Semiconductor device

Abstract

The invention discloses a semiconductor device. The semiconductor device includes: a housing; a substrate; the switching devices are all single chips; the plurality of high-side switching devices and the plurality of low-side switching devices jointly form a first switching device group and a second switching device group, the switching devices are mutually spaced, and any two adjacent switching devices in the first direction are the high-side switching device and the low-side switching device respectively. Therefore, the high-side switching devices in the first switching device group correspond to the low-side switching devices in the second switching device group in the second direction, so that the low-side switching devices in the first switching device group correspond to the high-side switching devices in the second switching device group in the second direction; therefore, the high-side switching devices and the low-side switching devices can be distributed more uniformly and reasonably, the heat dissipation performance of the semiconductor device can be improved, the circuit inductance can be reduced, and further, the working performance of the semiconductor device can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Art

[0002] With the development of semiconductor chip technology and packaging technology, semiconductor devices are increasingly being used. Semiconductor devices can control the direction and magnitude of current in a circuit by controlling the on and off of switch devices in a half-bridge module to meet the needs of different loads.

[0003] In the related art, a power semiconductor half-bridge module is composed of two chipsets, IGBT and FRD, forming an upper bridge or a lower bridge, or multiple chipsets forming an upper bridge or a lower bridge. As RC-IGBT chips have advantages such as single chip miniaturization and are widely used, there is a need to provide a power semiconductor half-bridge module with uniform heat dissipation and low inductance formed by a single RC-IGBT or MOSFET chip. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one object of the present invention is to provide a semiconductor device with better heat dissipation performance and lower circuit inductance.

[0005] According to the semiconductor device of the present invention, it comprises: a shell; a substrate, the substrate is arranged in the shell, and the two sides of the substrate in the first direction are set to be the first side and the second side respectively, and the two sides of the substrate in the second direction are set to be the third side and the fourth side respectively; a switch device, the switch device is arranged on the substrate and includes a plurality of high-side switch devices and a plurality of low-side switch devices, and the high-side switch devices and the low-side switch devices are both single chips; the plurality of high-side switch devices and the plurality of low-side switch devices together constitute a first switch device group and a second switch device group, the first switch device group is arranged adjacent to the third side, the second switch device group is arranged adjacent to the fourth side and is spaced apart from the first switch device group in the second direction, and the first switch device group includes The first switch device group includes a plurality of high-side switch devices and a plurality of low-side switch devices spaced from each other in the first direction, and any two adjacent switch devices in the first switch device group are respectively the high-side switch device and the low-side switch device; the second switch device group includes a plurality of high-side switch devices and a plurality of low-side switch devices spaced from each other in the first direction, and any two adjacent switch devices in the second switch device group are respectively the high-side switch device and the low-side switch device, the high-side switch devices in the first switch device group and the low-side switch devices in the second switch device group correspond to each other in the second direction, and the low-side switch devices in the first switch device group and the high-side switch devices in the second switch device group correspond to each other in the second direction.

[0006] Therefore, by making the high-side switch devices in the first switch device group and the low-side switch devices in the second switch device group correspond to each other in the second direction, and making the low-side switch devices in the first switch device group and the high-side switch devices in the second switch device group correspond to each other in the second direction, the distribution of the high-side switch devices and the low-side switch devices can be made more uniform and reasonable, which can not only improve the heat dissipation performance of the semiconductor device, but also reduce the circuit inductance, and further improve the working performance of the semiconductor device.

[0007] In some examples of the present invention, the projections of the high-side switch devices in the first switch device group and the low-side switch devices in the second switch device group in the second direction overlap with each other; and / or the projections of the low-side switch devices in the first switch device group and the high-side switch devices in the second switch device group overlap with each other.

[0008] In some examples of the present invention, the first side of the substrate is provided with a positive potential external terminal and a negative potential external terminal, and the second side of the substrate is provided with a load terminal.

[0009] In some examples of the present invention, a plurality of the high-side switch devices are selectively and simultaneously electrically connected to the positive potential external terminal; or a plurality of the low-side switch devices are selectively and simultaneously electrically connected to the negative potential external terminal.

[0010] In some examples of the present invention, a positive conductive belt and a negative conductive belt are further included, wherein the positive conductive belt is spaced apart on a side of the switching device in a third direction away from the substrate, one end of the positive conductive belt is electrically connected to the positive potential external terminal, and the positive conductive belt is electrically connected to the plurality of high-side switching devices; the negative conductive belt is spaced apart on a side of the switching device in a third direction away from the substrate and spaced apart from the positive conductive belt in the third direction, one end of the negative conductive belt is electrically connected to the negative potential external terminal, and the negative conductive belt is electrically connected to the plurality of low-side switching devices, wherein the first direction, the second direction and the third direction are arranged perpendicular to each other.

[0011] In some examples of the present invention, the positive conductive strip and the positive potential external terminal are integrally formed structural members; and / or the negative conductive strip and the negative potential external terminal are integrally formed structural members.

[0012] In some examples of the present invention, the positive conductive strip and the positive potential external terminal are separate structural components and contact each other; and / or the negative conductive strip and the negative potential external terminal are separate structural components and contact each other.

[0013] In some examples of the present invention, a plurality of high-side electrical connection terminals and a plurality of low-side electrical connection terminals are also provided on the substrate, the plurality of high-side electrical connection terminals are electrically connected to the plurality of high-side switching devices one-to-one, the plurality of high-side electrical connection terminals are electrically connected to the positive conductive strips, the plurality of low-side electrical connection terminals are electrically connected to the plurality of low-side switching devices one-to-one, and the plurality of low-side electrical connection terminals are electrically connected to the negative conductive strips.

[0014] In some examples of the present invention, the high-side electrical connection terminal intervals in the first switching device group are arranged on the side of the high-side switching device in the second direction toward the third side, and the low-side electrical connection terminal intervals in the first switching device group are arranged on the side of the low-side switching device in the second direction toward the third side; the high-side electrical connection terminal intervals in the second switching device group are arranged on the side of the high-side switching device in the second direction toward the fourth side, and the low-side electrical connection terminal intervals in the second switching device group are arranged on the side of the low-side switching device in the second direction toward the fourth side.

[0015] In some examples of the present invention, the high-side electrical connection base island and the low-side electrical connection base island are arranged on the substrate, the high-side electrical connection base island and the low-side electrical connection base island are electrically isolated from each other from the substrate, the high-side switching device and the high-side electrical connection terminal are both arranged on the high-side electrical connection base island and electrically connected to the high-side electrical connection base island, one side of the high-side switching device in the third direction is electrically connected to the high-side electrical connection base island, and the other side of the high-side switching device in the third direction is electrically connected to the substrate, the high-side electrical connection terminal in the first switching device group is arranged on a side of the high-side electrical connection base island that is closer to the first side of the substrate in the first direction, and the high-side electrical connection terminal in the second switching device group is arranged on a side of the high-side electrical connection base island that is closer to the second side of the substrate in the first direction; the first switching device group The low-side electrical connection base island interval is arranged on the side of the low-side switching device in the second direction toward the third side, the low-side electrical connection base island interval in the second switching device group is arranged on the side of the low-side switching device in the second direction toward the fourth side, the low-side electrical connection terminal is arranged on the low-side electrical connection base island and is electrically connected to the low-side electrical connection base island, one side of the low-side switching device in the third direction is electrically connected to the substrate, and the other side of the low-side switching device in the third direction is electrically connected to the low-side electrical connection base island, the low-side electrical connection terminal in the first switching device group is arranged on the side of the low-side electrical connection base island that is closer to the second side of the substrate in the first direction, and the low-side electrical connection terminal in the second switching device group is arranged on the side of the low-side electrical connection base island that is closer to the first side of the substrate in the first direction.

[0016] In some examples of the present invention, the positive conductive strip is provided with a plurality of positive electrical connection posts, which are extended in a third direction and are electrically connected to the plurality of high-side electrical connection terminals; the negative conductive strip is provided with a plurality of negative electrical connection posts, which are extended in a third direction and are electrically connected to the plurality of low-side electrical connection terminals.

[0017] In some examples of the present invention, the projection of the positive conductive tape in the third direction coincides with the projection of the low-side electrical connection terminal in the third direction, the negative conductive tape is spaced apart on the side of the positive conductive tape in the third direction away from the switching device, an avoidance hole is provided on the positive conductive tape, the negative electrical connection column passes through the avoidance hole and is in contact and electrically connected with the low-side electrical connection terminal; and / or the negative electrical connection column is provided with a bending portion, the bending portion avoids the positive conductive tape so that the negative electrical connection column is in contact and electrically connected with the low-side electrical connection terminal.

