Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and recording medium

Abstract

The invention provides a substrate processing apparatus, a substrate processing method, a method of manufacturing a semiconductor device, and a recording medium, and provides a technology capable of suppressing thermal diffusion. The substrate processing apparatus includes: a processing chamber that processes a substrate on which a first film to which a dopant is added and a second film different from the first film are formed; an electromagnetic wave supply unit that supplies electromagnetic waves to the substrate; and a control unit configured so as to be able to control the electromagnetic wave supply unit such that supply of the electromagnetic wave is stopped before the second film is heated during heating of the dopant by the electromagnetic wave.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a recording medium. Background Art

[0002] As one of the manufacturing processes of semiconductor devices (semiconductor elements), there is a modification process represented by annealing treatment, for example, in which a substrate in a processing chamber is heated using a heating device to change the composition or crystal structure of a thin film formed on the surface of the substrate, or to repair crystal defects in the formed thin film. As a modification process method, a heat treatment method using electromagnetic waves, such as that shown in Patent Document 1, has been studied.

[0003] In conventional treatment using electromagnetic waves, heat diffusion may occur from a film to be treated to films other than the film to be treated due to heat treatment.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2015-070045 Summary of the invention

[0005] The present disclosure provides a technology capable of suppressing heat diffusion.

[0006] According to one embodiment of the present disclosure, the following technology is provided, comprising: a processing chamber, which processes a substrate formed with a first film to which a dopant is added and a second film different from the first film; an electromagnetic wave supply unit, which supplies electromagnetic waves to the substrate; and a control unit, which is configured to control the electromagnetic wave supply unit so that in the process of heating the dopant by the electromagnetic wave, the supply of the electromagnetic wave is stopped before the second film is heated.

[0007] According to the present disclosure, heat diffusion can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 The schematic structure diagram of a processing furnace portion of a substrate processing apparatus as one embodiment of the present disclosure is shown in a longitudinal cross-sectional view.

[0009] Figure 2 This is a longitudinal sectional view showing a schematic structure of a substrate processing apparatus as one embodiment of the present disclosure at the position of a processing furnace.

[0010] Figure 3 It is a transverse cross-sectional view showing a cross-sectional structure of a substrate processing apparatus as one embodiment of the present disclosure.

[0011] Figure 4 This is a schematic configuration diagram of a controller of a substrate processing apparatus as one embodiment of the present disclosure.

[0012] Figure 5This is a diagram showing an example of a waveform of a microwave power source subjected to pulse control preferably used in an embodiment of the present disclosure.

[0013] Figure 6 This is a diagram showing an example of the setting of a microwave power source preferably used in the embodiment of the present disclosure.

[0014] Figure 7 This is a diagram showing an example of a flow of substrate processing as one embodiment of the present disclosure.

[0015] Figure 8 It is a cross-sectional view showing the structure of a film on a substrate preferably used in the embodiment of the present disclosure.

[0016] Fig. 9 Yes means Figure 8 A diagram of a reaction model in a treatment target film is shown. DETAILED DESCRIPTION

[0017] Hereinafter, one mode of the present disclosure will be described with reference to the accompanying drawings. In addition, the drawings used in the following description are all schematic, and the relationship between the dimensions of the elements shown in the drawings, the ratio of the elements, etc. may not be consistent with the actual situation. In addition, the relationship between the dimensions of the elements, the ratio of the elements, etc. may not be consistent between multiple drawings. In addition, between multiple drawings, substantially the same elements are marked with the same figure numbers, and the elements are described in the drawings in which they first appear, and their descriptions are omitted in subsequent drawings unless otherwise required. Unless otherwise specified in the specification, the elements are not limited to one, and multiple elements may exist.

[0018] (1) Structure of substrate processing apparatus

[0019] The substrate processing device in this embodiment is configured as a single-wafer heat treatment device that performs various heat treatments on one or more wafers as substrates, and is described as a device that performs an annealing process (modification process) using electromagnetic waves described later. In the substrate processing device in this embodiment, a FOUP (Front Opening Unified Pod: hereinafter referred to as a wafer box) is used as a storage container (carrier) for accommodating wafers in a processing chamber. The wafer box is also used as a transport container for transporting wafers between various substrate processing devices.

[0020] like Figure 1 , Figure 2 as well as Figure 3As shown, the substrate processing apparatus 100 includes: a conveying housing 202, which has a conveying chamber 203 inside for conveying wafers 200; and housings 102-1 and 102-2 as processing containers described later, which are provided on the side walls of the conveying housing 202 and have processing chambers 201-1 and 201-2 inside for processing wafers 200. In addition, a cooling housing 109 forming a cooling chamber 204 is provided between the processing chambers 201-1 and 201-2.

