Wafer processing equipment and processing method, reaction chamber, controller, and storage medium

Abstract

The present disclosure relates to the field of semiconductor technology, and provides wafer processing equipment and processing methods, a reaction chamber, a controller, and a storage medium. The wafer processing equipment includes a reaction chamber, a cooling chamber, and a transfer device. The inner lining of the reaction chamber is provided with a transfer avoidance structure, and the cooling chamber is provided with a first shielding ring bearing device. The transfer device includes a transfer robot. When loading and unloading the shield ring, the transfer robot is used to allow the shield ring to enter from the first inlet and outlet of the reaction chamber, and the position is adjusted in the transfer avoidance structure to load the shield ring onto the inner lining, or the shield ring is removed from the installation position of the inner lining and moved out through the first inlet and outlet of the reaction chamber. The transfer avoidance structure provides adjustment space for the transfer robot to enter and adjust the position. Without opening the top cover of the reaction chamber, the transfer robot is automatically controlled to complete the loading and unloading of the shield ring. After the loading and unloading is completed, there is no need to restart the machine, which saves labor costs and time and improves overall efficiency.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a wafer processing device and method, a reaction chamber, a controller, and a storage medium. Background Art

[0002] Chemical vapor deposition (CVD) is a process that heats one or more gases (called precursors) to decompose them, produce reaction products, and deposit them on the surface of the semiconductor to form the desired thin film. Among them, thermal chemical vapor deposition (TCVD) and plasma enhanced chemical vapor deposition (PECVD) are the two most common process methods.

[0003] Generally, when implementing a CVD process, a reaction chamber equipped with a substrate support configured to carry a wafer is provided. In the reaction chamber, a transfer robot is used to transfer the wafer into or out of the chamber, and the wafer is supported by a wafer support during the process. Precursor gas is transported into the reaction chamber through a gas inlet pipe located above the wafer, and the wafer is heated to a process temperature generally in the range of about 250°C to 650°C. The precursor gas reacts on the heated wafer surface, deposits a thin layer on the wafer surface and forms volatile by-product gases, which are removed through the chamber exhaust system. In the TCVD process, a heater can be used to heat the wafer. In the PECVD process, one or more RF electrodes are set to provide energy to the gas to form a plasma, and the plasma provides heat for activating the precursor and forming a thin film layer.

[0004] However, the edge of the wafer is generally inclined, so the material deposited at the edge of the wafer will peel off or fall off in the subsequent process, forming unwelcome particle contamination. To avoid the above problems, a shadow ring is used in the related art. The shadow ring is a ring-shaped structure. When in use, the shadow ring is used to cover the wafer in a manner concentric with the wafer to shield the edge of the wafer from contact with the process gas and deposition.

[0005] In the related art, when loading and unloading the shielding ring, the processing chamber must be opened for operation, which will destroy the atmosphere in the chamber. After loading and unloading, the machine must be restarted, which has a great adverse effect on the consistency of the environmental parameters before and after the chamber, and will cause interruptions and discontinuities in the process flow, consuming a lot of time and resulting in low efficiency. In addition, the placement and removal of the shielding ring may require manual operation by an operator, and the degree of automation is low. Summary of the invention

[0006] In view of the above-mentioned shortcomings of the related art, the purpose of the present disclosure is to provide a wafer processing device and processing method, a reaction chamber, a controller, and a storage medium to solve various problems in the related art.

[0007] A first aspect of the present disclosure provides a wafer processing device, comprising:

[0008] A reaction chamber, comprising a reaction chamber, a wafer carrier, and an inner liner; the reaction chamber is provided with a first material inlet and outlet; the wafer carrier is arranged in the reaction chamber for carrying a wafer; the inner liner is arranged at the periphery of the wafer carrier, and has a shielding ring bearing surface higher than the wafer; a transfer avoidance structure is provided at the top of the inner liner corresponding to the first material inlet and outlet, and the transfer avoidance structure has a transfer avoidance space for accommodating a transfer robot and allowing the transfer robot to move;

[0009] A cooling chamber, located beside the reaction chamber, comprises a cooling cavity, at least one wafer carrier, and at least one first shielding ring carrier, wherein the cooling cavity is provided with a second inlet and outlet; the at least one wafer carrier is arranged in the cooling cavity for carrying wafers; the at least one first shielding ring carrier is arranged in the cooling cavity for carrying shielding rings;

[0010] A transfer device, comprising a driving unit and a transfer robot controlled by the driving unit, for transferring a wafer that has completed a reaction process in a reaction chamber from the reaction chamber to the cooling chamber and for transferring a shielding ring between the reaction chamber and the cooling chamber;

[0011] When the transfer robot is used to load the shielding ring, the transfer robot removes the shielding ring to be loaded from the first shielding ring carrying device of the cooling chamber and transfers the shielding ring to the reaction chamber; the shielding ring is sent into the reaction chamber through the first inlet and outlet of the reaction chamber and the shielding ring is placed directly above the wafer carried by the wafer carrier; the transfer robot is lowered so that the transfer robot falls into the transfer avoidance structure of the liner and the shielding ring falls onto the shielding ring carrying surface of the liner; the transfer robot in the transfer avoidance structure is lowered by an avoidance gap so that the transfer robot is separated from the shielding ring ; moving the transfer robot out of the transfer avoidance structure through the first inlet and outlet; and, when using the transfer robot to unload the shielding ring, the transfer robot enters the transfer avoidance structure through the first inlet and outlet of the reaction chamber and is placed directly below the shielding ring carried by the liner; raising the transfer robot in the transfer avoidance structure by an avoidance gap, and during the raising process, the transfer robot supports the shielding ring and separates the shielding ring from the liner; moving the transfer robot and the shielding ring it carries out through the first inlet and outlet of the reaction chamber and into the first shielding ring carrying device in the cooling chamber.

[0012] In some examples of the first aspect, the transfer avoidance structure is a groove structure, the width of the groove structure is adapted to the transfer robot, and the height of the groove structure is greater than or equal to the avoidance gap.

[0013] In some examples of the first aspect, a positioning pin is provided at the bottom of the shielding ring, a positioning hole corresponding to the positioning pin is provided on the shielding ring bearing surface of the liner, and a positioning hole corresponding to the positioning pin is provided on the first shielding ring bearing device; or, a positioning hole is provided at the bottom of the shielding ring, a positioning pin corresponding to the positioning hole is provided on the shielding ring bearing surface of the liner, and a positioning pin corresponding to the positioning pin is provided on the first shielding ring bearing device.

[0014] In some examples of the first aspect, the transfer robot is provided with a wafer alignment structure corresponding to the wafer and a shield ring alignment structure corresponding to the shield ring.

[0015] A second aspect of the present disclosure provides a wafer processing method, which is applied to the wafer processing device as described above, and the wafer processing method comprises the following steps:

[0016] Based on the shield ring loading instruction, the driving unit in the transfer device controls the transfer robot to remove the shield ring to be loaded from the first shield ring carrying device in the cooling chamber and transfer the shield ring to the reaction chamber; send it into the reaction chamber through the first inlet and outlet of the reaction chamber and position it directly above the wafer carried by the wafer carrier; lower the transfer robot so that the transfer robot falls into the transfer avoidance structure and the shield ring falls onto the shield ring carrying surface of the lining; lower the transfer robot in the transfer avoidance structure by an avoidance gap so that the transfer robot is separated from the shield ring; move the transfer robot out of the transfer avoidance structure through the first inlet and outlet; and,

[0017] Based on the shielding ring unloading instruction, the driving unit in the transfer device controls the transfer robot to enter the transfer avoidance structure through the first inlet and outlet of the reaction chamber and be placed directly below the shielding ring carried by the liner; the transfer robot in the transfer avoidance structure is raised by an avoidance gap, and during the rising process, the transfer robot supports the shielding ring and separates the shielding ring from the liner; the transfer robot and the shielding ring it carries are moved out through the first inlet and outlet of the reaction chamber and moved onto the first shielding ring supporting device in the cooling chamber.

[0018] A third aspect of the present disclosure provides a wafer processing device, comprising:

[0019] A reaction chamber, comprising a reaction chamber, a wafer carrier, and an inner liner; the reaction chamber is provided with a first material inlet and outlet; the wafer carrier is arranged in the reaction chamber for carrying a wafer; the inner liner is arranged at the periphery of the wafer carrier, and has a shielding ring bearing surface higher than the wafer; a transfer avoidance structure is provided at the top of the inner liner corresponding to the first material inlet and outlet, and the transfer avoidance structure has a transfer avoidance space for accommodating a transfer robot and allowing the transfer robot to move;

[0020] A shielding ring bearing chamber is located beside the reaction chamber, comprising a bearing cavity and at least one second shielding ring bearing device, wherein the bearing cavity is provided with a third material inlet and outlet; the at least one second shielding ring bearing device is arranged in the bearing cavity for bearing the shielding ring;

[0021] A transfer device, comprising a driving unit and a transfer robot controlled by the driving unit, for transferring the shield ring between the reaction chamber and the shield ring carrying chamber;

[0022] When the transfer robot is used to load the shield ring, the transfer robot removes the shield ring to be loaded from the second shield ring carrying device of the shield ring carrying chamber and transfers the shield ring to the reaction chamber; the shield ring is sent into the reaction chamber through the first inlet and outlet of the reaction chamber and the shield ring is placed directly above the wafer carried by the wafer carrier; the transfer robot is lowered so that the transfer robot falls into the transfer avoidance structure of the liner and the shield ring falls onto the shield ring carrying surface of the liner; the transfer robot in the transfer avoidance structure is lowered by an avoidance gap so that the transfer robot is separated from the shield ring ; moving the transfer robot out of the transfer avoidance structure through the first inlet and outlet; and, when using the transfer robot to unload the shield ring, the transfer robot enters the transfer avoidance structure through the first inlet and outlet of the reaction chamber and is placed directly below the shield ring carried by the liner; raising the transfer robot in the transfer avoidance structure by an avoidance gap, and during the rising process, the transfer robot supports the shield ring and separates the shield ring from the liner; moving the transfer robot and the shield ring it carries out through the first inlet and outlet of the reaction chamber and into the second shield ring carrying device in the shield ring carrying chamber.

[0023] In some examples of the third aspect, the transfer avoidance structure is a groove structure, the width of the groove structure is adapted to the transfer robot, and the height of the groove structure is greater than or equal to the avoidance gap.

