Solar cell and preparation method thereof

Abstract

The invention provides a solar cell and a preparation method thereof. The solar cell comprises a substrate; the perovskite film layer is located on one side of the substrate, the perovskite film layer is provided with a plurality of spaced first scribing areas, and the first scribing areas divide the perovskite film layer into a plurality of parts; the electron transport layer is located on the side, away from the substrate, of the perovskite film layer, the electron transport layer is provided with a plurality of spaced second scribing areas, the second scribing areas divide the electron transport layer into a plurality of parts, and the projections of the second scribing areas and the first scribing areas on the surface of the substrate have overlapped areas; the second scribing areas are in one-to-one correspondence with the first scribing areas, and part of the electron transport layer is filled in the first scribing areas. In the subsequent annealing process of the solar cell, the plurality of first scribing regions enable the thermal stress generated by the perovskite film layer to be released, and the crystallinity of the perovskite film layer is improved. The problem that a perovskite film layer with high crystallinity cannot be formed after the structure of the solar cell is annealed in the prior art is solved.

Description

Technical Field

[0001] The present application relates to the technical field of photovoltaic cells, and in particular to a solar cell and a method for preparing the same. Background Art

[0002] In recent years, the crystallinity of the perovskite film layer of organic-inorganic hybrid perovskite solar cells (PSCs) is crucial to the device performance, but the perovskite film layer with larger grains usually has lower trap state density and higher carrier mobility, which will lead to reduced carrier recombination and enhanced photovoltaic performance of PSCs. The annealing conditions of the perovskite film are not conducive to the growth of perovskite grains. However, the thermal annealing process of the perovskite film layer is time-consuming and energy-consuming, and is incompatible with the low-temperature manufacturing required for some devices (such as flexible PSCs on plastic substrates), and the structure of the solar cell is easily heated unevenly during the annealing process, resulting in poor crystallinity of the perovskite film layer. Although some attempts to use laser annealing of perovskite film layers have been reported, so far, no high-performance PSCs based on this technology have been achieved. However, these methods cause high substrate temperatures, and the device efficiency is even lower than that of the control device.

[0003] Invention

[0004] The present application provides a solar cell and a method for preparing the same, so as to solve the problem in the related art that the structure of the solar cell cannot form a perovskite film layer with high crystallinity after annealing.

[0005] According to one aspect of the present application, a solar cell is provided, comprising: a substrate; a perovskite film layer, located on one side of the substrate, the perovskite film layer having a plurality of spaced first slicing regions, the first slicing regions dividing the perovskite film layer into a plurality of parts; an electron transport layer, located on a side of the perovskite film layer away from the substrate, the electron transport layer having a plurality of spaced second slicing regions, the second slicing regions dividing the electron transport layer into a plurality of parts, the second slicing regions having an overlapping region with a projection of the first slicing regions on the surface of the substrate, the second slicing regions corresponding one-to-one to the first slicing regions, and part of the electron transport layer being filled in the first slicing regions.

[0006] Optionally, the solar cell also includes: a hole transport layer, located on the side of the perovskite film layer away from the electron transport layer, the hole transport layer having a plurality of spaced third slicing regions, the third slicing regions dividing the hole transport layer into a plurality of parts, the third slicing regions being filled with the perovskite film layer, the third slicing regions having an overlapping region with a projection of the first slicing regions on the substrate surface, and the third slicing regions corresponding one to one to the first slicing regions.

[0007] Optionally, the solar cell further includes: a transparent conductive layer located between the substrate and the hole transport layer, the transparent conductive layer having a plurality of spaced fourth scribing regions, the fourth scribing regions dividing the transparent conductive layer into a plurality of parts, the fourth scribing regions being filled with the hole transport layer.

[0008] Optionally, the solar cell further includes: an electrode layer, located on a side of the electron transport layer away from the perovskite film layer, and part of the electrode layer is filled in the second slicing area.

[0009] Optionally, the solar cell has a plurality of spaced fifth scribing regions, and the fifth scribing regions at least divide the multilayer film layer formed by the electron transport layer, the perovskite film layer, the hole transport layer and the electrode layer of the solar cell into a plurality of parts.

[0010] Optionally, the perovskite film layer is prepared by a rapid annealing process.

[0011] Optionally, the laser output power of the rapid annealing is 20W to 30W.

[0012] Optionally, the laser scanning rate of the rapid annealing is 40 mm / min to 60 mm / min.

[0013] According to another aspect of the present application, a method for preparing a solar cell is provided, comprising: providing a substrate; forming a perovskite film layer on one side of the substrate, the perovskite film layer having a plurality of spaced first slicing regions, the first slicing regions dividing the perovskite film layer into a plurality of parts; forming an electron transport layer on a side of the perovskite film layer away from the substrate, the electron transport layer having a plurality of spaced second slicing regions, the electron transport layer being divided into a plurality of parts, the second slicing regions having an overlapping region with a projection of the first slicing regions on the surface of the substrate, the second slicing regions corresponding one-to-one to the first slicing regions, and a portion of the electron transport layer being filled in the first slicing regions.

