Method for controlling single crystal orientation deflection angle to be projected to specific quadrant of blade
By measuring and marking the seed crystal orientation with small declination angles, the problem of declination angle control of blade orientation of single crystal high-temperature alloys is solved, and the precise projection of blade orientation is achieved to a specific quadrant, improving performance stability and mechanical performance consistency.
Patent Information
- Application Number
- CN202411130552.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-16
- Publication Date
- 2024-12-31
AI Technical Summary
The prior art is difficult to accurately control the orientation deflection angle of nickel-based single crystal high-temperature alloy blades, especially the problem of small deflection angles deflecting towards specific quadrants, making it difficult to meet the high-precision requirements of aircraft engines for blade orientation.
By preparing seed crystals with small declination angles, measuring their orientation using a single crystal diffractometer, calculating the declination angle data of the diffraction pattern, and performing specific markings on the surface of the seed crystal, and then determining its installation plan to achieve precise control of the blade orientation.
It realizes precise control of the orientation of single crystal blades, breaks through the technical bottleneck of small deflection angle fixed direction, and significantly improves the performance stability and mechanical performance consistency of the blades.
Smart Images
Figure CN119221089A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of single crystal high temperature alloys, and in particular to a method for controlling the projection of a single crystal orientation angle onto a specific quadrant of a blade. Background Art
[0002] Single crystal superalloys have excellent high temperature performance and are widely used in the hot end components of advanced engines. The anisotropy of single crystal material properties is a factor that must be considered in the design of single crystal turbines. Nickel-based single crystal superalloys are usually FCC structures with three crystal axis directions (
[100] -
[010] -
[001] ). The mechanical properties in these three crystal axis directions are the same, and the angle and direction of deviation from the crystal axis direction have a great impact on the mechanical properties of the alloy. At present, some aviation factories have proposed a smaller deviation angle for blade orientation and require the deviation angle to be biased towards a specific quadrant. The traditional crystal selection method for preparing blades obviously cannot meet this requirement. On the other hand, the small deviation angle of the seed crystal makes it difficult to accurately determine the direction of the actual crystal orientation through macroscopic pattern observation. Summary of the invention
[0003] The purpose of the present invention is to provide a method for controlling the projection of the single crystal orientation deviation angle onto a specific quadrant of a blade. This method can clarify the three-dimensional orientation of a seed crystal with a small deviation angle, and can customize different assembly schemes according to different quadrant deviation requirements. This method establishes a new direction for the precise control of the orientation of single crystal blades, realizes the technical requirements of "small deviation angle, fixed direction" for blades, and can significantly improve the performance stability of single crystal blades.
[0004] The technical solution of the present invention is:
[0005] A method for controlling the projection of a single crystal orientation angle onto a specific quadrant of a blade comprises the following steps:
[0006] Step 1: Prepare a seed crystal with a small deviation angle in both primary orientation and secondary orientation directions;
[0007] Step 2: Test the seed crystal orientation and obtain the diffraction pattern and results;
[0008] Step 3: Calculate the deflection angle data of the actual orientation diffraction pattern of the seed crystal projected on the screen through the formula;
[0009] Step 4: Make a unique indicative mark on a specific side of the seed crystal according to the calculated data;
[0010] Step 5: Assemble the seed crystal and casting wax pattern according to the marking instructions.
[0011] The method for controlling the projection of the single crystal orientation angle onto a specific quadrant of a blade comprises the following steps: (1) the seed crystal has a macroscopic shape of a cube, and the side length of the cube is 2 to 40 mm; (2) the deviation angle between the primary orientation of the seed crystal and the target orientation is small, within the range of 0° to 8°; and (3) the surface of the seed crystal is smooth and the verticality of adjacent planes is high, within the range of 0 to 0.2 mm.
[0012] The method for controlling the single crystal orientation angle projection to a specific quadrant of a blade, the second step of testing the seed crystal orientation comprises: (1) the testing equipment measures the crystallographic orientation of the bulk single crystal based on the X-ray reflection Laue method; (2) during the test, the seed crystal and the sample stage are axially aligned and the side planes are installed parallel.
[0013] In the method for controlling the projection of the single crystal orientation angle to a specific quadrant of the blade, the third step is to record the diffraction result data when calculating the projection angle of the seed crystal orientation, and calculate the μ value according to the formula to determine the phase relationship between the seed crystal orientation and the seed crystal macrostructure; the formula is: γ is the rotation angle about the
[100] crystal direction, and δ is the rotation angle about the
[010] crystal direction.
