Driving substrate and preparation method thereof, and preparation method of display panel

Abstract

The invention provides a driving substrate and a preparation method thereof, and a preparation method of a display panel. According to the invention, the overhanging width and the extension width of the isolation structure surrounding different pixel grooves are differentiated to match the corrosion condition of the conductive part in the preparation process of the sub-pixels arranged in the pixel grooves, so that the width of the corroded conductive part is compensated; therefore, the overhanging width of each isolation structure in a finished product is ensured to be the same. Furthermore, the difference value between the first overhang width and the second overhang width and the difference value between the first extension width and the second extension width are enabled to be the same, so that the difference value between the overhang width and the extension width in a single isolation structure is ensured to be unchanged, the evaporation angles of the sub-pixels can be further ensured to be consistent during subsequent evaporation of the sub-pixels, and the evaporation efficiency of the sub-pixels is improved. Therefore, the lap joint effect consistency of the cathode of each sub-pixel and the conductive part is facilitated, and the conductive lap joint effect is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a driving substrate and a preparation method thereof, and a preparation method of a display panel. Background Art

[0002] With the development of display technology, in order to reduce costs, the cathode and light-emitting layer in the OLED (Organic Light-Emitting Diode) display device are formed by removing the fine mask plate. The cathode is formed by evaporation during the formation process. The cathode is overlapped with the isolation structure to achieve electrical connection between the cathodes.

[0003] However, this evaporation method may cause a risk of poor overlap between the cathode and the isolation structure. Summary of the invention

[0004] The main technical problem solved by the present application is to provide a driving substrate and a preparation method thereof, and a preparation method of a display panel, so as to solve the problem of poor overlap between the cathode and the isolation structure in the prior art.

[0005] In order to solve the above technical problems, the first technical solution provided by the present application is: to provide a method for preparing a driving substrate, comprising:

[0006] Providing a driving layer, an anode metal layer, and a pixel definition layer stacked in sequence;

[0007] forming an isolation structure on a side of the pixel definition layer away from the driving layer;

[0008] Among them, the isolation structure is arranged to form a pixel groove; the isolation structure includes a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends the conductive part in the direction close to the pixel groove; in the wall thickness direction of the isolation structure, the width of the conductive part is equal; it is defined that the width of the eaves structure beyond the top of the conductive part in the wall thickness direction of the isolation structure is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width; the pixel groove includes a first pixel groove and a second pixel groove; in the isolation structure surrounding the first pixel groove, the overhang width is defined as the first overhang width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel groove, the overhang width is defined as the second overhang width, and the extension width is defined as the second extension width; the difference between the first overhang width and the second overhang width is a first preset fixed value, and the first preset fixed value is a positive number; the difference between the first extension width and the second extension width is the first preset fixed value.

[0009] Wherein, an isolation structure is formed on a side of the pixel definition layer away from the driving layer, including:

[0010] forming a conductive layer and an eaves layer in sequence on a side of the pixel definition layer away from the driving layer;

[0011] The eaves layer and the conductive layer are etched to form a pixel groove; the sidewall of the pixel groove forms an isolation structure.

[0012] The step of etching the eaves layer and the conductive layer to form a pixel groove comprises:

[0013] Determine an area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the area to be etched to form a prefabricated pixel groove; define the prefabricated pixel groove used to form the first pixel groove as a first prefabricated pixel groove, and define the prefabricated pixel groove used to form the second pixel groove as a second prefabricated pixel groove;

[0014] Determining a mask area on the unetched eaves layer, and removing the eaves layer outside the mask area so that the prefabricated pixel grooves form pixel grooves;

[0015] Among them, in the wall thickness direction of the conductive layer, the spacing between the inner edge of the eaves layer surrounding the first prefabricated pixel groove and the side edges of the adjacent mask areas close to each other is the first spacing, and the spacing between the inner edge of the eaves layer surrounding the second prefabricated pixel groove and the side edges of the adjacent mask areas close to each other is the second spacing,

[0016] The difference between the second interval and the first interval is a first preset fixed value.

[0017] The step of etching the eaves layer and the conductive layer to form a pixel groove comprises:

[0018] Determine an area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the area to be etched to form a prefabricated pixel groove; define the prefabricated pixel groove used to form the first pixel groove as the first prefabricated pixel groove, the prefabricated pixel groove used to form the second pixel groove as the second prefabricated pixel groove, and the prefabricated pixel groove used to form the third pixel groove as the third prefabricated pixel groove;

[0019] Determining a mask area on the unetched eaves layer, and removing the eaves layer outside the mask area so that the prefabricated pixel grooves form pixel grooves;

[0020] Wherein, in the wall thickness direction of the conductive layer, the spacing between the inner edge of the eaves layer surrounding the first prefabricated pixel groove and the side edges of the adjacent mask regions close to each other is the first spacing, the spacing between the inner edge of the eaves layer surrounding the second prefabricated pixel groove and the side edges of the adjacent mask regions close to each other is the second spacing, and the spacing between the inner edge of the eaves layer surrounding the third prefabricated pixel groove and the side edges of the adjacent mask regions close to each other is the third spacing;

[0021] The difference between the second spacing and the first spacing is a first preset fixed value, and the difference between the third spacing and the second spacing is a second preset fixed value.

[0022] In order to solve the above technical problems, the second technical solution provided by the present application is: to provide a driving substrate, which is prepared by the above-mentioned driving substrate preparation method; wherein, the driving substrate comprises a driving layer, an anode metal layer, a pixel definition layer and an isolation structure which are stacked in sequence; the isolation structure is arranged to surround a pixel groove; the isolation structure comprises a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends a conductive part in a direction close to the pixel groove; and the width of the conductive part is equal in the wall thickness direction of the isolation structure;

[0023] Wherein, it is defined that in the wall thickness direction of the isolation structure, the width of the eaves structure beyond the top of the conductive part is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width;

[0024] The pixel slots include a first pixel slot and a second pixel slot;

[0025] In the isolation structure surrounding the first pixel groove, the overhang width is defined as a first overhang width, and the extension width is defined as a first extension width;

[0026] In the isolation structure surrounding the second pixel groove, the overhang width is defined as a second overhang width, and the extension width is defined as a second extension width;

[0027] The difference between the first overhang width and the second overhang width is a first preset fixed value, and the first preset fixed value is a positive number;

[0028] The difference between the first extension width and the second extension width is a first preset fixed value.

[0029] Among them, the pixel groove also includes a third pixel groove. In the isolation structure surrounding the third pixel groove, the overhang width is defined as the third overhang width, and the extension width is defined as the third extension width; the difference between the second overhang width and the third overhang width is the second preset fixed value; the difference between the second extension width and the third extension width is the second preset fixed value; the second preset fixed value is a positive number.

[0030] The first preset fixed value is equal to the second preset fixed value.

[0031] Wherein, the preset fixed value is less than or equal to 3 microns and greater than or equal to 1 micron;

[0032] In a direction perpendicular to the pixel definition layer, the thickness of the eaves structure is 0.1 micrometer to 0.3 micrometer, and the thickness of the conductive part is 0.6 micrometer to 1.5 micrometer; the eaves structure has insulation properties.

[0033] The anode metal layer includes a plurality of anodes arranged at intervals; the pixel grooves are arranged corresponding to the anodes and cover the areas where the corresponding anodes are located.