[0014] Optionally, the steps of forming the perovskite film layer and the electron transport layer include: forming a hole transport layer on the substrate, scribing the hole transport layer so that the hole transport layer has a plurality of spaced third scribing areas; forming the perovskite film layer on the hole transport layer, rapidly annealing and scribing the perovskite film layer in sequence so that the perovskite film layer has a plurality of spaced first scribing areas, and a portion of the perovskite film layer is filled in the third scribing areas to form the perovskite film layer; forming an electron transport layer on the perovskite film layer, scribing the electron transport layer so that the electron transport layer has a plurality of spaced second scribing areas, and a portion of the electron transport layer is filled in the first scribing areas to form the electron transport layer.

[0015] Applying the technical solution of the present application, a solar cell is proposed, including a substrate, a perovskite film layer and an electron transport layer, wherein the perovskite film layer has a plurality of first scribing regions, the plurality of first scribing regions divide the perovskite film layer into a plurality of parts, a part of the electron transport layer is located in the first scribing regions, the electron transport layer has a plurality of second scribing regions, the second scribing regions divide the electron transport layer into a plurality of regions, and the projections of the second scribing regions and the first scribing regions on the surface of the substrate have at least a partial overlapping area. By forming a plurality of first scribing regions on the perovskite film layer and a plurality of second scribing regions on the hole transport layer, the contact resistance of the perovskite film layer is reduced, and in the subsequent annealing process of the solar cell, the plurality of first scribing regions release the thermal stress generated by the perovskite film layer, reduce the influence of the thermal marginal effect of annealing on the perovskite film layer, and improve the crystallinity of the perovskite film layer. The problem that the structure of the solar cell in the related art cannot form a perovskite film layer with high crystallinity after annealing is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0017] Figure 1 A schematic diagram of a three-dimensional structure of a solar cell provided in an embodiment of the present application is shown;

[0018] Figure 2 Another schematic diagram of a three-dimensional structure of a solar cell provided in an embodiment of the present application is shown;

[0019] Figure 3 A schematic flow chart of a method for preparing a solar cell provided in an embodiment of the present application is shown;

[0020] Figure 4A schematic diagram of a cross-sectional structure of a substrate after providing a substrate in a method for preparing a solar cell provided in an embodiment of the present application is shown;

[0021] Figure 5 is Figure 4 A schematic diagram of a cross-sectional structure of a substrate after a transparent conductive layer and a hole transport layer are sequentially formed on the substrate provided in the embodiment;

[0022] Figure 6 is Figure 5 Schematic diagram of the cross-sectional structure of the substrate after a perovskite film layer is formed on the hole transport layer formed in the process;

[0023] Figure 7 is Figure 6 Schematic diagram of the cross-sectional structure of the substrate after an electron transport layer is formed on the perovskite film layer formed in the process;

[0024] Figure 8 is Figure 7 A schematic diagram of a cross-sectional structure of a substrate after an electrode layer is formed on the electron transport layer formed in the process;

[0025] Fig. 9 An image of the EMC of a solar cell prepared by a method for preparing a solar cell provided in an embodiment of the present application is shown.

[0026] The above drawings include the following reference numerals:

[0027] 10. Substrate; 20. Perovskite film layer; 21. First scribing area; 30. Electron transport layer; 31. Second scribing area; 40. Hole transport layer; 41. Third scribing area; 50. Transparent conductive layer; 51. Fourth scribing area; 60. Electrode layer; 70. Fifth scribing area. DETAILED DESCRIPTION

[0028] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0029] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0030] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0031] In the prior art, the thermal annealing process of perovskite film layers is time-consuming and energy-consuming, and is incompatible with the low-temperature manufacturing required for certain devices (such as flexible PSCs on plastic substrates). In addition, the structure of the solar cell is easily heated unevenly during the annealing process, resulting in poor crystallinity of the perovskite film layer. Although some attempts to use laser annealing of perovskite film layers have been reported, high-performance PSCs based on this technology have not been achieved so far. However, these methods cause high substrate temperatures and the device efficiency is even lower than that of the control device.

[0032] Therefore, the present application studies the above problems and proposes a solar cell, such as Figure 1 and Figure 2 As shown, a substrate 10; a perovskite film layer 20, located on one side of the substrate 10, the perovskite film layer 20 having a plurality of spaced first slicing regions 21, the first slicing regions 21 dividing the perovskite film layer 20 into a plurality of parts; an electron transport layer 30, located on a side of the perovskite film layer 20 away from the substrate 10, the electron transport layer 30 having a plurality of spaced second slicing regions 31, the second slicing regions 31 dividing the electron transport layer 30 into a plurality of parts, the second slicing regions 31 and the projection of the first slicing regions 21 on the surface of the substrate 10 having an overlapping area, the second slicing regions 31 and the first slicing regions 21 corresponding one to one, and part of the electron transport layer 30 is filled in the first slicing regions 21.

[0033] The solar cell of the present application has a plurality of first scribing regions through the perovskite film layer, and the plurality of the first scribing regions divide the perovskite film layer into a plurality of parts, and a part of the electron transport layer is located in the first scribing region, and the electron transport layer has a plurality of second scribing regions, and the second scribing regions divide the electron transport layer into a plurality of regions, and the projections of the second scribing regions and the first scribing regions on the surface of the substrate have at least a partial overlapping area. By forming a plurality of first scribing regions on the perovskite film layer and a plurality of second scribing regions on the hole transport layer, the contact resistance of the perovskite film layer is reduced, and in the subsequent annealing process of the solar cell, the plurality of first scribing regions release the thermal stress generated by the perovskite film layer, reduce the influence of the thermal marginal effect of annealing on the perovskite film layer, and improve the crystallinity of the perovskite film layer. The problem that the structure of the solar cell in the related art cannot form a perovskite film layer with high crystallinity after annealing is solved.