[0024] In some examples of the third aspect, a positioning pin is provided at the bottom of the shielding ring, a positioning hole corresponding to the positioning pin is provided on the shielding ring bearing surface of the liner, and a positioning hole corresponding to the positioning pin is provided on the second shielding ring bearing device; or, a positioning hole is provided at the bottom of the shielding ring, a positioning pin corresponding to the positioning hole is provided on the shielding ring bearing surface of the liner, and a positioning pin corresponding to the positioning pin is provided on the second shielding ring bearing device.

[0025] In some examples of the third aspect, the transfer robot is provided with a shield ring alignment structure corresponding to the shield ring.

[0026] A fourth aspect of the present disclosure provides a wafer processing method, which is applied to the wafer processing device as described above, and the wafer processing method comprises the following steps:

[0027] Based on the shield ring loading instruction, the driving unit in the transfer device controls the transfer robot to remove the shield ring to be loaded from the second shield ring carrying device in the shield ring carrying chamber and transfer the shield ring to the reaction chamber; send it into the reaction chamber through the first inlet and outlet of the reaction chamber and be located directly above the wafer carried by the wafer carrier; lower the transfer robot so that the transfer robot falls into the transfer avoidance structure and the shield ring falls onto the shield ring carrying surface of the lining; lower the transfer robot in the transfer avoidance structure by an avoidance gap so that the transfer robot is separated from the shield ring; move the transfer robot out of the transfer avoidance structure through the first inlet and outlet; and,

[0028] Based on the shield ring unloading instruction, the driving unit in the transfer device controls the transfer robot to enter the transfer avoidance structure through the first inlet and outlet of the reaction chamber and be placed directly below the shield ring carried by the liner; the transfer robot in the transfer avoidance structure is raised by an avoidance gap, and during the rising process, the transfer robot supports the shield ring and separates the shield ring from the liner; the transfer robot and the shield ring it carries are moved out through the first inlet and outlet of the reaction chamber and moved into the second shield ring carrying device in the shield ring carrying chamber.

[0029] A fifth aspect of the present disclosure provides a reaction chamber, comprising:

[0030] The reaction chamber has a containing space; the reaction chamber is provided with an inlet and outlet;

[0031] A wafer carrier, disposed in the accommodating space, and used for carrying the wafer;

[0032] An inner liner is arranged on the periphery of the wafer stage and the wafer carried by the wafer stage; the inner liner has a shielding ring bearing surface, and the shielding ring bearing surface is higher than the wafer carried by the wafer stage; a transfer avoidance structure corresponding to the transfer robot is arranged at the top of the inner liner corresponding to the inlet and outlet;

[0033] When the shielding ring is loaded by the transfer robot, the transfer robot delivers the shielding ring to be loaded into the reaction chamber through the inlet and outlet and places it directly above the wafer; the transfer robot is lowered so that the transfer robot falls into the transfer avoidance structure and the shielding ring falls onto the shielding ring bearing surface of the liner; the transfer robot in the transfer avoidance structure is lowered by an avoidance gap so that the transfer robot is separated from the shielding ring; the transfer robot is removed from the transfer avoidance structure and, when using the transfer robot to unload the shielding ring, the transfer robot is introduced into the transfer avoidance structure through the first material inlet and outlet of the reaction chamber and is located directly below the shielding ring carried by the liner; the transfer robot in the transfer avoidance structure is raised by an avoidance gap, and during the rising process, the transfer robot supports the shielding ring and separates the shielding ring from the liner; the transfer robot and the shielding ring it carries are moved out through the material inlet and outlet of the reaction chamber.

[0034] In certain examples of the fifth aspect, the transfer avoidance structure is a groove structure, the width of the groove structure is adapted to the transfer robot, and the height of the groove structure is greater than or equal to the avoidance gap.

[0035] In certain examples of the fifth aspect, a positioning pin is provided at the bottom of the shielding ring, and a positioning hole corresponding to the positioning pin is provided on the shielding ring bearing surface of the liner; or, a positioning hole is provided at the bottom of the shielding ring, and a positioning pin corresponding to the positioning hole is provided on the shielding ring bearing surface of the liner.

[0036] A sixth aspect of the present disclosure provides a controller, comprising: a processor; and a memory storing a computer program; wherein the computer program executes the wafer processing method as described above when executed by the processor.

[0037] A seventh aspect of the present disclosure provides a computer-readable storage medium storing a computer program, wherein the computer program, when executed, executes the wafer processing method as described above.

[0038] As described above, the embodiments of the present disclosure provide a wafer processing equipment and processing method, a reaction chamber, a controller, and a storage medium, wherein the wafer processing equipment includes a reaction chamber, a cooling chamber, and a transfer device, wherein the reaction chamber includes a reaction cavity, a wafer carrier, and an inner lining, wherein a transfer avoidance structure is provided at the top of the inner lining corresponding to the first material inlet and outlet, wherein the transfer avoidance structure has a transfer avoidance space for accommodating a transfer robot and enabling the transfer robot to move; the cooling chamber includes a cooling cavity, at least one wafer carrier for carrying wafers, and at least one first shielding ring carrier for carrying a shielding ring; the transfer device includes a drive unit and a transfer robot controlled by the drive unit. When the wafer processing equipment provided by the embodiment of the present disclosure is applied, when loading and unloading the shield ring, the shield ring to be loaded is removed from the first shield ring supporting device of the cooling chamber by a transfer robot, and then enters from the first inlet and outlet of the reaction chamber, and the shield ring is loaded to the installation position of the liner by adjusting the position in the transfer avoidance structure. The shield ring to be unloaded is removed from the installation position of the liner by a transfer robot, and is moved out through the first inlet and outlet of the reaction chamber and into the first shield ring supporting device in the cooling chamber by adjusting the position in the transfer avoidance structure. Compared with the related art, by providing a transfer avoidance structure in the inner lining of the reaction chamber, adjustment space can be provided for the transfer robot to enter and adjust the position, which can avoid interference with other components. Therefore, the shielding ring can be loaded and unloaded by the existing transfer robot without opening the top cover of the reaction chamber. The whole process is automated, and in particular, it will not damage the overall atmosphere in the cavity, ensuring the consistency of the environmental parameters before and after the cavity. After the loading and unloading is completed, the process of re-starting the machine is eliminated, ensuring the continuity of the wafer processing process, saving labor costs and time, and greatly improving the overall efficiency. In addition, at least one first shielding ring carrying device is arranged in the cooling chamber to carry the shielding ring, thereby opening up a structure for storing the shielding ring in the overall wafer processing equipment, creating favorable conditions for loading and unloading the shielding ring without damaging the atmosphere of the reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 Shown is a schematic diagram of a top view of the structure of a wafer processing device in one embodiment of the present invention.

[0040] Figure 2 Display as Figure 1 A schematic diagram of the side view of the middle reaction chamber in one embodiment.

[0041] Figure 3 Display as Figure 1 A schematic side view of the structure of the middle cooling chamber in one embodiment.

[0042] Figure 4 Display as Figure 3Schematic diagram of the top view structure in the AA direction.

[0043] Figure 5 Shown is a schematic diagram of a top view of the structure of a transfer robot in one embodiment.

[0044] Figure 6 Shown is a schematic diagram of the module structure of the controller in one embodiment of the present disclosure.

[0045] Figure 7 FIG. 1 is a flow chart of a shadow ring loading operation performed in an embodiment of the wafer processing method disclosed herein.

[0046] Figure 8 It is a schematic flow chart of implementing the unloading operation of the shadow ring in one embodiment of the wafer processing method disclosed in the present invention.

[0047] Fig. 9 Shown is a schematic diagram of a top view of the structure of the wafer processing equipment disclosed in another embodiment.

[0048] Fig.10 Display as Fig. 9 A schematic diagram of the side view of the reaction chamber in another embodiment.

[0049] Fig.11 Display as Fig. 9 A schematic diagram of the side view of the middle shielding ring chamber in one embodiment.

[0050] Fig.12 Display as Fig.11 Schematic diagram of the top view of the structure in the middle BB direction.

[0051] Fig.13 The flowchart is a schematic diagram of a shadow ring loading operation implemented in another embodiment of the wafer processing method disclosed herein.

[0052] Fig.14 The flowchart of the wafer processing method disclosed herein is a schematic diagram of implementing an unloading operation of a shadow ring in another embodiment.

[0053] Reference numerals:

[0054] 1. reaction chamber; 11. reaction chamber; 111. first inlet and outlet; 113. first slit valve; 13. wafer stage; 131. edge ring; 15. lining; 150. wafer channel; 151. transfer avoidance structure; 171. nozzle or nozzle assembly; 173. piping; 175. gas source;

[0055] 3. Cooling chamber; 31. Cooling cavity; 311. Second inlet and outlet; 313. Second slit valve; 33. Wafer bearing device; 35. First shielding ring bearing device; 351. First supporting fence;

[0056] 5. Transfer device; 50. Transfer chamber; 51. Drive unit; 53. Transfer robot; 531. Wafer alignment structure; 533. Shielding ring alignment structure;

[0057] 6. Shielding ring bearing chamber; 61. Bearing cavity; 611. Third inlet and outlet; 613. Third slit valve; 63. Second shielding ring bearing device; 631. Second supporting fence;

[0058] 91. Processor; 93. Memory; 92. Bus;

[0059] 100. Wafer;

[0060] 200. Shielding ring; 201. Positioning pin. DETAILED DESCRIPTION

[0061] The following is an explanation of the embodiments of the present disclosure by specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed by the present disclosure. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in the present disclosure can also be modified or changed in various ways according to different viewpoints and application modules without departing from the spirit of the present disclosure. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0062] The following is a detailed description of the embodiments of the present disclosure with reference to the accompanying drawings so that those skilled in the art can easily implement the present disclosure. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0063] In the representations of the present disclosure, the reference terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" and the like mean that the specific features, structures, materials or characteristics represented in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials or characteristics represented may be combined in any one or a group of embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples represented in the present disclosure and the features of different embodiments or examples, unless they are mutually contradictory.

[0064] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the representation of the present disclosure, "a group" means two or more, unless otherwise clearly and specifically defined.

[0065] In order to clearly describe the present disclosure, components not related to the description are omitted, and the same reference numerals are given to the same or similar components throughout the specification.

[0066] Throughout the specification, when a device is said to be "connected" to another device, this includes not only the case of "direct connection" but also the case of "indirect connection" by placing other elements therebetween. In addition, when a device is said to "include" a certain component, unless otherwise stated, it does not exclude other components, but means that other components may be included.

