Touch panel

Abstract

One embodiment of the present invention provides a thin touch panel. Alternatively, a touch panel having a simplified structure is provided. Alternatively, a touch panel easy to assemble into an electronic device is provided. Alternatively, a touch panel having a small number of components is provided. The touch panel includes pixel electrodes arranged in a matrix, a plurality of signal lines, and a plurality of scan lines. Further, a plurality of first wirings extending in a direction parallel to the signal lines and a plurality of second wirings extending in a direction parallel to the scan lines are included. Part of the first wiring and part of the second wiring are used as a pair of electrodes constituting the touch sensor. In addition, the first wiring and the second wiring have a stripe shape or a mesh shape, and are arranged between two adjacent pixel electrodes in a plane.

Description

This application is a divisional application of a patent application with application number 201680030074.7, application date May 19, 2016, and invention name “Touch Panel”. Technical Field

[0001] One embodiment of the present invention relates to an input device. One embodiment of the present invention relates to a display device. One embodiment of the present invention relates to an input / output device. One embodiment of the present invention relates to a touch panel.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. As an example of the technical field of one embodiment of the present invention disclosed in this specification, etc., a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, an electronic device, a lighting device, an input device, an input / output device, a driving method thereof, or a manufacturing method thereof can be cited.

[0003] Note that in this specification, etc., semiconductor devices refer to all devices that can work by utilizing semiconductor characteristics. In addition to semiconductor elements such as transistors, semiconductor circuits, computing devices, or storage devices are also a form of semiconductor devices. Camera devices, display devices, liquid crystal display devices, light-emitting devices, input devices, input / output devices, electro-optical devices, power generation devices (including thin-film solar cells or organic thin-film solar cells, etc.) and electronic devices sometimes include semiconductor devices. Background Art

[0004] In recent years, display devices equipped with touch sensors as position input units have been put into practical use. Display devices equipped with touch sensors are called touch panels or touch screens, for example. For example, portable information terminals equipped with touch panels include smartphones and tablet terminals.

[0005] As one of the display devices, there is a liquid crystal display device including a liquid crystal element. For example, an active matrix type liquid crystal display device in which pixel electrodes are arranged in a matrix and transistors are used as switching elements connected to the pixel electrodes has attracted attention.

[0006] For example, an active matrix liquid crystal display device is known in which a transistor using a metal oxide in a channel formation region is used as a switching element connected to each pixel electrode (Patent Documents 1 and 2).

[0007] As liquid crystal display devices, there are known two types, roughly classified into a transmissive liquid crystal display device and a reflective liquid crystal display device.

[0008] A transmissive liquid crystal display device uses a backlight such as a cold cathode fluorescent lamp and an LED, and utilizes the optical modulation effect of liquid crystal to select a state in which the light from the backlight is transmitted through the liquid crystal and output to the outside of the liquid crystal display device or a state in which the light is not output to the outside, thereby performing a bright or dark display, and an image is displayed by combining the bright and dark displays.

[0009] In addition, the reflective liquid crystal display device uses the optical modulation effect of liquid crystal to select the state in which external light, i.e., incident light, is reflected by the pixel electrode and output to the outside of the device and the state in which the incident light is not output to the outside of the device, to perform light and dark display, and displays images by combining the light and dark displays.

[0010] As other display devices, there are light-emitting devices including light-emitting elements such as organic EL (Electro Luminescence) elements and light-emitting diodes (LEDs), and electronic paper that performs display by electrophoresis or the like.

[0011] Patent Document 3 discloses a flexible light-emitting device using an organic EL element.

[0012] [Patent Document 1] Japanese Patent Application Publication No. 2007-123861 [Patent Document 2] Japanese Patent Application Publication No. 2007-96055 [Patent Document 3] Japanese Patent Application Publication No. 2014-197522 Summary of the invention

[0013] There is a great demand for touch panels that provide a display panel with a function of providing input by touching the screen with a finger or a stylus pen as a user interface.

[0014] Furthermore, electronic devices using touch panels are required to be thinner and lighter, and therefore, the touch panels themselves are required to be thinner and lighter.

[0015] For example, as a touch panel structure, a substrate including a touch sensor may be bonded to the display surface side of a display panel. However, this structure has problems such as the thickness of the touch panel cannot be reduced and the number of components is large.

[0016] One of the purposes of one embodiment of the present invention is to provide a thin touch panel. One of the purposes of another embodiment of the present invention is to provide a touch panel with a simplified structure. One of the purposes of another embodiment of the present invention is to provide a touch panel that is easy to assemble into an electronic device. One of the purposes of another embodiment of the present invention is to provide a touch panel with a small number of components. One of the purposes of another embodiment of the present invention is to provide a lightweight touch panel. One of the purposes of another embodiment of the present invention is to provide a touch panel with high sensing sensitivity.

[0017] One of the purposes of another embodiment of the present invention is to provide a novel input device, output device, input / output device, etc. Note that the recording of these purposes does not prevent the existence of other purposes. In addition, one embodiment of the present invention does not need to achieve all of the above purposes. In addition, purposes other than the above can be extracted from the description of the specification, drawings, claims, etc.

[0018] One embodiment of the present invention is a touch panel, which includes a display unit, a signal line, a scan line, a first wiring, and a second wiring. The display unit includes a plurality of pixel electrodes. The plurality of pixel electrodes are arranged in a matrix along a first direction and a second direction intersecting the first direction. The signal line extends in a first direction. The scan line extends in a second direction. The first wiring extends in the first direction. The second wiring extends in the second direction. The first wiring has a first portion parallel to the signal line, and the first portion is located between two pixel electrodes adjacent to each other in the second direction in a plane. The second wiring has a second portion parallel to the scan line, and the second portion is located between two pixel electrodes adjacent to each other in the first direction in a plane.

[0019] In the above structure, preferably, the first wiring does not cross the signal line in the portion overlapping with the display unit, and the second wiring does not cross the scan line in the portion overlapping with the display unit. In this case, preferably, the signal line and the first wiring are formed by processing the same conductive film, and the scan line and the second wiring are formed by processing the same conductive film.

[0020] In addition, it is preferred that the first wiring is formed by processing the same conductive film as the signal line, and the second wiring has a third portion formed by processing the same conductive film as the signal line and a fourth portion formed by processing the same conductive film as the scan line. In this case, the fourth portion preferably crosses the signal line or the first wiring.

[0021] In addition, it is preferred that the second wiring is formed by processing the same conductive film as the scanning line, and the first wiring has a fifth portion formed by processing the same conductive film as the signal line and a sixth portion formed by processing the same conductive film as the scanning line. In this case, the fifth portion preferably intersects the scanning line or the second wiring.

[0022] In addition, the first wiring preferably has a seventh portion parallel to the scan line and intersecting the signal line. In this case, the seventh portion is preferably located between two pixel electrodes adjacent to each other in the first direction. In addition, the second wiring preferably has an eighth portion parallel to the signal line and intersecting the scan line. The eighth portion is preferably located between two pixel electrodes adjacent to each other in the second direction.

[0023] In this case, the first wiring preferably has a mesh shape surrounding one or more pixel electrodes in a plane. In addition, the second wiring preferably has a mesh shape surrounding another one or more pixel electrodes in a plane.

[0024] In the above structure, the first portion of the first wiring, the eighth portion of the second wiring and the signal line are preferably formed by processing the same conductive film. In addition, the seventh portion of the first wiring, the second portion of the second wiring and the scan line are preferably formed by processing the same conductive film.

[0025] In the above structure, one of the first wiring and the second wiring is preferably formed by processing the same conductive film as the scan line or the signal line. In addition, the other of the first wiring and the second wiring is preferably formed by processing a conductive film different from the scan line and the signal line. In this case, the other of the first wiring and the second wiring is preferably formed by processing the same conductive film as the pixel electrode.

[0026] In the above structure, the first wiring is preferably formed by processing a conductive film different from the scanning line and the signal line. In addition, the second wiring is preferably formed by processing a conductive film different from the scanning line and the signal line. In this case, the first wiring and / or the second wiring is preferably formed by processing the same conductive film as the pixel electrode.

[0027] In the above structure, the touch panel preferably includes a liquid crystal element including a pixel electrode, a liquid crystal, and a common electrode.

[0028] At this time, the touch panel preferably includes a first substrate, a second substrate, a first polarizer, a second polarizer and a backlight. In addition, it is preferred to stack them in the order of backlight, first polarizer, first substrate, second substrate and second polarizer. At this time, the signal line, the scan line, the first wiring, the second wiring and the pixel electrode are preferably arranged on the second substrate side on the first substrate.

[0029] In the above structure, the touch panel preferably includes a light-emitting element including a pixel electrode, an EL layer, and a common electrode.

[0030] At this time, the touch panel preferably includes a first substrate, a second substrate and a polarizer. In addition, the polarizer, the first substrate and the second substrate are preferably stacked in this order. At this time, the signal line, the scan line, the first wiring, the second wiring and the pixel electrode are preferably arranged on the second substrate side on the first substrate.

[0031] Note that in this specification, etc., a display panel refers to a panel that can display (output) an image, etc. on a display surface. Therefore, a display panel is one form of an output device.

[0032] In addition, in this specification, etc., a structure in which a connector such as an FPC (Flexible print circuit) or TCP (Tape Carrier Package) is installed on a display panel substrate, or a structure in which an IC (integrated circuit) is directly installed on a substrate in a COG (Chip On Glass) manner is sometimes referred to as a display panel module or display module, or simply as a display panel, etc.

[0033] In addition, in this specification, etc., a touch sensor refers to a sensor that can sense contact or proximity of a sensing object such as a finger or a stylus pen. Therefore, a touch sensor is one form of an output device.

[0034] In addition, in this specification, etc., a substrate including a touch sensor is sometimes referred to as a touch sensor panel, or simply as a touch sensor, etc. In addition, in this specification, etc., a structure in which a connector such as an FPC or TCP is mounted on a substrate of a touch sensor panel, or a structure in which an IC (integrated circuit) is mounted on a substrate in a COG manner is sometimes referred to as a touch sensor panel module, a touch sensor module, a sensor module, or simply as a touch sensor, etc.

[0035] Note that in this specification, etc., a touch panel has the following functions: a function of displaying (outputting) an image on a display surface; and a function of serving as a touch sensor that senses when a sensed object such as a finger or a stylus pen contacts or approaches the display surface. Therefore, a touch panel is one form of an input / output device.

[0036] The touch panel may also be referred to as a display panel (or display device) having a touch sensor or a display panel (or display device) having a touch sensor function, for example.

[0037] The touch panel may include a display panel and a touch sensor panel. Alternatively, the display panel may have a touch sensor function inside.

[0038] In addition, in this specification, etc., a structure in which a connector such as an FPC or TCP is installed on a touch panel substrate, or a structure in which an IC (integrated circuit) is installed on a substrate in a COG manner is sometimes referred to as a touch panel module, a display module, or simply a touch panel.

[0039] According to one embodiment of the present invention, a thin touch panel can be provided. Alternatively, a touch panel with a simplified structure can be provided. Alternatively, a touch panel that is easy to assemble into an electronic device can be provided. Alternatively, a touch panel with a small number of components can be provided. Alternatively, a lightweight touch panel can be provided.

[0040] Note that one embodiment of the present invention does not necessarily have all of the above-mentioned effects. Furthermore, effects other than the above-mentioned effects can be extracted from the description of the specification, drawings, claims, and the like. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1A and Figure 1B is a structural example of a touch panel module according to an embodiment; FIG. 2A to FIG. 2C is a structural example of a touch panel module according to an embodiment; FIG. 3A to FIG. 3C is a structural example of a touch panel module according to an embodiment; FIG. 4A to FIG. 4C is a structural example of a touch panel module according to an embodiment; FIG. 5A to FIG. 5C is a structural example of a touch panel module according to an embodiment; Fig. 6A and Figure 6B is a structural example of wiring of an embodiment; Fig. 7A and Figure 7B is a structural example of wiring in an embodiment; Figure 8 is a structural example of a touch panel module according to an embodiment; Fig. 9A and Fig. 9B is a structural example of a touch panel module according to an embodiment; Fig. 10A and Fig. 10B is a structural example of a touch panel module according to an embodiment; Fig.11A and Fig. 11B is a structural example of a touch panel module according to an embodiment; Fig. 12A and Fig. 12B is a structural example of a touch panel module according to an embodiment; Fig.13is a structural example of a touch panel module according to an embodiment; Fig.14A and Fig. 14B is a structural example of a touch panel module according to an embodiment; Fig.15A and Fig. 15B is a structural example of a touch panel module according to an embodiment; Fig.16 is a structural example of a touch panel module according to an embodiment; Fig.17 is a structural example of a touch panel module according to an embodiment; Fig.18A and Fig.18B is a structural example of a pixel according to an embodiment; Fig.19 is a structural example of a pixel according to an embodiment; Fig. 20 is a structural example of a pixel according to an embodiment; Fig.21 is a structural example of a touch panel module according to an embodiment; Fig.22A and Fig. 22B is a structural example of a touch panel module according to an embodiment; Fig.23 is a structural example of a touch panel module according to an embodiment; Fig.24A and Fig. 24B is a structural example of a touch panel module according to an embodiment; Fig.25A and Fig.25B is a structural example of a touch panel module according to an embodiment; Fig.26 is a structural example of a touch panel module according to an embodiment; Fig.27A and Fig.27B is a structural example of a touch panel module according to an embodiment; Fig.28A and Fig.28B is a structural example of a touch panel module according to an embodiment; Fig.29 is a configuration example of a circuit of an embodiment; Fig.30 is a configuration example of a circuit of an embodiment; Fig.31 is a structural example of a touch panel module according to an embodiment; Fig.32 is a structural example of a touch panel module according to an embodiment; Fig.33 is a structural example of a touch panel module according to an embodiment; Fig.34 is a structural example of a touch panel module according to an embodiment; Fig.35 is a structural example of a touch panel module according to an embodiment; Fig.36 is a structural example of a touch panel module according to an embodiment; Fig.37 is a structural example of a touch panel module according to an embodiment; Fig.38 is a structural example of a touch panel module according to an embodiment; Fig.39 is a structural example of a touch panel module according to an embodiment; Fig.40 is a structural example of a touch panel module according to an embodiment; Fig.41 is a structural example of a touch panel module according to an embodiment; Fig.42 is a structural example of a touch panel module according to an embodiment; Fig.43A and Fig.43B is a circuit diagram and a timing diagram of a touch sensor according to an embodiment; Figure 44A1 , Figure 44A2 , Figure 44B1 , Figure 44B2 , Fig.44C1 and Fig.44C2 is a cross-sectional view illustrating one aspect of a transistor; Figure 45A1 , Figure 45A2 , Figure 45A3 , Fig.45B1 and Figure 45B2 is a cross-sectional view illustrating one aspect of a transistor; Figure 46A1 , Figure 46A2 , Figure 46A3 , Figure 46B1 , Figure 46B2 , Fig.46C1 and Fig.46C2 is a cross-sectional view illustrating one aspect of a transistor; Fig.47 is a block diagram of a touch panel module according to an embodiment; FIG. 48A to FIG. 48C is a structural example of a touch panel module according to an embodiment; Fig.49 is a diagram illustrating a display module according to an embodiment; FIG. 50A to FIG. 50H is a diagram illustrating an electronic device according to an embodiment; Fig.51A and Fig.51Bis a diagram illustrating an electronic device according to an embodiment; Fig.52A , Fig.52B , Fig.52C1 , Fig.52C2 , Fig.52D , Fig.52E , Fig.52F , Figure 52G and Fig.52H is a diagram illustrating an electronic device according to an embodiment; Figure 53A1 , Figure 53A2 , Fig.53B , Fig.53C , Fig.53D , Fig.53E , Fig.53F , Figure 53G , Fig.53H and Fig.53I is a diagram illustrating an electronic device according to an embodiment; FIG. 54A to FIG. 54E is a diagram illustrating an electronic device according to an embodiment; Fig.55 is a diagram illustrating the measurement results of the XRD spectrum of the sample; Fig.56A and Fig.56B is the TEM image of the sample, FIG. 56C to FIG. 56L is its electron diffraction pattern; FIG. 57A to FIG. 57C It is a figure explaining the EDX surface analysis image of a sample. DETAILED DESCRIPTION

[0042] The embodiments are described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and a person skilled in the art can easily understand that the method and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below.

[0043] Note that in the invention structure described below, the same reference numerals are used in common in different drawings to represent the same parts or parts with the same function, and repeated description is omitted. In addition, when representing parts with the same function, the same hatching is sometimes used without adding a reference numeral.

[0044] Note that in each of the drawings described in this specification, the size of each component, the thickness of a layer, and a region may be exaggerated for the sake of clarity. Therefore, the present invention is not limited to the sizes in the drawings.

[0045] The ordinal numbers such as “first” and “second” used in the present specification and the like are provided to avoid confusion among constituent elements and are not intended to limit the number of constituent elements.

[0046] Implementation Method 1 In this embodiment, a configuration example of a touch panel according to one embodiment of the present invention is described. In the following, an example in which a capacitive touch sensor is used as a touch panel according to one embodiment of the present invention is described.

[0047] As capacitive touch sensors, there are surface capacitive touch sensors, projected capacitive touch sensors, etc. As projected capacitive touch sensors, there are self-capacitive touch sensors, mutual capacitive touch sensors, etc. When using mutual capacitive touch sensors, multi-point detection can be performed simultaneously, so it is preferred.

[0048] A touch sensor that can be used in a touch panel according to one embodiment of the present invention includes a pair of conductive layers. Capacitive coupling is generated between the pair of conductive layers. Sensing can be performed by utilizing a phenomenon in which the capacitance value between the pair of conductive layers changes when a sensing object contacts or approaches the pair of conductive layers.

[0049] A touch panel of one embodiment of the present invention includes pixels, a plurality of signal lines, and a plurality of scan lines arranged in a matrix. The pixels include pixel electrodes. The signal lines and the scan lines extend in directions that intersect each other. Here, the extending direction of the signal lines is referred to as a first direction or an X direction, and the extending direction of the scan lines is referred to as a second direction or a Y direction. The first direction and the second direction only need to intersect each other, but are preferably orthogonal to each other.

[0050] In addition, a touch panel of one embodiment of the present invention includes a plurality of first wirings extending in a first direction and a plurality of second wirings extending in a second direction. A portion of the first wirings and the second wirings are used as a pair of electrodes constituting a touch sensor. That is, capacitive coupling is generated between the first wirings and the second wirings.

[0051] In this specification, "a layer, wiring, or other structure, etc. extends in a certain direction" means that the layer, wiring, or other structure, etc. is arranged so as to extend in the direction. The layer, wiring, or other structure, etc. may have a shape extending in the direction when viewed from above, and the layer, wiring, or other structure, etc. may include a portion extending in a direction different from the direction.

[0052] In addition, the first wiring and the second wiring may be arranged between two adjacent pixel electrodes in a plane. In this case, a part of the first wiring and the second wiring may also include a portion overlapping with the pixel electrode.

[0053] At this time, because the pair of wirings constituting the touch sensor are arranged in a way that avoids the optical path of the light from the display element, the effect of not generating moiré in principle is achieved. Here, "moiré" refers to interference fringes generated when two or more periodic patterns are overlapped. Therefore, a touch panel with extremely high display quality can be realized.

[0054] In addition, it is preferable to provide a light shielding layer or a circular polarizing plate at a position closer to the display surface than the pair of wirings constituting the touch sensor, thereby suppressing or preventing the pair of wirings from reflecting external light, thereby preventing the pair of wirings from being seen by the user.

[0055] As an example of the first wiring and the second wiring, they may each have a structure that extends in a stripe shape in the first direction or the second direction. In this case, several of the plurality of first wirings may be electrically connected in an area outside the display unit that displays an image, and form a group. Similarly, several of the plurality of second wirings may also be electrically connected in an area outside the display unit, and form a group. By adopting this structure, the area of ​​the first wiring and the second wiring that contributes to detection can be increased, thereby improving the detection sensitivity.

[0056] As another example of the first wiring and the second wiring, they may be mesh-shaped with portions parallel to the first direction and the second direction, respectively. In this case, a structure may be adopted in which one or more pixel electrodes are included in the opening of the mesh in the plane. By setting the first wiring and the second wiring in a mesh shape, their conductivity in the extension direction can be improved, thereby suppressing signal delay and improving detection sensitivity.

[0057] Here, it is preferred that the first wiring, the second wiring, and the wiring, electrodes, semiconductors, etc. constituting the pixels, display elements, and drive circuits of the touch panel are formed by processing the same film. Thus, the touch panel can be manufactured without adding a special process for imparting the function of the touch sensor, thereby reducing the manufacturing cost.

[0058] Typically, for example, when the first wiring and the second wiring are arranged in a stripe shape as described above, the first wiring and the signal line can be formed by processing the same conductive film, and the second wiring and the scan line can be formed by processing the same conductive film. Thus, the first wiring and the second wiring can be formed on different insulating layers, so that the first wiring and the second wiring can be crossed without using a special method. In addition, at this time, since the first wiring and the scan line are formed on different insulating layers, and the second wiring and the signal line are formed on different insulating layers, the first wiring and the scan line or the second wiring and the signal line can be crossed without using a special method.

[0059] In addition, for example, when the first wiring and the second wiring are arranged in a mesh shape as described above, their portions parallel to the first direction are formed by processing the same conductive film as the signal line, and their portions parallel to the second direction are formed by processing the same conductive film as the scan line, and these two portions are made conductive, thereby forming a mesh shape. Thus, any two of the first wiring, the second wiring, the signal line, and the scan line can be crossed without using a special method.

[0060] Note that the structures of the first wiring and the second wiring are not limited to this, and other examples will be described later.

[0061] In the case where the first wiring and the second wiring are formed by processing the same film as the wiring, electrode, semiconductor layer, etc. that constitutes the pixels, display elements, driving circuits, etc. of the touch panel, when one side of the substrate (also referred to as the first substrate, element substrate) on which the first wiring and the second wiring are formed is the touch surface, the distance between the first wiring and the second wiring and the touch surface can be made small, thereby achieving higher sensitivity, so it is preferred. At this time, the first substrate side of the touch panel is the display surface. For example, in the case of using a transmissive liquid crystal display device as a display element, the following structure can be realized: a polarizer and a backlight are arranged on the outside of a substrate (also referred to as a second substrate, opposing substrate) that is opposite to the first substrate and seals the liquid crystal, and a polarizer is arranged on the outside of the first substrate. For example, a bottom-emitting (bottom-emitting) type light-emitting element can be used as a display element.

[0062] Hereinafter, a specific configuration example of one embodiment of the present invention will be described with reference to the drawings.

[0063] [Structure example] Figure 1A 1 is a schematic perspective view of a touch panel module 10 according to one embodiment of the present invention. The touch panel module 10 has a structure in which a substrate 21 and a substrate 31 are bonded together.

[0064] Figure 1B The structure of the substrate 21 is shown, and the dotted line shows the substrate 31. The display unit 32 including a plurality of pixel circuits, the circuit 34, the wiring 35, etc. are provided on the substrate 21. In addition, an example in which an IC 43 and an FPC 42 are mounted on the substrate 31 is shown.

[0065] Figure 1BAn enlarged view of a portion of the display unit 32 is shown. The display unit 32 includes a plurality of signal lines 51 extending in the X direction, a plurality of scanning lines 52 extending in the Y direction, and a plurality of pixel electrodes 36 arranged in a matrix in the X direction and the Y direction. In addition, the display unit 32 is provided with a plurality of wirings 23 extending in the X direction and a plurality of wirings 24 extending in the Y direction. The wirings 23 have portions parallel to the signal lines 51, and the wirings 24 have portions parallel to the scanning lines 52.

[0066] The wiring 23 and the wiring 24 each have a function of a pair of electrodes constituting a touch sensor.

[0067] Thus, in the touch panel module 10 of one embodiment of the present invention, a pair of wirings used as electrodes of the touch sensor is provided on the same substrate as the pixel electrode 36, the signal line 51, the scanning line 52, etc. Therefore, since the pair of wirings of the touch sensor can be formed through the same process as the pixel electrode 36, the signal line 51, the scanning line 52, etc. related to the display of the image, the manufacturing cost can be reduced.

[0068] Capacitive coupling is generated between the wiring 23 and the wiring 24. For example, when a projected mutual capacitance driving method is adopted, one of the wiring 23 and the wiring 24 can be used as a wiring (electrode) on the transmission side, and the other can be used as a wiring (electrode) on the reception side. On the other hand, when a projected self-capacitance driving method is adopted, the wiring 23 and the wiring 24 can have the functions of both the wiring for transmission and the wiring for reception.

[0069] For example, it is preferable to form the wirings 23 and 24 by processing the same film as other wirings, electrodes, semiconductors, etc. provided in the signal line 51 , the scanning line 52 , the pixel electrode 36 , or the display unit 32 .

[0070] In addition, as a material that can be used for wiring 23 and wiring 24, for example, a material with a low resistance value is preferably used. As an example, metals such as silver, copper, and aluminum can be used. In addition, a metal nanowire composed of a plurality of extremely fine (for example, a diameter of several nanometers) conductors can be used. As an example, Ag nanowires, Cu nanowires, Al nanowires, etc. can be used. When using Ag nanowires, for example, a light transmittance of more than 89% and a film resistance value of more than 40Ω / □ and less than 100Ω / □ can be achieved. Since such a metal nanowire has a high transmittance, the metal nanowire can also be used for electrodes (for example, pixel electrodes or common electrodes) used for display elements.

[0071] Alternatively, a conductive oxide may be used for at least one of the wiring 23 and the wiring 24. For example, a conductive material containing indium oxide, tin oxide, or zinc oxide may be used. In addition, when a material that allows visible light to pass through is used for the wiring 23 or the wiring 24, the wiring and the display element may be overlapped and configured, and light from the display element may be emitted through the wiring. In other words, when a material that allows visible light to pass through is used, the wiring may overlap the pixel electrode 36.

[0072] A display element in which the pixel electrode 36 is used as an electrode can be used for the display unit 32. Here, as the display element, a transmissive liquid crystal display element or a light-emitting element such as an organic EL element can be used appropriately.

[0073] Note that the display element is not limited to this, and various elements can be used. For example, a reflective or semi-transmissive liquid crystal element, a display element (also called electronic ink) that displays by electrophoresis or electronic powder fluid (registered trademark) method, a shutter MEMS display element, an optical interference MEMS display element, etc. can be cited. In addition, the pixels included in the display unit 32 can also include pixel circuits in addition to display elements. The pixel circuit can also include, for example, transistors or capacitors and wiring electrically connecting them.

[0074] [Cross-sectional structure example 1] Figure 2A It is a schematic cross-sectional view of a part of the display unit 32 . Figure 2A An example of one pixel, a wiring 23, and a wiring 24 is shown. Here, a case where a liquid crystal element is used as a display element provided in a pixel is exemplified.

[0075] Although not shown here, in the touch panel module 10 , the substrate 21 and the substrate 31 are bonded together at the edge portion by an adhesive layer or the like. Liquid crystal 37 is sealed between the substrate 21 and the substrate 31 .

[0076] In the display unit 32, a transistor 70, a pixel electrode 36, wirings 23 and 24 are provided on a substrate 21. A coloring layer 65, a light shielding layer 66, a common electrode 38, and the like are provided on the surface of the substrate 31 facing the substrate 21.

[0077] The transistor 70 includes a conductive layer 71 serving as a gate, a semiconductor layer 72, an insulating layer 73 serving as a gate insulating layer, a conductive layer 74a serving as one of a source and a drain, a conductive layer 74b serving as the other of the source and the drain, and the like.

[0078] Here, for example, the conductive layer 74 a is a part of the signal line 51 , and the conductive layer 71 is a part of the scanning line 52 .

[0079] In addition, an insulating layer 81 is provided to cover the transistor 70, and a pixel electrode 36 is provided on the insulating layer 81. The pixel electrode 36 is electrically connected to the conductive layer 74b through an opening of the insulating layer 81. The liquid crystal element 60 is composed of the pixel electrode 36, the common electrode 38, and the liquid crystal 37 sandwiched therebetween. Figure 2A In the embodiment, the liquid crystal element 60 is a transmissive liquid crystal element using the VA (Vertical Alignment) mode.

[0080] Here, as a mode of the liquid crystal element 60, a mode in which a pair of electrodes are arranged in the thickness direction of the touch panel module 10 and an electric field is applied in the thickness direction to the liquid crystal 37 is shown. Note that the arrangement method of the electrodes is not limited to this, and a mode in which an electric field is applied in a direction perpendicular to the thickness direction may also be applied.

