Exhaust gas distribution device, exhaust gas system and deposition and / or etching equipment

Abstract

The invention relates to an exhaust gas distribution device (1) for guiding an exhaust gas course of a gas (7) to be discharged in a deposition and / or etching chamber (6) of a deposition and / or etching apparatus (200), characterized in that the exhaust gas distribution device (1) has an exhaust gas distribution plate (2) having a semi-enclosed shape and thus having a cutout (16), and a shutter (3), the exhaust gas distribution device (1) comprises an exhaust gas distribution plate (2), a plurality of exhaust holes (5) are formed in the exhaust gas distribution plate (2), and when the exhaust gas distribution device (1) is located in a deposition and / or etching cavity (6) of the deposition and / or etching equipment (200), the shielding piece (3) is constructed to be used for at least shielding the part, located above the exhaust gas distribution plate (2), of an exhaust port (8) of the deposition and / or etching cavity (6). The invention also relates to an exhaust system (100) and a deposition and / or etching apparatus (200).

Description

Technical Field

[0001] The invention relates to an exhaust gas distribution device, an exhaust gas system having the exhaust gas distribution device, and a deposition and / or etching device having the exhaust gas system. Background Art

[0002] Silicon carbide (SiC), as a representative material of the third generation of semiconductor materials, has excellent properties such as wide bandgap, high critical breakdown electric field, high electron saturation mobility and high thermal conductivity. Therefore, it has received extensive attention in the field of power electronic devices. Silicon carbide trench metal oxide semiconductor field effect transistor (SiC Trench MOSFET) is one of the main types of power devices at present. Among them, trench MOSFET has lower conduction loss, better switching performance, can improve wafer density and avoid the generation of parasitic JFET effect compared with traditional planar structure MOSFET, and has attracted much attention in recent years.

[0003] An important process for preparing trench MOSFET is etching of SiC wafers. Etching technology is a key supporting technology in the development of SiC devices. In the process of preparing SiC devices, the etching accuracy, etching damage and etching surface residues of the etching process all have an impact on the development and performance of SiC devices.

[0004] In the etching process of SiC wafers, the reaction gas introduced into the deposition and / or etching equipment is excited to generate plasma, which reacts with the SiC wafer to generate polymer while generating gas SiF4. The polymer is deposited on the upper surface of the SiC wafer and the surrounding wall of the etched groove. The polymer deposited on the upper surface of the SiC wafer will be bombarded by high-energy particles and removed. Therefore, the unevenness of polymer deposition will lead to different etching degrees on the surface of the SiC wafer protected by the polymer, which in turn affects the uniformity of the groove of the SiC Trench MOSFET.

[0005] Therefore, improving the non-uniformity of polymer deposition is of great significance for improving the uniformity of SiC Trench MOSFET trenches. Among them, the uniformity of polymer deposition is affected by the exhaust method of deposition and / or etching equipment. The side exhaust method in the prior art negatively affects the uniformity of polymer deposition.

[0006] In addition, similar exhaust problems also exist in etching other wafers (such as silicon wafers) or in other deposition processes of wafers, so the above problems also need to be solved. Summary of the invention

[0007] The object of the present invention is to provide an exhaust gas distribution device, an exhaust gas system having the exhaust gas distribution device, and a deposition and / or etching device having the exhaust gas system, which can solve at least one of the above-mentioned problems.

[0008] In order to achieve the above-mentioned purpose, the present invention proposes an exhaust distribution device, which is used to guide the exhaust direction of the gas to be exhausted in the deposition and / or etching chamber of the deposition and / or etching equipment, and is characterized in that the exhaust distribution device has an exhaust distribution plate and a shielding member, wherein the exhaust distribution plate has a semi-enclosed shape and therefore has a notch, and a plurality of exhaust holes are provided on the exhaust distribution plate, wherein, when the exhaust distribution device is located in the deposition and / or etching chamber of the deposition and / or etching equipment, the shielding member is configured to at least shield the part of the exhaust port of the deposition and / or etching chamber that is above the exhaust distribution plate.

[0009] In some embodiments, when the exhaust distribution device is located in a deposition and / or etching chamber of a deposition and / or etching device, the shielding member also partially shields a portion of the exhaust port of the deposition and / or etching chamber that is below the exhaust distribution plate.