[0067] Although the terms first, second, etc. are used to represent various elements in this article in some examples, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, the first interface and the second interface, etc. are represented. Moreover, as used in this article, the singular forms "one", "one" and "the" are intended to also include plural forms, unless there is an opposite indication in the context. It should be further understood that the terms "comprising" and "including" indicate that there are the described features, steps, operations, elements, modules, projects, kinds, and / or groups, but do not exclude the existence, occurrence or addition of one or a group of other features, steps, operations, elements, modules, projects, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Therefore, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". Only when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way, will there be an exception to this definition.

[0068] The technical terms used herein are only used to refer to specific embodiments and are not intended to limit the present disclosure. The singular form used herein also includes the plural form unless the sentence clearly indicates the contrary meaning. The meaning of "including" used in the specification is to specify specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0069] Although not defined differently, all terms, including technical and scientific terms used herein, have the same meaning as those generally understood by those skilled in the art to which the present disclosure belongs. Terms defined in commonly used dictionaries are additionally interpreted as having meanings consistent with relevant technical literature and the message of the present disclosure, and shall not be overly interpreted as ideal or very formal meanings unless defined.

[0070] In the related technologies involving wafer deposition of semiconductor materials, when loading and unloading the shield ring, the processing chamber must be opened for operation, which will destroy the atmosphere in the chamber. After the installation is completed, the machine must be restarted, which has a great adverse effect on the consistency of the environmental parameters before and after the chamber, and will cause interruptions and discontinuities in the process flow, consuming a lot of time and resulting in low efficiency. In addition, the placement and removal of the shield ring may require manual operation by the operator, and the degree of automation is low.

[0071] In view of this, the embodiments of the present disclosure provide a wafer processing equipment and processing method, a reaction chamber, a controller, and a storage medium, which can realize the loading and unloading operations of the shielding ring by controlling the transfer robot through automatic operation without opening the top cover of the reaction chamber, and will not damage the overall atmosphere environment in the cavity, thereby ensuring the consistency of the environmental parameters before and after the cavity, and eliminating the process of resetting the machine after the loading and unloading is completed, thereby ensuring the continuity of the wafer processing process, saving labor costs and time, and greatly improving the overall efficiency.

[0072] See also Figure 1 , which is a schematic diagram of a top view of the structure of the wafer processing equipment disclosed in one embodiment.

[0073] like Figure 1 As shown, the wafer processing equipment in this embodiment may include: a reaction chamber 1, a cooling chamber 3, and a transfer device 5. Among them, the reaction chamber 1 and the cooling chamber 3 are adjacently arranged through a conveying chamber 50, and the transfer device 5 is arranged in the conveying chamber 50. The transfer device 5 may include a driving unit 51 and a transfer robot 53 controlled by the driving unit 51. By means of the transfer robot 53, the wafer that has completed the reaction treatment in the reaction chamber 1 can be transferred from the reaction chamber 1 to the cooling chamber 3, and the shielding ring can be transferred between the reaction chamber 1 and the cooling chamber 3. In fact, the wafer processing equipment in this embodiment may also include a storage chamber for storing wafer boxes, on which the wafer boxes are loaded with wafers to be processed, and the transfer robot is used to transfer the wafers in the storage chamber from the storage chamber to the reaction chamber for wafer reaction treatment. It will not be repeated here.

[0074] The reaction chamber 1 is a chamber suitable for depositing semiconductor materials on a wafer. In some embodiments, the process of depositing the semiconductor material may be chemical vapor deposition (CVD), which heats one or more gases (called precursors) to decompose them, produce reaction products, and deposit them on the surface of the semiconductor to form the desired film. For example, tungsten is often used as a highly conductive interconnect metal or an isolation structure between aluminum and silicon in the manufacture of integrated circuits. Therefore, in the actual process, a tungsten chemical vapor deposition (WCVD) process may be used to form a tungsten film on the surface of the wafer.

[0075] See also Figure 2 , displayed as Figure 1 A schematic diagram of the side view of the reaction chamber in one embodiment. Figure 1 and Figure 2 As shown, the reaction chamber 1 includes a reaction cavity 11 , a wafer carrier 13 , and a liner 15 .

[0076] The reaction chamber 11 is provided with a first material inlet and outlet 111, and the first material inlet and outlet 111 can be used to transfer related workpieces, including but not limited to wafers, shielding rings, etc. Generally, a first slit door 113 is provided at the first material inlet and outlet 111, and the first slit door 113 can move in the up-down direction or the left-right direction relative to the first material inlet and outlet 111.

[0077] The wafer stage 13 is disposed in the reaction chamber 11 for carrying the wafer. In some embodiments, the reaction chamber 1 performs a thin film deposition process on only one wafer at a time, so the wafer stage 13 is located at the center of the reaction chamber 11 .

[0078] In some embodiments, a general thermal chemical vapor deposition (TCVD) process is implemented in the reaction chamber 1, and the wafer stage 13 may include a heater for carrying and heating the wafer 100. Exemplarily, the heater is a circular structure, and the heater may include an internal cooling channel, and the cooling substance introduced into the internal cooling channel includes cooling gas or cooling liquid.

[0079] In some embodiments, plasma enhanced chemical vapor deposition (PECVD) is implemented in the reaction chamber 1, and the wafer carrier 13 may be, for example, a wafer tray, and a lower electrode is further configured below the wafer tray. Correspondingly, an upper electrode may be configured at the top of the reaction chamber 11. Exemplarily, the wafer tray is a circular structure.

[0080] In addition, taking the wafer stage 13 as a heater as an example, the bottom of the heater can be associated with a rotating device. The rotating device can include a selective rotating member and a rotating power mechanism, and the rotating member can be sealed with the heater and the reaction chamber 11. The selective power mechanism can drive the rotating member and the associated heater and the wafer carried by it to reciprocate, so that the thin film deposited on the wafer can be more uniform.

[0081] A top cover is provided on the upper part of the reaction chamber 11, and a nozzle or nozzle assembly 171 is provided on the top cover toward the wafer stage 13, for spraying raw material gas toward the wafer stage 13. The nozzle or nozzle assembly 171 is connected to a pipe 173 and a gas source 175 for conveying raw material gas into the reaction chamber 11, and the supply amount of raw material gas conveyed into the reaction chamber 11 can be adjusted by setting a gas valve.

[0082] In some embodiments, at least one edge ring 131 may be disposed around the wafer stage 13 to adjust the temperature, airflow or plasma distribution at the edge of the wafer. The edge ring 131 includes at least one of a focus ring, a cover ring and an isolation ring.

[0083] The liner 15 is disposed on the periphery of the wafer stage 13 and has a shadow ring bearing surface higher than the wafer 100. The shadow ring bearing surface can be used to bear a shadow ring 200. The shadow ring 200 is mainly used to shield the edge area of ​​the wafer 100 in the process technology to prevent the edge of the wafer 100 from forming a fragile film and peeling off to pollute the environment in the chamber.

[0084] Generally, a wafer channel 150 may be provided in the liner 15 at a position corresponding to the first material inlet and outlet port 111 and the wafer stage 13 . The wafer channel 150 has a transfer space for accommodating the transfer robot 53 and allowing the transfer robot 53 and the wafer 100 carried by the transfer robot 53 to pass through.

[0085] To meet the shielding requirements, the shielding ring 200 is a replaceable component. For example, after a thin film deposition process is performed on one wafer or a predetermined number of wafers, a new shielding ring needs to be replaced.

[0086] In the related art, when loading and unloading the shielding ring, the reaction chamber must be opened for operation, which will destroy the atmosphere in the reaction chamber cavity. After the loading and unloading is completed, the machine must be restarted, which has a great adverse effect on the consistency of the environmental parameters before and after the reaction chamber cavity, and will cause the process flow to be interrupted and discontinuous, consuming a lot of time and resulting in low efficiency.

[0087] To this end, in the embodiment of the present disclosure, a transfer avoidance structure 151 is additionally provided at the top of the liner 15 corresponding to the first material inlet and outlet 111. The position of the transfer avoidance structure 151 is higher than the position of the wafer channel 150. The transfer avoidance structure 151 has a transfer avoidance space for accommodating the transfer robot 53 and allowing the transfer robot 53 to move. In some embodiments, the transfer avoidance structure 151 is a groove structure, the width of the groove structure is adapted to the transfer robot 53 to provide the transfer robot 53 with entry, and the height of the groove structure can provide the transfer robot 53 with a certain lifting and transfer space.

[0088] Generally, the transfer robot 53 is used to move into or out of the reaction chamber 11 through the first inlet and outlet port 111. In addition, as mentioned above, the liner 15 has a shielding ring bearing surface that is higher than the wafer 100. Therefore, in the embodiment of the present disclosure, in order to enable the transfer robot 53 to carry the shielding ring 200 to be smoothly moved into or out of the reaction chamber 11 through the first inlet and outlet port 111, the height of the first inlet and outlet port 111 is greater than or equal to the shielding ring bearing surface of the liner 15. Compared with the existing related technologies, the height of the first inlet and outlet port 111 is increased.

[0089] When the shield ring 200 is loaded by the transfer robot 53, the transfer robot 53 delivers the shield ring 200 to be loaded into the reaction chamber 11 through the first inlet and outlet port 111 of the reaction chamber 1 and places it directly above the wafer 100; the transfer robot 53 is lowered so that the transfer robot 53 falls into the transfer avoidance structure 151 and the shield ring 200 falls onto the shield ring bearing surface of the liner 15; the transfer robot in the transfer avoidance structure 151 is lowered by an avoidance gap so that the transfer robot 53 is separated from the shield ring 200; the transfer robot 53 is moved out of the transfer avoidance structure 151 through the first inlet and outlet port 111. As mentioned above, when the transfer avoidance structure 151 is implemented as a groove structure, the height of the groove structure can provide the transfer robot 53 with a certain lifting and lowering transfer space, and here, that is, the height of the groove structure must be at least greater than or equal to the avoidance gap.

[0090] When the transfer robot 53 is used to unload the shielding ring 200, the transfer robot 53 is passed through the first inlet and outlet 111 of the reaction chamber 1 into the transfer avoidance structure 151 and is located directly below the shielding ring 200 carried by the liner 15; the transfer robot 53 in the transfer avoidance structure 151 is raised by an avoidance gap, and during the rising process, the transfer robot 53 supports the shielding ring 200 and separates the shielding ring 200 from the liner 15; the transfer robot 53 and the shielding ring 200 it carries are moved out through the first inlet and outlet 111 of the reaction chamber 1.

