An optical amplifier integrated chip with arbitrary position pump coupling

Abstract

The present application relates to an optical amplifier integrated chip with arbitrary position pump coupling, which includes: an end-face coupled input waveguide structure; a mode multiplexing structure for converting fundamental mode pump light into first-order mode pump light and combining the fundamental mode signal light and the first-order mode pump light; a gain amplification waveguide structure for amplifying the fundamental mode signal light; at least one coupled pump light structure for coupling the fundamental mode pump light into any position of the gain amplification waveguide structure; a mode demultiplexing structure for demultiplexing the first-order mode pump light and the amplified fundamental mode signal light; and an end-face coupled output structure for coupling the fundamental mode pump light and the amplified fundamental mode signal light. By utilizing the mode multiplexing structure on the optical amplifier integrated chip for cross-band combining, the problem of low coupling efficiency is resolved and the flexibility of arbitrary position pump coupling is achieved.

Description

Technical Field

[0001] The present application relates to the fields of silicon photonic integrated devices and optical waveguide amplification, and in particular to an optical amplification integrated chip with arbitrary position pump coupling. Background Art

[0002] Optical amplifier integrated circuits play an indispensable role in detecting tiny signals in communications systems and sensing fields. Optical amplifier integrated circuits have a wide range of applications, but their role is particularly significant in these areas. In the communications field, optical amplifier integrated circuits convert optical signals into electrical signals through photoelectric conversion, enabling high-speed, high-capacity data transmission. This conversion process is crucial for ensuring stable signal transmission, especially in fiber-optic communications, where it enhances the intensity of optical signals to ensure signal transmission quality and distance. Furthermore, optical amplifier integrated circuits can analyze and process optical signals of different wavelengths, which is crucial for the transmission and processing of multi-wavelength optical signals.

[0003] In related technologies, the wavelength division multiplexing structure on the optical amplifier integrated chip is used for cross-band beam combining, but its coupling efficiency is low. Therefore, efficient cross-band on-chip coupling is a difficult problem that urgently needs to be solved. Summary of the Invention

[0004] The present application provides an optical amplifier integrated chip with arbitrary position pump coupling, which utilizes the mode multiplexing structure on the optical amplifier integrated chip to perform cross-band beam combining, thereby solving the technical problem of low coupling efficiency and achieving the flexibility of arbitrary position pump coupling.

[0005] The embodiment of the present application provides an optical amplifier integrated chip with arbitrary position pump coupling, comprising:

[0006] An end-face coupled input waveguide structure, which is used for coupling input of fundamental mode signal light and fundamental mode pump light;

[0007] A mode multiplexing structure for converting fundamental mode pump light into first-order mode pump light and combining the fundamental mode signal light and the first-order mode pump light;

[0008] A gain amplification waveguide structure, which is used to amplify fundamental mode signal light;

[0009] at least one coupled pump light structure, configured to couple fundamental mode pump light into any position of the gain amplification waveguide structure;

[0010] A mode demultiplexing structure for demultiplexing the first-order mode pump light and the amplified fundamental mode signal light;

[0011] An end-face coupling output structure for coupling out fundamental mode pump light and amplified fundamental mode signal light;

[0012] The end-face coupled input waveguide structure, the mode multiplexing structure, the gain amplifying waveguide structure, the mode demultiplexing structure and the end-face coupled output structure are connected in sequence, and the coupled pump light structure is arranged in the transmission path of the gain amplifying waveguide structure.

[0013] In one embodiment, the mode multiplexing structure includes:

[0014] a first input waveguide for inputting fundamental mode pump light;

[0015] A second input waveguide, which is used for inputting fundamental mode signal light;

[0016] The first coupling waveguide and the second coupling waveguide are used to convert the input fundamental mode pump light into the first-order mode pump light;

[0017] an output waveguide for outputting fundamental mode signal light and first-order mode pump light;

[0018] The first input waveguide and the first coupling waveguide are connected, the second input waveguide, the second coupling waveguide and the output waveguide are connected in sequence, and the first coupling waveguide and the second coupling waveguide are arranged in parallel.

[0019] In one embodiment, the mode multiplexing structure includes:

[0020] substrate layer 1;

[0021] a first oxide layer covering the top surface of the first substrate layer;

[0022] a ridge-type transmission layer 1, covering the top surface of the ridge-type transmission layer 1;

[0023] The first waveguide cladding layer covers the top surface of the first ridge transmission layer.

