Gray-scale control display structure of a base phase change material

Abstract

The present invention provides a gray-scale regulation display structure based on phase change materials, comprising: a phase change material layer, where the phase change material layer has at least two layers, and the crystallization temperature gradient of the phase change material layer is at least above 50 degrees Celsius; a dielectric layer, with a dielectric layer on both the upper and lower sides of each phase change material layer, and the dielectric layer is used to change the crystallization temperature of the phase change material layer; a thermal isolation layer, located between the phase change material layers; and an electrode layer, located on one side or both sides of the dielectric layer, for electrically heating and driving the phase change material layer. The present invention can precisely adjust the gray scale of a phase change display device, is applicable to most phase change materials, has a simple structure, is not easily affected by the environment, and is easy to integrate.

Description

Technical Field

[0001] The present invention relates to the field of phase change display technology, and particularly to a grayscale modulation display structure based on a phase change material. Background Art

[0002] Phase change display technology stands out among numerous display technologies, and its advantages are particularly evident in comparison. Compared with the traditional Liquid Crystal Display (LCD) technology, phase change display does not require a backlight, so it is more superior in black display and energy consumption. LCD relies on polarized light and the rotation of liquid crystal molecules to control the display content, which limits its response speed and contrast performance. While phase change display directly adjusts the light transmittance through the phase change of the material, providing a faster response time and higher contrast.

[0003] Compared with the Organic Light Emitting Diode (OLED) technology, phase change display also exhibits the characteristic of non-volatility. OLED achieves black display by turning off pixels, while phase change display absorbs light through the amorphous state of the material, thus achieving a true black display and avoiding the common burn-in problem in OLED. In addition, the manufacturing cost and material life of OLED are also challenges it faces. Phase change display technology shows potential advantages in cost-effectiveness and durability due to its material characteristics and simple manufacturing process.

[0004] Electrophoretic Display (EPD) technology, such as electronic ink, is favored for its low power consumption and paper-like reading experience, but its refresh rate is slow and it is not suitable for dynamic image display. Phase change display technology provides a faster refresh rate and a wider color gamut, making it more advantageous in dynamic content display.

[0005] Generally speaking, phase change display technology combines the advantages of fast response, high contrast, non-volatility, low energy consumption, and morphological flexibility, making it show unique application potential and market prospects in the competition with traditional display technologies such as LCD, OLED, and EPD.

[0006] For the phase change display technology based on the Fabry-Perot (FP) cavity, the thinner the phase change layer, generally the greater the optical contrast and the better the display performance. However, the thinner the phase change film, the more difficult it is to undergo a phase change. Especially for the same phase change material in grayscale adjustment, since the crystallization temperature of the same phase change material is the same, it is difficult to adjust the grayscale in a multi-layer design. Summary of the Invention

[0007] The present invention provides a gray-scale regulation display structure based on phase change materials, which is used to solve the defect that it is difficult to regulate gray scale using phase change materials in the prior art, and realizes multi-gradient gray scale adjustment using phase change materials.

[0008] The present invention provides a gray-scale regulation display structure based on phase change materials, comprising:

[0009] A phase change material layer, where the phase change material layer has at least two layers, and the crystallization temperature gradient of the phase change material layer is at least above 30 degrees Celsius;

[0010] A dielectric layer, with a dielectric layer on both the upper and lower sides of each phase change material layer, and the dielectric layer is used to change the crystallization temperature of the phase change material layer;

[0011] A thermal isolation layer, located between the phase change material layers;

[0012] An electrode layer, located on one or both sides of the dielectric layer, and used to electrically heat and drive the phase change material layer.

[0013] According to the gray-scale regulation display structure based on phase change materials provided by the present invention, the phase change material layer uses the same kind of phase change material, and at least one layer of the same kind of phase change material layer has a thickness less than 10 nm.

[0014] According to the gray-scale regulation display structure based on phase change materials provided by the present invention, the phase change material layer uses different kinds of phase change materials, and the phase change temperature difference between different phase change material layers is greater than 30 degrees Celsius.

[0015] According to the gray-scale regulation display structure based on phase change materials provided by the present invention, the thermal isolation layer is provided between adjacent two-phase change material layers;

[0016] In the electric heating drive, the temperatures on both sides of the thermal isolation layer are higher than the phase change temperature of the phase change material layer on one side of the thermal isolation layer;

[0017] The thermal isolation layer has the characteristic of being transparent.