[0010] In some exemplary embodiments, the exhaust gas distribution plate and the cover are connected to each other at an edge of the exhaust gas distribution plate by means of a form fit, a force fit and / or a material fit.

[0011] In some embodiments, the exhaust distribution plate and the shield are a one-piece component.

[0012] In some embodiments, the exhaust gas distribution plate has a notched annular shape, wherein the annular shape follows the shape of a circular ring except for the notch.

[0013] In some embodiments, the exhaust distribution plate has a notched U-shape.

[0014] In some embodiments, at least a portion of the shielding member is disposed along an outer edge of the exhaust distribution plate, and / or a shape of the shielding member is adapted to a shape of a peripheral wall of a deposition and / or etching chamber in which the shielding member is located.

[0015] In some embodiments, the notch and the shielding member are located on opposite sides of the exhaust gas distribution device.

[0016] In some embodiments, the plurality of exhaust holes are evenly distributed on the exhaust distribution plate, and / or the apertures of the exhaust holes are the same.

[0017] In some embodiments, the exhaust distribution plate has a plurality of sub-regions, and the exhaust holes on the plurality of sub-regions are different in the number, density, and / or aperture size of the exhaust holes.

[0018] In some embodiments, the exhaust distribution plate has reinforcing ribs.

[0019] In some embodiments, a receiving space for receiving wafers is defined within the semi-enclosed shape of the exhaust distribution plate.

[0020] In some embodiments, when the exhaust distribution device is located in a deposition and / or etching chamber of a deposition and / or etching device, the notch of the exhaust distribution plate is configured to penetrate the wafer transfer port of the deposition and / or etching chamber and thus form a wafer transfer passage.

[0021] In some embodiments, the exhaust gas distribution plate and / or the shielding member have fastening means for detachably fastening in the deposition and / or etching chamber.

[0022] In addition, the present invention proposes an exhaust system for a deposition and / or etching device, characterized in that the exhaust system has an exhaust distribution device according to the present invention, an exhaust channel downstream of the exhaust distribution device, and an exhaust pump, wherein the exhaust channel leads to a deposition and / or etching chamber of the deposition and / or etching device through an exhaust port, and the shielding member is used to at least shield the portion of the exhaust port of the deposition and / or etching chamber that is above the exhaust distribution plate, so that when the exhaust pump is running, the gas to be exhausted can first be guided downward through the exhaust holes on the exhaust distribution device, and then guided to the portion of the exhaust port located below the exhaust distribution plate below the exhaust distribution plate, and further guided from the exhaust port into the exhaust channel.

[0023] In some embodiments, the shielding member is fastened to the edge of the exhaust port of the deposition and / or etching chamber by means of form fit, force lock and / or material lock.

[0024] In some embodiments, a sealing member is provided between the shielding member and an edge of the exhaust port of the deposition and / or etching chamber.

[0025] In addition, the present invention proposes a deposition and / or etching device, characterized in that the deposition and / or etching device has an exhaust system for the deposition and / or etching device according to the present invention, wherein the deposition and / or etching device has a process table, and the deposition and / or etching chamber of the deposition and / or etching device has a wafer transfer port, wherein the exhaust distribution plate of the exhaust distribution device and the wafer to be etched are both arranged on the process table.

[0026] In some embodiments, the exhaust distribution plate of the exhaust distribution device is detachably mounted on a process table of the deposition and / or etching equipment.

[0027] In some embodiments, the shielding member of the exhaust distribution device is detachably mounted on a peripheral wall of a deposition and / or etching chamber of the deposition and / or etching device.

[0028] In some embodiments, the portion of the exhaust distribution plate provided with the exhaust holes at least partially protrudes beyond the process table.

[0029] In some embodiments, when viewed from above the wafer to be etched, the exhaust distribution plate of the exhaust distribution device at least partially surrounds the wafer to be etched and is spaced apart from the wafer to be etched.

[0030] In some embodiments, the exhaust distribution plate of the exhaust distribution device and the wafer to be etched are on the same horizontal plane.

