Ion violence generator, preparation method, ion violence generating device and mask
By using 3D micro-array ion outbreak emitters with 3D micro-nano composite structures and unbalanced plasma microjets manufactured by MEMS technology in masks, combined with multi-layer sterilization layers, the existing masks are unable to effectively disinfect pathogens and cause humans to suffer from the inability to prevent pathogens. The problem of subpollution has achieved efficient air purification and facial features protection.
Patent Information
- Application Number
- CN202410151318.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-02-02
- Publication Date
- 2024-12-27
AI Technical Summary
Existing masks cannot effectively disinfect pathogens during infectious diseases, and disinfection of negative ions and ozone causes secondary pollution to the human body, making it impossible to effectively block the protection of facial features.
Using a microarray ion burst emitter with a 3D micro-nano composite structure, combined with MEMS technology to create an unbalanced plasma microjet to form a dense ion burst network, disinfect pathogens in the air through high-energy particles, and set them in the mask. The ion explosion generation device includes an electrostatic particle barrier adsorption layer, an activated carbon adsorption layer, a titanium oxide and a silver oxide bactericidal layer, and is combined with intelligent AI detection and control components to adjust the working strength.
It achieves efficient dust removal and disinfection of pathogens, reduces ozone content, improves sterilization rate, avoids damage to the human body, has ideal air flow and is light and thin, and can effectively block the protection of facial features.
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Figure CN119209208A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of disinfection and sterilization equipment, and in particular to an ion burst generator and a preparation method thereof, an ion burst generating device and a mask. Background Art
[0002] As a sanitary and epidemic prevention product, masks are generally worn on the mouth and nose to filter the air entering the mouth and nose to block harmful gases, odors, droplets, viruses and other substances.
[0003] The functional characteristics of the masks used daily to prevent and control haze, bacteria and viruses are only passive isolation, adsorption, filtration and ventilation as their main functions, but they cannot actively disinfect the bacteria and viruses adsorbed on the masks. During infectious disease outbreaks, especially when working or living in places with high virus concentrations, the negative ions and ozone disinfections commonly used by people cause secondary pollution to the environment and secondary damage to the human body. After plasma directly treats the air, the ozone content is as high as 15,000 μg / L, and the sterilization rate is only 24%, which cannot effectively remove dust and disinfect pathogens.
[0004] The search found:
[0005] The Chinese invention patent with application publication number CN113349490A discloses a two-way sterilization and purification mask with AI cavitation effect, including a mask body, an air inlet channel and an air outlet channel on the mask body, the air inlet channel is used for air to circulate from the outside of the mask body to the inside, and the air outlet channel is used for the gas in the mask body to circulate to the outside; wherein, a sterilization layer is provided in the air inlet channel for sterilizing the air entering the mask body; the air outlet channel is provided with an ultrasonic cavitation sheet, and the gas exhaled from the oral cavity and nasal cavity is sterilized and disinfected by the ultrasonic cavitation effect of the ultrasonic cavitation sheet, and then discharged to the outside of the mask. The present invention realizes effective sterilization and disinfection functions through the air inlet channel, and at the same time, it can realize the prevention and control of pathogens from the source through the air outlet channel, thereby effectively controlling the path of pathogen carriers to spread pathogens to the outside. However, the patent still has the following problems: ozone disinfection can easily cause harm to the human body, cause lesions in the body's tissue cells, and induce cancer; the open mask cannot provide closed protection for the five sense organs that are most easily invaded by pathogens. Summary of the invention
[0006] In view of the defects in the prior art, the object of the present invention is to provide an ion burst generator and a preparation method, an ion burst generating device and a mask.
[0007] According to a first aspect of the present invention, an ion burst generator is provided. The ion burst generator is a micro-array ion burst emitter having a 3D micro-nano composite structure, comprising:
[0008] A bottom electrode array structure, comprising bottom electrodes arranged in an array;
[0009] A resistance layer structure formed on the bottom electrode array structure;
[0010] An emitter array structure, formed on the resistor layer structure, comprising emitters arranged in an array, wherein the emitters are formed of nano-carbon material;
[0011] A supporting wall is provided between two adjacent bottom electrodes;
[0012] an insulating layer formed on the insulating wall;
[0013] A gate, located above the insulating layer and formed between two adjacent emitters and between the emitter and the support wall;
[0014] A focusing electrode is formed on the grid electrode corresponding to the supporting wall.
[0015] According to a second aspect of the present invention, an ion burst generating device is provided, comprising: a plurality of fins arranged in parallel and the above-mentioned ion burst generator, wherein the ion burst generator is arranged in an array on each of the fins; the ion burst generating device serves as an ultra-fine air purifier to remove dust and disinfect pathogens.
[0016] According to a third aspect of the present invention, there is provided a bidirectional barrier type disinfection mask based on ion burst, which is used for disinfection in closed and semi-closed environments, and the mask comprises:
[0017] Protective cover surface;
[0018] A ventilation channel is provided at the lower part of the protective cover surface;
[0019] The ion burst generating device is located in the ventilation channel, wherein the ion burst generating device adopts the above-mentioned ion burst generating device.
