Photonic network
By integrating a controllable optocoupler in the photon processor, the rapid modulation and redirection of optical signals in the optical guide unit network is achieved, solving the problem of long calculation time of photon processors and improving computing efficiency and throughput.
Patent Information
- Application Number
- CN202380042060.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-06-13
- Filing Date
- 2023-06-12
- Publication Date
- 2025-01-03
AI Technical Summary
When existing photon processors perform parallel computing tasks, the calculation time is long because the signal modulation speed of the phase change material is related to temperature changes, and the attenuation of light in the optical processor will significantly slow down the overall calculation of the processor. time.
A photon processor including a fully connected optical guide unit network is designed to achieve rapid optical signal modulation and redirection by integrating a controllable optocoupler between the optical guide units, using an electrical or optical tunable modulation structure to improve calculations. efficiency.
Parallel calculations with high computing throughput and low latency are realized. The modulation function of the controllable optocoupler significantly improves the processing speed of the optical signal, and overcomes the problem of insufficient response speed of phase change materials.
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Figure CN119256253A_ABST
Abstract
Description
[0001] Technical Field and Background
[0002] The technology of the present disclosure relates to photonic networks, which are particularly useful in photonic artificial intelligence neural network applications.
[0003] In general-purpose processors that offer high computational flexibility, matrix operations occur serially, one at a time, while requiring continuous access to cache memory, and thus creating the so-called "von Neumann bottleneck". Various architectures for neural networks (NNs), such as graphics processing units (GPUs) and tensor processing units (TPUs), have been designed to reduce the impact of the von Neumann bottleneck, thereby enabling cutting-edge machine learning models. An example of these architectures is to provide domain specificity, such as being optimized for performing convolution or matrix-vector multiplication (MVM) operations, which is different from CPUs, such as being deployed in parallel via systolic algorithms.
[0004] In recent years, the revolutionary impact of machine learning (ML) and especially neural networks (NN) has driven the development of various emerging photonic technologies, ranging from free-space diffractive optics to nanophotonic processors designed to improve the computational efficiency of specific tasks performed by ML / NN. Integrated photonic platforms can indeed provide parallel, energy-efficient computing, which is possible because photonic chips can inherently use light-matter interactions (e.g., via phase shifters) to perform dot products, and can achieve signal accumulation (summing) through electromagnetic coherent interference or incoherent accumulation through detectors, as well as the ability to achieve parallel strategies and higher throughput, for example, using multiplexing schemes (such as wavelength division multiplexing or polarization division multiplexing).
[0005] For example, J. Feldmann et al., "Parallel convolutional processing using an integrated photonic tensor core" in Nature, Volume 589, January 7, 2021, describes a computationally dedicated integrated photonic hardware accelerator (tensor core). The tensor core can be considered as the optical analog of an application-specific integrated circuit (ASIC). It uses a phase-change material memory array and a photonic chip-based optical frequency comb (soliton microcomb) to provide parallel photonic in-memory computing.
[0006] Overview
[0007] There is a need in the art for a novel photonic processing device that is capable of performing parallel computing tasks / operations (e.g., matrix-vector multiplication (MVM)) at optical data rates, thereby achieving high computing throughput and low latency in a single physical processing unit. Some examples of computing tasks that can be performed by a photonic processing device include convolution, matrix multiplication, Fourier transform, etc.
[0008] Considering the above-mentioned techniques of J. Feldmann et al., it should be noted that the speed of signal modulation achieved by phase change materials (PCM) is associated with the material's transition phase in response to its temperature change, and therefore is not high enough. Therefore, when implemented in a photonic processor (e.g., because of the attenuation of light), these PCMs can significantly slow down the overall computation time of the processor.
[0009] The present disclosure provides a novel photonic processor device, which includes a network (e.g., a mesh) of fully connected light-guiding units (e.g., waveguides or optical fibers), in which full and flexible connectivity is achieved by integrating a controllable optical coupler into each photonic intersection (node) between the light-guiding units. The controllable optical coupler includes a light-guiding element for optically coupling a portion of light from one light-guiding unit to another intersecting light-guiding unit, and is configured as an electrically or optically tunable tunable modulation structure.
