Flow control unit for temperature adjustment and semiconductor manufacturing apparatus

Abstract

When the present temperature of the temperature-adjusting fluid after circulation is lower than the second temperature T12, the temperature of the temperature-adjusting fluid is adjusted by a first temperature control value C11 indicating a temperature (fourth temperature T14) higher than the second temperature T12 until the present temperature rises to a predetermined threshold value (third temperature T13) lower than the second temperature T12, and the temperature of the temperature-adjusting fluid is adjusted by a second temperature control value C12 indicating a temperature (fourth temperature T14) higher than the second temperature T12 until the present temperature rises to a predetermined threshold value (third temperature T13) lower than the second temperature T12. The temperature of the temperature control fluid is adjusted by a second temperature control value (C12) indicating the same temperature as the second temperature (T12) until the current temperature rises to a threshold value (third temperature (T13)).

Description

Technical Field

[0001] The present invention relates to a flow control unit for temperature adjustment, which adjusts the temperature of a base included in a semiconductor manufacturing device from a predetermined first temperature to a predetermined second temperature by circulating a temperature adjustment fluid in the base, and to a semiconductor manufacturing device including such a flow control unit for temperature adjustment. Background Art

[0002] In the reactive ion etching (RIE) type plasma processing device used in semiconductor manufacturing, a processing gas is introduced into a processing container while the wafer is held on a susceptor in the processing container, and the wafer is etched. In the etching process, when multiple processing gases are used, different processing conditions are set for each processing gas. The processing conditions also include the temperature of the wafer to be processed. In order to make the temperature of the wafer meet the processing conditions, the temperature of the susceptor holding the wafer is controlled.

[0003] Here, as a technology for controlling the temperature of the susceptor, as disclosed in Patent Document 1, a temperature regulating flow control unit is known that regulates the temperature of the susceptor by circulating a temperature regulating fluid through the susceptor. Figure 6 As shown, the temperature of the susceptor is adjusted. Figure 6 1 is a graph showing the relationship between the temperature of the temperature-adjusting fluid and the temperature of the base in the temperature-adjusting flow control unit of the related conventional technology. Waveform C4 is a temperature control value for controlling the temperature of the temperature-adjusting fluid when the temperature of the base is adjusted to the second temperature T12. Waveform W71 shows the temperature change of the temperature-adjusting fluid input to the base by the temperature-adjusting flow control unit. Waveform W81 shows the temperature change of the base.

[0004] For example, when the temperature of the susceptor is increased from a first temperature T11 to a second temperature T12 which is only ΔTa higher than the first temperature T11 in order to switch the processing gas, a flow control unit for temperature adjustment in the prior art is used. Figure 6 As shown in the waveform C4 of FIG. 1 , a temperature control value is generated in such a manner as to indicate that the temperature of the temperature control fluid is the same as the second temperature T12. Then, based on this temperature control value, the temperature of the temperature control fluid input to the susceptor is controlled to be the same as the second temperature T12 of the susceptor (waveform W71). As a result, since the susceptor is heated by the temperature control fluid at the second temperature T12, the temperature of the susceptor rises to the second temperature T12 over time (waveform W81). [Prior art literature] [Patent Document]

[0005] [Patent Document 1] Japanese Patent Publication No. 2020-160731 Summary of the invention [Problems to be solved by the invention]

[0006] The conventional temperature adjustment flow control unit has a problem in that it takes time to adjust the temperature of the base. Figure 7 is the time ( Figure 6 For example, a value of 25 seconds when ΔTa is 30°C and the target temperature (second temperature T12) is 40°C means that the time ΔXf is 25 seconds when the temperature of the susceptor is increased by 30°C to reach 40°C (that is, when the temperature of the susceptor is increased from 10°C to 40°C). Moreover, the case where ΔTa is 30°C and 40°C is shown, because in the processing conditions of general etching processing, there are many cases where ΔTa is 30 to 40°C, so it is just an example.

[0007] When ΔTa is 30℃ or 40℃, the time ΔXf is as follows Figure 7 If the same time is required for each switch of the processing gas, the time will accumulate according to the type of processing gas or the number of processing conditions, and the etching process of a wafer will lose several minutes, which may reduce the efficiency of semiconductor manufacturing.

[0008] The present invention is in view of the above problems and aims to provide a flow control unit for temperature adjustment that can quickly adjust the temperature of a susceptor. [Technical means to solve the problem]

[0009] In order to solve the above-mentioned problems, a flow control unit for temperature adjustment in one aspect of the present invention has the following structure.

[0010] A flow control unit for temperature adjustment, which adjusts the temperature of a susceptor from a predetermined first temperature to a predetermined second temperature by circulating a temperature adjustment fluid in a susceptor included in a semiconductor manufacturing device, comprises an output pipe, a first temperature measuring unit, an input pipe, a control device, a fluid control unit, and a second temperature measuring unit. The output pipe outputs the temperature adjustment fluid toward the susceptor. The first temperature measuring unit measures the temperature of the temperature adjustment fluid output from the output pipe. The input pipe inputs the circulated temperature adjustment fluid that is output from the output pipe toward the susceptor and circulates in the susceptor. The control device generates a temperature control value indicating the temperature of the temperature adjustment fluid output from the output pipe. The fluid control unit adjusts the temperature of the temperature adjustment fluid output from the output pipe based on the temperature control value. The second temperature measuring unit measures the current temperature of the circulated temperature adjustment fluid. The temperature control value includes a predetermined first temperature control value indicating a temperature higher than the second temperature, and a second temperature control value indicating a temperature equal to the second temperature. The fluid control unit, when the current temperature is lower than the second temperature, performs a first adjustment of the temperature of the temperature control fluid by using the first temperature control value until the current temperature rises to a predetermined threshold value lower than the second temperature, and performs a second adjustment of the temperature of the temperature control fluid by using the second temperature control value until the current temperature rises to the threshold value.

[0011] Furthermore, in the above-mentioned flow rate control unit for temperature adjustment, preferably, in the above-mentioned second adjustment, the above-mentioned temperature control value is gradually changed from the above-mentioned first temperature control value to the above-mentioned second temperature control value.

[0012] Furthermore, in the above-mentioned flow control unit for temperature adjustment, it is preferred that the above-mentioned fluid control unit includes a low-temperature pipe, a high-temperature pipe, and a spool valve. The above-mentioned low-temperature pipe flows with a low-temperature fluid for lowering the temperature of the above-mentioned temperature adjustment fluid. The above-mentioned high-temperature pipe flows with a high-temperature fluid for raising the temperature of the above-mentioned temperature adjustment fluid. The above-mentioned spool valve is connected to the above-mentioned output pipe, the above-mentioned input pipe, the above-mentioned low-temperature pipe, and the above-mentioned high-temperature pipe. The above-mentioned spool valve is used to control the flow distribution ratio of the above-mentioned temperature adjustment fluid after the circulation, the above-mentioned low-temperature fluid, and the above-mentioned high-temperature fluid, and to adjust the temperature of the above-mentioned temperature adjustment fluid output from the above-mentioned output pipe.

[0013] In the temperature regulating flow control unit, the input pipe preferably includes a pump. The pump circulates the temperature regulating fluid. The second temperature measuring unit is provided upstream of the pump.

[0014] In the temperature adjustment flow control unit, it is preferred that the temperature adjustment flow control unit further comprises a connecting pipe connecting the input pipe and the base. The second temperature measuring unit is provided in the connecting pipe.

[0015] The above-mentioned temperature adjustment flow control unit measures the current temperature of the circulating temperature control fluid by means of the second temperature measuring unit. The circulating temperature control fluid is the temperature control fluid after circulating the susceptor, so the temperature can be regarded as the temperature of the susceptor. For example, the susceptor in a reactive ion etching type plasma processing device is difficult to directly measure the temperature due to the influence of the plasma-generated processing gas. In contrast, by measuring the current temperature of the circulating temperature control fluid after circulating the susceptor, the temperature of the susceptor can be stably monitored.

[0016] Furthermore, the temperature regulating flow control unit adjusts the temperature of the temperature regulating fluid (the temperature of the base) after the circulation to a predetermined second temperature in order to adjust the temperature of the base to a predetermined second temperature, when the current temperature of the temperature regulating fluid after the circulation (that is, the temperature of the base) is lower than the second temperature. The temperature of the temperature regulating fluid is adjusted by a predetermined first temperature control value indicating a temperature higher than the second temperature (first adjustment) by raising the current temperature of the temperature regulating fluid (the temperature of the base) after the circulation to a predetermined threshold value lower than the second temperature. Thus, the base is heated by the temperature regulating fluid having a temperature higher than the second temperature, and the temperature of the base rises rapidly from the first temperature to the second temperature. Then, when the current temperature of the temperature regulating fluid (the temperature of the base) after the circulation rises to the threshold value, the temperature of the base can be stabilized at the second temperature because the temperature of the temperature regulating fluid is adjusted by the second temperature control value indicating a temperature equal to the second temperature (second adjustment).