[0091] The cooling chamber 3 is located beside the reaction chamber 1 and is used to place the wafer and the shielding ring. Since the temperature of the wafer that has just completed the deposition process is relatively high, the wafer that has completed the deposition process can be transferred to the cooling chamber 3 for cooling by the transfer robot in the transfer device. In the embodiment of the present disclosure, the reaction chamber 1 can be used to place the shielding ring therein.

[0092] See also Figure 3 , displayed as Figure 1 A schematic diagram of the side view of the cooling chamber in one embodiment. Figure 1 and Figure 3As shown, the cooling chamber 3 includes a cooling cavity 31 , at least one wafer supporting device 33 , and at least one first shielding ring supporting device 35 .

[0093] The cooling chamber 3 is provided with a second inlet and outlet 311, and the second inlet and outlet 311 can be used to transfer related workpieces, including but not limited to wafers, shielding rings, etc. Generally, a second slit door 313 is provided at the second inlet and outlet 311, and the second slit door 313 can move in the up-down direction or the left-right direction relative to the second inlet and outlet 311.

[0094] At least one wafer carrier 33 and at least one first shadow ring carrier 35 are provided in the cooling chamber 3. The at least one wafer carrier 33 is used to carry the wafer 100, and the at least one first shadow ring carrier 35 is used to carry the shadow ring 200. The size of the shadow ring 200 is larger than that of the wafer 100, so the size of the first shadow ring carrier 35 is larger than that of the wafer carrier 33.

[0095] In some embodiments, at least one wafer carrier 33 and at least one first shielding ring carrier 35 are arranged in a high-low layered manner in the cooling chamber 31. Exemplarily, at least one wafer carrier 33 is arranged in the upper part of the cooling chamber 31, and at least one first shielding ring carrier 35 is arranged in the lower part of the cooling chamber 31.

[0096] For the first shielding ring supporting device 35, please refer to Figure 4 , displayed as Figure 3 Schematic diagram of the side view structure in the AA direction. Figure 4 As shown, each first shielding ring supporting device 35 is used to support a shielding ring 200. In some embodiments, the first shielding ring supporting device 35 includes two first supporting fences 351 arranged opposite to each other, and the distance between the two first supporting fences 351 arranged opposite to each other is smaller than the diameter of the shielding ring 200. The two first supporting fences 351 can support the two edges of the shielding ring 200.

[0097] In order to allow the shield ring 200 to be placed on the first shield ring supporting device 35 more stably, in some embodiments, a shield ring positioning structure is further provided.

[0098] Exemplarily, a raised positioning pin 201 is provided at the bottom of the shielding ring 200, and a positioning hole corresponding to the positioning pin 201 is provided on the first supporting fence 351 of the first shielding ring supporting device 35. In this way, when the shielding ring 200 is placed, when the positioning pin 201 of the shielding ring 200 is placed correspondingly on the positioning hole on the first supporting fence 351 of the first shielding ring supporting device 35, it indicates that the shielding ring 200 is placed in place. At this time, the coordination of the positioning pin 201 and the positioning hole can ensure the stability of the shielding ring 200 placed on the first supporting fence 351 of the first shielding ring supporting device 35.

[0099] Similarly, in a case where a raised positioning pin 201 is provided at the bottom of the shielding ring 200, a positioning hole corresponding to the positioning pin 201 is provided on the shielding ring bearing surface of the liner 15 in the reaction chamber 1. In this way, when the shielding ring 200 is placed, when the positioning pin 201 of the shielding ring 200 is placed correspondingly on the positioning hole on the shielding ring bearing surface of the liner 15, it indicates that the shielding ring 200 is placed in place. At this time, the coordination of the positioning pin 201 and the positioning hole can ensure the stability of the shielding ring 200 placed on the shielding ring bearing surface of the liner 15.

[0100] Exemplarily, a raised positioning hole is provided at the bottom of the shielding ring 200, and a positioning pin corresponding to the positioning hole is provided on the first supporting fence 351 of the first shielding ring supporting device 35. Thus, when the shielding ring 200 is placed, when the positioning hole of the shielding ring 200 is aligned with the positioning pin on the first supporting fence 351 of the first shielding ring supporting device 35, it indicates that the shielding ring 200 is placed in place. At this time, the stability of the shielding ring 200 placed on the first supporting fence 351 of the first shielding ring supporting device 35 can be ensured by the cooperation of the positioning hole and the positioning pin.

[0101] Similarly, in a case where a raised positioning hole is provided at the bottom of the shielding ring 200, a positioning pin corresponding to the positioning hole is provided on the shielding ring bearing surface of the liner 15 in the reaction chamber 1. In this way, when the shielding ring 200 is placed, when the positioning hole of the shielding ring 200 is aligned with the positioning pin on the shielding ring bearing surface of the liner 15, it indicates that the shielding ring 200 is placed in place. At this time, the cooperation between the positioning hole and the positioning pin can ensure the stability of the shielding ring 200 placed on the shielding ring bearing surface of the liner 15.

[0102] When based on the control instruction to place the shielding ring 200 on the first shielding ring supporting device 35, the driving unit 51 in the control transfer device 5 drives the transfer robot 53 to carry the shielding ring 200 to be placed and enter from the second inlet and outlet 311 of the cooling chamber 3 and place the shielding ring 200 directly above the designated first shielding ring supporting device 35; the transfer robot 53 is lowered, so that the transfer robot 53 falls into the area between the two first supporting fences 351 in the first shielding ring supporting device 35 and the shielding ring 200 falls onto the supporting surfaces of the two first supporting fences 351, and the positioning pin 201 at the bottom of the shielding ring 200 corresponds to the positioning hole on the first supporting fence 351 of the first shielding ring supporting device 35, completing the placement of the shielding ring 200; subsequently, the transfer robot 53 is lowered to avoid a gap, so that the transfer robot 53 is separated from the shielding ring 200, and then the transfer robot 53 is moved out of the cooling chamber 3 through the second inlet and outlet 311.

[0103] Similarly, when a control instruction is given to remove the shielding ring 200 from the first shielding ring carrier 35, the driving unit 51 in the control transfer device 5 drives the transfer robot 53 to enter from the second inlet and outlet 311 of the cooling chamber 3, and transfer to the area between the two first supporting fences 351 in the designated first shielding ring carrier 35 and directly below the shielding ring 200; the transfer robot 53 is raised by an avoidance gap, and during the rising process, the transfer robot 53 supports the shielding ring 200 and separates the shielding ring 200 from the two first supporting fences 351 in the first shielding ring carrier 35; the transfer robot 53 and the shielding ring 200 it carries are moved out through the second inlet and outlet of the cooling chamber 3.

[0104] In addition, the transfer robot 53 is suitable for transferring both the wafer 100 and the shadow ring 200. Therefore, in some embodiments, Figure 5 As shown, the transfer robot 53 is provided with a wafer alignment structure 531 corresponding to the wafer 100 and a shielding ring alignment structure 533 corresponding to the shielding ring 200 , wherein the wafer alignment structure 531 is closer to the end of the transfer robot 53 than the shielding ring alignment structure 533 .

[0105] Exemplarily, the wafer alignment structure 531 is implemented as a wafer alignment mark, which corresponds to the edge of the wafer 100, and the shielding ring alignment structure 533 is implemented as a shielding ring alignment mark, which corresponds to the edge of the shielding ring 200, wherein the wafer alignment mark is closer to the end of the transfer robot 53 than the shielding ring alignment mark.

[0106] Exemplarily, the wafer alignment structure 531 is implemented as a wafer alignment groove, which corresponds to the edge of the wafer 100, and the shadow ring alignment structure 533 is implemented as a shadow ring alignment groove, which corresponds to the edge of the shadow ring 200, wherein the wafer alignment groove is closer to the end of the transfer robot 53 than the shadow ring alignment groove. In some examples, the wafer alignment groove is lower than the shadow ring alignment groove and forms a step with the shadow ring alignment groove.

[0107] The wafer processing equipment in the embodiment of the present invention is also equipped with a controller, and the reaction chamber 1, the cooling chamber 3, and the transfer device 5 can all be controlled by the controller. Figure 1 In the embodiment, the controller is hidden because it is encapsulated in the device. The controller can be set at a suitable position in the device according to requirements.

[0108] See also Figure 6 , which is a schematic diagram of the module structure of the controller disclosed in one embodiment.

[0109] like Figure 6 As shown, the controller includes a processor 91 and a memory 93. The processor 91 and the memory 93 can communicate with each other through a bus 92. The memory 93 can store a computer program, which can also be called a host computer software. The processor 91 implements various steps of controlling the reaction chamber 1 to implement a wafer thin film deposition process, controlling the cooling chamber to implement a wafer cooling process, and controlling the transfer device to implement various operations such as wafer transfer and shielding ring transfer by running the computer program in the memory 93.

[0110] The bus 92 may be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, although only one thick line is used in the figure, it does not mean that there is only one bus or one type of bus.

[0111] In some embodiments, the processor 91 may be implemented as a central processing unit (CPU), a microprocessor unit (MCU), a system on chip (SoC), or a field programmable gate array (FPGA). The memory 93 may include a volatile memory for temporary storage of data when running a program, such as a random access memory (RAM). The memory 93 may also include a non-volatile memory (NVM) for data storage, such as a read-only memory (ROM), a flash memory, a hard disk drive (HDD), or a solid-state disk (SSD).

[0112] When the wafer processing equipment of the above-mentioned embodiment is applied to implement the corresponding process technology, the controller implements the steps of controlling the reaction chamber to implement the wafer thin film deposition process technology, controlling the cooling chamber to implement the wafer cooling process technology, and the transfer device to implement various operations such as wafer transfer and shielding ring transfer based on the computer program.

[0113] Taking the loading operation involving the shielding ring as an example, see Figure 7 , which is a flow chart showing a loading operation of a shadow ring in an embodiment of the wafer processing method disclosed herein.

[0114] like Figure 7 As shown, the controller sends a shielding ring loading instruction and controls the transfer device to perform the following operations:

[0115] Step S701: A driving unit in the transfer device controls a transfer robot to remove a shielding ring to be loaded from a first shielding ring carrying device in the cooling chamber and transfer the shielding ring out of the cooling chamber.

