Image sensor

Abstract

An image sensor is provided. The image sensor includes: a first layer including a first pixel array for detecting light in a first wavelength region; a second layer including a second pixel array for detecting light in a second wavelength region, the second wavelength region being different from the first wavelength region; wherein the first layer and the second layer are stacked, and the first pixel array and the second pixel array are overlapped.

Description

Technical Field

[0001] The present disclosure relates to image sensors, and more particularly, to image sensors that capture multiple wavelength regions with one sensor. Background Art

[0002] Conventionally, cameras that capture light in the infrared (IR) region in addition to RGB (red, green, blue) are known, such as cameras such as ELP-USB0230X2-BV90 of Ellipse Technologies Inc. However, such cameras are large in size and expensive.

[0003] In addition, it is known that one or both of RGB and IR signals can be detected by one sensor. Such sensors can miniaturize cameras. Such sensors have a two-dimensional pixel array corresponding to the wavelength region to be detected (see, for example, Orit Skorka et al., "1.4 μm Pixel, 8 MP, >5 μm epi, RGB-IR Image Sensor", ON Semiconductor, Intelligent Sensing Division, USA).

[0004] For example, an RGB sensor is implemented using a two-dimensional RGB pixel array. When the two-dimensional array has a typical Bayer array, the pixels detecting light in each wavelength region of R, G, and B are only one-quarter, one-half, and one-quarter of the area of ​​the two-dimensional array, respectively. Figure 1 The two-dimensional RGB+IR pixel array shown in the figure realizes an RGB+IR sensor. For the two-dimensional RGB+IR pixel array, the pixels detecting light in each wavelength region of R, G, B and IR are only one-eighth, one-half, one-eighth and one-eighth of the area of ​​the two-dimensional array, respectively. Therefore, it is advantageous to provide an image sensor with even higher resolution.

[0005] Conventional RGB+IR image sensors also suffer from interference between RGB and IR signals. This reduces the color reproducibility of the captured image. To address this problem, it has been proposed to improve color reproducibility by subtracting the near-infrared signal from the visible light signal (see, for example, U.S. Patent No. 9,880,057). However, again, since the RGB+IR image sensor uses a two-dimensional RGB+IR pixel array, the above-mentioned problem about resolution still exists. In addition, in such image sensors, detecting near-infrared rays is crucial to improving color reproducibility, and the detectable infrared region is limited to the near-infrared region, otherwise additional pixels are required to detect the additional infrared region.

[0006] In addition, conventional RGB+IR image sensors use the same readout circuit for RGB and IR pixels, causing IR pixels that are more sensitive than RGB pixels to saturate earlier than RGB pixels. Since the dynamic range of an image sensor depends on the wavelength region of the pixel that saturates earlier, the greater the sensitivity difference between wavelength regions, the smaller the dynamic range.

[0007] Therefore, in the field of image sensors, it would be advantageous to provide techniques for solving the above-mentioned problems. Summary of the invention

[0008] The present invention aims to solve the above-mentioned problems in the field of image sensors.

[0009] [Solution to the problem]

[0010] According to a first aspect of the present invention, an image sensor is provided. The image sensor comprises:

[0011] a first layer including a first pixel array for detecting light in a first wavelength region;

[0012] a second layer comprising a second array of pixels for detecting light in a second wavelength region, the second wavelength region being different from the first wavelength region;

[0013] The first layer and the second layer are stacked, and the first pixel array and the second pixel array overlap.

[0014] According to a first possible implementation manner of the first aspect of the present invention, the image sensor further includes:

[0015] A first circuit layer is arranged to be stacked on the first layer and the third layer, wherein the first circuit layer includes a first readout circuit provided for each pixel of the first pixel array and a second readout circuit provided for each pixel of the second pixel array.

[0016] According to a second possible implementation manner of the first aspect of the present invention, the image sensor further includes:

[0017] a third layer comprising a third pixel array that detects light in a third wavelength region that is different from the first wavelength region and the second wavelength region, wherein the first layer, the second layer, and the third layer are stacked, and wherein the first pixel array, the second pixel array, and the third pixel array overlap;

[0018] The second circuit layer is arranged to be stacked on the third layer, wherein the second circuit layer includes a third readout circuit provided for each pixel of the third pixel array.

[0019] According to a third possible implementation manner of the first aspect of the present invention, the image sensor further includes:

[0020] a fourth layer comprising a fourth pixel array for detecting light in a fourth wavelength region, the fourth wavelength region being different from the first wavelength region, the second wavelength region and the third wavelength region, wherein the first layer, the second layer, the third layer and the fourth layer are stacked, the first pixel array, the second pixel array, the third pixel array and the fourth pixel array overlap, and the fourth pixel array further comprises a semiconductor photodiode formed on the semiconductor layer;

[0021] The second circuit layer further includes a fourth readout circuit provided for each pixel of the fourth pixel array.

[0022] According to a fourth possible implementation manner of the first aspect of the present invention, the first wavelength region, the second wavelength region and the third wavelength region are specific wavelength bands included in a predefined wavelength band, or wherein the first wavelength region, the second wavelength region and the third wavelength region are located between the wavelength at one end of the predefined band and a specific other wavelength.

[0023] According to a fifth possible implementation of the first aspect of the present invention, the image sensor, the first pixel array, the second pixel array and the third pixel array are each composed of a photoelectric conversion film that respectively absorbs the first wavelength region, the second wavelength region and the third wavelength region.

[0024] According to a sixth possible implementation manner of the first aspect of the present invention, the image sensor, the first wavelength region, the second wavelength region, the third wavelength region and the fourth wavelength region are respectively included in a blue region, a green region, a red region and an infrared region.

[0025] According to a seventh possible implementation manner of the first aspect of the present invention, the first wavelength region, the second wavelength region, the third wavelength region, and the fourth wavelength region are respectively included in a blue region, a green region, an infrared region, and a red region;

[0026] The image sensor further includes an infrared cut-off filter, and the infrared cut-off filter is arranged between the third layer and the fourth layer.

[0027] According to an eighth possible implementation of the first aspect of the present invention, the first wavelength region and the second wavelength region are respectively contained in the infrared region and the visible light region, and the first pixel array or the second pixel array has a plurality of color filters arranged in a two-dimensional pattern, wherein each color filter transmits a specific wavelength band.

[0028] According to a ninth possible implementation of the first aspect of the present invention, the first layer includes a photoelectric conversion film that detects light in a specific wavelength region in the infrared region;

[0029] The second pixel array includes semiconductor photodiodes formed on a semiconductor layer;

[0030] The first circuit layer is disposed between the color filter and the semiconductor layer.