[0034] In order to solve the above technical problems, the third technical solution provided by the present application is: to provide a method for preparing a display panel, which includes:

[0035] A driving substrate is provided; the driving substrate is the driving substrate mentioned above;

[0036] Sub-pixels are formed by evaporation in the pixel groove, and the cathode of the sub-pixel is overlapped with the conductive part; the sub-pixel includes a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in the first pixel groove, and the second sub-pixel is formed in the second pixel groove.

[0037] Beneficial effects of the present application: Different from the prior art, the present application provides a driving substrate and a preparation method thereof, and a preparation method of a display panel. The preparation method of the driving substrate comprises: providing a driving layer, an anode metal layer, and a pixel definition layer stacked in sequence; forming an isolation structure on a side of the pixel definition layer away from the driving layer; wherein the isolation structure surrounds and forms a pixel groove; the isolation structure comprises a conductive portion and an eaves structure stacked in sequence; the eaves structure extends a conductive portion in a direction close to the pixel groove; in the wall thickness direction of the isolation structure, the width of the conductive portion is equal; in the wall thickness direction of the isolation structure, the eaves structure is defined The width beyond the top of the conductive part is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width; the pixel slot includes a first pixel slot and a second pixel slot; in the isolation structure surrounding the first pixel slot, the overhang width is defined as the first overhang width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel slot, the overhang width is defined as the second overhang width, and the extension width is defined as the second extension width; the difference between the first overhang width and the second overhang width is a first preset fixed value, and the first preset fixed value is a positive number; the difference between the first extension width and the second extension width is the first preset fixed value. By differentiating the overhang widths and extension widths of the isolation structures surrounding different pixel grooves, the corrosion of the conductive part in the preparation process of the sub-pixels arranged in the pixel grooves can be matched, so as to compensate for the width of the corroded conductive part to ensure that the overhang widths of each isolation structure in the final product are the same; further, by making the difference between the first overhang width and the second overhang width the same as the difference between the first extension width and the second extension width, the difference between the overhang width and the extension width in a single isolation structure remains unchanged, so that when the sub-pixels are subsequently evaporated, the evaporation angles of each sub-pixel can be further ensured to be consistent, which is beneficial to the consistency of the overlapping effect between the cathode and the conductive part of each sub-pixel to improve the conductive overlapping effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technical workers in this field, other drawings can be obtained based on these drawings without any creative work.

[0039] Figure 1 is a structural schematic diagram of an embodiment of a driving substrate provided by the present application;

[0040] Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure at AA in the middle;

[0041] Figure 3 is a structural schematic diagram of a second embodiment of a driving substrate provided by the present application;

[0042] Figure 4 It is a schematic diagram of the arrangement structure of a pixel groove and an isolation structure according to an embodiment of the present application;

[0043] Figure 5 It is a schematic flow chart of a first embodiment of a method for preparing a drive substrate provided in the present application;

[0044] Figure 6 yes Figure 5 The structural diagram corresponding to step S100;

[0045] Figure 7 yes Figure 5 A schematic flow chart of an implementation method of step S200;

[0046] Figure 8 yes Figure 7 The structural schematic diagram corresponding to step S10;

[0047] Fig. 9 yes Figure 7 A schematic diagram of a flow chart of an implementation method of step S20;

[0048] Fig.10 yes Fig. 9 A schematic flow chart of an implementation method of step S211;

[0049] Fig.11 yes Fig.10 Schematic diagram of the structure corresponding to steps S2111 to S2114

[0050] Fig.12 yes Fig. 9 A schematic flow chart of an implementation method of step S212;

[0051] Fig.13 yes Fig.12The structural diagram corresponding to steps S2121 to S2123;

[0052] Fig.14 yes Figure 7 A schematic diagram of another implementation of step S20;

[0053] Fig.15 yes Fig.14 The structural diagram corresponding to step S221 in FIG.

[0054] Fig.16 yes Fig.14 The structural diagram corresponding to step S222 in FIG.

[0055] Fig.17 yes Figure 5 A schematic diagram of the structure corresponding to step 300;

[0056] Fig.18 It is a schematic diagram of a process of an embodiment of a method for manufacturing a display panel provided in the present application;

[0057] Fig.19 yes Fig.18 The structural schematic diagram corresponding to step S1 in FIG.

[0058] Fig. 20 yes Fig.18 A schematic flow chart of an implementation method of step S2 in FIG.

[0059] Fig.21 yes Fig. 20 A schematic flow chart of an implementation method of step S201;

[0060] Fig. 22 yes Fig.21 The structural diagram corresponding to steps S2011 and S2012;

[0061] Fig.23 yes Fig. 20 A schematic flow chart of an implementation method of step S202;

[0062] Fig.24 yes Fig.23 A schematic diagram of the structure corresponding to steps S2021 and S2022;

[0063] Fig.25 yes Fig.18 A schematic flow chart of another implementation of step S2;

[0064] Fig.26 yes Fig.25 The structural diagram corresponding to steps S201 and S202;

[0065] Fig. 27 yes Fig.25A schematic flow chart of an implementation method of step S203;

[0066] Fig.28 yes Fig. 27 Schematic diagram of the structure corresponding to steps S2031 and S2032.

[0067] Description of Figure Numbers:

[0068] 100, driving substrate; 10, driving layer; 11, flat layer; 20, anode metal layer; 21, anode; 30, pixel definition layer; 31, pixel opening; 40, isolation structure; 40A, inner wall; 40B, outer wall; 41, conductive part; 42, eaves structure; 411, first isolation structure; 412, second isolation structure; 413, third isolation structure; 50, pixel slot; 51, first pixel slot; 52, second pixel slot; 53, third pixel slot; 54, prefabricated pixel slot; 541, first prefabricated pixel slot; 542, second prefabricated pixel slot; 543, third prefabricated pixel slot; d1, first overhang width; d2, second overhang width; d3, third overhang width; w1, first extension width; w2, second extension width; w3, third extension width; L1, first interval Distance; L2, second spacing; L3, third spacing; 410, conductive layer; 420, eaves layer; 60, sub-pixel; 61, light-emitting layer; 62, cathode; 60A, first sub-pixel; 60B, second sub-pixel; 60C, third sub-pixel; 610, light-emitting material layer; 620, cathode material layer; 71, area to be etched; 72, mask area; 73, first exposed area; 74, second exposed area; 75, third exposed area; 76, fourth exposed area; 81, first photoresist layer; 82, second photoresist layer; 83, third photoresist layer; 84, fourth photoresist layer; 85, fifth photoresist layer; 86, fifth photoresist layer; 90, etching protection layer; 91, first etching protection layer; 92, second etching protection layer; 93, third etching protection layer; 200, display panel. DETAILED DESCRIPTION

[0069] The scheme of the embodiment of the present application is described in detail below in conjunction with the drawings of the specification.

[0070] In the following description, for the purpose of explanation rather than limitation, specific details such as specific system structures, interfaces, and technologies are provided to facilitate a thorough understanding of the present application.

[0071] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technical workers in the field without making creative work are within the scope of protection of this application.

[0072] The terms "first", "second", "third" in this application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of the features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In the embodiments of this application, all directional indications (such as up, down, left, right, front, back...) are only used to explain the relative position relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the steps or units listed, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0073] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0074] In the prior art, in the process of evaporating sub-pixels by removing the fine mask plate, an isolation structure is required to isolate the sub-pixels. The isolation structure includes a conductive part and an eaves structure, and the cathode of the sub-pixel overlaps with the conductive part to achieve electrical connection between the cathodes. The eaves structure is used to adjust the evaporation angle of the evaporation material so that the cathode can achieve good overlap with the conductive part.

