A one-dimensional ScGa3(ZnO) n Superlattice nanowire and preparation method thereof

Abstract

The present invention discloses a one-dimensional ScGa3(ZnO) n Superlattice nanowires and their preparation method relate to the technical field of superlattice nanowire preparation. The preparation method comprises: dissolving a zinc source, a scandium source, and a gallium source in an organic solvent, adding a stabilizer, stirring, and aging to obtain a ScGa-ZnO precursor solution; coating the ZnO nanowires with capillary action, drying, and heat treating to obtain a one-dimensional ScGa3(ZnO) n Superlattice nanowires. This invention utilizes high-temperature solid-state diffusion technology to ingeniously incorporate trace amounts of Sc and Ga into one-dimensional ZnO materials, successfully constructing a superlattice structure while maintaining the key fundamental properties of ZnO nanowires. Sc and Ga are finely modified on the surface of the ZnO nanowires in a form similar to atomic chains, imparting new properties and functions to the material. This invention addresses the existing problem of a lack of transition element-doped superlattice nanowires.

Description

Technical Field

[0001] The present invention relates to the technical field of superlattice nanowire preparation, and in particular to a one-dimensional ScGa3(ZnO) n Superlattice nanowires and methods for preparing the same. Background Art

[0002] As a wide-bandgap semiconductor material, ZnO has remarkable characteristics including excellent thermal conductivity, low dielectric constant, high breakdown electric field and high electron saturation rate. Compared with Si, GaAs, SiC and GaN materials widely used in the industry, ZnO exhibits more outstanding radiation resistance. This feature not only enables it to operate stably in high-temperature environments, but also greatly increases its potential in the development of high-frequency, high-power, high-temperature and radiation-resistant semiconductor devices. Therefore, ZnO is undoubtedly a semiconductor material with broad prospects.

[0003] In 1968, L.Esaki and R.Tsu, outstanding scientists at IBM Laboratories in the United States, first proposed the concept of superlattice. This milestone discovery not only marked a major advancement in the field of materials science, but also ushered in a new era of studying superlattice and quantum mechanical effects at a new physical scale. Superlattice material is a special semiconductor material structure. It is formed by periodically alternating the growth of two or more semiconductor materials with different band gaps and electron affinities in a manner with extremely high lattice matching through a carefully designed process. This unique combination gives superlattice materials a series of unique physical and chemical properties. Subsequently, the Kasper team successfully prepared In2O3(ZnO) n (n=2, 5, 7) superlattice structure, in 1988 Cannard and Tilley proposed that the structure is actually composed of In-O layer and In / Zn-O layer grown alternately. This new theory was subsequently confirmed by Kimizuka's team, and they found that InGaO3(ZnO) n andInFeO3(ZnO) n Similar structural phenomena have been found in materials such as ZnO. Based on these findings, scientists collectively refer to these materials as homologous compounds InMO3(ZnO). n (where M represents trivalent metal elements such as In, Ga, Al, and Fe, and n represents the period of layered stacking). This series of discoveries and studies not only deepened our understanding of the structure of superlattice materials, but also provided an important theoretical basis for future material design and applications. As research deepened, the general molecular formula of superlattice materials changed from InMO3(ZnO) to n Gradually extended to M2O3(ZnO) nGenerally speaking, researchers tend to choose binary elements such as In for co-doping to form superlattice materials with unique properties, while there is relatively little research on doping with transition elements. Summary of the Invention

[0004] In order to solve the above technical problems, the purpose of the present invention is to provide a one-dimensional ScGa3(ZnO) n Superlattice nanowires and a preparation method thereof are provided to solve the problem of lack of transition element-doped superlattice nanowires in the prior art.