[0031] In some embodiments, the wafer transfer port and the exhaust distribution plate of the exhaust distribution device are located at the same horizontal plane.

[0032] In some embodiments, the notch of the exhaust distribution plate is configured to penetrate the wafer transfer port of the deposition and / or etching chamber and thus form a wafer transfer passage.

[0033] In some embodiments, the wafer transfer port and the exhaust port are disposed at opposite sides of the deposition and / or etching chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The present invention will be explained in more detail below with the aid of embodiments with reference to the accompanying drawings, but the present invention is not limited to the embodiments described in the drawings and described in detail below. The accompanying drawings are as follows:

[0035] Figure 1 is an exemplary side view of a deposition and / or etching apparatus.

[0036] Figure 2 is an exemplary side view of a deposition and / or etching apparatus according to the present invention.

[0037] Figure 3 yes Figure 1 An exemplary top view of the gas flow direction in the deposition and / or etching chamber of the deposition and / or etching device.

[0038] Figure 4 is an exemplary side view of an exhaust gas distribution device according to the present invention.

[0039] Figure 51 is an exemplary top view of the gas flow direction in the deposition and / or etching chamber of the deposition and / or etching device according to the present invention.

[0040] Figure 6 is to use Figure 1 A cross-sectional view of a wafer etched by a deposition and / or etching device.

[0041] Figure 7 is to use Figure 1 A cross-sectional view of a wafer etched by a deposition and / or etching device. DETAILED DESCRIPTION

[0042] Illustrative embodiments of the exhaust distribution device 1, the exhaust system 100, and the deposition and / or etching device 200 of the present invention are described below. In this specification, for the purpose of explanation only, various systems, structures and devices are schematically depicted in the accompanying drawings, but all features of the actual systems, structures and devices are not described, such as well-known functions or structures are not described in detail to avoid unnecessary details that make the present invention unclear. Of course, it should be understood that in any actual application, many specific implementation decisions need to be made to achieve the specific goals of the developer or user, and system-related and industry-related restrictions need to be followed. These specific goals may vary from one actual application to another. In addition, it should be understood that such specific implementation decisions, although complex and time-consuming, are routine tasks for ordinary technicians in the field who benefit from the present invention.

[0043] The terms and phrases used herein should be understood and interpreted as having a meaning consistent with the understanding of such terms and phrases by those skilled in the relevant art. Consistent usage of a term or phrase herein is not intended to imply a special definition of the term or phrase, i.e., a definition that is different from the ordinary and customary meaning as understood by those skilled in the art. For terms or phrases that are intended to have a special meaning, i.e., a meaning that is different from that understood by those skilled in the art, such special definition will be explicitly listed in the specification as a definition, directly and unambiguously giving the special definition of the term or phrase.

[0044] Unless required by the context, throughout the following specification, the word "include" and variations such as "comprising" and "having" are to be interpreted in an open, inclusive sense, that is, such as "including but not limited to".

[0045] Figure 1A prior deposition and / or etching device 200' is shown. The deposition and / or etching device 200' has a deposition and / or etching chamber 6'. The deposition and / or etching chamber 6' may, for example, have a substantially cylindrical peripheral wall. The deposition and / or etching device 200' has a process table 13' in the deposition and / or etching chamber 6', and a wafer 15' to be deposited and / or etched, such as a silicon carbide wafer or a silicon wafer, may be transferred and placed on the process table 13'. The process table 13' may, for example, be an electrostatic chuck (ESC, Electro-Static Chuck in English), which may generally have an insulator and a base, wherein the wafer 15' to be deposited and / or etched may be transferred and placed on the insulator of the electrostatic chuck. A gas inlet 17' may be provided at the upper part of the deposition and / or etching chamber 6', for example, on the peripheral wall of the deposition and / or etching chamber 6', for introducing the reaction gas into the deposition and / or etching chamber 6'. The gas inlet 17' may be, for example, an opening distributed around the peripheral wall of the deposition and / or etching chamber 6', for uniformly introducing the reaction gas into the deposition and / or etching chamber 6'.

