inside the outer shape of the support portion 35 , it is possible to expect an effect of reducing the influence on the processing of the substrate 1 .

[0051] Next, use Figures 4 to 6, how the substrate thermocouple 211 of this embodiment is mounted on the wafer box 31 is described.

[0052] The substrate thermocouple 211 is arranged in a manner of being vertically arranged in the vicinity of the pillar 34 of the wafer box 31 along the arrangement direction of the substrate 1. An upper end connecting portion 212 is provided at the upper end of the pillar portion 2112. The upper end connecting portion 212 is configured to connect the substrate thermocouple 211 to the end plate 32 of the wafer box 31. In addition, a lower end connecting portion 213 is provided at the lower end of the pillar portion 2112. The lower end connecting portion 213 is configured to connect the substrate thermocouple 211 to the end plate 33 of the wafer box 31.

[0053] That is, the substrate thermocouple 211 is configured to be mounted on the wafer box 31 via the upper end connection portion 212 and the lower end connection portion 213. Therefore, the detection portion 2111 and the column portion 2112 are configured not to contact the wafer box 31 and not to affect the temperature of the substrate 1. Thus, the influence on the processing of the substrate 1 can be reduced, and the control time of the substrate temperature can be greatly shortened.

[0054] The upper end connecting portion 212 includes: a cylindrical first member 2120 connected to the upper end of the column 2112; a cylindrical second member 2121 connected to the first member 2120 on a concentric circle at the upper part of the first member 2120; a flat plate-shaped third member 2122 extending from the second member 2121 in a substantially horizontal direction; and a cylindrical fourth member 2123 provided on the lower surface of the third member 2122. The second member 2121 and the third member 2122 are continuously connected in an R shape. In addition, the corner of the abutting surface of the fourth member 2123 with the end plate 32 is formed in an R shape.

[0055] The lower end connection part 213 includes: a first component 2131 connected to the lower end of the column 2112 and fixed to the upper surface of the annular end plate 33; a second component 2132 connected to the lower end of the column 2112; and a third component 2133 connected to the second component 2132. The second component 2132 and the third component 2133 are, for example, cylindrical and configured to allow the cable 211c to pass through the inside. The second component 2132 is configured to arrange the cable 211c in the column 2112 in the third component 2133 arranged inside the rotating shaft 30. The lower end connection part 213 is used to isolate the lower part of the processing space and the cable 211c arranged inside the rotating shaft 30 from the processing space. The lower end connection part 213 is made of quartz, for example.

[0056] The cable 211c in the lower end connection part 213 is connected to the transmission part 221 via the AD conversion board 224. The AD conversion board 224 rotates together with the rotating shaft 30 and is placed on the rotating table 223 that is raised and lowered. The AD conversion board 224 converts the electrical signal (voltage) from the substrate thermocouple 211 input via the cable 211c into a digital signal and transmits it to the transmission part 221. Then, the transmission part 221 is configured to transmit the digital signal to the receiving part 222 in a wireless transmission manner through radio waves.

[0057] The receiving unit 222 is configured to receive the signal transmitted by the transmitting unit 221 and input temperature data to a display input device 206 or a temperature controller 64 described later based on the received digital signal.

[0058] Next, use Figure 7 The controller 200 which is a control computer serving as a control unit will be described.

[0059] like Figure 7 As shown, the controller 200 has: a computer body 203 including a CPU (Central Processing Unit) 201 and a memory 202 as a central part; a communication IF (Interface) 204 as a communication part; a storage device 205 as a storage part; and a display input device 206 as a display part (operation part). That is, the controller 200 includes components as a general computer.

[0060] The CPU 201 constitutes the core of the operation unit, executes the control program stored in the storage device 205, and executes the recipe (for example, the process recipe) recorded in the storage device 205 according to the instruction from the display input device 206. In addition, the memory 202 as a temporary storage unit functions as a work area of ​​the CPU 201.