[0010] Each controllable optical coupler is independently controllably operated by applying a control electric field (voltage) or optical field (light) to change the operating state of the coupler from its passive state to its active state and between its multiple different active states, but the coupler applies intensity modulation to the light passing through it in any of its active states. In this regard, it should be understood that using analog voltage values, the change of the operating state of the coupler can be continuous.
[0011] As described above, a controllable optical coupler configured according to the techniques of this disclosure is sometimes referred to hereinafter as a "coupler," "optical coupler," "controller," or "control unit."
[0012] The integration of the above-mentioned electrically or optically tunable modulation function in the optical coupler can be achieved by configuring the photoconductive element of the coupler as an electrically or optically tunable modulation structure, or by integrating the electrically or optically tunable modulator into the photoconductive element of the coupler.
[0013] The coupler (electrically or optically tunable modulation structure) is configured to have optical properties that change in response to an applied electric field or optical field, that is, the coupler responds to the applied field by changing its optical properties (such as absorption / transmission properties and / or refractive index and / or amplification properties), thereby directly affecting the intensity of light passing therethrough, or the coupler responds to the applied field via a change in the phase of a component of the light passing therethrough.
[0014] This change in the optical property in response to the applied electric or optical field can be achieved relatively quickly and provides modulation to the optical signal passing through the coupler. Thus, the application of time-varying modulation of the optical signal (via switching between a plurality of different modulation / active states of the coupler) can be performed at sufficiently high speeds.
[0015] The photonic grid of the present disclosure includes: a first array of input light guide units and a second array of output light guide units, the first array of input light guide units being arranged in a first plane in a spaced-apart, substantially parallel relationship along a first axis, and the second array of output light guide units being arranged in a second plane in a spaced-apart, substantially parallel relationship along a second axis intersecting the first axis (e.g., the second axis being substantially perpendicular to the first axis). This configuration forms a matrix of aligned regions of the input light guide units and the output light guide units presenting a network node.
[0016] It should be understood that the first plane and the second plane may be substantially coincident, or may be spaced apart from one another, as long as appropriate coupling between light guide elements at the nodes is included.
[0017] A matrix of optical couplers respectively housed at network nodes is also provided in the photonic grid, each optical coupler being configured and operable to provide optical coupling of light from an input optical guide unit to an output optical guide unit at a corresponding node (i.e., at an alignment region of the input optical guide unit and the output optical guide unit, which implements a "crossing point" between these units). Each optical coupler is also configured as an electrically or optically tunable modulation structure.
[0018] Thus, each input optical waveguide unit can be optically coupled to each of the output optical waveguide units via a corresponding coupler at the region of a network node, so that the coupler redirects ("drops") a portion of the input optical signal propagating in the input optical waveguide unit (depending on the degree of coupling) into the intersecting output optical waveguide unit, while allowing the remaining portion of the input optical signal to continue its propagation in the input optical waveguide unit towards a successive node where the corresponding coupler performs such redirection into the corresponding output optical waveguide unit.
[0019] As described above, the optical coupler is configured as an electrically or optically tunable modulation structure, each optical coupler can be independently and controllably switched between its multiple operating states by applying a tuning field (the tuning field is an electric field (voltage) or an optical field). The coupler, in its active state, affects the intensity modulation of the light portion that is unloaded (coupled) into the output light guide unit. The applied tuning field is selected (controlled) according to a predetermined weight to be applied to the light portion that is coupled / unloaded into the output light guide unit. Therefore, all couplers are connected to a control system including a weighted signal controller.
[0020] It should be noted that the optical properties of the input optical signals are such that they do not substantially interfere with each other. This can be achieved by using substantially incoherent optical signals or optical signals of different wavelengths. To this end, the optical input device associated with the input port of the input light guide unit may include a wavelength division multiplexer.