[0021] On the front side of the transport housing 202, Figure 2 The right side of ( Figure 3 ), a loading port unit (LP) 106 as a wafer box opening and closing mechanism for opening and closing the cover of the wafer box 110 and moving the wafer 200 into / out of the conveying chamber 203 is arranged. The loading port unit 106 includes a shell 106a, a mounting table 106b, and an opener 106c. The mounting table 106b is configured to mount the wafer box 110 so that the wafer box 110 is close to the substrate loading and unloading port 134 formed in front of the shell of the conveying chamber 203, and the unillustrated cover provided on the wafer box 110 is opened and closed by the opener 106c. In addition, the loading port unit 106 may also have a function of purging the inside of the wafer box 110 with a purge gas such as N2 gas. In addition, the conveying shell 202 has a purge gas circulation structure described later for circulating a purge gas such as N2 in the conveying chamber 203.

[0022] On the rear side of the transport housing 202, Figure 2 The left side of ( Figure 3 Gate valves (GV) 205-1 and 205-2 for opening and closing the processing chambers 201-1 and 201-2 are respectively arranged on the upper side. A substrate transfer robot as a substrate transfer mechanism for transferring the wafer 200 and a transfer machine 125 as a substrate transfer unit are provided in the transfer chamber 203. The transfer machine 125 includes: clamps (arms) 125a-1 and 125a-2 as a loading unit for loading the wafer 200; a transfer device 125b that can rotate or move the clamps 125a-1 and 125a-2 in the horizontal direction respectively; and a transfer device elevator 125c that lifts and lowers the transfer device 125b. By continuous operation of the clamps 125a-1, 125a-2, the transfer device 125b and the transfer device elevator 125c, the wafer 200 can be loaded (charged) or unloaded (unloaded) to the substrate holder (substrate holding part) 217, the cooling chamber 204, and the wafer box 110 described later. Hereinafter, when no special distinction is required, the housing 102-1, the housing 102-2, the processing chamber 201-1, the processing chamber 201-2, the clamps 125a-1 and the clamps 125a-2 are respectively described as the housing 102, the processing chamber 201, and the clamps 125a.

[0023] The clamp 125a-1 is made of ordinary aluminum material and is used for conveying low-temperature and normal-temperature wafers. The clamp 125a-2 is made of alumina or quartz components with high heat resistance and poor thermal conductivity, and is used for conveying high-temperature and normal-temperature wafers. That is, the clamp 125a-1 is a substrate conveying unit for low temperatures, and the clamp 125a-2 is a substrate conveying unit for high temperatures. The clamp 125a-2 for high temperatures can be constructed to have a heat resistance of, for example, above 100°C, more preferably above 200°C. A mapping sensor can be provided on the clamp 125a-1 for low temperatures. By providing a mapping sensor on the clamp 125a-1 for low temperatures, it is possible to confirm the number of wafers 200 in the loading port unit 106, the number of wafers 200 in the processing chamber 201, and the number of wafers 200 in the cooling chamber 204.

[0024] In the substrate processing apparatus of this embodiment, the clamp 125a-1 is described as a low-temperature clamp and the clamp 125a-2 is described as a high-temperature clamp, but the invention is not limited thereto. The clamp 125a-1 may be made of a material such as alumina or quartz components with high heat resistance and poor thermal conductivity, and used for conveying wafers at high and normal temperatures, while the clamp 125a-2 may be made of a common aluminum material and used for conveying wafers at low and normal temperatures. In addition, both the clamps 125a-1 and 125a-2 may be made of a material such as alumina or quartz components with high heat resistance and poor thermal conductivity.

[0025] (Treatment furnace)

[0026] exist Figure 2 The area A surrounded by the dotted line has Figure 1 The processing furnace (processing chamber 201) of the substrate processing structure shown in FIG. Figure 3 As shown, in this embodiment, a plurality of processing furnaces are provided, but the structures of the processing furnaces are the same, so only one structure is described, and the description of the structure of the other processing furnace is omitted.

[0027] like Figure 1 As shown, the processing furnace has a shell 102 as a chamber (processing container) made of a material such as metal that reflects electromagnetic waves. In addition, a cover flange (closing plate) 104 made of a metal material is configured to close the upper end of the shell 102 via an O-ring as a sealing component that is omitted from the figure. The inner space of the shell 102 and the cover flange 104 is mainly configured as a processing chamber 201 for processing the wafer 200. A quartz reaction tube (not shown) that allows electromagnetic waves to pass can be set inside the shell 102, and the processing container can also be configured in a manner that the inside of the reaction tube becomes a processing chamber. In addition, the cover flange 104 can be omitted, and the processing chamber 201 can be configured using a shell 102 with a closed ceiling.

