Driving substrate and preparation method thereof, and preparation method of display panel

Abstract

The invention provides a driving substrate and a preparation method thereof, and a preparation method of a display panel. According to the invention, the overhanging width and the extension width of the isolation structure surrounding different pixel grooves are differentiated to match the corrosion condition of the conductive part in the preparation process of the sub-pixels arranged in the pixel grooves, so that the width of the corroded conductive part is compensated; therefore, the widths of the conductive parts of the isolation structures in the finished product are the same; furthermore, the difference value between the first overhang width and the second overhang width and the difference value between the first extension width and the second extension width are enabled to be the same, so that the difference value between the overhang width and the extension width in a single isolation structure is ensured to be unchanged, the evaporation angles of the sub-pixels can be further ensured to be consistent during subsequent evaporation of the sub-pixels, and the evaporation efficiency of the sub-pixels is improved. Therefore, the lap joint effect consistency of the cathode of each sub-pixel and the conductive part is facilitated, and the conductive lap joint effect is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a driving substrate and a preparation method thereof, and a preparation method of a display panel. Background Art

[0002] With the development of display technology, in order to reduce costs, the cathode and light-emitting layer in the OLED (Organic Light-Emitting Diode) display device are formed by removing the fine mask plate. The cathode is formed by evaporation during the formation process. The cathode is overlapped with the isolation structure to achieve electrical connection between the cathodes.

[0003] However, this evaporation method may cause a risk of poor overlap between the cathode and the isolation structure. Summary of the invention

[0004] The main technical problem solved by the present application is to provide a driving substrate and a preparation method thereof, and a preparation method of a display panel, so as to solve the problem of poor overlap between the cathode and the isolation structure in the prior art.

[0005] In order to solve the above technical problems, the first technical solution provided by the present application is: to provide a method for preparing a driving substrate, comprising:

[0006] Providing a driving layer, an anode metal layer, and a pixel definition layer stacked in sequence;

[0007] forming an isolation structure on a side of the pixel definition layer away from the driving layer;

[0008] In which, the isolation structure is arranged to form a pixel groove; the isolation structure includes a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends the conductive part in the direction close to the pixel groove; in which, defined in the wall thickness direction of the isolation structure, the width of the eaves structure beyond the top of the conductive part is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width; the pixel groove includes a first pixel groove and a second pixel groove which are formed in sequence; in the isolation structure surrounding the first pixel groove, the overhang width is defined as the first overhang width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel groove, the overhang width is defined as the second overhang width, and the extension width is defined as the second extension width; the difference between the first overhang width and the second overhang width is a preset fixed value, and the fixed preset value is a positive number; the difference between the first extension width and the second extension width is a preset fixed value.

[0009] Wherein, an isolation structure is formed on a side of the pixel definition layer away from the driving layer, including:

[0010] forming a conductive layer and an eaves layer in sequence on a side of the pixel definition layer away from the driving layer;

[0011] The eaves layer and the conductive layer are etched to form a pixel groove; the sidewall of the pixel groove forms an isolation structure.

[0012] The step of etching the eaves layer and the conductive layer to form a pixel groove comprises:

[0013] Determine a first area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the first area to be etched to form a first pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the first area to be etched is a first etching concentration, and the etching reaction time is a first reaction time;

[0014] A second area to be etched is determined on the eaves layer, and the eaves layer and the conductive layer at the second area to be etched are etched to form a second pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the second area to be etched is a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time.

[0015] The step of etching the eaves layer and the conductive layer to form a pixel groove comprises:

[0016] Determine a first area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the first area to be etched to form a first pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the first area to be etched is a first etching concentration, and the etching reaction time is a first reaction time;

[0017] Determine a second area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the second area to be etched to form a second pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the second area to be etched is a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time;

[0018] A third area to be etched is determined on the eaves layer, and the eaves layer and the conductive layer at the third area to be etched are etched to form a third pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the third area to be etched is a third etching concentration, and the etching reaction time is a third reaction time; the third etching concentration is less than the second etching concentration, and / or the third reaction time is less than the second reaction time.

[0019] In order to solve the above technical problems, the second technical solution provided by the present application is: providing a driving substrate, the driving substrate is prepared by the above-mentioned driving substrate preparation method; wherein the driving substrate comprises a driving layer, an anode metal layer, a pixel definition layer and an isolation structure which are stacked in sequence; the isolation structure is arranged to surround a pixel groove; the isolation structure comprises a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends a conductive part in a direction close to the pixel groove; and the width of the eaves structure is equal in the wall thickness direction of the isolation structure;

[0020] Wherein, it is defined that in the wall thickness direction of the isolation structure, the width of the eaves structure beyond the top of the conductive part is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width;

[0021] The pixel grooves include a first pixel groove and a second pixel groove which are sequentially formed;

[0022] In the isolation structure surrounding the first pixel groove, the overhang width is defined as a first overhang width, and the extension width is defined as a first extension width;

[0023] In the isolation structure surrounding the second pixel groove, the overhang width is defined as a second overhang width, and the extension width is defined as a second extension width;

[0024] The difference between the first overhang width and the second overhang width is a preset fixed value, and the fixed preset value is a positive number;

[0025] The difference between the first extension width and the second extension width is a preset fixed value.

[0026] Among them, the pixel groove also includes a third pixel groove, and the second pixel groove and the third pixel groove are formed in sequence; in the isolation structure surrounding the third pixel groove, the overhang width is defined as the third overhang width, and the extension width is defined as the third extension width; the difference between the second overhang width and the third overhang width is a preset fixed value; the difference between the second extension width and the third extension width is a preset fixed value.

[0027] The preset fixed value is less than or equal to 3 micrometers.

[0028] Wherein, in the direction perpendicular to the pixel definition layer, the thickness of the eaves structure is 0.1 micrometer to 0.3 micrometer, and the thickness of the conductive part is 0.6 micrometer to 1.5 micrometer;

[0029] The eaves structure is conductive, and a material of the eaves structure is different from a material of the conductive part; or, the eaves structure is insulating.

[0030] The anode metal layer includes a plurality of anodes arranged at intervals; the pixel grooves are arranged corresponding to the anodes and cover the areas where the corresponding anodes are located.

[0031] In order to solve the above technical problems, the third technical solution provided by the present application is: to provide a method for preparing a display panel, which includes:

[0032] A driving substrate is provided; the driving substrate is the driving substrate mentioned above;

[0033] Sub-pixels are formed by evaporation in the pixel groove, and the cathode of the sub-pixel is overlapped with the conductive part; the sub-pixel includes a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in the first pixel groove, and the second sub-pixel is formed in the second pixel groove.