[0046] See also Figure 1 , the deposition and / or etching device 200' further has at least two RF power supplies 18', 19' above and below the process table 13', wherein at least one RF power supply (Source RF) 18' is used to generate and maintain plasma in the deposition and / or etching chamber 6', and at least another RF power supply (Bias RF) 19' is used to control the bombardment intensity and / or direction of high-energy particles in the deposition and / or etching chamber 6'.

[0047] See also Figure 1 , on the peripheral wall of the deposition and / or etching chamber 6' (at Figure 1 In the embodiment of the present invention, the deposition and / or etching device 200' may have a wafer transfer port 14' (on the left peripheral wall section in the figure). Advantageously, the wafer transfer port 14' may be arranged to be substantially flush with or slightly higher than the upper surface of the process table 13' for placing the wafer, so that the wafer 15' may be efficiently transferred into the deposition and / or etching chamber 6' or taken out from the deposition and / or etching chamber 6'. It should be understood that the positional relationship between the wafer transfer port 14' and the upper surface of the process table 13' may be flexibly arranged. In some embodiments, the wafer transfer port 14' may also be arranged to be significantly higher or lower than the upper surface of the process table 13'.

[0048] See also Figure 1, the deposition and / or etching equipment 200' also has an exhaust system 100'. After the wafer 15' is deposited and / or etched, a gas 7' that needs to be exhausted will be generated in the deposition and / or etching chamber 6', which usually includes a polymer. An appropriate amount of uniformly deposited polymer is beneficial in the deposition and / or etching process, but the excess polymer needs to be exhausted together with the reacted gas 7'. The exhaust system 100' is configured to exhaust the reacted gas 7' together with the excess polymer from the deposition and / or etching equipment 200'. The exhaust system 100' may have an exhaust port 8', an exhaust channel 10' and an exhaust pump 11'. The exhaust port 8' is arranged on the peripheral wall of the deposition and / or etching chamber 6' on the side opposite to the wafer transfer port 14'. The exhaust channel 10' leads to the deposition and / or etching chamber 6' of the deposition and / or etching equipment 200' via the exhaust port 8'. See Figure 1 and a more detailed view showing the exhaust gas flow Figure 3 The gas 7' to be exhausted moves from the left to the right along the surface of the deposited and / or etched wafer 15' and enters the exhaust channel 10' from the exhaust port 8' on the right, and is exhausted by means of the exhaust pump 11'.

[0049] exist Figure 1 In the deposition and / or etching device 200' shown, the closer to the exhaust port 8', the easier it is for the gas 7' containing polymer to be discharged to be discharged by the exhaust system 100'. Therefore, less polymer will be deposited on the portion of the wafer 15' close to the exhaust port 8', while more polymer will be deposited on the portion of the wafer 15' located in the middle or away from the exhaust port 8'. The less polymer is deposited, the less protection the surface of the wafer 15' will receive, and the easier it is for the surface of the wafer 15' to be etched in the subsequent etching stage, thus resulting in an uneven etching morphology of the etched wafer 15'.

[0050] See also Figure 6 , which shows exemplary cross-sectional views of the grooves at different positions of the wafer 15' after etching. Among them, the cross-sectional view on the left is the groove at the center of the wafer 15', and the cross-sectional view on the right is the groove of the wafer 15' near the exhaust port 8'. It can be seen that the groove at the center of the wafer 15' is etched shallowly because more polymer is deposited, while the groove near the exhaust port 8' of the wafer 15' is etched deeply because less polymer is deposited. In the experiment, when other etching conditions are the same, the depth of the groove at the center of the wafer 15' is about 10649A, and the depth of the groove near the exhaust port 8' of the wafer 15' is about 11407A, and the difference is 760A.

[0051] Next, combine Figure 2The deposition and / or etching device 200 according to some embodiments of the present invention is exemplified. The deposition and / or etching device 200 according to the present invention has an exhaust system 100 according to the present invention. The exhaust system 100 according to the present invention has an exhaust system 100 according to the present invention. Figure 1 In addition to the components shown in Figure 4 The exhaust gas distribution device 1 is shown in more detail in FIG.

[0052] See also Figure 4 The exhaust gas distribution device 1 according to the present invention may include an exhaust gas distribution plate 2 and a shielding member 3 , wherein the exhaust gas distribution plate 2 may include a plurality of exhaust holes 5 .

