Preparation method of photodiode and rectifier diode composite device and composite device

Abstract

The invention provides a preparation method of a composite device of a photodiode and a rectifier diode and the composite device. The preparation method comprises: fixing an ITO electrode mask plate at the center of a glass substrate, and sputtering to generate an ITO electrode on the glass substrate; removing the ITO electrode mask plate, fixing a functional mask plate at the center, and sputtering to generate a ZnO layer connected to the ITO electrode in a functional area; vaporizing to generate a PbI2 layer on the surface of the ZnO layer; sputtering to generate a NiO layer on the surface of the PbI2 layer; vaporizing to generate a MAPbI3 layer on the surface of the NiO layer; vaporizing to generate a C60 / BCP layer on the surface of the MAPbI3 layer; removing the functional mask plate, fixing an Ag electrode mask plate at the center, and vaporizing to generate an Ag electrode connected to the C60 / BCP layer based on the Ag electrode mask plate, so as to obtain a composite device in which a rectifier diode and a photodiode are stacked in reverse. A photodiode array using the composite device can effectively alleviate pixel crosstalk during imaging.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device preparation, and in particular to a preparation method of a composite device of a photodiode and a rectifier diode, and the composite device. Background Art

[0002] Pixel crosstalk is a common problem in the photoelectric imaging process, and the harm it brings is that the accuracy of imaging is greatly reduced. The main reason for pixel crosstalk is that under lighting conditions, the rectification performance of the photodiode array is significantly reduced, the selected pixel cannot close the flow path of the photogenerated carriers in time, and the unselected pixel shares part of the photocurrent of the selected pixel. An effective way to solve the pixel crosstalk problem is to make a cross-array rectifier diode, stack the rectifier diode array and the photodiode array in reverse, and cut off the path of pixel crosstalk. The key to achieving this goal is the selection of the two diode materials and the matching of the band structure. If the material selection is not appropriate, the performance of the two diodes will be greatly weakened. If the band matching is not appropriate, the pixel crosstalk problem in the photodiode imaging process will not be solved. How to select suitable materials to prepare the two diodes and how to achieve band structure matching is extremely challenging.

[0003] Therefore, it is necessary to provide a technical solution for preparing a composite device that combines a photodiode and a rectifier diode, and when the prepared composite device is applied to a photodiode array, it can effectively alleviate the pixel crosstalk phenomenon during the imaging process. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a method for preparing a composite device of a photodiode and a rectifier diode, comprising the following specific steps:

[0005] Fixing an ITO electrode mask at the center of a glass substrate, and sputtering an ITO electrode on the glass substrate based on the ITO electrode mask to obtain a first intermediate component;

[0006] Removing the ITO electrode mask on the first intermediate piece, fixing a functional mask at the center of the first intermediate piece, and sputtering a ZnO layer connected to the ITO electrode in a functional area of ​​the first intermediate piece based on the functional mask to obtain a second intermediate piece;

[0007] Treating the second intermediate member by evaporation to form a PbI2 layer on the surface of the ZnO layer, thereby obtaining a third intermediate member;

[0008] sputtering the third intermediate member to generate a NiO layer on the surface of the PbI2 layer, thereby obtaining a fourth intermediate member;

[0009] The fourth intermediate member is subjected to an evaporation treatment to form a MAPbI3 layer on the surface of the NiO layer, thereby obtaining a fifth intermediate member;

[0010] The fifth intermediate member is subjected to an evaporation treatment to form a C60 / BCP layer on the surface of the MAPbI3 layer, thereby obtaining a sixth intermediate member;

[0011] The functional mask on the sixth middle piece is removed, and the Ag electrode mask is fixed in the center of the sixth middle piece. Based on the Ag electrode mask, an Ag electrode connected to the C60 / BCP layer is generated by evaporation on the sixth middle piece to obtain a composite device in which a rectifier diode and a photodiode are stacked in reverse.