[0081] A normally black liquid crystal display device, such as a transmissive liquid crystal display device using a vertical alignment (VA) mode, can be used for the touch panel module 10. As the vertical alignment mode, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ASV (Advanced Super View) mode, etc. can be used.

[0082] As the liquid crystal element 60, liquid crystal elements of various modes can be used. For example, in addition to the VA mode, liquid crystal elements of TN (Twisted Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe Field Switching) mode, ASM (Axially Symmetric Aligned Micro-cell) mode, OCB (Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (AntiFerroelectric Liquid Crystal) mode, etc. can be used.

[0083] In addition, a liquid crystal element is an element that uses the optical modulation effect of liquid crystal to control the transmission or non-transmission of light. The optical modulation effect of liquid crystal is controlled by the electric field (including the lateral electric field, the longitudinal electric field or the oblique electric field) applied to the liquid crystal. As liquid crystals used in liquid crystal elements, thermotropic liquid crystals, low molecular liquid crystals, polymer liquid crystals, polymer dispersed liquid crystals (PDLC: Polymer Dispersed Liquid Crystal), ferroelectric liquid crystals, antiferroelectric liquid crystals, etc. can be used. These liquid crystal materials present cholesteric phases, smectic phases, cubic phases, chiral nematic phases, isotropic phases, etc. depending on the conditions.

[0084] In addition, as the liquid crystal material, either positive liquid crystal or negative liquid crystal can be used, and an appropriate liquid crystal material can be adopted according to the applicable mode or design.

[0085] Figure 2A An example is shown in which the wiring 24 and the conductive layer 71 are formed by processing the same conductive film and are arranged on the same surface. In addition, an example is shown in which the wiring 23, the conductive layer 74a, and the conductive layer 74b are formed by processing the same conductive film and are arranged on the same surface. Here, the wiring 23 is formed on the insulating layer 73, and the wiring 24 is formed on the insulating substrate 21. Since the insulating layer 73 is provided between the wiring 23 and the wiring 24, the wiring 23 and the wiring 24 can be crossed without using a special method.

[0086] like Figure 2A As shown, capacitive coupling occurs between the wiring 23 and the wiring 24. For example, when a projected capacitive driving method is adopted, one of the wiring 23 and the wiring 24 can be used as an electrode on the transmission side and the other can be used as an electrode on the reception side.

[0087] Polarizing plates 61 and 62 are provided in a manner sandwiching substrates 21 and 31. In addition, a backlight 63 is provided outside the polarizing plate 62. Therefore, light from the backlight is Figure 2A The substrate 21 side is the display surface side.

[0088] The backlight 63 may be a direct-type backlight or an edge-lit backlight. When a direct-type backlight having an LED is used, local dimming is easy to perform, thereby improving the contrast, which is preferred. In addition, when an edge-lit backlight is used, the thickness of the touch panel module including the backlight can be reduced, which is preferred.

[0089] Here, as the polarizer 61 located on one side of the display surface, a linear polarizer or a circular polarizer can be used. As the circular polarizer, for example, a polarizer formed by laminating a linear polarizer and a quarter-wave phase difference plate can be used. In particular, as shown in FIG. 2 , when wiring 23 and wiring 24 constituting a touch sensor are configured on one side of the substrate 21, sometimes the wiring reflects external light and the reflected light is seen. At this time, by using a circular polarizer as the polarizer 61, reflection can be suppressed.

[0090] When a circular polarizer is used as the polarizer 61, a circular polarizer or a general linear polarizer may be used as the polarizer 62. The desired contrast ratio can be achieved by adjusting the cell gap, orientation, and driving voltage of the liquid crystal element 60 according to the types of polarizers used for the polarizers 61 and 62.

[0091] The coloring layer 65 may also be called a color filter, and converts the light from the backlight 63 into light of a specified color. For example, by using the coloring layer 65 corresponding to red, green, and blue for each pixel (sub-pixel), full-color display can be performed. In addition, when pixels (sub-pixels) corresponding to colors such as yellow and white are provided in addition to these three colors, power consumption can be reduced, which is preferred.

[0092] When a transmissive liquid crystal element is used as the liquid crystal element 60, a light-transmitting conductive film can be used for the pixel electrode 36 and the common electrode 38. When a reflective liquid crystal element is used as the liquid crystal element 60, a light-reflective material can be used for the pixel electrode 36 and the common electrode 38.

[0093] exist Figure 2A In the liquid crystal element 60, the pixel electrode 36 and the common electrode 38 have the function of transmitting visible light. By adopting this structure, the liquid crystal element 60 can be a transmissive liquid crystal element. For example, when the backlight 63 is arranged on one side of the substrate 31, the light from the backlight 63 polarized by the polarizer 62 passes through the substrate 31, the common electrode 38, the liquid crystal 37, the pixel electrode 36 and the substrate 21 and reaches the polarizer 61. At this time, the orientation of the liquid crystal 37 can be controlled by the voltage applied between the pixel electrode 36 and the common electrode 38 to control the optical modulation of the light. In other words, the intensity of the light emitted through the polarizer 61 can be controlled. In addition, because the light outside the specified wavelength region of the incident light is absorbed by the coloring layer 65, the extracted light becomes light with a peak in the specified wavelength region. For example, the light emitted through the polarizer 61 is red, green or blue light.

[0094] like Figure 2AAs shown, the transistor 70 is preferably overlapped with the light shielding layer 66. Thus, it is possible to suppress the light from the backlight 63 from irradiating the semiconductor layer 72 of the transistor 70, and the reliability can be improved. In addition, the wiring 23 and the wiring 24 are preferably overlapped with the light shielding layer 66. Thus, it is possible to suppress the light from the backlight 63 from being diffusely reflected on the wiring 23 and the wiring 24, and the contrast of the displayed image or video can be improved.

[0095] Figure 2B An example is shown in which both the wiring 23 and the wiring 24 are formed by processing the same conductive film as the conductive layer 74a and the conductive layer 74b. In this case, at the intersection of the wiring 23 and the wiring 24, the wiring 23 and the wiring 24 can be crossed by forming a bridge structure using a conductive layer processed from the same conductive film as the conductive layer 71 and the pixel electrode 36. For example, the conductive layer can be provided so as to overlap with one of the wiring 23 and the wiring 24, and the conductive layer can be electrically connected to the other of the wiring 23 and the wiring 24.

[0096] Figure 2C An example is shown in which both wiring 23 and wiring 24 are formed by processing the same conductive film as conductive layer 71. In this case, at the intersection of wiring 23 and wiring 24, a bridge structure can be formed by using a conductive layer processed from the same conductive film as conductive layer 74a or pixel electrode 36, as described above.

[0097] exist Figure 2A , 2B In 2C, a bottom-gate transistor is used as the transistor 70, but a top-gate transistor may also be used.

[0098] Figure 3A An example in which a top-gate structure transistor is used as the transistor 70 is shown.

[0099] Figure 3A The transistor 70 shown includes a semiconductor layer 72, an insulating layer 73 covering the semiconductor layer 72, and a conductive layer 71 overlapping a portion of the semiconductor layer 72. The semiconductor layer 72 includes a pair of low resistance regions 75 sandwiching a region where a channel is formed (a region overlapping the conductive layer 71). One of the low resistance regions 75 is used as a source, and the other is used as a drain. The conductive layer 74a and the conductive layer 74b are electrically connected to either of the low resistance regions 75 through an opening provided in the insulating layer 81.

[0100] exist Figure 3A In the embodiment, an insulating layer 82 is provided to cover the conductive layer 74a and the conductive layer 74b, and a pixel electrode 36 is provided on the insulating layer 82. The pixel electrode 36 is electrically connected to the conductive layer 74b through an opening provided in the insulating layer 82.

[0101] Figure 3A The example shown is that the wiring 23 is formed by processing the same conductive film as the conductive layers 74a and 74b, and the wiring 24 is formed by processing the same conductive film as the conductive layer 71. The wiring 23 is located on the insulating layer 81, and the wiring 24 is located on the insulating layer 73.

[0102] Figure 3B An example is shown in which both the wiring 23 and the wiring 24 are formed by processing the same conductive film as the conductive layer 71 . Figure 3C An example is shown in which both the wiring 23 and the wiring 24 are formed by processing the same conductive film as the conductive layer 74 a and the conductive layer 74 b .

[0103] Although FIG. 2A to FIG. 2C and FIG. 3A to FIG. 3C An example is shown in which the substrate 21 side is the display surface side, but the substrate 31 side may also be the display surface side. In this case, the backlight 63 may be arranged outside the polarizing plate 61. In this case, a circular polarizing plate may be used as the polarizing plate 61 located on the display surface side, or a circular polarizing plate may be provided in addition to the polarizing plate 61.

[0104] Here, an example is shown in which a backlight 63 is arranged outside the substrate 31 to use one side of the substrate 21 as the display surface and touch surface of the touch panel. By using the side of the substrate 21 supporting the wiring 23 and the wiring 24 as the touch surface of the touch panel, the physical distance between the sensing object and the wiring 23 or the wiring 24 can be reduced, thereby improving the sensing sensitivity of the touch sensor. However, one embodiment of the present invention is not limited to this, and a backlight 63 can also be arranged outside the substrate 21 to use one side of the substrate 31 as the display surface and touch surface of the touch panel.

[0105] The above is the description of Cross-Sectional Structure Example 1.

[0106] [Cross-sectional structure example 2] Next, an example in which a bottom emission type organic EL element is used as a display element provided in a pixel is described. Note that descriptions of parts overlapping with the above descriptions may be omitted.

[0107] Figure 4A It is a schematic cross-sectional view of a part of the display unit 32 . Figure 4A An example of one pixel, the wiring 23, and the wiring 24 is shown. In the display portion 32, the substrate 21 side is the display surface side.

[0108] In the touch panel module 10 , the substrate 21 and the substrate 31 are bonded together by the adhesive layer 68 .

[0109] In addition, an insulating layer 81 is provided in a manner covering the transistor 70, and a pixel electrode 36 is provided on the insulating layer 81. The pixel electrode 36 is electrically connected to the conductive layer 74b through an opening of the insulating layer 81. In addition, an insulating layer 83 is provided on the insulating layer 81. The insulating layer 83 has an opening overlapping with the pixel electrode 36. A portion of the insulating layer 83 covers the end of the pixel electrode 36. An EL layer 47 and a common electrode 48 are sequentially stacked on the insulating layer 83 and the pixel electrode 36. The light emitting element 40 is composed of the pixel electrode 36, the common electrode 48, and the EL layer 47 sandwiched therebetween.

[0110] Figure 4A The light emitting element 40 shown is a bottom emission type light emitting element that emits light toward the substrate 21 side supporting the light emitting element 40. Therefore, among a pair of electrodes included in the light emitting element 40, the pixel electrode 36 disposed on the substrate 21 side has a function of transmitting visible light, and the common electrode 48 disposed on the substrate 31 side has a function of reflecting visible light.

[0111] exist Figure 4A In the illustrated structure, the coloring layer 65 is provided on the side closer to the substrate 21 than the light emitting element 40 is.

[0112] The coloring layer 65 converts the light from the light emitting element 40 into light of a specified color. For example, when a light emitting element that emits white light is used as the light emitting element 40, full-color display can be performed by using the coloring layer 65 corresponding to red, green, and blue for each pixel (sub-pixel). In addition, when pixels (sub-pixels) corresponding to colors such as yellow and white are provided in addition to these three colors, power consumption can be reduced, which is preferred.

[0113] Note that the structure of the light emitting element 40 is not limited to this, and a top emission (top surface emission) type light emitting element or a double-sided emission (double-sided emission) type light emitting element may also be used. In addition, by forming EL layers 47 of light emitting elements 40 different from each other in each pixel (sub-pixel), light emitting elements 40 that emit light of different colors may be formed in each pixel (sub-pixel). In this case, the coloring layer 65 may not be provided.

[0114] Here, Figure 4A The example in which the polarizing plate 61 is provided on the outer side (ie, the display surface side) of the substrate 21 is shown. A circular polarizing plate is preferably used as the polarizing plate 61. By using a circular polarizing plate as the polarizing plate 61, reflection of the wiring 23 and the wiring 24 can be suppressed.

[0115] Figure 4B An example is shown in which both the wiring 23 and the wiring 24 are formed by processing the same conductive film as the conductive layer 74 a and the conductive layer 74 b . Figure 4CAn example is shown in which both the wiring 23 and the wiring 24 are formed by processing the same conductive film as the conductive layer 71 .

[0116] Figure 5A An example in which a top-gate structure transistor is used as the transistor 70 is shown. Figure 5B An example is shown in which both the wiring 23 and the wiring 24 are formed by processing the same conductive film as the conductive layer 74 a and the conductive layer 74 b . Figure 5C An example is shown in which both the wiring 23 and the wiring 24 are formed by processing the same conductive film as the conductive layer 71 .

[0117] Here, an example is shown in which a bottom-emitting light-emitting element is used as the light-emitting element 40 and the substrate 21 side is used as the display surface and touch surface of the touch panel. In particular, by using the substrate 21 side supporting the wiring 23 and the wiring 24 as the touch surface of the touch panel, the physical distance between the sensing object and the wiring 23 or the wiring 24 can be reduced, thereby improving the sensing sensitivity of the touch sensor. However, one embodiment of the present invention is not limited to this, and a top-emitting light-emitting element or a double-sided emission light-emitting element can also be used as the light-emitting element 40, and the substrate 31 side can be used as the display surface and touch surface of the touch panel.

[0118] [Wiring shape] [Wiring shape example 1] Fig. 6A 2 shows examples of top surface shapes of the wiring 23 and the wiring 24. The wiring 23 extends in the X direction, and the wiring 24 extends in the Y direction. One of the wirings 23 has a plurality of stripe-shaped portions extending in the X direction in a region overlapping with the display unit 32, and the stripe-shaped portions are connected in a region outside the display unit 32.

[0119] By adopting such a structure, in the portion overlapping with the display unit 32, the wiring 23 and the wiring 24 can be composed of only portions that are substantially parallel in the X direction and the Y direction, respectively. In this case, the wiring 23 can be arranged so as not to intersect with the signal line 51 (not shown) extending in the X direction, and they can be formed simultaneously by processing the same conductive film. Similarly, the wiring 24 can be arranged so as not to intersect with the scanning line 52 (not shown) extending in the Y direction, and they can be formed simultaneously by processing the same conductive film.

[0120] Here, if Figure 6BAs shown, a conductive layer 26a extending in the X direction may be provided between adjacent wirings 23. Similarly, a conductive layer 26b extending in the Y direction may be provided between wirings 24. The conductive layer 26a and the conductive layer 26b may be electrically floating, for example, or a specified constant potential may be supplied thereto. In this case, it is preferred that the wiring 23 and the conductive layer 26a are formed by processing the same conductive film, and the wiring 24 and the conductive layer 26b are formed by processing the same conductive film. Thus, within the display unit 32, the periodicity of the arrangement from the area where the wiring 23 or the wiring 24 is arranged to the area where they are not arranged may be maintained. Therefore, the unevenness of brightness caused by the difference in thickness of the stacked structure constituting the pixel between the pixels close to the wiring 23 or the wiring 24 and the pixels far away from them may be suppressed.

[0121] Note that although Fig. 6A and Figure 6B In the figures, the short side direction of the display portion 32 is shown as the X direction and the long side direction is shown as the Y direction, but the present invention is not limited thereto. The short side direction may be shown as the Y direction and the long side direction may be shown as the X direction.

[0122] [Wiring shape example 2] Fig. 7A Shown with Fig. 6A Examples of the wirings 23 and 24 having different shapes.

[0123] The wiring 23 and the wiring 24 have a portion parallel to the X direction and a portion parallel to the Y direction, respectively, and these two portions form a mesh top surface shape. At this time, in the plane, by arranging the wiring 23 and the wiring 24 in a manner such that the opening of the mesh includes one or more pixel electrodes 36 (not shown), they can prevent them from shielding the light from the display element.

[0124] In addition, if Figure 7B As shown, the conductive layer 26 may be arranged to fill the gap between the wiring 23 and the wiring 24. In this case, the conductive layer 26 preferably has a portion parallel to the X direction and a portion parallel to the Y direction, similarly to the wiring 23 or the wiring 24. In addition, a portion of the conductive layer 26 preferably has a mesh shape.

[0125] By forming the wiring 23 and the wiring 24 by processing different conductive films on different insulating layers, respectively, the wiring 23 and the wiring 24 can be crossed without using a special method. Alternatively, for example, the wiring 24 can also be a structure in which the island-shaped portion formed by processing the same conductive film as the wiring 23 and the island-shaped portion formed by processing the conductive film on an insulating layer different from the wiring 23 are connected together, so that the wiring 23 and the wiring 24 are crossed. Alternatively, the wiring 23 can also have a structure in which these two island-shaped portions are connected. Alternatively, it is also possible to form a portion parallel to the X direction and a portion parallel to the Y direction of at least one of the wiring 23 and the wiring 24 by processing different conductive films on different insulating layers, and connect the two portions, thereby making the wiring 23 and the wiring 24 cross without causing an electrical short circuit.

[0126] The above is the description of the wiring shape examples.

[0127] [Wiring structure example 1] Next, a more specific example of a wiring structure will be described when a liquid crystal element is used as the display portion 32. Note that in the following drawings, for convenience of description, layers, wirings, and the like obtained by processing the same conductive film are described with the same hatching pattern.

[0128] [Structural Example 1-1] Figure 8 An example of a configuration method (layout) of the signal line 51, the scanning line 52, the wiring 23, the wiring 24, the pixel electrode 36, etc. in the display unit 32 is shown. Figure 8 Equivalent to Fig. 6A or Fig. 7A Magnified view of area A.

[0129] The signal line 51 and the wiring 23 are arranged parallel to the X direction. The scanning line 52 and the wiring 24 are arranged parallel to the Y direction. In addition, the signal line 51 and the wiring 23 are formed by processing the same conductive film, and the scanning line 52 and the wiring 24 are formed by processing the same conductive film. Therefore, the wiring 23 and the wiring 24 can be formed without adding a process.

[0130] By adopting such a structure, the wiring 23 and the wiring 24, the signal line 51 and the wiring 24, and the scanning line 52 and the wiring 23 can be intersected without using a special method.

[0131] Figure 8 The pixel circuit 80 including the transistor 70 and the pixel electrode 36 is shown. The pixel circuit 80 is arranged in a matrix in the X direction and the Y direction. The pixel circuit 80 corresponds to one sub-pixel included in the display unit 32.

[0132] In the pixel circuit 80, a portion of the scanning line 52 is used as a gate electrode. A portion of the signal line 51 is used as a source electrode or a drain electrode. Figure 8 As shown, the semiconductor layer 72 is arranged to overlap with the protruding portion of the scanning line 52, and the protruding portion of the signal line 51 is arranged to overlap with a portion of the semiconductor layer 72. In addition, a conductive layer 74b is provided on the semiconductor layer 72 on the side opposite to the signal line 51. The conductive layer 74b is electrically connected to the pixel electrode 36.

[0133] The wiring 23 is arranged between two pixel circuits 80 adjacent in the Y direction. Alternatively, the wiring 23 may be arranged between two pixel electrodes 36 adjacent in the Y direction, between two signal lines 51, between two semiconductor layers 72, or between two conductive layers 74b.

[0134] The wiring 24 is arranged between two pixel circuits 80 adjacent in the X direction. Alternatively, the wiring 24 may be arranged between two pixel electrodes 36 adjacent in the X direction, between two scanning lines 52, between two semiconductor layers 72, or between two conductive layers 74b.

[0135] Here, in Figure 8 , an example in which the width of wiring 24 is larger than the width of wiring 23 is shown. For example, in the case where a material having a lower conductivity than wiring 23 is used as wiring 24 or in the case where wiring 24 is arranged along the long side direction of the display portion, in order to reduce the resistance, it is preferable to set the width of wiring 24 to be larger than wiring 23. Alternatively, in order to reduce the resistance of wiring 24, the thickness of wiring 24 may be formed to be thicker than wiring 23. Note that the widths of wiring 23 and wiring 24 are not limited to this, and the width of wiring 23 may be larger than that of wiring 24, or the widths of wiring 23 and wiring 24 may be substantially the same. For example, the width, thickness, or material of wiring 23 and wiring 24 may be appropriately set so that the time constants of wiring 23 and wiring 24 are substantially the same or the time constant of the wiring used for detection of wiring 23 and wiring 24 is smaller than the other.

[0136] [Structural example 1-2] Fig. 9A The structure of the wiring 24 is shown Figure 8 Examples of different situations. Fig. 9A The wiring 24 shown has a structure in which a portion formed by processing the same conductive film as the signal line 51 and a portion formed by processing the same conductive film as the scanning line 52 are arranged alternately. The two portions have a mutually overlapping region and are electrically connected in the region through an opening provided in the insulating layer located therebetween.

[0137] A portion of the wiring 24 formed by processing the same conductive film as the scanning line 52 intersects at least one of the signal line 51 and the wiring 23 .

[0138] [Structural Examples 1-3] Fig. 9B The structure of the wiring 23 is shown. Figure 8 Examples of different situations. Fig. 9B The wiring 23 shown has a structure in which a portion formed by processing the same conductive film as the signal line 51 and a portion formed by processing the same conductive film as the scanning line 52 are arranged alternately. The two portions have a mutually overlapping region and are electrically connected in the region through an opening provided in the insulating layer located therebetween.

[0139] A portion of the wiring 23 formed by processing the same conductive film as the signal line 51 intersects at least one of the scanning line 52 and the wiring 24 .

[0140] Here, for example, as in the above-mentioned wiring shape example 1 ( Fig. 6A and Figure 6B As shown in FIG. 1 , structural examples 1-1 to 1-3 can be appropriately used when the wiring 23 and the wiring 24 have a stripe shape in the portion overlapping with the display portion 32.

[0141] [Structural Example 2-1] Fig. 10A An example is shown in which the wiring 23 has both a portion parallel to the X direction and a portion parallel to the Y direction. Fig. 10B An example is shown in which the wiring 24 has both a portion parallel to the X direction and a portion parallel to the Y direction. Fig. 10A Equivalent to Fig. 7A A magnified view of area B, Fig. 10B Equivalent to Fig. 7A An enlarged view of the region C. Note that although the wiring 23 is described as an example here, the wiring 24, the conductive layer 26, the conductive layer 26a, the conductive layer 26b, etc. may also have the same shape.

[0142] The portion parallel to the X direction of the wiring 23 is formed by processing the same conductive film as the signal line 51. On the other hand, the portion parallel to the Y direction is formed by processing the same conductive film as the scanning line 52. In addition, the wiring 23 is electrically connected at the portion where the portion parallel to the X direction and the portion parallel to the Y direction intersect through the opening of the insulating film provided therebetween. By adopting this structure, the wiring 23 can be made into a mesh shape.

[0143] Here, it can also be said that the wiring 23 has an opening, and the opening is surrounded by two adjacent parts parallel to the X direction and two adjacent parts parallel to the Y direction. In FIG. 10, although the structure in which the opening includes three pixel electrodes 36 is shown, it is not limited to this, and more than one pixel electrode 36 may be included. By making the wiring 23 have a dense mesh, the resistance of the wiring 23 can be reduced. By making the wiring 23 have a sparse mesh, the parasitic capacitance of the wiring 23 can be reduced.

[0144] In addition, in FIG. 10 , although the interval between two adjacent portions parallel to the X direction and the interval between two adjacent portions parallel to the Y direction of the wiring 23 are configured to be substantially the same, they may be different. For example, two adjacent portions parallel to the Y direction may have an interval equivalent to two pixels (for example, when there are three types of sub-pixels, RGB, an interval equivalent to six sub-pixels), and two adjacent portions parallel to the X direction may have an interval equivalent to one pixel. In this case, the wiring 23 becomes a mesh whose opening is a rectangular mesh having a long side in the Y direction.

[0145] [Structural Example 2-2] Fig.11A FIG. 10 shows an example in which the structure of the wiring 23 is different from that in FIG. Fig.11A In the structure shown, the portion of the wiring 23 parallel to the X direction is formed by processing the same conductive film as the signal line 51. On the other hand, the portion of the wiring 23 parallel to the Y direction has a structure in which a portion (conductive layer) obtained by processing the same conductive film as the signal line 51 and a portion (conductive layer) obtained by processing the same conductive film as the scanning line 52 are arranged alternately. In addition, in the portion parallel to the Y direction, two different conductive layers have a region that overlaps with each other, and are electrically connected in this region through an opening provided in the insulating layer located between them.

[0146] Among the portions of the wiring 23 parallel to the Y direction, portions obtained by processing the same conductive film as the scanning line 52 intersect with the signal line 51 .

[0147] [Structure example 2-3] Fig. 11B The structure of the wiring 23 is shown in FIG. 10 and FIG. Fig.11A Examples of different situations. Fig. 11BIn the structure shown, the portion of the wiring 23 parallel to the Y direction is formed by processing the same conductive film as the scanning line 52. On the other hand, the portion of the wiring 23 parallel to the X direction has a structure in which a portion (conductive layer) obtained by processing the same conductive film as the scanning line 52 and a portion (conductive layer) obtained by processing the same conductive film as the signal line 51 are arranged alternately. In addition, in the portion parallel to the X direction, two different conductive layers have a region that overlaps with each other, and are electrically connected in this region through an opening provided in the insulating layer located between them.

[0148] Among the portions of the wiring 23 parallel to the X direction, portions formed by processing the same conductive film as the signal line intersect with the scanning line 52 .

[0149] Here, for example, as in the above-mentioned wiring shape example 2 ( Fig. 7A and Figure 7B As shown in FIG. 2A , structural examples 2-1 to 2-3 can be appropriately used when the wiring 23 and the wiring 24 have a mesh shape.

[0150] [Structural Example 3-1] Although the above content shows an example of forming wiring 23 and wiring 24 by processing the same conductive film as signal line 51 and scanning line 52, it is also possible to form one or both of wiring 23 and wiring 24 by processing a conductive film different from signal line 51 or scanning line 52.

[0151] and Figure 8 The examples shown are different. Fig. 12A An example is shown in which the wiring 23 is formed by processing a conductive film different from the signal line 51 .

[0152] Here, the wiring 23 may be located above the signal line 51 and the scanning line 52, between the scanning line 52 and the signal line 51, or below the signal line 51 and the scanning line 52 (on the substrate 21 side). In this case, the wiring 23, the signal line 51, and the scanning line 52 are preferably provided on different insulating layers.

[0153] The wiring 23 can be formed, for example, by processing the same conductive film as the pixel electrode 36. In this case, the pixel electrode 36 and the wiring 23 can be formed in the same step.

[0154] Here, the wiring 23 and the wiring 24 may be electrically connected through an opening provided in an insulating layer overlapping therebetween, thereby forming a mesh shape.

[0155] In addition, in the case where the wiring 23 and the signal line 51 are provided on different insulating layers, as in Fig. 12BIn this case, no space is required for arranging the wiring 23 in the Y direction, thereby improving the resolution or increasing the aperture ratio.

[0156] Note that although Fig. 12B The case where the straight portion of the signal line 51 is included in the wiring 23 in the plane is shown, but the present invention is not limited to this. For example, the width of the wiring 23 may be smaller than the width of the signal line 51 to include the wiring 23 in the plane. In addition, a part of the signal line 51 may overlap the wiring 23, and the other part may not overlap the wiring 23. In this way, the parasitic capacitance between the signal line 51 and the wiring 23 can be reduced.

[0157] and Figure 8 The examples shown are different. Fig.13 An example is shown in which the wiring 24 is formed by processing a conductive film different from the scanning line 52 .

[0158] Fig.13 The example in which the wiring 24 is located closer to the substrate 21 than the wiring 23 and the signal line 51 is shown. However, the present invention is not limited thereto, and the wiring 24 may be provided on an insulating layer different from that of the signal line 51, the scanning line 52, and the wiring 23. Alternatively, the wiring 24 may be formed by processing the same conductive film as the pixel electrode 36.

[0159] [Structural Example 3-2] Fig.14A The example in which the wiring 23, the wiring 24, the signal line 51, and the scanning line 52 are formed by processing different conductive films is shown. Here, the wiring 23, the wiring 24, the signal line 51, and the scanning line 52 may be provided on different insulating layers.

[0160] Fig.14A An example is shown in which the wiring 24 is located at least above the wiring 23 , the signal line 51 , and the scanning line 52 , and the wiring 23 is located at least above the scanning line 52 .