[0020] Furthermore, an electrostatic particle blocking adsorption layer, an activated carbon adsorption layer and a titanium oxide sterilization layer are sequentially arranged at the air inlet end of the ion burst generating device; a silver oxide sterilization layer is arranged at the exhalation end of the ion burst emitting device; the electrostatic particle blocking adsorption layer, the activated carbon adsorption layer, the titanium oxide sterilization layer and the silver oxide sterilization layer are all made of ultra-fine denier filament shaped fibers.
[0021] Further, one or more of the following options are included:
[0022] - the electrostatic particle blocking and adsorption layer is in a cross-shaped shape, and the fibers of the electrostatic particle blocking and adsorption layer are doped with tourmaline nanoparticles;
[0023] - The activated carbon adsorption layer is in a cross shape, and the fibers of the activated carbon adsorption layer are formed by polyacrylonitrile materials and then subjected to oxidation and carbonization treatment;
[0024] - the titanium oxide sterilization layer is Y-shaped, and the fibers of the titanium oxide sterilization layer are doped with titanium oxide nanoparticles;
[0025] - the silver oxide sterilization layer is H-shaped, and the fibers of the silver oxide sterilization layer are doped with silver oxide nanoparticles;
[0026] - The fiber cloths of the electrostatic particle blocking adsorption layer, the activated carbon adsorption layer, the titanium oxide sterilization layer and the silver oxide sterilization layer are all charged by plasma surface treatment to further improve the treatment efficiency.
[0027] Furthermore, the mask also includes an intelligent AI detection and control component, which detects the environment and adjusts the working intensity of the ion burst generating device according to the detected number of colonies and pollutant index indicators in the air, and responds to the ever-changing environment through frequency conversion.
[0028] According to a fourth aspect of the present invention, there is provided a method for preparing the above-mentioned ion burst generator, the method comprising:
[0029] providing a substrate;
[0030] forming a seed layer on the front surface of the substrate, and forming a bottom electrode array structure by photolithography;
[0031] forming a polysilicon film on the bottom electrode array structure, and forming a resistor layer structure by photolithography;
[0032] forming an emitter pattern array on the resistor layer structure by photolithography;
[0033] A nickel plate is used as an anode, an emitter patterned array is used as a cathode, and a nano-carbon material solution is used as an electroplating solution for electroplating; after the electroplating is completed, the photoresist is removed to form an emitter array structure;
[0034] Forming a support wall array structure on the emitter array structure by photolithography, and electroplating to retain the photoresist, and then sputtering a seed layer to prepare an insulating layer to form a support wall;
[0035] Sputtering a seed layer on the surface of the support wall, forming a gate patterned array by photolithography, and electroplating to retain the photoresist;
[0036] The process includes sputtering a seed layer, photolithography, and overexposure, forming a patterned array of focusing poles with an inclined cross section, and then electroplating;
[0037] The photoresist in the steps of forming the support wall array structure, the gate patterned array and the focusing pole patterned array is removed, and the microstructure is released to form an ion burst generator.
[0038] Furthermore, a seed layer is formed on the front side of the substrate, wherein the thickness of the seed layer is 1-1000 nm.
[0039] Furthermore, the bottom electrode array structure is formed by photolithography process, comprising:
[0040] Spin-coat a photoresist with a thickness of 0.5um-800um on the seed layer, and pattern the photoresist using a photolithography process to form a bottom electrode pattern array;
[0041] Au with a thickness of 500nm-10um is electroplated on the bottom electrode pattern array by using an electroplating process, the photoresist is removed, and the bottom film on the substrate is removed to form a bottom electrode array structure.
[0042] Furthermore, a polysilicon film is formed on the bottom electrode array structure, wherein: the resistivity of the polysilicon film is above 80Ωcm and the thickness is 10-200nm.
[0043] Furthermore, the nickel plate is used as the anode, the emitter patterned array is used as the cathode, and the nano-carbon material solution is used as the electroplating solution for electroplating, wherein the preparation method of the nano-carbon material solution includes:
[0044] Providing multi-walled carbon nanotubes, treating the multi-walled carbon nanotubes with molten sodium hydroxide, wherein the temperature of the molten sodium hydroxide treatment is 150-450° C. and the time is 2-6 hours; then washing with deionized water and centrifuging;
[0045] Then boil it with concentrated sulfuric acid;
[0046] Then, the mixture is washed with deionized water until it becomes neutral, and separated by natural sedimentation to obtain the treated multi-walled carbon nanotubes;
[0047] The treated multi-walled carbon nanotubes are added into the electroplating solution according to a preset concentration and ultrasonically treated to obtain a nano-carbon material solution.
[0048] An ion burst is a high-energy explosion at the micro-nano scale produced by a non-equilibrium plasma jet (which can be understood as a micro-nano scale solar burst). It forms non-equilibrium plasma active particles in the air. The charged particles generated in the process are mixed with the air to be treated, which kills harmful microorganisms, effectively degrades toxic and harmful gases, promotes the coagulation of particulate matter, and improves air quality. It is the most cutting-edge and effective way of air purification and disinfection today.
[0049] Ion burst is a high-energy physical and chemical reaction at the micro-nano scale. It forms chemically active particles through the bombardment of air by high-speed charged particles. Experimental results show that the ozone content after ion burst treatment is only 362μg / L, and the sterilization rate is as high as 95%. Due to the fluidity of ion burst, the generated charged particles can be fully mixed with microorganisms in the air, which can not only improve the sterilization efficiency, but also dilute the ozone content and block the transmission of viruses.