[0021] The light-guiding unit may be manufactured using various techniques, including 3D femtosecond laser scribing, 3D printing or silicon photonics technology, among others.
[0022] In some embodiments, the tunable modulation structure of the coupler can be realized by integrating a tunable modulator in the optical element of the coupler. Such a tunable modulator can be an electro-absorption modulator (EAM), or a semiconductor optical amplifier (SOA), or a liquid crystal modulator. The tunable modulator is accommodated in the optical element of the coupler, in the optical path of the light portion removed from the input optical element by the coupler and propagated toward the corresponding output optical element.
[0023] As described above, in some other embodiments, the tunable modulation structure of the coupler is achieved by configuring the optical waveguide element of the coupler as a tunable modulator. This can be achieved, for example, by manufacturing the core of the optical waveguide element of the coupler from an electro-absorption material (usually a semiconductor material component, such as Si or Ge-Si, InGaAlAs or InP). In such an embodiment, the optical waveguide unit and the coupler (optical waveguide element) can be manufactured using similar CMOS compatible technology.
[0024] In further embodiments, the photoconductive element of the coupler is configured as or comprises an electro-optic modulator, such as a Mach-Zehnder interferometer combined with a phase shifting unit, such as a Mach-Zehnder interferometer made of LiNbO 3 .
[0025] Thus, according to a broad aspect of the present invention, there is provided a photonic system comprising:
[0026] a photonic grid comprising a first array of N input lightguide elements located in a first plane and arranged in a spaced-apart, substantially parallel relationship along a first axis and a second array of M output lightguide elements located in a second plane and arranged in a spaced-apart, substantially parallel relationship along a second axis intersecting the first axis, such that the photonic grid defines an N×M matrix of nodes; and
[0027] Accordingly, an N×M matrix of optical couplers is accommodated at the nodes,
[0028] Wherein, each of the optical couplers is configured to optically couple a portion of the optical signal from the input optical waveguide unit into the output optical waveguide unit at a corresponding node, and each of the optical couplers is configured as a tunable modulation structure, which can be controllably switched between multiple operating states by applying a tuning field, and the tuning field is an electric field or an optical field configured as a weighted signal to achieve corresponding intensity modulation of the portion of the optical signal coupled from the input optical waveguide unit into the output optical waveguide unit through the optical coupler.
[0029] The number N of input light guide units may be the same as or different from the number M of output light guide units.
[0030] The optical coupler includes a light guide element located at a node and configured to couple a portion of an optical signal propagated by an input light guide unit into an output light guide unit to pass through the node and allow the remaining portion of the input light signal to propagate through the input light guide unit toward a successive node.
[0031] In some embodiments, the optical coupler includes a photoconductive element configured as an electrically tunable modulator / modulation structure, which responds to an excitation / tuning field by changing the optical properties of the photoconductive element, which in turn causes an intensity modulation of an optical signal passing through the coupler corresponding to the excitation electric field.
[0032] For example, such a photoconductive element configured as a tunable modulation structure / modulator may include erbium-doped glass that receives electrically controlled pump light of varying intensity.
[0033] In some examples, the core of the light-guiding element is constructed of an electro-absorption material composition, which is typically a semiconductor material composition, such as Si, Si-Ge, InGaAlAs, or InP.
[0034] In some other embodiments, the optical coupler includes a light-conducting element, which includes a tunable modulator in the light-conducting element. Such a tunable modulator is configured to be switchable between multiple operating states characterized by multiple optical properties of the modulator by an excitation / tuning field (electric field or optical field), so that the interaction of the optical signal with the modulator causes an intensity modulation of the optical signal corresponding to the excitation electric field.