[0005] The technical solution of the present invention to solve the above technical problems is as follows: a one-dimensional ScGa3(ZnO) n Superlattice nanowires and a method for preparing the same, comprising the following steps:

[0006] (1) ScGa-ZnO precursor solution: dissolve the zinc source, scandium source and gallium source in an organic solvent, add a stabilizer, stir at 80-90°C for 45-70 minutes, and age at room temperature in the dark for 30-48 hours to obtain a ScGa-ZnO precursor solution;

[0007] (2) Coating ZnO nanowires with ScGa-ZnO precursor solution: The Si substrate on which the ZnO nanowires are grown is tilted at an angle of 25-35°, and the ZnO nanowires are coated with the ScGa-ZnO precursor solution prepared in step (1) by capillary action, and then dried at 180-200°C for 25-35 minutes to obtain ScGa-ZnO precursor solution-coated ZnO nanowires;

[0008] (3) Heat treatment: The ScGa-ZnO precursor solution obtained in step (2) is coated with ZnO nanowires and heat treated at 1100-1200°C for 10-15 minutes to obtain one-dimensional ScGa3(ZnO) n Superlattice nanowires.

[0009] On the basis of the above technical solution, the present invention can also be improved as follows:

[0010] Furthermore, in step (1), the molar ratio of Zn, Sc and Ga in the zinc source, scandium source and gallium source is 1:1:1.

[0011] The beneficial effect of adopting the above further technical solution is that the interaction and reaction between them are more balanced, thereby reducing the chemical instability caused by fluctuations in element ratios and ensuring the stability and repeatability of the reaction.

[0012] Furthermore, in step (1), the zinc source is Zn(CH3COO)2·2H2O; the scandium source is Sc(NO3)3·2H2O; and the gallium source is Ga(NO3)3·2H2O.

[0013] The beneficial effect of adopting the above further technical solution is that these salt compounds usually have high purity and can reduce the impact of impurities on the performance of the nanowires.

[0014] Furthermore, in step (1), the volume ratio of the organic solvent to the stabilizer is 1000-5000:1.

[0015] Furthermore, in step (1), the volume ratio of the organic solvent to the stabilizer is 1000:1.

[0016] The beneficial effect of adopting the above-mentioned further technical solution is that the addition of a stabilizer can significantly improve the stability of the nanowires in organic solvents, preventing them from agglomerating or precipitating, thereby ensuring uniform dispersion and stability of the nanowires during the preparation process. Because the amount of stabilizer added is relatively small (a volume ratio of 1:1000), it does not introduce excessive impurities. This helps maintain the high purity of the nanowires and reduces the impact of impurities on nanowire performance.

[0017] Furthermore, in step (1), the organic solvent is ethylene glycol methyl ether.

[0018] The beneficial effect of adopting the above-mentioned further technical solution is that ethylene glycol methyl ether is a relatively stable compound that is not easily oxidized by oxygen in the air and is not easily decomposed by heat. This stability ensures that the solution is not easily deteriorated during the preparation of superlattice nanowires, which helps maintain the stability of the reaction system.

[0019] Furthermore, in step (1), the stabilizer is ethanolamine.

[0020] The beneficial effects of adopting the above-mentioned further technical solution are as follows: ethanolamine, as a stabilizer, has excellent stability and adsorption properties. When added to chemicals, it can stabilize the chemical's molecular structure by forming hydrogen bonds and van der Waals forces, preventing adverse reactions such as oxidation and volatilization.

[0021] Furthermore, in step (1), the stirring is carried out in a constant temperature magnetic stirrer in a sealed environment at a rotation speed of 150-250 r / min.

[0022] The beneficial effects of adopting the above further technical solution are: the constant temperature magnetic stirrer has the characteristics of high sensitivity and strong controllability, which can ensure temperature stability during the preparation process. Stirring within the speed range of 150-250r / min can ensure that the substances in the solution are evenly mixed.

[0023] Furthermore, in step (1), the concentration of the ScGa-ZnO precursor solution is 0.002-0.05 mol / L.

[0024] Furthermore, in step (1), the concentration of the ScGa-ZnO precursor solution is 0.01-0.05 mol / L.