[0050] Compared with the prior art, the present invention has at least one of the following beneficial effects:
[0051] 1. The present invention adopts micro-nano cross-scale technology and multi-integrated MEMS technology to process and prepare ion burst generator units. This processing technology implants nano-carbon materials such as carbon nanotubes or carbon fibers on the emission substrate, which can effectively enhance the emission capability and reduce the emission voltage and power consumption; MEMS technology is used to manufacture an array of non-equilibrium plasma micro-ejectors, which can form a dense ion burst network. While achieving two-way barrier sterilization, it can also break the chemical molecular structure of toxic and harmful gases in the air through high-energy particles, thereby effectively degrading the harm of toxic and harmful gases in the air to the human body. Compared with traditional barrier filtration, it has very ideal air fluidity, and the use of this mask will not produce the feeling of suffocation; and it has the advantages of being light, small and thin.
[0052] 2. The present invention sets an array wing-row non-equilibrium ion burst generating device based on ion burst in the ventilation channel of the disinfection mask, which can effectively remove dust and disinfect pathogens, thereby effectively controlling the transmission path of pathogens. BRIEF DESCRIPTION OF THE DRAWINGS
[0053] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings:
[0054] Figure 1 It is a structural schematic diagram of an ion burst generator according to an embodiment of the present invention;
[0055] Figure 2 Schematic diagram of the structure of an ion burst generator according to an embodiment of the present invention, wherein (A) is a main view schematic diagram, and (B) is a 3D schematic diagram;
[0056] Figure 3 The electron microscope characterization result of the ion burst generator of one embodiment of the present invention is shown in FIG. Figure 1 ;
[0057] Figure 4 The electron microscope characterization result of the ion burst generator of one embodiment of the present invention is shown in FIG. Figure 2 ;
[0058] Figure 5This is a graph showing electron microscope characterization results of an emitter array in an ion burst generator according to an embodiment of the present invention;
[0059] Figure 6 It is a structural schematic diagram of an ion burst generating device according to an embodiment of the present invention;
[0060] Figure 7 It is a schematic structural diagram of a fin row piece according to an embodiment of the present invention;
[0061] Figure 8 This is a schematic structural diagram of a two-way barrier type disinfection mask based on ion burst according to an embodiment of the present invention;
[0062] Fig. 9 This is a schematic diagram of the structure of an ion burst generating device according to an embodiment of the present invention, including an air intake passage and an exhalation end;
[0063] Fig.10 It is a schematic structural diagram corresponding to each step in a method for preparing an ion burst generator according to an embodiment of the present invention;
[0064] Fig.11 A schematic diagram of a process for preparing an ion burst generator according to an embodiment of the present invention;
[0065] In the figure: 1 is a binding strap, 2 is a temperature difference energy harvester, 3 is an air quality detection sensor, 4 is a radio frequency energy harvester, 5 is a sealing belt, 6 is a protective cover surface, 7 is a volatile sterilization module, 8 is an interactive module, 9 is a pathogen detection component, 10 is an ion burst generating device, 11 is a respiratory energy harvester, 12 is a wing row, 15 is an ion burst generator, 151 is a substrate, 152 is a bottom electrode array structure, 153 is a resistor layer structure, 154 is an emitter array structure, 155 is a supporting wall, 156 is an insulating layer, 157 is a gate, 158 is a focusing electrode, 16 is a silver oxide sterilization layer, 17 is a solar photovoltaic film, 18 is a titanium oxide sterilization layer, 19 is an activated carbon adsorption layer, and 20 is an electrostatic particle blocking adsorption layer. DETAILED DESCRIPTION
[0066] The present invention is described in detail below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the present invention, but are not intended to limit the present invention in any form. It should be noted that, for those of ordinary skill in the art, several variations and improvements may be made without departing from the concept of the present invention. These all belong to the protection scope of the present invention.
[0067] An embodiment of the present invention provides an ion burst generator, referring to Figure 1-2The ion burst generator is a micro-array ion burst emitter with a 3D micro-nano composite structure. The ion burst generator includes a bottom electrode array structure 152, a resistor layer structure 153, an emitter array structure 154, a support wall 155, an insulating layer 156, a gate 157 and a focusing electrode 158, wherein: the bottom electrode array structure 152 includes bottom electrodes arranged in an array; the resistor layer structure 153 is formed on the bottom electrode array structure 152; the emitter array structure 154 is formed on the resistor layer structure 153, and includes emitters arranged in an array, and the emitters are formed of nano-carbon materials; the support wall 155 is provided Between two adjacent bottom electrodes, the supporting wall 155 mainly functions to form a spatial distance between the emitter and the gate 157, and secondly to block the interference between the two units; the insulating layer 156 is formed on the insulating wall, and the insulating layer 156 is a functional layer provided to prevent the emitter and the gate 157 from breakdown under high voltage; the gate 157 is located above the insulating layer 156, and is formed between two adjacent emitters and between the emitter and the supporting wall 155; the focusing electrode 158 is formed on the gate 157 corresponding to the supporting wall 155, and the focusing electrode 158 is used to focus and enhance the ion burst.