[0034] Beneficial effects of the present application: Different from the prior art, the present application provides a driving substrate and a preparation method thereof, and a preparation method of a display panel, the preparation method of the driving substrate comprising: providing a driving layer, an anode metal layer, and a pixel definition layer which are stacked in sequence; forming an isolation structure on a side of the pixel definition layer away from the driving layer; wherein the isolation structure is arranged to form a pixel groove; the isolation structure comprises a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends the conductive part in a direction close to the pixel groove; wherein, defined in the wall thickness direction of the isolation structure, the width of the eaves structure beyond the top of the conductive part is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width; the pixel groove comprises a first pixel groove and a second pixel groove which are formed in sequence; in the isolation structure surrounding the first pixel groove, the overhang width is defined as the first overhang width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel groove, the overhang width is defined as the second overhang width, and the extension width is defined as the second extension width; the difference between the first overhang width and the second overhang width is a preset fixed value, and the fixed preset value is a positive number; the difference between the first extension width and the second extension width is a preset fixed value. By differentiating the overhang widths and extension widths of the isolation structures surrounding different pixel grooves to match the corrosion of the conductive portion in the preparation process of the sub-pixels arranged in the pixel grooves, the width of the corroded conductive portion is compensated to ensure that the widths of the conductive portions of each isolation structure are the same in the final product; further, by making the difference between the first overhang width and the second overhang width the same as the difference between the first extension width and the second extension width to ensure that the difference between the overhang width and the extension width in a single isolation structure remains unchanged, the vapor deposition angles of each sub-pixel can be further ensured to be consistent during the subsequent vapor deposition of the sub-pixels, which is beneficial to the consistency of the overlapping effect between the cathode and the conductive portion of each sub-pixel to enhance the conductive overlapping effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0036] Figure 1 is a structural schematic diagram of an embodiment of a driving substrate provided by the present application;

[0037] Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure at AA in the middle;

[0038] Figure 3 is a structural schematic diagram of a second embodiment of a driving substrate provided by the present application;

[0039] Figure 4 It is a schematic diagram of the arrangement structure of a pixel groove and an isolation structure according to an embodiment of the present application;

[0040] Figure 5 It is a schematic flow chart of a first embodiment of a method for preparing a drive substrate provided in the present application;

[0041] Figure 6 yes Figure 5 The structural diagram corresponding to step S100;

[0042] Figure 7 yes Figure 5 A schematic flow chart of an implementation method of step S200;

[0043] Figure 8 yes Figure 7 The structural schematic diagram corresponding to step S10;

[0044] Fig. 9 yes Figure 7 A schematic diagram of a flow chart of an implementation method of step S20;

[0045] Fig.10 yes Fig. 9 A schematic flow chart of an implementation method of step S211;

[0046] Fig.11 yes Fig.10 The structural diagram corresponding to steps S2111 to S2114;

[0047] Fig.12 yes Fig. 9 A schematic flow chart of an implementation method of step S212;

[0048] Fig.13 yes Fig.12Schematic diagram of the structure corresponding to steps S2121 to S2124;

[0049] Fig.14 yes Figure 7 A schematic diagram of another implementation of step S20;

[0050] Fig.15 yes Fig.14 The structural diagram corresponding to step S221 in FIG.

[0051] Fig.16 yes Fig.14 The structural diagram corresponding to step S222 in FIG.

[0052] Fig.17 yes Fig.14 A flow chart corresponding to an implementation method of step S223;

[0053] Fig.18 yes Fig.17 The structural diagram corresponding to steps S2131 to S2134;

[0054] Fig.19 yes Figure 5 A schematic diagram of the structure corresponding to step 300;

[0055] Fig. 20 It is a schematic diagram of a process of an embodiment of a method for manufacturing a display panel provided in the present application;

[0056] Fig.21 yes Fig. 20 The structural schematic diagram corresponding to step S1 in FIG.

[0057] Fig. 22 yes Fig. 20 A schematic flow chart of an implementation method of step S2 in FIG.

[0058] Fig.23 yes Fig. 22 A schematic flow chart of an implementation method of step S201;

[0059] Fig.24 yes Fig. 22 The structural diagram corresponding to steps S2011 and S2012;

[0060] Fig.25 yes Fig. 22 A schematic flow chart of an implementation method of step S202;

[0061] Fig.26 yes Fig.25 A schematic diagram of the structure corresponding to steps S2021 and S2022;

[0062] Fig. 27 yes Fig. 20 A schematic flow chart of another implementation of step S2;

[0063] Fig.28 yes Fig. 27 The structural diagram corresponding to steps S201 and S202;

[0064] Fig.29 yes Fig. 27 A schematic flow chart of an implementation method of step S203;

[0065] Fig.30 yes Fig.29 Schematic diagram of the structure corresponding to steps S2031 and S2032.

[0066] Description of Figure Numbers:

[0067] 100, driving substrate; 10, driving layer; 11, flat layer; 20, anode metal layer; 21, anode; 30, pixel definition layer; 31, pixel opening; 40, isolation structure; 40A, inner wall; 40B, outer wall; 41, conductive part; 42, eaves structure; 411, first isolation structure; 412, second isolation structure; 413, third isolation structure; 50, pixel groove; 51, first pixel groove; 52, second pixel groove; 53, third pixel groove; d1, first overhang width; d2, second overhang width; d3, third overhang width; w1, first extension width; w2, second extension width; w3, third extension width; 410, conductive layer; 420 , eaves layer; 60, sub-pixels; 61, light-emitting layer; 62, cathode; 610, light-emitting material layer; 620, cathode material layer; 71, first area to be etched; 72, second area to be etched; 73, third area to be etched; 74, fourth area to be etched; 75, fifth area to be etched; 76, sixth area to be etched; 81, first photoresist layer; 82, second photoresist layer; 83, third photoresist layer; 84, fourth photoresist layer; 85, fifth photoresist layer; 86, sixth photoresist layer; 87, seventh photoresist layer; 90, etching protection layer; 91, first etching protection layer; 92, second etching protection layer; 93, third etching protection layer; 200, display panel. DETAILED DESCRIPTION

[0068] The scheme of the embodiment of the present application is described in detail below in conjunction with the drawings of the specification.

[0069] In the following description, for the purpose of explanation rather than limitation, specific details such as specific system structures, interfaces, and technologies are provided to facilitate a thorough understanding of the present application.

[0070] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0071] The terms "first", "second", "third" in this application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of the features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In the embodiments of this application, all directional indications (such as up, down, left, right, front, back...) are only used to explain the relative position relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the steps or units listed, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0072] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0073] In the prior art, in the process of evaporating sub-pixels by removing the fine mask plate, an isolation structure is required to isolate the sub-pixels. The isolation structure includes a conductive part and an eaves structure, and the cathode of the sub-pixel overlaps with the conductive part to achieve electrical connection between the cathodes. The eaves structure is used to adjust the evaporation angle of the evaporation material so that the cathode can achieve good overlap with the conductive part.

[0074] However, due to the difference in the light-emitting layers of sub-pixels of different colors, sub-pixels of different colors need to be prepared successively. After the light-emitting layer and cathode of a sub-pixel of one color are vapor-deposited on the entire surface, only the light-emitting layer and cathode at the location of the sub-pixel of this color are retained, and the light-emitting layer and cathode of the sub-pixel of this color at the location of the sub-pixels of other colors need to be removed. Then, photoresist is used for exposure and development, and the light-emitting layer and cathode of the sub-pixel of another color are vapor-deposited on the entire surface, and only the light-emitting layer and cathode at the location of the sub-pixel of this color are retained, and the light-emitting layer and cathode of the sub-pixel of this color at the location of the sub-pixels of other colors need to be removed. Repeat the above steps to vapor-deposit the sub-pixels of other colors by analogy. In the process of removing the cathode, an etching solution is used to react with it to remove the cathode. However, while removing the cathode, the etching solution will also react with the conductive part, causing the conductive part to be corroded and its width to be narrowed. When the width of the conductive portion becomes narrower, it is not conducive to the overlap between the cathode and the conductive portion during the subsequent film deposition process of the sub-pixel, resulting in invalid overlap, inability to connect the electrical signal, and affecting the luminescence of the sub-pixel.

[0075] See also Figure 1 and Figure 2 , Figure 1 is a schematic structural diagram of an embodiment of a driving substrate provided by the present application, Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure at AA in the middle.