[0024] In one embodiment, the material of the substrate layer 1 includes silicon, the material of the ridge transmission layer 1 includes silicon nitride, and the materials of the oxide layer 1 and the waveguide cladding layer 1 include silicon dioxide.

[0025] In one embodiment, the gain amplification waveguide structure includes:

[0026] substrate layer 2;

[0027] a second oxide layer covering the top surface of the second substrate layer;

[0028] a ridge waveguide gain layer, covering the top surface of the second oxide layer;

[0029] The second waveguide cladding layer covers the top surface of the ridge waveguide gain layer.

[0030] In one embodiment, the material of the second substrate layer includes silicon, the material of the ridge waveguide gain layer includes erbium-doped silicon nitride, and the material of the second oxide layer and the second waveguide cladding layer includes silicon dioxide.

[0031] In one embodiment, the end-face coupling input waveguide structure and the end-face coupling output structure include a grating coupling structure, an end-face coupling structure based on a pattern spot transformation structure, or an array coupling structure.

[0032] In one embodiment, the waveguide upper cladding material of the end-face coupled input waveguide structure, the mode multiplexing structure, the gain amplification waveguide structure, the mode demultiplexing structure and the end-face coupled output structure includes silicon dioxide or polymethyl methacrylate.

[0033] In one embodiment, the gain waveguide of the gain amplification waveguide structure includes an Euler-bent straight waveguide or a spiral structure.

[0034] In one embodiment, the mode multiplexing structure and the mode demultiplexing structure include an asymmetric directional coupler or a symmetric directional coupler structure.

[0035] The beneficial effects of the technical solutions provided in the embodiments of the present application include:

[0036] The mode-multiplexing structure achieves efficient coupling between pump light and signal light. The phase mismatch between the fundamental mode and other modes of the signal light prevents leakage of the signal light into the upper coupling waveguide of the mode-multiplexing structure, achieving low-loss and low-crosstalk coupling of the fundamental mode signal light, thereby achieving efficient transmission. At least one coupled pump light structure can be placed at any position within the gain-amplifying waveguide structure for pump light coupling, enabling transmission and amplification of optical energy. This design offers convenience, high performance, and compactness. The gain-amplifying waveguide structure compensates for losses during optical fiber transmission and generates population inversion under the action of the pump light, thereby providing optical gain to the incident light signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0038] Figure 1 A schematic diagram of the structure of an optical amplifier integrated chip with arbitrary position pump coupling provided in an embodiment of the present application;

[0039] Figure 2Schematic diagram of the distribution of mode fields of pump light and signal light in different modes in a waveguide provided by an embodiment of the present application;

[0040] Figure 3 A side cross-sectional schematic diagram of the mode multiplexing waveguide structure provided in an embodiment of the present application.

[0041] Figure 4 A schematic top view of a mode multiplexing waveguide structure provided in an embodiment of the present application;

[0042] Figure 5 A side cross-sectional schematic diagram of the enlarged structure provided in an embodiment of the present application.

[0043] In the figure: 1. End-face coupled input waveguide structure; 2. Mode multiplexing structure; 201. Substrate layer 1; 202. Oxide layer 1; 203. Ridge transmission layer 1; 204. Waveguide cladding layer 1; 205. First input waveguide; 206. Second input waveguide; 207. First coupling waveguide; 208. Second coupling waveguide; 209. Output waveguide; 3. Gain amplification waveguide structure; 301. Substrate layer 2; 302. Oxide layer 2; 303. Ridge waveguide gain layer; 304. Waveguide cladding layer 2; 4. Coupled pump light structure; 5. Mode demultiplexing structure; 6. End-face coupled output structure. DETAILED DESCRIPTION

[0044] In order to enable those skilled in the art to better understand the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0045] The embodiments of the present application provide an optical amplifier integrated chip with arbitrary position pump coupling, which utilizes the mode multiplexing structure on the optical amplifier integrated chip for cross-band beam combining, thereby solving the technical problem of low coupling efficiency and achieving the flexibility of arbitrary position pump coupling.