[0018] In some examples of the present invention, the projection of the negative conductive band in the third direction coincides with the projection of the high-side electrical connection terminal in the third direction, the positive conductive band is spaced apart on the side of the negative conductive band in the third direction away from the switching device, an avoidance hole is provided on the negative conductive band, the positive electrical connection column passes through the avoidance hole and is in contact and electrically connected with the high-side electrical connection terminal; and / or the positive electrical connection column is provided with a bending portion, the bending portion avoids the negative conductive band so that the positive electrical connection column is in contact and electrically connected with the high-side electrical connection terminal.

[0019] In some examples of the present invention, the high-side electrical connection base island and the low-side electrical connection base island are arranged on the substrate, the high-side electrical connection base island and the low-side electrical connection base island are electrically isolated from each other from the substrate, the high-side switching device and the high-side electrical connection terminal are both arranged on the high-side electrical connection base island and electrically connected to the high-side electrical connection base island, one side of the high-side switching device in the third direction is electrically connected to the high-side electrical connection base island, and the other side of the high-side switching device in the third direction is electrically connected to the substrate, the high-side electrical connection terminal in the first switching device group is arranged on a side of the high-side electrical connection base island that is closer to the first side of the substrate in the first direction, and the high-side electrical connection terminal in the second switching device group is arranged on a side of the high-side electrical connection base island that is closer to the first side of the substrate in the first direction; the first switching device group The low-side electrical connection base island interval is arranged on the side of the low-side switching device in the second direction toward the third side, the low-side electrical connection base island interval in the second switching device group is arranged on the side of the low-side switching device in the second direction toward the fourth side, the low-side electrical connection terminal is arranged on the low-side electrical connection base island and is electrically connected to the low-side electrical connection base island, one side of the low-side switching device in the third direction is electrically connected to the substrate, and the other side of the low-side switching device in the third direction is electrically connected to the low-side electrical connection base island, the low-side electrical connection terminal in the first switching device group is arranged on the side of the low-side electrical connection base island that is closer to the second side of the substrate in the first direction, and the low-side electrical connection terminal in the second switching device group is arranged on the side of the low-side electrical connection base island that is closer to the second side of the substrate in the first direction.

[0020] In some examples of the present invention, the positive conductive strip is provided with a plurality of positive electrical connection posts, which are extended in a third direction and are electrically connected to the plurality of high-side electrical connection terminals; the negative conductive strip is provided with a plurality of negative electrical connection posts, which are extended in a third direction and are electrically connected to the plurality of low-side electrical connection terminals.

[0021] In some examples of the present invention, the projection of the positive conductive tape in the third direction and the projection of the low-side electrical connection terminal in the third direction are spaced apart from each other, the negative electrical connection column extends in the third direction and is spaced apart from the positive conductive tape, and the negative electrical connection column is in contact and electrically connected with the low-side electrical connection terminal.

[0022] In some examples of the present invention, a first electrical connection line and a second electrical connection line are also included, wherein the first electrical connection line is extended in the second direction, the first end of the first electrical connection line in the second direction is electrically connected to the high-side switching device, and the second end of the first electrical connection line in the second direction is electrically connected to the spacing area between the first switching device group and the second switching device group corresponding to the substrate; the second electrical connection line is extended in the second direction and is electrically connected between the low-side switching device and the low-side electrical connection base island.

[0023] In some examples of the present invention, the positive conductive band includes a positive conductive first band segment and a positive conductive band segment group, the positive conductive band segment group includes a positive conductive second band segment, a positive conductive third band segment and a first positive connection band segment, the positive conductive first band segment is extended in the first direction, one end of the positive conductive first band segment in the first direction is electrically connected to the positive potential external terminal, the other end of the positive conductive first band segment in the first direction is connected to the positive conductive second band segment, the positive conductive first band segment is at least partially electrically connected to the high-side electrical connection terminal in the first switching device group adjacent to the first side, the positive conductive second band segment is extended in the second direction, one end of the positive conductive second band segment in the second direction adjacent to the fourth side is electrically connected to the high-side electrical connection terminal in the second switching device group, and the positive conductive third band segment is in the second direction. The positive conductive third band segment is extended, one end of the positive conductive third band segment adjacent to the third side in the second direction is electrically connected to the high-side electrical connection terminal in the first switching device group, the first positive connection band segment is extended in the first direction and connected between one end of the positive conductive second band segment adjacent to the fourth side and one end of the positive conductive third band segment adjacent to the fourth side, and there is at least one positive conductive band segment group; when there are multiple positive conductive band segment groups, two adjacent positive conductive band segment groups are set to be the first positive conductive band segment group and the second positive conductive band segment group, respectively, a second positive connection band segment is connected between one end of the positive conductive third band segment in the first positive conductive band segment group adjacent to the third side and one end of the positive conductive second band segment in the second positive conductive band segment group adjacent to the third side, and the second positive connection band segment is extended in the first direction.

[0024] In some examples of the present invention, the negative conductive band includes a negative conductive first band segment and a negative conductive band segment group, the negative conductive band segment group includes a negative conductive second band segment, a negative conductive third band segment and a first negative connection band segment, the negative conductive first band segment is extended in the first direction and is spaced apart from the positive conductive first band segment in the second direction, one end of the negative conductive first band segment in the first direction is electrically connected to the negative potential external terminal in the second switching device group adjacent to the first side, the other end of the negative conductive first band segment in the first direction is connected to the negative conductive second band segment, the negative conductive first band segment is at least partially electrically connected to the low-side electrical connection terminal, the negative conductive second band segment is extended in the second direction, one end of the negative conductive second band segment in the second direction adjacent to the third side is electrically connected to the low-side electrical connection terminal in the first switching device group, and the negative conductive third band segment is extended in the second direction , one end of the negative conductive third band segment adjacent to the fourth side in the second direction is electrically connected to the low-side electrical connection terminal in the second switching device group, the negative conductive second band segment and the negative conductive third band segment are spaced apart in the first direction, the first negative connection band segment is extended in the first direction and connected between one end of the negative conductive second band segment adjacent to the third side and one end of the negative conductive third band segment adjacent to the third side, and there is at least one negative conductive band segment group; when there are multiple negative conductive band segment groups, two adjacent negative conductive band segment groups are set to be the first negative conductive band segment group and the second negative conductive band segment group, respectively, a second negative connection band segment is connected between one end of the negative conductive third band segment in the first negative conductive band segment group adjacent to the fourth side and one end of the negative conductive second band segment in the second negative conductive band segment group adjacent to the fourth side, and the second negative connection band segment is extended in the first direction.

[0025] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0027] Figure 1 is a schematic diagram of a semiconductor device according to an embodiment of the present invention;

[0028] Figure 2 is a schematic diagram of a semiconductor device according to an embodiment of the present invention;

[0029] Figure 3 is a schematic diagram of a semiconductor device according to an embodiment of the present invention;

[0030] Figure 4is a schematic diagram of a semiconductor device according to an embodiment of the present invention;

[0031] Figure 5 is a schematic diagram of a semiconductor device according to an embodiment of the present invention;

[0032] Figure 6 is a schematic diagram of a semiconductor device according to an embodiment of the present invention.

[0033] Reference numerals:

[0034] 100. Semiconductor devices;

[0035] 1. first side; 2. second side; 3. third side; 4. fourth side;

[0036] 10. substrate; 101. positive potential external terminal; 102. negative potential external terminal; 103. load terminal; 104. positive conductive tape; 105. negative conductive tape;

[0037] 1041, positive conductive first band segment; 1042, positive conductive band segment group; 1043, positive conductive second band segment; 1044, positive conductive third band segment; 1045, first positive connecting band segment; 1046, second positive connecting band segment;

[0038] 1051, negative conductive first band segment; 1052, negative conductive band segment group; 1053, negative conductive second band segment; 1054, negative conductive third band segment; 1055, first negative connecting band segment; 1056, second negative connecting band segment;

[0039] 5. The first switching device group; 6. The second switching device group; 201. The high-side switching device; 202. The low-side switching device; 203. The high-side electrical connection terminal; 204. The low-side electrical connection terminal; 205. The high-side electrical connection base island; 206. The low-side electrical connection base island; 207. The first electrical connection line; 208. The second electrical connection line. DETAILED DESCRIPTION

[0040] Embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention are described in detail below.

[0041] Reference below Figure 1-Figure 6 A semiconductor device 100 according to an embodiment of the present invention is described. The semiconductor device 100 may be applied to a power semiconductor half-bridge module.

[0042] Combination Figure 1-Figure 6As shown, the semiconductor device 100 according to the present invention may mainly include: a housing, a substrate 10 and a switch device. The housing may not only encapsulate the semiconductor chip and its related circuit elements to form a complete device unit, but also provide a physical barrier to prevent the semiconductor device inside the housing from being damaged during transportation, installation and use, thereby ensuring the stability and reliability of the semiconductor device 100.