[0018] According to the gray-scale regulation display structure based on phase change materials provided by the present invention, the phase change material used in the phase change material layer is a chalcogenide compound and its alloy, and the phase change material includes one or more of GST, GSST, IST, GeTe, SbTe, BiTe, InSb, InSe, GeSb, GaSb, GaSb, GeSbTe, AgInSbTe, InSbTe, AgSbTe, Ag2In4Sb76Te17 (AIST), SbSe, and SbS;

[0019] The atomic percentage in the chemical formula of the phase change material is variable and contains at least one dopant.

[0020] According to a grayscale regulation display structure based on a phase change material provided by the present invention, through the induction or other effects of the dielectric layer, the crystallization temperature of the phase change material layer is increased or decreased.

[0021] According to a grayscale regulation display structure based on a phase change material provided by the present invention, the phase change material layer includes a first phase change material layer and a second phase change material layer, the dielectric layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer, and the electrode layer includes a first metal layer, a second metal layer and a third metal layer;

[0022] The first metal layer, the first dielectric layer, the first phase change material layer, the second dielectric layer, the second metal layer, the third dielectric layer, the second phase change material layer and the third metal layer are arranged in sequence from bottom to top.

[0023] According to a grayscale regulation display structure based on a phase change material provided by the present invention, the first metal layer is a reflective layer, and the first metal layer and / or the second metal layer are used to drive the first phase change material layer to undergo a phase change;

[0024] The first dielectric layer and the second dielectric layer are used to change the crystallization temperature of the first phase change material layer;

[0025] The third metal layer and the third dielectric layer are used as a dielectric layer to change the crystallization temperature of the second phase change material layer, and the third metal layer is used to drive the second phase change material layer to undergo a phase change;

[0026] The third dielectric layer also serves as the thermal isolation layer.

[0027] According to a grayscale regulation display structure based on a phase change material provided by the present invention, the first metal layer is a metal that is transparent among Ag, W, Al, Pt and Zn and has a light absorption rate less than a preset threshold;

[0028] The second metal layer and the third metal layer are transparent conductive metals among ITO and INO.

[0029] According to a grayscale regulation display structure based on a phase change material provided by the present invention, the first dielectric layer or the second dielectric layer is a dielectric material among TiO2, TiN, SiO2 and Al2O3, and the thicknesses of the first dielectric layer and the second dielectric layer are respectively 5 nm to 500 nm, obtained according to an integer multiple of a quarter of the wavelength corresponding to the target display color of the grayscale regulation display structure plus or minus 10 nm;

[0030] The third dielectric layer is a dielectric material among Al2O3 and SiO2.

[0031] The gray-scale modulation display structure based on phase change materials provided by the present invention designs the display structure by using phase change materials and dielectric induction materials. When the dielectric material is combined with the phase change material, it affects the crystallization characteristics of the phase change material, enabling precise gray-scale modulation of the phase change material, capable of adjusting the gray scale of the phase change display device, applicable to most phase change materials, with a simple structure, not easily affected by the environment, easy to integrate, and can be designed by changing the crystallization temperature of the same phase change material. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0033] Figure 1 It is a schematic distribution diagram of the influence relationship between the thickness of the phase change display material GST and the interface materials of TiN and Al2O3 on its crystallization temperature in the gray-scale modulation display structure based on phase change materials provided by the present invention;

[0034] Figure 2 It is a schematic diagram of the phase change temperature test structure of two dielectric materials and a phase change material in the gray-scale modulation display structure based on phase change materials provided by the present invention;

[0035] Figure 3 It is a schematic distribution diagram of the crystalline and amorphous curves of the phase change material GST sandwiched by the dielectric material (ZnS)0.85(SiO)0.15 in the gray-scale modulation display structure based on phase change materials provided by the present invention;

[0036] Figure 4 It is a schematic diagram of the distribution of the gray-scale modulation display structure based on phase change materials provided by the present invention;

[0037] Figure 5 It is a schematic diagram of the optical structure reflectance of the gray-scale modulation display structure based on phase change materials provided by the present invention.

[0038] REFERENCE SIGNS:

[0039] 201, the first dielectric layer of the phase change temperature test structure; 202, the phase change material layer of the phase change temperature test structure; 203, the second dielectric layer of the phase change temperature test structure; 401, the first metal layer of the display structure; 402, the first dielectric layer of the display structure; 403, the first phase change material layer of the display structure; 404, the second dielectric layer of the display structure; 405, the second metal layer of the display structure; 406, the third dielectric layer of the display structure; 407, the second phase change material layer of the display structure; 408, the third metal layer of the display structure. Detailed implementation manners

[0040] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below with reference to the accompanying drawings in the present invention. Apparently, the described embodiments are some but not all of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present invention without making creative efforts shall fall within the protection scope of the present invention.