[0025] Furthermore, in step (1), the concentration of the ScGa-ZnO precursor solution is 0.01 mol / L.

[0026] The beneficial effect of adopting the above further technical solution is that the ScGa-ZnO precursor solution with a concentration of 0.01 mol / L ensures a stable supply of solute during the experiment, which is conducive to the precise synthesis of nanomaterials, thereby obtaining products with specific structures and properties.

[0027] Furthermore, in step (2), the ScGa-ZnO precursor solution is dropped onto the inclined Si substrate, and the coating is achieved by solution diffusion.

[0028] The beneficial effect of adopting the above-mentioned further technical solution is that due to the use of an inclined Si substrate, the solution naturally spreads under the action of gravity, which helps to achieve a more uniform and efficient coating effect. This method can reduce unevenness and material waste during the coating process.

[0029] Furthermore, in step (3), heat treatment is performed in an air atmosphere.

[0030] The beneficial effect of adopting this further technical solution is that heat treatment in air atmosphere helps decompose organic matter and oxidize metal ions in the precursor solution, promoting the formation and crystallization of ScGa-ZnO nanostructures. This can improve the purity and crystallinity of the nanostructures, thereby enhancing their physical and chemical properties.

[0031] The present invention also provides a one-dimensional ScGa3(ZnO) prepared by the above method n Superlattice nanowires.

[0032] Furthermore, one-dimensional ScGa3(ZnO) n The diameter of the superlattice nanowires is 50-90nm and the length is 10-50μm.

[0033] The present invention also provides a one-dimensional ScGa3(ZnO) n Application of superlattice nanowires in the preparation of semiconductor materials.

[0034] The present invention has the following beneficial effects:

[0035] 1. The present invention successfully prepared one-dimensional ScGa3(ZnO) through a three-step high-temperature solid-state diffusion method. nA novel superlattice nanowire material. With the incorporation of Sc atoms, the system's lattice constant slightly increases, bond lengths lengthen, volume increases, and total energy increases. This change alters the electronic structure of ZnO, in turn affecting its physical and chemical properties. Due to the changes in the electronic structure and optical properties of Sc-doped ZnO, as well as its improved corrosion resistance, the present invention has potential applications in light-emitting devices, liquid crystal displays, gas sensors, and other fields.

[0036] 2. Based on the material's inherent properties, the present invention employs high-temperature solid-state diffusion technology to ingeniously incorporate trace amounts of Sc and Ga elements into the one-dimensional ZnO material, thereby successfully constructing a superlattice structure while maintaining the key fundamental properties of the ZnO nanowires. In this process, the Sc and Ga elements are finely modified on the surface of the ZnO nanowires in the form of approximate atomic chains, imparting new properties and functions to the material.

[0037] 3. XRD (X-ray diffraction) testing revealed no detectable presence of compounds such as scandium oxide and gallium oxide in the ScGa-ZnO superlattice nanowires, demonstrating the high purity of the superlattice nanowires, free of significant impurities. In-depth analysis using XPS (X-ray photoelectron spectroscopy) revealed a high concentration of oxygen vacancies, a property closely and inextricably linked to superlattice formation. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is the SEM image of ZnO nanowires in Comparative Example 1 (5 μm);

[0039] Figure 2 This is the SEM image of ZnO nanowires (500 nm) of Comparative Example 1;

[0040] Figure 3 ZnO nanowire STEM of Comparative Example 1 Figure 1 (50nm);

[0041] Figure 4 ZnO nanowire STEM of Comparative Example 1 Figure 2 (50nm);

[0042] Figure 5 This is the SEM (5 μm) image of the superlattice nanowire of Example 1;

[0043] Figure 6 This is the SEM image of the superlattice nanowire of Example 1 (100 nm);

[0044] Figure 7 The superlattice nanowire STEM of Example 1 Figure 1 (50nm);

[0045] Figure 8 The superlattice nanowire STEM of Example 1 Figure 2 (50nm);