[0017] Here, the predetermined first temperature control value is described. The higher the first temperature control value is set than the second temperature, the faster the temperature of the susceptor rises from the first temperature to the second temperature. Therefore, the first temperature control value is appropriately set corresponding to the target time taken to raise the temperature of the susceptor from the first temperature to the second temperature.

[0018] Furthermore, the predetermined threshold values ​​for the predetermined first temperature and the predetermined second temperature are described. For example, in the step of performing etching processing on a wafer by a plasma processing apparatus of a reactive ion etching type, when the processing condition is changed from the first condition to the second condition in order to switch the processing gas, the predetermined first temperature is the target temperature of the susceptor in the first condition, and the predetermined second temperature is the target temperature of the susceptor in the second condition. Furthermore, the so-called predetermined threshold value means that when changing from the first condition to the second condition, it is set to a temperature at which processing can be started according to the second condition even before the temperature of the susceptor reaches the second temperature.

[0019] Furthermore, a temperature adjustment flow control unit in another aspect of the present invention has the following structure.

[0020] A flow control unit for temperature adjustment, which adjusts the temperature of a susceptor from a predetermined first temperature to a predetermined second temperature by circulating a temperature adjustment fluid in a susceptor included in a semiconductor manufacturing device, comprises an output pipe, a first temperature measuring unit, an input pipe, a control device, a fluid control unit, and a second temperature measuring unit. The output pipe outputs the temperature adjustment fluid toward the susceptor. The first temperature measuring unit measures the temperature of the temperature adjustment fluid output from the output pipe. The input pipe inputs the circulated temperature adjustment fluid that is output from the output pipe toward the susceptor and circulates in the susceptor. The control device generates a temperature control value indicating the temperature of the temperature adjustment fluid output from the output pipe. The fluid control unit adjusts the temperature of the temperature adjustment fluid output from the output pipe based on the temperature control value. The second temperature measuring unit measures the current temperature of the circulated temperature adjustment fluid. The temperature control value includes a predetermined first temperature control value indicating a temperature lower than the second temperature, and a second temperature control value indicating a temperature equal to the second temperature. The fluid control unit, when the current temperature is higher than the second temperature, performs a first adjustment of the temperature of the temperature control fluid by using the first temperature control value until the current temperature drops to a predetermined threshold value higher than the second temperature, and performs a second adjustment of the temperature of the temperature control fluid by using the second temperature control value until the current temperature drops to the threshold value.

[0021] Furthermore, in the above-mentioned flow rate control unit for temperature adjustment, preferably, in the above-mentioned second adjustment, the above-mentioned temperature control value is gradually changed from the above-mentioned first temperature control value to the above-mentioned second temperature control value.

[0022] Furthermore, in the above-mentioned flow control unit for temperature adjustment, it is preferred that the above-mentioned fluid control unit includes a low-temperature pipe, a high-temperature pipe, and a spool valve. The above-mentioned low-temperature pipe flows with a low-temperature fluid for lowering the temperature of the above-mentioned temperature adjustment fluid. The above-mentioned high-temperature pipe flows with a high-temperature fluid for raising the temperature of the above-mentioned temperature adjustment fluid. The above-mentioned spool valve is connected to the above-mentioned output pipe, the above-mentioned input pipe, the above-mentioned low-temperature pipe, and the above-mentioned high-temperature pipe. The above-mentioned spool valve is used to control the flow distribution ratio of the above-mentioned temperature adjustment fluid after the circulation, the above-mentioned low-temperature fluid, and the above-mentioned high-temperature fluid, and to adjust the temperature of the above-mentioned temperature adjustment fluid output from the above-mentioned output pipe.

[0023] In the temperature regulating flow control unit, the input pipe preferably includes a pump. The pump circulates the temperature regulating fluid. The second temperature measuring unit is provided upstream of the pump.

[0024] In the temperature adjustment flow control unit, it is preferred that the temperature adjustment flow control unit further comprises a connecting pipe connecting the input pipe and the base. The second temperature measuring unit is provided in the connecting pipe.

[0025] The above-mentioned temperature adjustment flow control unit measures the current temperature of the circulating temperature control fluid by means of the second temperature measuring unit. The circulating temperature control fluid is the temperature control fluid after circulating the susceptor, so the temperature can be regarded as the temperature of the susceptor. For example, the susceptor in a reactive ion etching type plasma processing device is difficult to directly measure the temperature due to the influence of the plasma-generated processing gas. In contrast, by measuring the current temperature of the circulating temperature control fluid after circulating the susceptor, the temperature of the susceptor can be stably monitored.

[0026] Furthermore, the temperature regulating flow control unit adjusts the temperature of the temperature regulating fluid (the temperature of the base) after the circulation to a predetermined second temperature in order to adjust the temperature of the base to a predetermined second temperature, when the current temperature of the temperature regulating fluid after the circulation (that is, the temperature of the base) is higher than the second temperature. The temperature of the temperature regulating fluid is adjusted by a predetermined first temperature control value indicating a temperature lower than the second temperature (first adjustment) by lowering the current temperature of the temperature regulating fluid (the temperature of the base) after the circulation to a predetermined threshold value higher than the second temperature. Thus, the base is cooled by the temperature regulating fluid having a temperature lower than the second temperature, and the temperature of the base is rapidly reduced from the first temperature to the second temperature. Then, when the current temperature of the temperature regulating fluid (the temperature of the base) after the circulation is reduced to the threshold value, the temperature of the base can be stabilized at the second temperature because the temperature of the temperature regulating fluid is adjusted by the second temperature control value indicating a temperature equal to the second temperature (second adjustment).

[0027] Here, the predetermined first temperature control value is described. The lower the first temperature control value is set than the second temperature, the faster the temperature of the susceptor decreases from the first temperature to the second temperature. Therefore, the first temperature control value is appropriately set corresponding to the target time taken to decrease the temperature of the susceptor from the first temperature to the second temperature.

[0028] Furthermore, the predetermined first temperature, the predetermined second temperature, and the predetermined threshold value are explained. For example, in the case of performing etching processing on a wafer by a plasma processing apparatus of a reactive ion etching type, when the processing condition is changed from the first condition to the second condition in order to switch the processing gas, the predetermined first temperature is the target temperature of the susceptor in the first condition, and the predetermined second temperature is the target temperature of the susceptor in the second condition. Furthermore, the so-called predetermined threshold value means that when changing from the first condition to the second condition, it is set to a temperature at which processing can be started according to the second condition even before the temperature of the susceptor reaches the second temperature.

[0029] Furthermore, in order to solve the above-mentioned problem, a semiconductor manufacturing device in one aspect of the present invention includes the above-mentioned susceptor and the above-mentioned temperature adjustment flow control unit connected to the above-mentioned susceptor. [Effects of the Invention]

[0030] According to the temperature adjustment flow control unit and the semiconductor manufacturing apparatus of the present invention, the temperature of the susceptor can be adjusted quickly. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a circuit diagram of a flow control unit for temperature adjustment according to an embodiment of the present invention. Figure 2 This is a graph showing the relationship between the temperature of the temperature regulating fluid and the temperature of the temperature regulating fluid after circulation (that is, the temperature of the susceptor) in the temperature regulating flow rate control unit according to the first embodiment. Figure 3 1 is a graph showing the relationship between the temperature of the temperature regulating fluid and the temperature of the temperature regulating fluid after circulation (that is, the temperature of the susceptor) in the temperature regulating flow rate control unit according to the second embodiment. Figure 4 This is a table that summarizes the time it takes for the temperature of the susceptor to reach the second temperature for each value of ΔTa, the difference between the first temperature and the second temperature. Figure 5 1 is a graph showing the relationship between the temperature of the temperature regulating fluid and the temperature of the temperature regulating fluid after circulation (that is, the temperature of the susceptor) in the temperature regulating flow rate control unit according to the third embodiment. Figure 6 This is a graph showing the relationship between the temperature of the temperature regulating fluid and the temperature of the base in a temperature regulating flow control unit according to the prior art. Figure 7 This is a table that integrates the time until the temperature of the susceptor reaches the second temperature for each value of the difference ΔTa between the first temperature and the second temperature in a conventional temperature adjustment flow rate control unit. DETAILED DESCRIPTION

[0032] (First embodiment) A first embodiment of the temperature regulating flow rate control unit according to the present invention will be described in detail with reference to the drawings.