[0061] In addition, the means for supplying the program to the computer is not limited to the case of supplying via the storage device 205. For example, the program may be supplied without passing through the storage device 205 by using a communication unit such as the Internet or a dedicated line. In addition, the memory 202 and the storage device 205 are configured as a computer-readable recording medium. Hereinafter, they are collectively referred to as recording media. In addition, when the term "recording medium" is used in this specification, there is a case where only the memory 202 alone is included, a case where only the storage device 205 alone is included, or a case where both are included.

[0062] The communication IF 204 as a communication unit is electrically connected to the pressure controller 21, the gas flow controller 24, the drive controller 28, and the temperature controller 64 (sometimes collectively referred to as sub-controllers) through a communication path. The controller 200 can exchange data related to the operation of each component with the sub-controllers via the communication IF 204.

[0063] like Figure 8 As shown, the temperature controller 64 includes a control unit 64a, a communication IF 64b, a thermocouple input unit 64c, and a control output unit 64d.

[0064] The control unit 64a has a hardware structure as a general computer including a CPU, a memory, etc. The control unit 64a executes a control program, uses information obtained from the communication IF 64b and the thermocouple input unit 64c, performs a control operation in accordance with a temperature control algorithm described later, and outputs the operation result to the control output unit 64d.

[0065] The communication IF 64b has a wired IF for connecting to the controller 200 or the like as a host controller, and receives information such as target temperature and control parameters from the controller 200, or transmits control calculation results and temperature information. In addition, the communication IF 64b receives wafer box position information from the drive controller 28 of the lifting mechanism 26. In addition, the communication IF 64b receives setting information including allocation information set by the display input device 206. The received information is temporarily stored in the memory.

[0066] The thermocouple input unit 64c has a wireless IF, that is, a receiving unit 222, for connecting to the transmitting unit 221 fixed to the wafer box 31. In addition, the thermocouple input unit 64c inputs an electrical signal corresponding to the temperature from the substrate thermocouple 211, the heater thermocouple 65, and the internal thermocouple 66, converts it into a digital signal, and outputs it to the control unit 64a. The control output unit 64d outputs a heater control signal for temperature control of the heater unit 40 based on the calculation result received from the control unit 64a.

[0067] In the following description, the temperature detected by the heater thermocouple 65 is referred to as the heater temperature, and the temperature control using the heater thermocouple 65 is referred to as the heater temperature control. In addition, the temperature detected by the substrate thermocouple 211 is referred to as the substrate temperature, and the temperature control using the substrate thermocouple 211 is referred to as the substrate temperature control. In addition, the temperature detected by the internal thermocouple 66 is referred to as the furnace temperature, and the temperature control using the internal thermocouple 66 is referred to as the furnace temperature control.

[0068] Next, use Fig. 9 (A) and Fig. 9(B) will describe an example of a substrate processing sequence performed by the substrate processing apparatus 10. In the following, the temperature controller 64 controls the heater unit 40 using a temperature detected by at least one of the substrate thermocouple 211, the heater thermocouple 65, and the internal thermocouple 66.

[0069] Step S101 (standby step) is a process for stabilizing the temperature of the processing chamber 14 to a target temperature T0 of a standby temperature (preparation temperature). In step S101 , the substrate 1 has not yet been loaded into the processing chamber 14 .

[0070] Step S102 (cassette loading step) is a process of loading the substrate 1 held in the cassette 31 into the processing chamber 14 . The drive controller 28 raises the cassette 31 via the lifting mechanism 26 and carries the cassette into the processing chamber 14 .