[0046] Figure 9 XRD patterns of nanowires in Example 1 and Comparative Example 1;

[0047] Figure 10 for Figure 9 A local magnified view of the ZnO(100) peak position;

[0048] Figure 11 for Figure 9 A local magnified view of the ZnO (002) peak position;

[0049] Figure 12 for Figure 9 A local magnified view of the ZnO(110) peak position;

[0050] Figure 13 This is the XPS image (Zn 2p) of the superlattice nanowire of Example 1;

[0051] Figure 14 This is the XPS image (Ga 2p3) of the superlattice nanowire of Example 1;

[0052] Figure 15 This is the XPS image (Sc 2p) of the superlattice nanowire of Example 1;

[0053] Figure 16 This is the XPS graph of the superlattice nanowire of Example 1 (O 1s). DETAILED DESCRIPTION

[0054] The principles and features of the present invention are described below in conjunction with the accompanying drawings. The examples are only used to explain the present invention and are not intended to limit the scope of the invention. In the embodiments, if specific conditions are not specified, they are carried out according to conventional conditions or conditions recommended by the manufacturer. If the manufacturer of the reagents or instruments is not specified, they are all conventional products that can be purchased commercially.

[0055] Example 1:

[0056] A one-dimensional ScGa3(ZnO) n The preparation method of the superlattice nanowire comprises the following steps:

[0057] (1) ScGa-ZnO precursor solution: Accurately weigh 0.0219 g of zinc source (Zn(CH3COO)2·2H2O), 0.0231 g of scandium source (Sc(NO3)3·2H2O) and 0.0256 g of gallium source (Ga(NO3)3·2H2O) using an analytical balance, place them in a clean beaker, add 10 mL of organic solvent ethylene glycol methyl ether, add 10 μL of stabilizer ethanolamine, place a magnetic stirring rotor in the beaker, and seal the beaker with high-temperature sealing glue and tape to ensure that no liquid splashes during stirring. Then, place the sealed beaker in a constant temperature magnetic stirrer, stir at 70°C and 200 r / min for 60 min, and age in the dark at room temperature for 24 h to obtain a ScGa-ZnO precursor solution with a concentration of 0.01 mol / L;

[0058] (2) ScGa-ZnO precursor solution coating ZnO nanowires: Place the Si substrate with ZnO nanowires grown on a glass slide tilted at 30°, use a pipette to accurately absorb 20 μL of the ScGa-ZnO precursor solution prepared in step (1), and drip the solution onto the upper edge of the Si substrate sample to ensure that the solution gradually diffuses and completely infiltrates the ZnO nanowires. Through capillary action, the ScGa-ZnO precursor solution coats the ZnO nanowires. Dry in an oven at 150°C for 20 minutes to remove the solvent in the precursor solution on the surface of the nanowires, ensuring that the precursor can firmly adhere to the surface of the nanowires, and obtain ScGa-ZnO precursor solution-coated ZnO nanowires;

[0059] (3) Heat treatment: The ScGa-ZnO precursor solution obtained in step (2) is coated with ZnO nanowires and placed in a porcelain boat. The porcelain boat is then placed in a tube furnace and heat treated at 900°C in an air atmosphere for 15 minutes to allow the Sc and Ga elements in the precursor to enter the ZnO interior through solid-state diffusion and replace Zn atoms to obtain one-dimensional ScGa3(ZnO). n Superlattice nanowires.