[0034] It should be noted that Figure 1 and Figure 2 The first scribing area 21 and the second scribing area 31 are equivalent to a spacing area when they are formed, but the first scribing area 21 and the second scribing area 31 will be filled when other film layers are formed. The subsequent other scribing areas are the same as the first scribing area 21 and the second scribing area 31.

[0035] In the above optional embodiment, the above perovskite film layer can be a FAMA (methylamine / methylamino perovskite material) mixed perovskite film layer, 258mgFAI, 726mgPbI2, 13mgMABr, 44mgPbBr2, 30mgMACl precursor solution is dissolved in a mixed solvent of 1mL DMF and DMSO (volume ratio is 8:1). Then, 80:1CsPbI3 solution (1M, also dissolved in dimethylformamide DMF and dimethyl sulfoxide DMSO, ratio is 8:1) is added to the FAMA perovskite solution to obtain a final (CsPbI3)0.05(MAPbBr3)0.05(FAPbI3)0.9 mixed perovskite solution.

[0036] In some optional embodiments, such as Figure 1 and Figure 2As shown, the solar cell further includes: a hole transport layer 40, which is located on the side of the perovskite film layer 20 away from the electron transport layer 30, the hole transport layer 40 has a plurality of spaced third slicing regions 41, the third slicing regions 41 divide the hole transport layer 40 into a plurality of parts, the third slicing regions 41 are filled with the perovskite film layer 20, the third slicing regions 41 have an overlapping area with the projection of the first slicing regions 21 on the surface of the substrate 10, and the third slicing regions 41 correspond one to one with the first slicing regions 21.

[0037] In the above optional implementation, if Figure 1 and Figure 2 As shown, the hole transport layer 40, the perovskite film layer 20 and the electron transport layer 30 can be prepared by a wet process, wherein the thickness of the hole transport layer 40 can be 20-50 nm, the thickness of the perovskite film layer 20 can be 300-500 nm, and the thickness of the electron transport layer 30 can be 20-60 nm.

[0038] In some optional embodiments, such as Figure 1 and Figure 2 As shown, the solar cell further includes: a transparent conductive layer 50, located between the substrate 10 and the hole transport layer 40, the transparent conductive layer 50 having a plurality of spaced fourth scribing regions 51, the fourth scribing regions 51 dividing the transparent conductive layer 50 into a plurality of parts, the fourth scribing regions 51 being filled with the hole transport layer 40.

[0039] In the above optional implementation, if Figure 1 and Figure 2 As shown, the thickness of the transparent conductive layer 50 may be 100-200 nm, and the material of the transparent conductive layer 50 may be indium tin oxide or glass. The fourth scribing region 51 may have an overlapping region with the third scribing region 41 .

[0040] In some optional embodiments, such as Figure 1 and Figure 2 As shown, the solar cell further includes: an electrode layer 60 , which is located on a side of the electron transport layer 30 away from the perovskite film layer 20 , and a portion of the electrode layer 60 is filled in the second slicing area 31 .

[0041] In the above optional implementation, if Figure 1 and Figure 2 As shown, the thickness of the electrode layer 60 may be 100-200 nm, and the material of the electrode layer 60 may be any one or more of silver, copper and gold.

[0042] In some optional embodiments, such as Figure 1 and Figure 2 As shown, the solar cell has a plurality of spaced fifth scribing regions 70, and the fifth scribing regions 70 at least divide the multilayer film layer formed by the electron transport layer 30, the perovskite film layer 20, the hole transport layer 40 and the electrode layer 60 of the solar cell into a plurality of parts.

[0043] In the above optional implementation, if Figure 1 and Figure 2 As shown, after the preparation of each film layer of the above-mentioned solar cell is completed, the above-mentioned solar cell has a fifth slicing area to at least slicing the above-mentioned perovskite film layer 20, the above-mentioned hole transport layer 40 and the above-mentioned electrode layer 60, that is, slicing a part of the solar cell, which can reduce the loss of the solar cell during slicing and reduce the damage to the cell caused by the cutting process, thereby improving the overall performance and life of the solar cell.

[0044] In some optional embodiments, the perovskite film layer is prepared by a rapid annealing process.

[0045] In the above optional embodiment, the perovskite film layer with the first scribing area is subjected to rapid annealing, which can be closely combined with the automated production line process and is efficient. Rapid annealing and the first scribing area improve the defect that direct scribing of the resistance transmission layer and the perovskite film layer at one time will lead to a heat-affected area, thereby increasing the contact resistance of the perovskite. In this process, a Fluke Ti400 infrared thermal imager (sensitivity ≦0.05°C) can be used to monitor the surface temperature of the perovskite film layer online at 120°C to 130°C.

[0046] In some optional implementations, the laser output power of the rapid annealing is 20W to 30W.

[0047] In some optional embodiments, the laser scanning rate of the rapid annealing is 40 mm / min to 60 mm / min.

[0048] In the above optional implementation manner, the rapid annealing of the perovskite film layer may use infrared rays with a wavelength of 780nm to 1064nm, a scanning speed of 40 to 60mm / min, and an output power of 20 to 30W.