[0161] Fig. 14B An example is shown in which the wiring 24 is located at least below the signal line 51 , and the wiring 23 is located at least below the wiring 24 and the scanning line 52 .

[0162] Note that the height direction position of each of the wiring 23, the wiring 24, the signal line 51, and the scanning line 52 is not limited to this, and various stacked-layer structures can be adopted.

[0163] In addition, although not shown here, Fig.14A and Fig. 14BIn the illustrated structure, the wiring 23 may overlap with at least a portion of the signal line 51 , and the wiring 24 may overlap with at least a portion of the scanning line 52 .

[0164] [Structural Example 3-3] Fig.15A An example is shown in which the mesh-shaped wiring 23 is formed by processing the same conductive film as the pixel electrode 36 .

[0165] Fig. 15B An example is shown in which the mesh-shaped wiring 23 is formed by using a conductive film different from that of the signal line 51 , the scanning line 52 , and the pixel electrode 36 . Fig. 15B An example is shown in which the wiring 23 is located at least above the scanning line 52 and below the signal line 51 .

[0166] Note that the height direction position of the wiring 23 is not limited to this, and the wiring 23 may be provided on an insulating layer different from the signal line 51, the scanning line 52, and the pixel electrode 36. In addition, the wiring 23 may be located below or above the signal line 51, the scanning line 52, and the pixel electrode 36, or between two of the signal line 51, the scanning line 52, and the pixel electrode 36.

[0167] Note that although the wiring 23 is described here, the wiring 24 (conductive layers 26a, 26b and conductive layer 26) may also have the same structure as this.

[0168] The above is the description of wiring structure example 1.

[0169] [Pixel structure example] Next, a more specific example of a pixel using a liquid crystal element provided in the display unit 32 will be described with reference to the drawings.

[0170] [Pixel structure example 1] Fig.16 A structural example of a pixel circuit 80 that can be used for a liquid crystal element adopting a VA mode is shown.

[0171] Fig.16 The pixel circuit 80 shown includes a transistor 70 , a capacitor 85 , a pixel electrode 36 , etc. In addition, one pixel circuit 80 is connected to a signal line 51 , a scanning line 52 , and a capacitor line 53 .

[0172] Part of the capacitance line 53 is used as one electrode of the capacitance element 85 provided in the pixel circuit 80. The capacitance line 53 may be supplied with a fixed potential such as a common potential, a ground potential, or a reference potential, or may be supplied with a pulse potential depending on the driving method.

[0173] Fig.16An example is shown in which the capacitor element 85 is composed of a part of the conductive layer 74 b , a part of the capacitor line 53 , and an insulating layer (not shown) located therebetween.

[0174] Fig.16 The example in which the capacitance line 53 is extended in a direction (Y direction) parallel to the scanning line 52 is shown. Note that the present invention is not limited to this, and the capacitance line 53 may be extended in a direction (X direction) parallel to the signal line 51 or may be arranged in a grid pattern in both directions.

[0175] also, Fig.16 An example is shown in which the capacitance line 53 is formed by processing the same conductive film as the scanning line 52, but the capacitance line 53 may be formed by processing the same conductive film as the signal line 51 and the pixel electrode 36, etc., or a conductive film different from these.

[0176] Fig.16 The case where the structure shown in the above-mentioned structural example 1-1 is used as an example of the wiring 23 and the wiring 24 is shown. In other words, Fig.16 The following example is shown: the wiring 23 extending in the X direction is formed by processing the same conductive film as the signal line 51, and the wiring 24 extending in the Y direction is formed by processing the same conductive film as the scanning line 52. In addition, the structures of the wiring 23 and the wiring 24 can also be replaced by the above-mentioned structural examples.

[0177] [Pixel structure example 2] Fig.17 A structural example of a pixel circuit 80 that can be used for a liquid crystal element adopting the FFS mode is shown.

[0178] Fig.17 The pixel circuit 80 shown includes a transistor 70, a pixel electrode 36, and a common electrode 38. In addition, the pixel circuit 80 is connected to the signal line 51, the scanning line 52, and the common wiring 54.

[0179] The common wiring 54 is supplied with a potential supplied to the common electrode 38. The common wiring 54 may be supplied with a fixed potential such as a common potential, a ground potential, or a reference potential, but may also be supplied with a pulse potential or the like depending on a driving method.

[0180] In the pixel circuit 80 , the common electrode 38 overlaps with the pixel electrode 36 . The pixel electrode 36 has a comb-tooth-like top surface shape. The common electrode 38 overlaps with at least a region between two protruding portions of the pixel electrode 36 .

[0181] like Fig.17 As shown in FIG. 1 , the edge of the protruding portion of the pixel electrode 36 is preferably inclined relative to the X direction or the Y direction. Fig.17In the embodiment, the portion of the pixel electrode 36 protruding in the oblique direction is arranged symmetrically with respect to the Y direction. Thus, it is preferable to provide two types of protruding portions symmetrical with respect to the X direction or the Y direction in the pixel electrode 36. By using such a pixel electrode 36, the viewing angle of the display unit 32 can be expanded.

[0182] In the pixel circuit 80, a capacitor element can be formed by the pixel electrode 36, the common electrode 38 and an insulating layer (not shown) therebetween. Therefore, no space is required for forming a capacitor line and a capacitor element, and the aperture ratio and resolution can be easily improved.

[0183] The common electrode 38 extends in the Y direction. In addition, the common electrode 38 is electrically connected to the common wiring 54 extending in a direction parallel to the X direction. Thus, the common electrodes 38 arranged in a plurality of pixel circuits 80 adjacent to each other in the Y direction and a plurality of pixel circuits 80 adjacent to each other in the X direction can be electrically connected to each other.

[0184] like Fig.17 As shown, by reducing the width of the common electrode 38 in the X direction in the portion where the common electrode 38 overlaps the signal line 51 , the parasitic capacitance between the common electrode 38 and the signal line 51 can be reduced, which is preferable.

[0185] In addition, although the example in which the pixel electrode 36 having a comb-tooth-shaped top surface is arranged above the common electrode 38 is shown here, their upper and lower positions can be interchanged. In this case, the following structure can be adopted: the common electrode 38 has a comb-tooth-shaped top surface shape, and the pixel electrode 36 is arranged in a manner overlapping between two protrusions of the common electrode 38.

[0186] also, Fig.17 An example is shown in which the common wiring 54 is formed by processing the same conductive film as the signal line 51, but the common wiring 54 can also be formed by processing the same conductive film as the scanning line 52, the common electrode 38, the pixel electrode 36, etc., or a conductive film different from them.

[0187] Fig.17 The case where the structure shown in the above-mentioned structural example 1-1 is used as an example of the wiring 23 and the wiring 24 is shown. In other words, Fig.17 The following example is shown: the wiring 23 extending in the X direction is formed by processing the same conductive film as the signal line 51, and the wiring 24 extending in the Y direction is formed by processing the same conductive film as the scanning line 52. In addition, the structures of the wiring 23 and the wiring 24 can also be replaced by the above-mentioned structural examples.

[0188] [Deformation example] Next, a description will be given of a configuration example of another pixel circuit that can be used as the above-described pixel circuit 80 .

[0189] Fig.18A and Fig.17 The structure shown is different mainly in the shape of the pixel electrode 36. The pixel electrode 36 has a top surface shape provided with one or more openings (slits).

[0190] At this time, if Fig.18A As shown in FIG. 1 , the slit shape of the pixel electrode 36 is preferably a V-shape in which a part of a square is bent, rather than a square. This can increase the viewing angle of the display unit 32 .

[0191] Fig.18A and Fig.17 Likewise, an example is shown in which a portion of the common electrode 38 is tapered to reduce the area where the common electrode 38 and the signal line 51 intersect between adjacent pixel circuits 80. By adopting this structure, the parasitic capacitance of the signal line 51 can be reduced.

[0192] Fig.18B Show Fig.18A The common electrode 38 has an opening that overlaps with the transistor 70 and the contact portion between the conductive layer 74b and the pixel electrode 36. Fig.18B In the embodiment, one opening is provided in one pixel circuit. In addition, the common electrode 38 extends in the X direction and the Y direction. The common electrode 38 includes a region overlapping with a portion of the signal line 51 and a region overlapping with a portion of the scanning line 52. By adopting this structure, the resistance of the common electrode 38 in the X direction and the Y direction can be reduced.

[0193] Fig.19 The example in which the common electrode 38 is arranged above the pixel electrode 36 is shown. Here, the pixel electrode 36 arranged below also has a comb-tooth-like top surface shape. The pixel electrode 36 and the common electrode 38 are arranged so as to mesh with each other in a plane.

[0194] Fig.19 An example is shown in which the edge of the protrusion of the pixel electrode 36 and the edge of the protrusion of the common electrode 38 are roughly consistent in the plane. However, the present invention is not limited to this, and the pixel electrode 36 and the common electrode 38 may be arranged in a manner that a part of the two protrusions overlap in the plane. Alternatively, the pixel electrode 36 and the common electrode 38 may be arranged in a manner that the two protrusions are separated in the plane.

[0195] like Fig.19As shown in FIG. 1 , the signal line 51 has a top surface shape in which a portion thereof is thinned, wherein the width of the portion overlapping with the scanning line 52 or the common electrode 38 is small, and the width of the other portion is large. By adopting this shape, the parasitic capacitance between the signal line 51 and other wirings or electrodes can be reduced while reducing the resistance of the signal line itself. Similarly, the scanning line 52 also has a top surface shape in which a portion thereof is thinned to reduce the area overlapping with the signal line 51.

[0196] Fig. 20 An example of a structure having two pixel circuits 80 in the X direction and two pixel circuits 80 in the Y direction is shown. Fig. 20 In the embodiment, one pixel circuit 80 is arranged symmetrically with respect to the X direction and the Y direction to form one unit including four pixel circuits 80.

[0197] Fig. 20 The common electrode 38 includes a portion extending in the X direction and a portion extending in the Y direction. Fig.19 In each sub-pixel, a portion for connecting the common electrodes 38 included in the pixel circuits 80 adjacent in the Y direction and a portion for connecting the common electrodes 38 included in the pixel circuits 80 adjacent in the X direction are configured. Fig. 20 In the structure shown, the portion where the common electrodes 38 included in the pixel circuits 80 adjacent in the Y direction are connected to each other has a shape extending in the X direction, and is arranged between the two pixel circuits 80 adjacent in the Y direction. In addition, the portion where the common electrodes 38 included in the pixel circuits 80 adjacent in the X direction are connected to each other has a shape extending in the Y direction, and is arranged between the two pixel circuits 80 adjacent in the X direction. As a result, the occupied area of ​​the portion where the common electrodes 38 of the adjacent pixel circuits 80 are connected to each other can be reduced, so that the aperture ratio or resolution can be improved.

[0198] The above is the description of the pixel structure example.

[0199] [Wiring structure example 2] Next, a more specific example of a wiring structure when an organic EL element is used as the display unit 32 is described. Note that in the following drawings, for the sake of convenience, the layers, wirings, etc. obtained by processing the same conductive film are described with the same hatching pattern. In addition, the description of the parts that overlap with the above-mentioned wiring structure example 1 is sometimes omitted.

[0200] [Structural Example 4-1] Fig.21 An example of a method of arranging (layout) the signal lines 51 , the scanning lines 52 , the power supply lines 55 , the wirings 23 , the wirings 24 , the pixel electrodes 36 , and the like in the display unit 32 is shown.

[0201] The signal line 51 and the wiring 23 are arranged parallel to the X direction. The scanning line 52 and the wiring 24 are arranged parallel to the Y direction. In addition, the signal line 51 and the wiring 23 are formed by processing the same conductive film, and the scanning line 52 and the wiring 24 are formed by processing the same conductive film. Therefore, the wiring 23 or the wiring 24 can be formed without adding a process.

[0202] The power line 55 has a function of supplying a potential or a signal to one electrode of the capacitor 85 of the pixel circuit 80. Here, an example is shown in which the power line 55 is parallel to the signal line 51. The power line 55 may also be parallel to the scanning line 52. In this case, the power line 55 is formed by processing the same conductive film as the scanning line 52, and the power line 55 and the signal line 51, and the power line 55 and the wiring 23 can be intersected without using a special method.

[0203] Fig.21 The pixel circuit 80 shown includes a transistor 70a, a transistor 70b, a capacitor 85, and a pixel electrode 36. The pixel circuits 80 are arranged in a matrix in the X direction and the Y direction. The pixel circuit 80 corresponds to one sub-pixel included in the display unit 32.

[0204] In the pixel circuit 80, a portion of the scanning line 52 is used as a gate electrode of the transistor 70a. A portion of the signal line 51 is used as a source electrode or a drain electrode of the transistor 70a. Fig.21 As shown, the semiconductor layer 72 is configured to overlap with a part of the scanning line 52, and the signal line 51 is configured to overlap with a part of the semiconductor layer 72. In addition, a conductive layer 74b is provided on the side of the semiconductor layer 72 opposite to the signal line 51, and the conductive layer 74b is used as the other of the source and drain of the transistor 70a. The conductive layer 74b is electrically connected to the conductive layer 76. A part of the conductive layer 76 is used as the gate electrode of the transistor 70b. The conductive layer 76 overlaps with the power supply line 55 to form a capacitor 85. That is, the other part of the conductive layer 76 is used as one electrode of the capacitor 85. In addition, a part of the power supply line 55 is used as the other electrode of the capacitor 85, and the other part is used as one of the source and drain of the transistor 70b. The other of the source and drain of the transistor 70b is electrically connected to the pixel electrode 36.

[0205] [Structural Example 4-2] Fig.22A The structure of the wiring 24 is shown Fig.21 Examples of different situations. Fig.22AThe wiring 24 shown has a structure similar to that of the structural example 1-2: a portion formed by processing the same conductive film as the signal line 51 and a portion formed by processing the same conductive film as the scanning line 52 are arranged alternately. The two portions have a mutually overlapping region, and are electrically connected in the region through an opening provided in the insulating layer located therebetween.

[0206] A portion of the wiring 24 formed by processing the same conductive film as the scanning line 52 intersects at least one of the signal line 51 , the power supply line 55 , and the wiring 23 .

[0207] [Structural Example 4-3] Fig. 22B The structure of the wiring 23 is shown. Fig.21 Examples of different situations. Fig. 22B The wiring 23 shown has a structure similar to that of the structural example 1-3: a portion formed by processing the same conductive film as the signal line 51 and a portion formed by processing the same conductive film as the scanning line 52 are arranged alternately. The two portions have a mutually overlapping region, and are electrically connected in the region through an opening provided in the insulating layer located therebetween.

[0208] [Structural Example 5-1] Fig.23 The example in which the wiring 23 has both a portion parallel to the X direction and a portion parallel to the Y direction as in the structural example 2-1 is shown. Note that although the wiring 23 is used as an example for description here, the wiring 24, the conductive layer 26, the conductive layer 26a, the conductive layer 26b, etc. may also have the same shape.

[0209] [Structural Example 5-2] Fig.24A The structure of the wiring 23 is shown. Fig.23 Examples of different situations. Fig.24A In the structure shown, similarly to the structural example 2-2, the portion of the wiring 23 parallel to the X direction is formed by processing the same conductive film as the signal line 51. On the other hand, the portion of the wiring 23 parallel to the Y direction has a structure in which a portion (conductive layer) obtained by processing the same conductive film as the signal line 51 and a portion (conductive layer) obtained by processing the same conductive film as the scanning line 52 are arranged alternately. In addition, in the portion parallel to the Y direction, two different conductive layers have a region that overlaps with each other, and are electrically connected in this region through an opening provided in the insulating layer located between them.

[0210] Among the portions of the wiring 23 parallel to the Y direction, a portion obtained by processing the same conductive film as the scanning line 52 intersects with at least one of the signal line 51 and the power supply line 55 .

[0211] [Structural Example 5-3] Fig. 24B The structure of the wiring 23 is shown. Fig.23 and Fig.24A Examples of different situations. Fig. 24B In the structure shown, similarly to the structure example 2-3, the portion of the wiring 23 parallel to the Y direction is formed by processing the same conductive film as the scanning line 52. On the other hand, the portion of the wiring 23 parallel to the X direction has a structure in which a portion (conductive layer) obtained by processing the same conductive film as the scanning line 52 and a portion (conductive layer) obtained by processing the same conductive film as the signal line 51 are arranged alternately. In addition, in the portion parallel to the X direction, two different conductive layers have a region that overlaps with each other, and are electrically connected in this region through an opening provided in the insulating layer located between them.

[0212] [Structural Example 6-1] Although the above content shows an example of forming wiring 23 and wiring 24 by processing the same conductive film as signal line 51 and scanning line 52, similar to structural example 3-1, one or both of wiring 23 and wiring 24 can also be formed by processing a conductive film different from signal line 51 or scanning line 52.

[0213] and Fig.21 The examples shown are different. Fig.25A and Fig.25B An example is shown in which the wiring 23 is formed by processing a conductive film different from the signal line 51 .

[0214] and Fig.21 The examples shown are different. Fig.26 An example is shown in which the wiring 24 is formed by processing a conductive film different from the scanning line 52 .

[0215] [Structural Example 6-2] Fig.27A Similar to the structural example 3-2, the wiring 23, the wiring 24, the signal line 51 and the scanning line 52 are formed by processing different conductive films. Here, the wiring 23, the wiring 24, the signal line 51 and the scanning line 52 may be provided on different insulating layers.

[0216] Fig.27A An example is shown in which the wiring 24 is located at least above the wiring 23 , the signal line 51 , and the scanning line 52 , and the wiring 23 is located at least above the scanning line 52 .

[0217] Fig.27BAn example is shown in which the wiring 24 is located at least below the signal line 51 , and the wiring 23 is located at least below the wiring 24 and the scanning line 52 .

[0218] [Structural Example 6-3] Fig.28A An example is shown in which a mesh-shaped wiring 23 is formed by processing the same conductive film as the pixel electrode 36 in the same manner as in Structural Example 3-3.

[0219] Fig.28B An example is shown in which the mesh-shaped wiring 23 is formed by using a conductive film different from that of the signal line 51 , the scanning line 52 , and the pixel electrode 36 . Fig.28B An example is shown in which the wiring 23 is located at least above the scanning line 52 and below the signal line 51 .

[0220] The above is the description of wiring structure example 2.

[0221] [Circuit Configuration Example] Fig.29 An example of a circuit diagram of a touch panel according to one embodiment of the present invention is shown. Fig.29 FIG. 1 shows a portion of a display unit in which two types of wiring constituting a touch sensor are arranged in stripes. For example, Fig.29 The example shown corresponds to Fig. 6A and Figure 6B etc. are examples shown.

[0222] The pixels 90 arranged in a matrix include transistors 70 and circuits 91. The circuit 91 includes at least one display element. Various display elements can be used as the display element. Typically, the above-mentioned liquid crystal element 60 or the light-emitting element 40 is preferably used.

[0223] The wiring 23a and the wiring 23b have a plurality of portions extending in a direction (X direction) parallel to the signal line 51. The wiring 24a and the wiring 24b have a plurality of portions extending in a direction (Y direction) parallel to the scanning line 52. The wiring 23a, the wiring 23b, the wiring 24a, and the plurality of portions of the wiring 24b are electrically connected in a region outside the display unit. In the following description, the wiring 23a and the wiring 23b are sometimes collectively referred to as the wiring 23, and the wiring 24a and the wiring 24b are sometimes collectively referred to as the wiring 24.

[0224] like Fig.29As shown, a capacitive element is formed by wiring 23 and wiring 24. That is, the capacitive element is configured in a matrix to form a touch sensor. The touch sensor can sense by using the change in the capacitance of the capacitive element caused by the approach of the sensing object. The capacitive element includes, for example, a first capacitive component of the portion where wiring 23 and wiring 24 overlap and a second capacitive component formed by the close configuration of wiring 23 and wiring 24. The second capacitive component is mainly the one that changes due to the approach of the sensing object.

[0225] Note that for ease of explanation, the example shown here includes four wirings (wiring 23a, wiring 23b, wiring 24a, and wiring 24b). Although the example in which the wiring extending in the X direction (wiring 23a, wiring 23b) has two portions parallel to the X direction and the wiring extending in the Y direction (wiring 24a, wiring 24b) has two portions parallel to the Y direction is shown, this is not limited to this, and each may have three or more portions. The number of pixels 90 provided between two straight line portions of one wiring is also not limited to Fig.29 The example shown may include more than one pixel 90 .

[0226] Fig.30 FIG. 1 shows a portion of a display unit when two types of wiring constituting a touch sensor are arranged in a mesh shape. For example, Fig.30 The example shown corresponds to Fig. 7A and Figure 7B etc. are examples shown. Fig.30 A portion where the mesh-like wiring 23 and the wiring 24 intersect is shown.

[0227] exist Fig.30 In the example shown, a capacitor element is similarly formed by the wiring 23 and the wiring 24. Sensing can be performed by utilizing the change in the capacitance of the capacitor element.

[0228] The above is the description of the circuit configuration example.

[0229] [Cross-sectional structure example 3] Next, a more detailed cross-sectional structure example of the touch panel module according to one embodiment of the present invention when a liquid crystal element is used as a display element will be described.

[0230] [Cross-sectional structure example 3-1] Fig.31 is a schematic cross-sectional view of the touch panel module 10 . Fig.31 Show Figure 1A An example of a cross section of a region including the FPC 42 , a region including the circuit 34 , a region including the display portion 32 , and the like.

[0231] The substrate 21 and the substrate 31 are bonded to each other by an adhesive layer 141. Liquid crystal 112 is sealed in a region surrounded by the substrate 21, the substrate 31, and the adhesive layer 141. A polarizing plate 130a is provided on the outer surface of the substrate 31. A polarizing plate 130b is provided on the outer surface of the substrate 21.

[0232] Although not shown, a backlight may be provided outside the polarizing plate 130 a or outside the polarizing plate 130 b .

[0233] A touch sensor 22 including wirings 23 and 24, a pixel electrode 111 of a liquid crystal element 60, transistors 201 and 202, a capacitor 203, a connection portion 204, wirings 35, and the like are provided over a substrate 21. The transistor 201 corresponds to, for example, the transistor 70 described above.

[0234] A coloring layer 131 , a light shielding layer 132 , an insulating layer 123 , a common electrode 113 of the liquid crystal element 60 , a spacer 124 , and the like are provided on the substrate 31 .

[0235] Insulating layers such as insulating layer 211, insulating layer 212, insulating layer 213, and insulating layer 214 are provided on substrate 21. A portion of insulating layer 211 is used as a gate insulating layer of each transistor, and another portion is used as a dielectric of capacitor 203. Insulating layer 212, insulating layer 213, and insulating layer 214 are provided in a manner covering each transistor and capacitor 203, etc. Insulating layer 214 is used as a planarization layer. In addition, it is shown here that the insulating layer covering transistors, etc. includes three layers of insulating layer 212, insulating layer 213, and insulating layer 214, but the insulating layer is not limited thereto, and may also be more than four layers, a single layer, or two layers. If not required, insulating layer 214 used as a planarization layer may not be provided.

[0236] The transistor 201 and the transistor 202 include a conductive layer 221 partially functioning as a gate electrode, a conductive layer 222 partially functioning as a source electrode or a drain electrode, and a semiconductor layer 231. Here, a plurality of layers obtained by processing the same conductive film are given the same hatching pattern.

[0237] Of the pair of conductive layers 222 of the transistor 202, the conductive layer 222 which is not electrically connected to the pixel electrode 111 functions as part of a signal line. The conductive layer 221 which functions as a gate electrode of the transistor 202 functions as part of a scanning line.

[0238] Fig.31 An example is shown in which the wiring 23 is formed by processing the same conductive film as the conductive layer 222 , and the wiring 24 is formed by processing the same conductive film as the conductive layer 221 .

[0239] Fig.31A cross section of a sub-pixel is shown as an example of the display unit 32. For example, the sub-pixel includes a transistor 202, a capacitor 203, a liquid crystal element 60, and a coloring layer 131. For example, by selectively forming the coloring layer 131, a sub-pixel that displays red, a sub-pixel that displays green, and a sub-pixel that displays blue are arranged, and full-color display can be performed. Here, a pixel circuit (sub-pixel circuit) is composed of a transistor 202, a capacitor 203, a pixel electrode 111, and wiring.

[0240] exist Fig.31 , an example in which a transistor 201 is provided is shown as an example of the circuit 34.

[0241] Although Fig.31 An example of providing a gate electrode in transistor 201 and transistor 202 is shown, but a structure in which a semiconductor layer 231 having a channel is formed by two gate electrodes sandwiched therebetween may also be used. By adopting this structure, the threshold voltage of the transistor can be controlled. At this time, two gate electrodes may also be connected, and the transistor may be driven by supplying the same signal to the two gate electrodes. Compared with other transistors, this transistor can improve the field effect mobility and increase the on-state current. As a result, a circuit capable of operating at high speed can be manufactured. Furthermore, the area occupied by the circuit portion can be reduced. By using a transistor with a large on-state current, even if the number of wirings increases when the display panel or touch panel is enlarged or high-definition, the signal delay of each wiring can be reduced, thereby suppressing the unevenness of the display.

[0242] The transistors included in the circuit 34 may have the same structure as the transistors included in the display unit 32. In addition, the plurality of transistors included in the circuit 34 may have the same structure or different structures. In addition, the plurality of transistors included in the display unit 32 may have the same structure or different structures.

[0243] At least one of the insulating layer 212 and the insulating layer 213 covering each transistor is preferably made of a material that does not easily diffuse impurities such as water or hydrogen. That is, the insulating layer 212 or the insulating layer 213 can be used as a barrier film. By adopting this structure, it is possible to effectively suppress the diffusion of impurities from the outside into the transistor, thereby realizing a touch panel with high reliability.

[0244] The pixel electrode 111 is provided over the insulating layer 214 and is electrically connected to one of the source and the drain of the transistor 202 through an opening formed in the insulating layer 214 , the insulating layer 213 , the insulating layer 212 , and the like. The pixel electrode 111 is electrically connected to one electrode of the capacitor 203 .

[0245] An insulating layer 123 is provided on the substrate 31 side to cover the coloring layer 131 and the light shielding layer 132. The insulating layer 123 may function as a planarizing layer. By using the insulating layer 123, the surface of the common electrode 113 can be made substantially planar, thereby making the alignment state of the liquid crystal 112 uniform.

[0246] exist Fig.31 In the embodiment, the liquid crystal element 60 is composed of a pixel electrode 111, a part of a common electrode 113, and a liquid crystal 112 sandwiched therebetween.

[0247] In addition, an alignment film for controlling the alignment of the liquid crystal 112 may be provided on the surface of the pixel electrode 111 , the common electrode 113 , the insulating layer 214 , etc., which is in contact with the liquid crystal 112 .

[0248] Fig.31 The example of the structure in which the conductive layer 23 and the conductive layer 24 are arranged so as not to overlap with the liquid crystal element 60 is shown. In addition, it is preferable that the wiring 23 and the wiring 24 overlap with the light shielding layer 132.

[0249] In the liquid crystal element 60, the pixel electrode 111 and the common electrode 113 have the function of allowing visible light to pass through. By adopting this structure, the liquid crystal element 60 can be a transmissive liquid crystal element. For example, when the backlight is arranged on one side of the substrate 31, the light from the backlight polarized by the polarizer 130a passes through the substrate 31, the common electrode 113, the liquid crystal 112, the pixel electrode 111 and the substrate 21 and reaches the polarizer 130b. At this time, the orientation of the liquid crystal 112 can be controlled by the voltage applied between the pixel electrode 111 and the common electrode 113 to control the optical modulation of the light. In other words, the intensity of the light emitted through the polarizer 130b can be controlled. In addition, because the light outside the specified wavelength region of the incident light is absorbed by the coloring layer 131, the light extracted thereby becomes, for example, light that appears red.

[0250] Here, as the polarizing plate 130b, a linear polarizing plate or a circular polarizing plate can be used. As the circular polarizing plate, for example, a polarizing plate formed by laminating a linear polarizing plate and a quarter-wave phase difference plate can be used. In particular, Fig.31 As shown, when the wiring 23 and the wiring 24 constituting the touch sensor are arranged closer to the substrate 21 than the light shielding layer 132, the wiring may reflect external light and the reflected light may be seen. In this case, by using a circular polarizing plate as the polarizing plate 130b, the reflection can be suppressed.