[0033] (For the outline structure) Figure 1 This is a circuit diagram of a temperature adjustment flow control unit 1 (hereinafter also referred to as "unit 1") according to an embodiment of the present invention. The unit 1 of this embodiment is used in a temperature control system 1001 for controlling the temperature of a semiconductor manufacturing apparatus 1000, for example.

[0034] The semiconductor manufacturing apparatus 1000 of this embodiment is configured as a reactive ion etching (RIE) type plasma processing apparatus. In the semiconductor manufacturing apparatus 1000, a wafer W is placed on a susceptor 1002 disposed in a processing container (not shown), and an etching process is performed on the wafer W controlled at a predetermined temperature.

[0035] In etching processing, when multiple processing gases are used, different processing conditions are set for each processing gas. The processing conditions also include the temperature of the wafer W to be processed. In order to make the temperature of the wafer W meet the processing conditions, the temperature of the susceptor 1002 holding the wafer W is controlled by the temperature control system 1001.

[0036] The temperature control system 1001 includes a temperature adjustment section 1003 (hereinafter referred to as “temperature adjustment section 1003 ”), a unit 1 , and a cooler unit 1004 .

[0037] The temperature control unit 1003 is provided inside the base 1002, and circulates the temperature control fluid output from the temperature control flow control unit 1 in the base 1002. The temperature control fluid is a fluorine-based inert fluid whose physical properties change less in a wide temperature range. For example, the temperature control fluid is an electronic fluoride liquid (Fluorinert) manufactured by 3M.

[0038] The chiller unit 1004 includes a cold chiller 1020 and a hot chiller 1010. The cold chiller 1020 circulates a low-temperature fluid controlled at, for example, -30°C in order to lower the temperature of the temperature-regulating fluid. The circulating pressure of the low-temperature fluid is controlled by a low-temperature side control valve 1023. The hot chiller 1010 circulates a high-temperature fluid controlled at, for example, 120°C in order to raise the temperature of the temperature-regulating fluid. The circulating pressure of the high-temperature fluid is controlled by a high-temperature side control valve 1013.

[0039] The unit 1 includes a first combined pipe 1005 for outputting the temperature-regulating fluid after circulating the base 1002 (hereinafter referred to as the temperature-regulating fluid after circulation), and a second combined pipe 1006 for inputting the temperature-regulating fluid into the base 1002. The unit 1 is connected to the base 1002 via the first combined pipe 1005 and the second combined pipe 1006.

[0040] The unit 1 includes an input pipe 3 connected to the first combined pipe 1005, an output pipe 4 connected to the second combined pipe 1006, a low-temperature fluid input pipe 5 and a low-temperature fluid output pipe 6 through which a low-temperature fluid flows, a high-temperature fluid input pipe 7 and a high-temperature fluid output pipe 8 through which a high-temperature fluid flows, a pump 14 for circulating a temperature regulating fluid, a fluid control unit 24, and a control device 1030. The low-temperature fluid input pipe 5 and the low-temperature fluid output pipe 6 are examples of low-temperature pipes. The high-temperature fluid input pipe 7 and the high-temperature fluid output pipe 8 are examples of high-temperature pipes.

[0041] In the input pipe 3 , the third filter block 43 , the buffer tank 12 , and the pump 14 are arranged in this order from the upstream side.

[0042] In the input piping 3, the post-circulation temperature-control fluid is input from the first combined piping 1005. Here, the first combined piping 1005 is provided with a second temperature sensor 61 (an example of a second temperature measuring unit), and the current temperature of the post-circulation temperature-control fluid can be measured. The temperature control system 1001 obtains the current temperature of the base 1002 by measuring the current temperature of the post-circulation temperature-control fluid. Since the post-circulation temperature-control fluid is the temperature-control fluid after circulating the base 1002, this temperature can be regarded as the temperature of the base 1002. In addition, since the second temperature sensor 61 is arranged in the first combined piping 1005, it is arranged on the upstream side of the pump 14. Therefore, the temperature of the post-circulation temperature-control fluid can be measured without being affected by the heat generated by the pump 14. The susceptor in the reactive ion etching type plasma processing apparatus is difficult to measure the temperature directly due to the influence of the plasma-formed processing gas, but the temperature of the susceptor 1002 can be stably monitored by measuring the current temperature of the post-circulation temperature control fluid after circulating the susceptor 1002. Moreover, the position of the second temperature sensor 61 is not limited to the first combined piping 1005, and it can also be arranged on the input piping 3, but in order to make the current temperature of the post-circulation temperature control fluid be regarded as the current temperature of the susceptor 1002, the second temperature sensor 61 is preferably arranged on the upstream side of the pump 14 and as close to the susceptor 1002 as possible.

[0043] The output pipe 4 outputs the temperature regulating fluid toward the second combined pipe 1006. The output pipe 4 is provided with a flow sensor 23 and a first temperature sensor 64 (an example of a first temperature measuring unit) in order from the upstream side. The first temperature sensor 64 measures the temperature of the temperature regulating fluid output from the output pipe 4. The fluid control unit 24 is connected to the temperature regulating unit 1003 via the input pipe 3 and the output pipe 4, and as shown in FIG. Figure 1 As shown by the dotted arrow D1 in FIG. 1 , the temperature regulating fluid circulates between the temperature regulating unit 1003 and the fluid control unit 24 .

[0044] The low temperature fluid input pipe 5 and the low temperature fluid output pipe 6 connect the fluid control unit 24 to the cold cooler 1020, and Figure 1 As shown by the dotted arrow D2 in FIG. 2 , the cryogenic fluid is input and output in the fluid control unit 24. The temperature and pressure of the cryogenic fluid input to the fluid control unit 24 are measured by the third temperature sensor 62 and the first pressure sensor 51 disposed on the cryogenic fluid input piping 5. In addition, the cryogenic fluid input piping 5 is provided with a first filter block 41, which removes foreign matter from the cryogenic fluid input from the cryogenic fluid input piping 5 to the fluid control unit 24.

[0045] The high temperature fluid input pipe 7 and the high temperature fluid output pipe 8 connect the fluid control unit 24 to the hot cooler 1010, and Figure 1 As shown by the dotted arrow D3 in FIG. 2 , the high-temperature fluid is input and output in the fluid control unit 24. The temperature and pressure of the high-temperature fluid flowing into the fluid control unit 24 are measured by the fourth temperature sensor 63 and the second pressure sensor 52 disposed on the high-temperature fluid input piping 7. In addition, the second filter block 42 is disposed on the high-temperature fluid input piping 7, and the second filter block 42 removes foreign matter from the high-temperature fluid input from the high-temperature fluid input piping 7 to the fluid control unit 24.

[0046] The fluid control unit 24 has a branching portion X that branches the input pipe 3 into a first branch line L11, a second branch line L12, and a third branch line L13. The first branch line L11 is connected to the spool valve 21 and is provided with a first check valve 25. In addition, the first branch line L11 is connected to a purification mechanism 10 including a purification switch valve 101. When, for example, the semiconductor manufacturing device 1000 is maintained, the purification switch valve 101 is opened to supply purified air to the unit 1. The second branch line L12 is connected to the output pipe 6 for low-temperature fluid and is provided with a second check valve 26. In addition, the third branch line L13 is connected to the output pipe 8 for high-temperature fluid and is provided with a third check valve 27.

[0047] The spool valve 21 is, for example, a well-known spool valve disclosed in Japanese Patent No. 5893419. The spool valve 21 includes a drive unit 211, a valve body 216, and a spool valve body 217.

[0048] The spool valve body 217 is slidably installed in the valve chamber 215 of the valve body 216 , and moves in the valve chamber 215 in response to the driving force of the driving unit 211 .

[0049] The valve body 216 is formed on the side 216a of one of the opposing side surfaces 216a and 216b so that the first supply port 213a connected to the first branch line L11, the second supply port 213b connected to the low-temperature fluid input pipe 5, and the third supply port 213c connected to the high-temperature fluid input pipe 7 are connected to the valve chamber 215. The valve body 216 is formed on the other side 216b so that the first discharge port 214a, the second discharge port 214b, and the third discharge port 214c are connected to the valve chamber 215.