[0046] like Figure 1As shown, an embodiment of the present application provides an optical amplifier integrated chip with arbitrary position pump coupling, which includes: an end-face coupling input waveguide structure 1, which is used for coupling input of fundamental mode signal light and fundamental mode pump light; a mode multiplexing structure 2, which is used to convert the fundamental mode pump light into first-order mode pump light and combine the fundamental mode signal light and the first-order mode pump light; a gain amplification waveguide structure 3, which is used to amplify the fundamental mode signal light; at least one coupling pump light structure 4, which is used to couple the fundamental mode pump light into the gain amplification waveguide structure 3; a mode demultiplexing structure 5, which is used to demultiplex the first-order mode pump light and the amplified fundamental mode signal light; an end-face coupling output structure 6, which is used for coupling output of the amplified fundamental mode signal light; the end-face coupling input waveguide structure 1, the mode multiplexing structure 2, the gain amplification waveguide structure 3, the mode demultiplexing structure 5 and the end-face coupling output structure 6 are connected in sequence, and the coupling pump light structure 4 is arranged in the transmission path of the gain amplification waveguide structure 3.

[0047] For example, refer to Figure 1 Three coupled pump light structures 4 are arranged in sequence on the transmission path of the gain amplification waveguide structure 3. Their function is to couple the light emitted by the high-power fundamental mode pump laser into the chip, thereby improving the pumping efficiency and the gain performance of the optical amplifier integrated chip.

[0048] The optical amplifier integrated chip integrates an end-face coupled input waveguide structure 1, a mode multiplexing structure 2, a gain amplification waveguide structure 3, at least one coupled pump light structure 4, a mode demultiplexing structure 5 and an end-face coupled output structure 6.

[0049] Reference Attachment Figure 2 As can be seen from the figure, in this embodiment, 1530nm signal light and 980nm pump light are used to achieve fiber-to-chip coupling through an end-face coupling input waveguide structure 1 using a two-channel optical fiber array. The pump light then undergoes mode conversion and is combined with the signal light through a mode multiplexing structure 2, and is input into a gain-amplifying waveguide structure 3. At any position within the gain-amplifying waveguide structure 3, three coupled pump light structures 4 are used to efficiently introduce the fundamental mode pump light into the gain-amplifying waveguide structure 3. The amplified fundamental mode signal light and the first-order mode pump light are separated from the amplified fundamental mode signal light through a mode demultiplexing structure 5. The fundamental mode pump light and the amplified fundamental mode signal light are then coupled out separately through an end-face coupling output structure 6.

[0050] Among them, refer to the attached Figure 2 , Figure 2This figure shows the mode field distribution of the pump light and signal light in the waveguide under different modes, including the TE0 fundamental mode of the 980nm pump light, the TE1 first-order mode of the 980nm pump light, and the TE0 fundamental mode of the 1550nm signal light. Mode multiplexing structure 2 is used to convert the TE0 fundamental mode pump light to generate TE1 higher-order mode pump light. The TE0 mode is the fundamental mode of the transverse electric field, and the TE1 mode is the first-order mode of the transverse electric field.

[0051] Specifically, the mode multiplexing structure 2 achieves efficient coupling between pump light and signal light. The phase mismatch between the fundamental mode of the signal light and other modes prevents the signal light from leaking into the upper coupling waveguide of the mode multiplexing structure 2, achieving low-loss and low-crosstalk coupling of the fundamental mode signal light, thereby achieving efficient transmission. At least one coupled pump light structure 4 can be placed at any position within the gain-amplifying waveguide structure 3 to couple pump light to achieve transmission and amplification of optical energy. This design offers convenience, high performance, and compactness. The gain-amplifying waveguide structure 3 can compensate for losses during optical fiber transmission and, under the action of the pump light, generates a population inversion, thereby providing optical gain to the incident optical signal.

[0052] Combined with the first aspect, such as Figure 4 As shown, in one embodiment, the mode multiplexing structure 2 includes: a first input waveguide 205, which is used for inputting fundamental mode pump light; a second input waveguide 206, which is used for inputting fundamental mode signal light; a first coupling waveguide 207 and a second coupling waveguide 208, which are used to convert the input fundamental mode pump light into first-order mode pump light; an output waveguide 209, which is used for outputting fundamental mode signal light and first-order mode pump light; the first input waveguide 205 and the first coupling waveguide 207 are connected, the second input waveguide 206, the second coupling waveguide 208 and the output waveguide 209 are connected in sequence, and the first coupling waveguide 207 and the second coupling waveguide 208 are arranged in parallel.