[0014] In the method for controlling the single crystal orientation angle projection to a specific quadrant of the blade, the fourth step is that the indicative mark is located on a certain side plane of the seed crystal, the mark itself has a unique spatial directionality, and uses "△", "↑", "∧" or "A", and the marking plane is the upper side surface when the seed crystal is rotated to the target projection area.
[0015] The method for controlling the projection of the single crystal orientation angle to a specific quadrant of the blade, in the fifth step, assembling the seed crystal and the casting wax mold, and establishing Cartesian left-hand coordinates for the seed crystal and the casting. When the seed crystal coordinates are established, the direction of the marked surface is y′+, and the direction in which the mark points is z′+. The seed crystal and the casting wax mold coordinates are installed coaxially.
[0016] The design idea of the present invention is:
[0017] The present invention adopts a single crystal diffractometer and a data calculation method to test and calculate the orientation bias of a small-angle seed crystal, and uses the calculated data to accurately determine the tilt direction of the seed crystal with a small deviation angle, and then determines the installation plan of the seed crystal and the casting to achieve the goal of the blade orientation projection falling on a certain point.
[0018] The present invention adopts a seed crystal preparation method for controlling secondary orientation and a seed crystal three-dimensional orientation detection technology, which can clearly define the phase relationship between the three-dimensional orientation and the macroscopic orientation of a seed crystal with a small deviation angle, and then control the deviation angle projection of the single crystal orientation to a specific quadrant of the blade through a specific installation scheme.
[0019] The advantages and beneficial effects of this method are:
[0020] 1. The present invention can determine the three-dimensional orientation of each seed crystal.
[0021] 2. The present invention provides clear data guidance for the orientation bias of small-angle seed crystals.
[0022] 3. The present invention is effective in controlling the blade orientation projection in any quadrant.
[0023] 4. The present invention can break through the technical bottleneck of "small deflection angle, fixed direction".
[0024] 5. The present invention controls the orientation consistency of the blades and stabilizes the mechanical properties of the blades and other castings. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 It is a flow chart of the present invention.
[0026] Figure 2 Schematic diagram of the seed crystal used in the present invention to control the primary and secondary orientations.
[0027] Figure 3 This is a schematic diagram of the principle of the calculation formula adopted by the present invention.
[0028] Figure 4 The Laue technique is used to measure the small-angle single crystal diffraction spot.
[0029] Figure 5 This is a schematic diagram of the installation coordinate relationship between the seed crystal and the casting wax mold.
[0030] Figure 6 The casting coordinates and target area of Example 1.
[0031] Figure 7 Schematic diagram of the relationship between the seed crystal orientation and the macroscopic structure phase of Example 1.
[0032] Figure 8 The casting coordinates and target area of Example 2.
[0033] Fig. 9 Schematic diagram of the relationship between seed crystal orientation and macroscopic structure phase in Example 2.
[0034] Fig.10 These are the casting coordinates and target area of Example 3.
[0035] Fig.11 Schematic diagram of the relationship between seed crystal orientation and macroscopic structure phase in Example 3.
[0036] In the figure, 1, seed crystal, 2, dendrite, 3, mark, 4, screen, 5, sample, 6, casting wax model. DETAILED DESCRIPTION
[0037] In the specific implementation process, Figure 1 As shown, the present invention provides a method for controlling the projection of a single crystal orientation angle to a specific quadrant of a blade, and the specific steps are as follows:
[0038] In the first step, a seed crystal is prepared in which both the primary orientation and the secondary orientation are controlled with only a small deviation angle, and the seed crystal has a cubic structure.
[0039] The single crystal bar is macro-etched, and the directions approximately
[001] and
[010] are marked according to the corrosion patterns on the end and side faces, and the cubic seed crystal blank is cut along the marked directions during the wire cutting.
[0040] The six sides of the cut seed crystal are polished and cleaned on a flat grinder.
[0041] In the second step, the seed crystal is installed on the single crystal diffractometer test bench, and one end face of the seed crystal is selected as the test plane. The plane is perpendicular to the normal direction of the single crystal diffractometer X-ray transmitter and the receiving screen, and the side plane of the seed crystal coincides with the test bench.