[0060] Example 2:

[0061] A one-dimensional ScGa3(ZnO) n The preparation method of the superlattice nanowire comprises the following steps:

[0062] (1) ScGa-ZnO precursor solution: Accurately weigh 0.0219 g of zinc source (Zn(CH3COO)2·2H2O), 0.0231 g of scandium source (Sc(NO3)3·2H2O), and 0.0256 g of gallium source (Ga(NO3)3·2H2O) using an analytical balance, place them in a clean beaker, add 50 mL of organic solvent ethylene glycol methyl ether, add 10 μL of stabilizer ethanolamine, place a magnetic stirring rotor in the beaker, and seal the beaker with high-temperature sealing glue and tape to ensure that no liquid splashes during stirring. After that, place the sealed beaker in a constant temperature magnetic stirrer, stir at 80°C and 200 r / min for 45 min, and age in the dark at room temperature for 30 h to obtain a ScGa-ZnO precursor solution with a concentration of 0.002 mol / L;

[0063] (2) ScGa-ZnO precursor solution coating ZnO nanowires: Place the Si substrate with ZnO nanowires grown on a glass slide tilted at 25°, use a pipette to accurately absorb 20 μL of the ScGa-ZnO precursor solution prepared in step (1), and drip the solution onto the upper edge of the Si substrate sample to ensure that the solution gradually diffuses and completely infiltrates the ZnO nanowires. The ScGa-ZnO precursor solution coats the ZnO nanowires through capillary action. Dry in an oven at 180°C for 35 minutes to remove the solvent in the precursor solution on the surface of the nanowires, ensuring that the precursor can firmly adhere to the surface of the nanowires, and obtain ScGa-ZnO precursor solution-coated ZnO nanowires;

[0064] (3) Heat treatment: The ScGa-ZnO precursor solution obtained in step (2) is coated with ZnO nanowires and placed in a porcelain boat. The porcelain boat is then placed in a tube furnace and heat treated at 1100°C in an air atmosphere for 15 minutes to allow the Sc and Ga elements in the precursor to enter the ZnO interior through solid-state diffusion and replace Zn atoms to obtain one-dimensional ScGa3(ZnO). n Superlattice nanowires.

[0065] Example 3:

[0066] A one-dimensional ScGa3(ZnO) n The preparation method of the superlattice nanowire comprises the following steps:

[0067] (1) ScGa-ZnO precursor solution: Accurately weigh 0.1095 g of zinc source (Zn(CH3COO)2·2H2O), 0.1155 g of scandium source (Sc(NO3)3·2H2O) and 0.1280 g of gallium source (Ga(NO3)3·2H2O) using an analytical balance, place them in a clean beaker, add 10 mL of organic solvent ethylene glycol methyl ether, add 10 μL of stabilizer ethanolamine, place a magnetic stirring rotor in the beaker, and seal the beaker with high-temperature sealing glue and tape to ensure that no liquid splashes during stirring. After that, place the sealed beaker in a constant temperature magnetic stirrer, stir at 90°C and 200 r / min for 45 min, and age in the dark at room temperature for 48 h to obtain a ScGa-ZnO precursor solution with a concentration of 0.05 mol / L;

[0068] (2) ScGa-ZnO precursor solution coated ZnO nanowires: Place the Si substrate with ZnO nanowires grown on a glass slide tilted at 35°, use a pipette to accurately absorb 20 μL of the ScGa-ZnO precursor solution prepared in step (1), and drip the solution on the upper edge of the Si substrate sample to ensure that the solution gradually diffuses and completely infiltrates the ZnO nanowires. Through capillary action, the ScGa-ZnO precursor solution coats the ZnO nanowires. Dry in an oven at 200°C for 25 minutes to remove the solvent in the precursor solution on the surface of the nanowires, ensuring that the precursor can firmly adhere to the surface of the nanowires, and obtain ScGa-ZnO precursor solution coated ZnO nanowires;

[0069] (3) Heat treatment: The ScGa-ZnO precursor solution obtained in step (2) is coated with ZnO nanowires and placed in a porcelain boat. The porcelain boat is then placed in a tube furnace and heat treated at 1200°C in an air atmosphere for 10 minutes to allow the Sc and Ga elements in the precursor to enter the ZnO interior through solid-state diffusion and replace Zn atoms to obtain one-dimensional ScGa3(ZnO). n Superlattice nanowires.

[0070] Comparative Example 1:

[0071] Unheat-treated ZnO nanowires.