[0049] According to another embodiment of the present application, a method for preparing a solar cell is also provided. Figure 3 As shown, including:

[0050] Step S201: providing a substrate;

[0051] Step S202: forming a perovskite film layer on one side of the substrate, wherein the perovskite film layer has a plurality of spaced first scribing regions, and the first scribing regions divide the perovskite film layer into a plurality of parts;

[0052] Step S203: An electron transport layer is formed on the side of the perovskite film layer facing away from the substrate, the electron transport layer has a plurality of spaced second slicing regions, the electron transport layer is divided into a plurality of parts, the second slicing region has an overlapping region with the projection of the first slicing region on the surface of the substrate 10, the second slicing region corresponds to the first slicing region one by one, and part of the electron transport layer is filled in the first slicing region.

[0053] The present application adopts the above-mentioned method for preparing solar cells to form multiple first scribing areas on the perovskite film layer, and the multiple first scribing areas divide the perovskite film layer into multiple parts. Part of the electron transport layer is located in the above-mentioned first scribing areas, and multiple second scribing areas are formed on the above-mentioned electron transport layer. The second scribing areas divide the electron transport layer into multiple areas, and the projections of the second scribing areas and the first scribing areas on the surface of the above-mentioned substrate have at least a partial overlapping area. By forming the first scribing area on the perovskite film layer, an area is reserved for rapid annealing, so that the thermal stress generated by the perovskite film layer can be released, reducing the influence of the thermal marginal effect of laser etching on the perovskite film layer, improving the crystallinity of the perovskite film layer, and thereby improving the efficiency of the solar cell. It solves the problem that the structure of the solar cell in the related art cannot form a perovskite film layer with high crystallinity after annealing.

[0054] The exemplary embodiments of the method for preparing a solar cell provided according to the present invention will be described in more detail below in conjunction with the accompanying drawings. However, these exemplary embodiments can be implemented in a variety of different forms and should not be construed as being limited to the embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of this application thorough and complete, and to fully convey the concepts of these exemplary embodiments to those of ordinary skill in the art.

[0055] First, if Figure 4 As shown, step S201 is performed: providing a substrate 10 .

[0056] Specifically, Figure 4 As shown, the substrate 10 may be a glass substrate.

[0057] After the step of providing a substrate, as Figure 5 and Figure 6As shown, step S202 is performed: a perovskite film layer 20 is formed on one side of the substrate 10 , wherein the perovskite film layer 20 has a plurality of spaced first scribing regions 21 , and the first scribing regions 21 divide the perovskite film layer 20 into a plurality of parts.

[0058] Specifically, the steps of forming the perovskite film layer include: Figure 5 As shown, a preliminary transparent conductive layer is formed on the substrate 10, and a plurality of fourth scribing regions 51 are formed on the preliminary transparent conductive layer to form a transparent conductive layer 50, a preliminary hole transport layer is formed on the transparent conductive layer 50, the preliminary hole transport layer is partially filled in the fourth scribing regions 51, and a plurality of third scribing regions are formed on the preliminary hole transport layer to form a hole transport layer 40. Figure 6 As shown, a preliminary perovskite film layer is formed on the hole transport layer 40 , part of the preliminary perovskite film layer is filled in the third scribing area 41 , and a plurality of first scribing areas 21 are formed on the preliminary perovskite film layer to form the perovskite film layer 20 . Figure 5 Also included is a third scribing region 41, Figure 6 A fourth dicing region 51 is also included.

[0059] After the above steps of forming the perovskite film layer are completed, Figures 7 and 8 As shown, step S203 is performed: an electron transport layer 30 is formed on the side of the perovskite film layer 20 facing away from the substrate 10, the electron transport layer 30 has a plurality of spaced second slicing regions 31, the electron transport layer 30 is divided into a plurality of parts, the second slicing region 31 has an overlapping area with the projection of the first slicing region 21 on the surface of the substrate 10, the second slicing region 31 corresponds to the first slicing region 21 one by one, and part of the electron transport layer 30 is filled in the first slicing region 21.

[0060] Specifically, Figure 7 As shown, a preliminary electron transport layer is formed on the perovskite film layer 20, part of the preliminary electron transport layer is filled in the first scribing area 21, and a plurality of second scribing areas 31 are formed on the preliminary electron transport layer to form an electron transport layer 30. Figure 8 As shown, an electrode layer 60 is formed on the electron transport layer 30, and part of the electrode layer 60 is filled in the second scribing area 31. The electrode layer 60, the electron transport layer 30 and the perovskite film layer 20 of the solar cell are scribed to obtain a fifth scribing area 70 (as shown in FIG. Figure 1 shown). Figure 7 and Figure 8 Other structures not described in Figure 1 The description is consistent with .

[0061] In some optional embodiments, the steps of forming the above-mentioned perovskite film layer and the above-mentioned electron transport layer include: forming a hole transport layer on the above-mentioned substrate, scribing the above-mentioned hole transport layer so that the above-mentioned hole transport layer has a plurality of spaced third scribing areas; forming the above-mentioned perovskite film layer on the above-mentioned hole transport layer, and sequentially performing rapid annealing and scribing on the above-mentioned perovskite film layer so that the above-mentioned perovskite film layer has a plurality of spaced first scribing areas, and a portion of the above-mentioned perovskite film layer is filled in the above-mentioned third scribing areas to form the above-mentioned perovskite film layer; forming an electron transport layer on the above-mentioned perovskite film layer, scribing the above-mentioned electron transport layer so that the above-mentioned electron transport layer has a plurality of spaced second scribing areas, and a portion of the above-mentioned electron transport layer is filled in the above-mentioned first scribing areas to form the above-mentioned electron transport layer.