[0068] In the above embodiment, the bottom electrode array structure 152, the resistor layer structure 153, and the emitter array structure 154 form a plasma barrier discharge structure, which is an integral ion burst emitter (cathode) structure. Voltage is applied to the ion burst emitter (cathode) and the gate 157 (anode) to induce the emission of the ion burst. The anode is non-contact, so that the electrons overflowing from the cathode surface can be accelerated and fly in a directed manner.
[0069] In the above-mentioned ion burst generator, the bottom electrode array structure 152, the resistor layer structure 153, and the emitter array structure 154 are ion burst emitters, and the emitter array structure 154 is an emitter-cathode planted with nanocarbon materials in a metal body. When a certain voltage is applied to the gate 157 (anode), a certain potential barrier is formed on the surface of the ion burst emitter; as the electric field continues to increase, the width of the potential barrier continues to decrease, and finally free electrons overflow, and form a quantum effect by "tunneling" through the potential barrier. After high-speed and high-energy electrons are released from the tips of metal-based carbon nanotubes, they collide with the air to form an ion burst. Since the direction of ion burst emission is perpendicular to the inlet and outlet air flow, the high-density ion burst perpendicular to the air flow acts on the air, achieving the effect of two-way barrier sterilization, efficient dust removal and pathogen elimination.
[0070] In the above embodiment, the emitter array structure 154 is formed of nano-carbon materials such as carbon nanotubes or carbon fibers. Figure 3-5, an array of non-equilibrium ion burst generators is prepared using micro-nano cross-scale technology and multi-integrated MEMS technology, and carbon nanotubes are implanted on the emission substrate, which can effectively enhance the emission capability and reduce the emission voltage and power consumption.
[0071] Another embodiment of the present invention provides an ion burst generating device, referring to Figure 6-7 The ion burst generating device 10 includes: a plurality of fin rows 12 arranged in parallel and the above-mentioned ion burst generator 15, wherein the ion burst generator 15 is arranged in an array on each fin row 12; the ion burst generating device 10 serves as an ultra-fine air purifier to remove dust and disinfect pathogens.
[0072] Another embodiment of the present invention also provides a two-way barrier disinfection mask based on ion burst, which is used for disinfection in closed and semi-closed environments. The closed and semi-closed environments (disinfection scenes) include cars, ICU wards, office buildings using central air conditioning, etc.; refer to Figure 8-9 The mask includes a protective mask surface 6, a ventilation channel and an ion burst generating device 10, wherein: the protective mask surface 6 is attached to the human face and is a closed structure, and a sealing belt 5 is provided along the outer periphery of the protective mask surface 6, preferably, the sealing belt 5 is a sealing belt embedded with LED latex; straps 1 are connected to both sides of the protective mask surface 6, preferably, the straps 1 have energy storage and retractable functions; the ventilation channel is arranged at the lower part of the protective mask surface 6, specifically, the ventilation channel is arranged at the exhalation valve of the protective mask surface 6; the ion burst generating device 10 adopts the above-mentioned ion burst generating device, which is a flat wing row type, and each wing row piece 12 has an array of non-equilibrium ion burst generators 15 prepared based on MEMS technology, and the ion burst generating device 10 is located in the ventilation channel, as an ultra-micro air purifier, it plays the role of dust removal and pathogen elimination. While achieving two-way blocking, the disinfection mask can also break the chemical molecular structure of toxic and harmful gases in the air (such as common formaldehyde in life, and sarin gas in biological and chemical weapons) through high-energy particles, thereby effectively degrading the harm of toxic and harmful gases in the air to the human body and playing a role in preventing biological and chemical attacks. Since the array of non-equilibrium plasma micro-jets is manufactured using MEMS technology, it can form a dense ion burst network. Compared with traditional barrier filtration, it has very ideal air fluidity, and using this mask will not cause the feeling of suffocation.
[0073] In the above embodiment, the ion burst is formed by an array wing-row non-equilibrium plasma jet (ion burst generating device 10), which can generate ultraviolet rays (UV), charged particles (electrons, positive and negative ions, etc.), chemically active particles (ROS and RNS, etc.) and particles in excited and metastable states, etc. Reactive oxygen particles (ROS) play an important role when acting on organisms. Oxygen atoms and oxygen-containing active particles (O, OH, HO, etc.) play a major role in the sterilization process. When the oxygen content is increased, the sterilization effect will be greatly improved. When there are water molecules in the air, the plasma will produce a certain amount of OH. OH has a high activity and may also play an important role when it acts on organisms.
[0074] It should be noted that the oxygen atoms and oxygen-containing active particles in the ion burst can be understood as ionized oxygen, not ozone. The ion burst generating device 10 is placed at the ventilation port (exhalation valve) of the mask body. Figure 6 Air enters through the device, and human exhaled air also passes through the device. Since the exhaled air of the human body contains a large amount of water, water molecules will produce a certain amount of -OH (hydroxyl) under the action of plasma. When -OH encounters +H on the viral RNA, a simple biochemical reaction - dehydration reaction will occur. This reaction takes precedence over the synthesis of ribose phosphate based on the base on the viral RNA, making the virus lose its replication and reproduction function, thereby effectively inhibiting the production of ozone and further improving the killing efficiency of pathogens. The ion burst generated by the above-mentioned ion burst generating device 10 has good inactivation ability for various pathogens (Gram-negative bacteria, Gram-positive bacteria, bacterial spores, bacterial biofilms, fungi, etc.).