[0072] Test example

[0073] 1. SEM / STEM Characterization

[0074] The one-dimensional ScGa3(ZnO) prepared in Example 1 n The superlattice nanowires and the untreated ZnO nanowires of Comparative Example 1 were subjected to SEM and STEM examinations. Figure 1-8 .

[0075] Depend on Figure 1-8 It can be seen that in Figure 6 We can clearly see the etching marks, which reveal subtle changes in the material surface. Figure 7-8 They show a clear bright-dark-bright stripe pattern. This unique light-dark structure is not accidental, but is caused by the contrast difference caused by elements of different atomic masses. These differences not only reveal the microstructure inside the material, but also provide important clues for us to understand its properties. The formation of this structure is due to the special arrangement of Ga atoms in the Sc-O and Ga / Zn-O layers, which effectively reduces the strain energy of the material and provides favorable conditions for the doping process. The discovery of this structure not only enriches our understanding of the microstructure of the material, but also provides new ideas for us to design more efficient doping strategies.

[0076] Precise ruler measurements revealed a significant change in the average diameter of the ZnO nanowires after heat treatment, increasing from an initial diameter of approximately 50 nm to 73 nm after heat treatment at 900°C for 15 minutes. This change not only demonstrates the impact of heat treatment on the material's morphology but also provides important insights into its structural evolution. Furthermore, in doping experiments, we observed the co-doping of Sc and Ga. Sc, with its lower strain energy and energetic advantages, successfully introduced Ga, forming a Sc-Ga co-doped Sc-Ga-Zn-O superlattice structure. This discovery not only validates our theoretical predictions but also provides a new strategy for preparing high-performance superlattice materials.

[0077] Based on the above observations and analysis, we can conclude that the Sc-Ga co-doping forms a layered structure with alternating bright-dark-bright patterns and clear boundaries within the material. This structure conforms to the typical characteristics of a superlattice, demonstrating not only the orderly arrangement of elements within the material but also its unique physical and chemical properties. Therefore, as trivalent elements, Sc and Ga have a higher degree of compatibility and are more easily incorporated into the octahedral structure, thereby promoting the formation and stability of the superlattice structure.

[0078] 2. XRD Characterization

[0079] The one-dimensional ScGa3(ZnO) prepared in Example 1 was n The superlattice nanowires and the pure ZnO nanowires of comparative example 1 were subjected to XRD (X-ray diffraction) detection, and the results are shown in FIG. Figure 9-12 .

[0080] Depend on Figure 9 It can be seen that no Sc2O3 and Ga2O3 impurity phases were found in the ScGa-ZnO superlattice nanowires.

[0081] In the context of X-ray diffraction, the diffraction effect of crystal planes is significantly enhanced when the optical path difference (defined as 2dsinθ) is exactly an integer multiple of the incident X-ray wavelength (λ). This physical phenomenon satisfies the famous Bragg equation: 2dsinθ = nλ. Here, d represents the spacing between the crystal planes, θ is the angle between the incident X-ray and the crystal plane, λ is the wavelength of the X-ray, and n is the number of reflections. The Bragg equation is the key condition for X-ray diffraction within a crystal. In an X-ray diffraction pattern (XRD pattern), the horizontal axis 2θ is closely related to the interplanar spacing of the substance being measured.

[0082] Depend on Figure 9-12 It can be seen that the diffraction angles corresponding to the (002) and (110) crystal planes exhibit a slight shift after doping, with the shift angle being around 0.02°. This change directly reflects the change in the interplanar spacing of the ZnO crystal after doping, thus proving that the incorporation of the element does indeed induce lattice distortion. The lack of angle shift on the (100) crystal plane is mainly due to the significant influence of the type and concentration of the doping element on the XRD shift. Smaller dopant atoms and lower doping concentrations may cause smaller XRD shifts, which may not be sufficient to be detected.

[0083] 3. XPS Characterization

[0084] The one-dimensional ScGa3(ZnO)n superlattice nanowires prepared in Example 1 were subjected to XPS (X-ray photoelectron spectroscopy) detection, and the results are shown in FIG. Figure 13-16 .