[0012] In a possible implementation, the window area of ​​the ITO electrode mask at least partially overlaps with the window area of ​​the functional mask, and does not overlap with the window area of ​​the Ag electrode mask at least outside the range of the window area of ​​the functional mask.

[0013] In a possible implementation, when the ITO electrode is sputtered on the glass substrate, argon is used as the working gas, the gas pressure is 0.1 MPa, the sputtering power is 100 W, and the sputtering time is 30 min.

[0014] In a possible implementation, when the ZnO layer connected to the ITO electrode is sputtered in the functional area of ​​the first intermediate piece, argon is used as the working gas, the gas pressure is 0.1 MPa, the sputtering power is 100 W, and the sputtering time is 30 min.

[0015] In a possible implementation, when the second intermediate member is subjected to an evaporation treatment, the evaporation rate is 0.1 nm / s and the evaporation time is 30 min.

[0016] In a possible implementation, when sputtering the third intermediate piece, argon is used as the working gas, the gas pressure is 0.1 MPa, the sputtering power is 100 W, and the sputtering time is 30 min.

[0017] In a possible implementation, when evaporating the fourth intermediate member, PbI2 is firstly evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 7 min, and then MAI is evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 7 min.

[0018] In a possible implementation, when the fifth intermediate member is evaporated, C60 is first evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 2 min, and then BCP is evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 5 min.

[0019] In a possible implementation, when the Ag electrode connected to the C60 / BCP layer is formed by evaporation on the sixth intermediate member, the evaporation rate is 0.1 nm / s and the evaporation time is 14 min.

[0020] The present invention also provides a composite device, which is obtained based on the above-mentioned preparation method.

[0021] The technical solution provided by the present invention has at least the following beneficial effects:

[0022] The present invention uses indium tin oxide (ITO), zinc oxide (ZnO), lead iodide (PbI2), nickel oxide (NiO), methylamine iodide (MAI), carbon 60 (C60), hole blocking material (BCP) and silver (Ag) as materials, and uses magnetron sputtering and thermal evaporation as technical means.

[0023] A composite device including a photodiode and a rectifier diode is prepared, and when the prepared composite device is applied to a photodiode array, the pixel crosstalk phenomenon of the photodiode array during the imaging process can be effectively alleviated, and the potential application prospects in the field of photoelectric imaging are broad. At the same time, the process of the present invention is simple and controllable, the preparation cycle is short, the materials are cheap, and the repeatability is strong. According to the actual production requirements, the process parameters can be flexibly adjusted, and there are also broad application prospects in the fields of electrical engineering, electronics, and information technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A flow chart of a method for preparing a photodiode and rectifier diode composite device provided by an embodiment of the present invention;

[0025] Figure 2 A structural diagram of a composite device in which a rectifier diode and a photodiode are stacked in reverse according to an embodiment of the present invention;

[0026] Figure 3 A schematic diagram of a top view of the structure after removing the ITO electrode mask from the first intermediate member provided in an embodiment of the present invention;

[0027] Figure 4 A schematic diagram of a top view of a first intermediate component with a functional mask provided in an embodiment of the present invention;

[0028] Figure 5 A schematic diagram of a top view of the structure of a second middleware provided in an embodiment of the present invention;

[0029] Figure 6 A schematic diagram of a top view of the structure of a sixth middleware provided in an embodiment of the present invention;

[0030] Figure 7A schematic diagram of a top view structure after removing a functional mask from a sixth intermediate piece provided by an embodiment of the present invention;

[0031] Figure 8 A schematic diagram of a top view structure after removing the Ag electrode mask on the composite device provided in an embodiment of the present invention;

[0032] Fig. 9 A voltage-current curve diagram obtained by testing a composite device provided in an embodiment of the present invention;

[0033] Fig.10 A current-time curve diagram obtained by testing a composite device provided in an embodiment of the present invention;

[0034] Fig.11 This is an imaging effect diagram of the composite device provided by an embodiment of the present invention;

[0035] Fig.12 An imaging effect diagram of the light response test piece provided in an embodiment of the present invention;

