Radio frequency front-end circuit for solving problem of wide voltage domain of radio frequency module and radio frequency module

Abstract

The invention relates to the technical field of radio frequency, and particularly discloses a radio frequency front-end circuit for solving the problem of a wide voltage domain of a radio frequency module and the radio frequency module, and the radio frequency front-end circuit comprises an internal power supply generation circuit, a mobile industry processor interface digital module and a control circuit. Wherein the power supply end of the internal power supply generation circuit and the power supply end of the mobile industry processor interface digital module are both connected with a digital interface voltage power supply of the equipment, so that an analog voltage power supply does not enter a radio frequency front-end module chip and is not influenced by the magnitude of the output voltage of the analog voltage power supply of the equipment; the voltage domain range of the digital interface voltage power supply is relatively narrow, so that an internal power supply generation circuit does not need to be designed for each narrow voltage domain or a complicated internal power supply generation circuit does not need to be designed for a wide voltage domain, and the wide voltage domain of the equipment can be adapted; therefore, the problem that the radio frequency front-end module chip adapts to the wide voltage domain of the equipment where the radio frequency front-end module chip is located can be solved under the condition of avoiding greatly increasing the cost.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency front-end circuit and a radio frequency module for solving the problem of wide voltage domain of radio frequency modules. Background Art

[0002] With the increasing popularity of 5G smartphones and the advancement of large-scale construction of 5G base stations, the RF front-end market is showing a rapid growth trend. While the RF front-end market is growing rapidly, it is also facing many challenges. Usually, the external power supply voltage range used in RF front-end module chips is relatively wide, so the voltage processing circuit inside the chip is required to be capable of a wider voltage range (for example, 1.65V-5V). The voltage processing circuit inside the chip usually uses a linear voltage regulator circuit to solve this problem, but the processing methods in related technologies make it difficult to achieve a regulated output of a wide voltage domain of the RF front-end circuit without greatly increasing costs.

[0003] Figure 1 The figure is a schematic diagram of the structure of a radio frequency front-end circuit in a related technology.

[0004] like Figure 1 As shown, the RF front-end module chip is usually connected to the analog voltage power supply (the internal working voltage VDD of the device provided by an external power supply) 101 of the device to power the existing internal power generation circuit 103 in the RF front-end module chip, and the existing internal power generation circuit 103 powers the control circuit 104 for generating a bias voltage signal at the front end of the RF switch circuit 105 of the RF front-end module chip; at the same time, the digital interface voltage power supply (VIO) 102 of the device is used to power the mobile industry processor interface (MIPI) digital module 106 for controlling the switching state of the RF switch circuit 105.

[0005] However, as the voltage domain of the external power supply provided by the device where the RF front-end module chip is located gradually becomes wider, the existing internal power supply generation circuit 103 of the RF front-end module chip cannot adapt. Therefore, the relevant technology provides two solutions. The first solution is to set the existing internal power supply generation circuit 103 for the voltage range of the device. For example, the first existing internal power supply generation circuit 103 is designed for the voltage domain of 1.8V-3.6V, the second existing internal power supply generation circuit 103 is designed for the voltage domain of 2.4V-3.3V, and the third existing internal power supply generation circuit 103 is designed for the voltage domain of 2.4V-5V. The first solution is obviously unable to adapt to the situation where the voltage domain of the device is wide, and greatly increases the cumbersomeness of chip development. The second solution is to design a complex existing internal power supply generation circuit 103 to adapt to the external voltage of the wide voltage domain provided by the device. Although it can adapt to the situation where the voltage domain of the device is wide, this not only increases the additional design cost, but also the stability of the complex circuit structure needs to spend more time to verify, which seriously hinders the speed of product formation.

[0006] How to solve the problem of RF front-end module chips adapting to the wide voltage domain of the device in which they are located without significantly increasing costs is a technical problem that technical personnel in this field need to solve. Summary of the invention

[0007] The purpose of this application is to provide a radio frequency front-end circuit and a radio frequency module that solve the problem of wide voltage domain of the radio frequency module, which can solve the problem of the radio frequency front-end module chip adapting to the wide voltage domain of the device in which it is located without significantly increasing costs.