[0085] During the data analysis, we calibrated all binding energies using the C1s of 284.8 eV as a benchmark.

[0086] Depend on Figure 13-16 It can be seen that there are Zn, O, Sc, and Ga elements in the one-dimensional ScGa3(ZnO)n superlattice nanowire. 3 / 2 and Zn-2p 1 / 2 The peaks are located at 1021.6eV and 1044.7eV respectively, with a difference of 23.1eV, which is close to the standard value of 22.97eV. The O-1s spectrum shows an asymmetric shape. After peak separation, two peaks can be obtained, located at 530.3eV and 532.1eV respectively; the peak at 530.7eV comes from O-1s in the sample, while the peak at 532.1eV comes from O-1s in CO or C=O in the air. The two Sc-2p peaks are located at 401.8eV and 406.4eV respectively, corresponding to Sc-2p 3 / 2 and Sc-2p 1 / 2 , the energy difference is 4.6eV, which is close to the standard value of 4.9eV. 3 / 2 and Ga-2p1 / 2 The peaks are at 1117.9 and 1144.8 eV, respectively, with an energy difference of 26.9 eV, which is highly consistent with the standard value of 26.9 eV. These findings reveal a certain concentration of oxygen vacancies in Sc-Ga-Zn-O nanowires. Sc and Ga were successfully introduced into the nanowires, forming Sc-O bonds and Ga-O bonds, respectively, which may have a significant impact on the physical and chemical properties of one-dimensional ScGa3(ZnO)n superlattice nanowires.

[0087] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A one-dimensional ScGa3(ZnO) n A method for preparing superlattice nanowires, characterized in that: The following steps are involved: (1) ScGa-ZnO precursor solution: dissolve the zinc source, scandium source and gallium source in an organic solvent, add a stabilizer, stir at 80-90°C for 45-70 minutes, and age at room temperature in the dark for 30-48 hours to obtain a ScGa-ZnO precursor solution; (2) ScGa-ZnO precursor solution coating ZnO nanowires: The Si substrate on which the ZnO nanowires are grown is tilted at an angle of 25-35°, and the ZnO nanowires are coated with the ScGa-ZnO precursor solution prepared in step (1) by capillary action, and then dried at 180-200°C for 25-35 minutes to obtain ScGa-ZnO precursor solution coated ZnO nanowires; (3) Heat treatment: The ScGa-ZnO precursor solution obtained in step (2) is coated with ZnO nanowires and heat treated at 1100-1200°C for 10-15 minutes to obtain one-dimensional ScGa3(ZnO) n superlattice nanowires; In step (1), the zinc source is Zn(CH3COO)2·2H2O; the scandium source is Sc(NO3)3·2H2O; and the gallium source is Ga(NO3)3·2H2O; In step (2), the ScGa-ZnO precursor solution is dropped onto the inclined Si substrate, and the coating is achieved by solution diffusion; The one-dimensional ScGa3(ZnO) n The diameter of the superlattice nanowires is 50-90nm and the length is 10-50μm; In step (1), the molar ratio of Zn, Sc and Ga in the zinc source, scandium source and gallium source is 1:1:1; In step (1), the volume ratio of the organic solvent to the stabilizer is 1000-5000:1; In step (1), the concentration of the ScGa-ZnO precursor solution is 0.002-0.05 mol / L.

2. The one-dimensional ScGa3(ZnO) according to claim 1 n A method for preparing superlattice nanowires, characterized in that: In step (3), heat treatment is performed in an air atmosphere.

3. The one-dimensional ScGa3(ZnO) according to any one of claims 1 to 2 n One-dimensional ScGa3(ZnO) prepared by the preparation method of superlattice nanowires n Superlattice nanowires.

4. The one-dimensional ScGa3(ZnO) according to claim 3 n Application of superlattice nanowires in the preparation of semiconductor materials.

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