[0035] The tunable modulator inside the photoconductive element of the coupler can be configured to include any of the following: an electro-absorption modulator, a semiconductor optical amplifier, a liquid crystal modulator, a Mach-Zehnder interferometer. In the case of a Mach-Zehnder interferometer, at least one arm of the interferometer has a region containing a tunable modulator (e.g., a LiNbO3 unit cell) that, when an excitation / tuning field is applied, affects the phase change of the light components passing therethrough, thereby affecting the phase difference between the light components passing through the arms of the interferometer, resulting in intensity modulation of the light output from the interferometer. BRIEF DESCRIPTION OF THE DRAWINGS
[0037] For a better understanding of the subject matter disclosed herein and in order to illustrate how it may be implemented in practice, embodiments will now be described, by way of non-limiting examples only, with reference to the accompanying drawings, in which:
[0038] Figure 1 is a schematic diagram of a fully connected photonic grid of the present disclosure;
[0039] Figure 2A and Figure 2B Examples are given for Figure 1 Two configurations of couplers used in a fully connected photonic grid;
[0040] Figure 2C An electro-absorption coupler implemented as or including a Mach-Zehnder type modulator is illustrated; and
[0041] FIG. 3A to FIG. 3C An example of a photonic grid configuration utilizing an array of input light guide elements and an array of output light guide elements, respectively located in spaced apart planes, is schematically shown, wherein: Figure 3A and Figure 3B Perspective and side views of the photon grid are shown, and Figure 3C Displays the couplers used at the mesh nodes for this configuration. DETAILED DESCRIPTION
[0042] refer to Figure 1 , Figure 1 The photonic system 10 of the present disclosure is schematically shown. The photonic system 10 comprises a fully connected photonic grid / network 12 associated with a control system 16. The photonic grid 12 interconnects between light input devices 14 and light output devices (photodetector systems) 20.
[0043] The photonic grid 10 comprises N (N≥2) spaced-apart substantially parallel input light guide elements IW1 . . . IW n An input array IL of (waveguides or optical fibers) and M (M≥2) spaced apart substantially parallel output light guide elements OW1...OWm Output array OL, input light guide unit IW1...IW n Extending along the first axis A1, the output light guide unit OW1...OW m Extending along a second axis A2 intersecting the first axis A1 of the input light guide unit. Output light guide unit OW1 ... OW m The number M may be equal to or different from the input light guide units IW1 . . . IW n The number N of input light guide units is as follows. For example, the input light guide unit may be substantially perpendicular to the output light guide unit. Input light guide units IW1 . . . IW n Through their input ports IP1...IP n Connected to input device 14, and output light guide unit OW1...OW m Through their output ports OP1...OP m Connected to the photodetector system 20.
[0044] In the exemplary system 10 shown in the figure, three input light guide units IW1, IW2 and IW3 and three output light guide units OW1, OW2 and OW3 are shown. The input light guide units IW1, IW2, IW3 are connected to the input device 14 through their input ports IP1, IP2, IP3, and the output light guide units OW1, OW2, OW3 are connected to the photodetector system 20 through their output ports OP1, OP2, OP3.
[0045] The input light guide unit and the output light guide unit are located in a first plane and a second plane, and the first plane and the second plane may substantially coincide with each other or may be spaced apart from each other, so that an intersection area between the input light guide unit and the output light guide unit (when the first plane and the second plane substantially coincide with each other) or an area of the input light guide unit aligned with an area of the output light guide unit (when the first plane and the second plane are spaced apart from each other) forms a node / junction point J of the grid / network n,m In the figure, node J is shown 11 , J 12 , J 13 , J 21 , J 22 , J 23 , J 31 , J 32 and J 33 .
[0046] Each ijth node is associated with its corresponding optical coupler Cij. 11 , C 12 , C 13 , C 21 , C 22 , C23 , C 31 , C 32 and C 33 is shown with the corresponding node J 11 , J 12 , J 13 , J 21 , J 22 , J 23 , J 31 , J 32 and J 33 Therefore, each i-th input light guide unit IW in the N input light guide units i At the node, via the corresponding optical coupler C i1 ……C im With M output light guide units OW1...OW m Each optical coupler in.
[0047] Each optocoupler C i,j (i=1, ..., N; j=1, ..., M) is configured as a tunable modulation structure, which can be ij The corresponding node is located to perform optical coupling between the i-th input light guide unit and the j-th output light guide unit, and is used to selectively apply intensity modulation to the light passing therethrough.