[0116] The specific operations of step S701 may include: the driving unit 51 in the transfer device 5 drives the transfer robot 53 to enter from the second inlet and outlet 311 of the cooling chamber 3, and transfer to the area between the two first supporting fences 351 in the designated first shielding ring carrier 35 and directly below the shielding ring 200; the transfer robot 53 is raised by an avoidance gap, and during the rising process, the transfer robot 53 supports the shielding ring 200 and separates the shielding ring 200 from the two first supporting fences 351 in the first shielding ring carrier 35; the transfer robot 53 and the shielding ring 200 it carries are moved out through the second inlet and outlet 311 of the cooling chamber 3.

[0117] In step S703, the driving unit in the transfer device controls the transfer robot to load the carried shielding ring onto the liner in the reaction chamber.

[0118] The specific operations of step S703 may include: the driving unit 51 in the transfer device 5 drives the transfer robot 53 to send the carried shielding ring 200 into the reaction chamber 1 through the first inlet and outlet 111 of the reaction chamber 1 and to be located directly above the wafer 100 carried by the wafer carrier 13; lowering the transfer robot 53 so that the transfer robot 53 falls into the transfer avoidance structure 151 and the shielding ring 200 falls onto the shielding ring carrying surface of the lining 15; lowering the transfer robot 53 in the transfer avoidance structure 151 by an avoidance gap so that the transfer robot 53 is separated from the shielding ring 200; and moving the transfer robot 53 out of the transfer avoidance structure 151 through the first inlet and outlet 111.

[0119] Taking the unloading operation involving the shielding ring as an example, see Figure 8 , which is a flow chart showing an unloading operation of a shadow ring in an embodiment of the wafer processing method disclosed herein.

[0120] like Figure 8 As shown, the controller sends a shielding ring unloading instruction and controls the transfer device to perform the following operations:

[0121] In step S801, a driving unit in the transfer device controls a transfer robot to remove a shield ring to be unloaded from an inner liner of a reaction chamber and transfer the shield ring out of the reaction chamber.

[0122] The specific operations of step S801 may include: the driving unit 51 in the transfer device 5 drives the transfer robot 53 through the first inlet and outlet 111 of the reaction chamber 1 to enter the transfer avoidance structure 151 and be placed directly below the shielding ring 200 carried by the liner 15; the transfer robot 53 in the transfer avoidance structure 151 is raised by an avoidance gap, and during the rising process, the transfer robot 53 supports the shielding ring 200 and separates the shielding ring 200 from the liner 15; the transfer robot 53 and the shielding ring 200 it carries are moved out through the first inlet and outlet 111 of the reaction chamber 1.

[0123] Step S803: The driving unit in the transfer device controls the transfer robot to load the carried shielding ring onto the first shielding ring carrying device in the cooling chamber.

[0124] The specific operations of step S803 may include: the driving unit 51 in the control transfer device 5 drives the transfer robot 53 carrying the shielding ring 200 to be placed to enter from the second inlet and outlet 311 of the cooling chamber 3 and place the shielding ring 200 directly above the designated first shielding ring supporting device 35; the transfer robot 53 is lowered, so that the transfer robot 53 falls into the area between the two first supporting fences 351 in the first shielding ring supporting device 35 and the shielding ring 200 falls onto the supporting surfaces of the two first supporting fences 351, and the positioning pin 201 at the bottom of the shielding ring 200 corresponds to the positioning hole on the first supporting fence 351 of the first shielding ring supporting device 35, completing the placement of the shielding ring 200; the transfer robot 53 is lowered to avoid a gap, so that the transfer robot 53 is separated from the shielding ring 200, and then the transfer robot 53 is moved out of the cooling chamber 3 through the second inlet and outlet 311.

[0125] As described above, an embodiment of the present disclosure provides a wafer processing equipment and a wafer processing method, wherein the wafer processing equipment includes a reaction chamber, a cooling chamber, and a transfer device, wherein the reaction chamber includes a reaction cavity, a wafer carrier, and an inner lining, wherein a transfer avoidance structure is provided at the top of the inner lining corresponding to the first material inlet and outlet, wherein the transfer avoidance structure has a transfer avoidance space for accommodating a transfer robot and enabling the transfer robot to move; the cooling chamber includes a cooling cavity, at least one wafer carrier, and at least one first shielding ring carrier; the transfer device includes a drive unit and a transfer robot. When the wafer processing equipment provided by the embodiment of the present disclosure is applied, when loading and unloading the shield ring, the shield ring to be loaded is removed from the first shield ring supporting device of the cooling chamber by a transfer robot, and then enters from the first inlet and outlet of the reaction chamber, and the shield ring is loaded to the installation position of the liner by adjusting the position in the transfer avoidance structure. The shield ring to be unloaded is removed from the installation position of the liner by a transfer robot, and is moved out through the first inlet and outlet of the reaction chamber and moved into the first shield ring supporting device in the cooling chamber by adjusting the position in the transfer avoidance structure. Compared with the related art, by providing a transfer avoidance structure in the inner lining of the reaction chamber, adjustment space can be provided for the transfer robot to enter and adjust the position, which can avoid interference with other components. Therefore, the shielding ring can be loaded and unloaded by the existing transfer robot without opening the top cover of the reaction chamber. The whole process is automated, and in particular, it will not damage the overall atmosphere in the cavity, ensuring the consistency of the environmental parameters before and after the cavity. After the loading and unloading is completed, the process of re-starting the machine is eliminated, ensuring the continuity of the wafer processing process, saving labor costs and time, and greatly improving the overall efficiency. In addition, at least one first shielding ring carrying device is arranged in the cooling chamber to carry the shielding ring, thereby opening up a structure for storing the shielding ring in the overall wafer processing equipment, creating favorable conditions for loading and unloading the shielding ring without damaging the atmosphere of the reaction chamber.

[0126] See also Fig. 9 , which is a schematic diagram of a top view of the structure of the wafer processing equipment disclosed in another embodiment.

[0127] like Fig. 9As shown, the wafer processing equipment in this embodiment may include: a reaction chamber 1, a cooling chamber 3, a shielding ring carrying chamber 6, and a transfer device 5. Among them, the reaction chamber 1, the cooling chamber 3, and the shielding ring carrying chamber 6 are adjacently arranged through a conveying chamber 50, and the transfer device 5 is arranged in the conveying chamber 50. The transfer device 5 may include a driving unit 51 and a transfer robot 53 controlled by the driving unit 51. By means of the transfer robot 53, the wafer that has completed the reaction treatment in the reaction chamber 1 can be transferred from the reaction chamber 1 to the cooling chamber 3, and the shielding ring can be transferred between the reaction chamber 1 and the shielding ring carrying chamber 6. In fact, the wafer processing equipment in this embodiment may also include a storage chamber for storing wafer boxes, the wafer boxes are loaded with wafers to be processed, and the wafers in the storage chamber are transferred from the storage chamber to the reaction chamber for wafer reaction treatment by means of the transfer robot. It will not be repeated here.

[0128] The reaction chamber 1 is a chamber suitable for depositing semiconductor materials on a wafer. In some embodiments, the process of depositing the semiconductor material may be chemical vapor deposition (CVD), which heats one or more gases (called precursors) to decompose them, produce reaction products, and deposit them on the surface of the semiconductor to form the desired film. For example, tungsten is often used as a highly conductive interconnect metal or an isolation structure between aluminum and silicon in the manufacture of integrated circuits. Therefore, in the actual process, a tungsten chemical vapor deposition (WCVD) process may be used to form a tungsten film on the surface of the wafer.

[0129] See also Fig.10 , displayed as Fig. 9 A schematic diagram of the side view of the reaction chamber in another embodiment. Fig. 9 and Fig.10 As shown, the reaction chamber 1 includes a reaction cavity 11 , a wafer carrier 13 , and a liner 15 .

[0130] The reaction chamber 11 is provided with a first material inlet and outlet 111, and the first material inlet and outlet 111 can be used to transfer related workpieces, including but not limited to wafers, shielding rings, etc. Generally, a first slit door is provided at the first material inlet and outlet 111, and the first slit door can move in the up-down direction or the left-right direction relative to the first material inlet and outlet 111.

[0131] The wafer stage 13 is disposed in the reaction chamber 11 for carrying the wafer. In some embodiments, the reaction chamber 1 performs a thin film deposition process on only one wafer at a time, so the wafer stage 13 is located at the center of the reaction chamber 11 .

[0132] In some embodiments, a general thermal chemical vapor deposition (TCVD) process is implemented in the reaction chamber 1, and the wafer stage 13 may include a heater for carrying and heating the wafer 100. Exemplarily, the heater is a circular structure, and the heater may include an internal cooling channel, and the cooling substance introduced into the internal cooling channel includes cooling gas or cooling liquid.

[0133] In some embodiments, plasma enhanced chemical vapor deposition (PECVD) is implemented in the reaction chamber 1, and the wafer carrier 13 may be, for example, a wafer tray, and a lower electrode is further configured below the wafer tray. Correspondingly, an upper electrode may be configured at the top of the reaction chamber 11. Exemplarily, the wafer tray is a circular structure.

[0134] In addition, taking the wafer stage 13 as a heater as an example, the bottom of the heater can be associated with a rotating device. The rotating device can include a selective rotating member and a rotating power mechanism, and the rotating member can be sealed with the heater and the reaction chamber 11. The selective power mechanism can drive the rotating member and the associated heater and the wafer carried by it to reciprocate, so that the thin film deposited on the wafer can be more uniform.

[0135] A top cover is provided on the upper part of the reaction chamber 11, and a nozzle or nozzle assembly 171 is provided on the top cover toward the wafer stage 13, for spraying raw material gas toward the wafer stage 13. The nozzle or nozzle assembly 171 is connected to a pipe 173 and a gas source 175 for conveying raw material gas into the reaction chamber 11, and the supply amount of raw material gas conveyed into the reaction chamber 11 can be adjusted by setting a gas valve.

[0136] In some embodiments, at least one edge ring 131 may be disposed around the wafer stage 13 to adjust the temperature, airflow or plasma distribution at the edge of the wafer. The edge ring 131 includes at least one of a focus ring, a cover ring and an isolation ring.

[0137] The liner 15 is disposed on the periphery of the wafer stage 13 and has a shadow ring bearing surface higher than the wafer 100. The shadow ring bearing surface can be used to bear a shadow ring 200. The shadow ring 200 is mainly used to shield the edge area of ​​the wafer 100 in the process technology to prevent the edge of the wafer 100 from forming a fragile film and peeling off to pollute the environment in the chamber.

[0138] Generally, a wafer channel 150 may be provided in the liner 15 at a position corresponding to the first material inlet and outlet port 111 and the wafer stage 13 . The wafer channel 150 has a transfer space for accommodating the transfer robot 53 and allowing the transfer robot 53 and the wafer 100 carried by the transfer robot 53 to pass through.