[0075] However, due to the difference in the light-emitting layers of sub-pixels of different colors, sub-pixels of different colors need to be prepared successively. After the light-emitting layer and cathode of a sub-pixel of one color are vapor-deposited on the entire surface, only the light-emitting layer and cathode at the location of the sub-pixel of this color are retained, and the light-emitting layer and cathode of the sub-pixel of this color at the location of the sub-pixels of other colors need to be removed. Then, photoresist is used for exposure and development, and the light-emitting layer and cathode of the sub-pixel of another color are vapor-deposited on the entire surface, and only the light-emitting layer and cathode at the location of the sub-pixel of this color are retained, and the light-emitting layer and cathode of the sub-pixel of this color at the location of the sub-pixels of other colors need to be removed. Repeat the above steps to vapor-deposit the sub-pixels of other colors by analogy. In the process of removing the cathode, an etching solution is used to react with it to remove the cathode. However, while removing the cathode, the etching solution will also react with the conductive part, causing the conductive part to be corroded and its width to be narrowed. When the width of the conductive portion becomes narrower, it is not conducive to the overlap between the cathode and the conductive portion during the subsequent film deposition process of the sub-pixel, resulting in invalid overlap, inability to connect the electrical signal, and affecting the luminescence of the sub-pixel.

[0076] See also Figure 1 and Figure 2 , Figure 1 is a schematic structural diagram of an embodiment of a driving substrate provided by the present application, Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure at AA in the middle.

[0077] In order to solve the above technical problems, the present application provides a driving substrate 100. The driving substrate 100 includes a driving layer 10, an anode metal layer 20, a pixel definition layer 30 and an isolation structure 40 which are stacked in sequence. The isolation structure 40 surrounds a pixel groove 50. The isolation structure 40 includes a conductive portion 41 and an eaves structure 42 which are stacked in sequence. The eaves structure 42 extends the conductive portion 41 in a direction close to the pixel groove 50. In the wall thickness direction of the isolation structure 40, the width of the conductive portion 41 is equal. In the wall thickness direction of the isolation structure 40, the width of the eaves structure 42 beyond the top of the conductive portion 41 is defined as the overhang width, and the width of the eaves structure 42 beyond the bottom of the conductive portion 41 is defined as the extension width. The pixel groove 50 includes a first pixel groove 51 and a second pixel groove 52. In the isolation structure 40 surrounding the first pixel groove 51, the overhang width is defined as the first overhang width d1, and the extension width is defined as the first extension width w1. In the isolation structure 40 surrounding the second pixel groove 52, the overhang width is defined as the second overhang width d2, and the extension width is defined as the second extension width w2. The difference between the first overhang width d1 and the second overhang width d2 is a first preset fixed value, and the first preset fixed value is a positive number. The difference between the first extension width w1 and the second extension width w2 is the first preset fixed value.

[0078] By making the overhang width of the isolation structure 40 surrounding different pixel grooves 50 different, and the extension width different, so as to match the sub-pixel 60 (see Fig. 22 ) in the preparation process of the conductive portion 41, thereby compensating the width of the corroded conductive portion 41 to ensure that the overhang widths of each isolation structure 40 in the final product are the same; further, by making the difference between the first overhang width d1 and the second overhang width d2 and the difference between the first extension width w1 and the second extension width w2 the same, the difference between the overhang width and the extension width in a single isolation structure 40 is ensured to remain unchanged, so that when the sub-pixel 60 is subsequently evaporated, the evaporation angle of each sub-pixel 60 can be further ensured to be consistent, which is beneficial to the cathode 62 of each sub-pixel 60 (see Fig. 22 ) and the overlapping effect of the conductive portion 41 to improve the conductive overlapping effect.

[0079] It should be noted that the driving substrate 100 in the embodiment of the present application is an intermediate product in the process of preparing the display panel, and the sub-pixels 60 in the subsequent evaporation display panel are evaporated on the driving substrate 100.

[0080] The driving layer 10 is electrically connected to the anode metal layer 20 and is used to drive the sub-pixels 60 in the display panel to emit light. The structure and material of the driving layer 10 are not limited here and can be selected according to actual needs.

[0081] A flat layer 11 is further provided between the driving layer 10 and the anode metal layer 20 . The material of the flat layer 11 is not limited and can be selected according to actual needs.

[0082] The anode metal layer 20 includes a plurality of anodes 21 disposed at intervals. The pixel groove 50 is disposed corresponding to the anode 21 and covers the area where the corresponding anode 21 is located. The anode 21 is an electrode of the sub-pixel 60.

[0083] The pixel slot 50 is provided in correspondence with the anode 21, and covers the area where the corresponding anode 21 is located. It can be understood that one pixel slot 50 is provided in correspondence with at least one anode 21, and the orthographic projection of the pixel slot 50 on the driving layer 10 covers the orthographic projection of the corresponding anode 21 on the driving layer 10. When the pixel slot 50 is provided in correspondence with one anode 21, the orthographic projection of the pixel slot 50 on the driving layer 10 covers the orthographic projection of the corresponding one anode 21 on the driving layer 10. When the pixel slot 50 is provided in correspondence with multiple anodes 21, the orthographic projection of the pixel slot 50 on the driving layer 10 covers the orthographic projection of the corresponding multiple anodes 21 on the driving layer 10.

[0084] In this embodiment, the configuration in which one pixel groove 50 corresponds to one anode 21 is mainly taken as an example for description.

[0085] The pixel definition layer 30 may be an inorganic material, such as silicon oxide, silicon nitride, or silicon oxide nitride. The thickness of the pixel definition layer 30 is 0.2 micrometers to 1 micrometer. In a specific embodiment, the thickness of the pixel definition layer 30 is 0.4 micrometers to 0.6 micrometers.

[0086] In other embodiments, the pixel definition layer 30 may be other materials and / or the thickness of the pixel definition layer 30 may be other values.

[0087] The isolation structure 40 surrounds the pixel groove 50, and it can be understood that the sidewall of the pixel groove 50 is the isolation structure 40. The isolation structure 40 is a ring-shaped structure.

[0088] In this embodiment, in the outer side wall 40B of the isolation structure 40 , the outer wall surface of the eave structure 42 and the outer wall surface of the conductive portion 41 are aligned in a direction perpendicular to the pixel definition layer 30 .

[0089] In the wall thickness direction of the isolation structure 40, the widths of the conductive parts 41 are all equal. That is to say, in the embodiment of the present application, the width of each conductive part 41 is ensured to remain unchanged, and the width of the eaves structure 42 is adjusted to differentiate the overhang widths and the extension widths of the isolation structures 40 surrounding different pixel grooves 50, thereby compensating for the width of the corroded conductive part 41 to ensure that the overhang widths of each isolation structure 40 in the final product are the same.

[0090] The eaves structure 42 extends the conductive portion 41 in the direction close to the pixel groove 50, so that when the sub-pixel 60 is subsequently evaporated in the pixel groove 50, the evaporation angle can be adjusted through the inner edge of the eaves structure 42. It should be understood that in the wall thickness direction of the isolation structure 40, the greater the width of the conductive portion 41 extended from the eaves structure 42 in the direction close to the pixel groove 50, the less likely the cathode 62 of the evaporated sub-pixel 60 is to overlap with the conductive portion 41.

[0091] It is defined that the width of the eaves structure 42 beyond the top of the conductive part 41 in the wall thickness direction of the isolation structure 40 is the overhang width, and the width of the eaves structure 42 beyond the bottom of the conductive part 41 is the extension width. That is, in the wall thickness direction of the isolation structure 40, the distance between the inner edge of the lower surface of the eaves structure 42 and the inner edge of the upper surface of the conductive part 41 is the overhang width, and the distance between the inner edge of the lower surface of the eaves structure 42 and the inner edge of the lower surface of the conductive part 41 is the extension width.