[0251] In addition, when a circular polarizer is used as the polarizer 130b, a circular polarizer or a general linear polarizer may be used as the polarizer 130a. The desired contrast ratio can be achieved by adjusting the cell gap, orientation, and driving voltage of the liquid crystal element used as the liquid crystal element 60 according to the types of polarizers used for the polarizers 130a and 130b.

[0252] The liquid crystal element 60 can adopt the various modes shown in Cross-sectional Structure Example 1.

[0253] The common electrode 113 is electrically connected to a conductive layer provided on the substrate 21 side through a connector 243 near an end of the substrate 31. Thus, a potential or a signal can be supplied to the common electrode 113 from an FPC or IC provided on the substrate 21 side.

[0254] For example, conductive particles can be used for the connector 243. As the conductive particles, particles of organic resin or silicon dioxide, etc., whose surfaces are covered with metal materials, can be used. As the metal material, nickel or gold is preferably used because it can reduce the contact resistance. In addition, particles in which two or more metal materials are layered, such as nickel covered with gold, are preferably used. In addition, the connector 243 is preferably made of a material that can be elastically deformed or plastically deformed. In this case, the conductive particles sometimes become Fig.31 By having this shape, the contact area between the connection body 243 and the conductive layer electrically connected to the connection body can be increased, thereby reducing the contact resistance and suppressing the occurrence of problems such as poor contact.

[0255] The connector 243 is preferably arranged in a manner covered by the adhesive layer 141. For example, the connector 243 may be spread after applying a paste or the like that becomes the adhesive layer 141. By arranging the connector 243 in the region where the adhesive layer 141 is provided, the above structure can be applied to a structure in which the adhesive layer 141 is used for the peripheral portion, such as a display device of a solid packaging structure or a display device of a hollow packaging structure.

[0256] A connection portion 204 is provided in a region near an end of the substrate 21 . The connection portion 204 is electrically connected to the FPC 42 via a connection layer 242 . Fig.31 An example of a structure in which the connection portion 204 is formed by laminating a part of the wiring 35 and a conductive layer obtained by processing the same conductive film as the conductive layer 111 .

[0257] The above is the description of the cross-sectional structure example 3-1.

[0258] [Cross-sectional structure example 3-2] Next, a cross-sectional structure example of a touch panel module 10 using a liquid crystal element of a different mode from the cross-sectional structure example 3-1 will be described. Note that the description of the parts overlapping with the above contents will be omitted below, and only the different points will be described.

[0259] Fig.32 An example of a liquid crystal element adopting the FFS mode is shown for the liquid crystal element 60. The liquid crystal element 60 includes a pixel electrode 151, a liquid crystal 152, and a common electrode 153.

[0260] A common electrode 153 is disposed on the insulating layer 214. In addition, an insulating layer 215 is provided to cover the common electrode 153, and a pixel electrode 151 is provided on the insulating layer 215. The pixel electrode 151 is electrically connected to one of the source and the drain of the transistor 202 through an opening provided in the insulating layer 215, the insulating layer 214, the insulating layer 213, and the insulating layer 212.

[0261] The pixel electrode 151 has a comb-shaped top surface or a top surface with slits. The common electrode 153 is arranged to overlap the pixel electrode 151. The region overlapping the color layer 131 or the like includes a portion on the common electrode 153 where the pixel electrode 151 is not arranged.

[0262] Fig.32 The following example is shown: the pixel electrode 151 having a comb-tooth top surface shape or a top surface shape with slits is disposed above the insulating layer 215, and the common electrode 153 is disposed below the insulating layer 215. Fig.33 As shown, a common electrode 153 may be formed above the insulating layer 215, and a pixel electrode 151 may be formed below the insulating layer 215. In this case, the pixel electrode 151 disposed below the insulating layer 215 may be electrically connected to one of the source and the drain of the transistor 202. In addition, the common electrode 153 disposed above the insulating layer 215 may have a comb-shaped top surface or a top surface with slits.

[0263] In addition, Fig.32 In the embodiment, the pixel electrode 151 and the common electrode 153 are stacked with the insulating layer 215 interposed therebetween, and the capacitor 203 is formed here. Therefore, it is not necessary to form a capacitor separately, and the aperture ratio of the pixel can be increased.

[0264] Here, a transmissive liquid crystal element can be realized by using a conductive material that transmits visible light as the common electrode 153. In addition, when a conductive material that transmits visible light is used as both the pixel electrode 151 and the common electrode 153, the aperture ratio can be further increased, which is preferred.

[0265] For example, when a reflective liquid crystal element is used, a material that reflects visible light may be used for one or both of the pixel electrode 151 and the common electrode 153. When a material that reflects visible light is used for both the pixel electrode 151 and the common electrode 153, the aperture ratio can be increased. Alternatively, a material that reflects visible light may be used for the common electrode 153 and a material that transmits visible light may be used for the pixel electrode 151.

[0266] Alternatively, a semi-transmissive liquid crystal element may be realized by using a material that reflects visible light for the pixel electrode 151 and a material that transmits visible light for the common electrode 153. In this case, a reflective mode using light reflected by the pixel electrode 151 and a transmissive mode using light from a backlight that passes through a slit provided in the pixel electrode 151 may be switched.

[0267] In addition, when the lateral electric field method is adopted, a liquid crystal presenting a blue phase without an orientation film can also be used. The blue phase is a type of liquid crystal phase, and refers to a phase that appears just before the transition from the cholesteric phase to the homogeneous phase when the temperature of the cholesteric liquid crystal is raised. Since the blue phase only appears within a narrow temperature range, a liquid crystal composition in which a chiral agent is mixed is used in the liquid crystal layer to expand the temperature range. Since the liquid crystal composition containing a liquid crystal presenting a blue phase and a chiral agent has a fast response speed and is optically isotropic. In addition, the liquid crystal composition containing a liquid crystal presenting a blue phase and a chiral agent does not require an orientation treatment and has a small viewing angle dependence. In addition, since there is no need to set an orientation film and no friction treatment is required, electrostatic damage caused by the friction treatment can be prevented, and defects or damage to the liquid crystal display device in the manufacturing process can be reduced.

[0268] [Cross-sectional structure example 3-3] Next, a cross-sectional structural example of a touch panel module 10 using a liquid crystal element of a different mode from the cross-sectional structural examples 3-1 and 3-2 will be described. Note that the description of the parts overlapping with the above contents will be omitted below, and only the differences will be described.

[0269] Fig.34 An example of a liquid crystal element adopting an IPS mode is shown for the liquid crystal element 60. The liquid crystal element 60 includes a pixel electrode 151, a liquid crystal 152, and a common electrode 153.

[0270] The pixel electrode 151 and the common electrode 153 are disposed on the insulating layer 214. The pixel electrode 151 and the common electrode 153 have a comb-shaped top surface shape and are arranged in a manner of interlocking with each other. It is preferred that the pixel electrode 151 and the common electrode 153 are formed by processing the same conductive film. Fig.34 Different hatching lines are added to the pixel electrode 151 and the common electrode 153.

[0271] The above is the description of Cross-Sectional Structure Example 3.

[0272] [Cross-sectional structure example 4] Next, a more detailed cross-sectional structure example of a touch panel module according to one embodiment of the present invention when an organic EL element is used as a display element is described. Note that descriptions of parts overlapping with the above may be omitted.

[0273] [Cross-sectional structure example 4-1] Fig.35 is a schematic cross-sectional view of the touch panel module 10 . Fig.35 Show Figure 1A An example of a cross section including a region including FPC 42, a region including circuit 34, a region including display unit 32, etc. Fig.35 Shown corresponding to Fig.21 An example of a cross section of the display portion 32 taken along line X1 - X2 is shown.

[0274] The substrate 21 and the substrate 31 are bonded together by an adhesive layer 141. A part of the adhesive layer 141 has a function of sealing the light emitting element 40. In addition, it is preferable that a polarizing plate 130 is provided on the outer surface of the substrate 21.

[0275] A touch sensor 22 including wiring 23 and wiring 24, a light-emitting element 40, a transistor 201, a transistor 202, a transistor 205, a capacitor 203, a connection portion 204, a coloring layer 131, a wiring 35, and the like are provided on the substrate 21. The light-emitting element 40 has a stacked structure of a pixel electrode 111, an EL layer 102, and a common electrode 103. The light-emitting element 40 is a bottom emission type light-emitting element that emits light toward the substrate 21 side.

[0276] Insulating layers such as insulating layer 211, insulating layer 212, insulating layer 213, insulating layer 214, and insulating layer 215 are provided on substrate 21. A portion of insulating layer 211 is used as a gate insulating layer of each transistor, and another portion is used as a dielectric of capacitor 203. Insulating layer 212, insulating layer 213, and insulating layer 214 are provided in a manner covering each transistor and capacitor 203, etc. Insulating layer 214 is used as a planarization layer. In addition, it is shown here that the insulating layer covering transistors, etc. includes three layers of insulating layer 212, insulating layer 213, and insulating layer 214, but the insulating layer is not limited thereto, and may also be more than four layers, a single layer, or two layers. If not required, insulating layer 214 used as a planarization layer may not be provided. Insulating layer 215 covers the end of pixel electrode 111 or electrically connects the contact portion of pixel electrode 111 with transistor 205, etc. Insulating layer 215 is used as a planarization layer.

[0277] The transistor 201, the transistor 202, and the transistor 205 include a conductive layer 221 partially functioning as a gate electrode, a conductive layer 222 partially functioning as a source electrode or a drain electrode, and a semiconductor layer 231. Here, a plurality of layers obtained by processing the same conductive film are given the same hatching.

[0278] Fig.35 An example is shown in which the capacitor 203 is formed of a portion of the conductive layer 221 which functions as a gate electrode of the transistor 205 , a portion of the insulating layer 211 , and a portion of the conductive layer 222 which functions as a source electrode or a drain electrode of the transistor 205 .

[0279] Here, of the pair of conductive layers 222 of the transistor 202, the conductive layer 222 which is not electrically connected to the capacitor 203 functions as a part of a signal line. The conductive layer 221 which functions as a gate electrode of the transistor 202 functions as a part of a scanning line.

[0280] Fig.35 An example is shown in which the wiring 23 is formed by processing the same conductive film as the conductive layer 222, and the wiring 24 is formed by processing the same conductive film as the conductive layer 221.

[0281] exist Fig.35 , a cross section including a sub-pixel is shown as an example of the display unit 32. For example, the sub-pixel includes a transistor 202, a capacitor 203, a transistor 205, a light-emitting element 40, and a coloring layer 131. For example, by selectively forming the coloring layer 131, a sub-pixel that presents red, a sub-pixel that presents green, and a sub-pixel that presents blue are arranged, and full-color display can be performed. Here, a pixel circuit (sub-pixel circuit) is composed of a transistor 202, a capacitor 203, a transistor 205, a pixel electrode 111, and wiring.

[0282] Although Fig.35 Although an example of a structure in which one gate electrode is provided in the transistor 201 , the transistor 202 , and the transistor 205 is shown, a structure in which the semiconductor layer 231 in which a channel is formed is sandwiched between two gate electrodes may be employed.

[0283] A pixel electrode 111 is provided over the insulating layer 214. The pixel electrode 111 is electrically connected to one of a source and a drain of the transistor 205 through an opening formed in the insulating layer 214, the insulating layer 213, the insulating layer 212, or the like. The other of the source and the drain of the transistor 205 is electrically connected to the capacitor 203.

[0284] A coloring layer 131 is provided on the insulating layer 213. The coloring layer 131 is arranged to overlap the light emitting element 40. In addition, an insulating layer 214 serving as a planarization layer is provided to cover the coloring layer 131. Covering the coloring layer 131 with the insulating layer 214 is preferred because the surface of the pixel electrode 111 can be made substantially planar.

[0285] In the light emitting element 40, the pixel electrode 111 has a function of transmitting visible light, and the common electrode 103 has a function of reflecting visible light. By adopting this structure, a bottom emission type light emitting element that emits light toward the substrate 21 side supporting the light emitting element 40 can be realized. In addition, by making both the pixel electrode 111 and the common electrode 103 have a function of transmitting visible light, a dual emission type light emitting element can be formed.

[0286] In addition, Fig.35 In the embodiment, a light emitting element that exhibits white can be appropriately used as the light emitting element 40. Thus, it is not necessary to form light emitting elements 40 for different sub-pixels, and thus a high-definition touch panel can be realized. At this time, when the light from the light emitting element 40 passes through the coloring layer 131, the light outside the specified wavelength region is absorbed by the coloring layer 131. Thus, the extracted light is, for example, red light.

[0287] Here, a circular polarizer is preferably used as the polarizer 130. In particular, Fig.35 As shown in FIG. 1 , when the substrate 21 side is the display surface side, the wiring 23 and the wiring 24 constituting the touch sensor may reflect external light and the reflected light may be seen. In this case, by using a circular polarizing plate as the polarizing plate 130 , the reflection can be suppressed.

[0288] Fig.36 An example of a cross-sectional structure of a touch panel module 10 having a hollow sealed structure is shown.

[0289] Fig.36 The example in which the adhesive layer 141 does not cover the light emitting element 40 but is provided at the outer periphery of the substrate 31 is shown. A space 142 is provided between the common electrode 103 and the substrate 31.

[0290] The space 142 may be filled with air, but is preferably filled with an inert gas such as a rare gas or nitrogen gas. In addition, when the air pressure of the space 142 is lower than the atmospheric pressure in a steady state, the expansion of the space 142 due to the use environment (such as air pressure or temperature) and the expansion of the substrate 31 or the substrate 21 can be suppressed. On the other hand, when the air pressure of the space 142 is higher than the atmospheric pressure, impurities such as moisture can be suppressed from diffusing from the substrate 31, the substrate 21, the adhesive layer 141 or the gaps between them to the space 142.

[0291] also, Fig.36The example in which the desiccant 143 is provided between the substrate 31 and the common electrode 103 is shown. In this case, when at least the portion of the substrate 31 overlapping the display unit 32 is thinner than the peripheral portion, the desiccant 143 can be used without increasing the thickness of the touch panel module 10.

[0292] As the desiccant 143, for example, a substance that absorbs water by chemical adsorption, such as an oxide of an alkaline earth metal (calcium oxide, barium oxide, etc.), or a substance that absorbs water by physical adsorption, such as zeolite or silica gel, may be used.

[0293] The above is the description of the cross-sectional structure example 4-1.

[0294] [Cross-sectional structure example 4-2] Fig.37 An example is shown in which the coloring layer 131 is formed on a different substrate.

[0295] exist Fig.37 In the embodiment, the coloring layer 131 and the light shielding layer 132 are formed on the substrate 161. In addition, the substrate 161 is bonded to the substrate 21 by the bonding layer 251.

[0296] The coloring layer 131 is provided at least at a position overlapping the light emitting element 40. The light shielding layer 132 is provided at a position overlapping the wiring 23, the wiring 24, the transistor 202, the transistor 205, the capacitor 203, the transistor 201, and the like.

[0297] The light shielding layer 132 has a function of shielding visible light.

[0298] By adopting such a structure, even if the substrate 21 side is used as the display surface, reflection of external light by the wiring 23, the wiring 24, etc. can be suppressed, and the contrast can be improved.

[0299] At this time, the substrate 161 can also be used as a protective substrate for protecting the substrate 21 or the like. In this case, it is preferred to provide a protective layer (ceramic coating, etc.) on the substrate. As the protective layer, for example, inorganic insulating materials such as silicon oxide, aluminum oxide, yttrium oxide, and yttria-stabilized zirconia (YSZ) can be used. In addition, tempered glass can also be used for the substrate. As the tempered glass, tempered glass to which compressive stress is applied to its surface by physical or chemical treatment such as ion exchange method or air cooling strengthening method can be used.

[0300] Fig.38 An example is shown in which the coloring layer 131 and the light shielding layer 132 are formed on the side of the substrate 21 opposite to the side on which the wiring 23 and the like are formed.

[0301] At this time, the substrate 162 may be provided using the adhesive layer 251 to protect the coloring layer 131 and the light shielding layer 132 .

[0302] [Cross-sectional structure example 4-3] Fig.39 An example of a cross-sectional structure when a light-emitting element 40 is formed in each sub-pixel is shown.

[0303] exist Fig.35 In the above, the EL layer 102 is integrally provided. On the other hand, Fig.39 The EL layer 102 shown has an island-like top surface shape.

[0304] exist Fig.39 In the example shown, the EL layer 102 can be formed in each sub-pixel, so that the light-emitting element 40 provided in one sub-pixel can display a color different from that of an adjacent sub-pixel. Therefore, full-color display is possible even without providing the coloring layer 131.

[0305] [Cross-sectional structure example 4-4] Fig.40 An example in which a top emission type light-emitting element is used is shown.

[0306] Fig.40 The light emitting element 40 shown emits light toward the substrate 31 side. Therefore, the substrate 31 side is the display surface side and the touch surface side. In addition, the polarizing plate 130 is located on the outer surface of the substrate 31.

[0307] The pixel electrode 111 of the light emitting element 40 has a function of reflecting visible light, and the common electrode 103 has a function of shielding visible light.

[0308] A coloring layer 131 , a light shielding layer 132 , and the like are provided on the substrate 31 .

[0309] also, Fig.40 An example is shown in which the spacer 124 is provided on the side of the substrate 31. The spacer 124 has a function of adjusting the distance between the substrate 21 and the substrate 31. Fig.40 The case where there is a gap between the spacer 124 and the common electrode 103 or the insulating layer 215 is shown, but they can also be in contact with each other. Although the structure in which the spacer 124 is set on one side of the substrate 31 is shown here, it can also be set on one side of the substrate 21 (for example, on the insulating layer 215). Alternatively, a granular spacer can be used instead of the spacer 124. As the granular spacer, a material such as silicon dioxide can be used, but it is preferable to use an elastic material such as an organic resin or rubber. At this time, the granular spacer sometimes becomes a flattened shape in the vertical direction.

[0310] like Fig.40 As shown, when a top emission type light emitting element 40 is used, the pixel electrode 111 can be provided so as to cover the transistor 202, the transistor 205, the capacitor 203, etc. Therefore, the aperture ratio of the pixel can be increased, which is preferable.

[0311] Fig.40 An example in which the common electrode 103 has an opening is shown. The opening overlaps with the wiring 23 and the wiring 24. In this way, even when the substrate 31 side is the touch surface, it is preferable to provide a region without a conductive layer to which a predetermined potential can be supplied between the touch surface and the wiring 23 or the wiring 24. Therefore, the electric field from the wiring 23 or the wiring 24 is not shielded by the conductive layer, and the change in the capacitance between the wiring 23 and the wiring 24 caused by the operation such as touch can be increased, thereby improving the sensing sensitivity.

[0312] In this case, a region where the EL layer 102 is not arranged is preferably provided at a position overlapping with the wiring 23 and the wiring 24. In particular, when the end of the EL layer 102 is covered with the common electrode 103, the EL layer 102 is not exposed, thereby improving reliability.

[0313] In addition, when the light shielding layer 132 having a plurality of openings is provided throughout the display portion 32, the light shielding layer 132 preferably has insulating properties. When the light shielding layer 132 overlapping the wiring 23 or the wiring 24 has insulating properties, the electric field from the wiring 23 or the wiring 24 is not shielded by the light shielding layer 132, thereby improving the sensing sensitivity.

[0314] [Deformation example] Fig.41 FIG. 1 shows an example of a cross-sectional structure of a touch panel module 10 using a flexible substrate 171 and a flexible substrate 172 as a pair of substrates. Fig.41 In the touch panel module 10 shown, a part of the display surface can be curved.

[0315] exist Fig.41 In the embodiment, a substrate 171, an adhesive layer 251 and an insulating layer 216 are included instead of the substrate 21. In addition, a substrate 172 is included instead of the substrate 31.

[0316] Conductive layer 221 and insulating layer 211 are provided on one surface of insulating layer 216. Substrate 171 is bonded to the opposite surface of insulating layer 216 via adhesive layer 251.

[0317] A flexible material may be used for the substrate 171 and the substrate 172. In addition, the substrate 171 and the substrate 172 may be used as a protective layer for protecting the surface of the touch panel module 10. The substrate 171 and the substrate 172 may not have the function of supporting each transistor, light emitting element, or wiring.

[0318] The insulating layer 216 preferably has a function of suppressing diffusion of impurities such as water and hydrogen.

[0319] also, Fig.41An example is shown in which the insulating layer 217 is provided so as to cover the common electrode 103. The insulating layer 217 has a function of suppressing diffusion of impurities such as water into the common electrode 103, the EL layer 102, and the like.

[0320] In particular, Fig.41 As shown, the common electrode 103 preferably covers an end portion of the EL layer 102, and the insulating layer 217 covers an end portion of the common electrode 103. Thus, diffusion of impurities into the common electrode 103 or the EL layer 102 can be more effectively suppressed.

[0321] exist Fig.41 In the touch panel module 10 shown, each transistor and the light emitting element 40 are sandwiched by the insulating layer 216 and the insulating layer 217. Therefore, even if a material that easily diffuses impurities such as water or hydrogen is used as the substrate 171, the substrate 172, the adhesive layer 251, the adhesive layer 141, etc., the diffusion of these impurities can be suppressed by the insulating layer 216 or the insulating layer 217 located on the inner side thereof (on the side of each transistor or the light emitting element 40), so that the reliability can be improved.

[0322] Fig.42 An example is shown in which a top emission type light emitting element is used as the light emitting element 40. Fig.42 In the embodiment, the insulating layer 218, the adhesive layer 252 and the substrate 172 are replaced Fig.40 The substrate 31 is provided. In addition, the substrate 21 is replaced by a substrate 171, an adhesive layer 251 and an insulating layer 216.

[0323] The coloring layer 131, the light shielding layer 132, the spacer 124, and the like are provided on one surface of the insulating layer 218. In addition, the substrate 172 is bonded to the other surface of the insulating layer 218 via an adhesive layer 252.

[0324] As with the insulating layer 216 , the insulating layer 218 is preferably made of a material that does not easily diffuse impurities such as water.

[0325] In this way, by sandwiching the light emitting element 40 and each transistor between the insulating layer 216 and the insulating layer 217 serving as a barrier layer, a touch panel module 10 with high reliability can be realized.

[0326] The above is the description of the modified examples.

[0327] [Manufacturing method example] Here, a method for manufacturing a flexible touch panel is described.

[0328] Here, for convenience, a structure including pixels or circuits, a structure including optical components such as color filters, a structure including electrodes or wirings constituting a touch sensor, etc. are referred to as an element layer. The element layer includes, for example, a display element, and may also include wirings electrically connected to the display element, transistors for pixels or circuits, and other elements.

[0329] Here, a support having an insulating surface on which an element layer is formed (for example, Fig.41 , Fig.42 The substrate 171 or substrate 172) in the figure is called a substrate.

[0330] As a method for forming an element layer on a substrate having a flexible insulating surface, there are the following methods: a method of directly forming the element layer on the substrate, a method of forming the element layer on a supporting substrate different from the substrate, and then peeling off the element layer and the supporting substrate to transfer the element layer to the substrate.

[0331] When the material constituting the substrate is heat-resistant to heating in the process of forming the element layer, it is preferred to form the element layer directly on the substrate because the process can be simplified. In this case, it is preferred to form the element layer with the substrate fixed to a supporting base because it can facilitate transportation within the device and between devices.

[0332] In addition, when a method is adopted in which the element layer is formed on a supporting substrate and then transferred to a substrate, a peeling layer and an insulating layer are first stacked on the supporting substrate, and the element layer is formed on the insulating layer. Next, the element layer is peeled off from the supporting substrate and transferred to the substrate. At this time, a material that peels off at the interface between the supporting substrate material and the peeling layer, at the interface between the peeling layer and the insulating layer, or in the peeling layer can be selected.

[0333] For example, it is preferable to use a laminate of a layer containing a high melting point metal material such as tungsten and a layer containing an oxide of the metal material as the peeling layer, and to use a laminate of a plurality of silicon nitride layers, silicon oxynitride layers, silicon nitride oxide layers, etc. as the insulating layer on the peeling layer. When a high melting point metal material is used, the degree of freedom in the formation process of the element layer can be increased, so it is preferable.

[0334] The peeling can be performed by applying mechanical force, etching the peeling layer, or dripping a liquid onto a portion of the peeling interface and allowing the liquid to penetrate the entire peeling interface, etc. Alternatively, the peeling can be performed by heating the peeling interface using the difference in thermal expansion coefficient.

[0335] In addition, when it is possible to peel off at the interface between the supporting substrate and the insulating layer, the peeling layer may not be provided. For example, glass may be used as the supporting substrate, and an organic resin such as polyimide may be used as the insulating layer. At this time, a part of the organic resin may be locally heated by using a laser, etc., or a part of the organic resin may be physically cut off or pierced by using a sharp member, etc. to form a starting point for peeling off, thereby peeling off at the interface between the glass and the insulating layer. Alternatively, a metal layer may be provided between the supporting substrate and the insulating layer composed of the organic resin, and the metal layer may be heated by passing an electric current through the metal layer, thereby peeling off at the interface between the metal layer and the insulating layer. Alternatively, a layer of a material (metal, semiconductor, insulator, etc.) that absorbs light may be provided between the supporting substrate and the insulating layer composed of the organic resin, and the layer may be locally heated by irradiating light such as a laser, thereby forming a starting point for peeling off. In the method shown here, the insulating layer composed of the organic resin may be used as a substrate.

[0336] For example, in Fig.41 In the structure, after the first peeling layer and the insulating layer 216 are sequentially formed on the first supporting substrate, the structure above these layers is formed. Next, the first supporting substrate and the substrate 172 are bonded together by the adhesive layer 141. Then, the first supporting substrate and the first peeling layer are removed by peeling at the interface between the first peeling layer and the insulating layer 216, and the insulating layer 216 and the substrate 171 are bonded together by the adhesive layer 251.

[0337] In addition, for example in Fig.42 In the structure, after the first peeling layer and the insulating layer 216 are formed in sequence on the first supporting substrate, a structure above these layers is formed. In addition, after the second peeling layer and the insulating layer 218 are formed in sequence on the second supporting substrate, a structure above these layers is formed. Next, the first supporting substrate and the second supporting substrate are bonded together by the adhesive layer 141. Then, the second supporting substrate and the second peeling layer are removed by peeling at the interface between the second peeling layer and the insulating layer 218, and the insulating layer 218 is bonded to the substrate 172 using the adhesive layer 252. In addition, the first supporting substrate and the first peeling layer are removed by peeling at the interface between the first peeling layer and the insulating layer 216, and the insulating layer 216 is bonded to the substrate 171 using the adhesive layer 251. Note that peeling and bonding can be started from either side.

[0338] The above is the description of the method for manufacturing a flexible touch panel.

[0339] [Each component] Next, the above-mentioned components are described.

[0340] [Substrate] The substrate included in the touch panel can use a material having a flat surface. As the substrate on the side that extracts light from the display element, a material that allows the light to pass through is used. For example, materials such as glass, quartz, ceramics, sapphire, and organic resin can be used.

[0341] By using a thin substrate, the touch panel can be made lighter and thinner. Furthermore, by using a substrate having a thickness that allows flexibility, a flexible touch panel can be realized.

[0342] As the glass, for example, alkali-free glass, barium borosilicate glass, aluminoborosilicate glass, or the like can be used.

[0343] As the substrate on the side where the light is not extracted, it is also possible to have no light transmittance, so in addition to the substrates listed above, a metal substrate can also be used. Since metal materials and alloy materials have high thermal conductivity and are easy to conduct heat to the entire substrate, they can suppress the local temperature rise of the touch screen, so they are preferred. In order to obtain flexibility or bendability, the thickness of the metal substrate is preferably set to be greater than 10μm and less than 200μm, and more preferably greater than 20μm and less than 50μm.

[0344] The material constituting the metal substrate is not particularly limited, and for example, metals such as aluminum, copper, and nickel, and alloys of metals such as aluminum alloys and stainless steel are preferably used.

[0345] Alternatively, a substrate that has been subjected to an insulating treatment such as oxidation of the surface of a metal substrate or formation of an insulating film on the surface may be used. For example, the insulating film may be formed by a coating method such as a spin coating method or a dipping method, an electrodeposition method, a vapor deposition method, or a sputtering method, or an oxide film may be formed on the surface of the substrate by placing or heating in an oxygen atmosphere or by an anodic oxidation method.