[0076] In order to solve the above technical problems, the present application provides a driving substrate 100. The driving substrate 100 includes a driving layer 10, an anode metal layer 20, a pixel definition layer 30 and an isolation structure 40 which are stacked in sequence. The isolation structure 40 surrounds a pixel groove 50. The isolation structure 40 includes a conductive portion 41 and an eaves structure 42 which are stacked in sequence. The eaves structure 42 extends the conductive portion 41 in a direction close to the pixel groove 50. In the wall thickness direction of the isolation structure 40, the width of the eaves structure 42 is equal. In the wall thickness direction of the isolation structure 40, the width of the eaves structure 42 beyond the top of the conductive portion 41 is defined as the overhang width, and the width of the eaves structure 42 beyond the bottom of the conductive portion 41 is defined as the extension width. The pixel groove 50 includes a first pixel groove 51 and a second pixel groove 52 which are formed in sequence. In the isolation structure 40 surrounding the first pixel groove 51, the overhang width is defined as the first overhang width d1, and the extension width is defined as the first extension width w1. In the isolation structure 40 surrounding the second pixel groove 52, the overhang width is defined as the second overhang width d2, and the extension width is defined as the second extension width w2. The difference between the first overhang width d1 and the second overhang width d2 is a preset fixed value, and the fixed preset value is a positive number. The difference between the first extension width w1 and the second extension width w2 is a preset fixed value.

[0077] By making the overhang width of the isolation structure 40 surrounding different pixel grooves 50 different, and the extension width different, so as to match the sub-pixel 60 (see Fig.24 ) in the preparation process of the conductive portion 41, thereby compensating the width of the corroded conductive portion 41 to ensure that the width of the conductive portion 41 of each isolation structure 40 in the final product is the same; further, by making the difference between the first overhang width d1 and the second overhang width d2 and the difference between the first extension width w1 and the second extension width w2 the same, the difference between the overhang width and the extension width in a single isolation structure 40 is ensured to remain unchanged, so that when the sub-pixel 60 is subsequently evaporated, the evaporation angle of each sub-pixel 60 can be further ensured to be consistent, which is beneficial to the cathode 62 of each sub-pixel 60 (see Fig.24 ) and the overlapping effect of the conductive portion 41 to improve the conductive overlapping effect.

[0078] It should be noted that the driving substrate 100 in the embodiment of the present application is an intermediate product in the process of preparing the display panel, and the sub-pixels 60 in the subsequent vapor-deposited display panel are vapor-deposited on the basis of the driving substrate 100.

[0079] The driving layer 10 is electrically connected to the anode metal layer 20 and is used to drive the sub-pixels 60 in the display panel to emit light. The structure and material of the driving layer 10 are not limited here and can be selected according to actual needs.

[0080] A flat layer 11 is further provided between the driving layer 10 and the anode metal layer 20 . The material of the flat layer 11 is not limited and can be selected according to actual needs.

[0081] The anode metal layer 20 includes a plurality of anodes 21 disposed at intervals. The pixel groove 50 is disposed corresponding to the anode 21 and covers the area where the corresponding anode 21 is located. The anode 21 is an electrode of the sub-pixel 60.

[0082] The pixel slot 50 is provided in correspondence with the anode 21, and covers the area where the corresponding anode 21 is located. It can be understood that one pixel slot 50 is provided in correspondence with at least one anode 21, and the orthographic projection of the pixel slot 50 on the driving layer 10 covers the orthographic projection of the corresponding anode 21 on the driving layer 10. When the pixel slot 50 is provided in correspondence with one anode 21, the orthographic projection of the pixel slot 50 on the driving layer 10 covers the orthographic projection of the corresponding one anode 21 on the driving layer 10. When the pixel slot 50 is provided in correspondence with multiple anodes 21, the orthographic projection of the pixel slot 50 on the driving layer 10 covers the orthographic projection of the corresponding multiple anodes 21 on the driving layer 10.

[0083] In this embodiment, one pixel groove 50 is mainly disposed corresponding to one anode 21 .

[0084] The pixel definition layer 30 may be an inorganic material, such as silicon oxide, silicon nitride, or silicon oxide nitride. The thickness of the pixel definition layer 30 is 0.2 micrometers to 1 micrometer. In a specific embodiment, the thickness of the pixel definition layer 30 is 0.4 micrometers to 0.6 micrometers.

[0085] In other embodiments, the pixel definition layer 30 may be other materials and / or the thickness of the pixel definition layer 30 may be other values.

[0086] The isolation structure 40 surrounds the pixel groove 50, and it can be understood that the sidewall of the pixel groove 50 is the isolation structure 40. The isolation structure 40 is a ring-shaped structure.

[0087] In this embodiment, in the outer side wall 40B of the isolation structure 40 , the outer wall surface of the eave structure 42 and the outer wall surface of the conductive portion 41 are aligned in a direction perpendicular to the pixel definition layer 30 .

[0088] In the wall thickness direction of the isolation structure 40, the widths of the eaves structures 42 are all equal. That is to say, in the embodiment of the present application, the width of each eaves structure 42 is ensured to remain unchanged, and the width of the conductive part 41 is adjusted to differentiate the overhang width and the extension width of the isolation structure 40 surrounding different pixel grooves 50, thereby compensating for the width of the corroded conductive part 41 to ensure that the width of the conductive part 41 of each isolation structure 40 is the same in the final product.

[0089] The eaves structure 42 extends the conductive portion 41 in the direction close to the pixel groove 50, so that when the sub-pixel 60 is subsequently evaporated in the pixel groove 50, the evaporation angle can be adjusted through the edge of the eaves structure 42. It should be understood that in the wall thickness direction of the isolation structure 40, the greater the width of the conductive portion 41 extended by the eaves structure 42 in the direction close to the pixel groove 50, the less likely the cathode 62 of the evaporated sub-pixel 60 is to overlap with the conductive portion 41.

[0090] It is defined that the width of the eaves structure 42 beyond the top of the conductive part 41 in the wall thickness direction of the isolation structure 40 is the overhang width, and the width of the eaves structure 42 beyond the bottom of the conductive part 41 is the extension width. That is, in the wall thickness direction of the isolation structure 40, the distance between the inner edge of the lower surface of the eaves structure 42 and the inner edge of the upper surface of the conductive part 41 is the overhang width, and the distance between the inner edge of the lower surface of the eaves structure 42 and the inner edge of the lower surface of the conductive part 41 is the extension width.

[0091] It should be noted that the inner side and the outer side in the embodiment of the present application refer to two opposite sides in the wall thickness direction of the isolation structure 40 .

[0092] The pixel slots 50 include a first pixel slot 51 and a second pixel slot 52 which are formed in sequence. It can be understood that the first pixel slot 51 is prepared before the second pixel slot 52. The pixel slots 50 may also include multiple pixel slots 50 divided according to the order of preparation. Here, only two types of pixel slots 50 are used as examples for description.

[0093] There is no limitation on the shapes and sizes of the first pixel slot 51 and the second pixel slot 52 , and they can be selected according to actual needs.

[0094] In the isolation structure 40 surrounding the first pixel groove 51, the overhang width is defined as the first overhang width d1, and the extension width is defined as the first extension width w1, that is, the overhang width in the isolation structure 40 surrounding the first pixel groove 51 is the first overhang width d1, and the extension width in the isolation structure 40 surrounding the first pixel groove 51 is the first extension width w1.

[0095] The first overhang width d1 is greater than or equal to 0.4 micrometers and less than or equal to 1 micrometer, and the deviation of the first overhang width d1 satisfies 0≤d1≤0.2 micrometers, so as to better overlap the cathode 62 in the sub-pixel 60 with the conductive portion 41, and to connect the light-emitting layers 61 (see Fig.24 )cut off.

[0096] In the isolation structure 40 surrounding the second pixel groove 52, the overhang width is defined as the second overhang width d2, and the extension width is defined as the second extension width w2, that is, the overhang width in the isolation structure 40 surrounding the second pixel groove 52 is the second overhang width d2, and the extension width in the isolation structure 40 surrounding the second pixel groove 52 is the second extension width w2.