[0043] Furthermore, the substrate 10 is arranged in the shell, and the two sides of the first direction of the substrate 10 are set to be the first side 1 and the second side 2, and the two sides of the second direction of the substrate 10 are set to be the third side 3 and the fourth side 4, so that the substrate 10 can not only provide an installation position and physical support for semiconductor chips and related circuit elements, but also circuits can be built on the substrate 10, thereby facilitating the connection and application of semiconductor chips with external circuits.

[0044] Furthermore, the switching device is arranged on the substrate 10 and includes multiple high-side switching devices 201 and multiple low-side switching devices 202. The high-side switching devices 201 and the low-side switching devices 202 are both single chips, wherein the high-side switching devices 201 usually process high-voltage signals, and the low-side switching devices 202 process low-voltage signals. By controlling the conduction and cutoff of the high-side switching devices 201 and the low-side switching devices 202, the current and voltage passing through the load in the circuit can be controlled, which can protect the circuit and help improve the stability and safety of the circuit.

[0045] Furthermore, multiple high-side switch devices 201 and multiple low-side switch devices 202 together constitute a first switch device group 5 and a second switch device group 6. The first switch device group 5 is arranged adjacent to the third side 3, and the second switch device group 6 is arranged adjacent to the fourth side 4 and is spaced apart from the first switch device group 5 in the second direction. This not only prevents accidental contact or mutual interference between the first switch device group 5 and the second device switch group, but also makes the structure of the semiconductor device 100 more balanced and stable.

[0046] Further, the first switch device group 5 includes a plurality of high-side switch devices 201 and a plurality of low-side switch devices 202 spaced from each other in the first direction, and any two adjacent switch devices in the first switch device group 5 are respectively a high-side switch device 201 and a low-side switch device 202; the second switch device group 6 includes a plurality of high-side switch devices 201 and a plurality of low-side switch devices 202 spaced from each other in the first direction, and any two adjacent switch devices in the second switch device group 6 are respectively a high-side switch device 201 and a low-side switch device 202. Such an arrangement can not only avoid mutual influence between the high-side switch device 201 and the low-side switch device 202, but also reduce circuit failures caused by accidental contact or short circuit, and improve the integrity and reliability of circuit signals. In addition, it can also be beneficial to the heat dissipation of the circuit, and can prevent the heat dissipation difficulty caused by the too compact layout of the switch devices, and avoid the switch device performance degradation or switch device damage caused by this, so as to extend the service life of the high-side switch device 201 and the low-side switch device 202, and improve the stability and reliability of the semiconductor device 100.

[0047] Further, the high-side switch device 201 in the first switch device group 5 and the low-side switch device 202 in the second switch device group 6 correspond to each other in the second direction, and the low-side switch device 202 in the first switch device group 5 and the high-side switch device 201 in the second switch device group 6 correspond to each other in the second direction. In this way, any two adjacent switch devices in the second direction are respectively the high-side switch device 201 and the low-side switch device 202, and the staggered layout and interval arrangement of the high-side switch device 201 and the low-side switch device 202 can be realized on the substrate 10 as a whole. Since the high-side switch device 201 and the low-side switch device 202 are not turned on at the same time, this can not only disperse the heat generation area of ​​the semiconductor device 100, effectively improve the heat dissipation effect of the semiconductor device 100, but also reduce the circuit inductance, and can reduce the impact of a certain switch device failure on the adjacent switch devices, which is convenient for rapid positioning and diagnosis of the faulty device, and improves the maintainability and maintenance efficiency of the system.

[0048] Furthermore, a reasonable staggered layout and spacing setting are also beneficial to the overall wiring planning and circuit connection, which can not only make the lines of the high-side switch device 201 and the low-side switch device 202 more regular and orderly, but also reduce the complexity and difficulty of wiring, reduce the crossing and interference between lines, and improve the stability and reliability of the circuit.

[0049] In addition, the high-side switch device 201 and the low-side switch device 202 are staggered. Under the premise of meeting the heat dissipation requirements, the distance between two adjacent switch devices can be appropriately reduced. This can more effectively utilize the space within the limited substrate 10 space or packaging space, making the circuit layout more compact, which is conducive to the miniaturization and integration of the semiconductor device 100.

[0050] Therefore, by making the high-side switch device 201 in the first switch device group 5 and the low-side switch device 202 in the second switch device group 6 correspond to each other in the second direction, and making the low-side switch device 202 in the first switch device group 5 and the high-side switch device 201 in the second switch device group 6 correspond to each other in the second direction, the distribution of the high-side switch device 201 and the low-side switch device 202 can be made more uniform and reasonable, thereby not only improving the heat dissipation performance of the semiconductor device 100, but also reducing the circuit inductance, and further, improving the working performance of the semiconductor device 100.

[0051] In some embodiments of the present invention, the number of high-side switch devices 201 and the number of low-side switch devices 202 are equal to ensure the stability and reliability of the structure and circuit of the semiconductor device 100 .

[0052] In some embodiments of the present invention, the high-side switch device 201 and the low-side switch device 202 are disposed on a substrate structure.

[0053] In some embodiments of the present invention, the projections of the high-side switch device 201 in the first switch device group 5 and the low-side switch device 202 in the second switch device group 6 in the first direction overlap with each other; and / or the projections of the low-side switch device 202 in the first switch device group 5 and the high-side switch device 201 in the second switch device group 6 in the first direction overlap with each other, and the spacing distance between the first switch device group 5 and the second switch device group 6 can also be increased, so that the projections of the high-side switch device 201 in the first switch device group 5 and the low-side switch device 202 in the second switch device group 6 in the first direction are at least partially staggered with each other; and / or the projections of the low-side switch device 202 in the first switch device group 5 and the high-side switch device 201 in the second switch device group 6 in the first direction are at least partially staggered with each other, which can further improve the heat dissipation performance of the semiconductor device.

[0054] Combination Figure 1 and Figure 2 As shown, the projections of the high-side switch device 201 in the first switch device group 5 and the low-side switch device 202 in the second switch device group 6 in the second direction overlap with each other; and / or

[0055] The projections of the low-side switch device 202 in the first switch device group 5 and the high-side switch device 201 in the second switch device group 6 in the second direction overlap with each other.

[0056] With such arrangement, each column of high-side switch devices 201 and low-side switch devices 202 in the second direction are located on a straight line. This not only allows the layout of the high-side switch devices 201 and the low-side switch devices 202 in the second direction to be neat and compact and improve space utilization, but also facilitates operations such as installation and maintenance of the high-side switch devices 201 and the low-side switch devices 202.

[0057] Combination Figure 3 , Figure 4 , Figure 5 and Figure 6 As shown, a positive potential external terminal 101 and a negative potential external terminal 102 are provided on a first side 1 of the substrate 10 , and a load terminal 103 is provided on a second side 2 of the substrate 10 .

[0058] By arranging the positive potential external terminal 101 and the negative potential external terminal 102 on the first side 1 of the substrate 10 and arranging the load terminal 103 on the second side 2 of the substrate 10, it is convenient to lay the circuit elements required to pass from the potential end to the load end on the substrate 10, thereby not only reducing the wiring difficulty, but also making the structural layout of the semiconductor device 100 more uniform and reasonable.

[0059] Furthermore, the positive potential external terminal 101 and the negative potential external terminal 102 are respectively arranged at the two ends of the first side 1 of the substrate 10, and the positive potential external terminal 101 is arranged on the outer side of the high-side switching device 201 close to the edge of the substrate 10, and the negative potential external terminal 102 is arranged on the outer side of the low-side switching device 202 close to the edge of the substrate 10. This arrangement not only makes the positive and negative potentials close to each other, which is beneficial to reducing the circuit inductance, but also makes a certain spacing distance between the positive potential external terminal 101 and the negative potential external terminal 102, so as to avoid mutual interference between the positive potential external terminal 101 and the negative potential external terminal 102, and meet the creepage distance while avoiding the risk of short circuit. In addition, it can also facilitate the connection between the high-side switching device 201 and the positive potential external terminal 101, and the connection between the low-side switching device 202 and the negative potential external terminal 102, which can ensure the reasonable layout of each structure on the substrate 10 and improve the working performance of the semiconductor device 100.

[0060] In some embodiments of the present invention, the load terminal 103 is disposed on the substrate structure.

[0061] Combination Figure 1-Figure 6As shown, a plurality of high-side switch devices 201 are selectively and simultaneously electrically connected to the positive potential external terminal 101 ; or a plurality of low-side switch devices 202 are selectively and simultaneously electrically connected to the negative potential external terminal 102 .

[0062] With such an arrangement, the high-side switch device 201 and the low-side switch device 202 can be turned on at different times, and the development devices that are turned on in each column or row at any time can be staggered rather than adjacently distributed in the same row. This not only ensures the normal operation of the circuit of the semiconductor device 100, but also expands the heat dissipation area of ​​the same number of switch devices, making the heat dissipation more uniform, thereby improving the heat dissipation effect of the semiconductor device 100, improving the stability and reliability of the semiconductor device 100, and extending the service life of the switch device.