[0346] As the material having flexibility and transparency to visible light, for example, the following materials can be cited: glass having a thickness that allows it to be flexible, polyester resins such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, polyether sulfone (PES) resins, polyamide resins, cycloolefin resins, polystyrene resins, polyamide-imide resins, polyvinyl chloride resins, or polytetrafluoroethylene (PTFE) resins. It is particularly preferred to use a material with a low thermal expansion coefficient, for example, a thermal expansion coefficient of 30×10 -6 / K or less polyamide-imide resin, polyimide resin and PET, etc. In addition, a substrate in which a resin is impregnated in a fiber body (also called a prepreg) or a substrate in which an inorganic filler is mixed into an organic resin to reduce the thermal expansion coefficient can also be used. Since the weight of a substrate using such a material is light, a touch panel using the substrate can also be lightweight.

[0347] When the above-mentioned material contains a fiber body, a high-strength fiber of an organic compound or an inorganic compound is used as the fiber body. Specifically, the high-strength fiber refers to a fiber with a high tensile elastic modulus or Young's modulus. Typical examples thereof are polyvinyl alcohol fibers, polyester fibers, polyamide fibers, polyethylene fibers, aromatic polyamide fibers, polyparaphenylene benzobisoxazole fibers, glass fibers or carbon fibers. As glass fibers, glass fibers using E glass, S glass, D glass, Q glass, etc. can be cited. The above-mentioned fiber body is used in the state of a woven cloth or a non-woven fabric, and a structure formed by impregnating the fiber body with a resin and curing the resin can also be used as a flexible substrate. By using a structure composed of a fiber body and a resin as a flexible substrate, the reliability of resistance to breakage caused by bending or local extrusion can be improved, so it is preferred.

[0348] A hard coating layer (e.g., a silicon nitride layer, etc.) that protects the surface of the touch panel from damage, a layer of a material that can disperse the pressing force (e.g., an aramid resin layer, etc.), etc. may also be laminated on a flexible substrate. In addition, in order to suppress moisture, etc., which may reduce the service life of the display element, an insulating film with low water permeability may also be laminated on a flexible substrate. For example, inorganic insulating materials such as silicon nitride, silicon oxynitride, aluminum oxide, and aluminum nitride may be used.

[0349] As the substrate, a substrate having multiple layers stacked may be used. In particular, by adopting a structure having a glass layer, the barrier property against water or oxygen can be improved to provide a touch panel with high reliability. Alternatively, glass or metal thin enough to be flexible may be used for the substrate. Alternatively, a composite material of laminated glass and resin material may be used.

[0350] For example, a substrate having a glass layer, an adhesive layer and an organic resin layer stacked from the side close to the display element can be used. The thickness of the glass layer is set to be greater than 20 μm and less than 200 μm, preferably greater than 25 μm and less than 100 μm. A glass layer of this thickness can simultaneously achieve high barrier properties and flexibility to water or oxygen. In addition, the thickness of the organic resin layer is set to be greater than 10 μm and less than 200 μm, preferably greater than 20 μm and less than 50 μm. By providing such an organic resin layer, the mechanical strength can be improved by suppressing the cracking or cracking of the glass layer. By applying such a composite material of a glass material and an organic resin to a substrate, a highly reliable flexible touch panel can be achieved.

[0351] [transistor] The transistor includes: a conductive layer used as a gate electrode; a semiconductor layer; a conductive layer used as a source electrode; a conductive layer used as a drain electrode; and an insulating layer used as a gate insulating layer. The above shows the case of using a bottom-gate structure transistor.

[0352] Note that there is no particular limitation on the structure of the transistor included in the touch panel of one embodiment of the present invention. For example, a planar transistor, a staggered transistor, or an inversely staggered transistor may be used. In addition, a top-gate or bottom-gate transistor structure may be used. Alternatively, gate electrodes may be provided above and below the channel.

[0353] There is no particular restriction on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor or a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part thereof) can be used. When a crystalline semiconductor is used, it is preferred because it can suppress the degradation of the characteristics of the transistor.

[0354] In addition, as a semiconductor material used for a transistor, for example, a Group 14 element (silicon, germanium, etc.), a compound semiconductor, or an oxide semiconductor can be used for a semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or an oxide semiconductor containing indium can be used.

[0355] In particular, it is preferable to use an oxide semiconductor whose band gap is wider than that of silicon. By using a semiconductor material whose band gap is wider than that of silicon and whose carrier density is lower than that of silicon, the off-state current of the transistor can be reduced, so it is preferable.

[0356] As the semiconductor layer, it is particularly preferred to use an oxide semiconductor having a plurality of crystal parts, the c-axis of which is oriented in a direction substantially perpendicular to the surface on which the semiconductor layer is formed or the top surface of the semiconductor layer, and no grain boundary can be confirmed between adjacent crystal parts. This oxide semiconductor is also called CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor or C-Axis Aligned and AB-plane Anchored Crystalline Oxide Semiconductor).

[0357] Since such an oxide semiconductor has no grain boundaries, cracks in the oxide semiconductor film due to stress when the display panel is bent can be suppressed. Therefore, such an oxide semiconductor can be applied to a flexible touch panel that is bent and used.

[0358] In addition, by using such a crystalline oxide semiconductor as a semiconductor layer, a transistor with highly reliable electrical characteristics with suppressed variation can be realized.

[0359] In addition, a transistor using an oxide semiconductor whose band gap is wider than that of silicon can maintain the charge stored in a capacitor connected in series with the transistor for a long period of time due to its low off-state current. By using such a transistor in a pixel, the driving circuit can be stopped while maintaining the grayscale of each pixel. As a result, a display device with extremely low power consumption can be realized.

[0360] For example, the semiconductor layer preferably includes a film represented by In-M-Zn oxide containing at least indium, zinc and M (aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium or hafnium). In addition, in order to reduce the unevenness of the electrical characteristics of the transistor using the oxide semiconductor, in addition to the above elements, it is preferred to further include a stabilizer.

[0361] As the stabilizer, there can be mentioned the metals represented as M above, such as gallium, tin, hafnium, aluminum or zirconium. In addition, as other stabilizers, there can be mentioned lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium and the like of the lanthanide elements.

[0362] As the oxide semiconductor constituting the semiconductor layer, for example, In-Ga-Zn oxides, In-Al-Zn oxides, In-Sn-Zn oxides, In-Hf-Zn oxides, In-La-Zn oxides, In-Ce-Zn oxides, In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides can be used. Materials, In-Dy-Zn type oxides, In-Ho-Zn type oxides, In-Er-Zn type oxides, In-Tm-Zn type oxides, In-Yb-Zn type oxides, In-Lu-Zn ​​type oxides, In-Sn-Ga-Zn type oxides, In-Hf-Ga-Zn type oxides, In-Al-Ga-Zn type oxides, In-Sn-Al-Zn type oxides, In-Sn-Hf-Zn type oxides, In-Hf-Al-Zn type oxides.

[0363] Note that, here, the In-Ga-Zn-based oxide refers to an oxide having In, Ga, and Zn as main components, and there is no limitation on the ratio of In, Ga, and Zn. In addition, a metal element other than In, Ga, and Zn may be contained.

[0364] In addition, the semiconductor layer and the conductive layer may also have the same metal element in the above-mentioned oxide. By making the semiconductor layer and the conductive layer have the same metal element, the manufacturing cost can be reduced. For example, by using a metal oxide target composed of the same metal, the manufacturing cost can be reduced. In addition, the etching gas or etching liquid when the semiconductor layer and the conductive layer are processed can also be used together. However, even if the semiconductor layer and the conductive layer have the same metal element, sometimes their compositions are different from each other. For example, in the manufacturing process of transistors and capacitors, sometimes the metal elements in the film are separated and become different metal compositions.

[0365] In addition, when the semiconductor layer is In-M-Zn oxide, as the atomic number percentage of In and M excluding Zn and O, when the sum of In and M is set to 100 atomic%, it is preferred that In is higher than 25 atomic% and M is lower than 75 atomic%, and it is more preferred that In is higher than 34 atomic% and M is lower than 66 atomic%.

[0366] The energy gap of the semiconductor layer is 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more. Thus, by using an oxide semiconductor with a wide energy gap, the off-state current of the transistor can be reduced.

[0367] The thickness of the semiconductor layer is greater than or equal to 3 nm and less than or equal to 200 nm, preferably greater than or equal to 3 nm and less than or equal to 100 nm, and more preferably greater than or equal to 3 nm and less than or equal to 50 nm.

[0368] When the semiconductor layer is an In-M-Zn oxide, the metal elements of the sputtering target used to form the In-M-Zn oxide film preferably satisfy In≥M and Zn≥M. The atomic ratio of the metal elements of such a sputtering target is preferably In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, etc. Note that the atomic ratio of the formed semiconductor layer includes an error within the range of ±40% of the atomic ratio of the metal elements in the above-mentioned sputtering target.

[0369] As the semiconductor layer, an oxide semiconductor film with a low carrier density can be used. For example, an oxide semiconductor film with a carrier density of 1×10 17 Pieces / cm 3 Below, preferably 1×10 15 Pieces / cm 3 Below, more preferably 1×10 13 Pieces / cm 3 Below, more preferably 1×10 11 Pieces / cm 3The oxide semiconductor film described below is referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. Therefore, since the impurity concentration and defect level density are low, it can be said that the oxide semiconductor has stable characteristics.

[0370] Note that the present invention is not limited to the above description, and a material having an appropriate composition can be used according to the desired semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, etc.) of the transistor. In addition, it is preferred to appropriately set the carrier density, impurity concentration, defect density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. of the semiconductor layer to obtain the desired semiconductor characteristics of the transistor.

[0371] In addition, when the semiconductor layer contains silicon or carbon, which is one of the elements of Group 14, oxygen defects in the semiconductor layer increase, which makes the semiconductor layer n-type. Therefore, the concentration of silicon or carbon in the semiconductor layer (the concentration measured by secondary ion mass spectrometry) is set to 2×10 18 atoms / cm 3 Below, preferably 2×10 17 atoms / cm 3 the following.

[0372] In addition, when an alkali metal or alkaline earth metal is bonded to an oxide semiconductor, carriers are generated, which increases the off-state current of the transistor. Therefore, the concentration of the alkali metal or alkaline earth metal in the semiconductor layer measured by secondary ion mass spectrometry is set to 1×10 18 atoms / cm 3 Below, preferably 2×10 16 atoms / cm 3 the following.

[0373] In addition, when the semiconductor layer contains nitrogen, electrons are generated as carriers, the carrier density increases, and the n-type is easily converted. As a result, a transistor using an oxide semiconductor containing nitrogen is easily converted into a normally-on characteristic. For example, the nitrogen concentration measured by secondary ion mass spectrometry is preferably 5×10 18 atoms / cm 3 the following.

[0374] In addition, the semiconductor layer may also have a non-single-crystal structure, for example. The non-single-crystal structure includes, for example, CAAC-OS, a polycrystalline structure, a microcrystalline structure, or an amorphous structure. Among the non-single-crystal structures, the amorphous structure has the highest defect state density, while the CAAC-OS has the lowest defect state density.

[0375] The semiconductor layer may have an amorphous structure, for example. An oxide semiconductor film having an amorphous structure has, for example, a disordered atomic arrangement and no crystalline component. Alternatively, an oxide film having an amorphous structure has, for example, a completely amorphous structure and no crystalline part.

[0376] In addition, the semiconductor layer may be a mixed film having two or more of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAAC-OS region, and a single crystal structure region. The mixed film may have a single layer structure or a stacked layer structure including two or more of the above regions.

[0377] Alternatively, silicon is preferably used for a semiconductor having a channel formed in a transistor. Amorphous silicon can be used as silicon, and crystalline silicon is particularly preferably used. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. are preferably used. In particular, polycrystalline silicon can be formed at a low temperature compared to single crystal silicon, and its field effect mobility is higher than that of amorphous silicon, so polycrystalline silicon has high reliability. By using such a polycrystalline semiconductor for a pixel, the aperture ratio of the pixel can be increased. In addition, even in the case of an extremely high resolution display panel, the gate drive circuit and the source drive circuit can be formed on the same substrate as the pixel, thereby reducing the number of components constituting the electronic device.

[0378] The bottom-gate transistor illustrated in this embodiment is preferred because it can reduce the manufacturing process. In addition, by using amorphous silicon, it can be formed at a lower temperature than polycrystalline silicon. Therefore, as the wiring or electrode material and substrate material under the semiconductor layer, a material with low heat resistance can be used, thereby expanding the range of material selection. For example, a glass substrate with a very large area can be used appropriately. On the other hand, the top-gate transistor shown in this embodiment is easy to form an impurity region in a self-aligned manner, thereby reducing the unevenness of characteristics, etc., so it is preferred. At this time, it is particularly preferred to use polycrystalline silicon or single crystal silicon.

[0379] [Conductive layer] As materials that can be used for the gate, source and drain of the transistor and various wirings and electrodes constituting the touch panel, conductive layers such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum or tungsten or alloys with the above metals as the main components can be cited. In addition, films containing these materials can be used in a single layer or laminated structure. For example, a single layer structure of an aluminum film containing silicon, a two-layer structure of an aluminum film stacked on a titanium film, a two-layer structure of an aluminum film stacked on a tungsten film, a two-layer structure of a copper film stacked on a copper-magnesium-aluminum alloy film, a two-layer structure of a copper film stacked on a titanium film, a two-layer structure of a copper film stacked on a tungsten film, a three-layer structure of a titanium film or a titanium nitride film, an aluminum film or a copper film, and a titanium film or a titanium nitride film, and a three-layer structure of a molybdenum film or a molybdenum nitride film, an aluminum film or a copper film, and a molybdenum film or a molybdenum nitride film can be cited. In addition, a transparent conductive material containing indium oxide, tin oxide or zinc oxide can be used. In addition, the use of copper containing manganese is preferred because the controllability of the shape during etching can be improved.

[0380] In addition, as a light-transmitting conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide doped with gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium or titanium, and alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal material (for example, titanium nitride) and the like can also be used. In addition, when using a metal material or an alloy material (or their nitrides), it is formed so thin that it is light-transmitting. In addition, a laminated film of the above-mentioned material can be used as a conductive layer. For example, by using a laminated film of an alloy of silver and magnesium and indium tin oxide, the conductivity can be improved, so it is preferred. The above-mentioned materials can also be used for conductive layers constituting various wirings and electrodes of a touch panel, and electrodes (pixel electrodes and common electrodes, etc.) included in a display element.

[0381] [Insulation layer] As insulating materials that can be used for each insulating layer, protective layer, spacer, etc., for example, resins such as acrylic resins and epoxy resins, resins having siloxane bonds, inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, or aluminum oxide can be used.

[0382] In addition, the light emitting element is preferably provided between a pair of insulating films having low water permeability, thereby preventing impurities such as water from entering the light emitting element and preventing a decrease in the reliability of the device.

[0383] Examples of insulating films with low water permeability include films containing nitrogen and silicon, such as silicon nitride films and silicon nitride oxide films, and films containing nitrogen and aluminum, such as aluminum nitride films. In addition, silicon oxide films, silicon oxynitride films, and aluminum oxide films may also be used.

[0384] For example, the water vapor permeability of an insulating film with low water permeability is set to 1×10 -5 [g / (m 2 ·day)] or less, preferably 1×10 -6 [g / (m 2 ·day)] or less, more preferably 1×10 -7 [g / (m 2 ·day)] or less, more preferably 1×10 -8 [g / (m 2 ·day)] or less.

[0385] [Light-emitting element] As the light emitting element, an element capable of self-luminescence can be used, and its category includes an element whose brightness is controlled by current or voltage. For example, a light emitting diode (LED), an organic EL element, an inorganic EL element, etc. can be used.

[0386] The light-emitting element may adopt a top emission structure, a bottom emission structure or a double-sided emission structure. A conductive film that allows visible light to pass is used as the electrode on the light extraction side. In addition, a conductive film that reflects visible light is preferably used as the electrode on the side that does not extract light.

[0387] The EL layer includes at least a light-emitting layer. As a layer other than the light-emitting layer, the EL layer may also include a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and hole transport property).

[0388] The EL layer may be made of a low molecular weight compound or a high molecular weight compound, and may also contain an inorganic compound. The layers constituting the EL layer may be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet, or coating.

[0389] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and the anode, holes are injected into the EL layer from the anode side, and electrons are injected into the EL layer from the cathode side. The injected electrons and holes recombine in the EL layer, whereby the light-emitting substance contained in the EL layer emits light.

[0390] When a white-light-emitting element is used as a light-emitting element, it is preferred that the EL layer contain two or more light-emitting substances. For example, by selecting a light-emitting substance in such a way that the light emitted by each of the two or more light-emitting substances becomes a complementary color relationship, white light emission can be obtained. For example, it is preferred to include two or more of the following light-emitting substances: a light-emitting substance that emits light of R (red), G (green), B (blue), Y (yellow), O (orange), etc., and a light-emitting substance that emits light with spectral components of two or more colors including R, G, and B. In addition, it is preferred to use a light-emitting element in which the spectrum of the light emitted from the light-emitting element has two or more peaks in the range of wavelengths in the visible light region (for example, 350nm to 750nm). In addition, the emission spectrum of a material having a peak in the yellow wavelength range is preferably a material having spectral components in the green and red wavelength ranges.

[0391] More preferably, the EL layer preferably adopts a stacked structure, which includes a light-emitting layer containing a light-emitting material that emits light of one color and a light-emitting layer containing a light-emitting material that emits light of another color. For example, multiple light-emitting layers in the EL layer can be stacked in contact with each other, or can be stacked with a region that does not contain any light-emitting material. For example, the following region can be set between the fluorescent light-emitting layer and the phosphorescent light-emitting layer: a region that contains the same material as the fluorescent light-emitting layer or the phosphorescent light-emitting layer (for example, a main material, an auxiliary material) and does not contain any light-emitting material. As a result, the manufacture of the light-emitting element becomes easy, and the driving voltage is reduced.

[0392] The light-emitting element may be a single element including one EL layer or a tandem element in which a plurality of EL layers are stacked with a charge generating layer interposed therebetween.

[0393] As a conductive film that allows visible light to pass through, for example, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide added with gallium, etc. can be used. In addition, it can also be used by forming a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium or titanium, an alloy containing these metal materials, or a nitride of these metal materials (for example, titanium nitride) to be thin enough to be light-transmissive. In addition, a laminated film of the above materials can be used as a conductive layer. For example, when a laminated film of an alloy of silver and magnesium and indium tin oxide is used, the conductivity can be improved, so it is preferred. In addition, graphene, etc. can also be used.

[0394] As a conductive film that reflects visible light, for example, metal materials such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper or palladium or alloys containing these metal materials can be used. In addition, lanthanum, neodymium or germanium can also be added to the above-mentioned metal materials or alloys. In addition, an alloy (aluminum alloy) containing titanium, nickel or neodymium and aluminum can also be used. In addition, an alloy containing copper, palladium or magnesium and silver can also be used. The alloy containing silver and copper has high heat resistance, so it is preferred. In addition, by stacking a metal film or a metal oxide film in contact with an aluminum film or an aluminum alloy film, the oxidation of the aluminum alloy film can be suppressed. As materials for such metal films and metal oxide films, titanium, titanium oxide, etc. can be cited. In addition, the above-mentioned conductive film that allows visible light to pass through and a film composed of a metal material can also be stacked. For example, a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium and indium tin oxide, etc. can be used.

[0395] Each electrode can be formed by a vapor deposition method or a sputtering method, or can also be formed by a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method.

[0396] [Adhesive layer] As each adhesive layer, various curing adhesives such as light curing adhesives such as ultraviolet curing adhesives, reaction curing adhesives, heat curing adhesives, anaerobic adhesives can be used. As these adhesives, epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene-vinyl acetate) resins, etc. can be cited. Especially preferably, materials with low moisture permeability such as epoxy resins are used. In addition, two-liquid mixed resins can also be used. In addition, adhesive sheets, etc. can also be used.

[0397] In addition, the above-mentioned resin may also contain a desiccant. For example, a substance that absorbs moisture by chemical adsorption, such as an oxide of an alkaline earth metal (calcium oxide or barium oxide, etc.) may be used. Alternatively, a substance that absorbs moisture by physical adsorption, such as zeolite or silica gel, may be used. When a desiccant is contained in the resin, it is possible to suppress impurities such as moisture from entering the element, thereby improving the reliability of the display panel, so it is preferred.

[0398] Furthermore, by mixing a filler or a light scattering member having a high refractive index into the above resin, the light extraction efficiency can be improved. For example, titanium oxide, barium oxide, zeolite, zirconium, etc. can be used.

[0399] [Connection Layer] As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conductive Film), anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

[0400] [Coloring layer] As materials that can be used for the coloring layer, metal materials, resin materials, resin materials containing pigments or dyes, etc. can be cited.

[0401] [Light-shielding layer] As materials that can be used for the light-shielding layer, carbon black, metal oxides, or composite oxides of solid solutions containing multiple metal oxides, etc. can be cited. In addition, a laminated film of a film containing the material of the coloring layer can also be used for the light-shielding layer. For example, a laminated structure of a film containing the material of the coloring layer for transmitting light of a certain color and a film containing the material of the coloring layer for transmitting light of other colors can be adopted. By making the materials of the coloring layer and the light-shielding layer the same, not only can the same devices be used, but also the process can be simplified, which is therefore preferable.

[0402] The above is the description of each component.

[0403] At least a part of this embodiment can be implemented in appropriate combination with other embodiments described in this specification.

[0404] Embodiment 2 <Configuration of CAC> Hereinafter, the configuration of CAC (Cloud Aligned Complementary)-OS that can be used in one mode of the present invention will be described.

[0405] CAC refers to, for example, a configuration in which elements contained in an oxide semiconductor are unevenly distributed, and the size of the material containing the unevenly distributed elements is 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less or an approximate size. Note that hereinafter, a state in which one or more metal elements are unevenly distributed in an oxide semiconductor and regions containing the metal elements are mixed in a state of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less or an approximate size will also be referred to as a mosaic or patch state.

[0406] For example, CAC-IGZO in In-Ga-Zn oxide (hereinafter, also referred to as IGZO) refers to a material divided into indium oxide (hereinafter, referred to as InO X1 (X1 is a real number greater than 0)) or indium zinc oxide (hereinafter, referred to as In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0)) and gallium oxide (hereinafter, referred to as GaO X3 (X3 is a real number greater than 0)) or gallium zinc oxide (hereinafter, referred to as Ga X4 ZnY4 O Z4 (X4, Y4 and Z4 are real numbers greater than 0)) etc. to form a mosaic shape, and the mosaic-shaped InO X1 or In X2 Zn Y2 O Z2 A structure uniformly distributed in the film (hereinafter also referred to as a cloud shape).

[0407] In other words, CAC-IGZO is a GaO X3 The area with In as the main component X2 Zn Y2 O Z2 or InO X1 In this specification, for example, when the atomic number ratio of In to element M in the first region is greater than that in the second region, the In concentration in the first region is higher than that in the second region.

[0408] Note that IGZO is a general term and sometimes refers to a compound containing In, Ga, Zn, and O. As a typical example, InGaO 3 (ZnO) m1 (m1 is a natural number) or In (1+x0) Ga (1-x0) O 3 (ZnO) m0 (-1≤x0≤1, m0 is an arbitrary number).

[0409] The crystalline compound has a single crystal structure, a polycrystalline structure or a CAAC structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected in a non-oriented manner on the ab plane.

[0410] On the other hand, CAC is related to the material composition. CAC refers to a composition in which a region where nanoparticles with Ga as the main component are partially observed and a region where nanoparticles with In as the main component are partially observed are irregularly dispersed in a mosaic shape in a material composition containing In, Ga, Zn, and O. Therefore, in the CAC composition, the crystal structure is a secondary factor.

[0411] CAC does not include a stacked structure of two or more films having different compositions, for example, a structure consisting of two layers of a film having In as a main component and a film having Ga as a main component.

[0412] Note that sometimes no GaO X3 The area with In as the main component X2 Zn Y2 O Z2Or InO X1 A clear boundary between regions with the main component

[0413] <Analysis of CAC-IGZO> Next, the results of measuring the oxide semiconductor formed on the substrate using various measurement methods are described.

[0414] <Structure and Manufacturing Method of Samples> Hereinafter, nine samples of one embodiment of the present invention are described. Each sample differs in the substrate temperature and the oxygen gas flow ratio when forming the oxide semiconductor. Each sample includes a substrate and an oxide semiconductor on the substrate.

[0415] The manufacturing method of each sample is described.

[0416] A glass substrate is used as the substrate. An In-Ga-Zn oxide with a thickness of 100 nm is formed as the oxide semiconductor on the glass substrate using a sputtering device. The film formation conditions are as follows: the pressure in the processing chamber is set to 0.6 Pa, and an oxide target (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used as the target. In addition, 2500 W of AC power is supplied to the oxide target provided in the sputtering device.

[0417] Nine samples are manufactured under the following conditions when forming the oxide: the substrate temperature is set to the temperature when no intentional heating is performed (hereinafter, also referred to as R.T.), 130 °C, or 170 °C. In addition, the flow ratio of oxygen gas to the mixed gas of Ar and oxygen (hereinafter, also referred to as the oxygen gas flow ratio) is set to 10%, 30%, or 100%.

[0418] <X-ray Diffraction Analysis> In this section, the results of X-ray diffraction (XRD) measurement of nine samples are described. As the XRD device, D8 ADVANCE manufactured by Bruker is used. The measurement conditions are as follows: θ / 2θ scanning is performed using the Out-of-plane method, the scanning range is from 15 deg. to 50 deg., the step width is 0.02 deg., and the scanning speed is 3.0 deg. / min.

[0419] Fig.55 The results of measuring the XRD spectrum using the Out-of-plane method are shown. In Fig.55In the figure, the top row shows the measurement results of the sample whose substrate temperature during film formation is 170°C, the middle row shows the measurement results of the sample whose substrate temperature during film formation is 130°C, and the bottom row shows the measurement results of the sample whose substrate temperature during film formation is RT. In addition, the leftmost column shows the measurement results of the sample whose oxygen gas flow ratio is 10%, the middle column shows the measurement results of the sample whose oxygen gas flow ratio is 30%, and the rightmost column shows the measurement results of the sample whose oxygen gas flow ratio is 100%.

[0420] exist Fig.55 In the XRD spectrum shown, the higher the substrate temperature during film formation or the higher the oxygen gas flow rate during film formation, the greater the peak intensity near 2θ = 31°. In addition, it is known that the peak near 2θ = 31° originates from a crystalline IGZO compound (also called CAAC (c-axis aligned crystalline)-IGZO) having c-axis orientation in a direction substantially perpendicular to the formed surface or top surface.

[0421] In addition, if Fig.55 As shown in the XRD spectrum, the lower the substrate temperature during film formation or the lower the oxygen gas flow rate, the less obvious the peak. Therefore, it can be seen that in samples with low substrate temperature or low oxygen gas flow rate during film formation, no orientation in the ab plane direction and c axis direction of the measured area can be observed.

[0422] Electron Microscope Analysis This section describes the results of observation and analysis using HAADF-STEM (High-Angle Annular Dark Field Scanning Transmission Electron Microscope) of samples manufactured under the conditions of a substrate temperature of RT and an oxygen gas flow ratio of 10% during film formation (hereinafter, images obtained using HAADF-STEM will also be referred to as TEM images).

[0423] The results of image analysis of a planar image (hereinafter also referred to as a planar TEM image) and a cross-sectional image (hereinafter also referred to as a cross-sectional TEM image) obtained using HAADF-STEM are described. The TEM image was observed using the spherical aberration correction function. When obtaining the HAADF-STEM image, an atomic resolution analysis electron microscope JEM-ARM200F manufactured by JEOL Ltd. was used, the acceleration voltage was set to 200 kV, and an electron beam with a beam diameter of approximately 0.1 nmφ was irradiated.

[0424] Fig.56A This is a planar TEM image of a sample manufactured under the conditions that the substrate temperature during film formation is RT and the oxygen gas flow ratio is 10%. Fig.56BThis is a cross-sectional TEM image of a sample manufactured under the conditions that the substrate temperature during film formation is RT and the oxygen gas flow ratio is 10%.

[0425] 《Analysis of Electron Diffraction Patterns》 This section describes the results of obtaining electron diffraction patterns by irradiating a sample manufactured under the conditions of a substrate temperature of RT and an oxygen gas flow ratio of 10% with an electron beam (also called a nanobeam) having a beam diameter of 1 nm.