[0050] The spool valve 21 controls the flow rate (flow distribution ratio) of the fluid discharged from the first to third discharge ports 214a, 214b, and 214c by moving the spool valve body 217 in the valve chamber 215, changing the flow path area of ​​the first supply port 213a opened to the first discharge port 214a, the flow path area of ​​the second supply port 213b opened to the second discharge port 214b, and the flow path area of ​​the third supply port 213c opened to the third discharge port 214c. Then, the fluid discharged from the first to third discharge ports 214a, 214b, and 214c is mixed at the confluence portion Y and output to the output pipe 4 connected to the confluence portion Y.

[0051] The fluid mixed at the confluence portion Y and output to the output piping 4 is a temperature regulating fluid for adjusting the temperature of the base 1002. In other words, the spool valve 21 adjusts the temperature of the temperature regulating fluid and outputs it to the output piping 4 by adjusting the flow distribution ratio of the circulated temperature regulating fluid input to the spool valve 21 from the input piping 3, the low-temperature fluid input to the spool valve 21 from the low-temperature fluid input piping 5, and the high-temperature fluid input to the spool valve 21 from the high-temperature fluid input piping 7.

[0052] The adjustment of the flow distribution ratio by the spool valve 21 (that is, the temperature adjustment of the temperature-regulating fluid output to the output pipe 4) is based on the temperature control value (e.g., waveform C1) generated in the control device 1030 described later (see Figure 2 )) and control.

[0053] Moreover, without using the spool valve 21, the flow rate of the temperature-regulating fluid, the low-temperature fluid, and the high-temperature fluid after circulation can be adjusted by, for example, a poppet valve, and the temperature of the temperature-regulating fluid can be adjusted. However, if a plurality of poppet valves are used, in addition to the concern of increased costs, the unit 1 will also be enlarged. In addition, since the heat capacity of the small spool valve 21 is smaller than that of the poppet valve, the heat of the temperature-regulating fluid is difficult to be taken away by the spool valve 21. As a result, the temperature control accuracy of the temperature-regulating fluid is improved. Therefore, it is better to use the spool valve 21 to adjust the temperature of the temperature-regulating fluid.

[0054] The first to third check valves 25, 26, 27 automatically adjust the valve openings according to the flow distribution ratio controlled by the spool valve 21. Therefore, in the cold cooler 1020 and the hot cooler 1010, the temperature-regulating fluid after circulation is returned in an amount substantially equal to the low-temperature fluid and the high-temperature fluid supplied to the spool valve 21.

[0055] The unit 1 includes a control device 1030 for controlling the operation of the temperature control system 1001, and the control device 1030 is communicatively connected to various sensors and valves of the unit 1. The control device 1030 includes a control substrate 1031, a pump driver 1033, and a valve controller 1032.

[0056] The control substrate 1031 generates a temperature control value (waveform C1 (see Figure 2 )). Then, the temperature measurement values ​​measured by the temperature sensors 61, 62, 63, and 64 and the pressure measurement values ​​measured by the first and second pressure sensors 51 and 52 are obtained from the unit 1, and a valve operation signal is generated in such a way that the temperature of the temperature-regulating fluid follows the temperature control value, and is sent to the unit 1 via the valve controller 1032. The unit 1 operates according to the valve operation signal through the spool valve 21, adjusts the flow distribution ratio of the temperature-regulating fluid, the low-temperature fluid, and the high-temperature fluid, and adjusts the temperature of the temperature-regulating fluid in such a way that it follows the temperature control value. As a result, the temperature of the temperature-regulating fluid is feedback-controlled and becomes uniform.

[0057] Furthermore, the control substrate 1031 obtains the flow rate measurement value measured by the flow sensor 23 from the unit 1, generates a pump operation signal in a manner to control the flow rate of the temperature control fluid to a desired set flow rate, and transmits it to the unit 1 via the pump driver 1033. The unit 1 operates the pump 14 according to the pump operation signal to adjust the flow rate of the temperature control fluid to the set flow rate. Thus, the circulation flow rate of the temperature control fluid is feedback-controlled and becomes uniform.

[0058] (For temperature control) When the temperature of the susceptor 1002 is adjusted from a predetermined first temperature T11 to a predetermined second temperature T12 which is higher than the first temperature T11 by only ΔTa temperature by using the unit 1 having the above configuration, Figure 2 Provide explanation. Figure 2 The figure is a graph showing the relationship between the temperature of the temperature regulating fluid and the temperature of the temperature regulating fluid after circulation (that is, the temperature of the base 1002) in the temperature regulating flow control unit 1 related to the first embodiment. In addition, the case where the temperature of the base 1002 is adjusted from the predetermined first temperature T11 to the predetermined second temperature T12 is, for example, the case where the processing condition is changed from the first condition to the second condition in order to switch the processing gas in the step of etching the wafer W. In other words, the predetermined first temperature T11 is the target temperature of the base 1002 in the first condition, and the predetermined second temperature T12 is the target temperature of the base in the second condition. In addition, if the semiconductor manufacturing device 1000 starts to operate, the temperature of the base 1002 at the start of the operation is the first temperature T11, and the target temperature of the base 1002 in the first processing condition after the start of the operation is the second temperature T12.

[0059] again, Figure 2 The third temperature T13 (an example of a predetermined threshold value) in the etching process can be appropriately set at a temperature at which the process is started according to the second condition even before the temperature of the base 1002 reaches the second temperature T12 when the etching process is changed from the first condition to the second condition.

[0060] again, Figure 2 The waveform C1 in FIG. 1 represents the change of the temperature control value for controlling the temperature of the temperature control fluid when the temperature of the base 1002 is adjusted from the first temperature T11 to the second temperature T12. The temperature control value includes the first temperature control value C11 and the second temperature control value C12. The first temperature control value C11 is a temperature control value for controlling the temperature of the temperature control fluid to a fourth temperature T14 that is higher than the second temperature T12 by only ΔTb. In addition, the second temperature control value C12 is a temperature control value for controlling the temperature of the temperature control fluid to the same temperature as the second temperature T12.

[0061] again, Figure 2 The waveform W11 in FIG. 1 shows the temperature change when the temperature regulating flow control unit 1 controls the temperature of the temperature regulating fluid input to the base 1002 by means of the waveform C1. The temperature of the temperature regulating fluid is a value measured by the first temperature sensor 64. The waveform W21 shows the temperature change of the temperature regulating fluid after the circulation measured by the second temperature sensor 61, that is, the temperature change of the base 1002.

[0062] The time point X1 is the time point when the temperature adjustment from the first temperature T11 to the second temperature T12 is started. At this time point X1, the temperature of the temperature-adjusting fluid input to the base 1002 and the temperature of the temperature-adjusting fluid after circulation (that is, the temperature of the base 1002) are both the first temperature T11, as shown in the waveform W11 and the waveform W21.

[0063] Then, from the time point X1, the temperature of the temperature control fluid is controlled by the first temperature control value C11. The first temperature control value C11 indicates that the temperature of the temperature control fluid is controlled to a fourth temperature T14 that is only ΔTb higher than the second temperature T12. As a result, the temperature of the temperature control fluid input to the base 1002 is adjusted toward the fourth temperature T14 as shown in the waveform W11 (first adjustment).

[0064] Since the susceptor 1002 is heated by the temperature regulating fluid adjusted to the fourth temperature T14, the current temperature of the temperature regulating fluid after circulation (that is, the current temperature of the susceptor 1002) increases with the passage of time from the time point X1 as shown in the waveform W21.

[0065] Then, the temperature control value is switched from the first temperature control value C11 to the second temperature control value C12 (time point X2) under the condition that the current temperature of the temperature control fluid after circulation (that is, the current temperature of the base 1002) rises to the third temperature T13 (threshold value). The second temperature control value C12 indicates that the temperature of the temperature control fluid is controlled to be the same as the second temperature T12. In this way, the temperature of the temperature control fluid input to the base 1002 is adjusted to the second temperature T12 (second adjustment). As shown in the waveform W11, the temperature of the temperature control fluid overshoots (overshoots) from the fourth temperature T14 to a temperature lower than the second temperature T12, and then stabilizes at the second temperature T12.

[0066] As shown in waveform W21, the current temperature of the temperature control fluid after circulation (i.e., the current temperature of the base 1002) decreases slightly immediately after the temperature control value is switched from the first temperature control value C11 to the second temperature control value C12. However, since the base 1002 is heated by the temperature control fluid adjusted to the second temperature T12, the current temperature of the temperature control fluid after circulation (i.e., the current temperature of the base 1002) increases again and reaches the second temperature T12 at time point X3.