[0092] It should be noted that the inner side and the outer side in the embodiment of the present application refer to two opposite sides in the wall thickness direction of the isolation structure 40 .

[0093] The pixel slot 50 includes a first pixel slot 51 and a second pixel slot 52 . It should be noted that the first pixel slot 51 and the second pixel slot 52 in the embodiment of the present application are respectively used to accommodate sub-pixels 60 of different colors.

[0094] The pixel slots 50 include at least two types of pixel slots 50 , and only two types of pixel slots 50 are taken as examples for description.

[0095] There is no limitation on the shapes and sizes of the first pixel slot 51 and the second pixel slot 52 , and they can be selected according to actual needs.

[0096] In the isolation structure 40 surrounding the first pixel groove 51, the overhang width is defined as the first overhang width d1, and the extension width is defined as the first extension width w1, that is, the overhang width in the isolation structure 40 surrounding the first pixel groove 51 is the first overhang width d1, and the extension width in the isolation structure 40 surrounding the first pixel groove 51 is the first extension width w1.

[0097] The first overhang width d1 is greater than or equal to 0.4 micrometers and less than or equal to 1 micrometer, so as to better overlap the cathode 62 in the sub-pixel 60 with the conductive portion 41 and to connect the light-emitting layers 61 (see Fig. 22 )cut off.

[0098] In the isolation structure 40 surrounding the second pixel groove 52, the overhang width is defined as the second overhang width d2, and the extension width is defined as the second extension width w2, that is, the overhang width in the isolation structure 40 surrounding the second pixel groove 52 is the second overhang width d2, and the extension width in the isolation structure 40 surrounding the second pixel groove 52 is the second extension width w2.

[0099] The overhang width in the isolation structure 40 surrounding the first pixel groove 51 is a first overhang width d1 , and the extension width in the isolation structure 40 surrounding the first pixel groove 51 is a second extension width w2 .

[0100] The difference between the first overhang width d1 and the second overhang width d2 is a first preset fixed value, and the first preset fixed value is a positive number. The difference between the first extension width w1 and the second extension width w2 is a first preset fixed value. It can be understood that the difference between the first overhang width d1 and the second overhang width d2 is the first overhang difference, and the difference between the first extension width w1 and the second extension width w2 is the first extension difference. The first overhang difference is equal to the first extension difference.

[0101] The preset fixed value is less than or equal to 3 microns and greater than or equal to 1 micron, so as to control the corrosion amount of the conductive part 41 during the subsequent evaporation of the sub-pixel 60. It can be understood that the corrosion amount of the conductive part 41 will not be infinite during the subsequent evaporation of the sub-pixel 60, and selecting the preset fixed value within this range is helpful to compensate the conductive parts 41 of different isolation structures 40 in a targeted and differentiated manner.

[0102] Specifically, the first preset fixed value is less than or equal to 3 micrometers and greater than or equal to 1 micrometer.

[0103] In a direction perpendicular to the pixel definition layer 30 , the thickness of the eave structure 42 is 0.1 micrometer to 0.3 micrometer, and the thickness of the conductive portion 41 is 0.6 micrometer to 1.5 micrometer. The eave structure 42 has insulating properties.

[0104] The eaves structure 42 has insulation properties and can be an inorganic film layer, such as silicon oxide, silicon nitrogen compound, or silicon oxide nitrogen compound. The eaves structure 42 can also be an organic compound film layer, such as soluble polytetrafluoroethylene (PFA), PI (Polyimide) and other materials.

[0105] The isolation structure 40 surrounding the first pixel groove 51 is defined as a first isolation structure 411, and the isolation structure 40 surrounding the second pixel groove 52 is defined as a second isolation structure 412. In the adjacent first pixel groove 51 and the second pixel groove 52, the outer sidewall 40B of the first isolation structure 411 is in contact with the outer sidewall 40B of the second isolation structure 412, and is flush in a direction parallel to the pixel definition layer 30.

[0106] It should be noted that, in the subsequent process of vapor-depositing the sub-pixel 60 on the driving substrate 100, the sub-pixel 60 is formed by vapor-depositing in the first pixel groove 51 and the second pixel groove 52 in sequence, and the colors of the sub-pixels 60 formed by vapor-depositing in the first pixel groove 51 and the second pixel groove 52 are different.

[0107] It can be understood that, in the subsequent process of evaporating the sub-pixels 60, the evaporation order of the sub-pixels 60 of different colors is ensured to correspond to the order of the overhang widths in the different isolation structures 40, that is, the sub-pixel 60 evaporated first is correspondingly arranged in the pixel groove 50 surrounded by the isolation structure 40 with the largest overhang width (that is, the first pixel groove 51), and the sub-pixel 60 evaporated later is arranged in the pixel groove 50 surrounded by the isolation structure 40 with the smaller overhang width, so as to match the corrosion of the conductive part 41 in the preparation process of the sub-pixel 60 arranged in the pixel groove 50, thereby compensating for the width of the corroded conductive part 41, so as to ensure that the overhang widths of each isolation structure 40 in the final product are the same, so as to achieve the effect of improving the overlap between the cathode 62 and the conductive part 41 of each sub-pixel 60.

[0108] In this embodiment, the pixel definition layer 30 is etched to expose the anode 21, so that the pixel definition layer 30 does not need to be etched again in the subsequent process of evaporating the sub-pixel 60, which can simplify the steps. Specifically, the pixel definition layer 30 has a plurality of pixel openings 31 arranged at intervals. The pixel openings 31 are arranged one-to-one with the anode 21. The pixel openings 31 at least partially expose the corresponding anode 21. That is, the anode 21 is exposed to the pixel definition layer 30 through the pixel openings 31.

[0109] In other embodiments, the pixel definition layer 30 may not be etched, and the pixel opening 31 may be obtained by etching before evaporating the sub-pixel 60 .

[0110] The driving substrate 100 may further include a protective film (not shown), which is disposed on the side of the isolation structure 40 away from the driving layer 10. The protective film is used to protect the conductive portion 41 from corrosion by the external environment during storage and transportation of the driving substrate 100. It should be understood that when the sub-pixel 60 is evaporated on the driving substrate 100, the protective film needs to be removed.

[0111] See also Figures 1 to 4 , Figure 3 is a schematic structural diagram of a second embodiment of a driving substrate provided by the present application, Figure 4 It is a schematic diagram of the arrangement structure of an embodiment of the pixel groove and isolation structure provided in the present application.

[0112] The second embodiment of the driving substrate 100 provided in the present application is substantially similar in structure to the first embodiment of the driving substrate 100 provided in the present application, except that the pixel groove 50 further includes a third pixel groove 53 .

[0113] In this embodiment, the pixel groove 50 further includes a third pixel groove 53. In the isolation structure 40 surrounding the third pixel groove 53, the overhang width is defined as a third overhang width d3, and the extension width is defined as a third extension width w3. That is, the overhang width in the isolation structure 40 surrounding the third pixel groove 53 is the third overhang width d3, and the extension width in the isolation structure 40 surrounding the third pixel groove 53 is the third extension width w3.

[0114] The difference between the second overhang width d2 and the third overhang width d3 is a second preset fixed value. The difference between the second extension width w2 and the third extension width w3 is a second preset fixed value. That is, the difference between the second overhang width d2 and the third overhang width d3 is a second overhang difference, and the difference between the second extension width w2 and the third extension width w3 is a second extension difference. The second overhang difference is equal to the second extension difference.