[0097] The overhang width in the isolation structure 40 surrounding the first pixel groove 51 is a first overhang width d1 , and the extension width in the isolation structure 40 surrounding the first pixel groove 51 is a second extension width w2 .

[0098] The difference between the first overhang width d1 and the second overhang width d2 is a preset fixed value, and the fixed preset value is a positive number. The difference between the first extension width w1 and the second extension width w2 is a preset fixed value. It can be understood that the difference between the first overhang width d1 and the second overhang width d2 is the first overhang difference, and the difference between the first extension width w1 and the second extension width w2 is the first extension difference. The first overhang difference is equal to the first extension difference.

[0099] The preset fixed value is less than or equal to 3 microns to control the amount of corrosion on the conductive part 41 during the subsequent evaporation of the sub-pixel 60. It can be understood that the amount of corrosion on the conductive part 41 will not be infinite during the subsequent evaporation of the sub-pixel 60, and selecting the preset fixed value within this range is helpful to compensate the conductive parts 41 of different isolation structures 40 in a targeted and differentiated manner.

[0100] In the direction perpendicular to the pixel definition layer 30, the thickness of the eaves structure 42 is 0.1 micrometer to 0.3 micrometer, and the thickness of the conductive part 41 is 0.6 micrometer to 1.5 micrometer. The eaves structure 42 is conductive, and the material of the eaves structure 42 is different from that of the conductive part 41; or, the eaves structure 42 is insulating.

[0101] When the eaves structure 42 is conductive, the eaves structure 42 can be a metal film layer, for example, aluminum, copper, nickel, silver, molybdenum, titanium or other metals; the material of the eaves structure 42 is different from the material of the conductive part 41, and the chemical reaction rate is also different, so as to ensure that when the conductive part 41 and the eaves structure 42 are etched, the eaves structure 42 can extend out of the conductive part 41.

[0102] When the eaves structure 42 has insulation properties, the eaves structure 42 can be an inorganic film layer, such as silicon oxide, silicon nitrogen compound, or silicon oxide nitrogen compound. The eaves structure 42 can also be an organic compound film layer, such as soluble polytetrafluoroethylene (PFA), PI (Polyimide) and other materials.

[0103] This embodiment is described by taking the eave structure 42 as an insulating material as an example.

[0104] The isolation structure 40 surrounding the first pixel groove 51 is defined as a first isolation structure 411, and the isolation structure 40 surrounding the second pixel groove 52 is defined as a second isolation structure 412. In the adjacent first pixel groove 51 and the second pixel groove 52, the outer sidewall 40B of the first isolation structure 411 is in contact with the outer sidewall 40B of the second isolation structure 412, and is flush in a direction parallel to the pixel definition layer 30.

[0105] The first pixel groove 51 is prepared before the second pixel groove 52 , so that the inner sidewall 40A of the first isolation structure 411 is formed first and the inner sidewall 40A of the second isolation structure 412 is formed later.

[0106] It should be noted that, in the subsequent process of evaporating the sub-pixel 60 on the evaporation driving substrate 100, the sub-pixel 60 is formed by evaporation in the first pixel groove 51 and the second pixel groove 52 in sequence, and the colors of the sub-pixel 60 formed by evaporation in the first pixel groove 51 and the second pixel groove 52 are different.

[0107] It can be understood that, in the wall thickness direction of the isolation structure 40, by ensuring that the width of the eaves structure 42 in each isolation structure 40 remains unchanged, the width of the conductive part 41 in the isolation structure 40 formed in sequence is increased in sequence, so that the width of the eaves structure 42 in the isolation structure 40 formed in sequence extending out of the conductive part 41 is reduced in sequence. Further, in the subsequent evaporation of the sub-pixels 60, the evaporation order of the sub-pixels 60 of different colors is ensured to be consistent with the formation order of the pixel grooves 50 where the sub-pixels 60 of the same color are located, so as to match the corrosion of the conductive part 41 in the preparation process of the sub-pixels 60 set in the pixel grooves 50, so as to compensate for the width of the corroded conductive part 41, so as to ensure that the width of the conductive part 41 of each isolation structure 40 in the final product is the same, so as to achieve the effect of improving the overlap between the cathode 62 of each sub-pixel 60 and the conductive part 41.

[0108] In this embodiment, the pixel definition layer 30 is etched to expose the anode 21, so that the pixel definition layer 30 does not need to be etched again in the subsequent process of evaporating the sub-pixel 60, which can simplify the steps. Specifically, the pixel definition layer 30 has a plurality of pixel openings 31 arranged at intervals. The pixel openings 31 are arranged one-to-one with the anode 21. The pixel openings 31 at least partially expose the corresponding anode 21. That is, the anode 21 is exposed to the pixel definition layer 30 through the pixel openings 31.

[0109] In other embodiments, the pixel definition layer 30 may not be etched, and the pixel opening 31 may be obtained by etching before evaporating the sub-pixel 60 .

[0110] The driving substrate 100 may further include a protective film (not shown), which is disposed on the side of the isolation structure 40 away from the driving layer 10. The protective film is used to protect the conductive portion 41 from corrosion by the external environment during storage and transportation of the driving substrate 100. It should be understood that when the sub-pixel 60 is evaporated on the driving substrate 100, the protective film needs to be removed.

[0111] See also Figures 1 to 4 , Figure 3 is a schematic structural diagram of a second embodiment of a driving substrate provided by the present application, Figure 4 It is a schematic diagram of the arrangement structure of an embodiment of the pixel groove and isolation structure provided in the present application.

[0112] The second embodiment of the driving substrate 100 provided in the present application is basically similar in structure to the first embodiment of the driving substrate 100 provided in the present application, except that the pixel groove 50 further includes a third pixel groove 53, and the second pixel groove 52 and the third pixel groove 53 are formed in sequence.

[0113] In this embodiment, the pixel slot 50 further includes a third pixel slot 53, and the second pixel slot 52 and the third pixel slot 53 are formed sequentially. That is, the pixel slot 50 includes a first pixel slot 51, a second pixel slot 52 and a third pixel slot 53 which are formed sequentially.

[0114] In the isolation structure 40 surrounding the third pixel groove 53, the overhang width is defined as the third overhang width d3, and the extension width is defined as the third extension width w3. That is, the overhang width in the isolation structure 40 surrounding the third pixel groove 53 is the third overhang width d3, and the extension width in the isolation structure 40 surrounding the third pixel groove 53 is the third extension width w3.

[0115] The difference between the second overhang width d2 and the third overhang width d3 is a preset fixed value. The difference between the second extension width w2 and the third extension width w3 is a preset fixed value. That is, the difference between the second overhang width d2 and the third overhang width d3 is the second overhang difference, and the difference between the second extension width w2 and the third extension width w3 is the second extension difference. The second overhang difference is equal to the second extension difference and equal to the first overhang difference.

[0116] This embodiment can also achieve the effect of improving the overlap between the cathode 62 of the sub-pixel 60 and the conductive portion 41. Compared with the first embodiment of the driving substrate 100 provided in this application, the driving substrate 100 of this embodiment can evaporate more colors of the sub-pixels 60 during the subsequent evaporation of the sub-pixels 60.

[0117] In other embodiments, the pixel grooves 50 may further include three or more pixel grooves 50 formed sequentially. In two pixel grooves 50 formed adjacently in sequence, the difference between the overhang width in the isolation structure 40 surrounding the first pixel groove 50 and the overhang width in the isolation structure 40 surrounding the pixel groove 50 formed later is a preset fixed value, and the difference between the extension width in the isolation structure 40 surrounding the first pixel groove 50 and the extension width in the isolation structure 40 surrounding the pixel groove 50 formed later is a preset fixed value. And so on.

