Trans-perovskite solar cell and interface modification method thereof

Abstract

The invention provides a trans-perovskite solar cell and an interface modification method thereof, and relates to the technical field of perovskite solar cells, and an interface modification layer of the trans-perovskite solar cell is a coating formed by an interface material solution containing a surfactant. Wherein the surfactant comprises at least one of tetradecyl dimethyl (3-sulfopropyl) ammonium hydroxide inner salt, hexadecyl trimethyl ammonium bromide, dodecyl dimethyl benzyl ammonium chloride, dioctadecyl dimethyl ammonium bromide and octadecyl dimethyl hydroxyethyl ammonium nitrate. According to the invention, by adding the specific surfactant into the interface modification layer, the technical effects of optimizing the interface between the transmission layer and the perovskite layer, improving the interface transmission capability, reducing the interface defects and improving the crystallization quality of the perovskite thin film are achieved, so that the efficient perovskite solar cell module can be formed; meanwhile, the preparation of a large-area assembly can be realized by the interface modification method disclosed by the invention.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite solar cells, and in particular to an inverted perovskite solar cell and an interface modification method thereof. Background Art

[0002] At present, the energy conversion efficiency of perovskite solar cells (PSC) has exceeded 26%, comparable to the energy conversion efficiency of traditional crystalline silicon solar cells. Perovskite solar cells have the advantages of high efficiency, low manufacturing cost, versatility (variability of shape and color), and can be combined with solar cells to prepare stacked solar cells, and have become a research hotspot.

[0003] Perovskite solar cells are composed of a multi-layer thin film structure, in which the light-absorbing active layer (perovskite layer) is sandwiched between two charge transport layers (hole transport layer and electron transport layer). In the prior art, although the defects between the transport layer and the perovskite layer can be optimized by using appropriate interface modification methods, the energy levels between the transport layer and the perovskite are more matched, thereby improving the crystallization quality of the perovskite layer, reducing the degree of defects, protecting the perovskite layer and reducing non-radiative recombination, the current preparation process of high-efficiency PSCs is a spin coating process, which makes it impossible to prepare large-area components, which is not conducive to the commercial development of perovskite solar cells.

[0004] Therefore, there is an urgent need to develop interface modification methods that can achieve large-area component preparation.

[0005] In view of this, the present invention is proposed. Summary of the invention

[0006] One of the purposes of the present invention is to provide an inverse perovskite solar cell with high photoelectric conversion efficiency.

[0007] The second object of the present invention is to provide an interface modification method for an inverted perovskite solar cell, which can not only prepare high-efficiency perovskite solar cells, but also realize the preparation of large-area battery components.

[0008] In order to achieve the above-mentioned purpose of the present invention, the following technical solutions are particularly adopted:

[0009] In a first aspect, an inverted perovskite solar cell, wherein the interface modification layer of the inverted perovskite solar cell is a coating formed by an interface material solution containing a surfactant;

[0010] The surfactant includes at least one of tetradecyldimethyl (3-sulfopropyl) ammonium hydroxide inner salt, hexadecyltrimethylammonium bromide, dodecyldimethylbenzylammonium chloride, dioctadecyldimethylammonium bromide and octadecyldimethylhydroxyethylammonium nitrate.

[0011] Furthermore, the concentration of the surfactant in the solution is 0.1 mg / ml-5 mg / ml.

[0012] Furthermore, the concentration of the interface material in the solution is 0.5 mg / ml-10 mg / ml.

[0013] Further, the interface material includes at least one of [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, 2-(9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(3,6-diphenyl-9H-carbazole-9-yl)butyl]phosphonic acid, 4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, poly[bis(4-phenyl)(4-butylphenyl)amine], [4-(9H-carbazole-9-yl)butyl]phosphonic acid and 4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid.

[0014] Further, the interface modification layer is disposed between the hole transport layer and the perovskite layer;

[0015] The material of the hole transport layer includes at least one of nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, 2-(9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(3,6-diphenyl-9H-carbazole-9-yl)butyl]phosphonic acid, 4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, poly[bis(4-phenyl)(4-butylphenyl)amine], [4-(9H-carbazole-9-yl)butyl]phosphonic acid and 4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid;

[0016] The structural system of the perovskite layer includes FA 1-x Cs x System and Cs x FA 1-x-y MA y at least one of the systems.