[0075] In some embodiments, reference Fig. 9, an electrostatic particle blocking adsorption layer 20, an activated carbon adsorption layer 19 and a titanium oxide sterilization layer 18 are arranged in sequence at the air inlet passage end (outside, i.e., the air inlet passage end) of the ion burst generator 10; a silver oxide sterilization layer 16 is arranged at the exhalation end of the ion burst emitter, thereby achieving a multiple protection and isolation effect. When the micro ion burst emitter is working, ultraviolet rays are generated. The silver oxide sterilization layer 16 and the titanium oxide sterilization layer 18 attached to both sides of the ion burst generator 10 have the effects of sterilization and preventing ultraviolet rays from leaking. The electrostatic particle blocking adsorption layer 20, the activated carbon adsorption layer 19, the titanium oxide sterilization layer 18 and the silver oxide sterilization layer 16 are all made of ultra-fine denier filament shaped fibers, and the fibers contain porous structures inside, so they have the characteristics of large surface area, lightness, good barrier effect, and smooth airflow. Along with the effect of partial ion burst in the ion burst generator 10, the harmful substances treated in the four layers of protective functional fiber cloth have secondary degradation and desorption functions. The electrostatic particle blocking adsorption layer 20 is in the shape of a cross, and the fibers of the electrostatic particle blocking adsorption layer 20 are doped with tourmaline nanoparticles; the activated carbon adsorption layer 19 is in the shape of a cross, and the fibers of the activated carbon adsorption layer 19 are formed by polyacrylonitrile materials and then oxidized and carbonized; the titanium oxide sterilization layer 18 is in the shape of a Y, and the fibers of the titanium oxide sterilization layer 18 are doped with titanium oxide nanoparticles; the silver oxide sterilization layer 16 is in the shape of an H, and the fibers of the silver oxide sterilization layer 16 are doped with silver oxide nanoparticles; the fiber cloths of the electrostatic particle blocking adsorption layer 20, the activated carbon adsorption layer 19, the titanium oxide sterilization layer 18, and the silver oxide sterilization layer 16 are all charged by plasma surface treatment to further improve the treatment efficiency. Under normal circumstances, the ion burst generator 10 alone can play a two-way purification role. In the case of power failure, the multi-layer protective layer arranged on the outside of the ion burst generator 10 can effectively protect, so that the mask maintains a two-way blocking effect.
[0076] The disinfection mask in the above embodiment has the ability to completely block the human body's five senses from the outside air. The ventilation channel is provided with an array wing-row non-equilibrium ion burst generating device based on ion burst. The ion burst generator 15 is an ultra-micro air purifier with the functions of dust removal and pathogen elimination. It is prepared using MEMS technology and has the characteristics of being light, small and thin. Preferably, the protective cover surface 6 adopts a fully transparent, full-viewing, explosion-proof, fog-proof and radiation-proof design. The mask can be used as a hat in places with good environmental conditions. The overall structure of the mask is simple and light, with good protection, and will not produce irritating odors of ozone and negative ions.
[0077] In some embodiments, the disinfection mask also includes an intelligent AI detection and control component disposed on the protective mask surface 6, which detects the environment and adjusts the working intensity of the ion burst generating device according to the detected colony count and the pollutant index index in the air, and responds to the ever-changing environment through frequency conversion. Preferably, the intelligent AI detection and control component includes a pathogen detection component 9 and an interactive module 8 disposed on the outer surface of the protective mask surface 6, wherein the pathogen detection component 9 uses a quantum dot marking detection component for detecting pathogens; the interactive module 8 sends the detection data of the pathogen detection component 9 to the terminal via wireless communication. Specifically, the pathogen detection component 9 transmits the data to the remote intelligent AI analysis system through the wireless two-way interaction of the interactive module 8 to determine the status of the pathogens in the environment, thereby effectively adjusting the working frequency of sterilization.
[0078] In some embodiments, a self-powered component is provided on the protective cover surface 6, so that the mask can work in a wireless self-powered manner. The self-powered component includes a capacitor energy storage layer, which is used to store electrical energy; the capacitor energy storage layer is provided in the strap 1 of the cover body, and the capacitor energy storage layer includes two layers of high dielectric constant insulating layers and a layer of nano-metal film energy storage layer, and the nano-metal film energy storage layer is sandwiched between the two layers of high dielectric constant insulating layers, that is, one surface of the nano-metal film energy storage layer is bonded to one surface of one of the high dielectric constant insulating layers, and the other surface of the nano-metal film energy storage layer is bonded to one surface of the other high dielectric constant insulating layer.
[0079] In some embodiments, a solar photovoltaic film 17 is provided below the sealing belt 5 corresponding to the part where the protective mask surface 6 contacts the forehead. Preferably, the solar photovoltaic film 17 is configured as a built-in retractable roller blind, which can block the sun and charge the mask body when pulled down. An energy harvester is provided on the protective mask surface 6 for collecting external energy and converting it into electrical energy. Preferably, the energy harvester includes any one or more of a solar energy harvester, a temperature difference energy harvester, a respiratory energy harvester, and a radio frequency energy harvester, such as Figure 8 The temperature difference energy harvester 2 and the radio frequency energy harvester 4 are located between the forehead sealing belt 5 and the solar photovoltaic film 17, and the breathing energy harvester 11 is located at the lower part of the protective cover surface 6; the capacitor energy storage layer is used to store the electrical energy generated by the energy harvester.