[0028] A stage 210 is provided in the processing chamber 201, and a wafer boat 217 as a substrate holder (substrate holding part) for holding a wafer 200 is placed on the upper surface of the stage 210. The wafer 200, which is a processing object, and the susceptors 103a and 103b placed vertically below the wafer 200 in a manner of sandwiching the wafer 200 are held at a predetermined interval on the wafer boat 217. The susceptors 103a and 103b are arranged above and below the wafer 200, for example, as materials such as silicon plates (Si plates) and silicon carbide plates (SiC plates), thereby suppressing the concentration of electric field intensity on the edge of the wafer 200. That is, the susceptors suppress the absorption of electromagnetic waves by the edge of the wafer. In addition, quartz plates 101a and 101b as heat insulation plates can also be held at a predetermined interval on the upper and lower surfaces of the susceptors 103a and 103b. In this embodiment, the quartz plates 101a and 101b are made of the same components, and the susceptors 103a and 103b are made of the same components. Hereinafter, when no particular distinction is required, they are referred to as the quartz plates 101 and the susceptors 103. The wafer boat 217 can hold a plurality of wafers 200. This improves processing capacity.

[0029] The shell 102 as a processing container has a circular cross section, for example, and is configured as a flat closed container. In addition, the conveying shell 202 as a lower container is composed of, for example, a metal material such as aluminum (Al), stainless steel (SUS) or quartz. In addition, sometimes the space surrounded by the shell 102 is also referred to as a processing chamber (or reaction area) 201 as a processing space, and the space surrounded by the conveying shell 202 is referred to as a conveying chamber (or conveying area) 203 as a conveying space. In addition, the processing chamber 201 and the conveying chamber 203 are not limited to being adjacent to each other in the horizontal direction as in the present embodiment, but can also be configured to be adjacent to each other in the vertical direction so that a substrate holder having a predetermined structure can be raised and lowered.

[0030] like Figure 1 , Figure 2 as well as Figure 3 As shown, a substrate loading port 206 adjacent to the gate valve 205 is provided on the side of the transport housing 202, and the wafer 200 moves between the processing chamber 201 and the transport chamber 203 via the substrate loading port 206. A choke structure having a length of 1 / 4 wavelength of the electromagnetic wave used is provided around the gate valve 205 or the substrate loading port 206 as a countermeasure against leakage of electromagnetic waves described later.

[0031] An electromagnetic wave supply unit as a heating device, which will be described in detail later, is provided on the side of the housing 102. Electromagnetic waves such as microwaves supplied from the electromagnetic wave supply unit are introduced into the processing chamber 201 to heat the wafer 200 and process the wafer 200. The electromagnetic wave supply unit is provided at a position opposite to the substrate loading and unloading port 206.

[0032] The mounting table 210 is supported by a shaft 255 as a rotation axis. The shaft 255 passes through the bottom of the processing chamber 201 and is connected to a driving mechanism 267 that performs a rotational motion outside the processing chamber 201. By operating the driving mechanism 267 to rotate the shaft 255 and the mounting table 210, the wafer 200 placed on the wafer boat 217 can be rotated. In addition, the periphery of the lower end of the shaft 255 is covered by a bellows 212, and the processing chamber 201 and the conveying area 203 are kept airtight.

[0033] Here, the mounting table 210 can also be constructed to rise or fall through the driving mechanism 267 according to the height of the substrate loading and unloading port 206 when conveying the wafer 200 so that the wafer 200 is in the wafer conveying position, and to rise or fall to the wafer 200 in the processing position (wafer processing position) in the processing chamber 201 when processing the wafer 200.

[0034] An exhaust unit for exhausting the atmosphere of the processing chamber 201 is provided below the processing chamber 201 and on the outer peripheral side of the mounting table 210. Figure 1 As shown, the exhaust part is provided with an exhaust port 221. An exhaust pipe 231 is connected to the exhaust port 221, and a pressure regulator 244 such as an APC valve that controls the valve opening according to the pressure in the processing chamber 201 and a vacuum pump 246 are sequentially connected to the exhaust pipe 231 in series.

[0035] Here, the pressure regulator 244 is not limited to an APC valve, and may be configured to use a common on-off valve and a pressure regulating valve in combination, as long as it can receive pressure information in the processing chamber 201 and a feedback signal from a pressure sensor 245 described later to adjust the exhaust volume.