[0067] As described above, until the current temperature of the temperature-regulating fluid after circulation (that is, the current temperature of the base 1002) rises to the third temperature T13 (threshold), the temperature of the base 1002 can be quickly raised from the first temperature T11 to the second temperature T12 because the temperature of the temperature-regulating fluid is adjusted by the first temperature control value C11 indicating a temperature higher than the second temperature T12. The time until the temperature of the base 1002 reaches the second temperature T12 (the time ΔXa from the time point X1 to the time point X3) is different from the time ΔXf taken when the temperature of the base is raised to the second temperature T12 by the temperature regulating flow control unit of the related conventional technology (please refer to Figure 6 ) is about 60% of the length. Moreover, the higher the fourth temperature T14 (first temperature control value C11) is set than the second temperature T12 (that is, the larger the value of ΔTb), the faster the temperature of the susceptor 1002 rises from the first temperature T11 to the second temperature T12. Therefore, ΔTb is appropriately set corresponding to the target time taken to raise the temperature of the susceptor 1002 from the first temperature T11 to the second temperature T12, and the fourth temperature T14 (first temperature control value C11) is determined by the set value of ΔTb and the second temperature T12.

[0068] (Second embodiment) Next, the temperature regulating flow control unit according to the second embodiment is described. The temperature regulating flow control unit according to the second embodiment has the same structure as the unit 1 according to the first embodiment, and only the temperature control value for controlling the temperature of the temperature regulating fluid is different.

[0069] In the first embodiment, immediately after the temperature control value is switched from the first temperature control value C11 to the second temperature control value C12 at the time point X2, the current temperature of the post-circulation temperature control fluid (i.e., the current temperature of the susceptor 1002) decreases and is likely to fall below the third temperature T13 (threshold value). The third temperature T13 (threshold value) is a temperature at which the process can be started according to the second condition even before the temperature of the susceptor 1002 reaches the second temperature T12 when the process condition of the etching process is changed from the first condition to the second condition. In other words, the current temperature of the post-circulation temperature control fluid (i.e., the current temperature of the susceptor 1002) starts the process according to the second condition from the time point X2 when the third temperature T13 (threshold value) is reached. After the process starts, the current temperature of the post-circulation temperature control fluid (i.e., the current temperature of the susceptor 1002) falls below the third temperature T13 (threshold value) which is the condition for starting the process. This may cause a defect in the etching process and is not preferable.

[0070] For example, by Figure 3The temperature control value shown (waveform C2) adjusts the temperature of the base 1002 preferably. Figure 3 This is a graph showing the relationship between the temperature of the temperature regulating fluid and the temperature of the temperature regulating fluid after circulation (that is, the temperature of the base 1002) in the temperature regulating flow control unit 1 of the second embodiment. Figure 3 The first temperature T11, the second temperature T12, the third temperature T13, and the fourth temperature T14 in Figure 2 The first temperature T11, the second temperature T12, the third temperature T13, and the fourth temperature T14 shown in FIG. 1 are the same. Moreover, ΔTb, which is the difference between the second temperature T12 and the fourth temperature T14, is also the same as Figure 2 The ΔTb shown is the same.

[0071] The waveform C2 shows the change of the temperature control value for controlling the temperature of the temperature regulating fluid when the temperature of the base 1002 is adjusted from the first temperature T11 to the second temperature T12. This temperature control value is generated by the control substrate 1031 based on the second temperature T12, the value of ΔTb described later, and the value of ΔXc. In addition, this temperature control value includes the first temperature control value C11, the second temperature control value C12, and the third temperature control value C13. The first temperature control value C11 and the second temperature control value C12 are the same as those in the first embodiment. The third temperature control value C13 will be described later.

[0072] The waveform W12 shows the temperature change when the temperature control flow rate control unit 1 controls the temperature of the temperature control fluid input to the base 1002 by the waveform C2. The temperature of the temperature control fluid is a value measured by the first temperature sensor 64. The waveform W22 shows the temperature change of the temperature control fluid after the circulation measured by the second temperature sensor 61, that is, the temperature change of the base 1002.

[0073] At the time point X1 when the temperature adjustment from the first temperature T11 to the second temperature T12 begins, the temperature of the temperature regulating fluid input to the base 1002 and the temperature of the temperature regulating fluid after circulation (that is, the temperature of the base 1002) are both the first temperature T11, as shown in waveforms W12 and W22.

[0074] Then, from the time point X1, the temperature of the temperature regulating fluid is controlled by the first temperature control value C11. Thus, the temperature of the temperature regulating fluid input to the susceptor 1002 is adjusted toward the fourth temperature T14 as shown in the waveform W12 (first adjustment).

[0075] Since the susceptor 1002 is heated by the temperature regulating fluid adjusted to the fourth temperature T14, the current temperature of the temperature regulating fluid after circulation (that is, the current temperature of the susceptor 1002) increases with time from the time point X1 as shown in the waveform W22.

[0076] Then, the temperature control value for controlling the temperature of the temperature control fluid is switched from the first temperature control value C11 to the second temperature control value C12 (time point X2) under the condition that the current temperature of the temperature control fluid after circulation (that is, the current temperature of the base 1002) rises to the third temperature T13 (threshold value). The switching from the first temperature control value C11 to the second temperature control value C12 is performed via the third temperature control value C13. The third temperature control value C13 gradually changes the temperature control value of the indicated temperature from the first temperature control value C11 indicating the fourth temperature T14 to the second temperature control value C12 indicating the second temperature T12 between the time point X2 and the time point X4.

[0077] Since the temperature control value is gradually changed by the third temperature control value C13, the temperature of the temperature control fluid changes smoothly toward the second temperature T12 as shown in the waveform W12. By adjusting the temperature of the temperature control fluid in this way (the second adjustment), the current temperature of the temperature control fluid after circulation (that is, the current temperature of the base 1002) is shown as the waveform W22, and there is no behavior that the temperature decreases due to the switching of the temperature control value (please refer to Figure 2 The temperature rises smoothly toward the second temperature T12 instead of the waveform W21. Thus, defects in etching processing can be prevented.

[0078] Moreover, Figure 3 The slope of the third temperature control value C13 is determined by ΔTb, which is the difference between the second temperature T12 and the fourth temperature T14, and the time of gradual change (the time ΔXc from the time point X2 to the time point X4). If the time ΔXc is too short and the slope of the third temperature control value C13 becomes steep, the current temperature of the temperature control fluid after the cycle of switching the temperature control value (that is, the current temperature of the base 1002) decreases, and there is a risk of falling below the third temperature T13 (threshold value). Therefore, the time ΔXc is obtained by experimentation to determine the length of the current temperature of the temperature control fluid after the cycle of switching the temperature control value (that is, the current temperature of the base 1002) not falling below the third temperature T13 (threshold value), and can be appropriately set to a value greater than the value obtained by the experiment.

[0079] In addition, the current temperature of the temperature-adjusting fluid after circulation (that is, the current temperature of the base 1002) reaches the second temperature T12 at the time point X5, as shown in the waveform W22, and the time taken for the base 1002 to reach the second temperature T12 (the time ΔXb from the time point X1 to the time point X5) is different from the time ΔXf taken when the temperature of the base is raised to the second temperature T12 by the temperature adjustment flow control unit of the related conventional technology (please refer to Figure 6 In other words, according to the temperature control value (waveform C2) in the second embodiment, the temperature of the base 1002 can be raised from the first temperature T11 to the second temperature T12 more quickly than the unit 1 in the first embodiment.

[0080] Here, in Figure 4 , illustrates the specific value of time ΔXb. Figure 4 This is a table that summarizes the time ΔXb until the temperature of the susceptor 1002 (the temperature of the temperature regulating fluid after circulation) reaches the second temperature T12 for each value of ΔTa, which is the difference between the first temperature T11 and the second temperature T12. For example, a value of 10 seconds when ΔTa is 30°C and the second temperature T12 is 40°C means that the time ΔXb is 10 seconds when the temperature of the susceptor 1002 is increased by 30°C to reach 40°C (that is, when the temperature of the susceptor 1002 is increased from 10°C to 40°C). Moreover, the case where ΔTa is 30°C and 40°C is shown, because in the processing conditions of general etching processing, there are many cases where ΔTa is 30 to 40°C, so it is just an example.