[0031] According to a tenth possible implementation manner of the first aspect of the present invention, the image sensor further includes: an infrared cutoff filter disposed between the first layer and the second layer.

[0032] According to an eleventh possible implementation manner of the first aspect of the present invention, the second layer further includes a semiconductor photodiode, which is formed on the semiconductor layer and detects light in a specific wavelength region of the infrared region;

[0033] The first pixel array includes a photoelectric conversion film for absorbing visible light.

[0034] According to a twelfth possible implementation manner of the first aspect of the present invention, the image sensor further includes: a black filter disposed between the first layer and the second layer.

[0035] According to a thirteenth possible implementation manner of the first aspect of the present invention, the first circuit layer includes a semiconductor layer.

[0036] According to a fourteenth possible implementation manner of the first aspect of the present invention, the thickness of the semiconductor layer is approximately half or less of the inverse of the absorption coefficient of the semiconductor layer to light in the second wavelength region.

[0037] According to a fifteenth possible implementation manner of the first aspect of the present invention, the semiconductor layer includes a photodiode.

[0038] According to a sixteenth possible implementation manner of the first aspect of the present invention, the first wavelength region and the second wavelength region are specific wavelength bands included in a predefined wavelength band, or the first wavelength region and the second wavelength region are located between the wavelength at one end of the predefined band and a specific other wavelength.

[0039] According to a seventeenth possible implementation manner of the first aspect of the present invention, the first pixel array and the second pixel array are each composed of a photoelectric conversion film that absorbs the first wavelength region and the second wavelength region respectively.

[0040] The present invention has one or more of the following advantages.

[0041] (1) The resolution of the image sensor RGB and / or IR signals is improved.

[0042] (2) The color reproducibility of the image sensor is improved.

[0043] (3) The dynamic range of the image sensor RGB and / or IR signals is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the following describes the drawings describing the embodiments of the present application or the background technology. It is obvious that the drawings in the following description illustrate some embodiments of the present application, and a person of ordinary skill in the art can still obtain other drawings based on these drawings without creative work.

[0045] Figure 1 shows the layout of a pixel array used in a prior art image sensor;

[0046] Figure 2A shows a cross-sectional view of an RGB image sensor according to a first embodiment of the present invention;

[0047] Figure 2B shows the layout of the pixel array of the RGB image sensor according to the first embodiment of the present invention;

[0048] Figure 2C The characteristics of the photoelectric conversion film layer of the RGB image sensor according to the first embodiment of the present invention are shown;

[0049] Figure 2D shows the pixel output of the RGB image sensor according to the first embodiment of the present invention;

[0050] Figure 3A shows a cross-sectional view of an RGB+IR image sensor according to a second embodiment of the present invention;

[0051] Figure 3B shows the layout of the pixel array of the RGB+IR image sensor according to the second embodiment of the present invention;

[0052] Figure 3C shows the pixel output of the RGB+IR image sensor according to the second embodiment of the present invention;

[0053] Figure 4A shows a cross-sectional view of an RGB+IR image sensor according to a third embodiment of the present invention;

[0054] Figure 4Bshows the layout of the pixel array of the RGB+IR image sensor according to the third embodiment of the present invention;

[0055] Figure 4C shows the pixel output of the RGB+IR image sensor according to the third embodiment of the present invention;

[0056] Figure 5A shows a cross-sectional view of an RGB+IR image sensor according to a fourth embodiment of the present invention;

[0057] Figure 5B shows the layout of the pixel array of the RGB+IR image sensor according to the fourth embodiment of the present invention;

[0058] Figure 5C shows the characteristics of the perovskite thin film photodiode layer of the RGB+IR image sensor according to the fourth embodiment of the present invention;

[0059] Figure 5D shows the pixel output of the RGB+IR image sensor according to the fourth embodiment of the present invention;

[0060] Fig. 6A shows a cross-sectional view of an RGB+IR image sensor according to a fifth embodiment of the present invention;

[0061] Figure 6B shows the layout of the pixel array of the RGB+IR image sensor according to the fifth embodiment of the present invention;

[0062] Figure 6C shows the pixel output of the RGB+IR image sensor according to the fifth embodiment of the present invention;

[0063] Fig. 7A shows a cross-sectional view of an RGB+IR image sensor according to a sixth embodiment of the present invention;

[0064] Figure 7B shows the layout of the pixel array of the RGB+IR image sensor according to the sixth embodiment of the present invention;

[0065] Figure 7C The characteristics of the perovskite thin film photodiode layer and the semiconductor photodiode layer of the RGB+IR image sensor according to the sixth embodiment of the present invention are shown;

[0066] Fig.7D shows the pixel output of the RGB+IR image sensor according to the sixth embodiment of the present invention;

[0067] Figure 8 FIG. 7 is a schematic diagram showing a process of manufacturing an RGB+IR image sensor according to a seventh embodiment of the present invention. DETAILED DESCRIPTION

[0068] The terms used in this application are only used to describe specific possible implementations, rather than to limit this application. Unless otherwise expressly stated, the terms "a" and "said" used in this application, including the singular forms of the attached claims, are also intended to include plural forms. It should be further understood that the term "and / or" used in this specification refers to any or all possible combinations of one or more listed related items. It should be further understood that the term "comprising" used in this specification specifies the presence of features, data, information, entities, steps, operations, devices, units, elements and / or components, without excluding the presence or addition of one or more other features, data, information, entities, steps, operations, devices, units, elements, components and / or combinations thereof.

[0069] It should be understood that, although the terms "first", "second" and the like may be used in the embodiments of the present application to describe various devices or units, these devices or units should not be limited to these terms. These terms are only used to distinguish devices or units. For example, without departing from the scope of the embodiments of the present application, the first device and the first unit may be referred to as the second device and the second unit, respectively. Similarly, the second device and the second unit may be referred to as the first device and the first unit, respectively.

[0070] It should be noted that the order of steps in this application can be freely arranged. In other words, this application does not limit the order of steps.

[0071] The technical solutions in the embodiments of the present application are described below in conjunction with the accompanying drawings.

[0072] Typically, the blue wavelength region or blue (B) corresponds to a wavelength region of about 430–490 nm, the green wavelength region or green (G) corresponds to a wavelength region of about 490–550 nm, the red wavelength region or red (R) corresponds to a wavelength region of about 640–770 nm, and the infrared wavelength region or infrared (IR) corresponds to a wavelength region of about 780 nm–1 mm. Although these wavelength regions are used by way of example in the embodiments described herein, in other embodiments, each wavelength region may be narrower or wider, and may also overlap with each other. In other embodiments, other color spaces may be used, and corresponding other wavelength regions may be used.