[0036] The exhaust unit (also referred to as an exhaust system or exhaust line) is mainly composed of the exhaust port 221, the exhaust pipe 231, and the pressure regulator 244. In addition, the exhaust port may be arranged in a manner surrounding the mounting table 210 so that gas can be exhausted from the entire periphery of the wafer 200. In addition, the vacuum pump 246 may be included in the structure of the exhaust unit.

[0037] The cover flange 104 is provided with a gas supply pipe 232 for supplying various processing gases for substrate processing, such as an inert gas, a source gas, and a reaction gas, into the processing chamber 201 .

[0038] The gas supply pipe 232 is provided with a mass flow controller (MFC) 241 which is a flow controller (flow control unit) and a valve 243 which is an opening and closing valve in this order from the upstream.

[0039] A gas source such as nitrogen (N2) is connected to the upstream side of the gas supply pipe 232, and is supplied to the processing chamber 201 via MFC241 and valve 243. The gas supply system is mainly composed of the gas supply pipe 232, MFC241, and valve 243. A gas source may also be included in the gas supply system. In the case where multiple gases are used during substrate processing, a structure in which a gas supply pipe having an MFC as a flow controller and a valve as an opening and closing valve is connected to the gas supply pipe 232 at a position downstream of the valve 243, thereby enabling multiple gases to be supplied. A gas supply pipe having an MFC and a valve may also be provided for each gas.

[0040] The gas supply system (gas supply unit) is mainly composed of the gas supply pipe 232, the MFC 241, and the valve 243. When an inert gas is made to flow through the gas supply system, it is also referred to as an inert gas supply system.

[0041] A temperature sensor 263 as a non-contact temperature measuring device is provided on the cover flange 104. The output of a microwave oscillator 655 described later is adjusted based on the temperature information detected by the temperature sensor 263, thereby heating the substrate so that the substrate temperature has a desired temperature distribution.

[0042] The temperature sensor 263 is composed of a radiation thermometer such as an IR (Infrared Radiation) sensor. The temperature sensor 263 is configured to measure the surface temperature of the quartz plate 101a or the surface temperature of the wafer 200. In the case where a base is provided as the heating element, it can also be configured to measure the surface temperature of the base. In addition, in this embodiment, the case recorded as the temperature of the wafer 200 (wafer temperature) refers to the case of indicating the wafer temperature converted according to the temperature conversion data described later, that is, the case of the estimated wafer temperature, the case of indicating the temperature obtained by directly measuring the temperature of the wafer 200 using the temperature sensor 263, and the case of indicating both, thereby explaining.

[0043] Alternatively, the temperature sensor 263 may be used to obtain the transition of the temperature change of the quartz plate 101 or the susceptor 103 and the wafer 200 in advance, thereby storing the temperature conversion data indicating the correlation between the temperature of the quartz plate 101 or the susceptor 103 and the temperature of the wafer 200 in the storage device 121c or the external storage device 123. By generating the temperature conversion data in advance in this way, the temperature of the wafer 200 can be estimated by measuring only the temperature of the quartz plate 101, and the output of the microwave oscillator 655, that is, the heating device can be controlled based on the estimated temperature of the wafer 200.

[0044] It should be noted that as a means of measuring the temperature of the substrate, it is not limited to the radiation thermometer, and a thermocouple can be used for temperature measurement, or a thermocouple and a non-contact thermometer can be used for temperature measurement. However, when a thermocouple is used for temperature measurement, it is necessary to configure the thermocouple near the wafer 200 for temperature measurement. That is, it is necessary to configure a thermocouple in the processing chamber 201, so the thermocouple itself is heated by the microwave supplied from the microwave oscillator described later, so it is impossible to accurately measure the temperature. Therefore, it is preferred to use a non-contact thermometer as the temperature sensor 263.

[0045] The temperature sensor 263 is not limited to being provided on the cover flange 104, but may be provided on the mounting table 210. The temperature sensor 263 is not only provided directly on the cover flange 104 or the mounting table 210, but may also be configured to indirectly perform measurement by reflecting the radiated light from the measurement window provided on the cover flange 104 or the mounting table 210 using a mirror or the like. Furthermore, the temperature sensor 263 is not limited to being provided at one, but may be provided at a plurality of locations.

[0046] Electromagnetic wave introduction interfaces (microwave introduction interfaces) 653-1 and 653-2 are provided on the side wall of the housing 102. The electromagnetic wave introduction interfaces 653-1 and 653-2 are respectively connected to one end of waveguides 654-1 and 654-2 for supplying electromagnetic waves (microwaves) into the processing chamber 201. Microwave oscillators (electromagnetic wave sources, electromagnetic wave oscillators) 655-1 and 655-2, which are heating sources for supplying electromagnetic waves into the processing chamber 201 for heating, are connected to the other ends of the waveguides 654-1 and 654-2. The microwave oscillators 655-1 and 655-2 supply electromagnetic waves such as microwaves to the waveguides 654-1 and 654-2, respectively. In addition, the microwave oscillators 655-1 and 655-2 use magnetrons, klystrons, etc. Hereinafter, the electromagnetic wave introduction interfaces 653-1, 653-2, the waveguides 654-1, 654-2, and the microwave oscillators 655-1, 655-2 will be described as the electromagnetic wave introduction interface 653, the waveguide 654, and the microwave oscillator 655 when there is no need to distinguish them from each other.