[0062] In the above optional implementation, the rapid annealing uses infrared light with a wavelength of 780nm to 1064nm, a scanning speed of 40 to 60mm / min, and an output power of 20-30W. The scribing uses ultraviolet light with a wavelength of 200 to 400nm, a scanning speed of 600 to 1000mm / s, and an output power of 10 to 30W.

[0063] In the above optional embodiment, during the rapid annealing process, a local temperature gradient can be generated on the perovskite grain boundary, where large grains can absorb more energy than small grains and have a higher temperature, which can induce the selective growth of large grains. However, for conventional thermal annealing, heat is transferred from the bottom substrate, transparent conductive layer and hole transport layer to the upper perovskite film layer, and the heat can be uniformly absorbed by the crystalline phase and amorphous phase of the perovskite film layer, resulting in a high nucleation seed density in the film layer after annealing, so the performance is poor. The rapid annealing method used in this application can produce larger grains than conventional thermal annealing processes, so that the grain boundary surface area and defect concentration in the perovskite film layer are reduced, so that the non-radiative carrier recombination in the perovskite film layer can be reduced, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0064] The method for preparing the solar cell of the present application will be described in detail below in combination with specific embodiments and comparative examples.

[0065] Example 1

[0066] This application proposes a method for preparing a solar cell:

[0067] Providing a substrate, wherein the thickness of the substrate is 100 nm and the material is silicon carbide;

[0068] Forming a preliminary transparent conductive layer on the substrate, scribing the preliminary transparent conductive layer to form a transparent conductive layer, wherein the transparent conductive layer has a plurality of spaced fourth scribing regions, the material of the transparent conductive layer is indium tin oxide, and the thickness is 100 nm;

[0069] Forming a preliminary hole transport layer on the substrate, scribing the preliminary hole transport layer to form a hole transport layer, so that the hole transport layer has a plurality of spaced third scribing regions, wherein the hole transport layer has a thickness of 30 nm and is made of NiO2;

[0070] The above-mentioned preliminary perovskite film layer is formed on the above-mentioned hole transport layer, and the above-mentioned preliminary perovskite film layer is subjected to rapid annealing and scribing in sequence to form the above-mentioned perovskite film layer, wherein the above-mentioned perovskite film layer has a plurality of spaced first scribing regions, and part of the above-mentioned perovskite film layer is filled in the above-mentioned third scribing region, the thickness of the perovskite film layer is 400nm, the material is FAMA, the output power of the rapid annealing is 20W, the laser scanning rate is 60mm / min, and the infrared wavelength is 1064nm;

[0071] A preliminary electron transport layer is formed on the perovskite film layer, and the preliminary electron transport layer is scribed to form the electron transport layer, wherein the electron transport layer has a plurality of spaced second scribe regions, and part of the electron transport layer is filled in the first scribe region. The thickness of the electron transport layer is 30 nm, and the material is C6.

[0072] An electrode layer is formed on the side of the electron transport layer away from the perovskite film layer, the material of the electrode layer is Ag, and the thickness is 100nm, and the solar cell is diced so that the solar cell has a fifth dicing area, and the fifth dicing area is located in the electrode layer, the perovskite film layer and the electron transport layer.

[0073] Example 2

[0074] This application proposes a method for preparing a solar cell:

[0075] Providing a substrate, wherein the thickness of the substrate is 100 nm and the material is silicon carbide;

[0076] Forming a preliminary transparent conductive layer on the substrate, scribing the preliminary transparent conductive layer to form a transparent conductive layer, wherein the transparent conductive layer has a plurality of spaced fourth scribing regions, the material of the transparent conductive layer is indium tin oxide, and the thickness is 100 nm;

[0077] Forming a preliminary hole transport layer on the substrate, scribing the preliminary hole transport layer to form a hole transport layer, so that the hole transport layer has a plurality of spaced third scribing regions, wherein the hole transport layer has a thickness of 30 nm and is made of NiO2;

[0078] The above-mentioned preliminary perovskite film layer is formed on the above-mentioned hole transport layer, and the above-mentioned preliminary perovskite film layer is subjected to rapid annealing and scribing in sequence to form the above-mentioned perovskite film layer, wherein the above-mentioned perovskite film layer has a plurality of spaced first scribing regions, and part of the above-mentioned perovskite film layer is filled in the above-mentioned third scribing region, the thickness of the perovskite film layer is 400nm, the material is FAMA, the output power of the rapid annealing is 25W, the laser scanning rate is 60mm / min, and the infrared wavelength is 1064nm;

[0079] A preliminary electron transport layer is formed on the perovskite film layer, and the preliminary electron transport layer is scribed to form the electron transport layer, wherein the electron transport layer has a plurality of spaced second scribe regions, and part of the electron transport layer is filled in the first scribe region. The thickness of the electron transport layer is 30 nm, and the material is C6.

[0080] An electrode layer is formed on the side of the electron transport layer away from the perovskite film layer, the material of the electrode layer is Ag, and the thickness is 100nm, and the solar cell is diced so that the solar cell has a fifth dicing area, and the fifth dicing area is located in the electrode layer, the perovskite film layer and the electron transport layer.