[0139] To meet the shielding requirements, the shielding ring 200 is a replaceable component. For example, after a thin film deposition process is performed on one wafer or a predetermined number of wafers, a new shielding ring needs to be replaced.

[0140] In the related art, when loading and unloading the shielding ring, the reaction chamber must be opened for operation, which will destroy the atmosphere in the reaction chamber cavity. After the loading and unloading is completed, the machine must be restarted, which has a great adverse effect on the consistency of the environmental parameters before and after the reaction chamber cavity, and will cause the process flow to be interrupted and discontinuous, consuming a lot of time and resulting in low efficiency.

[0141] To this end, in the embodiment of the present disclosure, a transfer avoidance structure 151 is additionally provided at the top of the liner 15 corresponding to the first material inlet and outlet 111. The position of the transfer avoidance structure 151 is higher than the position of the wafer channel 150. The transfer avoidance structure 151 has a transfer avoidance space for accommodating the transfer robot 53 and allowing the transfer robot 53 to move. In some embodiments, the transfer avoidance structure 151 is a groove structure, the width of the groove structure is adapted to the transfer robot 53 to provide the transfer robot 53 with entry, and the height of the groove structure can provide the transfer robot 53 with a certain lifting and transfer space.

[0142] Generally, the transfer robot 53 is used to move into or out of the reaction chamber 11 through the first inlet and outlet port 111. In addition, as mentioned above, the liner 15 has a shielding ring bearing surface that is higher than the wafer 100. Therefore, in the embodiment of the present disclosure, in order to enable the transfer robot 53 to carry the shielding ring 200 to be smoothly moved into or out of the reaction chamber 11 through the first inlet and outlet port 111, the height of the first inlet and outlet port 111 is greater than or equal to the shielding ring bearing surface of the liner 15. Compared with the existing related technologies, the height of the first inlet and outlet port 111 is increased.

[0143] When the shield ring 200 is loaded by the transfer robot 53, the transfer robot 53 delivers the shield ring 200 to be loaded into the reaction chamber 11 through the first inlet and outlet port 111 of the reaction chamber 1 and places it directly above the wafer 100; the transfer robot 53 is lowered so that the transfer robot 53 falls into the transfer avoidance structure 151 and the shield ring 200 falls onto the shield ring bearing surface of the liner 15; the transfer robot in the transfer avoidance structure 151 is lowered by an avoidance gap so that the transfer robot 53 is separated from the shield ring 200; the transfer robot 53 is moved out of the transfer avoidance structure 151 through the first inlet and outlet port 111. As mentioned above, when the transfer avoidance structure 151 is implemented as a groove structure, the height of the groove structure can provide the transfer robot 53 with a certain lifting and lowering transfer space, and here, that is, the height of the groove structure must be at least greater than or equal to the avoidance gap.

[0144] When the transfer robot 53 is used to unload the shielding ring 200, the transfer robot 53 is passed through the first inlet and outlet 111 of the reaction chamber 1 into the transfer avoidance structure 151 and is located directly below the shielding ring 200 carried by the liner 15; the transfer robot 53 in the transfer avoidance structure 151 is raised by an avoidance gap, and during the rising process, the transfer robot 53 supports the shielding ring 200 and separates the shielding ring 200 from the liner 15; the transfer robot 53 and the shielding ring 200 it carries are moved out through the first inlet and outlet 111 of the reaction chamber 1.

[0145] The cooling chamber 3 is located beside the reaction chamber 1 and is used to place the wafers. Since the temperature of the wafers that have just completed the deposition process is relatively high, the wafers that have completed the deposition process can be transferred to the cooling chamber 3 for cooling by the transfer robot in the transfer device.

[0146] The cooling chamber 3 includes a cooling cavity and at least one wafer carrying device.

[0147] The cooling chamber 3 is provided with a second inlet and outlet, and wafers can be transferred by using the second inlet and outlet. Generally, a second slit valve is provided at the second inlet and outlet, and the second slit valve can move up and down or left and right relative to the second inlet and outlet.

[0148] At least one wafer carrying device is disposed in the cooling chamber 3 for carrying wafers.

[0149] Regarding the specific structure of the cooling chamber 3, reference may be made to the description of the aforementioned embodiments or other related technologies, which will not be described in detail here.

[0150] The shielding ring carrying chamber 6 is located beside the reaction chamber 1 and is used for placing the shielding ring.

[0151] See also Fig.11 , displayed as Fig. 9 A schematic diagram of the side view of the middle shielding ring bearing chamber in one embodiment. Fig. 9 and Fig.11 As shown, the shielding ring bearing chamber 6 includes a bearing cavity 61 and at least one second shielding ring bearing device 63 .

[0152] The shielding ring carrying chamber 6 is provided with a third inlet and outlet 611, and the shielding ring can be transferred by using the third inlet and outlet 611. Generally, a third slit door 613 is provided at the third inlet and outlet 611, and the third slit door 613 can move in the up-down direction or the left-right direction relative to the third inlet and outlet 611.

[0153] At least one second shadow ring carrying device 63 is disposed in the shadow ring carrying chamber 6, and the at least one second shadow ring carrying device 63 is used to carry the shadow ring 200. The at least one second shadow ring carrying device 63 is arranged in the shadow ring carrying chamber 6 in a layered manner.

[0154] For the second shielding ring supporting device 63, please refer to Fig.12 , displayed as Figure 3 The side view of the structure in the BB direction. Fig.12 As shown, each second shielding ring supporting device 63 is used to support a shielding ring 200. In some embodiments, the second shielding ring supporting device 63 includes two second supporting fences 631 disposed opposite to each other, and the distance between the two second supporting fences 631 disposed opposite to each other is smaller than the diameter of the shielding ring 200. The two second supporting fences 631 can support the two edges of the shielding ring 200.

[0155] In order to allow the shield ring 200 to be placed on the second shield ring supporting device 63 more stably, in some embodiments, a shield ring positioning structure is further provided.

[0156] Exemplarily, a raised positioning pin 201 is provided at the bottom of the shielding ring 200, and a positioning hole corresponding to the positioning pin 201 is provided on the second supporting fence 631 of the second shielding ring supporting device 63. In this way, when the shielding ring 200 is placed, when the positioning pin 201 of the shielding ring 200 is placed correspondingly on the positioning hole on the second supporting fence 631 of the second shielding ring supporting device 63, it indicates that the shielding ring 200 is placed in place. At this time, the stability of the shielding ring 200 placed on the second supporting fence 631 of the second shielding ring supporting device 63 can be ensured by the cooperation of the positioning pin 201 and the positioning hole.

[0157] Similarly, in a case where a raised positioning pin 201 is provided at the bottom of the shielding ring 200, a positioning hole corresponding to the positioning pin 201 is provided on the shielding ring bearing surface of the liner 15 in the reaction chamber 1. In this way, when the shielding ring 200 is placed, when the positioning pin 201 of the shielding ring 200 is placed correspondingly on the positioning hole on the shielding ring bearing surface of the liner 15, it indicates that the shielding ring 200 is placed in place. At this time, the coordination of the positioning pin 201 and the positioning hole can ensure the stability of the shielding ring 200 placed on the shielding ring bearing surface of the liner 15.

[0158] Exemplarily, a raised positioning hole is provided at the bottom of the shielding ring 200, and a positioning pin corresponding to the positioning hole is provided on the second supporting fence 631 of the second shielding ring supporting device 63. Thus, when the shielding ring 200 is placed, when the positioning hole of the shielding ring 200 is aligned with the positioning pin on the second supporting fence 631 of the second shielding ring supporting device 63, it indicates that the shielding ring 200 is placed in place. At this time, the stability of the shielding ring 200 placed on the second supporting fence 631 of the second shielding ring supporting device 63 can be ensured by the cooperation of the positioning hole and the positioning pin.

[0159] Similarly, in a case where a raised positioning hole is provided at the bottom of the shielding ring 200, a positioning pin corresponding to the positioning hole is provided on the shielding ring bearing surface of the liner 15 in the reaction chamber 1. In this way, when the shielding ring 200 is placed, when the positioning hole of the shielding ring 200 is aligned with the positioning pin on the shielding ring bearing surface of the liner 15, it indicates that the shielding ring 200 is placed in place. At this time, the cooperation between the positioning hole and the positioning pin can ensure the stability of the shielding ring 200 placed on the shielding ring bearing surface of the liner 15.

[0160] When the control instruction to place the shielding ring 200 on the second shielding ring supporting device 63 is received, the driving unit 51 in the control transfer device 5 drives the transfer robot 53 to carry the shielding ring 200 to be placed from the third inlet and outlet 611 of the shielding ring supporting chamber 6 and place the shielding ring 200 directly above the designated second shielding ring supporting device 63; the transfer robot 53 is lowered so that the transfer robot 53 falls into the two second supporting fences in the second shielding ring supporting device 63. 631 and the shielding ring 200 falls onto the bearing surfaces of the two second supporting fences 631, and the positioning pins 201 at the bottom of the shielding ring 200 fall correspondingly on the positioning holes on the second supporting fences 631 of the second shielding ring bearing device 63, completing the placement of the shielding ring 200; subsequently, the transfer robot 53 is lowered to make an avoidance gap so that the transfer robot 53 is separated from the shielding ring 200, and then the transfer robot 53 is moved out of the shielding ring bearing chamber 6 through the third inlet and outlet port 611.

[0161] Similarly, when a control instruction is given to remove the shield ring 200 from the second shield ring carrier 63, the drive unit 51 in the control transfer device 5 drives the transfer robot 53 to enter from the third inlet and outlet port 611 of the shield ring carrier chamber 6, and transfer to the area between the two second supporting fences 631 in the designated second shield ring carrier 63 and directly below the shield ring 200; the transfer robot 53 is raised by an avoidance gap, and during the rising process, the transfer robot 53 supports the shield ring 200 and separates the shield ring 200 from the two second supporting fences 631 in the second shield ring carrier 63; the transfer robot 53 and the shield ring 200 it carries are moved out through the third inlet and outlet port 611 of the shield ring carrier chamber 6.

[0162] In addition, the transfer robot 53 is suitable for transferring both the wafer 100 and the shielding ring 200. Therefore, in some embodiments, the transfer robot 53 is provided with a wafer alignment structure corresponding to the wafer 100 and a shielding ring alignment structure corresponding to the shielding ring 200, wherein the wafer alignment structure is closer to the end of the transfer robot 53 than the shielding ring alignment structure. Figure 5 .