[0041] In the existing display technologies, for a phase change display structure composed of a broadband absorption structure and a narrowband absorption structure based on a dielectric layer and a metal material, the gray scale is mainly adjusted by adjusting the crystallization degree of the phase change material. However, it is very difficult to control the crystallization ratio, and the gray scale adjustment is unstable. Or different phase change material combinations with greatly different phase change temperatures are used for gray scale control, but the selection range of display materials is limited to very small due to different material combinations. Or the same phase change material is used for gray scale control by different driving voltages for different layers. However, since the crystallization temperature of the same phase change material is the same, it is very difficult to control the phase change of only one layer without affecting the phase change of other layers, which will generate great thermal crosstalk and will greatly hinder its further application. Therefore, it is of great practical significance to design a display technology for precise gray scale control of the same phase change material.

[0042] The following will be combined with Figures 1 to 5 Describe a gray scale control display structure based on a phase change material according to the present invention, including:

[0043] A phase change material layer, where the phase change material layer has at least two layers, and the crystallization temperature gradient of the phase change material layer is at least above 30 degrees Celsius;

[0044] A dielectric layer, with a dielectric layer on both the upper and lower sides of each phase change material layer, and the dielectric layer is used to change the crystallization temperature of the phase change material layer;

[0045] A thermal isolation layer, located between the phase change material layers;

[0046] An electrode layer, located on one or both sides of the dielectric layer, and used to electrically heat and drive the phase change material layer.

[0047] In this embodiment, different dielectric layers are used to affect the crystallization temperature of the phase change material layer. By selecting dielectric materials that can increase or decrease the crystallization temperature of the phase change material, display design is carried out on the phase change material to achieve multi-gradient gray scale adjustment.

[0048] Based on the characteristics that the thinner the phase change material is, the higher the temperature required for phase change, and that different dielectric layers will affect its phase change transition temperature, the display design is carried out. Since the thinner the phase change material is, the better its optical properties are, and the better the display effect before and after phase change, and its crystallization temperature is more affected by the dielectric material. Based on this, by selecting materials that can reduce its crystallization temperature, corresponding designs are carried out according to different degrees of reduction.

[0049] Figure 2 is a phase change temperature test structure, including a first dielectric layer 201, a phase change material layer 202, and a second dielectric layer 203 from bottom to top in sequence. In the phase change temperature test structure, two layers of dielectric materials sandwich the phase change material, and its phase change temperature is measured with the change of the thickness of the phase change material. Figure 1 and Figure 3 The curve graph in Figure 2 is tested based on

[0050] Figure 1 The red curve in is the curve graph of the phase change material sandwiched by TiN with the change of the thickness of the phase change material, and the black line is the curve graph of the phase change material sandwiched by Al2O3 with the change of the thickness of the phase change material. It can be seen that as the thickness of the phase change material decreases, the crystallization temperature of the phase change material will gradually increase, and the phase change material is greatly affected by the dielectric material.

[0051] Based on this, the property that the crystallization temperature of the phase change material is more affected by the dielectric material when it is thinner can be utilized. Moreover, the thinner the phase change material is, the better its performance before and after phase change in the display structure, and the phase change material is easy to fully crystallize. Add an insulating layer with better heat insulation performance between different phase change material layers to further avoid crosstalk during the crystallization process of the phase change layer in the phase change display process.

[0052] Generally speaking, this embodiment adopts a brand-new display structure design idea, and successfully develops a display technology that can accurately control its gray level to meet the requirements of gray level control in the reflective display market and other markets. This technical strategy overcomes the inherent limitations of the existing structure, has great significance in technological progress, and opens up new possibilities for the further development of phase change display technology.

[0053] In this embodiment, the display structure is designed by using the phase change material and the dielectric induction material. When the dielectric material is combined with the phase change material, it affects the crystallization characteristics of the phase change material, can accurately control the gray level of the phase change material, can adjust the gray level of the phase change display device, is applicable to most phase change materials, has a simple structure, is not easily affected by the environment, is easy to integrate, and can be designed by changing the crystallization temperature of the same phase change material.