[0063] Combination Figure 3 , Figure 4 , Figure 5 and Figure 6 As shown, the semiconductor device 100 further includes a positive conductive tape 104 and a negative conductive tape 105, the positive conductive tape 104 is arranged at intervals on a side of the switch device away from the substrate 10 in the third direction, one end of the positive conductive tape 104 is electrically connected to the positive potential external terminal 101, and the positive conductive tape 104 is electrically connected to a plurality of high-side switch devices 201;

[0064] The negative conductive tape 105 is spaced apart on a side of the switching device in the third direction away from the substrate 10 and is spaced apart from the positive conductive tape 104 in the third direction, one end of the negative conductive tape 105 is electrically connected to the negative potential external terminal 102, and the negative conductive tape 105 is electrically connected to a plurality of low-side switching devices 202, wherein the first direction, the second direction and the third direction are arranged perpendicular to each other.

[0065] The positive conductive belt 104 and the negative conductive belt 105 are both spaced apart on the side of the switching device away from the substrate 10 in the third direction, and the negative conductive belt 105 and the positive conductive belt 104 are spaced apart in the third direction. This can not only provide a certain degree of protection for the circuit on the conductive belt, but also prevent the positive conductive belt 104 and the negative conductive belt 105 from interfering with or influencing each other.

[0066] Furthermore, both the positive conductive tape 104 and the negative conductive tape 105 can serve as current paths. The positive conductive tape 104 can be used to achieve electrical connection between the high-side switching device 201 and the positive potential external terminal 101, and the negative conductive tape 105 can be used to achieve electrical connection between the low-side switching device 202 and the negative potential external terminal 102. In addition, the circuit voltage drop can be reduced, so that the switching devices and electronic components on the substrate 10 can obtain a stable operating voltage, which can improve the operating performance of the semiconductor device 100.

[0067] It should be noted that an insulation design is required between the positive conductive band 104 and the negative conductive band 105. This can not only prevent the positive conductive band 104 and the negative conductive band 105 from being accidentally connected, thereby affecting the normal function of the semiconductor device 100, but also prevent the semiconductor device 100 from leaking electricity, thereby ensuring the stability and reliability of the semiconductor device 100 and improving the working performance of the semiconductor device 100.

[0068] Combination Figure 3 , Figure 4 , Figure 5 and Figure 6 As shown, the positive conductive tape 104 and the positive potential external terminal 101 are integrally formed structural members; and / or the negative conductive tape 105 and the negative potential external terminal 102 are integrally formed structural members. Such an arrangement can not only ensure the current path between the positive potential external terminal 101 and the positive conductive tape 104 and the current path between the negative potential external terminal 102 and the negative conductive tape 105, but also ensure the normal operation of the semiconductor device 100 circuit, and can also make the structure of the semiconductor device 100 simpler, and can simplify the installation process of the semiconductor device 100.

[0069] Combination Figure 3 , Figure 4 , Figure 5 and Figure 6 As shown, the positive conductive tape 104 and the positive potential external terminal 101 are separate structural parts and contact each other; and / or the negative conductive tape 105 and the negative potential external terminal 102 are separate structural parts and contact each other. Such an arrangement can not only ensure the current path between the positive potential external terminal 101 and the positive conductive tape 104 and the current path between the negative potential external terminal 102 and the negative conductive tape 105, but also ensure the normal operation of the semiconductor device 100 circuit, and also facilitate the adjustment, maintenance and replacement of the positive potential external terminal 101 and the negative potential external terminal 102.

[0070] Combination Figure 3 , Figure 4 , Figure 5 and Figure 6 As shown, after the semiconductor device 100 is powered on, in the current loop of multiple high-side switching devices 201, the current direction of the load terminal 103 is opposite to the current direction of the positive potential external terminal 101, or in the current loop of multiple low-side switching devices 202, the current direction of the load terminal 103 is opposite to the current direction of the negative potential external terminal 102. In this way, mutual inductance effect can be achieved, circuit inductance can be reduced, and the stability and reliability of the semiconductor device 100 can be further improved.

[0071] Combination Figure 1 and Figure 2As shown, a plurality of high-side electrical connection terminals 203 and a plurality of low-side electrical connection terminals 204 are also provided on the substrate 10. The plurality of high-side electrical connection terminals 203 are electrically connected to the plurality of high-side switching devices 201 in a one-to-one correspondence, the plurality of high-side electrical connection terminals 203 are electrically connected to the positive conductive strip 104, the plurality of low-side electrical connection terminals 204 are electrically connected to the plurality of low-side switching devices 202 in a one-to-one correspondence, and the plurality of low-side electrical connection terminals 204 are electrically connected to the negative conductive strip 105.

[0072] Such a configuration can realize electrical connection between multiple high-side switching devices 201 and the positive conductive band 104, and electrical connection between multiple low-side switching devices 202 and the negative conductive band 105, which can ensure the subsequent normal operation of the multiple high-side switching devices 201 and the multiple low-side switching devices 202, and can ensure the normal operation of the circuit of the semiconductor device 100.

[0073] Combination Figure 1 and Figure 2 As shown, the high-side electrical connection terminals 203 in the first switch device group 5 are arranged at intervals on the side of the high-side switch device 201 facing the third side 3 in the second direction, and the low-side electrical connection terminals 204 in the first switch device group 5 are arranged at intervals on the side of the low-side switch device 202 facing the third side 3 in the second direction;

[0074] The high-side electrical connection terminals 203 in the second switch device group 6 are spaced apart on the side of the high-side switch device 201 facing the fourth side 4 in the second direction, and the low-side electrical connection terminals 204 in the second switch device group 6 are spaced apart on the side of the low-side switch device 202 facing the fourth side 4 in the second direction.

[0075] With such arrangement, the layout of the high-side electrical connection terminal 203 and the low-side electrical connection terminal 204 can be neat and intuitive, and it can be convenient to electrically connect the high-side electrical connection terminal 203 to the positive conductive strip 104, and it can be convenient to electrically connect the low-side electrical connection terminal 204 to the negative conductive strip 105, and the shapes of the formed positive conductive strip 104 and the negative conductive strip 105 will not be too complicated, which can simplify the structural arrangement of the semiconductor device 100. In addition, it can also realize the rapid positioning of the high-side electrical connection terminal 203 and the low-side electrical connection terminal 204, which can facilitate the subsequent maintenance and replacement of the high-side electrical connection terminal 203 and the low-side electrical connection terminal 204.

[0076] Combination Figure 1 , Figure 3 and Figure 4As shown, a high-side electrical connection island 205 and a low-side electrical connection island 206 are arranged on the substrate 10, and the high-side electrical connection island 205 and the low-side electrical connection island 206 are electrically isolated from each other from the substrate 10, the high-side switch device 201 and the high-side electrical connection terminal 203 are both arranged on the high-side electrical connection island 205 and electrically connected to the high-side electrical connection island 205, one side of the high-side switch device 201 in the third direction is electrically connected to the high-side electrical connection island 205, and the other side of the high-side switch device 201 in the third direction is electrically connected to the substrate 10, the high-side electrical connection terminal 203 in the first switch device group 5 is arranged on a side of the high-side electrical connection island 205 that is closer to the first side 1 of the substrate 10 in the first direction, and the high-side electrical connection terminal 203 in the second switch device group 6 is arranged on a side of the high-side electrical connection island 205 that is closer to the second side 2 of the substrate 10 in the first direction.

[0077] With such a configuration, not only can the high-side switch device 201 be electrically connected to the circuit on the substrate 10, but the high-side electrical connection base island 205 can also provide an electrical connection between the high-side switch device 201 and the high-side electrical connection terminal 203, thereby ensuring the normal operation of multiple high-side switch devices 201 and ensuring the normal function of the semiconductor device 100 circuit and its normal operation.

[0078] The low-side electrical connection base islands 206 in the first switching device group 5 are arranged at intervals on the side of the low-side switching device 202 in the second direction toward the third side 3, the low-side electrical connection base islands 206 in the second switching device group 6 are arranged at intervals on the side of the low-side switching device 202 in the second direction toward the fourth side 4, the low-side electrical connection terminals 204 are arranged on the low-side electrical connection base islands 206 and are electrically connected to the low-side electrical connection base islands 206, one side of the low-side switching device 202 in the third direction is electrically connected to the substrate 10, and the other side of the low-side switching device 202 in the third direction is electrically connected to the low-side electrical connection base islands 206, the low-side electrical connection terminals 204 in the first switching device group 5 are arranged on the side of the low-side electrical connection base islands 206 that is closer to the second side 2 of the substrate 10 in the first direction, and the low-side electrical connection terminals 204 in the second switching device group 6 are arranged on the side of the low-side electrical connection base islands 206 that is closer to the first side 1 of the substrate 10 in the first direction.