[0115] The second preset fixed value may be equal to or different from the first preset fixed value, depending on the concentration of the etching solution for etching the cathode 62 of the sub-pixel 60 and / or the etching reaction time selected during the subsequent evaporation of the sub-pixel 60 of different colors.

[0116] That is, when the same etching solution is selected for etching the cathodes 62 of the sub-pixels 60 of different colors, and the etching concentrations and etching reaction times are the same, the second preset fixed value is equal to the first preset fixed value.

[0117] When the same etching solution is selected for etching the cathode 62 of the sub-pixels 60 of different colors, the concentration of the etching solution is different and / or the etching reaction time is different, and the second preset fixed value is not equal to the first preset fixed value. The second preset fixed value may be greater than the first preset fixed value, or the second preset fixed value may be less than the first preset fixed value.

[0118] Specifically, the second preset fixed value is less than or equal to 3 micrometers, and greater than 1 or equal to 1 micrometer.

[0119] In this embodiment, the second preset fixed value is equal to the first preset fixed value, which can reduce the difficulty of the subsequent preparation process of the vapor-deposited sub-pixel 60 .

[0120] This embodiment can also achieve the effect of improving the overlap between the cathode 62 of the sub-pixel 60 and the conductive portion 41. Compared with the first embodiment of the driving substrate 100 provided in this application, the driving substrate 100 of this embodiment can evaporate more colors of the sub-pixels 60 during the subsequent evaporation of the sub-pixels 60.

[0121] The arrangement of the pixel slots 50 is not limited here and can be selected according to actual needs. Figure 4 As shown, the first pixel groove 51 and the second pixel groove 52 are located on the same side of the third pixel groove 53. The first pixel groove 51, the second pixel groove 52 and the third pixel groove 53 and the isolation structure 40 surrounding the pixel groove 50 form a minimum repeating unit. The repeating unit is rectangular.

[0122] See also Figure 2 , Figure 5 and Figure 6 , Figure 5 is a schematic flow chart of a first embodiment of a method for preparing a drive substrate provided in the present application, Figure 6 yes Figure 5 Schematic diagram of the structure corresponding to step S100.

[0123] The present application provides a method for preparing a driving substrate, which is used to prepare the driving substrate 100 described above.

[0124] In one embodiment, a method for preparing a driving substrate includes:

[0125] S100: providing a driving layer, an anode metal layer, and a pixel definition layer which are stacked in sequence.

[0126] Specifically, a driving layer 10 , an anode metal layer 20 , and a pixel definition layer 30 which are stacked in sequence are provided.

[0127] The driving substrate 100 further includes a planar layer 11 , which is located between the driving layer 10 and the anode metal layer 20 .

[0128] S200: An isolation structure is formed on a side of the pixel definition layer away from the driving layer; wherein the isolation structure is arranged to form a pixel groove; the isolation structure includes a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends the conductive part in the direction close to the pixel groove; in the wall thickness direction of the isolation structure, the width of the conductive part is equal; it is defined that the width of the eaves structure beyond the top of the conductive part in the wall thickness direction of the isolation structure is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width; the pixel groove includes a first pixel groove and a second pixel groove; in the isolation structure surrounding the first pixel groove, the overhang width is defined as the first overhang width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel groove, the overhang width is defined as the second overhang width, and the extension width is defined as the second extension width; the difference between the first overhang width and the second overhang width is a first preset fixed value, and the first preset fixed value is a positive number; the difference between the first extension width and the second extension width is the first preset fixed value.

[0129] The isolation structure 40 and the pixel groove 50 are not described in detail here, and reference is made to the above description.

[0130] See also Figure 2 , Figure 7 and Figure 8 , Figure 7 yes Figure 5 A schematic diagram of a flow chart of an implementation method of step S200, Figure 8 yes Figure 7 Schematic diagram of the structure corresponding to step S10.

[0131] In one embodiment, the step of forming an isolation structure on a side of the pixel definition layer away from the driving layer in step S200 includes:

[0132] S10: forming a conductive layer and an eaves layer in sequence on a side of the pixel definition layer away from the driving layer.

[0133] Specifically, a conductive layer 410 and an eaves layer 420 are sequentially formed on a side of the pixel definition layer 30 away from the driving layer 10 .

[0134] S20: etching the eaves layer and the conductive layer to form a pixel groove; the sidewall of the pixel groove forms an isolation structure.

[0135] Specifically, the eaves layer 420 and the conductive layer 410 are etched to form the pixel groove 50. The sidewall of the pixel groove 50 forms the isolation structure 40. The conductive layer 410 is etched to obtain the conductive part 41, and the eaves layer 420 is etched to obtain the eaves structure 42.

[0136] See also Figure 2 and Fig. 9 , Fig. 9 yes Figure 7 Schematic diagram of the process of step S20 in an implementation manner.

[0137] In a specific implementation, step S20: etching the eaves layer and the conductive layer to form a pixel groove includes:

[0138] S211: Determine an area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the area to be etched to form a prefabricated pixel groove; define the prefabricated pixel groove used to form the first pixel groove as the first prefabricated pixel groove, and define the prefabricated pixel groove used to form the second pixel groove as the second prefabricated pixel groove.

[0139] Specifically, a plurality of to-be-etched regions 71 are determined on the eaves layer 420 by exposure and development, and the eaves layer 420 and the conductive layer 410 at the to-be-etched regions 71 are etched to form prefabricated pixel grooves 54. The prefabricated pixel grooves 54 are respectively defined as a first prefabricated pixel groove 541 and a second prefabricated pixel groove 542.

[0140] It should be noted that the widths of the conductive layer 410 surrounding the prefabricated pixel groove 54 are all the same, and the widths of the eaves layer 420 surrounding the prefabricated pixel groove 54 are all the same.

[0141] See also Figure 2 , Fig.10 and Fig.11 , Fig.10 yes Fig. 9 A flow chart of an implementation method of step S211 in FIG. Fig.11 yes Fig.10 Schematic diagram of the structure corresponding to steps S2111 to S2114.

[0142] In a specific implementation, S211 specifically includes:

[0143] S2111: Dispose a first photoresist layer on a side of the eaves layer away from the conductive layer.

[0144] S2112: exposing and developing the first photoresist layer, determining an area to be etched on the eaves layer and removing the first photoresist layer in the area to be etched.

[0145] S2113: Etching to remove the eaves layer in the area to be etched.

[0146] Specifically, the eaves layer 420 in the to-be-etched area 71 is removed by dry etching.

[0147] In other embodiments, other methods may be used to remove the eaves layer 420 in the area 71 to be etched.

[0148] S2114: Etching and removing the conductive layer in the area to be etched to obtain a prefabricated pixel groove.

[0149] Specifically, the conductive layer 410 at the to-be-etched area 71 is removed by wet etching to obtain the prefabricated pixel groove 54 .

[0150] S212: Determine a mask area on the unetched eaves layer, and remove the eaves layer outside the mask area to form a pixel groove; wherein, in the wall thickness direction of the conductive layer, the spacing between the inner edge of the eaves layer surrounding the first prefabricated pixel groove and the side edges of the adjacent mask area close to each other is a first spacing, and the spacing between the inner edge of the eaves layer surrounding the second prefabricated pixel groove and the side edges of the adjacent mask area close to each other is a second spacing, and the difference between the second spacing and the first spacing is a first preset fixed value.