[0042] The third step is to test the seed crystal orientation data based on the X-ray reflection Laue method and run a single crystal diffractometer to obtain the three-dimensional orientation information of the seed crystal in its current placement state. Figure 4 As shown in the figure, the test results of the single crystal diffractometer are the comparison between the sample diffraction pattern and the standard diffraction pattern, as well as the values of the four Laue angles Gamma, Delta, Alpha, and Beta. When the test angle is very small with respect to the main crystal axis, it is difficult to intuitively judge from the figure whether the seed crystal orientation projection falls in the target area. Therefore, it is a more accurate method to calculate the projection tendency through the numerical calculation of the Laue angle.
[0043] The definition of the Laue angle of the single crystal diffraction system in the measurement method of the present invention adopts the US1 convention. In the coordinate system established by Descartes' left-hand rule, Gamma (γ) is the rotation angle with the
[100] crystal direction as the rotation axis, Delta (δ) is the rotation angle with the
[010] crystal direction as the rotation axis, Alpha (α) is the angle between the
[001] crystal direction and the reference direction RD, and Beta (β) is the angle between the crystal band curve in the test system screen and the reference plane RP after clockwise rotation around the
[001] rotation axis. Figure 3 As shown, the angle between the line segment connecting the central diffraction spot of sample 5 on screen 4 and the central diffraction spot in the standard
[001] direction and the y+ coordinate axis of the screen is represented by μ, and the μ angle reflects the angular inclination of the test crystal direction on the projection plane. The above related Laue angle has the following calculation relationship:
[0044] Formula 1: cosα=cosγcosδ
[0045] Formula 2:
[0046] The fourth step is to calculate the deflection angle μ value according to the above formula and the collected relevant Laue angle values to determine the macroscopic orientation of the sample.
[0047] The fifth step is to rotate the seed crystal by 90° so that its orientation projection falls on the target area, mark the seed crystal orientation, and make a mark 3 on the specific side plane of the seed crystal 1. The mark 3 should have a unique guide for orientation installation ( Figure 2 ). To clearly show that the orientation of the dendrite 2 is at a certain angle to the macroscopic structure of the seed crystal 1, Figure 2 The angle of the middle dendrite is magnified to 10° for expression.
[0048] Step 6: Figure 5 As shown, the seed crystal 1 and the casting wax mold 6 are coaxially assembled according to the required scheme to control the deflection angle and direction of the casting orientation.
[0049] The present invention is further described in detail below with reference to the accompanying drawings and embodiments.
[0050] Example 1
[0051] like Figure 6 As shown, this embodiment is an embodiment of preparing a small deflection angle seed crystal with an axial orientation close to
[001] by the method of the present invention and controlling its deflection angle projection to fall in the first quadrant of the casting coordinate. The specific process is:
[0052] Step 1, preparing a seed crystal blank with an axial orientation of
[001] and a secondary orientation of
[010] . The seed crystal has a cubic structure and a cubic size of 8×7×25 mm.
[0053] Step 2, grinding away the rough wire cutting lines on the surface of the seed crystal blank to make the surface of the seed crystal smooth and clean, while ensuring that the verticality of adjacent planes of the seed crystal macrostructure is high, and the verticality is ≤0.08mm.
[0054] Step 3, fix the seed crystal on the single crystal diffractometer fixture, ensure that one side of the seed crystal is close to the fixture surface, the side is parallel to the side of the fixture, and the test plane is perpendicular to the normal line connecting the single crystal diffractometer ray transmitter and the receiving screen in the opposite direction.
[0055] Step 4. Click the Run button to test the orientation of the seed crystal. The diffraction results are: gamma: 1.2, delta: 0.9, alpha: 1.4.
[0056] Step 5, calculate the information of the diffraction results to obtain the μ value:
[0057]
[0058] This indicates that the projection of the diffraction spot on the end face of the seed crystal falls in the direction of y+36.9° clockwise, and the specific deviation angle is α (1.4°).
[0059] Step 6: Mark the top surface of the seed crystal at the current placement position with a unique direction indicator. In this embodiment, the mark is "△", and the top angle of the triangle points to the test end face ( Figure 2 ).like Figure 7 As shown in the above marking method, the phase relationship between the seed crystal orientation and its macrostructure is given by Figure 7 It can be seen that the seed crystal is marked with a "△" on the plane pointing to y'+, there is a certain deviation angle between the dendrite orientation and the macroscopic structure of the seed crystal, and the dendrite orientation in the seed crystal is projected to the x'+, y'+ region (first quadrant) toward the z'+ pointing plane.