[0008] In order to solve the above technical problems, the present application provides a radio frequency front-end circuit that solves the wide voltage domain problem of the radio frequency module, including: an internal power generation circuit, a mobile industry processor interface digital module and a control circuit;

[0009] Among them, the power supply end of the internal power supply generating circuit and the power supply end of the mobile industry processor interface digital module are both connected to the digital interface voltage power supply of the device, the power output end of the internal power supply generating circuit is connected to the power supply end of the control circuit, the output end of the control circuit is connected to the voltage bias input end of the RF switching circuit, and the output end of the mobile industry processor interface digital module is connected to the switch control end of the RF switching circuit.

[0010] Optionally, the internal power generation circuit specifically includes a bandgap reference circuit and a voltage stabilization circuit;

[0011] The power supply end of the bandgap reference circuit and the power supply end of the voltage stabilizing circuit are both connected to the digital interface voltage power supply, the reference voltage output end of the bandgap reference circuit is connected to the reference voltage input end of the voltage stabilizing circuit, and the voltage stabilizing output end of the voltage stabilizing circuit is connected to the power supply end of the control circuit.

[0012] Optionally, the bandgap reference circuit specifically includes: a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a first operational amplifier, a first resistor, a second resistor, a first diode, a second diode and a third diode;

[0013] The source of the first PMOS tube, the source of the second PMOS tube, and the source of the third PMOS tube are all connected to the digital interface voltage power supply, the drain of the first PMOS tube and the anode of the first diode are connected to the inverting input terminal of the first operational amplifier, the drain of the second PMOS tube and the first end of the first resistor are connected to the non-inverting input terminal of the first operational amplifier, the second end of the first resistor is connected to the anode of the second diode, the gate of the first PMOS tube, the gate of the second PMOS tube, and the output terminal of the first operational amplifier are connected to the gate of the third PMOS tube, the drain of the third PMOS tube and the first end of the second resistor are connected to the reference voltage output terminal of the bandgap reference circuit, the second end of the second resistor is connected to the anode of the third diode, and the cathodes of the first diode, the second diode, and the third diode are grounded.

[0014] Optionally, the voltage stabilizing circuit is specifically a low voltage dropout linear regulator;

[0015] The low voltage difference linear regulator specifically includes: a fourth PMOS tube, a fifth NMOS tube, a second operational amplifier, a third resistor and a fourth resistor;

[0016] Among them, the inverting input terminal of the second operational amplifier is the reference voltage input terminal of the voltage stabilizing circuit, the negative side power supply pin of the second operational amplifier and the source of the fourth PMOS tube are connected to the digital interface voltage power supply, the non-inverting input terminal of the second operational amplifier and the second end of the third resistor are connected to the first end of the fourth resistor, the output terminal of the second operational amplifier is connected to the gate of the fourth PMOS tube, the drain of the fourth PMOS tube, the first end of the third resistor and the gate of the fifth NMOS tube are connected as the voltage stabilizing output terminal of the voltage stabilizing circuit, and the second end of the fourth resistor, the source of the fifth NMOS tube and the drain of the fifth NMOS tube are grounded.

[0017] Optionally, the control circuit specifically includes an oscillation circuit, a positive voltage generating circuit and a negative voltage generating circuit;

[0018] Among them, the power supply end of the oscillation circuit is connected to the power output end of the internal power supply generating circuit, the oscillation signal output end of the oscillation circuit is respectively connected to the clock signal input end of the positive voltage generating circuit and the clock signal input end of the negative voltage generating circuit, the output end of the positive voltage generating circuit is connected to the forward bias input end of the radio frequency switching circuit, and the output end of the negative voltage generating circuit is connected to the negative bias input end of the radio frequency switching circuit.