[0081] When ΔTa is 30℃ or 40℃, the time ΔXb is as follows Figure 4 These values ​​are 25 to 48 seconds for the time ΔXf taken to raise the temperature of the base to the second temperature T12 by the flow control unit for temperature adjustment of the conventional technology (see Figure 7 ), it can be seen that the length is about 25 to 40%.

[0082] Furthermore, the first embodiment and the second embodiment have the same structure of the unit 1, and only the temperature control value for controlling the temperature of the temperature-regulating fluid is different, so the first embodiment and the second embodiment can be switched by the structure of the program. In other words, the temperature control value can be selected to gradually change from the first temperature control value C11 corresponding to the fourth temperature T14 to the second temperature control value C12 corresponding to the second temperature T22 (that is, the temperature of the temperature-regulating fluid is controlled by the temperature control value of the waveform C1, or the temperature of the temperature-regulating fluid is controlled by the temperature control value of the waveform C2).

[0083] Furthermore, the temperature control of the temperature regulating fluid by the above-mentioned waveform C1 or waveform C2 may also be performed when the value of ΔTa exceeds a predetermined threshold value. For example, when ΔTa is below a specific value (referred to as value A), if the base 1002 is heated by the temperature regulating fluid that has been changed to the fourth temperature T14, when the temperature exceeds the target second temperature T12, the control device 1030 uses this value A as a threshold to determine whether to control the temperature of the temperature regulating fluid by the waveform C1 or waveform C2. Specifically, when ΔTa exceeds value A, the temperature control of the temperature regulating fluid by the waveform C1 or waveform C2 is performed, and when ΔTa is below value A, the temperature of the temperature regulating fluid is controlled so that it is the same temperature as the second temperature T12, as in the conventional technology, starting from time point X1 (please refer to Figure 6 ).

[0084] (Third Embodiment) In the first and second embodiments described above, the case where the temperature of the susceptor 1002 is increased is described. However, the case where the processing conditions are changed by switching the processing gas may also be considered to reduce the temperature of the susceptor 1002. Figure 5 The temperature control value (waveform C3 ) shown controls the temperature of the temperature control fluid and adjusts the temperature of the susceptor 1002 .

[0085] Figure 5 A graph is provided to show the relationship between the temperature of the temperature regulating fluid and the temperature of the temperature regulating fluid after circulation (i.e., the temperature of the base 1002) in the temperature regulating flow control unit 1 related to the third embodiment, and also to illustrate the situation in which the temperature of the base 1002 is adjusted from a predetermined first temperature T21 to a predetermined second temperature T22 which is only ΔTc lower than the first temperature T21.

[0086] Figure 5The waveform C2 in FIG. 1 represents the change of the temperature control value for controlling the temperature of the temperature regulating fluid when the temperature of the base 1002 is adjusted from the first temperature T21 to the second temperature T22. The temperature control value is generated by the control substrate 1031 based on the second temperature T22, the value of ΔTd, and the value of ΔXd. In addition, the temperature control value includes a first temperature control value C14, a second temperature control value C15, and a third temperature control value C16. The first temperature control value C14 is a temperature control value for controlling the temperature of the temperature regulating fluid to a fourth temperature T24 that is lower than the second temperature T12 by only ΔTd, and the second temperature control value C15 is a temperature control value for controlling the temperature of the temperature regulating fluid to the same temperature as the second temperature T22. The third temperature control value C16 is a temperature control value that gradually changes the indicated temperature from the first temperature control value C11 indicating the fourth temperature T24 toward the second temperature control value C12 indicating the second temperature T22.

[0087] again, Figure 5 The waveform W13 in FIG. 1 shows the temperature change when the temperature regulating flow control unit 1 controls the temperature of the temperature regulating fluid input to the base 1002 by means of the waveform C3. The temperature of the temperature regulating fluid is a value measured by the first temperature sensor 64. The waveform W23 shows the temperature change of the temperature regulating fluid after the circulation measured by the second temperature sensor 61, that is, the temperature change of the base 1002.

[0088] At the time point X1 when the temperature adjustment from the first temperature T21 to the second temperature T22 begins, the temperature of the temperature regulating fluid input to the base 1002 and the temperature of the temperature regulating fluid after circulation (that is, the temperature of the base 1002) are both the first temperature T21, as shown in waveforms W13 and W23.

[0089] Then, from the time point X1, the temperature of the temperature regulating fluid is controlled by the first temperature control value C14. Thus, the temperature of the temperature regulating fluid input to the susceptor 1002 is adjusted toward the fourth temperature T24 as shown in the waveform W13 (first adjustment).

[0090] Since the susceptor 1002 is cooled by the temperature regulating fluid adjusted to the fourth temperature T24, the current temperature of the temperature regulating fluid after circulation (that is, the current temperature of the susceptor 1002) decreases with the passage of time from the time point X1 as shown in the waveform W23.

[0091] Then, the temperature control value for controlling the temperature of the temperature control fluid is switched from the first temperature control value C14 to the second temperature control value C15 (time point X6) under the condition that the current temperature of the temperature control fluid after circulation (that is, the current temperature of the base 1002) is lowered to the third temperature T23 (threshold value). The switching from the first temperature control value C14 to the second temperature control value C15 is performed via the third temperature control value C16. The third temperature control value C16 gradually changes the indicated temperature from the first temperature control value C14 indicating the fourth temperature T24 to the second temperature control value C15 indicating the second temperature T22 between the time point X2 and the time point X4. Moreover, the slope of the third temperature control value C16 is determined by ΔTd, which is the difference between the second temperature T22 and the fourth temperature T24, and the time of gradual change (the time ΔXd from the time point X6 to the time point X7).

[0092] Moreover, Figure 5 The slope of the third temperature control value C16 is determined by ΔTd, which is the difference between the second temperature T22 and the fourth temperature T24, and the time of gradual change (the time ΔXd from the time point X6 to the time point X7). If the time ΔXd is too short and the slope of the third temperature control value C16 becomes steep, the current temperature of the temperature control fluid after the cycle of switching the temperature control value (that is, the current temperature of the base 1002) rises and there is a risk of exceeding the third temperature T23 (threshold value). In this way, there is a risk of causing a defective etching process. Therefore, the time ΔXd is obtained by experiment to determine the length of the current temperature of the temperature control fluid after the cycle of switching the temperature control value (that is, the current temperature of the base 1002) not exceeding the third temperature T23 (threshold value), and can be appropriately set to a value greater than the value obtained by the experiment.

[0093] Because the indicated temperature is gradually changed by the third temperature control value C16 from the fourth temperature T24 indicated by the first temperature control value C14 toward the second temperature T22 indicated by the second temperature control value C15, the temperature of the temperature regulating fluid changes smoothly toward the second temperature T22 as shown in the waveform W13.

[0094] Then, the base 1002 is cooled by the temperature regulating fluid changed to the second temperature T22, and the current temperature of the temperature regulating fluid after circulation (that is, the current temperature of the base 1002) reaches the second temperature T22 at the time point X5 as shown in the waveform W23.

[0095] As described above, until the current temperature of the temperature-regulating fluid after circulation (that is, the current temperature of the base 1002) is reduced to the third temperature T23 (threshold value), the temperature of the temperature-regulating fluid is adjusted by the first temperature control value C14 indicating a temperature lower than the second temperature T22, so that the temperature of the base 1002 can be quickly reduced from the first temperature T21 to the second temperature T22. Moreover, the lower the fourth temperature T24 (first temperature control value C14) is set to be than the second temperature T22 (that is, the larger the value of ΔTd), the faster the temperature of the base 1002 is reduced from the first temperature T21 to the second temperature T22. Therefore, ΔTd is appropriately set corresponding to the target time taken to reduce the temperature of the base 1002 from the first temperature T21 to the second temperature T22, and the fourth temperature T24 (first temperature control value C14) is determined by the setting of this ΔTd.

[0096] Moreover, at the time point X6, the switch from the first temperature control value C14 to the second temperature control value C15 is as follows: Figure 2 The waveform C1 in FIG. 1 may be performed without passing through the third temperature control value C16.

[0097] Furthermore, the temperature control of the temperature control fluid by the waveform C3 described above may also be performed when the value of ΔTc exceeds a predetermined threshold value. For example, when ΔTc is less than a specific value (referred to as value B), if the base 1002 is cooled by the temperature control fluid that has been changed to the fourth temperature T24, when the temperature exceeds the target second temperature T22, the control device 1030 determines whether to control the temperature of the temperature control fluid by the waveform C3, using this value B as a threshold. Specifically, when ΔTc exceeds value B, the temperature control of the temperature control fluid by the waveform C3 is performed, and when ΔTc is less than value B, the temperature control is performed in a manner such that the temperature of the temperature control fluid is the same as the second temperature T22, as in the conventional art, starting from the time point X1.