[0048] The operation of each coupler is shown in the figure with reference to coupler C. 11 As shown in the figure, at node J 11 The coupler transmits a portion (IS1) of the input optical signal IS1 propagating in the input optical waveguide unit IW1. d Unloading / coupling into the output light guide unit OW1 allows the remaining part of the signal IS1 (IS1) t Through the input light guide unit IS1 toward the next node J 12 propagation, so that part of the light undergoes the next node J 12 Through coupler C 12 is coupled successively into the successive output light guide unit OW2 and may also undergo a pass through the coupler C 12 Intensity modulation by an electrically or optically tunable modulation function (depending on the controllable switching of the coupler between its different operating states characterized by different modulation functions).
[0049] The optical part removed from the coupler (IS1) d The optical portion (IS1) may be subjected to intensity modulation by the tunable modulation structure of the coupler. d Continue to propagate along the corresponding output light guide unit OW1 towards the corresponding output port OP1.
[0050] It should be noted that the optical signals input to the grid are substantially non-interfering signals. This can be achieved by using optical signals of different wavelengths, for example, by using a wavelength division multiplexer 15 at the optical input device 14; or by using substantially incoherent input optical signals.
[0051] The amount of light that is partially unloaded / coupled is defined by a predetermined coupling degree at the corresponding node. It should be noted that the coupling degree may or may not be the same at different nodes. In general, the coupling degree depends mainly on the materials used in the coupler and the distance between the light guide unit (waveguide) and the light guide element of the corresponding coupler.
[0052] The tunable modulation structure (coupler) is connected to a control system 16. The control system 16 includes an operationally controllable tuning field source (e.g., a voltage supply system or a light source system), which is used as a weighted signal controller 18. By applying a tuning field, the coupler can be switched from its passive state / condition (in which the optical properties of the coupler remain unchanged and the coupler therefore does not affect the light passing therethrough) to its selective active state / condition, which causes a change in the optical properties of the coupler or the modulation structure within the coupler (as described above). Similarly, the coupler can be switched between a plurality of different active states characterized by different optical properties, thereby differently affecting the light passing therethrough. When the coupler is in an active operating state, the coupler affects the intensity modulation (attenuation / gain) of the light interacting with (passing through) the coupler according to a weighted signal corresponding to the applied electric field.
[0053] Generally, the tunable modulation structure can be implemented as a light-guiding element (e.g., a waveguide or an optical fiber) whose core is made of a tunable material composition, or as a light-guiding element (e.g., a waveguide or an optical fiber) including a tunable modulator located in the light-guiding element. Figure 1 As shown in the non-limiting example of , each coupler is a photoconductive element including a tunable modulator, generally indicated at 22 .
[0054] For example, the tunable modulator 22 can be configured as an electro-absorption modulator (EAM), in which an applied electric field causes a change in the absorption spectrum via the Franz-Keldysh effect in a bulk semiconductor or via the quantum confined Stark effect (QCSE) in a quantum well. Electro-absorption modulators are generally known and therefore do not require a specific description, but the following should be noted: In the Franz-Keldysh effect, the electric field changes the band gap energy due to changes in the overlap of the wave functions of the excitons (electrons and holes), thereby affecting the light absorption / transmission of the light signal interacting with the electrically tunable modulator 20 (the more overlap, the stronger the absorption). In the quantum confined Stark effect (QCSE), the applied field deflects the potential well (quantum well), which causes the hole and electron energy levels to move, reducing the gap between these energy levels, which manifests as a change in light absorption.
[0055] Alternatively, the tunable modulation 20 may be an optical amplifier, such as a semiconductor optical amplifier (SOA), in which electrons are excited in response to an applied tuning field. When photons travel through an active region, these electrons are caused to lose some of their additional energy in the form of more photons that match the wavelength of the initial photon. Thus, the optical signal passing through the active region is amplified. SOAs are also generally known and therefore do not require a detailed description.