[0053] Exemplarily, the mode multiplexing structure 2 includes a first input waveguide 205, a second input waveguide 206, a first coupling waveguide 207, a second coupling waveguide 208, and an output waveguide 209. TE0 fundamental mode pump light with a wavelength of 980 nm passes sequentially through the coupling input waveguide structure of the end-face coupling input waveguide structure 1 and the first input waveguide 205 of the mode multiplexing structure 2. At the first coupling waveguide 207, since the phase matching condition is met, the TE0 fundamental mode of the pump light in the first coupling waveguide 207 undergoes mode conversion in the second coupling waveguide 208, converting it to the TE1 first-order mode and outputting it to the output waveguide 209. The TE0 fundamental mode signal light with a wavelength of 1530nm passes through the coupling input waveguide structure of the end-face coupling input waveguide structure 1 and the second input waveguide 206 of the mode multiplexing structure 2 in sequence. When passing through the second coupling waveguide 208 of the coupling region, due to the large phase mismatch between the fundamental mode of the signal light in the first coupling waveguide 207 (that is, the lower waveguide of the coupling region) and the other modes in the second coupling waveguide 208 (that is, the upper waveguide of the coupling region), no coupling occurs between them. The fundamental mode remains unchanged and is transmitted along the transmission direction of the light beam. At the output waveguide 209 of the mode multiplexing structure 2, the 1530nm TE0 fundamental mode signal light and the 980nm TE1 first-order mode pump light are obtained.

[0054] Utilizing the coupled-mode principle, the mode multiplexing structure 2 achieves efficient coupling between pump light and signal light. The phase mismatch between the fundamental mode of the signal light and other modes prevents leakage of the signal light into the first coupling waveguide 207, thereby isolating the signal light from the first coupling waveguide 207. Furthermore, the mode-division multiplexing pumping method allows pump light to be introduced into the gain-amplifying waveguide structure 3 at any location on the chip, addressing the limitation of low pumping efficiency.

[0055] In one embodiment, Figure 3 As shown, the mode multiplexing structure 2 includes: a substrate layer 201; an oxide layer 202, which covers the top surface of the substrate layer 201; a ridge transmission layer 203, which covers the top surface of the ridge transmission layer 203; and a waveguide cladding layer 204, which covers the top surface of the ridge transmission layer 203.

[0056] For example, Figure 3 2 is a schematic cross-sectional view of the mode multiplexing structure 2, which mainly includes a substrate layer 201, an oxide layer 202, a ridge transmission layer 203, and a waveguide cladding layer 204 covering the ridge transmission layer 203; wherein, the oxide layer 202 covers the substrate layer 201; the ridge transmission layer 203 is located on the oxide layer 202; and the waveguide cladding layer 204 covers the ridge transmission layer 203.

[0057] In one embodiment, the material of the substrate layer 201 includes silicon, the material of the ridge transmission layer 203 includes silicon nitride, and the material of the oxide layer 202 and the waveguide cladding layer 204 includes silicon dioxide.

[0058] For example, the substrate layer 201 may be made of silicon, the oxide layer 202 may be made of silicon dioxide, the ridge transmission layer 203 may be made of silicon nitride, and the waveguide cladding layer 204 may be made of silicon dioxide.

[0059] Specifically, the waveguides of mode multiplexing structure 2 are arranged on the top surface of ridge transmission layer 1 203. Specifically, the first input waveguide 205, the second input waveguide 206, the first coupling waveguide 207, the second coupling waveguide 208, and the output waveguide 209 are all located on the top surface of ridge transmission layer 1 203. This layer covers the oxide layer 1 202, which in turn covers the top surface of substrate layer 1 201. Finally, the waveguide cladding layer 1 204 covers the ridge transmission layer 1 203 and the waveguide structure thereon, forming a complete waveguide arrangement.

[0060] In one embodiment, Figure 3 As shown, the gain amplification waveguide structure 3 includes: a second substrate layer 301; a second oxide layer 302 covering the top surface of the second substrate layer 301; a ridge waveguide gain layer 303 covering the top surface of the second oxide layer 302; and a second waveguide cladding layer 304 covering the top surface of the ridge waveguide gain layer 303.

[0061] In one embodiment, the material of the second substrate layer 301 includes silicon, the material of the ridge waveguide gain layer 303 includes erbium-doped silicon nitride, and the material of the second oxide layer 302 and the second waveguide cladding layer 304 includes silicon dioxide.