[0071] Before being carried into the processing chamber 14, the temperature of the wafer box 31 and the substrate 1 is lower than the temperature of the processing chamber 14 (i.e., T0). In addition, as a result of the substrate 1 being introduced into the processing chamber 14, the atmosphere (room temperature) outside the processing chamber 14 is introduced into the processing chamber 14. Fig. 9 As shown in (B), the temperature of the processing chamber 14 temporarily drops below T0. After that, the temperature of the processing chamber 14 stabilizes to T0 again after a certain period of time through control by the temperature controller 64. In this embodiment, since the temperature is detected by the substrate thermocouple 211, the temperature is stabilized at the target temperature T0, so the time required to stabilize to the target temperature T0 can be shortened compared to the conventional method of using the temperature detected by at least one of the heater thermocouple 65 and the internal thermocouple 66. Fig. 9 In (B), the stabilization time after the processing substrate is put into the processing chamber 14 and the target temperature of the next step S103 are shown as being equal to those of step S101, but there is a case where the target temperature after the input is different from the required condition (processing temperature) of step S103. The processing temperature in this specification refers to the temperature of the substrate 1 or the temperature of the processing chamber 14. This also applies to the following description.

[0072] Step S103 (processing step) is a process for maintaining the temperature of the processing chamber 14 at a target temperature T0 of the processing temperature and stabilizing it in order to perform a predetermined process on the substrate 1. The temperature controller 64 controls the heater unit 40 so that the measured temperature of the temperature sensor approaches the target temperature T0. For example, the temperature controller 64 controls the heater unit 40 so that the temperature detected by the substrate thermocouple 211 approaches the target temperature T0. At this time, the substrate thermocouple 211 is arranged in the processing space, but is configured so that the lower end of its detection part 2111 is arranged at the same position as or higher than the lower end of the support part 35 of the wafer box 31, so that the height from the surface of the substrate 1 is greater than the support part 35, thereby suppressing the influence on the process on the surface of the substrate 1. In addition, the column portion 2112 of the substrate thermocouple 211 is arranged near the support portion 35. In a side view based on the support portion 35, the surface of the column portion 2112 on the processing space side is arranged away from the processing space relative to the surface of the support portion 34 on the processing space side that supports the support portion 35 in the horizontal direction. Therefore, it is away from the processing space, i.e., the substrate 1, thereby suppressing the influence on the processing on the surface of the substrate 1.

[0073] Step S104 (cassette unloading step) is a process of pulling the processed substrate 1 out of the processing chamber 14 together with the cassette 31 . The drive controller 28 lowers the cassette 31 via the lifting mechanism 26 and carries it out (transports) to the transfer chamber 3 .

[0074] If there are unprocessed substrates 1 that should be processed, the processed substrates 1 are removed from the wafer cassette 31 and replaced with unprocessed substrates 1 , and the series of processes of steps S101 to S104 are repeated.

[0075] Steps S101 to S104 are implemented after a stable state is obtained in which the temperature of the processing chamber 14 is within a predetermined small temperature range with respect to the target temperature and this state continues for a predetermined time or longer.

[0076] According to this aspect, one or more of the following effects can be obtained.

[0077] (a) According to this embodiment, the process of conveying the substrate 1 to the wafer box 31 can be performed without contact (also called interference) with the substrate thermocouple 211. In addition, the influence of the processing gas during the substrate processing can be reduced. Therefore, the substrate thermocouple 211 can be arranged in the processing space near the substrate 1, so that the time until the target temperature is stabilized can be shortened, and as a result, the control time of the substrate temperature in a series of processes can be greatly shortened.

[0078] (b) According to the present embodiment, the substrate thermocouple 211 can be arranged to be housed in the wafer box 31 in a side view of the support portion 35, so that the influence on the processing of the substrate 1 can be reduced. Therefore, the substrate temperature can be controlled based on the temperature detected by the substrate thermocouple 211 arranged in the processing space, so the time until the target temperature is stabilized can be shortened, and as a result, it can be expected that the temperature control time in a series of processes can be shortened.

[0079] (c) According to this embodiment, the substrate thermocouple 211 can be brought close to the substrate 1, so that the temperature of the substrate 1 can be accurately measured and the time until the target temperature is stabilized can be shortened. As a result, the control time in substrate processing can be greatly shortened.

[0080] (d) According to the present embodiment, the substrate thermocouple 211 can be mounted on the wafer cassette 31 so as to operate together with the wafer cassette 31, thereby being able to measure the temperature of the substrate 1 without being affected by temperature fluctuations caused by the operation of the wafer cassette 31. For example, even if fluctuations associated with rotation occur, highly accurate temperature control can be performed.