[0118] The arrangement of the pixel slots 50 is not limited here and can be selected according to actual needs. Figure 4 As shown, the first pixel groove 51 and the second pixel groove 52 are located on the same side of the third pixel groove 53. The first pixel groove 51, the second pixel groove 52 and the third pixel groove 53 and the isolation structure 40 surrounding the pixel groove 50 form a minimum repeating unit. The repeating unit is rectangular.

[0119] See also Figure 2 , Figure 5 and Figure 6 , Figure 5is a schematic flow chart of a first embodiment of a method for preparing a drive substrate provided in the present application, Figure 6 yes Figure 5 Schematic diagram of the structure corresponding to step S100.

[0120] The present application provides a method for preparing a driving substrate, which is used to prepare the above-mentioned driving substrate.

[0121] In one embodiment, a method for preparing a driving substrate includes:

[0122] S100: providing a driving layer, an anode metal layer, and a pixel definition layer which are stacked in sequence.

[0123] Specifically, a driving layer 10 , an anode metal layer 20 , and a pixel definition layer 30 which are stacked in sequence are provided.

[0124] The driving substrate 100 further includes a planar layer 11 , which is located between the driving layer 10 and the anode metal layer 20 .

[0125] S200: An isolation structure is formed on a side of the pixel definition layer away from the driving layer; wherein the isolation structure is arranged to form a pixel groove; the isolation structure includes a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends the conductive part in the direction close to the pixel groove; in the wall thickness direction of the isolation structure, the width of the eaves structure is equal; wherein, defined in the wall thickness direction of the isolation structure, the width of the eaves structure beyond the top of the conductive part is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width; the pixel groove includes a first pixel groove and a second pixel groove which are formed in sequence; in the isolation structure surrounding the first pixel groove, the overhang width is defined as the first overhang width, and the extension width is defined as the first extension width; in the isolation structure surrounding the second pixel groove, the overhang width is defined as the second overhang width, and the extension width is defined as the second extension width; the difference between the first overhang width and the second overhang width is a preset fixed value, and the fixed preset value is a positive number; the difference between the first extension width and the second extension width is a preset fixed value.

[0126] The isolation structure 40 and the pixel groove 50 are not described in detail here, and reference is made to the above description.

[0127] See also Figure 2 , Figure 7 and Figure 8 , Figure 7 yes Figure 5 A schematic diagram of a flow chart of an implementation method of step S200, Figure 8 yes Figure 7 Schematic diagram of the structure corresponding to step S10.

[0128] In one embodiment, the step of forming an isolation structure on a side of the pixel definition layer away from the driving layer in step S200 includes:

[0129] S10: forming a conductive layer and an eaves layer in sequence on a side of the pixel definition layer away from the driving layer.

[0130] Specifically, a conductive layer 410 and an eaves layer 420 are sequentially formed on a side of the pixel definition layer 30 away from the driving layer 10 .

[0131] S20: etching the eaves layer and the conductive layer to form a pixel groove; the sidewall of the pixel groove forms an isolation structure.

[0132] Specifically, the eaves layer 420 and the conductive layer 410 are etched to form the pixel groove 50. The sidewall of the pixel groove 50 forms the isolation structure 40. The conductive layer 410 is etched to obtain the conductive part 41, and the eaves layer 420 is etched to obtain the eaves structure 42.

[0133] It should be noted that the isolation structures 40 surrounding different middle pixel grooves 50 are not prepared by the same process, but need to be prepared by the same process multiple times.

[0134] See also Figure 2 and Fig. 9 , Fig. 9 yes Figure 7 Schematic diagram of the process of step S20 in an implementation manner.

[0135] In a specific implementation, step S20: etching the eaves layer and the conductive layer to form a pixel groove; the sidewall of the pixel groove forms an isolation structure, including:

[0136] S211: Determine a first area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the first area to be etched to form a first pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the first area to be etched is a first etching concentration, and the etching reaction time is a first reaction time.

[0137] Specifically, a first area to be etched 71 is determined on the eaves layer 420 by exposure and development, and the eaves layer 420 and the conductive layer 410 at the first area to be etched 71 are etched to form a first pixel groove 51 in the pixel groove 50; wherein the concentration of the etching solution for etching the conductive layer 410 at the first area to be etched 71 is a first etching concentration, and the etching reaction time is a first reaction time.

[0138] The first etched regions are disposed in one-to-one correspondence with the first pixel grooves 51 .

[0139] Here, there is no restriction on the etching solution, the first etching concentration and the first reaction time, and they are selected according to actual needs.

[0140] See also Figure 2 , Fig.10 and Fig.11 , Fig.10 yes Fig. 9 A flow chart of an implementation method of step S211 in FIG. Fig.11 yes Fig.10 Schematic diagram of the structure corresponding to steps S2111 to S2114.

[0141] In a specific embodiment, in step S211, the step of determining a first area to be etched on the eaves layer, and etching the eaves layer and the conductive layer at the first area to be etched to form a first pixel groove in the pixel groove includes:

[0142] S2111: Dispose a first photoresist layer on a side of the eaves layer away from the conductive layer.

[0143] S2112: exposing and developing the first photoresist layer, determining a first area to be etched on the eaves layer, and removing the first photoresist layer at the first area to be etched.

[0144] S2113: Etching to remove the eaves layer in the first area to be etched.

[0145] Specifically, when the eaves layer 420 is conductive, wet etching can be used to remove the eaves layer 420 in the first area to be etched 71. When the eaves layer 420 is insulating, dry etching can be used to remove the eaves layer 420 in the first area to be etched 71.

[0146] In this embodiment, the eaves layer 420 is insulating, and the eaves layer 420 in the first to-be-etched area 71 is removed by dry etching.

[0147] In other embodiments, other methods may also be used to remove the eaves layer 420 at the first to-be-etched area 71 .

[0148] S2114: etching and removing the conductive layer in the first area to be etched to obtain a first pixel groove. Specifically, wet etching is used to remove the conductive layer 410 in the first area to be etched 71 to obtain the first pixel groove 51.

[0149] S212: Determine a second area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the second area to be etched to form a second pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the second area to be etched is a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time.

[0150] Specifically, a second area to be etched 72 is determined on the eaves layer 420 by exposure and development, and the eaves layer 420 and the conductive layer 410 at the second area to be etched 72 are etched to form a second pixel groove 52 in the pixel groove 50. The concentration of the etching solution for etching the conductive layer 410 at the second area to be etched 72 is a second etching concentration, and the etching reaction time is a second reaction time. The second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time.

[0151] The second etched areas are disposed in one-to-one correspondence with the second pixel grooves 52 .

[0152] The etching solution for etching the conductive layer 410 at the second to-be-etched area 72 is the same as the etching solution for etching the conductive layer 410 at the first to-be-etched area 71 , so as to calculate the preset fixed value, thereby more accurately compensating the width of the conductive portion 41 .

[0153] The second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time, so that the width of the conductive portion 41 etched in the second to-be-etched area 72 is smaller than the width of the conductive portion 41 etched in the first to-be-etched area 71, thereby ensuring that the width of the conductive portion 41 in the subsequently formed isolation structure 40 is greater than the width of the conductive portion 41 in the previously formed isolation structure 40, so that in the subsequent evaporation process of the sub-pixel 60, the corrosion of the conductive portion 41 in the preparation process of the sub-pixel 60 arranged in the pixel groove 50 can be matched, thereby compensating for the width of the corroded conductive portion 41 to ensure that the widths of the conductive portions 41 of each isolation structure 40 in the final product are the same.