[0079] With such a configuration, not only can the low-side switching device 202 be electrically connected to the circuit on the substrate 10, but the low-side electrical connection base island 206 can also provide an electrical connection between the low-side switching device 202 and the low-side electrical connection terminal 204, thereby ensuring the normal operation of multiple low-side switching devices 202 and the normal function and normal operation of the semiconductor device 100 circuit.

[0080] Furthermore, the high-side electrical connection base island 205 and the low-side electrical connection base island 206 are electrically isolated from each other between the substrate 10, which can prevent the high-side electrical connection base island 205 and the low-side electrical connection base island 206 from affecting the circuit on the substrate 10, thereby ensuring the normal function of the circuit on the substrate 10.

[0081] Combination Figure 1 , Figure 3 and Figure 4 As shown, the positive conductive tape 104 is provided with a plurality of positive electrical connection posts (not shown in the figure), and the plurality of positive electrical connection posts are extended in the third direction and are in contact and electrically connected with the plurality of high-side electrical connection terminals 203. Specifically, the positive conductive tape 104 and the high-side electrical connection terminals 203 are arranged at intervals in the third direction, and the electrical connection between the positive conductive tape 104 and the high-side electrical connection terminals 203 can be achieved through the plurality of positive electrical connection posts, and a current path can be established between the plurality of high-side switching devices 201 and the positive conductive tape 104, so that the normal operation of the circuit of the semiconductor device 100 can be ensured, and the rationality and reliability of the structural arrangement of the semiconductor device 100 can be ensured.

[0082] The negative conductive belt 105 is provided with a plurality of negative electrical connection posts (not shown in the figure), and the plurality of negative electrical connection posts are extended in the third direction and are in contact and electrically connected with the plurality of low-side electrical connection terminals 204. Specifically, the negative conductive belt 105 and the low-side electrical connection terminals 204 are arranged at intervals in the third direction, and the electrical connection between the negative conductive belt 105 and the low-side electrical connection terminals 204 can be achieved through the plurality of negative electrical connection posts, and a current path can be established between the plurality of low-side switching devices 202 and the negative conductive belt 105, so that the normal operation of the circuit of the semiconductor device 100 can be ensured, and the rationality and reliability of the structural arrangement of the semiconductor device 100 can be ensured.

[0083] Combination Figure 1 , Figure 3 and Figure 4 As shown, the projection of the positive conductive tape 104 in the third direction coincides with the projection of the low-side electrical connection terminal 204 in the third direction, the negative conductive tape 105 is spaced apart on the side of the positive conductive tape 104 away from the switching device in the third direction, an avoidance hole is provided on the positive conductive tape 104, the negative electrical connection column is penetrated by the avoidance hole and is in contact with and electrically connected to the low-side electrical connection terminal 204; and / or the negative electrical connection column is provided with a bending portion, the bending portion avoids the positive conductive tape 104, so that the negative electrical connection column is in contact with and electrically connected to the low-side electrical connection terminal 204.

[0084] Specifically, the positive conductive tape 104 is arranged between the low-side electrical connection terminal 204 and the negative conductive tape 105 in the third direction, and the low-side electrical connection terminal 204 should be electrically connected to the negative conductive tape 105 through the negative electrical connection column. Therefore, the positive conductive tape 104 should be provided with an avoidance hole and / or the negative electrical connection column should be provided with a bending portion to achieve electrical isolation between the negative electrical connection column and the positive conductive tape 104, so as to prevent the positive conductive tape 104 and the negative conductive tape 105 from accidentally contacting each other and affecting the circuit function. Such an arrangement can ensure the normal operation of the semiconductor device 100 and improve the stability and reliability of the semiconductor device 100.

[0085] In some embodiments of the present invention, the avoidance hole on the positive conductive strip 104 and / or the bent portion on the negative electrical connection column needs to be provided with a layer of insulating material on the side close to the positive conductive strip 104, and the avoidance hole on the positive conductive strip 104 can also be directly made of insulating material.

[0086] Combination Figure 1 , Figure 3 and Figure 4 As shown, the projection of the negative conductive tape 105 in the third direction coincides with the projection of the high-side electrical connection terminal 203 in the third direction, the positive conductive tape 104 is spaced apart on the side of the negative conductive tape 105 away from the switching device in the third direction, an avoidance hole is provided on the negative conductive tape 105, the positive electrical connection column is penetrated by the avoidance hole and is in contact with and electrically connected to the high-side electrical connection terminal 203; and / or the positive electrical connection column is provided with a bending portion, the bending portion avoids the negative conductive tape 105, so that the positive electrical connection column is in contact with and electrically connected to the high-side electrical connection terminal 203.

[0087] Specifically, the negative conductive tape 105 is arranged between the high-side electrical connection terminal 203 and the positive conductive tape 104 in the third direction, and the high-side electrical connection terminal 203 should be electrically connected to the positive conductive tape 104 through the positive electrical connection column. Therefore, the negative conductive tape 105 should be provided with an avoidance hole and / or the positive electrical connection column should be provided with a bending portion to achieve electrical isolation between the positive electrical connection column and the negative conductive tape 105, so as to prevent the negative conductive tape 105 from accidentally contacting the positive conductive tape 104 and affecting the circuit function. Such an arrangement can ensure the normal operation of the semiconductor device 100 and improve the stability and reliability of the semiconductor device 100.

[0088] In some embodiments of the present invention, the avoidance hole on the negative conductive strip 105 and / or the bent portion on the positive electrical connection column needs to be provided with a layer of insulating material on the side close to the negative conductive strip 105, and the avoidance hole on the negative conductive strip 105 can also be directly made of insulating material.

[0089] Combination Figure 2 , Figure 5 and Figure 6As shown, a high-side electrical connection base island 205 and a low-side electrical connection base island 206 are arranged on the substrate 10, and the high-side electrical connection base island 205 and the low-side electrical connection base island 206 are electrically isolated from each other from the substrate 10, the high-side switch device 201 and the high-side electrical connection terminal 203 are both arranged on the high-side electrical connection base island 205 and electrically connected to the high-side electrical connection base island 205, one side of the high-side switch device 201 in the third direction is electrically connected to the high-side electrical connection base island 205, and the other side of the high-side switch device 201 in the third direction is electrically connected to the substrate 10, the high-side electrical connection terminal 203 in the first switch device group 5 is arranged on a side of the high-side electrical connection base island 205 that is closer to the first side 1 of the substrate 10 in the first direction, and the high-side electrical connection terminal 203 in the second switch device group 6 is arranged on a side of the high-side electrical connection base island 205 that is closer to the first side 1 of the substrate 10 in the first direction;

[0090] With such a configuration, not only can the high-side switch device 201 be electrically connected to the circuit on the substrate 10, but the high-side electrical connection base island 205 can also provide an electrical connection between the high-side switch device 201 and the high-side electrical connection terminal 203, thereby ensuring the normal operation of multiple high-side switch devices 201 and ensuring the normal function of the semiconductor device 100 circuit and its normal operation.

[0091] The low-side electrical connection base island 206 in the first switching device group 5 is arranged at intervals on the side of the low-side switching device 202 in the second direction toward the third side 3, the low-side electrical connection base island 206 in the second switching device group 6 is arranged at intervals on the side of the low-side switching device 202 in the second direction toward the fourth side 4, the low-side electrical connection terminal 204 is arranged on the low-side electrical connection base island 206 and is electrically connected to the low-side electrical connection base island 206, one side of the low-side switching device 202 in the third direction is electrically connected to the substrate 10, and the other side of the low-side switching device 202 in the third direction is electrically connected to the low-side electrical connection base island 206, the low-side electrical connection terminal 204 in the first switching device group 5 is arranged on the side of the low-side electrical connection base island 206 that is closer to the second side 2 of the substrate 10 in the first direction, and the low-side electrical connection terminal 204 in the second switching device group 6 is arranged on the side of the low-side electrical connection base island 206 that is closer to the second side 2 of the substrate 10 in the first direction.

[0092] With such a configuration, not only can the low-side switching device 202 be electrically connected to the circuit on the substrate 10, but the low-side electrical connection base island 206 can also provide an electrical connection between the low-side switching device 202 and the low-side electrical connection terminal 204, thereby ensuring the normal operation of multiple low-side switching devices 202 and the normal function and normal operation of the semiconductor device 100 circuit.

[0093] Furthermore, the high-side electrical connection base island 205 and the low-side electrical connection base island 206 are electrically isolated from each other between the substrate 10, which can prevent the high-side electrical connection base island 205 and the low-side electrical connection base island 206 from affecting the circuit on the substrate 10, thereby ensuring the normal function of the circuit on the substrate 10.