[0081] (e) According to this embodiment, the detection portion 2111 and the column portion 2112 are made of the same material as the wafer box 31, so that the influence on the processing of the substrate 1 can be reduced, so that the temperature of the substrate 1 can be accurately measured, and the substrate temperature control time during substrate processing can be greatly shortened.

[0082] (f) According to this embodiment, the detection unit 2111 and the pillar 2112 are configured not to contact the wafer box 31, so the detection unit 2111 and the pillar 2112 can not affect the temperature of the substrate 1. Therefore, the influence on the processing of the substrate 1 can be reduced, and the control time of the substrate temperature can be greatly shortened.

[0083] (g) According to the present embodiment, since the transmission unit 221 and the reception unit 222 are arranged outside the same processing space, the wireless transmission distance can be shortened, thereby enabling high-quality communication that is less susceptible to interference and disturbance.

[0084] (h) According to the present embodiment, wireless power supply based on electromagnetic induction can be performed by placing the transmission unit 221 and the reception unit 222 in the closest proximity. This eliminates the need for a battery in the rotating unit, thereby improving maintainability.

[0085] (i) According to the present embodiment, the center of the rotating shaft 30 and the center of the transmitting unit 221 are coaxially configured, so that even when the wafer cassette 31 is rotated, wireless transmission is performed without axis deviation.

[0086] (j) According to the present embodiment, since the detection portion 2111 of the substrate thermocouple 211 is arranged at an angle, the detection portion 2111 can be brought closer to the substrate 1 , and the substrate thermocouple 211 can be accommodated in a narrow space.

[0087] The embodiments of the present disclosure have been described in detail above. However, the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present disclosure.

[0088] For example, as a substrate processing device, it can be applied not only to semiconductor manufacturing devices but also to devices that process glass substrates such as LCD devices. In addition, the process is not particularly limited and can be any process. If it is a film forming process, for example, it is not limited to CVD, PVD, forming an oxide film, a nitride film, or a process of forming both, forming a film containing metal, etc., and in particular, the type of film is not limited. In addition, it can also be an annealing process other than film forming, oxidation process, nitridation process, diffusion process, etc.

[0089] Description of Reference Numerals

[0090] 1 substrate

[0091] 31 Wafer box (substrate support)

[0092] 35 Supporting part

[0093] 211 substrate thermocouple (temperature sensor)

[0094] 211b Temperature measurement unit

[0095] 212 Testing Department

[0096] 213 Column.

Claims

1. A temperature sensor, characterized in that: Include: a temperature measuring portion disposed in a processing space formed between substrates supported on a support portion of a substrate support; A detection unit of the temperature measuring unit is arranged inside; as well as The column portion extends in the vertical direction so as to support the detection portion in the horizontal direction. The lower end of the detection part is arranged at the same height position as or higher than the lower end of the support part. The surface of the column portion on the processing space side is arranged away from the processing space with respect to the surface of the column portion on the processing space side that supports the support portion in the horizontal direction.

2. The temperature sensor according to claim 1, characterized in that: The detection unit is arranged at a position included inside an outer shape of the support unit in a side view of the support unit.

3. The temperature sensor according to claim 1, characterized in that: In a side view of the support portion, the detection portion and the support portion extend toward the inner side of the substrate relative to the peripheral portion of the substrate, and the extension amount of the detection portion from the peripheral portion of the substrate to the inner side of the substrate is shorter than the extension amount of the support portion from the peripheral portion of the substrate to the inner side of the substrate.

4. The temperature sensor according to claim 1, characterized in that: In a side view of the support portion, the detection portion and the support portion extend inwardly of the substrate relative to a peripheral edge portion of the substrate, and the support portion is configured to extend inwardly of the substrate relative to the detection portion.

5. The temperature sensor according to claim 1, characterized in that: In a side view of the support portion, the front end of the detection portion is arranged to be located between the front end of the support portion and the peripheral edge portion of the substrate.