[0081] Example 3

[0082] This application proposes a method for preparing a solar cell:

[0083] Providing a substrate, wherein the thickness of the substrate is 100 nm and the material is silicon carbide;

[0084] Forming a preliminary transparent conductive layer on the substrate, scribing the preliminary transparent conductive layer to form a transparent conductive layer, wherein the transparent conductive layer has a plurality of spaced fourth scribing regions, the material of the transparent conductive layer is indium tin oxide, and the thickness is 100 nm;

[0085] Forming a preliminary hole transport layer on the substrate, scribing the preliminary hole transport layer to form a hole transport layer, so that the hole transport layer has a plurality of spaced third scribing regions, wherein the hole transport layer has a thickness of 30 nm and is made of NiO2;

[0086] The above-mentioned preliminary perovskite film layer is formed on the above-mentioned hole transport layer, and the above-mentioned preliminary perovskite film layer is subjected to rapid annealing and scribing in sequence to form the above-mentioned perovskite film layer, wherein the above-mentioned perovskite film layer has a plurality of spaced first scribing regions, and part of the above-mentioned perovskite film layer is filled in the above-mentioned third scribing region, the thickness of the perovskite film layer is 400nm, the material is FAMA, the output power of the rapid annealing is 30W, the laser scanning rate is 60mm / min, and the infrared wavelength is 1064nm;

[0087] A preliminary electron transport layer is formed on the perovskite film layer, and the preliminary electron transport layer is scribed to form the electron transport layer, wherein the electron transport layer has a plurality of spaced second scribe regions, and part of the electron transport layer is filled in the first scribe region. The thickness of the electron transport layer is 30 nm, and the material is C6.

[0088] An electrode layer is formed on the side of the electron transport layer away from the perovskite film layer, the material of the electrode layer is Ag, and the thickness is 100nm, and the solar cell is diced so that the solar cell has a fifth dicing area, and the fifth dicing area is located in the electrode layer, the perovskite film layer and the electron transport layer.

[0089] Example 4

[0090] This application proposes a method for preparing a solar cell:

[0091] Providing a substrate, wherein the thickness of the substrate is 100 nm and the material is silicon carbide;

[0092] Forming a preliminary transparent conductive layer on the substrate, scribing the preliminary transparent conductive layer to form a transparent conductive layer, wherein the transparent conductive layer has a plurality of spaced fourth scribing regions, the material of the transparent conductive layer is indium tin oxide, and the thickness is 100 nm;

[0093] Forming a preliminary hole transport layer on the substrate, scribing the preliminary hole transport layer to form a hole transport layer, so that the hole transport layer has a plurality of spaced third scribing regions, wherein the hole transport layer has a thickness of 30 nm and is made of NiO2;

[0094] The above-mentioned preliminary perovskite film layer is formed on the above-mentioned hole transport layer, and the above-mentioned preliminary perovskite film layer is subjected to rapid annealing and scribing in sequence to form the above-mentioned perovskite film layer, wherein the above-mentioned perovskite film layer has a plurality of spaced first scribing regions, and part of the above-mentioned perovskite film layer is filled in the above-mentioned third scribing region, the thickness of the perovskite film layer is 400nm, the material is FAMA, the output power of the rapid annealing is 25W, the laser scanning rate is 42mm / min, and the infrared wavelength is 1064nm;

[0095] A preliminary electron transport layer is formed on the perovskite film layer, and the preliminary electron transport layer is scribed to form the electron transport layer, wherein the electron transport layer has a plurality of spaced second scribe regions, and part of the electron transport layer is filled in the first scribe region. The thickness of the electron transport layer is 30 nm, and the material is C6.

[0096] An electrode layer is formed on the side of the electron transport layer away from the perovskite film layer, the material of the electrode layer is Ag, and the thickness is 100nm, and the solar cell is diced so that the solar cell has a fifth dicing area, and the fifth dicing area is located in the electrode layer, the perovskite film layer and the electron transport layer.

[0097] Example 5

[0098] This application proposes a method for preparing a solar cell:

[0099] Providing a substrate, wherein the thickness of the substrate is 100 nm and the material is silicon carbide;

[0100] Forming a preliminary transparent conductive layer on the substrate, scribing the preliminary transparent conductive layer to form a transparent conductive layer, wherein the transparent conductive layer has a plurality of spaced fourth scribing regions, the material of the transparent conductive layer is indium tin oxide, and the thickness is 100 nm;

[0101] Forming a preliminary hole transport layer on the substrate, scribing the preliminary hole transport layer to form a hole transport layer, so that the hole transport layer has a plurality of spaced third scribing regions, wherein the hole transport layer has a thickness of 30 nm and is made of NiO2;

[0102] The above-mentioned preliminary perovskite film layer is formed on the above-mentioned hole transport layer, and the above-mentioned preliminary perovskite film layer is subjected to rapid annealing and scribing in sequence to form the above-mentioned perovskite film layer, wherein the above-mentioned perovskite film layer has a plurality of spaced first scribing regions, and part of the above-mentioned perovskite film layer is filled in the above-mentioned third scribing region, the thickness of the perovskite film layer is 400nm, the material is FAMA, the output power of the rapid annealing is 25W, the laser scanning rate is 51mm / min, and the infrared wavelength is 1064nm;

[0103] A preliminary electron transport layer is formed on the perovskite film layer, and the preliminary electron transport layer is scribed to form the electron transport layer, wherein the electron transport layer has a plurality of spaced second scribe regions, and part of the electron transport layer is filled in the first scribe region. The thickness of the electron transport layer is 30 nm, and the material is C6.