[0036] Fig.13 A structural diagram of a rectifier test piece provided in an embodiment of the present invention;

[0037] Fig.14 A voltage-current curve diagram obtained by testing a rectifier test piece provided in an embodiment of the present invention;

[0038] Fig.15 A structural diagram of a light response test piece provided in an embodiment of the present invention;

[0039] Fig.16 A voltage-current curve diagram obtained by testing a light response test piece provided in an embodiment of the present invention;

[0040] Fig.17 This is a current-time curve diagram obtained by testing the light response test piece provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0041] In order to deepen the understanding of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. The embodiments are only used to explain the present invention and do not limit the protection scope of the present invention.

[0042] Please refer to Figure 1 and Figure 2 The present invention provides a method for preparing a composite device of a photodiode and a rectifier diode, comprising the following specific steps:

[0043] S100: Fixing an ITO electrode mask at the center of a glass substrate, and generating an ITO electrode by sputtering on the glass substrate based on the ITO electrode mask to obtain a first intermediate component.

[0044] In this embodiment, the ITO electrode mask can be made based on PET plastic. The glass substrate adopts a conventional model. Magnetron sputtering technology can be used for sputtering. Magnetron sputtering technology is a commonly used method for depositing thin films, which has the characteristics of simple method, strong controllability and low material requirements. The first intermediate piece can be understood as a semi-finished structure after sputtering the ITO electrode on the glass substrate.

[0045] In a possible implementation, when the ITO electrode is sputtered on the glass substrate, argon is used as the working gas, the gas pressure is 0.1 MPa, the sputtering power is 100 W, and the sputtering time is 30 min.

[0046] In a specific embodiment, a square PET plastic with a thickness of 0.2 mm and a side length of 2 cm is taken, and 10 rectangular electrode windows of 2 cm×0.015 cm are carved in the center of the square PET plastic. The interval between adjacent electrode windows is 0.015 cm, that is, the final electrode interval is 0.015 cm, thereby obtaining an ITO electrode mask. The ITO electrode mask is attached to the center of a 2 cm×2 cm glass substrate with adhesive tape, and then magnetron sputtering technology is used to sputter the surface of the glass substrate with the ITO electrode mask for 30 minutes at an Ar gas pressure of 0.1 MPa (that is, argon is used as the working gas, and the gas pressure is 0.1 MPa) and a sputtering power of 100 w. The purity of the ITO target material is 99.9%. After the sputtering operation, an ITO electrode can be formed on the glass substrate, thereby obtaining the first intermediate component.

[0047] S200: removing the ITO electrode mask on the first intermediate piece, fixing a functional mask at the center of the first intermediate piece, and sputtering a ZnO layer connected to the ITO electrode in a functional area of ​​the first intermediate piece based on the functional mask to obtain a second intermediate piece.

[0048] In this embodiment, the functional mask can be made of PET plastic. Magnetron sputtering technology can be used for sputtering. The second intermediate piece can be understood as a semi-finished product structure after a ZnO layer is sputtered on the functional area of ​​the first intermediate piece.

[0049] In a possible implementation, when the ZnO layer connected to the ITO electrode is sputtered in the functional area of ​​the first intermediate piece, argon is used as the working gas, the gas pressure is 0.1 MPa, the sputtering power is 100 W, and the sputtering time is 30 min.

[0050] In a specific embodiment, the ITO electrode mask on the surface of the first intermediate member is removed, and the structure after removing the ITO electrode mask on the first intermediate member is as follows: Figure 3Take a square PET plastic with a thickness of 0.2mm and a side length of 2cm, and carve a 0.6cm×0.6cm square hole in the center of the square PET plastic as a functional area window to obtain a functional mask. Use adhesive tape to stick the carved functional mask to the center of the 2cm×2cm first intermediate piece. The area where the functional area window is located on the functional mask is used as the functional area, as shown in Figure 4 As shown. Using magnetron sputtering technology, the surface of the first intermediate member covered with a functional mask was sputtered for 30 minutes at an Ar gas pressure of 0.1 MPa (i.e., argon gas was used as the working gas, and the gas pressure was 0.1 MPa) and a sputtering power of 100w, wherein the purity of the ZnO target material was 99.9%. After the sputtering operation, a ZnO layer was formed in the functional area of ​​the first intermediate member, thereby obtaining a second intermediate member, as shown in FIG. Figure 5 shown.