[0017] Furthermore, an electron transport layer is provided on the perovskite layer;

[0018] A metal electrode is arranged on the electron transport layer.

[0019] Furthermore, the material of the metal electrode includes at least one of Ag, Cu, Ni and Au.

[0020] In a second aspect, a method for modifying the interface of an inverted perovskite solar cell as described in any one of the above items comprises the following steps:

[0021] An interface modification layer is prepared on the hole transport layer using an interface material solution containing a surfactant, a perovskite layer is prepared on the interface modification layer, and then an electron transport layer is prepared on the perovskite layer to obtain the inverse perovskite solar cell.

[0022] Further, the method for preparing the interface modification layer includes at least one of a spin coating method and a slit coating method;

[0023] Preferably, the method for preparing the perovskite layer comprises at least one of a spin coating method and a slit coating method.

[0024] Furthermore, the method for preparing the electron transport layer includes at least one of a spin coating method and an evaporation method.

[0025] Compared with the prior art, the present invention has at least the following beneficial effects:

[0026] The inverted perovskite solar cell provided by the present invention adds a specific surfactant as a modified additive in the interface modification layer, which not only optimizes the interface between the transmission layer and the perovskite layer, improves the interface transmission capacity, and reduces interface defects, but also improves the crystallization quality of the perovskite film, thereby significantly improving the photoelectric conversion efficiency of the battery assembly.

[0027] The interface modification method of the inverted perovskite solar cell provided by the present invention has a simple process, high efficiency and high success rate, and can prepare high-efficiency perovskite solar cells and realize the preparation of large-area battery components, so it is conducive to obtaining high-efficiency large-area perovskite solar cell components and is suitable for industrial production. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0029] Figure 1 A schematic diagram of the structure of an inverted perovskite solar cell provided in Example 1 of the present invention;

[0030] Figure 2 The JV curve diagram obtained by the test example of the present invention;

[0031] Figure 3 This is a statistical distribution diagram of photovoltaic parameters obtained in the test example of the present invention.

[0032] Icon: 1-FTO; 2-nickel oxide; 3-interface modification layer; 4-perovskite layer; 5-graphene C60; 6-bathocuproine; 7-metal electrode. DETAILED DESCRIPTION

[0033] The technical solution of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] According to a first aspect of the present invention, there is provided an inverse perovskite solar cell, wherein the interface modification layer of the inverse perovskite solar cell is a coating formed by an interface material solution containing a surfactant;

[0035] The surfactant includes but is not limited to at least one of tetradecyldimethyl (3-sulfopropyl) ammonium hydroxide inner salt (TSB), hexadecyltrimethylammonium bromide, dodecyldimethylbenzylammonium chloride, dioctadecyldimethylammonium bromide and octadecyldimethylhydroxyethylammonium nitrate.

[0036] The present invention not only optimizes the interface between the transport layer and the perovskite layer, improves the interface transmission capacity, reduces interface defects, but also improves the crystallization quality of the perovskite film, thereby significantly improving the photoelectric conversion efficiency of the battery assembly by adding a specific surfactant as an additive in the interface modification layer.

[0037] In a preferred embodiment, the concentration of the surfactant in the solution can be 0.1 mg / ml-5 mg / ml, and its typical but non-limiting concentration is, for example, 0.1 mg / ml, 0.5 mg / ml, 1 mg / ml, 2 mg / ml, 3 mg / ml, 4 mg / ml, and 5 mg / ml. The appropriate concentration of the surfactant is more conducive to optimizing the interface between the transport layer and the perovskite layer, and is more conducive to improving the photoelectric conversion efficiency of the battery assembly; if the concentration of the surfactant is too low, it will lead to no significant change in the photovoltaic parameters of the battery, and the surfactant will not produce a significant optimization effect; if the concentration of the surfactant is too high, it will lead to a significant decrease in open circuit voltage and short circuit current, resulting in low photoelectric conversion efficiency of the battery, and the effect of improving wettability disappears.