[0151] Specifically, a mask area 72 is determined on the unetched eaves layer 420 by exposure and development, and the eaves layer 420 outside the mask area 72 is removed to retain the eaves layer 420 at the mask area 72, so that the prefabricated pixel groove 54 forms a pixel groove 50.

[0152] It should be noted that in the embodiment of the present application, in the process of forming different pixel grooves 50, the conductive layer 410 only needs to be etched once. It can be understood that in the process of ensuring that the width of the conductive portion 41 remains unchanged and adjusting the width of the eaves structure 42 to form pixel grooves 50 with different overhang widths, there is no need to etch the conductive layer 410 multiple times, which can reduce the number of wet etchings, thereby saving process flow and production time, and having higher production capacity without requiring more equipment.

[0153] It should be understood that, compared with wet etching, dry etching has a more precise control of precision. That is, compared with the method of ensuring that the width of the eaves structure 42 remains unchanged and adjusting the width of the conductive portion 41 to form pixel slots 50 with different overhang widths, in the embodiment of the present application, the width of the conductive portion 41 remains unchanged, and the width of the eaves structure 42 is adjusted to reduce the number of wet etching steps, and the width can be more precisely controlled, so that the size adjustment of the overhang width is more precise.

[0154] See also Figure 2 , Fig.12and Fig.13 , Fig.12 yes Fig. 9 A flow chart of an implementation method of step S212 in FIG. Fig.13 yes Fig.12 Schematic diagram of the structure corresponding to steps S2121 to S2123.

[0155] In a specific embodiment, in step S212, a mask area is determined on the unetched eaves layer, and the eaves layer outside the mask area is removed to form the prefabricated pixel groove into a pixel groove, which includes:

[0156] S2121: remove the first photoresist layer, and set a second photoresist layer on the side of the eaves layer away from the conductive layer.

[0157] S2122: exposing and developing the second photoresist layer, determining a mask area on the eaves layer and removing the second photoresist layer outside the mask area.

[0158] S2123: Etching to remove the eaves layer outside the mask area.

[0159] Specifically, the eaves layer 420 outside the mask area 72 is removed by dry etching.

[0160] In other embodiments, other methods may be used to remove the eaves layer 420 outside the mask area 72 .

[0161] See also Figure 3 , Figures 14 to 16 , Fig.14 yes Figure 7 A schematic diagram of another embodiment of step S20, Fig.15 yes Fig.14 The structural diagram corresponding to step S221 in FIG. Fig.16 yes Fig.14 Schematic diagram of the structure corresponding to step S222 in .

[0162] In another specific embodiment, step S20: etching the eaves layer and the conductive layer to form a pixel groove includes:

[0163] S221: Determine an area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the area to be etched to form a prefabricated pixel groove; define the prefabricated pixel groove used to form the first pixel groove as the first prefabricated pixel groove, the prefabricated pixel groove used to form the second pixel groove as the second prefabricated pixel groove, and the prefabricated pixel groove used to form the third pixel groove as the third prefabricated pixel groove.

[0164] For the specific steps, please refer to step S211, which will not be repeated here.

[0165] S222: Determine a mask area on the unetched eaves layer, and remove the eaves layer outside the mask area to form a pixel groove; wherein, in the wall thickness direction of the conductive layer, the spacing between the inner edge of the eaves layer surrounding the first prefabricated pixel groove and the side edges of the adjacent mask areas are close to each other is a first spacing, the spacing between the inner edge of the eaves layer surrounding the second prefabricated pixel groove and the side edges of the adjacent mask areas are close to each other is a second spacing, and the spacing between the inner edge of the eaves layer surrounding the third prefabricated pixel groove and the side edges of the adjacent mask areas are close to each other is a third spacing; the difference between the second spacing and the first spacing is a first preset fixed value, and the difference between the third spacing and the second spacing is a second preset fixed value.

[0166] In this embodiment, the first preset fixed value is equal to the second preset fixed value. In other embodiments, the first preset fixed value may be unequal to the second preset fixed value, which will not be described in detail here, and reference is made to the above description.

[0167] Step S222 is similar to step S212. For specific steps, please refer to step S212 and will not be repeated here.

[0168] See also Figure 3 and Fig.17 , Fig.17 yes Figure 5 Schematic diagram of the structure corresponding to step 300.

[0169] After step S200, the following steps are also included:

[0170] Step S300: forming a pixel opening on the pixel definition layer, wherein the pixel groove is arranged corresponding to the pixel opening and covers the corresponding pixel opening.

[0171] Specifically, the photoresist layer on the eaves layer 420 is removed, and a third photoresist layer 83 is disposed on a side of the eaves layer 420 away from the pixel definition layer 30. The third photoresist layer 83 is exposed and developed to define a first exposed area 73 on the pixel definition layer 30. The pixel definition layer 30 at the first exposed area 73 is removed to form a pixel opening 31.

[0172] The first exposed area 73 is disposed corresponding to the pixel groove 50 and is located in the pixel groove 50 .

[0173] The structure of the pixel opening 31 is not described in detail here, and reference is made to the above description.

[0174] It should be understood that in other implementations, step S300 may not be included.

[0175] See also Figure 2 , Fig.18 and Fig.19 , Fig.18is a schematic flow chart of an embodiment of a method for preparing a display panel provided in the present application, Fig.19 yes Fig.18 Schematic diagram of the structure corresponding to step S1 in FIG.

[0176] The present application provides a method for manufacturing a display panel. The display panel 200 includes a sub-pixel 60 and an etching protection layer 90 disposed on one side of the sub-pixel 60. The display panel 200 also includes a driving layer 10, an anode metal layer 20, a pixel definition layer 30, and an isolation structure 40. The sub-pixel 60 includes an anode 21, a light-emitting layer 61, and a cathode 62 that are stacked in sequence.

[0177] The method for preparing a display panel includes:

[0178] S1: Provide a driving substrate.

[0179] Specifically, a driving substrate 100 is provided. The driving substrate 100 is the driving substrate 100 mentioned above, and the structure of the driving substrate 100 is not described here, and reference is made to the above description.

[0180] S2: forming a sub-pixel by vapor deposition in the pixel groove, and making the cathode of the sub-pixel overlap with the conductive part; the sub-pixel includes a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in the first pixel groove, and the second sub-pixel is formed in the second pixel groove.

[0181] See also Figure 2 , Figure 20 to Figure 22 , Fig. 20 yes Fig.18 A schematic flow chart of an implementation method of step S2 in FIG. Fig.21 yes Fig. 20 A schematic flow chart of an implementation method of step S201 in FIG. Fig. 22 yes Fig.21 Schematic diagram of the structure corresponding to steps S2011 and S2012.

[0182] In a specific embodiment, the step of forming a sub-pixel by evaporation in the pixel groove and making the cathode of the sub-pixel overlap with the conductive part in step S2 includes:

[0183] S201: evaporating a first sub-pixel in a first pixel groove.

[0184] Specifically, the light emitting layer 61 and the cathode 62 of the first sub-pixel 60A are formed in the first pixel groove 51 by evaporation.

[0185] In one implementation, step S201 specifically includes:

[0186] S2011: forming a light emitting material layer and a cathode material layer of a first sub-pixel and a first etching protection layer in sequence on the entire surface of the driving substrate.

[0187] Specifically, the luminescent material layer 610 and cathode material layer 620 of the first sub-pixel 60A and the first etching protection layer 91 are sequentially deposited on the entire surface of the driving substrate 100. The first etching protection layer 91 is used to protect the first sub-pixel 60A from etching when the sub-pixels 60 of other colors are deposited.