[0047] The frequency of the electromagnetic wave generated by the microwave oscillator 655 is preferably controlled to be within a frequency range of 13.56 MHz or more and 24.125 GHz or less. More preferably, it is controlled to be 2.45 GHz or 5.8 GHz. Here, the frequencies of the microwave oscillators 655-1 and 655-2 can be the same or different.

[0048] In addition, in the present embodiment, two microwave oscillators 655 are described as being arranged on the side of the housing 102, but the present invention is not limited thereto, and more than one microwave oscillator may be arranged, and the microwave oscillators 655 may be arranged on different side surfaces such as opposite side surfaces of the housing 102. The microwave oscillators 655-1, 655-2, the waveguides 654-1, 654-2, and the electromagnetic wave introduction interfaces 653-1, 653-2 constitute an electromagnetic wave supply unit (also referred to as an electromagnetic wave supply unit, a microwave supply unit, or a microwave supply unit) as a heating device.

[0049] The microwave oscillators 655-1 and 655-2 are connected to the controller 121 described later. The controller 121 is connected to a temperature sensor 263 for measuring the temperature of the quartz plate 101a or 101b or the wafer 200 housed in the processing chamber 201. The temperature sensor 263 measures the temperature of the quartz plate 101 or the wafer 200 by the above method and transmits it to the controller 121, and the controller 121 controls the output of the microwave oscillators 655-1 and 655-2 to control the heating of the wafer 200. In addition, as a method of heating control based on the heating device, a method of controlling the heating of the wafer 200 by controlling the voltage input to the microwave oscillator 655, a method of controlling the heating of the wafer 200 by changing the ratio of the time when the power of the microwave oscillator 655 is turned on and the time when it is turned off, etc. can be used.

[0050] Here, the microwave oscillators 655-1 and 655-2 are controlled by the same control signal sent from the controller 121. However, the present invention is not limited to this, and the controller 121 may send independent control signals to the microwave oscillators 655-1 and 655-2 to control the microwave oscillators 655-1 and 655-2.

[0051] (Control device)

[0052] like Figure 4 As shown, the control unit (control device, control unit), i.e., the controller 121, is configured as a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0053] The storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing device, a process recipe recording the steps and conditions of the annealing (modification) treatment, etc. are stored in the storage device 121c in a readable manner. The process recipe is a combination of the controller 121 to perform each step in the substrate processing process described later and obtain a predetermined result, and functions as a program. Hereinafter, the process recipe and the control program are collectively referred to as a program. In addition, the process recipe is also referred to as a recipe.

[0054] When the term "program" is used in this specification, it may include only a process alone, only a control program alone, or both. The RAM 121b is configured as a storage area (work area) that temporarily stores programs and data read by the CPU 121a.

[0055] The I / O port 121 d is connected to the transfer machine 125 , the MFC 241 , the valve 243 , the pressure sensor 245 , the APC valve 244 , the vacuum pump 246 , the temperature sensor 263 , the drive mechanism 267 , the microwave oscillator 655 , and the like.

[0056] The CPU 121a is configured to read out a control program from the storage device 121c and execute it, and to read out a process from the storage device 121c according to input of an operation command from the input / output device 122. The CPU 121a is configured to control the transfer operation of the substrate by the transfer machine, the flow rate adjustment operation of various gases by the MFC 241, the opening and closing operation of the valve 243, the pressure adjustment operation by the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, the output adjustment operation of the microwave oscillator 655 based on the temperature sensor 263, the on / off operation of the microwave output from the microwave oscillator 655, the rotation and rotation speed adjustment operation or the lifting and lowering operation of the mounting table 210 (or the wafer boat 217) by the drive mechanism 267, etc. according to the contents of the read process.

[0057] The controller 121 can be configured by installing the program stored in an external storage device (e.g., a magnetic disk such as a hard disk, an optical disk such as a CD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 123 into a computer. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, they are also collectively referred to as recording media. In the case where the term recording medium is used in this specification, there is a case where only the storage device 121c monomer is included, a case where only the external storage device 123 monomer is included, or a case where both are included. In addition, instead of using the external storage device 123, a communication means such as the Internet or a dedicated line can be used to provide the program to the computer.