[0038] In a preferred embodiment, the concentration of the interface material in the solution can be 0.5mg / ml-10mg / ml, and its typical but non-limiting concentration is, for example, 0.5mg / ml, 1mg / ml, 2mg / ml, 3mg / ml, 4mg / ml, 5mg / ml, 6mg / ml, 7mg / ml, 8mg / ml, 9mg / ml, 10mg / ml. The appropriate concentration of the interface material is more conducive to improving the formation effect of the interface modification layer and the photoelectric conversion efficiency of the battery assembly; if the concentration of the interface material is too low, it will cause the interface material to spread unevenly on the FTO or ITO substrate, thereby affecting carrier transport; if the concentration of the interface material is too high, it will cause the interface layer to be thick and the SAM material to accumulate, which will also affect carrier transport.

[0039] In a preferred embodiment, the interface material includes but is not limited to at least one of [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), 2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [4-(3,6-diphenyl-9H-carbazole-9-yl)butyl]phosphonic acid (ph-4PACz), 4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid (Me-4PACz), poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD), [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz) and 4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz).

[0040] In the present invention, the interface modification layer is disposed between the hole transport layer and the perovskite layer.

[0041] In a preferred embodiment, the material of the hole transport layer includes but is not limited to nickel oxide (NIO x ), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), 2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [4-(3,6-diphenyl-9H-carbazole-9-yl)butyl]phosphonic acid (ph-4PACz), 4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid (Me-4PACz), poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD), [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz) and at least one of 4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz).

[0042] In a preferred embodiment, the structural system of the perovskite layer includes but is not limited to FA 1-x Cs x System and Cs x FA 1-x-y MA y at least one of the systems.

[0043] In the present invention, an electron transport layer is provided on the perovskite layer;

[0044] Meanwhile, a metal electrode is disposed on the electron transport layer.

[0045] In a preferred embodiment, the material of the metal electrode includes but is not limited to at least one of Ag, Cu, Ni and Au.

[0046] According to a second aspect of the present invention, there is provided a method for modifying the interface of an inverse perovskite solar cell as described in any one of the above, comprising the following steps:

[0047] An interface modification layer is prepared on the hole transport layer using an interface material solution containing a surfactant, a perovskite layer is then prepared on the interface modification layer, and then an electron transport layer is prepared on the perovskite layer to obtain an inverse perovskite solar cell.

[0048] In the present invention, the method for preparing the interface modification layer includes but is not limited to at least one of spin coating and slit coating; the method for preparing the perovskite layer includes but is not limited to at least one of spin coating and slit coating; the method for preparing the electron transport layer includes but is not limited to at least one of spin coating and evaporation.

[0049] The interface modification method of the inverted perovskite solar cell provided by the present invention has a simple process, high efficiency and high success rate, and can prepare high-efficiency perovskite solar cells and realize the preparation of large-area battery components, so it is conducive to obtaining high-efficiency large-area perovskite solar cell components and is suitable for industrial production.

[0050] A typical interface modification method for an inverse perovskite solar cell comprises the following steps:

[0051] (1) Preparation and formation of hole transport layer:

[0052] The hole transport layer is formed by using the material of the hole transport layer through at least one method selected from the group consisting of spin coating, slit coating, magnetron sputtering and evaporation;

[0053] (2) Preparation and formation of interface modification layer:

[0054] On the hole transport layer formed in step (1), an interface modification layer is prepared by using an interface material solution containing a surfactant through at least one of a spin coating method and a slit coating method;

[0055] The concentration of the interface material in the solution is between 0.5 mg / ml and 10 mg / ml, the concentration of the surfactant is between 0.1 mg / ml and 5 mg / ml, and the solvent can be isopropanol;

[0056] The surfactant may be selected from at least one of tetradecyldimethyl (3-sulfopropyl) ammonium hydroxide inner salt, hexadecyltrimethylammonium bromide, dodecyldimethylbenzylammonium chloride, dioctadecyldimethylammonium bromide and octadecyldimethylhydroxyethylammonium nitrate;

[0057] (3) Preparation and formation of perovskite layer:

[0058] Forming a perovskite layer on the interface modification layer formed in step (2) by using a perovskite solution through at least one of a spin coating method and a slit coating method;

[0059] The solvent may be selected from at least one of N,N-dimethylformamide (DMF), N-methylpyrrolidone (NMP) and dimethyl sulfoxide (DMSO);

[0060] Among them, the process parameters of the slit coating method are: the die head spacing is between 10um-100um, the platform moving speed is between 5mm / s-80mm / s, and the glue coating amount is between 10ul-100ul;

[0061] (4) Preparation and formation of electron transport layer:

[0062] Forming an electron transport layer on the perovskite layer formed in step (3) by at least one of a spin coating method and an evaporation method;

[0063] (5) Preparation of metal electrodes:

[0064] A metal electrode is formed on the electron transport layer formed in step (4) by evaporation.