[0051] S300: performing a vapor deposition process on the second intermediate member to generate a PbI2 layer on the surface of the ZnO layer, thereby obtaining a third intermediate member.

[0052] In this embodiment, thermal evaporation technology can be used for evaporation, which is a commonly used method for depositing thin films, and has the characteristics of simple method, strong controllability and low material requirements. The third middle piece can be understood as a semi-finished structure after the ZnO layer is evaporated on the functional area of ​​the second middle piece.

[0053] In a possible implementation, when the second intermediate member is subjected to an evaporation treatment, the evaporation rate is 0.1 nm / s and the evaporation time is 30 min.

[0054] In a specific embodiment, the second intermediate member is placed in a thermal evaporation chamber, and PbI2 with a purity of 99% is placed in a tungsten boat, and evaporated for 30 minutes at an evaporation rate of 0.1 nm / s. After the evaporation operation, a PbI2 layer can be formed on the surface of the ZnO layer of the second intermediate member, thereby obtaining a third intermediate member.

[0055] S400: sputtering the third intermediate member to generate a NiO layer on the surface of the PbI2 layer, thereby obtaining a fourth intermediate member.

[0056] In this embodiment, magnetron sputtering technology may be used for sputtering. The fourth middle piece may be understood as a semi-finished product structure after a NiO layer is sputtered on the functional area of ​​the third middle piece.

[0057] In a possible implementation, when sputtering the third intermediate piece, argon is used as the working gas, the gas pressure is 0.1 MPa, the sputtering power is 100 W, and the sputtering time is 30 min.

[0058] In a specific implementation, the magnetron sputtering technology is continued to be used for the third intermediate piece, and NiO is sputtered on the surface of the third intermediate piece under the condition of Ar gas pressure of 0.1MPa (that is, argon is used as the working gas, and the gas pressure is 0.1MPa) and sputtering power of 100w. The sputtering time is 30min, and the purity of the NiO target material is 99.9%. After the sputtering operation, a NiO layer can be formed on the surface of the PbI2 layer of the third intermediate piece, thereby obtaining a fourth intermediate piece.

[0059] S500: performing a vapor deposition process on the fourth intermediate member to generate a MAPbI3 layer on the surface of the NiO layer, thereby obtaining a fifth intermediate member.

[0060] In this embodiment, thermal evaporation technology can be used for evaporation. The fifth middle piece can be understood as a semi-finished product structure after the MAPbI3 layer is evaporated on the functional area of ​​the fourth middle piece.

[0061] In a possible implementation, when evaporating the fourth intermediate member, PbI2 is firstly evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 7 min, and then MAI is evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 7 min.

[0062] In a specific embodiment, the fourth intermediate piece is placed in a thermal evaporation chamber, PbI2 with a purity of 99% and MAI with a purity of 99% are placed in different tungsten boats, and PbI2 is first evaporated for 7 minutes at an evaporation rate of 0.1 nm / s, and then MAI is evaporated for 7 minutes at an evaporation rate of 0.1 nm / s. After the evaporation operation, a MAPbI3 layer can be formed on the surface of the NiO layer of the fourth intermediate piece, thereby obtaining a fifth intermediate piece.

[0063] S600: vapor-depositing the fifth intermediate member to generate a C60 / BCP layer on the surface of the MAPbI3 layer to obtain a sixth intermediate member.

[0064] In this embodiment, thermal evaporation technology may be used for evaporation. The sixth middle piece may be understood as a semi-finished product structure after a C60 / BCP layer is evaporated on the functional area of ​​the fifth middle piece.