[0080] In some embodiments, a volatile sterilization module 7 and an air quality detection sensor 3 are further provided on the outer side of the mask surface between the forehead sealing band 5 and the solar photovoltaic film 17, wherein the volatile sterilization module 7 serves as an air disinfection component used in the event of a power outage, and the air quality detection sensor 3 is used to detect toxic and harmful gases in the air.
[0081] In the above-mentioned embodiment of the present invention, an array wing-row non-equilibrium ion burst generating device based on ion burst is arranged in the ventilation channel of the disinfection mask, which can effectively remove dust and disinfect pathogens, thereby effectively controlling the transmission path of pathogens; the mask body has the characteristics of being light, small and soft, fully barrier, intelligent, and multi-purpose. Under normal circumstances, only one five-sense mask is needed for effective protection, which greatly reduces the cost of protection and can prevent heatstroke when wearing protective clothing.
[0082] Another embodiment of the present invention further provides a method for preparing the above-mentioned ion burst generator, referring to Figure 10-11 , including the following steps:
[0083] S1, providing a substrate 151;
[0084] S2, forming a seed layer on the front surface of the substrate 151, and forming a bottom electrode array structure 152 by photolithography, such as Fig.11 (a)
[0085] S3, forming a polysilicon film on the bottom electrode array structure 152, and forming a resistor layer structure 153 by photolithography, such as Fig.11 (b)
[0086] S4, forming a patterned emitter array of nano-carbon material on the resistor layer structure 153 by photolithography;
[0087] S5, using a nickel plate as an anode and an emitter patterned array as a cathode, and using a nano-carbon material solution as an electroplating solution for electroplating, wherein the nano-carbon material includes carbon nanotubes and carbon fibers; after the electroplating is completed, the substrate 151 is removed from the electroplating solution and cleaned with deionized water, the photoresist is removed, and the seed layer in step S2 is removed to form an emitter array structure 154, such as Fig.11 (c) as shown; it should be noted that the seed layer removed is the seed layer outside the device after patterning, so that the unit structure is independent;
[0088] S6, forming a support wall array structure on the emitter array structure 154 by photolithography, and electroplating Ni, retaining the photoresist, and then sputtering a seed layer to prepare an insulating layer 156, and finally forming a complete support wall 155, such as Fig.11 (d)
[0089] S7, sputtering a seed layer on the surface of the support wall 155, forming a gate pattern array by photolithography, and electroplating Ni, retaining the photoresist, such as Fig.11 (e)
[0090] S8, after sputtering seed layer, photolithography, overexposure process, forming a focus electrode patterned array with inclined cross section, and electroplating Ni, such as Fig.11 (f)
[0091] S9, removing the photoresist in the steps of forming the support wall array structure, the gate pattern array and the focusing pole pattern array, and releasing the microstructure to form an ion burst generator, such as Fig.11 (g) as shown.
[0092] In some embodiments, in step S1, the substrate 151 can be a glass substrate, and a bottom film is formed on the glass substrate. Specifically, the bottom film is formed by sputtering a composite metal bonding layer (Cr+Cu) on the glass substrate. At the same time, the bottom film is used as a conductive layer during electroplating and will be removed when the device is prepared. In step S2, after cleaning the substrate 151, an alloy seed layer is deposited on it. Due to the different thermal expansion coefficients, stress mismatch will be formed when various materials are bonded together. The seed layer is to eliminate the stress mismatch of different materials and form a bonding layer that makes different materials tightly bonded. Preferably, the thickness of the deposited seed layer is 1-1000nm, and more preferably, it is 1-2000nm. The bottom electrode array structure 152 is formed by photolithography process, including the following steps:
[0093] S21, spin-coating a photoresist with a thickness of 0.5 um-800 um on the seed layer, preferably, the thickness of the photoresist is 2 μm, and patterning the photoresist by a photolithography process to form a bottom electrode pattern array;
[0094] S22, using an electroplating process to electroplate Au with a thickness of 500nm-10um on the patterned bottom electrode pattern array, preferably, the thickness of Au is 1μm, remove the photoresist, and remove the bottom film on the substrate 151 to form a bottom electrode array structure 152.
[0095] In the above embodiments, since Au is very soft, the stress mismatch between different material layers can be eliminated; secondly, it is easy to diffuse into other materials to form a eutectic structure and thus form a strong and stable transition zone; thirdly, Au has excellent conductivity; fourthly, Au has the advantage of diverse preparation processes.
[0096] In some embodiments, in step S3, the resistivity of the polysilicon film is above 80Ωcm, preferably 100Ωcm, and the thickness is 10-200nm, preferably 50nm, so as to prevent the electrode from being broken down when high voltage is applied. The resistive layer pattern is formed by spin coating photoresist and photolithography patterning process, the photoresist thickness is 2μm, and the polysilicon film not protected by the photoresist mask is etched by reactive ion etching, and the photoresist is removed to form the final resistive layer structure 153.