[0426] observe Fig.56A The electron diffraction patterns of black dots a1, a2, a3, a4, and a5 in the planar TEM image of the sample produced under the conditions of substrate temperature of RT and oxygen gas flow rate of 10% during film formation are shown. The electron diffraction pattern was observed by irradiating the electron beam at a constant speed for 35 seconds. Fig.56C The result of black point a1 is shown. Fig.56D The result of black point a2 is shown. Fig.56E The result of black point a3 is shown. Fig.56F The result of black point a4 is shown. Figure 56G The result of the black point a5 is shown.

[0427] exist Fig.56C , Fig.56D , Fig.56E , Fig.56F and Figure 56G In the image, a circle-like (ring-shaped) area with high brightness is observed. In addition, a plurality of spots are observed in the ring-shaped area.

[0428] observe Fig.56B The electron diffraction patterns of black dots b1, b2, b3, b4 and b5 in the cross-sectional TEM image of the sample manufactured under the conditions that the substrate temperature during film formation is RT and the oxygen gas flow ratio is 10% are shown. Figure 56H The result of black point b1 is shown. Fig.56I The result of black point b2 is shown. Fig.56J The result of black point b3 is shown. Figure 56K The result of black point b4 is shown. Figure 56L The result of the black point b5 is shown.

[0429] exist Figure 56H , Fig.56I , Fig.56J , Figure 56K and Figure 56L In the image, a ring-shaped area with high brightness was observed. In addition, multiple spots were observed in the ring-shaped area.

[0430] For example, when the InGaZnO 4When the crystalline CAAC-OS is incident with an electron beam with a beam diameter of 300 nm in a direction parallel to the sample surface, a 4 The diffraction pattern of the spot of the (009) plane of the crystal. In other words, CAAC-OS has c-axis orientation, and the c-axis is oriented roughly perpendicular to the formed surface or top surface. On the other hand, when the same sample is incident with an electron beam with a beam diameter of 300nm in a direction perpendicular to the sample surface, a ring-shaped diffraction pattern is confirmed. In other words, CAAC-OS does not have a-axis orientation and b-axis orientation.

[0431] When an electron beam with a large beam diameter (e.g., 50 nm or more) is used to electron diffract a nanocrystalline oxide semiconductor (hereinafter referred to as nc-OS), a diffraction pattern similar to a halo pattern is observed. In addition, when an electron beam with a small beam diameter (e.g., less than 50 nm) is used to perform nanobeam electron diffraction on nc-OS, bright spots (spots) are observed. In addition, in the nanobeam electron diffraction pattern of nc-OS, a high brightness area (annular) such as a circle is sometimes observed. Moreover, multiple bright spots are sometimes observed in the annular area.

[0432] The electron diffraction pattern of the sample manufactured under the conditions of substrate temperature of RT and oxygen gas flow rate of 10% during film formation has a ring-shaped high brightness area and multiple bright spots appear in the ring-shaped area. Therefore, the sample manufactured under the conditions of substrate temperature of RT and oxygen gas flow rate of 10% during film formation presents an electron diffraction pattern similar to nc-OS, and has no orientation in the plane direction and cross-sectional direction.

[0433] As described above, the properties of an oxide semiconductor film formed at a low substrate temperature or at a low oxygen gas flow ratio are significantly different from those of an oxide semiconductor film having an amorphous structure and an oxide semiconductor film having a single crystal structure.

[0434] 《Elemental Analysis》 This section describes the results of elemental analysis of a sample produced under the conditions of substrate temperature of RT and oxygen gas flow rate of 10% during film formation by obtaining and evaluating an EDX surface analysis image using energy dispersive X-ray spectroscopy (EDX). In the EDX measurement, an energy dispersive X-ray analyzer JED-2300T manufactured by JEOL Ltd. was used as an elemental analyzer. A silicon drift detector was used to detect X-rays emitted from the sample.

[0435] In the EDX measurement, an electron beam is irradiated to each point in the analysis target area of ​​the sample, and the energy and the number of occurrences of the characteristic X-rays of the sample generated at this time are measured to obtain an EDX spectrum corresponding to each point. In the present embodiment, the peak of the EDX spectrum of each point is attributed to the electron transition to the L shell in the In atom, the electron transition to the K shell in the Ga atom, the electron transition to the K shell in the Zn atom, and the electron transition to the K shell in the O atom, and the ratio of each atom at each point is calculated. By performing the above steps in the analysis target area of ​​the sample, an EDX surface analysis image showing the ratio distribution of each atom can be obtained.

[0436] FIG. 57A to FIG. 57C An EDX surface analysis image of a cross section of a sample produced under the conditions that the substrate temperature during film formation is RT and the oxygen gas flow ratio is 10%. Fig.57A An EDX surface analysis image of Ga atoms is shown (the ratio of Ga atoms to all atoms is 1.18 to 18.64 [atomic %]). Fig.57B An EDX surface analysis image of In atoms is shown (the ratio of In atoms to all atoms is 9.28 to 33.74 [atomic %]). Fig.57C The EDX surface analysis image of Zn atoms is shown (the ratio of Zn atoms to all atoms is 6.69 to 24.99 [atomic %]). Fig.57A , Fig.57B and Fig.57C The same region in the cross section of a sample manufactured under the conditions of substrate temperature of RT and oxygen gas flow rate of 10% during film formation is shown. In the EDX surface analysis image, the ratio of elements is represented by light and dark: the more the measured element in the region, the brighter the region, and the fewer the measured element, the darker the region. The magnification of the EDX surface analysis image shown in FIG57 is 7.2 million times.

[0437] exist Fig.57A , Fig.57B and Fig.57C In the EDX surface analysis image shown, the relative distribution of light and dark is confirmed, and the distribution of each atom is confirmed in the sample produced under the conditions of substrate temperature of RT and oxygen gas flow rate of 10% during film formation. Fig.57A , Fig.57B and Fig.57C Shown are an area surrounded by a solid line and an area surrounded by a dotted line.

[0438] exist Fig.57A In the figure, the area surrounded by the solid line is relatively darker than the area surrounded by the dotted line, and the area surrounded by the dotted line is relatively brighter than the area surrounded by the solid line. Fig.57BIn the figure, there are more relatively bright areas in the area surrounded by solid lines, and there are more relatively dark areas in the area surrounded by dotted lines.

[0439] In other words, the area surrounded by the solid line is a region with relatively more In atoms, and the area surrounded by the dotted line is a region with relatively fewer In atoms. Fig.57C In the area surrounded by the solid line, the right side is a relatively bright area, and the left side is a relatively dark area. X2 Zn Y2 O Z2 or InO X1 etc. are the main components of the area.

[0440] In addition, the area surrounded by the solid line is a region with relatively few Ga atoms, and the area surrounded by the dotted line is a region with relatively more Ga atoms. Fig.57C In the figure, in the area surrounded by the dotted line, the upper left area is a relatively bright area, and the lower right area is a relatively dark area. Therefore, the area surrounded by the dotted line is GaO X3 or Ga X4 Zn Y4 O Z4 etc. are the main components of the area.

[0441] like Fig.57A , Fig.57B and Fig.57C As shown in Figure 2, the distribution of In atoms is more uniform than that of Ga atoms, with InO X1 The area with the main component looks like the In X2 Zn Y2 O Z2 In this way, the regions with In as the main component are connected to each other. X2 Zn Y2 O Z2 or InO X1 The area with argon as the main component spreads out in a cloud shape.

[0442] In this way, the GaO X3 The area with In as the main component X2 Zn Y2 O Z2 or InO X1 An In—Ga—Zn oxide having a structure in which main components are mixed and distributed unevenly in different regions is called CAC-IGZO.

[0443] The crystal structure of CAC has an nc structure. In the electron diffraction pattern of CAC having an nc structure, in addition to the bright spots (spots) caused by IGZO containing a single crystal, polycrystalline or CAAC structure, multiple bright spots (spots) appear. Alternatively, the crystal structure is defined as a ring-shaped high brightness area in addition to the multiple bright spots (spots).

[0444] In addition, if Fig.57A , Fig.57B and Fig.57C As shown, GaO X3 The area with In as the main component X2 Zn Y2 O Z2 or InO X1 The size of the region containing the metal element as the main component is 0.5 nm to 10 nm or 1 nm to 3 nm. In the EDX surface analysis image, the diameter of the region containing each metal element as the main component is preferably 1 nm to 2 nm.

[0445] As described above, the structure of CAC-IGZO is different from that of IGZO compounds in which metal elements are uniformly distributed, and it has different properties from those of IGZO compounds. X3 The area with In as the main component X2 Zn Y2 O Z2 or InO X1 Therefore, when CAC-IGZO is used in semiconductor devices, the GaO-based regions are separated from each other and the regions with each element as the main component are in a mosaic-like structure. X3 The nature and causes of In X2 Zn Y2 O Z2 or InO X1 The complementary effects of the properties of on ) and high field effect mobility (μ).

[0446] In addition, semiconductor elements using CAC-IGZO have high reliability. Therefore, CAC-IGZO is suitable for various semiconductor devices such as displays.

[0447] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0448] Implementation 3 In this embodiment, an example of a method of driving an input device (touch sensor) that can be used in a touch panel module which is one embodiment of the present invention will be described.

[0449] Fig.43A is a block diagram showing the structure of a mutual capacitance touch sensor. Fig.43A In FIG. 6 , a pulse voltage output circuit 601 and a current detection circuit 602 are shown. Fig.43A In FIG. 6 , six wirings X1 to X6 represent electrodes 621 to which pulses are applied, and six wirings Y1 to Y6 represent electrodes 622 to which current changes are sensed. Note that the number of electrodes is not limited to this. Fig.43A The capacitor 603 is shown in the figure, which is formed by overlapping the electrode 621 and the electrode 622 or by arranging the electrode 621 and the electrode 622 in close proximity. Note that the functions of the electrode 621 and the electrode 622 may be interchanged.

[0450] For example, the wiring 23 illustrated in Embodiment 1 corresponds to one of the electrode 621 and the electrode 622 , and the wiring 24 corresponds to the other of the electrode 621 and the electrode 622 .

[0451] The pulse voltage output circuit 601 is, for example, a circuit for sequentially inputting a pulse voltage to the wirings X1 to X6. The current detection circuit 602 is, for example, a circuit for detecting a current flowing through each of the wirings Y1 to Y6.

[0452] By applying a pulse voltage to one of the wirings X1 to X6, an electric field is generated between the electrode 621 and the electrode 622 forming the capacitor 603, and thus a current flows through the electrode 622. A portion of the electric field generated between the electrodes is shielded by the proximity or contact of a sensing object such as a finger or a stylus pen, and thus the strength of the electric field generated between the electrodes changes. As a result, the magnitude of the current flowing through the electrode 622 changes.

[0453] For example, when there is no approach or contact of the sensing object, the magnitude of the current flowing through the wiring Y1-Y6 becomes a value corresponding to the magnitude of the capacitor 603. On the other hand, when a part of the electric field is shielded due to the approach or contact of the sensing object, a change in the magnitude of the current flowing through the wiring Y1-Y6 is detected. This phenomenon can be used to detect the approach or contact of the sensing object.

[0454] In addition, the current detection circuit 602 may also detect the (time) integral value of the current flowing through a wiring. In this case, for example, an integration circuit may be used for detection. Alternatively, the peak value of the current may be detected. In this case, for example, the current may be converted into a voltage and the peak value of the voltage value may be detected.

[0455] Fig.43B Show Fig.43A An example of a timing diagram of input / output waveforms in a mutual capacitance touch sensor is shown in FIG. Fig.43BIn one sensing period, each row and column is detected. Fig.43B In FIG. 1 , two cases are shown: a case where contact or proximity of the sensing object is not detected (when not touched) and a case where contact or proximity of the sensing object is detected (when touched). Here, for wirings Y1 to Y6 , voltage waveforms corresponding to the magnitude of the detected current are shown.

[0456] like Fig.43B As shown in FIG. 1 , a pulse voltage is sequentially applied to the wirings X1-X6. Accordingly, a current flows through the wirings Y1-Y6. When not touched, the same current flows through the wirings Y1-Y6 according to the change in the voltage of the wirings X1-X6, so the output waveform of each of the wirings Y1-Y6 is the same. On the other hand, when touched, the current flowing through the wirings Y1-Y6 located in the part where the sensing object touches or approaches is reduced, so as shown in FIG. Fig.43B As shown, the output waveform changes.

[0457] exist Fig.43B , a case where the sensing object contacts or approaches the intersection of the wiring X3 and the wiring Y3 or the vicinity thereof is illustrated.

[0458] Thus, in the mutual capacitance type, by detecting the current change caused by the shielding of the electric field generated between a pair of electrodes, the position information of the sensing object can be obtained. In addition, when the detection sensitivity is high, even if the sensing object is far away from the sensing surface (for example, the surface of the touch panel), its coordinates can be detected.

[0459] In addition, in a touch panel, the detection sensitivity of the touch sensor can be improved by using a driving method that staggers the display period of the display unit and the sensing period of the touch sensor. For example, the display period and the sensing period can be performed respectively during a frame period of the display. In this case, it is preferred to set two or more sensing periods in one frame period. By increasing the sensing frequency, the detection sensitivity can be further improved.

[0460] The pulse voltage output circuit 601 and the current detection circuit 602 are preferably formed in one IC chip, for example. The IC is preferably installed in a substrate in a touch panel or a frame of an electronic device, for example. When a flexible touch panel is used, since the parasitic capacitance at the bent portion thereof increases, there is a concern that the influence of noise becomes greater, so it is preferable to use an IC that uses a driving method that is not easily affected by noise. For example, it is preferable to use an IC that uses a driving method that improves the signal-to-noise ratio (S / N ratio).

[0461] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0462] Implementation 4 In this embodiment, an example of a transistor that can replace the transistor 70, the transistor 70a, the transistor 70b, the transistor 201, the transistor 202, and the like described in the above embodiment will be described with reference to the drawings.

[0463] The touch panel module 10 according to one embodiment of the present invention can be manufactured using various transistor types such as bottom-gate transistors and top-gate transistors, so that the semiconductor layer material or transistor structure used can be easily replaced in accordance with an existing production line.

[0464] [Bottom-gate transistor] Figure 44A1 8 is a cross-sectional view of a channel protection transistor 810 which is a type of bottom-gate transistor. Figure 44A1 In the embodiment, the transistor 810 is formed on a substrate 771. In addition, the transistor 810 includes an electrode 746 on the substrate 771 via an insulating layer 772. In addition, the semiconductor layer 742 is included on the electrode 746 via an insulating layer 726. The electrode 746 can be used as a gate electrode. The insulating layer 726 can be used as a gate insulating layer.

[0465] In addition, an insulating layer 741 is included on the channel formation region of the semiconductor layer 742. In addition, an electrode 744a and an electrode 744b are included on the insulating layer 726 in a manner of contacting a portion of the semiconductor layer 742. The electrode 744a can be used as one of the source electrode and the drain electrode. The electrode 744b can be used as the other of the source electrode and the drain electrode. A portion of the electrode 744a and a portion of the electrode 744b are formed on the insulating layer 741.

[0466] The insulating layer 741 can be used as a channel protection layer. By providing the insulating layer 741 on the channel formation region, the semiconductor layer 742 can be prevented from being exposed when the electrodes 744a and 744b are formed. Thus, the channel formation region of the semiconductor layer 742 can be prevented from being etched when the electrodes 744a and 744b are formed. By one embodiment of the present invention, a transistor with good electrical characteristics can be realized.

[0467] In addition, the transistor 810 includes an insulating layer 728 over the electrode 744 a , the electrode 744 b , and the insulating layer 741 , and includes an insulating layer 729 over the insulating layer 728 .

[0468] For example, the insulating layer 772 can be formed using the same material and method as the insulating layer 722 or the insulating layer 705. In addition, the insulating layer 772 may also be a stack of multiple insulating layers. In addition, for example, the semiconductor layer 742 may be formed using the same material and method as the semiconductor layer 708. In addition, the semiconductor layer 742 may also be a stack of multiple semiconductor layers. In addition, for example, the electrode 746 may be formed using the same material and method as the electrode 706. In addition, the electrode 746 may also be a stack of multiple conductive layers. In addition, for example, the insulating layer 726 may be formed using the same material and method as the insulating layer 707. In addition, the insulating layer 726 may also be a stack of multiple insulating layers. In addition, for example, the electrode 744a and the electrode 744b may be formed using the same material and method as the electrode 714 or the electrode 715. In addition, the electrode 744a and the electrode 744b may also be a stack of multiple conductive layers. In addition, for example, the insulating layer 741 may be formed using the same material and method as the insulating layer 726. In addition, the insulating layer 741 may also be a stack of multiple insulating layers. In addition, for example, the insulating layer 728 can be formed using the same material and method as the insulating layer 710. In addition, the insulating layer 728 can also be a stack of multiple insulating layers. In addition, for example, the insulating layer 729 can be formed using the same material and method as the insulating layer 711. In addition, the insulating layer 729 can also be a stack of multiple insulating layers.

[0469] The electrodes, semiconductor layers, insulating layers, and the like constituting the transistor disclosed in this embodiment can be formed using the materials and methods disclosed in other embodiments.

[0470] When an oxide semiconductor is used for the semiconductor layer 742, a material that can remove oxygen from a portion of the semiconductor layer 742 to generate oxygen vacancies is preferably used for at least the portion of the electrode 724a and the electrode 724b that is in contact with the semiconductor layer 742. The carrier concentration in the region where the oxygen vacancies are generated in the semiconductor layer 742 increases, and the region is converted to n-type to become an n-type region (n + When an oxide semiconductor is used for the semiconductor layer 742, an example of a material that can remove oxygen from the semiconductor layer 742 to generate an oxygen vacancy may include tungsten, titanium, or the like.

[0471] By forming the source region and the drain region in the semiconductor layer 742, the contact resistance between the electrode 724a and the electrode 724b and the semiconductor layer 742 can be reduced. Therefore, the electrical characteristics of the transistor such as field effect mobility and threshold voltage can be improved.

[0472] When a semiconductor such as silicon is used for the semiconductor layer 742, a layer used as an n-type semiconductor or a p-type semiconductor is preferably provided between the semiconductor layer 742 and the electrode 724a and between the semiconductor layer 742 and the electrode 724b. The layer used as an n-type semiconductor or a p-type semiconductor can be used as a source region or a drain region of a transistor.

[0473] Note that a material having a function of preventing impurities from diffusing from the outside into the transistor or reducing diffusion of impurities is preferably used for the insulating layer 729. Alternatively, the insulating layer 729 may be omitted as necessary.

[0474] In addition, when an oxide semiconductor is used for the semiconductor layer 742, heat treatment may be performed before or after the insulating layer 729 is formed, or before and after the insulating layer 729 is formed. By performing the heat treatment, oxygen included in the insulating layer 729 or other insulating layers can be diffused into the semiconductor layer 742 to fill oxygen vacancies in the semiconductor layer 742. Alternatively, by forming the insulating layer 729 while heating the insulating layer 729, oxygen vacancies in the semiconductor layer 742 can be filled.

[0475] Generally speaking, CVD methods can be classified into plasma enhanced CVD (PECVD) methods using plasma and thermal CVD (TCVD) methods using heat, etc. Furthermore, according to the source gas used, CVD methods can be classified into metal CVD (MCVD) methods and metal organic CVD (MOCVD) methods, etc.

[0476] In addition, generally speaking, the evaporation method can be classified into resistance heating evaporation method, electron beam evaporation method, MBE (Molecular Beam Epitaxy) method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method, ion beam assisted deposition (IBAD: Ion Beam Assisted Deposition) method and atomic layer deposition (ALD: Atomic Layer Deposition) method, etc.

[0477] The plasma CVD method can obtain a high-quality film at a relatively low temperature. In addition, when a film forming method such as MOCVD or vapor deposition that does not use plasma is used during film formation, damage is not easily generated on the formed surface, thereby obtaining a film with few defects.

[0478] In addition, the sputtering method can be generally classified into a DC sputtering method, a magnetron sputtering method, an RF sputtering method, an ion beam sputtering method, an electron cyclotron resonance (ECR: Electron Cyclotron Resonance) sputtering method, an opposed target sputtering method, and the like.

[0479] In the facing target sputtering method, the plasma is confined between the targets, so the plasma damage to the substrate can be reduced. In addition, the incident angle of the sputtered particles relative to the substrate can be reduced by tilting the targets, so the step coverage can be improved.

[0480] Figure 44A2 The transistor 811 shown is different from the transistor 810 in that the transistor 811 includes an electrode 723 which can function as a back gate electrode over the insulating layer 729. The electrode 723 can be formed using the same material and method as the electrode 746.

[0481] Generally speaking, the back gate electrode is formed using a conductive layer and is arranged in a manner that the channel formation region of the semiconductor layer is sandwiched by the gate electrode and the back gate electrode. Therefore, the back gate electrode can have the same function as the gate electrode. The potential of the back gate electrode can be equal to that of the gate electrode, or it can be a ground potential (GND potential) or an arbitrary potential. In addition, by independently changing the potential of the back gate electrode without being linked to the gate electrode, the threshold voltage of the transistor can be changed.

[0482] The electrode 746 and the electrode 723 can both be used as gate electrodes. Therefore, the insulating layer 726, the insulating layer 728, and the insulating layer 729 can all be used as gate insulating layers. Alternatively, the electrode 723 may be provided between the insulating layer 728 and the insulating layer 729.

[0483] Note that when one of the electrode 746 and the electrode 723 is referred to as a "gate electrode", the other is referred to as a "back gate electrode". For example, in the transistor 811, when the electrode 723 is referred to as a "gate electrode", the electrode 746 is sometimes referred to as a "back gate electrode". In addition, when the electrode 723 is used as a "gate electrode", the transistor 811 is a top gate transistor. In addition, one of the electrode 746 and the electrode 723 is sometimes referred to as a "first gate electrode", and the other is sometimes referred to as a "second gate electrode".

[0484] By providing the electrode 746 and the electrode 723 via the semiconductor layer 742 and setting the potential of the electrode 746 and the electrode 723 to be the same, the region through which the carriers flow in the semiconductor layer 742 is further expanded in the film thickness direction, so the amount of carrier movement increases. As a result, the on-state current of the transistor 811 increases, and the field effect mobility also increases.

[0485] Therefore, transistor 811 is a transistor having a large on-state current relative to the occupied area. That is, the occupied area of ​​transistor 811 can be reduced relative to the required on-state current. According to one embodiment of the present invention, the occupied area of ​​the transistor can be reduced. Therefore, according to one embodiment of the present invention, a semiconductor device with high integration can be realized.

[0486] In addition, since the gate electrode and the back gate electrode are formed using a conductive layer, they have a function of preventing the electric field generated outside the transistor from affecting the semiconductor layer in which the channel is formed (especially an electric field shielding function against static electricity, etc.). Note that when the back gate electrode is formed larger than the semiconductor layer so as to cover the semiconductor layer with the back gate electrode, the electric field shielding function can be improved.

[0487] In addition, since both the electrode 746 and the electrode 723 have the function of shielding the electric field from the outside, the electric charges such as the charged particles generated on the side of the insulating layer 772 or above the electrode 723 do not affect the channel formation region of the semiconductor layer 742. As a result, the degradation caused by the stress test (for example, the -GBT (Gate Bias-Temperature: gate bias-temperature) stress test in which a negative charge is applied to the gate) can be suppressed. In addition, the phenomenon in which the gate voltage (rising voltage) changes in which the on-state current starts to flow according to the drain voltage can be reduced. Note that this effect occurs when the electrode 746 and the electrode 723 have the same potential or different potentials.

[0488] Note that the BT stress test is an accelerated test that can evaluate the change in transistor characteristics (change over time) caused by long-term use in a short period of time. In particular, the change in the threshold voltage of the transistor before and after the BT stress test is an important indicator for checking reliability. It can be said that the smaller the change in the threshold voltage, the higher the reliability of the transistor.

[0489] Furthermore, since the electrode 746 and the electrode 723 are provided and the potentials of the electrode 746 and the electrode 723 are set to be the same, the variation in threshold voltage is reduced. Therefore, the variation in electrical characteristics among the plurality of transistors is also reduced at the same time.

[0490] In addition, the change in threshold voltage before and after the +GBT stress test in which positive charge is applied to the gate of the transistor having the back gate electrode is smaller than that of the transistor not having the back gate electrode.

[0491] In addition, by forming the back gate electrode using a light-shielding conductive film, light can be prevented from entering the semiconductor layer from the back gate electrode side, thereby preventing light degradation of the semiconductor layer and preventing degradation of electrical characteristics such as threshold voltage drift of the transistor.

[0492] According to one embodiment of the present invention, a transistor with high reliability can be realized. In addition, a semiconductor device with high reliability can be realized.

[0493] Figure 44B1 A cross-sectional view of a channel protection transistor 820, which is one of the bottom-gate transistors, is shown. The transistor 820 has a structure substantially the same as that of the transistor 810, except that in the transistor 820, the insulating layer 741 covers the end of the semiconductor layer 742. In the opening formed by selectively removing a portion of the insulating layer 741 overlapping the semiconductor layer 742, the semiconductor layer 742 is electrically connected to the electrode 744a. In addition, in the other openings formed by selectively removing a portion of the insulating layer 741 overlapping the semiconductor layer 742, the semiconductor layer 742 is electrically connected to the electrode 744b. The region of the insulating layer 741 that overlaps the channel formation region can be used as a channel protection layer.

[0494] Figure 44B2 The transistor 821 shown is different from the transistor 820 in that the transistor 821 includes an electrode 723 on the insulating layer 729 that can be used as a back gate electrode.

[0495] By providing the insulating layer 729, exposure of the semiconductor layer 742 generated when the electrode 744a and the electrode 744b are formed can be prevented. Therefore, the semiconductor layer 742 can be prevented from being thinned when the electrode 744a and the electrode 744b are formed.

[0496] In addition, the distance between the electrode 744a and the electrode 746 and the distance between the electrode 744b and the electrode 746 of the transistor 820 and the transistor 821 are longer than those of the transistor 810 and the transistor 811. Therefore, the parasitic capacitance generated between the electrode 744a and the electrode 746 can be reduced. In addition, the parasitic capacitance generated between the electrode 744b and the electrode 746 can be reduced. According to one embodiment of the present invention, a transistor with good electrical characteristics can be provided.

[0497] Fig.44C1 The transistor 825 shown is a channel-etched transistor which is one of the bottom-gate transistors. In the transistor 825, the electrode 744a and the electrode 744b are formed without using the insulating layer 729. Therefore, a portion of the semiconductor layer 742 exposed when the electrode 744a and the electrode 744b are formed is sometimes etched. On the other hand, since the insulating layer 729 is not provided, the productivity of the transistor can be improved.

[0498] Fig.44C2 The transistor 826 shown is different from the transistor 825 in that the transistor 825 has an electrode 723 on the insulating layer 729 that can serve as a back gate electrode.

[0499] [Top-gate transistor] Figure 45A1 A cross-sectional view of a transistor 830 which is a top-gate transistor is shown. The transistor 830 includes a semiconductor layer 742 on an insulating layer 772, an electrode 744a in contact with a portion of the semiconductor layer 742 and an electrode 744b in contact with a portion of the semiconductor layer 742 on the semiconductor layer 742 and the insulating layer 772, an insulating layer 726 on the semiconductor layer 742, the electrode 744a, and the electrode 744b, and an electrode 746 on the insulating layer 726.

[0500] Since the electrode 746 and the electrode 744a and the electrode 746 and the electrode 744b do not overlap in the transistor 830, the parasitic capacitance generated between the electrode 746 and the electrode 744a and the parasitic capacitance generated between the electrode 746 and the electrode 744b can be reduced. In addition, after the electrode 746 is formed, the electrode 746 is used as a mask to introduce the impurity 755 into the semiconductor layer 742, thereby forming an impurity region in the semiconductor layer 742 in a self-alignment manner (see Figure 45A3 ). According to one embodiment of the present invention, a transistor with good electrical characteristics can be realized.

[0501] Alternatively, the impurity 755 can be introduced using an ion implantation apparatus, an ion doping apparatus, or a plasma treatment apparatus.

[0502] As the impurity 755 , for example, at least one element selected from Group 13 elements and Group 15 elements can be used. Alternatively, when an oxide semiconductor is used as the semiconductor layer 742 , as the impurity 755 , at least one element selected from a rare gas, hydrogen, and nitrogen can be used.

[0503] Figure 45A2 The transistor 831 shown is different from the transistor 830 in that the transistor 831 has an electrode 723 and an insulating layer 727. The transistor 831 has an electrode 723 formed on an insulating layer 772 and an insulating layer 727 formed on the electrode 723. As described above, the electrode 723 can be used as a back gate electrode. Therefore, the insulating layer 727 can be used as a gate insulating layer. The insulating layer 727 can be formed using the same material and method as the insulating layer 726.