[0019] Optionally, the mobile industry processor interface digital module is specifically a register mobile industry processor interface digital module that controls the switch state control circuit of the radio frequency switch circuit.

[0020] Optionally, the internal power generation circuit adopts complementary metal oxide semiconductor process to form a first module of the RF module, and the control circuit, the mobile industry processor interface digital module and the RF switch circuit adopt silicon on insulating substrate process to form a second module of the RF module.

[0021] In order to solve the above technical problems, the present application also provides a radio frequency module, including a radio frequency front-end circuit and a radio frequency switch circuit for solving the wide voltage range problem of the radio frequency module;

[0022] Among them, the RF front-end circuit includes an internal power generation circuit, a mobile industry processor interface digital module and a control circuit; the power supply end of the internal power generation circuit and the power supply end of the mobile industry processor interface digital module are both connected to the digital interface voltage output end of the device, the power output end of the internal power generation circuit is connected to the power supply end of the control circuit, the output end of the control circuit is connected to the voltage bias input end of the RF switch circuit, and the output end of the mobile industry processor interface digital module is connected to the switch control end of the RF switch circuit.

[0023] Optionally, the internal power generation circuit adopts CMOS technology to form a first module of the RF module, and the control circuit, the mobile industry processor interface digital module and the RF switch circuit adopt SOI technology to form a second module of the RF module.

[0024] The RF front-end circuit for solving the problem of wide voltage domain of RF module provided by the present application includes: internal power supply generating circuit, mobile industry processor interface digital module and control circuit; wherein, the power supply end of the internal power supply generating circuit and the power supply end of the mobile industry processor interface digital module are both connected to the digital interface voltage power supply of the device, the power output end of the internal power supply generating circuit is connected to the power supply end of the control circuit, the output end of the control circuit is connected to the voltage bias input end of the RF switch circuit, and the output end of the mobile industry processor interface digital module is connected to the switch control end of the RF switch circuit. By connecting the power supply end of the internal power supply generating circuit in the RF front-end circuit to the digital interface voltage power supply of the device, the analog voltage power supply does not enter the RF front-end module chip, so that it is not affected by the output voltage of the analog voltage power supply of the device, and the voltage domain range of the digital interface voltage power supply is narrow, so there is no need to design the internal power supply generating circuit for each narrow voltage domain or design a complex internal power supply generating circuit for the wide voltage domain, so that it can adapt to the wide voltage domain of the device, thereby solving the problem of the RF front-end module chip adapting to the wide voltage domain of the device without significantly increasing the cost.

[0025] The present application also provides a radio frequency module having the above-mentioned beneficial effects, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present application or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0027] Figure 1 It is a structural schematic diagram of a radio frequency front-end circuit in a related technology;

[0028] Figure 2 A schematic diagram of the structure of a radio frequency front-end circuit for solving the problem of wide voltage range of radio frequency modules provided in an embodiment of the present application;

[0029] Figure 3 A schematic diagram of the structure of another RF front-end circuit for solving the wide voltage range problem of the RF module provided in an embodiment of the present application;

[0030] Figure 4 A circuit diagram of an internal power generation circuit provided in an embodiment of the present application;

[0031] Among them, 101 is an analog voltage power supply, 102 is a digital interface voltage power supply, 103 is an existing internal power generation circuit, 104 is a control circuit, 105 is a radio frequency switch circuit, and 106 is a mobile industry processor interface digital module; 201 is an internal power generation circuit; 301 is a bandgap reference circuit, 302 is a voltage stabilizing circuit, 303 is an oscillation circuit, 304 is a positive voltage generation circuit, and 305 is a negative voltage generation circuit. DETAILED DESCRIPTION

[0032] The core of this application is to provide a radio frequency front-end circuit and a radio frequency module that solve the problem of wide voltage domain of the radio frequency module, which can solve the problem of the radio frequency front-end module chip adapting to the wide voltage domain of the device in which it is located without significantly increasing costs.