6. The temperature sensor according to claim 1, characterized in that: The cross-sectional area of ​​the detection portion is configured to be smaller than the cross-sectional area of ​​the support portion.

7. The temperature sensor according to claim 1, characterized in that: The temperature measuring portion is configured to be arranged at a peripheral portion of the substrate.

8. The temperature sensor according to claim 1, characterized in that: The temperature measuring unit is configured to be arranged near the rear surface of the substrate.

9. The temperature sensor according to claim 1, characterized in that: The temperature measuring unit is installed so as to operate together with the substrate support.

10. The temperature sensor according to claim 1, characterized in that: The detection portion or the column portion is configured not to come into contact with the substrate support.

11. The temperature sensor according to claim 1, characterized in that: At least one of the detection units is provided in a region of the processing space where the substrate is disposed.

12. The temperature sensor according to claim 1, characterized in that: having a plurality of heating regions for heating the substrate, The detection unit is configured to be provided for each of the heating regions facing the substrate.

13. The temperature sensor according to claim 1, characterized in that: An upper end connection portion is provided at the upper end of the column portion, and the upper end connection portion connects the column portion to the substrate support member.

14. The temperature sensor according to claim 1, characterized in that: A lower end connection portion is provided at the lower end of the column portion, and the lower end connection portion connects the column portion to the substrate support member.

15. A substrate processing device, characterized in that: The substrate processing device includes a temperature sensor The temperature sensor comprises: a temperature measuring portion disposed in a processing space formed between substrates supported on a support portion of a substrate support; A detection unit of the temperature measuring unit is arranged inside; as well as The column portion extends in the vertical direction so as to support the detection portion in the horizontal direction. The lower end of the detection part is arranged at the same height position as or higher than the lower end of the support part. The surface of the column portion on the processing space side is arranged away from the processing space with respect to the surface of the column portion on the processing space side that supports the support portion in the horizontal direction.

16. The substrate processing apparatus according to claim 15, wherein: The substrate processing device comprises: a rotating mechanism that rotates the substrate support; a transmitting unit connected to the temperature sensor outside a processing chamber for processing the substrate and rotating integrally with the substrate support; as well as The receiving unit is located outside the processing chamber and receives the signal output from the transmitting unit.

17. The substrate processing apparatus according to claim 16, wherein: The transmitting unit and the receiving unit are configured to be disposed closest to each other.

18. The substrate processing apparatus according to claim 15, wherein: The detection portion is disposed at a position that does not overlap with the center of the substrate on an extension line in the longitudinal direction of the detection portion in a plan view of the substrate from above.

19. A method for manufacturing a semiconductor device, characterized in that: have: A step of controlling a heating mechanism using a temperature detected by a temperature sensor to bring the substrate to a processing temperature; and The step of treating the substrate at the treatment temperature, Wherein, the temperature sensor comprises: a temperature measuring portion disposed in a processing space formed between substrates supported on a support portion of a substrate support; A detection unit of the temperature measuring unit is disposed inside; and The column portion extends in the vertical direction so as to support the detection portion in the horizontal direction. The lower end of the detection part is arranged at the same height position as or higher than the lower end of the support part. The surface of the column portion on the processing space side is arranged away from the processing space with respect to the surface of the column portion on the processing space side that supports the support portion in the horizontal direction.

20. A temperature control system, characterized in that: have: temperature sensor; and a control unit that controls the temperature of the substrate using the temperature detected by the temperature sensor, Wherein, the temperature sensor comprises: a temperature measuring portion disposed in a processing space formed between substrates supported on a support portion of a substrate support; A detection unit of the temperature measuring unit is disposed inside; and The column portion extends in the vertical direction so as to support the detection portion in the horizontal direction. The lower end of the detection part is arranged at the same height position as or higher than the lower end of the support part. The surface of the column portion on the processing space side is arranged away from the processing space with respect to the surface of the column portion on the processing space side that supports the support portion in the horizontal direction.

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