[0504] The transistor 831 is a transistor having a large on-state current relative to the occupied area, similar to the transistor 811. That is, the occupied area of ​​the transistor 831 can be reduced relative to the required on-state current. According to one embodiment of the present invention, the occupied area of ​​the transistor can be reduced. Therefore, according to one embodiment of the present invention, a semiconductor device with high integration can be realized.

[0505] Fig.45B1The transistor 840 shown as an example is a top-gate transistor. The difference between the transistor 840 and the transistor 830 is that in the transistor 840, the semiconductor layer 742 is formed after the electrodes 744a and 744b are formed. Figure 45B2 The transistor 841 shown as an example is different from the transistor 840 in that the transistor 841 includes an electrode 723 and an insulating layer 727. In the transistor 840 and the transistor 841, part of the semiconductor layer 742 is formed on the electrode 744a, and the other part of the semiconductor layer 742 is formed on the electrode 744b.

[0506] Similar to transistor 811, transistor 841 is a transistor having a large on-state current relative to the occupied area. That is, the occupied area of ​​transistor 841 can be reduced relative to the required on-state current. According to one embodiment of the present invention, the occupied area of ​​the transistor can be reduced. Therefore, according to one embodiment of the present invention, a semiconductor device with high integration can be realized.

[0507] Figure 46A1 The transistor 842 shown as an example is a top-gate transistor. The transistor 842 is different from the transistor 830 or the transistor 840 in that the electrodes 744a and 744b are formed after the insulating layer 729 is formed. The electrodes 744a and 744b are electrically connected to the semiconductor layer 742 through the openings formed in the insulating layers 728 and 729.

[0508] In addition, a portion of the insulating layer 726 that does not overlap with the electrode 746 is removed, and the impurity 755 is introduced into the semiconductor layer 742 using the electrode 746 and the remaining insulating layer 726 as a mask, thereby forming an impurity region in the semiconductor layer 742 in a self-aligned manner (see Figure 46A3 ). The transistor 842 includes a region where the insulating layer 726 extends beyond the end of the electrode 746. When the impurity 755 is introduced into the semiconductor layer 742, the impurity concentration of the region of the semiconductor layer 742 into which the impurity 755 is introduced via the insulating layer 726 is lower than that of the region into which the impurity 755 is introduced without the insulating layer 726. Therefore, an LDD (Lightly Doped Drain) region is formed in the region of the semiconductor layer 742 adjacent to the portion overlapping the electrode 746.

[0509] Figure 46A2 The transistor 843 shown is different from the transistor 842 in that the transistor 843 includes an electrode 723. The transistor 843 includes an electrode 723 formed on a substrate 771, and the electrode 723 overlaps the semiconductor layer 742 via an insulating layer 772. The electrode 723 can be used as a back gate electrode.

[0510] In addition, if Figure 46B1 The transistor 844 and Figure 46B2 As in the transistor 845 shown in FIG. 8 , the insulating layer 726 in the region not overlapping with the electrode 746 may be completely removed. Fig.46C1 The transistor 846 and Fig.46C2 As with the transistor 847 shown in the figure, the insulating layer 726 may also be left.

[0511] In transistors 842 to 847, after forming electrode 746, impurity 755 may be introduced into semiconductor layer 742 using electrode 746 as a mask, thereby forming an impurity region in semiconductor layer 742 in a self-aligned manner. According to one embodiment of the present invention, a transistor with good electrical characteristics can be realized. In addition, according to one embodiment of the present invention, a semiconductor device with high integration can be realized.

[0512] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0513] Implementation method 5 In this embodiment, a configuration example of a touch panel module including a touch panel and an IC according to one embodiment of the present invention will be described with reference to the drawings.

[0514] Fig.47 FIG. 65 is a block diagram of a touch panel module 6500 . The touch panel module 6500 includes a touch panel 6510 and an IC 6520 .

[0515] The touch panel 6510 includes a display unit 6511, an input unit 6512, and a scan line driving circuit 6513. The display unit 6511 includes a plurality of pixels, a plurality of signal lines, and a plurality of scan lines, and can display an image. The input unit 6512 includes a plurality of sensor elements for sensing the contact or proximity of a sensing object to the touch panel 6510, and can be used as a touch sensor. The scan line driving circuit 6513 can output a scan signal to the scan line in the display unit 6511.

[0516] Here, although the display portion 6511 and the input portion 6512 are shown separately as the structure of the touch panel 6510 for convenience of explanation, it is preferable to use a so-called in-cell touch panel that has both the function of displaying an image and the function of a touch sensor.

[0517] As a touch sensor that can be used as the input unit 6512, for example, an electrostatic capacitance type can be used. As electrostatic capacitance types, there are surface electrostatic capacitance types, projected electrostatic capacitance types, etc. As projected electrostatic capacitance types, there are self-capacitance types, mutual capacitance types, etc. It is preferable to use a mutual capacitance type, which allows multi-point detection to be performed simultaneously.

[0518] Note that the present invention is not limited to this, and various sensors that can sense the approach or contact of a sensing object such as a finger or a stylus pen can be used for the input portion 6512. For example, as a sensor type, various types such as a resistive film type, a surface acoustic wave type, an infrared type, and an optical type can be used in addition to an electrostatic capacitance type.

[0519] As In-Cell type touch panels, there are typically Semi-In-Cell type and Full-In-Cell type. Semi-In-Cell type refers to a structure in which electrodes constituting a touch sensor are provided on both sides of a substrate supporting a display element and an opposing substrate or on an opposing substrate. On the other hand, Full-In-Cell type refers to a structure in which electrodes constituting a touch sensor are provided on a substrate supporting a display element. By adopting a Full-In-Cell type touch panel, the structure of the opposing substrate can be simplified, so it is preferred. In particular, in the Full-In-Cell type, by making the electrodes constituting the display element also serve as the electrodes constituting the touch sensor, the manufacturing process can be simplified, thereby reducing the manufacturing cost, so it is preferred.

[0520] The display unit 6511 preferably has an extremely high resolution such as HD (pixel number 1280×720), FHD (pixel number 1920×1080), WQHD (pixel number 2560×1440), WQXGA (pixel number 2560×1600), 4K (pixel number 3840×2160), 8K (pixel number 7680×4320). It is particularly preferred to have a resolution of 4K, 8K or higher. In addition, the density (clarity) of the pixels provided in the display unit 6511 is preferably greater than 300ppi, more preferably greater than 500ppi, more preferably greater than 800ppi, further preferably greater than 1000ppi, and further preferably greater than 1200ppi. Such a display unit 6511 with high resolution and high definition can further enhance the sense of reality or depth in personal uses such as portable or home use.

[0521] IC 6520 includes a circuit unit 6501, a signal line driving circuit 6502, a sensor driving circuit 6503, and a detection circuit 6504. The circuit unit 6501 includes a timing controller 6505, an image processing circuit 6506, and the like.

[0522] The signal line driver circuit 6502 can output an image signal (also referred to as a video signal) as an analog signal to the signal line in the display unit 6511. For example, the signal line driver circuit 6502 may have a structure that combines a shift register circuit and a buffer circuit. In addition, the touch panel 6510 may include a demultiplexer circuit connected to the signal line.

[0523] The sensor driving circuit 6503 can output a signal that drives the sensor element in the input section 6512. The sensor driving circuit 6503 can have a structure in which a shift register circuit and a buffer circuit are combined, for example.

[0524] The detection circuit 6504 can output the output signal from the sensor element in the input unit 6512 to the circuit unit 6501. For example, the detection circuit 6504 may include an amplifier circuit and an analog data conversion circuit (ADC: Analog-Digital Convertor). In this case, the detection circuit 6504 converts the analog signal output from the input unit 6512 into a digital signal and outputs it to the circuit unit 6501.

[0525] The image processing circuit 6506 in the circuit unit 6501 has the following functions: generating and outputting a signal for driving the display unit 6511 of the touch panel 6510; generating and outputting a signal for driving the input unit 6512; and analyzing the signal output from the input unit 6512 and outputting it to the CPU 6540.

[0526] Specifically, the image processing circuit 6506 can generate an image signal according to the instruction of the CPU 6540. In addition, the image processing circuit 6506 can perform signal processing on the image signal according to the specification of the display unit 6511 to convert it into an analog image signal and supply it to the signal line driving circuit 6502. In addition, the image processing circuit 6506 can generate a driving signal output to the sensor driving circuit 6503 according to the instruction of the CPU 6540. The image processing circuit 6506 can also analyze the signal input from the detection circuit 6504 and output it to the CPU 6540 as position information.

[0527] The timing controller 6505 can generate and output signals (clock signals, start pulse signals, etc.) to the scan line driving circuit 6513 and the sensor driving circuit 6503 according to the synchronization signals in the image signal processed by the image processing circuit 6506. The timing controller 6505 may also have the function of generating and outputting signals that specify the timing of the output signal of the detection circuit 6504. Here, the timing controller 6505 preferably outputs signals that are synchronized with the signals output to the scan line driving circuit 6513 and the signals output to the sensor driving circuit 6503. In particular, it is preferred to separate the period of rewriting the data of the pixels of the display unit 6511 and the period of sensing in the input unit 6512. For example, the touch panel 6510 can be driven in a manner that divides one frame period into a period of rewriting the data of the pixels and a sensing period. In addition, for example, by setting two or more sensing periods in one frame period, the detection sensitivity and detection accuracy can be improved.

[0528] The image processing circuit 6506 may include, for example, a processor. For example, a microprocessor such as a DSP (Digital Signal Processor) or a GPU (Graphics Processing Unit) may be used. The microprocessor may also be composed of a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array) or an FPAA (Field Programmable Analog Array). Various data processing or program control is performed by interpreting and executing instructions from various programs by the processor. The program that may be executed by the processor may be stored in a memory area in the processor or in a separately provided storage device.

[0529] In addition, a transistor that uses an oxide semiconductor in its channel formation region to achieve an extremely small off-state current can also be used for the display unit 6511 in the touch panel 6510, the scan line driver circuit 6513, the circuit unit 6501 in the IC 6520, the signal line driver circuit 6502, the sensor driver circuit 6503, the detection circuit 6504, or the CPU 6540 disposed outside. Since the off-state current of the transistor is extremely small, the long-term retention of the data can be ensured by using the transistor to maintain the switch of the charge (data) flowing into the capacitor element used as the storage element. For example, by applying this characteristic to the register or cache memory of the image processing circuit 6506, the image processing circuit 6506 can be operated only when necessary, and the previously processed information is stored in the storage element in other cases, thereby realizing normally off computing, thereby realizing low power consumption of the touch panel module 6500 and the electronic device equipped with the touch panel module 6500.

[0530] Note that although the circuit unit 6501 is shown to include the timing controller 6505 and the image processing circuit 6506, the image processing circuit 6506 or a circuit having a part of the function of the image processing circuit 6506 may be provided outside the IC 6520. Alternatively, the CPU 6540 may assume all or part of the function of the image processing circuit 6506. For example, the circuit unit 6501 may include the signal line driving circuit 6502, the sensor driving circuit 6503, the detection circuit 6504, and the timing controller 6505.

[0531] Note that although an example in which the IC 6520 includes the circuit unit 6501 is shown here, the circuit unit 6501 may not be included in the IC 6520. In this case, a structure in which the IC 6520 includes the signal line driving circuit 6502, the sensor driving circuit 6503, and the detection circuit 6504 may be adopted. For example, when a plurality of ICs are mounted in the touch panel module 6500, the circuit unit 6501 may be additionally provided to configure a plurality of ICs 6520 that do not include the circuit unit 6501, or an IC that includes only the IC 6520 and the signal line driving circuit 6502 may be combined to configure.

[0532] In this way, by combining the function of driving the display portion 6511 of the touch panel 6510 and the function of driving the input portion 6512 in one IC, the number of ICs mounted in the touch panel module 6500 can be reduced, thereby reducing costs.

[0533] Fig.48A , Fig.48B and Fig.48C FIG. 6 is a schematic diagram of a touch panel module 6500 in which an IC 6520 is mounted.

[0534] exist Fig.48A In the embodiment, the touch panel module 6500 includes a substrate 6531, a counter substrate 6532, a plurality of FPCs 6533, IC 6520, and IC 6530. A display portion 6511, an input portion 6512, and a scan line driving circuit 6513 are provided between the substrate 6531 and the counter substrate 6532. The IC 6520 and the IC 6530 are mounted on the substrate 6531 by a mounting method such as a COG method.

[0535] IC6530 is an IC including only the signal line driver circuit 6502 or the signal line driver circuit 6502 and the circuit unit 6501 in the above IC6520. Signals are supplied from the outside to IC6520 or IC6530 through FPC6533. Signals can also be output from IC6520 or IC6530 to the outside through FPC6533.

[0536] Fig.48A The structure in which two scanning line driver circuits 6513 are provided so as to sandwich the display portion 6511 is exemplified. Also, the structure in which the IC 6530 is included in addition to the IC 6520 is shown. Such a structure is suitable for a case where the resolution of the display portion 6511 is extremely high.

[0537] Fig.48B An example in which one IC 6520 and one FPC 6533 are installed is shown. In this way, by concentrating functions on one IC 6520, the number of components can be reduced, which is preferred. Fig.48B, an example is shown in which the scan line driver circuit 6513 is arranged along the side closer to the FPC 6533 of the two short sides of the display portion 6511.

[0538] Fig.48C The structure shown in the figure includes a PCB (Printed Circuit Board) 6534 on which the image processing circuit 6506 and the like are mounted. IC 6520 and IC 6530 on the substrate 6531 are electrically connected to the PCB 6534 via an FPC 6533. Here, the IC 6520 may not include the image processing circuit 6506.

[0539] In addition, Fig.48A , Fig.48B and Fig.48C In each of the figures, IC6520 or IC6530 may be mounted on FPC6533 instead of substrate 6531. For example, IC6520 or IC6530 may be mounted on FPC6533 by a mounting method such as COF (Chip On Film) or TAB (Tape Automated Bonding).

[0540] like Fig.48A and Fig.48B As shown in FIG. 1 , a structure in which FPC 6533 or IC 6520 (and IC 6530) is arranged on the short side of the display unit 6511 can realize a narrow frame, and thus can be applied to electronic devices such as smartphones, mobile phones, or tablet terminals. Fig.48C The structure using PCB6534 shown can be applied to, for example, a television device, a display device, a tablet terminal, or a notebook personal computer.

[0541] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0542] Implementation 6 In this embodiment, refer to Fig.49 , FIG. 50A to FIG. 50H , Fig.51A and Fig.51B , FIG. 52A to FIG. 52H , FIG. 53A1 to FIG. 53I and FIG. 54A to FIG. 54E A display module and an electronic device including a display device or a display system according to one embodiment of the present invention will be described.

[0543] Fig.49 The display module 8000 shown includes a touch panel 8004 connected to an FPC 8003 , a frame 8009 , a printed substrate 8010 , and a battery 8011 between an upper cover 8001 and a lower cover 8002 .

[0544] For example, the display panel, touch panel, or touch panel module which is one embodiment of the present invention can be used for the touch panel 8004 .

[0545] The shapes and sizes of the upper cover 8001 and the lower cover 8002 can be appropriately changed according to the size of the touch panel 8004 .

[0546] The touch panel 8004 may be a resistive film touch panel or a capacitive touch panel, and may be formed to overlap with the display panel. In addition, the opposing substrate (sealing substrate) of the touch panel 8004 may also have the function of a touch panel. In addition, a light sensor may be provided in each pixel of the touch panel 8004 to form an optical touch panel.

[0547] In addition, when a transmissive or semi-transmissive liquid crystal element is used, Fig.49 The backlight 8007 is shown. The backlight 8007 includes a light source 8008. Note that although Fig.49 2 shows a structure in which the light source 8008 is arranged on the backlight 8007, but the present invention is not limited thereto. For example, the light source 8008 may be arranged at the end of the backlight 8007, and a light diffusion plate may be used. When a self-luminous light-emitting element such as an organic EL element is used, or when a reflective panel is used, a structure in which the backlight 8007 is not arranged may be adopted.

[0548] The frame 8009 has a function of protecting the display panel 8006 and also has an electromagnetic shielding function for blocking electromagnetic waves generated by the operation of the printed substrate 8010. Alternatively, the frame 8009 may also function as a heat sink.

[0549] The printed circuit board 8010 has a power supply circuit and a signal processing circuit for outputting a video signal and a clock signal. As a power supply for supplying power to the power supply circuit, an external commercial power supply can be used, or a power supply of a separately provided battery 8011 can be used. When a commercial power supply is used, the battery 8011 can be omitted.

[0550] In addition, components such as a polarizing plate, a phase difference plate, and a prism sheet may be provided in the touch panel 8004 .

[0551] By using a display panel, a light-emitting panel, a sensor panel, a touch panel, a touch panel module, an input device, a display device, or an input / output device of one embodiment of the present invention, an electronic device or a lighting device can be manufactured. By using an input device, a display device, or an input / output device of one embodiment of the present invention, an electronic device or a lighting device having a curved surface and high reliability can be manufactured. In addition, by using an input device, a display device, or an input / output device of one embodiment of the present invention, an electronic device or a lighting device having flexibility and high reliability can be manufactured. In addition, by using an input device or an input / output device of one embodiment of the present invention, an electronic device or a lighting device having improved detection sensitivity of a touch sensor can be manufactured.

[0552] Examples of electronic devices include: television devices (also called televisions or television receivers); monitors for computers, etc.; digital cameras; digital imagers; digital photo frames; mobile phones (also called mobile phones, mobile phone devices); portable game consoles; portable information terminals; sound reproduction devices; large-scale game consoles such as pinball machines, etc.

[0553] Furthermore, when the electronic device or lighting device of one embodiment of the present invention is flexible, the electronic device or lighting device can be assembled along the curved surface of the inner or outer wall of a house or building, or the interior or exterior decoration of a car.

[0554] An electronic device according to one embodiment of the present invention may include a secondary battery, and the secondary battery is preferably charged by contactless power transmission.

[0555] Examples of secondary batteries include lithium ion secondary batteries such as lithium polymer batteries (lithium ion polymer batteries) using a gel electrolyte, lithium ion batteries, nickel hydrogen batteries, nickel cadmium batteries, organic radical batteries, lead storage batteries, air secondary batteries, nickel zinc batteries, and silver zinc batteries.

[0556] An electronic device according to one embodiment of the present invention may include an antenna. By receiving a signal through the antenna, an image or information can be displayed on a display unit. In addition, when the electronic device includes a secondary battery, the antenna can be used for contactless power transmission.

[0557] FIG. 50A to FIG. 50H and Fig.51A and Fig.51B5000, a display unit 5001, a speaker 5003, an LED lamp 5004, an operation key 5005 (including a power switch or an operation switch), a connection terminal 5006, a sensor 5007 (which has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, inclination, vibration, smell or infrared), a microphone 5008, etc.

[0558] Fig.50A A mobile computer is shown, which may include a switch 5009, an infrared port 5010, etc. in addition to the above.

[0559] Fig.50B A portable image reproduction device (for example, a DVD reproduction device) provided with a recording medium is shown, and the portable image reproduction device may include a second display portion 5002, a recording medium reading portion 5011, and the like in addition to the above.

[0560] Fig.50C The television device shown in FIG. 5000 may further include a stand 5012 and the like in addition to the above. The television device can be operated by using an operation switch provided in the housing 5000 or a remote control unit 5013 provided separately. By using the operation keys provided in the remote control unit 5013, the channel and volume can be operated, and the image displayed on the display unit 5001 can be operated. In addition, a display unit for displaying data output from the remote control unit 5013 may be provided in the remote control unit 5013.

[0561] Fig.50D The portable game machine is shown, and the portable game machine may include a recording medium reading unit 5011 and the like in addition to the above.

[0562] Fig.50E A digital camera having a television reception function is shown, and the digital camera may include an antenna 5014, a shutter button 5015, an image receiving unit 5016, and the like in addition to the above.

[0563] Fig.50F 2004 , a portable game machine is shown, which may include a second display portion 5002 , a recording medium reading portion 5011 , and the like in addition to the above.

[0564] Figure 50G A portable television receiver is shown, which may include a charger 5017 capable of transmitting and receiving signals, etc. in addition to the above.

[0565] Figure 50HThe present invention is a watch-type information terminal, which may include a strap 5018, a strap buckle 5019, etc. in addition to the above. The display unit 5001 installed in the frame 5000 which also serves as a frame (bezel) has a non-rectangular display area. The display unit 5001 can display an icon 5020 indicating time and other icons 5021.

[0566] Fig.51A It is digital signage. Fig.51B It is a digital sign installed on a cylindrical column.

[0567] FIG. 50A to FIG. 50H , Fig.51A and Fig.51B The electronic device shown may have various functions. For example, it may have the following functions: a function of displaying various information (static images, dynamic images, text images, etc.) on a display unit; a touch screen function; a function of displaying a calendar, date or time, etc.; a function of controlling processing by using various software (programs); a function of wireless communication; a function of connecting to various computer networks by using a wireless communication function; a function of sending or receiving various data by using a wireless communication function; a function of reading out programs or data stored in a storage medium and displaying them on a display unit; etc. In addition, an electronic device including multiple display units may have a function of mainly displaying image information on one display unit and mainly displaying text information on another display unit, or a function of displaying a three-dimensional image by displaying an image that takes parallax into account on multiple display units, etc. Furthermore, in an electronic device having an image receiving unit, it may have the following functions: shooting still images; shooting moving images; automatically or manually correcting the shot images; storing the shot images in a recording medium (externally or built into an image shooting device); displaying the shot images on a display unit; etc. Note that, FIG. 50A to FIG. 50H , Fig.51A and Fig.51B The functions that the electronic device shown may have are not limited to the above functions, but may have various functions.

[0568] Fig.52A , Fig.52B , Fig.52C1 , Fig.52C2 , Fig.52D and Fig.52E An example of an electronic device having a curved display portion 7000 is shown. The display surface of the display portion 7000 is curved, and display can be performed along the curved display surface. The display portion 7000 may also be flexible.

[0569] The display portion 7000 can be manufactured by using the display panel, light emitting panel, sensor panel, touch panel, display device, input / output device, or the like according to one embodiment of the present invention. According to one embodiment of the present invention, a highly reliable electronic device having a curved display portion can be provided.

[0570] Fig.52A The mobile phone 7100 includes a housing 7101, a display portion 7000, operation buttons 7103, an external connection port 7104, a speaker 7105, a microphone 7106, and the like.

[0571] Fig.52A The illustrated mobile phone 7100 includes a touch sensor in a display portion 7000. By touching the display portion 7000 with a finger or a stylus pen, all operations such as making a call and inputting text can be performed.

[0572] Furthermore, by operating the operation button 7103, the power can be turned on and off or the type of image displayed on the display portion 7000 can be switched. For example, the e-mail composition screen can be switched to the main menu screen.

[0573] Fig.52B 10 shows an example of a television set. In a television set 7200, a display portion 7000 is incorporated in a housing 7201. Here, a structure in which the housing 7201 is supported by a stand 7203 is shown.

[0574] The operation can be performed by using the operation switch provided in the frame 7201 and the remote control operation machine 7211 provided separately. Fig.52B The television device 7200 shown in FIG. 7 is operated. In addition, the display portion 7000 may be provided with a touch sensor, and the display portion 7000 may be operated by touching the display portion 7000 with a finger or the like. The remote controller 7211 may be provided with a display portion for displaying data output from the remote controller 7211. By using the operation keys or the touch screen provided in the remote controller 7211, the channel and volume can be operated, and the image displayed on the display portion 7000 can be operated.

[0575] The television set 7200 is provided with a receiver and a modem. The receiver can receive general television broadcasts. The television set 7200 can be connected to a wired or wireless communication network via a modem to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver or between receivers, etc.) information communication.

[0576] Fig.52C1 , Fig.52C2 , Fig.52D and Fig.52EAn example of a portable information terminal is shown. Each portable information terminal includes a frame 7301 and a display unit 7000. In addition, it may also include operation buttons, an external connection port, a speaker, a microphone, an antenna or a battery. The display unit 7000 has a touch sensor. The portable information terminal can be operated by touching the display unit 7000 with a finger or a stylus pen.

[0577] Fig.52C1 is a perspective view of a portable information terminal 7300, Fig.52C2 It is a top view of the portable information terminal 7300. Fig.52D It is a perspective view of the portable information terminal 7310. Fig.52E It is a perspective view of the portable information terminal 7320.

[0578] The portable information terminal illustrated in this embodiment has one or more functions selected from a telephone, an electronic notebook, and an information reading device. Specifically, the portable information terminal can be used as a smart phone. The portable information terminal illustrated in this embodiment can execute various applications such as mobile phones, e-mails, article reading and writing, music playing, network communication, computer games, etc.

[0579] Portable information terminals 7300, 7310, and 7320 can display text or image information on multiple surfaces. Fig.52C1 , Fig.52D As shown, three operation buttons 7302 may be displayed on one surface, while information 7303 represented by a rectangle may be displayed on another surface. Fig.52C1 and Fig.52C2 An example of displaying information on the upper surface of a portable information terminal is shown. Fig.52D An example of displaying information on the side of a portable information terminal is shown. In addition, information can also be displayed on more than three sides. Fig.52E An example is shown in which information 7304, information 7305, and information 7306 are displayed on different surfaces.

[0580] In addition, examples of information include a display indicating that a notification of an SNS (Social Networking Services), an email, or a phone call has been received; the title of the email or the sender's name; the date; the time; the battery level; and the antenna reception strength. Alternatively, an operation button or icon may be displayed in place of the information.

[0581] For example, the user of portable information terminal 7300 can check the display (here, information 7303) while placing portable information terminal 7300 in a jacket pocket.

[0582] Specifically, the phone number or name of the caller is displayed at a position where the information can be seen from above the portable information terminal 7300. The user can confirm this display without taking the portable information terminal 7300 out of the pocket, thereby being able to determine whether to answer the call.

[0583] FIG. 52F to FIG. 52H An example of a lighting device having a curved light-emitting portion is shown.

[0584] Manufacturing of a display panel, a light emitting panel, a sensor panel, a touch panel, a display device, an input / output device, etc. using one embodiment of the present invention FIG. 52F to FIG. 52H The light emitting portion of each lighting device shown in the figure. According to one embodiment of the present invention, a highly reliable lighting device having a curved light emitting portion can be provided.

[0585] Fig.52F The lighting device 7400 shown includes a light emitting portion 7402 having a wavy light emitting surface. Therefore, a lighting device with high design properties is provided.

[0586] Figure 52G The light emitting unit 7412 of the lighting device 7410 shown in the figure has a structure in which two light emitting units are symmetrically arranged and bent into a convex shape. Therefore, it is possible to illuminate in all directions with the lighting device 7410 as the center.

[0587] Fig.52H The lighting device 7420 shown has a light emitting portion 7422 bent into a concave shape. Therefore, since the light from the light emitting portion 7422 is concentrated in front of the lighting device 7420, it is suitable for use in the case of illuminating a specific range. By adopting such a structure, the effect of not easily generating a shadow can be exerted.

[0588] Each light emitting unit of the lighting device 7400, the lighting device 7410, and the lighting device 7420 may be flexible. A structure may be adopted in which the light emitting unit is fixed using a plastic member or a movable frame and the light emitting surface of the light emitting unit can be bent as desired according to the application.

[0589] Each of the lighting device 7400 , the lighting device 7410 , and the lighting device 7420 includes a base 7401 having an operation switch 7403 and a light emitting portion supported by the base 7401 .

[0590] Although the lighting device in which the light-emitting portion is supported by a base is exemplified here, the lighting device may be used in a manner in which a frame body having the light-emitting portion is fixed or hung on a ceiling. Since the lighting device can be used in a state in which the light-emitting surface is curved, the light-emitting surface can be curved concavely to illuminate a specific area or curved convexly to illuminate the entire room.

[0591] Figure 53A1 , Figure 53A2 , Fig.53B , Fig.53C , Fig.53D , Fig.53E , Fig.53F , Figure 53G , Fig.53H and Fig.53I An example of a portable information terminal including a flexible display portion 7001 is shown.