[0053] The exhaust gas distribution plate 2 can have a semi-enclosed shape and thus have a notch 16. The exhaust gas distribution plate 2 can, for example, have an annular shape with a notch 16 as shown. Advantageously, the annular shape follows the shape of a ring except for the notch 16, so that a more symmetrical and balanced distribution is obtained. Alternatively, the exhaust gas distribution plate 2 can also have a U-shaped shape with a notch 16.

[0054] The semi-enclosed shape defines an accommodation space for accommodating the wafer 15. That is, the wafer 15 can be arranged in the accommodation space defined by the semi-enclosed shape without positional interference with the exhaust distribution plate 2. Therefore, the exhaust distribution plate 2 of the exhaust distribution device 1 at least partially surrounds the wafer 15 to be etched and is spaced apart from the wafer 15 by a distance.

[0055] In the installed state, the shielding member 3 can be arranged at least partially along the outer edge of the exhaust distribution plate 2. The shape of the shielding member 3 can be adapted to the shape of the peripheral wall of the deposition and / or etching chamber 6 in which it is located and thus abut against the peripheral wall of the deposition and / or etching chamber 6. For example, the shielding member 3 can be configured as or have a plate-like arc-shaped profile structure, and the outer contour of the plate-like arc-shaped profile structure can be adapted to the inner contour of the peripheral wall to be abutted. In some embodiments, the exhaust distribution plate 2 can have one or more reinforcing ribs 9, which are used to increase the rigidity of the exhaust distribution plate 2.

[0056] Combination Figure 2 and 4 The exhaust gas distribution device 1 may be disposed in a deposition and / or etching chamber 6 of a deposition and / or etching device 200 .

[0057] In some embodiments, the exhaust distribution plate 2 and the shielding member 3 can be configured as separate components, which can be installed separately in the deposition and / or etching chamber 6 of the deposition and / or etching device 200. For example, the exhaust distribution plate 2 can be detachably installed on the process table 13 (for example, by means of a force-locking method, such as a bolt connection or a form-fitting method, such as a concave-convex fitting connection), and the shielding member 3 can be detachably installed on the peripheral wall of the deposition and / or etching chamber 6 (for example, by means of a force-locking method, such as a bolt connection or a form-fitting method, such as a concave-convex fitting connection). In order to partially block the exhaust port 8 of the deposition and / or etching chamber 6, the shielding member 3 can be installed on the peripheral wall section of the deposition and / or etching chamber 6 near the exhaust port 8. Therefore, the exhaust distribution device 1 or one of the exhaust distribution plate 2 and the shielding member 3 can be replaced as needed.

[0058] In other embodiments, the exhaust gas distribution plate 2 and the shielding member 3 may also be fixedly arranged in the deposition and / or etching chamber 6 (by means of material bonding, such as welding or bonding).

[0059] Alternatively, the exhaust distribution plate 2 and the shielding member 3 may be preassembled components, for example, the two may be pre-connected to each other by means of form fit, force fit and / or material fit, and at least one of the two may be installed in the deposition and / or etching chamber 6 of the deposition and / or etching device 200 by means of form fit, force fit and / or material fit. For example, the exhaust distribution plate 2 may be installed on the process table 13 and / or the shielding member 3 may be installed on the peripheral wall of the deposition and / or etching chamber 6.

[0060] Alternatively, the exhaust distribution plate 2 and the shielding member 3 may also be an integral component, in particular, an integrally formed component, and at least one of the two may be installed in the deposition and / or etching chamber 6 of the deposition and / or etching device 200 by means of form fit, force lock and / or material lock. For example, the exhaust distribution plate 2 may be installed on the process table 13 and / or the shielding member 3 may be installed on the peripheral wall of the deposition and / or etching chamber 6.

[0061] Advantageously, a sealing member 12 may be provided between the edge of the exhaust port 8 and the shielding member 3 to improve the shielding effect.