[0033] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0034] Embodiment 1

[0035] Figure 2 A schematic diagram of the structure of a radio frequency front-end circuit for solving the problem of wide voltage range of radio frequency modules provided in an embodiment of the present application; Figure 3 A schematic diagram of the structure of another RF front-end circuit for solving the wide voltage domain problem of the RF module provided in an embodiment of the present application.

[0036] like Figure 2 As shown, the RF front-end circuit for solving the wide voltage domain problem of the RF module provided in the embodiment of the present application includes: an internal power generation circuit 201, a mobile industry processor interface digital module 106 and a control circuit 104;

[0037] Among them, the power supply end of the internal power supply generating circuit 201 and the power supply end of the mobile industry processor interface digital module 106 are both connected to the digital interface voltage power supply 102 of the device, the power output end of the internal power supply generating circuit 201 is connected to the power supply end of the control circuit 104, the output end of the control circuit 104 is connected to the voltage bias input end of the RF switching circuit, and the output end of the mobile industry processor interface digital module 106 is connected to the switch control end of the RF switching circuit.

[0038] In the specific implementation, different from the related art, in the RF front-end circuit for solving the wide voltage domain problem of the RF module provided in the embodiment of the present application, the internal power generation circuit 201 is no longer connected to the analog voltage power supply 101 of the device, but is connected to the digital interface voltage power supply 102 of the device. In the communication device including the RF module, the digital interface voltage power supply 102 supplies power to the mobile industry processor interface digital module 106 of the RF module, which is usually the register mobile industry processor interface digital module 106 of the switch state control circuit 104 that controls the RF switch circuit. The mobile industry processor interface digital module 106 is a digital circuit, and the output voltage range of the digital interface voltage power supply 102 is usually between 1.65V and 1.95V. The corresponding settings can be adapted to the voltage range based on the internal structure of the internal power generation circuit 201 in the related art. The analog voltage power supply 101 originally used to power the internal power generation circuit 201 is suspended and no longer enters the RF front-end module chip. Therefore, no matter what the voltage range of the analog voltage power supply 101 is, it will not affect the internal design of the RF front-end module chip.

[0039] To adapt to different devices, such as Figure 3 As shown, in the RF front-end circuit for solving the wide voltage domain problem of the RF module provided in the embodiment of the present application, the internal power generation circuit 201 can be formed into the first module of the RF module using the complementary metal oxide semiconductor (COMS) process, and the control circuit 104, the mobile industry processor interface digital module 106 and the RF switch circuit can be formed into the second module of the RF module using the silicon-on-insulator (SOI) process on the insulating substrate. Therefore, for different application scenarios, only the RF core circuit solution based on the SOI process needs to be changed, and the internal power generation circuit 201 using the COMS process can be reused.

[0040] Embodiment 2

[0041] Figure 4 A circuit diagram of an internal power generation circuit provided in an embodiment of the present application.

[0042] The main function of the internal power generation circuit 201 is to provide a stable power supply for the subsequent RF core circuit. Figure 3 As shown, in the RF front-end circuit for solving the wide voltage domain problem of the RF module provided in the embodiment of the present application, the internal power generation circuit 201 may specifically include a bandgap reference circuit 301 and a voltage stabilization circuit 302;

[0043] The power supply end of the bandgap reference circuit 301 and the power supply end of the voltage stabilizing circuit 302 are both connected to the digital interface voltage power supply 102, the reference voltage output end of the bandgap reference circuit 301 is connected to the reference voltage input end of the voltage stabilizing circuit 302, and the voltage stabilizing output end of the voltage stabilizing circuit 302 is connected to the power supply end of the control circuit 104.