[0097] In some embodiments, in step S4, a carbon nanotube or carbon fiber emitter patterned array is formed by spin coating photoresist and photolithography patterning process with a photoresist thickness of 2 μm.
[0098] In some embodiments, in step S5, the method for preparing the nano-carbon material solution comprises:
[0099] S51, providing multi-walled carbon nanotubes, wherein the average diameter of the multi-walled carbon nanotubes is 1-100 nm, preferably 50 nm, and the average length is 100 nm-500 um, preferably 15 μm, and treating the multi-walled carbon nanotubes with molten sodium hydroxide, wherein the temperature of the molten sodium hydroxide treatment is 150-450° C., and the time is 2-6 hours; preferably, the temperature of the molten sodium hydroxide treatment is 300° C., and the time is 4 hours, and then washing with deionized water and centrifuging; since carbon nanotubes are very easy to agglomerate, using the above multi-walled carbon nanotubes can, on the one hand, make the carbon nanotubes uniformly dispersed in the electroplating solution, and on the other hand, make the multi-walled carbon nanotubes further purified;
[0100] S52, followed by boiling with concentrated sulfuric acid for 20 hours;
[0101] S53, washing with deionized water until neutral, and separating by natural sedimentation to obtain treated multi-walled carbon nanotubes;
[0102] S54, adding the treated multi-walled carbon nanotubes into a plating solution, such as a Ni electroplating solution, at a preset concentration such as 5 g / L, and ultrasonically treating for 3 hours to obtain a multi-walled carbon nanotube solution, i.e., a nanocarbon material solution.
[0103] In some other embodiments, carbon fibers may be used to prepare a nano-carbon material solution, which can also achieve the purpose of implanting the nano-carbon material on the emission substrate.
[0104] In some embodiments, in step S6, a support wall array structure is formed by spin coating photoresist and photolithography patterning process with a photoresist thickness of 10 μm, and Ni is electroplated with a thickness of 10 μm using an electroplating process. The photoresist is retained and CMP (chemical mechanical polishing) is used to smooth the surface, thereby forming a support wall 155.
[0105] In some embodiments, in step S7, the sputtering seed layer process in step S2 is repeated on the above-mentioned polished support wall metal and photoresist surface, and the spin coating photoresist and photolithography patterning process in step S2 are repeated, the photoresist thickness is 5 μm, and a gate patterned array (control gate patterned array) is formed, and Ni is electroplated by an electroplating process with a thickness of 2 μm, the photoresist is retained, and CMP (chemical mechanical polishing) is used to smooth the surface.
[0106] In some embodiments, in step S8, a seed layer sputtering process, a photoresist spin coating process, and a photolithography patterning process are sequentially performed, wherein the photoresist thickness is 30 μm, an overexposure process is used to form a focusing pole patterned array with an inclined cross-section, and Ni is electroplated with a thickness of 30 μm using an electroplating process.
[0107] In some embodiments, in step S9, the photoresist sacrificial layer retained in steps S6, S7 and S8 is dissolved by immersion in acetone and ethanol in sequence, assisted by electromagnetic stirring, and the microstructure is released to finally form a micro ion burst emitter array structure having a 3D micro-nano composite structure including a bottom electrode array structure 152, a resistor layer structure 153, an emitter array structure 154, a gate 157, a support wall 155, an insulating layer 156, and a focusing electrode 158.
[0108] In the above embodiment, the jet ion burst uses active particles in the air as the disinfection source, and the ozone content can be effectively controlled at the ppb level, which is not easy to cause adverse reactions. Since the disinfection mask is a closed structure attached to the human face, soldiers and medical staff only need to wear this mask to play a comprehensive protection role, without wearing other protective equipment.
[0109] The above-mentioned embodiment of the present invention adopts micro-nano cross-scale process and multi-integrated MEMS process to prepare the ion burst generator unit. This processing technology implants nano-carbon materials such as carbon nanotubes or carbon fibers on the emission substrate, which can effectively enhance the emission capability and reduce the emission voltage and power consumption; MEMS technology is used to manufacture an array of unbalanced plasma micro-jets, which can form a dense ion burst network. While achieving two-way barrier sterilization, it has very ideal air fluidity compared to traditional barrier filtration, and the use of this mask will not produce the feeling of suffocation; and it has the advantages of being light, small and thin.
[0110] The above describes the specific embodiments of the present invention. It should be understood that the present invention is not limited to the above specific embodiments, and those skilled in the art can make various modifications or variations within the scope of the claims, which does not affect the essence of the present invention. The above preferred features can be used in any combination without conflicting with each other.
Claims
1. An ion burst generator, characterized in that: The ion burst generator is a micro-array ion burst emitter with a 3D micro-nano composite structure, comprising: A bottom electrode array structure, comprising bottom electrodes arranged in an array; A resistor layer structure formed on the bottom electrode array structure; An emitter array structure, formed on the resistor layer structure, comprising emitters arranged in an array, wherein the emitters are formed of nano-carbon material; A supporting wall is provided between two adjacent bottom electrodes; an insulating layer formed on the insulating wall; A gate, located above the insulating layer and formed between two adjacent emitters and between the emitter and the support wall; A focusing electrode is formed on the grid electrode corresponding to the supporting wall.