[0065] The present invention is further described below by way of examples. Unless otherwise specified, the materials in the examples are prepared according to existing methods or directly purchased from the market.

[0066] Example 1

[0067] This embodiment provides an inverted perovskite solar cell, the device structure is shown in Figure 1 , which consists of FTO, nickel oxide (NIO x ), interface modification layer, perovskite layer, graphene C60, bathocuproin (BCP) and metal electrodes. The active area of ​​the device is 0.09cm 2 ;

[0068] In this embodiment, the above-mentioned inverse perovskite solar cell is prepared by the following steps:

[0069] (a) Preparation and formation of hole transport layer:

[0070] The material of the hole transport layer is nickel oxide (NIO x ), the solution concentration is 10 mg / ml, and ultrapure water is used as the solvent;

[0071] The solution was evenly spin-coated on the FTO glass substrate at a spin coating parameter of 2000 rpm for 30 seconds, and then placed on a hot plate at 100° C. for 10 minutes to complete the preparation of the hole transport layer to form a hole transport layer;

[0072] (b) Preparation and formation of interface modification layer:

[0073] On the hole transport layer formed in step (a), an interface modification layer is prepared by a slit coating method using an interface material solution containing a surfactant;

[0074] The interface material used was 2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz) at a concentration of 1 mg / ml; the surfactant was tetradecyldimethyl (3-sulfopropyl) ammonium hydroxide inner salt (TSB) at a concentration of 0.5 mg / ml; the solvent used was isopropanol;

[0075] Process parameters of slit coating: die head spacing 70um, platform moving speed 50mm / s, glue coating speed 0.10mm / s, glue coating amount 19ul;

[0076] After coating, the coating was post-processed by vacuum drying equipment. During vacuum drying, the pressure was pumped to 10Pa and maintained for 15 seconds. The coating was then placed on a hot plate at 100°C and heated for 10 minutes to complete the preparation of the interface modification layer.

[0077] (c) Preparation and formation of perovskite layer:

[0078] A perovskite precursor solution was prepared using lead iodide (PbI2), formamidine hydroiodide (FAI), methylamine hydroiodide (MAI), cesium iodide (CsI) and methylammonium chloride (MACl); the solvent used was N,N-dimethylformamide (DMF) and N-methylpyrrolidone (NMP), and the mass ratio of DMF to NMP was 6:1;

[0079] The perovskite precursor solution is evenly spin-coated on the interface modification layer formed in step (b), with spin-coating parameters of 1000 rpm for 10 seconds and 4000 rpm for 35 seconds, using chlorobenzene as an anti-solvent, and then placed on a hot plate at 100° C. for 30 minutes to complete the preparation of the perovskite layer, thereby forming a perovskite layer;

[0080] (d) Preparing and forming an electron transport layer:

[0081] Vapor-deposit an electron transport layer C60 (coating thickness 30 nm) on the perovskite layer formed in step (c), and then evaporate BCP (coating thickness 8 nm);

[0082] (e) Preparation of metal electrodes:

[0083] Metal Ag is evaporated on the electron transport layer formed in step (d) with a coating thickness of 200 nm to obtain a complete inverse perovskite solar cell.

[0084] Example 2

[0085] The difference between this embodiment and embodiment 1 is that in step (b), the concentration of the surfactant TSB is 1 mg / ml;

[0086] The remaining steps and process parameters are the same as those in Example 1 to obtain an inverted perovskite solar cell.

[0087] Example 3

[0088] The difference between this embodiment and embodiment 1 is that in step (b), the concentration of the surfactant TSB is 1.5 mg / ml;

[0089] The remaining steps and process parameters are the same as those in Example 1 to obtain an inverted perovskite solar cell.

[0090] Example 4

[0091] The difference between this embodiment and embodiment 1 is that in step (b), the concentration of surfactant TSB is 0.1 mg / ml;

[0092] The remaining steps and process parameters are the same as those in Example 1 to obtain an inverted perovskite solar cell.