[0104] An electrode layer is formed on the side of the electron transport layer away from the perovskite film layer, the material of the electrode layer is Ag, and the thickness is 100nm, and the solar cell is diced so that the solar cell has a fifth dicing area, and the fifth dicing area is located in the electrode layer, the perovskite film layer and the electron transport layer.

[0105] Example 6

[0106] This application proposes a method for preparing a solar cell:

[0107] Providing a substrate, wherein the thickness of the substrate is 100 nm and the material is silicon carbide;

[0108] Forming a preliminary transparent conductive layer on the substrate, scribing the preliminary transparent conductive layer to form a transparent conductive layer, wherein the transparent conductive layer has a plurality of spaced fourth scribing regions, the material of the transparent conductive layer is indium tin oxide, and the thickness is 100 nm;

[0109] Forming a preliminary hole transport layer on the substrate, scribing the preliminary hole transport layer to form a hole transport layer, so that the hole transport layer has a plurality of spaced third scribing regions, wherein the hole transport layer has a thickness of 30 nm and is made of NiO2;

[0110] The above-mentioned preliminary perovskite film layer is formed on the above-mentioned hole transport layer, and the above-mentioned preliminary perovskite film layer is subjected to rapid annealing and scribing in sequence to form the above-mentioned perovskite film layer, wherein the above-mentioned perovskite film layer has a plurality of spaced first scribing regions, and part of the above-mentioned perovskite film layer is filled in the above-mentioned third scribing region, the thickness of the perovskite film layer is 400nm, the material is FAMA, the output power of the rapid annealing is 25W, the laser scanning rate is 60mm / min, and the infrared wavelength is 1064nm;

[0111] A preliminary electron transport layer is formed on the perovskite film layer, and the preliminary electron transport layer is scribed to form the electron transport layer, wherein the electron transport layer has a plurality of spaced second scribe regions, and part of the electron transport layer is filled in the first scribe region. The thickness of the electron transport layer is 30 nm, and the material is C6.

[0112] An electrode layer is formed on the side of the electron transport layer away from the perovskite film layer, the material of the electrode layer is Ag, and the thickness is 100nm, and the solar cell is diced so that the solar cell has a fifth dicing area, and the fifth dicing area is located in the electrode layer, the perovskite film layer and the electron transport layer.

[0113] Comparative Example 1

[0114] This application proposes a method for preparing a solar cell:

[0115] Providing a substrate, wherein the thickness of the substrate is 100 nm and the material is silicon carbide;

[0116] Forming a preliminary transparent conductive layer on the substrate, scribing the preliminary transparent conductive layer to form a transparent conductive layer, wherein the transparent conductive layer has a plurality of spaced fourth scribing regions, the material of the transparent conductive layer is indium tin oxide, and the thickness is 100 nm;

[0117] Forming a preliminary hole transport layer on the substrate, scribing the preliminary hole transport layer to form a hole transport layer, so that the hole transport layer has a plurality of spaced third scribing regions, wherein the hole transport layer has a thickness of 30 nm and is made of NiO2;

[0118] The preliminary perovskite film layer is formed on the hole transport layer, and the preliminary perovskite film layer is heated, annealed and scribed in sequence to form the perovskite film layer, wherein the perovskite film layer has a plurality of spaced first scribing regions, and part of the perovskite film layer is filled in the third scribing region, the perovskite film layer has a thickness of 400 nm, is made of FAMA, and the annealing temperature is 1000 degrees Celsius;

[0119] A preliminary electron transport layer is formed on the perovskite film layer, and the preliminary electron transport layer is scribed to form the electron transport layer, wherein the electron transport layer has a plurality of spaced second scribe regions, and part of the electron transport layer is filled in the first scribe region. The thickness of the electron transport layer is 30 nm, and the material is C6.

[0120] An electrode layer is formed on the side of the electron transport layer away from the perovskite film layer, the material of the electrode layer is Ag, and the thickness is 100nm, and the solar cell is diced so that the solar cell has a fifth dicing area, and the fifth dicing area is located in the electrode layer, the perovskite film layer and the electron transport layer.

[0121] The performance of the solar cells prepared by the solar cell preparation methods in the above-mentioned Examples 1 to 6 and Comparative Example 1 was tested, and the test results are as follows:

[0122] Table 1

[0123]

[0124] It can be seen from the experimental data in the above table that the technical solutions of rapid annealing and pre-slicing on the perovskite film layer adopted in Examples 1 to 6 of the present application have improved Voc (V), Jsc (mA / cm2), FF (%) and PCE (%) compared with Comparative Example 1. Fig. 9 As shown, the perovskite film layer produces larger grains (basically greater than or equal to 5 μm) after the process annealing of the above embodiments 1 to 6, with better crystallization performance and fewer defects, reducing non-radiative carrier recombination in the perovskite film layer, thereby improving the photoelectric conversion efficiency of the solar cell.