[0073] In the embodiments described herein, "semiconductor" refers to silicon (Si) or the like, but in other embodiments, compound semiconductors such as gallium arsenide (GaAs) or other suitable semiconductors may be used.

[0074] Figure 2AFIG. 2 shows a cross-sectional view of an RGB image sensor according to a first embodiment of the present invention. The RGB image sensor 2000 includes a first sensor layer 2101 and a second sensor layer 2113 .

[0075] The first sensor layer 2101 includes a microlens 2102, a blue photoelectric conversion film layer 2103, and a first semiconductor layer 2104, which converts (absorbs or detects) light in the blue wavelength region into electric charge. The blue photoelectric conversion film layer 2103 is stacked to the first semiconductor layer 2104 and has a pixel array, which includes a plurality of pixels corresponding to blue. The first semiconductor layer 2104 has a readout circuit 2105 and an interconnect 2106. The thickness of the first semiconductor layer 2104 can be, for example, less than about 0.5μ. The thickness of the first semiconductor layer 2104 is, for example, about 0.3μm. The thickness of the first semiconductor layer 2104 is, for example, about half or less of the inverse of the absorption coefficient of the first semiconductor layer 2104 for green light. The interconnect 2106 couples the charge stored in each pixel of the blue photoelectric conversion film layer 2103 with the readout circuit 2105 corresponding to each pixel.

[0076] Optionally, the first semiconductor layer 2104 may include a semiconductor photodiode 2107. The optional semiconductor photodiode 2107 has a pixel array including, for example, a plurality of pixels corresponding to yellow. The optional semiconductor photodiode 2107 receives light in a wavelength region other than the blue wavelength region that passes through the blue photoelectric conversion film layer 2103, and converts the received light, for example, in the yellow wavelength region, into electric charge. The interconnect 2106 couples the charge stored by the semiconductor photodiode 2107 corresponding to each pixel with the readout circuit 2105 corresponding to each pixel. The semiconductor photodiode 2107 may be omitted, in which case the associated readout circuit 2105 and the interconnect 2106 may also be omitted.

[0077] The second sensor layer 2113 includes a green photoelectric conversion film layer 2108, a red photoelectric conversion film layer 2109, and a second semiconductor layer 2110. The green photoelectric conversion film layer converts light in the green wavelength region into electric charges, and the red photoelectric conversion film layer converts light in the red wavelength region into electric charges. The green photoelectric conversion film layer 2108 and the red photoelectric conversion film layer 2109 are stacked to the second semiconductor layer 2104 and have a pixel array, which includes a plurality of pixels corresponding to green and red, respectively. The second semiconductor layer 2110 includes a readout circuit 2111 and an interconnect 2112. The charge stored in each pixel of the green photoelectric conversion film layer 2108 is coupled to the readout circuit 2105 corresponding to each pixel in the first semiconductor layer 2104 via the interconnect 2106. The charge stored in each pixel of the red photoelectric conversion film layer 2109 is coupled to the readout circuit 2111 corresponding to each pixel in the second semiconductor layer 2110 via the interconnect 2112.

[0078] The readout circuit 2105 is provided for each pixel formed in the blue photoelectric conversion film layer 2103, each pixel formed by the semiconductor photodiode 2107, and each pixel formed in the green photoelectric conversion film layer 2108. The readout circuit 2105 may be provided below the first semiconductor layer 2104, i.e., opposite to the microlens 2102. Since the readout circuit 2105 is provided in the first semiconductor layer 2104 between the blue photoelectric conversion film layer 2103 and the green photoelectric conversion film layer 2108, the interconnection 2106 does not pass through any of the photoelectric conversion film layers 2103 and 2108.

[0079] The readout circuit 2111 is provided for each pixel formed in the red photoelectric conversion film layer 2109. The readout circuit 2111 is provided above the second semiconductor layer 2110, i.e., on the side facing the red photoelectric conversion film layer 2109, so that the interconnection 2112 does not pass through any of the photoelectric conversion film layers 2103, 2108, and 2109.

[0080] like Figure 2A As shown, in the RGB image sensor 2000 having a stacked structure of multiple thin films, the interconnects 2106 and 2112 that couple the readout circuits 2105 and 2111 with the photoelectric conversion film do not pass through the photoelectric conversion film layer, making it easier to manufacture the RGB image sensor 2000 and further shortening the wiring.

[0081] The light incident on the microlens 2102 reaches the blue photoelectric conversion film layer 2103, and the light in the blue wavelength region is detected. Next, the light passing through the blue photoelectric conversion film layer 2103 reaches the first semiconductor layer 2104, and the light in the yellow wavelength region, for example, is detected by the optional semiconductor photodiode 2107. Next, the light passing through the first semiconductor layer 2104 reaches the green photoelectric conversion film layer 2108, and the light in the green wavelength region is detected. In addition, the light passing through the green photoelectric conversion film layer 2108 reaches the red photoelectric conversion film layer 2109, and the light in the red wavelength region is detected. That is, in each of the blue photoelectric conversion film layer 2103, the optional semiconductor photodiode 2107, the green photoelectric conversion film layer 2108, and the red photoelectric conversion film layer 2109, the light corresponding to the blue, yellow (optional), green, and red wavelength regions is absorbed and detected over the entire area of ​​the RGB image sensor 2000. Since light incident on the RGB image sensor 2000 is absorbed over the entire area of ​​the RGB image sensor 2000 , the RGB image sensor 2000 significantly improves sensitivity compared to a conventional image sensor that detects each color through only a portion of the sensor area.

[0082] Figure 2B Schematic diagram showing the layout of a pixel array of an RGB image sensor 2000 according to the first embodiment of the present invention. Figure 2B 2201, 2202, 2203, and 2204 respectively represent the layout of the pixel array of the blue photoelectric conversion film layer 2103, the optional semiconductor photodiode 2107, the green photoelectric conversion film layer 2108, and the red photoelectric conversion film layer 2109. The order of the layouts 2201, 2202, 2203, and 2204 indicates the order in which they are placed from one side of the microlens 2102. Figure 2A and Figure 2B It can be seen that the photoelectric conversion film layers 2103, 2108 and 2109 and the optional semiconductor photodiode 2107 are stacked, the pixel arrays of each color overlap each other, and the pixel arrays of each color are distributed over the entire area of ​​the RGB image sensor 2000, so that Figure 1 Compared to the pixel array of the prior art shown, the red and blue sensitivities are improved by a factor of 8, and the green sensitivity is improved by a factor of 2. Compared to the prior art, even without the IR image sensor, the red and blue sensitivities are improved by a factor of 4, and the green sensitivity is improved by a factor of 2.