[0044] In the specific implementation, Figure 4 As shown, the bandgap reference circuit 301 may specifically include: a first PMOS transistor M1, a second PMOS transistor M2, a third PMOS transistor M3, a first operational amplifier A1, a first resistor R1, a second resistor R2, a first diode D1, a second diode D2 and a third diode D3;

[0045] The source of the first PMOS transistor M1, the source of the second PMOS transistor M2, and the source of the third PMOS transistor M3 are all connected to the digital interface voltage power supply 102 (such as Figure 4 The drain of the first PMOS tube M1 and the anode of the first diode D1 are connected to the inverting input terminal of the first operational amplifier A1, the drain of the second PMOS tube M2 and the first end of the first resistor R1 are connected to the non-inverting input terminal of the first operational amplifier A1, the second end of the first resistor R1 is connected to the anode of the second diode D2, the gate of the first PMOS tube M1, the gate of the second PMOS tube M2, and the output terminal of the first operational amplifier A1 are connected to the gate of the third PMOS tube M3, and the drain of the third PMOS tube M3 and the first end of the second resistor R2 are connected to form the reference voltage output terminal V of the bandgap reference circuit 301. ref The second end of the second resistor R2 is connected to the anode of the third diode D3, and the cathode of the first diode D1, the cathode of the second diode D2, and the cathode of the third diode D3 are grounded.

[0046] Meanwhile, the voltage stabilizing circuit 302 may adopt a low voltage dropout linear regulator (LDO), which may specifically include: a fourth PMOS transistor M4, a fifth NMOS transistor M5, a second operational amplifier A2, a third resistor R3 and a fourth resistor R4;

[0047] The inverting input terminal of the second operational amplifier A2 is the reference voltage input terminal of the voltage stabilizing circuit 302, and the negative side power supply pin of the second operational amplifier A2, the source of the fourth PMOS tube M4 and the digital interface voltage power supply 102 (such as Figure 4 The in-phase input terminal of the second operational amplifier A2, the second end of the third resistor R3 and the first end of the fourth resistor R4 are connected, the output terminal of the second operational amplifier A2 is connected to the gate of the fourth PMOS tube M4, the drain of the fourth PMOS tube M4, the first end of the third resistor R3 and the gate of the fifth NMOS tube M5 are connected to form the regulated output terminal V of the voltage stabilizing circuit 302.LDO The second end of the fourth resistor R4, the source of the fifth NMOS transistor M5 and the drain of the fifth NMOS transistor M5 are grounded.

[0048] Embodiment 3

[0049] On the basis of the above embodiments, in the RF front-end circuit for solving the wide voltage range problem of the RF module provided in the embodiments of the present application, the control circuit 104 may specifically include an oscillation circuit 303, a positive voltage generating circuit 304 and a negative voltage generating circuit 305;

[0050] Among them, the power supply end of the oscillation circuit 303 is connected to the power output end of the internal power generating circuit 201, the oscillation signal output end of the oscillation circuit 303 is respectively connected to the clock signal input end of the positive voltage generating circuit 304 and the clock signal input end of the negative voltage generating circuit 305, the output end of the positive voltage generating circuit 304 is connected to the forward bias input end of the radio frequency switching circuit, and the output end of the negative voltage generating circuit 305 is connected to the negative bias input end of the radio frequency switching circuit.

[0051] In the embodiment of the present application, the RF core circuit is composed of a control circuit 104 and a RF switching circuit, wherein the control circuit 104 can be composed of an oscillation circuit 303, a positive voltage generating circuit 304 and a negative voltage generating circuit 305, and its power supply comes from the internal power generating circuit 201 of the previous stage, and mainly plays the role of providing frequency band selection in the RF front-end module chip and frequency band switching at the antenna.

[0052] The internal power generation circuit 201 at the front end is powered by the digital interface voltage power supply 102, which effectively avoids the frequency change of the oscillation circuit 303 caused by the change of the range of the analog voltage power supply 101, resulting in fluctuations in the positive voltage generating circuit 304 and the negative voltage generating circuit 305, and further causing changes in the RF switch bias, which brings about the overall difference in the RF switch performance (including small signal S parameters, large signal harmonics and other performance differences).

[0053] Embodiment 4

[0054] The above details the various embodiments corresponding to the RF front-end circuit that solves the problem of wide voltage domain of the RF module. On this basis, the present application also discloses a RF module corresponding to the above-mentioned RF front-end circuit that solves the problem of wide voltage domain of the RF module.