[0060] Step 7, assemble the seed crystal and the casting wax mold, and establish Cartesian left-hand coordinates for the seed crystal and the casting. Figure 5 As shown, during assembly, the plane where the marked triangle is located faces the seed crystal coordinate y′+, and the vertex angle of the marked triangle points to the seed crystal coordinate z′+ direction. The seed crystal coordinates coincide with the casting coordinates for assembly.
[0061] Example 2
[0062] like Figure 8 As shown, this embodiment is an embodiment of preparing a small deflection angle seed crystal with an axial orientation close to
[001] by the method of the present invention and controlling its deflection angle projection to fall in the second quadrant of the casting coordinate. The specific process is:
[0063] Step 1, preparing a seed crystal blank with an axial direction of
[001] and a secondary orientation of
[010] . The seed crystal has a cubic structure and a cubic size of 4×6×20 mm.
[0064] Step 2, grinding away the rough wire cutting lines on the surface of the seed crystal blank to make the surface of the seed crystal smooth and clean, while ensuring that the verticality of the adjacent planes of the seed crystal is high, the verticality is ≤0.06mm.
[0065] Step 3, fix the seed crystal on the single crystal diffractometer fixture, ensure that one side of the seed crystal is close to the fixture surface, the side is parallel to the side of the fixture, and the test plane is perpendicular to the normal line connecting the single crystal diffractometer ray transmitter and the receiving screen in the opposite direction.
[0066] Step 4. Click the Run button to test the orientation of the seed crystal. The diffraction results are: gamma: 0.9, delta 1.0, alpha: 1.3.
[0067] Step 5, calculate the information of the diffraction results to obtain the μ value:
[0068]
[0069] This indicates that the diffraction spot projection of the seed crystal end face falls in the direction of y+42° clockwise, and the specific deviation angle is α (1.3°).
[0070] Step 6: Rotate the seed crystal in the current position (facing the test surface) clockwise by 90°. In this position, mark the top surface of the seed crystal with a unique direction indication ( Figure 2 ), in this embodiment, the triangle vertex marked as "△" points to the test end surface. Fig. 9 As shown in the above marking method, the phase relationship between the seed crystal orientation and its macrostructure is given by Fig. 9 It can be seen that the seed crystal is marked with a "△" on the plane pointing to y'+, there is a certain deviation angle between the dendrite orientation and the macroscopic structure of the seed crystal, and the dendrite orientation in the seed crystal is projected to the x'-, y'+ region (the second quadrant) toward the plane pointing to z'+.
[0071] Step 7, assemble the seed crystal and the casting wax mold, and establish Cartesian left-hand coordinates for the seed crystal and the casting. Figure 5 As shown, during assembly, the plane where the marked triangle is located faces the seed crystal coordinate y′+, and the vertex angle of the marked triangle points to the seed crystal coordinate z′+ direction. The seed crystal coordinates coincide with the casting coordinates for assembly.
[0072] Example 3
[0073] like Fig.10 As shown, this embodiment is an embodiment of preparing a small-angle seed crystal with an axial orientation close to
[001] by the method of the present invention and controlling its angle projection to fall within the casting coordinate (with y+ axis as 0°, counterclockwise as negative, and clockwise as positive) within the range of -20° to 70°, and the specific process is:
[0074] Step 1, preparing a seed crystal blank with an axial orientation of
[001] and a secondary orientation of
[010] . The seed crystal has a cubic structure and a cubic size of 15×12×30 mm.
[0075] Step 2, grinding away the rough wire cutting lines on the surface of the seed crystal blank to make the surface of the seed crystal smooth and clean, while ensuring that the verticality of the adjacent planes of the seed crystal is high, the verticality is ≤0.1mm.
[0076] Step 3, fix the seed crystal on the single crystal diffractometer fixture, ensure that one side of the seed crystal is close to the fixture surface, the side is parallel to the side of the fixture, and the test plane is perpendicular to the normal line connecting the single crystal diffractometer ray transmitter and the receiving screen in the opposite direction.
[0077] Step 4. Click the Run button to test the orientation of the seed crystal. The diffraction results are: gamma: 2.0, delta: -0.9, alpha: -2.2.