[0083] Figure 2CThe photoelectric conversion film layers 2103, 2108 and 2109 of the RGB image sensor 2000 according to the first embodiment of the present invention and the photoelectric conversion film layer 4101 described below are shown. The vertical axis represents the ideal normalized absorption coefficient of light, and the horizontal axis represents the wavelength (in nm). Curves 2301, 2302, 2303 and 2304 represent the idealized normalized light absorption coefficients of the blue photoelectric conversion film layer 2103, the green photoelectric conversion film layer 2108, the red photoelectric conversion film layer 2109 and the photoelectric conversion film layer 4101, which will be described below. The photoelectric conversion film itself is known, for example, according to Yazhong Wang et al., "Narrowband organic photodetectors-towardsminiaturized,spectroscopic sensing", Royal Society of Chemistry, October 27, 2021. There is no need to provide a color filter and / or an infrared cutoff filter because each photoelectric conversion film layer absorbs light in a specific wavelength region and does not absorb light in other wavelength regions.

[0084] Figure 2D The pixel output of the RGB image sensor 2000 according to the first embodiment of the present invention is shown. The vertical axis represents the normalized pixel output and the horizontal axis represents the wavelength (in nm). Curves 2401, 2402, 2403 and 2404 respectively represent the amplitude of the normalized output signal of each pixel of the blue photoelectric conversion film layer 2103, the optional semiconductor photodiode 2107, the green photoelectric conversion film layer 2108 and the red photoelectric conversion film layer 2109. If there is an optional semiconductor photodiode 2107, the green color can be better reproduced by adding curve 2402 to curve 2403. Each photoelectric conversion film layer absorbs light in a specific wavelength region, but does not absorb light in other wavelength regions, that is, it is not affected by light in other wavelength regions. Therefore, the RGB image sensor 2000 eliminates the infrared effect and improves the reproducibility of each color.

[0085] Figure 3A FIG. 2 shows a cross-sectional view of an RGB+IR image sensor 3000 according to a second embodiment of the present invention. Figure 3A In, with Figure 2A The same reference numerals in the figure denote Figure 2A The same components are not described again here. Figure 3A The RGB+IR image sensor 3000 shown in FIG. Figure 2AThe difference is that the second semiconductor layer 2110 includes a semiconductor photodiode 3101 that converts light in the infrared (IR) wavelength region into electric charge. The second semiconductor layer 2110 also includes a readout circuit 2111 and an interconnect 2112 that corresponds to each pixel formed by the semiconductor photodiode 3101. The charge stored in each pixel formed by the semiconductor photodiode 3101 is coupled to the readout circuit 2111 corresponding to each pixel in the second semiconductor layer 2110 via the interconnect 2112. In the second embodiment of the present invention, the thickness of the second semiconductor layer 2110 is, for example, about 7 μm.

[0086] Since the readout circuit 2111 is disposed above the second semiconductor layer 2110, i.e., facing the red photoelectric conversion film layer 2109, the interconnection 2112 between the semiconductor photodiode 3101 and the readout circuit 2111 does not pass through any of the photoelectric conversion film layers 2103, 2108, and 2109. Therefore, the present invention makes it easy to manufacture the RGB+IR image sensor 3000.

[0087] In addition, since different readout circuits 2105 and 2111 are used for each of R, G, B, and IR in the RGB+IR image sensor 3000, even when the readout circuit corresponding to the pixel of one wavelength region is saturated first due to the difference in sensitivity to the wavelength region, the gain of the circuit is reduced, thereby preventing saturation. Therefore, since the IR pixel, which is more sensitive than the RGB pixel, is saturated earlier than the RGB pixel, the present invention can solve the conventional problem that the dynamic range of the image sensor is reduced.

[0088] Of the light incident on the microlens 2102, the light that passes through the photoelectric conversion film layers 2103, 2108, and 2109 and the first semiconductor layer 2104 reaches the semiconductor photodiode 3101, and the light in the infrared wavelength region is detected by the semiconductor photodiode 3101 over the entire area of ​​the RGB+IR image sensor 3000. In the RGB+IR image sensor 3000, the light incident on the RGB+IR image sensor 3000 is absorbed over the entire area of ​​the RGB+IR image sensor 3000, which significantly improves sensitivity compared to a conventional image sensor that detects each color through only a portion of the sensor area.

[0089] Figure 3B FIG. 2 shows the layout of the pixel array of the RGB+IR image sensor 3000 according to the second embodiment of the present invention. Figure 3B In, with Figure 2B The same reference numerals in the figure denote Figure 2B The same components are not described again here. Figure 3BThe pixel array layout of the RGB+IR image sensor 3000 shown is similar to Figure 2B The difference is that a pixel array layout 3201 formed by a semiconductor photodiode 3101 provided in the second semiconductor layer 2110 is added. Figure 3A and Figure 3B It can be seen that the photoelectric conversion film layers 2103, 2108 and 2109, the optional semiconductor photodiode 2107 and the semiconductor photodiode 3101 are stacked, the pixel arrays of R, G, B and IR overlap each other, and each pixel array is distributed over the entire area of ​​the RGB+IR image sensor 3000, so that Figure 1 Compared to the prior art pixel array shown, red and blue sensitivity are improved by 8 times, green sensitivity is improved by 2 times, and infrared sensitivity is improved by 4 times.

[0090] The characteristics of the photoelectric conversion film layers 2103, 2108 and 2109 of the RGB+IR image sensor 3000 according to the second embodiment of the present invention are similar to those of Figure 2C The characteristics are similar.

[0091] Figure 3C FIG. 2 shows the pixel output of the RGB+IR image sensor 3000 according to the second embodiment of the present invention. Figure 3C In, with Figure 2D The same reference numerals in the figure denote Figure 2D The same components are not described again here. Figure 3C and Figure 2D The difference is that Figure 3C 3301 is included which represents the amplitude of the normalized output signal of each pixel of the semiconductor photodiode 3101. Figure 3C It can be seen that the RGB+IR image sensor 3000 has high sensitivity in the IR region similar to that in the RGB region.