[0188] S2012: Disposing a fourth photoresist layer on a side of the cathode material layer away from the driving substrate, and determining a second exposure area; sequentially etching the fourth photoresist layer, the first etching protection layer, the light-emitting material layer and the cathode material layer at the second exposure area to form a first sub-pixel in an area outside the second exposure area.

[0189] Specifically, the fourth photoresist layer 84 , the first etching protection layer 91 , the light emitting material layer 610 and the cathode material layer 620 at the second exposed area 74 are sequentially etched to form the first sub-pixel 60A in the area outside the second exposed area 74 .

[0190] It should be noted that the cathode material layer 620 is etched by wet etching. The first etching protection layer 91 outside the second exposed area 74 is not removed, that is, the first etching protection layer 91 is also provided on the side of the first sub-pixel 60A away from the driving substrate 100. The first etching protection layer 91 covers the first sub-pixel 60A and the inner wall surface of the isolation structure 40 surrounding the first pixel groove 51, so that the cathode 62 of the first sub-pixel 60A and the conductive part 41 in the isolation structure 40 will not be etched again during the subsequent evaporation of the sub-pixels 60 of other colors.

[0191] The first sub-pixel 60A is located in the first pixel groove 51 .

[0192] It should be understood that when etching the cathode material layer 620 at the second exposed area 74, the etching solution for etching the cathode material layer 620 will corrode the side walls of the second pixel groove 52, causing the width of the conductive portion 41 in the isolation structure 40 surrounding the second pixel groove 52 to become narrower, so that the overhang width in the second isolation structure 412 is equal to the overhang width in the first isolation structure 411, and the extension width in the second isolation structure 412 is equal to the extension width in the first isolation structure 411, thereby improving the overlap consistency between the cathode 62 and the conductive portion 41 of each sub-pixel 60.

[0193] The first preset fixed value is the etching width of the conductive portion 41 by the etching solution etching the cathode material layer 620 when etching the cathode material layer 620 at the second exposed area 74 .

[0194] S202: evaporating a second sub-pixel in the second pixel groove.

[0195] Specifically, the light emitting layer 61 and the cathode 62 of the second sub-pixel 60B are formed in the second pixel groove 52 by evaporation.

[0196] See also Figure 2 , Fig.23 and 24 , Fig.23 yes Fig. 20 A schematic diagram of a flow chart of an implementation method of step S202 in FIG. Fig.24 yes Fig.23 Schematic diagram of the structure corresponding to steps S2021 and S2022.

[0197] In one implementation, step S202 specifically includes:

[0198] S2021: removing the fourth photoresist layer, and sequentially forming a light-emitting material layer and a cathode material layer of a second sub-pixel, and a second etching protection layer on the entire surface of the driving substrate.

[0199] S2022: Setting a fifth photoresist layer on the side of the cathode material layer forming the second sub-pixel away from the driving substrate, and determining a third exposure area; sequentially etching the fifth photoresist layer at the third exposure area, the second etching protection layer, the light-emitting material layer and the cathode material layer forming the second sub-pixel to form a second sub-pixel in an area outside the third exposure area.

[0200] Steps S2021 to S2022 are similar to steps S2011 to S2012, and are described above and will not be repeated here.

[0201] It should be noted that the second etching protection layer 92 outside the third exposed area 75 is not removed, that is, the second etching protection layer 92 is still disposed on the side of the second sub-pixel 60B away from the driving substrate 100 .

[0202] The second sub-pixel 60B is located in the second pixel groove 52 .

[0203] It should be understood that since the first etching protection layer 91 is provided on the side of the first sub-pixel 60A away from the driving substrate 100, when etching the cathode material layer 620 at the third exposed area 75, the etching solution for etching the cathode material layer 620 will not corrode the side walls of the first pixel groove 51 and the cathode 62 of the first sub-pixel 60A.

[0204] See also Figure 3 , Fig.25 and Fig.26 , Fig.25 yes Fig.18 A schematic flow chart of another implementation of step S2 in FIG. Fig.26 yes Fig.25 Schematic diagram of the structure corresponding to steps S201 and S202.

[0205] In another specific embodiment, the step of forming a sub-pixel by evaporation in the pixel groove and making the cathode of the sub-pixel overlap with the conductive part in step S2 includes:

[0206] S201: evaporating a first sub-pixel in a first pixel groove.

[0207] The specific steps refer to the above description and will not be repeated here.

[0208] It should be understood that when etching the cathode material layer 620 at the second exposed area 74, the etching solution for etching the cathode material layer 620 will corrode the side walls of the second pixel groove 52 and the side walls of the third pixel groove 53, causing the width of the conductive portion 41 in the isolation structure 40 surrounding the second pixel groove 52 to be narrowed by a first preset fixed value, and the width of the conductive portion 41 in the isolation structure 40 surrounding the third pixel groove 53 to be narrowed by a preset fixed value, so that the overhang width in the second isolation structure 412 is equal to the overhang width in the first isolation structure 411, and the extension width in the second isolation structure 412 is equal to the extension width in the first isolation structure 411, thereby improving the overlap consistency between the cathode 62 and the conductive portion 41 of each sub-pixel 60.

[0209] The first preset fixed value is the etching width of the conductive portion 41 by the etching solution etching the cathode material layer 620 when etching the cathode material layer 620 at the second exposed area 74 .

[0210] S202: evaporating a second sub-pixel in the second pixel groove.

[0211] The specific steps refer to the above description and will not be repeated here.

[0212] It should be understood that when etching the cathode material layer 620 at the third exposed area 75, the etching solution for etching the cathode material layer 620 will corrode the side walls of the third pixel groove 53, causing the width of the conductive portion 41 in the isolation structure 40 surrounding the third pixel groove 53 to be narrowed again by the first preset fixed value, so that the overhang width in the third isolation structure 41340 is equal to the overhang width in the first isolation structure 411, and the extension width in the third isolation structure 41340 is equal to the extension width in the first isolation structure 411, thereby improving the overlap consistency between the cathode 62 and the conductive portion 41 of each sub-pixel 60.

[0213] The second preset fixed value is the etching width of the conductive portion 41 by the etching solution for etching the cathode material layer 620 when etching the cathode material layer 620 at the third exposed area 75 .

[0214] That is to say, due to the evaporation process of the sub-pixel 60, the side wall of the pixel groove 50 where the sub-pixel 60 is formed later will be etched at least once by the etching solution for etching the cathode 62 material. By compensating and adjusting the width of the eaves structure 42 of the side wall (i.e., the isolation structure 40) of the pixel groove 50 where the sub-pixel 60 is formed later, so as to match the corrosion of the conductive part 41 in the preparation process of the sub-pixel 60 disposed in the pixel groove 50, it is ensured that the overhang width of each isolation structure 40 in the final product is the same, thereby improving the overlap consistency between the cathode 62 and the conductive part 41 of each sub-pixel 60, and achieving the purpose of improving the overlap effect.

[0215] S203: evaporating a third sub-pixel in the third pixel groove.

[0216] Specifically, the light emitting layer 61 and the cathode 62 of the third sub-pixel 60C are formed in the third pixel groove 53 by evaporation.

[0217] See also Figure 3 , Fig. 27 and Fig.28 , Fig. 27 yes Fig.25 A schematic flow chart of an implementation method of step S203 in FIG. Fig.28 yes Fig. 27 Schematic diagram of the structure corresponding to steps S2031 and S2032.