[0055] The radio frequency module provided in the embodiment of the present application includes a radio frequency front-end circuit and a radio frequency switch circuit that solve the problem of wide voltage range of the radio frequency module;

[0056] Among them, the RF front-end circuit includes an internal power generation circuit, a mobile industry processor interface digital module and a control circuit; the power supply end of the internal power generation circuit and the power supply end of the mobile industry processor interface digital module are both connected to the digital interface voltage output end of the device, the power output end of the internal power generation circuit is connected to the power supply end of the control circuit, the output end of the control circuit is connected to the voltage bias input end of the RF switch circuit, and the output end of the mobile industry processor interface digital module is connected to the switch control end of the RF switch circuit.

[0057] In the RF module provided in the embodiment of the present application, by connecting the power supply end of the internal power generating circuit in the RF front-end circuit to the digital interface voltage power supply of the device, the analog voltage power supply does not enter the RF front-end module chip, and is thus not affected by the output voltage of the analog voltage power supply of the device. The voltage domain range of the digital interface voltage power supply is narrow, so there is no need to design an internal power generating circuit for each narrow voltage domain or to design a complex internal power generating circuit for a wide voltage domain. It can adapt to the wide voltage domain of the device, thereby solving the problem of the RF front-end module chip adapting to the wide voltage domain of the device without significantly increasing costs.

[0058] Furthermore, in the RF module provided in the embodiment of the present application, the internal power generation circuit can be formed into the first module of the RF module using the CMOS process, and the control circuit, the mobile industry processor interface digital module and the RF switch circuit can be formed into the second module of the RF module using the SOI process. Therefore, for different application scenarios, only the RF core circuit solution based on the SOI process needs to be changed, and the internal power generation circuit using the CMOS process can be reused.

[0059] Since the embodiments of the apparatus part correspond to the embodiments of the method part, please refer to the description of the embodiments of the method part for the embodiments of the apparatus part, which will not be repeated here.

[0060] The above is a detailed introduction to the RF front-end circuit and RF module provided by the present application for solving the problem of wide voltage domain of the RF module. The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the embodiments can refer to each other. For the RF module disclosed in the embodiment, since it corresponds to the RF front-end circuit for solving the problem of wide voltage domain of the RF module disclosed in the embodiment, the description is relatively simple. For relevant parts, refer to the description of the RF front-end circuit for solving the problem of wide voltage domain of the RF module. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.

[0061] It should also be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

Claims

1. A radio frequency front-end circuit for solving the problem of wide voltage range of radio frequency module, characterized in that: include: Internal power generation circuit, mobile industry processor interface digital module and control circuit; Among them, the power supply end of the internal power supply generating circuit and the power supply end of the mobile industry processor interface digital module are both connected to the digital interface voltage power supply of the device, the power output end of the internal power supply generating circuit is connected to the power supply end of the control circuit, the output end of the control circuit is connected to the voltage bias input end of the RF switching circuit, and the output end of the mobile industry processor interface digital module is connected to the switch control end of the RF switching circuit.

2. The RF front-end circuit for solving the wide voltage range problem of the RF module according to claim 1, characterized in that: The internal power generation circuit specifically includes a bandgap reference circuit and a voltage stabilization circuit; The power supply end of the bandgap reference circuit and the power supply end of the voltage stabilizing circuit are both connected to the digital interface voltage power supply, the reference voltage output end of the bandgap reference circuit is connected to the reference voltage input end of the voltage stabilizing circuit, and the voltage stabilizing output end of the voltage stabilizing circuit is connected to the power supply end of the control circuit.