[0094] Combination Figure 2 , Figure 5 and Figure 6 As shown, the positive conductive tape 104 is provided with a plurality of positive electrical connection posts, and the plurality of positive electrical connection posts are extended in the third direction and are in contact and electrically connected with a plurality of high-side electrical connection terminals 203. Specifically, the positive conductive tape 104 and the high-side electrical connection terminals 203 are arranged at intervals in the third direction, and the electrical connection between the positive conductive tape 104 and the high-side electrical connection terminals 203 can be achieved through the plurality of positive electrical connection posts, and a current path can be established between the plurality of high-side switch devices 201 and the positive conductive tape 104, so that the normal operation of the circuit of the semiconductor device 100 can be ensured, and the rationality and reliability of the structural arrangement of the semiconductor device 100 can be ensured.

[0095] The negative conductive belt 105 is provided with a plurality of negative electrical connection posts, and the plurality of negative electrical connection posts are extended in the third direction and are in contact and electrically connected with the plurality of low-side electrical connection terminals 204. Specifically, the negative conductive belt 105 and the low-side electrical connection terminals 204 are spaced apart in the third direction, and the electrical connection between the negative conductive belt 105 and the low-side electrical connection terminals 204 can be achieved through the plurality of negative electrical connection posts, and a current path can be established between the plurality of low-side switching devices 202 and the negative conductive belt 105, so that the normal operation of the circuit of the semiconductor device 100 can be ensured, and the rationality and reliability of the structural arrangement of the semiconductor device 100 can be ensured.

[0096] Combination Figure 2 , Figure 5 and Figure 6 As shown, the projection of the positive conductive tape 104 in the third direction and the projection of the low-side electrical connection terminal 204 in the third direction are spaced apart from each other, the negative electrical connection column extends in the third direction and is spaced apart from the positive conductive tape 104 , and the negative electrical connection column is in contact with and electrically connected to the low-side electrical connection terminal 204 .

[0097] Specifically, the projection of the positive conductive tape 104 in the third direction and the projection of the low-side electrical connection terminal 204 in the third direction are spaced apart from each other, the negative electrical connection column extends in the third direction and is spaced apart from the positive conductive tape 104, and the positive conductive tape 104 is arranged between the switching device and the negative conductive tape 105 in the third direction. In this way, while the positive conductive tape 104 and the high-side electrical connection terminal 203 can be electrically connected through the positive electrical connection column, the negative conductive tape 105 and the low-side electrical connection terminal 204 can also be electrically connected through the negative electrical connection column. In addition, the electrical connection between the negative electrical connection column and the positive conductive tape 104 can be avoided, and accidental contact between the positive conductive tape 104 and the negative conductive tape 105 can be prevented to affect the circuit function, thereby ensuring the normal operation of the semiconductor device 100 and improving the stability and reliability of the semiconductor device 100.

[0098] In some embodiments of the present invention, a layer of insulating material may be provided outside the negative electrical connection column to prevent the negative electrical connection column from being electrically connected to the positive conductive strip 104 due to accidental tilt, thereby causing a short circuit between the positive conductive strip 104 and the negative conductive strip 105 .

[0099] Combination Figure 1 and Figure 2 As shown, the semiconductor device 100 further includes a first electrical connection line 207 and a second electrical connection line 208, wherein the first electrical connection line 207 is extended in the second direction, and a first end of the first electrical connection line 207 in the second direction is electrically connected to the high-side switch device 201, and a second end of the first electrical connection line 207 in the second direction is electrically connected to the spacing area between the first switch device group 5 and the second switch device group 6 corresponding to the substrate 10. In this way, a current path can be established between the high-side switch device 201 and the spacing area, and the high-side switch device 201 can be electrically connected to the circuit of the spacing area, thereby ensuring the integrity of the circuit of the semiconductor device 100 and ensuring the normal operation of the semiconductor device 100.

[0100] The second electrical connection line 208 is extended in the second direction and electrically connected between the low-side switch device 202 and the low-side electrical connection base island 206. In this way, a current path can be established between the low-side switch device 202 and the low-side electrical connection base island 206, and an electrical connection between the low-side switch device 202 and the low-side electrical connection base island 206 can be achieved, thereby ensuring the integrity of the circuit of the semiconductor device 100 and ensuring the normal operation of the semiconductor device 100.

[0101] Combination Figure 3 , Figure 4 , Figure 5 and Figure 6As shown, the positive conductive band 104 includes a positive conductive first band segment 1041 and a positive conductive band segment group 1042, the positive conductive band segment group 1042 includes a positive conductive second band segment 1043, a positive conductive third band segment 1044 and a first positive connection band segment 1045, the positive conductive first band segment 1041 is extended in the first direction, one end of the positive conductive first band segment 1041 in the first direction is electrically connected to the positive potential external terminal 101, the other end of the positive conductive first band segment 1041 in the first direction is connected to the positive conductive second band segment 1043, the positive conductive first band segment 1041 is at least partially electrically connected to the high-side electrical connection terminal 203 adjacent to the first side 1 in the first switching device group 5, and the positive conductive third band segment 1044 is electrically connected to the positive potential external terminal 101. The second band segment 1043 is extended in the second direction, and one end of the positive conductive second band segment 1043 adjacent to the fourth side 4 in the second direction is electrically connected to the high-side electrical connection terminal 203 in the second switching device group 6. The positive conductive third band segment 1044 is extended in the second direction, and one end of the positive conductive third band segment 1044 adjacent to the third side 3 in the second direction is electrically connected to the high-side electrical connection terminal 203 in the first switching device group 5. The first positive connection band segment 1045 is extended in the first direction and connected between one end of the positive conductive second band segment 1043 adjacent to the fourth side 4 and one end of the positive conductive third band segment 1044 adjacent to the fourth side 4. There is at least one positive conductive band segment group 1042. With such arrangement, the shape design of the positive conductive tape 104 can be made to correspond to the position layout of the high-side electrical connection terminal 203, and the projection of the positive conductive tape 104 in the third direction can be made to coincide with the projection of the high-side electrical connection terminal 203 in the third direction, thereby ensuring that the high-side electrical connection terminal 203 can be electrically connected to the positive conductive tape 104 through the positive electrical connection column, thereby not only ensuring the rationality and reliability of the structural design of the semiconductor device 100, but also improving the working performance of the semiconductor device 100.

[0102] Further, when there are multiple positive conductive band segment groups 1042, two adjacent positive conductive band segment groups 1042 are set to be the first positive conductive band segment group 1042 and the second positive conductive band segment group 1042, respectively. A second positive connection band segment 1046 is connected between one end of the positive conductive third band segment 1044 in the first positive conductive band segment group 1042 adjacent to the third side 3 and one end of the positive conductive second band segment 1043 in the second positive conductive band segment group 1042 adjacent to the third side 3, and the second positive connection band segment 1046 is extended in the first direction. Such a configuration can facilitate the addition of the high-side switch device 201 and the subsequent functional improvement of the semiconductor device 100.

[0103] Combination Figure 3 , Figure 4 , Figure 5 and Figure 6As shown, the negative conductive band 105 includes a negative conductive first band segment 1051 and a negative conductive band segment group 1052, the negative conductive band segment group 1052 includes a negative conductive second band segment 1053, a negative conductive third band segment 1054 and a first negative connection band segment 1055, the negative conductive first band segment 1051 is extended in the first direction and is spaced apart from the positive conductive first band segment 1041 in the second direction, one end of the negative conductive first band segment 1051 in the first direction is electrically connected to the negative potential external terminal 102 adjacent to the first side 1 in the second switch device group 6, the other end of the negative conductive first band segment 1051 in the first direction is connected to the negative conductive second band segment 1053, the negative conductive first band segment 1051 is at least partially electrically connected to the low-side electrical connection terminal 204, and the negative conductive second band segment 1054 is electrically connected to the low-side electrical connection terminal 204. 53 is extended in the second direction, one end of the negative conductive second band segment 1053 adjacent to the third side 3 in the second direction is electrically connected to the low-side electrical connection terminal 204 in the first switch device group 5, the negative conductive third band segment 1054 is extended in the second direction, one end of the negative conductive third band segment 1054 adjacent to the fourth side 4 in the second direction is electrically connected to the low-side electrical connection terminal 204 in the second switch device group 6, the negative conductive second band segment 1053 and the negative conductive third band segment 1054 are spaced apart in the first direction, the first negative connection band segment 1055 is extended in the first direction and connected between one end of the negative conductive second band segment 1053 adjacent to the third side 3 and one end of the negative conductive third band segment 1054 adjacent to the third side 3, and there is at least one negative conductive band segment group 1052. With such arrangement, the shape design of the negative conductive tape 105 can be made to correspond to the position layout of the low-side electrical connection terminal 204, and the projection of the negative conductive tape 105 in the third direction can be made to coincide with the projection of the low-side electrical connection terminal 204 in the third direction, thereby ensuring that the low-side electrical connection terminal 204 can be electrically connected to the negative conductive tape 105 through the negative electrical connection column, thereby not only ensuring the rationality and reliability of the structural design of the semiconductor device 100, but also improving the working performance of the semiconductor device 100.