[0154] See also Figure 2 , Fig.12 and Fig.13 , Fig.12 yes Fig. 9 A flow chart of an implementation method of step S212 in FIG. Fig.13 yes Fig.12 Schematic diagram of the structure corresponding to steps S2121 to S2124.

[0155] In a specific embodiment, in step S212, determining a second area to be etched on the eaves layer, and etching the eaves layer and the conductive layer at the second area to be etched to form a second pixel groove in the pixel groove includes:

[0156] S2121: remove the first photoresist layer, and set a second photoresist layer on the side of the eaves layer away from the conductive layer.

[0157] S2122: exposing and developing the second photoresist layer, determining a second area to be etched on the eaves layer, and removing the second photoresist layer at the second area to be etched.

[0158] S2123: Etching to remove the eaves layer in the second area to be etched.

[0159] Specifically, the eaves layer 420 in the second to-be-etched area 72 is removed by etching.

[0160] In this embodiment, the eaves layer 420 is insulating, and the eaves layer 420 in the second to-be-etched area 72 is removed by dry etching.

[0161] S2124: etching and removing the conductive layer at the second to-be-etched area to obtain a second pixel groove.

[0162] Specifically, the conductive layer 410 at the second to-be-etched area 72 is removed by wet etching to obtain the first pixel groove 51 .

[0163] See also Figure 3 , Figures 14 to 16 , Fig.14 yes Figure 7 A schematic flow chart of another implementation of step S20, Fig.15 yes Fig.14 The structural diagram corresponding to step S221 in FIG. Fig.16 yes Fig.14 Schematic diagram of the structure corresponding to step S222 in FIG.

[0164] In another specific embodiment, step S20: etching the eaves layer and the conductive layer to form a pixel groove; the sidewall of the pixel groove forms an isolation structure, including:

[0165] S221: Determine a first area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the first area to be etched to form a first pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the first area to be etched is a first etching concentration, and the etching reaction time is a first reaction time.

[0166] For the specific steps, please refer to step S211, which will not be repeated here.

[0167] S222: Determine a second area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the second area to be etched to form a second pixel groove in the pixel groove; wherein, the concentration of the etching solution for etching the conductive layer at the second area to be etched is a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time.

[0168] For the specific steps, please refer to step S212, which will not be repeated here.

[0169] S223: Determine a third area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the third area to be etched to form a third pixel groove in the pixel groove; wherein, the concentration of the etching solution for etching the conductive layer at the third area to be etched is a third etching concentration, and the etching reaction time is a third reaction time; the third etching concentration is less than the second etching concentration, and / or the third reaction time is less than the second reaction time.

[0170] Specifically, a third area to be etched 73 is determined on the eaves layer 420 by exposure and development, and the eaves layer 420 and the conductive layer 410 at the third area to be etched 73 are etched to form a third pixel groove 53 in the pixel groove 50. The concentration of the etching solution for etching the conductive layer 410 at the third area to be etched 73 is a third etching concentration, and the etching reaction time is a third reaction time. The third etching concentration is less than the second etching concentration, and / or the third reaction time is less than the second reaction time.

[0171] The third etched regions are disposed in one-to-one correspondence with the third pixel grooves 53 .

[0172] The etching solution used to etch the conductive layer 410 in the third to-be-etched area 73 and the etching solution used to etch the conductive layer 410 in the first to-be-etched area 71 are the same etching solution.

[0173] The third etching concentration is less than the first etching concentration and less than the second etching concentration; and / or the third reaction time is less than the first reaction time and less than the second reaction time, so as to ensure that the width of the conductive portion 41 etched in the third to-be-etched area 73 is less than the width of the conductive portion 41 etched in the second to-be-etched area 72. The specific effects are described above and will not be repeated here.

[0174] See also Figure 3 , Fig.17 and Fig.18 , Fig.17 yes Fig.14 The flowchart corresponding to the implementation method of step S223 is as follows: Fig.18 yes Fig.17 Schematic diagram of the structure corresponding to steps S2131 to S2134.

[0175] In a specific embodiment, in step S223, the step of determining a third area to be etched on the eaves layer, and etching the eaves layer and the conductive layer at the third area to be etched to form a third pixel groove in the pixel groove includes:

[0176] S2131: remove the second photoresist layer, and set a third photoresist layer on the side of the eaves layer away from the conductive layer.

[0177] S2132: exposing and developing the third photoresist layer, determining a third area to be etched on the eaves layer, and removing the third photoresist layer at the third area to be etched.

[0178] S2133: Etching to remove the eaves layer in the third area to be etched.

[0179] S2134: etching and removing the conductive layer at the third to-be-etched area to obtain a third pixel groove.

[0180] Steps S2131 to S2134 and steps S2111 to S2114, for specific steps, please refer to steps S2111 to S2114, which will not be repeated here.

[0181] See also Figure 3 and Fig.19 , Fig.19 yes Figure 5 Schematic diagram of the structure corresponding to step 300.

[0182] After step S200, the following steps are also included:

[0183] Step S300: forming a pixel opening on the pixel definition layer, wherein the pixel groove is arranged corresponding to the pixel opening and covers the corresponding pixel opening.

[0184] Specifically, the third photoresist layer 83 is removed, and a fourth photoresist layer 84 is disposed on the side of the eaves layer 420 away from the pixel definition layer 30. The fourth photoresist layer 84 is exposed and developed to define a fourth to-be-etched area 74 on the pixel definition layer 30. The pixel definition layer 30 at the fourth to-be-etched area 74 is removed to form a pixel opening 31.

[0185] The fourth to-be-etched region 74 is disposed corresponding to the pixel groove 50 and is located inside the pixel groove 50 .

[0186] The structure of the pixel opening 31 is not described in detail here, and reference is made to the above description.

[0187] It should be understood that in other implementations, step S300 may not be included.

[0188] See also Figure 2 , Fig. 20 and Fig.21 , Fig. 20 is a schematic flow chart of an embodiment of a method for preparing a display panel provided in the present application, Fig.21 yes Fig. 20 Schematic diagram of the structure corresponding to step S1 in FIG.

[0189] The present application provides a method for manufacturing a display panel. The display panel 200 includes a sub-pixel 60 and an etching protection layer 90 disposed on one side of the sub-pixel 60. The display panel 200 also includes a driving layer 10, an anode metal layer 20, a pixel definition layer 30, and an isolation structure 40. The sub-pixel 60 includes an anode 21, a light-emitting layer 61, and a cathode 62 that are stacked in sequence.

[0190] The method for preparing a display panel includes:

[0191] S1: Provide a driving substrate.

[0192] Specifically, a driving substrate 100 is provided. The driving substrate 100 is the driving substrate 100 mentioned above, and the structure of the driving substrate 100 is not described here, and reference is made to the above description.

[0193] S2: forming a sub-pixel by vapor deposition in the pixel groove, and making the cathode of the sub-pixel overlap with the conductive part; the sub-pixel includes a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in the first pixel groove, and the second sub-pixel is formed in the second pixel groove.

[0194] See also Figure 2 , Figure 22 to Figure 24 , Fig. 22 yes Fig. 20 A schematic diagram of a flow chart of an implementation method of step S2 in FIG. Fig.23 yes Fig. 22 A schematic flow chart of an implementation method of step S201 in FIG. Fig.24 yes Fig. 22 Schematic diagram of the structure corresponding to steps S2011 and S2012.

[0195] In a specific embodiment, the step of forming a sub-pixel by evaporation in the pixel groove and making the cathode of the sub-pixel overlap with the conductive part in step S2 includes:

[0196] S201: evaporating a first sub-pixel in a first pixel groove.