[0098] Furthermore, in the first embodiment, the second embodiment, and the third embodiment, since the configuration of the unit 1 is the same, only the temperature control value for controlling the temperature of the temperature-controlling fluid is different, the control device 1030 can also automatically determine whether to adjust the temperature of the temperature-controlling fluid using the waveform C1 or the waveform C2 or to adjust the temperature of the temperature-controlling fluid using the waveform C3 in response to increasing or decreasing the temperature of the base. Specifically, when the current temperature of the temperature-controlling fluid after circulation (the current temperature of the base 1002) is lower than the target second temperature T12 or T22, the temperature of the temperature-controlling fluid is adjusted using the waveform C1 or the waveform C2 because the temperature of the base must be increased, and when the current temperature of the temperature-controlling fluid after circulation (the current temperature of the base 1002) is higher than the target second temperature T12 or T22, the temperature of the temperature-controlling fluid is adjusted using the waveform C3 because the temperature of the base must be decreased.

[0099] As described above, according to the temperature adjustment flow control unit 1, the temperature of the susceptor 1002 included in the semiconductor manufacturing apparatus 1000 is adjusted from the predetermined first temperature T11 to the predetermined second temperature T12 by circulating the temperature adjustment fluid in the susceptor 1002, and the temperature adjustment flow control unit 1030 includes the output pipe 4, the first temperature measuring unit (the first temperature sensor 64), the input pipe 3, the control device 1030, the fluid control unit 24, and the second temperature measuring unit (the second temperature sensor 61). The output pipe 4 outputs the temperature adjustment fluid to the susceptor 1002. The first temperature measuring unit (the first temperature sensor 64) measures the temperature of the temperature adjustment fluid output from the output pipe 4. The input pipe 3 inputs the circulated temperature adjustment fluid that is the temperature adjustment fluid output from the output pipe 4 to the susceptor 1002 and circulated in the susceptor 1002. The control device 1030 generates a temperature control value (waveform C1 or waveform C2) indicating the temperature of the temperature adjustment fluid output from the output pipe 4. The fluid control unit 24 adjusts the temperature of the temperature-regulating fluid output from the output pipe 4 based on the temperature control value (waveform C1 or waveform C2). The second temperature measuring unit (second temperature sensor 61) measures the current temperature of the temperature-regulating fluid after circulation. The temperature control value (waveform C1 or waveform C2) includes a first temperature control value C11 indicating a temperature (fourth temperature T14) higher than the second temperature T12, and a second temperature control value C12 indicating the same temperature as the second temperature T12. The fluid control unit 24 performs a first adjustment of adjusting the temperature of the temperature-regulating fluid by the first temperature control value C11 until the current temperature rises to a predetermined threshold value (third temperature T13) lower than the second temperature T12 when the current temperature is lower than the second temperature T12, and performs a second adjustment of adjusting the temperature of the temperature-regulating fluid by the second temperature control value C12 until the current temperature rises to the threshold value (third temperature T13).

[0100] Furthermore, in the temperature adjustment flow control unit 1, preferably, the temperature control value (waveform C2) in the second adjustment is gradually changed from the first temperature control value C11 to the second temperature control value C12 (third temperature control value C13).

[0101] Furthermore, in the above-mentioned temperature adjustment flow control unit 1, it is preferred that the fluid control unit 24 includes a low-temperature pipe (a low-temperature fluid input pipe 5 and a low-temperature fluid output pipe 6), a high-temperature pipe (a high-temperature fluid input pipe 7 and a high-temperature fluid output pipe 8), and a spool valve 21. The low-temperature pipe (the low-temperature fluid input pipe 5 and the low-temperature fluid output pipe 6) flows with a low-temperature fluid for lowering the temperature of the temperature adjustment fluid. The high-temperature pipe (the high-temperature fluid input pipe 7 and the high-temperature fluid output pipe 8) flows with a high-temperature fluid for raising the temperature of the temperature adjustment fluid. The spool valve 21 is connected to the output pipe 4, the input pipe 3, the low-temperature pipe (the low-temperature fluid input pipe 5 and the low-temperature fluid output pipe 6), and the high-temperature pipe (the high-temperature fluid input pipe 7 and the high-temperature fluid output pipe 8). The spool valve 21 controls the flow distribution ratio of the temperature adjustment fluid, the low-temperature fluid, and the high-temperature fluid after the circulation, and adjusts the temperature of the temperature adjustment fluid output from the output pipe 4.

[0102] In the temperature regulating flow control unit 1 , the input pipe 3 preferably includes a pump 14 . The pump 14 circulates the temperature regulating fluid. The second temperature measuring unit (second temperature sensor 61 ) is provided upstream of the pump 14 .

[0103] In the temperature adjustment flow control unit 1, it is preferred to further include a connecting pipe (for example, a first connecting pipe 1005) connecting the input pipe 3 and the base 1002. The second temperature measuring unit (second temperature sensor 61) is provided in the connecting pipe (first connecting pipe 1005).

[0104] The temperature adjustment flow control unit 1 measures the current temperature of the circulating temperature adjustment fluid by means of the second temperature measuring unit (second temperature sensor 61). The circulating temperature adjustment fluid is the temperature adjustment fluid after circulating the susceptor 1002, so the temperature can be regarded as the temperature of the susceptor 1002. For example, in a plasma processing device of a reactive ion etching type, it is difficult to directly measure the temperature of the susceptor 1002 due to the influence of the plasma processing gas. In contrast, by measuring the current temperature of the circulating temperature adjustment fluid after circulating the susceptor 1002, the temperature of the susceptor 1002 can be stably monitored.

[0105] Furthermore, the temperature control flow control unit 1 adjusts the temperature of the temperature control fluid (i.e., the temperature of the base 1002) to the predetermined second temperature T12 by raising the current temperature of the temperature control fluid (the temperature of the base 1002) after circulation to a predetermined threshold value (third temperature T13) lower than the second temperature T12, and by adjusting the temperature of the temperature control fluid (first adjustment) by a predetermined first temperature control value C11 indicating a temperature (fourth temperature T14) higher than the second temperature T12, when the current temperature of the temperature control fluid after circulation (i.e., the temperature of the base 1002) is lower than the second temperature T12. Thus, the base 1002 is heated by the temperature control fluid having a temperature higher than the second temperature T12, and the temperature of the base 1002 is rapidly increased to the second temperature T12. Then, when the current temperature of the temperature regulating fluid after circulation (the temperature of the base 1002) rises to the threshold value (the third temperature T13), the temperature of the base 1002 can be stabilized at the second temperature T12 by adjusting the temperature of the temperature regulating fluid (the second adjustment) by using the second temperature control value C12 indicating the same temperature as the second temperature T12.

[0106] Furthermore, according to another aspect of the present invention, a temperature adjustment flow control unit 1 adjusts the temperature of the susceptor 1002 from a predetermined first temperature T21 to a predetermined second temperature T22 by circulating a temperature adjustment fluid in the susceptor 1002 included in the semiconductor manufacturing apparatus 1000, and includes an output pipe 4, a first temperature measuring unit (first temperature sensor 64), an input pipe 3, a control device 1030, a fluid control unit 24, and a second temperature measuring unit (second temperature sensor 61). The output pipe 4 outputs the temperature adjustment fluid toward the susceptor 1002. The first temperature measuring unit (first temperature sensor 64) measures the temperature of the temperature adjustment fluid output from the output pipe 4. The input pipe 3 inputs the circulated temperature adjustment fluid that is output from the output pipe 4 toward the susceptor 1002 and is the temperature adjustment fluid circulated in the susceptor 1002. The control device 1030 generates a temperature control value (waveform C3) indicating the temperature of the temperature adjustment fluid output from the output pipe 4. The fluid control unit 24 adjusts the temperature of the temperature-regulating fluid output from the output pipe 4 based on the temperature control value (waveform C3). The second temperature measuring unit (second temperature sensor 61) measures the current temperature of the temperature-regulating fluid after circulation. The temperature control value (waveform C3) includes a predetermined first temperature control value C14 indicating a temperature (fourth temperature T24) lower than the second temperature T22, and a second temperature control value C15 indicating the same temperature as the second temperature T22. The fluid control unit 24 performs a first adjustment to adjust the temperature of the temperature-regulating fluid by using the first temperature control value C14 until the current temperature drops to a predetermined threshold value (third temperature T23) higher than the second temperature T22 when the current temperature is higher than the second temperature T22, and performs a second adjustment to adjust the temperature of the temperature-regulating fluid by using the second temperature control value C15 when the current temperature drops to the threshold value (third temperature T23).