[0092] Figure 4A FIG. 4 shows a cross-sectional view of an RGB+IR image sensor 4000 according to a third embodiment of the present invention. Figure 4A In, with Figure 2A or Figure 3A The same reference numerals in the figure denote Figure 2A or Figure 3A The same components are not described again here. Figure 4A The RGB+IR image sensor 4000 shown in FIG. Figure 3AThe difference is that the red photoelectric conversion film layer 2109 is replaced by an infrared (IR) photoelectric conversion film layer 4101, and the semiconductor photodiode 3101 is replaced by a semiconductor photodiode 4102, the semiconductor photodiode 3101 converts light in the infrared (IR) wavelength region into electric charge, and the semiconductor photodiode 4102 converts light in the red wavelength region into electric charge. In addition, optionally, the RGB+IR image sensor 4000 may include an infrared cutoff filter 4103, which cuts off infrared rays and transmits visible light. The second semiconductor layer 2110 includes a readout circuit 2111 and an interconnect 2112, which corresponds to each pixel formed in the infrared (IR) photoelectric conversion film layer 4101 and each pixel formed by the semiconductor photodiode 4102. In the third embodiment of the present invention, the thickness of the second semiconductor layer 2110 is, for example, about 2.7 μm.

[0093] Among the light incident on the microlens 2102, the light transmitted through the photoelectric conversion film layers 2103, 2108, and 2104 reaches the infrared photoelectric conversion film layer 4101, and the light in the infrared wavelength region is detected by the infrared photoelectric conversion film layer 4101 over the entire area of ​​the RGB+IR image sensor 4000. After the infrared cutoff filter 4103 removes infrared rays, the light transmitted through the infrared photoelectric conversion film layer 4101 reaches the semiconductor photodiode 4102, and the light in the red wavelength region is detected by the semiconductor photodiode 4102 over the entire area of ​​the RGB+IR image sensor 4000. Since the light incident on the RGB+IR image sensor 4000 is absorbed over the entire area of ​​the RGB+IR image sensor 4000, the RGB+IR image sensor 4000 significantly improves sensitivity compared to a conventional image sensor that detects each color through only a portion of the sensor area.

[0094] Figure 4B FIG. 4 shows the layout of the pixel array of the RGB+IR image sensor 4000 according to the third embodiment of the present invention. Figure 4B In, with Figure 2B or Figure 3B The same reference numerals in the figure denote Figure 2B or Figure 3B The same components are not described again here. Figure 4B The pixel array layout of the RGB+IR image sensor 4000 shown is similar to Figure 3B The difference is that the pixel array layout includes a pixel array layout 4201 of the infrared photoelectric conversion film layer 4101 and a pixel array layout 4202 formed by a semiconductor photodiode 4102 provided in the second semiconductor layer 2110 . Figure 4B and Figure 3BThe stacking order of the red pixel array and the infrared pixel array is different. Figure 4A and Figure 4B It can be seen that the photoelectric conversion film layers 2103, 2108 and 4101, the optional semiconductor photodiode 2107 and the semiconductor photodiode 4102 are stacked, the pixel arrays of R, G, B and IR overlap each other, and each pixel array is distributed over the entire area of ​​the RGB+IR image sensor 4000, so that Figure 1 Compared to the prior art pixel array shown, red and blue sensitivity are improved by 8 times, green sensitivity is improved by 2 times, and infrared sensitivity is improved by 4 times.

[0095] The characteristics of the photoelectric conversion film layers 2103, 2108 and 4101 of the RGB+IR image sensor 4000 according to the third embodiment of the present invention are similar to Figure 2C The same characteristics as in.

[0096] Figure 4C FIG. 4 shows the pixel output of the RGB+IR image sensor 4000 according to the third embodiment of the present invention. Figure 4C In, with Figure 2D or Figure 3C The same reference numerals in the figure denote Figure 2D or Figure 3C The same components are not described again here. Figure 4C and Figure 3C The difference is that Figure 4C The graphs 4301 and 4302 are included to show the amplitude of the normalized output signal of each pixel of the infrared photoelectric conversion film layer 4101 and the semiconductor photodiode 4102. Figure 3C It can be seen that the RGB+IR image sensor 4000 has a high sensitivity in the IR region similar to that in the RGB region. Since the RGB+IR image sensor 4000 uses the infrared photoelectric conversion film layer 4101 for infrared detection, Figure 3C In contrast, the infrared region to be detected can be limited to a specific wavelength region. Figure 4C It is shown that the infrared region around 800 nm is detected, but depending on the characteristics of the photoelectric conversion film layer used, a desired wavelength region can be detected.

[0097] Figure 5A FIG. 4 shows a cross-sectional view of an RGB+IR image sensor 5000 according to a fourth embodiment of the present invention. Figure 5A In, with Figure 3A The same reference numerals in the figure denote Figure 3A The same components are not described again here. Figure 5A The RGB+IR image sensor 5000 shown in FIG. Figure 3AThe difference is that the photoelectric conversion film layers 2103, 2108 and 2109 are replaced by perovskite thin film photodiode layers 5103, 5108 and 5109, respectively. The blue perovskite thin film photodiode layer 5103, the green perovskite thin film photodiode layer 5108 and the red perovskite thin film photodiode layer 5109 convert light in the blue, green and red wavelength regions into electric charges, respectively. The operation of the RGB+IR image sensor 5000 can be explained by replacing the photoelectric conversion film layers 2103, 2108 and 2109 of the RGB+IR image sensor 3000 with the perovskite thin film photodiode layers 5103, 5108 and 5109, respectively.

[0098] Figure 5B FIG. 4 shows the layout of the pixel array of the RGB+IR image sensor 5000 according to the fourth embodiment of the present invention. Figure 5B In, with Figure 2B , Figure 3B or Figure 4B The same reference numerals in the figure denote Figure 2B , Figure 3B or Figure 4B The same components are not described again here. Figure 5B The pixel array layout of the RGB+IR image sensor 5000 shown in FIG. Figure 3B The difference is that the pixel array layouts 2201, 2203 and 2204 formed by the photoelectric conversion film layers 2103, 2108 and 2109 are replaced by pixel array layouts 5201, 5203 and 5204 formed by the perovskite thin film photodiode layers 5103, 5108 and 5109, respectively. Figure 5A and Figure 5B It can be seen that the perovskite thin film photodiode layers 5103, 5108, 5109, the optional semiconductor photodiode 2107 and the semiconductor photodiode 3101 are stacked, and the pixel arrays of R, G, B and IR overlap each other, and each pixel array is distributed over the entire area of ​​the RGB+IR image sensor 5000, so that Figure 1 Compared to the prior art pixel array shown, red and blue sensitivity are improved by 8 times, green sensitivity is improved by 2 times, and infrared sensitivity is improved by 4 times.