[0197] Specifically, the light emitting layer 61 and the cathode 62 of the first sub-pixel 60 are formed in the first pixel groove 51 by evaporation.

[0198] In one implementation, step S201 specifically includes:

[0199] S2011: forming a light emitting material layer and a cathode material layer of a first sub-pixel and a first etching protection layer in sequence on the entire surface of the driving substrate.

[0200] Specifically, the luminescent material layer 610 and cathode material layer 620 of the first sub-pixel 60 and the first etching protection layer 91 are sequentially deposited on the entire surface of the driving substrate 100. The first etching protection layer 91 is used to protect the first sub-pixel 60 from etching when the sub-pixels 60 of other colors are deposited.

[0201] S2012: Disposing a fifth photoresist layer on the side of the cathode material layer away from the driving substrate, and determining a fourth area to be etched; sequentially etching the fifth photoresist layer, the first etching protection layer, the light-emitting material layer and the cathode material layer at the fourth area to be etched to form a first sub-pixel in an area outside the fourth area to be etched.

[0202] Specifically, the fifth photoresist layer 85 , the first etching protection layer 91 , the light emitting material layer 610 and the cathode material layer 620 at the fourth area to be etched 74 are sequentially etched to form the first sub-pixel 60 in an area outside the fourth area to be etched 74 .

[0203] It should be noted that the cathode material layer 620 is etched by wet etching. The first etching protection layer 91 outside the fourth to-be-etched area 74 is not removed, that is, the first etching protection layer 91 is also provided on the side of the first sub-pixel 60 away from the driving substrate 100. The first etching protection layer 91 covers the first sub-pixel 60 and the inner wall surface of the isolation structure 40 surrounding the first pixel groove 51, so that the cathode 62 of the first sub-pixel 60 and the conductive portion 41 in the isolation structure 40 will not be etched again during the subsequent evaporation of the sub-pixels 60 of other colors.

[0204] The first sub-pixel 60 is located in the first pixel groove 51 .

[0205] It should be understood that when etching the cathode material layer 620 at the fourth area to be etched 74, the etching solution for etching the cathode material layer 620 will corrode the side walls of the second pixel groove 52, causing the width of the conductive portion 41 in the isolation structure 40 surrounding the second pixel groove 52 to become narrower, so that the overhang width in the second isolation structure 412 is equal to the overhang width in the first isolation structure 411, and the extension width in the second isolation structure 412 is equal to the extension width in the first isolation structure 411, thereby improving the overlap consistency between the cathode 62 and the conductive portion 41 of each sub-pixel 60.

[0206] The preset fixed value is the etching width of the conductive portion 41 by the etching solution etching the cathode material layer 620 when etching the cathode material layer 620 at the fourth to-be-etched area 74 .

[0207] S202: evaporating a second sub-pixel in the second pixel groove.

[0208] Specifically, the light emitting layer 61 and the cathode 62 of the second sub-pixel 60 are formed in the second pixel groove 52 by evaporation.

[0209] See also Figure 2 , Fig.25 and 26 , Fig.25 yes Fig. 22 A schematic diagram of a flow chart of an implementation method of step S202 in FIG. Fig.26 yes Fig.25 Schematic diagram of the structure corresponding to steps S2021 and S2022.

[0210] In one implementation, step S202 specifically includes:

[0211] S2021: removing the fifth photoresist layer, and sequentially forming a light-emitting material layer and a cathode material layer of a second sub-pixel, and a second etching protection layer on the entire surface of the driving substrate.

[0212] S2022: Setting a sixth photoresist layer on the side of the cathode material layer forming the second sub-pixel away from the driving substrate, and determining a fifth area to be etched; sequentially etching the sixth photoresist layer, the second etching protection layer, the light-emitting material layer and the cathode material layer forming the second sub-pixel at the fifth area to be etched to form a second sub-pixel in an area outside the fifth area to be etched.

[0213] Steps S2021 to S2022 are similar to steps S2011 to S2012, and are described above and will not be repeated here.

[0214] It should be noted that the second etching protection layer 92 outside the fifth to-be-etched area 75 is not removed, that is, the second etching protection layer 92 is still disposed on the side of the second sub-pixel 60 away from the driving substrate 100 .

[0215] The second sub-pixel 60 is located in the second pixel groove 52 .

[0216] It should be understood that since the first etching protection layer 91 is provided on the side of the first sub-pixel 60 away from the driving substrate 100, when etching the cathode material layer 620 at the fifth area to be etched 75, the etching solution for etching the cathode material layer 620 will not corrode the side walls of the first pixel groove 51 and the cathode 62 of the first sub-pixel 60.

[0217] See also Figure 3 , Fig. 27 and Fig.28 , Fig. 27 yes Fig. 20 A schematic flow chart of another implementation of step S2 in FIG. Fig.28 yes Fig. 27 Schematic diagram of the structure corresponding to steps S201 and S202.

[0218] In another specific embodiment, the step of forming a sub-pixel by evaporation in the pixel groove and making the cathode of the sub-pixel overlap with the conductive part in step S2 includes:

[0219] S201: evaporating a first sub-pixel in a first pixel groove.

[0220] The specific steps refer to the above description and will not be repeated here.

[0221] It should be understood that when etching the cathode material layer 620 at the fourth area to be etched 74, the etching solution for etching the cathode material layer 620 will corrode the side walls of the second pixel groove 52 and the side walls of the third pixel groove 53, causing the width of the conductive portion 41 in the isolation structure 40 surrounding the second pixel groove 52 to be narrowed by a preset fixed value, and the width of the conductive portion 41 in the isolation structure 40 surrounding the third pixel groove 53 to be narrowed by a preset fixed value, so that the overhang width in the second isolation structure 412 is equal to the overhang width in the first isolation structure 411, and the extension width in the second isolation structure 412 is equal to the extension width in the first isolation structure 411, thereby improving the overlap consistency between the cathode 62 and the conductive portion 41 of each sub-pixel 60.

[0222] The preset fixed value is the etching width of the conductive portion 41 by the etching solution etching the cathode material layer 620 when etching the cathode material layer 620 at the fourth to-be-etched area 74 .

[0223] S202: evaporating a second sub-pixel in the second pixel groove.

[0224] The specific steps refer to the above description and will not be repeated here.

[0225] It should be understood that when etching the cathode material layer 620 at the fifth area to be etched 75, the etching solution for etching the cathode material layer 620 will corrode the side wall of the third pixel groove 53, causing the width of the conductive portion 41 in the isolation structure 40 surrounding the third pixel groove 53 to be narrowed again by a preset fixed value, so that the overhang width in the third isolation structure 41340 is equal to the overhang width in the first isolation structure 411, and the extension width in the third isolation structure 41340 is equal to the extension width in the first isolation structure 411, thereby improving the overlap consistency between the cathode 62 and the conductive portion 41 of each sub-pixel 60.

[0226] The preset fixed value is the etching width of the conductive portion 41 by the etching solution etching the cathode material layer 620 when etching the cathode material layer 620 at the fifth to-be-etched area 75 .

[0227] That is to say, due to the evaporation process of the sub-pixel 60, the side wall of the pixel groove 50 where the sub-pixel 60 is formed later will be etched at least once by the etching solution for etching the cathode 62 material. By performing width compensation on the side wall of the pixel groove 50 where the sub-pixel 60 is formed later, the corrosion of the conductive part 41 in the preparation process of the sub-pixel 60 disposed in the pixel groove 50 is matched, thereby ensuring that the width of the conductive part 41 of each isolation structure 40 in the final product is the same, thereby improving the overlap consistency between the cathode 62 and the conductive part 41 of each sub-pixel 60, and achieving the purpose of improving the overlap effect.