[0107] Furthermore, in the above-mentioned temperature adjustment flow control unit 1, preferably, the temperature control value in the second adjustment is gradually changed from the first temperature control value C14 to the second temperature control value C15 (third temperature control value C16).

[0108] Furthermore, in the above-mentioned temperature adjustment flow control unit 1, it is preferred that the fluid control unit 24 includes a low-temperature pipe (a low-temperature fluid input pipe 5 and a low-temperature fluid output pipe 6), a high-temperature pipe (a high-temperature fluid input pipe 7 and a high-temperature fluid output pipe 8), and a spool valve 21. The low-temperature pipe (the low-temperature fluid input pipe 5 and the low-temperature fluid output pipe 6) flows with a low-temperature fluid for lowering the temperature of the temperature adjustment fluid. The high-temperature pipe (the high-temperature fluid input pipe 7 and the high-temperature fluid output pipe 8) flows with a high-temperature fluid for raising the temperature of the temperature adjustment fluid. The spool valve 21 is connected to the output pipe 4, the input pipe 3, the low-temperature pipe (the low-temperature fluid input pipe 5 and the low-temperature fluid output pipe 6), and the high-temperature pipe (the high-temperature fluid input pipe 7 and the high-temperature fluid output pipe 8). The spool valve 21 controls the flow distribution ratio of the temperature adjustment fluid, the low-temperature fluid, and the high-temperature fluid after the circulation, and adjusts the temperature of the temperature adjustment fluid output from the output pipe 4.

[0109] In the temperature regulating flow control unit 1 , the input pipe 3 preferably includes a pump 14 . The pump 14 circulates the temperature regulating fluid. The second temperature measuring unit (second temperature sensor 61 ) is provided on the upstream side of the pump 14 .

[0110] In the temperature adjustment flow control unit 1, it is preferred to further include a connecting pipe (for example, a first connecting pipe 1005) connecting the input pipe 3 and the base 1002. The second temperature measuring unit (second temperature sensor 61) is provided in the connecting pipe (first connecting pipe 1005).

[0111] Furthermore, the temperature control flow control unit 1 adjusts the temperature of the temperature control fluid (i.e., the temperature of the base 1002) to the predetermined second temperature T22 by lowering the current temperature of the temperature control fluid (the temperature of the base 1002) after circulation to a predetermined threshold value (third temperature T23) higher than the second temperature T22, and by adjusting the temperature of the temperature control fluid (first adjustment) by a predetermined first temperature control value C14 indicating a temperature (fourth temperature T24) lower than the second temperature T22, when the current temperature of the temperature control fluid after circulation (i.e., the temperature of the base 1002) is higher than the second temperature T22. Thus, the base 1002 is cooled by the temperature control fluid at a temperature lower than the second temperature T22, and the temperature of the base 1002 is quickly lowered to the second temperature T22. Then, when the current temperature of the temperature regulating fluid after circulation (the temperature of the base 1002) drops to the threshold value (the third temperature T23), the temperature of the base 1002 can be stabilized at the second temperature T22 by adjusting the temperature of the temperature regulating fluid (the second adjustment) by using the second temperature control value C15 indicating the same temperature as the second temperature T22.

[0112] Furthermore, the semiconductor manufacturing apparatus 1000 in one aspect of the present invention includes the susceptor 1002 and the temperature adjustment flow control unit 1 connected to the susceptor 1002 , so the temperature of the susceptor 1002 can be adjusted quickly.

[0113] Moreover, the above-mentioned embodiments are merely illustrative and do not limit the present invention in any way. Therefore, the present invention can be modified and altered in various ways without departing from the main purpose. For example, in the above-mentioned embodiments, the unit 1 is used in the semiconductor manufacturing device 1000 as an example, but it can also be used for temperature control of things other than the semiconductor manufacturing device 1000. Description of the label

[0114] 1: Flow control unit for temperature adjustment (unit) 3: Input piping 4: Output piping 24: Fluid control department 61: Second temperature sensor (an example of a second temperature measuring unit) 64: First temperature sensor (an example of a first temperature measuring unit) 1002: Base 1030: Control device C1: Waveform C11: First temperature control value C12: Second temperature control value T11: First temperature T12: Second temperature.

Claims

1. A temperature adjustment flow control unit, which adjusts the temperature of a susceptor included in a semiconductor manufacturing device from a predetermined first temperature to a predetermined second temperature by circulating a temperature adjustment fluid in the susceptor, comprising: An output pipe for outputting the temperature-adjusting fluid toward the base; a first temperature measuring unit for measuring the temperature of the temperature regulating fluid output from the output pipe; an input pipe for inputting a circulated temperature-control fluid output from the output pipe toward the base and being the temperature-control fluid circulated in the base; a control device that generates a temperature control value indicating the temperature of the temperature-regulating fluid output from the output pipe; a fluid control unit that adjusts the temperature of the temperature-regulating fluid output from the output pipe based on the temperature control value; as well as A second temperature measuring unit for measuring the current temperature of the temperature regulating fluid after the circulation; The temperature control value includes a predetermined first temperature control value indicating a temperature higher than the second temperature, and a second temperature control value indicating a temperature the same as the second temperature; The fluid control unit, When the current temperature is lower than the second temperature, until the current temperature rises to a predetermined threshold value lower than the second temperature, a first adjustment of the temperature of the temperature regulating fluid is performed by the first temperature control value, and, When the current temperature rises to the threshold value, a second adjustment of the temperature of the temperature regulating fluid is performed by the second temperature control value.

2. A temperature adjustment flow control unit, which adjusts the temperature of a susceptor included in a semiconductor manufacturing device from a predetermined first temperature to a predetermined second temperature by circulating a temperature adjustment fluid in the susceptor, comprising: An output pipe for outputting the temperature-adjusting fluid toward the base; a first temperature measuring unit for measuring the temperature of the temperature regulating fluid output from the output pipe; an input pipe for inputting a circulated temperature-control fluid output from the output pipe toward the base and being the temperature-control fluid circulated in the base; a control device that generates a temperature control value indicating the temperature of the temperature-regulating fluid output from the output pipe; a fluid control unit that adjusts the temperature of the temperature-regulating fluid output from the output pipe based on the temperature control value; as well as A second temperature measuring unit for measuring the current temperature of the temperature regulating fluid after the circulation; The temperature control value includes a predetermined first temperature control value indicating a temperature lower than the second temperature, and a second temperature control value indicating a temperature the same as the second temperature; The fluid control unit, In the case where the current temperature is higher than the second temperature, until the current temperature drops to a predetermined threshold value higher than the second temperature, a first adjustment of the temperature of the temperature regulating fluid is performed by the first temperature control value, and, When the current temperature drops to the threshold value, a second adjustment of the temperature of the temperature regulating fluid is performed by the second temperature control value.

3. The temperature adjustment flow control unit according to claim 1, wherein: The temperature control value in the second adjustment gradually changes from the first temperature control value to the second temperature control value.

4. The temperature adjustment flow control unit according to claim 2, wherein: The temperature control value in the second adjustment gradually changes from the first temperature control value to the second temperature control value.

5. The temperature adjustment flow control unit according to any one of claims 1 to 4, wherein: The fluid control unit includes: a low-temperature pipe through which a low-temperature fluid for lowering the temperature of the temperature-regulating fluid flows; a high-temperature pipe through which a high-temperature fluid for raising the temperature of the temperature-regulating fluid flows; and A spool valve connected to the output pipe, the input pipe, the low temperature pipe and the high temperature pipe; The spool valve controls the flow distribution ratio of the circulated temperature-regulating fluid, the low-temperature fluid, and the high-temperature fluid, and adjusts the temperature of the temperature-regulating fluid output from the output pipe.

6. The temperature adjustment flow control unit according to any one of claims 1 to 4, wherein: The input piping includes: a pump to circulate the temperature-regulating fluid; The second temperature measuring unit is provided on the upstream side of the pump.

7. The temperature adjustment flow control unit according to any one of claims 1 to 4, further comprising: Combining piping to connect the input piping and the base; The second temperature measuring unit is provided on the coupling pipe.

8. A semiconductor manufacturing device comprising: the base; as well as, A temperature regulating flow control unit as claimed in any one of claims 1 to 4 connected to the base.

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