[0099] Figure 5CThe characteristics of the perovskite thin film photodiode layers 5103, 5108 and 5109 of the RGB+IR image sensor 5000 according to the fourth embodiment of the present invention are shown. The vertical axis represents the ideal normalized absorption coefficient of light, and the horizontal axis represents the wavelength (in nm). Curves 5301, 5302 and 5303 represent the idealized normalized light absorption coefficients of the blue perovskite thin film photodiode layer 5103, the green perovskite thin film photodiode layer 5108 and the red perovskite thin film photodiode layer 5109, respectively. Perovskite thin film photodiodes themselves are known, for example in the literature by Wayesh Qarony et al., "Vertically Stacked Perovskite Detectors for Color Sensing and Color Vision", Advanced Materials Interfaces, September 10, 2020, Vol. 7, No. 17. Since each perovskite thin-film photodiode layer absorbs light in a specific wavelength region and does not absorb light in other wavelength regions, there is no need to provide a color filter and / or an infrared cutoff filter.

[0100] Figure 5D The pixel output of the RGB+IR image sensor 5000 according to the fourth embodiment of the present invention is shown. The vertical axis represents the normalized pixel output and the horizontal axis represents the wavelength (in nm). Curves 5401, 5402, 5403, 5404 and 5405 respectively represent the amplitude of the normalized output signal of each pixel of the blue perovskite thin film photodiode layer 5103, the optional semiconductor photodiode 2107, the green perovskite thin film photodiode layer 5108, the red perovskite thin film photodiode layer 5109 and the semiconductor photodiode 3101. If there is an optional semiconductor photodiode 2107, the green color can be better reproduced by adding curve 5402 to curve 5403. Each perovskite thin film photodiode layer absorbs light in a specific wavelength region, but does not absorb light in other wavelength regions, that is, it is not affected by light in other wavelength regions. Therefore, the RGB+IR image sensor 5000 eliminates the infrared effect and improves the reproducibility of each color.

[0101] Fig. 6A FIG. 4 shows a cross-sectional view of an RGB+IR image sensor 6000 according to a fifth embodiment of the present invention. Fig. 6A In, with Figure 2A The same reference numerals in the figure denote Figure 2AThe same elements as in the above are not described again. The RGB+IR image sensor 6000 does not include the first semiconductor layer 2104. The RGB+IR image sensor 6000 includes a microlens 2102, an infrared photoelectric conversion film layer 6101, an infrared cutoff filter 4103, a color filter 6102, and a semiconductor layer 6103. The infrared photoelectric conversion film layer converts light in the infrared wavelength region into electric charges, the infrared cutoff filter cuts off infrared light and transmits visible light, and the color filter transmits light in a specific wavelength region. The infrared photoelectric conversion film layer 6101, the infrared cutoff filter 4103, and the color filter 6102 are formed, for example, Fig. 6A The order shown is stacked on top of the semiconductor layer 6103. The infrared photoelectric conversion film layer 6101 has a pixel array, which includes a plurality of pixels corresponding to infrared rays. The thickness of the semiconductor layer 6103 is, for example, about 3 μm. The semiconductor layer 6103 includes a semiconductor photodiode 6104, a readout circuit 2111, and interconnects 6105 and 6106. The interconnect 6105 couples the charge stored in each pixel of the infrared photoelectric conversion film layer 6101 with the readout circuit 2111 corresponding to each pixel. The semiconductor photodiode 6104 forms a pixel R, G, or B according to the color of the color filter set thereon. The interconnect 6106 couples the charge stored in the semiconductor photodiode 6104 corresponding to each pixel with the readout circuit 2111 corresponding to each pixel.

[0102] The readout circuit 2111 is individually provided for each pixel formed in the infrared photoelectric conversion film layer 6101 and each pixel formed by the semiconductor photodiode 6104. Therefore, the present invention can solve the conventional problem that the dynamic range of the image sensor is reduced due to the premature saturation of the readout circuit corresponding to the sensitive pixel.

[0103] The readout circuit 2111 may be provided between the color filter 6102 and the semiconductor layer 6103. Thus, the interconnect 6105 passes through the infrared cut filter and the color filter but does not pass through the infrared photoelectric conversion film layer 6101. This arrangement makes it easy to manufacture the RGB+IR image sensor 6000 and further shortens the wiring.

[0104] The light incident on the microlens 2102 reaches the infrared photoelectric conversion film layer 6101, and the light in the infrared wavelength region is detected. Then, the remaining infrared rays are removed by the infrared cutoff filter 4103, and the light in the wavelength region other than the infrared rays enters the color filter 6102. The color filter 6102 has any pattern of RGB, such as a Bayer array, etc. The light passing through the color filter 6102 reaches the semiconductor photodiode 6104 and is detected in the semiconductor photodiode. In the RGB+IR image sensor 6000, the light in the infrared wavelength region is absorbed over the entire area of ​​the RGB+IR image sensor 6000, and the light corresponding to the blue, green, and red wavelength regions is detected at the semiconductor photodiode 6104 according to the pattern of the color filter 6102. Therefore, compared with conventional image sensors that detect infrared rays only through a portion of the sensor area, the resolution of infrared rays is significantly improved. In addition, compared with Figure 1 The patterns shown are different, and the pixel array corresponding to infrared and the pixel array corresponding to RGB are separated into different planes, so that a high-resolution infrared image can be obtained while maintaining the resolution of the color image.

[0105] Figure 6B FIG. 4 shows a layout of a pixel array of an RGB+IR image sensor 6000 according to a fifth embodiment of the present invention. Figure 6B 6201 and 6202 respectively represent the layout of the pixel array of the infrared photoelectric conversion film layer 6101 and the semiconductor photodiode 6104. The order of the layouts 6201 and 6202 indicates the order in which they are placed from one side of the microlens 2102. Fig. 6A and Figure 6B It can be seen that the infrared photoelectric conversion film layer 6101 and the semiconductor photodiode layer 6103 are stacked, the infrared pixel array and the RGB pixel array overlap each other, and the infrared pixel array is distributed over the entire area of ​​the RGB+IR image sensor 6000, so that Figure 1 Compared to the prior art pixel array shown, the red and blue sensitivities are improved by a factor of 2, and the infrared sensitivity is improved by a factor of 4.

[0106] The characteristics of the infrared photoelectric conversion film layer 6101 of the RGB+IR image sensor 6000 according to the fifth embodiment of the present invention can be Figure 2C The curve 2304 in is similar.