[0062] See also Figure 2, the wafer transfer port 14 and the exhaust port 8 of the deposition and / or etching chamber 6 can be arranged at opposite sides of the deposition and / or etching chamber 6. In some embodiments, in order to facilitate the transfer, the wafer transfer port 14 and the exhaust distribution plate 2 and the upper surface of the process table for placing the wafer 15 to be etched can be basically on the same horizontal plane. It should be understood that the positional relationship between the wafer transfer port 14 and the exhaust distribution plate 2 and the upper surface of the process table for placing the wafer 15 to be etched can be flexibly set. The notch 16 of the exhaust distribution plate 2 can be arranged to penetrate the wafer transfer port 14 of the deposition and / or etching chamber 6 and thus form a wafer transfer passage.

[0063] See also Figure 2 In the installed state of the exhaust gas distribution device 1, the shielding member 3 can at least partially extend upward from the exhaust gas distribution plate 2, in particular, extend upward substantially perpendicularly to the exhaust gas distribution plate 2. The shielding member 3 can thereby at least shield the portion of the exhaust port 8 located above the exhaust gas distribution plate 2. Therefore, due to the shielding of the shielding member 3, the gas 7 to be exhausted can be firstly guided downward through the exhaust holes 5 on the exhaust gas distribution plate 2 of the exhaust gas distribution device 1 to a greater extent, and then guided below the exhaust gas distribution plate 2 to the portion of the exhaust port 8 located below the exhaust gas distribution plate 2, and further guided from the exhaust port 8 to the exhaust channel 10.

[0064] In addition, the alternative Figure 2 In the embodiment shown in , the shielding member 3 can also partially shield the portion of the exhaust port 8 below the exhaust distribution plate 2 , as long as the gas 7 to be exhausted can still be exhausted from the exhaust port 8 .

[0065] Advantageously, the portion of the exhaust distribution plate 2 provided with the exhaust holes 5 can at least partially extend beyond the process table 13. Therefore, the gas 7 to be exhausted can be guided downward from the exhaust holes 5 of the exhaust distribution plate 2, and then guided along the outer circumference of the process table 13 and passed to the exhaust port 8.

[0066] In some embodiments, see Figure 5 , the plurality of exhaust holes 5 of the exhaust distribution plate 2 may be evenly distributed on the exhaust distribution plate 2. Additionally or alternatively, the apertures of the exhaust holes 5 may be the same. Therefore, the gas 7 to be exhausted may be uniformly guided downward through the exhaust holes 5 on the exhaust distribution plate 2, and the polymer contained in the gas 7 to be exhausted is thus uniformly deposited on the wafer 15.

[0067] See also Figure 7, which shows a cross-sectional view of the grooves at different positions of the wafer 15 etched by the deposition and / or etching device 200 according to the present invention. Due to the uniformly deposited polymer, the surface of the wafer 15 is basically protected to the same extent, so that the center of the wafer 15 and the part of the wafer 15 near the exhaust port 8 are etched to the same extent, resulting in a uniform etching morphology of the etched wafer 15. In the experiment, under the same other etching conditions, the depth of the groove in the center of the wafer 15 is about 10110A, and the depth of the groove near the exhaust port 8 of the wafer 15 is about 10089A, and the difference is 80A. Therefore, compared with the wafer 15' manufactured by the previous deposition and / or etching device 200', the uniform etching morphology of the wafer 15 is achieved to a large extent.

[0068] In some embodiments, the exhaust distribution plate 2 may have a plurality of sub-regions, and the exhaust holes 5 on the plurality of sub-regions are different in the number, density, and / or aperture size of the exhaust holes 5. Therefore, in such a case, the deposition amount of the polymer in a specific region on the wafer 15 can be preset as required, so that the groove etching depth at different local regions of the wafer 15 can be set as required. In some embodiments, the exhaust distribution plate 2 may have a first sub-region and a second sub-region, wherein the exhaust holes 5 on the first sub-region may be larger than the exhaust holes 5 in the second sub-region in terms of the number, density, and / or aperture of the exhaust holes 5. Thus, the groove etching depth of the first sub-region may be higher than the groove etching depth of the second sub-region. Therefore, the main technical effects that can be achieved by the exhaust distribution device 1, the exhaust system 100, and the deposition and / or etching equipment 200 according to different embodiments of the present invention include but are not limited to at least one of the following:

[0069] 1) The exhaust distribution device 1 can change the direction of the gas to be exhausted 7 so that the uniformity of polymer deposition is not affected by the direction of the gas in the gas to be exhausted 7, thereby not affecting the uniformity of the etched groove depth.