[0065] In a possible implementation, when the fifth intermediate member is evaporated, C60 is first evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 2 min, and then BCP is evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 5 min.

[0066] In a specific embodiment, the fifth intermediate piece is further placed in the thermal evaporation chamber, C60 with a purity of 99% and BCP with a purity of 99% are placed in different tungsten boats, C60 is first evaporated for 2 minutes at an evaporation rate of 0.1 nm / s, and then BCP is evaporated for 5 minutes at an evaporation rate of 0.1 nm / s. After the evaporation operation, a C60 / BCP layer can be formed on the surface of the MAPbI3 layer of the fifth intermediate piece, thereby obtaining a sixth intermediate piece, such as Figure 6 shown.

[0067] S700: remove the functional mask on the sixth middle piece, fix the Ag electrode mask at the center of the sixth middle piece, and generate an Ag electrode connected to the C60 / BCP layer by evaporation on the sixth middle piece based on the Ag electrode mask to obtain a composite device in which a rectifier diode and a photodiode are stacked in reverse.

[0068] In this embodiment, the Ag electrode mask can be made based on PET plastic. Thermal evaporation technology can be used for evaporation. The composite device can be understood as the final finished product structure.

[0069] In a possible implementation, when the Ag electrode connected to the C60 / BCP layer is formed by evaporation on the sixth intermediate member, the evaporation rate is 0.1 nm / s and the evaporation time is 14 min.

[0070] In a specific implementation manner, the functional mask on the surface of the sixth intermediate piece is removed, and the structure after removing the functional mask on the sixth intermediate piece is as follows: Figure 7 As shown. Take a square PET plastic with a thickness of 0.2mm and a side length of 2cm, and carve out 10 rectangular electrode windows of 2cm×0.015cm in the center of the square PET plastic. The interval between adjacent electrode windows is 0.015cm, that is, the final electrode interval is 0.015cm, thereby obtaining an Ag electrode mask. Use tape to stick the Ag electrode mask to the center of the 2cm×2cm sixth intermediate piece. The direction of the Ag electrode mask needs to ensure that the final Ag electrode direction is perpendicular to the ITO electrode direction. Then use thermal evaporation technology to evaporate Ag for 14 minutes at an evaporation rate of 0.1nm / s, and the purity of the Ag particles is 99.99%. After the evaporation operation, an Ag electrode can be formed on the sixth intermediate piece to obtain the final composite device of the rectifier diode and the photodiode stacked in reverse. It should be pointed out that the final composite device of the rectifier diode and the photodiode stacked in reverse can also refer to the device after the Ag electrode mask is finally removed. The structure after removing the Ag electrode mask on the composite device is as shown Figure 2 and Figure 8 shown.

[0071] According to the voltage-current curve obtained by testing the composite device (such as Fig. 9 ) and current-time curves (such as Fig.10 ), the composite device shows unidirectional conductivity under different lighting conditions, and different lighting conditions have a great influence on the response of the composite device, indicating that the composite device has excellent light response ability.

[0072] In a possible implementation, the window area of ​​the ITO electrode mask at least partially overlaps with the window area of ​​the functional mask, and does not overlap with the window area of ​​the Ag electrode mask at least outside the range of the window area of ​​the functional mask.

[0073] In this embodiment, the window area of ​​the ITO electrode mask is used to generate the corresponding ITO electrode, the window area of ​​the functional mask is used to generate the corresponding functional layer (such as ZnO layer, PbI2 layer, NiO layer, MAPbI3 layer, C60 / BCP layer, etc.), and the window area of ​​the Ag electrode mask is used to generate the corresponding Ag electrode. When the window area of ​​the ITO electrode mask overlaps with the window area of ​​the functional mask at least partially, it can ensure that the ITO electrode is connected to the functional layer. When the window area of ​​the Ag electrode mask does not overlap at least outside the range of the window area of ​​the functional mask, it can ensure that the ITO electrode is not connected to the Ag electrode.