3. The RF front-end circuit for solving the wide voltage range problem of the RF module according to claim 2, characterized in that: The bandgap reference circuit specifically includes: a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a first operational amplifier, a first resistor, a second resistor, a first diode, a second diode and a third diode; The source of the first PMOS tube, the source of the second PMOS tube, and the source of the third PMOS tube are all connected to the digital interface voltage power supply, the drain of the first PMOS tube and the anode of the first diode are connected to the inverting input terminal of the first operational amplifier, the drain of the second PMOS tube and the first end of the first resistor are connected to the non-inverting input terminal of the first operational amplifier, the second end of the first resistor is connected to the anode of the second diode, the gate of the first PMOS tube, the gate of the second PMOS tube, and the output terminal of the first operational amplifier are connected to the gate of the third PMOS tube, the drain of the third PMOS tube and the first end of the second resistor are connected to the reference voltage output terminal of the bandgap reference circuit, the second end of the second resistor is connected to the anode of the third diode, and the cathodes of the first diode, the second diode, and the third diode are grounded.

4. The RF front-end circuit for solving the wide voltage range problem of the RF module according to claim 2, characterized in that: The voltage stabilizing circuit is specifically a low voltage drop linear regulator; The low voltage difference linear regulator specifically includes: a fourth PMOS tube, a fifth NMOS tube, a second operational amplifier, a third resistor and a fourth resistor; Among them, the inverting input terminal of the second operational amplifier is the reference voltage input terminal of the voltage stabilizing circuit, the negative side power supply pin of the second operational amplifier and the source of the fourth PMOS tube are connected to the digital interface voltage power supply, the non-inverting input terminal of the second operational amplifier and the second end of the third resistor are connected to the first end of the fourth resistor, the output terminal of the second operational amplifier is connected to the gate of the fourth PMOS tube, the drain of the fourth PMOS tube, the first end of the third resistor and the gate of the fifth NMOS tube are connected as the voltage stabilizing output terminal of the voltage stabilizing circuit, and the second end of the fourth resistor, the source of the fifth NMOS tube and the drain of the fifth NMOS tube are grounded.

5. The RF front-end circuit for solving the wide voltage range problem of the RF module according to claim 1, characterized in that: The control circuit specifically includes an oscillation circuit, a positive voltage generating circuit and a negative voltage generating circuit; Among them, the power supply end of the oscillation circuit is connected to the power output end of the internal power supply generating circuit, the oscillation signal output end of the oscillation circuit is respectively connected to the clock signal input end of the positive voltage generating circuit and the clock signal input end of the negative voltage generating circuit, the output end of the positive voltage generating circuit is connected to the forward bias input end of the radio frequency switching circuit, and the output end of the negative voltage generating circuit is connected to the negative bias input end of the radio frequency switching circuit.

6. The RF front-end circuit for solving the wide voltage range problem of the RF module according to claim 1, characterized in that: The mobile industry processor interface digital module is specifically a register mobile industry processor interface digital module that controls the switch state control circuit of the radio frequency switch circuit.

7. The RF front-end circuit for solving the wide voltage range problem of the RF module according to claim 1, characterized in that: The internal power generation circuit adopts complementary metal oxide semiconductor technology to form the first module of the radio frequency module, and the control circuit, the mobile industry processor interface digital module and the radio frequency switch circuit adopt silicon on insulating substrate technology to form the second module of the radio frequency module.

8. A radio frequency module, characterized in that: Including RF front-end circuit and RF switch circuit to solve the wide voltage range problem of RF module; Among them, the RF front-end circuit includes an internal power generation circuit, a mobile industry processor interface digital module and a control circuit; the power supply end of the internal power generation circuit and the power supply end of the mobile industry processor interface digital module are both connected to the digital interface voltage output end of the device, the power output end of the internal power generation circuit is connected to the power supply end of the control circuit, the output end of the control circuit is connected to the voltage bias input end of the RF switch circuit, and the output end of the mobile industry processor interface digital module is connected to the switch control end of the RF switch circuit.

9. The radio frequency module according to claim 8, characterized in that: The internal power generation circuit adopts CMOS technology to form the first module of the RF module, and the control circuit, the mobile industry processor interface digital module and the RF switch circuit adopt SOI technology to form the second module of the RF module.

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