[0104] When there are multiple negative conductive band segment groups 1052, two adjacent negative conductive band segment groups 1052 are respectively set to be the first negative conductive band segment group 1052 and the second negative conductive band segment group 1052, and a second negative connection band segment 1056 is connected between an end of the negative conductive third band segment 1054 in the first negative conductive band segment group 1052 adjacent to the fourth side 4 and an end of the negative conductive second band segment 1053 in the second negative conductive band segment group 1052 adjacent to the fourth side 4, and the second negative connection band segment 1056 is extended in the first direction. Such a configuration can facilitate the addition of the low-side switch device 202 and the subsequent functional improvement of the semiconductor device 100.

[0105] In some embodiments of the present invention, the current directions of two adjacent conductive band segments in the second direction of the positive conductive band 104 and the negative conductive band 105 are opposite, for example, the current directions of the positive conductive second band segment 1043 and the positive conductive third band segment 1044, which can effectively reduce the circuit inductance and improve the working performance of the semiconductor device.

[0106] In some embodiments of the present invention, the widths of the positive conductive strip 104 and the negative conductive strip 105 should be set according to the overall layout.

[0107] The semiconductor device 100 according to the present invention can be applied to a power semiconductor half-bridge module. Specifically, since the semiconductor device 100 structure has better heat dissipation performance and can reduce circuit inductance, the semiconductor device 100 can be applied to a power semiconductor half-bridge module, which can not only ensure the heat dissipation effect of the power semiconductor half-bridge module, but also reduce the circuit inductance of the power semiconductor half-bridge module, thereby improving the stability and reliability of the power semiconductor half-bridge module and extending the service life of the power semiconductor half-bridge module.

[0108] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0109] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0110] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A semiconductor device, characterized in that: include: case; A substrate (10), the substrate (10) being arranged in the housing, with two sides of the substrate (10) in a first direction being respectively a first side (1) and a second side (2), and two sides of the substrate (10) in a second direction being respectively a third side (3) and a fourth side (4); A switch device, the switch device being arranged on the substrate (10) and comprising a plurality of high-side switch devices (201) and a plurality of low-side switch devices (202), wherein the high-side switch devices (201) and the low-side switch devices (202) are both single chips; The plurality of high-side switch devices (201) and the plurality of low-side switch devices (202) together form a first switch device group (5) and a second switch device group (6); the first switch device group (5) is arranged adjacent to the third side (3); the second switch device group (6) is arranged adjacent to the fourth side (4) and is spaced apart from the first switch device group (5) in a second direction; the first switch device group (5) comprises a plurality of high-side switch devices (201) and a plurality of low-side switch devices (202) spaced apart from each other in a first direction; any two adjacent switch devices in the first switch device group (5) are respectively the high-side switch device (201) and the low-side switch device (202); The second switch device group (6) comprises a plurality of high-side switch devices (201) and a plurality of low-side switch devices (202) spaced apart from each other in a first direction, any two adjacent switch devices in the second switch device group (6) are respectively the high-side switch device (201) and the low-side switch device (202), the high-side switch device (201) in the first switch device group (5) and the low-side switch device (202) in the second switch device group (6) correspond to each other in the second direction, and the low-side switch device (202) in the first switch device group (5) and the high-side switch device (201) in the second switch device group (6) correspond to each other in the second direction.

2. The semiconductor device according to claim 1, wherein: The projections of the high-side switch device (201) in the first switch device group (5) and the low-side switch device (202) in the second switch device group (6) in the second direction overlap with each other; and / or Projections of the low-side switch device (202) in the first switch device group (5) and the high-side switch device (201) in the second switch device group (6) in the second direction overlap with each other.

3. The semiconductor device according to claim 2, wherein: The first side (1) of the substrate (10) is provided with a positive potential external terminal (101) and a negative potential external terminal (102), and the second side (2) of the substrate (10) is provided with a load terminal (103).

4. The semiconductor device according to claim 3, wherein: A plurality of the high-side switch devices (201) are selectively and simultaneously electrically connected to the positive potential external terminal (101); or A plurality of the low-side switch devices (202) are selectively and simultaneously electrically connected to the negative potential external terminal (102).

5. The semiconductor device according to claim 4, wherein: It also includes a positive conductive belt (104) and a negative conductive belt (105), wherein the positive conductive belt (104) is arranged at intervals on a side of the switch device in a third direction away from the substrate (10), one end of the positive conductive belt (104) is electrically connected to the positive potential external terminal (101), and the positive conductive belt (104) is electrically connected to the plurality of high-side switch devices (201); The negative conductive tape (105) is arranged at intervals on a side of the switching device in the third direction away from the substrate (10) and is arranged at intervals with the positive conductive tape (104) in the third direction, one end of the negative conductive tape (105) is electrically connected to the negative potential external terminal (102), and the negative conductive tape (105) is electrically connected to the plurality of low-side switching devices (202), wherein the first direction, the second direction and the third direction are arranged perpendicular to each other.

6. The semiconductor device (100) according to claim 5, characterized in that The positive conductive strip (104) and the positive potential external terminal (101) are integrally formed structural components; and / or the negative conductive strip (105) and the negative potential external terminal (102) are integrally formed structural components.

7. The semiconductor device (100) according to claim 5, characterized in that The positive conductive strip (104) and the positive potential external terminal (101) are separate structural components and are in contact with each other; and / or the negative conductive strip (105) and the negative potential external terminal (102) are separate structural components and are in contact with each other.

8. The semiconductor device according to claim 5, wherein: The substrate (10) is also provided with a plurality of high-side electrical connection terminals (203) and a plurality of low-side electrical connection terminals (204); the plurality of high-side electrical connection terminals (203) are electrically connected to the plurality of high-side switch devices (201) in a one-to-one correspondence; the plurality of high-side electrical connection terminals (203) are electrically connected to the positive conductive strip (104); the plurality of low-side electrical connection terminals (204) are electrically connected to the plurality of low-side switch devices (202) in a one-to-one correspondence; and the plurality of low-side electrical connection terminals (204) are electrically connected to the negative conductive strip (105).

9. The semiconductor device according to claim 8, wherein: The high-side electrical connection terminals (203) in the first switch device group (5) are arranged at intervals on a side of the high-side switch device (201) facing the third side (3) in the second direction, and the low-side electrical connection terminals (204) in the first switch device group (5) are arranged at intervals on a side of the low-side switch device (202) facing the third side (3) in the second direction; The high-side electrical connection terminals (203) in the second switch device group (6) are arranged at intervals on a side of the high-side switch device (201) that faces the fourth side (4) in the second direction, and the low-side electrical connection terminals (204) in the second switch device group (6) are arranged at intervals on a side of the low-side switch device (202) that faces the fourth side (4) in the second direction.

10. The semiconductor device according to claim 9, wherein: The substrate (10) is provided with the high-side electrical connection base island (205) and the low-side electrical connection base island (206); the high-side electrical connection base island (205) and the low-side electrical connection base island (206) are electrically isolated from each other and the substrate (10); the high-side switch device (201) and the high-side electrical connection terminal (203) are both provided on the high-side electrical connection base island (205) and are electrically connected to the high-side electrical connection base island (205); one side of the high-side switch device (201) in the third direction is connected to the high-side electrical connection base island (206); The high-side electrical connection terminal (203) in the first switching device group (5) is arranged on a side of the high-side electrical connection base island (205) that is closer to the first side (1) of the substrate (10) in the first direction, and the high-side electrical connection terminal (203) in the second switching device group (6) is arranged on a side of the high-side electrical connection base island (205) that is closer to the second side (2) of the substrate (10) in the first direction; The low-side electrical connection base islands (206) in the first switching device group (5) are arranged at intervals on the side of the low-side switching device (202) in the second direction facing the third side, the low-side electrical connection base islands (206) in the second switching device group (6) are arranged at intervals on the side of the low-side switching device (202) in the second direction facing the fourth side (4), the low-side electrical connection terminals (204) are arranged on the low-side electrical connection base islands (206) and are electrically connected to the low-side electrical connection base islands (206), and the side of the low-side switching device (202) in the third direction is connected to the The low-side switching device (202) is electrically connected to the substrate (10), the other side of the low-side switching device (202) in the third direction is electrically connected to the low-side electrical connection base island (206), the low-side electrical connection terminal (204) in the first switching device group (5) is arranged on a side of the low-side electrical connection base island (206) that is closer to the second side (2) of the substrate (10) in the first direction, and the low-side electrical connection terminal (204) in the second switching device group (6) is arranged on a side of the low-side electrical connection base island (206) that is closer to the first side (1) of the substrate (10) in the first direction.

11. The semiconductor device according to claim 10, wherein: The positive conductive strip (104) is provided with a plurality of positive electrical connection posts, the plurality of positive electrical connection posts are extended in the third direction and are in contact and electrically connected with the plurality of high-side electrical connection terminals (203); The negative conductive belt (105) is provided with a plurality of negative electrical connection posts, and the plurality of negative electrical connection posts are extended in the third direction and are in contact and electrically connected with the plurality of low-side electrical connection terminals (204).