[0093] Example 5

[0094] The difference between this embodiment and embodiment 1 is that the active area of ​​the device is 28 cm 2 ;

[0095] At the same time, the perovskite layer was prepared by slit coating method, and the slit coating parameters were: die head spacing 80um, platform moving speed 50mm / s, glue coating speed 0.10mm / s, glue coating amount 33ul; after coating, vacuum drying equipment was used to assist crystallization, and then placed on a 110℃ hot table for heating for 10 minutes to complete the preparation of the perovskite layer;

[0096] The remaining steps and process parameters are the same as those in Example 1 to obtain an inverted perovskite solar cell.

[0097] Example 6

[0098] The difference between this embodiment and embodiment 1 is that in step (b), the interface modification layer is prepared by spin coating, the spin coating parameters are 4000 rpm, 30 s, and then placed on a hot plate at 100° C. for 10 min to complete the preparation of the interface modification layer;

[0099] The remaining steps and process parameters are the same as those in Example 1 to obtain an inverted perovskite solar cell.

[0100] Comparative Example 1

[0101] The difference between this comparative example and Example 1 is that in step (b), the interface material solution does not contain a surfactant;

[0102] The remaining steps and process parameters are the same as those in Example 1 to obtain an inverted perovskite solar cell.

[0103] Comparative Example 2

[0104] The difference between this comparative example and Example 1 is that in step (b), an interface material solution having a concentration of 1 mg / ml is first applied to form an interface layer, and then a tetradecyl dimethyl (3-sulfopropyl) ammonium hydroxide inner salt (TSB) solution having a concentration of 0.5 mg / ml is applied to form a TSB layer;

[0105] The remaining steps and process parameters are the same as those in Example 1 to obtain an inverted perovskite solar cell.

[0106] Comparative Example 3

[0107] The difference between this comparative example and Example 1 is that in step (b), no interface layer is formed on the hole transport layer, and only a tetradecyldimethyl (3-sulfopropyl) ammonium hydroxide inner salt (TSB) solution with a concentration of 0.5 mg / ml is used to form a TSB layer;

[0108] The remaining steps and process parameters are the same as those in Example 1 to obtain an inverted perovskite solar cell.

[0109] Comparative Example 4

[0110] The difference between this comparative example and Example 1 is that step (b) is not performed, that is, the perovskite layer is directly prepared on the hole transport layer;

[0111] The remaining steps and process parameters are the same as those in Example 1 to obtain an inverted perovskite solar cell.

[0112] Test example

[0113] The performance of the inverse perovskite solar cells obtained in each embodiment and comparative example is tested. The results are shown in Table 1 and Table 2, and the JV curve is shown in Figure 2, the statistical distribution diagram of photovoltaic parameters is shown in Figure 3 .

[0114] Test method: Use a solar simulator to perform component IV testing.

[0115] Table 1

[0116]

[0117] Table 2

[0118]

[0119] From the performance data, it can be seen that when the surfactant TSB is used as an additive added to the interface material 2PACz solution, the best effect is achieved when the TSB concentration is 0.5 mg / ml, and the Voc and PCE of the battery components increase most significantly, obtaining a PCE (photovoltaic conversion efficiency) of 21.24%, which is significantly better than the embodiments using other TSB concentrations.

[0120] It can be seen from the performance results of Example 1, Example 5 and Example 6 that when TSB and 2PACz are mixed, the performance results of the batteries prepared by spin coating and slit coating are similar. The slit coating technology can be used to prepare in an air environment and scaled up to large-area components.

[0121] By comparing the performance results of the examples with those of the comparative examples, it was found that the efficiency of the perovskite cell prepared by adding TSB to the interface material for mixed use is significantly better than the efficiency of the perovskite cell using only the interface layer, only the TSB layer, or the interface layer superimposed on the TSB layer, and can more significantly improve Voc and PCE.

[0122] Compared with Comparative Example 4, Comparative Example 1 has x After the 2PACz interface modification layer is stacked on the hole transport layer, the SAM material containing phosphate groups is anchored on the NiO x On the other hand, NiO x The surface roughness of the substrate reduces interface defects and the photoelectric conversion efficiency of perovskite solar cells increases by about 1%.

[0123] Compared with Comparative Example 4, Comparative Example 3 has x A TSB layer is stacked on the hole transport layer alone. The long-chain alkyl group gives TSB good surface activity, enabling it to improve the wettability of the liquid. However, when the TSB layer is used alone, there is no obvious improvement in the photovoltaic parameters of the module, indicating that the improvement in wettability alone has little effect on improving the efficiency of the module.