[0070] 2) The exhaust gas distribution device 1 can be used to modify an existing deposition and / or etching device 200 to change the direction of the gas 7 to be exhausted in the deposition and / or etching device 200 .

[0071] 3) The exhaust gas distribution device 1 can be replaced to meet the requirements of etching different wafers 15 .

[0072] 4) Cost-effective equipment improvement is achieved by adding / modifying existing equipment.

[0073] Finally, it should be pointed out that the above embodiments are only used to understand and explain the present invention, and do not limit the protection scope of the present invention. For those skilled in the art, modifications can be made based on the above embodiments, and all these modifications do not depart from the protection scope of the present invention.

Claims

1. An exhaust gas distribution device (1), the exhaust gas distribution device (1) being used to guide the exhaust direction of a gas (7) to be exhausted in a deposition and / or etching chamber (6) of a deposition and / or etching device (200), characterized in that: The exhaust gas distribution device (1) comprises an exhaust gas distribution plate (2) and a shielding member (3), wherein the exhaust gas distribution plate (2) has a semi-enclosed shape and therefore has a notch (16), and a plurality of exhaust holes (5) are provided on the exhaust gas distribution plate (2), wherein, when the exhaust gas distribution device (1) is located in a deposition and / or etching chamber (6) of a deposition and / or etching device (200), the shielding member (3) is configured to at least shield a portion of an exhaust port (8) of the deposition and / or etching chamber (6) that is above the exhaust gas distribution plate (2).

2. The exhaust gas distribution device (1) according to claim 1, characterized in that: When the exhaust distribution device (1) is located in a deposition and / or etching chamber (6) of a deposition and / or etching device (200), the shielding member (3) also partially shields a portion of the exhaust port (8) of the deposition and / or etching chamber (6) that is located below the exhaust distribution plate (2).

3. The exhaust gas distribution device (1) according to claim 1, characterized in that: The exhaust gas distribution plate (2) and the cover (3) are connected to each other at the edge of the exhaust gas distribution plate (2) by means of a form fit, a force fit and / or a material fit.

4. The exhaust gas distribution device (1) according to claim 1, characterized in that: The exhaust gas distribution plate (2) and the shielding member (3) are a one-piece component.

5. The exhaust gas distribution device (1) according to claim 1, characterized in that: The exhaust gas distribution plate (2) has an annular shape with a notch (16), wherein the annular shape follows the shape of a circular ring except for the notch (16).

6. The exhaust gas distribution device (1) according to claim 1, characterized in that The exhaust gas distribution plate (2) has a U-shape with a notch (16).

7. The exhaust gas distribution device (1) according to any one of claims 1 to 6, characterized in that At least part of the shielding member (3) is arranged along the outer edge of the exhaust gas distribution plate (2), and / or the shape of the shielding member (3) is adapted to the shape of the peripheral wall of the deposition and / or etching chamber (6) in which it is located.

8. The exhaust gas distribution device (1) according to any one of claims 1 to 6, characterized in that The notch (16) and the shielding member (3) are located on two opposite sides of the exhaust gas distribution device (1).

9. The exhaust gas distribution device (1) according to any one of claims 1 to 6, characterized in that The plurality of exhaust holes (5) are evenly distributed on the exhaust distribution plate (2), and / or the apertures of the exhaust holes (5) are the same.

10. The exhaust gas distribution device (1) according to any one of claims 1 to 6, characterized in that The exhaust distribution plate (2) has a plurality of sub-regions, and the exhaust holes (5) on the plurality of sub-regions are different in number, density, and / or aperture size of the exhaust holes (5).

11. The exhaust gas distribution device (1) according to any one of claims 1 to 6, characterized in that The exhaust gas distribution plate (2) has reinforcing ribs (9).

12. The exhaust gas distribution device (1) according to any one of claims 1 to 6, characterized in that The semi-enclosed shape of the exhaust distribution plate (2) defines an accommodation space for accommodating a wafer (15).