[0163] Exemplarily, the wafer alignment structure is implemented as a wafer alignment mark corresponding to the edge of the wafer 100 , and the shielding ring alignment structure is implemented as a shielding ring alignment mark corresponding to the edge of the shielding ring 200 .

[0164] Exemplarily, the wafer alignment structure is implemented as a wafer alignment groove, which corresponds to the edge of the wafer 100, and the shadow ring alignment structure is implemented as a shadow ring alignment groove, which corresponds to the edge of the shadow ring 200. In addition, in some examples, the wafer alignment groove is lower than the shadow ring alignment groove and forms a step with the shadow ring alignment groove.

[0165] The wafer processing equipment in the embodiment of the present invention is also equipped with a controller, and the reaction chamber 1, the cooling chamber 3, the shielding ring bearing chamber 6, and the transfer device 5 can all be controlled by the controller. Fig. 9 In the embodiment, the controller is hidden because it is encapsulated in the device. The controller can be set at a suitable position in the device according to requirements.

[0166] For the specific structure of the controller, please refer to Figure 6 And the related description will not be repeated here.

[0167] When the wafer processing equipment of the above-mentioned embodiment is applied to implement the corresponding process technology, the controller implements the steps of controlling the reaction chamber to implement the wafer thin film deposition process technology, controlling the cooling chamber to implement the wafer cooling process technology, and controlling the transfer device to implement various operations such as wafer transfer and shielding ring transfer based on the computer program.

[0168] Taking the loading operation involving the shielding ring as an example, see Fig.13 , which is a schematic flow chart of a loading operation of a shadow ring in another embodiment of the wafer processing method disclosed herein.

[0169] like Fig.13 As shown, the controller sends a shielding ring loading instruction and controls the transfer device to perform the following operations:

[0170] Step S1301 : a driving unit in the transfer device controls a transfer robot to remove a shield ring to be loaded from a second shield ring carrying device in the shield ring carrying chamber and transfer the shield ring out of the shield ring carrying chamber.

[0171] The specific operations of step S1301 may include: the driving unit 51 in the transfer device 5 drives the transfer robot 53 to enter from the third inlet and outlet port 611 of the shielding ring carrying chamber 6, and transfer to the area between the two second supporting fences 631 in the designated second shielding ring carrying device 63 and directly below the shielding ring 200; the transfer robot 53 is raised by an avoidance gap, and during the rising process, the transfer robot 53 supports the shielding ring 200 and separates the shielding ring 200 from the two second supporting fences 631 in the second shielding ring carrying device 63; the transfer robot 53 and the shielding ring 200 it carries are moved out through the third inlet and outlet port 611 of the shielding ring carrying chamber 6.

[0172] In step S1303, the driving unit in the transfer device controls the transfer robot to load the carried shielding ring onto the liner in the reaction chamber.

[0173] The specific operations of step S1303 may include: the driving unit 51 in the transfer device 5 drives the transfer robot 53 to send the carried shielding ring 200 into the reaction chamber 1 through the first inlet and outlet 111 of the reaction chamber 1 and to be located directly above the wafer 100 carried by the wafer carrier 13; lowering the transfer robot 53 so that the transfer robot 53 falls into the transfer avoidance structure 151 and the shielding ring 200 falls onto the shielding ring carrying surface of the lining 15; lowering the transfer robot 53 in the transfer avoidance structure 151 by an avoidance gap so that the transfer robot 53 is separated from the shielding ring 200; and moving the transfer robot 53 out of the transfer avoidance structure 151 through the first inlet and outlet 111.

[0174] Taking the unloading operation involving the shielding ring as an example, see Fig.14 , which is a flow chart showing an unloading operation of a shadow ring in another embodiment of the wafer processing method disclosed herein.

[0175] like Fig.14 As shown, the controller sends a shielding ring unloading instruction and controls the transfer device to perform the following operations:

[0176] In step S1401, a driving unit in the transfer device controls a transfer robot to remove a shield ring to be unloaded from an inner liner of a reaction chamber and transfer the shield ring out of the reaction chamber.

[0177] The specific operations of step S1401 may include: the driving unit 51 in the transfer device 5 drives the transfer robot 53 through the first inlet and outlet 111 of the reaction chamber 1 to enter the transfer avoidance structure 151 and be placed directly below the shielding ring 200 carried by the liner 15; the transfer robot 53 in the transfer avoidance structure 151 is raised by an avoidance gap, and during the rising process, the transfer robot 53 supports the shielding ring 200 and separates the shielding ring 200 from the liner 15; the transfer robot 53 and the shielding ring 200 it carries are moved out through the first inlet and outlet 111 of the reaction chamber 1.

[0178] In step S1403, the driving unit in the transfer device controls the transfer robot to load the carried shield ring onto the second shield ring carrying device in the shield ring carrying chamber.

[0179] The specific operations of step S1403 may include: the driving unit 51 in the control transfer device 5 drives the transfer robot 53 carrying the shielding ring 200 to be placed to enter from the third inlet and outlet 611 of the shielding ring carrying chamber 6 and place the shielding ring 200 directly above the designated second shielding ring carrying device 63; the transfer robot 53 is lowered, so that the transfer robot 53 falls into the area between the two second supporting fences 631 in the second shielding ring carrying device 63 and the shielding ring 200 falls onto the supporting surfaces of the two second supporting fences 631, and the positioning pin 201 at the bottom of the shielding ring 200 corresponds to the positioning hole on the second supporting fence 631 of the second shielding ring carrying device 63, thereby completing the placement of the shielding ring 200; the transfer robot 53 is lowered to avoid a gap, so that the transfer robot 53 is separated from the shielding ring 200, and then the transfer robot 53 is moved out of the shielding ring carrying chamber 6 through the third inlet and outlet 611.

[0180] As described above, an embodiment of the present disclosure provides a wafer processing equipment and a wafer processing method, wherein the wafer processing equipment includes a reaction chamber, a shielding ring carrying chamber, and a transfer device, wherein the reaction chamber includes a reaction cavity, a wafer carrier, and a liner, wherein a transfer avoidance structure is provided at the top of the liner corresponding to the first material inlet and outlet, wherein the transfer avoidance structure has a transfer avoidance space for accommodating a transfer robot and enabling the transfer robot to move; the shielding ring carrying chamber includes a carrying cavity and at least one second shielding ring carrying device; and the transfer device includes a drive unit and a transfer robot. When the wafer processing equipment provided by the embodiment of the present disclosure is applied, when loading and unloading the shield ring, the shield ring to be loaded is removed from the second shield ring supporting device of the shield ring supporting chamber by a transfer robot, and then enters from the first inlet and outlet of the reaction chamber, and the shield ring is loaded to the installation position of the liner by adjusting the position in the transfer avoidance structure. The shield ring to be unloaded is removed from the installation position of the liner by a transfer robot, and is moved out through the first inlet and outlet of the reaction chamber and moved into the second shield ring supporting device in the shield ring supporting chamber by adjusting the position in the transfer avoidance structure. Compared with the related art, by providing a transfer avoidance structure in the inner lining of the reaction chamber, adjustment space can be provided for the transfer robot to enter and adjust the position, and interference with other components can be avoided. Therefore, the shield ring can be loaded and unloaded by the existing transfer robot without opening the top cover of the reaction chamber. The whole process is automated, and in particular, it will not damage the overall atmosphere in the cavity, ensuring the consistency of the environmental parameters before and after the cavity. After the loading and unloading is completed, the process of re-starting the machine is eliminated, ensuring the continuity of the wafer processing process, saving labor costs and time, and greatly improving the overall efficiency. In addition, a shield ring carrying chamber is added, and at least one second shield ring carrying device is provided in the shield ring carrying chamber to carry the shield ring, thereby opening up a structure for storing the shield ring in the overall wafer processing equipment, creating favorable conditions for loading and unloading the shield ring without damaging the atmosphere of the reaction chamber.

[0181] In an embodiment of the present disclosure, a computer-readable storage medium may be provided, storing a computer program or instructions, which, when executed, implements the method flow or functions in any of the previous embodiments.

[0182] That is, the method steps in the above embodiments are implemented as software or computer code that can be stored in a recording medium (such as a CD ROM, RAM, floppy disk, hard disk or magneto-optical disk), or are implemented as computer code originally stored in a remote recording medium or a non-temporary machine-readable medium downloaded via a network and to be stored in a local recording medium, so that the method represented herein can be stored in such software processing on a recording medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or FPGA).

[0183] In the embodiments of the present disclosure, a computer program product may be provided, one or more computer programs or instructions, which, when executed, fully or partially execute the process or function in the embodiments of the present disclosure. The computer program product includes one or more computer programs or instructions.

[0184] The computer program or instructions may be stored in a readable storage medium or transmitted from one readable storage medium to another readable storage medium, for example, the computer program or instructions may be transmitted from one website, computer, server or data center to another website, computer, server or data center by wired or wireless means. The readable storage medium may be any available medium that can be accessed or a data storage device such as a server, data center, etc. that integrates one or more available media. The available medium may be a magnetic medium, such as a floppy disk, a hard disk, or a magnetic tape; it may also be an optical medium, such as a digital video disk; it may also be a semiconductor medium, such as a solid state drive. The computer readable storage medium may be a volatile or non-volatile storage medium, or may include both volatile and non-volatile types of storage media.

[0185] The above embodiments are merely illustrative of the principles and effects of the present disclosure, and are not intended to limit the present disclosure. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present disclosure shall still be covered by the protection scope of the present disclosure.