[0058] like Figure 5 As shown, the microwave oscillator 655 supplies electromagnetic waves in a pulsed state, which is turned on for a first predetermined time (T1) and turned off for a second predetermined time (T2). The first predetermined time and the second predetermined time are variable. For example, the pulse frequency can be set to 1 to 100 kHz. In other words, the pulse period (T = T1 + T2) can be set to 10 microseconds to 1 second. In addition, for example, the duty cycle (D = T1 / T) can be set to 10% to 90%. Through this setting, the electromagnetic wave with a power supply frequency (for example, 2.45 GHz) is output, and the output power per unit time is reduced according to the value of the duty cycle.

[0059] The pulse frequency and duty cycle of the electromagnetic wave output from the microwave oscillator 655 can be set from the input / output device 122. In this setting, Figure 6 As shown, the operator first confirms the parameter setting, then enters the pulse value (pulse frequency) and duty cycle, and finally confirms the power output.

[0060] (2) Substrate processing steps

[0061] The processing furnace using the substrate processing apparatus 100 is used as a process in the manufacturing process of a semiconductor device (element). Figure 7 The illustrated process flow explains an example of a method for modifying (crystallizing) the process target film FL1 formed on the wafer 200 and being a target of a heat treatment (modification process).

[0062] like Figure 8 As shown, an oxide film FL2 as a second film and a processing object film FL1 as a first film are formed on the wafer 200. The processing object film FL1 is, for example, an amorphous silicon (Si) film to which a dopant (impurity) is added. The dopant is, for example, phosphorus (P) or boron (B). The silicon film to which P is added (doped) is called a P-doped-Si film. The oxide film FL2 is, for example, a silicon oxide film (SiO film).

[0063] In addition, the SiO film is a film formed by making the reaction chamber an oxygen atmosphere and diffusing oxygen (O) to the surface of the silicon substrate. In addition, the P-doped-Si film is a film into which P (phosphorus) is ion-implanted. These SiO films and P-doped-Si films are formed on the wafer 200 by a substrate processing device different from the above-mentioned substrate processing device 100, for example, by a batch-type substrate processing device and an ion implantation device.

[0064] In the following description, the operations of the various components constituting the substrate processing apparatus 100 are controlled by the controller 121. In addition, similarly to the above-described processing furnace structure, in the substrate processing step of this embodiment, regarding the processing content, that is, the process, the same process is used in a plurality of processing furnaces, and therefore only the substrate processing step using one processing furnace is described, and the description of the substrate processing step using another processing furnace is omitted.

[0065] The term "wafer" used in this specification sometimes refers to the wafer itself, and sometimes refers to a stack of a wafer and a predetermined layer or film formed on its surface. The term "surface of the wafer" used in this specification may refer to the surface of the wafer itself, or to the surface of a predetermined layer, etc. formed on the wafer. When it is stated in this specification that "a predetermined layer is formed on the wafer", it may mean that the predetermined layer is directly formed on the surface of the wafer itself, or it may mean that the predetermined layer is formed on a layer, etc. formed on the wafer. The use of the term "substrate" in this specification is also synonymous with the use of the term "wafer".

[0066] First, after the substrate removal process (S801), the substrate loading process (S802) is performed, and the wafer 200 is loaded (wafer boat loaded) into the predetermined processing chamber 201 by opening and closing the gate valve 205. That is, two wafers placed on the low temperature clamp 125a-1 and the high temperature clamp 125a-2 are loaded into the processing chamber 201.

[0067] (Furnace pressure / temperature adjustment step (S803))

[0068] After the wafer 200 is loaded into the processing chamber 201, the atmosphere in the processing chamber 201 is controlled to a predetermined pressure (e.g., 10 Pa to 102000 Pa). Specifically, while exhausting the atmosphere by the vacuum pump 246, the valve opening of the pressure regulator 244 is feedback-controlled based on the pressure information detected by the pressure sensor 245, so that the pressure in the processing chamber 201 is at the predetermined pressure.

[0069] In addition, the expression of a numerical range such as "10Pa to 102000Pa" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "10Pa to 102000Pa" means "10Pa or more and 102000Pa or less". The same applies to other numerical ranges.

[0070] (Inert Gas Supplying Step (S804))

[0071] When the pressure and temperature in the processing chamber 201 are controlled to predetermined values ​​through the furnace pressure and temperature adjustment step S803, the drive mechanism 267 rotates the shaft 255, and rotates the wafer 200 via the wafer boat 217 on the mounting table 210. At this time, an inert gas such as nitrogen is supplied through the gas supply pipe 232 (S804). Furthermore, at this time, the pressure in the processing chamber 201 is a predetermined value in the range of 10 to 102000 Pa, for example, adjusted to 101300 to 101650 Pa. In addition, the shaft can also be rotated during the substrate loading step S402, that is, after the wafer 200 is loaded into the processing chamber 201.