[0074] In specific implementation, in order to test the rectification performance of the composite device, the functional mask can be removed when the fourth intermediate piece is obtained, and the Ag electrode mask can be fixed in the center of the fourth intermediate piece, and the Ag electrode connected to the NiO layer is generated by evaporation on the fourth intermediate piece based on the Ag electrode mask to obtain a rectification test piece. In a specific embodiment, the functional mask on the surface of the fourth intermediate piece is removed. Take a square PET plastic with a thickness of 0.2 mm and a side length of 2 cm, and carve 10 2cm×0.015cm rectangular electrode windows in the center of the square PET plastic. The interval between adjacent electrode windows is 0.015 cm, that is, the final electrode interval is 0.015 cm, so as to obtain an Ag electrode mask. The Ag electrode mask is taped to the center of the 2cm×2cm fourth intermediate piece. The direction of the Ag electrode mask needs to ensure that the final Ag electrode direction is perpendicular to the ITO electrode direction. Then, Ag was evaporated for 14 minutes at an evaporation rate of 0.1 nm / s using thermal evaporation technology. The purity of the Ag particles was 99.99%. After the evaporation operation, an Ag electrode was formed on the fourth intermediate piece, thereby obtaining a rectifier diode for testing, i.e., a rectifier test piece. Fig.13 The voltage-current curve of the rectifier test piece under test is as follows: Fig.14 As shown, the rectification test piece exhibits unidirectional conductivity under different lighting conditions, and the lighting conditions have little effect on the rectification ratio of the rectification test piece, indicating that the rectification test piece has excellent rectification characteristics, thereby further proving that the final composite device has excellent rectification characteristics.

[0075] In a specific implementation, in order to test the photoresponse performance of the composite device, when obtaining the first intermediate piece, the ITO electrode mask on the first intermediate piece can be removed, and the functional mask can be fixed in the center of the first intermediate piece, and based on the functional mask, a NiO layer is sputtered in the functional area of ​​the first intermediate piece to obtain the first intermediate piece for photoresponse test. When the NiO layer is sputtered to obtain the first intermediate piece for photoresponse test, the sputtering conditions can be the same as the sputtering conditions when the third intermediate piece is sputtered. The first intermediate piece for photoresponse test is treated by evaporation, and a MAPbI3 layer is generated in the functional area of ​​the first intermediate piece for photoresponse test to obtain the second intermediate piece for photoresponse test. When the first intermediate piece for photoresponse test is treated by evaporation, its evaporation conditions can be the same as the evaporation conditions when the fourth intermediate piece is treated by evaporation. The second intermediate piece for photoresponse test is treated by evaporation, and a C60 / BCP layer is generated in the functional area of ​​the second intermediate piece for photoresponse test to obtain the third intermediate piece for photoresponse test. When the second intermediate piece for photoresponse test is treated by evaporation, its evaporation conditions can be the same as the evaporation conditions when the fifth intermediate piece is treated by evaporation. The functional mask on the third light response test intermediate piece is removed, and the Ag electrode mask is fixed at the center of the third light response test intermediate piece, and an Ag electrode is generated by evaporation on the third light response test intermediate piece based on the Ag electrode mask to obtain a light response test piece, such as Fig.15 When the Ag electrode is formed by evaporation on the third intermediate piece of the light response test, the evaporation conditions can be the same as the evaporation conditions when the Ag electrode is formed by evaporation on the sixth intermediate piece. Fig.16 ) and current-time curves (such as Fig.17 ), the photoresponse test piece shows unidirectional conductivity under different lighting conditions, and different lighting conditions have a greater impact on the response of the photoresponse test piece, indicating that the photoresponse test piece has excellent light response ability, which further proves that the final composite device has excellent light response ability. The imaging picture of the composite device combined with the photodiode and the rectifier diode array is shown in Fig.11 As shown, the imaging of the photoresponse test piece is as follows Fig.12 As shown, the two devices show huge imaging differences under the same lighting conditions, indicating that the composite device combining photodiodes and rectifying diodes has great potential in suppressing pixel crosstalk.