Claims

1. A wafer processing device, characterized in that: include: The reaction chamber comprises a reaction chamber, a wafer carrier, and an inner lining; the reaction chamber is provided with a first inlet and outlet; The wafer carrier is arranged in the reaction chamber and is used to carry the wafer; the inner liner is arranged at the periphery of the wafer carrier and has a shielding ring bearing surface higher than the wafer; a transfer avoidance structure is arranged at the top of the inner liner corresponding to the first inlet and outlet, and the transfer avoidance structure has a transfer avoidance space for accommodating a transfer robot and allowing the transfer robot to move; A cooling chamber, located beside the reaction chamber, comprises a cooling cavity, at least one wafer carrier, and at least one first shielding ring carrier, wherein the cooling cavity is provided with a second inlet and outlet; the at least one wafer carrier is arranged in the cooling cavity for carrying wafers; the at least one first shielding ring carrier is arranged in the cooling cavity for carrying shielding rings; A transfer device, comprising a driving unit and a transfer robot controlled by the driving unit, for transferring a wafer that has completed a reaction process in a reaction chamber from the reaction chamber to the cooling chamber and for transferring a shielding ring between the reaction chamber and the cooling chamber; When the shielding ring is loaded by the transfer robot, the transfer robot takes the shielding ring to be loaded from the first shielding ring carrying device of the cooling chamber and transfers the shielding ring to the reaction chamber; the shielding ring is sent into the reaction chamber through the first inlet and outlet of the reaction chamber and the shielding ring is placed directly above the wafer carried by the wafer carrier; Lowering the transfer robot so that the transfer robot falls into the transfer avoidance structure of the liner and the shielding ring falls onto the shielding ring bearing surface of the liner; lowering the transfer robot in the transfer avoidance structure by an avoidance gap so that the transfer robot is separated from the shielding ring; moving the transfer robot out of the transfer avoidance structure through the first inlet and outlet; And, when the transfer robot is used to unload the shielding ring, the transfer robot is entered into the transfer avoidance structure through the first inlet and outlet of the reaction chamber and is placed directly below the shielding ring carried by the liner; the transfer robot in the transfer avoidance structure is raised by an avoidance gap, and during the rising process, the transfer robot supports the shielding ring and separates the shielding ring from the liner; the transfer robot and the shielding ring it carries are moved out through the first inlet and outlet of the reaction chamber and moved into the first shielding ring carrying device in the cooling chamber.

2. The wafer processing equipment according to claim 1, characterized in that: The transfer avoidance structure is a groove structure, the width of the groove structure is adapted to the transfer robot, and the height of the groove structure is greater than or equal to the avoidance gap.

3. The wafer processing equipment according to claim 1, characterized in that: A positioning pin is provided at the bottom of the shielding ring, a positioning hole corresponding to the positioning pin is provided on the shielding ring bearing surface of the liner, and a positioning hole corresponding to the positioning pin is provided on the first shielding ring bearing device; or, a positioning hole is provided at the bottom of the shielding ring, a positioning pin corresponding to the positioning hole is provided on the shielding ring bearing surface of the liner, and a positioning pin corresponding to the positioning pin is provided on the first shielding ring bearing device.

4. The wafer processing equipment according to claim 1, characterized in that: The transfer robot is provided with a wafer alignment structure corresponding to the wafer and a shielding ring alignment structure corresponding to the shielding ring.

5. A wafer processing method, characterized in that: Applied to the wafer processing equipment according to any one of claims 1 to 4, the wafer processing method comprises the following steps: Based on the shield ring loading instruction, the driving unit in the transfer device controls the transfer robot to take the shield ring to be loaded from the first shield ring carrying device in the cooling chamber and transfer the shield ring to the reaction chamber; the shield ring is sent into the reaction chamber through the first inlet and outlet of the reaction chamber and is located directly above the wafer carried by the wafer carrier; Lowering the transfer robot so that the transfer robot falls into the transfer avoidance structure and the shielding ring falls onto the shielding ring bearing surface of the liner; lowering the transfer robot in the transfer avoidance structure by an avoidance gap so that the transfer robot is separated from the shielding ring; moving the transfer robot out of the transfer avoidance structure through the first inlet and outlet; as well as, Based on the shielding ring unloading instruction, the driving unit in the transfer device controls the transfer robot to enter the transfer avoidance structure through the first inlet and outlet of the reaction chamber and be placed directly below the shielding ring carried by the liner; the transfer robot in the transfer avoidance structure is raised by an avoidance gap, and during the rising process, the transfer robot supports the shielding ring and separates the shielding ring from the liner; the transfer robot and the shielding ring it carries are moved out through the first inlet and outlet of the reaction chamber and moved onto the first shielding ring supporting device in the cooling chamber.

6. A wafer processing device, characterized in that: include: The reaction chamber comprises a reaction chamber, a wafer carrier, and an inner lining; the reaction chamber is provided with a first inlet and outlet; The wafer carrier is arranged in the reaction chamber and is used to carry the wafer; the inner liner is arranged at the periphery of the wafer carrier and has a shielding ring bearing surface higher than the wafer; a transfer avoidance structure is arranged at the top of the inner liner corresponding to the first inlet and outlet, and the transfer avoidance structure has a transfer avoidance space for accommodating a transfer robot and allowing the transfer robot to move; A shielding ring bearing chamber is located beside the reaction chamber, comprising a bearing cavity and at least one second shielding ring bearing device, wherein the bearing cavity is provided with a third material inlet and outlet; the at least one second shielding ring bearing device is arranged in the bearing cavity for bearing the shielding ring; A transfer device, comprising a driving unit and a transfer robot controlled by the driving unit, for transferring the shield ring between the reaction chamber and the shield ring carrying chamber; When the transfer robot is used to load the shield ring, the transfer robot takes the shield ring to be loaded from the second shield ring carrying device of the shield ring carrying chamber and transfers the shield ring to the reaction chamber; the shield ring is sent into the reaction chamber through the first inlet and outlet of the reaction chamber and the shield ring is placed directly above the wafer carried by the wafer carrier; Lowering the transfer robot so that the transfer robot falls into the transfer avoidance structure of the liner and the shielding ring falls onto the shielding ring bearing surface of the liner; lowering the transfer robot in the transfer avoidance structure by an avoidance gap so that the transfer robot is separated from the shielding ring; moving the transfer robot out of the transfer avoidance structure through the first inlet and outlet; And, when the transfer robot is used to unload the shielding ring, the transfer robot is entered into the transfer avoidance structure through the first inlet and outlet of the reaction chamber and is placed directly below the shielding ring carried by the liner; the transfer robot in the transfer avoidance structure is raised by an avoidance gap, and during the rising process, the transfer robot supports the shielding ring and separates the shielding ring from the liner; the transfer robot and the shielding ring it carries are moved out through the first inlet and outlet of the reaction chamber and moved into the second shielding ring carrying device in the shielding ring carrying chamber.

7. The wafer processing equipment according to claim 6, characterized in that: The transfer avoidance structure is a groove structure, the width of the groove structure is adapted to the transfer robot, and the height of the groove structure is greater than or equal to the avoidance gap.

8. The wafer processing equipment according to claim 6, characterized in that: A positioning pin is provided at the bottom of the shielding ring, a positioning hole corresponding to the positioning pin is provided on the shielding ring bearing surface of the liner, and a positioning hole corresponding to the positioning pin is provided on the second shielding ring bearing device; or, a positioning hole is provided at the bottom of the shielding ring, a positioning pin corresponding to the positioning hole is provided on the shielding ring bearing surface of the liner, and a positioning pin corresponding to the positioning pin is provided on the second shielding ring bearing device.

9. The wafer processing equipment according to claim 6, characterized in that: The transfer robot is provided with a shielding ring alignment structure corresponding to the shielding ring.

10. A wafer processing method, characterized in that: Applied to the wafer processing equipment according to any one of claims 6 to 9, the wafer processing method comprises the following steps: Based on the shield ring loading instruction, the driving unit in the transfer device controls the transfer robot to take the shield ring to be loaded from the second shield ring carrying device in the shield ring carrying chamber and transfer the shield ring to the reaction chamber; the shield ring is sent into the reaction chamber through the first inlet and outlet of the reaction chamber and is located directly above the wafer carried by the wafer carrier; Lowering the transfer robot so that the transfer robot falls into the transfer avoidance structure and the shielding ring falls onto the shielding ring bearing surface of the liner; lowering the transfer robot in the transfer avoidance structure by an avoidance gap so that the transfer robot is separated from the shielding ring; moving the transfer robot out of the transfer avoidance structure through the first inlet and outlet; as well as, Based on the shield ring unloading instruction, the driving unit in the transfer device controls the transfer robot to enter the transfer avoidance structure through the first inlet and outlet of the reaction chamber and be placed directly below the shield ring carried by the liner; the transfer robot in the transfer avoidance structure is raised by an avoidance gap, and during the rising process, the transfer robot supports the shield ring and separates the shield ring from the liner; the transfer robot and the shield ring it carries are moved out through the first inlet and outlet of the reaction chamber and moved into the second shield ring carrying device in the shield ring carrying chamber.

11. A reaction chamber, characterized in that: include: The reaction chamber has a containing space; the reaction chamber is provided with an inlet and outlet; A wafer carrier, disposed in the accommodating space, and used for carrying the wafer; An inner liner is arranged on the periphery of the wafer stage and the wafer carried by the wafer stage; the inner liner has a shielding ring bearing surface, and the shielding ring bearing surface is higher than the wafer carried by the wafer stage; a transfer avoidance structure corresponding to the transfer robot is arranged at the top of the inner liner corresponding to the inlet and outlet; When the shielding ring is loaded by the transfer robot, the transfer robot delivers the shielding ring to be loaded into the reaction chamber through the inlet and outlet and places it directly above the wafer; the transfer robot is lowered so that the transfer robot falls into the transfer avoidance structure and the shielding ring falls onto the shielding ring bearing surface of the liner; the transfer robot in the transfer avoidance structure is lowered by an avoidance gap so that the transfer robot is separated from the shielding ring; the transfer robot is removed from the transfer avoidance structure and, when using the transfer robot to unload the shielding ring, the transfer robot is introduced into the transfer avoidance structure through the first material inlet and outlet of the reaction chamber and is located directly below the shielding ring carried by the liner; the transfer robot in the transfer avoidance structure is raised by an avoidance gap, and during the rising process, the transfer robot supports the shielding ring and separates the shielding ring from the liner; the transfer robot and the shielding ring it carries are moved out through the material inlet and outlet of the reaction chamber.

12. The reaction chamber according to claim 11, characterized in that The transfer avoidance structure is a groove structure, the width of the groove structure is adapted to the transfer robot, and the height of the groove structure is greater than or equal to the avoidance gap.

13. The reaction chamber according to claim 11, characterized in that A positioning pin is provided at the bottom of the shielding ring, and a positioning hole corresponding to the positioning pin is provided on the shielding ring bearing surface of the liner; or a positioning hole is provided at the bottom of the shielding ring, and a positioning pin corresponding to the positioning hole is provided on the shielding ring bearing surface of the liner.

14. A controller, characterized in that: include: processor; a memory storing a computer program; Wherein, when the computer program is executed by the processor, the wafer processing method as claimed in claim 5 or 10 is executed.

15. A computer-readable storage medium, characterized in that: A computer program is stored, and when the computer program is executed, the wafer processing method according to claim 5 or 10 is executed.

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