[0072] As the inert gas, in addition to nitrogen (N 2 ), for example, a rare gas such as argon (Ar), helium (He), neon (Ne), or xenon (Xe) can be used.

[0073] (Preheating step (S805))

[0074] Next, when the pressure in the processing chamber 201 is set to a predetermined value, the microwave oscillator 655 supplies microwaves into the processing chamber 201 via the above-mentioned components. The microwave output is smaller than the microwave output in the modification step described later, and the on time of the microwave supply and the off time shorter than the on time are repeated for a predetermined number of times or a predetermined time to perform a preheating process for heating the wafer 200. Thus, by slowly increasing the temperature of the wafer, it is possible to prevent the wafer from warping and cracking.

[0075] (Modification Step (S806))

[0076] While maintaining a predetermined pressure in the processing chamber 201, the microwave oscillator 655 supplies microwaves into the processing chamber 201 via the various parts described above to process the wafer 200 (perform a modification process). The microwave performs microwave pulse irradiation that repeats the following operations: the microwave supply is disconnected before heat conduction, and the microwave supply is turned on to maintain temperature rise and heating (thermal balance). In other words, the temperature rise rate is suppressed, and heating is performed while maintaining thermal balance until internal heat conduction (selective heating and internal heating). If the continuous irradiation time of microwaves is long, heating based on Joule heating (heat conduction) is dominant, but internal heat conduction can be suppressed by microwave pulse irradiation. Since the on-time and off-time of the microwave supply can be changed, the on / off can be repeated in a shorter cycle. Therefore, since the thermal equilibrium state is maintained, it is expected that the heating selectivity can be maintained. In order to suppress heat diffusion, the on-time is preferably on the order of 1 microsecond. The controller 121 is configured to control the microwave oscillator 655 so as to turn on the microwave pulse irradiation to heat the dopant in the process target film FL1 by microwave pulse irradiation and turn off the microwave irradiation before the oxide film FL2 is heated, that is, to not heat the oxide film FL2.

[0077] For example, the frequency of the microwave power supply is 2.45 GHz. For example, the on time of the microwave supply and the off time longer than the on time are repeated for a predetermined number of times or a predetermined time to heat the wafer 200. Here, it is preferred that the on time is greater than 0.6 microseconds and less than 10 microseconds. If the on time is less than 0.6 microseconds, the heating is insufficient and the dopant is not activated. When the on time is more than 10 microseconds, heating becomes dominant due to heat conduction.

[0078] As the processing target film FL1 to which the dopant is added by ion implantation, a P-doped-Si film is used as an example. Fig. 9 The reaction model is explained. In the P-doped-Si film, not only unbonded parts are formed (Si around the V surrounded by the dotted circle and P as a dopant are unbonded), but also dipole DP is formed at the same time. If microwaves are supplied, dipole DP exists in the P-doped-Si film, so P can be activated by microwave heating. The dipole DP gradually decreases by the energy of the microwave, and the unbonded part is gradually replenished. Due to the activation of P, the dipole DP disappears, so it is impossible to heat with the same energy. In other words, due to the self-limitation, activation continues only when the heating is insufficient. Therefore, only P is activated by microwave heating, and the diffusion of impurities caused by heat conduction is suppressed. In other words, thermal diffusion is suppressed, and only the processing object film FL1 can be heated without heating the oxide film FL2.

[0079] (Substrate unloading step (S807))

[0080] After the pressure in the processing chamber 201 is returned to atmospheric pressure, the gate valve 205 is opened to spatially connect the processing chamber 201 with the transfer chamber 203. Then, the heated (processed) wafer 200 placed on the wafer boat 217 is unloaded to the transfer chamber 203 by the high temperature clamp 125a-2 of the transfer machine 125 (S807).

[0081] (Substrate Cooling Step (S808))

[0082] A heated (processed) wafer 200 moved out by the high-temperature clamp 125a-2 is moved to the cooling chamber 204 through the continuous action of the transfer device 125b and the transfer device elevator 125c, and two wafers 200 are placed in the cooling chamber 108 by the high-temperature clamp 125a-2 and cooled by being placed for a predetermined time (S808).

[0083] (Substrate Accommodation Process (S809))

[0084] The two wafers 200 cooled in the substrate cooling step S808 are taken out of the cooling chamber 108 and transported to a predetermined wafer cassette.