13. The exhaust gas distribution device (1) according to any one of claims 1 to 6, characterized in that When the exhaust distribution device (1) is located in a deposition and / or etching chamber (6) of a deposition and / or etching device (200), the notch (16) of the exhaust distribution plate (2) is arranged to be connected to a wafer transfer port (14) of the deposition and / or etching chamber (6) and thus form a wafer transfer passage.

14. The exhaust gas distribution device (1) according to any one of claims 1 to 6, characterized in that The exhaust gas distribution plate (2) and / or the shielding member (3) have a fastening device for detachably fastening in the deposition and / or etching chamber (6).

15. An exhaust system (100) for a deposition and / or etching device, characterized in that: The exhaust system (100) comprises an exhaust distribution device (1) according to any one of claims 1 to 14, an exhaust channel (10) downstream of the exhaust distribution device (1), and an exhaust pump (11), wherein the exhaust channel (10) leads to a deposition and / or etching chamber (6) of a deposition and / or etching device (200) through an exhaust port (8), and the shielding member (3) is used to at least shield a portion of the exhaust port (8) of the deposition and / or etching chamber (6) that is above the exhaust distribution plate (2), so that when the exhaust pump (11) is running, the gas (7) to be exhausted can first be guided downward through the exhaust hole (5) on the exhaust distribution device (1), and then guided below the exhaust distribution plate (2) to the portion of the exhaust port (8) that is below the exhaust distribution plate (2), and further guided from the exhaust port (8) into the exhaust channel (10).

16. The exhaust system (100) for a deposition and / or etching device according to claim 15, characterized in that: The shielding member (3) is fastened to the edge of the exhaust port (8) of the deposition and / or etching chamber (6) by means of form fit, force lock and / or material lock.

17. The exhaust system (100) for a deposition and / or etching device according to claim 15 or 16, characterized in that: A sealing member (12) is provided between the shielding member (3) and the edge of the exhaust port (8) of the deposition and / or etching chamber (6).

18. A deposition and / or etching device (200), characterized in that: The deposition and / or etching device (200) has an exhaust system (100) for a deposition and / or etching device according to any one of claims 15 to 17, wherein the deposition and / or etching device (200) has a process table (13), and a deposition and / or etching chamber (6) of the deposition and / or etching device (200) has a wafer transfer port (14), wherein the exhaust distribution plate (2) of the exhaust distribution device (1) and the wafer (15) to be etched are both arranged on the process table (13).

19. The deposition and / or etching device (200) according to claim 18, characterized in that The exhaust gas distribution plate (2) of the exhaust gas distribution device (1) is detachably mounted on a process table (13) of the deposition and / or etching equipment (200).

20. The deposition and / or etching device (200) according to claim 18, characterized in that The shielding member (3) of the exhaust gas distribution device (1) is detachably mounted on the peripheral wall of the deposition and / or etching chamber (6) of the deposition and / or etching equipment (200).

21. The deposition and / or etching device (200) according to claim 18, characterized in that The portion of the exhaust distribution plate (2) provided with the exhaust holes (5) at least partially protrudes beyond the process table (13).

22. The deposition and / or etching device (200) according to any one of claims 18 to 21, characterized in that When viewed from above the wafer (15) to be etched, the exhaust gas distribution plate (2) of the exhaust gas distribution device (1) at least partially surrounds the wafer (15) to be etched and is spaced apart from the wafer (15) to be etched.

23. The deposition and / or etching device (200) according to any one of claims 18 to 21, characterized in that: The exhaust gas distribution plate (2) of the exhaust gas distribution device (1) and the wafer (15) to be etched are located on the same horizontal plane.

24. The deposition and / or etching device (200) according to claim 23, characterized in that The wafer transfer port (14) and the exhaust gas distribution plate (2) of the exhaust gas distribution device (1) are located on the same horizontal plane.

25. The deposition and / or etching device (200) according to claim 24, characterized in that The notch (16) of the exhaust distribution plate (2) is arranged to be connected to the wafer transfer port (14) of the deposition and / or etching chamber (6) and thus form a wafer transfer passage.

26. The deposition and / or etching device (200) according to any one of claims 18 to 21, characterized in that The wafer transfer port (14) and the exhaust port (8) are arranged on two opposite sides of the deposition and / or etching chamber (6).

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