[0054] Based on the above embodiments, in this embodiment, the phase change material layer uses the same kind of phase change material, and the thickness of at least one layer in the same kind of phase change material layer is less than 10 nm.

[0055] If the same kind of phase change material is used in multiple phase change material layers in the display structure, then the thickness of at least one layer is less than 10 nm, preferably less than or equal to 6 nm.

[0056] When the thickness of the phase change material decreases to less than 10 nm, the phase change temperature will increase. This is because the thinner the film, the more difficult it is for the phase change material to nucleate longitudinally, and the role of the coating layer surrounding the phase change material becomes increasingly important.

[0057] Taking GST as an example, it is crucial to ensure that the volume of the phase change material GST is sufficient to maintain vacancies and stability in the cubic phase through resonant bonding. Only a 2-nanometer-thick film can crystallize, which is close to the minimum thickness at which resonant bonding can stabilize the cubic phase. Compressive stress increases the energy required for the transformation of Ge atoms from tetrahedral to octahedral coordination, thereby increasing the crystallization temperature. Materials such as TiN and Al2O3 tend to cause a sharp increase in the crystallization temperature, while (ZnS)0.85(SiO)0.15 with lower stress has little effect on the crystallization temperature, and this point can be utilized for corresponding designs.

[0058] Based on the above embodiments, in this embodiment, the phase change material layer uses different kinds of phase change materials, and the phase change temperature difference between different phase change material layers is greater than 30 degrees Celsius.

[0059] Based on the above embodiments, in this embodiment, the thermal isolation layer is provided between adjacent two-phase change material layers;

[0060] In the electrothermal drive, the temperatures on both sides of the thermal isolation layer are higher than the phase change temperature of the phase change material layer on one side of the thermal isolation layer;

[0061] The thermal isolation layer has the characteristic of being transparent.

[0062] Adding a thermal isolation layer between different phase change material layers, the thermal insulation material used is transparent and has a low light absorption rate.

[0063] Based on the above embodiments, in this embodiment, the phase change material used in the phase change material layer is a chalcogenide compound and its alloy, and the phase change material includes one or more of GST, GSST, IST, GeTe, SbTe, BiTe, InSb, InSe, GeSb, GaSb, GaSb, GeSbTe, AgInSbTe, InSbTe, AgSbTe, Ag2In4Sb76Te17 (AIST), SbSe, and SbS;

[0064] The atomic percentages in the chemical formula of the phase change material are variable and include at least one dopant, such as C and N.

[0065] Based on the above embodiments, in this embodiment, the crystallization temperature of the phase change material layer is increased or decreased through the induction or other effects of the dielectric layer.

[0066] The effects of the dielectric materials used on the thin-film phase change material are divided into two categories: decreasing the phase change temperature or increasing the phase change temperature. By combining dielectric materials, a large temperature gradient of the phase change material is achieved, and this design can accurately control its gray scale.

[0067] Based on the above embodiments, as Figure 4 shown, in this embodiment, the phase change material layer includes a first phase change material layer 403 and a second phase change material layer 407, the dielectric layer includes a first dielectric layer 402, a second dielectric layer 404, and a third dielectric layer 406, and the electrode layer includes a first metal layer 401, a second metal layer 405, and a third metal layer 408;

[0068] The first metal layer 401, the first dielectric layer 402, the first phase change material layer 403, the second dielectric layer 404, the second metal layer 405, the third dielectric layer 406, the second phase change material layer 407, and the third metal layer 408 are arranged in sequence from bottom to top.

[0069] Based on the above embodiments, in this embodiment, the first metal layer 401 is a reflective layer, and the first metal layer 401 and / or the second metal layer 405 are used to drive the first phase change material layer 403 to undergo a phase change;

[0070] The first dielectric layer 402 and the second dielectric layer 404 are used to change the crystallization temperature of the first phase change material layer 403;

[0071] The third metal layer 408, as a dielectric layer together with the third dielectric layer 406, is used to change the crystallization temperature of the second phase change material layer 407, and the third metal layer 408 is used to drive the second phase change material layer 407 to undergo a phase change;

[0072] The third dielectric layer 406 also serves as the thermal isolation layer.

[0073] The first metal layer 401 can use metal Ag. Its main functions are to serve as a reflective layer and provide heat to drive the first phase change material layer 403 to undergo a phase change.

[0074] The first dielectric layer 402 can use the dielectric TiN. The first phase change material layer 403 can use the phase change material GST. The second dielectric layer 404 can use the dielectric TiN, which mainly changes the crystallization temperature of the first phase change material layer 403 together with the first dielectric layer 402.