[0228] S203: evaporating a third sub-pixel in the third pixel groove.

[0229] Specifically, the light emitting layer 61 and the cathode 62 of the third sub-pixel 60 are formed in the third pixel groove 53 by evaporation.

[0230] See also Figure 3 , Fig.29 and Fig.30 , Fig.29 yes Fig. 27 A schematic flow chart of an implementation method of step S203 in FIG. Fig.30 yes Fig.29 Schematic diagram of the structure corresponding to steps S2031 and S2032.

[0231] In one embodiment, step S203: evaporating a third sub-pixel in the third pixel groove comprises:

[0232] S2031: removing the sixth photoresist layer, and sequentially forming a light emitting material layer and a cathode material layer of a third sub-pixel, and a third etching protection layer on the entire surface of the driving substrate.

[0233] Specifically, the sixth photoresist layer 86 is removed, and the light emitting material layer 610 and the cathode material layer 620 of the third sub-pixel 60 and the third etching protection layer 9390 are sequentially formed on the entire surface of the driving substrate 100. The third etching protection layer 9390 is used to protect the third sub-pixel 60 from being etched when the sub-pixels 60 of other colors are evaporated.

[0234] S2032: Setting a seventh photoresist layer on the side of the cathode material layer forming the third sub-pixel away from the driving substrate, and determining a sixth area to be etched; sequentially etching the seventh photoresist layer, the third etching protection layer, the light-emitting material layer and the cathode material layer forming the third sub-pixel at the sixth area to be etched to form a third sub-pixel in an area outside the sixth area to be etched.

[0235] Steps S2031 to S2032 are similar to steps S2021 to S2022 and will not be repeated here. Please refer to the above description.

[0236] The third sub-pixel 60 is located in the third pixel groove 53. The seventh photoresist layer 87 needs to be removed to form the third sub-pixel 60C.

[0237] It should be noted that the first etching protection layer 91, the second etching protection layer 92 and the third etching protection layer 9390 in the embodiment of the present application are all etching protection layers 90, but the preparation order and the setting position are different, but the functions are the same.

[0238] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0239] The above are only implementation methods of the present application, and are not intended to limit the patent protection scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for preparing a driving substrate, characterized in that: include: Providing a driving layer, an anode metal layer, and a pixel definition layer stacked in sequence; forming an isolation structure on a side of the pixel definition layer away from the driving layer; In which, the isolation structure is arranged to form a pixel groove; the isolation structure includes a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends the conductive part in the direction close to the pixel groove; in which, defined in the wall thickness direction of the isolation structure, the width of the eaves structure beyond the top of the conductive part is the overhang width, and the width of the eaves structure beyond the bottom of the conductive part is the extension width; the pixel groove includes a first pixel groove and a second pixel groove which are formed in sequence; in the isolation structure surrounding the first pixel groove, the overhang width is defined as a first overhang width, and the extension width is defined as a first extension width; in the isolation structure surrounding the second pixel groove, the overhang width is defined as a second overhang width, and the extension width is defined as a second extension width; the difference between the first overhang width and the second overhang width is a preset fixed value, and the fixed preset value is a positive number; the difference between the first extension width and the second extension width is the preset fixed value.

2. The method for preparing a driving substrate according to claim 1, characterized in that: The isolation structure is formed on a side of the pixel definition layer away from the driving layer, comprising: forming a conductive layer and an eaves layer in sequence on a side of the pixel definition layer away from the driving layer; The eaves layer and the conductive layer are etched to form a pixel groove; the sidewall of the pixel groove forms the isolation structure.

3. The method for preparing a driving substrate according to claim 2, characterized in that: The etching of the eaves layer and the conductive layer to form a pixel groove comprises: Determine a first area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the first area to be etched to form a first pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the first area to be etched is a first etching concentration, and the etching reaction time is a first reaction time; A second area to be etched is determined on the eaves layer, and the eaves layer and the conductive layer at the second area to be etched are etched to form a second pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the second area to be etched is a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time.

4. The method for preparing a driving substrate according to claim 2, characterized in that: The etching of the eaves layer and the conductive layer to form a pixel groove comprises: Determine a first area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the first area to be etched to form a first pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the first area to be etched is a first etching concentration, and the etching reaction time is a first reaction time; Determine a second area to be etched on the eaves layer, and etch the eaves layer and the conductive layer at the second area to be etched to form a second pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the second area to be etched is a second etching concentration, and the etching reaction time is a second reaction time; the second etching concentration is less than the first etching concentration, and / or the second reaction time is less than the first reaction time; A third area to be etched is determined on the eaves layer, and the eaves layer and the conductive layer at the third area to be etched are etched to form a third pixel groove in the pixel groove; wherein the concentration of the etching solution for etching the conductive layer at the third area to be etched is a third etching concentration, and the etching reaction time is a third reaction time; the third etching concentration is less than the second etching concentration, and / or the third reaction time is less than the second reaction time.

5. A driving substrate prepared by the method for preparing a driving substrate according to any one of claims 1 to 4; characterized in that: The device comprises a driving layer, an anode metal layer, a pixel definition layer and an isolation structure which are stacked in sequence; the isolation structure surrounds a pixel groove; the isolation structure comprises a conductive part and an eaves structure which are stacked in sequence; the eaves structure extends the conductive part in a direction close to the pixel groove; and the width of the eaves structure is equal in the wall thickness direction of the isolation structure; Wherein, defined in the wall thickness direction of the isolation structure, the width of the eaves structure beyond the top of the conductive portion is the overhang width, and the width of the eaves structure beyond the bottom of the conductive portion is the extension width; The pixel grooves include a first pixel groove and a second pixel groove which are sequentially formed; In the isolation structure surrounding the first pixel groove, the overhang width is defined as a first overhang width, and the extension width is defined as a first extension width; In the isolation structure surrounding the second pixel groove, the overhang width is defined as a second overhang width, and the extension width is defined as a second extension width; The difference between the first overhang width and the second overhang width is a preset fixed value, and the fixed preset value is a positive number; A difference between the first extension width and the second extension width is the preset fixed value.

6. The driving substrate according to claim 5, characterized in that: The pixel groove also includes a third pixel groove, and the second pixel groove and the third pixel groove are formed in sequence; in the isolation structure surrounding the third pixel groove, the overhang width is defined as a third overhang width, and the extension width is defined as a third extension width; the difference between the second overhang width and the third overhang width is the preset fixed value; the difference between the second extension width and the third extension width is the preset fixed value.

7. The driving substrate according to claim 5, characterized in that: The preset fixed value is less than or equal to 3 micrometers.

8. The driving substrate according to claim 5, characterized in that: In a direction perpendicular to the pixel definition layer, the thickness of the eave structure is 0.1 micrometer to 0.3 micrometer, and the thickness of the conductive portion is 0.6 micrometer to 1.5 micrometer; The eaves structure is conductive, and a material of the eaves structure is different from a material of the conductive part; or the eaves structure is insulating.

9. The driving substrate according to claim 5, characterized in that: The anode metal layer includes a plurality of anodes arranged at intervals; the pixel grooves are arranged corresponding to the anodes and cover the areas corresponding to the anodes.

10. A method for preparing a display panel, characterized in that: include: Providing a driving substrate; The driving substrate is the driving substrate according to claim 5; Sub-pixels are formed by vapor deposition in a pixel groove, and a cathode of the sub-pixel is overlapped with a conductive portion; the sub-pixel includes a first sub-pixel and a second sub-pixel formed in sequence; the first sub-pixel is formed in a first pixel groove, and the second sub-pixel is formed in a second pixel groove.

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