[0592] The display portion 7001 can be manufactured by using a display panel, a light-emitting panel, a sensor panel, a touch panel, a display device, or an input / output device, etc., which is one embodiment of the present invention. For example, a display device or an input / output device that can be bent with a radius of curvature of more than 0.01 mm and less than 150 mm can be used. In addition, the display portion 7001 can be provided with a touch sensor, and the portable information terminal can be operated by touching the display portion 7001 with a finger or the like. By one embodiment of the present invention, an electronic device having a flexible display portion and high reliability can be provided.

[0593] Figure 53A1 is a perspective view showing an example of a portable information terminal, Figure 53A2 7500 is a side view showing an example of a portable information terminal. The portable information terminal 7500 includes a housing 7501, a display portion 7001, a take-out member 7502, an operation button 7503, and the like.

[0594] The portable information terminal 7500 includes a flexible display portion 7001 rolled up in a housing 7501 .

[0595] In addition, the portable information terminal 7500 can receive an image signal through the built-in control unit, and can display the received image on the display unit 7001. In addition, a battery is built into the portable information terminal 7500. In addition, a structure in which the housing 7501 has a terminal portion connected to a connector and an image signal or power is directly supplied from the outside in a wired manner can also be adopted.

[0596] In addition, the operation button 7503 can be used to turn the power on and off or switch the displayed image. Figure 53A1 , Figure 53A2 and Fig.53B Although an example is shown in which the operation buttons 7503 are arranged on the side surface of the portable information terminal 7500, the present invention is not limited to this, and the operation buttons 7503 may be arranged on the same surface as the display surface (front surface) of the portable information terminal 7500 or on the back surface.

[0597] Fig.53BThe portable information terminal 7500 is shown in a state where the display unit 7001 is taken out using the take-out member 7502. In this state, an image can be displayed on the display unit 7001. In addition, the portable information terminal 7500 can also be a part of the display unit 7001 rolled up. Figure 53A1 The state shown and the removal of the display unit 7001 using the removal member 7502 Fig.53B The status shown is displayed differently. For example, Figure 53A1 By making the rolled-up portion of the display unit 7001 non-display in the state, the power consumption of the portable information terminal 7500 can be reduced.

[0598] In addition, a frame for reinforcement may be provided on the side of the display portion 7001 so that the display surface of the display portion 7001 can be fixed in a flat shape when the display portion 7001 is taken out.

[0599] In addition to this configuration, a configuration may be adopted in which a speaker is provided in the housing and sound is output using an audio signal received simultaneously with a video signal.

[0600] FIG. 53C to FIG. 53E An example of a foldable portable information terminal is shown. Fig.53C The portable information terminal 7600 is shown in an unfolded state. Fig.53D A portable information terminal 7600 is shown in a state in the middle of changing from one of an unfolded state and a folded state to another state, Fig.53E The portable information terminal 7600 is shown in a folded state. The portable information terminal 7600 is highly portable in the folded state, and has a large display area that is seamlessly connected so that the display is easily visible in the unfolded state.

[0601] The three housings 7601 connected by the hinge 7602 support the display portion 7001. By folding between two housings 7601 using the hinge 7602, the portable information terminal 7600 can be reversibly changed from the unfolded state to the folded state.

[0602] Fig.53F and Figure 53G An example of a foldable portable information terminal is shown. Fig.53F The portable information terminal 7650 is shown in a state where it is folded so that the display portion 7001 is located inside. Figure 53G The portable information terminal 7650 is folded so that the display portion 7001 is located outside. The portable information terminal 7650 includes a display portion 7001 and a non-display portion 7651. When the portable information terminal 7650 is not in use, by folding so that the display portion 7001 is located inside, it is possible to prevent the display portion 7001 from being soiled or damaged.

[0603] Fig.53H An example of a flexible portable information terminal is shown. The portable information terminal 7700 includes a housing 7701 and a display portion 7001. In addition, buttons 7703a and 7703b used as input units, speakers 7704a and 7704b used as audio output units, an external connection port 7705, and a microphone 7706 may be included. In addition, the portable information terminal 7700 may be assembled with a flexible battery 7709. The battery 7709 may also overlap with the display portion 7001, for example.

[0604] The frame 7701, the display portion 7001, and the battery 7709 are flexible. Therefore, the portable information terminal 7700 can be easily bent into a desired shape, or the portable information terminal 7700 can be twisted. For example, the portable information terminal 7700 can also be folded and used in a manner such that the display portion 7001 is located inside or outside. Alternatively, the portable information terminal 7700 can also be used in a state where it is rolled into a roll. In this way, since the frame 7701 and the display portion 7001 can be deformed freely, the portable information terminal 7700 has the advantage that it is not easily damaged even if it is dropped or an unintended external force is applied.

[0605] In addition, since the portable information terminal 7700 is lightweight, the portable information terminal 7700 can be conveniently used in various situations, such as by hanging it by clamping the upper part of the frame 7701 with a clip or the like or by fixing the frame 7701 to a wall with a magnet or the like.

[0606] Fig.53I An example of a wristwatch-type portable information terminal is shown. The portable information terminal 7800 includes a strap 7801, a display unit 7001, an input / output terminal 7802, and an operation button 7803. The strap 7801 has a function as a frame. In addition, the portable information terminal 7800 may be assembled with a flexible battery 7805. The battery 7805 may also overlap with the display unit 7001 and the strap 7801, for example.

[0607] The strap 7801, the display portion 7001, and the battery 7805 are flexible. Therefore, the portable information terminal 7800 can be easily bent into a desired shape.

[0608] In addition to time setting, operation button 7803 may have various functions such as power switch, wireless communication switch, silent mode on / off, power saving mode on / off, etc. For example, by using an operating system incorporated in portable information terminal 7800, the function of operation button 7803 may be freely set.

[0609] In addition, by touching an icon 7804 displayed on the display portion 7001 with a finger or the like, an application can be started.

[0610] Portable information terminal 7800 can also perform short-range wireless communication that is standardized for communication, such as by communicating with a headset capable of wireless communication, a hands-free call can be made.

[0611] In addition, the portable information terminal 7800 may also include an input / output terminal 7802. When the input / output terminal 7802 is included, the portable information terminal 7800 can directly exchange data with other information terminals through a connector. In addition, charging can also be performed through the input / output terminal 7802. In addition, the charging operation of the portable information terminal illustrated in this embodiment can also be performed using non-contact power transmission without using the input / output terminal 7802.

[0612] Fig.54A , Fig.54B and Fig.54C An example of a foldable wristwatch-type portable information terminal is shown. A portable information terminal 7900 includes a display portion 7901, a housing 7902, a housing 7903, a band 7904, an operation button 7905, and the like.

[0613] Portable information terminal 7900 can be used from Fig.54A The state in which the frame 7902 is overlapped on the frame 7903 is shown as follows Fig.54B As shown, the frame 7902 is lifted and reversibly becomes Fig.54C Therefore, the portable information terminal 7900 can be used in a state where the display portion 7901 is folded, for example, at ordinary times, and can also be used by expanding the display area by unfolding the display portion 7901.

[0614] In addition, since the display portion 7901 has a touch panel function, the portable information terminal 7900 can be operated by touching the display portion 7901. In addition, the portable information terminal 7900 can be operated by pressing the operation button 7905, rotating or moving it up and down, in front of the user, or in the depth direction.

[0615] like Fig.54A As shown, in the state where the frame 7902 and the frame 7903 overlap, in order to prevent the frame 7902 and the frame 7903 from being separated unintentionally, it is preferable to include a locking mechanism. In this case, for example, it is preferable to adopt a structure that can release the locked state by pressing an operation button 7905 or the like. Alternatively, the restoring force of a spring or the like can be used to release the locked state. Fig.54A The status shown automatically changes to Fig.54CAlternatively, magnetic force may be used instead of a locking mechanism to fix the corresponding positions of frame 7902 and frame 7903. Frame 7902 and frame 7903 may be easily disassembled or connected by using magnetic force. For example, a ferromagnetic body may be arranged in one of frame 7902 and frame 7903, and a ferromagnetic body or a paramagnetic body or other magnetic body may be arranged in a position where the ferromagnetic body overlaps with the other frame when the two frames are overlapped.

[0616] exist Fig.54A , Fig.54B and Fig.54C Although the display portion 7901 is shown to be able to be unfolded in a direction substantially perpendicular to the direction in which the strap 7904 is bent, Fig.54D and Fig.54E As shown, the display portion 7901 may be unfolded in a direction substantially parallel to the direction in which the strap 7904 is bent. In addition, at this time, the display portion 7901 may be bent so as to be rolled up on the strap 7904 and used.

[0617] The electronic device described in this embodiment is characterized by having a display unit for displaying certain information. The display panel, touch panel, touch panel module, or the like according to one embodiment of the present invention can be applied to the display unit.

[0618] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate. Explanation of symbols

[0619] 10Touch panel module 21 substrate 22 Touch Sensors 23 Wiring 23a wiring 23b wiring 24 Wiring 24a wiring 24b wiring 26 Conductive layer 26a Conductive layer 26b Conductive layer 31 substrate 32 Display unit 34 circuits 35 Wiring 36 pixel electrodes 37 LCD 38 Common electrode 40 light emitting elements 42FPC 43IC 47EL layer 48 common electrodes 51 signal line 52 scan lines 53 capacitor line 54 Public wiring 55 Power Cord 60 Liquid crystal elements 61 Polarizer 62 Polarizer 63 Backlight 65 coloring layers 66 light shielding layer 68 adhesive layer 70 transistors 70a transistor 70b transistor 71 conductive layer 72Semiconductor layer 73 Insulation layer 74a Conductive layer 74b Conductive layer 75 Low resistance area 76 Conductive layer 80 pixel circuit 81 Insulation layer 82 insulation layer 83 insulation layer 85 capacitor element 90 pixels 91 Circuit 102EL layer 103 common electrode 111 pixel electrodes 112 LCD 113 Common electrode 123 insulation layer 124 Spacer 130 polarizer 130a Polarizer 130b polarizer 131 Coloring Layer 132 light shielding layer 141 Adhesive layer 142 Space 143 Desiccant 151 pixel electrodes 152 LCD 153 Common electrode 161 substrate 162 substrate 171 substrate 172 substrate 201 transistor 202 transistors 203 capacitor element 204 connection 205 transistor 211 insulation layer 212 insulation layer 213 insulation layer 214 insulation layer 215 insulation layer 216 insulation layer 217 insulation layer 218 insulation layer 221 conductive layer 222 conductive layer 231Semiconductor layer 242 connection layer 243 Connector 251 adhesive layer 252 adhesive layer 601 pulse voltage output circuit 602 current detection circuit 603 capacitor 621 electrode 622 electrode 705 insulation layer 706 electrode 707 insulation layer 708 semiconductor layer 710 insulation layer 711 insulation layer 714 electrode 715 electrode 722 insulation layer 723 electrode 724a electrode 724b electrode 726 insulation layer 727 insulation layer 728 insulation layer 729 insulation layer 741 insulation layer 742Semiconductor layer 744a electrode 744b electrode 746 Electrode 755 Impurities 771 substrate 772 insulation layer 810 transistor 811 transistor 820 transistors 821 transistor 825 transistor 826 transistors 830 transistors 831 transistor 840 transistors 841 transistor 842 transistors 843 transistors 844 transistors 845 transistor 846 transistors 847 transistors 5000 frame 5001 Display 5002 Display Unit 5003 Speaker 5004LED Light 5005 operation keys 5006 connection terminal 5007 Sensor 5008 Microphone 5009 switch 5010 infrared port 5011 Recording medium reading unit 5012 bracket 5013 Remote Control Machine 5014 Antenna 5015 shutter button 5016 Receiving Department 5017 Charger 5018 watch strap 5019 strap buckle 5020 Icon 5021 Icon 6500 Touch Panel Module 6501 Circuit Unit 6502 signal line driver circuit 6503 sensor drive circuit 6504 detection circuit 6505 Timing Controller 6506 image processing circuit 6510 Touch Panel 6511 Display Unit 6512 Input 6513 scan line driver circuit 6520IC 6530IC 6531 substrate 6532 Opposing Substrate 6533FPC 6534PCB 6540CPU 7000 Display Unit 7001 Display unit 7100 mobile phone 7101 frame 7103 Operation Button 7104 External connection port 7105 Speaker 7106 Microphone 7200 TV Set 7201 frame 7203 bracket 7211 Remote Control Machine 7300 Portable Information Terminal 7301 frame 7302 Operation Button 7303 Information 7304 Information 7305 Information 7306 Information 7310 Portable Information Terminal 7320 Portable Information Terminal 7400 lighting fixtures 7401 Base 7402 Light Emitting Unit 7403 Operation switch 7410 lighting fixtures 7412 Light Emitting Unit 7420 lighting fixtures 7422 Light Emitting Unit 7500 Portable Information Terminal 7501 frame 7502 Components 7503 Operation Button 7600 Portable Information Terminal 7601 frame 7602 Hinge 7650 Portable Information Terminal 7651 Non-display part 7700 Portable Information Terminal 7701 frame 7703a Button 7703b button 7704a Speaker 7704b Speaker 7705 External connection port 7706 Microphone 7709 Battery 7800 Portable Information Terminal 7801 strap 7802 Input / Output Terminals 7803 Operation Button 7804 Icon 7805 battery 7900 Portable Information Terminal 7901 Display unit 7902 frame 7903 frame 7904 strap 7905 Operation Button 8000 Display Module 8001 cover 8002 bottom cover 8003FPC 8004 touch panel 8006 Display Panel 8007 Backlight 8008 light source 8009 Framework 8010 Printing substrate 8011 battery

Claims

1. A touch panel comprising: In-Cell touch panel; as well as Scan line driver circuit, Wherein, the In-Cell touch panel comprises: Common electrode; multiple sensor elements; Multiple pixels; multiple signal lines; and Multiple scan lines, The In-Cell touch panel has the functions of displaying images and touch sensor. A plurality of pixel electrodes in the In-Cell touch panel are arranged in a first direction and in a second direction intersecting the first direction. A plurality of touch sensor lines extend in the first direction, One of the plurality of touch sensor lines and one of the plurality of signal lines are arranged between two adjacent pixel electrodes of the plurality of pixel electrodes to be adjacent to each other and extend in the first direction, The one of the plurality of touch sensor lines and the one of the plurality of signal lines overlap with one of the plurality of scan lines extending in the second direction, and the plurality of pixel electrodes include slits in the first direction, The light shielding layer overlaps with the semiconductor layer and a gate electrode of a transistor electrically connected to one of the plurality of pixel electrodes. The one of the plurality of signal lines and the one of the plurality of touch sensor lines are formed on the same surface, The common electrode overlaps with a plurality of pixel electrodes among the plurality of pixel electrodes in the second direction, In a region between one of the two adjacent pixel electrodes among the plurality of pixel electrodes and a pixel electrode adjacent to the one of the two adjacent pixel electrodes among the plurality of pixel electrodes in the first direction, the common electrode does not overlap with the one of the two adjacent pixel electrodes among the plurality of pixel electrodes and the pixel electrode adjacent to the one of the two adjacent pixel electrodes among the plurality of pixel electrodes in the first direction, The common electrode is not arranged in a region between the one of the plurality of touch sensor lines and the one of the plurality of signal lines, and In the first direction, only one line is arranged between the one of the two adjacent pixel electrodes among the plurality of pixel electrodes and the other of the two adjacent pixel electrodes among the plurality of pixel electrodes, and the one line is used as one of the plurality of signal lines.

2. A touch panel comprising: In-Cell touch panel; as well as Scan line driver circuit, Wherein, the In-Cell touch panel comprises: Common electrode; multiple sensor elements; Multiple pixels; signal lines; and Scan line, The In-Cell touch panel has the functions of displaying images and touch sensor. The touch panel is connected to the IC, The IC includes: Circuit unit; Signal line driving circuit; a sensor driving circuit; and Detection circuit, The plurality of pixel electrodes in the In-Cell touch panel are arranged in a first direction and in a second direction intersecting the first direction. A plurality of touch sensor lines extend in the first direction, One of the plurality of touch sensor lines and the signal line are arranged between two adjacent pixel electrodes among the plurality of pixel electrodes and extend in the first direction, The one of the plurality of touch sensor lines and the signal line overlap the scan line extending in the second direction, The plurality of pixel electrodes include a plurality of slits in the first direction, The plurality of touch sensor lines are arranged alternately for each third pixel electrode of the plurality of pixel electrodes in the second direction, The light shielding layer overlaps with the semiconductor layer and a gate electrode of a transistor electrically connected to one of the plurality of pixel electrodes. The one of the plurality of pixel electrodes is on the semiconductor layer, The signal line and the one of the plurality of touch sensor lines are formed on the same surface, The common electrode overlaps with a plurality of pixel electrodes among the plurality of pixel electrodes in the second direction, In a region between one of the two adjacent pixel electrodes among the plurality of pixel electrodes and a pixel electrode adjacent to the one of the two adjacent pixel electrodes among the plurality of pixel electrodes in the first direction, the common electrode does not overlap with the one of the two adjacent pixel electrodes among the plurality of pixel electrodes and the pixel electrode adjacent to the one of the two adjacent pixel electrodes among the plurality of pixel electrodes in the first direction, The common electrode is not provided in a region between the one of the plurality of touch sensor lines and the signal line, and The light shielding layer is arranged below the semiconductor layer.

3. A display device, comprising: In-Cell touch sensor, Wherein, the display device further includes: Common electrode; Multiple pixels; A plurality of pixel electrodes arranged in a first direction and in a second direction intersecting the first direction; a plurality of touch sensor lines extending in the first direction; a plurality of signal lines extending in the first direction; and a plurality of scanning lines extending in the second direction, wherein one of the plurality of touch sensor lines and one of the plurality of signal lines are arranged between two adjacent pixel electrodes among the plurality of pixel electrodes and extend in the first direction, The one of the plurality of touch sensor lines and the one of the plurality of signal lines overlap with one of the plurality of scan lines, The plurality of pixel electrodes include first slits in the first direction, The sizes of the plurality of touch sensor lines and the sizes of the plurality of signal lines are different from each other, The one of the plurality of touch sensor lines and the other of the plurality of touch sensor lines are arranged in a manner sandwiching three pixel electrodes among the plurality of pixel electrodes without sandwiching the other of the plurality of touch sensor lines, The light shielding layer overlaps with the semiconductor layer and a gate electrode of a transistor electrically connected to one of the plurality of pixel electrodes. The one of the plurality of pixel electrodes is on the semiconductor layer, The one of the plurality of signal lines and the one of the plurality of touch sensor lines are formed on the same surface, The common electrode overlaps with the three pixel electrodes, The common electrode does not overlap with two mutually adjacent ones of the plurality of pixel electrodes in the first direction, The common electrode is not arranged in a region between the one of the plurality of touch sensor lines and the one of the plurality of signal lines, The common electrode overlaps one of the plurality of signal lines, and The light shielding layer is disposed below the semiconductor layer.

4. An In-Cell touch panel, comprising a display portion, wherein the display portion comprises: transistor; a liquid crystal element including a first pixel electrode electrically connected to one of a source electrode and a drain electrode of the transistor; a second pixel electrode adjacent to the first pixel electrode; a first signal line electrically connected to the other of the source electrode and the drain electrode of the transistor; a second signal line adjacent to the first signal line; a scan line electrically connected to the gate electrode of the transistor; as well as Touch sensor, Wherein, the transistor comprises: a semiconductor layer including a channel formation region; a gate insulating layer on the semiconductor layer; the gate electrode on the semiconductor layer; and the source electrode and the drain electrode on the gate electrode via a first insulating layer, Wherein, the liquid crystal element comprises: the first pixel electrode; and Common electrode, Wherein, the common electrode is located below the first pixel electrode, The common electrode is located above the source electrode and the drain electrode via a second insulating layer. The common electrode is electrically connected to the first wiring, The touch sensor is electrically connected to the second wiring. The common electrode has a region overlapping the first pixel electrode, the second pixel electrode, the first signal line, the second signal line, the first wiring, and the second wiring. In a plane, the first wiring and the second wiring each have a region extending in the same direction as the direction in which the first signal line extends, The first wiring and the second wiring are both located above the first insulating layer and below the second insulating layer, The first wiring and the second wiring both include the same material as the first signal line, The scanning line has a region overlapping with the first wiring, the second wiring, and the first signal line. The channel formation region of the transistor overlaps with the common electrode, and The light-shielding conductive film is located below the semiconductor layer and overlaps with the channel formation region of the transistor.

5. An In-Cell touch panel, comprising a display portion, wherein the display portion comprises: transistor; a liquid crystal element including a first pixel electrode, the first pixel element being electrically connected to one of the source electrode and the drain electrode of the transistor; a second pixel electrode adjacent to the first pixel electrode; a first signal line electrically connected to the other of the source electrode and the drain electrode of the transistor; a second signal line adjacent to the first signal line; a scan line electrically connected to the gate electrode of the transistor; as well as Touch sensor, Wherein, the transistor comprises: a semiconductor layer including a channel formation region; a gate insulating layer on the semiconductor layer; the gate electrode on the semiconductor layer; and the source electrode and the drain electrode on the gate electrode via a first insulating layer, Wherein, the liquid crystal element comprises: the first pixel electrode; and Common electrode, Wherein, the common electrode is located below the first pixel electrode, The common electrode is located above the source electrode and the drain electrode via a second insulating layer. The common electrode is electrically connected to the first wiring, The touch sensor is electrically connected to the second wiring. The common electrode has a region overlapping the first pixel electrode, the second pixel electrode, the first signal line, the second signal line, the first wiring, and the second wiring. In a plane, the first wiring and the second wiring each have a region extending in the same direction as the direction in which the first signal line extends, The first wiring and the second wiring are both located above the first insulating layer and below the second insulating layer, The first wiring and the second wiring both include the same material as the first signal line, The scanning line has a region overlapping with the first wiring, the second wiring, and the first signal line. The channel formation region of the transistor overlaps with the common electrode, a light-shielding conductive film located below the semiconductor layer and overlapping with the channel formation region of the transistor, and The semiconductor layer includes polysilicon.

6. An In-Cell touch panel, comprising a display unit, wherein the display unit comprises: transistor; a liquid crystal element including a first pixel electrode electrically connected to one of a source electrode and a drain electrode of the transistor; a second pixel electrode adjacent to the first pixel electrode; a first signal line electrically connected to the other of the source electrode and the drain electrode of the transistor; a second signal line adjacent to the first signal line; a scan line electrically connected to the gate electrode of the transistor; as well as Touch sensor, Wherein, the transistor comprises: a semiconductor layer including a channel formation region; a gate insulating layer on the semiconductor layer; the gate electrode on the semiconductor layer; and the source electrode and the drain electrode on the gate electrode via a first insulating layer, Wherein, the liquid crystal element comprises: the first pixel electrode; and Common electrode, Wherein, the common electrode is located below the first pixel electrode, The common electrode is located above the source electrode and the drain electrode via a second insulating layer. The common electrode is electrically connected to the first wiring, The touch sensor is electrically connected to the second wiring. The common electrode has a region overlapping the first pixel electrode, the second pixel electrode, the first signal line, the second signal line, the first wiring, and the second wiring. In a plane, the first wiring and the second wiring each have a region extending in the same direction as the direction in which the first signal line extends, The first wiring and the second wiring are both located above the first insulating layer and below the second insulating layer, The first wiring and the second wiring both include the same material as the first signal line, The scanning line has a region overlapping with the first wiring, the second wiring, and the first signal line. The channel formation region of the transistor overlaps with the common electrode, a light-shielding conductive film located below the semiconductor layer and overlapping with the channel formation region of the transistor, and The first wiring serves as a common wiring.

7. A touch panel comprising: a first adhesive layer on the first substrate; a second substrate on the first adhesive layer; a first transistor, a second transistor, a capacitor, and a touch sensor on the second substrate; a first insulating layer on the first transistor, the second transistor and the capacitor; a second insulating layer on the first insulating layer; a light emitting element on the second insulating layer; a second adhesive layer on the light emitting element; a third substrate on the second adhesive layer; as well as a light shielding layer below the first transistor and the capacitor, The first transistor includes a first gate electrode, a first semiconductor layer, and a first gate insulating layer between the first gate electrode and the first semiconductor layer. the second transistor includes a second semiconductor layer including an oxide semiconductor, Wherein, the touch panel further includes: a first conductive layer on the second substrate; and a second conductive layer on the first gate insulating layer, wherein the first conductive layer includes a first portion configured to function as the first gate electrode of the first transistor and a second portion configured to function as one electrode of the capacitor, The second conductive layer includes a first portion in contact with the first conductive layer and a second portion configured to function as one of a source electrode and a drain electrode of the second transistor, The light shielding layer overlaps with a channel formation region of the first semiconductor layer, the first portion and the second portion of the first conductive layer, and the first portion of the second conductive layer. The touch sensor includes a first wiring and a second wiring. In a plan view, the first wiring includes a portion parallel to the signal line, and The second wiring includes a portion parallel to the scanning line in a plan view.

8. A touch panel comprising: a first adhesive layer on the first substrate; a second substrate on the first adhesive layer; a first transistor, a second transistor, a capacitor, and a touch sensor on the second substrate; a first insulating layer on the first transistor, the second transistor and the capacitor; a second insulating layer on the first insulating layer; as well as a light shielding layer below the first transistor and the capacitor, The first transistor includes a first gate electrode, a first semiconductor layer, and a first gate insulating layer between the first gate electrode and the first semiconductor layer. the second transistor includes a second semiconductor layer including an oxide semiconductor, Wherein, the touch panel further includes: a first conductive layer on the second substrate; and a second conductive layer on the first gate insulating layer, wherein the first conductive layer includes a first portion configured to function as the first gate electrode of the first transistor and a second portion configured to function as one electrode of the capacitor, The second conductive layer includes a first portion in contact with the first conductive layer and a second portion configured to function as one of a source electrode and a drain electrode of the second transistor, the light shielding layer overlaps with a channel formation region of the first semiconductor layer, the first portion and the second portion of the first conductive layer, and the first portion of the second conductive layer, and The touch sensor includes a first wiring and a second wiring.

9. An In-Cell touch panel, comprising: Signal line; Scan line; a transistor electrically connected to the signal line and the scan line; as well as a liquid crystal element of FFS mode electrically connected to the transistor, Wherein, the transistor comprises: Semiconductor layer; the scanning line on the semiconductor layer; a first insulating layer on the scanning line; The signal line on the first insulating layer; and a first conductive layer configured to function as one of a source electrode and a drain electrode, Wherein, the liquid crystal element comprises: a pixel electrode electrically connected to the first conductive layer; Liquid crystal; and Common electrode, Wherein, the liquid crystal is controlled by the pixel electrode and the common electrode, The common electrode is arranged below the pixel electrode. The common electrode is arranged above the first conductive layer and the signal line via a second insulating layer. The common electrode overlaps with a plurality of pixel electrodes and a plurality of signal lines, The common electrode is electrically connected to the common wiring, In a plane, the common wiring extends in a first direction, In the plane, the signal line extends in the first direction, The common wiring is disposed above the first insulating layer and below the second insulating layer, and The common wiring includes the same material as the signal line.

10. An In-Cell touch panel, comprising: Signal line; Scan line; a transistor electrically connected to the signal line and the scan line; as well as a liquid crystal element of FFS mode electrically connected to the transistor, Wherein, the transistor comprises: Semiconductor layer; the scanning line on the semiconductor layer; a first insulating layer on the scanning line; The signal line on the first insulating layer; and a first conductive layer configured to function as one of a source electrode and a drain electrode, Wherein, the liquid crystal element comprises: a pixel electrode electrically connected to the first conductive layer; Liquid crystal; and Common electrode, Wherein, the liquid crystal is controlled by the pixel electrode and the common electrode, The common electrode is arranged below the pixel electrode. The common electrode is arranged above the first conductive layer and the signal line via a second insulating layer. The common electrode overlaps with a plurality of pixel electrodes and a plurality of signal lines, The common electrode is electrically connected to the common wiring, In a plane, the common wiring extends in a first direction, In the plane, the signal line extends in the first direction, The common wiring is arranged above the first insulating layer and below the second insulating layer, The common wiring and the signal line are formed of the same conductive film, and The total number of common wirings is less than the total number of signal lines.

11. An In-Cell touch panel, comprising: Signal line; Scan line; a transistor electrically connected to the signal line and the scan line; as well as a liquid crystal element of FFS mode electrically connected to the transistor, Wherein, the transistor comprises: Semiconductor layer; the scanning line on the semiconductor layer; a first insulating layer on the scanning line; The signal line on the first insulating layer; and A first conductive layer is constructed to function as one of a source electrode and a drain electrode.

Images