[0075] The second metal layer 405 can be ITO, providing the dielectric layer of the FP cavity. The third dielectric layer 406 can be Al2O3, which mainly changes the crystallization temperature of the second phase change material layer 407 film together with the third metal layer 408.

[0076] The second phase change material layer 407 can use the phase change material GST. The third metal layer 408 can be ITO. The main function of this layer is to provide heat drive and also serve as the dielectric layer of the FP cavity.

[0077] This design mainly utilizes the TiN of the first dielectric layer 402 and the second dielectric layer 404 to change the phase change temperature of GST. At the same time, it is also designed according to the change of the temperature of the phase change material layer by Al2O3. This enables the same phase change material to have different temperature gradients, which can control the phase change of the phase change materials in different layers, thereby regulating the gray scale of the display device. At the same time, Al2O3 has the function of heat insulation, which avoids thermal crosstalk between the phase change material layers during phase change.

[0078] The phase change materials of the first phase change material layer 403 and the second phase change material layer 407 can be converted between the crystalline state and the amorphous state under electrical stimulation or laser stimulation, thereby changing the transmittance and reflectivity of the phase change layer.

[0079] Metal ITO is deposited on the top layer of the second phase change material layer 407. The second phase change material layer 407 can control the crystallization state of the phase change material by applying a voltage on the ITO layer of the third metal layer 408. The first phase change material layer 403 can control the crystallization state of the phase change material by applying a voltage on the first metal layer 401 Ag or the second metal layer 405 ITO.

[0080] Specifically, applying a medium-strength pulsed voltage or laser pulse to the first phase change material layer 403 or the second phase change material layer 407 causes the temperature of the phase change material to rise to a temperature range above the crystallization temperature and below the melting temperature under the action of the current or laser pulse, and maintain for a certain time. At this time, the lattice is arranged orderly to form a crystalline state, realizing the transformation from amorphous to crystalline.

[0081] Applying a short and strong voltage or laser pulse to the first phase change material layer 403 or the second phase change material layer 407 causes the temperature of the phase change material to rise above the melting temperature, destroying the long-range order of the crystalline state. The very short falling edge of the pulse causes the phase change material to be rapidly cooled below the crystallization temperature, fixing the phase change material in the amorphous state, realizing the transformation from the crystalline state to the amorphous state. The gray scale of the phase change material is regulated by the changes in the transmittance and reflectivity of the phase change materials in the first phase change material layer 403 or the second phase change material layer 407 during the mutual conversion between the amorphous state and the crystalline state.

[0082] Based on the above embodiments, in this embodiment, the first metal layer 401 is a metal such as Ag, W, Al, Pt, and Zn that is transparent and has a light absorption rate less than a preset threshold, and its thickness is greater than 50 nm, so that light cannot pass through;

[0083] The second metal layer 405 and the third metal layer 408 are transparent conductive metals such as ITO and INO.

[0084] Based on the above embodiments, in this embodiment, the first dielectric layer 402 or the second dielectric layer 403 affects the temperature of the thin phase change layer. When designing, there must be a sufficiently large temperature gradient between different layers of phase change materials. Dielectric materials such as TiO2, TiN, and Al2O3 can be used. The thicknesses of the first dielectric layer and the second dielectric layer are respectively 5 nm to 500 nm, and are obtained as an integer multiple of one-fourth of the wavelength corresponding to the color to be displayed by the grayscale modulation display structure ±10 nm;

[0085] The third dielectric layer 406 mainly plays a heat insulation role, and dielectric materials such as Al2O3 and SiO2 can be used.

[0086] Figure 5 is Figure 4 A spectral distribution of a combination in the shown structure. Among them, CC means that both the first phase change material layer and the second phase change material layer are in the crystalline state, AC means that the first phase change material layer is in the amorphous state and the second phase change material layer is in the crystalline state, AA means that both the first phase change material layer and the second phase change material layer are in the amorphous state, and CA means that the first phase change material layer is in the crystalline state and the second phase change material layer is in the amorphous state. Preferably, the first metal layer 401 is Ag, with a thickness of 100 nm, the thickness of the first dielectric layer 402 is 20 nm, the thickness of the first phase change material layer 403 is 4 nm, the thickness of the second dielectric layer 404 is 20 nm, the thickness of the second metal layer 405 is 210 nm, the thickness of the third dielectric layer 406 is 10 nm, the thickness of the second phase change material layer 407 is 4 nm, and the thickness of the third metal layer 408 is 10 nm. From Figure 5 it can be seen that when the phase change layer is in different states, its display is also different.