[0107] Figure 6CThe pixel output of the RGB+IR image sensor 6000 according to the fifth embodiment of the present invention is shown. The vertical axis represents the normalized pixel output, and the horizontal axis represents the wavelength (in nm). Curve 6301 corresponds to each pixel of the infrared photoelectric conversion film layer 6101, and curves 6302, 6303, and 6304 correspond to each pixel of the blue, green, and red semiconductor photodiodes 6104, respectively. Since the infrared photoelectric conversion film layer 6101 absorbs only infrared rays in a specific wavelength region over the entire area of ​​the RGB+IR image sensor 6000, high resolution can be achieved for infrared rays in the required wavelength region. On the other hand, since the infrared rays that pass through the infrared photoelectric conversion film layer 6101 are removed by the infrared cutoff filter, the semiconductor photodiode 6104 is not affected by the infrared rays. Therefore, the RGB+IR image sensor 6000 improves the reproducibility of each color.

[0108] Fig. 7A FIG. 4 shows a cross-sectional view of an RGB+IR image sensor 7000 according to a sixth embodiment of the present invention. Fig. 7A In, with Fig. 6A The same reference numerals in the figure denote Fig. 6A The same components as those in the RGB+IR image sensor 7000 are not described in detail here. The RGB+IR image sensor 7000 includes a microlens 2102, a color filter 6102, a perovskite thin film photodiode layer 7101, a black filter 7102, and a semiconductor layer 7103. The color filter transmits light in a specific wavelength region, the perovskite thin film photodiode layer converts visible light into electric charge, and the black filter cuts off visible light and transmits infrared light. The color filter 6102, the perovskite thin film photodiode layer 7101, and the black filter 7102 are formed in a manner such as, for example, Fig. 7A The order shown is stacked on the semiconductor layer 7103. The perovskite thin film photodiode layer 7101 forms a pixel R, G or B according to the color of the color filter set thereon. The thickness of the semiconductor layer 7103 is, for example, about 7 μm. The semiconductor layer 7103 includes a semiconductor photodiode 7104, a readout circuit 7106 and an interconnect 7105. The interconnect 7105 couples the charge stored in each pixel of the perovskite thin film photodiode layer 7101 with the readout circuit 7106 corresponding to each pixel. Another interconnect 7105 couples the charge stored in the semiconductor photodiode 7104 corresponding to each pixel with the readout circuit 7106 corresponding to each pixel.

[0109] The readout circuit 7106 is provided for each pixel formed in the perovskite thin film photodiode layer 7101 and each pixel formed by the semiconductor photodiode 7104. The readout circuit 7106 can be provided below the semiconductor layer 7103, that is, opposite to the microlens. Therefore, the interconnect 7105 passes through the black filter 7102, but does not pass through the perovskite thin film photodiode layer 7101. This arrangement makes it easy to manufacture the RGB image sensor 7000 and further shortens the wiring.

[0110] Light incident on the microlens 2102 passes through the color filter 6102 before reaching the perovskite thin-film diode layer 7101 and being detected thereby. Light that is not absorbed by the perovskite thin-film diode layer 7101 reaches and is detected by the semiconductor photodiode 7104 in the semiconductor photodiode layer 7103 after the visible light component is removed when passing through the black filter 7102. In the RGB+IR image sensor 7000, light corresponding to the blue, green, and red wavelength regions is detected in the perovskite thin-film diode layer 7101 according to the pattern of the color filter 6102, and light in the infrared wavelength region is detected over the entire area of ​​the RGB+IR image sensor 7000 by the semiconductor photodiode 7104. Therefore, compared with conventional image sensors that detect infrared rays through only a portion of the sensor area, the resolution of infrared rays is significantly improved. In addition, compared with Figure 1 The patterns shown are different, and the pixel array corresponding to infrared and the pixel array corresponding to RGB are separated into different planes, so that a high-resolution infrared image can be obtained while maintaining the resolution of the color image.

[0111] Figure 7B FIG. 4 shows a layout of a pixel array of an RGB+IR image sensor 7000 according to a sixth embodiment of the present invention. Figure 7B 7201 and 7202 respectively represent the layout of the pixel array of the perovskite thin film diode layer 7101 and the semiconductor photodiode 7104. The order of the layouts 7201 and 7202 indicates the order in which they are placed from one side of the microlens 2102. Fig. 7A and Figure 7B It can be seen that the perovskite thin film diode layer 7101 and the semiconductor photodiode layer 7103 are stacked, the RGB pixel array and the infrared light pixel array overlap each other, and the infrared pixel array is distributed over the entire area of ​​the RGB+IR image sensor 7000, so that Figure 1 Compared to the prior art pixel array shown, the red and blue sensitivities are improved by a factor of 2, and the infrared sensitivity is improved by a factor of 4.

[0112] Figure 7CThe characteristics of the perovskite thin film photodiode layer 7101 and the semiconductor photodiode 7104 of the RGB+IR image sensor 7000 according to the sixth embodiment of the present invention are shown. The vertical axis represents the ideal normalized absorption coefficient of light, and the horizontal axis represents the wavelength (in nm). Curves 7301 and 7302 represent the idealized normalized light absorption coefficients of the perovskite thin film photodiode layer 7101 and the semiconductor photodiode 7104, respectively. Since the perovskite thin film photodiode layer 7101 absorbs visible light but not infrared light, the perovskite thin film photodiode layer is not affected by infrared light. Since the semiconductor photodiode 7104 detects light after the visible light is removed by the black filter 7102, the semiconductor photodiode is not affected by visible light. Therefore, the RGB+IR image sensor 7000 improves the reproducibility of the RGB image and the IR image by suppressing the noise caused by the mixing of the RGB signal and the IR signal.

[0113] Fig.7D Pixel output of the RGB+IR image sensor 7000 according to the sixth embodiment of the present invention is shown. The vertical axis represents the normalized pixel output, and the horizontal axis represents the wavelength (in nm). Curves 7401, 7402, and 7403 correspond to the blue, green, and red pixels of the perovskite thin film photodiode layer 7101, and curve 7404 corresponds to each pixel of the semiconductor photodiode 7104. The blue, green, and red pixels of the perovskite thin film photodiode layer 7101 absorb only the light in the corresponding color wavelength region and are not affected by the light in other wavelength regions. Therefore, the RGB+IR image sensor 7000 achieves high color reproducibility. Since the visible light that has passed through the perovskite thin film photodiode layer 7101 is removed by the black filter 7102, the semiconductor photodiode 7104 is also not affected by the visible light. Since the semiconductor photodiode layer 7103 detects infrared rays only over the entire area of ​​the RGB+IR image sensor 7000, high resolution can be achieved for infrared rays.