[0076] The present invention also provides a composite device, which is obtained based on the above-mentioned preparation method.

[0077] The preparation method of the photodiode and rectifier diode composite device disclosed in the present invention adopts magnetron sputtering technology and thermal evaporation technology, uses ITO, ZnO, PbI2, NiO, MAI, C60, BCP and Ag as materials, realizes the combination of photodiode and rectifier diode, alleviates the pixel crosstalk phenomenon, and greatly improves the imaging accuracy.

[0078] The above embodiments should not limit the present invention in any way, and any technical solutions obtained by equivalent replacement or equivalent conversion shall fall within the protection scope of the present invention.

Claims

1. A method for preparing a composite device of a photodiode and a rectifier diode, characterized in that: The specific steps include: Fixing an ITO electrode mask at the center of a glass substrate, and sputtering an ITO electrode on the glass substrate based on the ITO electrode mask to obtain a first intermediate component; Removing the ITO electrode mask on the first intermediate piece, fixing a functional mask at the center of the first intermediate piece, and sputtering a ZnO layer connected to the ITO electrode in a functional area of ​​the first intermediate piece based on the functional mask to obtain a second intermediate piece; Treating the second intermediate member by evaporation to form a PbI2 layer on the surface of the ZnO layer, thereby obtaining a third intermediate member; sputtering the third intermediate member to generate a NiO layer on the surface of the PbI2 layer, thereby obtaining a fourth intermediate member; The fourth intermediate member is subjected to an evaporation treatment to form a MAPbI3 layer on the surface of the NiO layer, thereby obtaining a fifth intermediate member; The fifth intermediate member is subjected to an evaporation treatment to form a C60 / BCP layer on the surface of the MAPbI3 layer, thereby obtaining a sixth intermediate member; Removing the functional mask on the sixth middle piece, fixing the Ag electrode mask at the center of the sixth middle piece, and generating an Ag electrode connected to the C60 / BCP layer by evaporation on the sixth middle piece based on the Ag electrode mask, to obtain a composite device in which a rectifier diode and a photodiode are stacked in reverse; Wherein, when the second intermediate member is subjected to evaporation treatment, the evaporation rate is 0.1 nm / s and the evaporation time is 30 min; When the fourth intermediate member is subjected to evaporation treatment, PbI2 is firstly evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 7 min, and then MAI is evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 7 min; When the fifth intermediate member is subjected to evaporation treatment, C60 is firstly evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 2 min, and then BCP is evaporated at an evaporation rate of 0.1 nm / s and an evaporation time of 5 min. When the Ag electrode connected to the C60 / BCP layer is formed by evaporation on the sixth intermediate member, the evaporation rate is 0.1 nm / s and the evaporation time is 14 min.

2. The preparation method according to claim 1, characterized in that: The window area of ​​the ITO electrode mask at least partially overlaps with the window area of ​​the functional mask, and does not overlap with the window area of ​​the Ag electrode mask at least outside the range of the window area of ​​the functional mask.

3. The preparation method according to claim 1, characterized in that: When the ITO electrode is generated on the glass substrate by sputtering, argon gas is used as the working gas, the gas pressure is 0.1 MPa, the sputtering power is 100 W, and the sputtering time is 30 min.

4. The preparation method according to claim 1, characterized in that: When the ZnO layer connected to the ITO electrode is sputtered in the functional area of ​​the first intermediate piece, argon is used as the working gas, the gas pressure is 0.1 MPa, the sputtering power is 100 W, and the sputtering time is 30 minutes.

5. The preparation method according to claim 1, characterized in that: When the third intermediate piece is sputtered, argon is used as the working gas, the gas pressure is 0.1 MPa, the sputtering power is 100 W, and the sputtering time is 30 min.

6. A composite device, characterized in that: The method is based on any one of claims 1 to 5.

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