[0124] Compared with Comparative Example 4, Comparative Example 2 has xAfter stacking the 2PACz interface layer on the hole transport layer alone, and then applying a layer of TSB modification, the component efficiency has no obvious improvement. At the same time, due to the extra layer of modification, the coating step is increased. Coating in the air is very likely to introduce new defects (such as dust), which will affect the component efficiency.

[0125] Compared with Comparative Examples 1, 2, 3 and 4, Example 1 has a x After the hole transport layer is superimposed with a 2PACz interface modification layer doped with TSB at a suitable concentration, the two functions are superimposed to reduce the NiO x The surface roughness of the substrate passivates interface defects, improves the wettability of the liquid, optimizes the interface contact between the hole layer and the perovskite layer, improves charge transfer, and improves the crystallization quality of the perovskite. The mixed use of TSB and 2PACz has no adverse effects and can significantly improve the photoelectric conversion efficiency of the component. The process is simple to operate and is more suitable for the preparation of large-area components.

[0126] It can be seen that the interface modification method of the inverted perovskite solar cell provided by the present invention adds a suitable surfactant as a modified additive to the interface modification material, optimizes the interface between the transmission layer and the perovskite layer, improves the interface transmission capacity, reduces interface defects, and also improves the crystallization quality of the perovskite film, thereby facilitating the formation of a high-efficiency perovskite solar cell module; at the same time, the interface modification method of the present invention can realize the preparation of large-area modules.

[0127] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An inverted perovskite solar cell, characterized in that: The interface modification layer of the inverse perovskite solar cell is a coating formed by an interface material solution containing a surfactant; The surfactant includes at least one of tetradecyldimethyl (3-sulfopropyl) ammonium hydroxide inner salt, hexadecyltrimethylammonium bromide, dodecyldimethylbenzylammonium chloride, dioctadecyldimethylammonium bromide and octadecyldimethylhydroxyethylammonium nitrate.

2. The inverted perovskite solar cell according to claim 1, characterized in that: The concentration of the surfactant in the solution is 0.1 mg / ml-5 mg / ml.

3. The inverted perovskite solar cell according to claim 1, characterized in that: The concentration of the interface material in the solution is 0.5 mg / ml-10 mg / ml.

4. The inverted perovskite solar cell according to claim 3, characterized in that: The interface material includes at least one of [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, 2-(9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(3,6-diphenyl-9H-carbazole-9-yl)butyl]phosphonic acid, 4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, poly[bis(4-phenyl)(4-butylphenyl)amine], [4-(9H-carbazole-9-yl)butyl]phosphonic acid and 4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid.

5. The inverted perovskite solar cell according to any one of claims 1 to 4, characterized in that: The interface modification layer is disposed between the hole transport layer and the perovskite layer; The material of the hole transport layer includes at least one of nickel oxide, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, 2-(9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(3,6-diphenyl-9H-carbazole-9-yl)butyl]phosphonic acid, 4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, poly[bis(4-phenyl)(4-butylphenyl)amine], [4-(9H-carbazole-9-yl)butyl]phosphonic acid and 4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid; The structural system of the perovskite layer includes FA 1-x Cs x System and Cs x FA 1-x-y MA y at least one of the systems.

6. The inverted perovskite solar cell according to claim 5, characterized in that: An electron transport layer is disposed on the perovskite layer; A metal electrode is arranged on the electron transport layer.

7. The inverted perovskite solar cell according to claim 6, characterized in that: The material of the metal electrode includes at least one of Ag, Cu, Ni and Au.

8. An interface modification method for an inverse perovskite solar cell according to any one of claims 1 to 7, characterized in that: The following steps are involved: An interface modification layer is prepared on the hole transport layer using an interface material solution containing a surfactant, a perovskite layer is prepared on the interface modification layer, and then an electron transport layer is prepared on the perovskite layer to obtain the inverse perovskite solar cell.

9. The method according to claim 8, characterized in that The method for preparing the interface modification layer comprises at least one of a spin coating method and a slit coating method; Preferably, the method for preparing the perovskite layer comprises at least one of a spin coating method and a slit coating method.

10. The method according to claim 8, characterized in that The method for preparing the electron transport layer includes at least one of a spin coating method and an evaporation method.

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