[0087] Through Figure 1 it can be seen that the phase change material GST is sandwiched by the dielectric TiN on both sides. When it is 4 nm, its phase change temperature is about 225 °C. The phase change material GST is sandwiched by the dielectric Al2O3 on both sides. When it is 4 nm, its phase change temperature is about 350 °C, and the temperature difference is about 100 °C. This gradient can be used for the design of phase change display.

[0088] Similarly, from Figure 3It can be seen that the GST sandwiched by (ZnS)0.85(SiO)0.15 has an impact on its temperature, reducing the phase transition temperature. Using this property, a gradient design for phase change display can be carried out. Furthermore, gray-scale control of the display device can be achieved.

[0089] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A grayscale control display structure based on phase change material, characterized in that: include: A phase change material layer, wherein the phase change material layer comprises at least two layers, and the crystallization temperature gradient of the phase change material layer is at least above 30 degrees Celsius; A dielectric layer, wherein each phase change material layer has a dielectric layer on both sides thereof, and the dielectric layer is used to change the crystallization temperature of the phase change material layer; A thermal isolation layer, located between the phase change material layers; An electrode layer, located on one side or both sides of the dielectric layer, and used to electrically heat and drive the phase change material layer; When the phase change material layers use the same phase change material, at least one layer of the same phase change material layer has a thickness of less than 10 nm; When the phase change material layers use different types of phase change materials, the phase change temperature difference between different phase change material layers is greater than 30 degrees Celsius.

2. The grayscale control display structure based on phase change material according to claim 1, characterized in that: The thermal isolation layer is provided between two adjacent phase change material layers; In the electric heating drive, the temperature on both sides of the thermal isolation layer is greater than the phase change temperature of the phase change material layer on one side of the thermal isolation layer; The thermal insulation layer has a transparent property.

3. The grayscale control display structure based on phase change material according to claim 1, characterized in that: The phase change material used in the phase change material layer is a chalcogenide compound and its alloy. The phase change material includes GST, GSST, IST, GeTe, SbTe, BiTe, InSb, InSe, GeSb, GaSb, GaSb, GeSbTe, AgInSbTe, InSbTe, AgSbTe, Ag2In4Sb 76 Te 17 (AIST), SbSe and SbS; The phase change material has a chemical formula having variable atomic percentages and includes at least one dopant.

4. The grayscale control display structure based on phase change material according to claim 1, characterized in that: The crystallization temperature of the phase change material layer is increased or decreased through the induction or other effects of the dielectric layer.

5. The grayscale control display structure based on phase change material according to claim 1, characterized in that: The phase change material layer includes a first phase change material layer and a second phase change material layer, the dielectric layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer, and the electrode layer includes a first metal layer, a second metal layer and a third metal layer; The first metal layer, the first dielectric layer, the first phase-change material layer, the second dielectric layer, the second metal layer, the third dielectric layer, the second phase-change material layer and the third metal layer are arranged in sequence from bottom to top.

6. The grayscale control display structure based on phase change material according to claim 5, characterized in that: The first metal layer is a reflective layer, and the first metal layer and / or the second metal layer are used to drive the first phase change material layer to undergo phase change; The first dielectric layer and the second dielectric layer are used to change the crystallization temperature of the first phase change material layer; The third metal layer is used as a dielectric layer and the third dielectric layer is used to change the crystallization temperature of the second phase change material layer, and the third metal layer is used to drive the second phase change material layer to undergo phase change; The third dielectric layer also serves as the thermal isolation layer.

7. The grayscale control display structure based on phase change material according to claim 5, characterized in that: The first metal layer is a transparent metal among Ag, W, Al, Pt and Zn, and its light absorption rate is less than a preset threshold; The second metal layer and the third metal layer are transparent conductive metals selected from ITO and INO.

8. The grayscale control display structure based on phase change material according to claim 5, characterized in that: The first dielectric layer or the second dielectric layer is a dielectric material selected from TiO2, SiO2, TiN and Al2O3, and the thickness of the first dielectric layer and the second dielectric layer are respectively 5nm to 500nm, obtained by an integer multiple of one quarter of the wavelength corresponding to the target display color of the grayscale control display structure ±10nm; The third dielectric layer is a dielectric material selected from Al2O3, SiO2, TiN and TiO2.

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