[0218] In one embodiment, step S203: evaporating a third sub-pixel in the third pixel groove comprises:

[0219] S2031: removing the fifth photoresist layer, and sequentially forming a light emitting material layer and a cathode material layer of a third sub-pixel, and a third etching protection layer on the entire surface of the driving substrate.

[0220] Specifically, the fifth photoresist layer 85 is removed, and the light emitting material layer 610 and the cathode material layer 620 of the third sub-pixel 60C and the third etching protection layer 93 are sequentially formed on the entire surface of the driving substrate 100. The third etching protection layer 93 is used to protect the third sub-pixel 60C from etching when the sub-pixels 60 of other colors are evaporated.

[0221] S2032: Setting a sixth photoresist layer on the side of the cathode material layer forming the third sub-pixel away from the driving substrate, and determining a fourth exposure area; sequentially etching the sixth photoresist layer at the fourth exposure area, the third etching protection layer, the light-emitting material layer and the cathode material layer forming the third sub-pixel to form the third sub-pixel in the area outside the fourth exposure area.

[0222] Steps S2031 to S2032 are similar to steps S2021 to S2022 and will not be repeated here. Please refer to the above description.

[0223] The third sub-pixel 60C is located in the third pixel groove 53. The sixth photoresist layer 86 needs to be removed to form the third sub-pixel 60C.

[0224] It should be noted that the first etching protection layer 91, the second etching protection layer 92 and the third etching protection layer 93 in the embodiment of the present application are all etching protection layers 90, but the preparation order and the setting position are different, but the functions are the same.

[0225] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0226] The above are only implementation methods of the present application, and are not intended to limit the patent protection scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for preparing a driving substrate, characterized in that: include: Providing a driving layer, an anode metal layer, and a pixel definition layer stacked in sequence; forming an isolation structure on a side of the pixel definition layer away from the driving layer; Wherein, the isolation structure is arranged to form a pixel groove; the isolation structure includes a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends the conductive part in the direction close to the pixel groove; in the wall thickness direction of the isolation structure, the width of the conductive part is equal; it is defined that the width of the eaves structure beyond the top of the conductive part in the wall thickness direction of the isolation structure is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width; the pixel groove includes a first pixel groove and a second pixel groove; in the isolation structure surrounding the first pixel groove, the overhang width is defined as the first overhang width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel groove, the overhang width is defined as the second overhang width, and the extension width is defined as the second extension width; the difference between the first overhang width and the second overhang width is a first preset fixed value, and the first preset fixed value is a positive number; A difference between the first extension width and the second extension width is the first preset fixed value.

2. The method for preparing a driving substrate according to claim 1, characterized in that: The isolation structure is formed on a side of the pixel definition layer away from the driving layer, comprising: forming a conductive layer and an eaves layer in sequence on a side of the pixel definition layer away from the driving layer; The eaves layer and the conductive layer are etched to form a pixel groove; the sidewall of the pixel groove forms the isolation structure.

3. The method for preparing a driving substrate according to claim 2, characterized in that: The etching of the eaves layer and the conductive layer to form a pixel groove comprises: Determine an area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the area to be etched to form a prefabricated pixel groove; define the prefabricated pixel groove used to form the first pixel groove as a first prefabricated pixel groove, and define the prefabricated pixel groove used to form the second pixel groove as a second prefabricated pixel groove; Determine a mask area on the eaves layer that has not been etched, and remove the eaves layer outside the mask area so that the prefabricated pixel groove forms the pixel groove; Wherein, in the wall thickness direction of the conductive layer, the spacing between the inner edge of the eaves layer surrounding the first prefabricated pixel groove and the side of the adjacent mask area close to each other is a first spacing, and the spacing between the inner edge of the eaves layer surrounding the second prefabricated pixel groove and the side of the adjacent mask area close to each other is a second spacing, The difference between the second spacing and the first spacing is the first preset fixed value.

4. The method for preparing a driving substrate according to claim 3, characterized in that: The etching of the eaves layer and the conductive layer to form a pixel groove comprises: Determine an area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the area to be etched to form a prefabricated pixel groove; define the prefabricated pixel groove used to form the first pixel groove as a first prefabricated pixel groove, the prefabricated pixel groove used to form the second pixel groove as a second prefabricated pixel groove, and the prefabricated pixel groove used to form the third pixel groove as a third prefabricated pixel groove; Determine a mask area on the eaves layer that has not been etched, and remove the eaves layer outside the mask area so that the prefabricated pixel groove forms the pixel groove; Wherein, in the wall thickness direction of the conductive layer, the spacing between the inner edge of the eaves layer surrounding the first prefabricated pixel groove and the side of the adjacent mask area close to each other is a first spacing, the spacing between the inner edge of the eaves layer surrounding the second prefabricated pixel groove and the side of the adjacent mask area close to each other is a second spacing, and the spacing between the inner edge of the eaves layer surrounding the third prefabricated pixel groove and the side of the adjacent mask area close to each other is a third spacing; The difference between the second spacing and the first spacing is the first preset fixed value, and the difference between the third spacing and the second spacing is the second preset fixed value.

5. A driving substrate prepared by the method for preparing a driving substrate according to any one of claims 1 to 4; characterized in that: The invention comprises a driving layer, an anode metal layer, a pixel definition layer and an isolation structure which are stacked in sequence; the isolation structure surrounds a pixel groove; the isolation structure comprises a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends the conductive part in a direction close to the pixel groove; and the width of the conductive part is equal in the wall thickness direction of the isolation structure; Wherein, defined in the wall thickness direction of the isolation structure, the width of the eaves structure beyond the top of the conductive portion is the overhang width, and the width of the eaves structure beyond the bottom of the conductive portion is the extension width; The pixel slots include a first pixel slot and a second pixel slot; In the isolation structure surrounding the first pixel groove, the overhang width is defined as a first overhang width, and the extension width is defined as a first extension width; In the isolation structure surrounding the second pixel groove, the overhang width is defined as a second overhang width, and the extension width is defined as a second extension width; The difference between the first overhang width and the second overhang width is a first preset fixed value, and the first preset fixed value is a positive number; A difference between the first extension width and the second extension width is the first preset fixed value.

6. The driving substrate according to claim 5, characterized in that: The pixel slot also includes a third pixel slot. In the isolation structure surrounding the third pixel slot, the overhang width is defined as a third overhang width, and the extension width is defined as a third extension width; the difference between the second overhang width and the third overhang width is a second preset fixed value; the difference between the second extension width and the third extension width is the second preset fixed value; the second preset fixed value is a positive number.

7. The driving substrate according to claim 6, characterized in that: The first preset fixed value is equal to the second preset fixed value.

8. The driving substrate according to claim 6, characterized in that: The preset fixed value is less than or equal to 3 microns and greater than or equal to 1 micron; In a direction perpendicular to the pixel definition layer, the thickness of the eaves structure is 0.1 micrometer to 0.3 micrometer, and the thickness of the conductive part is 0.6 micrometer to 1.5 micrometer; the eaves structure has insulation properties.

9. The driving substrate according to claim 5, characterized in that: The anode metal layer includes a plurality of anodes arranged at intervals; the pixel grooves are arranged corresponding to the anodes and cover the areas corresponding to the anodes.

10. A method for preparing a display panel, characterized in that: include: Providing a driving substrate; The driving substrate is the driving substrate according to claim 5; Sub-pixels are formed by vapor deposition in a pixel groove, and a cathode of the sub-pixel is overlapped with a conductive portion; the sub-pixel includes a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in a first pixel groove, and the second sub-pixel is formed in a second pixel groove.

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