[0062] Exemplarily, the gain-amplifying waveguide structure 3 includes a second substrate layer 301, a second low-refractive-index oxide layer 302, a ridge waveguide gain layer 303, and a second waveguide cladding layer 304 covering the ridge waveguide gain layer 303. In this embodiment, the second substrate layer 301 can be made of silicon, the second low-refractive-index oxide layer 302 can be made of silicon dioxide, the ridge waveguide gain layer 303 can be made of erbium-doped silicon nitride waveguide, and the second waveguide cladding layer 304 can be made of silicon dioxide.

[0063] Specifically, the waveguide of the gain-amplifying waveguide structure 3 is located on the top surface of the ridge waveguide gain layer 303, which in turn covers the second oxide layer 302, which in turn covers the top surface of the second substrate layer 301. Finally, the second waveguide cladding layer 304 covers the ridge waveguide gain layer 303 and the waveguide structure thereon, forming a complete waveguide arrangement.

[0064] Furthermore, the substrate layer 2 301 of the gain amplifying waveguide structure 3 and the substrate layer 1 201 of the mode multiplexing structure 2 are located on the same layer, the oxide layer 2 302 of the gain amplifying waveguide structure 3 and the oxide layer 1 202 of the mode multiplexing structure 2 are located on the same layer, and so on, completing the one-to-one correspondence between the layering of the gain amplifying waveguide structure 3 and the layering of the mode multiplexing structure 2.

[0065] In one embodiment, the end-face coupling input waveguide structure 1 and the end-face coupling output structure 6 include a grating coupling structure, an end-face coupling structure based on a mode spot transformation structure, or an array coupling structure.

[0066] Exemplarily, the end-face coupled input waveguide structure 1 and the end-face coupled output structure 6 can select one of the grating coupling structure, the end-face coupling structure based on the mode spot transformation structure, and the array coupling structure, for coupling the off-chip optical fiber with the on-chip waveguide fiber-chip.

[0067] In one embodiment, the waveguide upper cladding material of the end-face coupling input waveguide structure 1, the mode multiplexing structure 2, the gain amplification waveguide structure 3, the mode demultiplexing structure 5 and the end-face coupling output structure 6 includes silicon dioxide or polymethyl methacrylate.

[0068] Exemplarily, the waveguide upper cladding material (the waveguide upper cladding material refers to the material layer located above the waveguide core layer in the waveguide structure) of the end-face coupled input waveguide structure 1, the mode multiplexing structure 2, the gain amplification waveguide structure 3, the mode demultiplexing structure 5 and the end-face coupled output structure 6 includes one or more of silica and polymethyl methacrylate (PMMA).

[0069] In one embodiment, the material of the second waveguide cladding layer 304 of the gain amplification waveguide structure 3 includes silicon dioxide.

[0070] In one embodiment, the rare earth elements in the ridge waveguide gain layer 303 (ie, the rare earth doped gain layer) of the gain amplification waveguide structure 3 may include one or more of erbium, ytterbium, and thulium to obtain gain, thereby providing the desired amplification function.

[0071] In one embodiment, the gain waveguide of the gain amplification waveguide structure 3 includes an Euler-bent straight waveguide or a spiral structure.

[0072] Exemplarily, the gain waveguide of the gain amplification waveguide structure 3 may be a straight waveguide with Euler bending or a spiral structure to achieve low loss and compact structure.

[0073] In one embodiment, the mode multiplexing structure 2 and the mode demultiplexing structure 5 include asymmetric directional couplers or symmetric directional coupler structures. The mode multiplexing structure 2 and the mode demultiplexing structure 5 have the same structure and size, and their input and output terminals are oppositely arranged.

[0074] Furthermore, the waveguide structures of the mode multiplexing structure 2 and the mode demultiplexing structure 5 need to meet the phase matching condition, which is:

[0075]

[0076] Among them, W i and W j They refer to the widths of the upper waveguide (second coupling waveguide 208) and the lower waveguide (first coupling waveguide 207) in the coupling region of the mode multiplexing structure 2, respectively. and They refer to the effective refractive indices of the pump light in the TE0 fundamental mode and TE1 high-order mode in the upper waveguide and lower waveguide of the coupling region, respectively.

[0077] In the description of this application, it should be noted that the terms "upper" and "lower" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application. Unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be internal communication between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0078] It should be noted that, in this application, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element.

[0079] The foregoing is merely a list of specific embodiments of the present application, intended to enable those skilled in the art to understand or implement the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is intended to conform to the broadest scope consistent with the principles and novel features of the present application.