2. An ion burst generating device, characterized in that: include: A plurality of parallel arranged fin rows and the ion burst generator as claimed in claim 1, wherein the ion burst generator is arranged in an array on each of the fin rows; the ion burst generating device acts as an ultra-micro air purifier to remove dust and disinfect pathogens.
3. A two-way barrier disinfection mask based on ion burst, characterized in that: Used for disinfection in closed and semi-closed environments, including: Protective cover surface; A ventilation channel is provided at the lower part of the protective cover surface; An ion burst generating device is located in the ventilation channel, wherein the ion burst generating device adopts the ion burst generating device described in claim 2.
4. The two-way barrier disinfection mask based on ion burst according to claim 3 is characterized in that: An electrostatic particle blocking adsorption layer, an activated carbon adsorption layer and a titanium oxide sterilization layer are sequentially arranged at the air inlet end of the ion burst generating device; a silver oxide sterilization layer is arranged at the exhalation end of the ion burst emitting device; The electrostatic particle blocking adsorption layer, the activated carbon adsorption layer, the titanium oxide sterilization layer and the silver oxide sterilization layer are all prepared by ultra-fine denier filament special-shaped fibers.
5. The two-way barrier disinfection mask based on ion burst according to claim 4 is characterized in that: Include one or more of the following options: - the electrostatic particle blocking and adsorption layer is in a cross-shaped shape, and the fibers of the electrostatic particle blocking and adsorption layer are doped with tourmaline nanoparticles; - The activated carbon adsorption layer is in a cross shape, and the fibers of the activated carbon adsorption layer are formed by polyacrylonitrile materials and then subjected to oxidation and carbonization treatment; - the titanium oxide sterilization layer is Y-shaped, and the fibers of the titanium oxide sterilization layer are doped with titanium oxide nanoparticles; - the silver oxide sterilization layer is H-shaped, and the fibers of the silver oxide sterilization layer are doped with silver oxide nanoparticles; - The fiber cloths of the electrostatic particle blocking adsorption layer, the activated carbon adsorption layer, the titanium oxide sterilization layer and the silver oxide sterilization layer are all charged by plasma surface treatment to further improve the treatment efficiency.
6. The two-way barrier disinfection mask based on ion burst according to claim 3 is characterized in that: It also includes an intelligent AI detection and control component, which detects the environment and adjusts the working intensity of the ion burst generating device according to the detected number of colonies and the pollutant index in the air, so as to cope with the ever-changing environment through frequency conversion.
7. A method for preparing the ion burst generator according to claim 1, characterized in that: include: providing a substrate; forming a seed layer on the front surface of the substrate, and forming a bottom electrode array structure by photolithography; forming a polysilicon film on the bottom electrode array structure, and forming a resistor layer structure by photolithography; forming an emitter pattern array on the resistor layer structure by photolithography; A nickel plate is used as an anode, an emitter patterned array is used as a cathode, and a nano-carbon material solution is used as an electroplating solution for electroplating; after the electroplating is completed, the photoresist is removed to form an emitter array structure; Forming a support wall array structure on the emitter array structure by photolithography, and electroplating to retain the photoresist, and then sputtering a seed layer to prepare an insulating layer to form a support wall; Sputtering a seed layer on the surface of the support wall, forming a gate patterned array by photolithography, and electroplating to retain the photoresist; The process includes sputtering a seed layer, photolithography, and overexposure, forming a patterned array of focusing poles with an inclined cross section, and then electroplating; The photoresist in the steps of forming the support wall array structure, the gate patterned array and the focusing pole patterned array is removed, and the microstructure is released to form an ion burst generator.
8. The method for preparing the ion burst generator according to claim 7, characterized in that: One or more of the following options: - forming a seed layer on the front side of the substrate, wherein the thickness of the seed layer is 1-1000 nm; - forming a polysilicon film on the bottom electrode array structure, wherein: the resistivity of the polysilicon film is above 80Ωcm and the thickness is 10-200nm.
9. The method for preparing an ion burst generator according to claim 7, characterized in that: The bottom electrode array structure is formed by photolithography process, comprising: Spin-coat a photoresist with a thickness of 0.5um-800um on the seed layer, and pattern the photoresist using a photolithography process to form a bottom electrode pattern array; Au with a thickness of 500nm-10um is electroplated on the bottom electrode pattern array by using an electroplating process, the photoresist is removed, and the bottom film on the substrate is removed to form a bottom electrode array structure.
10. The method for preparing an ion burst generator according to claim 7, characterized in that: The nickel plate is used as the anode, the emitter patterned array is used as the cathode, and the nano-carbon material solution is used as the electroplating solution for electroplating, wherein the preparation method of the nano-carbon material solution includes: Providing multi-walled carbon nanotubes, treating the multi-walled carbon nanotubes with molten sodium hydroxide, wherein the temperature of the molten sodium hydroxide treatment is 150-450° C. and the time is 2-6 hours; then washing with deionized water and centrifuging; Then boil it with concentrated sulfuric acid; Then, the mixture is washed with deionized water until it becomes neutral, and separated by natural sedimentation to obtain the treated multi-walled carbon nanotubes; The treated multi-walled carbon nanotubes are added into the electroplating solution according to a preset concentration and ultrasonically treated to obtain a nano-carbon material solution.
Citation Information
Patent Citations
Bidirectional sterilization and purification mask with AI cavitation effect
CN113349490A