[0085] In the above, a process of manufacturing a semiconductor device is recorded, but it is not limited to this and can also be applied to the technology of processing substrates such as pattern forming processing in the manufacturing process of liquid crystal panels, pattern forming processing in the manufacturing process of solar cells, and pattern forming processing in the manufacturing process of power devices.

[0086] In addition, the present disclosure is not limited to the above-described embodiments, and includes various modified examples. For example, the above-described embodiments are described in detail to explain the present disclosure in an easy-to-understand manner, and are not limited to necessarily having all the described structures.

[0087] Furthermore, the above-mentioned structures, functions, controllers as control units, etc. are described with a focus on the example of generating a program to realize part or all of them, but of course, part or all of them can also be realized by hardware, such as by designing an integrated circuit, etc. That is, all or part of the functions of the processing unit can also be realized by an integrated circuit such as ASIC (Application Specific Integrated Circuit) or FPGA (Field Programmable Gate Array) instead of a program.

[0088] In the above-described method, an example of forming a film using a single-piece substrate processing device that processes one or more substrates at a time is described. The present disclosure is not limited to the above-described method, and can be appropriately applied, for example, when a film is formed using a batch-type substrate processing device that processes multiple substrates at a time. In addition, in the above-described method, an example of forming a film using a substrate processing device having a cold-wall type processing furnace is described. The present disclosure is not limited to the above-described method, and can be appropriately applied when a film is formed using a substrate processing device having a hot-wall type processing furnace.

[0089] When these substrate processing apparatuses are used, each process can be performed in the same process steps and process conditions as those in the above-described embodiment, and the same effects as those in the above-described embodiment can be obtained.

[0090] Description of Reference Numerals

[0091] 100 substrate processing equipment,

[0092] 121 controller (control unit),

[0093] 201 treatment room,

[0094] 655-1, 655-2 microwave oscillator (electromagnetic wave oscillator).

Claims

1. A substrate processing device, characterized in that: The substrate processing device comprises: a processing chamber for processing a substrate on which a first film to which a dopant is added and a second film different from the first film are formed; an electromagnetic wave supplying unit that supplies electromagnetic waves to the substrate; and The control unit is configured to control the electromagnetic wave supply unit so that, in the process of heating the dopant by the electromagnetic wave, the supply of the electromagnetic wave is stopped before the second film is heated.

2. The substrate processing device according to claim 1, characterized in that: The electromagnetic wave is in a pulse shape which is turned on for a first predetermined time and turned off for a second predetermined time.

3. The substrate processing device according to claim 2, characterized in that: The second predetermined time is longer than the first predetermined time.

4. The substrate processing device according to claim 2, characterized in that: The first predetermined time and the second predetermined time can be changed.

5. The substrate processing device according to claim 2, characterized in that: The first predetermined time is set not to be less than 0.6 μsec.

6. The substrate processing apparatus according to claim 1, wherein: The dopant has a dipole.

7. The substrate processing device according to claim 6, characterized in that: The dopant is at least boron or phosphorus.

8. The substrate processing device according to claim 7, characterized in that: At least the boron or the phosphorus is ion-implanted into the first film.

9. The substrate processing apparatus according to claim 1, wherein: At least a silicon film is formed on the first film.

10. The substrate processing apparatus according to claim 9, wherein: At least an oxide film is formed on the second film.

11. The substrate processing apparatus according to claim 1, wherein: The first film is formed on the second film.

12. The substrate processing apparatus according to claim 1, wherein: The electromagnetic waves are microwaves.

13. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus includes a substrate holding portion capable of holding a plurality of the substrates.

14. The substrate processing apparatus according to claim 1, wherein: The electromagnetic wave supplying part is disposed on a side surface of the processing chamber.

15. The substrate processing apparatus according to claim 14, characterized in that: A loading and unloading port for loading and unloading the substrate is provided at a position opposite to the electromagnetic wave supplying unit.

16. A substrate processing method, characterized in that: The following processes are available: a step of supplying electromagnetic waves to a substrate on which a first film to which a dopant is added and a second film different from the first film are formed; and A step of stopping supply of the electromagnetic wave before the second film is heated during heating of the dopant by the electromagnetic wave.

17. A method for manufacturing a semiconductor device, characterized in that: This manufacturing method uses the substrate processing method of claim 16.

18. A computer-readable recording medium having a program recorded thereon, characterized in that: The program causes the substrate processing device to execute the following steps through a computer: a step of supplying an electromagnetic wave to a substrate on which a first film to which a dopant is added and a second film different from the first film are formed; and In the process of heating the dopant by the electromagnetic wave, the step of stopping the supply of the electromagnetic wave before the second film is heated.

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