[0078] Step 5, calculate the information of the diffraction results to obtain the μ value:
[0079]
[0080] This indicates that the diffraction spot projection of the seed crystal end face falls in the direction of y+24.2° counterclockwise, and the specific deviation angle is α (2.2°).
[0081] Step 6: Rotate the seed crystal in the current position (facing the test surface) counterclockwise by 90°. In this position, mark the top surface of the seed crystal with a unique direction indicator ( Figure 2 ), in this embodiment, the triangle vertex marked as "△" points to the test end surface. Fig.11 As shown in the above marking method, the phase relationship between the seed crystal orientation and its macrostructure is given by Fig.11 It can be seen that the seed crystal is marked with a "△" on the plane pointing to y'+, there is a certain deviation angle between the dendrite orientation and the macroscopic structure of the seed crystal, and the projection of the dendrite orientation in the seed crystal to the z'+ pointing plane is in the range of -20° to 70° (with y+ axis as 0°, counterclockwise as negative, and clockwise as positive).
[0082] Step 7, assemble the seed crystal and the casting wax mold, and establish Cartesian left-hand coordinates for the seed crystal and the casting. Figure 5 As shown, during assembly, the plane where the marked triangle is located faces the seed crystal coordinate y′+, and the vertex angle of the marked triangle points to the seed crystal coordinate z′+ direction. The seed crystal coordinates coincide with the casting coordinates for assembly.
[0083] The implementation results show that the method of the present invention can clarify the projection direction of small deviation angles through a single crystal diffractometer and formula calculation, filling the technical gap in controlling the orientation of small deviation angles to a specific quadrant, and is of great significance to the performance control of single crystal alloy blades.
Claims
1. A method for controlling the projection of a single crystal orientation angle onto a specific quadrant of a blade, characterized in that: The following steps are involved: Step 1: Prepare a seed crystal with a small deviation angle in both primary orientation and secondary orientation directions; Step 2: Test the seed crystal orientation and obtain the diffraction pattern and results; Step 3: Calculate the deflection angle data of the actual orientation diffraction pattern of the seed crystal projected on the screen through the formula; Step 4: Make a unique indicative mark on a specific side of the seed crystal according to the calculated data; Step 5: Assemble the seed crystal and casting wax pattern according to the marking instructions.
2. The method for controlling the projection of the single crystal orientation angle to a specific quadrant of a blade according to claim 1, characterized in that: The first step is to prepare a small-angle seed crystal for controlling the primary orientation and the secondary orientation, including: (1) the macroscopic shape of the seed crystal is a cube, and the side length of the cube is 2 to 40 mm; (2) the deviation angle between the primary orientation of the seed crystal and the target orientation is small, within the range of 0° to 8°; (3) the surface of the seed crystal is smooth and the verticality of adjacent planes is high, within the range of 0 to 0.2 mm.
3. The method for controlling the projection of the single crystal orientation angle to a specific quadrant of a blade according to claim 1, characterized in that: The second step of testing the seed crystal orientation includes: (1) the testing equipment measures the crystallographic orientation of the bulk single crystal based on the X-ray reflection Laue method; (2) during the test, the seed crystal is axially aligned with the sample stage and the side planes are installed parallel.
4. The method for controlling the projection of the single crystal orientation angle to a specific quadrant of a blade according to claim 1, characterized in that: The third step is to record the diffraction result data when calculating the projection deflection angle of the seed crystal orientation, and calculate the μ value according to the formula to determine the phase relationship between the seed crystal orientation and the seed crystal macrostructure; the formula is: γ is the rotation angle about the [100] crystal direction, and δ is the rotation angle about the [010] crystal direction.
5. The method for controlling the projection of the single crystal orientation angle onto a specific quadrant of a blade according to claim 1, characterized in that: The fourth step is to place the indicative mark on a certain side plane of the seed crystal. The mark itself has a unique spatial directionality and uses "△", "↑", "∧" or "A". The marking plane is the upper side of the seed crystal when it is rotated to the target projection area.
6. The method for controlling the projection of the single crystal orientation angle onto a specific quadrant of a blade according to claim 1, characterized in that: The fifth step is to assemble the seed crystal and the casting wax mold, and at the same time establish Cartesian left-hand coordinates for the seed crystal and the casting. When the seed crystal coordinates are established, the direction of the marked surface is y′+, and the direction of the marked surface is z′+. The seed crystal and the casting wax mold coordinates are installed coaxially.