[0056] In some embodiments, the tunable modulator 22 or tunable modulation structure C in the photoconductive element of the coupler C can be implemented as an electro-optic modulator, such as a Mach-Zehnder modulator (MZM), in which at least one arm is made of a material with a strong electro-optic effect (e.g., LiNbO3, InGaAs, InP). Applying an electric field to the at least one arm of the MZM affects a change in the optical path length within the arm, thereby affecting the phase modulation of the light component passing through the corresponding arm of the MZM, resulting in a phase difference between the light components propagating through the two arms. Combining the light components with such a phase difference provides intensity modulation.
[0057] It should also be noted that other types of electrically or optically tunable modulators may also be used, such as liquid crystal (LC) modulators.
[0058] Each tunable modulation structure (e.g., a tunable modulator 22 within a photoconductive element of a coupler or a photoconductive element configured as a modulator) is connected to a weighting controller 18, which selectively provides a weighting signal (voltage or light) based on the weight to be applied to the optical signal passing through the corresponding coupler.
[0059] The optical signals (including the intensity modulated optical signals) exit the M output light guide units via respective output ports and are directed to the photodetector system 20 .
[0060] refer to Figure 2A and Figure 2B , Figure 2A and Figure 2B An exemplary configuration of a coupler C is schematically shown, which is configured and operable as a tunable modulation structure. The coupler C includes a light guide element LGE having a first coupling section 24, which defines a coupling region with an input light guide unit IW, a second coupling section 26, and an intermediate section 25 between the first coupling section 24 and the second coupling section 26, wherein the first coupling section 24 defines a coupling region with an input light guide unit IW, and the second coupling section 26 defines a coupling region with an intersecting / aligned output light guide unit OW. The size and material composition of the coupling regions 24 and 26 are selected to provide a desired degree of coupling with the respective light guide units. The first coupling region 24 and the second coupling region 26 may have the same or different degrees of coupling.
[0061] It should be noted that the coupling region can be formed of or include any light-conducting material, such as, but not limited to, any one or more of the following: silicon dioxide, silicon, InGaAs, Ge, etc., depending on the operating wavelength. The coupling coefficient is independent of the material, but depends on the structure of the coupler, such as the distance of the coupler from the waveguide, the width of the coupler, the NA of the coupler, etc.
[0062] As described above, the entire optical waveguide element of the coupler or at least a portion thereof at the intermediate section 25 is configured with a tunable modulation function / characteristic, thereby forming a tunable modulation structure of the coupler.
[0063] refer to Figure 2A For example, the intermediate segment 25 may be made of a material such as SiO2 or SiN, with electrodes contained within and along the segment 25 for applying an electric field in a direction perpendicular to the optical signal propagating therethrough; or the entire optical waveguide element of the coupler C may be made of an electrically tunable material such as Si or Ge-Si, InGaAlAs or InP.
[0064] Alternatively, as in Figure 2B As illustrated in FIG. 2 , the intermediate section 25 includes a tunable modulator 22. As described above, such a tunable modulator may be an EAM or a SOA.
[0065] As described above, the light-guiding element LGE of the coupler C may be configured as a Mach-Zehnder type modulator or may include such a Mach-Zehnder type modulator 22. Figure 2C24 and 26. The Mach-Zehnder modulator may include a lithium niobate (LiNbO3) coating / film within a portion / segment of one arm which, when excited by an applied tuning field, exhibits a change in refractive index and thus affects the phase of an optical signal passing through said segment. For example, the input and output portions of a Mach-Zehnder type modulator may present an input segment 24 and an output segment 26 of a coupler.
[0066] refer to FIG. 3A to FIG. 3C , FIG. 3A to FIG. 3C A three-dimensional configuration of a fully connected photonic grid 12 of the present disclosure is schematically shown. Figure 3A and Figure 3B A perspective view and a side view of the grid 12 are shown, respectively, and Figure 3C An embodiment of the light-guiding element of coupler C is shown in this three-dimensional configuration.