[0114] Figure 8 FIG. 8 is a schematic diagram showing a manufacturing process of an image sensor 800 according to a seventh embodiment of the present invention. The seventh embodiment can be applied to an image sensor having a first sensor layer and a second sensor layer, that is, Figure 2A The RGB image sensor 2000 and Figure 3A , Figure 4A and Figure 5A RGB+IR image sensors 3000, 4000 and 5000.

[0115] In S1, a first sensor layer 810 is formed, and a second sensor layer 820 is formed simultaneously, in parallel, or separately from the first sensor layer 810. A readout circuit 811, an interconnect 812, a semiconductor photodiode 813, etc. are formed in the first sensor layer 810. These may be the readout circuit, interconnect, and semiconductor photodiode described in the above embodiment. The second sensor layer 820 is formed with a readout circuit 821, an interconnect 822, photoelectric conversion layers 823 and 824, a semiconductor photodiode 825, etc. The photoelectric conversion layers 823 and 824 may be the perovskite thin film diode layer or the photoelectric conversion film layer described in the above embodiment.

[0116] In S2 , the first sensor layer 810 is inverted, superimposed, and coupled to the second sensor layer 820 .

[0117] In S3, the semiconductor die of the first sensor layer 810 is thinned to form a first semiconductor layer 814, retaining necessary circuits, including semiconductor photodiodes 813, etc. The first semiconductor layer 814 may be the first semiconductor layer 2104 described in the above embodiment.

[0118] In S4, a photoelectric conversion layer 815 and a microlens 816 are formed on the first semiconductor layer. The photoelectric conversion layer 815 may be a perovskite thin film diode layer or a photoelectric conversion film layer as described in the above embodiments.

[0119] Obviously, without departing from the scope of the present application, those skilled in the art may make various modifications and variations to the present application. In this way, the present application is also intended to cover these modifications and variations of the present application, provided that these modifications and variations are within the scope of protection defined by the attached claims and their equivalents.

Claims

1. An image sensor, characterized in that: include: a first layer including a first pixel array for detecting light in a first wavelength region; a second layer comprising a second array of pixels for detecting light in a second wavelength region, the second wavelength region being different from the first wavelength region; The first layer and the second layer are stacked, and the first pixel array and the second pixel array overlap.

2. The image sensor according to claim 1, characterized in that Also includes: A first circuit layer is arranged to be stacked on the first layer and the second layer, wherein the first circuit layer includes a first readout circuit provided for each pixel of the first pixel array and a second readout circuit provided for each pixel of the second pixel array.

3. The image sensor according to claim 2, characterized in that Also includes: a third layer comprising a third pixel array that detects light in a third wavelength region that is different from the first wavelength region and the second wavelength region, wherein the first layer, the second layer, and the third layer are stacked, and wherein the first pixel array, the second pixel array, and the third pixel array overlap; The second circuit layer is arranged to be stacked on the third layer, wherein the second circuit layer includes a third readout circuit provided for each pixel of the third pixel array.

4. The image sensor according to claim 3, characterized in that: Also includes: a fourth layer comprising a fourth pixel array for detecting light in a fourth wavelength region, the fourth wavelength region being different from the first wavelength region, the second wavelength region and the third wavelength region, wherein the first layer, the second layer, the third layer and the fourth layer are stacked, the first pixel array, the second pixel array, the third pixel array and the fourth pixel array overlap, and the fourth pixel array further comprises a semiconductor photodiode formed on the semiconductor layer; The second circuit layer further includes a fourth readout circuit provided for each pixel of the fourth pixel array.

5. The image sensor according to claim 3 or 4, characterized in that: The first wavelength region, the second wavelength region, and the third wavelength region are specific wavelength bands included in a predefined wavelength band, or wherein the first wavelength region, the second wavelength region, and the third wavelength region are located between a wavelength at one end of a predefined wavelength band and a specific other wavelength.

6. The image sensor according to claim 5, characterized in that The first pixel array, the second pixel array, and the third pixel array are each composed of a photoelectric conversion film that absorbs the first wavelength region, the second wavelength region, and the third wavelength region, respectively.

7. The image sensor according to claim 5, characterized in that: The first wavelength region, the second wavelength region, the third wavelength region, and the fourth wavelength region are respectively included in a blue region, a green region, a red region, and an infrared region.

8. The image sensor according to claim 5, characterized in that: The first wavelength region, the second wavelength region, the third wavelength region and the fourth wavelength region are respectively included in a blue region, a green region, an infrared region and a red region; The image sensor further includes an infrared cut-off filter, and the infrared cut-off filter is arranged between the third layer and the fourth layer.

9. The image sensor according to claim 2, characterized in that: The first wavelength region and the second wavelength region are included in an infrared region and a visible light region, respectively, and the first pixel array or the second pixel array has a plurality of color filters arranged in a two-dimensional pattern, wherein each color filter transmits a specific wavelength band.

10. The image sensor according to claim 9, characterized in that: The first layer includes a photoelectric conversion film that detects light in a specific wavelength region in the infrared region; The second pixel array includes semiconductor photodiodes formed on a semiconductor layer; The first circuit layer is disposed between the color filter and the semiconductor layer.

11. The image sensor according to claim 9 or 10, characterized in that: Also includes: The infrared cut-off filter is arranged between the first layer and the second layer.

12. The image sensor according to claim 11, the second layer further comprising a semiconductor photodiode formed on the semiconductor layer and detecting light in a specific wavelength region of the infrared region; The first pixel array includes a photoelectric conversion film for absorbing visible light.

13. The image sensor according to claim 8, characterized in that Also includes: The black filter is arranged between the first layer and the second layer.

14. The image sensor according to claim 2, characterized in that: The first circuit layer includes a semiconductor layer.

15. The image sensor according to claim 14, characterized in that: The thickness of the semiconductor layer is approximately half or less of the inverse of the absorption coefficient of the semiconductor layer for light in the second wavelength region.

16. The image sensor according to claim 14 or 15, characterized in that: The semiconductor layer includes a photodiode.

17. The image sensor according to claim 1 or 2, characterized in that: The first wavelength region and the second wavelength region are specific wavelength bands included in a predefined wavelength band, or between a wavelength at one end of a predefined wavelength band and specific other wavelengths.

18. The image sensor according to claim 5, characterized in that The first pixel array and the second pixel array are each composed of a photoelectric conversion film that absorbs the first wavelength region and the second wavelength region, respectively.

Images