[0125] From the above embodiments of the solar cell and the method for preparing the same, it can be seen that the solar cell and the method for preparing the same have the following beneficial effects:

[0126] 1) The solar cell proposed in the present application includes a substrate, a perovskite film layer and an electron transport layer, wherein the perovskite film layer has a plurality of first scribing regions, the plurality of first scribing regions divide the perovskite film layer into a plurality of parts, a part of the electron transport layer is located in the first scribing region, the electron transport layer has a plurality of second scribing regions, the second scribing regions divide the electron transport layer into a plurality of regions, and the projections of the second scribing regions and the first scribing regions on the surface of the substrate have at least a partial overlapping region. By forming a plurality of first scribing regions on the perovskite film layer and a plurality of second scribing regions on the hole transport layer, the contact resistance of the perovskite film layer is reduced, and in the subsequent annealing process of the solar cell, the plurality of first scribing regions release the thermal stress generated by the perovskite film layer, reduce the influence of the thermal marginal effect of annealing on the perovskite film layer, and improve the crystallinity of the perovskite film layer. The problem that the structure of the solar cell in the related art cannot form a perovskite film layer with high crystallinity after annealing is solved.

[0127] 2) The method for preparing the perovskite film layer proposed in the present application forms a plurality of first slicing regions on the perovskite film layer, wherein the plurality of first slicing regions divide the perovskite film layer into a plurality of parts, a portion of the electron transport layer is located in the first slicing regions, and a plurality of second slicing regions are formed on the electron transport layer, wherein the second slicing regions divide the electron transport layer into a plurality of regions, and the projections of the second slicing regions and the first slicing regions on the surface of the substrate have at least a partial overlapping area. By forming the first slicing region on the perovskite film layer, an area is reserved for rapid annealing, so that the thermal stress generated by the perovskite film layer can be released, reducing the influence of the thermal marginal effect of laser etching on the perovskite film layer, improving the crystallinity of the perovskite film layer, and thereby improving the efficiency of the solar cell. The problem that the structure of the solar cell in the related art cannot form a perovskite film layer with high crystallinity after annealing is solved.

[0128] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0129] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent substitution, improvement, etc. made in the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A solar cell, characterized in that: include: substrate; A perovskite film layer, located on one side of the substrate, the perovskite film layer having a plurality of spaced first scribing regions, the first scribing regions dividing the perovskite film layer into a plurality of parts; An electron transport layer is located on the side of the perovskite film layer away from the substrate, the electron transport layer has a plurality of spaced second slicing areas, the second slicing areas divide the electron transport layer into a plurality of parts, the second slicing areas and the projections of the first slicing areas on the surface of the substrate have an overlapping area, the second slicing areas correspond to the first slicing areas one by one, and part of the electron transport layer is filled in the first slicing areas.

2. The solar cell according to claim 1, characterized in that The solar cell also includes: a hole transport layer, which is located on the side of the perovskite film layer away from the electron transport layer, the hole transport layer has a plurality of spaced third slicing regions, the third slicing regions divide the hole transport layer into a plurality of parts, the third slicing regions are filled with the perovskite film layer, the third slicing regions have an overlapping area with the projection of the first slicing regions on the surface of the substrate, and the third slicing regions correspond one to one to the first slicing regions.

3. The solar cell according to claim 2, characterized in that: The solar cell further includes: a transparent conductive layer located between the substrate and the hole transport layer, the transparent conductive layer having a plurality of spaced fourth scribing regions, the fourth scribing regions dividing the transparent conductive layer into a plurality of parts, the fourth scribing regions being filled with the hole transport layer.

4. The solar cell according to claim 3, characterized in that: The solar cell further includes: an electrode layer located on a side of the electron transport layer away from the perovskite film layer, and a portion of the electrode layer is filled in the second slicing area.

5. The solar cell according to claim 4, characterized in that: The solar cell has a plurality of spaced fifth scribing regions, and the fifth scribing regions at least divide the multilayer film layer formed by the electron transport layer, the perovskite film layer, the hole transport layer and the electrode layer of the solar cell into a plurality of parts.

6. The solar cell according to any one of claims 1 to 5, characterized in that The perovskite film layer is prepared by adopting a rapid annealing process.

7. The solar cell according to claim 6, characterized in that: The laser output power of the rapid annealing is 20W-30W.

8. The solar cell according to claim 6, characterized in that: The laser scanning rate of the rapid annealing is 40 mm / min to 60 mm / min.

9. A method for preparing a solar cell according to any one of claims 1 to 8, characterized in that: include: providing a substrate; forming a perovskite film layer on one side of the substrate, wherein the perovskite film layer has a plurality of spaced first scribing regions, and the first scribing regions divide the perovskite film layer into a plurality of parts; An electron transport layer is formed on the side of the perovskite film layer facing away from the substrate, and the electron transport layer has a plurality of spaced second slicing regions, dividing the electron transport layer into a plurality of parts, the second slicing regions and the projections of the first slicing regions on the surface of the substrate have an overlapping area, the second slicing regions correspond to the first slicing regions one-to-one, and part of the electron transport layer is filled in the first slicing regions.

10. The preparation method according to claim 9, characterized in that: The steps of forming the perovskite film layer and the electron transport layer include: forming a hole transport layer on the substrate, and scribing the hole transport layer so that the hole transport layer has a plurality of spaced third scribing regions; Forming the perovskite film layer on the hole transport layer, and sequentially performing rapid annealing and scribing on the perovskite film layer, so that the perovskite film layer has a plurality of spaced first scribing regions, and a portion of the perovskite film layer is filled in the third scribing region, to form the perovskite film layer; An electron transport layer is formed on the perovskite film layer, and the electron transport layer is scribed so that the electron transport layer has a plurality of spaced second scribe areas, and part of the electron transport layer is filled in the first scribe area to form the electron transport layer.

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