[0067] As in Figure 3A and Figure 3B As shown in the figure, the input layer IL (the plane of the location of the input light guide units) and the output layer OL (the plane of the location of the output light guide units) are spaced apart parallel layers. As illustrated in the figure, the input light guide units IW1, IW2 and IW3 of the input layer IL are located above or below the output light guide units OW1, OW2 and OW3 of the output layer OL. Figure 3C A light guiding element LGE of a coupler C is shown connected between an input light guiding unit IW and an output light guiding unit OW.
Claims
1. A photonic system, comprising: a photonic grid comprising a first array of N input lightguide elements located in a first plane and arranged in a spaced-apart, substantially parallel relationship along a first axis and a second array of M output lightguide elements located in a second plane and arranged in a spaced-apart, substantially parallel relationship along a second axis intersecting the first axis, such that the photonic grid defines an N×M matrix of nodes; and Accordingly, an N×M matrix of optical couplers is accommodated at the nodes, Wherein, each of the optical couplers is configured to couple a portion of the input optical signal from the input optical waveguide unit into the output optical waveguide unit at a corresponding node, and each of the optical couplers is configured as a tunable modulation structure, which can be controllably switched between multiple operating states by applying a tuning field, and the tuning field is an electric field or an optical field configured as a weighted signal to achieve corresponding intensity modulation of the portion of the optical signal coupled from the input optical waveguide unit to the output optical waveguide unit through the optical coupler.
2. The photonic system according to claim 1, wherein: The optical coupler includes an optical waveguide element, which is located at the node and is configured to couple the portion of the optical signal propagated by the input optical waveguide unit into the output optical waveguide unit to pass through the node, and allow the remaining portion of the input optical signal to propagate through the input optical unit toward a successive node.
3. The photonic system according to claim 2, wherein: The optical waveguide element of the optical coupler is configured as the tunable modulation structure, which is capable of switching between different operating states of the tunable modulation structure characterized by different optical properties of the tunable modulation structure in response to the tuning field, thereby differently affecting the intensity modulation of the optical signal passing through the optical waveguide element corresponding to the applied tuning field.
4. The photonic system according to claim 3, wherein: The core of the light-guiding element is constructed from an electro-absorbent material composition.
5. The photonic system according to claim 3, wherein: The core of the light-guiding element is constructed from a semiconductor material composition.
6. The photonic system according to claim 4, wherein: The core of the light-guiding element is constructed from a semiconductor material composition.
7. The photonic system according to claim 5, wherein: The core of the optical waveguide element is constructed of at least one of Si, Si-Ge, InGaAlAs, and InP.
8. The photonic system according to claim 6, wherein: The core of the optical waveguide element is constructed of at least one of Si, Si-Ge, InGaAlAs, and InP.
9. The photonic system according to claim 2, wherein: The optical coupler includes erbium-doped glass.
10. The photonic system according to claim 2, wherein: The optical waveguide element of the coupler includes a tunable modulator in the optical waveguide element, and the tunable modulator is configured to be able to switch between multiple operating states of the tunable modulator characterized by different optical properties of the modulator through the tuning field, thereby differently affecting the intensity modulation of the optical signal passing through the optical waveguide element corresponding to the electric field.
11. The photonic system according to claim 10, wherein: The tunable modulator is configured as an electro-absorption modulator.
12. The photonic system according to claim 10, wherein: The tunable modulator is configured as a semiconductor optical amplifier.
13. The photonic system according to claim 10, wherein: The tunable modulator is configured as a liquid crystal modulator.
14. The photonic system according to claim 10, wherein: The tunable modulator is configured as a Mach-Zehnder interferometer, at least one arm of the interferometer includes a region containing a tunable element, which, when applied to the tuning field, affects a phase change of a light component passing through the tunable element, thereby affecting a phase difference between light components passing through the arms of the interferometer, resulting in an intensity modulation of light output from the interferometer.
15. The photonic system according to claim 14, wherein: The tunable cell is configured as a LiNbO3 cell.
16. The photonic system of claim 14, wherein: The tunable unit is configured as a semiconductor optical amplifier (SOA).