12. The semiconductor device according to claim 11, wherein: The projection of the positive conductive belt (104) in the third direction overlaps with the projection of the low-side electrical connection terminal (204) in the third direction, the negative conductive belt (105) is arranged at intervals on the side of the positive conductive belt (104) in the third direction away from the switch device, the positive conductive belt (104) is provided with an escape hole, the negative electrical connection column passes through the escape hole and is in contact and electrically connected with the low-side electrical connection terminal (204); and / or The negative electrical connection column is provided with a bent portion, and the bent portion avoids the positive conductive tape (104) so ​​that the negative electrical connection column is in contact with and electrically connected to the low-side electrical connection terminal (204).

13. The semiconductor device according to claim 11, wherein: The projection of the negative conductive belt (105) in the third direction coincides with the projection of the high-side electrical connection terminal (203) in the third direction, the positive conductive belt (104) is arranged at intervals on the side of the negative conductive belt (105) in the third direction away from the switch device, the negative conductive belt (105) is provided with an avoidance hole, the positive electrical connection column passes through the avoidance hole and is in contact and electrically connected with the high-side electrical connection terminal (203); and / or The positive electrical connection column is provided with a bending portion, and the bending portion avoids the negative conductive strip, so that the positive electrical connection column is in contact with and electrically connected to the high-side electrical connection terminal (203).

14. The semiconductor device according to claim 9, wherein: The substrate (10) is provided with the high-side electrical connection base island (205) and the low-side electrical connection base island (206); the high-side electrical connection base island (205) and the low-side electrical connection base island (206) are electrically isolated from each other and the substrate (10); the high-side switch device (201) and the high-side electrical connection terminal (203) are both provided on the high-side electrical connection base island (205) and are electrically connected to the high-side electrical connection base island (205); one side of the high-side switch device (201) in the third direction is connected to the high-side electrical connection base island (206); The high-side electrical connection terminal (203) in the first switching device group (5) is arranged on a side of the high-side electrical connection base island (205) that is closer to the first side (1) of the substrate (10) in the first direction, and the high-side electrical connection terminal (203) in the second switching device group (6) is arranged on a side of the high-side electrical connection base island (205) that is closer to the first side (1) of the substrate (10) in the first direction; The low-side electrical connection base islands (206) in the first switching device group are arranged at intervals on the side of the low-side switching device (202) in the second direction facing the third side, the low-side electrical connection base islands (206) in the second switching device group are arranged at intervals on the side of the low-side switching device (202) in the second direction facing the fourth side (4), the low-side electrical connection terminals (204) are arranged on the low-side electrical connection base islands (206) and are electrically connected to the low-side electrical connection base islands (206), and the side of the low-side switching device (202) in the third direction is connected to the substrate (10) is electrically connected, the other side of the low-side switching device (202) in the third direction is electrically connected to the low-side electrical connection base island (206), the low-side electrical connection terminal (204) in the first switching device group (5) is arranged on a side of the low-side electrical connection base island (206) that is closer to the second side (2) of the substrate (10) in the first direction, and the low-side electrical connection terminal (204) in the second switching device group (6) is arranged on a side of the low-side electrical connection base island (206) that is closer to the second side (2) of the substrate (10) in the first direction.

15. The semiconductor device according to claim 14, wherein: The positive conductive strip (104) is provided with a plurality of positive electrical connection posts, the plurality of positive electrical connection posts are extended in the third direction and are in contact and electrically connected with the plurality of high-side electrical connection terminals (203); The negative conductive belt (105) is provided with a plurality of negative electrical connection posts, and the plurality of negative electrical connection posts are extended in the third direction and are in contact and electrically connected with the plurality of low-side electrical connection terminals (204).

16. The semiconductor device according to claim 15, wherein: The projection of the positive conductive tape (104) in the third direction and the projection of the low-side electrical connection terminal (204) in the third direction are spaced apart from each other, the negative electrical connection column extends in the third direction and is spaced apart from the positive conductive tape (104), and the negative electrical connection column is in contact and electrically connected with the low-side electrical connection terminal (204).

17. The semiconductor device according to claim 18, wherein: It also includes a first electrical connection line (207) and a second electrical connection line (208), wherein the first electrical connection line (207) is extended in the second direction, a first end of the first electrical connection line in the second direction is electrically connected to the high-side switch device (201), and a second end of the first electrical connection line (207) in the second direction is electrically connected to a spacing area of ​​the substrate (10) corresponding to the first switch device group (5) and the second switch device group (6); The second electrical connection line (208) is extended in a second direction and electrically connected between the low-side switch device (202) and the low-side electrical connection base island (206).

18. The semiconductor device according to claim 10 or 14, characterized in that: The positive conductive band (104) comprises a positive conductive first band segment (1041) and a positive conductive band segment group (1042), the positive conductive band segment group (1042) comprises a positive conductive second band segment (1043), a positive conductive third band segment (1044) and a first positive connection band segment (1045), the positive conductive first band segment (1041) is extended in a first direction, one end of the positive conductive first band segment (1041) in the first direction is electrically connected to the positive potential external terminal (101), the other end of the positive conductive first band segment (1041) in the first direction is connected to the positive conductive second band segment (1043), the positive conductive first band segment (1041) is at least partially electrically connected to the high-side electrical connection terminal (203) adjacent to the first side (1) in the first switching device group (5), and the positive conductive second band segment (1045) is electrically connected to the positive potential external terminal (101). 1043) is extended in the second direction, one end of the positive conductive second band segment (1043) adjacent to the fourth side (4) in the second direction is electrically connected to the high-side electrical connection terminal (203) in the second switch device group (6), the positive conductive third band segment (1044) is extended in the second direction, one end of the positive conductive third band segment (1044) adjacent to the third side (3) in the second direction is electrically connected to the high-side electrical connection terminal (203) in the first switch device group (5), the first positive connection band segment (1045) is extended in the first direction and connected between one end of the positive conductive second band segment (1043) adjacent to the fourth side (4) and one end of the positive conductive third band segment (1044) adjacent to the fourth side (4), and the positive conductive band segment group (1042) is at least one; When there are multiple positive conductive band segment groups (1042), two adjacent positive conductive band segment groups (1042) are respectively set to be a first positive conductive band segment group (1042) and a second positive conductive band segment group (1042), and a second positive connecting band segment (1046) is connected between an end of the positive conductive third band segment (1044) in the first positive conductive band segment group (1042) adjacent to the third side (3) and an end of the positive conductive second band segment (1043) in the second positive conductive band segment group (1042) adjacent to the third side (3), and the second positive connecting band segment (1046) is extended in the first direction.

19. The semiconductor device according to claim 20, wherein: The negative conductive band (105) comprises a negative conductive first band segment (1051) and a negative conductive band segment group (1052), the negative conductive band segment group (1052) comprises a negative conductive second band segment (1053), a negative conductive third band segment (1054) and a first negative connection band segment (1055), the negative conductive first band segment (1051) is extended in a first direction and is spaced apart from the positive conductive first band segment (1041) in a second direction, one end of the negative conductive first band segment (1051) in the first direction is electrically connected to the negative potential external terminal (102) in the second switch device group (6) adjacent to the first side (1), the other end of the negative conductive first band segment (1051) in the first direction is connected to the negative conductive second band segment (1053), the negative conductive first band segment (1051) is at least partially electrically connected to the low-side electrical connection terminal (204), and the negative conductive second band segment (1053) is electrically connected to the second side electrical connection terminal (204). The negative conductive second band segment (1053) is extended in the second direction, one end of the negative conductive third band segment (1053) adjacent to the third side (3) in the second direction is electrically connected to the low-side electrical connection terminal (204) in the first switch device group (5), the negative conductive third band segment (1054) is extended in the second direction, one end of the negative conductive third band segment (1054) adjacent to the fourth side (4) in the second direction is electrically connected to the low-side electrical connection terminal (204) in the second switch device group (6), the negative conductive second band segment (1053) and the negative conductive third band segment (1054) are spaced apart in the first direction, the first negative connection band segment (1055) is extended in the first direction and connected between one end of the negative conductive second band segment (1053) adjacent to the third side (3) and one end of the negative conductive third band segment (1054) adjacent to the third side (3), and the negative conductive band segment group (1052) is at least one; When there are multiple negative conductive band segment groups (1052), two adjacent negative conductive band segment groups (1052) are respectively set to be a first negative conductive band segment group (1052) and a second negative conductive band segment group (1052), and a second negative connecting band segment (1056) is connected between an end of the negative conductive third band segment (1054) in the first negative conductive band segment group (1052) adjacent to the fourth side (4) and an end of the negative conductive second band segment (1053) in the second negative conductive band segment group (1052) adjacent to the fourth side (4), and the second negative connecting band segment (1056) is extended in the first direction.

Images