Claims

1. An optical amplifier integrated chip with arbitrary position pump coupling, characterized in that: It includes: An end-face coupled input waveguide structure (1) for coupling input of fundamental mode signal light and fundamental mode pump light; A mode multiplexing structure (2) for converting fundamental mode pump light into first-order mode pump light and combining the fundamental mode signal light and the first-order mode pump light; A gain amplification waveguide structure (3) for amplifying fundamental mode signal light; at least one coupled pump light structure (4) for coupling fundamental mode pump light into any position of the gain amplification waveguide structure (3); A mode demultiplexing structure (5) for demultiplexing the first-order mode pump light and the amplified fundamental mode signal light; An end face coupling output structure (6) for coupling out the amplified fundamental mode signal light and the fundamental mode pump light; The end-face coupled input waveguide structure (1), the mode multiplexing structure (2), the gain amplifying waveguide structure (3), the mode demultiplexing structure (5) and the end-face coupled output structure (6) are connected in sequence, and the coupled pump light structure (4) is arranged in the transmission path of the gain amplifying waveguide structure (3).

2. The optical amplifier integrated chip with arbitrary position pump coupling according to claim 1, characterized in that: The mode multiplexing structure (2) includes: A first input waveguide (205) for inputting fundamental mode pump light; A second input waveguide (206) for inputting fundamental mode signal light; A first coupling waveguide (207) and a second coupling waveguide (208), which are used to convert input fundamental mode pump light into first-order mode pump light; an output waveguide (209) for outputting fundamental mode signal light and first-order mode pump light; The first input waveguide (205) is connected to the first coupling waveguide (207), the second input waveguide (206), the second coupling waveguide (208) and the output waveguide (209) are connected in sequence, and the first coupling waveguide (207) and the second coupling waveguide (208) are arranged in parallel.

3. The optical amplifier integrated chip with arbitrary position pump coupling according to claim 1, characterized in that: The mode multiplexing structure (2) includes: substrate layer one (201); an oxide layer (202) covering the top surface of the substrate layer (201); A ridge-type transmission layer (203) covering the top surface of the ridge-type transmission layer (203); A waveguide cladding layer (204) covers the top surface of the ridge-type transmission layer (203).

4. The optical amplifier integrated chip with arbitrary position pump coupling according to claim 3, characterized in that: The material of the substrate layer 1 (201) includes silicon, the material of the ridge transmission layer 1 (203) includes silicon nitride, and the material of the oxide layer 1 (202) and the waveguide cladding layer 1 (204) include silicon dioxide.

5. The optical amplifier integrated chip with arbitrary position pump coupling according to claim 1, characterized in that: The gain amplification waveguide structure (3) comprises: Substrate layer two (301); A second oxide layer (302), which covers the top surface of the second substrate layer (301); A ridge waveguide gain layer (303) covering the top surface of the second oxide layer (302); The second waveguide cladding layer (304) covers the top surface of the ridge waveguide gain layer (303).

6. The optical amplifier integrated chip with arbitrary position pump coupling according to claim 5, characterized in that: The material of the second substrate layer (301) includes silicon, the material of the ridge waveguide gain layer (303) includes erbium-doped silicon nitride, and the material of the second oxide layer (302) and the second waveguide cladding layer (304) includes silicon dioxide.

7. The optical amplifier integrated chip with arbitrary position pump coupling according to claim 1, characterized in that: The end-face coupling input waveguide structure (1) and the end-face coupling output structure (6) include a grating coupling structure, an end-face coupling structure based on a pattern spot transformation structure, or an array coupling structure.

8. The optical amplifier integrated chip with arbitrary position pump coupling according to claim 1, characterized in that: The waveguide upper cladding material of the end-face coupled input waveguide structure (1), the mode multiplexing structure (2), the gain amplification waveguide structure (3), the mode demultiplexing structure (5) and the end-face coupled output structure (6) comprises silicon dioxide or polymethyl methacrylate.

9. The optical amplifier integrated chip with arbitrary position pump coupling according to claim 1, characterized in that: The gain waveguide of the gain amplification waveguide structure (3) comprises an Euler-bent straight waveguide or a spiral structure.

10. The optical amplifier integrated chip with arbitrary position pump coupling according to claim 1, characterized in that: The mode multiplexing structure (2) and the mode demultiplexing structure (5) include an asymmetric directional coupler or a symmetric directional coupler structure.

Images